TWI590342B - 金屬燒結調配物及其於連接組件之用途 - Google Patents

金屬燒結調配物及其於連接組件之用途 Download PDF

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Publication number
TWI590342B
TWI590342B TW104115436A TW104115436A TWI590342B TW I590342 B TWI590342 B TW I590342B TW 104115436 A TW104115436 A TW 104115436A TW 104115436 A TW104115436 A TW 104115436A TW I590342 B TWI590342 B TW I590342B
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metal
components
sintering
weight
component
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TW104115436A
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TW201618194A (zh
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渥夫岡 史密特
湯瑪士 奎博斯
麥克 沙佛
蘇珊妮 克勞迪亞 達奇
偵斯 納崔那
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賀利氏德國有限責任兩合公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/068—Flake-like particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • B22F2301/255—Silver or gold
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Description

金屬燒結調配物及其於連接組件之用途
本發明係關於一種金屬燒結調配物，及一種連接組件之方法，該方法中使用該金屬燒結調配物。
在電力及消費電子裝置中，具有高度壓力及溫度敏感性之組件諸如LED或極薄矽晶片之連接特別具有挑戰性。
為此，該等具有壓力及溫度敏感性之組件通常係藉助於膠合彼此連接。然而，黏著技術與其在組件之間產生僅包含低導熱性及/或導電性之接觸部位之缺點相關。
為解決此問題，通常使待連接的組件進行燒結。燒結技術係一種以穩定方式連接組件之極簡單的方法。
已知在電力電子裝置中在燒結製程中使用金屬燒結調配物以連接組件。例如，WO2011/026623 A1揭示一種金屬燒結膠，其包含75至90重量%(重量百分比)之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬、0至12重量%之至少一種金屬前驅物、6至20重量%之至少一種溶劑、及0.1至15重量%之至少一種燒結助劑，及一種以該金屬燒結調配物藉助燒結方法於連接組件之用途。
本發明之目標係提供一種以穩定方式連接組件之燒結方法。該方法意欲用於在待連接之組件之間產生具有低孔隙度及高導電性及導熱性之接觸部位。
本發明之另一目標係提供一種特別適於實施該燒結方法之金屬燒結調配物。
