TWI611484B - Electronic package structure and the manufacture thereof - Google Patents
Electronic package structure and the manufacture thereof Download PDFInfo
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- TWI611484B TWI611484B TW105127855A TW105127855A TWI611484B TW I611484 B TWI611484 B TW I611484B TW 105127855 A TW105127855 A TW 105127855A TW 105127855 A TW105127855 A TW 105127855A TW I611484 B TWI611484 B TW I611484B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
一種電子封裝結構之製法,係於承載件之相對兩側上設置複數電子元件並形成封裝層,使該封裝層包覆該些電子元件,再形成線路結構於該封裝層上,使該線路結構電性連接該些電子元件,藉由該承載件之相對兩側上均佈設有電子元件、封裝層與線路結構,而能平衡該承載件之兩側所受之應力,以防止該承載件發生翹曲。本發明復提供該電子封裝結構。 An electronic package structure is formed by disposing a plurality of electronic components on opposite sides of a carrier and forming an encapsulation layer, so that the encapsulation layer encapsulates the electronic components, and then forming a wiring structure on the encapsulation layer to make the circuit structure The electronic components are electrically connected, and the electronic components, the encapsulation layer and the circuit structure are uniformly disposed on opposite sides of the carrier, so that the stress on both sides of the carrier can be balanced to prevent the carrier from occurring. Warping. The present invention provides the electronic package structure.
Description
本發明係有關一種封裝技術,尤指一種具整版面之電子封裝結構及其製法。 The invention relates to a packaging technology, in particular to an electronic packaging structure with a full-page and a manufacturing method thereof.
隨著電子產業的蓬勃發展,電子產品也逐漸邁向多功能、高性能的趨勢。為了滿足電子封裝結構微型化(miniaturization)的封裝需求,係發展出晶圓級封裝(Wafer Level Packaging,簡稱WLP)或晶片級封裝(Chip Scale Package,簡稱CSP)的技術。 With the rapid development of the electronics industry, electronic products are gradually moving towards multi-functional and high-performance trends. In order to meet the packaging requirements of miniaturization of electronic package structures, technologies such as Wafer Level Packaging (WLP) or Chip Scale Package (CSP) have been developed.
第1A至1E圖係為習知晶片級封裝之半導體封裝件之製法之剖面示意圖。 1A to 1E are schematic cross-sectional views showing a method of fabricating a semiconductor package of a conventional wafer level package.
如第1A圖所示,形成一熱化離形膠層(thermal release tape)100於一如矽基板或有機板材之承載件10上。 As shown in FIG. 1A, a thermal release tape 100 is formed on a carrier 10 such as a substrate or an organic sheet.
接著,置放複數半導體元件11於該熱化離形膠層100上,該些半導體元件11具有相對之作用面11a與非作用面11b,各該作用面11a上均具有複數電極墊110,且各該作用面11a黏著於該熱化離形膠層100上。 Next, a plurality of semiconductor elements 11 are disposed on the thermal release layer 100, and the semiconductor elements 11 have opposing surfaces 11a and 11b, each of which has a plurality of electrode pads 110, and Each of the active surfaces 11a is adhered to the heated release layer 100.
如第1B圖所示,形成一封裝膠體14於該熱化離形膠層100上,以包覆該半導體元件11。 As shown in FIG. 1B, an encapsulant 14 is formed on the thermal release layer 100 to encapsulate the semiconductor element 11.
如第1C圖所示,烘烤該封裝膠體14以硬化該熱化離形膠層100,進而移除該熱化離形膠層100與該承載件10,而外露出該半導體元件11之作用面11a。 As shown in FIG. 1C, the encapsulant 14 is baked to harden the thermal release layer 100, thereby removing the thermal release layer 100 and the carrier 10, thereby exposing the semiconductor element 11 Face 11a.
如第1D圖所示,形成一線路結構16於該封裝膠體14與該半導體元件11之作用面11a上,令該線路結構16電性連接該電極墊110。接著,形成一絕緣保護層18於該線路結構16上,且該絕緣保護層18外露該線路結構16之部分表面,以供結合如銲球之導電元件17。 As shown in FIG. 1D, a wiring structure 16 is formed on the encapsulating body 14 and the active surface 11a of the semiconductor component 11, so that the wiring structure 16 is electrically connected to the electrode pad 110. Next, an insulating protective layer 18 is formed on the wiring structure 16, and the insulating protective layer 18 exposes a portion of the surface of the wiring structure 16 for bonding the conductive elements 17 such as solder balls.
