JP2014028999A - Film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film forming device that can be made small and that can form a film with a simple structure and at low costs.SOLUTION: A chamber 11 is provided with a pressure-resistant chamber body 11a capable of keeping the inside under an airtight state. Three regions, a first film forming section E1 having a first cathode 21, a second film forming section E2 having a second cathode 31, and a carrier rotation section E3 arranged between the first film forming section E1 and the second film forming section E2 are formed inside the chamber body 11a. The first film forming section E1, the second film forming section E2, and the carrier rotation section E3 are arranged in a single chamber body 11a without partitions such as a valve. The three regions E1-E3 are uniformly decompressed by a first vacuum pump 22 for decompressing the entire inside of the chamber 11.

Description

  The present invention relates to a film forming apparatus, and more particularly, to a structure of a charging / unloading chamber constituting the film forming apparatus.

For example, as a film forming apparatus for forming a functional film on a substrate (film formation target), a PVD (Physical Vapor Deposition) apparatus, a CVD (Chemical Vapor Deposition) apparatus, or the like can be given.
A film forming apparatus typified by such a PVD apparatus or a CVD apparatus is provided with a film forming chamber for forming a film on a substrate and a partition valve (opening / closing means) having airtightness between the film forming chamber. It has at least a charging / unloading chamber (loading / unloading chamber) to be connected.

For example, the preparation / removal chamber is prepared by, for example, loading a substrate from one side which is an atmospheric pressure environment, depressurizing the inside of the chamber, and then opening a partition valve formed on the other side communicating with the film formation chamber which is a reduced pressure environment, The substrate charged in the chamber is sent into the deposition chamber. In addition, the loading / unloading chamber takes out the substrate on which the functional film has been formed in the film forming chamber from the other side into the chamber under a reduced pressure environment, makes the chamber into an atmospheric pressure environment, and then forms the film from one side. Send out the finished board.
That is, the loading / unloading chamber takes in and out the substrate between the film forming chamber in which the inside is in a reduced pressure environment and the outside of the film forming apparatus in the atmospheric pressure environment while keeping the inside of the film forming chamber in a reduced pressure environment. It is a delivery chamber for.

  Conventionally, such a loading / unloading chamber is used in order to efficiently load and unload a plurality of substrates. For example, a carrier (vertical carrier) that holds one surface of a substrate in a vertical state is horizontally disposed. A transport mechanism for transporting along is provided (for example, see Patent Documents 1 and 2).

  In such a conventional loading / unloading chamber, after the substrate to be formed is loaded into the loading / unloading chamber, the pressure in the chamber of the loading / unloading chamber is reduced, and the substrate is moved to one side in the horizontal direction. Retreat from a position (conveyance position) connected to the film formation chamber. Then, the substrate on which the film has been formed is moved from the film formation chamber in a reduced pressure environment to the loading / unloading chamber, the substrate on which the film has been formed is moved to the other side in the horizontal direction, and the substrate on which film formation is to be performed is moved to the film formation chamber The substrate is moved to a continuous transfer position, and this substrate is introduced into the film formation chamber. Then, after the film-formed substrate is moved again to the transfer position, the chamber in the preparation / removal chamber is brought to an atmospheric pressure environment, and then the film-formed substrate is taken out.

International Publication No. 2010/116721 Re-issued WO2008-129983

  However, in the film forming apparatus provided with the loading / unloading chamber for moving the carrier holding the substrate vertically as described above between the transfer position connected to the film forming chamber and the retreat position along the horizontal direction, There was a problem that the size of the membrane device was increased. In particular, when a multilayer film is obtained by stacking a plurality of functional films on both surfaces of a substrate, it is necessary to arrange a large number of film forming chambers in a straight line. It was necessary to use a large-scale film forming apparatus such as a large number of vacuum pumps for decompressing the chambers individually.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a film forming apparatus that can be easily downsized and can be formed at a low cost with a simple configuration.

In order to solve the above problems, some aspects of the present invention provide the following film forming apparatus and film forming method.
That is, the film forming apparatus of the present invention includes at least a chamber for forming a film on a substrate, a loading / unloading chamber disposed through an opening / closing means so as to communicate with the chamber, and one surface of the substrate in a vertical direction. A film forming apparatus having a carrier for vertically holding the substrate along
The chamber is disposed between a first film forming unit having a first cathode, a second film forming unit having a second cathode, the first film forming unit and the second film forming unit, and the carrier And a carrier rotating section that rotates about an axis along the vertical direction, and the charging / unloading chamber includes a heating unit that heats the substrate.

  At least one of the first film forming unit and the carrier rotating unit and at least one of the second film forming unit and the carrier rotating unit are always in communication with each other.

