TWI591673B - Method of forming an insulating film - Google Patents
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- TWI591673B TWI591673B TW102137418A TW102137418A TWI591673B TW I591673 B TWI591673 B TW I591673B TW 102137418 A TW102137418 A TW 102137418A TW 102137418 A TW102137418 A TW 102137418A TW I591673 B TWI591673 B TW I591673B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/38—Dielectric or insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0209—Multistage baking
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Description
本發明係有關於絕緣膜之形成方法。 The present invention relates to a method of forming an insulating film.
作為取代大且重之陰極射線管的畫面顯示裝置,輕且薄型之所謂平板顯示器正受到注目。雖然正在積極地開發液晶顯示器作為平板顯示器,但液晶顯示器具有視角狹窄的缺點。此外,自發光型之放電型顯示器的電漿顯示器或使用電子釋放元件的畫面顯示裝置,由於相較於液晶顯示器的視角寬,再者能夠符合大畫面化及高精細化的要求,所以其需求正在升高。 As a screen display device that replaces a large and heavy cathode ray tube, a so-called flat panel display that is light and thin is attracting attention. Although liquid crystal displays are actively being developed as flat panel displays, liquid crystal displays have the disadvantage of narrow viewing angles. In addition, a plasma display device of a self-luminous discharge type display or a screen display device using an electronic release device has a wide viewing angle compared with a liquid crystal display, and can meet the requirements of large screen and high definition. Is rising.
電漿顯示器具有前面板及背面板以固定間隔相對向而以密封玻璃來氣密封裝其周圍的結構。在設置於前面板及背面板之間的放電空間內係顯示電極及位址電極相對向。然後該等電極間發生電漿放電,由封裝於放電空間內的Xe-Ne等的氣體產生紫外線,將其通過放電空間內的螢光體以進行顯示。 The plasma display has a structure in which the front panel and the back panel are opposed to each other at a fixed interval and hermetically sealed by a sealing glass. The display electrode and the address electrode are opposed to each other in a discharge space provided between the front panel and the back panel. Then, plasma discharge occurs between the electrodes, and ultraviolet rays are generated by a gas such as Xe-Ne encapsulated in the discharge space, and the particles are passed through the phosphor in the discharge space for display.
前面板係將包含導電性金屬粒子的顯示電極形成為長條狀,將用於包覆該等以維持電漿放電的絕緣膜形成為固體膜狀。此外背面板係形成位址電極,與前面板相同地形成用於包覆該等的絕緣膜。再者背面板的絕緣膜上係為了抑制電漿放電寬度於固定範圍而在指定 的晶胞內進行顯示同時確保均勻之放電空間而形成隔板,在晶胞內形成了用於發光的螢光體層。 In the front panel, the display electrode including the conductive metal particles is formed into a strip shape, and the insulating film for covering the electrodes to maintain the plasma discharge is formed into a solid film shape. Further, the back surface plate is formed with an address electrode, and an insulating film for coating the same is formed in the same manner as the front panel. Furthermore, the insulating film on the back panel is specified in order to suppress the plasma discharge width in a fixed range. The display is performed in the unit cell while ensuring a uniform discharge space to form a separator, and a phosphor layer for emitting light is formed in the unit cell.
作為形成如上述之絕緣膜的既有方法,已知有將含有玻璃粒子之絕緣糊以網版印刷法或整體塗布法塗布於基板上並乾燥,將有機成分熱分解、除去後,燒結玻璃粒子等的方法(專利文獻1)。又,前面板的絕緣膜需要操縱所謂高耐電壓及高可見光穿透率之絕緣膜及電極的反應性、絕緣膜之表面粗糙度及絕緣膜內之氣泡的狀態的特性,亦正開發提升該等特性的技術(專利文獻2及3)。 As an existing method of forming the insulating film as described above, it is known that an insulating paste containing glass particles is applied onto a substrate by a screen printing method or an overall coating method, and dried, and the organic component is thermally decomposed and removed, and the glass particles are sintered. The method (Patent Document 1). Moreover, the insulating film of the front panel needs to be manipulated to have the characteristics of the insulating film and the electrode having high withstand voltage and high visible light transmittance, the surface roughness of the insulating film, and the state of the bubble in the insulating film. Techniques such as characteristics (Patent Documents 2 and 3).
再者,作為其為不發生龜裂和從基板剝離的絕緣膜之形成方法而且能夠不損害隔板之形成性地進行隔板及絕緣膜的同時燒結之方法,正在開發使用含有熱聚合起始劑及熱硬化性成分之絕緣糊的方法(專利文獻4)。 In addition, as a method of forming an insulating film which does not cause cracking and peeling from the substrate, and simultaneous sintering of the separator and the insulating film without impairing the formation of the separator, development using a thermal polymerization-containing polymerization is being developed. A method of insulating paste of an agent and a thermosetting component (Patent Document 4).
[專利文獻1]日本特開平11-246236號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 11-246236
[專利文獻2]日本特開2005-38824號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-38824
[專利文獻3]日本特開2008-60064號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2008-60064
[專利文獻4]日本特開2001-26477號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2001-26477
但是,習知之絕緣膜的形成方法能夠獲得表 面粗糙度小的絕緣膜、亦即微觀上平滑性高的絕緣膜,同時巨觀上在絕緣膜表面亦顯現了電極等所致之基板上的凹凸,不能獲得全體上平滑性高的絕緣膜。絕緣膜全體之凹凸的問題係起因於加熱塗布膜時在基板的凸部(例如電極形成部)上、基板的凹部(例如電極非形成部)上,塗布膜以同等的收縮率進行體積收縮。即便使用具有胺甲酸酯骨架之高伸縮性化合物和丙烯酸樹脂等之熱塑性聚合物以提升絕緣膜的柔軟性及韌性,但若凹凸的程度大,絕緣膜亦發生龜裂,故現狀為殷切期盼替代技術。 However, the conventional method for forming an insulating film can obtain a table. An insulating film having a small surface roughness, that is, an insulating film having high microscopic smoothness, and at the same time, on the surface of the insulating film, irregularities on the substrate due to electrodes or the like are also observed, and an insulating film having high overall smoothness cannot be obtained. . The problem of the unevenness of the entire insulating film is caused by the shrinkage of the coating film at the same shrinkage ratio on the convex portion (for example, the electrode forming portion) of the substrate and the concave portion (for example, the electrode non-forming portion) of the substrate when the coating film is heated. Even if a thermoplastic polymer such as a highly stretchable compound having a urethane skeleton and an acrylic resin is used to improve the flexibility and toughness of the insulating film, if the degree of unevenness is large, the insulating film is cracked, so the present state is eager. Looking forward to alternative technology.
本發明者等為了解決上述課題而重複專心研究的結果,發現以下(1)~(9)的發明。 In order to solve the above problems, the inventors of the present invention have repeated the results of intensive studies and found the following inventions (1) to (9).
(1)一種絕緣膜之形成方法,其中具備:於具有凹凸的基板上塗布含有熱聚合起始劑、熱硬化性成分及玻璃粒子的絕緣糊而獲得塗布膜的塗布步驟;加熱上述塗布膜而獲得硬化率為30~95%之半硬化膜的半硬化步驟;加熱上述半硬化膜而獲得絕緣膜的燒結步驟。 (1) A method of forming an insulating film, comprising: applying a coating film containing a thermal polymerization initiator, a thermosetting component, and glass particles to a substrate having irregularities to obtain a coating film; and heating the coating film A semi-hardening step of obtaining a semi-hardened film having a hardening rate of 30 to 95%; and a sintering step of heating the semi-cured film to obtain an insulating film.
(2)如記載於上述(1)之絕緣膜之形成方法,其中上述半硬化步驟之加熱溫度為T1、上述熱聚合起始劑之10小時半衰期溫度為T10時,滿足T10<T1≦T10+30℃的關係。 (2) The method for forming an insulating film according to (1) above, wherein the heating temperature of the semi-hardening step is T 1 and the 10-hour half-life temperature of the thermal polymerization initiator is T 10 , which satisfies T 10 <T 1 ≦T 10 +30 °C relationship.
(3)如記載於上述(2)之絕緣膜之形成方法,其中將上述半硬化步驟之加熱後的塗布膜以低於上述T1的溫度T2冷卻而獲得上述半硬化膜。 (3) The method for forming an insulating film according to (2) above, wherein the coated film after the heating in the semi-hardening step is cooled at a temperature T 2 lower than the T 1 to obtain the semi-cured film.
(4)如記載於上述(3)之絕緣膜之形成方法,其中上述T2低於上述T10。 (4) The method for forming an insulating film according to (3) above, wherein the T 2 is lower than the T 10 .
(5)如記載於上述(2)至(4)中任一項之絕緣膜之形成方法,其中上述T1的保持時間小於上述T1之上述熱聚合起始劑的半衰期。 (5) The method of forming an insulating film described in any one of the through (4) above (2), wherein the holding time of the above-described half-life of less than 1 T T 1 of the above-mentioned thermal polymerization initiator.
(6)如記載於上述(1)至(5)中任一項之絕緣膜之形成方法,其中上述熱聚合起始劑為藉由加熱成為活性自由基種的化合物,而且10小時半衰期溫度T10為60~110℃。 (6) The method for forming an insulating film according to any one of the above (1) to (5), wherein the thermal polymerization initiator is a compound which is activated to be an active radical species, and has a 10-hour half-life temperature T 10 is 60~110 °C.
(7)如記載於上述(1)至(6)中任一項之絕緣膜之形成方法,其中上述熱硬化性成分含有具有3個以上碳-碳不飽和雙鍵的化合物。 (7) The method for forming an insulating film according to any one of the above (1), wherein the thermosetting component contains a compound having three or more carbon-carbon unsaturated double bonds.
(8)如記載於上述(1)至(7)中任一項之絕緣膜之形成方法,其中上述絕緣糊之有機固體成分的碳-碳不飽和雙鍵密度為3~9mmol/g。 (8) The method for forming an insulating film according to any one of the above (1) to (7) wherein the organic solid component of the insulating paste has a carbon-carbon unsaturated double bond density of 3 to 9 mmol/g.
(9)一種電漿顯示器元件,其係具備基板、配置於該基板之上面的複數個電極對、及包覆該電極之絕緣膜的電漿顯示器元件,其中相對於上述基板上面而在垂直方向之上述絕緣膜的最大厚度為H1、相對於上述基板上面而在垂直方向之上述絕緣膜的最小厚度為H2時,滿足0.2[μm]≦H1-H2≦1.0[μm]的關係。 (9) A plasma display device comprising: a substrate; a plurality of electrode pairs disposed on the upper surface of the substrate; and a plasma display element covering the insulating film of the electrode, wherein the substrate is vertically oriented with respect to the upper surface of the substrate When the maximum thickness of the insulating film is H1 and the minimum thickness of the insulating film in the vertical direction with respect to the upper surface of the substrate is H2, the relationship of 0.2 [μm] ≦ H1 - H2 ≦ 1.0 [μm] is satisfied.
根據本發明,能夠提供一種具有所謂高耐電壓及高可見光穿透率之特性、即便當電極等所致之基板上具有凹凸時亦無龜裂或表面凹凸之平滑的絕緣膜。 According to the present invention, it is possible to provide an insulating film having a characteristic of a so-called high withstand voltage and high visible light transmittance, and having no cracks or smooth surface irregularities even when the substrate has irregularities due to an electrode or the like.
以下,雖然詳細說明本發明之較佳的實施樣態,但是本發明係不受該等限制者。 Hereinafter, the preferred embodiments of the present invention are described in detail, but the present invention is not limited thereto.
本發明之絕緣膜之形成方法,其特徵在於具備:於具有凹凸的基板上塗布含有熱聚合起始劑、熱硬化性成分及玻璃粒子的絕緣糊而獲得塗布膜的塗布步驟;加熱上述塗布膜而獲得硬化率為30~95%之半硬化膜的半硬化步驟;及加熱上述半硬化膜而獲得絕緣膜的燒結步驟。 A method of forming an insulating film according to the present invention, comprising: applying a coating film containing a thermal polymerization initiator, a thermosetting component, and glass particles to a substrate having irregularities to obtain a coating film; and heating the coating film And obtaining a semi-hardening step of a semi-hardened film having a hardening rate of 30 to 95%; and a sintering step of heating the semi-cured film to obtain an insulating film.
本發明之絕緣膜之形成方法所使用的絕緣糊需要含有熱聚合起始劑、熱硬化性成分及玻璃粒子,但亦無妨含有其它成分,例如熱塑性聚合物、可塑劑、溶劑、分散劑、勻塗劑或填充劑。作為絕緣糊之製造方法,能夠舉例將該等材料預先攪拌後以輥磨機等的分散機混練,然後進行過濾及減壓下的消泡之方法。 The insulating paste used in the method for forming an insulating film of the present invention needs to contain a thermal polymerization initiator, a thermosetting component, and glass particles, but may contain other components such as a thermoplastic polymer, a plasticizer, a solvent, a dispersant, and a uniformity. A paint or filler. As a method of producing the insulating paste, a method in which the materials are stirred in advance and then kneaded by a disperser such as a roll mill, followed by filtration and defoaming under reduced pressure can be exemplified.
作為熱聚合起始劑,以能夠藉由加熱成為活性自由基種、10小時半衰期溫度T10為40~130℃者為佳,為了確保絕緣糊之安定性並且使自由基的活性足夠,10小時半衰期溫度T10較佳為60~110℃。 As a thermal polymerization initiator, it is preferable that the active radical species can be heated to have a 10-hour half-life temperature T 10 of 40 to 130 ° C, and the stability of the insulating paste is ensured and the activity of the radical is sufficient for 10 hours. The half-life temperature T 10 is preferably from 60 to 110 °C.
