TWI619189B - Substrate processing device - Google Patents

Abstract

The present invention provides a substrate processing apparatus which is advantageous in productivity improvement and reduction in installation area.

The substrate processing apparatus includes a processing unit that processes the first surface and the second surface of the substrate, a temperature adjustment unit that adjusts the temperature of the substrate, a driving unit that moves the temperature adjustment unit, and transports the substrate. The processing of the first surface of the substrate by the processing unit is performed in a first arrangement in which the substrate is disposed at a first position and the temperature adjustment unit is disposed on the substrate In the side of the second surface, the processing of the second surface of the substrate by the processing unit is performed in a second arrangement, wherein the substrate is disposed at the second position and the temperature adjustment unit In the side of the first surface of the substrate, in order to process the second surface in the second arrangement after the first surface is processed in the first arrangement, the transport unit removes the substrate from the substrate The first position is transported to the second position along the transport path, and when the transport unit transports the substrate from the first position to the second position, the drive unit causes the temperature adjustment unit to Send path temporarily retreat.

Description

Substrate processing device

The present invention relates to a substrate processing apparatus for processing a substrate.

There is a substrate processing apparatus that processes both of the two faces of the substrate. Patent Document 1 describes a film forming apparatus that forms a film on one surface W1a and the other surface W1b of a substrate W1. This film forming apparatus includes a first film forming portion E1, a second film forming portion E2, and a carrier rotating portion E3. When the first film F1 is formed on one surface W1a of the substrate W1 in the first film formation portion E1, the substrate W1 is taken out from the first film formation portion E1 and moved to the carrier rotation portion E3. In the carrier rotating portion E3, the carrier placing member 41 held by the substrate W1 is rotated by 180 degrees. The rotated substrate W1 is returned to the first film formation portion E1, and the first film F1 is formed on the other surface W1b of the substrate W1 in the first film formation portion E1. Then, the substrate W1 is moved to the second film forming portion E2 via the carrier rotating portion E3, and in the second film forming portion E2, the second film F2 is formed by overlapping the first film F1 on the other surface W1b of the substrate W1. Then, the substrate W1 is taken out from the second film forming portion E2 and moved to the carrier rotating portion E3, and in the carrier rotating portion E3, The carrier placing member 41 held by the plate W1 is rotated by 180 degrees. The rotated substrate W1 is returned to the second film formation portion E2, and the second film formation portion E2 is overlapped with the first film F1 on one surface W1a of the substrate W1 to form the second film F2.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Invention Patent Publication No. 2014-28999

In the film forming apparatus described in Patent Document 1, the substrate on which the first film forming portion E1 (or the second film forming portion E2) is formed on one surface W1a is formed from the first film forming portion E1 (or the second film forming portion). The film portion E2) is taken out and rotated, and then returned to the first film forming portion E1 (or the second film forming portion E2) to form a film on the other surface W1b of the substrate. Therefore, the increase in yield is hindered by the operation of the movement, rotation, movement, and the like of the substrate. Further, in the film forming apparatus described in Patent Document 1, when the first film F1 is formed by overlapping the first film F1 on the one surface W1a or the other surface W1b of the substrate W1, the first film forming portion is required. In E1 and the second film forming portion E2, the installation area of the film forming apparatus may be increased. Further, in the film forming apparatus described in Patent Document 1, one surface W1a and the other substrate W2 for one substrate W1 are simultaneously performed. In the case of forming a film of one surface W2a, two film forming portions E1 and E2 are used, and therefore, The installation area of the membrane device may become large.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a substrate processing apparatus which is advantageous in productivity improvement and reduction in installation area.