  A second opening / closing means is provided between the first film forming unit and the carrier rotating unit and between the second film forming unit and the carrier rotating unit.

  A first vacuum pump that depressurizes the entire interior of the chamber and a second vacuum pump that depressurizes the entire interior of the preparation / removal chamber are provided.

  The first film forming unit and the second film forming unit are arranged in a straight line via the carrier rotating unit, and the charging / unloading chamber is provided in the first film forming unit and the second film forming unit. On the other hand, it is arranged at a right-angled position via the carrier rotating part.

The first film forming unit is provided with a first substrate electrode facing the first cathode, and the second film forming unit is provided with a second substrate electrode facing the second cathode,
At least the first film forming unit includes a shutter plate that is detachably disposed between the first cathode and the first substrate electrode.

  The first substrate electrode and the second substrate electrode include an electrostatic chuck that electrostatically attracts the substrate.

  The substrate may be a flexible film, and the carrier may include a frame that supports the film.

In the first film forming unit, a first target is arranged in contact with the first cathode, and in the second film forming unit, a second target is arranged in contact with the second cathode,
The first target is Ti or Ni—Cr alloy, and the second target is Cu.

The film forming method of the present invention includes at least a chamber for forming a film on a substrate, a charging / unloading chamber disposed through an opening / closing means so as to communicate with the chamber, and a surface of the substrate along a vertical direction. And a carrier for vertically holding the substrate, and the chamber includes a first film forming unit having a first cathode, a second film forming unit having a second cathode, the first film forming unit, and the A carrier rotating unit disposed between the second film forming units and configured to rotate the carrier about an axis along the vertical direction, and the charging / unloading chamber includes heating means for heating the substrate. A film forming method using a film forming apparatus comprising:
A step of inserting the substrate into the carrier rotating part from the charging / unloading chamber, a B step of moving the substrate from the carrier rotating part to the first film forming unit, and the substrate in the first film forming unit. C step of forming a first film on one surface, moving the substrate from the first film forming unit to the carrier rotating unit, inverting the substrate by 180 degrees, and then again the first film forming unit D step of moving the substrate to E, E step of forming a first film on the other surface of the substrate in the first film forming unit, and the carrier rotating unit from the first film forming unit through the carrier rotating unit. F step of moving the substrate to a second film forming unit and forming a second film on the first film formed on the other surface of the substrate in the second film forming unit; Move the substrate from the deposition unit to the carrier rotation unit, and turn the substrate 180 degrees Then, the second film is formed on the first film formed on one surface of the substrate in the second film forming unit, and the G process for moving the substrate to the second film forming unit again. The H process is provided at least.

  The process further comprises an I process for etching one surface of the substrate between the B process and the C process, and a J process for etching the other surface of the substrate between the D process and the E process. It is characterized by.

  According to the film forming apparatus of the present invention and the film forming method of the present invention using this film forming apparatus, a plurality of film forming sections (film forming regions) are arranged in one (single) chamber, By arranging a carrier rotating unit for rotating the carrier holding the substrate between the film forming unit and the loading / unloading chamber, a space-saving film forming apparatus can be realized.

  In addition, by providing a plurality of film forming portions (film forming regions) in one chamber, it is possible to collectively depressurize each film forming region of a plurality of coatings with a single vacuum pump, thereby reducing the cost of the multilayer It is also possible to provide a film forming apparatus corresponding to film formation.

It is a schematic block diagram which shows the outline | summary of the film-forming apparatus of this invention. It is a principal part enlarged plan view which shows a carrier rotation part. It is the perspective view and sectional drawing which show a carrier. It is a principal part expanded sectional view which shows a conveyance roller. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a top view which shows the film-forming method using the film-forming apparatus of this invention in steps. It is a schematic block diagram which shows other embodiment of the film-forming apparatus of this invention.

  Hereinafter, an embodiment of a film forming apparatus and a film forming method according to the present invention will be described with reference to the drawings. The present embodiment is specifically described for better understanding of the gist of the invention, and does not limit the invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there is a case where a main part is shown in an enlarged manner for the sake of convenience. Not necessarily.

FIG. 1 is a schematic configuration diagram showing an entire inter-back PVD apparatus (hereinafter simply referred to as a film forming apparatus) showing an embodiment of the film forming apparatus of the present invention.
The film forming apparatus 10 according to the present embodiment includes a chamber 11 and a loading / unloading chamber (load / unload chamber) 12. Further, a carrier 13 is provided that can move while holding the substrate W inside the chamber 11 and the loading / unloading chamber 12.