本發明係關於一種連接組件之方法，該方法包括提供(a)包含至少(a1)一個組件1、(a2)一個組件2、及(a3)在組件1與組件2之間之金屬燒結調配物之夾層配置、及(b)使該夾層配置燒結，藉此，該金屬燒結調配物包含(A)50至90重量%之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬、及(B)6至50重量%之有機溶劑，其中組分(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在40,000至80,000cm-1範圍內。
本發明進一步關於一種包含(A)50至90重量%之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬、及(B)6至50重量%之有機溶劑之金屬燒結調配物，其中組分(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在40,000至80,000cm-1範圍內。
壓實密度係定義為相較裝填密度而言在藉由壓實或搖實固體而進一步壓緊後之密度。依照DIN EN ISO 787-11：1995-10(早期版本：(DIN 53194))來測定壓實密度(g/cm3)。
通過BET測量依照DIN ISO 9277：2014-01(依照第6.3.1章，統計學體積測量程序，使用氣體：氮氣)來測定比表面積(m2/g)。
本發明之金屬燒結調配物在第一實施例中包含50至90重量%，例如77至89重量%，更佳78至87重量%，且甚至更佳78至86重量%，及在第二實施例中包含例如50至80重量%，及更佳55至75重量%之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬。當前給定的重量包括位於顆粒上之塗層化合物之重量。
在經塗覆金屬顆粒之背景內容中所用之術語「金屬」將包含純金屬及金屬合金。
在本發明之範疇中，術語「金屬」係指元素週期系統中位於與 硼相同週期但在硼左側、位於與矽相同週期但在矽左側、位於與鍺相同週期但在鍺左側、及位於與銻相同週期但在銻左側之元素、以及具有大於55之原子序數之所有元素。
在本發明之範疇中，純金屬應理解為係包含至少95重量%，較佳至少98重量%，更佳至少99重量%，且甚至更佳至少99.9重量%純度金屬之金屬。
根據一較佳實施例，該金屬係銅、銀、金、鎳、鈀、鉑或鋁，尤其係銀。
金屬合金應理解為係至少一者係金屬之至少兩種組分之金屬混合物。
根據一較佳實施例，使用包含銅、鋁、鎳及/或貴重金屬之合金作為金屬合金。
該金屬合金較佳包含至少一種選自由銅、銀、金、鎳、鈀、鉑、及鋁組成之群之金屬。尤佳之金屬合金包含至少兩種選自由銅、銀、金、鎳、鈀、鉑及鋁組成之群之金屬。
除此之外，選自由銅、銀、金、鎳、鈀、鉑、及鋁組成之群之金屬分率可較佳佔該金屬合金之至少90重量%，更佳至少95重量%，且甚至更佳至少99重量%。該合金可例如係包含銅及銀、銅、銀及金、銅及金、銀及金、銀及鈀、鉑及鈀或鎳及鈀之合金。
本發明之金屬燒結調配物可包含作為金屬之純金屬、多種類型之純金屬、一種類型之金屬合金、多種類型之金屬合金或其混合物。
該金屬係呈顆粒形式存於該金屬燒結調配物中。
該等金屬顆粒之形狀可不同。該等金屬顆粒可例如呈薄片形式、呈不規則形狀顆粒存在，或係球形(似球)。根據一尤佳實施例，該等金屬顆粒係薄片形狀或具有不規則形狀。然而，此不排除使用呈不同形狀使用之小部分顆粒。然而，較佳至少70重量%，更佳至少80 重量%，甚至更佳至少90重量%或100重量%之該等顆粒係呈薄片形式存在。
已驚人地發現使用本發明之金屬燒結調配物製得之燒結化合物之堅實性(solidity)特別大，或換言之，藉由使用本發明之金屬燒結調配物燒結結合之組件之間之結合特別顯著。因此本發明必需使得組件(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在40,000至80,000cm-1，較佳50,000至70,000cm-1範圍內。