所謂10小時半衰期溫度T10(以下,稱為「T10」)係指直到熱聚合起始劑之一半量分解而殘留一半量所需要的時間,亦即半衰期為10小時的溫度。T10為40℃以上則能夠維持絕緣糊之安定性,130℃以下則能夠充分發揮對於加熱溫度的活性。若T10小於40℃則引起長時間後 的增黏等而不能維持絕緣糊的安定性,若表面張力變高,則難以形成平滑性高的塗布膜。此外,若T10大於130℃則必須設定高的半硬化步驟之加熱溫度,由於絕緣糊所含有的溶劑快速地揮發,而使所獲得之半硬化膜的表面產生凹凸。 The 10-hour half-life temperature T 10 (hereinafter, referred to as "T 10 ") means a time required until one half of the thermal polymerization initiator decomposes and remains half of the amount, that is, a temperature at which the half-life is 10 hours. When T 10 is 40° C. or more, the stability of the insulating paste can be maintained, and at 130° C. or lower, the activity at the heating temperature can be sufficiently exhibited. When the T 10 is less than 40 ℃ tackifier is caused after a long time stability can not be maintained like insulating paste, if a high surface tension, it is difficult to form a coating film having high smoothness. Further, if T 10 is more than 130 ° C, the heating temperature of the high semi-hardening step must be set, and the surface of the obtained semi-cured film is uneven due to the rapid evaporation of the solvent contained in the insulating paste.
作為熱聚合起始劑係以有機過氧化物或偶氮化合物為佳。 As the thermal polymerization initiator, an organic peroxide or an azo compound is preferred.
作為T10為40~130℃的有機過氧化物,能夠舉例過氧二碳酸二異丙酯、過氧二碳酸二正丙酯、過氧二碳酸二(2-乙氧乙酯)、過氧二碳酸二(甲氧基異丙酯)、過氧二碳酸二(2-乙基己酯)、過氧二碳酸二(3-甲基-3-甲氧丁酯)、過氧新癸酸三級丁酯、過氧化2,4-二氯苯甲醯、過氧三甲基乙酸三級丁酯、過氧化3,5,5-三甲基己醯、過氧化辛醯基、過氧化癸醯基、過氧化月桂醯基、過氧化丁二酸、過氧化乙醯基、過氧(2-乙基己酸)三級丁酯、過氧化間甲苯甲醯、過氧化苯甲醯、過氧異丁酸三級丁酯、1,1-雙(三級丁基過氧基)-3,3,5-三甲基環己烷、1,1-雙(三級丁基過氧基)環己烷、過氧順丁烯二酸三級丁酯、過氧月桂酸三級丁酯、過氧3,3,5-三甲基己酸三級丁酯、過氧環己烷、過氧異丙基碳酸三級丁酯、2,5-二甲基-2,5-二(苯甲醯過氧基)己烷、2,2-雙(三級丁基過氧基)辛烷、過氧乙酸三級丁酯、2,2-雙(三級丁基過氧基)丁烷、過氧苯甲酸三級丁酯、4,4-雙(三級丁基過氧基)戊酸正丁酯、二過氧異酞酸二-三級丁酯、過氧化丁酮、α,α’-雙(三級丁基過氧異丙基)苯、過氧化二異丙苯、2,5-二甲基 -2,5-二(三級丁基過氧基)己烷、三級丁過氧異丙苯、氫過氧化二異丙苯或二-三級丁基過氧化物。 As the organic peroxide having a T 10 of 40 to 130 ° C, diisopropyl peroxydicarbonate, di-n-propyl peroxydicarbonate, di(2-ethoxyethyl) peroxydicarbonate, peroxygen can be exemplified. Di(methoxyisopropyl) dicarbonate, di(2-ethylhexyl)peroxydicarbonate, di(3-methyl-3-methoxybutyl)peroxydicarbonate, peroxy neodecanoic acid Tertiary butyl ester, 2,4-dichlorobenzhydryl peroxide, tert-butyl peroxytrimethylacetate, 3,5,5-trimethylhexyl peroxide, octanyl peroxide, cerium peroxide Base, peroxidized lauryl sulfhydryl, peroxy succinic acid, ethoxylated oxime, peroxy(2-ethylhexanoic acid) tertiary butyl ester, meta-toluene formazan, benzammonium peroxide, peroxygen Tert-butyl butyl butyrate, 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(tri-butylperoxy) Cyclohexane, peroxybutyl succinate, butyl laurate, butyl peroxy 3,3,5-trimethylhexanoate, peroxycyclohexane, Tert-butyl butyl isopropyl carbonate, 2,5-dimethyl-2,5-bis(benzhydrylperoxy)hexane, 2,2-bis(tertiary butylperoxy)octane Peracetic acid tri Butyl ester, 2,2-bis(tertiary butylperoxy)butane, butyl peroxybenzoate, n-butyl 4,4-bis(tertiary butylperoxy)pentanoate, two Di-tertiary butyl peroxyisophthalate, butanone peroxide, α,α'-bis(tri-butylperoxyisopropyl)benzene, dicumyl peroxide, 2,5-dimethyl -2,5-di(tertiary butylperoxy)hexane, tertiary butyl peroxy cumene, dicumyl hydroperoxide or di-tertiary butyl peroxide.
作為T10為40~130℃的偶氮化合物,能夠舉例2,2’-偶氮雙(2,4-二甲基戊腈)、2,2-偶氮雙異丁腈、2,2’-偶氮雙(2-甲基丁腈)、1,1-偶氮雙(環己-1-腈)、1-[(1-氰基-1-甲基乙基)偶氮]甲醯胺(2-(胺基甲醯基偶氮)異丁腈)、2,2’-偶氮雙{2-甲基-N-[1,1-雙(羥甲基)-2-羥甲基]丙醯胺}、2,2’-偶氮雙{2-甲基-N-[2-(1-羥丁基)]丙醯胺}、2,2’-偶氮雙[2-甲基-N-(2-羥乙基)丙醯胺]、2,2’-偶氮雙[N-(2-丙醯基)-2-甲基丙醯胺]、2,2’-偶氮雙(N-丁基-甲基丙醯胺)、2,2’-偶氮雙(N-環己基-2-甲基丙醯胺)、2,2’-偶氮雙[2-(5-甲基-2-咪唑啉-2-基)丙烷]二鹽酸鹽、2,2’-偶氮雙[2-(2-咪唑啉-2-基)丙烷]二鹽酸鹽或2,2’-偶氮雙[2-(5-甲基-2-咪唑啉-2-基)丙烷]二硫酸鹽二水合物。 As an azo compound having a T 10 of 40 to 130 ° C, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2-azobisisobutyronitrile, 2,2' can be exemplified. - azobis(2-methylbutyronitrile), 1,1-azobis(cyclohexan-1-carbonitrile), 1-[(1-cyano-1-methylethyl)azo]formamidine Amine (2-(aminomercaptoazo)isobutyronitrile), 2,2'-azobis{2-methyl-N-[1,1-bis(hydroxymethyl)-2-hydroxyl Benzylamine}, 2,2'-azobis{2-methyl-N-[2-(1-hydroxybutyl)]propanamine}, 2,2'-azobis[2- Methyl-N-(2-hydroxyethyl)propanamide], 2,2'-azobis[N-(2-propenyl)-2-methylpropanamide], 2,2'- Azobis(N-butyl-methylpropionamide), 2,2'-azobis(N-cyclohexyl-2-methylpropionamide), 2,2'-azobis[2- (5-methyl-2-imidazolin-2-yl)propane] dihydrochloride, 2,2'-azobis[2-(2-imidazolin-2-yl)propane] dihydrochloride or 2,2'-Azobis[2-(5-methyl-2-imidazolin-2-yl)propane]disulfate dihydrate.
熱聚合起始劑的比例相對於後述之熱硬化性成分係以1~15質量%為佳,較佳為7~12質量%。若熱聚合起始劑小於1質量%,則半硬化膜的表面會產生凹凸。此外,若熱聚合起始劑大於15質量%,則變得容易發生半硬化膜表面之熱聚合起始劑的析出或龜裂。 The ratio of the thermal polymerization initiator is preferably from 1 to 15% by mass, preferably from 7 to 12% by mass, based on the thermosetting component to be described later. When the thermal polymerization initiator is less than 1% by mass, irregularities are generated on the surface of the semi-cured film. In addition, when the thermal polymerization initiator is more than 15% by mass, precipitation or cracking of the thermal polymerization initiator on the surface of the semi-cured film is likely to occur.
作為熱硬化性成分,以具有碳-碳不飽和雙鍵的化合物(以下,稱為「化合物C」)為佳。作為化合物C,雖然能夠舉例具有乙烯基、丙烯基、(甲基)丙烯酸酯基或丙烯醯胺基的化合物,但正在開發多樣種類的化合物,以能夠根據反應性、溶解性或雙鍵當量等來適宜地 選擇之具有(甲基)丙烯酸酯基的化合物,亦即(甲基)丙烯酸酯化合物為佳。 As the thermosetting component, a compound having a carbon-carbon unsaturated double bond (hereinafter referred to as "compound C") is preferred. As the compound C, a compound having a vinyl group, a propylene group, a (meth) acrylate group or an acrylamide group can be exemplified, but various kinds of compounds are being developed to be able to be based on reactivity, solubility, double bond equivalent, and the like. Appropriately It is preferred to select a compound having a (meth) acrylate group, that is, a (meth) acrylate compound.
(甲基)丙烯酸酯化合物之中,特別在以由熱聚合起始劑所產生之活性自由基種為起始點進行熱硬化的反應速度快、能夠形成立體網狀結構的半硬化膜、而且維持半硬化膜之平滑性的效果良好的觀點而言,以具有3個以上的官能基的(甲基)丙烯酸酯化合物為佳。作為具有3個以上的官能基的(甲基)丙烯酸酯化合物,能夠舉例三羥甲基丙烷三(甲基)丙烯酸酯、乙氧化三羥甲基丙烷三(甲基)丙烯酸酯、丙氧化三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、丙氧化丙三醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、二新戊四醇羥基五(甲基)丙烯酸酯、二新戊四醇五丙烯酸酯或二新戊四醇六丙烯酸酯或者該等之環氧烷變質物。 Among the (meth) acrylate compounds, a semi-cured film which is capable of forming a three-dimensional network structure, which has a high reaction rate by using a living radical species generated by a thermal polymerization initiator as a starting point, and which is capable of forming a three-dimensional network structure. From the viewpoint of maintaining the effect of smoothing the smoothness of the semi-cured film, a (meth) acrylate compound having three or more functional groups is preferred. Examples of the (meth) acrylate compound having three or more functional groups include trimethylolpropane tri(meth) acrylate, ethoxylated trimethylolpropane tri(meth) acrylate, and propoxylated three. Hydroxymethylpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, propoxylated glycerol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, two - trimethylolpropane tetra(meth)acrylate, dipentaerythritol hydroxypenta(meth)acrylate, dipentaerythritol pentaacrylate or dipentaerythritol hexaacrylate or such rings Oxylkane metabolites.
又,亦以側鏈具有碳-碳不飽和雙鍵的聚合物作為具有碳-碳不飽和雙鍵的化合物為佳。作為該等聚合物,能夠舉例主鏈具有丙烯酸結構、胺基甲酸酯結構、聚酯結構或環氧結構、側鏈具有碳-碳雙鍵者。 Further, a polymer having a carbon-carbon unsaturated double bond in its side chain is also preferred as the compound having a carbon-carbon unsaturated double bond. As such polymers, for example, a main chain having an acrylic structure, a urethane structure, a polyester structure or an epoxy structure, and a side chain having a carbon-carbon double bond can be exemplified.
當使用化合物C作為熱硬化性成分時,絕緣糊中之有機固體成分的碳-碳不飽和雙鍵密度(以下,稱為「Y」)係以3~9mmol/g為佳,較佳為3.5~7mmol/g。若Y小於3mmol/g,則維持塗布膜之平滑性的效果小且絕緣膜的表面會產生凹凸。此外,若Y大於9mmol/g,則燒結步驟之膜的燒結收縮率變得太大,局部膜會從基板浮 起。 When the compound C is used as the thermosetting component, the carbon-carbon unsaturated double bond density (hereinafter referred to as "Y") of the organic solid component in the insulating paste is preferably 3 to 9 mmol/g, preferably 3.5. ~7mmol/g. When Y is less than 3 mmol/g, the effect of maintaining the smoothness of the coating film is small, and unevenness is generated on the surface of the insulating film. Further, if Y is more than 9 mmol/g, the sintering shrinkage rate of the film of the sintering step becomes too large, and the partial film floats from the substrate. Start.
還有,所謂絕緣糊中的有機固體成分,係指絕緣糊所含有之全部有機化合物亦即有機成分中,除去溶劑者。 In addition, the organic solid component in the insulating paste refers to an organic component which is an organic component contained in the insulating paste, and the solvent is removed.
Y係使用藉由以下算式(1)所計算之雙鍵當量Z,藉由以下之算式(2)所計算。當混合使用不同之複數種的化合物C時,藉由各個碳-碳不飽和雙鍵密度的總數來計算Y。 Y is calculated by the following formula (2) using the double bond equivalent Z calculated by the following formula (1). When a different plurality of compounds C are used in combination, Y is calculated by the total number of individual carbon-carbon unsaturated double bond densities.
Z(g/mol)=M/N‧‧‧算式(1) Z(g/mol)=M/N‧‧‧(1)
M:化合物C的分子量 M: molecular weight of compound C
N:化合物C所具有之碳-碳不飽和雙鍵數 N: the number of carbon-carbon unsaturated double bonds of compound C
Y(mol/g)=Σ(O/Z)‧‧‧算式(2) Y(mol/g)=Σ(O/Z)‧‧‧(2)
O:有機固體成分之化合物C的比例(質量%)/100 O: ratio of the compound C of the organic solid component (% by mass) / 100
相對於絕緣糊中之全部無機成分的化合物C的體積比係以0.5~1.5為佳,較佳為0.6~1.2。若化合物C的體積比小於0.5,則絕緣膜的表面會產生凹凸。此外,若化合物C的體積比大於1.5,則局部膜會從基板浮起。還有,所謂絕緣糊中的全部無機成分係可指絕緣糊所含有的全部無機化合物,其中亦包含玻璃粒子。 The volume ratio of the compound C to all the inorganic components in the insulating paste is preferably from 0.5 to 1.5, more preferably from 0.6 to 1.2. If the volume ratio of the compound C is less than 0.5, irregularities are generated on the surface of the insulating film. Further, if the volume ratio of the compound C is more than 1.5, the partial film floats from the substrate. In addition, all the inorganic components in the insulating paste may refer to all inorganic compounds contained in the insulating paste, and also include glass particles.
