TWI588406B - Light-emitting apparatus - Google Patents

Light-emitting apparatus Download PDF

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TWI588406B
TWI588406B TW104131670A TW104131670A TWI588406B TW I588406 B TWI588406 B TW I588406B TW 104131670 A TW104131670 A TW 104131670A TW 104131670 A TW104131670 A TW 104131670A TW I588406 B TWI588406 B TW I588406B
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light
carrier
emitting
secondary carrier
main carrier
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TW104131670A
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Chinese (zh)
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TW201712271A (en
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陳柏璋
郭家泰
謝明勳
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晶元光電股份有限公司
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Description

發光裝置Illuminating device

本發明係關於一種發光裝置,尤關於一種具有均勻光場之發光裝置。The present invention relates to a light-emitting device, and more particularly to a light-emitting device having a uniform light field.

發光二極體(Light-Emitting Diode;LED)具有耗能低、壽命長、體積小、反應速度快、以及光學輸出穩定等特性,因此逐漸取代傳統之照明光源被應用於各式家用照明裝置中。但是,發光二極體是一種點光源,且多數光線通常僅朝單一方向放射,因此要產生類似白熾燈泡的全周光光場往往需要使用繁複的結構設計或製造流程。Light-Emitting Diode (LED) has the characteristics of low energy consumption, long life, small size, fast response, and stable optical output. Therefore, it gradually replaces the traditional illumination source and is used in various household lighting devices. . However, a light-emitting diode is a point source, and most of the light is usually only radiated in a single direction, so the production of a full-period light field like an incandescent bulb often requires complicated structural design or manufacturing processes.

本發明係揭露一種發光裝置,包含一主載板,具有一第一板邊及一第二板邊;一突出部,自第一板邊延伸且具有一第一表面以及一與此第一表面相對之第二表面,其中,第一表面與第二板邊共平面。一次載板,自第二表面延伸,並與突出部具有一傾斜角。一第一發光單元位於次載板上。The present invention discloses a light-emitting device comprising a main carrier having a first edge and a second edge; a projection extending from the first edge and having a first surface and a first surface In contrast to the second surface, wherein the first surface is coplanar with the second plate edge. A carrier plate extends from the second surface and has an oblique angle with the protrusion. A first lighting unit is located on the secondary carrier board.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,說明如下。The above and other objects, features, and advantages of the present invention will become more apparent and understood.

以下實施例將伴隨圖式說明本發明之概念,在圖式或說明中,相似或相同之部分係使用相同之標號,並且在圖式中,元件之形狀或厚度可以擴大或是縮小。The present invention will be described with reference to the drawings, in which the same or the same reference numerals are used, and in the drawings, the shape or thickness of the elements may be expanded or reduced.

第1A圖顯示本發明一實施例中一發光組件100之立體示意圖。發光組件100包含一載板10、複數個發光單元11、16設置於載板10上、電極12A、12B分別為正負極且設置於載板10上、及一導線結構(圖未示)使複數個發光單元11、16之間產生電性連接。載板10包含一主載板102、四個突出部103A、103B、103C、103D、以及四個次載板101A、101B、101C、101D。發光單元16與電極12A、12B位於主載板102的同一側。於另一實施例中,電極12A、12B與發光單元16位於主載板102的相反側。FIG. 1A is a perspective view showing a light-emitting assembly 100 according to an embodiment of the present invention. The light-emitting assembly 100 includes a carrier 10, a plurality of light-emitting units 11, 16 are disposed on the carrier 10, electrodes 12A and 12B are positive and negative electrodes respectively, and are disposed on the carrier 10, and a wire structure (not shown) An electrical connection is made between the light emitting units 11, 16. The carrier 10 includes a main carrier 102, four protrusions 103A, 103B, 103C, 103D, and four secondary carriers 101A, 101B, 101C, 101D. The light emitting unit 16 and the electrodes 12A, 12B are located on the same side of the main carrier 102. In another embodiment, the electrodes 12A, 12B and the light emitting unit 16 are located on opposite sides of the main carrier 102.

在本實施例中,主載板102具有一四邊形的形狀及四個板邊1021、1022、1023、1024,並定義一通過主載板102之形心且垂直於主載板102的中心軸C 。在此,主載板102係涵蓋近似四邊形的區域。突出部103A、103B、103C、103D分別具有一四邊形的形狀,且分別位於主載板102之四個角落(corner)。突出部103A、103B、103C、103D各自從主載板102的四個板邊1021、1022、1023、1024向外凸出且係於XY平面上朝不同方向延伸。突出部103A、103B、103C、103D係與主載板102大體上共平面。在一實施例中,突出部103A、103B、103C、103D與主載板102為一體成形,並無額外的連接件形成於兩者之間。再者,突出部103A、103B、103C、103D各自具有一第一表面與主載板102之板邊1021、1022、1023、1024共平面。如第1A圖及第1C圖所示,以突出部103D為例,突出部103D係自板邊1024朝X方向延伸,且突出部103D之第一表面1031與板邊1023共平面。突出部103D與主載板102相連接的長度(H1)小於1/3的主載板102之板邊1024的長度(H2)。突出部103A、103B、103C與主載板102的關係可參考前述突出部103D之內容,於此不再贅述。In the present embodiment, the main carrier 102 has a quadrangular shape and four plate sides 1021, 1022, 1023, 1024, and defines a centroid passing through the center of the main carrier 102 and perpendicular to the central axis C of the main carrier 102. . Here, the main carrier 102 covers an area of an approximately quadrilateral shape. The protruding portions 103A, 103B, 103C, and 103D each have a quadrangular shape and are respectively located at four corners of the main carrier 102. The protrusions 103A, 103B, 103C, 103D each protrude outward from the four board sides 1021, 1022, 1023, 1024 of the main carrier board 102 and extend in different directions on the XY plane. The projections 103A, 103B, 103C, 103D are substantially coplanar with the main carrier 102. In one embodiment, the projections 103A, 103B, 103C, 103D are integrally formed with the main carrier 102 without additional connectors being formed therebetween. Furthermore, the protrusions 103A, 103B, 103C, 103D each have a first surface coplanar with the board edges 1021, 1022, 1023, 1024 of the main carrier 102. As shown in FIGS. 1A and 1C, the protruding portion 103D is extended from the plate side 1024 in the X direction, and the first surface 1031 of the protruding portion 103D is coplanar with the plate edge 1023. The length (H1) of the protruding portion 103D connected to the main carrier 102 is less than 1/3 of the length (H2) of the board side 1024 of the main carrier 102. For the relationship between the protruding portions 103A, 103B, and 103C and the main carrier 102, reference may be made to the content of the protruding portion 103D, and details are not described herein again.

參照第1A~1B圖,突出部103A、103B、103C、103D各自具有一相對於第一表面之第二表面。次載板101A、101B、101C、101D各自從相對應之突出部103A、103B、103C、103D的第二表面大致上朝Z軸方向延伸。如第1B圖所示,以次載板101D為例,次載板101D具有一彎折區101D1自突出部103D之第二表面1032向外延伸(Y軸方向),以及一延伸區101D2以一傾斜角θ自彎折區101D1朝上延伸(Z軸方向),其中,θ定義為延伸區101D2與突出部103D的夾角,其可為 0° ~345°。於一實施例中,θ皆介於90°~145°。類似的,次載板101A、101B、101C與相對應之突出部103A、103B、103C亦夾一傾斜角。次載板101A~101D與各自相對應之突出部103A~103D所夾之傾斜角可以相同或不相同。例如,在另一實施例中,根據光型的設計,使一部分之傾斜角θ介於0° ~180°,另一部分之傾斜角θ介於181° ~345°。此外,次載板101A、101B、101C的相對應描述可參考次載板101D之描述,於此將不在撰述。Referring to Figures 1A-1B, the projections 103A, 103B, 103C, 103D each have a second surface relative to the first surface. The secondary carrier plates 101A, 101B, 101C, and 101D each extend substantially in the Z-axis direction from the second surface of the corresponding protruding portions 103A, 103B, 103C, and 103D. As shown in FIG. 1B, taking the secondary carrier 101D as an example, the secondary carrier 101D has a bent region 101D1 extending outward from the second surface 1032 of the protruding portion 103D (Y-axis direction), and an extended region 101D2 The inclination angle θ extends upward from the bending portion 101D1 (Z-axis direction), wherein θ is defined as an angle between the extension portion 101D2 and the protruding portion 103D, which may be 0° to 345°. In one embodiment, θ is between 90° and 145°. Similarly, the secondary carrier plates 101A, 101B, and 101C are also inclined at an oblique angle with the corresponding protruding portions 103A, 103B, and 103C. The inclination angles of the secondary carrier plates 101A to 101D and the corresponding protruding portions 103A to 103D may be the same or different. For example, in another embodiment, depending on the design of the light pattern, the inclination angle θ of one portion is between 0° and 180°, and the inclination angle θ of the other portion is between 181° and 345°. In addition, the corresponding description of the secondary carrier boards 101A, 101B, 101C can be referred to the description of the secondary carrier board 101D, which will not be described herein.

參照第1A圖及第1C圖,次載板101A、101B、101C、101D的一側邊與相對應之突出部103A、103B、103C、103D 的一第三表面彼此相距一個距離 d。為了清楚表示,第1C圖係為第1B圖旋轉90度之圖式。以次載板101D為例,次載板101D具有一側邊141與突出部103D之第三表面1033相距一個距離 d,d介於0~10 mm。次載板101A、101B、101C之一側邊與相對應之突出部103A、103B、103C之關係,可參考前開關於次載板101D與突出部103D之描述,在此不再贅述。Referring to Figs. 1A and 1C, one side of the secondary carrier plates 101A, 101B, 101C, and 101D and a third surface of the corresponding protruding portions 103A, 103B, 103C, and 103D are apart from each other by a distance d. For the sake of clarity, the 1C figure is a pattern in which the first B diagram is rotated by 90 degrees. Taking the secondary carrier 101D as an example, the secondary carrier 101D has a side 141 spaced apart from the third surface 1033 of the projection 103D by a distance d between 0 and 10 mm. For the relationship between the side of one of the sub-carriers 101A, 101B, and 101C and the corresponding protrusions 103A, 103B, and 103C, reference may be made to the description of the front switch 101D and the protrusion 103D, which will not be described herein.

如第1A圖所示,複數個發光單元11位於次載板101A~101D上,複數個發光單元16位於主載板102上。位於不同次載板101A~101D上的發光單元11分別朝向不同方向放射光線。複數個發光單元16位於主載板102上,且圍繞中心軸C以類似四邊形的形狀排列。結合發光單元11與發光單元16在不同方向上的出光,發光組件100可達到近似全周光的光型。此處全周光的定義可參考美國能源之星(ENERGY STAR)的定義。在另一實施例中,複數個發光單元16之排列方式也可以為其他形式,例如:圓形、三角形、任意多邊形、或矩陣等。視發光單元16之光電特性與發光組件100對光型的需求,發光單元16可做更緊密或是更鬆散的配置,例如,發光單元16可以同心圓方式配置,或以多層不同幾何形狀方式配置(例如,內層為單點、三角形、四邊形,外層為圓形、五角形、六角形等)。As shown in FIG. 1A, a plurality of light emitting units 11 are located on the secondary carrier plates 101A to 101D, and a plurality of light emitting units 16 are located on the main carrier 102. The light-emitting units 11 located on the different sub-boards 101A to 101D radiate light in different directions. A plurality of light emitting units 16 are located on the main carrier 102 and are arranged in a quadrangular shape around the central axis C. In combination with the light emission of the light-emitting unit 11 and the light-emitting unit 16 in different directions, the light-emitting assembly 100 can achieve an approximately full-period light pattern. The definition of full-circumference here can be found in the definition of ENERGY STAR. In another embodiment, the arrangement of the plurality of light emitting units 16 may also be in other forms, such as a circle, a triangle, an arbitrary polygon, or a matrix. Depending on the optoelectronic characteristics of the illumination unit 16 and the optical type of the illumination assembly 100, the illumination unit 16 can be configured in a tighter or more loose configuration. For example, the illumination unit 16 can be configured concentrically or in multiple layers of different geometries. (For example, the inner layer is a single point, a triangle, a quadrangle, and the outer layer is a circle, a pentagon, a hexagon, etc.).

