TWI616476B - Thermosetting resin sheet and method of manufacturing electronic component package - Google Patents

Thermosetting resin sheet and method of manufacturing electronic component package Download PDF

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Publication number
TWI616476B
TWI616476B TW102143544A TW102143544A TWI616476B TW I616476 B TWI616476 B TW I616476B TW 102143544 A TW102143544 A TW 102143544A TW 102143544 A TW102143544 A TW 102143544A TW I616476 B TWI616476 B TW I616476B
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thermosetting resin
resin sheet
electronic component
heat
semiconductor wafer
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TW102143544A
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Chinese (zh)
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TW201428032A (en
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Tsuyoshi Torinari
Eiji Toyoda
yusaku Shimizu
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Nitto Denko Corp
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    • H—ELECTRICITY
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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Abstract

本發明提供一種以大面積進行樹脂密封時亦不會發生樹脂組成變動之可穩定地製作高品質電子零件封裝之熱硬化性樹脂薄片以及使用其之電子零件封裝之製造方法。本發明係一種熱硬化性樹脂薄片，其包含無機填充劑，平面視投影面積為31400mm2以上之B-階段狀態。 The present invention provides a thermosetting resin sheet which can stably produce a high-quality electronic component package without causing a change in resin composition when the resin is sealed in a large area, and a method of manufacturing the electronic component package using the same. The present invention is a thermosetting resin sheet comprising an inorganic filler having a B-stage state with a projected area of 31,400 mm 2 or more in plan view.

Description

熱硬化性樹脂薄片及電子零件封裝之製造方法 Thermosetting resin sheet and method of manufacturing electronic component package

本發明係關於熱硬化性樹脂薄片及電子零件封裝之製造方法。 The present invention relates to a method for producing a thermosetting resin sheet and an electronic component package.

電子零件封裝之製作中，代表性係採用以密封樹脂將固定於基板或暫時固定材等之電子零件予以密封，並視需要以成為電子零件單位封裝之方式切割密封物之順序。近年來，以降低成本為目的而開展出自晶圓製作電子零件且直接以該狀態進行密封而製作電子零件封裝之技術、以晶圓狀密封複數個電子零件而成為密封封裝之技術、或者密封大面積之電子零件，隨後藉由切割進行單片化之技術等。作為此種利用晶圓狀之密封物之晶圓密封加工的樹脂密封，已提案有藉由利用液狀之熱硬化性樹脂組成物之灌封等進行之技術(專利文獻1)。 In the production of the electronic component package, it is representative that the electronic component fixed to the substrate or the temporary fixing material is sealed with a sealing resin, and the sealing of the electronic component is required to be sealed as needed. In recent years, in order to reduce the cost, the technology for manufacturing electronic components by directly manufacturing the electronic components by wafer sealing, and sealing a plurality of electronic components in a wafer shape to form a sealed package has been developed, or the sealing is large. The electronic parts of the area are then singulated by cutting. As a resin seal for the wafer sealing process using a wafer-like seal, a technique of potting by a liquid thermosetting resin composition or the like has been proposed (Patent Document 1).

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本專利第4403631號 [Patent Document 1] Japanese Patent No. 4403631

今後，如上述之晶圓密封加工基於降低成本之目的而考慮逐步朝向晶圓狀密封物之大面積化發展。然而，使用液狀樹脂以大面積進行一次密封時，由於其樹脂特性在成型時樹脂會流動而產生樹脂組成之變動，而有無法製作穩定品質之半導體裝置之虞。 In the future, wafer sealing processing as described above is expected to gradually increase toward a large area of wafer-like sealing materials for the purpose of cost reduction. However, when the liquid resin is used for primary sealing in a large area, the resin composition may flow during the molding to cause a change in the resin composition, and there is a possibility that a semiconductor device of stable quality cannot be produced.

本發明之目的係提供一種即使以大面積之樹脂密封時仍不會發生樹脂組成之變動，且可穩定地製作高品質之電子零件封裝之熱硬化性樹脂薄片及使用其之電子零件封裝之製造方法。 An object of the present invention is to provide a thermosetting resin sheet which can stably produce a high-quality electronic component package and a manufacturing of an electronic component package using the same, which does not cause a change in the resin composition even when sealed with a large-area resin. method.

本發明人等進行積極檢討之結果，發現藉由採用特定之熱硬化性樹脂薄片可解決上述課題，因而完成本發明。 As a result of a positive review by the present inventors, it has been found that the above problems can be solved by using a specific thermosetting resin sheet, and thus the present invention has been completed.

亦即，本發明係 That is, the present invention is

一種熱硬化性樹脂薄片，其特徵為包含無機填充劑，且為平面視投影面積為31400mm2以上之B-階段狀態。 A thermosetting resin sheet characterized by comprising an inorganic filler and having a B-stage state in which a projected area of a plane is 31400 mm 2 or more.

該熱硬化性樹脂薄片由於平面視投影面積設為31400mm2以上，故可容易地進行大面積之電子零件(例如，8吋晶圓等)之樹脂密封，同時亦可將複數個電子零件一次樹脂密封成大面積之晶圓狀。此外，該熱硬化 性樹脂薄片由於處於B-階段狀態，故樹脂密封時之雖某程度軟化但尚未流動化，其結果，可抑制以無機填充劑之偏向局部化為代表之樹脂組成之變動，可製作穩定品質之電子零件封裝。再者由於處於B-階段狀態故處理性良好，例如不使用樹脂密封時之特殊模具或隔離片等，即可藉由簡易之加壓加工進行樹脂密封。 Since the thermosetting resin sheet has a planar viewing area of 31,400 mm 2 or more, resin sealing of a large-area electronic component (for example, an 8-inch wafer or the like) can be easily performed, and a plurality of electronic components can be once resin. Sealed into a large area of wafer. In addition, since the thermosetting resin sheet is in a B-stage state, the resin is softened to some extent during the resin sealing, but it is not fluidized. As a result, variation in the resin composition represented by the partial localization of the inorganic filler can be suppressed. It can produce stable quality electronic parts package. Further, since it is in the B-stage state, the handleability is good. For example, a special mold or a separator which is not used for resin sealing can be used, and resin sealing can be performed by simple press working.

又，本說明書中「B-階段」係指根據JIS K6800之規定，熱硬化性樹脂之硬化中間狀態，且意指加熱樹脂時軟化，與某種溶劑接觸時會膨潤，但不完全熔融．溶解之狀態。 Also, "B-stage" in this specification refers to JIS according to JIS K6800 stipulates that the thermosetting resin is in an intermediate state of hardening, and means that it softens when the resin is heated, and swells when it comes into contact with a certain solvent, but does not completely melt. The state of dissolution.

該熱硬化性樹脂薄片在熱硬化前之彈性率在 90~130℃之溫度範圍中較好為1.5×103Pa以上、3×103Pa以下。藉由使熱硬化前之彈性率成為上述範圍，可一面防止樹脂之流動化，且即使電子零件或被接著體之形狀複雜亦可以仿造其形狀之方式充分軟化，可更有效率地製作高品質之電子零件封裝。又，熱硬化前之熱硬化性樹脂薄片之彈性率之測定順序係如實施例之記載。 The elastic modulus of the thermosetting resin sheet before thermal curing is preferably 1.5 × 10 3 Pa or more and 3 × 10 3 Pa or less in a temperature range of 90 to 130 °C. By setting the elastic modulus before the thermosetting to the above range, it is possible to prevent the fluid from flowing, and even if the shape of the electronic component or the adherend is complicated, the shape can be sufficiently softened, and the high quality can be produced more efficiently. Electronic parts package. Moreover, the order of measurement of the elastic modulus of the thermosetting resin sheet before thermosetting is as described in the examples.

該熱硬化性樹脂薄片中，前述無機填充劑之 平均粒徑較好為54μm以下。藉此，即使於樹脂密封時軟化仍可良好地維持無機填充劑之分散狀態，可抑制樹脂組成之變動。 In the thermosetting resin sheet, the aforementioned inorganic filler The average particle diameter is preferably 54 μm or less. Thereby, even if softened at the time of resin sealing, the dispersion state of the inorganic filler can be favorably maintained, and the fluctuation of the resin composition can be suppressed.

該熱硬化性樹脂薄片中，前述無機填充劑之 含量較好為70重量%以上、95重量%以下。藉由使無機填充劑之含量成為上述範圍，可簡便地獲得適於以大面積 進行樹脂密封之B-階段狀態，並且可獲得樹脂密封時之適度軟化性。 In the thermosetting resin sheet, the aforementioned inorganic filler The content is preferably 70% by weight or more and 95% by weight or less. By making the content of the inorganic filler into the above range, it is easy to obtain a large area suitable for use. The B-stage state of the resin sealing is performed, and moderate softening property at the time of resin sealing can be obtained.

該熱硬化性樹脂薄片較好包含彈性體、環氧 樹脂及酚樹脂。藉此，可確保樹脂密封前之良好處理性及軟化性，及樹脂密封後(熱硬化後)之高度信賴性。 The thermosetting resin sheet preferably contains an elastomer, an epoxy Resin and phenolic resin. Thereby, it is possible to ensure good handleability and softening property before resin sealing, and high reliability after resin sealing (after heat curing).

本發明亦包含將該熱硬化性薄片之長條體捲 取成捲狀之熱硬化性樹脂薄片捲繞體。 The invention also includes a strip of the thermosetting sheet A roll-shaped thermosetting resin sheet wound body was taken.

再者，本發明亦包含一種電子零件封裝之製造方法，其特徵為包含下述步驟：以覆蓋一或複數之電子零件之方式層合該熱硬化性樹脂薄片於該電子零件上之層合步驟、及使前述熱硬化性樹脂薄片熱硬化形成密封體之密封體形成步驟，其中，前述熱硬化性樹脂薄片之平面視投影面積所占的前述電子零件之平面視投影面積的比率為50%以上。 Furthermore, the present invention also includes a method of manufacturing an electronic component package, comprising the steps of laminating the thermosetting resin sheet on the electronic component in such a manner as to cover one or more electronic components. And a sealing body forming step of thermally curing the thermosetting resin sheet to form a sealed body, wherein a ratio of a planar view area of the electronic component occupied by a plane-viewing area of the thermosetting resin sheet is 50% or more .

以該製造方法，由於使用特定之熱硬化性樹脂薄片，故可容易且有效地進行電子零件之以大面積進行樹脂密封。且，由於熱硬化性樹脂薄片之平面視投影面積所占的電子零件之平面視投影面積之比例(以下亦簡稱為「面積占有率」)為50%以上，故可增加每單位面積之電子零件加工數，而可更高效率且低成本地製造。 According to this production method, since a specific thermosetting resin sheet is used, resin sealing can be easily and efficiently performed on a large area of the electronic component. In addition, since the ratio of the plane-projected area of the electronic component occupied by the plane-viewing area of the thermosetting resin sheet (hereinafter also referred to as "area occupancy ratio") is 50% or more, the electronic parts per unit area can be increased. The number of processes can be manufactured more efficiently and at low cost.

該製造方法中，較好前述層合步驟係藉由熱加壓加工進行。該製造方法中，處於B-階段狀態之特定熱硬化性樹脂薄片在樹脂密封時不會充分軟化亦不會流動 化，而可一定程度維持初期狀態之形狀，其結果，不須使用用以維持及成形形狀的特殊模具等，可藉由簡易之熱加壓加工而將熱硬化性樹脂薄片層合於電子零件上。 In the production method, it is preferred that the laminating step be carried out by hot press working. In the production method, the specific thermosetting resin sheet in the B-stage state does not sufficiently soften or flow when the resin is sealed. The shape of the initial state can be maintained to some extent, and as a result, it is not necessary to use a special mold for maintaining and molding the shape, and the thermosetting resin sheet can be laminated to the electronic component by simple hot pressing. on.

該製造方法亦可進而包含切割前述密封體而形成電子零件模組之切割步驟。由於可大面積地進行電子零件密封加工，故可使製品設計幅度更為寬廣。 The manufacturing method may further include a cutting step of forming the electronic component module by cutting the sealing body. Since the electronic parts can be sealed in a large area, the design of the product can be made wider.

該製造方法中，前述電子零件可為半導體晶片或半導體晶圓。 In the manufacturing method, the electronic component may be a semiconductor wafer or a semiconductor wafer.

11、21、31‧‧‧熱硬化性樹脂薄片 11, 21, 31‧‧‧ thermosetting resin sheet

11a‧‧‧支撐體 11a‧‧‧Support

13、33‧‧‧半導體晶片 13, 33‧‧‧ semiconductor wafer

15、25、35‧‧‧密封體 15, 25, 35‧‧‧ Seals

16、26、36‧‧‧研削體 16, 26, 36‧‧‧ grinding body

18、28、38‧‧‧電子模組 18, 28, 38‧‧‧ Electronic modules

29‧‧‧半導體晶圓 29‧‧‧Semiconductor Wafer

圖1係模式性顯示本發明一實施形態之熱硬化性樹脂薄片之剖面圖。 Fig. 1 is a cross-sectional view schematically showing a thermosetting resin sheet according to an embodiment of the present invention.

圖2A係模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 2A is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to an embodiment of the present invention.

圖2B係模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 2B is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to an embodiment of the present invention.

圖2C係模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 2C is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to an embodiment of the present invention.

圖2D係模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 2D is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to an embodiment of the present invention.

圖2E係模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 2E is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to an embodiment of the present invention.

圖3A係模式性顯示本發明另一實施形態之電子零件 封裝之製造方法之一步驟的剖面圖。 3A is a schematic view showing an electronic component according to another embodiment of the present invention; A cross-sectional view of one of the steps of the manufacturing method of the package.

圖3B係模式性顯示本發明另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 3B is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to another embodiment of the present invention.

圖3C係模式性顯示本發明另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 3C is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to another embodiment of the present invention.

圖3D係模式性顯示本發明另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 3D is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to another embodiment of the present invention.

圖3E係模式性顯示本發明另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 3E is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to another embodiment of the present invention.

圖4A係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 4A is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4B係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 4B is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4C係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 4C is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4D係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 4D is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4E係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 4E is a cross-sectional view schematically showing one step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4F係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 4F is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

圖4G係模式性顯示本發明又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Fig. 4G is a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to still another embodiment of the present invention.

〈第1實施形態〉 <First embodiment> 〔熱硬化性樹脂薄片〕 [thermosetting resin sheet]

針對本實施形態之熱硬化性樹脂薄片邊參照圖1邊加以說明。圖1係模式性顯示本發明一實施形態之熱硬化性樹脂薄片之剖面圖。處於B-階段狀態之熱硬化性樹脂薄片11係以層合於代表性之聚對苯二甲酸乙二酯(PET)薄膜等之支撐體11a上之狀態而提供。又，亦可對支撐體11a實施為了容易進行熱硬化性樹脂薄片11之剝離的脫模處理。 The thermosetting resin sheet of the present embodiment will be described with reference to Fig. 1 . Fig. 1 is a cross-sectional view schematically showing a thermosetting resin sheet according to an embodiment of the present invention. The thermosetting resin sheet 11 in the B-stage state is provided in a state of being laminated on a support 11a such as a representative polyethylene terephthalate (PET) film. Further, the support 11a may be subjected to a mold release treatment for facilitating the peeling of the thermosetting resin sheet 11.