  The chamber 11 includes a pressure-resistant chamber body 11a capable of keeping the inside airtight. The chamber body 11a includes a first film forming unit E1 having a first cathode 21, a second film forming unit E2 having a second cathode 31, and the first film forming unit E1 and the second film forming unit E2. Three regions of a carrier rotating part E3 are formed which are arranged between them and rotate the carrier 13 around an axis along the vertical direction. The first film forming part E1 and the second film forming part E2 are arranged on a straight line via the carrier rotating part E3. The first film forming unit E1, the second film forming unit E2, and the carrier rotating unit E3 are arranged without providing a partition such as a valve in the single chamber body 11a, and the entire inside of the chamber 11 is decompressed. These three regions E1 to E3 are uniformly decompressed by the first vacuum pump 22.

  A first substrate electrode 23 is formed facing the first cathode 21 in the first film forming portion E1. The first substrate electrode 23 is connected to the RF power source 29. Further, the first substrate electrode 23 extends along the horizontal direction between a contact position where one surface of the first substrate electrode 23 is in contact with the substrate W held by the carrier 13 and a retreat position where one surface is separated from the substrate W. A substrate electrode moving mechanism 28 for moving the substrate is formed. The first substrate electrode 23 is formed with an electrostatic chuck that brings the substrate W into close contact with the first substrate electrode 23 at a contact position in contact with the substrate W.

The first target 24 is disposed in contact with the first cathode 21 in the first film forming unit E1. The first target 24 is made of, for example, Ti or Ni—Cr alloy, and a first film made of the constituent components of the first target 24 is formed on the substrate W.
The first cathode 21 is formed so as to be rotatable to a position where the first target 24 can be exposed. As a result, when the first target 24 is replaced, the first target 24 can be easily replaced by simply rotating the first cathode 21.

  A deposition preventing plate 25 is formed on the first film forming portion E1 so as to cover the first cathode 21, the first substrate electrode 23, and the first target 24. The deposition plate 25 includes a film forming position that surrounds the first cathode 21, the first substrate electrode 23, and the first target 24 including the carrier 13, and an open position in which the carrier can be inserted and removed from the first film forming unit E1. It is formed so that it can be divided between.

  Further, a shutter plate 26 is disposed in the first film forming portion E1 so as to be detachable between the first cathode 21 and the first substrate electrode 23. The shutter plate 26 conceals the substrate W held by the carrier 13 from the first cathode 21, that is, the concealment position inserted in the first film forming unit E1 and the first film forming unit E1 exit. The retractable portion 27 is formed so as to be movable between the retracted positions.

  When a voltage is applied to the first substrate electrode 23 with such a shutter plate 26 in the concealing position, one surface side of the substrate W is etched. In addition, when a voltage is applied to the first cathode 21 with the shutter plate 26 in the retracted position, the first target 24 is sputtered and the first coating made of the components of the first target 24 is formed on one surface of the substrate W. Is deposited. A voltage may also be applied to the first substrate electrode 23 with the shutter plate 26 in the retracted position.

  A second substrate electrode 33 is formed facing the second cathode 31 in the second film forming portion E2. Further, the second substrate electrode 33 is arranged along the horizontal direction between a contact position where one surface of the second substrate electrode 33 is in contact with the substrate W held by the carrier 13 and a retreat position where one surface is separated from the substrate W. A substrate electrode moving mechanism 38 for moving the substrate is formed. The second substrate electrode 33 is formed with an electrostatic chuck that brings the substrate W into close contact with the second substrate electrode 33 at a contact position in contact with the substrate W. In addition, the 2nd board | substrate electrode 33 may be connected to RF power supply as needed.

A second target 34 is disposed in contact with the second cathode 31 in the second film forming unit E2. The second target 34 is made of, for example, Cu, and a second film made of the components of the second target 34 is formed on the substrate W.
The second cathode 31 is formed so as to be rotatable to a position where the second target 34 can be exposed. As a result, when the second target 34 is replaced, the second target 34 can be easily replaced only by rotating the second cathode 31.

  An adhesion preventing plate 35 is formed on the second film forming portion E2 so as to cover the first cathode 31, the first substrate electrode 33, and the first target 34. The deposition preventing plate 35 includes a film forming position that surrounds the second cathode 31 including the carrier 13, the second substrate electrode 33, and the first target 34, and an open position where the carrier can be inserted and removed from the second film forming unit E2. It is formed so that it can be divided between.

  By applying a voltage to the second cathode 31 and the second substrate electrode 33, the second target 34 is sputtered, and a second film composed of components of the second target 34 is formed on one surface of the substrate W.