發光組件100的次載板101A~101D為一長方形,具有一寬度及一長度。在一實施例中,次載板101A~101D之長度為18mm~30mm,寬度小於5 mm;位於次載板101A~101D上的發光單元11,該寬度為0.5 mm~1.5 mm,長度為1 mm~3 mm,並沿著次載板101A~101D的長度方向以單行的形式排列(一維陣列)。因此,次載板與位於其上的發光單元11形成一細長型的發光結構,在此定義為一燈絲(filament)結構。所以,發光組件100具有複數個燈絲結構。每個發光單元11間的距離以及數量可以視發光組件100所需的光型與亮度做適當增加或減少。在另一個實施例中,次載板101A~101D的寬度大於5mm,使得複數個發光單元11在次載板101A~101D得以複數排的形式排列(二維陣列)。The secondary carriers 101A-101D of the light-emitting assembly 100 are rectangular in shape and have a width and a length. In one embodiment, the secondary carrier plates 101A-101D have a length of 18 mm to 30 mm and a width of less than 5 mm; and the light-emitting units 11 on the secondary carrier plates 101A-101D have a width of 0.5 mm to 1.5 mm and a length of 1 mm. ~3 mm and arranged in a single row along the length direction of the secondary carriers 101A to 101D (one-dimensional array). Therefore, the secondary carrier plate and the light-emitting unit 11 located thereon form an elongated light-emitting structure, which is defined herein as a filament structure. Therefore, the light emitting assembly 100 has a plurality of filament structures. The distance and number between each of the light-emitting units 11 can be appropriately increased or decreased depending on the light type and brightness required for the light-emitting assembly 100. In another embodiment, the width of the secondary carrier plates 101A-101D is greater than 5 mm, such that the plurality of light-emitting units 11 are arranged in a plurality of rows in the secondary carrier plates 101A-101D (two-dimensional array).

主載板、突出部、與次載板可以是一體成形的結構並具有相同的材料。載板10較佳地為由導熱性佳並可彎折的材料所形成,例如:陶瓷散熱基板或金屬基印刷電路板(MCPCB)。金屬基印刷電路板包含一電路結構層以及一金屬板,電路結構層透過一絕緣介電層與金屬板相黏接,金屬板的材料為銅或鋁等熱傳導性佳的材料。由於金屬材料的導熱係數大於陶瓷材料,且陶瓷材料的導熱係數大於玻璃材料,因此當載板具有相同尺寸的條件下,發光組件100採用金屬基印刷電路板(MCPCB)作為載板10比採用陶瓷散熱基板作為載板10時,可承受較高的操作電流。發光組件100採用陶瓷散熱基板作為載板10時,比採用玻璃基板作為載板10,可承受較高的操作電流。例如,金屬基印刷電路板(MCPCB)作為載板10的發光組件100可操作電流為90~120 mA,陶瓷散熱基板作為載板10的發光組件100可操作電流為60~80 mA,玻璃基板作為載板10的發光組件100可操作電流為30~50 mA。進一步,由於陶瓷散熱基板或是金屬基印刷電路板(MCPCB)作為載板10的發光組件100,可承受較高的操作電流,相較於採用玻璃基板作為載板10的發光組件100,可配置較少的發光單元即能夠達到相同的流明值。The main carrier, the projections, and the secondary carrier may be integrally formed and have the same material. The carrier 10 is preferably formed of a material that is thermally conductive and bendable, such as a ceramic heat sink substrate or a metal-based printed circuit board (MCPCB). The metal-based printed circuit board comprises a circuit structure layer and a metal plate. The circuit structure layer is bonded to the metal plate through an insulating dielectric layer. The material of the metal plate is a material with good thermal conductivity such as copper or aluminum. Since the thermal conductivity of the metal material is greater than that of the ceramic material, and the thermal conductivity of the ceramic material is greater than that of the glass material, the light-emitting assembly 100 uses a metal-based printed circuit board (MCPCB) as the carrier 10 compared to the ceramic when the carrier has the same size. When the heat dissipating substrate is used as the carrier 10, it can withstand a high operating current. When the light-emitting device 100 uses the ceramic heat-dissipating substrate as the carrier 10, it can withstand a higher operating current than the glass substrate as the carrier 10. For example, the metal-based printed circuit board (MCPCB) as the light-emitting component 100 of the carrier 10 can operate at a current of 90 to 120 mA, and the ceramic heat-dissipating substrate can serve as a light-emitting component 100 of the carrier 10 with an operating current of 60 to 80 mA. The light-emitting assembly 100 of the carrier 10 can operate at a current of 30 to 50 mA. Further, since the ceramic heat dissipation substrate or the metal-based printed circuit board (MCPCB) is used as the light-emitting assembly 100 of the carrier 10, it can withstand a high operating current, and can be configured as compared with the light-emitting assembly 100 using the glass substrate as the carrier 10. Fewer illumination units can achieve the same lumen value.

第1D圖與第1E圖分別為發光組件100之不同實施例的等效電路示意圖。第1D圖顯示一實施例之等效電路示意圖,位於同一個次載板101A~101D上的發光單元11與位於主載板102上的發光單元16彼此串聯形成不同的發光單元串。所有的發光單元串彼此並聯,並電連接於電極12A、12B。第1E圖顯示另一實施例之等效電路示意圖,單一個次載板(101A、101B、101C或101D)上的發光單元11形成一個發光單元串,位於主載板102上的發光單元16也形成一個發光單元串。每個發光單元串彼此串聯連接,再電連接至電極12 A、12B。在另一實施例中,部分發光單元串先彼此串聯連接,再與其他發光單元串並聯,或者部分發光單元串先彼此並聯連接,再與其他發光單元串串聯。1D and 1E are respectively equivalent circuit diagrams of different embodiments of the light-emitting assembly 100. 1D is a schematic diagram showing an equivalent circuit of an embodiment. The light-emitting units 11 on the same sub-boards 101A to 101D and the light-emitting units 16 on the main carrier 102 are connected in series to form different strings of light-emitting units. All of the light emitting cell strings are connected in parallel with each other and electrically connected to the electrodes 12A, 12B. 1E is a schematic diagram showing an equivalent circuit of another embodiment. The light-emitting unit 11 on a single secondary carrier (101A, 101B, 101C or 101D) forms a light-emitting unit string, and the light-emitting unit 16 on the main carrier 102 is also A string of light emitting cells is formed. Each of the light emitting cell strings is connected in series to each other and electrically connected to the electrodes 12 A, 12B. In another embodiment, the partial light-emitting unit strings are first connected in series to each other, and further connected in series with other light-emitting units, or the partial light-emitting unit strings are first connected in parallel with each other and in series with other light-emitting unit strings.

第2A圖至第2D圖顯示當第1C圖中d=0時的發光組件100的製作流程圖。參照第2A圖,提供一四邊形載板10',電極12A、12B、以及一用以電性連接發光單元的導線結構(圖未示)形成於載板10'上。利用一切割或沖壓方式於載板10'上形成四個溝槽17,藉此定義次載板101A、101B、101C、101D、主載板102、以及突出部103A、103B、103C、103D。溝槽17具有1mm~10mm的寬度。隨後,參照第2B圖,設置發光單元11、16於主載板102以及次載板101A~101D上。2A to 2D are flowcharts showing the fabrication of the light-emitting assembly 100 when d=0 in Fig. 1C. Referring to FIG. 2A, a quadrilateral carrier 10' is provided, electrodes 12A, 12B, and a wire structure (not shown) for electrically connecting the light-emitting units are formed on the carrier 10'. Four grooves 17 are formed on the carrier 10' by a cutting or stamping method, thereby defining the secondary carrier plates 101A, 101B, 101C, 101D, the main carrier 102, and the projections 103A, 103B, 103C, 103D. The groove 17 has a width of 1 mm to 10 mm. Subsequently, referring to FIG. 2B, the light-emitting units 11, 16 are disposed on the main carrier 102 and the secondary carriers 101A to 101D.

參照第2C圖,利用測試設備T電性導通電極12A、12B,測試發光單元11、16的光電特性(例如:操作電壓、亮度)。因電極12A、12B經由導線結構電性連接到所有的發光單元11、16,當測試設備T與電極12A、12B電性導通時,可一次性地測試載板10'上所有發光單元11、16的光電特性。選擇性地,可設計載板10'上之導線結構使其可以分開或同時量測每個次載板與主載板上的發光單元。參照第2D圖,彎折次載板101A~101D以形成發光組件100。選擇性地,可利用一切割刀預先形成一折彎線(L),再沿著折彎線(L)彎折次載板101A~101D。因此,可避免於彎折過程中突出部及/或次載板101A~101D因過大的應力而斷裂。(參考第1A圖)Referring to Fig. 2C, the photoelectric characteristics (e.g., operating voltage, brightness) of the light-emitting units 11, 16 are tested by the test device T electrically conductive electrodes 12A, 12B. Since the electrodes 12A, 12B are electrically connected to all of the light emitting units 11, 16 via the wire structure, when the test device T is electrically connected to the electrodes 12A, 12B, all the light emitting units 11, 16 on the carrier 10' can be tested at one time. Photoelectric properties. Alternatively, the wire structure on the carrier 10' can be designed such that each of the secondary carrier and the illumination unit on the primary carrier can be measured separately or simultaneously. Referring to FIG. 2D, the sub-carriers 101A to 101D are bent to form the light-emitting assembly 100. Alternatively, a bending line (L) may be formed in advance by a cutting blade, and the secondary carrier plates 101A to 101D may be bent along the bending line (L). Therefore, it is possible to prevent the protruding portion and/or the secondary carrier plates 101A to 101D from being broken due to excessive stress during the bending process. (Refer to Figure 1A)

於一實施例中,發光組件100中之次載板101A~101D與主載板102以及發光單元11、16可以視為固定於一光板上(主載板102以及發光單元16)的四根燈絲(次載板101A~101D與及發光單元11)。相較於使用四根獨立的燈絲與一光板製作發光組件100,四根獨立的燈絲需要一一測試後,才能與光板進行組裝。然,利用本實施例之結構或製程可以一次性地測試所有燈絲,再彎折次載板101A~101D即可製得發光組件100,可以大幅簡化發光組件100的製作流程(減少測試步驟、縮短測試時間、以及組裝時間)。In one embodiment, the secondary carrier boards 101A-101D and the main carrier board 102 and the light-emitting units 11, 16 in the light-emitting assembly 100 can be regarded as four filaments fixed on a light board (the main carrier board 102 and the light-emitting unit 16). (Secondary boards 101A to 101D and light emitting unit 11). Compared to the use of four independent filaments and a light panel to make the light-emitting assembly 100, four separate filaments need to be tested one by one before being assembled with the light panel. However, all the filaments can be tested at one time by using the structure or process of the embodiment, and the light-emitting component 100 can be obtained by bending the secondary carrier plates 101A-101D, which can greatly simplify the manufacturing process of the light-emitting component 100 (reducing the test steps and shortening Test time, and assembly time).