本發明之絕緣膜之形成方法所使用的絕緣糊,亦以含有熱塑性聚合物為佳。作為熱塑性聚合物,能夠舉例纖維素系樹脂或丙烯酸系樹脂。熱塑性聚合物的比例相對於100質量份玻璃粒子係以1~40質量份為佳,較佳為2~20質量份。作為纖維素系樹脂,能夠舉例乙基纖維素、羥乙基纖維素、甲基纖維素或羧甲基纖維素, 但從玻璃粒子的分散性良好、能夠賦予絕緣糊於網版印刷或整體塗布法之較佳塗布性、而且燒結步驟容易快速熱分解而揮發而言,以乙基纖維素為佳。作為丙烯酸系樹脂,以丙烯酸或丙烯酸烷基酯類或者甲基丙烯酸或甲基丙烯酸烷基酯類的單聚物或者共聚物為佳。較具體而言,以例如聚丙烯酸、聚甲基丙烯酸、聚丙烯酸甲酯、聚丙烯酸乙酯、聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯、聚甲基丙烯酸丙酯、聚甲基丙烯酸丁酯或聚甲基丙烯酸己酯的單聚物或者共聚物為佳。 The insulating paste used in the method for forming an insulating film of the present invention preferably contains a thermoplastic polymer. As the thermoplastic polymer, a cellulose resin or an acrylic resin can be exemplified. The proportion of the thermoplastic polymer is preferably from 1 to 40 parts by mass, more preferably from 2 to 20 parts by mass, per 100 parts by mass of the glass particles. As the cellulose resin, ethyl cellulose, hydroxyethyl cellulose, methyl cellulose or carboxymethyl cellulose can be exemplified. However, ethyl cellulose is preferred because the dispersibility of the glass particles is good, and the coating property of the insulating paste in the screen printing or the overall coating method can be imparted, and the sintering step is easily and thermally decomposed and volatilized. As the acrylic resin, a monomer or copolymer of acrylic acid or alkyl acrylate or methacrylic acid or alkyl methacrylate is preferred. More specifically, for example, polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polymethyl methacrylate, polyethyl methacrylate, polypropyl methacrylate, polymethacrylic acid A monomer or copolymer of butyl ester or polyhexyl methacrylate is preferred.
本發明之絕緣膜之形成方法所使用的絕緣糊,亦無妨含有溶劑。此處所謂溶劑,係指以半硬化步驟的加熱溫度及加熱時間揮發60質量%以上的液狀成分。溶劑係以調整絕緣糊之黏度、對於所選擇的塗布方法獲得較佳的流動性為目的而被使用,但需要比較容易以半硬化步驟之加熱溫度及加熱時間揮發。作為溶劑,能夠舉例萜品醇、二乙二醇丁醚醋酸酯、二乙二醇單苯醚醋酸酯、2,2,4-三甲基-1,3-戊二醇單異丁酸酯、丁基卡必醇乙酸酯、丁卡必醇、γ-丁內酯、乙酸丁賽璐蘇、乙酸賽璐蘇、丁賽璐蘇、甲氧基乙酸丁酯或乙酸正丁酯或者該等的混合物。絕緣糊中的溶劑比例係以20~60質量%為佳,較佳為20~40質量%。 The insulating paste used in the method for forming an insulating film of the present invention may contain a solvent. The term "solvent" as used herein means a liquid component which volatilizes by 60% by mass or more in the heating temperature and heating time of the semi-hardening step. The solvent is used for the purpose of adjusting the viscosity of the insulating paste and obtaining better fluidity for the selected coating method, but it is relatively easy to volatilize at the heating temperature and heating time of the semi-hardening step. As the solvent, terpineol, diethylene glycol butyl ether acetate, diethylene glycol monophenyl ether acetate, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate can be exemplified. , butyl carbitol acetate, butyl carbitol, γ-butyrolactone, butyl acesulfame acetate, celecoxib acetate, butyl acesulfame, butyl methoxyacetate or n-butyl acetate or a mixture thereof. The proportion of the solvent in the insulating paste is preferably 20 to 60% by mass, preferably 20 to 40% by mass.
本發明之絕緣膜之形成方法所使用的絕緣糊,亦無妨含有可塑劑。可塑劑係以半硬化膜之平滑性提升為目的而被使用。可塑劑係以充分高於半硬化步驟之加熱溫度T1的沸點、實質上在半硬化步驟不揮發者為佳 。作為可塑劑,能夠舉例鄰苯二甲酸丁芐酯、鄰苯二甲酸二辛酯、鄰苯二甲酸二異辛酯、鄰苯二甲酸二癸酯、鄰苯二甲酸二丁酯或鄰苯二甲酸異癸酯或者該等之混合物。絕緣糊中的可塑劑比例係以0.5~10質量%為佳,較佳為1~5質量%。若可塑劑的比例小於0.5質量%,則產生局部進行溶劑揮發的部位,容易使半硬化膜的平滑性惡化。此外,若可塑劑的比例大於10質量%,則與熱塑性聚合物或熱硬化性成分的相溶性不足,而變得容易使半硬化膜的平滑性惡化。 The insulating paste used in the method for forming an insulating film of the present invention may contain a plasticizer. The plasticizer is used for the purpose of improving the smoothness of the semi-hardened film. The plasticizer is preferably sufficiently higher than the boiling point of the heating temperature T 1 of the semi-hardening step, and is substantially non-volatile in the semi-hardening step. As the plasticizer, butyl benzyl phthalate, dioctyl phthalate, diisooctyl phthalate, dinonyl phthalate, dibutyl phthalate or phthalate can be exemplified. Isodecyl methacrylate or a mixture of these. The proportion of the plasticizer in the insulating paste is preferably 0.5 to 10% by mass, preferably 1 to 5% by mass. When the proportion of the plasticizer is less than 0.5% by mass, a portion where the solvent is volatilized locally is generated, and the smoothness of the semi-cured film is easily deteriorated. In addition, when the proportion of the plasticizer is more than 10% by mass, the compatibility with the thermoplastic polymer or the thermosetting component is insufficient, and the smoothness of the semi-cured film is easily deteriorated.
作為本發明之絕緣膜之形成方法所使用的絕緣糊所含有的玻璃粒子,雖然能夠使用例如以選自包含ZnO2、B2O3、Bi2O3、SiO2及PbO之群組的成分為主成分的玻璃粒子,但是由於現今環境負荷物質之使用削減運動,則以無鉛玻璃粒子為佳。此處所謂主成分係指以質量%而言包含最多的成分。特別地,含有TiO2、及再者選自包含CuO、MoO3、CeO2、MnO2及CoO之群組的成分二者、由以下之組成比表示的ZnO-B2O3系無鉛玻璃粒子,因不易引起因與電極之反應所導致的黃變、透明性良好、而且於600℃以下之溫度獲得良好的燒結性而佳。 As the glass particles contained in the insulating paste used in the method for forming an insulating film of the present invention, for example, a component selected from the group consisting of ZnO 2 , B 2 O 3 , Bi 2 O 3 , SiO 2 and PbO can be used. Although it is a glass particle which is a main component, it is preferable to use a lead-free glass particle by the use of the environmental load material. The term "main component" as used herein means a component which contains the most in mass %. In particular, ZnO-B 2 O 3 -based lead-free glass particles containing TiO 2 and further selected from the group consisting of CuO, MoO 3 , CeO 2 , MnO 2 and CoO, represented by the following composition ratio It is preferable that the yellowing due to the reaction with the electrode is not easily caused, the transparency is good, and the sinterability is good at a temperature of 600 ° C or lower.
ZnO:25~55質量%(28~50質量%) ZnO: 25 to 55 mass% (28 to 50 mass%)
B2O3:10~40質量%(15~35質量%) B 2 O 3 : 10 to 40% by mass (15 to 35 mass%)
ZnO+B2O3:46~80質量%(49~75質量%) ZnO+B 2 O 3 : 46~80% by mass (49~75% by mass)
SiO2:1~20質量%(3~18質量%) SiO 2 : 1 to 20% by mass (3 to 18% by mass)
Bi2O3:0~50質量%(1~30質量%) Bi 2 O 3 : 0 to 50% by mass (1 to 30% by mass)
Li2O:0~8質量%(0~5質量%) Li 2 O: 0 to 8 mass% (0 to 5 mass%)
Na2O:0~10質量%(0~7質量%) Na 2 O: 0 to 10% by mass (0 to 7% by mass)
K2O:0~15質量%(0~13質量%) K 2 O: 0 to 15% by mass (0 to 13% by mass)
Li2O+Na2O+K2O:0~15質量%(0.1~13質量%) Li 2 O+Na 2 O+K 2 O: 0 to 15% by mass (0.1 to 13% by mass)
MgO:0~20質量%(0~17質量%) MgO: 0 to 20% by mass (0 to 17% by mass)
CaO:0~20質量%(0~17質量%) CaO: 0 to 20% by mass (0 to 17% by mass)
SrO:0~20質量%(0~17質量%) SrO: 0 to 20% by mass (0 to 17% by mass)
BaO:0~20質量%(0~17質量%) BaO: 0 to 20% by mass (0 to 17% by mass)
MgO+CaO+SrO+BaO:0~25質量%(0~20質量%) MgO+CaO+SrO+BaO: 0~25% by mass (0~20% by mass)
TiO2:0.3~10質量%(0.5~8質量%) TiO 2 : 0.3 to 10% by mass (0.5 to 8 mass%)
CuO:0.01~0.3質量%(0.05~2.5質量%) CuO: 0.01 to 0.3% by mass (0.05 to 2.5% by mass)
CuO+MoO3+CeO2+MnO2+CoO:0.01~6質量%(0.01~質量5%) CuO+MoO 3 +CeO 2 +MnO 2 +CoO: 0.01 to 6% by mass (0.01 to 5% by mass)
玻璃粒子係為了降低絕緣膜中的氣泡,以使用平均粒徑D50為3.0μm以下,且最大粒徑Dmax為20μm以下者為佳。 In order to reduce bubbles in the insulating film, the glass particles are preferably used in an average particle diameter D 50 of 3.0 μm or less and a maximum particle diameter D max of 20 μm or less.
絕緣糊中之其它成分的比例,個別以分散劑為0~3質量%、勻塗劑為0~1質量%、填充劑為0~3質量%為佳。 The proportion of the other components in the insulating paste is preferably 0 to 3% by mass of the dispersant, 0 to 1% by mass of the leveling agent, and 0 to 3% by mass of the filler.
所謂本發明之絕緣膜之形成方法的塗布步驟,係指在具有凹凸之基板上塗布絕緣糊而獲得塗布膜的步驟。此處所謂基板係指包含玻璃或陶瓷等的板材。 The coating step of the method for forming an insulating film of the present invention refers to a step of applying an insulating paste to a substrate having irregularities to obtain a coating film. The term "substrate" as used herein refers to a plate material containing glass or ceramics.
根據本發明,無論基板上的凹凸,均能夠形成平滑性高的絕緣膜。本發明之絕緣膜之形成方法係以 使用於基板上之凹凸在高低落差為1~20μm、間距為1~1000μm的範圍時為佳,較佳為使用於高低落差為1~7μm、間距為50~500μm的範圍時。 According to the present invention, an insulating film having high smoothness can be formed regardless of the unevenness on the substrate. The method for forming the insulating film of the present invention is The unevenness on the substrate is preferably in the range of 1 to 20 μm in height and 1 to 1000 μm in pitch, and is preferably used in the range of 1 to 7 μm in height and 50 to 500 μm in pitch.
作為於基板上塗布絕緣糊的方法,雖然能夠舉出使用棒塗布機、輥塗布機、狹縫式模塗布機或刮刀式塗布機的整體塗布法或網版印刷法,但是從塗布次數少而言,以整體塗布法為佳,從平面不均少且塗布膜厚精度高而言,較佳為使用狹縫式模塗布機的整體塗布法。尚且,絕緣糊的黏度等若適當,則能夠獲得整體平滑性高的塗布膜。 As a method of applying an insulating paste to a substrate, an integral coating method or a screen printing method using a bar coater, a roll coater, a slit die coater, or a knife coater can be used, but the number of times of application is small. In other words, the overall coating method is preferred, and from the viewpoint of less unevenness in the plane and high coating film thickness accuracy, an overall coating method using a slit die coater is preferred. Further, if the viscosity of the insulating paste or the like is appropriate, a coating film having high overall smoothness can be obtained.
塗布步驟所獲得的塗布膜厚度雖可考慮之後步驟的收縮等以適宜地決定,但為了確保絕緣性及平滑性,以將藉由燒結步驟所獲得的絕緣膜厚度調整成5~100μm為佳,較佳為調整成20~60μm。還有,當基板上形成有電極時,以個別將基板之凸部(電極形成部)的塗布膜厚度調整成30~150μm、基板之凹部(電極非形成部)的塗布膜厚度調整成31~170μm為佳。 The thickness of the coating film obtained in the coating step can be appropriately determined in consideration of the shrinkage of the subsequent step, etc., but in order to ensure insulation and smoothness, it is preferable to adjust the thickness of the insulating film obtained by the sintering step to 5 to 100 μm. It is preferably adjusted to 20 to 60 μm. Further, when an electrode is formed on the substrate, the thickness of the coating film of the convex portion (electrode forming portion) of the substrate is individually adjusted to 30 to 150 μm, and the thickness of the coating film of the concave portion (electrode non-forming portion) of the substrate is adjusted to 31~ 170 μm is preferred.
所謂本發明之絕緣膜之形成方法的半硬化步驟,係指將塗布步驟所獲得的塗布膜以溫度T1加熱,然後冷卻至溫度T2,獲得硬化率為30~95%之半硬化膜的步驟。 The semi-hardening step of the method for forming an insulating film of the present invention means that the coating film obtained by the coating step is heated at a temperature T 1 and then cooled to a temperature T 2 to obtain a semi-cured film having a hardening rate of 30 to 95%. step.
藉由以溫度T1(以下稱為「T1」)加熱塗布膜,進行熱硬化,能夠增大塗布膜的黏度而維持塗布膜的平坦形狀,抑制半硬化膜表面產生凹凸。 By heating the coating film at a temperature T 1 (hereinafter referred to as "T 1 ") and performing thermal curing, the viscosity of the coating film can be increased to maintain the flat shape of the coating film, and unevenness on the surface of the semi-cured film can be suppressed.