如第1E圖所示,沿如第1D圖所示之切割路徑L進行切單製程,以獲取複數個晶片級封裝之半導體封裝件1。 As shown in FIG. 1E, a singulation process is performed along the dicing path L as shown in FIG. 1D to obtain a plurality of wafer-level package semiconductor packages 1.
惟,習知半導體封裝件1之製程中,該承載件10係為整版面(即量產尺寸),且該承載件10僅於一側上設置該半導體元件11,故於形成封裝膠體14時,該承載件10因與該封裝膠體14熱膨脹係數(Coefficient of thermal expansion,簡稱CTE)不匹配(mismatch)而容易發生熱應力不均勻之情況,致使熱循環(thermal cycle)時該承載件10產生翹曲(warpage),進而導致發生植球(即該導電元件17)掉落、該導電元件17不沾錫(non-wetting)等問題。 However, in the process of the conventional semiconductor package 1, the carrier 10 is a full-face (ie, mass-produced), and the carrier 10 is disposed on only one side of the semiconductor device 11, so that when the encapsulant 14 is formed The carrier 10 is prone to thermal stress non-uniformity due to mismatch with the coefficient of thermal expansion (CTE) of the encapsulant 14 , resulting in the carrier 10 being generated during thermal cycling. Warpage, which in turn causes problems such as the falling of the ball (i.e., the conductive member 17) and the non-wetting of the conductive member 17.
再者,翹曲的情況亦會造成製程中之結構無法放入機台中、或造成該半導體元件11發生碎裂而使產品良率降低。 Moreover, the warpage may also cause the structure in the process to be unable to be placed in the machine table, or the semiconductor element 11 may be chipped to lower the product yield.
另外,該承載件10僅於單一側形成該些半導體封裝件1,致使產能(Throughput)低,因而導致該半導體封裝件1之生產成本極高。 In addition, the carrier 10 forms the semiconductor packages 1 on only a single side, resulting in a low throughput, which results in an extremely high production cost of the semiconductor package 1.
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned prior art has become a problem that is currently being solved.
鑒於上述習知技術之缺失,本發明提供一種電子封裝結構,係包括複數封裝單元,且各該封裝單元係包含:封裝層,係具有相對之第一表面與第二表面;至少一電子元件,係嵌設於該封裝層中;以及線路結構,係形成於該封裝層之第一表面上且電性連接該電子元件。 In view of the above-mentioned deficiencies of the prior art, the present invention provides an electronic package structure including a plurality of package units, and each of the package units includes: an encapsulation layer having opposite first and second surfaces; at least one electronic component, Embedded in the encapsulation layer; and a wiring structure formed on the first surface of the encapsulation layer and electrically connected to the electronic component.
本發明復提供一種電子封裝結構之製法,係包括:提供一具有相對之第一側與第二側之承載件;設置複數電子元件於該承載件之第一側與第二側上,且形成封裝層於該承載件之第一側與第二側上,以令該封裝層包覆該些電子元件;以及形成線路結構於該封裝層上,且令該線結構部電性連接該些電子元件。 The invention provides a method for manufacturing an electronic package structure, comprising: providing a carrier having opposite first and second sides; and providing a plurality of electronic components on the first side and the second side of the carrier, and forming The encapsulation layer is on the first side and the second side of the carrier, so that the encapsulation layer covers the electronic components; and forming a wiring structure on the encapsulation layer, and electrically connecting the wire structure portions to the electronic components element.
前述之製法中,復包括於形成該線路結構後,移除該承載件。 In the foregoing method, the carrier is removed after forming the line structure.
前述之電子封裝結構及其製法中,該承載件之第二側上方之佈設構造係與該承載件之第一側上方之佈設構造相同。 In the foregoing electronic package structure and method of manufacturing the same, the layout structure above the second side of the carrier is the same as the layout above the first side of the carrier.
