TWI612669B - 薄膜半導體裝置 - Google Patents
薄膜半導體裝置 Download PDFInfo
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- TWI612669B TWI612669B TW102144753A TW102144753A TWI612669B TW I612669 B TWI612669 B TW I612669B TW 102144753 A TW102144753 A TW 102144753A TW 102144753 A TW102144753 A TW 102144753A TW I612669 B TWI612669 B TW I612669B
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- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910052725 zinc Chemical group 0.000 claims description 11
- 239000011701 zinc Chemical group 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 150000001450 anions Chemical class 0.000 claims description 6
- 150000001768 cations Chemical class 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 230000005264 electron capture Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 IGZO) Chemical class 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Thin Film Transistor (AREA)
Abstract
本發明大體上是有關於一種具有多個半導體層之薄膜半導體裝置。此些層可調整,使得費米能階及電中性能階在此些層中係不同的。藉由調整此些層,電子捕捉位置可選擇,使得薄膜半導體裝置具有高遷移率。在將參照TFT來進行說明之時,可理解的是,本發明具有更廣泛的應用,例如是任何的薄膜半導體裝置。
Description
本發明之實施例大體上是有關於一種具有多個半導體層之薄膜半導體,此些半導體層係設計以讓流動電子或電洞於一侷限區域中移動,此侷限區域係沿著此些層之間的介面形成。此侷限因而可用以增加半導體的霍爾遷移率(Hall mobility)。
目前對薄膜電晶體(thin film transistors,TFTs)之關注係特別高,因為此些裝置可用於液晶主動矩陣顯示器(liquid crystal active matrix displays,LCDs)之類的裝置中,液晶主動矩陣顯示器之類的裝置時常係應用在電腦及電視平板。LCDs可亦包括發光二極體(light emitting diodes,LEDs),例如是用於背光之有機發光二極體(organic light emitting diodes,OLEDs)。LEDs與OLEDs需要TFTs來進行控制以定址顯示畫面的活動。半導體的一種應用係在傳統中用於顯示器的薄膜電晶體。
藉由TFTs驅動的電流(也就是導通電流(on-current))係受限於通道材料(時常意指主動材料、半導體材料或半導體主動材料)及通道寬度與長度。此外,導通電壓(turn-on voltage)係決定於半導體層之通道區內的載子堆積,且臨界電壓(threshold voltage)
係在偏壓溫度加壓(bias temperature stress)或電流溫度加壓(current temperature stress)後偏移,而當半導體材料內的固定電荷飄移或電荷補捉於介面內時,載子堆積會改變。
做為半導體材料的矽具有其限制。非晶矽具有低遷移率。多晶矽雖然具有較非晶矽高之遷移率,但製造昂貴且必需進行退火製程。
因此,具有高遷移率但可以較低成本製造之TFT係在此領域中有需求,TFT係以半導體材料形成。