作為以T1加熱的方法,從能夠均勻地加熱塗 布膜而言,以IR照射型乾燥機為佳。尚且,亦無妨將塗布膜置入已預先升溫至T1之乾燥機而開始加熱,或亦無妨將塗布膜置入常溫之乾燥機後再開始加熱,階段地或連續地升溫。雖然T1係根據熱聚合起始劑的種類以適宜地決定,但是步驟管理上以40℃<T1≦140℃的範圍為佳,較佳為60℃<T1≦120℃的範圍。 As to a method of heating T 1, the coating film can be uniformly heated, the drying machine in order to better IR irradiation. Yet, it is harmless to the coating film into pre-warmed to T 1 and the start of the dryer is heated, or the coated film is harmless at room temperature into a dryer after the start of heating, raising the temperature stepwise or continuously. Although T 1 is suitably determined depending on the kind of the thermal polymerization initiator, the step management is preferably in the range of 40 ° C < T 1 ≦ 140 ° C, preferably 60 ° C < T 1 ≦ 120 ° C.
T1及上述的T10係以滿足以下算式(3)之關係為佳,較佳為滿足以下算式(4)之關係。尚且,當混合使用10小時半衰期不同的多種熱聚合起始劑時,能夠藉由加權平均以計算T10。 T 1 and the above T 10 are preferably in a relationship satisfying the following formula (3), and preferably satisfy the relationship of the following formula (4). Further, when a plurality of kinds of thermal polymerization initiators having different half-lives of 10 hours are used in combination, T 10 can be calculated by weighted averaging.
T10<T1≦T10+30℃‧‧‧算式(3) T 10 <T 1 ≦T 10 +30°C‧‧‧(3)
T10<T1≦T10+10℃‧‧‧算式(4) T 10 <T 1 ≦T 10 +10°C‧‧‧(4)
若T1小於T10,則不能促進聚合起始劑與熱硬化性成分的熱硬化,半硬化膜的表面會產生凹凸。此外,若T1大於T10+30℃,則熱聚合起始劑的分解速度變得過度快速,不僅難以控制半硬化膜的硬化率,而且半硬化膜內會發生硬化程度不均。 When T 1 is less than T 10 , thermal curing of the polymerization initiator and the thermosetting component cannot be promoted, and irregularities are generated on the surface of the semi-cured film. Further, when T 1 is larger than T 10 + 30 ° C, the decomposition rate of the thermal polymerization initiator becomes excessively fast, and it is difficult to control not only the hardening rate of the semi-cured film but also the degree of hardening in the semi-cured film.
加熱溫度從到達T1直到開始冷卻的時間,亦即T1的維持時間(以下,稱為「t1」),以小於T1之熱聚合起始劑的半衰期為佳,較佳為0.5~3小時。若t1為半衰期以上,則容易產生凹凸或龜裂。尚且,即使當加熱溫度暫時超出T1以外時,若為T1±5℃的範圍,亦能夠被視為誤差範圍而繼續為t1者。 The heating temperature is from the time of reaching T 1 until the start of cooling, that is, the holding time of T 1 (hereinafter referred to as "t 1 "), and the half life of the thermal polymerization initiator smaller than T 1 is preferably 0.5~, preferably 0.5~ 3 hours. When t 1 is a half life or more, irregularities or cracks are likely to occur. Yet, even when the heating temperature exceeds Buyer than T 1, if the range of T 1 ± 5 ℃, also can be regarded as an error range of t 1 are continued.
能夠藉由從以T1加熱塗布膜開始,冷卻至低於T1的溫度T2(以下,稱為「T2」),獲得硬化率為30~95% 的半硬化膜。藉由冷卻至T2,可抑制活性自由基種之添加發生。此外,若以省略T2的冷卻而進行燒結步驟,則熱硬化進行會失控,所獲得的絕緣膜表面會產生龜裂。 T 1 is possible by heating the coating film at the start, cooled below the temperature T 1 T 2 (hereinafter referred to as "T 2") to obtain hardening of 30 to 95% of a semi-cured film. By cooling to T 2 , the addition of active radical species can be inhibited from occurring. Further, if the sintering step is performed by omitting the cooling of T 2 , the thermal curing progresses out of control, and cracks are formed on the surface of the obtained insulating film.
T2係為了充分地抑制活性自由基種的添加發生,以低於T10為佳。若能夠適宜地設定冷卻速度或時間而使所獲得之半硬化膜的硬化率成為30~95%的範圍即可,但所獲得之半硬化膜的硬化率以成為50~93%的範圍為佳。半硬化膜的硬化率X係藉由使用已在塗布步驟塗布於基板上之絕緣糊而形成模型塗布膜,將其以與半硬化步驟相同條件(溫度及時間)進行加熱及冷卻,計算所獲得之模型半硬化膜的硬化率而決定。較具體而言,鑽石製之ATR(Attenuated Total Reflectance)結晶的加熱檯上形成膜厚100μm×長1mm×寬1mm大小的模型塗布膜,藉由紅外分光分析法之in-situ測定,求出模型塗布膜、模型半硬化膜及完全硬化膜的個別熱硬化性成分來源之碳-碳不飽和雙鍵的C=C伸縮振動的尖峰強度(以下,稱為「S」),能夠將已藉由以下算式(5)所計算的X決定作為半硬化膜的硬化率。 In order to sufficiently suppress the occurrence of the addition of the active radical species, the T 2 system is preferably lower than T 10 . If the cooling rate or time can be appropriately set, the hardening rate of the obtained semi-cured film may be in the range of 30 to 95%, but the hardening rate of the obtained semi-cured film is preferably in the range of 50 to 93%. . The hardening rate X of the semi-hardened film is formed by using an insulating paste which has been applied to the substrate in the coating step to form a mold coating film, which is heated and cooled under the same conditions (temperature and time) as the semi-hardening step, and is calculated and obtained. The hardening rate of the model semi-hardened film is determined. More specifically, a model coating film having a thickness of 100 μm × a length of 1 mm × a width of 1 mm is formed on a heating table of ATR (Attenuated Total Reflectance) crystal, and the model is obtained by in-situ measurement by infrared spectroscopic analysis. The peak intensity (hereinafter referred to as "S") of the C=C stretching vibration of the carbon-carbon unsaturated double bond derived from the individual thermosetting component of the coating film, the model semi-cured film, and the fully cured film can be used The X calculated by the following formula (5) determines the hardening rate of the semi-hardened film.
X(%)=(S0-Sx)/(S0-S100)×100‧‧‧算式(5) X(%)=(S 0 -S x )/(S 0 -S 100 )×100‧‧‧ Equation (5)
S0:模型塗布膜的S S 0 : model coated film S
S100:完全硬化膜的S S 100 : S of fully cured film
Sx:模型半硬化膜的S S x : model semi-hardened film S
此處所謂完全硬化膜係指以T10+80℃、該溫度之熱聚合起始劑的半衰期的1000倍的時間、常壓下加熱模型塗布膜所獲得之膜。 The term "completely cured film" as used herein refers to a film obtained by heating a mold coating film under normal pressure at a time of 1000 times the half-life of the thermal polymerization initiator at T 10 + 80 ° C.
若半硬化膜的硬化率小於30%,則因藉由熱硬化之平坦形狀的維持效果小而使抑制凹凸的效果變不足。此外,若半硬化膜的硬化率大於95%,則半硬化膜失去韌性,在之後的燒結步驟之電極形成部等之膜的厚度薄的部分會因局部收縮應力偏差而產生龜裂。 When the hardening rate of the semi-hardened film is less than 30%, the effect of suppressing unevenness is insufficient because the effect of maintaining the flat shape by thermal hardening is small. In addition, when the hardening rate of the semi-hardened film is more than 95%, the semi-cured film loses toughness, and cracks are generated in a portion where the thickness of the film such as the electrode forming portion in the subsequent sintering step is small due to the variation in local shrinkage stress.
還有,半硬化步驟後,未揮發而殘留於半硬化膜中的溶劑量,相對於半硬化膜的全體積,以0~40體積%為佳,較佳為0~20體積%。若所殘留的溶劑量大於40體積%,則絕緣膜表面會產生凹凸。 Further, the amount of the solvent remaining in the semi-cured film which is not volatilized after the semi-hardening step is preferably from 0 to 40% by volume, preferably from 0 to 20% by volume, based on the total volume of the semi-cured film. If the amount of the residual solvent is more than 40% by volume, irregularities are formed on the surface of the insulating film.
所謂本發明之絕緣膜之形成方法的燒結步驟,係指加熱半硬化步驟所獲得的半硬化膜而獲得絕緣膜的步驟。燒結步驟大致區分為將半硬化膜中之有機成分熱分解、除去的前加熱過程、與燒結玻璃粒子等的燒結過程。 The sintering step of the method for forming an insulating film of the present invention refers to a step of obtaining a semi-cured film obtained by the semi-hardening step to obtain an insulating film. The sintering step is roughly classified into a pre-heating process of thermally decomposing and removing the organic component in the semi-hardened film, and a sintering process with the sintered glass particles or the like.
用於半硬化膜中的有機成分之熱分解、除去的加熱,係以300~450℃進行5~30分鐘為佳。若加熱溫度小於300℃,則有機成分之除去變得不充分,絕緣膜中的氣泡增加。此外,若加熱溫度大於450℃,引起激烈之因有機成分之熱分解、除去所致的體積收縮,絕緣膜變得容易產生龜裂。 The heating for thermal decomposition and removal of the organic component in the semi-hardened film is preferably carried out at 300 to 450 ° C for 5 to 30 minutes. When the heating temperature is less than 300 ° C, the removal of the organic component is insufficient, and the bubbles in the insulating film are increased. Further, when the heating temperature is more than 450 ° C, the volume shrinkage due to thermal decomposition and removal of the organic component is caused, and the insulating film is likely to be cracked.
用於玻璃粒子等之燒結的加熱係以於500~600℃進行5~15分鐘為佳,較佳為於玻璃粒子的軟化點以上的溫度進行5~15分鐘。若用於燒結之加熱溫度過高於玻璃粒子的軟化點,同時加熱時間變得過長,則基板變形,同時基板或電極等的元件、與絕緣膜中的成分會 進行反應。 The heating system for sintering the glass particles or the like is preferably carried out at 500 to 600 ° C for 5 to 15 minutes, preferably at a temperature equal to or higher than the softening point of the glass particles for 5 to 15 minutes. If the heating temperature for sintering is too high than the softening point of the glass particles, and the heating time becomes too long, the substrate is deformed, and the components such as the substrate or the electrode and the components in the insulating film are Carry out the reaction.
在本發明之絕緣膜之形成方法的燒結步驟,當基板上形成有電極時,由於基板之凸部(電極形成部)的半硬化膜的燒結收縮率大幅高於基板之凹部(電極非形成部)的半硬化膜的燒結收縮率,故能夠獲得全體平滑性高的絕緣膜。隨著部位的燒結收縮率的差異,係根據從基板之凸部(電極形成部)至基板之凹部(電極非形成部)的質量傳遞。其原理雖不明確,但是認為在將有機成分熱分解、除去的過程,一旦有機成分軟化或液狀化,黏度以大幅下降的狀態而消失,另一方面推測因為藉由半硬化而故意殘留之未反應的熱硬化性成分熱硬化,能夠藉由將膜全體增黏而提高表面張力,而維持半硬化膜的平坦形狀而直接輸送至燒結過程。 In the sintering step of the method for forming an insulating film of the present invention, when an electrode is formed on a substrate, the sintering shrinkage rate of the semi-hardened film of the convex portion (electrode forming portion) of the substrate is significantly higher than that of the concave portion of the substrate (electrode non-forming portion) The semi-cured film has a sintering shrinkage ratio, so that an insulating film having high overall smoothness can be obtained. The difference in the sintering shrinkage ratio of the portion is based on the mass transfer from the convex portion (electrode forming portion) of the substrate to the concave portion (electrode non-forming portion) of the substrate. Although the principle is not clear, it is considered that in the process of thermally decomposing and removing the organic component, once the organic component is softened or liquefied, the viscosity is largely reduced, and on the other hand, it is presumed to be intentionally left by semi-hardening. The unreacted thermosetting component is thermally cured, and the surface tension can be increased by thickening the entire film, and the flat shape of the semi-cured film can be maintained and directly transferred to the sintering process.
如以上本發明之絕緣膜之形成方法係因在基板上形成有電極等、具有凹凸之基板上形成絕緣膜而佳。 As described above, the method for forming an insulating film of the present invention is preferably formed by forming an insulating film on a substrate having electrodes or the like formed on the substrate.
本發明之電漿顯示器元件為具備基板、配置於該基板上面之複數個電極對、及包覆該電極的絕緣膜的電漿顯示器元件,其特徵在於:在相對於上述基板上面垂直方向之上述絕緣膜的最大厚度為H1、相對於上述基板上面垂直方向之上述絕緣膜的最小厚度為H2時,滿足0.2[μm]≦H1-H2≦1.0[μm]的關係。還有,較佳為H1及H2滿足0.2[μm]≦H1-H2≦0.5[μm]的關係。 A plasma display device of the present invention is a plasma display device including a substrate, a plurality of electrode pairs disposed on the substrate, and an insulating film covering the electrode, wherein the above is perpendicular to the upper surface of the substrate When the maximum thickness of the insulating film is H1 and the minimum thickness of the insulating film in the direction perpendicular to the upper surface of the substrate is H2, the relationship of 0.2 [μm] ≦ H1 - H2 ≦ 1.0 [μm] is satisfied. Further, it is preferable that H1 and H2 satisfy the relationship of 0.2 [μm] ≦ H1 - H2 ≦ 0.5 [μm].
當本發明之電漿顯示器元件為電漿顯示器前面板(以下,稱為「前面板」)時,若H1-H2為0.2μm以上,則藉由排氣效率的改善而提升生產效率,且藉由良好 的誘發放電(priming discharge)而降低消耗電力。此外,若為1.0μm以下,則與背面板的間隙變得均勻且小,由於大幅降低干擾(cross-talk)現象而能夠穩定放電,故顯著提高可靠性。再者,由於大幅減低干擾現象,相鄰電極間距離變小而使開口部變寬,能夠顯著提升亮度。 When the plasma display device of the present invention is a plasma display front panel (hereinafter referred to as a "front panel"), if H1-H2 is 0.2 μm or more, the production efficiency is improved by the improvement of exhaust efficiency, and By good The priming discharge reduces power consumption. In addition, when the thickness is 1.0 μm or less, the gap with the back surface plate becomes uniform and small, and the discharge can be stably stabilized by greatly reducing the cross-talk phenomenon, so that the reliability is remarkably improved. Further, since the interference phenomenon is greatly reduced, the distance between adjacent electrodes is reduced, and the opening portion is widened, whereby the brightness can be remarkably improved.
