TWI593651B - 鍍膜玻璃及其製造方法、應用該鍍膜玻璃之電子裝置 - Google Patents

鍍膜玻璃及其製造方法、應用該鍍膜玻璃之電子裝置 Download PDF

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TWI593651B
TWI593651B TW103133864A TW103133864A TWI593651B TW I593651 B TWI593651 B TW I593651B TW 103133864 A TW103133864 A TW 103133864A TW 103133864 A TW103133864 A TW 103133864A TW I593651 B TWI593651 B TW I593651B
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film layer
glass substrate
glass
mass fraction
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杰良 陳
魏朝滄
簡士哲
廖名揚
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鴻海精密工業股份有限公司
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Description

鍍膜玻璃及其製造方法、應用該鍍膜玻璃之電子裝置
本發明涉及一種鍍膜玻璃、該鍍膜玻璃之製造方法及應用該鍍膜玻璃之電子裝置。
玻璃因具有較好之透光性而被廣泛應用。然，因玻璃之表面抗刮性較差，不能滿足產品所需要之抗刮性能，而影響了其使用效果和適用範圍。
有鑑於此，有必要提供一種抗刮性能較好之鍍膜玻璃。
另，還有必要提供一種上述鍍膜玻璃之製造方法。
另，還有必要提供一種應用上述鍍膜玻璃之電子裝置。
一種鍍膜玻璃，其包括玻璃基板及結合於該玻璃基板至少一表面之膜層，該膜層含有Al2O3、Cr2O3和ZrO2。
一種鍍膜玻璃之製造方法，其包括如下步驟：提供玻璃基板；採用磁控濺射法，以鋁靶、鉻靶和鋯靶為靶材，以氧氣為反應氣體，在玻璃基板之表面濺鍍膜層，該膜層中含有Al2O3、Cr2O3和ZrO2。
一種應用所述鍍膜玻璃之電子裝置，該電子裝置還包括主體，所述鍍膜玻璃裝設於該主體上。
所述鍍膜玻璃藉由在玻璃基板之表面鍍覆含有Al2O3、Cr2O3和ZrO2之膜層，使鍍膜玻璃具有較好之抗刮性能。
100‧‧‧鍍膜玻璃
10‧‧‧玻璃基板
20‧‧‧膜層
200‧‧‧真空鍍膜機
21‧‧‧鍍膜室
22‧‧‧鋁靶
23‧‧‧鉻靶
24‧‧‧鋯靶
25‧‧‧軌跡
30‧‧‧真空泵
300‧‧‧電子裝置
301‧‧‧主體
圖1為本發明較佳實施方式之鍍膜玻璃之示意圖。
圖2為本發明所使用之真空鍍膜機之俯視圖。
圖3為應用圖1所述鍍膜玻璃之電子裝置。
請參閱圖1，本發明一較佳實施方式之鍍膜玻璃100，其包括玻璃基板10和結合於該玻璃基板10至少一表面之膜層20。該膜層20含有氧化鋁(Al2O3)、氧化鉻(Cr2O3)和氧化鋯(ZrO2)。
所述膜層20中的Al2O3可增加膜層20之硬度與抗刮性。所述膜層20中的Cr2O3可增加膜層20與玻璃基板10之附著性，並強化膜層20之韌性。所述膜層20中的ZrO2可強化膜層20之韌性。
所述膜層20之厚度範圍為1~4μm，該膜層20中所含Al2O3之質量分數為94%~96%，含Cr2O3之質量分數為1.7%~3.8%，含ZrO2之質量分數為0.8%~2.3%。
一種製造上述鍍膜玻璃100之方法，其包括如下步驟：
提供玻璃基板10。
請進一步參閱圖2，提供一真空鍍膜機200，其包括一鍍膜室21及連接於鍍膜室21之真空泵30，該真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)、鋁靶22、鉻靶23和鋯靶24。
對玻璃基板10進行表面預處理，該表面預處理可包括常規之對玻璃基板10進行清洗等步驟，將預處理後之玻璃基板10烘乾後固定於鍍膜室21內之轉架上。轉架可帶動玻璃基板10沿圓形之軌跡25公轉，且玻璃基板10在沿軌跡25公轉時亦自轉。
抽真空：開啟真空泵30，將鍍膜室21抽真空至8×10-5~3×10-4Torr。
洗靶：通入工作氣體氬氣，氬氣之流量為100~300標況毫升每分鐘(sccm)，在恒定功率5~10KW下，洗靶3~5分鐘，以將鋁靶22、鉻靶23和鋯靶24表面之氧化物及油漬等雜質清除。
繼續對鍍膜室21抽真空並加熱，用真空泵300抽真空至8×10-5~3×10-4Torr，將鍍膜室21之溫度加熱至150~250℃。
高電壓氬離子輝光清洗：控製鍍膜室21溫度為150~200℃，偏壓設定為-200~-100V，通入工作氣體氬氣，對玻璃基板10表面進行清洗3~5分鐘，藉由氬離子轟擊，可進一步對基板10之表面進行清洗，並增加基板10表面之附著力。