前述之電子封裝結構及其製法中,復包括形成複數導電元件於該線路結構上。 In the foregoing electronic package structure and method of fabricating the same, the complex includes forming a plurality of conductive elements on the line structure.
前述之電子封裝結構及其製法中,復包括形成複數導電柱於該封裝層中且電性連接該線路結構。 In the foregoing electronic package structure and method of manufacturing the same, the method further comprises forming a plurality of conductive pillars in the encapsulation layer and electrically connecting the wiring structure.
前述之電子封裝結構及其製法中,該電子元件具有相 對之作用面與非作用面,該作用面具有複數電極墊,該電極墊上係結合有導電體,且該導電體之端面係外露出該封裝層。 In the foregoing electronic package structure and method of manufacturing the same, the electronic component has a phase The working surface and the non-active surface have a plurality of electrode pads, and the electrode pads are combined with an electrical conductor, and the end faces of the electrical conductors expose the encapsulating layer.
由上可知,本發明之電子封裝結構及其製法,主要藉由該承載件之第一側與第二側上均佈設有電子元件、封裝層與線路結構,而能平衡該承載件之第一側與第二側所受之應力,故相較於習知技術,本發明能防止該承載件發生翹曲。 It can be seen from the above that the electronic package structure of the present invention and the manufacturing method thereof can balance the first part of the carrier by mainly distributing the electronic component, the encapsulation layer and the line structure on the first side and the second side of the carrier. The stress on the side and the second side is such that the present invention prevents warpage of the carrier compared to conventional techniques.
再者,本發明因可於該承載件之第一側與第二側上進行電子封裝件之製作,故相較於習知技術,本發明可提升其產能,因而能大幅降低製作成本。 Furthermore, in the present invention, since the electronic package can be fabricated on the first side and the second side of the carrier, the present invention can increase the throughput thereof compared with the prior art, thereby greatly reducing the manufacturing cost.
1‧‧‧半導體封裝件 1‧‧‧Semiconductor package
10‧‧‧承載件 10‧‧‧ Carrier
100‧‧‧熱化離形膠層 100‧‧‧heating release layer
11‧‧‧半導體元件 11‧‧‧Semiconductor components
11a,21a‧‧‧作用面 11a, 21a‧‧‧ action surface
11b,21b‧‧‧非作用面 11b, 21b‧‧‧ non-active surface
110,210‧‧‧電極墊 110,210‧‧‧electrode pads
14‧‧‧封裝膠體 14‧‧‧Package colloid
16‧‧‧線路結構 16‧‧‧Line structure
17,27‧‧‧導電元件 17,27‧‧‧Conducting components
18‧‧‧絕緣保護層 18‧‧‧Insulating protective layer
2,3‧‧‧電子封裝結構 2,3‧‧‧Electronic package structure
2a,3a‧‧‧電子封裝件 2a, 3a‧‧‧electronic package
20‧‧‧承載件 20‧‧‧Carrier
20a‧‧‧第一側 20a‧‧‧ first side
20b‧‧‧第二側 20b‧‧‧ second side
200‧‧‧金屬層 200‧‧‧ metal layer
21‧‧‧電子元件 21‧‧‧Electronic components
212‧‧‧導電體 212‧‧‧Electric conductor
214‧‧‧結合層 214‧‧‧Combination layer
24‧‧‧封裝層 24‧‧‧Encapsulation layer
24a‧‧‧第一表面 24a‧‧‧ first surface
24b‧‧‧第二表面 24b‧‧‧second surface
26‧‧‧線路結構 26‧‧‧Line structure
260,260’‧‧‧絕緣層 260,260'‧‧‧Insulation
261‧‧‧線路重佈層 261‧‧‧Line redistribution
270‧‧‧凸塊底下金屬層 270‧‧‧ Metal layer under the bump
33‧‧‧導電柱 33‧‧‧conductive column
A‧‧‧封裝單元 A‧‧‧Package unit
X‧‧‧假想界線 X‧‧‧ imaginary boundary
L‧‧‧切割路徑 L‧‧‧ cutting path
第1A至1E圖係為習知半導體封裝件之製法之剖面示意圖;第2A至2F圖係為本發明之電子封裝結構之製法之第一實施例的剖面示意圖,其中,第2F’圖係為對應第2F圖進行切單製程之剖面示意圖;以及第3A至3B圖係為本發明之電子封裝結構之製法之第二實施利的剖面示意圖。 1A to 1E are schematic cross-sectional views showing a method of fabricating a conventional semiconductor package; and FIGS. 2A to 2F are cross-sectional views showing a first embodiment of the method for fabricating an electronic package structure of the present invention, wherein the 2F' is a FIG. 3A to FIG. 3B are schematic cross-sectional views showing a second embodiment of the electronic package structure of the present invention. FIG.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小 等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, proportion and size depicted in the drawings of this specification And the like, which are used for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the invention, and thus do not have technical significance, any structural modification, The change of the proportional relationship or the adjustment of the size should be within the scope of the technical content disclosed by the present invention without affecting the effects and the achievable effects of the present invention. In the meantime, the terms "upper" and "one" as used in the specification are for convenience of description and are not intended to limit the scope of the invention, and the relative relationship may be changed or adjusted. Without substantial changes to the technical content, it is also considered to be within the scope of the invention.