換言之，組分(A)之金屬顆粒須基於其壓實密度及/或其比表面積來選擇使得壓實密度與比表面積之數學乘積為在40,000至80,000cm-1範圍內之值。本發明之基本特徵(即，組分(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在40,000至80,000cm-1範圍內)係指組分(A)之金屬顆粒之整體性。例如，本發明之金屬燒結調配物之組分(A)可僅包含一種類型之金屬顆粒，該等金屬顆粒之特徵係壓實密度與比表面積在計算此等兩個參數之乘積時獲得在40,000至80,000cm-1範圍內之值。若本發明之金屬燒結調配物之組分(A)包含兩種或更多種不同類型之金屬顆粒，則個別類型之定量分率必須隨其各別壓實密度與比表面積變化來選擇使得組分(A)之金屬顆粒之完整性滿足本發明所需要的特徵。此可以兩種方法中之一種方法來達成。不同類型之金屬顆粒之組合可基於類型及量來產生，可接著均勻地混合，且接著可測量混合物之壓實密度及比表面積，且接著可計算如此測得的壓實密度與比表面積之乘積。作為一等效結果之替代，可使用不同類型金屬顆粒之壓實密度及比表面積之已知值(例如，對應之製造商資訊)以數學方法確定壓實密度與比表面積之乘積。
塗覆該等金屬顆粒。
術語顆粒之塗層應理解為係指顆粒表面上之堅固黏著層。
金屬顆粒之塗層包含至少一種類型之塗層化合物。
該等塗層化合物係有機化合物。
充作塗層化合物之有機化合物係防止該等金屬顆粒聚結之含碳化合物。
根據一較佳實施例，該等塗層化合物具有至少一個官能基。可能的官能基尤其包含羧酸基、羧酸酯基、酯基、酮基、醛基、胺基、醯胺基、偶氮基、醯亞胺基或腈基。羧酸基及羧酸酯基係較佳的官能基。羧酸基可係去質子化。
具有至少一個官能基之塗層化合物較佳係飽和、單不飽和或多不飽和有機化合物。
除此之外，該等具有至少一個官能基之塗層化合物可係分支鏈或非分支鏈。
該等具有至少一個官能基之塗層化合物較佳包含1至50個，更佳2至24個，甚至更佳6至24個，及又更佳8至20個碳原子。
該等塗層化合物可係離子性或非離子性。
較佳使用游離脂肪酸、脂肪酸鹽或脂肪酸酯作為塗層化合物。
該等游離脂肪酸、脂肪酸鹽、及脂肪酸酯較佳係非分支鏈。
除此之外，該等游離脂肪酸、脂肪酸鹽、及脂肪酸酯較佳係飽和。
較佳之脂肪酸鹽包括銨、單烷基銨、二烷基銨、三烷基銨、鋁、銅、鋰、鈉、及鉀鹽。
烷酯特定言之甲酯、乙酯、丙酯、及丁酯係較佳酯。
根據一較佳實施例，該等游離脂肪酸、脂肪酸鹽或脂肪酸酯係具有8至24個，更佳10至24個，且甚至更佳12至18個碳原子之化合物。
較佳之塗層化合物包括辛酸(caprylic acid/octanoic acid)、癸酸(capric acid/decanoic acid)、月桂酸(十二烷酸)、肉豆蔻酸(十四烷 酸)、棕櫚酸(十六烷酸)、珠光脂酸(十七烷酸)、硬脂酸(十八烷酸)、花生酸(二十酸/二十烷酸)、蘿酸(二十二烷酸)、木蠟酸(二十四烷酸)及對應之酯及鹽。
尤佳之塗層化合物包括十二烷酸、十八烷酸、硬脂酸鋁、硬脂酸銅、硬脂酸鈉、硬脂酸鉀、棕櫚酸鈉、及棕櫚酸鉀。
該等塗層化合物可藉由自先前技術已知的習知方法施覆至金屬顆粒之表面。
可例如在溶劑中漿化該等塗層化合物，特定言之上文提及之硬脂酸鹽或棕櫚酸鹽，及在球磨機中一起研磨該等漿化的塗層化合物及金屬顆粒。在研磨之後，乾燥經該等塗層化合物塗覆之金屬顆粒且接著移除粉塵。
較佳地，整個塗層中有機化合物之分率，特定言之選自由具有8至24個，更佳10至24，且甚至更佳12至18個碳原子之游離脂肪酸、脂肪酸鹽或脂肪酸酯組成之群之化合物之分率，係至少60重量%，更佳至少70重量%，甚至更佳至少80重量%，又更佳至少90重量%，尤其至少95重量%，至少99重量%或100重量%。
