TWI618974B - Dust-proof frame structure for reticle - Google Patents
Dust-proof frame structure for reticle Download PDFInfo
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- TWI618974B TWI618974B TW105143457A TW105143457A TWI618974B TW I618974 B TWI618974 B TW I618974B TW 105143457 A TW105143457 A TW 105143457A TW 105143457 A TW105143457 A TW 105143457A TW I618974 B TWI618974 B TW I618974B
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Abstract
一種用於光罩的防塵框架結構,係透過有機膠黏固於一光罩的表面上,主要包含一框架本體,該框架本體係具有一個頂面、一個底面及四個外側壁面的結構,該框架本體頂面結合有一保護薄膜,以在框架本體形成一內腔,且該四個外側壁面處上係至少設置有一個含以上環繞狀的環狀內凹口,該環狀內凹口用以吸收由該頂面來的下壓壓力,以減少該底面受到的下壓壓力,以將光罩微變形由習知的2-3nm下降至1nm以下。 A dust-proof frame structure for a reticle is adhered to a surface of a reticle through an organic glue, and mainly comprises a frame body having a top surface, a bottom surface and four outer wall surface structures. The top surface of the frame body is combined with a protective film to form an inner cavity in the frame body, and the four outer wall surfaces are provided with at least one annular inner recess including the above surrounding shape, and the annular inner recess is used for The pressing pressure from the top surface is absorbed to reduce the pressing pressure applied to the bottom surface to reduce the micro-deformation of the mask from a conventional 2-3 nm to less than 1 nm.
Description
本發明係關於一種用於光罩的防塵框架結構,特別是指一種藉由一框架本體外壁之一環狀內凹口吸收施加於來自該框架本體頂面的壓力,以減少該框架本體底面受到的下壓壓力,將光罩微變形幅度降至1nm以下之用於光罩的防塵框架結構。 The present invention relates to a dust-proof frame structure for a reticle, in particular to an annular inner recess of a frame body absorbing a pressure applied from a top surface of the frame body to reduce the bottom surface of the frame body. The pressing pressure reduces the micro-deformation amplitude of the reticle to less than 1 nm for the dust-proof frame structure of the reticle.
習知微影技術係經由光罩來照射紫外光(依據不同的技術使用不同光源),讓電路圖案轉印到半導體晶圓或液晶用原板上。使用此微影技術之電路圖案的形成大多是被實施於無塵室內,然而即使是無塵室內,仍然還是會存有微細塵埃等之類的異物粒子。若有異物粒子附著於光罩,則會發生起因於該異物粒子之光的反射,遮蔽及散亂,將引發所形成電路圖案之形變,斷線及邊緣粗糙,或者會產生半導體晶圓等之底板污垢。於是,為了防止異物粒子附著於光罩,對光罩安裝了一已貼附一層保護薄膜之框架元件; 而上述框架元件1的使用,如第1A圖及第1B圖所示,當要結合與一光罩2表面21上後,由於是透過膠體31,32分別與該保護薄膜4及該光罩2表面21相黏接,而當要將該框體1壓於該光罩2表面21上時,如第1B圖所示,會造成該光罩2表面21有2-3nm的微變形(Pellicle induced distortion,PID),若是製程中要使用到雙重(double)或多重曝光(multi-patterning)時,將會因為光罩表面2-3nm的微 變形,而使得圖案會跑掉,故當要雙重或多重曝光時,將會因為圖案跑掉而無法對準,故會導致曝光的失敗; 另外,將框架元件1置於光罩2上,如此既能夠防止異物附著於光罩2上,又可通過將焦點對準光罩2上的圖案進行曝光,從而進行轉印而不會受到附著於保護薄膜4上的灰塵的影響。然而由於為了使框架元件1上所貼附的保護薄膜4能夠保持一定張力,因此會於框架元件1側邊開設通氣孔,藉由空氣流通使保護薄膜4不會因氣壓變化而下陷或鼓漲,但通氣孔的存在往往會導致灰塵等異物粒子進入,故目前的做法大多會於通氣孔表面貼上一過濾器,防止灰塵粒子進入光罩2與框架元件1所形成的內腔中。 Conventional lithography technology uses a reticle to illuminate ultraviolet light (using different light sources depending on different techniques) to transfer the circuit pattern to a semiconductor wafer or a liquid crystal panel. Most of the circuit patterns using this lithography technique are implemented in a clean room. However, even in a clean room, foreign matter such as fine dust remains. If foreign matter particles adhere to the mask, reflection, shielding, and scattering of light due to the foreign particles may occur, causing deformation of the formed circuit pattern, disconnection and edge roughness, or generation of a semiconductor wafer or the like. Floor dirt. Therefore, in order