  The carrier rotating unit E3 includes a carrier mounting member 41 on which the carrier 13 can be mounted, and a rotation shaft 42 that is fixed to the carrier mounting member 41 and rotates the carrier mounting member 41 by 270 ° along a horizontal plane. I have. The rotating shaft 42 is connected to, for example, a motor (not shown). With such a configuration, the carrier 13 placed on the carrier placement member 41 can be rotated around the axis of the rotation shaft 42. The rotation shaft 42 may be configured to rotate the carrier placement member 41 along the horizontal plane, that is, 360 °, and the rotation range is not limited.

  The carrier rotating part E3 has a first stop position S1 in which the carrier can be inserted and removed with respect to the first film forming part E1 and the second film forming part E2 of the chamber 11, as shown in FIG. Two stop positions, such as a second stop position S2 in which the carrier can be inserted and removed, are set as shown in 2 (b). The carrier mounting member 41 rotates, for example, clockwise, and is displaced between the two stop positions of the first stop position (FIG. 2A) and the second stop position (FIG. 2B). To do.

  By such a carrier rotating part E3, the carrier 13 holding the substrate W is inserted, for example, from the loading / unloading chamber 12 toward the first film forming part E1 of the chamber 11, or the first film forming part E1 and the second film forming part E1. The substrate W formed by the film forming unit E2 is inverted and inserted again into the first film forming unit E1 or the second film forming unit E2, or from the first film forming unit E1 toward the second film forming unit E2. Operations such as movement can be performed.

  The preparation / removal chamber 12 is disposed at a position perpendicular to the first film forming unit E1 and the second film forming unit E2 constituting the chamber 11 via the carrier rotating unit E3. A partition valve (opening / closing means) 51 that allows the carrier 13 on which the substrate W is mounted to pass between the preparation / removal chamber 12 and the chamber 11 and that hermetically separates the preparation / removal chamber 12 and the chamber 11 is provided. Is formed. Further, a partition valve (opening / closing means) 52 for airtightly partitioning the preparation / removal chamber 12 from the outside under atmospheric pressure is formed on the surface of the preparation / removal chamber 12 facing the partition valve 51.

  A second vacuum pump 53 is formed in the preparation / removal chamber 12 to depressurize the entire interior of the preparation / removal chamber 12. Further, a heater (heating means) 54 for heating the substrate W held on the carrier 13 to a predetermined temperature, for example, a film forming temperature, is formed inside the preparation / removal chamber 12. Inside such a charging / unloading chamber 12, a slide moving mechanism (not shown) that horizontally moves the carrier 13 between a position where the carrier 13 overlaps the partition valves 51, 52, a position where the carrier 13 approaches the heater, and the like. ) Is formed.

FIG. 3A is an external perspective view showing the carrier holding the substrate, and FIG. 3A is a cross-sectional view along the vertical direction.
As shown in FIG. 3, the carrier 13 includes a frame body 61 that vertically supports the substrate W so that one surface Wa of the substrate W is along the vertical direction, and a base 62 that supports the frame body 61. ing. As the substrate W, for example, a flexible film substrate (flexible substrate) is used. The film substrate is made of, for example, a heat resistant resin film. The frame body 61 includes an opening 61a that exposes one surface Wa and the other surface Wb of the substrate W, and supports the flexible substrate W such as a film substrate in a stretched manner without slack. At the time of film formation on the substrate W, the first substrate electrode 23 and the second substrate electrode 33 (see FIG. 1) enter from the opening 61a and adhere to the substrate W by an electrostatic chuck.

  A rack gear 63 is linearly formed on the bottom surface of the base 62 of the carrier 13. A large number of driving rollers 71 for moving the carrier 13 are arranged on the movement line of the carrier 13 of the film forming apparatus 10. The drive roller 71 includes a rotating shaft 72, a pinion gear 73 fixed to the rotating shaft 72, and a guide wheel 74. The rotating shaft 72 is connected to rotating means such as a motor 75.

  The pinion gear 73 meshes with the rack gear 63 of the carrier 13 and moves the carrier 13 by the rotation of the driving roller 71. The guide wheel 74 supports the base 62 of the carrier 13 from both sides. The carrier 13 can move inside the chamber 11 and the loading / unloading chamber 12 by such rack-pinion driving.

  In the film forming apparatus 10 of the present embodiment, between the first film forming unit E1 and the carrier rotating unit E3 disposed in the chamber 11, and between the second film forming unit E2 and the carrier rotating unit E3. In particular, there is no open / close means such as a partition valve, and it is always in communication.

  On the other hand, it is also preferable to provide a partition valve (second opening / closing means) that can open and close between the first film forming unit E1 and the carrier rotating unit E3 and between the second film forming unit E2 and the carrier rotating unit E3. . By providing a partition valve (second opening / closing means) between the first film forming unit E1 and the carrier rotating unit E3 or between the second film forming unit E2 and the carrier rotating unit E3, the first film forming unit E1 is provided. The second film forming unit E2 and the carrier rotating unit E3 can be independently depressurized at an arbitrary degree of vacuum, and film formation can be performed under more various conditions.