熱硬化性樹脂薄片11之平面視投影面積若為 31400mm2以上即可，較好為49063mm2以上，更好為70650mm2以上。又，平面視投影面積之上限並無特別限制，可依據製造產線設計適當設定，例如可為70650mm2以下(相當於12吋晶圓)，亦可為未來之125600mm2以下(相當於16吋晶圓)。當然，亦可適當地採用其以上之平面視投影面積。藉由使熱硬化性樹脂薄片11之平面視投影面積成為上述範圍，可高生產性地進行大面積之電子零件密封加工。 The plan view area of the thermosetting resin sheet 11 may be 31,400 mm 2 or more, preferably 49,063 mm 2 or more, more preferably 70,650 mm 2 or more. Further, the upper limit of the projected area of the plane is not particularly limited, and may be appropriately set according to the design of the manufacturing line, and may be, for example, 70,650 mm 2 or less (corresponding to 12 吋 wafer) or 125 650 mm 2 or less (equivalent to 16 未来). Wafer). Of course, the above-mentioned plane view projection area can also be suitably used. By making the plan view area of the thermosetting resin sheet 11 into the above range, it is possible to perform large-area electronic component sealing processing with high productivity.

熱硬化性樹脂薄片11之平面視形狀並無特別 限制，可採用圓形、橢圓形、跑道形、矩形、正方形、菱形、平面四邊形、或具有任意內角之三角形、四角形、五角形、六角形等、具有以直線、曲線或該等之組合形成之 輪廓之任意形狀。 The planar shape of the thermosetting resin sheet 11 is not particularly The limitation may be a circle, an ellipse, a racetrack shape, a rectangle, a square, a diamond, a plane quadrilateral, or a triangle, a quadrangle, a pentagon, a hexagon, or the like having any internal angle, and is formed by a straight line, a curve, or a combination thereof. Any shape of the outline.

熱硬化前之熱硬化性樹脂薄片11之彈性率在 90~130℃之溫度範圍中其下限較好為1.5×103Pa以上，更好為1.7×103Pa以上，又更好為2.5×103Pa以上。另一方面，熱硬化前之彈性率之上限較好為3×104Pa以下，更好為2×104Pa以下，又更好為1.5×104Pa以下。藉由使熱硬化前之彈性率成為上述範圍，可一面防止樹脂之流動化，且即使電子零件之形狀複雜仍可以仿造其形狀之方式充分軟化，而可更有效地製作高品質之電子零件封裝。 The elastic modulus of the thermosetting resin sheet 11 before thermosetting is preferably in the range of 90 to 130 ° C, and the lower limit thereof is preferably 1.5 × 10 3 Pa or more, more preferably 1.7 × 10 3 Pa or more, and still more preferably 2.5 × 10 3 Pa or more. On the other hand, the upper limit of the elastic modulus before thermal curing is preferably 3 × 10 4 Pa or less, more preferably 2 × 10 4 Pa or less, still more preferably 1.5 × 10 4 Pa or less. By setting the elastic modulus before the thermosetting to the above range, it is possible to prevent the fluid from flowing, and even if the shape of the electronic component is complicated, the shape can be sufficiently softened, and the high-quality electronic component package can be more efficiently produced. .

形成熱硬化性樹脂薄片之樹脂組成物若具有 如上述之特性，且可利用於半導體晶片等之電子零件之樹脂密封者，則無特別限制，作為較佳者可列舉例如含有以下之A成分至E成分之環氧樹脂組成物。又，C成分係視需要添加亦可不添加。 The resin composition forming the thermosetting resin sheet has There is no particular limitation on the resin seal of the electronic component such as a semiconductor wafer, and the epoxy resin composition containing the following components A to E is preferable. Further, the component C may or may not be added as needed.

A成分：環氧樹脂 Component A: Epoxy

B成分：酚樹脂 B component: phenolic resin

C成分：彈性體 Component C: Elastomer

D成分：無機填充劑 D component: inorganic filler

E成分：硬化促進劑 Component E: Hardening accelerator

(A成分) (component A)

環氧樹脂(A成分)並無特別限制。可使用例如三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、改質雙酚A型環氧樹脂、雙酚A型環氧樹脂、 雙酚F型環氧樹脂、改質雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚酚醛清漆型環氧樹脂、苯氧樹脂等各種環氧樹脂。該等環氧樹脂可單獨使用亦可併用2種以上。 The epoxy resin (component A) is not particularly limited. For example, a triphenylmethane type epoxy resin, a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a modified bisphenol A type epoxy resin, a bisphenol A type epoxy resin, or the like may be used. Various epoxy resins such as bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type epoxy resin, phenol novolak type epoxy resin, phenoxy resin. These epoxy resins may be used alone or in combination of two or more.

就確保環氧樹脂硬化後之韌性及環氧樹脂之 反應性之觀點而言，以環氧當量150~250、軟化點或熔點為50~130℃之在常溫為固態者較佳，其中，就信賴性之觀點而言，較好為三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂。 To ensure the toughness and epoxy resin of the epoxy resin after hardening From the viewpoint of reactivity, it is preferred that the epoxy group has an epoxy equivalent of 150 to 250, a softening point or a melting point of 50 to 130 ° C at room temperature, and among them, triphenylmethane is preferred from the viewpoint of reliability. Epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin.

且，就低應力性之觀點而言，以具有乙縮醛 基或聚氧伸烷基等柔軟性骨架之改質雙酚A型環氧樹脂較佳，具有乙縮醛基之改質雙酚A型環氧樹脂由於為液狀且處理良好，故特別適用。 And, from the viewpoint of low stress, with acetal A modified bisphenol A type epoxy resin having a soft skeleton such as a polyoxyalkylene group or the like, and a modified bisphenol A type epoxy resin having an acetal group is particularly suitable because it is liquid and well handled. .

環氧樹脂(A成分)之含量較好設定為相對 於環氧樹脂組成物全體為1~10重量%之範圍。 The content of epoxy resin (component A) is preferably set to be relative The entire epoxy resin composition is in the range of 1 to 10% by weight.

(B成分) (B component)

酚樹脂(B成分)若為與環氧樹脂(A成分)之間引起硬化反應者即無特別限制。可使用例如酚酚醛清漆樹脂、酚芳烷基樹脂、聯苯芳烷基樹脂、二環戊二烯型酚樹脂、甲酚酚醛清漆樹脂、間苯二酚樹脂等。該等酚樹脂可單獨使用，亦可併用2種以上。 The phenol resin (component B) is not particularly limited as long as it causes a hardening reaction with the epoxy resin (component A). For example, a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resorcin resin, or the like can be used. These phenol resins may be used singly or in combination of two or more.

作為酚樹脂，就與環氧樹脂(A成分)之反 應性之觀點而言，較好使用羥基當量為70~250，軟化點為50~110℃者，其中就硬化反應性高之觀點而言，可較好 地使用酚酚醛清漆樹脂。且，就信賴性之觀點而言，亦可較好地使用如酚酚醛清漆樹脂或聯苯芳烷基樹脂之低吸濕性者。 As a phenolic resin, it is the opposite of epoxy resin (component A). From the viewpoint of the nature, it is preferred to use a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C, which is preferable in terms of high hardening reactivity. A phenol novolak resin was used. Further, from the viewpoint of reliability, a low hygroscopic property such as a phenol novolak resin or a biphenyl aralkyl resin can be preferably used.

環氧樹脂(A成分)與酚樹脂(B成分)之調 配比例，就硬化反應性之觀點而言，較好以使酚樹脂(B成分)中之羥基之合計相對於環氧樹脂(A成分)中之環氧基1當量成為0.7~1.5當量之方式加以調配，更好為0.9~1.2當量。 Adjustment of epoxy resin (component A) and phenolic resin (component B) In terms of the hardening reactivity, the total amount of the hydroxyl groups in the phenol resin (component B) is preferably 0.7 to 1.5 equivalents per equivalent of the epoxy group in the epoxy resin (component A). It is preferably adjusted to be 0.9 to 1.2 equivalents.

(C成分) (C component)

與環氧樹脂(A成分)及酚樹脂(B成分)一起使用之彈性體(C成分)係對環氧樹脂組成物賦予欲利用熱硬化性樹脂薄片進行環氧樹脂組成物電子零件之密封所需之可撓性者，且若係可發揮該作用者則其構造並無特別限制。可使用例如聚丙烯酸酯等各種丙烯酸系共聚物、苯乙烯丙烯酸酯系共聚物、丁二烯橡膠、苯乙烯-丁二烯橡膠(SBR)、乙烯-乙酸乙烯酯共聚物(EVA)、異戊二烯橡膠、丙烯腈橡膠等橡膠質聚合物。其中，為了易於朝環氧樹脂(A成分)之分散，且與環氧樹脂(A成分)之反應性亦高，且基於可提高所得熱硬化性樹脂薄片之耐熱性或強度之觀點而言，較好使用丙烯酸系共聚物。該等可單獨使用，亦可併用2種以上。 An elastomer (component C) used together with an epoxy resin (component A) and a phenol resin (component B) is a resin composition to which an epoxy resin composition is to be sealed with an epoxy resin composition. If it is required to be flexible, and the structure is not particularly limited, the structure is not particularly limited. For example, various acrylic copolymers such as polyacrylate, styrene acrylate copolymer, butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), and isoprene can be used. A rubbery polymer such as a diene rubber or an acrylonitrile rubber. In order to facilitate the dispersion of the epoxy resin (component A), the reactivity with the epoxy resin (component A) is high, and the heat resistance or strength of the obtained thermosetting resin sheet can be improved. An acrylic copolymer is preferably used. These may be used alone or in combination of two or more.

又，丙烯酸系共聚物可藉由以常用方法使以 特定混合比之丙烯酸單體混合物進行自由基聚合而合成。 至於自由基聚合方法係使用有機溶劑於溶劑中進行之溶液聚合法，或邊使原料單體分散於水中邊進行聚合之懸浮聚合法。此時所用之聚合起始劑係使用例如2,2’-偶氮雙異丁腈、2,2’-偶氮雙-(2,4-二甲基戊腈)、2,2’-偶氮雙-4-甲氧基-2,4-二甲基戊腈、其他偶氮系或重氮系聚合起始劑、苯甲醯基過氧化物及甲基乙基酮過氧化物等過氧化物系聚合起始劑等。又，懸浮聚合時宜添加例如如聚丙烯醯胺、聚乙烯醇等之分散劑。 Also, the acrylic copolymer can be obtained by a usual method. The acrylic monomer mixture of a specific mixing ratio is synthesized by radical polymerization. The radical polymerization method is a solution polymerization method in which an organic solvent is used in a solvent, or a suspension polymerization method in which a raw material monomer is dispersed in water to carry out polymerization. The polymerization initiator used at this time is, for example, 2,2'-azobisisobutyronitrile, 2,2'-azobis-(2,4-dimethylvaleronitrile), 2,2'-couple. Nitrogen bis-4-methoxy-2,4-dimethylvaleronitrile, other azo or diazo polymerization initiators, benzhydryl peroxide and methyl ethyl ketone peroxide An oxide polymerization initiator or the like. Further, in the suspension polymerization, for example, a dispersant such as polypropylene decylamine or polyvinyl alcohol is preferably added.

彈性體(C成分)之含量為環氧樹脂組成物 整體之15~30重量%。彈性體(C成分)之含量未達15重量%時，難以獲得熱硬化性樹脂薄片11之柔軟性及可撓性，進而抑制熱硬化性樹脂薄片翹曲之樹脂密封亦變困難。相反地上述含量超過30重量%時，熱硬化性樹脂薄片11之熔融黏度變高而使電子零件之埋入性下降，同時會見到熱硬化性樹脂薄片11之硬化體強度及耐熱性下降之傾向。 The content of the elastomer (component C) is an epoxy resin composition The overall 15~30% by weight. When the content of the elastomer (component C) is less than 15% by weight, it is difficult to obtain the flexibility and flexibility of the thermosetting resin sheet 11, and it is also difficult to prevent the resin seal of the thermosetting resin sheet from being warped. On the other hand, when the content is more than 30% by weight, the melt viscosity of the thermosetting resin sheet 11 is increased, the embedding property of the electronic component is lowered, and the tendency of the hardened body strength and heat resistance of the thermosetting resin sheet 11 is lowered. .

且，彈性體(C成分)相對於環氧樹脂(A成 分)之重量比率(C成分之重量/A成分之重量)較好設定在3~4.7之範圍。其理由為上述重量比率未達3時，難以控制熱硬化性樹脂薄片11之流動性，超過4.7時會見到熱硬化性樹脂薄片11對電子零件之接著性變差之傾向。 Moreover, the elastomer (component C) is relative to the epoxy resin (A The weight ratio (weight of component C / weight of component A) of the component is preferably set in the range of 3 to 4.7. When the weight ratio is less than 3, it is difficult to control the fluidity of the thermosetting resin sheet 11, and when it exceeds 4.7, the adhesion of the thermosetting resin sheet 11 to the electronic component tends to be deteriorated.

(D成分) (D component)

無機質填充劑(D成分)並無特別限制，可使用以往 習知之各種填充劑，列舉為例如石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼之粉末。該等可單獨使用，亦可併用2種以上。 The inorganic filler (component D) is not particularly limited and can be used in the past. Various fillers are exemplified by quartz glass, talc, cerium oxide (melting cerium oxide or crystalline cerium oxide, etc.), aluminum oxide, aluminum nitride, cerium nitride, and boron nitride. These may be used alone or in combination of two or more.

其中，基於藉由減低環氧樹脂組成物之硬化 體之熱線膨脹係數而降低內部應力，結果可抑制電子零件密封後之熱硬化性樹脂薄片11之翹曲之觀點而言，較好使用二氧化矽粉末，二氧化矽粉末中更好使用熔融二氧化矽。熔融二氧化矽粉末列舉為球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末，但就流動性之觀點而言，最好使用球狀熔融二氧化矽粉末。其中，較好使用平均粒徑為54μm以下之範圍者，更好使用0.1~30μm之範圍者，最好使用0.3~15μm之範圍者。 Among them, based on reducing the hardening of the epoxy resin composition The thermal expansion coefficient of the body reduces the internal stress, and as a result, it is preferable to use the cerium oxide powder and the cerium oxide powder in the cerium oxide powder from the viewpoint of suppressing the warpage of the thermosetting resin sheet 11 after the electronic component is sealed. Yttrium oxide. The molten cerium oxide powder is exemplified by spherical molten cerium oxide powder and crushed molten cerium oxide powder. However, from the viewpoint of fluidity, it is preferable to use spherical molten cerium oxide powder. Among them, those having an average particle diameter of 54 μm or less are preferably used, and those having a range of 0.1 to 30 μm are preferably used, and those having a range of 0.3 to 15 μm are preferably used.

又，平均粒徑可使用任意自母集團抽取之試 料，藉由使用雷射繞射散射式粒度分佈測定裝置測定而導出。 Also, the average particle size can be used for any test taken from the parent group. The material was derived by measurement using a laser diffraction scattering type particle size distribution measuring device.

無機質填充劑(D成分)之含量較好為環氧 樹脂組成物全體之70~95重量%，更好為75~92重量%，又更好為80~90重量%。無機質填充劑(D成分)之含量未達50重量%時，由於環氧樹脂組成物之硬化物之線膨脹係數變大，故而見到熱硬化性樹脂薄片11之翹曲變大之傾向。另一方面，上述含量超過90重量%時，由於熱硬化性樹脂薄片11之柔軟性或流動性變差，故見到與電子零件之接著性下降之傾向。 The content of the inorganic filler (D component) is preferably epoxy The resin composition is 70 to 95% by weight, more preferably 75 to 92% by weight, still more preferably 80 to 90% by weight. When the content of the inorganic filler (D component) is less than 50% by weight, the linear expansion coefficient of the cured product of the epoxy resin composition is increased, so that the warpage of the thermosetting resin sheet 11 tends to be large. On the other hand, when the content is more than 90% by weight, the flexibility or fluidity of the thermosetting resin sheet 11 is deteriorated, so that the adhesion to the electronic component tends to decrease.