通常，該等塗層化合物之分率，較佳選自由具有8至24個，更佳10至24個，且甚至更佳12至18個碳原子之游離脂肪酸、脂肪酸鹽或脂肪酸酯組成之群之塗層化合物之分率係佔經塗覆之金屬顆粒之重量之0.01至2重量%，較佳0.3至1.5重量%。
定義為塗層化合物之質量與金屬顆粒之表面積之比率之塗覆程度較佳係每平方米(m2)金屬顆粒表面積0.00005至0.03g，更佳0.0001至0.02g塗層化合物。
本發明之金屬燒結調配物包含6至50重量%，在上述第一實施例中例如7至25重量%，更佳8至20重量%，及在上述第二實施例中例如15至40重量%，更佳15至35重量%之有機溶劑(即，一或多種有機溶 劑)。此尤其關於通常用於金屬燒結調配物之有機溶劑。實例包括萜品醇、N-甲基-2-吡咯啶酮、乙二醇、二甲基乙醯胺、1-十三醇、2-十三醇、3-十三醇、4-十三醇、5-十三醇、6-十三醇、異十三醇(除了倒數第二C原子上之甲基取代以外)、未經取代之1-羥基-C16-C20-烷烴(諸如16-甲基十七烷-1-醇)、二元酯(較佳係戊二酸、己二酸或琥珀酸之二甲酯或其混合物)、甘油、二乙二醇、甲二醇、及具有5至32個C原子，更佳10至25個C原子，且甚至更佳16至20個C原子之脂族烴(尤其係飽和脂族烴)。該等脂族烴係例如由Exxon Mobil以商標名Exxsol D120或商標名Isopar M出售。
本發明之金屬燒結調配物可包含0至12重量%，較佳0.1至12重量%，更佳1至10重量%，且甚至更佳2至8重量%之至少一種金屬前驅物(C)。
在本發明之範疇中，金屬前驅物應理解為意指包含至少一種金屬之化合物。較佳地，該化合物在低於200℃之溫度下分解同時釋放金屬。因此，金屬前驅物於燒結製程中之用途較佳造成原位產生金屬。容易確定化合物是否係金屬前驅物。例如，可在具有銀表面之基板上沉積包含待測試之化合物之膠，接著加熱至200℃，且維持該溫度20分鐘。接著，測試待測試的化合物是否在此等條件下分解。針對此目的，例如，可在測試之前對含金屬膠組分之內容物稱重以計算金屬之理論質量。於該測試後，藉由重量分析方法測定沉積於基板上之材料之質量。若沉積於基板上之材料之質量等於金屬之理論質量，考慮常見測量誤差，則該測試化合物係金屬前驅物。
根據一較佳實施例，該金屬前驅物係可吸熱分解之金屬前驅物。一可吸熱分解之金屬前驅物應理解為係其較佳在保護性氣體氛圍中之熱分解係吸熱過程之金屬前驅物。該熱分解造成金屬自金屬前驅物釋放。
根據另一較佳實施例，該金屬前驅物包含亦呈金屬顆粒(A)存在之金屬。
該金屬前驅物較佳包含呈金屬之至少一種選自由銅、銀、金、鎳、鈀、及鉑組成之群之元素。
可較佳使用以上指定金屬之可吸熱分解碳酸鹽、乳酸鹽、甲酸鹽、檸檬酸鹽、氧化物或脂肪酸鹽(較佳係具有6至24個碳原子之脂肪酸鹽)作為金屬前驅物。
在特定實施例中，使用碳酸銀、乳酸銀(I)、甲酸銀(II)、檸檬酸銀、氧化銀(例如AgO或Ag2O)、乳酸銅(II)、硬脂酸銅、氧化銅(例如Cu2O或CuO)或氧化金(例如Au2O或AuO)作為金屬前驅物。
根據一尤佳實施例，使用碳酸銀、氧化銀(I)或氧化銀(II)作為金屬前驅物。
該金屬前驅物(若存在於金屬燒結調配物中)較佳呈顆粒形式存在。
該等金屬前驅物顆粒可係薄片、不規則形狀或球形(似球)形狀。較佳地，該等金屬前驅物顆粒係呈薄片或呈不規則形狀顆粒形式存在。
除此之外，本發明之金屬燒結調配物可包含0至10重量%，較佳0至8重量%之至少一種燒結助劑(D)。燒結助劑之實例包括有機過氧化物、無機過氧化物、及無機酸，諸如例如WO2011/026623 A1中所述。
除上文所列組分(A)至(D)之外，本發明之金屬燒結調配物可包含一或多種其他組分(E)，總量範圍在0至15重量%，較佳0至10重量%，更佳0.1至5重量%。