當本發明之電漿顯示器元件為電漿顯示器背面板(以下,稱為「背面板」)時,若H1-H2為0.2μm以上,則能夠抑制形成於絕緣膜上的隔板傾倒。此外,若為1.0μm以下,則能夠藉由防止因過度之凹凸所導致在絕緣膜的應力集中,而抑制絕緣膜所產生的龜裂。 When the plasma display device of the present invention is a plasma display back panel (hereinafter referred to as "back panel"), if H1-H2 is 0.2 μm or more, it is possible to suppress the separator formed on the insulating film from falling. In addition, when it is 1.0 μm or less, it is possible to prevent cracking of the insulating film by suppressing stress concentration in the insulating film due to excessive unevenness.
絕緣膜表面的平滑性係能夠藉由雷射顯微鏡以進行評估。較具體而言,能夠使用雷射顯微鏡(VK-9700;Keyence股份有限公司製),在平面100處以50倍的倍率測定絕緣膜表面的電極上的部分(電極之寬方向約略中央部分)及無電極部分(相鄰電極間約略中央部分)的高低落差,藉由計算其平均值以進行定量評估。該平均值能夠直接作為上述「H1-H2」的值。還有,當產生龜裂時,測定無龜裂處,當全面產生龜裂時,則不能進行測定。 The smoothness of the surface of the insulating film can be evaluated by a laser microscope. More specifically, a portion on the electrode on the surface of the insulating film (approximately the central portion in the width direction of the electrode) and none of the surface of the insulating film can be measured at a magnification of 50 times at a plane 100 using a laser microscope (VK-9700; manufactured by Keyence Corporation). The height difference of the electrode portions (approximately the central portion between adjacent electrodes) was quantitatively evaluated by calculating the average value thereof. This average value can be directly used as the value of the above "H1-H2". Further, when cracks were generated, no cracks were measured, and when cracks were generated in total, measurement was impossible.
絕緣膜表面的缺陷係能夠藉由以雷射顯微鏡(倍率為50倍)觀察龜裂或氣泡的個數來評估。 The defect on the surface of the insulating film can be evaluated by observing the number of cracks or bubbles by a laser microscope (magnification: 50 times).
以下顯示前面板之製造方法之一範例。首先,在玻璃基板上濺鍍氧化銦錫(以下,稱為「ITO」),藉由光蝕刻法(photo-etching)形成透明電極。在已形成透明電極的玻璃基板上,印刷用於形成黑色電極的感光性黑 色電極糊而形成塗布膜,再者塗布導電性之高感光性白色電極糊而形成雙層的塗布膜。將所獲得的雙層塗布膜一起進行曝光及顯像,形成長條狀的匯流排電極圖案。能夠藉由將所獲得之匯流排電極圖案進行燒結而形成將其包覆的絕緣膜,進而獲得前面板。還有根據需要,亦無妨形成用於提升對比之以黑色長條或黑色矩陣、或MgO等為主成分的保護膜。 An example of the manufacturing method of the front panel is shown below. First, indium tin oxide (hereinafter referred to as "ITO") is sputtered on a glass substrate, and a transparent electrode is formed by photo-etching. Printing a photosensitive black for forming a black electrode on a glass substrate on which a transparent electrode has been formed A coating film was formed by coloring the electrode paste, and a highly conductive photosensitive white electrode paste was applied to form a two-layer coating film. The obtained two-layer coating film was exposed and developed together to form an elongated bus bar electrode pattern. The front panel can be obtained by sintering the obtained bus bar electrode pattern to form an insulating film covering the bus bar electrode pattern. Further, as needed, it is also possible to form a protective film mainly composed of a black strip or a black matrix or MgO for enhancing contrast.
作為玻璃基板,能夠舉例鈉玻璃或電漿顯示器面板用的耐熱玻璃(PP8或PP9(日本電氣硝子股份有限公司製)或PD200(旭硝子股份有限公司製))。用於形成黑色電極之糊,雖然以有機黏結劑、黑色顏料及導電性粉末為主成分,但是當以光微影法形成圖案時,可使用感光性的有機化合物作為有機黏結劑。作為黑色顏料,以金屬氧化物為佳。作為金屬氧化物,雖然能夠舉例鈦黑或銅、鐵、錳或鈷的金屬氧化物,但是因燒結後的褪色少,而以鈷的金屬氧化物為佳。作為導電性粉末,能夠舉例金屬粉末或金屬氧化物粉末。作為金屬粉末,能夠舉例金、銀、銅或鎳。 As the glass substrate, heat-resistant glass (PP8 or PP9 (manufactured by Nippon Electric Glass Co., Ltd.) or PD200 (manufactured by Asahi Glass Co., Ltd.)) for soda glass or a plasma display panel can be exemplified. The paste for forming a black electrode is mainly composed of an organic binder, a black pigment, and a conductive powder. However, when a pattern is formed by photolithography, a photosensitive organic compound can be used as the organic binder. As the black pigment, a metal oxide is preferred. As the metal oxide, although titanium black or a metal oxide of copper, iron, manganese or cobalt can be exemplified, a metal oxide of cobalt is preferred because of little fading after sintering. As the conductive powder, a metal powder or a metal oxide powder can be exemplified. As the metal powder, gold, silver, copper or nickel can be exemplified.
由於黑色電極為高電阻,上述的製法範例係塗布有較低電阻率的白色電極糊。作為白色電極糊,能夠舉例以銀為主成分者。燒結後的黑色電極及燒結後的白色電極的膜厚均以1~7μm為佳。又,燒結後之二電極的線寬以20~100μm為佳,間距以1~1000μm為佳。又,絕緣膜的厚度以5~100μm為佳。作為絕緣膜的形成方法,係以使用本發明之絕緣膜之形成方法為佳。 Since the black electrode is high in electrical resistance, the above-described manufacturing method is coated with a white electrode paste having a lower electrical resistivity. As the white electrode paste, silver may be used as a main component. The film thickness of the black electrode after sintering and the white electrode after sintering is preferably 1 to 7 μm. Further, the line width of the two electrodes after sintering is preferably 20 to 100 μm, and the pitch is preferably 1 to 1000 μm. Further, the thickness of the insulating film is preferably 5 to 100 μm. As a method of forming the insulating film, a method of forming the insulating film of the present invention is preferred.
以下顯示背面板之製造方法之一範例。首先,玻璃基板上形成長條狀的電極圖案,並形成包覆其之絕緣膜。於已形成電極圖案及絕緣膜的玻璃基板上,塗布用於形成隔板的感光性隔板糊而形成塗布膜,將其乾燥然後進行曝光及顯像,形成格子狀等的隔板圖案。將所獲得之電極圖案、絕緣膜及隔板圖案以570~620℃的溫度進行燒結10~60分鐘,再者能夠藉由形成螢光體而獲得背面板。 An example of a method of manufacturing a back panel is shown below. First, an elongated electrode pattern is formed on a glass substrate, and an insulating film covering the same is formed. A photosensitive separator paste for forming a separator is applied onto a glass substrate on which an electrode pattern and an insulating film have been formed to form a coating film, which is dried and then exposed and developed to form a separator pattern such as a lattice. The obtained electrode pattern, insulating film, and separator pattern are sintered at a temperature of 570 to 620 ° C for 10 to 60 minutes, and a back sheet can be obtained by forming a phosphor.
作為長條狀之電極圖案的形成方法,能夠舉例感光性糊法。作為絕緣膜的形成方法,以使用本發明之絕緣膜的形成方法為佳。 As a method of forming the elongated electrode pattern, a photosensitive paste method can be exemplified. As a method of forming the insulating film, a method of forming the insulating film of the present invention is preferred.
作為感光性隔板糊的塗布方法,能夠舉例棒塗布機、輥塗布機、狹縫式模塗布機、刮刀式塗布機或網版印刷。感光性隔板糊之塗布膜的厚度係可考慮所期望之隔板的高度和因燒結所致的收縮率來決定。為了確保足夠的放電空間來形成亮度,隔板的高度以100μm以上為佳。 As a coating method of the photosensitive spacer paste, a bar coater, a roll coater, a slit die coater, a knife coater, or screen printing can be exemplified. The thickness of the coating film of the photosensitive separator paste can be determined in consideration of the height of the desired separator and the shrinkage rate due to sintering. In order to secure a sufficient discharge space to form brightness, the height of the separator is preferably 100 μm or more.
感光性隔板糊之塗布膜的曝光雖然通常為經由光罩的方法,但是亦無妨以雷射光等直接繪圖。作為曝露裝置,能夠舉例步進(stepper)曝光機或接近式曝光(proximity exposure)機。作為活性光源,能夠舉例近紫外線、紫外線、電子束、X射線或雷射光,但以紫外線為佳。作為紫外線的光源,能夠舉例低壓水銀燈、高壓水銀燈、超高壓水銀燈、鹵素燈或殺菌燈,但以超高壓水銀燈為佳。曝光條件雖隨感光性隔板糊之塗布膜的厚度 而異,但通常使用1~100mW/cm2功率的超高壓水銀燈,進行曝光0.01~30分鐘。又作為顯像的方法,能夠舉例浸漬法、噴霧法或塗刷法。 The exposure of the coating film of the photosensitive separator paste is usually a method of passing through a photomask, but it is also possible to draw directly by laser light or the like. As the exposure device, a stepper exposure machine or a proximity exposure machine can be exemplified. As the active light source, ultraviolet rays, ultraviolet rays, electron beams, X-rays or laser light can be exemplified, but ultraviolet rays are preferred. As the light source of the ultraviolet light, a low pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a halogen lamp or a germicidal lamp can be exemplified, but an ultrahigh pressure mercury lamp is preferred. Although the exposure conditions vary depending on the thickness of the coating film of the photosensitive separator paste, an ultrahigh pressure mercury lamp having a power of 1 to 100 mW/cm 2 is usually used for exposure for 0.01 to 30 minutes. Further, as a method of development, a dipping method, a spraying method, or a painting method can be exemplified.
作為螢光體的形成方法,能夠舉例光微影法、分配(dispenser)法或網版印刷法。螢光體的厚度係以10~30μm為佳,較佳為15~25μm。 As a method of forming the phosphor, a photolithography method, a dispenser method, or a screen printing method can be exemplified. The thickness of the phosphor is preferably 10 to 30 μm, preferably 15 to 25 μm.
以下雖舉出該實施例及比較例來詳細說明本發明,但是本發明之態樣係不受該等限制者。 The present invention will be described in detail below with reference to the examples and comparative examples, but the invention is not limited thereto.
(實施例1) (Example 1)
預先攪拌1質量份的1,1-偶氮雙(環己-1-腈)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊a。 1 part by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, 30 parts by stirring Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 part by mass After the leveling agent is mixed, it is kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste a.
(玻璃粒子A:以組成比為質量百分率,ZnO 35.8質量%、B2O3 37.1質量%、SiO2 12.0質量%、K2O 12.6質量%、Al2O3 1.4質量%、TiO2 0.8質量%、CuO 0.3質量%、平均粒徑D50為2.0μm、最大粒徑Dmax為10.0μm、軟化點為584℃、熱膨脹係數為73.7×10-7/℃) (Glass particle A: mass ratio of composition ratio, ZnO 35.8 mass%, B 2 O 3 37.1 mass%, SiO 2 12.0 mass%, K 2 O 12.6 mass%, Al 2 O 3 1.4 mass%, TiO 2 0.8 mass %, CuO 0.3% by mass, average particle diameter D 50 of 2.0 μm, maximum particle diameter D max of 10.0 μm, softening point of 584 ° C, and thermal expansion coefficient of 73.7×10 -7 /°C)
已形成線寬40μm、膜厚5μm、間距200μm的長條狀電極圖案的玻璃基板(PD200;旭硝子股份有限公司製)上,以狹縫式模塗布機以塗布次數1次塗布絕緣糊a成為固體狀,獲得膜厚105μm的塗布膜a(塗布步驟)。還 有,塗布膜a的膜厚係以最後所獲得之絕緣膜a的凹部(電極非形成部)的膜厚成為30μm,而考慮絕緣糊a的收縮率所決定。 A glass substrate (PD200; manufactured by Asahi Glass Co., Ltd.) having a strip-shaped electrode pattern having a line width of 40 μm, a film thickness of 5 μm, and a pitch of 200 μm was formed, and the insulating paste a was applied as a solid by a slit die coater. In the form of a coating film a having a film thickness of 105 μm (coating step). also In the film thickness of the coating film a, the film thickness of the concave portion (electrode non-formed portion) of the insulating film a finally obtained is 30 μm, and is determined in consideration of the shrinkage ratio of the insulating paste a.
使用IR照射型乾燥機以95℃(T1)加熱塗布膜a,自達到95℃然後經過30分鐘(t1)的時間點開始冷卻,以25℃(T2)冷卻,獲得半硬化膜a1(半硬化步驟)。還有,於T2的冷卻時間為2小時。還有,將特別模型塗布膜a形成於鑽石製之ATR結晶的加熱檯上,以95℃加熱,自達到95℃然後經過30分鐘的時間點開始冷卻,將以25℃冷卻2小時所獲得的模型半硬化膜a1的硬化率決定作為半硬化膜a1的硬化率。 The coating film a was heated at 95 ° C (T 1 ) using an IR irradiation type dryer, cooling was started from 95 ° C and then 30 minutes (t 1 ), and cooled at 25 ° C (T 2 ) to obtain a semi-hardened film a1. (Semi-hardening step). Also, the cooling time at T 2 was 2 hours. Further, the special model coating film a was formed on a heating table made of diamond ATR crystals, heated at 95 ° C, cooled from 95 ° C and then 30 minutes, and cooled at 25 ° C for 2 hours. The hardening rate of the model semi-hardened film a1 is determined as the hardening rate of the semi-hardened film a1.