(E成分) (E component)

硬化促進劑(E成分)若為能使環氧樹脂與酚樹脂之硬化進行者即無特別限制，但就硬化性與保存性之觀點而言，較好使用三苯膦或四苯基鏻四苯基硼酸鹽等之有機磷系化合物，或咪唑系化合物。該等硬化促進劑可單獨使用，亦可與其他硬化促進劑併用。 The curing accelerator (component E) is not particularly limited as long as it can cure the epoxy resin and the phenol resin, but triphenylphosphine or tetraphenylphosphonium is preferably used from the viewpoint of hardenability and preservability. An organophosphorus compound such as a phenylborate or an imidazole compound. These hardening accelerators may be used singly or in combination with other hardening accelerators.

硬化促進劑(E成分)之含量相對於環氧樹脂 (A成分)及酚樹脂(B成分)之合計100重量份較好為0.1~5重量份。 The content of the hardening accelerator (component E) relative to the epoxy resin The total of 100 parts by weight of the component (A component) and the phenol resin (component B) is preferably 0.1 to 5 parts by weight.

(其他成分) (other ingredients)

且，環氧樹脂組成物中，除了A成分至E成分以外，亦可添加難燃劑成分。難燃劑組成分可使用例如氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合金屬氫氧化物等各種金屬氫氧化物。 Further, in the epoxy resin composition, a flame retardant component may be added in addition to the components A to E. As the flame retardant component, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and a composite metal hydroxide can be used.

金屬氫氧化物之平均粒徑，就確保環氧樹脂 組成物加熱時之適當流動性之觀點而言，平均粒徑較好為1~10μm，更好為2~5μm。金屬氫氧化物之平均粒徑未達1μm時，難以均勻分散於環氧樹脂組成物中，並且有在環氧樹脂組成物加熱時無法獲得充分流動性之傾向。另外，平均粒徑超過10μm時，金屬氫氧化物(E成分)之每添加量之表面積變小，故見到難燃效果下降之傾向。 The average particle size of the metal hydroxide ensures epoxy resin The average particle diameter is preferably from 1 to 10 μm, more preferably from 2 to 5 μm, from the viewpoint of appropriate fluidity when the composition is heated. When the average particle diameter of the metal hydroxide is less than 1 μm, it is difficult to uniformly disperse in the epoxy resin composition, and there is a tendency that sufficient fluidity cannot be obtained when the epoxy resin composition is heated. In addition, when the average particle diameter exceeds 10 μm, the surface area per amount of the metal hydroxide (component E) is small, so that the flame retarding effect tends to decrease.

且，難燃劑成分除上述金屬氫氧化物以外， 亦可使用磷腈(phosphazene)化合物。磷腈化合物可作為例如SPR-100、SA-100、SP-100(以上為大塚化學股份有限公司)、FP-100、FP-110(以上為伏見製藥所股份有限公司)等市售品獲得。 Moreover, the flame retardant component is in addition to the above metal hydroxide, Phosphazene compounds can also be used. The phosphazene compound can be obtained, for example, as a commercial product such as SPR-100, SA-100, SP-100 (above, Otsuka Chemical Co., Ltd.), FP-100, and FP-110 (above, Fushimi Pharmaceutical Co., Ltd.).

基於少量即可發揮難燃效果之觀點而言，較 好為以式(1)或式(2)表示之磷腈化合物，該等磷腈化合物中所含磷元素之含有率較好為12重量%以上。 Based on the viewpoint that a small amount can exert a flame retardant effect, The phosphazene compound represented by the formula (1) or the formula (2) is preferable, and the content of the phosphorus element contained in the phosphazene compound is preferably 12% by weight or more.

(式(1)中，n為3~25之整數，R1及R2為相同或不同，係具有選自由烷氧基、苯氧基、胺基、羥基及烯丙基所組成群組的官能基之1價有機基)。 (In the formula (1), n is an integer of from 3 to 25, and R 1 and R 2 are the same or different and have a group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group. a monovalent organic group of a functional group).

(式(2)中，n及m分別獨立為3~25之整數，R3及R5為相同或不同，係具有選自由烷氧基、苯氧基、胺基、羥基及烯丙基所組成群組的官能基之1價有機基，R4為具有選自由烷氧基、苯氧基、胺基、羥基及烯丙基所成群組的官能基之2價有機基)。 (In the formula (2), n and m are each independently an integer of from 3 to 25, and R 3 and R 5 are the same or different and are selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group and an allyl group. The monovalent organic group of the functional group constituting the group, and R 4 is a divalent organic group having a functional group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group).

此外，就安定性及抑制孔隙生成之觀點而 言，較好使用以式(3)表示之環狀磷腈寡聚物。 In addition, in terms of stability and inhibition of pore formation In other words, a cyclic phosphazene oligomer represented by the formula (3) is preferably used.

(式(3)中，n為3~25之整數，R6及R7為相同或不同，係氫、羥基、烷基、烷氧基或縮水甘油基)。 (In the formula (3), n is an integer of from 3 to 25, and R 6 and R 7 are the same or different and are hydrogen, a hydroxyl group, an alkyl group, an alkoxy group or a glycidyl group).

以上述式(3)表示之環狀磷腈寡聚物可作為例如FP-100、FP-110(以上為伏見製藥所股份有限公司)等市售品取得。 The cyclic phosphazene oligomer represented by the above formula (3) can be obtained as a commercial product such as FP-100 or FP-110 (above, Fushimi Pharmaceutical Co., Ltd.).

磷腈化合物之含量較好為含有環氧樹脂組成物中所含之環氧樹脂(A成分)、酚樹脂(B成分)、彈性體(D成分)、硬化促進劑(E成分)及磷腈化合物(其他成分)之有機成分全體之10~30重量%。亦即，磷腈化合物之含量未達有機成分全體之10重量%時，熱硬化性樹脂薄片11之難燃性會下降，並且對被接著體(例如搭載電子零件之基板等)的凹凸追隨性降低，見到發生生孔隙之傾向。上述含量超過有機成分全體之30重量%時，熱硬化性樹脂薄片11之表面容易發生觸黏性，會見到對被接著體難以對位等作業性下降之傾向。 The content of the phosphazene compound is preferably an epoxy resin (component A) contained in the epoxy resin composition, a phenol resin (component B), an elastomer (component D), a hardening accelerator (component E), and a phosphazene. 10 to 30% by weight of the total organic component of the compound (other components). In other words, when the content of the phosphazene compound is less than 10% by weight based on the entire organic component, the flame retardancy of the thermosetting resin sheet 11 is lowered, and the adhesion of the adherend (for example, a substrate on which an electronic component is mounted) is observed. Lower, see the tendency to produce porosity. When the content is more than 30% by weight of the entire organic component, the surface of the thermosetting resin sheet 11 tends to be sticky, and the workability such as difficulty in alignment of the adherend tends to be lowered.

且，併用上述金屬氫氧化物及磷腈化合物，亦可獲得確保薄片密封所需之可撓性，而且難燃性優異之熱硬化性樹脂薄片11。藉由併用兩者，可獲得僅使用金屬氫氧化物時之充分難燃性與僅使用磷腈時之充分可撓性。 Further, by using the above-mentioned metal hydroxide and phosphazene compound, it is possible to obtain a thermosetting resin sheet 11 which is excellent in flame retardancy and which is excellent in flame retardancy. By using both, it is possible to obtain sufficient flame retardancy when only a metal hydroxide is used and sufficient flexibility when only phosphazene is used.

上述難燃劑中，就樹脂密封成型時之熱硬化性樹脂薄片之變形性、對電子零件或被接著體之凹凸之追隨性、對電子零件或被接著體之密著性之觀點而言，宜使用有機系難燃劑，尤其較好使用磷腈系難燃劑。 In the above-mentioned flame retardant, the deformability of the thermosetting resin sheet at the time of resin sealing molding, the followability to the unevenness of the electronic component or the adherend, and the adhesion to the electronic component or the adherend are considered. It is preferable to use an organic flame retardant, and it is particularly preferable to use a phosphazene flame retardant.

又，環氧樹脂組成物除上述各成分以外亦可視需要適當調配以碳黑為代表之顏料等之其他添加劑。 Further, in addition to the above respective components, the epoxy resin composition may be appropriately blended with other additives such as pigments represented by carbon black.

(熱硬化性樹脂薄片之製作方法) (Method for producing thermosetting resin sheet)

以下說明熱硬化性樹脂薄片之製作方法。首先，藉由混合上述各成分而調製環氧樹脂組成物。混合方法若為可均勻分散混合各成分之方法即無特別限制。隨後，例如塗佈使各成分溶解或分散於有機溶劑等中之漆料而形成為薄片狀。或者，亦可藉由以直接捏合等混練各調配成分而調製混練物，且擠出如此獲得之混練物而形成為薄片狀。 Hereinafter, a method of producing a thermosetting resin sheet will be described. First, an epoxy resin composition is prepared by mixing the above components. The mixing method is not particularly limited as long as it can uniformly disperse and mix the components. Subsequently, for example, a paint which dissolves or disperses each component in an organic solvent or the like is applied to form a sheet. Alternatively, the kneaded product may be prepared by kneading each of the blending components by direct kneading or the like, and the kneaded material thus obtained may be extruded to form a sheet.

使用漆料具體之製作順序係依據常用方法適當混合上述A~E成分及視需要之其他添加劑，且均勻溶解或分散於有機溶劑中而調製漆料。接著，藉由將上述漆料塗佈於聚酯等支撐體上並乾燥，可獲得B-階段狀態之熱硬化性樹脂薄片11。而且亦可視需要貼合用於保護熱硬化性樹脂薄片表面之聚酯薄膜等之剝離薄片。剝離薄片係在密封時剝離。 The order in which the paint is used is specifically prepared by appropriately mixing the above components A to E and other additives as needed according to a usual method, and uniformly dissolving or dispersing in an organic solvent to prepare a paint. Then, the above-mentioned paint is applied onto a support such as polyester and dried to obtain a thermosetting resin sheet 11 in a B-stage state. Further, a release sheet such as a polyester film for protecting the surface of the thermosetting resin sheet may be attached as needed. The release sheet is peeled off at the time of sealing.

上述有機溶劑並無特別限制，可使用過去習知之各種有機溶劑，例如甲基乙基酮、丙酮、環己酮、二噁烷、二乙基酮、甲苯、乙酸乙酯等。該等可單獨使用，亦可併用2種以上。且通常，較好以使漆料之固體成分濃度成為30~60重量%之範圍之方式使用有機溶劑。 The organic solvent is not particularly limited, and various conventional organic solvents such as methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, ethyl acetate and the like can be used. These may be used alone or in combination of two or more. In general, it is preferred to use an organic solvent so that the solid content of the paint is in the range of 30 to 60% by weight.

有機溶劑乾燥後之薄片厚度並無特別限制，但就厚度均勻性與殘留溶劑量之觀點而言，通常較好設定 為5~100μm，更好為20~70μm。 The thickness of the sheet after drying the organic solvent is not particularly limited, but is generally preferably set in terms of thickness uniformity and residual solvent amount. It is 5 to 100 μm, more preferably 20 to 70 μm.

另一方面，使用混練時，係使用混練機等習 知之方法混合上述A~E成分及視需要之其他添加劑之各成分，隨後，藉由熔融混練而調製混練物。熔融混練之方法並無特別限制，但列舉為例如藉由混練輥、加壓式捏合機、擠出機等之習知混練機進行熔融混練之方法等。至於該等捏合機可適當地使用例如於軸方向之一部分具有螺旋葉片之自螺旋軸之突出量比其他部分之螺旋葉片自螺旋軸之突出量更小之部分的混練用螺旋，或具備於軸方向之一部分無螺旋葉片之混練用螺旋槳之捏合機。螺旋葉片之突出量小的部分或無螺旋葉片之部分成為低剪斷力且為低攪拌，藉此可排除因混練物之壓縮率高而混入之空氣，可抑制所得混練物中之氣孔發生。 On the other hand, when using kneading, a kneading machine is used. A method is known in which the components of the above A to E components and other additives as needed are mixed, and then the kneaded material is prepared by melt kneading. The method of melt-kneading is not particularly limited, and examples thereof include a method of performing melt-kneading by a conventional kneading machine such as a kneading roll, a pressure kneader, or an extruder. As for the kneading machine, for example, a kneading spiral having a spiral blade whose projection amount is smaller than that of other portions of the spiral blade from the screw shaft, or a shaft is provided, for example, in one of the axial directions One of the directions is a kneading machine for a mixing propeller without a spiral blade. The portion where the protruding amount of the spiral blade is small or the portion without the spiral blade becomes a low shearing force and is low agitation, thereby eliminating air which is mixed by the high compression ratio of the kneaded material, and suppressing generation of pores in the obtained kneaded material.

混練條件若溫度為上述各成分之軟化點以上 即無特別限制，例如為30~150℃，考慮環氧樹脂之熱硬化性時，較好為40~140℃，更好為60~120℃，時間為例如1~30分鐘，較好為5~15分鐘。藉此，可調製混練物。 Mixing conditions, if the temperature is above the softening point of each of the above components That is, it is not particularly limited, and is, for example, 30 to 150 ° C. When considering the thermosetting property of the epoxy resin, it is preferably 40 to 140 ° C, more preferably 60 to 120 ° C, and the time is, for example, 1 to 30 minutes, preferably 5 ~15 minutes. Thereby, the kneaded material can be modulated.

藉由擠出成型使所得混練物成形，可獲得B- 階段狀態之熱硬化性樹脂薄片11。具體而言，在不使熔融混練後之混練物冷卻而在高溫狀態直接擠出成形，可形成熱硬化性樹脂薄片11。該擠出方法並無特別限制，列舉為T模嘴擠出法、輥壓延法、輥混練法、共擠出法、軋光機成形法等。擠出溫度若在上述各成分之軟化點以上則無特別限制，但考慮環氧樹脂之熱硬化性及成形性時，為 例如40~150℃，較好為50~140℃，更好為70~120℃。藉由以上，可形成熱硬化性樹脂薄片11。 By forming the obtained kneaded material by extrusion molding, B- can be obtained. A thermosetting resin sheet 11 in a stage state. Specifically, the kneaded material after the melt kneading is cooled and directly extruded at a high temperature to form the thermosetting resin sheet 11 . The extrusion method is not particularly limited, and examples thereof include a T-die extrusion method, a roll calendering method, a roll kneading method, a co-extrusion method, and a calender molding method. The extrusion temperature is not particularly limited as long as it is at least the softening point of each of the above components, but when considering the thermosetting property and formability of the epoxy resin, For example, 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 to 120 ° C. According to the above, the thermosetting resin sheet 11 can be formed.

如此獲得之熱硬化性樹脂薄片亦可視需要以 成為期望厚度之方式層合使用。亦即，熱硬化性樹脂薄片可以單層構造使用，亦可以層合為2層以上之多層構造所成之層合體使用。 The thermosetting resin sheet thus obtained can also be optionally used It is laminated and used in such a manner as to have a desired thickness. In other words, the thermosetting resin sheet may be used in a single layer structure, or may be laminated in a laminate of two or more layers.