According to a first aspect of the invention, the substrate processing apparatus includes a processing unit that processes the first surface and the second surface of the substrate, and a temperature adjustment unit that adjusts a temperature of the substrate, and the temperature is adjusted. The driving unit that moves the adjustment unit and the transport unit that transports the substrate, and the processing of the first surface of the substrate by the processing unit is performed in a first arrangement in which the substrate is disposed in the first arrangement One position and the temperature adjustment unit are disposed on the side of the second surface of the substrate, and the processing of the second surface of the substrate by the processing unit is performed in a second arrangement, and the second arrangement is performed The substrate is disposed at the second position, and the temperature adjustment unit is disposed on the side of the first surface of the substrate, and the first surface is processed in the first arrangement, and the second surface is disposed in the second arrangement. In the second surface, the transfer unit transports the substrate from the first position to the second position along the transport path, and transports the substrate from the first position to the second position in the transport unit. , The driving section from the temperature adjusting unit is temporarily retracted the transport path.

According to a first aspect of the present invention, in a substrate processing apparatus, the substrate processing apparatus includes a processing unit that processes the first surface and the second surface of the substrate, and a temperature adjustment unit that adjusts a temperature of the substrate, The substrate includes a first substrate and a second substrate, and the processing of the first surface of the first substrate by the processing unit is performed in a first arrangement, and the first substrate is disposed in the first position The temperature adjustment unit is disposed on the side of the second surface of the first substrate, and the processing of the second surface of the first substrate by the processing unit and the processing of the first surface of the second substrate are performed. In the second arrangement, the first substrate is disposed at the second position, the second substrate is disposed at the first position, and the temperature adjustment unit is disposed on the first substrate and the second portion Between the substrates.

According to the present invention, there is provided a substrate processing apparatus which is advantageous in productivity improvement and reduction in installation area.

1‧‧‧Substrate processing unit

P‧‧‧Processing Department

P1‧‧‧1st Processing Department

P2‧‧‧2nd Processing Department

C1-C4‧‧‧ cathode

T11-T42‧‧‧ Sputtering target

TA‧‧‧Temperature Adjustment Department

DR‧‧‧Drive Department

CNV1‧‧‧Transport Department

CNV2‧‧‧Second Transport Department

100‧‧‧Loading room

200‧‧‧Processing room

300‧‧‧ Unloading room

SUB‧‧‧ substrate

S1‧‧‧ first side

S2‧‧‧2nd

M1‧‧‧1st push member

M2‧‧‧2nd push member

L1‧‧‧1st position

L2‧‧‧2nd position

SH‧‧‧ substrate carrier

Fig. 1 is a cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 3 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 4 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 5 is a view showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 6 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 7 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 8 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 9 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 10 is a view showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 11 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 12 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 13 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 14 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 15 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 16 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 17 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

FIG. 18 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 19 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 20 is a view schematically showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 21 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 22 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 23 is a view showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 24 is a diagram showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 25 is a view showing a continuous process of a plurality of substrates in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 26 is a cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, the present invention will be described by way of exemplary embodiments thereof with reference to the accompanying drawings.

1 and 2 are cross-sectional views showing the configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. Here, FIG. 1 is a cross-sectional view of the substrate processing apparatus 1 taken along a first plane, and FIG. 2 is a cross-sectional view of the substrate processing apparatus 1 taken along a second plane orthogonal to the first plane. Usually, the first plane is a horizontal plane, and the second plane is a vertical plane. The substrate processing apparatus 1 includes a processing unit P that processes the first surface S1 and the second surface S2 of the substrate SUB, a temperature adjustment unit TA that adjusts the temperature of the substrate SUB, and a driving unit DR that moves the temperature adjustment unit TA. And a transport unit CNV1 for transporting the substrate SUB. Further, in the example shown in Figs. 1 and 2, the first plane refers to a plane parallel to the XY plane, and the second plane refers to a plane parallel to the XZ plane in the example shown in Figs.

The substrate processing apparatus 1 can be configured such that after the first surface S1 of the substrate SUB is processed by the processing unit P, the second surface S2 of the substrate SUB is processed by the processing unit P. Further, the substrate processing apparatus 1 is preferably configured such that the first surface S1 of the first substrate SUB1 is processed by the processing unit P, and the second surface S2 of the first substrate SUB1 and the first surface S1 of the second substrate SUB2 are simultaneously Being processed. Here, the first substrate SUB1, the second substrate SUB2, and the like are expressions used to distinguish the mutually different substrates SUB from each other.