將半硬化膜a1以380℃加熱10分鐘,熱分解、除去半硬化膜a1中的有機成分。其後,以600℃進一步加熱10分鐘,燒結玻璃粒子等而獲得絕緣膜a1(燒結步驟)。 The semi-hardened film a1 was heated at 380 ° C for 10 minutes to thermally decompose and remove the organic component in the semi-hardened film a1. Thereafter, the film was further heated at 600 ° C for 10 minutes to sinter glass particles or the like to obtain an insulating film a1 (sintering step).
(實施例2) (Example 2)
除了t1為60分鐘以外進行與實施例1相同之操作,經過半硬化膜a2而獲得絕緣膜a2。還有,決定半硬化膜a2之硬化率時,和t1為60分鐘一起亦將模型塗布膜a2的加熱時間變更為60分鐘。亦即,於鑽石製之ATR結晶的加熱檯上形成特別模型塗布膜a,以95℃加熱,自達到95℃然後經過60分鐘之時間點開始冷卻,將以25℃冷卻2小時所獲得之模型半硬化膜a2的硬化率決定作為半硬化膜a2的硬化率。針對以下的實施例3~27及比較例1~5,亦相同地當變更半硬化步驟之加熱條件之T1或t1時,模型塗布膜 的加熱條件亦配合該變更而進行變更。 The same operation as in Example 1 was carried out except that t 1 was 60 minutes, and the insulating film a2 was obtained through the semi-hardened film a2. Further, when determining the rate of hardening of the semi-cured film a2, and t 1 of the model with the coating film will also a2 heating time was changed to 60 minutes 60 minutes. That is, a special model coating film a is formed on a heating table made of diamond ATR crystals, heated at 95 ° C, cooled from 95 ° C and then 60 minutes, and cooled at 25 ° C for 2 hours. The hardening rate of the semi-hardened film a2 determines the hardening rate of the semi-hardened film a2. In the following Examples 3 to 27 and Comparative Examples 1 to 5, similarly, when T 1 or t 1 of the heating conditions of the semi-hardening step was changed, the heating conditions of the mold coating film were also changed in accordance with the change.
(實施例3) (Example 3)
預先攪拌1.2質量份的1,1-偶氮雙(環己-1-腈)、12質量份的二-三羥甲基丙烷四丙烯酸酯、2質量份的乙基纖維素、28質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊b。 1.2 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 12 parts by mass of di-trimethylolpropane tetraacrylate, 2 parts by mass of ethylcellulose, and 28 parts by mass were stirred in advance. Terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersing agent, and 0.1 parts by mass of a uniform coating After the agent, the mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste b.
除了使用絕緣糊b、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜b。 The same operation as in Example 1 was carried out except that the insulating paste b and t 1 were used for 60 minutes to obtain an insulating film b.
(實施例4) (Example 4)
預先攪拌0.4質量份的1,1-偶氮雙(環己-1-腈)、3.9質量份的二新戊四醇五丙烯酸酯、6.6質量份的二新戊四醇六丙烯酸酯、2質量份的乙基纖維素、28質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊c。 0.4 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 3.9 parts by mass of dipentaerythritol pentaacrylate, 6.6 parts by mass of dipentaerythritol hexaacrylate, and 2 masses were previously stirred. Ethylcellulose, 28 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 mass After dispersing agent and 0.1 part by mass of the leveling agent, the mixture was kneaded by a roll mill, filtered, and defoamed under reduced pressure to obtain an insulating paste c.
除了使用絕緣糊c、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜c。 The same operation as in Example 1 was carried out except that the insulating paste c and t 1 were used for 60 minutes to obtain an insulating film c.
(實施例5) (Example 5)
預先攪拌1質量份的1,1-偶氮雙(環己-1-腈)、10質量份的二乙二醇二甲基丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2 質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊d。 1 part by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of diethylene glycol dimethacrylate, 2 parts by mass of ethyl cellulose, and 30 parts by mass of hydrazine were previously stirred. Sterol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 After the mass part of the dispersant and 0.1 part by mass of the leveling agent, the mixture was kneaded in a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste d.
除了使用絕緣糊d以外進行與實施例1相同的操作,獲得絕緣膜d。 The same operation as in Example 1 was carried out except that the insulating paste d was used, and an insulating film d was obtained.
(實施例6) (Example 6)
預先攪拌1質量份的2,2-偶氮雙異丁腈、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的乙酸正丁酯、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊e。 1 part by mass of 2,2-azobisisobutyronitrile, 10 parts by mass of trimethylolpropane propylene oxide modified triacrylate, 2 parts by mass of ethyl cellulose, and 30 parts by mass of acetic acid are stirred in advance Butyl ester, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersant, and 0.1 part by mass of a leveling agent Thereafter, the mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste e.
除了使用絕緣糊e之塗布膜、分別變更T1為75℃、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜e。 The insulating film e was obtained by the same operation as in Example 1 except that the coating film of the insulating paste e was used, and T 1 was changed to 75 ° C and t 1 was changed to 60 minutes.
(實施例7) (Example 7)
預先攪拌1質量份的2,2-偶氮雙(N-丁基-2-甲基丙醯胺)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊f。 1 part by mass of 2,2-azobis(N-butyl-2-methylpropionamide), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, and 2 parts by mass of a mixture Ethylcellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass After dispersing agent and 0.1 part by mass of the leveling agent, the mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste f.
除了使用絕緣糊f、分別變更T1為120℃、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜f。 The insulating film f was obtained by the same operation as in Example 1 except that the insulating paste f was used, and T 1 was changed to 120 ° C and t 1 was changed to 60 minutes.
(實施例8) (Example 8)
預先攪拌1質量份的2,2-偶氮雙[2-(2-咪唑啉-2-基)丙烷]二氯化氫、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊g。由於2,2-偶氮雙[2-(2-咪唑啉-2-基)丙烷]二氯化氫係T10低,雖然認為稍有糊增黏的趨勢,但是仍在實用上無問題的範圍。 1 part by mass of 2,2-azobis[2-(2-imidazolin-2-yl)propane]hydrogen dichloride, 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 Parts by mass of ethyl cellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 After the mass part of the dispersant and 0.1 part by mass of the leveling agent, the mixture was kneaded in a roll mill, filtered, and defoamed under reduced pressure to obtain an insulating paste g. Since 2,2-azobis[2-(2-imidazolin-2-yl)propane]hydrogen chloride T 10 is low, although it tends to be slightly viscous, it is still practically problem-free.
除了使用絕緣糊g、分別變更T1為54℃、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜g。 The insulating film g was obtained by the same operation as in Example 1 except that the insulating paste g was used and the T 1 was changed to 54 ° C and the t 1 was changed to 60 minutes.
(實施例9) (Example 9)
預先攪拌1質量份的二-三級丁基過氧化物、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊h。 1 part by mass of di-tertiary butyl peroxide, 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, and 30 parts by mass of terpineol 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersing agent, and 0.1 part by mass of a leveling agent, The mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste h.
除了使用絕緣糊h、分別變更T1為135℃、t1為60分鐘以外進行與實施例1相同的操作,作為絕緣膜h。 The same operation as in Example 1 was carried out, except that the insulating paste h was used, and T 1 was changed to 135 ° C and t 1 was 60 minutes, respectively, as the insulating film h.
(實施例10) (Embodiment 10)
預先攪拌0.7質量份的1,1-偶氮雙(環己-1-腈)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻 璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊i。 0.7 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, 30 parts by stirring Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass After the glass particles A and 0.2 parts by mass of the dispersant and 0.1 parts by mass of the leveling agent, they were kneaded by a roll mill, filtered, and defoamed under reduced pressure to obtain an insulating paste i.
除了使用絕緣糊i、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜i。 The same operation as in Example 1 was carried out except that the insulating paste i and t 1 were used for 60 minutes to obtain an insulating film i.
(實施例11) (Example 11)
預先攪拌1.2質量份的1,1-偶氮雙(環己-1-腈)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊j。 1.2 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, 30 parts by stirring Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 part by mass After the leveling agent is mixed, it is kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste j.
除了使用絕緣糊j、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜j。 The same operation as in Example 1 was carried out except that the insulating paste j and t 1 were used for 60 minutes, and an insulating film j was obtained.
(實施例12) (Embodiment 12)
預先攪拌0.1質量份的1,1-偶氮雙(環己-1-腈)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊k。 0.1 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, 30 parts by stirring Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 part by mass After the leveling agent is mixed, it is kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste k.
除了使用絕緣糊k、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜k。 The same operation as in Example 1 was carried out except that the insulating paste k and t 1 were used for 60 minutes to obtain an insulating film k.
(實施例13) (Example 13)
預先攪拌1.5質量份的1,1-偶氮雙(環己-1-腈)、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊1。 1.5 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, and 30 parts by stirring Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 part by mass After the leveling agent was mixed, it was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste 1.
除了使用絕緣糊1、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜1。由於1,1-偶氮雙(環己-1-腈)的添加量多,雖然認為在半硬化膜的階段稍有析出的趨勢,但是仍在實用上無問題的範圍。 The insulating film 1 was obtained by the same operation as in Example 1 except that the insulating paste 1 and t 1 were used for 60 minutes. Since the addition amount of 1,1-azobis(cyclohexan-1-carbonitrile) is large, it is considered that there is a tendency to precipitate slightly at the stage of the semi-cured film, but it is still in a practically problem-free range.
(實施例14) (Example 14)
預先攪拌0.8質量份的1,1-偶氮雙(環己-1-腈)、7.9質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊m。 0.8 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 7.9 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 parts by mass of ethyl cellulose, and 30 parts by stirring. Parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 part by mass After the leveling agent is mixed, it is kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste m.
除了使用絕緣糊m、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜m。 The same operation as in Example 1 was carried out except that the insulating paste m and t 1 were used for 60 minutes to obtain an insulating film m.
(實施例15) (Example 15)
預先攪拌1.1質量份的1,1-偶氮雙(環己-1-腈)、10.8質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量 份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊n。 Pre-stirring 1.1 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 10.8 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, 2 mass Ethylcellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 mass After dispersing agent and 0.1 part by mass of the leveling agent, the mixture was kneaded in a roll mill, filtered, and defoamed under reduced pressure to obtain an insulating paste n.
除了使用絕緣糊n、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜n。 The same operation as in Example 1 was carried out except that the insulating paste n and t 1 were used for 60 minutes to obtain an insulating film n.
(實施例16) (Embodiment 16)
預先攪拌0.8質量份的1,1-偶氮雙(環己-1-腈)、3.9質量份的環氧改質丙三醇環氧丙烷三丙烯酸酯(EO 9mol)、3.9質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2.2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊o。 0.8 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 3.9 parts by mass of epoxy-modified glycerin propylene oxide triacrylate (EO 9 mol), and 3.9 parts by mass of trishydroxyl were previously stirred. Methylpropane propylene oxide modified triacrylate, 2.2 parts by mass of ethyl cellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of phthalic acid Isodecyl ester, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersant, and 0.1 part by mass of a leveling agent were kneaded by a roll mill, followed by filtration and defoaming under reduced pressure to obtain an insulating paste o.
除了使用絕緣糊o、t1為60分鐘以外進行與實施例1相同的操作,作為絕緣膜o。 The same operation as in Example 1 was carried out, except that the insulating paste o and t 1 were used for 60 minutes, as the insulating film o.
(實施例17) (Example 17)
預先攪拌1.3質量份的1,1-偶氮雙(環己-1-腈)、18.3質量份的二新戊四醇六丙烯酸酯、1質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、0.5質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊p。 1.3 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 18.3 parts by mass of dipentaerythritol hexaacrylate, 1 part by mass of ethyl cellulose, and 30 parts by mass of a product are stirred in advance. Alcohol, 6 parts by mass of butyl carbitol acetate, 0.5 parts by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersing agent, and 0.1 part by mass of a leveling agent The mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste p.
除了使用絕緣糊p、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜p。雖然絕緣膜中局部稍微產生薄膜浮起,但是仍在實用上無問題的範圍。 The same operation as in Example 1 was carried out except that the insulating paste p and t 1 were used for 60 minutes to obtain an insulating film p. Although a slight floating of the film is locally generated in the insulating film, it is still in a practically problem-free range.
(實施例18) (Embodiment 18)
預先攪拌1質量份的1,1-偶氮雙(環己-1-腈)、13.9質量份的三羥甲基丙烷環氧丙烷改質三烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊q。 1 part by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 13.9 parts by mass of trimethylolpropane propylene oxide modified trienoate, 2 parts by mass of ethyl cellulose, and 2 parts by mass of ethyl cellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 mass After the portion of the leveling agent was mixed, it was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste q.
除了使用絕緣糊q、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜q。 The same operation as in Example 1 was carried out except that the insulating paste q and t 1 were used for 60 minutes to obtain an insulating film q.
(實施例19) (Embodiment 19)
預先攪拌0.58質量份的1,1-偶氮雙(環己-1-腈)、5.8質量份的三羥甲基丙烷環氧丙烷改質三烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊r。 0.58 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 5.8 parts by mass of trimethylolpropane propylene oxide modified trienoate, and 2 parts by mass of ethyl cellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of dispersant, and 0.1 mass After the portion of the leveling agent was mixed, it was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste r.
除了使用絕緣糊r、t1為60分鐘以外進行與實施例1相同的操作,作為絕緣膜r。 The same operation as in Example 1 was carried out, except that the insulating paste r and t 1 were used for 60 minutes, as the insulating film r.
(實施例20) (Embodiment 20)
預先攪拌0.17質量份的1,1-偶氮雙(環己-1-腈)、17.3質量份的三羥甲基丙烷環氧丙烷改質三烯酸酯、2質量份 的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊s。 0.17 parts by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 17.3 parts by mass of trimethylolpropane propylene oxide modified trienoate, and 2 parts by mass were stirred in advance. Ethylcellulose, 30 parts by mass of terpineol, 6 parts by mass of butyl carbitol acetate, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass After dispersing agent and 0.1 part by mass of the leveling agent, the mixture was kneaded by a roll mill and then subjected to filtration and defoaming under reduced pressure to obtain an insulating paste s.
除了使用絕緣糊s、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜s。雖然絕緣膜中局部稍微產生薄膜浮起,但是仍在實用尚無問題的範圍。 The same operation as in Example 1 was carried out except that the insulating paste s and t 1 were used for 60 minutes, and an insulating film s was obtained. Although a slight floating of the film is locally generated in the insulating film, it is still practically problem-free.