本發明大體上是有關於一種具有多個半導體層之薄膜半導體裝置。此些層可調整,使得費米能階及電中性能階在此些層中係不同的。藉由調整此些層,電子捕捉位置可選擇,使得薄膜半導體裝置具有高遷移率。在將參照TFT來進行說明之時,可理解的是,本發明具有更廣泛的應用,例如是任何的薄膜半導體裝置。。
於一實施例中,一種薄膜半導體裝置,包括一第一半導體層,具有一第一費米能階及一第一電中性能階;一第二半導體層,具有一第二費米能階及一第二電中性能階,第二費米能階相異於第一費米能階,第二電中性能階相異於第一電中能階;以及一第三半導體層,具有一第三費米能階及一第三電中性能階,第三費米能階等同於第一費米能階,第三電中性能階等同於第一電中能階。為了對本發明之上述及其他方面有更佳的瞭解,
下文特舉較佳實施例,並配合所附圖式,作詳細說明如下:
100‧‧‧腔體
102、202‧‧‧基板
104‧‧‧靶材
106‧‧‧基座
108‧‧‧舉栓
110‧‧‧接地帶
112‧‧‧致動器
114‧‧‧真空幫浦
116‧‧‧背板
118‧‧‧磁控管
120‧‧‧暗區遮蔽件
122‧‧‧腔體遮蔽件
124‧‧‧陽極
126‧‧‧氣體導引管
128‧‧‧耦接件
130‧‧‧架體
132‧‧‧氣體控制板
200‧‧‧薄膜電晶體
204‧‧‧閘極
206‧‧‧閘介電層
208A‧‧‧第一半導體層
208B‧‧‧第二半導體層
208C‧‧‧第三半導體層
210‧‧‧源極
212‧‧‧汲極
A‧‧‧箭頭
N、S‧‧‧磁極
X1、X2、X3‧‧‧半導體電子親和力
Y1、Y2、Y3‧‧‧費米能階
Y1、Y2、Y3‧‧‧電中性能階
為了可詳細地了解本發明上述之特性,簡要摘錄於上之本發明的更特有的說明可參照實施例,一些實施例係繪示於所附之圖式中。然而,值得注意的是,由於本發明可承認其他等效實施例,所附之圖式僅為本發明之代表性實施例,因此並非用以限制本發明之範圍。
第1圖繪示根據本發明一實施例之PVD之腔體的剖面圖。
第2A-2C圖繪示TFT 200在各種製造階段之剖面圖。
第3圖繪示根據一實施例之三個半導體層的費米及電中性能階係為相異之能帶圖。
第4圖繪示根據另一實施例之三個半導體層的費米及電中性能階係為相異之能帶圖。
第5圖繪示根據另一實施例之三個半導體層的費米及電中性能階係為相異之能帶圖。
第6圖繪示根據另一實施例之三個半導體層的費米及電中性能階係為相異之能帶圖。
為了便於了解,在可行之處,相同的參考編號係使用來表示通用於此些圖式之相同的元件。可預期的是,揭露於一實施例中之元件可在無需特別說明的情況下,有助益地使用於其
他實施例中。
本發明大體上是有關於一種具有多個半導體層之薄膜半導體裝置。此些層可調整,使得費米能階(Fermi level)及電中性能階(charge neutrality level)在此些層中係不同的。藉由調整此些層,電子捕捉位置可選擇,使得薄膜半導體裝置具有高遷移率。在將參照TFT來進行說明之時,可理解的是,本發明具有更廣泛的應用,例如是任何的薄膜半導體裝置。
本發明係說明性描述,且可用於PVD腔體中來處理大面積基板,例如是4300 PVD腔體,取自美商業凱科技股份有限公司(AKT®),其為位於加州聖塔克拉拉之應用材料公司(Applied Materials,Inc.,Santa Clara,California)之子公司。然而,應理解的是,濺鍍靶材在其他系統架構中具有效用,包括設置來處理大面積圓基板之系統與由其他製造商所生產之系統。
第1圖繪示根據本發明一實施例之PVD之腔體100的剖面圖。腔體100可藉由真空幫浦114來進行排氣。在腔體100中,基板102可相對於靶材104設置。基板可設置於腔體100中之基座(susceptor)106上。基座106可藉由致動器112來如同箭頭「A」所示的舉起或降低。基座106可舉起以抬升基板102至處理位置且降低使得基板102可從腔體100移除。當基座106位在較低位置中時,舉栓108舉起基板102至基座106上。接地帶110可在處理期間讓基座106接地。基座106可在處理期間抬升以有
助於均勻地沉積。
靶材104可包括一或多個靶材104。靶材104可藉由接合層接合於背板116。為了控制靶材104之溫度,冷卻通道可位於背板116中。一或多個磁控管118可設置在背板116後。磁控管118可以線性移動或二維路徑掃描過背板116。腔體之數個牆可藉由暗區遮蔽件(dark space shield)120與腔體遮蔽件122遮蔽而避免沉積。