第2E圖顯示依據本發明一實施例之五邊形載板10"之示意圖。第2E圖顯示載板10"未彎折之狀態。五個直線形溝槽17形成於載板10"上,藉此定義五個次載板101"A~101"E與一主載板102"。其他相關描述可參考相對應第2A圖之段落。在本實施例中,載板10"的形狀並不限於五邊形載板10"亦可以為其他多邊形,例如三角形、六角形、七邊形、八邊形等。因此,當載板為一N邊形時(N為不小於3之正整數),可形成N個溝槽以定義N個次載板與一主載板,再參考第2A~2D圖的步驟以製作一具有N個次載板的發光組件。Fig. 2E is a view showing a pentagon carrier 10" according to an embodiment of the present invention. Fig. 2E shows a state in which the carrier 10" is not bent. Five linear grooves 17 are formed on the carrier 10", thereby defining five secondary carriers 101"A-101"E and a primary carrier 102". For other related descriptions, refer to the paragraph corresponding to Figure 2A. In the present embodiment, the shape of the carrier 10" is not limited to the pentagonal carrier 10" and may be other polygons such as a triangle, a hexagon, a heptagon, an octagon or the like. Therefore, when the carrier plate is an N-sided shape (N is a positive integer not less than 3), N grooves can be formed to define N secondary carrier plates and a primary carrier plate, and then refer to steps 2A-2D. To produce a light-emitting assembly having N secondary carriers.

第2F圖顯示依據本發明一實施例之圓形載板10'"之示意圖。第2F圖顯示載板10'"未彎折之狀態。在本實施例中,三個弧形溝槽17形成於載板10'"上,藉此定義三個次載板101'"A~101'"C與一主載板102'"。在另一實施例中,亦可形成四個弧形溝槽以定義四個次載板與一主載板。因此,當形成M個弧形溝槽以定義M個次載板與一主載板(M為不小於2之正整數),再參考第2B~2D圖的步驟以製作一具有M個次載板的發光組件。Fig. 2F shows a schematic view of a circular carrier 10'" according to an embodiment of the present invention. Fig. 2F shows a state in which the carrier 10'" is not bent. In the present embodiment, three arcuate grooves 17 are formed on the carrier 10'", thereby defining three secondary carriers 101'"A-101'"C and a main carrier 102'". In another embodiment, four arcuate grooves may also be formed to define four secondary carrier plates and one primary carrier plate. Therefore, when M arcuate trenches are formed to define M secondary carrier plates and a main carrier plate (M is a positive integer not less than 2), reference is made to the steps of FIGS. 2B to 2D to make one having a secondary load. The illuminating component of the board.

第3圖顯示依據本發明另一實施例之發光組件200之立體示意圖。發光組件200包含一載板20、複數個發光單元11、16設置於載板20上、電極22A、22B分別為正負極且設置於載板20上、及一導線結構(圖未示)用以電連接發光單元11、16。發光單元16與電極22A、22B位於載板20的同一側。另一實施例中,電極22A、22B與發光單元16位於載板20的相反側。載板20包含主載板202、及四個次載板201A~201D。主載板202的外板邊具有一四邊形的形狀,並定義兩對角線A1、A2以及一通過兩對角線焦點並垂直於主載板202的中心軸C。主載板202具有四個板邊2021~2024以及四個突出部203A~203D。突出部203A~203D係具有似三角形的外型,分別從板邊2021~2024向內並往中心軸C方向延伸。以突出部203D為例,突出部203D的一底邊為主載板202的板邊2024,一弧角203D1位於靠近中心軸C處且相對於底邊或板邊2024的位置,但不碰觸到中心軸C。突出部203D的第一斜邊203D2以及第二斜邊203D3各自與相鄰的突出部203C、203A的一斜邊間隔一大於0的距離。突出部203A~203D共同定義一十字形開孔204,且十字形開孔204的位置實質上位於兩對角線A1、A2上。次載板201A~201D係分別位於兩鄰近突出部之間且大致上朝Z軸方向延伸。舉例來說,兩鄰近突出部203B、203C間的距離(H3)大於次載板201C的寬度(H4);H3-H4=1mm~10mm。發光組件200之製作流程與發光組件100類似,即先行利用切割或沖壓方式於載板20上形成溝槽,藉此定義次載板201A~201D、主載板202、以及突出部203A~203D的輪廓及位置。待利用測試設備對載板20上所有發光單元做一次性測試後,再進行彎折次載板201A~201D的步驟,以形成發光組件200。因此,在彎折步驟中,當H3> H4時有利於彎折次載板201A~201D。此外,次載板201A~201D與主載板202之夾角θ為0° ~180°。在另一實施例中,次載板201A~201D與主載板202之夾角θ為181°~345°;或者,一部分次載板之傾斜角θ介於 0° ~ 180°,且另一部分次載板之傾斜角θ介於 181°~345°。次載板201A~201D與主載板202間的連接關係可參考前開第1A圖之說明內容,在此不再贅述。Figure 3 is a perspective view showing a light-emitting assembly 200 in accordance with another embodiment of the present invention. The light-emitting assembly 200 includes a carrier 20, a plurality of light-emitting units 11 and 16 disposed on the carrier 20, electrodes 22A and 22B are positive and negative electrodes respectively, and are disposed on the carrier 20, and a wire structure (not shown) is used. The light emitting units 11, 16 are electrically connected. The light emitting unit 16 and the electrodes 22A, 22B are located on the same side of the carrier 20. In another embodiment, the electrodes 22A, 22B and the light emitting unit 16 are located on opposite sides of the carrier 20. The carrier 20 includes a main carrier 202 and four secondary carriers 201A to 201D. The outer plate edge of the main carrier plate 202 has a quadrangular shape and defines two diagonal lines A1, A2 and a central axis C passing through the two diagonal points and perpendicular to the main carrier plate 202. The main carrier 202 has four board sides 2021 to 2024 and four protrusions 203A to 203D. The protruding portions 203A to 203D have a triangular-like outer shape and extend inward from the plate edges 2021 to 2024 in the direction of the central axis C. Taking the protruding portion 203D as an example, a bottom edge of the protruding portion 203D is a plate edge 2024 of the main carrier 202, and an arc angle 203D1 is located near the central axis C and opposite to the bottom edge or the edge 2024, but does not touch. To the central axis C. The first oblique side 203D2 and the second oblique side 203D3 of the protruding portion 203D are each spaced apart from a hypotenuse of the adjacent protruding portions 203C, 203A by a distance greater than zero. The protrusions 203A-203D collectively define a cross-shaped opening 204, and the position of the cross-shaped opening 204 is substantially located on the two diagonals A1, A2. The secondary carrier plates 201A to 201D are respectively located between the adjacent protrusions and extend substantially in the Z-axis direction. For example, the distance (H3) between the two adjacent protrusions 203B, 203C is greater than the width (H4) of the secondary carrier 201C; H3-H4 = 1 mm to 10 mm. The manufacturing process of the light-emitting component 200 is similar to that of the light-emitting component 100, that is, a trench is formed on the carrier 20 by cutting or stamping, thereby defining the secondary carrier boards 201A-201D, the main carrier board 202, and the protrusions 203A-203D. Outline and position. After the test equipment is used to perform a one-time test on all the light-emitting units on the carrier 20, the steps of bending the secondary carriers 201A to 201D are performed to form the light-emitting assembly 200. Therefore, in the bending step, it is advantageous to bend the secondary carrier plates 201A to 201D when H3 > H4. Further, the angle θ between the secondary carriers 201A to 201D and the main carrier 202 is 0° to 180°. In another embodiment, the angle θ between the secondary carrier plates 201A-201D and the main carrier plate 202 is 181°-345°; or, the inclination angle θ of a part of the secondary carrier plates is between 0° and 180°, and another part is The inclination angle θ of the carrier plate is between 181° and 345°. For the connection relationship between the secondary carrier boards 201A to 201D and the main carrier board 202, reference may be made to the description of the first embodiment in FIG. 1A, and details are not described herein again.

如第3圖所示,發光組件200中,複數個發光單元11位於次載板201A~201D上,複數個發光單元16位於主載板202上,且圍繞中心軸C排列。結合發光單元11與發光單元16在不同方向上的出光,發光組件200可達到近乎全周光的光型。同樣地,視發光單元16之光電特性與發光組件200光型的需求,發光單元16可做更緊密或是更鬆散的配置。次載板201A~201D與複數個發光單元11的尺寸以及排列方式類似發光組件100,因此,次載板201A~201D與位於其上的發光單元11可以視為一燈絲(filament)結構,且發光組件200可視為具有複數個燈絲的發光結構。As shown in FIG. 3, in the light-emitting assembly 200, a plurality of light-emitting units 11 are located on the secondary carrier boards 201A-201D, and a plurality of light-emitting units 16 are located on the main carrier board 202 and arranged around the central axis C. In combination with the light emission of the light-emitting unit 11 and the light-emitting unit 16 in different directions, the light-emitting assembly 200 can achieve an almost full-circumferential light pattern. Similarly, depending on the optoelectronic characteristics of the illumination unit 16 and the optical type of the illumination assembly 200, the illumination unit 16 can be configured in a tighter or looser configuration. The secondary carrier boards 201A-201D and the plurality of light-emitting units 11 are similar in size and arrangement to the light-emitting assembly 100. Therefore, the secondary carrier boards 201A-201D and the light-emitting unit 11 located thereon can be regarded as a filament structure and emit light. Assembly 200 can be viewed as a light emitting structure having a plurality of filaments.

於一實施例中,次載板201A~201D、主載板202、以及發光單元11、16可以視為固定於一光板上(主載板202以及發光單元16)的四根燈絲(次載板201A~201D以及發光單元11)。相較於使用四根獨立的燈絲與一光板製作發光組件200時,四根獨立的燈絲結構需要一一測試後,才能與光板進行組裝。然,利用本實施例之結構或製程可以一次性地測試所有燈絲後再彎折次載板201A~201D,如此,大幅簡化製作發光組件200的流程(減少測試步驟、縮短測試時間、以及組裝時間)。In one embodiment, the secondary carrier boards 201A-201D, the main carrier board 202, and the light-emitting units 11, 16 can be regarded as four filaments (secondary board) fixed on a light board (the main carrier board 202 and the light-emitting unit 16). 201A to 201D and light emitting unit 11). When the light-emitting assembly 200 is fabricated using four separate filaments and a light panel, the four separate filament structures need to be tested one by one before being assembled with the light panel. However, the structure or process of the embodiment can be used to test all the filaments at a time and then bend the secondary carrier plates 201A-201D, thus greatly simplifying the process of manufacturing the light-emitting assembly 200 (reducing test steps, shortening test time, and assembly time) ).

在另一實施例中,載板20具有一N邊形的形狀,且具有N個頂角(N為不小於3的正整數)。載板20具有N個自中心軸(通過形心且垂直於載板的虛擬線段)向頂角延伸之線段,使載板30被均分成N個似三角形的突出部,並共同定義出一自中心軸向外發射的輻射狀開孔,此開孔的位置實質上位於N個線段上。N個次載板係分別位於兩鄰近突出部之間,且大致上朝Z軸方向延伸。次載板與主載板之連接關係的詳細說明可以參閱前述相應段落,於此不再贅述。In another embodiment, the carrier 20 has an N-sided shape and has N apex angles (N is a positive integer not less than 3). The carrier 20 has N segments extending from the central axis (through the centroid and perpendicular to the virtual line segment of the carrier) to the apex angle, so that the carrier 30 is equally divided into N triangular-like protrusions, and a self-definition is defined. A radial opening that is axially outwardly emitted from the center, the position of the opening being substantially on the N line segments. The N secondary carrier plates are respectively located between the two adjacent projections and extend substantially in the Z-axis direction. For a detailed description of the connection relationship between the secondary carrier board and the main carrier board, refer to the corresponding paragraphs mentioned above, and details are not described herein again.