The film forming method of the present invention using the film forming apparatus according to the present invention having the above configuration will be described.
4-12 is the schematic which showed the film-forming method of this invention in steps. Note that a substrate (for example, a film) that is a film formation object actually moves in the film formation apparatus while being held by a carrier, but in these drawings, for the sake of clarity, the moving substrate is moved. Only showing. Further, in the following steps, the first coating F1 using the first target 34 and the second coating F2 using the second target 34 are overlapped on one surface Wa and the other surface Wb of the substrate W, respectively. An example of film formation will be described.

  First, after the inside of the charging / unloading chamber (load / unload chamber) 12 of the film forming apparatus 10 is brought to an atmospheric pressure state, the partition valve (opening / closing means) 52 is opened, and a film-forming object is placed in the charging / unloading chamber 12. A certain substrate W is introduced (see FIG. 4A). In the example of FIG. 4A, the substrate W <b> 1 on which film formation is performed first and the substrate W <b> 2 on which film formation is performed next are introduced into the preparation / extraction chamber 12.

  Next, the second vacuum pump 53 is driven to bring the inside of the preparation / removal chamber 12 into a vacuum state, and the substrate W1 is brought close to the heater (heating means) 54. And using the heater 54, the board | substrate W1 is heated to film-forming temperature, for example.

  When the heating of the substrate W1 is completed, the partition valve (opening / closing means) 51 is opened, and the heated substrate W1 is placed on the carrier placement member 41 disposed in the carrier rotation part E3 of the chamber 11 (step A: FIG. 4). (See (b)). The carrier mounting member 41 is rotated in advance so as to be in a second stop position S2 (see FIG. 2B) where the carrier can be inserted into and removed from the preparation / removal chamber 12. The chamber 11 is always in a vacuum state by the first vacuum pump 22 (see FIG. 1) during film formation.

  Next, the carrier mounting member 41 on which the substrate W1 is mounted is rotated 90 degrees clockwise, for example, so that the carrier can be inserted into and removed from the first film forming unit E1 and the second film forming unit E2. The position is set to S1 (see FIG. 2A). And the board | substrate W1 is moved to the 1st film-forming part E1 from the carrier mounting member 41 (B process: refer Fig.5 (a)). Further, the shutter plate 26 is moved from the retracting portion 27 into the first film forming portion E1.

Next, the first substrate electrode 23 is moved by the substrate electrode moving mechanism 28 toward the other surface W1b of the substrate W1 introduced into the first film forming unit E1. Then, the substrate W <b> 1 and the first substrate electrode 23 are brought into close contact with each other by the electrostatic chuck of the first substrate electrode 23.
Next, an RF voltage is applied to the first substrate electrode 23 with the shutter plate 26 introduced between the substrate W1 and the first cathode 21, and the one surface W1a side of the substrate W1 is etched (step I: (Refer FIG.5 (b)). Thereby, the adhesion between the surface W1a of the substrate W1 and the coating can be enhanced during film formation in a later step.

When the etching on the one surface W1a side of the substrate W1 is completed, the shutter plate 26 is retracted from the first film forming portion E1 to the retracting portion 27. Thereby, one surface W1a of the substrate W1 is exposed to the first target 24.
Then, by applying a predetermined voltage to the first cathode 21, a constituent component of the first target 24, for example, Ti is sputtered and deposited as a first coating F1 on one surface W1a of the substrate W1 (step C: FIG. 6 (a)).

  When the film formation of the first coating F1 is completed on the one surface W1a side of the substrate W1, the first substrate electrode 23 is retracted from the contact position of the substrate W1, and then the substrate W1 is moved to the carrier rotating unit E3. Further, the shutter plate 26 is moved from the retracting portion 27 into the first film forming portion E1 (see FIG. 6B).

Next, the carrier mounting member 41 on which the substrate W1 is mounted is rotated, for example, 180 degrees clockwise (see FIG. 7A). Thus, the substrate W1 is in a state where the one surface W1a and the other surface W1b are reversed.
Then, the substrate W1 is moved again from the carrier mounting member 41 to the first film forming unit E1 (D process). Further, the first substrate electrode 23 is moved by the substrate electrode moving mechanism 28 toward the one surface W1a of the substrate W1 introduced into the first film forming unit E1, and the one surface W1a of the substrate W1 is moved by the electrostatic chuck of the first substrate electrode 23. The first coating film F1 formed on the first substrate electrode 23 and the first substrate electrode 23 are brought into close contact with each other.