該等其他組分可較佳係常用於金屬燒結調配物中之組分。該金屬燒結調配物可包含例如作為其他組分之分散劑、表面活性劑、消泡 劑、結合劑、聚合物(諸如纖維素衍生物，例如甲基纖維素、乙基纖維素、乙基甲基纖維素、羧基纖維素、羥丙基纖維素、羥乙基纖維素、羥甲基纖維素)及/或黏度控制(流變)劑。
針對組分(A)至(E)指定的重量%分率可累加(例如)達相對本發明之金屬燒結調配物(即，其施覆之前)計100重量%。因此，本發明之金屬燒結調配物可藉由混合組分(A)至(E)來製得。在該情況中可使用熟習此項技藝者已知的裝置，諸如攪拌器及三輥研磨機。
燒結製程中可使用本發明之金屬燒結調配物。燒結應理解為意指藉由加熱使兩個或更多個組件連接而金屬顆粒(A)不到達液相。
通過使用本發明之金屬燒結調配物實施之燒結方法可在施加壓力或不施加壓力來實施。可在無壓力下實施該燒結方法意指不論先前施加壓力達成組件間之足夠堅固連接。可在無壓力下實施該燒結製程容許在該燒結方法中使用壓力敏感性例如易碎性組件或具有機械敏感性微結構之組件。具有機械敏感性微結構之電子組件在曝露於無法接受的壓力時遭遇到電故障問題。
使至少兩個組件連接應理解為意指使第一組件附著在第二組件上。在此情況中，「在...上」簡單意指該第一組件之表面係連接至該第二組件之表面，而與該等兩個組件或包含該至少兩個組件之配置之相對定位無關。
在本發明之範疇中，術語組件較佳包含單一部件。較佳地，該等單一部件無法進一步拆卸。
根據特定實施例，術語組件係指用於電子裝置中之部件。
因此，該等組件可例如係二極體、LED(發光二極體(lichtemittierende Dioden))、DCB(直接銅結合)基板、DAB(直接鋁結合)基板、AMB(主動金屬銅焊)基板、引線框架、晶粒、IGBT(絕緣閘極雙極性電晶體(Bipolartransistoren mit isolierter Gate-Elektrode))、 IC(積體電路(integrierte Schaltungen))、感測器、散熱元件(較佳係鋁散熱元件或銅散熱元件)或其他被動組件(諸如電阻器、電容器或線圈)。
待連接之組件可係相同或不同組件。
本發明之實施例係關於連接LED至引線框架，連接LED至陶瓷基板，連接晶粒、二極體、IGBT或IC至引線框架、陶瓷基板、DCB、DAB或AMB基板，連接感測器至引線框架或陶瓷基板。該連接可關於電子裝置組件之鋁、銅或銀接觸表面連接至基板之鋁、銅或銀接觸表面，即，可形成例如鋁-銅、鋁-銀、鋁-鋁、銅-銀、銅-銅或銀-銀連接。
本文中使用之術語「鋁、銅、及銀接觸表面」包括由鋁、銅、及銀合金製成之接觸表面。
該等組件例如組件1及2中之至少一者可只要其等總之非由金屬組成則包括至少一個例如由非貴重金屬諸如銅或鋁製成之例如呈金屬化層形式之金屬接觸表面，藉此在本發明之方法之範疇中實現前述夾層配置。該金屬化層較佳係該組件之一部分。較佳地，該金屬化層係位於該組件之至少一個表面。
較佳地，藉助於本發明之金屬燒結調配物連接該等組件係藉由該一或多個金屬化層來實現。
該金屬化層可包含純金屬。因此，該金屬化層可較佳包含至少50重量%，更佳至少70重量%，甚至更佳至少90重量%或100重量%之純金屬。該純金屬係(例如)選自由鋁、銅、銀、金、鈀、及鉑組成之群。
另一方面，該金屬化層可不妨包含合金。該金屬化層之合金較佳包含至少一種選自由鋁、銀、銅、金、鎳、鈀、及鉑組成之群之金屬。
該金屬化層可不妨具有多層結構。因此，待連接之組件之至少一個表面可較佳包含由多個包含上文指定的純金屬及/或合金之層製成之金屬化層。
在本發明之方法中，至少兩個組件係藉由燒結彼此連接。
針對此目的，首先使該等兩個組件彼此接觸。藉助於本發明之金屬燒結調配物來實現該接觸。針對此目的，提供一種配置，其中本發明之金屬燒結調配物係位於每兩個該至少兩個組件之間。