為了有助於提供均勻之濺鍍沉積在整個基板102,陽極124可置於靶材104與基板102之間。於一實施例中,陽極124可為鍍有電弧噴塗鋁(arc sprayed aluminum)之已噴珠處理之不鏽鋼。於一實施例中,陽極124之一端可藉由架體130固定於腔體牆。陽極124在相對於靶材104處提供電荷,使得帶電離子將被吸引至此而不是一般為接地電位之腔體牆。藉由提供陽極124於靶材104與基板102之間,電漿可更為均勻,而有助於沉積。
對反應式濺鍍來說,提供反應氣體至腔體100內係有助益的。一或多個氣體導引管126可亦在靶材104和基板102之間橫跨整個腔體100的距離。氣體導引管126可導引濺鍍氣體,例如是惰性氣體或反應氣體,惰性氣體包括氬,反應氣體例如是氧或氮等。氣體可自氣體控制板132提供至氣體導引管126,氣體控制板132可導引一或多種氣體,例如是氬、氧、及氮。氣體導引管126可設置於低於一或多個陽極124之基板102與靶材
104之間的位置。陽極124可在處理期間遮蔽氣體導引管126來避免沉積。以陽極124遮蔽氣體導引管126可減少可能覆蓋或阻塞氣體排氣口之沉積總量。氣體導引管126可藉由一或多個耦接件128耦接於陽極124。
第2A-2C圖繪示TFT 200在各種製造階段之剖面圖。如第2A圖中所示,閘極204係形成於基板202上。可用於基板202之合適材料包括矽、鍺、矽鍺、鈉鈣玻璃(soda lime glass)、玻璃、半導體、塑膠、鋼或不鏽鋼基板,但不限於此些材料。可用於閘極204之合適材料包括鉻、銅、鋁、鉭、鈦、鉬、及其組合、或透明導電氧化物(transparent conductive oxides,TCO),但不限於此些材料,透明導電氧化物例如是通常用來做為透明電極之氧化銦錫(indium tin oxide,ITO)或摻雜氟的氧化鋅(fluorine doped zinc oxide,ZnO:F)。閘極204可藉由合適之沉積技術來進行沉積,例如是物理氣相沉積(PVD)、有機金屬化學氣相沉積(MOCVD)、旋塗製程(spin-on process)及印刷製程。閘極204可利用蝕刻製程來進行圖案化。
在閘極204上可沉積閘介電層206。可用於閘介電層206之合適材料包括二氧化矽、氮氧化矽、氮化矽、氧化鋁或其組合。閘介電層206可藉由合適的沉積技術進行沉積,合適的沉積技術包括電漿輔助化學氣相沉積(plasma enhanced chemical vapor deposition,PECVD)。
數個半導體層208A-208C可使用且接著形成在閘介
電層206上,如第2B圖中所示來做為一種形式之薄膜電晶體。實際應用中,半導體層208A-208C往往意指為通道層、主動層或半導體主動層。如第2C圖中所示,源極210及汲極212係形成在半導體層208A-208C上。源極210及汲極212間之半導體層208A-208C之暴露部分係做為主動通道214。可用於源極210及汲極212之合適材料包括鉻、銅、鋁、鉭、鈦、鉬、及其組合、或上述所提及之TCOs。源極210及汲極212可藉由合適的沉積技術形成,例如是PVD,接續PVD係為藉由蝕刻達成之圖案化。
半導體層208A-208C可包括氧、氮、及一或多個選自由鋅、鎵、鎘、銦、錫、及其組合所組成之群組的元素。於一實施例中,半導體層208A-208C可包括氧、氮、及一或多個具有已填滿之s軌域及已填滿之d軌域的元素。於另一實施例中,半導體層208A-208C可包括氧、氮、及一或多個具有已填滿之f軌域的元素。於另一實施例中,半導體層208A-208C可包括氧、氮、及一或多個二價元素。於另一實施例中,半導體層208A-208C可包括氧、氮、及一或多個三價元素。於另一實施例中,半導體層208A-208C可包括氧、氮、及一或多個四價元素。
半導體層208A-208C可亦包括摻雜物。可使用之適合之摻雜物包括Al、Sn、Ga、Ca、Si、Ti、Cu、Ge、In、Ni、Mn、Cr、V、Mg、SixNy、AlxOy、及SiC。摻雜物可亦為非金屬種類,例如是H、S、C等。於一實施例中,摻雜物包括鋁。於另一實施例中,摻雜物包括錫。