第2A至2F圖係為本發明之電子封裝結構2之製法之第一實施例的剖面示意圖。 2A to 2F are schematic cross-sectional views showing a first embodiment of the manufacturing method of the electronic package structure 2 of the present invention.
如第2A圖所示,提供一具有相對之第一側20a與第二側20b的承載件20,其可選擇於該第一側20a與第二側20b上設有金屬層200。接著,於該第一側20a上設置複數電子元件21,再形成一封裝層24於該第一側20a上,以令該封裝層24包覆該電子元件21。 As shown in FIG. 2A, a carrier 20 having an opposite first side 20a and a second side 20b is provided, which may be optionally provided with a metal layer 200 on the first side 20a and the second side 20b. Then, a plurality of electronic components 21 are disposed on the first side 20a, and an encapsulation layer 24 is formed on the first side 20a to encapsulate the electronic component 21.
於本實施例中,該承載件20係為整版面(即量產尺寸),且該承載件20係為絕緣板材,其上可塗佈形成有一離型層(圖略),使該承載件20與該金屬層200之間設有該離型層。 In this embodiment, the carrier 20 is a full-face (ie, mass production size), and the carrier 20 is an insulating plate, and a release layer (not shown) can be coated thereon to make the carrier The release layer is provided between the metal layer 200 and the metal layer 200.
再者,該電子元件21係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於本實施例中,該電子元件21 係為半導體晶片,其具有相對之作用面21a與非作用面21b,該電子元件21係以其非作用面21b藉由一結合層214黏固於該第一側20a上,而該作用面21a具有複數電極墊210,且於該電極墊210上係結合並電性連接複數導電體212。具體地,該導電體212係為如銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。 Furthermore, the electronic component 21 is an active component, a passive component or a combination thereof, and the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor. In this embodiment, the electronic component 21 The semiconductor wafer has an opposite active surface 21a and an inactive surface 21b. The electronic component 21 is adhered to the first side 20a by a bonding layer 214, and the active surface 21a is adhered to the first side 20a. A plurality of electrode pads 210 are disposed, and the plurality of electrical conductors 212 are electrically coupled to the electrode pads 210. Specifically, the conductor 212 is a ball shape such as a solder ball, or a columnar shape of a metal material such as a copper post or a solder bump, or a stud made by a wire bonding machine, but is not limited thereto.
又,該封裝層24係為絕緣材,如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該第一側20a上。 Moreover, the encapsulation layer 24 is an insulating material, such as an encapsulant of epoxy resin, which may be formed on the first side 20a by lamination or molding.
另外,該封裝層24具有相對之第一表面24a與第二表面24b,其以該第二表面24b結合至該第一側20a上。 Additionally, the encapsulation layer 24 has opposing first and second surfaces 24a, 24b joined to the first side 20a by the second surface 24b.
如第2B圖所示,於該承載件20之第二側20b上設置複數電子元件21,再形成一封裝層24於該第二側20b上,以令該封裝層24包覆該些電子元件21。 As shown in FIG. 2B, a plurality of electronic components 21 are disposed on the second side 20b of the carrier 20, and an encapsulation layer 24 is formed on the second side 20b to allow the encapsulation layer 24 to encapsulate the electronic components. twenty one.