The processing unit P may include a first processing unit P1 in which the first surface S1 of the achievement substrate SUB (SUB1, SUB2, . . . ) is disposed, and a second processing unit SUB (SUB1, SUB2, . . . ) The second processing unit P2 that is processed in the surface S2. First processing unit P1 and second processing unit P2 is configured in a mutually opposite manner. When the substrate processing apparatus 1 is configured as a sputtering apparatus, the first processing unit P1 may include one or a plurality of cathodes C1 and C2, and the second processing unit P2 may include one or a plurality of cathodes C3 and C4. The cathode C1 is supplied with a potential, for example, while maintaining one or a plurality of sputtering targets T11 and T12. The cathode C2 is supplied with a potential, for example, by holding one or a plurality of sputtering targets T21 and T22. The cathode C3 is supplied with a potential, for example, by holding one or a plurality of sputtering targets T31 and T32. The cathode C4 is supplied with a potential, for example, by holding one or a plurality of sputtering targets T41 and T42.

When the first processing unit P1 is composed of one cathode C1 or C2, and the second processing unit P2 is composed of one cathode C3 or C4, the cathode C1 or C2 and the cathode C3 or C4 may be configured to be Moves in a direction parallel to the direction of the X-axis of Fig. 1 . Alternatively, when the first processing unit P1 is composed of one cathode C1 or C2 and the second processing unit P2 is composed of one cathode C3 or C4, the substrate SUB may be configured to pass through a moving mechanism (not shown). Moves in a direction parallel to the direction of the X-axis of Fig. 1.

The processing of the first surface S1 of the substrate SUB by the processing unit P (first processing unit P1) can be performed in the first arrangement, and the first arrangement SUB substrate is placed in the first position L1, and the temperature adjustment unit TA is disposed on the side of the second surface S2 of the substrate SUB. In the first arrangement, the temperature adjustment unit TA adjusts the temperature of the substrate SUB in a state of being in contact with the second surface S2 of the substrate SUB or in a state of being opposed to the second surface S2 of the substrate SUB. The processing of the second surface S2 of the substrate SUB by the processing unit P (second processing unit P2) can be performed in the second arrangement. The second arrangement SUB substrate is placed at the second position L2, and the temperature adjustment unit TA is disposed on the side of the first surface S1 of the substrate SUB. In the second arrangement, the temperature adjustment unit TA adjusts the temperature of the substrate SUB in a state of being in contact with the first surface S1 of the substrate SUB or in a state of being opposed to the first surface S1 of the substrate SUB.

Here, the adjustment of the temperature of the substrate SUB may be, for example, any of the following: maintaining the temperature of the substrate SUB within a predetermined temperature range; maintaining the temperature of the substrate SUB below the upper limit temperature; and the substrate SUB The temperature is maintained above the lower limit temperature; the substrate SUB is cooled; and the substrate SUB is heated. In the case where the substrate processing apparatus 1 is configured as a plasma processing apparatus such as a sputtering apparatus, in general, the temperature adjustment unit TA may be configured as a cooling unit that cools the substrate SUB. In this case, the substrate SUB is, for example, a resin substrate or the like. The temperature adjustment unit TA may be configured as a heating unit that heats the substrate SUB. In this case, the substrate SUB may be, for example, a metal substrate, a germanium substrate, a glass substrate, or the like.

The temperature adjustment unit TA may include, for example, a temperature adjustment plate that is in contact with or opposed to the second surface S2 of the substrate SUB in the first arrangement and that is in contact with or opposed to the first surface S1 of the substrate SUB in the second arrangement. The temperature of the temperature adjustment plate can be controlled by heating equipment and/or cooling equipment.

