TWI593094B - 光學感測器 - Google Patents
光學感測器 Download PDFInfo
- Publication number
- TWI593094B TWI593094B TW106100686A TW106100686A TWI593094B TW I593094 B TWI593094 B TW I593094B TW 106100686 A TW106100686 A TW 106100686A TW 106100686 A TW106100686 A TW 106100686A TW I593094 B TWI593094 B TW I593094B
- Authority
- TW
- Taiwan
- Prior art keywords
- top portion
- color filter
- optical sensor
- filter unit
- acute angle
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims description 103
- 230000001154 acute effect Effects 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 9
- 230000005684 electric field Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/354,337 US9991302B1 (en) | 2016-11-17 | 2016-11-17 | Optical sensor with color filters having inclined sidewalls |
| US15/354,337 | 2016-11-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI593094B true TWI593094B (zh) | 2017-07-21 |
| TW201820599A TW201820599A (zh) | 2018-06-01 |
Family
ID=60048676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106100686A TWI593094B (zh) | 2016-11-17 | 2017-01-10 | 光學感測器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9991302B1 (ja) |
| JP (1) | JP6283762B1 (ja) |
| CN (1) | CN108074942B (ja) |
| TW (1) | TWI593094B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI679404B (zh) * | 2018-03-01 | 2019-12-11 | 美商梅瑞堤儀器公司 | 基於可適應性模組化光學感測器的製程控制系統及其操作方法 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102600673B1 (ko) | 2016-08-05 | 2023-11-13 | 삼성전자주식회사 | 이미지 센서 |
| US10269844B2 (en) * | 2017-06-27 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of light sensing device |
| US10983318B2 (en) * | 2018-08-02 | 2021-04-20 | Visera Technologies Company Limited | Optical elements |
| US10684400B2 (en) * | 2018-08-03 | 2020-06-16 | Visera Technologies Company Limited | Optical elements and method for fabricating the same |
| CN110823845B (zh) * | 2018-08-08 | 2021-05-25 | 京东方科技集团股份有限公司 | 光谱仪及其制作方法 |
| US10955597B2 (en) * | 2019-01-04 | 2021-03-23 | Visera Technologies Company Limited | Optical devices |
| US10770602B1 (en) * | 2019-02-20 | 2020-09-08 | Vanguard International Semiconductor Corporation | Optical sensor and method for forming the same |
| CN110010634B (zh) * | 2019-02-27 | 2021-07-06 | 德淮半导体有限公司 | 隔离结构及其形成方法，图像传感器及其制造方法 |
| JP2020177059A (ja) | 2019-04-16 | 2020-10-29 | 大日本印刷株式会社 | レンズアレイ、撮像モジュール、撮像装置及びレンズアレイの製造方法 |
| TWI749864B (zh) * | 2020-11-12 | 2021-12-11 | 友達光電股份有限公司 | 光學感測模組 |
| CN117296153A (zh) * | 2021-03-26 | 2023-12-26 | 索尼半导体解决方案公司 | 光检测装置和电子设备 |
| CN118786528A (zh) * | 2022-10-20 | 2024-10-15 | 采钰科技股份有限公司 | 具有厚膜层的光学元件 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009224980A (ja) * | 2008-03-14 | 2009-10-01 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2010239076A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP2010272654A (ja) | 2009-05-20 | 2010-12-02 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| JP2012191136A (ja) * | 2011-03-14 | 2012-10-04 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
| US8742525B2 (en) * | 2011-03-14 | 2014-06-03 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
| JP4872024B1 (ja) | 2011-04-22 | 2012-02-08 | パナソニック株式会社 | 固体撮像装置およびその製造方法 |
| JP2013156463A (ja) | 2012-01-31 | 2013-08-15 | Fujifilm Corp | 撮像素子 |
| JP6141024B2 (ja) | 2012-02-10 | 2017-06-07 | キヤノン株式会社 | 撮像装置および撮像システム |
| US9502453B2 (en) | 2013-03-14 | 2016-11-22 | Visera Technologies Company Limited | Solid-state imaging devices |
| US20140339606A1 (en) | 2013-05-16 | 2014-11-20 | Visera Technologies Company Limited | Bsi cmos image sensor |
| JP6262496B2 (ja) | 2013-11-08 | 2018-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US9425228B2 (en) * | 2013-11-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company Limited | Image sensor with reduced optical path |
| KR20150089644A (ko) * | 2014-01-28 | 2015-08-05 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
| US9513411B2 (en) | 2014-07-31 | 2016-12-06 | Visera Technologies Company Limited | Double-lens structures and fabrication methods thereof |
| JP2016066695A (ja) | 2014-09-24 | 2016-04-28 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
| US9825078B2 (en) * | 2014-11-13 | 2017-11-21 | Visera Technologies Company Limited | Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit |
-
2016
- 2016-11-17 US US15/354,337 patent/US9991302B1/en active Active
-
2017
- 2017-01-10 TW TW106100686A patent/TWI593094B/zh active
- 2017-01-16 CN CN201710032486.0A patent/CN108074942B/zh active Active
- 2017-04-11 JP JP2017077948A patent/JP6283762B1/ja active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI679404B (zh) * | 2018-03-01 | 2019-12-11 | 美商梅瑞堤儀器公司 | 基於可適應性模組化光學感測器的製程控制系統及其操作方法 |
| US10763144B2 (en) | 2018-03-01 | 2020-09-01 | Verity Instruments, Inc. | Adaptable-modular optical sensor based process control system, and method of operation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201820599A (zh) | 2018-06-01 |
| CN108074942B (zh) | 2020-09-18 |
| JP6283762B1 (ja) | 2018-02-21 |
| US20180138329A1 (en) | 2018-05-17 |
| CN108074942A (zh) | 2018-05-25 |
| JP2018082138A (ja) | 2018-05-24 |
| US9991302B1 (en) | 2018-06-05 |
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