於本實施例中,係先於該第一側20a上設置該些電子元件21與該封裝層24,再於該第二側20b上設置該些電子元件21與該封裝層24。於另一實施例中,亦可於該承載件20之第一側20a與第二側20b上均設置該些電子元件21後,再形成該封裝層24於該承載件20之第一側20a與第二側20b上。 In the embodiment, the electronic components 21 and the encapsulation layer 24 are disposed on the first side 20a, and the electronic components 21 and the encapsulation layer 24 are disposed on the second side 20b. In another embodiment, after the electronic components 21 are disposed on the first side 20a and the second side 20b of the carrier 20, the encapsulation layer 24 is formed on the first side 20a of the carrier 20. With the second side 20b.
如第2C圖所示,藉由整平製程,令該封裝層24之第一表面24a齊平該導電體212之表面,使該導電體212之端面外露於該封裝層24之第一表面24a。 As shown in FIG. 2C, the first surface 24a of the encapsulation layer 24 is flushed with the surface of the conductor 212 by the leveling process, so that the end surface of the conductor 212 is exposed on the first surface 24a of the encapsulation layer 24. .
於本實施例中,該整平製程係藉由研磨方式,移除該封裝層24之部分材質(依需求,亦可移除該導電體212之部分材質)。 In this embodiment, the leveling process removes a portion of the material of the encapsulation layer 24 by grinding (a portion of the material of the conductor 212 may also be removed as needed).
應可理解地,亦可於形成該封裝層24時,該導電體212即外露於該該封裝層24,則無需進行整平製程。 It should be understood that, when the encapsulation layer 24 is formed, the electrical conductor 212 is exposed to the encapsulation layer 24, and no flattening process is required.
如第2D圖所示,形成一線路結構26於該封裝層24之第一表面24a上,且該線路結構26電性連接該些導電體212。 As shown in FIG. 2D, a wiring structure 26 is formed on the first surface 24a of the encapsulation layer 24, and the wiring structure 26 is electrically connected to the electrical conductors 212.
於本實施例中,該線路結構26係包括複數絕緣層260,260’、及設於該絕緣層260,260’上並電性連接該些導電體212之線路重佈層(redistribution layer,簡稱RDL)261,且最外層之絕緣層260’可作為防銲層,以令最外層之線路重佈層261部分表面外露於該防銲層。或者,該線路結構26亦可僅包括單一絕緣層260及單一線路重佈層261。 In this embodiment, the circuit structure 26 includes a plurality of insulating layers 260, 260', and a redistribution layer (RDL) 261 disposed on the insulating layers 260, 260' and electrically connected to the electrical conductors 212. The outermost insulating layer 260' can serve as a solder resist layer to expose a portion of the surface of the outermost layer redistribution layer 261 to the solder resist layer. Alternatively, the line structure 26 may also include only a single insulating layer 260 and a single line redistribution layer 261.
再者,形成該線路重佈層261之材質係為銅,且形成該絕緣層260,260’之材質係為如聚對二唑苯(PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)之介電材或如綠漆之防銲材。 Furthermore, the material forming the circuit redistribution layer 261 is copper, and the material of the insulating layer 260, 260' is formed such as poly-p-oxazobenzene (PBO), polyimide (PI), pre-dip. A dielectric material (Prepreg, PP for short) or a solder material such as green paint.
又,該承載件20之第二側20b上方之佈設構造係與該承載件20之第一側20a上方之佈設構造相同。 Moreover, the laying structure above the second side 20b of the carrier 20 is the same as the laying structure above the first side 20a of the carrier 20.
另外,該封裝層24係定義出複數相鄰接之封裝單元A(如第2D圖所示之假想界線X),且每一封裝單元A係包含至少一該電子元件21。 In addition, the encapsulation layer 24 defines a plurality of adjacent package units A (such as the imaginary boundary line X shown in FIG. 2D), and each package unit A includes at least one of the electronic components 21.
如第2E圖所示,移除該承載件20(及其上之離型層),且保留該金屬層200。 As shown in FIG. 2E, the carrier 20 (and the release layer thereon) is removed and the metal layer 200 is retained.