  Then, an RF voltage is applied to the first substrate electrode 23 with the shutter plate 26 introduced between the substrate W1 and the first cathode 21, and the other surface W1b side of the substrate W1 is etched (J process: (Refer FIG.7 (b)). Thereby, the adhesion between the other surface W1b of the substrate W1 and the coating can be enhanced during film formation in a later step.

When the etching on the other surface W1b side of the substrate W1 is completed, the shutter plate 26 is retracted from the first film forming portion E1 to the retracting portion 27. Accordingly, the other surface W1b of the substrate W1 is exposed to the first target 24.
Then, by applying a predetermined voltage to the first cathode 21, a constituent component of the first target 24, for example, Ti is sputtered and deposited as the first coating F1 on the other surface W1b of the substrate W1 (E step: (See FIG. 8 (a)).

When the film formation of the first coating F1 is completed on the other surface W1b side of the substrate W1, the first substrate electrode 23 is retracted from the contact position of the substrate W1. Then, the substrate W1 having the first coating F1 formed on both surfaces is passed through (passed through) the carrier mounting member 41 located at the first stop position S1 (see FIG. 2A). It introduce | transduces into E2 (refer FIG.8 (b)).
On the other hand, in the preparation / removal chamber 12, the substrate W2 on which film formation is performed next is brought close to the heater 54 and heated to the film formation temperature. In addition, after the substrate W1 is introduced into the second film forming portion E2, the carrier placement member 41 is rotated 90 degrees clockwise to be set at the second stop position S2.

  When the heating of the substrate W2 is completed, the partition valve (opening / closing means) 51 is opened, and the heated substrate W2 is placed on the carrier placement member 41 of the carrier rotating portion E3 (see FIG. 9A). Further, the substrate W1 introduced into the second film forming unit E2 is in a state where the other surface W1b side faces the second cathode 31. Then, the second substrate electrode 33 is moved by the substrate electrode moving mechanism 38 toward the one surface W1a of the substrate W1, and the first film F1 formed on the one surface W1a of the substrate W1 by the electrostatic chuck of the second substrate electrode 33. And the second substrate electrode 33 are brought into close contact with each other.

  Next, by applying a predetermined voltage to the second cathode 31, a component of the second target 34, for example, Cu is sputtered and applied to the first coating F1 formed on the other surface W1b of the substrate W1. Overlap and deposit as a second film F2 (F process: see FIG. 9B).

  On the other hand, after the carrier mounting member 41 on which the substrate W2 is mounted is rotated 90 degrees clockwise, for example, to the first stop position S1, the substrate W2 is moved from the carrier mounting member 41 to the first film forming unit E1. (See FIG. 9B). Further, the shutter plate 26 is moved from the retracting portion 27 into the first film forming portion E1. In addition, after the preparation / removal chamber 12 is brought to the atmospheric pressure environment, the partition valve 52 is opened, and the substrate W3 on which film formation is performed third is introduced into the preparation / removal chamber 12.

  Next, an RF voltage is applied to the first substrate electrode 23 in a state where the shutter plate 26 is introduced between the substrate W2 and the first cathode 21, and the one surface W1a side of the substrate W1 is etched (FIG. 10 ( a)). On the other hand, when the film formation of the second coating F2 is completed on the other surface W1b side of the substrate W2, the second substrate electrode 33 is retracted from the contact position of the substrate W1, and then the substrate W1 is transferred to the carrier. Move to the rotating part E3.

  Then, the carrier placement member 41 on which the substrate W1 is placed is rotated 180 degrees clockwise, for example (see FIG. 10B). Thus, the substrate W1 is in a state where the one surface W1a and the other surface W1b are reversed again. Then, the substrate W1 is moved again from the carrier mounting member 41 to the second film forming unit E1 (G process). Thereby, the substrate W1 introduced into the second film forming unit E2 is in a state where the one surface W1a side faces the second cathode 31.

  On the other hand, when the etching on the one surface W2a side of the substrate W2 is completed, the shutter plate 26 is retracted from the first film forming portion E1 to the retracting portion 27. Then, by applying a predetermined voltage to the first cathode 21, a constituent component of the first target 24, for example, Ti is sputtered and deposited as a first film F1 on the one surface W2a of the substrate W2.

  Next, the second substrate electrode 33 is moved by the substrate electrode moving mechanism 38 toward the other surface W1b of the substrate W1 of the second film forming unit E2, and the other surface of the substrate W1 is moved by the electrostatic chuck of the second substrate electrode 33. The first film F1 formed on W1b and the second substrate electrode 33 are brought into close contact with each other. Then, by applying a predetermined voltage to the second cathode 31, a constituent component of the second target 34, for example, Cu is sputtered and superimposed on the first coating F 1 formed on the one surface W 1 a of the substrate W 1. Then, it is deposited as the second coating F2 (H process: see FIG. 11A).