採用磁控濺射法，以鋁靶22、鉻靶23和鋯靶24為靶材，在清洗後之玻璃基板10之表面濺鍍膜層20。鋁靶22、鉻靶23和鋯靶24均採用射頻電源，濺鍍時，同時開啟鋁靶22、鉻靶23和鋯靶24，並設置鋁靶22之功率為5~15KW，鉻靶23之功率為0.5~5KW，鋯靶24之功率為0.5~5KW，通入反應氣體氧氣，氧氣之流量為100~400sccm，控製鍍膜室21內之溫度為150~250℃，施加於玻璃基板10之偏壓為-300~0V(偏壓為0V意為未施加偏壓)，鍍膜時間為120~960分鐘。
下面藉由實施例來對本發明進行具體說明。
實施例1
提供玻璃基板10，該玻璃基板10為透光玻璃，對該玻璃基板10進行表面預處理，將預處理後之玻璃基板10烘乾後固定於鍍膜室21內之轉架上。
抽真空：開啟真空泵30，將鍍膜室21抽真空至1×10-4Torr。
洗靶：通入工作氣體氬氣，氬氣之流量為200sccm，在恒定功率8KW下，洗靶4分鐘。
對鍍膜室21抽真空並加熱，鍍膜室21之溫度設定為200℃，用真空泵300抽真空至1×10-4Torr。
高電壓氬離子輝光清洗：鍍膜室21溫度為200℃，偏壓設定為-150V，通入工作氣體氬氣，對玻璃基板10表面進行清洗，清洗4分鐘。
以鋁靶22、鉻靶23和鋯靶24為靶材，採用磁控濺射法在清洗後之玻璃基板10表面濺鍍膜層20。鋁靶22、鉻靶23和鋯靶24均採用射頻電源，濺鍍時，同時開啟鋁靶22、鉻靶23和鋯靶24，並設置鋁靶22之功率為15KW，鉻靶23之功率為3KW，鋯靶24之功率為2KW，通入反應氣體氧氣，氧氣之流量為300sccm，鍍膜室21之室內溫度為250℃，此實施例不施加偏壓於玻璃基板10上，鍍膜時間為480分鐘。
所得膜層20之厚度為2.01μm，所含Al2O3之質量分數為94.33%，含Cr2O3之質量分數為3.53%，含ZrO2之質量分數為2.14%。
實施例2
提供玻璃基板10，該玻璃基板10為透光玻璃，對該玻璃基板10進行表面預處理，將預處理後之玻璃基板10烘乾後固定於鍍膜室21內之轉架上。
抽真空：開啟真空泵30，將鍍膜室21抽真空至3×10-4Torr。
洗靶：通入工作氣體氬氣，氬氣之流量為100sccm，在恒定功率5KW下，洗靶3分鐘。
對鍍膜室21抽真空並加熱，鍍膜室21之溫度設定為150℃，用真空泵300抽真空至3×10-4Torr。
高電壓氬離子輝光清洗：鍍膜室21溫度為150℃，偏壓設定為-100V，通入工作氣體氬氣，對玻璃基板10表面進行清洗，清洗3分鐘。
以鋁靶22、鉻靶23和鋯靶24為靶材，採用磁控濺射法在清洗後之玻璃基板10表面濺鍍膜層20。鋁靶22、鉻靶23和鋯靶24均採用射頻電源，濺鍍時，同時開啟鋁靶22、鉻靶23和鋯靶24，並設置鋁靶22之功率為10KW，鉻靶23之功率為2.25KW，鋯靶24之功率為0.75KW，通入反應氣體氧氣，氧氣之流量為200sccm，鍍膜室21之室內溫度為150℃，此實施例不施加偏壓於玻璃基板10上，鍍膜時間為240分鐘。
所得膜層20之厚度為1.2μm，所含Al2O3之質量分數為94%，含Cr2O3之質量分數為3.8%，含ZrO2之質量分數為2.2%。
實施例3
提供玻璃基板10，該玻璃基板10為透光玻璃，對該玻璃基板10進行表面預處理，將預處理後之玻璃基板10烘乾後固定於鍍膜室21內之轉架上。
抽真空：開啟真空泵30，將鍍膜室21抽真空至8×10-5Torr。
洗靶：通入工作氣體氬氣，氬氣之流量為300sccm，在恒定功率10KW下，洗靶5分鐘。
對鍍膜室21抽真空並加熱，鍍膜室21之溫度設定為250℃，用真空泵300抽真空至8×10-5Torr。
高電壓氬離子輝光清洗：鍍膜室21溫度為250℃，偏壓設定為-200V，通入工作氣體氬氣，對玻璃基板10表面進行清洗，清洗5分鐘。
以鋁靶22、鉻靶23和鋯靶24為靶材，採用磁控濺射法在清洗後之玻璃基板10表面濺鍍膜層20。鋁靶22、鉻靶23和鋯靶24均採用射頻電源，濺鍍時，同時開啟鋁靶22、鉻靶23和鋯靶24，並設置鋁靶22之功率為20KW，鉻靶23之功率為3.75KW，鋯靶24之功率為1.25KW，通入反應氣體氧氣，氧氣之流量為300sccm，鍍膜室21之室內溫度為250℃，此實施例不施加偏壓於玻璃基板10上，鍍膜時間為960分鐘。
所得膜層20之厚度為3.98μm，所含Al2O3之質量分數為95.7%，含Cr2O3之質量分數為2.5%，含ZrO2之質量分數為1.8%。
請進一步參閱圖3，一種應用所述鍍膜玻璃100之電子裝置300，該電子裝置300包括主體301，所述鍍膜玻璃100裝設於該主體301。該電子裝置300可為電腦、手機、手錶、電視機、電子閱讀器、或相機等應用透明玻璃之裝置。
所述鍍膜玻璃100藉由在玻璃基板10之表面鍍覆含有Al2O3、Cr2O3和ZrO2之膜層20，使鍍膜玻璃100具有較好之抗刮性能。
100‧‧‧鍍膜玻璃
10‧‧‧玻璃基板
20‧‧‧膜層