如第2F圖所示,以例如蝕刻方式或其它方式移除該金屬層200,以外露該結合層214(或該電子元件21之非作用面21b)。接著,形成複數如銲球之導電元件27於最外層之線路重佈層261上,俾供後續接置如封裝結構或其它結構(如另一封裝件或晶片)之電子裝置(圖略)。 As shown in FIG. 2F, the metal layer 200 is removed by, for example, etching or otherwise, and the bonding layer 214 (or the non-active surface 21b of the electronic component 21) is exposed. Next, a plurality of conductive elements 27, such as solder balls, are formed on the outermost circuit redistribution layer 261 for subsequent connection to an electronic device such as a package structure or other structure such as another package or wafer (not shown).
於本實施例中,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)270於最外層之線路重佈層261上,以利於結合該導電元件27。 In this embodiment, an Under Bump Metallurgy (UBM) 270 can be formed on the outermost circuit redistribution layer 261 to facilitate bonding of the conductive element 27.
再者,該電子封裝結構2定義有複數封裝單元A(即電子封裝件2a),其中,各該封裝單元A(電子封裝件2a)中係具有至少一該電子元件21、包覆該電子元件21之封裝層24、以及設於該電子元件21與該封裝層24上之線路結構,亦即單一該電子封裝件2a中可依需求具有複數個該電子元件21。 In addition, the electronic package structure 2 defines a plurality of package units A (ie, the electronic package 2a), wherein each of the package units A (the electronic package 2a) has at least one of the electronic components 21 and encapsulates the electronic components. The encapsulation layer 24 of 21, and the circuit structure disposed on the electronic component 21 and the encapsulation layer 24, that is, a single electronic component 21 can be provided in a single electronic package 2a.
又,於後續製程中可進行切單製程,以得到如第2F’圖所示之CSP電子封裝件2a。 Further, a singulation process can be performed in a subsequent process to obtain a CSP electronic package 2a as shown in Fig. 2F'.
因此,本發明之製法係藉由該承載件20之第一側20a與第二側20b上均佈設有電子元件21、封裝層24與線路結構26(較佳地,該承載件20之第二側20b上方之佈設構造與該承載件20之第一側20a上方之佈設構造相同),而能平衡該承載件20之第一側20a與第二側20b所受之應力,故於熱循環時,能防止該承載件20翹曲,以避免發生 植球掉落或裂開等問題,且能避免該電子元件21發生碎裂,進而提升產品良率。 Therefore, the method of the present invention is characterized in that the first side 20a and the second side 20b of the carrier 20 are uniformly provided with the electronic component 21, the encapsulation layer 24 and the circuit structure 26 (preferably, the second of the carrier 20). The arrangement above the side 20b is the same as the arrangement above the first side 20a of the carrier 20, and the stress on the first side 20a and the second side 20b of the carrier 20 can be balanced, so during thermal cycling. , can prevent the carrier 20 from warping to avoid occurrence The problem that the ball is dropped or cracked, and the electronic component 21 can be prevented from being chipped, thereby improving the product yield.
再者,本發明之製法因可於該承載件20之第一側20a與第二側20b上進行電子封裝件2a之製作,故相較於習知技術,本發明之產能可提升為習知製法之至少兩倍,因而能大幅降低製作成本。 Furthermore, the method of the present invention can be used to fabricate the electronic package 2a on the first side 20a and the second side 20b of the carrier 20. Therefore, the productivity of the present invention can be improved as compared with the prior art. At least twice the system, which can significantly reduce production costs.
第3A至3B圖係為本發明之電子封裝結構3之製法之第二實施例的剖面示意圖。本實施例與第一實施例之差異在於新增導電柱,故以下僅說明相異處,而不再贅述相同處。 3A to 3B are cross-sectional views showing a second embodiment of the manufacturing method of the electronic package structure 3 of the present invention. The difference between this embodiment and the first embodiment is that a new conductive column is added, so only the differences will be described below, and the same points will not be described again.