〔電子零件封裝之製造方法〕 [Method of Manufacturing Electronic Component Packaging]

接著，針對使用上述熱硬化性樹脂薄片之本實施形態之電子零件封裝之製造方法，邊參照圖2A~2E加以說明。圖2A~2E分別為模式性顯示本發明一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。第1實施形態係以熱硬化性樹脂薄片對搭載於基板上之半導體晶片進行樹脂密封而製作電子零件封裝。又，本實施形態係使用半導體晶片作為電子零件，且使用印刷配線基板作為被接著體，但亦可使用該等以外之要素。例如，可使用電容或感知裝置、發光元件、振盪元件等作為電子零件，使用導線架、膠帶承載體(tape carrier)等作為被接著體。且，亦可不使用被接著體，預先將電子零件暫時固定在暫時固定材上，且將該等進行樹脂密封。使用任一要素，均可利用電子零件之樹脂密封達成高度之保護。第1實施形態之電子零件封裝之製造方法適於覆晶型安裝基板之製造。 Next, a method of manufacturing the electronic component package of the present embodiment using the above-described thermosetting resin sheet will be described with reference to FIGS. 2A to 2E. 2A to 2E are cross-sectional views schematically showing one step of a method of manufacturing an electronic component package according to an embodiment of the present invention. In the first embodiment, the semiconductor wafer mounted on the substrate is resin-sealed with a thermosetting resin sheet to produce an electronic component package. Further, in the present embodiment, a semiconductor wafer is used as the electronic component, and a printed wiring substrate is used as the adherend, but elements other than these may be used. For example, a capacitor or a sensing device, a light-emitting element, an oscillating element, or the like can be used as the electronic component, and a lead frame, a tape carrier, or the like can be used as the adherend. Further, the electronic component may be temporarily fixed to the temporary fixing member without using the adherend, and the resin may be sealed. With either element, a high degree of protection can be achieved by using a resin seal of the electronic part. The method of manufacturing an electronic component package according to the first embodiment is suitable for the production of a flip chip mounting substrate.

(搭載半導體晶片之基板的準備步驟) (Preparation step of a substrate on which a semiconductor wafer is mounted)

搭載半導體晶片之基板的準備步驟係準備搭載有複數半導體晶片13之印刷配線基板12(參照圖2A)。半導體晶片13可藉由以習知方法切割形成有特定電路之半導體晶圓予以單片化而形成。半導體晶片13對於印刷配線基板12之搭載可使用覆晶黏結機或晶粒黏結機(die bonder)等之習知裝置。半導體晶片13與印刷配線基板12係透過凸塊等之突起電極13a電性連接。且，半導體晶片13與印刷配線基板12之間填充有用於緩和二者間之熱膨脹率差，尤其是用以防止連接部位之龜裂等發生之底部填充材14。底部填充材14只要使用習知者即可。底部填充材14之配置可藉由將半導體晶片13搭載於印刷配線基板12上之後，於二者間注入液狀之底部填充材14而進行，亦可藉由準備附薄片狀之底部填充材14之半導體晶片13或印刷配線基板12後，將半導體晶片13與印刷配線基板12連接而進行。 The preparation step of mounting the substrate of the semiconductor wafer is to prepare the printed wiring board 12 on which the plurality of semiconductor wafers 13 are mounted (see FIG. 2A). The semiconductor wafer 13 can be formed by dicing a semiconductor wafer formed with a specific circuit by a conventional method. As the semiconductor wafer 13 to be mounted on the printed wiring board 12, a conventional device such as a flip chip bonding machine or a die bonder can be used. The semiconductor wafer 13 and the printed wiring board 12 are electrically connected to each other through the bump electrodes 13a such as bumps. Further, the semiconductor wafer 13 and the printed wiring board 12 are filled with an underfill material 14 for relieving the difference in thermal expansion rate therebetween, particularly for preventing cracks or the like at the joint portion. The underfill material 14 may be any conventional one. The underfill 14 can be placed by mounting the semiconductor wafer 13 on the printed wiring board 12, and then injecting the liquid underfill material 14 therebetween, or by preparing the underfill material 14 in the form of a sheet. After the semiconductor wafer 13 or the printed wiring board 12 is printed, the semiconductor wafer 13 is connected to the printed wiring board 12.

(密封步驟) (sealing step)

密封步驟係以覆蓋半導體晶片13之方式將熱硬化性樹脂薄片11層合於印刷配線基板12上，以上述熱硬化性樹脂薄片樹脂密封半導體晶片13(參照圖2B)。該熱硬化性樹脂薄片11係作為用於保護半導體晶片13及其附加之要素免受外部環境影響之密封樹脂發揮功能。 In the sealing step, the thermosetting resin sheet 11 is laminated on the printed wiring board 12 so as to cover the semiconductor wafer 13, and the semiconductor wafer 13 is sealed with the thermosetting resin sheet resin (see FIG. 2B). This thermosetting resin sheet 11 functions as a sealing resin for protecting the semiconductor wafer 13 and its additional elements from the external environment.

熱硬化性樹脂薄片11之層合方法並無特別限 制，列舉為擠出成形用於形成熱硬化性樹脂薄片之樹脂組 成物的熔融混練物，將擠出成形物載置於印刷配線基板12上之後，藉由進行加壓一次進行熱硬化性樹脂薄片11之形成與層合的方法，或者將用於形成熱硬化性樹脂薄片11之樹脂組成物塗佈於脫模處理薄片上，使塗佈膜乾燥而形成熱硬化性樹脂薄片11後，將該熱硬化性樹脂薄片11轉印於印刷配線基板12上之方法等。 The lamination method of the thermosetting resin sheet 11 is not particularly limited A resin group for extrusion forming a thermosetting resin sheet After the melt-kneaded product of the product is placed on the printed wiring board 12, the method of forming and laminating the thermosetting resin sheet 11 is performed once by pressurization, or it is used for forming a heat-hardening. Method of applying a resin composition of the resin sheet 11 to a release-treated sheet, drying the coating film to form a thermosetting resin sheet 11, and transferring the thermosetting resin sheet 11 onto the printed wiring board 12 Wait.

本實施形態中，藉由採用上述熱硬化性樹脂 薄片11，可藉由對半導體晶片13之被覆而貼附於印刷配線基板12上之程度嵌埋半導體晶片13，而可提高半導體封裝之生產效率。該情況下，可利用熱加壓或積層機等之習知方法將熱硬化性樹脂薄片11層合於印刷配線基板12上。熱加壓條件之溫度為例如40~120℃，較好為50~100℃，壓力為例如50~2500kPa，較好為100~2000kPa，時間為例如0.3~10分鐘，較好為0.5~5分鐘。且，考慮熱硬化性樹脂薄片11對半導體晶片13及印刷配線基板12之密著性及追隨性之提高時，較好在減壓條件下(例如10~2000Pa)進行加壓。 In the present embodiment, the above thermosetting resin is used. The sheet 11 can embed the semiconductor wafer 13 to the extent that it is attached to the printed wiring board 12 by coating the semiconductor wafer 13, thereby improving the production efficiency of the semiconductor package. In this case, the thermosetting resin sheet 11 can be laminated on the printed wiring board 12 by a conventional method such as a hot press or a laminator. The temperature of the hot pressurization conditions is, for example, 40 to 120 ° C, preferably 50 to 100 ° C, and the pressure is, for example, 50 to 2500 kPa, preferably 100 to 2000 kPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. . When the adhesion between the semiconductor wafer 13 and the printed wiring board 12 and the followability of the thermosetting resin sheet 11 are improved, it is preferable to pressurize under reduced pressure conditions (for example, 10 to 2000 Pa).

熱硬化性樹脂薄片之平面視投影面積所占之 前述電子零件的平面視投影面積之比例只要是50%以上即可，較好為80%以上，更好為85%以上。藉由使電子零件之面積占有率成為上述範圍，可以高生產性且低成本製造電子零件封裝。又，面積占有率之上限較好為100%以下，但亦可為比其低之值(例如98%以下)。面積占有率為100%時，列舉為例如如第2實施形態所說明，藉由具 有與晶圓相同之平面視投影面積之熱硬化性樹脂薄片密封晶圓之樣態，但並不限於此，可列舉為電子零件與熱硬化性樹脂薄片之平面視投影面積相同之樣態。 The surface area of the thermosetting resin sheet is occupied by the projected area The ratio of the planar viewing area of the electronic component may be 50% or more, preferably 80% or more, more preferably 85% or more. By making the area occupation ratio of the electronic component into the above range, the electronic component package can be manufactured with high productivity and at low cost. Further, the upper limit of the area occupancy ratio is preferably 100% or less, but may be a value lower than the value (for example, 98% or less). When the area occupancy rate is 100%, for example, as described in the second embodiment, The thermosetting resin sheet having the same planar viewing area as the wafer is sealed with the wafer. However, the present invention is not limited thereto, and the electronic component and the thermosetting resin sheet have the same plan view area.

(密封體形成步驟) (sealing body forming step)

密封體形成步驟係熱硬化處理上述熱硬化性樹脂薄片而形成密封體15(參照圖2B)。熱硬化性樹脂薄片之熱硬化處理條件，作為加熱溫度較好為100℃至200℃，更好為120℃至180℃，作為加熱時間較好為10分鐘至180分鐘，更好為30分鐘至120分鐘，亦可視需要加壓。加壓時，較好採用0.1MPa至10MPa，更好採用0.5MPa至5MPa。 In the sealing body forming step, the thermosetting resin sheet is thermally cured to form a sealing body 15 (see FIG. 2B). The heat-hardening treatment condition of the thermosetting resin sheet is preferably from 100 ° C to 200 ° C, more preferably from 120 ° C to 180 ° C, as the heating time is preferably from 10 minutes to 180 minutes, more preferably from 30 minutes to For 120 minutes, it can also be pressurized as needed. When pressurizing, it is preferably from 0.1 MPa to 10 MPa, more preferably from 0.5 MPa to 5 MPa.

(研削步驟) (grinding step)

研削步驟係研削上述密封體15之表面形成研削體16(參照圖2C)。研削時，可如圖2C所示與熱硬化性樹脂薄片11一起研削半導體晶片13，亦可僅研削熱硬化性樹脂薄片11。研削只要使用習知之研削裝置進行即可。可適當地採用邊使鑽石切刀等研削切刀旋轉，邊對其送入密封體15而研削密封體表面，而形成具有特定厚度之研削體16之順序。 In the grinding step, the surface of the sealing body 15 is ground to form a grinding body 16 (see Fig. 2C). At the time of grinding, the semiconductor wafer 13 may be ground together with the thermosetting resin sheet 11 as shown in FIG. 2C, or only the thermosetting resin sheet 11 may be ground. Grinding can be carried out by using a conventional grinding device. It is possible to appropriately form the grinding body 16 having a specific thickness by rotating the grinding cutter such as a diamond cutter while rotating it into the sealing body 15 to grind the surface of the sealing body.

(凸塊形成步驟) (bump forming step)

接著，亦可在印刷配線基板12之與半導體晶片搭載 面相反側之面上進行形成凸塊17之凸塊加工(參照圖2D)。凸塊加工可藉焊料球或焊料鍍敷等習知方法進行。 凸塊之材質並無特別限制，列舉為例如錫-鉛系金屬材、錫-銀系金屬材、錫-銀-銅系金屬材、錫-鋅系金屬材、錫-鋅-鉍系金屬材等焊料類(合金)、或金系金屬材、銅系金屬材等。 Next, it can also be mounted on the printed wiring board 12 and the semiconductor wafer. The bump processing for forming the bumps 17 is performed on the surface opposite to the surface (refer to FIG. 2D). The bump processing can be performed by a conventional method such as solder ball or solder plating. The material of the bump is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, and a tin-zinc-bismuth metal material. Solder (alloy), gold metal, copper metal, etc.

(切割步驟) (cutting step)

接著，亦可進行由熱硬化性樹脂薄片11、印刷配線基板12、及半導體晶片13等之要素所成之研削體16之切割(參照圖2E)。藉此，可獲得以半導體晶片13為單位之電子模組18。切割通常利用過去習知之切割薄片固定上述研削體16後進行。切割部位之位置對準亦可使用直接照明或間接照明之圖像辨識而進行。 Then, cutting of the grinding body 16 made of elements such as the thermosetting resin sheet 11, the printed wiring board 12, and the semiconductor wafer 13 can be performed (see FIG. 2E). Thereby, the electronic module 18 in units of the semiconductor wafer 13 can be obtained. The cutting is usually carried out by fixing the above-mentioned grinding body 16 using a conventionally used cutting sheet. The alignment of the cutting locations can also be performed using image recognition of direct illumination or indirect illumination.

本步驟可採用例如進行切入到切割薄片之稱 為完全切割之切斷方式等。本步驟中使用之切割裝置並無特別限制，可使用過去習知者。 This step can be used, for example, to cut into the sliced sheet. It is a cutting method for complete cutting, and the like. The cutting device used in this step is not particularly limited, and those skilled in the past can be used.

又，在切割步驟後繼續進行研削體之擴張 時，該擴張可使用過去習知之擴張裝置進行。擴張裝置具有可透過切割環將切割片朝下方壓下之甜甜圈狀之外環，與直徑比外環小並支撐切割薄片之內環。藉由該擴張步驟，可防止鄰接之電子模組18彼此接觸及破損。 Also, continue the expansion of the grinding body after the cutting step This expansion can be carried out using conventionally known expansion devices. The expansion device has a doughnut-shaped outer ring that is slidable downwardly through the cutting ring, and an inner ring that is smaller in diameter than the outer ring and supports the cut sheet. By this expansion step, the adjacent electronic modules 18 can be prevented from coming into contact with each other and being damaged.

(基板安裝步驟) (substrate mounting step)

視需要，可進行將上述所得之電子模組18安裝於另一基板(未圖示)上之基板安裝步驟。電子模組18對基板之安裝可使用覆晶黏結機或晶粒黏結機等之習知裝置。 A substrate mounting step of mounting the electronic module 18 obtained above on another substrate (not shown) may be performed as needed. A conventional device such as a flip chip bonding machine or a die bonding machine can be used for mounting the electronic module 18 to the substrate.

〈第2實施形態〉 <Second embodiment>

接著，針對本發明一實施形態之第2實施形態加以說明。第1實施形態係針對適於覆晶型安裝基板之製造的製造方法加以說明，但第2實施形態係針對適於製造稱為所謂的扇入(Fan-in)型晶圓等級封裝(WLP)之電子零件封裝之製造的製造方法加以說明。圖3A~3E分別模式性顯示本發明另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。 Next, a second embodiment of an embodiment of the present invention will be described. The first embodiment describes a manufacturing method suitable for the manufacture of a flip-chip mounting substrate, but the second embodiment is suitable for manufacturing a so-called fan-in type wafer level package (WLP). A method of manufacturing the electronic component package will be described. 3A to 3E are each a cross-sectional view schematically showing a step of a method of manufacturing an electronic component package according to another embodiment of the present invention.

(半導體晶圓準備步驟) (Semiconductor wafer preparation step)

半導體晶圓29可於單面形成複數突起電極23a(參照圖3A)，亦可於半導體晶圓29之雙面形成突起電極(未圖示)。凸塊或導電材等之突起電極之材質並無特別限制，列舉為例如錫-鉛系金屬材、錫-銀系金屬材、錫-銀-銅系金屬材、錫-鋅系金屬材、錫-鋅-鉍系金屬材等焊料類(合金)、或金系金屬材、銅系金屬材等。突起電極之高度亦依據用途而定，一般為20~200μm左右。 The semiconductor wafer 29 can form a plurality of bump electrodes 23a (see FIG. 3A) on one surface, or a bump electrode (not shown) can be formed on both sides of the semiconductor wafer 29. The material of the bump electrode such as a bump or a conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, and tin. - Solder (alloy) such as zinc-lanthanum metal, or gold-based metal or copper-based metal. The height of the bump electrode is also determined depending on the application, and is generally about 20 to 200 μm.

於半導體晶圓29之兩面形成突起電極時，兩 面之突起電極彼此可電性連接，亦可未連接。突起電極彼此之電性連接列舉為稱為TSV形式之透過通孔之連接 等。 When bump electrodes are formed on both sides of the semiconductor wafer 29, two The protruding electrodes of the surface may be electrically connected to each other or may not be connected. The electrical connection between the protruding electrodes is exemplified by the connection of the through-vias in the form of TSV. Wait.