  On the other hand, after the film formation of the first coating F1 on the one surface W2a side of the substrate W2 is completed, the first substrate electrode 23 is retracted from the contact position of the substrate W2, and then the substrate W2 is moved to the carrier rotating unit E3. Further, the shutter plate 26 is moved from the retracting portion 27 into the first film forming portion E1.

Next, the carrier mounting member 41 on which the substrate W2 is mounted is rotated, for example, 180 degrees clockwise (see FIG. 11B), and the one surface W2a and the other surface W2b of the substrate W2 are reversed. Then, after the substrate W2 is moved again from the carrier mounting member 41 to the first film forming portion E1, the first coating F1 formed on the one surface W2a of the substrate W2 by the electrostatic chuck of the first substrate electrode 23 and The first substrate electrode 23 is brought into close contact.
On the other hand, when the formation of the second coating F2 is completed on the first surface W1a side of the substrate W1 so as to overlap the first coating F1, the second substrate electrode 23 is retracted from the contact position of the substrate W1.

Then, the substrate W1 formed by stacking the first coating F1 and the second coating F2 on each of the one surface W1a and the other surface W1b is moved to the carrier rotating portion E3 (see FIG. 12A).
On the other hand, in the first film forming unit E1, an RF voltage is applied to the first substrate electrode 23 with the shutter plate 26 introduced between the substrate W2 and the first cathode 21, and the other surface W2b of the substrate W2 is applied. Etch side.

  When the etching on the other surface W2b side of the substrate W2 is completed, the shutter plate 26 is retracted from the first film forming unit E1 to the retracting unit 27, and the other surface W2b of the substrate W2 is exposed to the first target 24. Then, by applying a predetermined voltage to the first cathode 21, a component of the first target 24, for example, Ti is sputtered and deposited as the first coating F1 on the other surface W2b of the substrate W2 (FIG. 12 ( b)).

  On the other hand, the carrier mounting member 41 on which the substrate W2 on which film formation has been completed is rotated 90 degrees clockwise, for example, and becomes the second stop position S2. Then, the partition valve 51 is opened, and the substrate W2 is introduced into the preparation / removal chamber 12. Thereafter, after the inside of the preparation / removal chamber 12 is brought to an atmospheric pressure environment, the partition valve 52 is opened, and the substrate W2 is taken out. Through the above steps, the first coating F1 and the second coating F2 can be deposited on the one surface W1a and the other surface W1b of one substrate W1, respectively. Note that the second substrate W2 in the state of FIG. 12B and the third substrate W3 in the loading / unloading chamber 12 are also applied to one surface and the other surface in the same procedure as the substrate W1 thereafter. The first film and the second film can be formed.

  As described above, according to the film forming apparatus of the present invention and the film forming method of the present invention using this film forming apparatus, a plurality of film forming portions (film forming regions) are arranged in one chamber, By placing a carrier rotating unit that rotates the carrier holding the substrate between the film forming unit and the loading / unloading chamber, it is possible to realize a film forming apparatus with a compact and minimal configuration Become.

  In addition, when a plurality of film forming sections (film forming regions) are arranged in one chamber and communicated with each other, the film forming regions of the plurality of films are collectively collected by one vacuum pump. Thus, it is possible to provide a film formation apparatus that can reduce the pressure and that can be used for forming a multilayer film at low cost.

  FIG. 13 is a schematic configuration diagram showing another embodiment of the film forming apparatus of the present invention. A film forming apparatus 100 shown in FIG. 13 includes a chamber 101 and a preparation / removal chamber (load / unload chamber) 102. The chamber 101 includes a pressure-resistant chamber main body 101a capable of keeping the inside airtight. The inside of the chamber main body 101a includes a first film forming unit E1 having a first cathode 121 and a second cathode 131. Carrier rotation disposed between the second film forming unit E2, the third film forming unit E4 having the third cathode 141, and the first film forming unit E1, the second film forming unit E2, and the third film forming unit E4. Three regions of the portion E3 are formed.

  The first film forming unit E1, the second film forming unit E2, and the third film forming unit E4 are arranged in a substantially convex shape via the carrier rotating unit E3. The first film forming unit E1, the second film forming unit E2, the third film forming unit E4, and the carrier rotating unit E3 are arranged without providing a partition such as a valve in the single chamber body 101a. These four regions E1 to E4 are uniformly depressurized by the first vacuum pump 122 that depressurizes the entire interior of the 101.