In order to process the first surface S1 of the substrate SUB in the first arrangement, the second surface S2 of the substrate SUB is processed in the second arrangement, and the transport unit CNV1 follows the transport path from the first position L1 to the substrate SUB. In FIGS. 1 and 2, the transport path is transported to the second position along the Y axis) L2. When the transport unit CNV1 transports the substrate SUB from the first position L1 to the second position L2, the drive unit DR temporarily evacuates the temperature adjustment unit TA from the transport path of the substrate SUB of the transport unit CNV1. The configuration of the transport unit CNV1 is not particularly limited, but the transport unit CNV1 may be constituted by, for example, a rack and pinion, a linear motor, a telescopic cylinder, or the like.

The direction D1 of the transport path of the substrate SUB by the transport unit CNV1 may be in a direction (Y-axis direction) where the first surface S1 of the substrate SUB at the first position L1 intersects (for example, orthogonally). In an example, the direction D1 of the transport path of the substrate SUB by the transport unit CNV1 may be in a horizontal direction in a direction intersecting the first surface S1 of the substrate SUB at the first position L1. When the drive unit DR retracts the temperature adjustment unit TA and returns the retracted temperature adjustment unit TA to the original position, the direction D2 in which the temperature adjustment unit TA moves can be intersected with the transport path of the substrate SUB of the transport unit CNV1. Direction, for example, the vertical direction (Z-axis direction). The direction D2 is a configuration in the vertical direction, which is advantageous in reducing the installation area (occupied area) of the substrate processing apparatus 1.

When the first surface S1 of the first substrate SUB1 disposed at the first position L1 is processed by the processing unit P (first processing unit P1), the processing unit P simultaneously processes the second surface S2 and the second substrate of the first substrate SUB1. The first surface S1 of SUB2. The simultaneous processing of the second surface S2 of the first substrate SUB1 and the first surface S1 of the second substrate SUB2 is performed in a state in which the first substrate SUB1 is disposed at the second position L2, and the second substrate SUB2 is disposed. At the position L1, the temperature adjustment unit TA is disposed between the first substrate SUB1 and the second substrate SUB2.

The substrate processing apparatus 1 may further include: a first pressing member M1 that presses the substrate SUB disposed at the first position L1 to the temperature adjustment unit TA; and a substrate SUB disposed at the second position L2 to the temperature adjustment unit The second push member of the TA pushes the member M2. Here, the first pressing member M1 functions as a mask for processing a part of the first surface S1 of the substrate SUB, and the second pressing member M2 can be used as the substrate SUB. One of the second faces S2 functions as a mask for processing.

The substrate processing apparatus 1 can be configured such that the first surface S1 and the second surface S2 of the substrate SUB are processed by the processing unit P in the processing chamber 200. The substrate processing apparatus 1 may further include a loading chamber (load lock chamber) 100 and an unloading chamber (load lock chamber) 300 that are respectively connected to the processing chamber 200. The load chamber 100 has a first valve 110 and a second valve 120. The unloading chamber 300 has a third valve 310 and a fourth valve 320.

The first valve 110 is a valve that opens when the substrate SUB is carried into the loading chamber 100 from an external environment (for example, an atmospheric environment). The second valve 120 is a valve that opens when the substrate SUB is transferred from the loading chamber 100 to the processing chamber 200. The third valve 310 is a valve that opens when the substrate SUB is transferred from the processing chamber 200 to the unloading chamber 300. The fourth valve 320 is a valve that opens when the substrate SUB is carried out from the unloading chamber 300 to an external environment (for example, an atmospheric environment).

The substrate processing apparatus 1 may further include a second transport unit CNV2. The second transport unit CNV2 is to be processed in a direction (X-axis direction) parallel to the first surface S1 of the substrate SUB at the first position L1. The substrate SUB is transferred from the outside of the processing chamber 200 to the processing chamber 200. The second transport unit CNV2 transports the processed substrate SUB from the processing chamber 200 to the processing chamber 200 in a direction (X-axis direction) parallel to the first surface S1 of the substrate SUB at the first position L1. . The configuration of the second transport unit CNV2 is not particularly limited, but the second transport unit CNV2 may be configured by, for example, a rack, a pinion, or a linear motor.