(密封步驟) (sealing step)

密封步驟係以覆蓋突起電極23a之方式將熱硬化性樹脂薄片21層合於半導體晶圓29上，以上述熱硬化性樹脂薄片樹脂密封半導體晶圓29之單面(參照圖3B)。該熱硬化性樹脂薄片21係作為用於保護半導體晶圓29及其附加之要素免於受外部環境影響之密封樹脂而發揮功能。熱硬化性樹脂薄片21對半導體晶圓29之層合方法可採用與第1實施形態相同之條件。 In the sealing step, the thermosetting resin sheet 21 is laminated on the semiconductor wafer 29 so as to cover the bump electrodes 23a, and one surface of the semiconductor wafer 29 is sealed with the thermosetting resin sheet resin (see FIG. 3B). The thermosetting resin sheet 21 functions as a sealing resin for protecting the semiconductor wafer 29 and its additional elements from the external environment. The method of laminating the thermosetting resin sheet 21 to the semiconductor wafer 29 can be carried out under the same conditions as those of the first embodiment.

(密封體形成步驟) (sealing body forming step)

密封體形成步驟係對上述熱硬化性樹脂薄片21施以熱硬化處理形成密封體25(參照圖3B)。熱硬化性樹脂薄片21之熱硬化處理條件可採用與第1實施形態相同之條件。 In the sealing body forming step, the thermosetting resin sheet 21 is thermally hardened to form a sealing body 25 (see FIG. 3B). The thermosetting treatment conditions of the thermosetting resin sheet 21 can be the same as those in the first embodiment.

(研削步驟) (grinding step)

研削步驟係研削上述密封體25之表面形成研削體26(參照圖3C)。研削時，可如圖3C所示以使突起電極23a露出之方式進行研削。研削只要使用習知之研削裝置進行即可。 In the grinding step, the surface of the sealing body 25 is ground to form a grinding body 26 (see Fig. 3C). At the time of grinding, as shown in Fig. 3C, the projection electrode 23a may be ground to be exposed. Grinding can be carried out by using a conventional grinding device.

(凸塊形成步驟) (bump forming step)

接著，亦可在所露出之突起電極23a上進行形成凸塊27之凸塊加工(參照圖3D)。凸塊加工方法及凸塊之材質可採用與第1實施形態相同者。 Next, bump processing for forming the bumps 27 may be performed on the exposed bump electrodes 23a (see FIG. 3D). The bump processing method and the material of the bump can be the same as in the first embodiment.

(切割步驟) (cutting step)

接著，亦可進行對由熱硬化性樹脂薄片21、半導體晶圓29及凸塊27等之要素所成之研削體26之切割(參照圖3E)。藉此，可以半導體晶片23為單位獲得電子模組28。切割方法可採用與第1實施形態相同之方法。 Then, the cutting body 26 formed of the thermosetting resin sheet 21, the semiconductor wafer 29, and the bump 27 may be cut (see FIG. 3E). Thereby, the electronic module 28 can be obtained in units of the semiconductor wafer 23. The cutting method can be the same as in the first embodiment.

(基板安裝步驟) (substrate mounting step)

視需要，可進行將上述所得之電子模組28安裝於另一基板(未圖示)之基板安裝步驟。電子模組28對基板之安裝可使用覆晶黏結機或晶粒黏結機等之習知裝置。 The substrate mounting step of mounting the electronic module 28 obtained above to another substrate (not shown) may be performed as needed. A conventional device such as a flip chip bonding machine or a die bonding machine can be used for mounting the electronic module 28 to the substrate.

〈第3實施形態〉 <Third embodiment>

以下，針對本發明一實施形態的第3實施形態加以說明。圖4A~4G分別模式性顯示本發明之又另一實施形態之電子零件封裝之製造方法之一步驟的剖面圖。第1實施形態中，係以熱硬化樹脂薄片對搭載於印刷配線基板上之半導體晶片進行樹脂密封，但第3實施形態係以將半導體晶片暫時固定於暫固定材上之狀態進行樹脂密封，而不為基板等之被接著體。該第3實施形態適於稱為所謂扇出(Fan-out)型晶圓等級封裝(WLP)之電子零件封裝之製 造。 Hereinafter, a third embodiment of an embodiment of the present invention will be described. 4A to 4G are each a cross-sectional view schematically showing one step of a method of manufacturing an electronic component package according to still another embodiment of the present invention. In the first embodiment, the semiconductor wafer mounted on the printed wiring board is resin-sealed with a thermosetting resin sheet. However, in the third embodiment, the semiconductor wafer is temporarily fixed to the temporary fixing material, and the resin is sealed. It is not a substrate to be bonded. This third embodiment is suitable for an electronic component package called a so-called fan-out type wafer level package (WLP). Made.

〔暫時固定材準備步驟〕 [temporary fixing material preparation step]

暫時固定材準備步驟係準備將熱膨脹性黏著劑層3a層合於支撐體3b上之暫時固定材3(參照圖4A)。又，亦可使用放射線硬化型黏著劑層代替熱膨脹性黏著劑層。本實施形態係針對具備熱膨脹性黏著劑層之暫時固定材3加以說明。 In the temporary fixing material preparation step, the temporary fixing material 3 in which the heat-expandable pressure-sensitive adhesive layer 3a is laminated on the support 3b is prepared (see FIG. 4A). Further, a radiation curable adhesive layer may be used instead of the heat-expandable adhesive layer. In the present embodiment, the temporary fixing member 3 having the heat-expandable pressure-sensitive adhesive layer will be described.

(熱膨脹性黏著劑層) (heat-expandable adhesive layer)

熱膨脹性黏著劑層3a可藉由包含聚合物成分與發泡劑之黏著劑組成物而形成。聚合物成分(尤其是基底聚合物)可較好地使用丙烯酸系聚合物(有時稱為「丙烯酸聚合物A」)。丙烯酸聚合物A列舉為使用(甲基)丙烯酸酯作為主單體成分者。前述(甲基)丙烯酸酯列舉為例如(甲基)丙烯酸烷酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等之烷基碳數1~30，尤其是碳數4~18之直鏈狀或分支鏈狀之烷酯等)及(甲基)丙烯酸環烷酯(例如，環戊酯、環己酯等)等。該等(甲基)丙烯酸酯可單獨使用或併用2種以上。 The heat-expandable pressure-sensitive adhesive layer 3a can be formed by an adhesive composition containing a polymer component and a foaming agent. An acrylic polymer (sometimes referred to as "acrylic polymer A") can be preferably used as the polymer component (especially the base polymer). The acrylic polymer A is exemplified by using (meth) acrylate as a main monomer component. The aforementioned (meth) acrylate is exemplified by, for example, an alkyl (meth) acrylate (for example, a methyl ester, an ethyl ester, a propyl ester, an isopropyl ester, a butyl ester, an isobutyl ester, a second butyl ester, a third butyl ester, Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl, tridecane The alkyl group having 1 to 30 alkyl groups such as ester, myristyl ester, cetyl ester, octadecyl ester and eicosyl ester, especially a linear or branched alkyl ester having 4 to 18 carbon atoms. And cycloalkyl (meth)acrylate (for example, cyclopentyl ester, cyclohexyl ester, etc.) and the like. These (meth) acrylates may be used alone or in combination of two or more.

又，前述丙烯酸聚合物A，以凝聚力、耐熱 性、交聯性等之改質為目的，亦可視需要含有對應於可與前述(甲基)丙烯酸酯共聚合之其他單體成分之單位。該種單體成分列舉為例如丙烯酸、甲基丙烯酸、衣康酸、馬來酸、富馬酸、巴豆酸、丙烯酸羧基乙酯等之含有羧基之單體；馬來酸酐、衣康酸酐等之含酸酐基之單體；(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸羥基丁酯等之含羥基之單體；(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺等之(N-取代或無取代)醯胺系單體；乙酸乙烯酯、丙酸乙烯酯等之乙烯酯系單體；苯乙烯、α-甲基苯乙烯等之苯乙烯系單體；乙烯基甲基醚、乙烯基乙基醚等之乙烯醚系單體；丙烯腈、甲基丙烯睛等之氰基丙烯酸酯系單體；(甲基)丙烯酸縮水甘油酯等之含環氧基之丙烯酸系單體；乙烯、丙烯、異戊二烯、丁二烯、異丁烯等之烯烴或二烯系單體；(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N-二甲基胺基乙酯、(甲基)丙烯酸第三丁胺基乙酯等之含有(取代或無取代)之胺基之單體；(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等之(甲基)丙烯酸烷氧基烷酯系單體；N-乙烯基吡咯啶酮、N-甲基乙烯基吡咯啶酮、N-乙烯基吡啶、N-乙烯基哌啶酮、N-乙烯基嘧啶、N-乙烯基哌啶、N-乙烯基哌嗪、N-乙烯基吡咯、N-乙烯基咪唑、N-乙烯基噁唑、N-乙烯基嗎啉、N-乙烯基己內醯胺等之具有含氮原子環之單體；N-乙 烯基羧酸醯胺類；苯乙烯磺酸、烯丙基磺酸、(甲基)丙烯醯丙磺酸、(甲基)丙烯酸磺基丙酯等之含有磺酸基之單體；2-羥基乙基丙烯醯基磷酸酯等之含有磷酸基之單體；N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺、N-月桂基馬來醯亞胺、N-苯基馬來醯亞胺等之馬來醯亞胺系單體；N-甲基衣康醯亞胺、N-乙基衣康醯亞胺、N-丁基衣康醯亞胺、N-辛基衣康醯亞胺、N-2-乙基己基衣康醯亞胺、N-環己基衣康醯亞胺、N-月桂基衣康醯亞胺等之衣康醯亞胺系單體；N-(甲基)丙烯醯氧基亞甲基丁二醯亞胺、N-(甲基)丙烯醯基-6-氧基六亞甲基丁二醯亞胺、N-(甲基)丙烯醯基-8-氧基八亞甲基丁二醯亞胺等之丁二醯亞胺系單體；(甲基)丙烯酸聚乙二醇、(甲基)丙烯酸聚丙二醇等之二醇系丙烯酸酯單體；(甲基)丙烯酸四氫糠酯等之含有含氧原子雜環之單體；氟系(甲基)丙烯酸酯等之含有氟原子之丙烯酸酯系單體；聚矽氧系(甲基)丙烯酸酯等之含有矽原子之丙烯酸酯系單體；己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、辛戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧基丙烯酸酯、聚酯丙烯酸酯、胺基甲酸酯丙烯酸酯、二乙烯基苯、丁基二(甲基)丙烯酸酯、己基二(甲基)丙烯酸酯等之多官能單體等。 Further, the aforementioned acrylic polymer A is cohesive and heat resistant For the purpose of modification of properties, crosslinkability, etc., it is also possible to contain units corresponding to other monomer components copolymerizable with the aforementioned (meth) acrylate. The monomer component is exemplified by a carboxyl group-containing monomer such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid or carboxyethyl acrylate; maleic anhydride, itaconic anhydride, etc. An acid group-containing monomer; a hydroxyl group-containing monomer such as hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate or hydroxybutyl (meth)acrylate; (meth)acrylamide, N , N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (methyl) propylene (N-substituted or unsubstituted) guanamine monomer such as decylamine; vinyl ester monomer such as vinyl acetate or vinyl propionate; styrene monomer such as styrene or α-methyl styrene a vinyl ether monomer such as vinyl methyl ether or vinyl ethyl ether; a cyanoacrylate monomer such as acrylonitrile or methacryl; and an epoxy resin such as glycidyl (meth)acrylate Acrylic monomer; olefin or diene monomer of ethylene, propylene, isoprene, butadiene, isobutylene, etc.; aminoethyl (meth) acrylate, (meth) propylene a monomer containing (substituted or unsubstituted) amine group such as N,N-dimethylaminoethyl ester or (3)butylaminoethyl (meth)acrylate; methoxyethyl (meth)acrylate (meth)acrylic acid alkoxyalkyl ester monomer such as ethoxyethyl (meth)acrylate; N-vinylpyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperidine, N-vinylpiperazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N- a monomer having a nitrogen atom-containing ring such as vinylmorpholine or N-vinyl caprolactam; N-B a sulfonic acid group-containing monomer such as styrene carboxylic acid decylamine; styrene sulfonic acid, allyl sulfonic acid, (meth) propylene sulfonic acid, sulfopropyl (meth) acrylate; a phosphate group-containing monomer such as hydroxyethyl acryloyl phosphatidyl phosphate; N-cyclohexylmaleimide, N-isopropylmaleimide, N-lauryl maleimide, N- a maleic imine monomer such as phenyl maleimide; N-methyl itaconimine, N-ethyl itaconimine, N-butyl itaconide, N- Anthraquinone-based monomer such as octyl ketamine, N-2-ethylhexyl ketimine, N-cyclohexyl ketimine, N-lauryl ketimine, etc. N-(methyl)propenyloxymethylenebutaneimine, N-(methyl)propenyl-6-oxyhexamethylenebutaneimine, N-(methyl) a butyl bis-imide monomer such as acrylonitrile-8-oxy octamethyl butyl sulfoximine; a diol system such as (meth)acrylic acid polyethylene glycol or (meth)acrylic acid polypropylene glycol Acrylate monomer; monomer containing a heterocyclic ring containing an oxygen atom such as tetrahydrofurfuryl (meth)acrylate; or a fluorine-based (meth) acrylate or the like Acryl-based monomer of atom; acrylate-based monomer containing ruthenium atom such as polyfluorene-based (meth) acrylate; hexanediol di(meth)acrylate, (poly)ethylene glycol di(a) Acrylate, (poly)propylene glycol di(meth)acrylate, octyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate , pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinyl benzene, butyl bis (methyl a polyfunctional monomer such as acrylate or hexyl di(meth)acrylate.

前述丙烯酸聚合物A可藉由使單一單體或2 種以上之單體混合物聚合而獲得。聚合可以溶液聚合(例如，自由基聚合、陰離子聚合、陽梨子聚合等)、乳化聚合、塊狀聚合、懸浮聚合、光聚合(例如，紫外線(UV)聚合等)等任何方式進行。 The aforementioned acrylic polymer A can be obtained by making a single monomer or 2 The above monomer mixture is obtained by polymerization. The polymerization can be carried out by any means such as solution polymerization (for example, radical polymerization, anionic polymerization, pear polymerization, etc.), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization, etc.).

丙烯酸聚合物A之重量平均分子量並無特別 限制，但較好為35萬~100萬，更好為45萬~80萬左右。 The weight average molecular weight of acrylic polymer A is not special Restrictions, but preferably 350,000 to 1 million, more preferably 450,000 to 800,000.

又，熱膨脹性黏著劑中亦可適當使用外部交 聯劑以調整黏著力。外部交聯方法之具體手段列舉為添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等之所謂交聯劑進行反應之方法。使用外部交聯劑時，其使用量係依據與應交聯之基底聚合物之平衡而定，進而係依據作為黏著劑之使用用途而適當決定。外部交聯劑之使用量一般相對於前述基底聚合物100重量份為20重量份以下(較好為0.1重量份~10重量份)。 Moreover, external heat transfer can also be suitably used in the heat-expandable adhesive. The agent is used to adjust the adhesion. A specific means of the external crosslinking method is a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent. When an external crosslinking agent is used, the amount thereof is determined depending on the balance with the base polymer to be crosslinked, and is appropriately determined depending on the use as the adhesive. The amount of the external crosslinking agent to be used is generally 20 parts by weight or less (preferably 0.1 parts by weight to 10 parts by weight) based on 100 parts by weight of the base polymer.