to prevent foreign matter particles from adhering to the reticle, a frame member to which a protective film has been attached is attached to the reticle; The use of the frame member 1 as shown in FIGS. 1A and 1B, after being bonded to the surface 21 of a reticle 2, is transmitted through the colloids 31, 32 and the protective film 4 and the reticle 2, respectively. The surface 21 is adhered, and when the frame 1 is to be pressed against the surface 21 of the reticle 2, as shown in FIG. 1B, the surface 21 of the reticle 2 is slightly deformed by 2-3 nm (Pellicle induced). Distortion, PID), if you want to use double or multi-patterning in the process, it will be 2-3nm due to the mask surface Deformation, so that the pattern will run away, so when double or multiple exposures are used, the pattern will run out and cannot be aligned, which will lead to failure of exposure; Further, the frame member 1 is placed on the reticle 2, so that foreign matter can be prevented from adhering to the reticle 2, and the lens can be transferred without being attached by exposing the pattern on the reticle 2 to the focus. The effect of dust on the protective film 4. However, in order to maintain a certain tension in the protective film 4 attached to the frame member 1, a vent hole is formed in the side of the frame member 1, and the protective film 4 does not sink or bulge due to the change in air pressure by air circulation. However, the presence of vent holes tends to cause foreign matter particles such as dust to enter. Therefore, most of the current methods put a filter on the surface of the vent hole to prevent dust particles from entering the inner cavity formed by the reticle 2 and the frame member 1.
而為了解決上述間題,若所使用的框架本體本身具有能夠分散壓力的結構,將能夠吸收下壓壓力,並減少該光罩表面所承受的下壓壓力,故藉由此結構的設計將能夠避免光罩表面的微變形,因此若是進行雙重或多重曝光時,將不會因為圖案跑掉而無法對準,故能夠避免曝光的失敗,如此應為一最佳解決方案。 In order to solve the above problems, if the frame body itself has a structure capable of dispersing pressure, it will be able to absorb the pressing pressure and reduce the pressing pressure on the surface of the reticle, so that the design of the structure can Avoid micro-deformation of the surface of the mask, so if double or multiple exposure is performed, it will not be aligned because the pattern runs away, so the failure of exposure can be avoided, which should be an optimal solution.
本發明即在於提供一種用於光罩的防塵框架結構,係為一種能夠阻擋異物粒子進入內腔中及避免因下壓壓力破壞的造成光罩表面的微變形之用於光罩的防塵框架結構。 The present invention provides a dust-proof frame structure for a reticle, which is a dust-proof frame structure for a reticle capable of blocking foreign matter particles from entering the inner cavity and avoiding micro-deformation of the reticle surface due to crushing pressure. .
一種用於光罩的防塵框架結構,係設置於一光罩表面上,係包含:一框架本體,係具有一個頂面、一個底面及四個外側壁面的結構,該頂面係結合有一保護薄膜,以形成一內腔,且該四個外側壁面處上係具有一環繞的環狀 內凹口,該環狀內凹口用以吸收由該頂面來的下壓壓力,以減少該底面的承受壓力。 A dust-proof frame structure for a reticle is disposed on a surface of a reticle, comprising: a frame body having a top surface, a bottom surface and four outer wall surfaces, the top surface being combined with a protective film , to form an inner cavity, and the four outer wall faces have a circumferential ring An inner recess for absorbing the downward pressure from the top surface to reduce the bearing pressure of the bottom surface.