The transport unit CNV1 and the second transport unit CNV2 can be configured to transport the substrate carrier SH holding the substrate SUB and transport the substrate SUB.

Hereinafter, the continuous processing of the plurality of substrates SUB in the substrate processing apparatus 1 will be exemplarily described with reference to FIGS. 3 to 25 . In addition, in FIGS. 3 to 25, in order to improve the visibility, the illustration of the conveyance unit CNV1 and the second conveyance unit CNV2 is omitted.

First, in the routine shown in FIG. 3, the pressure in the load chamber 100 is adjusted to be equal to the pressure in the external environment (for example, the atmospheric environment), and the first substrate SUB1 is carried into the load chamber 100 through the first valve 110. Then, the first valve 110 is closed, and the load chamber 100 is decompressed. Next, in the routine shown in FIG. 4, the first substrate SUB1 is transported from the loading chamber 100 to the processing chamber 200 through the second valve 120 by the second transport unit CNV2, and then the second valve 120 is closed.

Next, in the program shown in FIG. 5, the first substrate SUB1 is transported to the first position L1 along the transport path (the transport path along the direction D1) by the transport unit CNV1. Here, the first position L1 is used as the second surface S2 of the substrate SUB of the first substrate SUB1 or the like and temperature adjustment. The location where the TA contacts. Next, in the routine shown in FIG. 6, the first substrate SUB1 disposed at the first position L1 is pressed against the temperature adjustment unit TA by the pressing member M1. In this example, the first pressing member M1 functions as a mask for processing a part of the first surface S1 of the first substrate SUB1. In this state, the sputtering targets T11 and T21 are sputtered by the first processing unit P1, and the first film (for example, a NiCr film) is formed on the first surface S1 of the first substrate SUB1 by the sputtered particles.

Next, in the routine shown in FIG. 7, the cathodes C1 and C2 are rotated so that the sputtering targets T12 and T22 are disposed to face the first surface S1 of the first substrate SUB1. In this state, the sputtering target T12 and T22 are sputtered by the first processing unit P1, and the sputtered particles are formed on the first film S1 of the first substrate SUB1 (for example, a NiCr film). A second film (for example, a Cu film) is formed on the upper surface.

Next, in the routine shown in FIG. 8, the first pressing member M1 is isolated from the first substrate SUB1. Further, in the routine shown in FIG. 9, the pressure in the load chamber 100 is adjusted to be equal to the pressure of the external environment (for example, the atmospheric environment), and the second substrate SUB2 is carried into the load chamber 100 through the first valve 110. Then, the first valve 110 is closed, and the load chamber 100 is decompressed. Further, the cathodes C1 and C2 are rotated such that the sputtering targets T11 and T21 are disposed to face the first surface S1 of the first substrate SUB1.

Then, in the program shown in FIG. 10, the temperature adjustment unit TA is driven by the drive unit DR in a direction parallel to the direction D2, and is retracted from the transport path of the first substrate SUB1 of the transport unit CNV1. Next, in the program shown in FIG. 11, the first substrate SUB1 is transported by the CNV1 The transport path (the transport path along the direction D1) is transported from the first position L1 to the second position L2. Next, in the routine shown in FIG. 12, the temperature adjustment unit TA is driven by the drive unit DR in a direction parallel to the direction D2, and returns to the original position (that is, the position on the transport path of the transport unit CNV1).

Next, in the routine shown in FIG. 13, the second substrate SUB2 is transported from the loading chamber 100 to the processing chamber 200 through the second valve 120 by the second transport unit CNV2, and then the second valve 120 is closed. Next, in the program shown in FIG. 14, the second substrate SUB2 is transported to the first position L1 along the transport path (the transport path along the direction D1) by the transport unit CNV1. Further, in the above description, in the program shown in FIG. 12, the drive unit DR returns the temperature adjustment unit TA to the original position (that is, the position on the transport path of the transport unit CNV1), but it is also possible in FIG. In the program and the program of FIG. 13, the drive unit DR does not return the temperature adjustment unit TA to the original position (that is, the position on the transport path of the transport unit CNV1), but is in the program of FIG. The temperature adjustment unit TA is driven in a direction parallel to the direction D2, and returns to the original position (that is, the position on the transport path of the transport unit CNV1).