第4圖顯示本發明另一實施例中發光組件300之立體示意圖。發光組件包含一圓形載板30,複數個發光單元設置於載板30上、電極32A、32B分別為正負極設置於載板30上、及一導線結構(圖未示)用以電連接發光單元11、16。發光單元16與電極32A、32B位於載板30的同一側。另一實施例中,電極32A、32B與發光單元16位於載板30的相反側。載板30包含主載板302、以及四個次載板301A~301D。主載板302的外板邊具有一圓型的輪廓、一通過圓心並垂直於主載板302的中心軸C、以及四個自中心軸向外延伸的半徑B1~B4。兩相鄰半徑間的夾角為90度,並將主載板302的外板邊均分成四個板邊3021~3024。此外,主載板302具有四個突出部303A~303D,係具有似扇形形狀,分別從板邊3021~3024向內並往中心軸C方向延伸。突出部303A~303D共同定義一十字形開孔304,且十字形開孔304的位置實質上位於四個半徑B1~ B4上。Figure 4 is a perspective view showing a light-emitting assembly 300 in another embodiment of the present invention. The light-emitting component comprises a circular carrier 30, a plurality of light-emitting units are disposed on the carrier 30, electrodes 32A and 32B are respectively disposed on the carrier 30, and a wire structure (not shown) is used for electrically connecting the light. Units 11, 16. The light emitting unit 16 and the electrodes 32A, 32B are located on the same side of the carrier 30. In another embodiment, the electrodes 32A, 32B and the light emitting unit 16 are located on opposite sides of the carrier 30. The carrier 30 includes a main carrier 302 and four secondary carriers 301A to 301D. The outer plate side of the main carrier plate 302 has a circular profile, a central axis C passing through the center and perpendicular to the main carrier plate 302, and four radii B1 to B4 extending outward from the central axis. The angle between the two adjacent radii is 90 degrees, and the outer edge of the main carrier 302 is equally divided into four rims 3021 to 3024. Further, the main carrier 302 has four projecting portions 303A to 303D having a fan-like shape and extending inward from the plate sides 3021 to 3024 in the direction of the central axis C. The protrusions 303A-303D collectively define a cross-shaped opening 304, and the position of the cross-shaped opening 304 is substantially located on the four radii B1 to B4.

次載板301A~301D係分別位於兩鄰近突出部303A~303D之間且大致上朝Z軸延伸。舉例來說,兩鄰近突出部303A、303B間的距離(H5)大於次載板301A的寬度(H6);H5-H6=1mm~10mm。發光組件300之製作流程係先利用切割或沖壓方式於載板30上形成溝槽,藉此定義次載板301A~301D與主載板302。待利用測試設備對載板30上所有發光單元做一次性導通測試後,再進行彎折次載板301A~301D的步驟,以形成發光組件300。因此,在彎折步驟中,H5>H6的設計可利於彎折次載板201A~201D。此外,次載板301A~301D與主載板302之夾角θ為0° ~180°。在另一實施例中,為了照射載板30下方的位置,次載板301A~301D與主載板302之夾角θ可為181° ~345°;或者,一部分次載板的傾斜角θ介於 0 ~ 180度且另一部分次載板的傾斜角θ介於 181° ~345°。次載板301A~301D與主載板302的詳細連接關係參考前開第1A圖之描述,於此不在贅述。The secondary carrier plates 301A to 301D are respectively located between the adjacent protrusions 303A to 303D and extend substantially toward the Z axis. For example, the distance (H5) between the two adjacent protrusions 303A, 303B is greater than the width (H6) of the secondary carrier 301A; H5-H6 = 1 mm to 10 mm. The manufacturing process of the light-emitting assembly 300 first forms a groove on the carrier 30 by cutting or stamping, thereby defining the secondary carrier plates 301A-301D and the main carrier 302. After the one-time conduction test is performed on all the light-emitting units on the carrier 30 by using the test equipment, the steps of bending the secondary carrier plates 301A to 301D are performed to form the light-emitting assembly 300. Therefore, in the bending step, the design of H5>H6 can facilitate bending the secondary carrier plates 201A-201D. Further, the angle θ between the secondary carrier plates 301A to 301D and the main carrier 302 is 0° to 180°. In another embodiment, in order to illuminate the position below the carrier 30, the angle θ between the secondary carrier plates 301A-301D and the main carrier 302 may be 181°-345°; or, the inclination angle θ of a part of the secondary carrier is between The inclination angle θ of 0 to 180 degrees and the other sub-board is between 181° and 345°. The detailed connection relationship between the secondary carrier boards 301A to 301D and the main carrier board 302 is described with reference to the first embodiment of FIG. 1A, and details are not described herein.

如第4圖所示,發光組件300中,複數個發光單元11位於次載板301A~301D上,複數個發光單元16位於主載板302上,且圍繞中心軸C排列。結合發光單元11與發光單元16的出光方向,發光組件300可達到近乎全周光的光型。同樣地,視發光單元16之光電特性與發光組件300光型的需求,發光單元16可做更緊密或是更鬆散的配置。As shown in FIG. 4, in the light-emitting assembly 300, a plurality of light-emitting units 11 are located on the secondary carrier plates 301A to 301D, and a plurality of light-emitting units 16 are located on the main carrier 302 and arranged around the central axis C. In combination with the light-emitting direction of the light-emitting unit 11 and the light-emitting unit 16, the light-emitting assembly 300 can achieve an almost full-circumferential light pattern. Similarly, depending on the optoelectronic characteristics of the illumination unit 16 and the optical type of the illumination assembly 300, the illumination unit 16 can be configured in a tighter or looser configuration.

於一實施例中,次載板301A~301D、主載板302、以及發光單元11、16可以視為固定於一光板上(主載板302以及發光單元16)的四根燈絲(次載板301A~301D以及發光單元11)。相較於使用四根獨立的燈絲與一光板製作發光組300,四根獨立的燈絲需要一一測試後,才能與光板進行組裝。然,利用本實施例之結構或製程可以一次性的測試所有燈絲,再彎折次載板301A~301D,進而大幅簡化發光組件300的製作流程(減少測試步驟、縮短測試時間、以及組裝時間)。In one embodiment, the secondary carrier boards 301A-301D, the main carrier board 302, and the light-emitting units 11, 16 can be regarded as four filaments (secondary board) fixed on a light board (the main carrier board 302 and the light-emitting unit 16). 301A to 301D and light emitting unit 11). Compared to the use of four independent filaments and a light panel to create the illumination group 300, four independent filaments need to be tested one by one before being assembled with the light panel. However, all the filaments can be tested at one time by using the structure or process of the embodiment, and the secondary carrier plates 301A to 301D are bent, thereby greatly simplifying the manufacturing process of the light-emitting assembly 300 (reducing test steps, shortening test time, and assembly time). .

在另一實施例中,載板30可具有N個自中心軸C向載板30之外板邊延伸的半徑(N為不小於3的正整數),使載板30被均分成N個似扇形的突出部。N個自外板邊向中心軸延伸的突出部,共同定義出一自中心軸向外發射的輻射狀開孔,此開孔的位置實質上位於該些N個半徑上。N個次載板係分別位於兩鄰近突出部之間,且大致上朝Z軸方向延伸。In another embodiment, the carrier 30 may have N radii extending from the central axis C toward the outer edge of the carrier 30 (N is a positive integer not less than 3), so that the carrier 30 is equally divided into N Scalloped protrusion. N protrusions extending from the outer plate edge toward the central axis collectively define a radial opening that is emitted from the central axial direction, and the position of the opening is substantially located on the N radii. The N secondary carrier plates are respectively located between the two adjacent projections and extend substantially in the Z-axis direction.

第5圖顯示發光裝置1000之立體示意圖。在此實施例中將以發光組件100為例,但其目的並非用以限制本發明之範圍,其他發光組件200、發光組件300等亦可應用於發光裝置1000中。如第5圖所示,發光裝置1000包含一燈罩1003、一承載板1001、及一散熱件1002。發光組件100設置於承載板1001上,並被燈罩1003包覆。承載板1001可以金屬材料、陶瓷材料或是導熱塑膠。發光組件100係藉由焊料、導電黏著劑、卡扣、或螺絲固接於承載板1001上,使發光組件100上的發光單元所產生的熱可以透過承載板1001傳導至散熱件1002。散熱件1002之材料包含金屬、導熱塑膠、或陶瓷。散熱件1002與承載板1001接合的方式,可以藉由卡榫、黏著、焊接、螺絲固定、或是採用模塑方式(molding)。散熱件1002內部具有一空腔(圖未示)。一電控元件(圖未示)設置於空腔內且電連接發光組件100以及外部電路(圖未示)。在一實施例中,電控元件與發光單元可於同一步驟中(例如:第2B圖)設置於主載板與次載板上。Fig. 5 is a perspective view showing the light emitting device 1000. In this embodiment, the light-emitting component 100 is taken as an example, but the purpose thereof is not to limit the scope of the present invention, and other light-emitting components 200, light-emitting components 300, and the like can also be applied to the light-emitting device 1000. As shown in FIG. 5, the light-emitting device 1000 includes a lamp cover 1003, a carrier plate 1001, and a heat sink 1002. The light emitting assembly 100 is disposed on the carrier board 1001 and covered by the lamp cover 1003. The carrier plate 1001 may be a metal material, a ceramic material or a heat conductive plastic. The light-emitting component 100 is fixed to the carrier 1001 by solder, a conductive adhesive, a buckle, or a screw, so that heat generated by the light-emitting unit on the light-emitting component 100 can be transmitted to the heat sink 1002 through the carrier 1001. The material of the heat sink 1002 comprises metal, thermally conductive plastic, or ceramic. The manner in which the heat sink 1002 is engaged with the carrier plate 1001 can be by clamping, adhering, soldering, screwing, or molding. The heat sink 1002 has a cavity (not shown) inside. An electronic control component (not shown) is disposed in the cavity and electrically connects the light emitting component 100 and an external circuit (not shown). In an embodiment, the electronic control unit and the light emitting unit can be disposed on the main carrier board and the secondary carrier board in the same step (for example, FIG. 2B).

燈罩1003之形狀可為球狀、管狀或蠟燭狀。燈罩1003的形狀可參考美國國家標準協會(American National Standard Institute, ANSI)之標準,例如A系列(A series)、B系列(B series)、S系列(S series)、F系列(F series)和G系列(G series)。燈罩1003可由透明、半透明之透光材質所組成。於燈罩1003內可填充空氣、透明材料或上述二者之組合。在燈罩1003的內表面也可以選擇性的包含一薄膜(未顯示),薄膜包含波長轉換材料、擴散粒子、或其組合。波長轉換材料用於將發光組件100所發出的光進行波長轉換,例如發光組件100發出藍光,經過波長轉換材料將光轉為黃光,藍光與黃光混合後即產生白光。擴散粒子係用於散射藍光、黃光、白光或/且其他發光組件100所產生之光線。The shape of the lamp cover 1003 may be spherical, tubular or candle-shaped. The shape of the lampshade 1003 can be referred to the American National Standards Institute (ANSI) standards, such as A series, B series, S series, F series, and G series (G series). The lamp cover 1003 can be composed of a transparent, translucent transparent material. The lamp cover 1003 may be filled with air, a transparent material, or a combination of the two. Optionally, a film (not shown) may be included on the inner surface of the globe 1003, the film comprising a wavelength converting material, diffusing particles, or a combination thereof. The wavelength converting material is used for wavelength conversion of the light emitted by the light emitting component 100. For example, the light emitting component 100 emits blue light, and the light is converted into yellow light by the wavelength converting material, and the white light is generated when the blue light and the yellow light are mixed. The diffusing particles are used to scatter light generated by blue, yellow, white, or/and other light-emitting components 100.