如第3A圖所示,係於第2A圖之製程中,於該第一側20a上形成複數導電柱33,以令該封裝層24包覆該些導電柱33,且於第2B圖之製程中,於該第二側20b上形成複數導電柱33,以令該封裝層24包覆該些導電柱33。 As shown in FIG. 3A, in the process of FIG. 2A, a plurality of conductive pillars 33 are formed on the first side 20a, so that the encapsulation layer 24 covers the conductive pillars 33, and the process of FIG. 2B is performed. A plurality of conductive pillars 33 are formed on the second side 20b to cover the conductive pillars 33.
於本實施例中,於第2C圖之整平製程中,該封裝層24之第一表面24a齊平該導電柱33之端面及導電體212之端面,使該導電柱33之端面及導電體212之端面外露於該封裝層24。例如,於整平製程中,可移除該導電柱33及導電體212之部分材質。 In the embodiment, in the leveling process of FIG. 2C, the first surface 24a of the encapsulation layer 24 is flush with the end surface of the conductive pillar 33 and the end surface of the conductor 212, so that the end surface of the conductive pillar 33 and the conductor The end face of 212 is exposed to the encapsulation layer 24. For example, in the leveling process, part of the material of the conductive pillar 33 and the conductor 212 may be removed.
再者,於第2D圖之線路結構製程中,令該線路結構26之線路重佈層261電性連接該導電柱33及導電體212,其中,形成該導電柱33之材質係為如銅之金屬材或銲錫材。 Furthermore, in the circuit structure process of FIG. 2D, the circuit redistribution layer 261 of the circuit structure 26 is electrically connected to the conductive pillar 33 and the electrical conductor 212, wherein the material of the conductive pillar 33 is formed as copper. Metal or solder.
又,於另一實施例中,亦可於第2C圖之整平製程後, 再形成貫穿該封裝層24之穿孔,之後形成金屬材於該穿孔中以作為該導電柱33。 Moreover, in another embodiment, after the leveling process of FIG. 2C, A through hole penetrating the encapsulation layer 24 is formed, and then a metal material is formed in the perforation as the conductive post 33.
如第3B圖所示,係如第2E及2F圖所示之製程,移除該承載件20(及其上之離型層)與該金屬層200,使該導電柱33之端面外露於該封裝層24之第二表面24b。接著,形成該些導電元件27於該線路結構26上。 As shown in FIG. 3B, in the process shown in FIGS. 2E and 2F, the carrier 20 (and the release layer thereon) and the metal layer 200 are removed, so that the end face of the conductive post 33 is exposed. The second surface 24b of the encapsulation layer 24. Next, the conductive elements 27 are formed on the line structure 26.
於本實施例中,該電子封裝結構3係定義有複數電子封裝件3a,且單一該電子封裝件3a中係具有至少一該電子元件21。 In the embodiment, the electronic package structure 3 defines a plurality of electronic packages 3a, and the single electronic package 3a has at least one of the electronic components 21.
因此,本發明之製法係藉由該承載件20之第一側20a與第二側20b上均佈設有電子元件21、導電柱33、封裝層24與線路結構26,而能平衡該承載件20之第一側20a與第二側20b所受之應力,故於熱循環時,能防止該承載件20翹曲,以避免發生植球掉落或裂開等問題,且能避免該電子元件21發生碎裂,進而提升產品良率。 Therefore, the method of the present invention balances the carrier 20 by distributing the electronic component 21, the conductive pillars 33, the encapsulation layer 24 and the wiring structure 26 on the first side 20a and the second side 20b of the carrier 20. The stress on the first side 20a and the second side 20b is such that during the thermal cycle, the carrier 20 can be prevented from warping to avoid problems such as falling or cracking of the ball, and the electronic component 21 can be avoided. Fragmentation occurs, which in turn increases product yield.
再者,本發明之製法因可於該承載件20之第一側20a與第二側20b上進行電子封裝件3a之製作,故相較於習知技術,本發明之產能可提升為習知製法之兩倍,因而能大幅降低製作成本。 Furthermore, the method of the present invention can be used to fabricate the electronic package 3a on the first side 20a and the second side 20b of the carrier 20. Therefore, the productivity of the present invention can be improved as compared with the prior art. Double the system, which can significantly reduce production costs.