Next, in the routine shown in FIG. 15, the second substrate SUB2 disposed at the first position L1 is pressed by the first pressing member M1 to the temperature adjustment unit TA. In addition, the first substrate SUB1 disposed at the second position L2 is pressed by the second pressing member M2 to the temperature adjustment unit TA. In this example, the second pressing member M2 functions as a mask for processing a part of the second surface S2 of the first substrate SUB1. In the shape In the second surface S2 of the first substrate SUB1 and the first surface S1 of the second substrate SUB2, a first film (for example, a NiCr film) is formed by sputtering. Specifically, the sputtering target T31 and T41 are sputtered by the second processing unit P2, and a first film (for example, a NiCr film) is formed on the second surface S2 of the first substrate SUB1 by the sputtered particles. At the same time, the sputtering target T11 and T21 are sputtered by the first processing unit P1, and the first film (for example, a NiCr film) is formed on the first surface S1 of the second substrate SUB2 by the sputtered particles.

Next, in the routine shown in FIG. 16, the cathodes C3 and C4 are rotated such that the sputtering targets T32 and T42 are disposed to face the second surface S2 of the first substrate SUB1. Similarly, the cathodes C1 and C2 are rotated such that the sputtering targets T12 and T22 are disposed to face the first surface S1 of the second substrate SUB2. In this state, a second film (for example, a Cu film) is formed by sputtering on the first film S1 formed on the first surface SU2 of the first substrate SUB1 and the first surface S1 of the second substrate SUB2. Next, in the routine shown in FIG. 17, the second pressing member M2 is isolated from the first substrate SUB1, and the first pressing member M1 is isolated from the second substrate SUB2.

Next, in the routine shown in FIG. 18, the first substrate SUB1 is transported from the processing chamber 200 through the third valve 310 to the unloading chamber 300 by the second transport unit CNV2, and then the third valve 310 is closed. Then, in the program shown in FIG. 19, the temperature adjustment unit TA is driven by the drive unit DR in a direction parallel to the direction D2, and is retracted from the transport path of the first substrate SUB1 of the transport unit CNV1. In the procedure shown in FIG. 20, the pressure in the load chamber 100 is adjusted to the external environment (for example, the atmospheric environment). The pressure is equal, and the third substrate SUB3 is carried into the load chamber 100 through the first valve 110. Then, the first valve 110 is closed, and the load chamber 100 is decompressed.

Then, in the program shown in FIG. 21, the second substrate SUB2 is transported from the first position L1 to the second position L2 along the transport path (the transport path along the direction D1) by the transport unit CNV1. Next, in the routine shown in FIG. 22, the temperature adjustment unit TA is driven by the drive unit DR in a direction parallel to the direction D2, and returns to the original position (that is, the position on the transport path of the transport unit CNV1). Further, the pressure in the unloading chamber 300 is adjusted to be equal to the pressure of the external environment (for example, the atmospheric environment), and the first substrate SUB1 is carried out from the unloading chamber 300 through the fourth valve 320 to the external environment.

Next, in the routine shown in FIG. 23, the cathodes C3 and C4 are rotated so that the sputtering targets T31 and T41 are disposed to face the second surface S2 of the second substrate SUB2. Similarly, the cathodes C1 and C2 are rotated such that the sputtering targets T11 and T21 are disposed to face the temperature adjustment unit TA.