因此，若意欲使兩個組件(即，組件1及組件2)彼此連接，則在燒結製程之前使本發明之金屬燒結調配物位於組件1與組件2之間。另一方面，假設使多於兩個組件彼此連接。例如三個組件(即，組件1、組件2、及組件3)可以適宜方式彼此連接使得組件2位於組件1與組件3之間。在此情況中，本發明之金屬燒結調配物係位於組件1與組件2之間及位於組件2與組件3之間。
該等個別組分係呈夾層配置存在及彼此連接。夾層配置應理解為意指其中兩個組件中之一者位於另一者之上且該等兩個組件基本上相對於彼此平行配置之配置。
可根據先前技術中已知的任何方法產生至少兩個組件及本發明之金屬燒結調配物之配置，其中該金屬燒結調配物係位於該配置之兩個組件之間。
較佳地，首先，對組件1之至少一個表面提供本發明之金屬燒結調配物。接著，另一組件2以其一個表面置於已施覆至組件1之表面的金屬燒結調配物上。
本發明之金屬燒結調配物可藉由習知方法，諸如藉由施配技術(例如施配或噴射施配)或印刷方法(諸如網版印刷或模版印刷)或不妨藉由其他施覆技術(諸如噴射施覆、針板轉移或浸漬)來施覆至組件之表面。
在施覆本發明之金屬燒結調配物後，較佳藉助於該金屬燒結調配物使該組件之已提供有金屬燒結調配物之表面與該組件之待連接至其之表面接觸。因此，本發明之金屬燒結調配物之層位於待連接之組件之間。
較佳地，介於待連接之組件間之濕層之厚度係在20至100μm範圍內。在此情況中，該濕層之厚度應理解為意指在乾燥前(若存在的話)及在燒結前待連接之組件之相對表面之間的距離。該濕層之較佳厚度取決於選用以施覆金屬燒結調配物方法。若例如藉助於網版印刷法來施覆該金屬燒結調配物，則該濕層之厚度可較佳為20至50μm。若藉助於模版印刷來施覆該金屬燒結調配物，則該濕層之較佳厚度可在20至100μm範圍內。在施配技術中該濕層之較佳厚度可在10至100μm範圍內。
作為一選項，可在燒結之前進行乾燥步驟，即，自該施覆之金屬燒結調配物移除該有機溶劑。根據一較佳實施例，乾燥後金屬燒結調配物中之有機溶劑之分率為相對本發明之金屬燒結調配物中(即，準備用於施覆之金屬燒結調配物中)之有機溶劑之分率計例如0至5重量%。換言之，根據該較佳實施例，於乾燥期間移除例如95至100重量%之本發明之金屬燒結調配物中原始存在之有機溶劑。
若在無壓力之燒結製程中進行乾燥，則該乾燥可在產生該配置之後，即，在使待連接之組件接觸之後進行。若在涉及施加壓力之燒結製程中進行乾燥，則該乾燥可不妨在施覆該金屬燒結調配物至該組件之至少一個表面上之後但與待連接之組件接觸之前進行。
較佳地，該乾燥溫度係在100至180℃範圍內。
明顯地，該乾燥時間取決於本發明之金屬燒結調配物之組成及待燒結之配置之連接表面之大小。常用乾燥時間係在5至45分鐘範圍內。
使由至少兩個該等組件及位於該等組件之間之金屬燒結調配物組成之配置最終經歷燒結製程。
該等實際燒結製程進行係在施加或未施加壓力之製程中在例如200至280℃之溫度下。
壓力燒結中之製程壓力較佳係小於30MPa且更佳小於5MPa。例如，該製程壓力係在1至30MPa範圍內且更佳係在1至5MPa範圍內。
該燒結時間係(例如)在壓力燒結中在2至90分鐘範圍內，例如在2至5分鐘範圍內及例如在無壓力燒結中在15至90分鐘範圍內。在本發明之範疇中，該燒結時間應理解為是在燒結製程期間之時間期，在該期間中待燒結之金屬燒結調配物係曝露於>180℃之溫度。
該燒結製程可在不受任何特定限制之氛圍中進行。因此，一方面，該燒結可在含氧氛圍中進行。另一方面，該燒結可不妨在無氧氛圍中進行。在本發明之範疇中，無氧氛圍應理解為意指氧含量不大於100ppm，較佳不大於10ppm，且甚至更佳不大於0.1ppm之氛圍。
該燒結係在習知的用於燒結之適宜裝置中進行，在該等裝置中可設定上述製程參數。
藉由下文實例來說明本發明，然而，此等實例可不解釋為(諸如)以任何方式或形式限制本發明。