半導體層208A-208C之例子包括下述:ZnOxNy、SnOxNy、InOxNy、CdOxNy、GaOxNy、ZnSnOxNy、ZnInOxNy、ZnCdOxNy、ZnGaOxNy、SnInOxNy、SnCdOxNy、SnGaOxNy、InCdOxNy、InGaOxNy、CdGaOxNy、ZnSnInOxNy、ZnSnCdOxNy、ZnSnGaOxNy、ZnInCdOxNy、ZnInGaOxNy、ZnCdGaOxNy、SnInCdOxNy、SnInGaOxNy、SnCdGaOxNy、InCdGaOxNy、ZnSnInCdOxNy、ZnSnInGaOxNy、ZnInCdGaOxNy、及SnInCdGaOxNy。半導體層208A-208C之例子包括下述的摻雜材料:ZnOxNy:Al、ZnOxNy:Sn、SnOxNy:Al、InOxNy:Al、InOxNy:Sn、CdOxNy:Al、CdOxNy:Sn、GaOxNy:Al、GaOxNy:Sn、ZnSnOxNy:Al、ZnInOxNy:Al、ZnInOxNy:Sn、ZnCdOxNy:Al、ZnCdOxNy:Sn、ZnGaOxNy:Al、ZnGaOxNy:Sn、SnInOxNy:Al、SnCdOxNy:Al、SnGaOxNy:Al、InCdOxNy:Al、InCdOxNy:Sn、InGaOxNy:Al、InGaOxNy:Sn、CdGaOxNy:Al、CdGaOxNy:Sn、ZnSnInOxNy:Al、ZnSnCdOxNy:Al、ZnSnGaOxNy:Al、ZnInCdOxNy:Al、ZnInCdOxNy:Sn、ZnInGaOxNy:Al、ZnInGaOxNy:Sn、ZnCdGaOxNy:Al、ZnCdGaOxNy:Sn、SnInCdOxNy:Al、SnInGaOxNy:Al、SnCdGaOxNy:Al、InCdGaOxNy:Al、InCdGaOxNy:Sn、ZnSnInCdOxNy:Al、ZnSnInGaOxNy:Al、ZnInCdGaOxNy:Al、ZnInCdGaOxNy:Sn、及SnInCdGaOxNy:Al。
半導體層208A-208C可藉由濺鍍來沉積。於一實施例中,濺鍍靶材包括金屬,例如是鋅、鎵、錫、鎘、銦、或其組
合。濺鍍靶材可額外地包括摻雜物。含氧氣體及含氮氣體係引入到腔體中以藉由反應式濺鍍來沉積半導體層208A-208C。於一實施例中,含氮氣體包括N2。於另一實施例中,含氮氣體包括N2O、NH3、或其組合。於一實施例中,含氧氣體包括O2。於另一實施例中,含氧氣體包括N2O。含氮氣體之氮及含氧氣體之氧係與來自濺鍍靶材之金屬反應,以形成一半導體材料於基板上,半導體材料包括金屬、氧、氮、及選擇性的摻雜物。於一實施例中,含氮氣體及含氧氣體係為個別的氣體。於另一實施例中,含氮氣體及含氧氣體包括相同氣體。例如是B2H6、CO2、CO、CH4、及其組合之額外的添加劑可亦在濺鍍期間提供至腔體。
此外,半導體層208A-208C可包括多成分金屬氧化物(換言之,多陽離子金屬氧化物,例如是IGZO)、單一陽離子金屬氧化物(換言之,是氧化鋅)、或包含至少兩個陰離子及單一陽離子系統之多陰離子化合物。陽離子可為N、O、S、P、C、F、I、As、Se等。此外,半導體層208A-208C可選自例如是金屬氧化物或金屬氮化物之其他半導體材料。於一實施例中,半導體層208A包括一化合物,此化含物含括一單一之陽離子及數個陰離子,且此些陰離子之至多一者包括氮或氧。此外,陽離子係為過渡金屬。
各半導體層208A-208C可相異。或者,第一半導體層208A及第三半導體層208C可實質上一致,第二半導體層208B與其相異。舉例來說,此些層可在成分上相異。具有不同之半導
體層208A-208C係產生較高之遷移率。較高之遷移率可以石墨烯(graphene)及其他層狀半導體材料來達成。然而,藉由具有不同能隙、載子濃度或費米能階之氮氧化物半導體與金屬氧化物半導體的結合來使用量子侷限,可達到大於100之遷移率。
當電子係侷限在稱為量子井之峭谷(steep canyon)中時,電子在不與其他雜質碰撞的情況下可快速地移動。使用AlGaAs/GaAs結構之量子井係已知。然而,如此處所述,建立兩個不同之金屬氮氧化物或金屬氮化物或金屬氧化物或一金屬氮氧化物及其他半導體材料的異質接面(heterojunction)可產生量子井。藉由量子井的形成,可達成高遷移率來產生高遷移率TFTs及其他薄膜電子器件。來自金屬氮氧化物之膜可具有一或更多量子井以形成超晶格(superlattice)。
各半導體層208A-208C將具有各種特性來分別促成與其他層作用。各半導體層208A-208C將具有真空之能階(Ev)、傳導帶底部之能階(ECB)、電中性能階(ECNL)、費米能階(EF)、及價帶頂部之能階(EVB)。藉由控制費米能階及電中性能階,量子井可形成且遷移率可改善。
藉由控制費米能階,量子井的位置可預先選擇。如果有需要時,量子井可形成以讓流動電子沿著一侷限區域移動,侷限區域在此些層之介面的附近。或者,量子井可形成以推動第二半導體層208B中的電子。電子侷限係透過接觸之不同膜的成分劇變來達成。當電荷轉移跨過此些介面時,此侷限係產生,電