(實施例21) (Example 21)
除了分別變更T1為88.5℃、t1為120分鐘以外進行與實施例1相同的操作,獲得絕緣膜a3。 The same operation as in Example 1 was carried out except that T 1 was changed to 88.5 ° C and t 1 was 120 minutes, respectively, to obtain an insulating film a3.
(實施例22) (Example 22)
除了分別變更T1為98℃、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜a4。 The same operation as in Example 1 was carried out except that T 1 was changed to 98 ° C and t 1 was 60 minutes, respectively, to obtain an insulating film a4.
(實施例23) (Example 23)
除了分別變更T1為118℃、t1為5分鐘以外進行與實施例1相同的操作,獲得絕緣膜a5。 The same operation as in Example 1 was carried out except that T 1 was changed to 118 ° C and t 1 was changed to 5 minutes, respectively, to obtain an insulating film a5.
(實施例24) (Example 24)
除了t1為240分鐘以外進行與實施例1相同的操作,獲得絕緣膜a6。 The same operation as in Example 1 was carried out except that t 1 was 240 minutes, and an insulating film a6 was obtained.
(實施例25) (Embodiment 25)
除了t1為145分鐘以外進行與實施例1相同的操作,獲得絕緣膜a7。 The same operation as in Example 1 was carried out except that t 1 was 145 minutes, and an insulating film a7 was obtained.
(實施例26) (Example 26)
除了分別變更T1為78℃、t1為750分鐘以外進行與實 施例1相同的操作,獲得絕緣膜a8。 The same operation as in Example 1 was carried out except that T 1 was changed to 78 ° C and t 1 was changed to 750 minutes, respectively, to obtain an insulating film a8.
(實施例27) (Example 27)
除了分別變更T1為123℃、t1為4分鐘以外進行與實施例1相同的操作,獲得絕緣膜a9。 The same operation as in Example 1 was carried out except that T 1 was changed to 123 ° C and t 1 was changed to 4 minutes, respectively, to obtain an insulating film a9.
(比較例1) (Comparative Example 1)
預先攪拌1質量份的1,1-偶氮雙(環己-1-腈)、2質量份的乙基纖維素、40質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊v。 1 part by mass of 1,1-azobis(cyclohexan-1-carbonitrile), 2 parts by mass of ethyl cellulose, 40 parts by mass of terpineol, and 6 parts by mass of butyl carbitol acetic acid were stirred in advance. An ester, 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersant, and 0.1 part by mass of a leveling agent, and then kneaded by a roll mill, followed by filtration and under reduced pressure. Defoaming, obtaining an insulating paste v.
除了使用絕緣糊v、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜v。 The same operation as in Example 1 was carried out except that the insulating paste v and t 1 were used for 60 minutes to obtain an insulating film v.
(比較例2) (Comparative Example 2)
預先攪拌10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、2質量份的乙基纖維素、30質量份的萜品醇、6質量份的丁基卡必醇乙酸酯、1質量份的鄰苯二甲酸異癸酯、50質量份的玻璃粒子A、0.2質量份的分散劑及0.1質量份的勻塗劑後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得絕緣糊w。 10 parts by mass of trimethylolpropane propylene oxide modified triacrylate, 2 parts by mass of ethyl cellulose, 30 parts by mass of terpineol, and 6 parts by mass of butyl carbitol acetate are stirred in advance. 1 part by mass of isodecyl phthalate, 50 parts by mass of glass particles A, 0.2 parts by mass of a dispersing agent, and 0.1 part by mass of a leveling agent, and then kneaded by a roll mill and then filtered and decompressed under reduced pressure. Bubble, get insulation paste w.
除了使用絕緣糊w、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜w。 The same operation as in Example 1 was carried out except that the insulating paste w and t 1 were used for 60 minutes, and an insulating film w was obtained.
(比較例3) (Comparative Example 3)
除了不進行半硬化步驟以外進行與實施例1相同的操作,獲得絕緣膜a11。 The same operation as in Example 1 was carried out except that the semi-hardening step was not performed, and the insulating film a11 was obtained.
(比較例4) (Comparative Example 4)
除了變更t1為5分鐘以外進行與實施例1相同的操作,獲得絕緣膜a10。 The same operation as in Example 1 was carried out except that the change t 1 was 5 minutes, and the insulating film a10 was obtained.
(比較例5) (Comparative Example 5)
除了分別變更T1為123℃、t1為60分鐘以外進行與實施例1相同的操作,獲得絕緣膜a12。 The same operation as in Example 1 was carried out except that T 1 was changed to 123 ° C and t 1 was 60 minutes, respectively, to obtain an insulating film a12.
表1彙總顯示實施例1~28及比較例1~5的熱硬化性成分、熱聚合起始劑及關於半硬化步驟的參數、及絕緣膜的評估結果。 Table 1 summarizes the results of evaluation of the thermosetting component, the thermal polymerization initiator, the parameters for the semi-curing step, and the insulating film of Examples 1 to 28 and Comparative Examples 1 to 5.
還有,實施例1~27及比較例1~5所獲得之絕緣膜的平滑性係以A~E的5階段來評估。作為A~E的評估基準,係以0μm以上小於0.5μm為A、0.5μm以上小於1μm為B、1μm以上小於2μm為C、2μm以上小於3μm為D、3μm以上為E,以E為不佳。 Further, the smoothness of the insulating films obtained in Examples 1 to 27 and Comparative Examples 1 to 5 was evaluated in five stages of A to E. The evaluation criteria of A to E are 0 μm or more and less than 0.5 μm, A, 0.5 μm or more and less than 1 μm, B, 1 μm or more and less than 2 μm, C, 2 μm or more and less than 3 μm, D, and 3 μm or more, and E is not preferable. .
又,絕緣膜的缺點係針對龜裂及氣泡分別以A~E的5階段來評估。作為對於龜裂之A~E的評估基準,係以龜裂0個為A、龜裂1個為B、龜裂2~3個為C、龜裂3個以上小於5個為D、龜裂5個以上為E,而以E為不佳。作為對於氣泡之A~E的評估基準,以氣泡0個為A(非常良好)、氣泡1~3個為B、氣泡3~5個為C、氣泡5~小於10個為D、氣泡10個以上為E,以E為不佳。 Further, the disadvantage of the insulating film is evaluated in five stages of A to E for cracks and bubbles. As a criterion for the evaluation of the cracks A to E, the cracks are 0 for A, the cracks are 1 for B, the cracks are 2 to 3 for C, and the cracks are 3 or more and less than 5 for D. Five or more are E, and E is not good. As a criterion for evaluating the bubbles A to E, 0 bubbles are A (very good), 1 to 3 bubbles are B, 3 to 5 bubbles are C, bubbles 5 to less than 10 are D, and bubbles are 10 The above is E, and E is not good.
(感光性導電糊之調製) (modulation of photosensitive conductive paste)
預先攪拌10質量份的丙烯酸樹脂A(甲基丙烯酸/甲基丙烯酸甲酯共聚物;酸價為120;分子量為1萬)、5質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、1質量份的2-甲基-(4-甲基苯硫基)-2-啉丙酮、1質量份的2,4-二乙基噻吨酮、0.1質量份的二丁基羥基甲苯、15質量份的酯醇(Texanol)、65質量份的銀粒子(粒徑為2μm)、3質量份的玻璃粒子B、0.2質量份的分散劑(SOLSPERSE 20000;日本Lubrizol股份有限公司製)及0.1質量份的勻塗劑(L1980;楠本化成股份有限公司製)後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得感光性導電糊。 10 parts by mass of acrylic resin A (methacrylic acid/methyl methacrylate copolymer; acid value of 120; molecular weight of 10,000) and 5 parts by mass of trimethylolpropane propylene oxide modified triacrylate were previously stirred. 1 part by mass of 2-methyl-(4-methylphenylthio)-2- Olinone acetone, 1 part by mass of 2,4-diethylthioxanthone, 0.1 part by mass of dibutylhydroxytoluene, 15 parts by mass of ester alcohol (Texanol), 65 parts by mass of silver particles (particle diameter of 2 μm) 3 parts by mass of glass particles B, 0.2 parts by mass of a dispersant (SOLSPERSE 20000; manufactured by Lubrizol Co., Ltd., Japan), and 0.1 parts by mass of a leveling agent (L1980; manufactured by Nanben Chemical Co., Ltd.), followed by a roll mill After kneading, filtration and defoaming under reduced pressure were carried out to obtain a photosensitive conductive paste.
(玻璃粒子B:以組成比為質量百分率,Bi2O3 73.0質量%、ZnO 15.0質量%、B2O3 8.0質量%、BaO 2.0質量%、SiO2 1.5質量%、Al2O3 0.5質量%、平均粒徑D50為2.0μm、最大粒徑Dmax為10.0μm) (Glass particle B: mass ratio of composition ratio, Bi 2 O 3 73.0% by mass, ZnO 15.0% by mass, B 2 O 3 8.0% by mass, BaO 2.0% by mass, SiO 2 1.5% by mass, Al 2 O 3 0.5 mass %, average particle diameter D 50 is 2.0 μm, and maximum particle diameter D max is 10.0 μm)
(感光性玻璃糊的調製) (modulation of photosensitive glass paste)
預先攪拌32質量份的玻璃粉末C、8質量份的玻璃粉末D、18質量份的丙烯酸樹脂B(將20質量份的甲基丙烯酸縮水甘油酯(GMA)加成聚合於苯乙烯/甲基丙烯酸甲酯/甲基丙烯酸的共聚物(共聚合比例:30質量份/30質量份/40質量份)者)作為感光性有機成分、12質量份的聚丙二醇二甲基丙烯酸酯、4質量份的2-芐基-2-二甲胺基-1-(4-啉苯基)-1-丁酮、25質量份的γ-丁內酯、1質量份的1,2,3-苯幷三唑及0.1質量份的氫醌單甲基醚後,以輥磨基混練然後進行過濾及減壓下的消泡,獲得感光性玻 璃糊。 32 parts by mass of the glass powder C, 8 parts by mass of the glass powder D, and 18 parts by mass of the acrylic resin B (addition of 20 parts by mass of glycidyl methacrylate (GMA) to styrene/methacrylic acid) a copolymer of methyl ester/methacrylic acid (copolymerization ratio: 30 parts by mass / 30 parts by mass / 40 parts by mass) as a photosensitive organic component, 12 parts by mass of polypropylene glycol dimethacrylate, and 4 parts by mass 2-benzyl-2-dimethylamino-1-(4- Phenylphenyl)-1-butanone, 25 parts by mass of γ-butyrolactone, 1 part by mass of 1,2,3-benzotriazole and 0.1 part by mass of hydroquinone monomethyl ether, followed by roll milling The base was kneaded and then subjected to filtration and defoaming under reduced pressure to obtain a photosensitive glass paste.
(玻璃粉末C:氧化鋰7質量%、氧化矽22質量%、氧化硼33質量%、氧化鋅3質量%、氧化鋁19質量%、氧化鎂6質量%、氧化鋇5質量%、氧化鈣5質量%、平均粒徑D50為2.0μm、最大粒徑Dmax為10.0μm) (Glass powder C: 7 mass% of lithium oxide, 22 mass% of cerium oxide, 33 mass% of boron oxide, 3% by mass of zinc oxide, 19 mass% of alumina, 6% by mass of magnesia, 5 mass% of cerium oxide, and calcium oxide 5 Mass %, average particle diameter D 50 is 2.0 μm, and maximum particle diameter D max is 10.0 μm)
(玻璃粉末D:氧化鈉/1質量%、氧化矽/40質量%、氧化硼/10質量%、氧化鋁/33質量%、氧化鋅/4質量%、氧化鈣/9質量%、氧化鈦/3質量%、平均粒徑D50為2.0μm、最大粒徑Dmax為10.0μm) (Glass powder D: sodium oxide/1% by mass, cerium oxide/40% by mass, boron oxide/10% by mass, alumina/33% by mass, zinc oxide/4% by mass, calcium oxide/9% by mass, titanium oxide/ 3 mass%, an average particle diameter D 50 of 2.0 μm, and a maximum particle diameter D max of 10.0 μm)
(螢光體糊之調製) (modulation of phosphor paste)
預先攪拌螢光體粉末(藍色螢光體粉末:BaMgAl10O17:Eu、紅色螢光體粉末:(Y,Gd)BO3:Eu、綠色螢光體粉末:Zn2SiO4:Mn)、乙基纖維素樹脂、萜品醇及芐醇後,以輥磨機混練然後進行過濾及減壓下的消泡,獲得螢光體糊。 The phosphor powder is stirred in advance (blue phosphor powder: BaMgAl 10 O 17 :Eu, red phosphor powder: (Y, Gd) BO 3 : Eu, green phosphor powder: Zn 2 SiO 4 : Mn) After the ethyl cellulose resin, terpineol, and benzyl alcohol, the mixture was kneaded in a roll mill, filtered, and defoamed under reduced pressure to obtain a phosphor paste.
(實施例28) (Embodiment 28)
在玻璃基板(PD200;旭硝子股份有限公司製)上,印刷上述的感光性電極糊而形成塗布膜,以120℃進行乾燥10分鐘。經由遮光罩曝光所獲得的塗布膜,以0.5%碳酸鈉水溶液進行顯像,再者於大氣下、以600℃進行燒結,形成厚度5μm、線寬40μm、間距200μm之長條狀的位址電極圖案。 The above-mentioned photosensitive electrode paste was printed on a glass substrate (PD200; manufactured by Asahi Glass Co., Ltd.) to form a coating film, and dried at 120 ° C for 10 minutes. The coating film obtained by exposure through a hood was developed with a 0.5% sodium carbonate aqueous solution, and further sintered at 600 ° C under the atmosphere to form a strip-shaped address electrode having a thickness of 5 μm, a line width of 40 μm, and a pitch of 200 μm. pattern.
在已形成位址電極圖案的基板上,進行與實施例1相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.3μm。 On the substrate on which the address electrode pattern was formed, the same operation as in Example 1 was carried out to form an insulating film. The formed insulating film did not generate bubbles or cracks, and the value of H1-H2 was 0.3 μm.