實例：
該等實例中使用以下各包含脂肪酸塗層之銀薄片：
1.製造銀燒結調配物：
首先，藉由混合根據下表之個別組分來製造本發明之銀燒結調配物1至4、5至8及參考調配物V1至V3。給定的所有量係以重量%單位計。
2.銀燒結調配物1至4及V1之施覆及無壓力燒結：
藉由施配至提供有銀層之DCB基板之銀表面上且/或施配至DCB基板之銅表面上來施覆各種銀燒結調配物，該濕層厚度為50μm。接著，使該施覆的銀燒結調配物在未事先乾燥下與具有銀接觸表面(2‧2mm2)之矽晶片接觸。依照以下加熱曲線在氮氣氛圍(<100ppm之氧)中進行隨後之無壓力燒結：以60分鐘時間持續加熱接觸部位至200℃，接著以5分鐘時間加熱至230℃，並維持於該溫度30分鐘。然後，以50分鐘時間使其穩定地冷卻至30℃。
在燒結之後，藉由測試剪切強度來確定結合。在此情況中，用剪切鑿子在260℃以0.3mm/s之速率剪段組件。藉助於荷重計(DAGE 2000裝置，由德國DAGE製造)測定剪切力。
下表顯示所獲得的結果：
3.銀燒結調配物5至8、V2、及V3之施覆及壓力燒結：
藉由模版印刷將各銀燒結調配物施覆至提供有銀層之DCB基板之銀表面上及/或施覆至DCB基板之銅表面上，該濕層厚度為50μm。隨後，在120℃下乾燥如此施覆的銀燒結調配物20分鐘。接著，在160℃下施覆具有銀接觸表面(2‧2mm2)之矽晶片且接著利用壓力燒結壓力機在230℃及10MPa之壓力下繼續進行燒結3分鐘。
如在測試系列2中測定黏著力：

Claims (11)

  1. 一種金屬燒結調配物，其包含(A)50至90重量%之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬、及(B)6至50重量%之有機溶劑，其特徵為組分(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在40,000至80,000cm-1範圍內。
  2. 如請求項1之金屬燒結調配物，其中組件(A)之金屬顆粒之壓實密度與比表面積之數學乘積係在50,000至70,000cm-1範圍內。
  3. 如請求項1之金屬燒結調配物，其包含一種、兩種或更多種不同類型之金屬顆粒。
  4. 如請求項1之金屬燒結調配物，其中該至少一種金屬係選自由銅、銀、金、鎳、鈀、鉑、及鋁組成之群。
  5. 如請求項1之金屬燒結調配物，其中該等金屬顆粒係薄片或不規則形狀。
  6. 如請求項1之金屬燒結調配物，其中該至少一種有機化合物係選自由游離脂肪酸、脂肪酸鹽、及脂肪酸酯組成之群。
  7. 如請求項1之金屬燒結調配物，其除組分(A)及(B)之外亦包含0至12重量%之至少一種金屬前驅物(C)、0至10重量%之至少一種燒結助劑(D)、及0至15重量%之一或多種其他的選自分散劑、表面活性劑、消泡劑、結合劑、聚合物及/或黏度控制(流變)劑之組分(E)。
  8. 一種連接組件之方法，其中(a)提供夾層配置，其包含至少(a1)一個組件1、(a2)一個組件2、及(a3)一種位於組件1與組件2之間之如前述請求項中任一項之金屬燒結調配物，及其中(b)使該夾層配置進行燒結。
  9. 如請求項8之方法，其中組件1及2中之至少一者包含鋁接觸表面或銅接觸表面，藉助於該鋁接觸表面或銅接觸表面來實施該夾層配置。
  10. 如請求項8之方法，其中該燒結在施加壓力或不施加壓力的同時進行。
  11. 如請求項8之方法，其中該等組件係用於電子裝置中之部件。
TW104115436A 2014-11-03 2015-05-14 金屬燒結調配物及其於連接組件之用途 TWI590342B (zh)

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