第6A圖顯示本發明另一實施例中發光組件400之立體示意圖。發光組件400,包含一圓形載板40,複數個發光單元11設置於載板40上。圓形載板40包含一主載板402、複數個第一型次載板401、以及複數個第二型次載板403。複數個發光單元11分佈於第一型次載板401上。主載板402具有一圓形的外板邊4022以及一似圓形的內板邊4021,因此主載板402大致上呈現一環形形狀。其中,外板邊4022與內板邊4021具有相同的圓心。第一型次載板401與第二型次載板403自內板邊4021大體上朝Z軸方向延伸,且彼此間隔排列。第一型次載板401與主載板402之夾角θ為90o ~180o。第二型次載板403與主載板402之夾角θ1為90° ~180°。θ與θ1可以相同或是不相同。第一型次載板401具有一寬度W1、以及一長度L1。第二型次載板403具有一近似梯形的外型,具有一上底寬W2、以及一斜邊長L2。第二型次載板403的上底寬W2與斜邊長L2可以與第一型次載板401的寬度W1與長度L1相同或不相同。不同之第一型次載板401的W1與L1可以相同或是不同,不同之第二型次載板403的W2與L2也可以相同或是不同。第一型次載板401的數量與第二型次載板403的數量也可以相同或是不同。在本實施例中,發光組件400具有四個第一型次載板401,四個第二型次載板403,W2>W1,L2< L1,且所有第一型次載板401的寬度W1與長度L1皆相同,所有第二型次載板403的寬度W2與長度L2皆相同。FIG. 6A is a perspective view showing a light-emitting assembly 400 according to another embodiment of the present invention. The light-emitting assembly 400 includes a circular carrier 40, and a plurality of light-emitting units 11 are disposed on the carrier 40. The circular carrier 40 includes a main carrier 402, a plurality of first-type secondary carriers 401, and a plurality of second-type secondary carriers 403. A plurality of light emitting units 11 are distributed on the first type of secondary carrier 401. The main carrier plate 402 has a circular outer plate edge 4022 and a circular inner plate edge 4021, so that the main carrier plate 402 generally assumes a ring shape. The outer plate edge 4022 and the inner plate edge 4021 have the same center. The first type of secondary carrier 401 and the second type of secondary carrier 403 extend substantially in the Z-axis direction from the inner plate edge 4021 and are spaced apart from each other. The angle θ between the first type of secondary carrier 401 and the main carrier 402 is 90o to 180o. The angle θ1 between the second type secondary carrier 403 and the main carrier 402 is 90° to 180°. θ and θ1 may be the same or different. The first type of secondary carrier 401 has a width W1 and a length L1. The second type secondary carrier plate 403 has an approximately trapezoidal shape with an upper base width W2 and a bevel length L2. The upper base width W2 and the oblique side length L2 of the second type secondary carrier plate 403 may be the same as or different from the width W1 and the length L1 of the first type secondary carrier plate 401. Different W1 and L1 of the first type of secondary carrier 401 may be the same or different, and different W2 and L2 of the second type secondary carrier 403 may be the same or different. The number of first type secondary boards 401 and the number of second type secondary boards 403 may also be the same or different. In this embodiment, the light-emitting assembly 400 has four first-type secondary carrier plates 401, four second-type secondary carrier plates 403, W2>W1, L2< L1, and width W1 of all first-type secondary carrier plates 401. Same as the length L1, the width W2 and the length L2 of all the second type of secondary carrier plates 403 are the same.

如第6A圖顯示,複數個發光單元11位於第一型次載板401上,第二型次載板403以及主載板402上並無配置發光單元。主載板402上可選擇性的設置發光單元(未顯示),增加發光組件400在正Z方向上的亮度。As shown in FIG. 6A, a plurality of light-emitting units 11 are located on the first-type secondary carrier 401, and no light-emitting units are disposed on the second-type secondary carrier 403 and the main carrier 402. A light emitting unit (not shown) is selectively disposed on the main carrier 402 to increase the brightness of the light emitting assembly 400 in the positive Z direction.

第6B圖顯示發光組件400設置於一承載板1001'之示意圖。承載板1001'係例如第5圖中之承載板1001,但其中心具有一突出部10011,例如一平截頭體(frustum)、角錐、角柱、或圓柱體。若突出部10011下方或內部具有一個容置空間,則可容置一電控元件(圖未示)。電控元件電連接發光組件400以及外部電路。由於此額外的容置空間可以收納全部或部分的電控元件,位於承載板1001'下方之散熱件1002(參考第5圖之1002)的體積可縮小。因此,發光裝置(如第五圖所示)在維持相同的高度下,可以增加燈罩1003的高度,降低散熱件1002的高度,亦即可以提高燈罩1003與散熱件1002的高度比。由於燈罩1003的體積變大,更靠近燈座,出光表面積也增大,側向及向下的出光量(負Z方向)也可以增加FIG. 6B shows a schematic view of the light-emitting assembly 400 disposed on a carrier plate 1001'. The carrier plate 1001' is, for example, the carrier plate 1001 in Fig. 5, but has a projection 10011 at its center, such as a frustum, a pyramid, a corner post, or a cylinder. If there is an accommodating space under or inside the protruding portion 10011, an electronic control component (not shown) can be accommodated. The electronic control unit electrically connects the light emitting assembly 400 with an external circuit. Since this additional accommodating space can accommodate all or part of the electronic control components, the volume of the heat sink 1002 (refer to 1002 of FIG. 5) under the carrier board 1001' can be reduced. Therefore, the light-emitting device (as shown in FIG. 5) can increase the height of the lamp cover 1003 and reduce the height of the heat sink 1002 while maintaining the same height, that is, the height ratio of the lamp cover 1003 to the heat sink 1002 can be increased. Since the volume of the lamp cover 1003 becomes larger and closer to the lamp holder, the light-emitting surface area also increases, and the amount of light emitted laterally and downwardly (negative Z direction) can also be increased.

如第6B圖所示,第二型次載板403與突出部10011的側表面10012完全貼合,用以增加發光組件400的散熱效率。在一實施例中,承載板1001'為金屬材料,為防止第一型次載板401上的發光單元11發生短路,可使第一型次載板401不與突出部10011的側表面10012 (意即θ<θ1)接觸。或者,形成一絕緣層材料於第一型次載板401與突出部10011之側表面10012間(絕緣層材料形成於第一型次載板401或/且側表面10012),因此第一型次載板401及第二型次載板403可與突出部10011的側表面10012相接觸(意即θ=θ1)。又,可不配置導線結構於第一型次載板401面向突出部10011的一側,而將導線結構配置在第一型次載板401用以放置發光單元11之側或第一型次載板401之內。As shown in FIG. 6B, the second type of secondary carrier 403 is completely adhered to the side surface 10012 of the protruding portion 10011 for increasing the heat dissipation efficiency of the light emitting assembly 400. In one embodiment, the carrier plate 1001' is made of a metal material. To prevent short-circuiting of the light-emitting unit 11 on the first-type secondary carrier 401, the first-type secondary carrier 401 may not be associated with the side surface 10012 of the protruding portion 10011 ( That is, θ < θ1) contact. Alternatively, an insulating layer material is formed between the first type of secondary carrier 401 and the side surface 10012 of the protruding portion 10011 (the insulating layer material is formed on the first type of secondary carrier 401 or/and the side surface 10012), and thus the first type The carrier 401 and the second type secondary carrier 403 may be in contact with the side surface 10012 of the protrusion 10011 (ie, θ = θ1). Moreover, the wire structure may be disposed on a side of the first type secondary board 401 facing the protruding portion 10011, and the wire structure may be disposed on the side of the first type secondary board 401 for placing the light emitting unit 11 or the first type secondary board. Within 401.

第7A圖以及第7B圖顯示依據本發明另一實施例之發光組件500之示意圖。第7A圖顯示未折彎前的發光組件500之上視圖。第7B圖顯示折彎後發光組件500之立體示意圖。如第7A圖以及第7B圖所示,發光組件500包含一圓形載板50,四個發光結構503A~503D、及一導線結構(圖未示)。每一發光結構503A~503D包含一載板5031A~5031D以及複數個發光單元11設置於載板5031A~5031D上。如第7A圖所示,未折彎前的圓形載板50具有四個彼此不互相連通的溝槽17,定義出一主載板502以及四個次載板501A~501D。主載板502的外板邊具有一圓型的形狀,並定義一垂直於主載板502的中心軸C以及兩個穿過中心軸的直徑 C1、C2。C1以及C2彼此間的夾角為90度。溝槽17以直徑C1或C2為對稱軸呈現ㄇ字形,藉此,所定義出的次載板501A~501D實質上位於直徑C1以及C2上。如第7B圖所示,折彎次載板501A~501D,使次載板501A~501D大體上自主載板502的外板邊朝Z軸方向偏轉,且與主載板502間具有一傾斜角θ為0° ~180°。7A and 7B show schematic views of a light emitting assembly 500 in accordance with another embodiment of the present invention. Figure 7A shows a top view of the light-emitting assembly 500 before being bent. FIG. 7B is a perspective view showing the light-emitting assembly 500 after bending. As shown in FIGS. 7A and 7B, the light-emitting assembly 500 includes a circular carrier 50, four light-emitting structures 503A-503D, and a wire structure (not shown). Each of the light-emitting structures 503A to 503D includes a carrier 5031A to 5031D and a plurality of light-emitting units 11 are disposed on the carrier boards 5031A to 5031D. As shown in Fig. 7A, the circular carrier 50 before unfolding has four grooves 17 which are not in communication with each other, defining a main carrier 502 and four secondary carriers 501A to 501D. The outer plate side of the main carrier plate 502 has a circular shape and defines a central axis C perpendicular to the main carrier plate 502 and two diameters C1, C2 passing through the central axis. The angle between C1 and C2 is 90 degrees with each other. The groove 17 has a U-shape with a diameter C1 or C2 as an axis of symmetry, whereby the defined sub-carriers 501A to 501D are substantially located on the diameters C1 and C2. As shown in FIG. 7B, the secondary carrier plates 501A to 501D are bent so that the outer carrier sides of the secondary carrier plates 501A to 501D are substantially deflected in the Z-axis direction and have an inclination angle with the main carrier plate 502. θ is 0° to 180°.

如第7A圖以及第7B圖所示,載板5031A~5031D具有一大致上與次載板501A~501D大致上相同的寬度,且一端與次載板501A~501D相連接。位於載板5031A~5031D上的發光單元11可電連接至位於載板50上的導線結構(圖未示)。發光結構503A~503D藉由焊料、導電黏著劑、卡扣、或是螺絲固接於次載板501A~501D上。換言之,載板5031A~5031D與載板50為兩個獨立的結構。發光組件500如同發光組件100、200、300,可置於如第5圖之發光裝置1000之中。As shown in FIGS. 7A and 7B, the carrier plates 5031A to 5031D have substantially the same width as the secondary carrier plates 501A to 501D, and one end is connected to the secondary carrier plates 501A to 501D. The light emitting unit 11 on the carrier boards 5031A to 5031D can be electrically connected to a wire structure (not shown) on the carrier board 50. The light-emitting structures 503A to 503D are fixed to the secondary carrier plates 501A to 501D by solder, a conductive adhesive, a snap, or a screw. In other words, the carrier plates 5031A to 5031D and the carrier 50 have two independent structures. The light-emitting assembly 500, like the light-emitting assembly 100, 200, 300, can be placed in the light-emitting device 1000 as in FIG.