荷轉移跨過此些介面係由於費米能階之差異及電中性能階之差異的緣故。
第3圖繪示根據一實施例之一個TFT的三個半導體層的費米及電中性能階係為相異之能帶圖。如第3圖中所示,第一半導體層208A具有半導體電子親和力(semiconductor electron affinity)X1、費米能階Y1及電中性能階Z1。類似地,第二半導體層208B具有半導體電子親和力X2、費米能階Y2及電中性能階Z2。最後,第三半導體層208C具有半導體電子親和力X3、費米能階Y3及電中性能階Z3。如從第3圖可見,第一半導體層208A及第三半導體層208C具有實質上相同的半導體電子親和力、費米能階及電中性能階。此外,第二半導體層208B之費米能階係低於第一半導體層208A及第三半導體層208C之費米能階。就其意義而言,電子係從第一半導體層208A及第三半導體層208C推至第二半導體層208B。第二半導體層208B之電中性能階係高於第一半導體層208A及第三半導體層208C之電中性能階。因此,電子係從第二半導體層208B推至第一半導體層208A及第三半導體層208C。就其意義而言,藉由電中性能階而增強之正偶極係存在。正偶極意指電子係受限於第二半導體層208B中。
第4圖繪示根據另一實施例之一個TFT的三個半導體層的費米及電中性能階係為相異之能帶圖。如第4圖中所示,第一半導體層208A及第三半導體層208C具有實質上相同的半導體電子親和力、費米能階及電中性能階。此外,第二半導體層208B
之費米能階係低於第一半導體層208A及第三半導體層208C之費米能階。就其意義而言,電子係從第一半導體層208A及第三半導體層208C推至第二半導體層208B。第二半導體層208B之電中性能階係低於第一半導體層208A及第三半導體層208C之電中性能階。因此,電子係從第一半導體層208A及第三半導體層208C推至第二半導體層208B。就其意義而言,偶極係減少,使得電荷捕捉係少量且相對地沒有量子井存在,而不是在沒有電中性能階時會存在增強之正偶極。
第5圖繪示根據另一實施例之一個TFT的三個半導體層的費米及電中性能階係為相異之能帶圖。如第5圖中所示,第一半導體層208A及第三半導體層208C具有實質上相同的半導體電子親和力、費米能階及電中性能階。此外,第二半導體層208B之費米能階係高於第一半導體層208A及第三半導體層208C之費米能階。就其意義而言,電子係從第二半導體層208B推至第一半導體層208A及第三半導體層208C。第二半導體層208B之電中性能階係低於第一半導體層208A及第三半導體層208C之電中性能階。因此,電子係從第一半導體層208A及第三半導體層208C推至第二半導體層208B。就其意義而言,會在沒有電中性能階時存在的負/正偶極係增強,使得形成之量子井係增強且電子係限制於介面而不是在第二半導體層208B中。
第6圖繪示根據另一實施例之一個TFT的三個半導體層的費米及電中性能階係為相異之能帶圖。如第6圖中所示,
第一半導體層208A及第三半導體層208C具有實質上相同的半導體電子親和力、費米能階及電中性能階。此外,第二半導體層208B之費米能階係高於第一半導體層208A及第三半導體層208C之費米能階。就其意義而言,電子係從第二半導體層208B移動至第一半導體層208A及第三半導體層208C。第二半導體層208B之電中性能階係高於第一半導體層208A及第三半導體層208C之電中性能階。因此,電子係從第二半導體層208B推至第一半導體層208A及第三半導體層208C。就其意義而言,電中性能階係足以改變負偶極成正偶極,使得量子井增強在第二半導體層208B的電子侷限,而不是在沒有電中性能階時會存在有增強之負/正偶極。
如上所述,半導體層208A-208C可調整以置放量子井於需要的位置,使得量子井限制電子在第二半導體層208B中或第一半導體層208A及第三半導體層208C中。相異之費米及電中性能階可基於沉積條件或材料來達成。可預期的是,半導體層208A-208C可包括在不同沉積條件下形成之相同的半導體材料。舉例來說,全部之半導體層208A-208C可包括氮氧化鋅,然而,此些層可在不同條件下進行沉積,使得第二半導體層208B之費米及電中性能階相異於第一半導體層208A及第三半導體層208C之費米及電中性能階。或者,半導體層208A-208C可包括完全不同之材料。舉例來說,第二半導體層208B可包括氮氧化鋅,第一半導體層208A及第三半導體層208C包括氧化鋅。