Claims (4)

  1. 一種鍍膜玻璃，其包括玻璃基板及結合於該玻璃基板至少一表面之膜層，其改良在於：該膜層中含有Al2O3、Cr2O3和ZrO2，所述膜層中Al2O3之質量分數為94%~96%，Cr2O3之質量分數為1.7%~3.8%以增加膜層與玻璃基板之附著性並強化膜層之韌性，ZrO2之質量分數為0.8%~2.3%以強化膜層之韌性，所述膜層之厚度範圍為1~4μm。
  2. 一種鍍膜玻璃之製造方法，其包括如下步驟：提供玻璃基板；採用磁控濺射法，以鋁靶、鉻靶和鋯靶為靶材，以氧氣為反應氣體，在玻璃基板之表面濺鍍膜層，該濺鍍膜層之工藝參數為：同時開啟鋁靶、鉻靶和鋯靶，鋁靶之功率為5~15KW，鉻靶之功率為0.5~5KW，鋯靶之功率為0.5~5KW，通入反應氣體氧氣，氧氣之流量為100~400sccm，鍍膜室內之溫度為150~250℃，施加於玻璃基板10之偏壓為-300~0V，鍍膜時間為120~960分鐘，該膜層中含有Al2O3、Cr2O3和ZrO2，所述膜層中Al2O3之質量分數為94%~96%，Cr2O3之質量分數為1.7%~3.8%以增加膜層與玻璃基板之附著性並強化膜層之韌性，ZrO2之質量分數為0.8%~2.3%以強化膜層之韌性，所述膜層之厚度範圍為1~4μm。
  3. 如申請專利範圍第2項所述之鍍膜玻璃之製造方法，其中，所述方法還包括在濺鍍膜層之前洗靶和高電壓氬離子輝光清洗玻璃基板之步驟。
  4. 一種應用申請專利範圍第1項所述之鍍膜玻璃之電子裝置，該電子裝置還包括主體，所述鍍膜玻璃裝設於該主體上。
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