第8圖顯示發光單元11之剖面示意圖。發光單元16與發光單元11類似,在此僅就發光單元11做詳細說明。發光單元11包含一發光主體111、一第一透明體112、一光學轉換結構113、一第二透明體114、一第三透明體115、以及一光學層119。發光主體111包含一第一型半導體層、一活性層、一第二型半導體層(圖未示)以及兩電極120A、120B。當發光主體111為一異質結構時,第一型半導體層及第二型半導體層,例如為包覆層(cladding layer)及/或限制層(confinement layer),可分別提供電子、電洞,使電子、電洞於活性層中結合以發光。第一型半導體層、活性層、及第二型半導體層可包含Ⅲ-Ⅴ族半導體材料,例如Al xIn yGa 1-x-y N或Al xIn yGa 1-x-y P,其中0≦x,y≦1;(x+y)≦1。依據活性層之材料,發光主體111可發出一峰值(Peak wavelength)或主波長 (dominant wavelength)介於610 nm及650 nm之間的紅光、峰值或主波長介於530 nm及570 nm之間的綠光、或是峰值介於450 nm及490 nm之間的藍光。發光單元11更包含一反射絕緣層116A、116B形成於第一透明體112、一光學轉換結構113及第二透明體114下方且未覆蓋發光主體111之兩電極120A、120B;及延伸電極117A、117B係分別形成於兩電極120A、120B上並與兩電極120A、120B電連接。第一透明體112、第二透明體114及第三透明體115對於光為透明,像是太陽光或發光主體111所發出的光。在一實施例中,第一透明體112、第二透明體114或/及第三透明體115可包含擴散粒子,例如:二氧化鈦、氧化鋯、氧化鋅或氧化鋁。 Fig. 8 is a schematic cross-sectional view showing the light-emitting unit 11. The light-emitting unit 16 is similar to the light-emitting unit 11, and only the light-emitting unit 11 will be described in detail herein. The light emitting unit 11 includes a light emitting body 111, a first transparent body 112, an optical conversion structure 113, a second transparent body 114, a third transparent body 115, and an optical layer 119. The light emitting body 111 includes a first type semiconductor layer, an active layer, a second type semiconductor layer (not shown), and two electrodes 120A, 120B. When the illuminating body 111 is a heterostructure, the first type semiconductor layer and the second type semiconductor layer, for example, a cladding layer and/or a confinement layer, respectively provide electrons and holes, so that Electrons and holes are combined in the active layer to emit light. The first type semiconductor layer, the active layer, and the second type semiconductor layer may comprise a III-V semiconductor material such as Al x In y Ga ( 1-xy ) N or Al x In y Ga ( 1-xy ) P, wherein 0≦x, y≦1; (x+y)≦1. Depending on the material of the active layer, the illuminating body 111 can emit a peak (Peak wavelength) or a dominant wavelength between 610 nm and 650 nm, with a peak or dominant wavelength between 530 nm and 570 nm. Green light, or blue light with a peak between 450 nm and 490 nm. The light emitting unit 11 further includes a reflective insulating layer 116A, 116B formed under the first transparent body 112, an optical conversion structure 113 and the second transparent body 114 and not covering the two electrodes 120A, 120B of the light emitting body 111; and the extension electrode 117A, 117B is formed on the two electrodes 120A and 120B, respectively, and is electrically connected to the two electrodes 120A and 120B. The first transparent body 112, the second transparent body 114, and the third transparent body 115 are transparent to light, such as sunlight or light emitted from the light-emitting body 111. In an embodiment, the first transparent body 112, the second transparent body 114, or/and the third transparent body 115 may comprise diffusion particles such as titanium dioxide, zirconium oxide, zinc oxide or aluminum oxide.

在一實施例中,光學轉換結構113包含複數個螢光粉顆粒(圖未示)並順應第一透明體112之輪廓形成。部分相鄰的螢光粉顆粒彼此接觸,然部分相鄰的螢光粉顆粒彼此未接觸。螢光粉顆粒具有約5 um~100 um的顆粒尺寸(直徑)且可包含一種或兩種以上種類之螢光粉材料。螢光粉材料包含但不限於黃綠色螢光粉及紅色螢光粉。黃綠色螢光粉之成分係例如鋁氧化物(YAG或是TAG)、矽酸鹽、釩酸鹽、鹼土金屬硒化物、或金屬氮化物。紅色螢光粉之成分係例如氟化物(K 2TiF 6:Mn 4+、K 2SiF 6:Mn 4+)、矽酸鹽、釩酸鹽、鹼土金屬硫化物、金屬氮氧化物、或鎢鉬酸鹽族混合物。光學轉換結構113可吸收發光主體111所發出的第一光並轉換成與第一光不同頻譜之第二光。第一光與第二光混和會產生一混合光,例如白光。在此實施例中,發光單元11於熱穩態下產生的光具有一白光色溫為2200K~6500K(例如:2200K、2400K、2700K、3000K、5700K、6500K),其色點值(CIE x, y)會落於七個麥克亞當橢圓(MacAdam ellipse)之範圍,並具有一大於80或大於90之演色性(CRI)。在另一實施例,第一光與第二光混合可產生紫光、黃光或其他非白光的色光。 In one embodiment, the optical conversion structure 113 includes a plurality of phosphor particles (not shown) and conforms to the contour of the first transparent body 112. Partially adjacent phosphor particles are in contact with each other, but partially adjacent phosphor particles are not in contact with each other. The phosphor particles have a particle size (diameter) of about 5 um to 100 um and may contain one or more types of phosphor materials. Fluorescent powder materials include, but are not limited to, yellow-green phosphor powder and red phosphor powder. The components of the yellow-green phosphor are, for example, aluminum oxide (YAG or TAG), citrate, vanadate, alkaline earth metal selenide, or metal nitride. The components of the red phosphor are, for example, fluoride (K 2 TiF 6 : Mn 4+ , K 2 SiF 6 : Mn 4+ ), citrate, vanadate, alkaline earth metal sulfide, metal oxynitride, or tungsten. a mixture of molybdate groups. The optical conversion structure 113 can absorb the first light emitted by the light-emitting body 111 and convert it into a second light of a different spectrum from the first light. Mixing the first light with the second light produces a mixed light, such as white light. In this embodiment, the light generated by the light-emitting unit 11 in the thermal steady state has a white light color temperature of 2200K~6500K (for example: 2200K, 2400K, 2700K, 3000K, 5700K, 6500K), and its color point value (CIE x, y) ) will fall within the range of seven MacAdam ellipse and have a color rendering (CRI) greater than 80 or greater than 90. In another embodiment, the first light is mixed with the second light to produce violet, yellow, or other non-white light.

第一透明體112及第二透明體114分別包含矽膠(Silicone)、環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、SU8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、氧化鋁(Al 2O 3)、SINR、或旋塗玻璃(SOG)。第三透明體115包含藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、環氧樹脂(Epoxy)、石英(quartz)、丙烯酸樹脂(Acrylic Resin)、氧化矽(SiO X)、氧化鋁(Al 2O 3)、氧化鋅(ZnO)、或矽膠(Silicone)。反射絕緣層116包含一基質及高反射率物質之混和物。基質可為矽膠基質(silicone-based)或環氧基質(epoxy-based);高反射率物質可包含二氧化鈦、二氧化矽或氧化鋁。此外,反射絕緣層126可具有反射光或擴散光之作用。延伸電極117A、117B包含金屬,例如:銅、鈦、金、鎳、或及其組合。 The first transparent body 112 and the second transparent body 114 respectively comprise Silicone, Epoxy, Polyimidine (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB). , SU8, Acrylic Resin, Polymethyl Methacrylate (PMMA), Polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide, Fluorocarbon Fluorocarbon Polymer, alumina (Al 2 O 3 ), SINR, or spin-on glass (SOG). The third transparent body 115 comprises Sapphire, Diamond, Glass, Epoxy, quartz, Acrylic Resin, SiO x , alumina ( Al 2 O 3 ), zinc oxide (ZnO), or silicone (Silicone). The reflective insulating layer 116 comprises a mixture of a substrate and a high reflectivity material. The substrate can be a silicone-based or epoxy-based; the high reflectivity material can comprise titanium dioxide, ceria or alumina. Further, the reflective insulating layer 126 may have a function of reflecting light or diffusing light. The extension electrodes 117A, 117B comprise a metal such as copper, titanium, gold, nickel, or combinations thereof.

如第8圖所示,第三透明體115形成於第二透明體114之上方,具有一上寬下窄的形狀,詳言之,第三透明體115具有一第一部份1151、及一第二部分1152。第二部分1152較靠近第二透明體114且其寬度小於第一部份1151之寬度。第一部分1151的厚度約為第三透明體115厚度的1%~20%或是1%~10%。在本實施例中,第一部分1151與第二部分1152之相接處為一弧形。第一部分1151具有一側表面1151S較第二透明體114之側表面1142遠離發光主體111。選擇性地,側表面1151S也可大致上與側表面1142齊平。位於延伸電極117A、117B之間的反射絕緣層116B下表面具有一隆起的弧狀結構,其隆起的最大厚度比電極120A、120B厚。位於電極120A、120B兩側的反射絕緣層116A亦具有弧狀的下表面,且其厚度從電極120A、120B向發光單元11的外側方向漸漸變厚,最終反射絕緣層116A的外側表面與第二透明體的側表面1142共平面。部分的反射絕緣層116A之下表面被延伸電極117A、117B所覆蓋並相接觸,另一部分遠離發光主體111的下表面並未被延伸電極117A、117所覆蓋。As shown in FIG. 8 , the third transparent body 115 is formed above the second transparent body 114 and has a shape of an upper width and a lower width. In detail, the third transparent body 115 has a first portion 1151 and a first transparent body 115 . The second part 1152. The second portion 1152 is closer to the second transparent body 114 and has a width smaller than the width of the first portion 1151. The thickness of the first portion 1151 is about 1% to 20% or 1% to 10% of the thickness of the third transparent body 115. In this embodiment, the junction of the first portion 1151 and the second portion 1152 is an arc. The first portion 1151 has a side surface 1151S that is away from the light emitting body 111 than the side surface 1142 of the second transparent body 114. Alternatively, the side surface 1151S can also be substantially flush with the side surface 1142. The lower surface of the reflective insulating layer 116B between the extension electrodes 117A, 117B has a raised arc-like structure whose maximum thickness is thicker than the electrodes 120A, 120B. The reflective insulating layer 116A located on both sides of the electrodes 120A, 120B also has an arcuate lower surface, and its thickness gradually increases from the electrodes 120A, 120B toward the outer side of the light emitting unit 11, and the outer surface of the final reflective insulating layer 116A and the second The side surfaces 1142 of the transparent body are coplanar. The lower surface of the portion of the reflective insulating layer 116A is covered by the extending electrodes 117A, 117B and is in contact with each other, and the other portion is away from the lower surface of the light emitting body 111 without being covered by the extending electrodes 117A, 117.

如第8圖顯示,光學層119形成於第三透明體115與第二透明體114之間。光學層119可以是單層或者多層結構,單層結構例如為一金屬層,包含例如銀或鋁,或是一氧化物層,包含例如二氧化鈦。多層結構可以是金屬與金屬氧化物的疊層或是分散式布拉格反射鏡(Distributed Bragg reflector、DBR)以達到反射的效果。金屬與金屬氧化物的疊層例如鋁與氧化鋁的疊層。分散式布拉格反射鏡可為非半導體疊層或半導體疊層。非半導體疊層之材料可選自下列群組之一:氧化鋁(Al2O3)、氧化矽(SiO 2)、二氧化鈦(TiO 2)、五氧化二鈮(Nb 2O 5)、氮化矽(SiN x)。半導體疊層之材料可選自下列群組之一:氮化鎵(GaN)、氮化鋁鎵(AlGaN)、氮化铝铟镓(AlInGaN)、砷化鋁(AlAs)、砷化鋁鎵(AlGaAs)、砷化鎵(GaAs)。在本實施例中,不論是單層結構或者多層結構,都不會完全反射光線,因此至少有部分的光線會直接穿過反射結構129。 As shown in FIG. 8, the optical layer 119 is formed between the third transparent body 115 and the second transparent body 114. The optical layer 119 may be a single layer or a multilayer structure, such as a metal layer comprising, for example, silver or aluminum, or an oxide layer comprising, for example, titanium dioxide. The multilayer structure may be a laminate of metal and metal oxide or a distributed Bragg reflector (DBR) to achieve reflection. A laminate of a metal and a metal oxide such as a laminate of aluminum and aluminum oxide. The decentralized Bragg mirrors can be non-semiconductor laminates or semiconductor stacks. The material of the non-semiconductor laminate may be selected from one of the group consisting of alumina (Al 2 O 3 ), yttrium oxide (SiO 2 ), titania (TiO 2 ), niobium pentoxide (Nb 2 O 5 ), tantalum nitride (SiN). x ). The material of the semiconductor stack can be selected from one of the following groups: gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), aluminum arsenide (AlAs), aluminum gallium arsenide ( AlGaAs), gallium arsenide (GaAs). In this embodiment, the light is not completely reflected, whether it is a single layer structure or a multilayer structure, so that at least part of the light passes directly through the reflection structure 129.

