TWI605144B - 晶圓處理沉積屏蔽部件 - Google Patents
晶圓處理沉積屏蔽部件 Download PDFInfo
- Publication number
- TWI605144B TWI605144B TW105104782A TW105104782A TWI605144B TW I605144 B TWI605144 B TW I605144B TW 105104782 A TW105104782 A TW 105104782A TW 105104782 A TW105104782 A TW 105104782A TW I605144 B TWI605144 B TW I605144B
- Authority
- TW
- Taiwan
- Prior art keywords
- collimator
- apertures
- central region
- peripheral region
- shield
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims description 75
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 35
- 238000004544 sputter deposition Methods 0.000 claims description 32
- 230000004907 flux Effects 0.000 claims description 19
- 238000005477 sputtering target Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 36
- 230000008569 process Effects 0.000 description 30
- 238000000151 deposition Methods 0.000 description 18
- 238000005240 physical vapour deposition Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17262709P | 2009-04-24 | 2009-04-24 | |
| US12/482,846 US20090308739A1 (en) | 2008-06-17 | 2009-06-11 | Wafer processing deposition shielding components |
| US12/482,713 US20090308732A1 (en) | 2008-06-17 | 2009-06-11 | Apparatus and method for uniform deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201634719A TW201634719A (zh) | 2016-10-01 |
| TWI605144B true TWI605144B (zh) | 2017-11-11 |
Family
ID=43011685
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110122261A TWI789790B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW099110795A TWI527921B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108140207A TWI715279B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108104471A TWI695078B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW111117130A TWI844851B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW109128551A TWI741750B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW105104782A TWI605144B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW106134224A TWI654329B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Family Applications Before (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110122261A TWI789790B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW099110795A TWI527921B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108140207A TWI715279B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108104471A TWI695078B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW111117130A TWI844851B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW109128551A TWI741750B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106134224A TWI654329B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Country Status (4)
| Country | Link |
|---|---|
| KR (6) | KR102186535B1 (ko) |
| CN (2) | CN102301451A (ko) |
| TW (8) | TWI789790B (ko) |
| WO (1) | WO2010123680A2 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8702918B2 (en) * | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
| KR20160002543A (ko) | 2014-06-30 | 2016-01-08 | 세메스 주식회사 | 기판 처리 장치 |
| US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
| US9887073B2 (en) | 2015-02-13 | 2018-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition system and physical vapor depositing method using the same |
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| JP6088083B1 (ja) * | 2016-03-14 | 2017-03-01 | 株式会社東芝 | 処理装置及びコリメータ |
| US11424112B2 (en) * | 2017-11-03 | 2022-08-23 | Varian Semiconductor Equipment Associates, Inc. | Transparent halo assembly for reduced particle generation |
| CN116114126A (zh) | 2021-06-11 | 2023-05-12 | 肖特日本株式会社 | 气密端子及该气密端子的制造方法 |