熱膨脹性黏著劑層3a係如前述含有用於賦予 熱膨脹性之發泡劑。因此，以在暫時固定材3之熱膨脹性黏著劑層3a上形成包含經研削之半導體晶片33之研削體36之狀態(參照圖4D)，在任意時點至少部分地加熱暫時固定材3，藉由使該經加熱之熱膨脹性黏著劑層3a之部分中所含之發泡劑發泡及/或膨脹，而使熱膨脹性黏著劑層3a之至少部分膨脹，且藉由該熱膨脹性黏著劑層3a之至少部分膨脹，使對應於該膨脹部分之黏著面(與研削體36之界面)變形為凹凸狀，而減少該熱膨脹性黏著劑 層3a與研削體36之接著面積，藉此，減少兩者間之接著力，而可自暫時固定材3剝離研削體36。 The heat-expandable pressure-sensitive adhesive layer 3a is contained as described above for imparting Thermal expansion foaming agent. Therefore, in a state in which the ground body 36 including the ground semiconductor wafer 33 is formed on the heat-expandable pressure-sensitive adhesive layer 3a of the temporary fixing member 3 (see FIG. 4D), the temporary fixing member 3 is at least partially heated at an arbitrary timing. The foaming agent contained in a portion of the heated heat-expandable pressure-sensitive adhesive layer 3a is foamed and/or expanded to at least partially expand the heat-expandable pressure-sensitive adhesive layer 3a, and the heat-expandable pressure-sensitive adhesive layer 3a At least partially expanding, deforming the adhesive surface (the interface with the grinding body 36) corresponding to the expanded portion into a concave-convex shape, and reducing the heat-expandable adhesive The bonding area between the layer 3a and the grinding body 36, whereby the adhesion between the two is reduced, and the grinding body 36 can be peeled off from the temporary fixing member 3.

(發泡體) (foam)

熱膨脹性黏著劑層3a中所用之發泡劑並無特別限制，可自習知之發泡劑適當選擇。發泡劑可單獨使用或組合2種以上使用。發泡劑可較好地使用熱膨脹性微小球。 The foaming agent used in the heat-expandable pressure-sensitive adhesive layer 3a is not particularly limited, and may be appropriately selected from conventional foaming agents. The foaming agents may be used singly or in combination of two or more. The heat-expandable microspheres can be preferably used as the foaming agent.

(熱膨脹性微小球) (heat-expandable microspheres)

熱膨脹性微小球並無特別限制，可由習知之熱膨脹性微小球(各種無機系熱膨脹性微小球，或有機系熱膨脹性微小球等)適當選擇。熱膨脹性微小球，就混合操作容易之觀點而言，可較好地使用經微膠囊化之發泡劑。作為此種熱膨脹性微小球，列舉為例如將異丁烷、丙烷、戊烷等之藉由加熱而容易氣化膨脹之物質內包於具有彈性之殼內而成之微小球等。前述殼大多情況係以熱熔融性物質或藉熱膨脹而破壞之物質形成。形成前述殼之物質列舉為例如偏氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏氯乙烯、聚碸等。 The heat-expandable microspheres are not particularly limited, and can be appropriately selected from conventional heat-expandable microspheres (all kinds of inorganic heat-expandable microspheres, or organic heat-expandable microspheres). The heat-expandable microspheres can preferably use a microencapsulated foaming agent from the viewpoint of easy mixing operation. The heat-expandable microspheres are, for example, microspheres obtained by encapsulating a material which is easily vaporized and expanded by heating, such as isobutane, propane or pentane, in an elastic shell. Most of the above-mentioned shells are formed by a hot-melt substance or a substance which is destroyed by thermal expansion. The substance forming the shell is exemplified by a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polyfluorene or the like.

熱膨脹性微小球可藉慣用方法，例如凝聚(coacervation)法、或界面聚合法等製造。又，熱膨脹性微小球可使用例如松本油脂製藥股份有限公司製之商品名「Matsumoto Microsphere」之系列(例如，商品名「Matsumoto Microsphere F30」、商品名「Matsumoto Microsphere F301D」、商品名「Matsumoto Microsphere F50D」、商品名「Matsumoto Microsphere F501D」、商品名「Matsumoto Microsphere F80SD」、商品名「Matsumoto Microsphere F80VSD」等)，此外亦可使用Expancel公司製之商品名「051DU」、商品名「053DU」、商品名「551DU」、商品名「551-20DU」、商品名「551-80DU」等市售品。 The heat-expandable microspheres can be produced by a conventional method such as a coacervation method or an interfacial polymerization method. In addition, for the heat-expandable microspheres, for example, the product name "Matsumoto Microsphere" manufactured by Matsumoto Oil & Fat Pharmaceutical Co., Ltd. (for example, the product name "Matsumoto Microsphere F30" and the trade name "Matsumoto" can be used. Microsphere F301D", trade name "Matsumoto Microsphere F50D", trade name "Matsumoto Microsphere F501D", trade name "Matsumoto Microsphere F80SD", trade name "Matsumoto Microsphere F80VSD", etc., and also available under the trade name "051DU" by Expancel A commercial item such as the product name "053DU", the product name "551DU", the product name "551-20DU", and the product name "551-80DU".

又，使用熱膨脹性微小球作為發泡劑時，該 熱膨脹性微小球之粒徑(平均粒徑)可依據熱膨脹性黏著劑層之厚度等適當選擇。熱膨脹性微小球之平均粒徑可選自例如100μm以下(較好80μm以下，更好1μm~50μm，尤其1μm~30μm)之範圍。又，熱膨脹性微小球之粒徑的調整可在熱膨脹性微小球之生成過程中進行，亦可在生成後，利用分級等手段進行。熱膨脹性微小球較好粒徑一致。 Moreover, when a heat-expandable microsphere is used as a foaming agent, The particle diameter (average particle diameter) of the heat-expandable microspheres can be appropriately selected depending on the thickness of the heat-expandable pressure-sensitive adhesive layer or the like. The average particle diameter of the heat-expandable microspheres may be selected, for example, from the range of 100 μm or less (preferably 80 μm or less, more preferably 1 μm to 50 μm, particularly 1 μm to 30 μm). Further, the adjustment of the particle diameter of the thermally expandable microspheres may be carried out during the formation of the thermally expandable microspheres, or may be carried out by means of classification or the like after the formation. The heat-expandable microspheres preferably have a uniform particle size.

(其他發泡劑) (other blowing agents)

本實施形態中，作為發泡劑亦可使用熱膨脹性微小球以外之發泡劑。該種發泡劑可適當地選擇使用各種無機系發泡劑或有機系發泡劑等之各種發泡劑。無機系發泡劑之代表例列舉為例如碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、氫氧化硼鈉、各種疊氮類等。 In the present embodiment, a foaming agent other than the heat-expandable microspheres may be used as the foaming agent. As the foaming agent, various foaming agents such as various inorganic foaming agents or organic foaming agents can be appropriately selected and used. Representative examples of the inorganic foaming agent are, for example, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, various azides, and the like.

且，有機系發泡劑之代表例列舉為例如水； 三氯單氟甲烷、二氯單氟甲烷等之氯氟化烷系化合物；偶 氮雙異丁腈、偶氮二醯胺、偶氮二甲酸鋇等之偶氮系化合物；對甲苯磺醯肼、二苯基碸-3,3’-二磺醯肼、4,4’-氧基雙(苯磺醯肼)、烯丙基雙(磺醯肼)等之醯肼系化合物；對-伸甲苯基磺醯基胺基脲、4,4’-氧基雙(苯磺醯基胺基脲)等之胺基脲系化合物；5-嗎啉基-1,2,3,4-硫雜三唑等之三唑系化合物；N,N’-二亞硝基五亞甲基四胺、N,N’-二甲基-N,N’-二亞硝基對苯二醯胺等之N-亞硝基系化合物等。 Further, a representative example of the organic foaming agent is exemplified by, for example, water; a chlorofluoroalkane compound such as trichloromonofluoromethane or dichloromonofluoromethane; An azo compound such as nitrogen bisisobutyronitrile, azodiamine or azodicarboxylate; p-toluenesulfonate, diphenylphosphonium-3,3'-disulfonium, 4,4'- Anthraquinone compounds such as oxybis(phenylsulfonate), allylbis(sulfonate), etc.; p-tolylsulfonylamino urea, 4,4'-oxybis(phenylsulfonate) Aminourea-based compound such as guanylurea); triazole-based compound such as 5-morpholinyl-1,2,3,4-thiatriazole; N,N'-dinitrosopentamethylene An N-nitroso compound such as a tetraamine, N,N'-dimethyl-N,N'-dinitroso-p-nonylamine or the like.

本實施形態為了藉加熱處理而有效且安定地 減低熱膨脹性黏著劑層之接著力，故較好為體積膨脹率高達5倍以上，其中以高達7倍以上，尤其以高達10倍以上之具有不破裂之適度強度的發泡劑。 This embodiment is effective and stable in order to perform heat treatment The adhesive force of the heat-expandable adhesive layer is reduced, so that the volume expansion ratio is preferably at most 5 times or more, and the foaming agent having a moderate strength of not breaking is up to 7 times or more, particularly up to 10 times or more.

發泡劑(熱膨脹性微小球等)之調配量係依 據熱膨脹性黏著劑層之膨脹倍率或接著力之降低性等適當設定，但一般相對於形成熱膨脹性黏著劑層之基底聚合物100重量份，為例如1重量份~150重量份(較好為10重量份~130重量份，更好為25重量份~100重量份)。 The amount of foaming agent (heat-expandable microspheres, etc.) The expansion ratio of the heat-expandable pressure-sensitive adhesive layer or the decrease in adhesion force is appropriately set, and is usually, for example, 1 part by weight to 150 parts by weight per 100 parts by weight of the base polymer forming the heat-expandable pressure-sensitive adhesive layer (preferably 10 parts by weight to 130 parts by weight, more preferably 25 parts by weight to 100 parts by weight).

本實施形態中，作為發泡劑可適當地使用發 泡起始溫度(熱膨脹起始溫度)(T0)為80℃~210℃之範圍者，較好為具有90℃~200℃(更好為95℃~200℃，最好為100℃~170℃)之發泡起始溫度者。發泡劑之發泡起始溫度低於80℃時，會有密封體乃至研削體製造時或使用時因熱使發泡劑發泡之情況，使作業性或生產性下降。另一方面，發泡劑之發泡起始溫度超過210℃時，暫時固定材 之支撐體或密封樹脂需要過度之耐熱性，就作業性、生產性或成本面而言欠佳。又，發泡劑之發泡起始溫度(T0)相當於熱膨脹性黏著劑層之發泡起始溫度(T0)。 In the present embodiment, as the foaming agent, a foaming initiation temperature (thermal expansion starting temperature) (T 0 ) of 80 ° C to 210 ° C can be suitably used, and it is preferably 90 ° C to 200 ° C (better). The foaming initiation temperature is from 95 ° C to 200 ° C, preferably from 100 ° C to 170 ° C. When the foaming initiation temperature of the foaming agent is less than 80° C., the foaming agent may be foamed by heat during the production of the sealing body or the grinding body or during use, and the workability or productivity may be deteriorated. On the other hand, when the foaming initiation temperature of the foaming agent exceeds 210 ° C, the support of the temporary fixing material or the sealing resin requires excessive heat resistance, which is not preferable in terms of workability, productivity, or cost. Further, the foaming starting temperature of the foaming agent (T 0) corresponds to the foaming starting temperature (T 0) thermally expandable adhesive layers.

又，使發泡劑發泡之方法(亦即，使熱膨脹 性黏著劑層熱膨脹之方法)可由習知之加熱發泡方法適當選擇並採用。 Further, a method of foaming a foaming agent (that is, heat expansion) The method of thermal expansion of the adhesive layer can be appropriately selected and employed by a conventional heat foaming method.

本實施形態中，熱膨脹性黏著劑層，就加熱 處理前之適度接著力與加熱處理後之接著力降低性之均衡的觀點而言，於不含發泡劑之形態的彈性率在23℃~150℃中宜較佳為5×104Pa~1×106Pa，更好為5×104Pa~8×105Pa，最好為5×104Pa~5×105Pa。熱膨脹性黏著劑層之不含發泡劑之形態的彈性率(溫度：23℃~150℃)未達5×104Pa時會有熱膨脹性差，剝離性下降之情況。且，熱膨脹性黏著劑層之不含發泡劑之形態的彈性率(溫度：23℃~150℃)大於1×106Pa時，會有初期接著性差之情況。 In the present embodiment, the heat-expandable pressure-sensitive adhesive layer has an elastic modulus of 23 ° C in a form containing no foaming agent from the viewpoint of the balance between the moderate adhesion force before the heat treatment and the pressure reduction after the heat treatment. It is preferably 5 × 10 4 Pa to 1 × 10 6 Pa, more preferably 5 × 10 4 Pa to 8 × 10 5 Pa, more preferably 5 × 10 4 Pa to 5 × 10 5 Pa at 150 °C. When the modulus of elasticity of the heat-expandable pressure-sensitive adhesive layer (temperature: 23 ° C to 150 ° C) is less than 5 × 10 4 Pa, the thermal expansion property is poor and the peelability is lowered. Further, when the elastic modulus (temperature: 23 ° C to 150 ° C) of the heat-expandable pressure-sensitive adhesive layer in the form of no foaming agent is more than 1 × 10 6 Pa, the initial adhesion may be poor.

又，不含發泡劑之形態的熱膨脹性黏著劑層 相當於藉黏著劑(不含發泡劑)形成之黏著劑層。據此，熱膨脹性黏著劑層之不含發泡劑之形態的彈性率可使用黏著劑(不含發泡劑)進行測定。又，熱膨脹性黏著劑層可藉由含可形成在23℃~150℃中之彈性率為5×104Pa~1×106Pa之黏著劑層之黏著劑與發泡劑之熱膨脹性黏著劑形成。 Further, the heat-expandable pressure-sensitive adhesive layer in the form of not containing a foaming agent corresponds to an adhesive layer formed by an adhesive (excluding a foaming agent). Accordingly, the modulus of elasticity of the heat-expandable pressure-sensitive adhesive layer in the form of no foaming agent can be measured using an adhesive (without a foaming agent). Further, the heat-expandable adhesive layer can be thermally expanded by an adhesive containing an adhesive layer capable of forming an elastic modulus of 5 × 10 4 Pa to 1 × 10 6 Pa at 23 ° C to 150 ° C and a foaming agent. The agent is formed.

熱膨脹性黏著劑層之不含發泡劑之形態的彈 性率係製作未添加發泡劑之形態的熱膨脹性黏著劑層(亦即，以不含發泡劑之黏著劑獲得之黏著劑層)(樣品)，使用Rheometric公司製之動態黏彈性測定裝置「ARES」，以樣品厚度：約1.5mm，7.9mm平行板之治具，以剪斷模式，頻率：1Hz、升溫速度：5℃/分鐘，應力：0.1%(23℃)、0.3%(150℃)進行測定，且係設為在23℃及150℃所得之剪斷儲存彈性率G’之值。 The modulus of elasticity of the heat-expandable pressure-sensitive adhesive layer in the form of a foam-free agent is a heat-expandable pressure-sensitive adhesive layer in a form in which no foaming agent is added (that is, an adhesive layer obtained by an adhesive containing no foaming agent). (Sample), using a dynamic viscoelasticity measuring device "ARES" manufactured by Rheometric Co., Ltd., with a sample thickness of about 1.5 mm. The fixture of 7.9mm parallel plate is measured in shear mode, frequency: 1Hz, heating rate: 5°C/min, stress: 0.1% (23°C), 0.3% (150°C), and is set at 23°C. And the shear storage elastic modulus G' obtained at 150 ° C.

熱膨脹性黏著劑層之彈性率可藉由調節黏著劑之基底聚合物之種類、交聯劑、添加劑等予以控制。 The elastic modulus of the heat-expandable adhesive layer can be controlled by adjusting the type of the base polymer of the adhesive, a crosslinking agent, an additive, and the like.