於一較佳實施例中,其中該框架本體的外壁面上係設置一條或複數條的環狀內凹口。 In a preferred embodiment, one or more annular inner recesses are formed on the outer wall surface of the frame body.
於一較佳實施例中,其中該框架本體的壁面厚度範圍為1~2mm。 In a preferred embodiment, the wall thickness of the frame body ranges from 1 to 2 mm.
於一較佳實施例中,其中該環狀內凹口的深度範圍為0.5~1mm。 In a preferred embodiment, the annular inner recess has a depth ranging from 0.5 to 1 mm.
於一較佳實施例中,其中該環狀內凹口的高度範圍為0.5~3mm。 In a preferred embodiment, the annular inner recess has a height ranging from 0.5 to 3 mm.
於一較佳實施例中,其中該環狀內凹口的壁面高度範圍為1~2mm。 In a preferred embodiment, the annular inner recess has a wall height ranging from 1 to 2 mm.
於一較佳實施例中,其中該框架本體的頂面係與該保護薄膜透過一有機膠相黏接,該有機膠係能夠為丙烯酸有機聚合物(Acrylic polymer)或是矽有機聚合物(Silicon polymer)或環氧樹脂,而該有機膠的厚度0.02~0.05mm。 In a preferred embodiment, the top surface of the frame body is adhered to the protective film through an organic glue, and the organic glue can be an acrylic organic polymer or an organic polymer (Silicon). Polymer) or epoxy resin, and the thickness of the organic glue is 0.02~0.05mm.
於一較佳實施例中,其中該框架本體的底面係與該光罩表面透過一有機膠相黏接,該有機膠係能夠為丙烯酸有機聚合物(Acrylic polymer)或是矽有機聚合物(Silicon polymer)或熱熔膠(Hot melt adhesive)或苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(Styrene Ethylene Butylene Styrene,SEBS),而該有機膠的厚度0.1~0.8mm。 In a preferred embodiment, the bottom surface of the frame body is bonded to the surface of the mask through an organic glue, and the organic glue can be an acrylic organic polymer or an organic polymer (Silicon). Polymer) or hot melt adhesive or Styrene Ethylene Butylene Styrene (SEBS), and the organic rubber has a thickness of 0.1 to 0.8 mm.
1‧‧‧框架元件 1‧‧‧Frame components
2‧‧‧光罩 2‧‧‧Photomask
21‧‧‧表面 21‧‧‧ surface
31‧‧‧膠體 31‧‧‧ colloid
32‧‧‧膠體 32‧‧‧colloid
4‧‧‧保護薄膜 4‧‧‧Protective film
5‧‧‧框架本體 5‧‧‧Frame Ontology
51‧‧‧頂面 51‧‧‧ top surface
52‧‧‧底面 52‧‧‧ bottom
53‧‧‧外側壁面 53‧‧‧Outer side wall surface
531‧‧‧環狀內凹口 531‧‧‧ annular notch
54‧‧‧內腔 54‧‧‧ lumen
55‧‧‧有機膠 55‧‧‧Organic glue
56‧‧‧有機膠 56‧‧‧Organic glue
[第1A圖]係習用防塵框架結構之結構結合示意圖。 [Fig. 1A] is a schematic view showing the structure of a conventional dustproof frame structure.
[第1B圖]係習用防塵框架結構之結構結合示意圖。 [Fig. 1B] is a schematic view showing the structure of a conventional dustproof frame structure.
[第2A圖]係本發明用於光罩的防塵框架結構之立體結構示意圖。 [Fig. 2A] is a perspective view showing the structure of the dustproof frame structure for the photomask of the present invention.
[第2B圖]係本發明用於光罩的防塵框架結構之剖面結構示意圖。 [Fig. 2B] is a schematic cross-sectional view showing the structure of the dustproof frame for the photomask of the present invention.