在一實施例中,光學層119係由非半導體材料組成(例如SiO 2、TiO 2等氧化物)之分散式布拉格反射鏡,具有如第9A~9B圖所示的光學特性。光學層119對於波長在420~750nm的光線,具有接近100%的反射率,可以反射發光主體111發出的光,包含紅光、黃光、藍光以及綠光。光學層119對於波長在350~420nm以及大於750nm的光線則具有低於50~10%或低於10%的反射率。如第9A圖所示,光學層119可進一步包含第一光學層1191與第二光學層1192。第一光學層1191與第二光學層1192具有不同的疊層數以及/或不同疊層的厚度。第一光學層1191在420~600nm之間,而第二光學層1192在550~750nm之間均具有接近100%的反射率。藉由兩個光學層的組合可以提供相當於第9A圖的反射效果。在第9B圖中,光學層119由第一光學層1191、第二光學層1192與第三光學層1193組成,三個光學層各自具有不同的光學特性,堆疊後在420~750nm之間具有接近100%的反射率。第9A~9B圖為根據本發明實施例的光學層119之光學特性示意圖,其中第一光學層1191、第二光學層1192與第三光學層1193的厚度不同。在其他實施例中,上述的三個光學層的厚度相同。在其他實施例中,光學層119可以是由三層以上厚度相同或者不同的材料層所組成。光學層119所包含的複數個材料層各自具有不同的光學特性,並且可以在同樣的波長範圍內提供類似的反射率,例如第9A圖中,第一光學層1191與第二光學層1192在550~600nm之間都具有接近100%的反射率。在其他實施例中,光學層119更可以在380~980nm之間具有接近100%反射率。在其他實施例中,光學層119對於波長範圍為450 nm~475 nm之間的光線具有大於85%的反射率;對於波長範圍介於400 nm~600 nm的光線具有大於80%的反射率。未被光學層119反射的光線可以進入第三透明體115,並由第三透明體115的上方或側面離開發光單元11。 In one embodiment, the optical layer 119 is a dispersed Bragg mirror composed of a non-semiconductor material (e.g., an oxide such as SiO 2 or TiO 2 ) having optical characteristics as shown in Figs. 9A to 9B. The optical layer 119 has a reflectance close to 100% for light having a wavelength of 420 to 750 nm, and can reflect light emitted from the light-emitting body 111, including red light, yellow light, blue light, and green light. The optical layer 119 has a reflectance of less than 50 to 10% or less for light having a wavelength of 350 to 420 nm and more than 750 nm. As shown in FIG. 9A, the optical layer 119 may further include a first optical layer 1191 and a second optical layer 1192. The first optical layer 1191 and the second optical layer 1192 have different numbers of laminations and/or thicknesses of different laminations. The first optical layer 1191 is between 420 and 600 nm, and the second optical layer 1192 has a reflectivity of approximately 100% between 550 and 750 nm. A reflection effect equivalent to that of Fig. 9A can be provided by a combination of two optical layers. In FIG. 9B, the optical layer 119 is composed of a first optical layer 1191, a second optical layer 1192, and a third optical layer 1193. Each of the three optical layers has different optical characteristics, and is close to 420 to 750 nm after stacking. 100% reflectivity. 9A-9B are schematic diagrams showing the optical characteristics of the optical layer 119 according to an embodiment of the present invention, wherein the thickness of the first optical layer 1191, the second optical layer 1192, and the third optical layer 1193 are different. In other embodiments, the three optical layers described above are the same thickness. In other embodiments, the optical layer 119 can be composed of three or more layers of material having the same or different thicknesses. The plurality of material layers included in the optical layer 119 each have different optical characteristics, and can provide similar reflectance in the same wavelength range. For example, in FIG. 9A, the first optical layer 1191 and the second optical layer 1192 are at 550. Between ~600nm has a reflectivity close to 100%. In other embodiments, the optical layer 119 may have a near 100% reflectivity between 380 and 980 nm. In other embodiments, optical layer 119 has a reflectivity greater than 85% for light having a wavelength in the range of 450 nm to 475 nm and greater than 80% for light having a wavelength range of 400 nm to 600 nm. Light that is not reflected by the optical layer 119 may enter the third transparent body 115 and exit the light emitting unit 11 from above or from the side of the third transparent body 115.

如第8圖所示,光學層119實質上覆蓋整個發光單元11的橫截面,亦即光學層119覆蓋發光主體111與反射絕緣層116。發光主體111發出的光線在經過第三透明體115之前必然經過光學層119。而被光學層119反射的部份,有一部分會經過側表面1142直接離開發光單元,有一部分則會先經過反射絕緣層116A反射,再由側表面1142離開發光單元11。因此,對發光單元11而言,可於水平方向上獲得較多的光強度。As shown in FIG. 8, the optical layer 119 substantially covers the cross section of the entire light emitting unit 11, that is, the optical layer 119 covers the light emitting body 111 and the reflective insulating layer 116. The light emitted by the illuminating body 111 necessarily passes through the optical layer 119 before passing through the third transparent body 115. A portion of the portion that is reflected by the optical layer 119 exits the light-emitting unit directly through the side surface 1142, and a portion thereof is first reflected by the reflective insulating layer 116A, and then exits the light-emitting unit 11 by the side surface 1142. Therefore, for the light emitting unit 11, more light intensity can be obtained in the horizontal direction.

第10圖顯示依據本發明之另一實施例之發光單元11之剖面圖(發光單元11的輪廓由上視圖觀之可以是正方形、長方形、菱形、三角形或其他多邊形)。發光單元11包含一發光主體111。兩個電極120A、120B位於發光主體111之下表面1111(下表面1111可以是一個平面或數個平面/曲面的組合),兩個電極120A、120B的側表面1201不超過發光主體111的側表面1112。一光學轉換結構113覆蓋於發光主體111之上表面1113、側表面1112、以及兩個電極的側表面1201。光學轉換結構113亦填入兩個電極120A、120B之間。兩個電極120A、120B的下表面1202係未被光學轉換結構113所覆蓋且用以電連接到外部電路。光學轉換結構113之下表面1131大體上與電極120A、120B之下表面1202共平面(例如,下表面1202與下表面1131之落差不大於1/2或1/3的電極高度)。發光單元11可以為一六面發光之發光體且具有一約140度之發光角度。在此所描述之發光角度定義為當亮度為最大亮度之50%時所包含的角度範圍即為發光角度。發光角度之詳細描述可參考台灣申請案104103105之內容。Figure 10 is a cross-sectional view showing a light-emitting unit 11 according to another embodiment of the present invention (the outline of the light-emitting unit 11 may be a square, a rectangle, a diamond, a triangle or other polygon as viewed from a top view). The light emitting unit 11 includes a light emitting body 111. The two electrodes 120A, 120B are located on the lower surface 1111 of the light-emitting body 111 (the lower surface 1111 may be a plane or a combination of a plurality of planes/curves), and the side surfaces 1201 of the two electrodes 120A, 120B do not exceed the side surface of the light-emitting body 111 1112. An optical conversion structure 113 covers the upper surface 1113 of the light-emitting body 111, the side surface 1112, and the side surfaces 1201 of the two electrodes. The optical conversion structure 113 is also filled between the two electrodes 120A, 120B. The lower surface 1202 of the two electrodes 120A, 120B is not covered by the optical conversion structure 113 and is used to electrically connect to an external circuit. The lower surface 1131 of the optical conversion structure 113 is substantially coplanar with the lower surface 1202 of the electrodes 120A, 120B (for example, the difference between the lower surface 1202 and the lower surface 1131 is not more than 1/2 or 1/3 of the electrode height). The light emitting unit 11 can be a six-sided light emitting body and has an illumination angle of about 140 degrees. The angle of illumination described herein is defined as the range of angles that are included when the brightness is 50% of the maximum brightness. For a detailed description of the illumination angle, refer to the contents of the Taiwan application 104103105.

第11圖顯示依據本發明之另一實施例之發光單元11之剖面圖(發光單元11的輪廓由上視圖觀之可以是正方形、長方形、菱形、三角形或其他多邊形)。發光單元11包含一發光主體111。兩個電極120A、120B位於發光主體111之下表面1111,兩個電極的側表面1201不超過發光主體111的側表面1112。光學轉換結構113覆蓋於發光主體111之上表面1113、側表面1112、以及兩個電極的側表面1201。光學轉換結構113亦填入兩個電極120A、120B之間。兩個電極120A、120B的下表面1202係未被光學轉換結構113所覆蓋且用以電連接到外部電路。光學轉換結構113之下表面1131大體上與電極120A、120B之下表面1202共平面(例如,下表面1202與下表面1131之落差不大於1/2或1/3的電極高度)。反射絕緣層116位於光學轉換結構113之上,覆蓋發光主體111以及光學轉換結構113。反射絕緣層116的側表面1161大體上與光學轉換結構113的側表面1132共平面。反射絕緣層116包含一基質及高反射率物質之混和物。基質可為或矽膠基質(silicone-based)或環氧基質(epoxy-based);高反射率物質可包含二氧化鈦、二氧化矽或氧化鋁。在本實施例中,發光單元11所形成的光場在水平方向的各個角度上具有類似的光強度。Figure 11 is a cross-sectional view showing a light-emitting unit 11 according to another embodiment of the present invention (the outline of the light-emitting unit 11 may be a square, a rectangle, a diamond, a triangle or other polygon as viewed from a top view). The light emitting unit 11 includes a light emitting body 111. The two electrodes 120A, 120B are located on the lower surface 1111 of the light emitting body 111, and the side surfaces 1201 of the two electrodes do not exceed the side surface 1112 of the light emitting body 111. The optical conversion structure 113 covers the upper surface 1113 of the light-emitting body 111, the side surface 1112, and the side surfaces 1201 of the two electrodes. The optical conversion structure 113 is also filled between the two electrodes 120A, 120B. The lower surface 1202 of the two electrodes 120A, 120B is not covered by the optical conversion structure 113 and is used to electrically connect to an external circuit. The lower surface 1131 of the optical conversion structure 113 is substantially coplanar with the lower surface 1202 of the electrodes 120A, 120B (for example, the difference between the lower surface 1202 and the lower surface 1131 is not more than 1/2 or 1/3 of the electrode height). The reflective insulating layer 116 is located above the optical conversion structure 113, covering the light emitting body 111 and the optical conversion structure 113. The side surface 1161 of the reflective insulating layer 116 is substantially coplanar with the side surface 1132 of the optical conversion structure 113. The reflective insulating layer 116 comprises a mixture of a substrate and a high reflectivity material. The substrate can be either a silicone-based or an epoxy-based; the high reflectivity material can comprise titanium dioxide, ceria or alumina. In the present embodiment, the light field formed by the light-emitting unit 11 has a similar light intensity at various angles in the horizontal direction.

相較於第10圖的發光單元,第8圖或是第11圖的發光單元於水平方向具有較大的光強度。因此,在第5圖之發光裝置1000中,發光組件100於次載板上使用第10圖的發光單元11,相較於使用第8圖或是第11圖的發光單元11,發光組件100上次載板數量可以減少。或者,每一次載板上使用的發光單元亦可以較少。反之,若主載板上需要正Z方向的出光,可以配置如第10圖的發光單元,以增加發光裝置1000於正Z方向上的發光量。然而,主載板與次載板所需的發光單元組合不限制於上述的組合,可以視實際發光裝置1000的光型以及亮度的需求交錯配置不同結構的發光單元於主載板與次載板上,例如在次載板上同時配置第8圖的發光單元以及第10圖的發光單元。此外,其他發光組件200~500中,發光單元的配置考量如同發光組件100,在此即不再重複贅述。The light-emitting unit of Fig. 8 or Fig. 11 has a larger light intensity in the horizontal direction than the light-emitting unit of Fig. 10. Therefore, in the light-emitting device 1000 of FIG. 5, the light-emitting assembly 100 uses the light-emitting unit 11 of FIG. 10 on the secondary carrier, and the light-emitting assembly 100 is compared with the light-emitting unit 11 of FIG. 8 or FIG. The number of secondary carriers can be reduced. Alternatively, fewer light-emitting units can be used on each carrier board. On the other hand, if the light emission in the positive Z direction is required on the main carrier, the light emitting unit as shown in FIG. 10 can be disposed to increase the amount of light emitted by the light emitting device 1000 in the positive Z direction. However, the combination of the light-emitting units required for the main carrier board and the secondary carrier board is not limited to the above combination, and the light-emitting units of different configurations may be alternately arranged on the main carrier board and the secondary carrier board according to the requirements of the light type and brightness of the actual light-emitting device 1000. In the above, for example, the light-emitting unit of FIG. 8 and the light-emitting unit of FIG. 10 are simultaneously disposed on the secondary carrier. In addition, in other light-emitting components 200-500, the configuration of the light-emitting unit is the same as that of the light-emitting component 100, and details are not repeated herein.