在所獲得的絕緣膜上,印刷上述的感光性玻璃糊而形成塗布膜。經由遮光罩曝光所獲得的塗布膜,以0.5%碳酸鈉水溶液進行顯像,再者於大氣下、以600℃進行燒結,形成包含厚度120μm、底部寬30μm、間距200μm之主隔板;及厚度120μm、底部寬30μm、間距600μm的輔助隔板的格子狀隔板。對於所形成之絕緣膜及格子狀的隔板,均未觀察到任何龜裂或崩塌等之缺點。 The photosensitive glass paste described above was printed on the obtained insulating film to form a coating film. The coating film obtained by exposure through a hood was developed with a 0.5% sodium carbonate aqueous solution, and further sintered at 600 ° C under the atmosphere to form a main separator including a thickness of 120 μm, a bottom width of 30 μm, and a pitch of 200 μm; A lattice-shaped separator of an auxiliary separator of 120 μm, a bottom width of 30 μm, and a pitch of 600 μm. No defects such as cracks or collapses were observed in the formed insulating film and the lattice-shaped separator.
藉由噴灑法將上述的螢光體糊塗布於主隔板間,以450℃進行燒結,形成厚度15μm的螢光體層,而完成背面板。 The above-mentioned phosphor paste was applied between the main separators by a spraying method, and sintered at 450 ° C to form a phosphor layer having a thickness of 15 μm to complete the back sheet.
(比較例6) (Comparative Example 6)
進行與實施例28相同的操作,於玻璃基板上形成位址電極圖案。在已形成位址電極圖案的基板上,進行與實施例8相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.1μm。 The same operation as in Example 28 was carried out to form an address electrode pattern on a glass substrate. On the substrate on which the address electrode pattern was formed, the same operation as in Example 8 was carried out to form an insulating film. The insulating film formed did not generate bubbles or cracks, and the value of H1-H2 was 0.1 μm.
進一步進行與實施例28相同的操作,於所獲得的絕緣膜上,形成格子狀的隔板及螢光體層,完成電漿顯示器用背面板。 Further, in the same manner as in Example 28, a lattice-shaped separator and a phosphor layer were formed on the obtained insulating film to complete a back sheet for a plasma display.
因對於所形成之絕緣膜的H1-H2之值小於0.2μm,所形成之隔板的主隔板一部分崩塌,螢光體層滲出。 Since the value of H1-H2 for the formed insulating film is less than 0.2 μm, a part of the main separator of the formed separator collapses and the phosphor layer oozes out.
(比較例7) (Comparative Example 7)
進行與實施例28相同的操作,於玻璃基板上形成位址電極圖案。在已形成位址電極圖案的基板上,進行與實施例9相同的操作,形成絕緣膜。所形成之絕緣膜未產 生氣泡或龜裂等,H1-H2之值為1.2μm。 The same operation as in Example 28 was carried out to form an address electrode pattern on a glass substrate. On the substrate on which the address electrode pattern was formed, the same operation as in Example 9 was carried out to form an insulating film. The formed insulating film is not produced Bubbles or cracks, etc., the value of H1-H2 is 1.2 μm.
進一步進行與實施例28相同的操作,於所獲得的絕緣膜上,形成格子狀的隔板及螢光體層,完成電漿顯示器用背面板。 Further, in the same manner as in Example 28, a lattice-shaped separator and a phosphor layer were formed on the obtained insulating film to complete a back sheet for a plasma display.
因對於所形成之絕緣膜的H1-H2之值大於1.0μm,燒結隔板後,絕緣膜產生龜裂。 Since the value of H1-H2 for the formed insulating film is more than 1.0 μm, the insulating film is cracked after the separator is sintered.
(感光性黑色電極糊之調製) (modulation of photosensitive black electrode paste)
預先攪拌15質量份的丙烯酸樹脂A、10質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、1質量份的2-甲基-(4-甲基苯硫基)-2-啉丙酮、1質量份的2,4-二乙基噻吨酮、0.1質量份的二丁基羥基甲苯、30質量份的酯醇、15質量份的氧化鈷(粒徑400nm)、30質量份的玻璃粒子B、0.2質量份的分散劑(SOLSPERSE 20000)及0.1質量份的勻塗劑(L1980)後,以輥磨機混練然候進行過濾及減壓下的消泡,獲得感光性黑色電極糊。 15 parts by mass of acrylic resin A, 10 parts by mass of trimethylolpropane propylene oxide modified triacrylate, and 1 part by mass of 2-methyl-(4-methylphenylthio)-2- Olinone acetone, 1 part by mass of 2,4-diethylthioxanthone, 0.1 part by mass of dibutylhydroxytoluene, 30 parts by mass of ester alcohol, 15 parts by mass of cobalt oxide (particle diameter: 400 nm), 30 parts by mass After the glass particles B, 0.2 parts by mass of a dispersant (SOLSPERSE 20000), and 0.1 parts by mass of a leveling agent (L1980), the mixture was filtered by a roll mill and defoamed under reduced pressure to obtain a photosensitive black electrode. paste.
(感光性白色導電糊之調製) (modulation of photosensitive white conductive paste)
預先攪拌10質量份的丙烯酸樹脂A、5質量份的三羥甲基丙烷環氧丙烷改質三丙烯酸酯、1質量份的2-甲基-(4-甲基苯硫基)-2-啉丙酮、1質量份的2,4-二乙基噻吨酮、0.1質量份的二丁基羥基甲苯、15質量份的萜品醇、65質量份的銀粒子(粒徑2μm)、3質量份的玻璃粒子B、0.2質量份的分散劑(SOLSPERSE 20000)及0.1質量份的勻塗劑(L1980)後,以輥磨機混練然候進行過濾及減壓下的消泡,獲得感光性白色導電糊。 10 parts by mass of acrylic resin A, 5 parts by mass of trimethylolpropane propylene oxide-modified triacrylate, and 1 part by mass of 2-methyl-(4-methylphenylthio)-2- Olinone acetone, 1 part by mass of 2,4-diethylthioxanthone, 0.1 part by mass of dibutylhydroxytoluene, 15 parts by mass of terpineol, 65 parts by mass of silver particles (particle size 2 μm), 3 mass Parts of the glass particles B, 0.2 parts by mass of a dispersant (SOLSPERSE 20000) and 0.1 parts by mass of a leveling agent (L1980), and then subjected to filtration by a roll mill and defoaming under reduced pressure to obtain a photosensitive white color. Conductive paste.
(實施例29) (Example 29)
在玻璃基板(PD200;旭硝子股份有限公司製)上,以500Å厚度濺鍍ITO,藉由光蝕刻法形成厚度500Å的透明電極。在已形成透明電極的玻璃基板上,藉由網版印刷法印刷上述的感光性黑色電極糊而形成塗布膜,以120℃進行乾燥10分鐘。再者,藉由網版印刷法印刷上述的感光性白色電極糊而形成雙層的塗布膜,以120℃乾燥10分鐘。經由光遮罩曝光所獲得之雙層的塗布膜,以0.5%碳酸鈉水溶液顯像,再於大氣下、以600℃進行燒結,形成厚度5μm、線寬40μm、間距200μm的長條狀的匯流排電極圖案。 On a glass substrate (PD200; manufactured by Asahi Glass Co., Ltd.), ITO was sputtered at a thickness of 500 Å, and a transparent electrode having a thickness of 500 Å was formed by photolithography. On the glass substrate on which the transparent electrode was formed, the above-mentioned photosensitive black electrode paste was printed by a screen printing method to form a coating film, and dried at 120 ° C for 10 minutes. Further, the above-mentioned photosensitive white electrode paste was printed by a screen printing method to form a two-layer coating film, which was dried at 120 ° C for 10 minutes. The two-layer coating film obtained by exposure through a light mask was developed with a 0.5% sodium carbonate aqueous solution, and then sintered at 600 ° C under the atmosphere to form a long-shaped confluence having a thickness of 5 μm, a line width of 40 μm, and a pitch of 200 μm. Row electrode pattern.
在已形成匯流排電極圖案的基板上,進行與實施例1相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.3μm。最後蒸鍍MgO而形成保護膜,完成前面板。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 1 was carried out to form an insulating film. The formed insulating film did not generate bubbles or cracks, and the value of H1-H2 was 0.3 μm. Finally, MgO is evaporated to form a protective film, and the front panel is completed.
使用玻璃料密封劑(glass frit sealing agent)以490℃將所獲得之前面板、實施例28所獲得的背面板密封後,加熱至410℃並同時進行5小時真空抽氣。由於形成於前面板的絕緣膜的H1-H2之值位於較佳範圍,真空度到達5.0×10-5Pa的時間為250分鐘。若真空度到達5.0×10-5Pa的時間為300分鐘以下,則判斷為製造程序的便利性上係無特別之問題。 The obtained front panel and the back panel obtained in Example 28 were sealed at 490 ° C using a glass frit sealing agent, and then heated to 410 ° C while vacuum evacuation was performed for 5 hours. Since the value of H1-H2 of the insulating film formed on the front panel is in a preferable range, the time when the degree of vacuum reaches 5.0 × 10 -5 Pa is 250 minutes. When the time when the degree of vacuum reaches 5.0 × 10 -5 Pa is 300 minutes or less, it is judged that there is no particular problem in the convenience of the manufacturing procedure.
將Xe-Ne混合氣體密封於放電空間內,裝置驅動電路,進行老化,完成電漿顯示器面板。所獲得之電漿顯示器穩定地進行誘發放電,而且亦無干擾的發生而為良好者。 The Xe-Ne mixed gas is sealed in the discharge space, and the device drives the circuit to perform aging to complete the plasma display panel. The obtained plasma display stably performs evoked discharge, and it is also good without interference.
(實施例30) (Embodiment 30)
在已形成匯流排電極圖案的基板上,進行與實施例2相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.2μm。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 2 was carried out to form an insulating film. The insulating film formed did not generate bubbles or cracks, and the value of H1-H2 was 0.2 μm.
使用所獲得的前面板及實施例28所獲得的背面板,進行與實施例29相同的操作,完成電漿顯示器面板。 Using the obtained front panel and the back panel obtained in Example 28, the same operation as in Example 29 was carried out to complete the plasma display panel.
真空度到達5.0×10-5Pa的時間為290分鐘而無問題。所獲得的電漿顯示器係穩定地進行誘發放電且無干擾之發生而為良好者。 The time when the degree of vacuum reached 5.0 × 10 -5 Pa was 290 minutes without problems. The obtained plasma display is excellent in that the induced discharge is stably performed without interference.
(實施例31) (Example 31)
在已形成匯流排電極圖案的基板上,進行與實施例3相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.4μm。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 3 was carried out to form an insulating film. The formed insulating film did not generate bubbles or cracks, and the value of H1-H2 was 0.4 μm.
使用所獲得的前面板及實施例28所獲得的背面板,進行與實施例29相同的操作,完成電漿顯示器面板。 Using the obtained front panel and the back panel obtained in Example 28, the same operation as in Example 29 was carried out to complete the plasma display panel.
真空度到達5.0×10-5Pa的時間為240分鐘而無問題。所獲得的電漿顯示器係穩定地進行誘發放電且無干擾之發生而為良好者。 The time when the degree of vacuum reached 5.0 × 10 -5 Pa was 240 minutes without problems. The obtained plasma display is excellent in that the induced discharge is stably performed without interference.
(實施例32) (Example 32)
在已形成匯流排電極圖案的基板上,進行與實施例5相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.8μm。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 5 was carried out to form an insulating film. The insulating film formed did not generate bubbles or cracks, and the value of H1-H2 was 0.8 μm.
使用所獲得的前面板及實施例28所獲得的背 面板,進行與實施例29相同的操作,完成電漿顯示器面板。 Using the obtained front panel and the back obtained in Example 28 The panel was subjected to the same operation as in Example 29 to complete the plasma display panel.
真空度到達5.0×10-5Pa的時間為230分鐘而無問題。所獲得的電漿顯示器係穩定地進行誘發放電。干擾在初期發生於1處然後消除,在作為製品無問題的範圍。 The time when the degree of vacuum reached 5.0 × 10 -5 Pa was 230 minutes without problems. The obtained plasma display was stably subjected to induced discharge. The interference occurs at the first place and then eliminated, and is in the range of no problem as a product.
(比較例8) (Comparative Example 8)
在已形成匯流排電極圖案的基板上,進行與實施例8相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為0.1μm。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 8 was carried out to form an insulating film. The insulating film formed did not generate bubbles or cracks, and the value of H1-H2 was 0.1 μm.
使用所獲得的前面板及實施例28所獲得的背面板,進行與實施例29相同的操作,完成電漿顯示器面板。 Using the obtained front panel and the back panel obtained in Example 28, the same operation as in Example 29 was carried out to complete the plasma display panel.
真空度到達5.0×10-5Pa的時間為370分鐘,為大於300分鐘的結果。所獲得的電漿顯示器係於通常之電壓未進行誘發放電而為不佳者。 The time when the degree of vacuum reached 5.0 × 10 -5 Pa was 370 minutes, which was a result of more than 300 minutes. The obtained plasma display is inferior in that the normal voltage is not subjected to induced discharge.
(比較例9) (Comparative Example 9)
在已形成匯流排電極圖案的基板上,進行與實施例9相同的操作,形成絕緣膜。所形成之絕緣膜未產生氣泡或龜裂等,H1-H2之值為1.2μm。 On the substrate on which the bus bar electrode pattern was formed, the same operation as in Example 9 was carried out to form an insulating film. The insulating film formed did not generate bubbles or cracks, and the value of H1-H2 was 1.2 μm.
使用所獲得的前面板及實施例28所獲得的背面板,進行與實施例29相同的操作,完成電漿顯示器面板。 Using the obtained front panel and the back panel obtained in Example 28, the same operation as in Example 29 was carried out to complete the plasma display panel.
真空度到達5.0×10-5Pa的時間為210分鐘而無問題。所獲得之電漿顯示器係穩定地進行誘發放電但同時頻繁發生干擾而為不佳者。 The time when the degree of vacuum reached 5.0 × 10 -5 Pa was 210 minutes without problems. The obtained plasma display is inferior in that the induced discharge is stably performed while the disturbance frequently occurs.
本發明之絕緣膜之形成方法係能夠利用於電漿顯示器元件的製造。 The method of forming an insulating film of the present invention can be utilized in the manufacture of a plasma display element.
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