TWI616718B - 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法 Download PDF

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Publication number
TWI616718B
TWI616718B TW104143242A TW104143242A TWI616718B TW I616718 B TWI616718 B TW I616718B TW 104143242 A TW104143242 A TW 104143242A TW 104143242 A TW104143242 A TW 104143242A TW I616718 B TWI616718 B TW I616718B
Authority
TW
Taiwan
Prior art keywords
film
reflective
substrate
absorber
multilayer
Prior art date
Application number
TW104143242A
Other languages
English (en)
Chinese (zh)
Other versions
TW201612621A (en
Inventor
Kazuhiro Hamamoto
濱本和宏
Tatsuo Asakawa
淺川龍男
Tsutomu Shoki
笑喜勉
Original Assignee
Hoya Corporation
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation, Ｈｏｙａ股份有限公司 filed Critical Hoya Corporation
Publication of TW201612621A publication Critical patent/TW201612621A/zh
Application granted granted Critical
Publication of TWI616718B publication Critical patent/TWI616718B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H10P14/6329—
    • H10P76/4085—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
TW104143242A 2013-08-30 2014-08-29 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法 TWI616718B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-179123 2013-08-30
JP2013179123 2013-08-30

Publications (2)

Publication Number Publication Date
TW201612621A TW201612621A (en) 2016-04-01
TWI616718B true TWI616718B (zh) 2018-03-01

Family

ID=52586706

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104143242A TWI616718B (zh) 2013-08-30 2014-08-29 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法
TW103130025A TWI522729B (zh) 2013-08-30 2014-08-29 Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103130025A TWI522729B (zh) 2013-08-30 2014-08-29 Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device

Country Status (6)

Country Link
US (2) US9720315B2 (enExample)
JP (2) JP5716145B1 (enExample)
KR (2) KR102012783B1 (enExample)
SG (2) SG10201805334PA (enExample)
TW (2) TWI616718B (enExample)
WO (1) WO2015030159A1 (enExample)

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US10241390B2 (en) * 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
WO2018074512A1 (ja) 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
KR102741625B1 (ko) 2016-11-22 2024-12-16 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP2019053229A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 露光用マスクおよびその製造方法
US11106126B2 (en) 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
DE102019110706B4 (de) 2018-09-28 2024-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum Herstellen von EUV-Fotomasken sowie Ätzvorrichtung
SG11202109244UA (en) * 2019-03-28 2021-10-28 Hoya Corp Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
US11448956B2 (en) * 2019-09-05 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask
JP7226384B2 (ja) * 2020-04-10 2023-02-21 信越化学工業株式会社 反射型マスクブランク、その製造方法及び反射型マスク
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7268644B2 (ja) * 2020-06-09 2023-05-08 信越化学工業株式会社 マスクブランクス用ガラス基板
US11500282B2 (en) * 2020-06-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
KR20220044016A (ko) * 2020-09-29 2022-04-06 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
CN116560176A (zh) * 2021-12-31 2023-08-08 Sk恩普士有限公司 空白掩模、光掩模以及半导体器件制造方法
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP2024170294A (ja) * 2023-05-26 2024-12-06 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
JP2025073748A (ja) * 2023-10-27 2025-05-13 信越化学工業株式会社 反射型マスクブランク及び反射型マスクの製造方法

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TW201329612A (zh) * 2011-09-28 2013-07-16 Ｈｏｙａ股份有限公司 反射型遮罩基底、反射型遮罩及反射型遮罩之製造方法
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Also Published As

Publication number Publication date
KR101858947B1 (ko) 2018-05-17
US20160161837A1 (en) 2016-06-09
SG11201508899TA (en) 2015-11-27
JPWO2015030159A1 (ja) 2017-03-02
TWI522729B (zh) 2016-02-21
US20170329215A1 (en) 2017-11-16
US10191365B2 (en) 2019-01-29
TW201612621A (en) 2016-04-01
WO2015030159A1 (ja) 2015-03-05
JP2015133514A (ja) 2015-07-23
US9720315B2 (en) 2017-08-01
KR20160051681A (ko) 2016-05-11
JP6388841B2 (ja) 2018-09-12
TW201514614A (zh) 2015-04-16
KR20170121315A (ko) 2017-11-01
SG10201805334PA (en) 2018-08-30
JP5716145B1 (ja) 2015-05-13
KR102012783B1 (ko) 2019-08-21

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