需了解的是,本發明中上述之實施例在適當的情況下,是可互相組合或替換,而非僅限於所描述之特定實施例。本發明所列舉之各實施例僅用以說明本發明,並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易見之修飾或變更接不脫離本發明之精神與範圍。It is to be understood that the above-described embodiments of the present invention may be combined or substituted with each other as appropriate, and are not limited to the specific embodiments described. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any obvious modifications or variations of the present invention are possible without departing from the spirit and scope of the invention.

100、200、300、400、500 發光組件 101A~101D、201A~201D、301A~301D、501A~501D   次載板 101"A~101"E、101'"A~101'"C            次載板 102、202、302、402、502 、102"、102'"    主載板 10 、20、30、40、50、10'、10"、10'"、5031A~5031D       載板 12A、12B、22A、22B、32A、32B      電極 103A~103D 、203A~203D、303A~303D、10011 突出部 θ、θ1    傾斜角 11、16             發光單元 C  中心軸 d、H5 距離 1021~1024、2021~2024、3021~3024      板邊 H1、H2、H3、L1、L2      長度   101D1 彎折區 101D2 延伸區 141     側邊 1031    第一表面 1032    第二表面 1033    第三表面 T  測試設備 L  折彎線 17       溝槽 A1、A2     對角線 204、304   開孔 203D1 弧角 203D2 第一斜邊 203D3 第二斜邊 B1~B4     半徑 1000    發光裝置 1003    燈罩 1001、1001'     承載板 1002    散熱件 401     第一型次載板 403     第二型次載板 H4、H6、W1、W2      寬度 4021    內板邊 4022    外板邊 10012  側表面 503A~503D    發光結構 C1、C2     直徑 111     發光主體 112     第一透明體 113     光學轉換結構 114     第二透明體 115     第三透明體 120A、120B    電極 116、116A、116B 反射絕緣層 117A、117B    延伸電極 119     光學層 1151    第一部份 1152    第二部份 1151S、1142、1112、1201、1132、1161    側表面 1191    第一光學層 1192    第二光學層 1193    第三光學層 1113    上表面 1111、1131、1202 下表面100, 200, 300, 400, 500 light-emitting modules 101A-101D, 201A-201D, 301A-301D, 501A-501D secondary carrier board 101"A-101"E, 101'"A-101'"C secondary carrier board 102 , 202, 302, 402, 502, 102", 102'" main carrier boards 10, 20, 30, 40, 50, 10', 10", 10'", 5031A to 5031D carrier boards 12A, 12B, 22A, 22B 32A, 32B electrodes 103A to 103D, 203A to 203D, 303A to 303D, 10011 protruding portions θ, θ1 inclination angles 11, 16 light-emitting unit C central axes d, H5 distances 1021 to 1024, 2021 to 2024, 3021 to 3024 H1, H2, H3, L1, L2 length 101D1 bending zone 101D2 extension zone 141 side edge 1031 first surface 1032 second surface 1033 third surface T test equipment L bending line 17 groove A1, A2 diagonal 204, 304 opening 203D1 arc angle 203D2 first oblique side 203D3 second oblique side B1 ~ B4 radius 1000 illuminating device 1003 lampshade 1001, 1001' carrier plate 1002 Heat sink 401 First type secondary carrier plate 403 Second type secondary carrier plate H4, H6, W1, W2 Width 4021 Inner plate edge 4022 Outer plate edge 10012 Side surface 503A to 503D Light-emitting structure C1, C2 Diameter 111 Light-emitting body 112 First Transparent body 113 optical conversion structure 114 second transparent body 115 third transparent body 120A, 120B electrode 116, 116A, 116B reflective insulating layer 117A, 117B extended electrode 119 optical layer 1151 first portion 1152 second portion 1151S, 1142 1112, 1201, 1132, 1161 side surface 1191 first optical layer 1192 second optical layer 1193 third optical layer 1113 upper surface 1111, 1131, 1202 lower surface

第1A圖為依據本發明一實施例之一發光組件之立體示意圖。1A is a perspective view of a light-emitting assembly according to an embodiment of the invention.

第1B圖、第1C圖為第1A圖之發光組件的局部放大圖。Fig. 1B and Fig. 1C are partial enlarged views of the light-emitting unit of Fig. 1A.

第1D圖為第1A圖之發光組件上發光單元的一等效電路示意圖。FIG. 1D is a schematic diagram of an equivalent circuit of the light-emitting unit on the light-emitting component of FIG. 1A.

第1E圖為第1A圖之發光組件上發光單元的另一等效電路示意圖。Fig. 1E is a schematic diagram showing another equivalent circuit of the light-emitting unit on the light-emitting unit of Fig. 1A.

第2A~2D圖為依據本發明一實施例之發光組件之製作流程圖。2A-2D are flow diagrams showing the fabrication of a light-emitting assembly in accordance with an embodiment of the present invention.

第2E圖為本發明另一實施例之一發光組件的載板示意圖。FIG. 2E is a schematic diagram of a carrier board of a light-emitting component according to another embodiment of the present invention.

第2F圖為本發明又一實施例之一發光組件的載板示意圖。FIG. 2F is a schematic diagram of a carrier board of a light-emitting component according to still another embodiment of the present invention.

第3圖為依據本發明一實施例之一發光組件之立體示意圖。3 is a perspective view of a light-emitting assembly according to an embodiment of the invention.

第4圖為依據本發明再一實施例之一發光組件之立體示意圖。4 is a perspective view of a light-emitting assembly according to still another embodiment of the present invention.

第5圖為依據本發明一實施例之一發光裝置之立體示意圖。FIG. 5 is a perspective view of a light emitting device according to an embodiment of the invention.

第6A圖為依據本發明另一實施例之一發光組件之立體示意圖。6A is a perspective view of a light-emitting assembly according to another embodiment of the present invention.

第6B圖為本發明一實施例之一發光組件置於一承載板上的立體示意圖。FIG. 6B is a perspective view of a light-emitting component placed on a carrier board according to an embodiment of the invention.

第7A、7B圖為依據本發明另一實施例之一發光組件之立體示意圖。7A and 7B are perspective views of a light-emitting assembly according to another embodiment of the present invention.

第8圖為依據本發明一實施例的發光單元之剖面示意圖。Figure 8 is a cross-sectional view of a light emitting unit in accordance with an embodiment of the present invention.

第9A、9B圖為依據本發明一實施例的光學層的反射率與波長之關係圖。9A and 9B are graphs showing the relationship between reflectance and wavelength of an optical layer according to an embodiment of the present invention.

第10圖為依據本發明另一實施例的發光單元之剖面示意圖。Figure 10 is a cross-sectional view showing a light emitting unit according to another embodiment of the present invention.

第11圖為依據本發明另一實施例的發光單元之剖面示意圖。Figure 11 is a cross-sectional view showing a light emitting unit according to another embodiment of the present invention.

100 發光組件 101A~101D      次載板 102 主載板 10   載板 12A、12B   電極 103A~103D 突出部 θ   傾斜角 11、16  發光單元 C    中心軸 1021~1024 板邊 H1、H2             長度 1032      第二表面 1033      第三表面100 Light-emitting components 101A-101D Secondary carrier 102 Main carrier 10 Carriers 12A, 12B Electrodes 103A-103D Projection θ Angle of inclination 11, 16 Light-emitting unit C Central axis 1021 to 1024 Plate edge H1, H2 Length 1032 Second surface 1033 Third surface

Claims (10)

一種發光裝置,包含: 一主載板,具有一第一板邊及一第二板邊;       一突出部,自該第一板邊延伸且具有一第一表面以及一與該第一表面相對之第二表面,其中該第一表面與該第二板邊共平面; 一次載板,自該第二表面延伸,並與該突出部具有一傾斜角;以及 一第一發光單元位於該次載板上。A light-emitting device comprising: a main carrier having a first edge and a second edge; a projection extending from the first edge and having a first surface and a first surface opposite the first surface a second surface, wherein the first surface is coplanar with the second plate edge; a primary carrier plate extending from the second surface and having an oblique angle with the protrusion; and a first illumination unit located at the secondary carrier on. 如申請專利範圍第1項所述之發光裝置,其中,該傾斜角介於90~145度。The illuminating device of claim 1, wherein the tilt angle is between 90 and 145 degrees. 如申請專利範圍第1項所述之發光裝置,其中,該第一板邊不平行於該第二板邊。The illuminating device of claim 1, wherein the first rim is not parallel to the second rim. 如申請專利範圍第1項所述之發光裝置,其中,該主載板、該突出部、以及該次載板為一體成形的結構。The illuminating device according to claim 1, wherein the main carrier, the protruding portion, and the secondary carrier are integrally formed. 如申請專利範圍第1項所述之發光裝置,其中,該主載板、該突出部、以及該次載板包括可彎折的材料。The illuminating device of claim 1, wherein the main carrier, the protrusion, and the secondary carrier comprise a bendable material. 如申請專利範圍第1項所述之發光裝置,其中,該次載板具有一寬度,該寬度小於5 mm。The illuminating device of claim 1, wherein the secondary carrier has a width which is less than 5 mm. 如申請專利範圍第1項所述之發光裝置,更包含一第二發光單元位於該主載板上。The illuminating device of claim 1, further comprising a second illuminating unit located on the main carrier. 如申請專利範圍第1項所述之發光裝置,更包含一對正負電極位於該主載板上,且與該第一發光單元形成電性連接。The illuminating device of claim 1, further comprising a pair of positive and negative electrodes on the main carrier and electrically connected to the first illuminating unit. 如申請專利範圍第1項所述之發光裝置,其中,該第一發光單元包含一透明體、一波長轉換層、及一發光主體位於該透明體及該波長轉換層之下。The illuminating device of claim 1, wherein the first illuminating unit comprises a transparent body, a wavelength conversion layer, and a illuminating body is located under the transparent body and the wavelength conversion layer. 如申請專利範圍第9項所述之發光裝置,其中,該發光主體更包含一反射材料位於該發光主體之上。The illuminating device of claim 9, wherein the illuminating body further comprises a reflective material on the illuminating body.
TW104131670A 2015-09-24 2015-09-24 Light-emitting apparatus TWI588406B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM419020U (en) * 2011-06-10 2011-12-21 Parlux Optoelectronics Corp LED lighting device
TW201329382A (en) * 2011-11-23 2013-07-16 3M Innovative Properties Co Flexible light emitting semiconductor device having a three dimensional structure
CN103256506A (en) * 2008-06-04 2013-08-21 长寿灯泡有限责任公司 LED-based light bulb device
TW201441527A (en) * 2013-04-16 2014-11-01 Everlight Electronics Co Ltd Lamp

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103256506A (en) * 2008-06-04 2013-08-21 长寿灯泡有限责任公司 LED-based light bulb device
TWM419020U (en) * 2011-06-10 2011-12-21 Parlux Optoelectronics Corp LED lighting device
TW201329382A (en) * 2011-11-23 2013-07-16 3M Innovative Properties Co Flexible light emitting semiconductor device having a three dimensional structure
TW201441527A (en) * 2013-04-16 2014-11-01 Everlight Electronics Co Ltd Lamp

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