本發明提供一種電子封裝結構2,3,其包括複數封裝單元A(電子封裝件2a),且各該封裝單元A係包含:一封裝層24、至少一電子元件21、以及一線路結構26。 The present invention provides an electronic package structure 2, 3 comprising a plurality of package units A (electronic package 2a), and each package unit A comprises: an encapsulation layer 24, at least one electronic component 21, and a line structure 26.
所述之封裝層24係具有相對之第一表面24a與第二表面24b。 The encapsulation layer 24 has opposite first and second surfaces 24a, 24b.
所述之電子元件21係嵌設於該封裝層24中,且該電子元件21之主動面上設有複數導電體212。 The electronic component 21 is embedded in the encapsulation layer 24, and a plurality of electrical conductors 212 are disposed on the active surface of the electronic component 21.
所述之線路結構26係形成於該封裝層24之第一表面24a上且電性連接該電子元件21之導電體212。 The circuit structure 26 is formed on the first surface 24a of the encapsulation layer 24 and electrically connected to the electrical conductor 212 of the electronic component 21.
於一實施例中,該電子封裝結構2,3復包括具有相對之第一側20a與第二側20b之承載件20,係以其第一側20a結合於該封裝層24之第二表面24b上。例如,該承載件20之第二側20b上方之佈設構造係與該承載件20之第一側20a上方之佈設構造相同,亦即該承載件20之第二側20b上復形成有與該第一側20a相對應之封裝層24、電子元件21及線路結構26。 In one embodiment, the electronic package structure 2, 3 includes a carrier 20 having a first side 20a and a second side 20b opposite thereto, with the first side 20a bonded to the second surface 24b of the encapsulation layer 24. on. For example, the laying structure above the second side 20b of the carrier 20 is the same as the laying structure above the first side 20a of the carrier 20, that is, the second side 20b of the carrier 20 is formed with the first The encapsulation layer 24, the electronic component 21, and the wiring structure 26 corresponding to one side 20a.
於一實施例中,該電子封裝結構2,3復包括複數導電元件27,係形成於該線路結構26上。 In one embodiment, the electronic package structure 2, 3 includes a plurality of conductive elements 27 formed on the line structure 26.
於一實施例中,該電子封裝結構3復包括複數導電柱33,係形成於該封裝層24中且電性連接該線路結構26。 In one embodiment, the electronic package structure 3 includes a plurality of conductive pillars 33 formed in the package layer 24 and electrically connected to the circuit structure 26 .
綜上所述,本發明之電子封裝結構及其製法,係藉由該承載件之第一側與第二側上均進行該電子封裝件之製程,以防止該承載件於熱循環時發生翹曲,故能避免因承載件翹曲而所衍生之問題。 In summary, the electronic package structure of the present invention and the method for manufacturing the electronic package are performed on the first side and the second side of the carrier to prevent the carrier from being warped during thermal cycling. Qu, so it can avoid the problems caused by the warpage of the bearing.
再者,本發明因可於該承載件之第一側與第二側上進行電子封裝件之製作,故可提升其產能,因而能降低製作成本。 Furthermore, in the present invention, since the electronic package can be fabricated on the first side and the second side of the carrier, the production capacity can be increased, thereby reducing the manufacturing cost.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可 在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Anyone who is familiar with this skill can The above embodiments are modified without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
20‧‧‧承載件 20‧‧‧Carrier
20a‧‧‧第一側 20a‧‧‧ first side
20b‧‧‧第二側 20b‧‧‧ second side
21‧‧‧電子元件 21‧‧‧Electronic components
212‧‧‧導電體 212‧‧‧Electric conductor
24‧‧‧封裝層 24‧‧‧Encapsulation layer
24a‧‧‧第一表面 24a‧‧‧ first surface
26‧‧‧線路結構 26‧‧‧Line structure
260,260’‧‧‧絕緣層 260,260'‧‧‧Insulation
261‧‧‧線路重佈層 261‧‧‧Line redistribution
A‧‧‧封裝單元 A‧‧‧Package unit
X‧‧‧假想界線 X‧‧‧ imaginary boundary
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TW105127855A TWI611484B (en) | 2016-08-30 | 2016-08-30 | Electronic package structure and the manufacture thereof |
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