Next, in the routine shown in FIG. 24, the third substrate SUB3 is transported from the loading chamber 100 to the processing chamber 200 through the second valve 120 by the second transport unit CNV2, and then the second valve 120 is closed. Then, in the program shown in FIG. 25, the third substrate SUB3 is transported to the first position L1 along the transport path (the transport path along the direction D1) by the transport unit CNV1. In addition, the third substrate SUB3 disposed at the first position L1 is pressed by the first pressing member M1 to the temperature adjustment unit TA. Further, the second substrate SUB2 disposed at the second position L2 is adjusted to the temperature by the second pressing member M2. The whole TA is pushing.

In this state, the first surface S1 of the second substrate SUB2 and the first surface S1 of the third substrate SUB3 are simultaneously sputtered to form a first film (for example, a NiCr film). Specifically, the sputtering target T31 and T41 are sputtered by the second processing unit P2, and a first film (for example, a NiCr film) is formed on the second surface S2 of the second substrate SUB2 by the sputtered particles. In addition, at the same time, the sputtering target T11 and T21 are sputtered by the first processing unit P1, and the first film (for example, a NiCr film) is formed on the first surface S1 of the third substrate SUB3 by the sputtered particles. Further, the cathodes C3 and C4 are rotated such that the sputtering targets T32 and T42 are disposed to face the second surface S2 of the second substrate SUB2. Similarly, the cathodes C1 and C2 are rotated such that the sputtering targets T12 and T22 are disposed to face the first surface S1 of the third substrate SUB3. In this state, a second film (for example, a Cu film) is formed by sputtering on the first film S1 formed on the second surface S2 of the second substrate SUB2 and the first surface S1 of the third substrate SUB3.

By repeating the above processing, a plurality of substrates SUB are continuously processed. At this time, the first surface S1 of one substrate SUB and the second surface S2 of the other substrate SUB are simultaneously processed. Further, in the present embodiment, the two surfaces (the first surface and the second surface) of the substrate SUB can be processed without rotating the substrate SUB by 180 degrees. This can increase the yield. Further, in the present embodiment, the two substrates SUB disposed so as to sandwich the temperature control unit TA can be simultaneously processed in one processing chamber 200. Therefore, according to the present embodiment, the setting of the substrate processing apparatus can be reduced as compared with the configuration in which the two substrates are separated from each other. area.

In Fig. 26, a modification of the substrate processing apparatus 1 shown in Figs. 1 to 25 is shown. The substrate processing apparatus 1 shown in FIG. 26 has a common feature with the substrate processing apparatus 1 shown in FIG. 1 to FIG. 25 in that the temperature adjustment unit TA that has been evacuated when the drive unit DR retracts the temperature adjustment unit TA returns to the original In the position D2 in which the temperature adjustment unit TA is moved, the direction in which the transport path (direction D1) of the substrate SUB of the transport unit CNV1 intersects is crossed. However, the substrate processing apparatus 1 shown in FIG. 26 is different from the substrate processing apparatus 1 shown in FIGS. 1 to 25 in that the direction D2 (the second direction) is one direction D1 in the horizontal direction (first Direction) The other direction in the horizontal direction (X-axis direction). The configuration in which the direction D2 is in the horizontal direction is advantageous in reducing the height of the substrate processing apparatus 1.

In the direction D2, the temperature adjustment unit TA can be retracted to a position where the conveyance of the substrate SUB by the conveyance unit CNV1 is not hindered and returned to the original position. Further, the path through which the drive unit DR moves the temperature adjustment unit TA may not be a linear path, and may be a curved path such as an arc-shaped path. Alternatively, the path in which the drive unit DR moves the temperature adjustment unit TA may include two or more straight paths.