A first substrate electrode 123 is formed in the first film forming portion E1 so as to face the first cathode 121. A first target 124 is disposed in contact with the first cathode 121. With the first target 124, a first film made of components of the first target 124 is formed on the substrate W.
A second substrate electrode 133 is formed in the second film forming portion E2 so as to face the second cathode 131. A second target 134 is disposed in contact with the second cathode 131. With the second target 134, a second film made of the constituent components of the second target 134 is formed on the substrate W.

  Furthermore, a third substrate electrode 143 is formed in the third film forming portion E3 so as to face the third cathode 141. A third target 144 is disposed in contact with the third cathode 141. With the third target 144, a third film made of the constituent components of the third target 144 is formed on the substrate W.

  As described above, by providing three or more film forming portions (film forming regions) inside the chamber 101, it is possible to form films having three or more kinds of different compositions on the substrate W. .

  DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus, 11 ... Chamber, 12 ... Charging / unloading chamber (load / unload chamber), 13 ... Carrier, E1 ... First film-forming part, E2 ... Second film-forming part, E3 ... Carrier rotating part.

Claims (11)

At least a chamber for forming a coating on the substrate, a loading / unloading chamber arranged through an opening / closing means so as to communicate with the chamber, and a carrier for vertically holding the substrate so that one surface of the substrate is along a vertical direction A film forming apparatus comprising:
The chamber is disposed between a first film forming unit having a first cathode, a second film forming unit having a second cathode, the first film forming unit and the second film forming unit, and the carrier A carrier rotating part that rotates around an axis along the vertical direction,
The film forming apparatus, wherein the preparation / extraction chamber has a heating means for heating the substrate.   2. At least one of the first film forming unit and the carrier rotating unit and at least one of the second film forming unit and the carrier rotating unit are always in communication. Film forming equipment.   The second opening / closing means is disposed between the first film forming unit and the carrier rotating unit, and between the second film forming unit and the carrier rotating unit. Deposition device.   The first vacuum pump for depressurizing the entire interior of the chamber and the second vacuum pump for depressurizing the entire interior of the charging / removing chamber are provided, respectively. Deposition device.   The first film forming unit and the second film forming unit are arranged in a straight line via the carrier rotating unit, and the charging / unloading chamber is provided in the first film forming unit and the second film forming unit. 5. The film forming apparatus according to claim 1, wherein the film forming apparatus is disposed at a right angle via the carrier rotating portion. The first film forming unit is provided with a first substrate electrode facing the first cathode, and the second film forming unit is provided with a second substrate electrode facing the second cathode,
6. The shutter plate disposed at least in the first film forming section so as to be insertable / removable between the first cathode and the first substrate electrode. The film-forming apparatus of description.   The film forming apparatus according to claim 1, wherein the first substrate electrode and the second substrate electrode include an electrostatic chuck that electrostatically attracts the substrate.   The film forming apparatus according to claim 1, wherein the substrate is a flexible film, and the carrier includes a frame that stretches and supports the film. In the first film forming unit, a first target is arranged in contact with the first cathode, and in the second film forming unit, a second target is arranged in contact with the second cathode,
The film forming apparatus according to claim 1, wherein the first target is Ti or a Ni—Cr alloy, and the second target is Cu. At least a chamber for forming a coating on the substrate, a loading / unloading chamber arranged through an opening / closing means so as to communicate with the chamber, and a carrier for vertically holding the substrate so that one surface of the substrate is along a vertical direction And having
The chamber is disposed between a first film forming unit having a first cathode, a second film forming unit having a second cathode, the first film forming unit and the second film forming unit, and the carrier At least a carrier rotating section that rotates about an axis along the vertical direction, and the charging / unloading chamber is a film forming method using a film forming apparatus that includes a heating means for heating the substrate. And
A step of inserting the substrate into the carrier rotating part from the preparation / removal chamber;
B step of moving the substrate from the carrier rotating unit to the first film forming unit;
C step of forming a first film on one surface of the substrate in the first film forming unit;
D step of moving the substrate from the first film forming unit to the carrier rotating unit, inverting the substrate by 180 degrees, and then moving the substrate to the first film forming unit again;
An E step of forming a first film on the other surface of the substrate in the first film forming unit;
The substrate is moved from the first film forming unit to the second film forming unit via the carrier rotating unit, and is overlapped with the first film formed on the other surface of the substrate in the second film forming unit. An F step of forming a second film;
G step of moving the substrate from the second film forming unit to the carrier rotating unit, inverting the substrate by 180 degrees, and then moving the substrate to the second film forming unit again;
H step of forming a second film on the first film formed on one surface of the substrate in the second film forming unit;
A film forming method comprising at least:   The process further comprises an I process for etching one surface of the substrate between the B process and the C process, and a J process for etching the other surface of the substrate between the D process and the E process. The film forming method according to claim 10.

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