[第3A圖]係本發明用於光罩的防塵框架結構之與光罩表面結合之剖面結構示意圖。 [Fig. 3A] is a schematic cross-sectional view showing the structure of the dust-proof frame structure of the reticle in combination with the surface of the reticle of the present invention.
[第3B圖]係本發明用於光罩的防塵框架結構之與光罩表面結合之剖面結構示意圖。 [Fig. 3B] is a schematic cross-sectional view showing the structure of the dust-proof frame structure of the reticle in combination with the surface of the reticle of the present invention.
[第4A圖]係本發明用於光罩的防塵框架結構之另一實施例正面示意圖。 [Fig. 4A] Fig. 4A is a front elevational view showing another embodiment of the dustproof frame structure for a photomask of the present invention.
[第4B圖]係本發明用於光罩的防塵框架結構之另一實施剖面結構示意圖。 [Fig. 4B] Fig. 4 is a schematic cross-sectional view showing another embodiment of the dustproof frame structure for a photomask of the present invention.
有關於本發明其他技術內容、特點與功效,在以下配合參考圖式之較佳實施例的詳細說明中,將可清楚的呈現。 Other details, features, and advantages of the present invention will be apparent from the following description of the preferred embodiments.
請參閱第2A及2B圖,為本發明用於光罩的防塵框架結構之立體結構示意圖及剖面結構示意圖,由圖中可知,該用於光罩的防塵框架結構係設置於一光罩2表面21上,主要是包含有一框架本體5,該框架本體5係具有一個頂面51、一個底面52及四個外側壁面53的結構,而該框架本體5的中央處係具有一穿透該頂面51及底面52,該頂面係結合有一保護薄膜4,以形成一內腔54;其中該四個外側壁面53處上係具有一環繞狀的環狀內凹口531,該環狀內凹口531用以吸收由該頂面51來的下壓壓力,以減少該底面52受到的下壓壓力;該框架本體5可視需求在其中一壁面上設置有一通氣孔512,該通氣孔512是連通到環狀內凹口531處,用以令該框架本體51之內腔54的氣壓和環境 氣壓保持平衡,而該通氣孔512上更設有一過濾器513用以防止污染物質或微粒侵入框架本體5中。 2A and 2B are schematic perspective views and cross-sectional structural views of a dustproof frame structure for a reticle according to the present invention. As can be seen from the figure, the dustproof frame structure for the reticle is disposed on the surface of a reticle 2. 21, mainly comprising a frame body 5 having a top surface 51, a bottom surface 52 and four outer wall surfaces 53, and the center of the frame body 5 has a top surface And a bottom surface 52, the top surface is combined with a protective film 4 to form an inner cavity 54; wherein the four outer side wall surfaces 53 have a circumferential annular inner recess 531, the annular inner recess The 531 is configured to absorb the pressing pressure from the top surface 51 to reduce the pressing pressure received by the bottom surface 52. The frame body 5 can be provided with a vent hole 512 on one of the wall surfaces as needed, and the vent hole 512 is connected to The annular inner recess 531 is for making the air pressure and environment of the inner cavity 54 of the frame body 51 The air pressure is balanced, and the vent 512 is further provided with a filter 513 for preventing intrusion of pollutants or particles into the frame body 5.
如第2B圖所示,該環狀內凹口53的尺寸會影響壓力散壓的效果,而本發明舉出最佳效果的結構尺寸,數據如下: As shown in Fig. 2B, the size of the annular inner recess 53 affects the effect of pressure dispersion, and the structural size of the present invention is as follows:
(1)B1:該框架本體的壁面厚度為1~2mm。 (1) B1: The wall thickness of the frame body is 1 to 2 mm.
(2)B2:該環狀內凹口531的深度範圍為0.5~1mm。 (2) B2: The annular inner recess 531 has a depth ranging from 0.5 to 1 mm.
(3)A1:該環狀內凹口531的高度範圍為0.5~3mm。 (3) A1: The height of the annular inner recess 531 ranges from 0.5 to 3 mm.