熱膨脹性黏著劑層之厚度並無特別限制，可依據接著力之減低性等適當選擇，例如為5μm~300μm(較好20μm~150μm)左右。但，使用熱膨脹性微小球作為發泡劑時，熱膨脹性黏著劑層之厚度較好比所含之熱膨脹性微小球之最大粒徑厚。熱膨脹性黏著劑層之厚度太薄時，會因熱膨脹性微小球之凹凸而損及表面平滑性，降低加熱前(未發泡狀態)之接著性。且，因加熱處理造成之熱膨脹性黏著劑層之變形度小，且接著力不易順利地降低。另一方面，熱膨脹性黏著劑層之厚度太厚時，因加熱處理造成之膨脹乃至發泡後，易於熱膨脹性黏著劑層產生凝聚破壞，而有於研削體36上發生糊料殘留之情況。 The thickness of the heat-expandable pressure-sensitive adhesive layer is not particularly limited, and may be appropriately selected depending on the reduction of the adhesion force, and is, for example, about 5 μm to 300 μm (preferably 20 μm to 150 μm). However, when a heat-expandable microsphere is used as the foaming agent, the thickness of the heat-expandable pressure-sensitive adhesive layer is preferably thicker than the maximum particle diameter of the heat-expandable microspheres contained. When the thickness of the heat-expandable pressure-sensitive adhesive layer is too thin, the surface smoothness is impaired by the unevenness of the thermally expandable microspheres, and the adhesion before heating (unfoamed state) is lowered. Further, the degree of deformation of the heat-expandable pressure-sensitive adhesive layer due to the heat treatment is small, and the adhesion force is not easily lowered smoothly. On the other hand, when the thickness of the heat-expandable pressure-sensitive adhesive layer is too thick, the heat-expandable pressure-sensitive adhesive layer is likely to be agglomerated and destroyed by the heat treatment, and the paste remains in the ground body 36.

又，熱膨脹性黏著劑層可為單層、多層之任一種。 Further, the heat-expandable pressure-sensitive adhesive layer may be either a single layer or a plurality of layers.

本實施形態中，熱膨脹性黏著劑層中亦可含各種添加劑(例如，著色劑、增黏劑、增量劑、填充劑、 黏著賦予劑、可塑劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑等)。 In the embodiment, the heat-expandable pressure-sensitive adhesive layer may further contain various additives (for example, a coloring agent, a tackifier, a bulking agent, a filler, Adhesive imparting agent, plasticizer, anti-aging agent, antioxidant, surfactant, cross-linking agent, etc.).

(支撐體) (support)

支撐體3b系成為暫時固定材3之強度母體的薄板狀構件。支撐體3b之材料只要考慮作業性或耐熱性適當選擇即可，例如SUS等之金屬材料、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸等塑膠材料等。該等中，就耐熱性或強度、再利用可能性等之觀點而言，較好為SUS板。 The support 3b is a thin plate-shaped member which becomes the strength mother of the temporary fixing material 3. The material of the support 3b may be appropriately selected in consideration of workability and heat resistance, for example, a metal material such as SUS, a plastic material such as polyimine, polyamidoximine, polyetheretherketone or polyether oxime. Among these, from the viewpoint of heat resistance, strength, possibility of recycling, and the like, a SUS plate is preferred.

支撐體3b之厚度可考慮目的強度或作業性適 當選擇，較好為100~5000μm，更好為300~2000μm。 The thickness of the support 3b can be considered in consideration of the purpose of strength or workability When selected, it is preferably from 100 to 5000 μm, more preferably from 300 to 2000 μm.

(暫時固定材之形成方法) (Method of forming temporary fixing materials)

暫時固定材3可藉由於支撐體3b上形成熱膨脹性黏著劑層3a而得。熱膨脹性黏著劑層可混合例如黏著劑(感壓接著劑)、發泡劑(熱膨脹性微小球等)、與視需要之溶劑或其他添加劑等，利用形成薄片狀層之慣用方法而形成。具體而言可例如藉由將含黏著劑、發泡劑(熱膨脹性微小球等)、及視需要之溶劑或其他添加劑之混合物塗佈於支撐體3b上之方法，將前述混合物塗佈於適當隔離材(剝離紙等)上形成熱膨脹性黏著劑層，且將其轉印(轉移固定)於支撐體3b上之方法等，而形成熱膨脹性黏著劑層。 The temporary fixing member 3 can be obtained by forming the heat-expandable adhesive layer 3a on the support 3b. The heat-expandable pressure-sensitive adhesive layer can be formed by mixing, for example, an adhesive (pressure-sensitive adhesive), a foaming agent (heat-expandable microspheres, etc.), a solvent or other additives as necessary, and a conventional method of forming a sheet-like layer. Specifically, for example, a coating mixture, a foaming agent (heat-expandable microspheres, etc.), and a mixture of a solvent or other additives as needed may be applied to the support 3b, and the mixture may be suitably applied. A heat-expandable pressure-sensitive adhesive layer is formed on a separator (release paper or the like) to form a heat-expandable pressure-sensitive adhesive layer, and is transferred (transferred and fixed) to the support 3b.

(熱膨脹性黏著劑層之熱膨脹方法) (The thermal expansion method of the heat-expandable adhesive layer)

本實施形態中，熱膨脹性黏著劑層可藉加熱而熱膨脹。至於加熱處理方法可利用例如加熱板、熱風乾燥機、近紅外線燈、空氣烘乾機等之適宜加熱手段進行。加熱處理時之加熱溫度若為熱膨脹性性黏著劑層中之發泡劑(熱膨脹性微小球等)之發泡起始溫度(熱膨脹起始溫度)以上即可，加熱處理之條件可依據因發泡體(熱膨脹性微小球等)之種類等所引起之接著面積之減少性、支撐體、含半導體晶片之研削體等之耐熱性、耐熱方法(熱容量、加熱手段等)等而適當設定。一般之加熱處理條件係溫度100℃~250℃歷時1秒~90秒(加熱板等)或5分鐘~15分鐘(熱風乾燥機等)。又，加熱處理可依據使用目的以適當階段進行。且，加熱處理時之熱源有時亦可使用紅外線燈或加熱水。 In the present embodiment, the heat-expandable pressure-sensitive adhesive layer can be thermally expanded by heating. The heat treatment method can be carried out by a suitable heating means such as a hot plate, a hot air dryer, a near infrared lamp, an air dryer or the like. The heating temperature in the heat treatment may be at least the foaming initiation temperature (thermal expansion initiation temperature) of the foaming agent (heat-expandable microspheres or the like) in the heat-expandable pressure-sensitive adhesive layer, and the heat treatment conditions may be based on the hair The reduction of the contact area due to the type of the bubble (heat-expandable microsphere or the like), the heat resistance of the support, the sintered body including the semiconductor wafer, the heat resistance method (heat capacity, heating means, etc.), and the like are appropriately set. The general heat treatment conditions are a temperature of 100 ° C to 250 ° C for 1 second to 90 seconds (heating plate, etc.) or 5 minutes to 15 minutes (hot air dryer, etc.). Further, the heat treatment can be carried out at an appropriate stage depending on the purpose of use. Further, an infrared lamp or heated water may be used as the heat source during the heat treatment.

(中間層) (middle layer)

本實施形態中，熱膨脹性黏著劑層3a與支撐體3b之間，基於提高密著力或提高加熱後之剝離性等目的，亦可設置中間層(未圖示)。其中，較好設置橡膠狀有機彈性中間層作為中間層。如此，藉由設置橡膠狀有機彈性中間層，於將半導體晶片33接著於暫時固定材3時(參照圖4A)，可使熱膨脹性黏著劑層3a之表面良好地追隨半導體晶片33之表面形狀，可增大接著面積，並且自暫時固 定材3加熱剝離研削加工後之研削體36時，可高度(精度佳)地控制熱膨脹性黏著劑層3a之加熱膨脹，可使熱膨脹性黏著劑層3a朝厚度方向優先且均勻地膨脹。 In the present embodiment, an intermediate layer (not shown) may be provided between the heat-expandable pressure-sensitive adhesive layer 3a and the support 3b for the purpose of improving the adhesion or improving the peelability after heating. Among them, a rubbery organic elastic intermediate layer is preferably provided as the intermediate layer. By providing the rubber-like organic elastic intermediate layer, when the semiconductor wafer 33 is attached to the temporary fixing member 3 (see FIG. 4A), the surface of the thermally expandable adhesive layer 3a can follow the surface shape of the semiconductor wafer 33 well. Can increase the area of the joint, and from the temporary solid When the fixing material 3 is heated and peeled off the grinding body 36 after the grinding process, the thermal expansion of the heat-expandable pressure-sensitive adhesive layer 3a can be controlled with high height (accuracy), and the heat-expandable pressure-sensitive adhesive layer 3a can be preferentially and uniformly expanded in the thickness direction.

又，橡膠狀有機彈性中間層可介隔於支撐體 3b之單面或兩面。 Moreover, the rubbery organic elastic intermediate layer can be separated from the support One or two sides of 3b.

橡膠狀有機彈性中間層較好係由例如基於 ASTM D-2240之D型Shore D型硬度為50以下，尤其為40以下之天然橡膠、合成橡膠或具有橡膠彈性之合成樹脂所形成。又，即使如聚氯乙烯等之本質為硬質系聚合物，亦可藉由與可塑劑或柔軟劑等調配劑組合而展現橡膠彈性。該組成物可亦使用作為前述橡膠狀有機彈性中間層之構成材料。 The rubbery organic elastic intermediate layer is preferably based on, for example, ASTM D-2240 D-Share D-type hardness is 50 or less, especially 40 or less natural rubber, synthetic rubber or rubber-elastic synthetic resin. Further, even if the nature of the polyvinyl chloride or the like is a hard polymer, the rubber elasticity can be exhibited by a combination with a compounding agent such as a plasticizer or a softener. This composition can also be used as a constituent material of the aforementioned rubber-like organic elastic intermediate layer.

橡膠狀有機彈性中間層可藉由例如將含前述 天然橡膠、合成橡膠或具有橡膠彈性之合成樹脂等之橡膠狀有機彈性層形成材之塗佈液塗佈於基材上之方式(塗佈法)、使由前述橡膠狀有機彈性層形成材所成之薄膜、或預先於1層以上之熱膨脹性黏著劑層上形成由前述橡膠狀有機彈性層形成材所成之層而成之層合薄膜與基材接著之方式(乾式積層法)，將含基材之構成材料之樹脂組成物與含前述橡膠狀有機彈性層形成材之樹脂組成物共擠出之方式(共擠出法)等之形成方法形成。 The rubbery organic elastic intermediate layer can be, for example, comprised by the foregoing A coating liquid of a rubber-like organic elastic layer forming material such as a natural rubber, a synthetic rubber or a synthetic resin having a rubber elasticity is applied to a substrate (coating method), and the rubber-like organic elastic layer forming material is used. a method of forming a laminated film obtained by forming a layer of the rubber-like organic elastic layer forming material on a heat-expandable pressure-sensitive adhesive layer of one or more layers and a substrate (dry laminated method), The resin composition containing the constituent material of the substrate is formed by a method of forming a method of co-extruding a resin composition containing the rubber-like organic elastic layer forming material (co-extrusion method).

又，橡膠狀有機彈性中間層亦可藉由以天然 橡膠或合成橡膠或具有橡膠彈性之合成樹脂作為主成分之黏著性物質形成，且，亦可藉由以該成分作為主體之發泡 薄膜等形成。發泡可利用慣用方法，例如以機械攪拌之方法、利用反應生成氣體之方法、使用發泡劑之方法、去除可溶性物質之方法、利用噴霧進行之方法、形成複合發泡體(syntactic Foam)之方法、燒結法等進行。 Also, the rubbery organic elastic intermediate layer can also be made natural Rubber or synthetic rubber or a rubber-elastic synthetic resin is formed as an adhesive substance as a main component, and foaming by using the component as a main component A film or the like is formed. The foaming can be carried out by a conventional method such as a method of mechanical stirring, a method of generating a gas by a reaction, a method of using a foaming agent, a method of removing a soluble substance, a method of using a spray, and a method of forming a synthetic foam (syntactic Foam). The method, the sintering method, and the like are carried out.

橡膠狀有機彈性中間層等之中間層厚度為例 如5μm~300μm，較好為20μm~150μm左右。又，中間層為例如橡膠狀有機彈性中間層時，橡膠狀有機彈性中間層之厚度太薄時，加熱發泡後無法形成3次元之構造變化，會有剝離性惡化之情況。 Example of the thickness of the intermediate layer of a rubber-like organic elastic intermediate layer or the like For example, it is 5 μm to 300 μm, preferably about 20 μm to 150 μm. Further, when the intermediate layer is, for example, a rubber-like organic elastic intermediate layer, when the thickness of the rubber-like organic elastic intermediate layer is too thin, the structural change of the third dimension cannot be formed after the heating and foaming, and the peeling property may be deteriorated.

橡膠狀有機彈性中間層等之中間層可為單 層，亦可以2層以上之層構成。 The intermediate layer of the rubbery organic elastic intermediate layer or the like may be a single The layer may also be composed of two or more layers.

又，在不損及暫時固定材之作用效果之範圍 內，中間層中亦可含各種添加劑(例如，著色劑、增黏劑、增量劑、填充劑、黏著賦予劑、可塑劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑等)。 Also, without damaging the effect of the temporary fixing material Inside, the intermediate layer may also contain various additives (for example, colorants, tackifiers, extenders, fillers, adhesion-imparting agents, plasticizers, anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.) .

(半導體晶片配置步驟) (Semiconductor wafer configuration step)

半導體晶片配置步驟係將複數的半導體晶片33配置於上述暫時固定材3上(參照圖4A)。半導體晶片33之配置可使用覆晶黏結機或晶粒黏結機等之習知裝置。 In the semiconductor wafer disposing step, a plurality of semiconductor wafers 33 are placed on the temporary fixing member 3 (see FIG. 4A). The arrangement of the semiconductor wafer 33 may be a conventional device such as a flip chip bonding machine or a die bonding machine.

半導體晶片33之配置佈局或配置數可依據暫 時固定材3之形狀或尺寸、目的之封裝生產數等而適當設定，例如可使之排列配置成複數列且複數行之矩陣狀。 The layout or configuration number of the semiconductor wafer 33 can be based on the temporary The shape and size of the fixing material 3, the number of package productions for the purpose, and the like are appropriately set, and for example, they may be arranged in a matrix and in a matrix of a plurality of rows.

(密封步驟) (sealing step)

密封步驟係以覆蓋複數的半導體晶片33之方式將熱硬化性樹脂薄片31層合於暫時固定材3上進行樹脂密封(參照圖4B)。熱硬化性樹脂薄片31層合於暫時固定材3上之方法可採用與第1實施形態相同之條件。 In the sealing step, the thermosetting resin sheet 31 is laminated on the temporary fixing member 3 so as to cover the plurality of semiconductor wafers 33, and resin sealing is performed (see FIG. 4B). The method of laminating the thermosetting resin sheet 31 on the temporary fixing material 3 can employ the same conditions as those of the first embodiment.

(密封體形成步驟) (sealing body forming step)

密封體形成步驟係對上述熱硬化性樹脂薄片31施以熱硬化處理形成密封體35(參照圖4B)。熱硬化性樹脂薄片31之熱硬化處理條件可採用與第1實施形態相同之條件。 In the sealing body forming step, the thermosetting resin sheet 31 is thermally hardened to form a sealing body 35 (see FIG. 4B). The thermosetting treatment conditions of the thermosetting resin sheet 31 can be the same as those in the first embodiment.

(研削步驟) (grinding step)

研削步驟係研削上述密封體35表面而形成研削體36(參照圖4C)。研削時可研削至如圖4C所示之使半導體晶片33露出。研削只要使用習知之研削裝置進行即可。 In the grinding step, the surface of the sealing body 35 is ground to form a grinding body 36 (see Fig. 4C). At the time of grinding, the semiconductor wafer 33 can be exposed as shown in Fig. 4C. Grinding can be carried out by using a conventional grinding device.