Claims (15)

A substrate processing apparatus comprising: a processing unit that processes a first surface and a second surface of the substrate; a temperature adjustment unit that adjusts a temperature of the substrate; and a driving unit that moves the temperature adjustment unit; and a transfer unit that transports the substrate; and the processing of the first surface of the substrate by the processing unit is performed in a first arrangement in which the substrate is placed at a first position and the temperature adjustment unit is Arranged on the side of the second surface of the substrate, the processing of the second surface of the substrate by the processing unit is performed in a second arrangement in which the substrate is placed in the second position And the temperature adjustment unit is disposed on the side of the first surface of the substrate, and the second surface is processed in the second arrangement after the first surface is processed in the first arrangement, and the temperature adjustment unit is disposed on the side of the first surface. The unit transports the substrate from the first position along the transport path to the second position, and when the transport unit transports the substrate from the first position to the second position, the drive unit causes the aforementioned Adjusting portion from the transport path is temporarily retracted. The substrate processing apparatus according to claim 1, wherein the substrate includes a first substrate and a second substrate, and the first surface of the first substrate disposed at the first position is preceded After the processing by the processing unit, the first substrate is placed at the second position, the second substrate is placed at the first position, and the temperature adjustment unit is disposed between the first substrate and the second substrate. In the state, the processing unit simultaneously processes the second surface of the first substrate and the first surface of the second substrate. In the substrate processing apparatus according to the first aspect of the invention, the direction of the transport path from the first position to the second position is a direction intersecting the first surface of the substrate at the first position. The substrate processing apparatus according to the third aspect of the invention, wherein the driving unit temporarily retracts the temperature adjustment unit from the transport path in a direction intersecting with a direction of the transport path. The substrate processing apparatus according to claim 4, wherein a direction of the transport path from the first position to the second position is a horizontal direction, and the drive unit temporarily retracts the temperature adjustment unit from the transport path. Vertical direction. The substrate processing apparatus according to claim 4, wherein a direction of the transport path from the first position to the second position is a first direction in a horizontal direction, and the drive unit transports the temperature adjustment unit from the The direction in which the path is temporarily retracted is in the second direction in the horizontal direction, and the second direction is a direction intersecting the first direction. The substrate processing apparatus of claim 1, further comprising: a first pressing member that presses the substrate disposed at the first position toward the temperature adjustment unit; and a second pressing member that presses the substrate disposed at the second position toward the temperature adjustment unit . The substrate processing apparatus according to the seventh aspect of the invention, wherein the first pressing member functions as a mask for processing a part of the first surface of the substrate, and the second pressing The member is intended to function as a mask for processing a part of the second surface of the substrate. The substrate processing apparatus according to the first aspect of the invention, wherein the processing of the substrate by the processing unit is performed in a chamber, and the substrate processing apparatus further includes a second transport unit, the second transport unit And transporting the substrate to be processed from outside the chamber to the chamber along a direction parallel to the first surface of the substrate at the first position, and along the first position The processed substrate is transported from the chamber to the outside of the chamber in a direction parallel to the first surface of the substrate. The substrate processing apparatus according to claim 1, wherein the processing unit includes a first processing unit disposed to process the first surface of the substrate, and a second surface disposed to process the substrate In the processing unit, the first processing unit and the second processing unit are disposed to face each other. The substrate processing apparatus of claim 1, wherein The processing unit forms a film on the substrate by sputtering. The substrate processing apparatus according to claim 1, wherein the temperature adjustment unit is configured to cool or heat the substrate. A substrate processing apparatus comprising: a processing unit that processes a first surface and a second surface of a substrate; and a temperature adjustment unit that adjusts a temperature of the substrate; wherein the substrate includes a first substrate and a second substrate The processing of the first surface of the first substrate by the processing unit is performed in a first arrangement in which the first substrate is disposed at a first position and the temperature adjustment unit is disposed The side of the second surface of the first substrate, the processing of the second surface of the first substrate by the processing unit, and the processing of the first surface of the second substrate are performed in the second arrangement. In the second arrangement, the first substrate is disposed at the second position, the second substrate is disposed at the first position, and the temperature adjustment unit is disposed between the first substrate and the second substrate. The substrate processing apparatus according to claim 13, wherein the processing unit includes a first processing unit configured to process the first surface of the substrate, and a second surface disposed to process the substrate In the processing unit, the first processing unit and the second processing unit are disposed to face each other. The substrate processing apparatus of claim 13, wherein The temperature adjustment unit is configured to cool or heat the substrate.