(4)A2:該環狀內凹口531至該頂面51之間的高度範圍為1~2mm。 (4) A2: The height between the annular inner recess 531 and the top surface 51 ranges from 1 to 2 mm.
(5)A3:該環狀內凹口531至該底面52之間的高度範圍為1~2mm。 (5) A3: The height between the annular inner recess 531 and the bottom surface 52 ranges from 1 to 2 mm.
如第3A圖及第3B圖所示,其中該頂面51與該保護薄膜4係透過一有機膠55相黏接,其中該有機膠係能夠為丙烯酸有機聚合物(Acrylic polymer)或是矽有機聚合物(Silicon polymer)及環氧樹脂,而該有機膠的厚度0.02~0.05mm;而該底面52與該光罩2表面21係透過一有機膠56相黏接,其中該有機膠係能夠為丙烯酸有機聚合物(Acrylic polymer)或是矽有機聚合物(Silicon polymer)或熱熔膠(Hot melt adhesive)或苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(Styrene Ethylene Butylene Styrene,SEBS),而該有機膠的厚度0.1~0.8mm;而當框架本體5要結合於光罩2的表面21時,主要是施加壓力於框架本體頂面51,使框架本體5的底面52可藉由有機膠56與光罩2的表面21相結合,但在結合過程中,由於該頂面51所承受的壓力會傳送至該環狀內凹口531與外壁面53所形成的空間,並將壓力由該環狀內凹口531向外釋放出去,如此傳達到底面52的壓力則會大幅度降低,因此,能夠將該光罩2表面21微變形的幅度下降至1nm以下。 As shown in FIG. 3A and FIG. 3B , the top surface 51 and the protective film 4 are adhered through an organic glue 55 , wherein the organic glue can be an acrylic organic polymer or an organic organic polymer. a polymer (Silicon polymer) and an epoxy resin, wherein the organic rubber has a thickness of 0.02 to 0.05 mm; and the bottom surface 52 and the surface 21 of the photomask 2 are adhered through an organic rubber 56, wherein the organic rubber can be Acrylic polymer or silicone polymer or hot melt adhesive or Styrene Ethylene Butylene Styrene (SEBS) The organic rubber has a thickness of 0.1 to 0.8 mm; and when the frame body 5 is to be bonded to the surface 21 of the reticle 2, the pressure is applied mainly to the top surface 51 of the frame body, so that the bottom surface 52 of the frame body 5 can be organically The glue 56 is combined with the surface 21 of the reticle 2, but during the bonding process, the pressure applied by the top surface 51 is transmitted to the space formed by the annular inner recess 531 and the outer wall surface 53, and the pressure is The annular inner recess 531 is released outward, and is transmitted to the bottom surface. The pressure of 52 is greatly reduced, so that the amplitude of the micro-deformation of the surface 21 of the mask 2 can be reduced to 1 nm or less.
請參閱第4A圖及第4B圖所示,係本發明之另一實施示意圖,其中該環狀內凹口531可設置複數條,其餘結構皆與上述說明相同,於此不在贅述。而多條之環狀內凹口的尺寸如下: Please refer to FIG. 4A and FIG. 4B , which are schematic diagrams of another embodiment of the present invention, wherein the annular inner recess 531 can be provided with a plurality of strips, and the rest of the structures are the same as those described above, and are not described herein. The dimensions of the plurality of annular inner recesses are as follows:
(1)B1:該框架本體的壁面厚度為1~2mm。 (1) B1: The wall thickness of the frame body is 1 to 2 mm.
(2)B2:該環狀內凹口531的深度範圍為0.5~1mm。 (2) B2: The annular inner recess 531 has a depth ranging from 0.5 to 1 mm.
(3)C1、C2、C3:該環狀內凹口531的壁面高度範圍為1~2mm。 (3) C1, C2, C3: The wall surface height of the annular inner recess 531 is in the range of 1 to 2 mm.