| US20220406583A1 (en) * | 2021-06-18 | 2022-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
| KR102594388B1 (ko) * | 2021-08-24 | 2023-10-27 | 전주대학교 산학협력단 | Mec 환경에서 긴급 데이터 전송을 위한 sdn 기반 패킷 스케줄링 방법 |
| CN115449762A (zh) * | 2022-08-22 | 2022-12-09 | 无锡尚积半导体科技有限公司 | 一种用于磁控溅射设备的准直器及磁控溅射设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| JPH093639A (ja) * | 1995-06-23 | 1997-01-07 | Applied Materials Inc | Ｐｖｄ装置 |
| JPH11200029A (ja) * | 1998-01-13 | 1999-07-27 | Victor Co Of Japan Ltd | スパッタリング装置 |
| US20030015421A1 (en) | 2001-07-20 | 2003-01-23 | Applied Materials, Inc. | Collimated sputtering of cobalt |
| US6780294B1 (en) * | 2002-08-19 | 2004-08-24 | Set, Tosoh | Shield assembly for substrate processing chamber |
| JP2004083984A (ja) * | 2002-08-26 | 2004-03-18 | Fujitsu Ltd | スパッタリング装置 |
| JP2007273490A (ja) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
-
2010
- 2010-04-06 WO PCT/US2010/030116 patent/WO2010123680A2/en active Application Filing
- 2010-04-06 CN CN2010800064499A patent/CN102301451A/zh active Pending
- 2010-04-06 KR KR1020197025908A patent/KR102186535B1/ko active IP Right Grant
- 2010-04-06 CN CN201710120243.2A patent/CN107039230A/zh active Pending
- 2010-04-06 KR KR1020217013278A patent/KR102374073B1/ko active IP Right Grant
- 2010-04-06 KR KR1020187035627A patent/KR102020010B1/ko active IP Right Grant
- 2010-04-06 KR KR1020177017742A patent/KR101929971B1/ko active IP Right Grant
- 2010-04-06 KR KR1020117028097A patent/KR101782355B1/ko active IP Right Grant
- 2010-04-06 KR KR1020207034181A patent/KR102262978B1/ko active IP Right Grant
- 2010-04-07 TW TW110122261A patent/TWI789790B/zh active
- 2010-04-07 TW TW099110795A patent/TWI527921B/zh active
- 2010-04-07 TW TW108140207A patent/TWI715279B/zh active
- 2010-04-07 TW TW108104471A patent/TWI695078B/zh active
- 2010-04-07 TW TW111117130A patent/TWI844851B/zh active
- 2010-04-07 TW TW109128551A patent/TWI741750B/zh not_active IP Right Cessation
- 2010-04-07 TW TW105104782A patent/TWI605144B/zh active
- 2010-04-07 TW TW106134224A patent/TWI654329B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201634719A (zh) | 2016-10-01 |
| KR20200136061A (ko) | 2020-12-04 |
| TWI844851B (zh) | 2024-06-11 |
| KR102186535B1 (ko) | 2020-12-03 |
| TW202136549A (zh) | 2021-10-01 |
| TWI741750B (zh) | 2021-10-01 |
| TWI695078B (zh) | 2020-06-01 |
| KR20190105132A (ko) | 2019-09-11 |
| KR102020010B1 (ko) | 2019-09-09 |
| KR20180133566A (ko) | 2018-12-14 |
| KR20210052600A (ko) | 2021-05-10 |
| TW201920726A (zh) | 2019-06-01 |
| TW202000961A (zh) | 2020-01-01 |
| TW201814075A (zh) | 2018-04-16 |
| WO2010123680A2 (en) | 2010-10-28 |
| KR101929971B1 (ko) | 2018-12-18 |
| KR20170076824A (ko) | 2017-07-04 |
| TW202307237A (zh) | 2023-02-16 |
| TW202102703A (zh) | 2021-01-16 |
| TWI527921B (zh) | 2016-04-01 |
| TW201100571A (en) | 2011-01-01 |
| TWI654329B (zh) | 2019-03-21 |
| KR102374073B1 (ko) | 2022-03-11 |
| TWI789790B (zh) | 2023-01-11 |
| CN102301451A (zh) | 2011-12-28 |
| KR20140014378A (ko) | 2014-02-06 |
| KR102262978B1 (ko) | 2021-06-08 |
| CN107039230A (zh) | 2017-08-11 |
| TWI715279B (zh) | 2021-01-01 |
| WO2010123680A3 (en) | 2011-01-13 |
| KR101782355B1 (ko) | 2017-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI605144B (zh) | 晶圓處理沉積屏蔽部件 | |
| US20090308739A1 (en) | Wafer processing deposition shielding components | |
| JP7504938B2 (ja) | Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ | |
| US20090308732A1 (en) | Apparatus and method for uniform deposition | |
| JP2019529706A (ja) | １つの酸化物金属堆積チャンバ |