無論如何,量子井之位置、及量子井之深度可影響遷移率。因此,藉由使用多層之半導體主動通道及調整材料及沉積條件,TFT之遷移率可增加。
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。
X1、X2、X3‧‧‧半導體電子親和力
Y1、Y2、Y3‧‧‧費米能階
Y1、Y2、Y3‧‧‧電中性能階
Claims (19)
- 一種薄膜半導體裝置,包括:一第一半導體層,具有一第一費米能階及一第一電中性能階;一第二半導體層,具有一第二費米能階及一第二電中性能階,該第二費米能階相異於該第一費米能階,該第二電中性能階相異於該第一電中能階;以及一第三半導體層,具有一第三費米能階及一第三電中性能階,該第三費米能階等同於該第一費米能階,該第三電中性能階等同於該第一電中能階。
- 如申請專利範圍第1項所述之薄膜半導體裝置,其中該第二費米能階大於該第一費米能階。
- 如申請專利範圍第2項所述之薄膜半導體裝置,其中該第二電中性能階大於該第一電中性能階。
- 如申請專利範圍第3項所述之薄膜半導體裝置,其中該第一半導體層包括一化合物,含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素。
- 如申請專利範圍第2項所述之薄膜半導體裝置,其中該第二電中性能階小於該第一電中性能階。
- 如申請專利範圍第5項所述之薄膜半導體裝置,其中該第一半導體層包括一化合物,含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素。
- 如申請專利範圍第1項所述之薄膜半導體裝置,其中該第二費米能階小於該第一費米能階。
- 如申請專利範圍第7項所述之薄膜半導體裝置,其中該第二電中性能階大於該第一電中性能階。
- 如申請專利範圍第8項所述之薄膜半導體裝置,其中該第一半導體層包括一化合物,含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素。
- 如申請專利範圍第7項所述之薄膜半導體裝置,其中該第二電中性能階小於該第一電中性能階。
- 如申請專利範圍第10項所述之薄膜半導體裝置,其中該第一半導體層包括一化合物,含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素。
- 如申請專利範圍第1項所述之薄膜半導體裝置,其中該第一半導體層包括含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素之一化合物。
- 如申請專利範圍第12項所述之薄膜半導體裝置,其中該第二半導體層包括含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素之一化合物。
- 如申請專利範圍第13項所述之薄膜半導體裝置,其中該第三半導體層包括含括氧、氮及一或複數個選自由銦、錫、鎵、鎘、及鋅所組成之群組的元素之一化合物。
- 如申請專利範圍第1項所述之薄膜半導體裝置,其中該 第一半導體層包括一化合物,含括一單一之陽離子及複數個陰離子,其中該些陰離子之至多一者包括氮或氧。
- 如申請專利範圍第15項所述之薄膜半導體裝置,其中該陽離子係為過渡金屬。
- 如申請專利範圍第16項所述之薄膜半導體裝置,其中該些陰離子包括氧、氮、碘、氟、硫、氯、及溴之至少一者。
- 如申請專利範圍第1項所述之薄膜半導體裝置,其中該薄膜半導體裝置包括一薄膜電晶體。
- 如申請專利範圍第18項所述之薄膜半導體裝置,其中該薄膜電晶體包括:一閘極,設置於一基板上;一閘介電層,設置於該閘極上;該第一半導體層,設置於該閘介電層上;該第二半導體層,設置於該第一半導體層上;該第三半導體層,設置於該第二半導體層上;一源極,設置於該第三半導體層上;以及一汲極,設置於該第三半導體層上。
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US20060026707A1 (en) * | 2000-07-17 | 2006-02-02 | Wisconsin Alumni Research Foundation | Polycomb genes from Maize-Mez1 and Mez2 |
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