(4)C5、C6、C7:該環狀內凹口531的高度範圍為0.5mm。 (4) C5, C6, C7: The height of the annular inner recess 531 is 0.5 mm.
上述形成環狀內凹口531的壁面亦可設置成不連續性,如第4A圖所示,係在其中一段壁面處斷開,以增加環狀內凹口531的高度,供過濾器513結合。 The wall surface forming the annular inner recess 531 may also be provided as a discontinuity, as shown in Fig. 4A, being broken at a section of the wall surface to increase the height of the annular inner recess 531 for the filter 513 to be combined. .
本發明所提供之用於光罩的防塵框架結構,與其他習用技術相互比較時,其優點如下:本發明能夠應用於光罩表面上之框架結構,主要是能夠吸收下壓壓力,並減少該光罩表面所承受的下壓壓力,故藉由此結構的設計將能夠將光罩表面的微變形降低至1nm以下(習用光罩變形幅度達到2-3nm),因此若是進行雙重或多重曝光時,將不會因為圖案跑掉而無法對準,故能夠避免曝光的失敗。 The dust-proof frame structure for the reticle provided by the present invention has the following advantages when compared with other conventional techniques: the invention can be applied to the frame structure on the surface of the reticle, mainly capable of absorbing the pressing pressure and reducing the The pressing pressure on the surface of the reticle, so that the micro-deformation of the reticle surface can be reduced to less than 1 nm by the design of the structure (the reticle deformation range is 2-3 nm), so if double or multiple exposure is performed It will not be able to align because the pattern runs away, so it can avoid the failure of exposure.
本發明已透過上述之實施例揭露如上,然其並非用以限定本發明,任何熟悉此一技術領域具有通常知識者,在瞭解本發明前述的技術特徵及實施例,並在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之專利保護範圍須視本說明書所附之請求項所界定者為準。 The present invention has been disclosed in the above embodiments, and is not intended to limit the present invention. Any of those skilled in the art can understand the foregoing technical features and embodiments of the present invention without departing from the invention. In the spirit and scope, the scope of patent protection of the present invention is subject to the definition of the claims attached to the present specification.
Claims (6)
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TW105143457A TWI618974B (en) | 2016-12-28 | 2016-12-28 | Dust-proof frame structure for reticle |
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TW201823857A TW201823857A (en) | 2018-07-01 |
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Citations (5)
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US20010004508A1 (en) * | 1999-12-21 | 2001-06-21 | Shin-Etsu Chemical Co., Ltd. | Light exposure method, light exposure apparatus, pellicle and method for relieving warpage of pellicle membrane |
TWM334429U (en) * | 2007-10-04 | 2008-06-11 | Gudeng Prec Industral Co Ltd | Photo mask protection apparatus |
TW200931172A (en) * | 2007-08-29 | 2009-07-16 | Samsung Electronics Co Ltd | Apparatus and method for mounting pellicle |
CN105683834A (en) * | 2013-10-15 | 2016-06-15 | 旭化成株式会社 | Pellicle, photomask with pellicle, and method for manufacturing semiconductor element |
TWM540300U (en) * | 2016-12-28 | 2017-04-21 | Micro Lithography Inc | Dustproof frame structure for photomask |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20010004508A1 (en) * | 1999-12-21 | 2001-06-21 | Shin-Etsu Chemical Co., Ltd. | Light exposure method, light exposure apparatus, pellicle and method for relieving warpage of pellicle membrane |
TW200931172A (en) * | 2007-08-29 | 2009-07-16 | Samsung Electronics Co Ltd | Apparatus and method for mounting pellicle |
TWM334429U (en) * | 2007-10-04 | 2008-06-11 | Gudeng Prec Industral Co Ltd | Photo mask protection apparatus |
CN105683834A (en) * | 2013-10-15 | 2016-06-15 | 旭化成株式会社 | Pellicle, photomask with pellicle, and method for manufacturing semiconductor element |
TWM540300U (en) * | 2016-12-28 | 2017-04-21 | Micro Lithography Inc | Dustproof frame structure for photomask |
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