(熱膨脹性黏著劑層剝離步驟) (heat-expandable adhesive layer peeling step)

熱膨脹性黏著劑層剝離步驟係藉由加熱暫時固定材3使熱膨脹性黏著劑層3a熱膨脹，而進行熱膨脹性黏著劑層3a與研削體36之間之剝離(參照圖4D)。將熱膨脹性黏著劑層3a加熱使之熱膨脹並使其黏著力降低，可容易地進行熱膨脹性黏著劑層3a與研削體36之界面之剝離。至於熱膨脹條件可較好地採用上述之「熱膨脹性黏著 劑層之熱膨脹方法」欄之條件。 In the heat-expandable pressure-sensitive adhesive layer peeling step, the heat-expandable pressure-sensitive adhesive layer 3a is thermally expanded by heating the temporary fixing member 3, and peeling between the heat-expandable pressure-sensitive adhesive layer 3a and the workpiece 36 is performed (see FIG. 4D). The heat-expandable pressure-sensitive adhesive layer 3a is heated to thermally expand and lower the adhesive force, and the peeling of the interface between the heat-expandable pressure-sensitive adhesive layer 3a and the grinding body 36 can be easily performed. As for the thermal expansion condition, the above-mentioned "thermal expansion adhesive adhesion" can be preferably used. The conditions of the column of thermal expansion of the agent layer.

本步驟亦可在使半導體晶片33露出之狀態 下，於再配線形成步驟之前以電漿處理等清潔研削體36之表面。 This step can also expose the semiconductor wafer 33 Next, the surface of the ground body 36 is cleaned by plasma treatment or the like before the rewiring forming step.

(再配線形成步驟) (rewiring forming step)

本實施形態中較好進而包含再配線形成步驟。再配線形成步驟係在上述熱膨脹性黏著劑層3a剝離後，於研削體36上形成與上述露出之半導體晶片33連接之再配線39(參照圖4E)。 In the present embodiment, it is preferable to further include a rewiring forming step. In the rewiring forming step, after the heat-expandable pressure-sensitive adhesive layer 3a is peeled off, a rewiring 39 connected to the exposed semiconductor wafer 33 is formed on the grounding body 36 (see FIG. 4E).

再配線形成方法可藉由例如利用真空成膜法 等之習知方法於露出之半導體晶片33上形成金屬晶種層，且以半加成法等之習知方法形成再配線39。 The rewiring forming method can be performed, for example, by using a vacuum film forming method A conventional method of forming a metal seed layer on the exposed semiconductor wafer 33 and forming a rewiring 39 by a conventional method such as a semi-additive method.

此後，亦可於再配線39及研削體36上形成 聚亞胺或PBO等之絕緣層。 Thereafter, it can also be formed on the rewiring 39 and the grinding body 36. An insulating layer of polyimide or PBO.

(凸塊形成步驟) (bump forming step)

接著，亦可進行於再配線39上形成凸塊37之凸塊加工(參照圖4F)。凸塊加工可藉焊料球或焊料鍍敷等之習知方法進行。凸塊37之材質可較好地使用與第1實施形態相同者。 Next, bump processing for forming the bumps 37 on the rewiring 39 can be performed (see FIG. 4F). The bump processing can be performed by a conventional method such as solder ball or solder plating. The material of the bump 37 can be preferably used in the same manner as in the first embodiment.

(切割步驟) (cutting step)

最後，進行由半導體晶片33、熱硬化性樹脂薄片31 及再配線39等要素所組成之層合體之切割(參照圖4G)。藉此，可獲得將配線引出至晶片區域外側之電子零件模組38。切割方法可採用與第1實施形態相同之方法。 Finally, the semiconductor wafer 33 and the thermosetting resin sheet 31 are carried out. Cutting of a laminate composed of elements such as rewiring 39 (see Fig. 4G). Thereby, the electronic component module 38 that leads the wiring to the outside of the wafer area can be obtained. The cutting method can be the same as in the first embodiment.

〔實施例〕 [Examples]

以下，例示性詳細說明本發明之較佳實施例。但，該實施例所記載之材料或調配量等，只要無特別限定地記載，則不意指本發明範圍僅限定於該等者。且，以份表示意指重量份。 Hereinafter, preferred embodiments of the present invention are exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention, unless otherwise specified. And, in parts, means a part by weight.

〔實施例1〕 [Example 1] (熱硬化性樹脂薄片之製作) (Production of thermosetting resin sheet)

以混練機摻合以下成分，並以2軸混練機在120℃熔融混練2分鐘，接著自T模嘴擠出，藉此製作厚度500μm之擠出成形物。以平面視投影面積為17663mm2、平面視形狀為圓形之方式切割該擠出成形物，獲得熱硬化性樹脂薄片A。 The following components were blended in a kneading machine, and melt-kneaded at 120 ° C for 2 minutes in a 2-axis kneader, followed by extrusion from a T-die, thereby producing an extrusion molded product having a thickness of 500 μm. The extruded product was cut in such a manner that the projected area of the plane was 17663 mm 2 and the shape of the plane was circular, and the thermosetting resin sheet A was obtained.

〔實施例2〕 [Example 2] (熱硬化性樹脂薄片之製作) (Production of thermosetting resin sheet)

以混練機摻合以下成分，並以2軸混練機在120℃熔融混練2分鐘，接著自T模嘴擠出，藉此製作厚度500μm之擠出成形物。以平面視投影面積為17663mm2、平面視形狀為圓形之方式切割該擠出成形物，獲得熱硬化性樹脂薄片B。 The following components were blended in a kneading machine, and melt-kneaded at 120 ° C for 2 minutes in a 2-axis kneader, followed by extrusion from a T-die, thereby producing an extrusion molded product having a thickness of 500 μm. The extruded product was cut in such a manner that the projected area of the plane was 17663 mm 2 and the shape of the plane was circular, and the thermosetting resin sheet B was obtained.

(熱硬化前之熱硬化性樹脂薄片之彈性率測定) (Measurement of elastic modulus of thermosetting resin sheet before thermal curing)

針對所製作之熱硬化前之熱硬化性樹脂薄片(樣品)，使用TA儀器公司製之動態黏彈性測定裝置「ARES」，重疊樣品之厚度：約1.5mm，使用8mm平行板之治具，以剪斷模具，且以頻率：1Hz、升溫速度：10℃/分鐘，應力：5%(90℃~130℃)進行測定，求出在90℃~130℃之範圍所得之剪斷儲存彈性率G’之最小值及最大值。結果示於表1。 For the thermosetting resin sheet (sample) before thermosetting, a dynamic viscoelasticity measuring device "ARES" manufactured by TA Instruments Co., Ltd. was used, and the thickness of the overlap sample was about 1.5 mm. 8mm parallel plate fixture, to cut the mold, and the frequency: 1Hz, heating rate: 10 ° C / min, stress: 5% (90 ° C ~ 130 ° C) to determine the range of 90 ° C ~ 130 ° C The resulting shear stores the minimum and maximum values of the elastic modulus G'. The results are shown in Table 1.

(半導體封裝之製作) (Production of semiconductor package)

以下述黏合條件於BT基板上安裝以下規格之半導體晶片，製作半導體晶片安裝基板。 A semiconductor wafer of the following specifications was mounted on the BT substrate under the following bonding conditions to fabricate a semiconductor wafer mounting substrate.

〈半導體晶片〉 <Semiconductor wafer>

半導體晶片尺寸：7.3mm□(厚度400μm) Semiconductor wafer size: 7.3mm □ (thickness 400μm)

凸塊材質：Cu 30μm、Sn-Ag 15μm厚 Bump material: Cu 30μm, Sn-Ag 15μm thick

凸塊數：544凸塊 Number of bumps: 544 bumps

凸塊間距：50μm Bump pitch: 50μm

晶片數：16個(4個×4個) Number of wafers: 16 (4 x 4)

〈黏合條件〉 <Adhesion conditions>

裝置：Panasonic電工(股)製 Device: Panasonic Electrician (share) system

黏合條件：150℃、49N、10秒 Bonding conditions: 150 ° C, 49 N, 10 seconds

於以下所示之加熱加壓條件下，利用真空加壓將熱硬化性樹脂薄片A~B分別貼附於所得半導體晶片安裝基板上。此時之半導體晶片相對於熱硬化性樹脂薄片之面積占有率為55%。 The thermosetting resin sheets A to B were attached to the obtained semiconductor wafer mounting substrate by vacuum pressing under the conditions of heating and pressurization shown below. The area ratio of the semiconductor wafer to the thermosetting resin sheet at this time was 55%.

〈貼附條件〉 <attach condition>

溫度：90℃ Temperature: 90 ° C

加壓力：0.5MPa Pressure: 0.5MPa

真空度：2000Pa Vacuum degree: 2000Pa

加壓時間：3分鐘 Pressurization time: 3 minutes

開放至大氣壓後，於熱風乾燥機中，以180℃、1小時之條件使熱硬化性樹脂薄片熱硬化，獲得密封體。接著，藉由使用切削裝置(DISCO(股)製造，Surface Planar「DFS8910」)進行研削，使密封體薄化至半導體晶片合計厚度150μm為止，製作半導體封裝。 After opening to atmospheric pressure, the thermosetting resin sheet was thermally cured at 180 ° C for 1 hour in a hot air dryer to obtain a sealed body. Then, grinding was performed by using a cutting device (manufactured by DISCO, Surface Planar "DFS8910"), and the sealing body was thinned to a total thickness of the semiconductor wafer of 150 μm to fabricate a semiconductor package.

(半導體封裝之密封樹脂之剖面評價) (Sectional evaluation of sealing resin for semiconductor package)

利用電子顯微鏡(KEYENCE公司製，商品名「Digital Microscope」，200倍)，觀察半導體封裝之密封樹脂剖面中有無無機填充劑之偏向局部化，未確認到無機填充劑偏向局部化之情況評價為「○」，有確認到之情況評價為「×」。 The presence or absence of localization of the inorganic filler in the cross section of the sealing resin of the semiconductor package was observed by an electron microscope (manufactured by KEYENCE, "Digital Microscope", 200 times). The case where the inorganic filler was not locally localized was evaluated as "○". The case of confirmation is evaluated as "X".

如由表1所了解，實施例1及2中，以熱硬 化性樹脂薄片製作之半導體封裝未確認到無機填充劑之偏向局部化，可知可製作高品質之半導體封裝。 As understood from Table 1, in Examples 1 and 2, hot hard In the semiconductor package produced by the chemical resin sheet, the partialization of the inorganic filler was not confirmed, and it was found that a high-quality semiconductor package can be produced.

Claims (8)

一種熱硬化性樹脂薄片，其為B-階段狀態，其特徵為包含無機填充劑、環氧樹脂及酚樹脂，該無機填充劑之含量為80至90重量%(但不包含80重量%)，其平面視投影面積為17663mm2以上，且其熱硬化前之彈性率在90~130℃之溫度範圍中為2.5×103Pa以上、3×104Pa以下。 A thermosetting resin sheet which is in a B-stage state and is characterized by comprising an inorganic filler, an epoxy resin and a phenol resin, the inorganic filler being contained in an amount of 80 to 90% by weight (but not including 80% by weight), The projected area of the plane is 17663 mm 2 or more, and the elastic modulus before thermal hardening is 2.5×10 3 Pa or more and 3×10 4 Pa or less in the temperature range of 90 to 130° C. 如請求項1之熱硬化性樹脂薄片，其中，前述無機填充劑之平均粒徑為54μm以下。 The thermosetting resin sheet according to claim 1, wherein the inorganic filler has an average particle diameter of 54 μm or less. 如請求項1之熱硬化性樹脂薄片，其包含彈性體。 A thermosetting resin sheet according to claim 1, which comprises an elastomer. 一種熱硬化性樹脂薄片捲繞體，其特徵為將如請求項1之熱硬化性樹脂薄片的長條體捲取成捲狀。 A thermosetting resin sheet wound body characterized in that the elongated body of the thermosetting resin sheet of claim 1 is wound into a roll. 一種電子零件封裝之製造方法，其特徵為包含下述步驟：以覆蓋一或複數之電子零件之方式層合如請求項1之熱硬化性樹脂薄片於該電子零件上之層合步驟、及使前述熱硬化性樹脂薄片熱硬化形成封裝體之封裝體形成步驟，其中，於前述熱硬化性樹脂薄片之平面視投影面積所占的前述電子零件之平面視投影面積的比率為50%以上。 A method of manufacturing an electronic component package, comprising the steps of laminating a thermosetting resin sheet of claim 1 on the electronic component by covering one or more electronic components, and The thermosetting resin sheet is thermally cured to form a package forming step of the package, wherein a ratio of a planar view area of the electronic component occupied by a plane-viewing area of the thermosetting resin sheet is 50% or more. 如請求項5之電子零件封裝之製造方法，其中，藉由熱壓加工進行前述層合步驟。 The method of manufacturing an electronic component package according to claim 5, wherein the laminating step is performed by hot press processing. 如請求項5或6之電子零件封裝之製造方法，其 中，進而包含切割前述封裝體形成電子零件模組之切割步驟。 A method of manufacturing an electronic component package according to claim 5 or 6, The method further includes a cutting step of cutting the package to form an electronic component module. 如請求項5之電子零件封裝之製造方法，其中，前述電子零件為半導體晶片或半導體晶圓。 The method of manufacturing an electronic component package according to claim 5, wherein the electronic component is a semiconductor wafer or a semiconductor wafer.
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Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP6313165B2 (en) * 2014-08-29 2018-04-18 日東電工株式会社 Thermosetting sealing resin sheet, sealing sheet with separator, semiconductor device, and method for manufacturing semiconductor device
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JP6376927B2 (en) * 2014-09-30 2018-08-22 株式会社タムラ製作所 Black thermosetting resin composition and flexible substrate having a film obtained by curing the same
JP6735071B2 (en) * 2015-05-13 2020-08-05 日東電工株式会社 Sealing resin sheet
JP7203482B2 (en) * 2015-08-28 2023-01-13 株式会社レゾナック Electronic component device manufacturing method
JP2017135253A (en) * 2016-01-27 2017-08-03 オムロン株式会社 Light-emitting device and method of manufacturing the same
JP7070559B2 (en) 2017-04-28 2022-05-18 昭和電工マテリアルズ株式会社 Encapsulating film and encapsulation structure, and methods for manufacturing these
JP6803498B1 (en) * 2019-03-29 2020-12-23 三井化学東セロ株式会社 Manufacturing method of electronic device
US20240071781A1 (en) 2021-02-01 2024-02-29 Nagase Chemtex Corporation Method for sealing electronic component mounting substrate, and heat-curable sheet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512031B1 (en) * 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
TW201236116A (en) * 2010-12-03 2012-09-01 Shinetsu Chemical Co Wafer mold material and method for manufacturing semiconductor apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796648B2 (en) * 1999-04-15 2006-07-12 信越化学工業株式会社 Epoxy resin composition, and laminated film and semiconductor device using this epoxy resin composition
JP4754185B2 (en) * 2004-05-27 2011-08-24 リンテック株式会社 Semiconductor sealing resin sheet and semiconductor device manufacturing method using the same
JP2009084563A (en) * 2007-09-13 2009-04-23 Hitachi Chem Co Ltd Adhesive composition, film adhesive, adhesion sheet, and semiconductor device
JP5180162B2 (en) * 2009-08-05 2013-04-10 日東電工株式会社 Sheet-like epoxy resin composition for electronic component sealing, electronic component device assembly and electronic component device obtained thereby
JP5691244B2 (en) * 2010-05-26 2015-04-01 日立化成株式会社 Film adhesive, adhesive sheet and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512031B1 (en) * 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
TW201236116A (en) * 2010-12-03 2012-09-01 Shinetsu Chemical Co Wafer mold material and method for manufacturing semiconductor apparatus

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