TWI587461B - Improve thermal efficiency heat sink device - Google Patents
Improve thermal efficiency heat sink device Download PDFInfo
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- TWI587461B TWI587461B TW104136556A TW104136556A TWI587461B TW I587461 B TWI587461 B TW I587461B TW 104136556 A TW104136556 A TW 104136556A TW 104136556 A TW104136556 A TW 104136556A TW I587461 B TWI587461 B TW I587461B
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- protective layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本發明是有關於一種散熱片裝置,特別是指一種可提高導熱效率之散熱片裝置。 The present invention relates to a heat sink device, and more particularly to a heat sink device that can improve heat conduction efficiency.
隨著半導體製程的日新月異,現有的半導體元件整體之體積逐漸縮小且效能逐漸提升,其半導體元件運作時所產生的熱量會因效能提升而增加,為了避免半導體元件因熱量無法排除而導致半導體元件燒壞,半導體元件的上方會黏貼金屬材質散熱片來提升半導體元件的散熱效果。 With the ever-changing semiconductor manufacturing process, the size of the existing semiconductor components is gradually reduced and the efficiency is gradually improved. The heat generated by the operation of the semiconductor components is increased due to the improvement of the performance. In order to avoid the semiconductor components being burned due to heat, the semiconductor components are burned. Bad, a metal heat sink is adhered to the top of the semiconductor component to improve the heat dissipation of the semiconductor component.
參閱圖1,為中華民國發明專利第I415228號一種半導體封裝結構、覆晶封裝、及半導體覆晶封裝的形成方法,該半導體封裝結構10包括一具有上表面42之基板20;一安裝於基板20之上表面上42之半導體晶片30;以及一安裝於該半導體晶片30上並藉由一熱介面材料52與一散熱器80黏貼在一起。 1 is a semiconductor package structure, a flip chip package, and a semiconductor flip chip package forming method. The semiconductor package structure 10 includes a substrate 20 having an upper surface 42 and a substrate 20 a semiconductor wafer 30 on the upper surface 42; and a semiconductor wafer 30 mounted on the semiconductor wafer 30 and bonded to a heat sink 80 by a thermal interface material 52.
該熱介面材料52通常為具有導熱特性之膠狀材料,在半導體封裝製程中塗抹於該半導體晶片30之上表面,再將該散熱器80下壓黏貼於該熱介面材料52上,將該半導體晶片30運作時產生熱量傳導至外界,避免蓄積太多熱量導致該半導體晶片30燒毀。 The thermal interface material 52 is usually a gel-like material having thermal conductivity, is applied to the upper surface of the semiconductor wafer 30 in a semiconductor packaging process, and the heat sink 80 is pressure-bonded to the thermal interface material 52 to bond the semiconductor. When the wafer 30 operates, heat is generated to the outside, and accumulation of too much heat is prevented to cause the semiconductor wafer 30 to burn.
但是直接將該熱介面材料直接放置於該半導體晶片及該散熱器將會產生下列問題: However, directly placing the thermal interface material directly on the semiconductor wafer and the heat sink will cause the following problems:
一、接觸面不完整 First, the contact surface is incomplete
由於該散熱器與該熱介面材料為異質性材料,當兩者黏貼在一起時,會產生接觸瑕疵,導致該散熱器與該熱介面材料之接觸 面不完整。 Since the heat sink and the heat interface material are heterogeneous materials, when the two are adhered together, contact defects are generated, resulting in contact of the heat sink with the heat interface material. The face is incomplete.
二、導熱率下降 Second, the thermal conductivity is reduced
當該散熱器與該熱介面材料之接觸面產生瑕疵時,會影響該半導體晶片所產生的熱量無法順利的傳導至該散熱器上,導致該散熱器的熱傳導效率下降。 When the contact surface of the heat sink and the thermal interface material generates germanium, the heat generated by the semiconductor wafer is not smoothly transmitted to the heat sink, resulting in a decrease in heat transfer efficiency of the heat sink.
三、影響使用壽命 Third, affect the service life
該散熱器是使用金屬材質沖壓而成,會有熱脹冷縮的特性,當與異質性材料黏貼時,使用一段時間後會發生接合面剝離的狀況,導致該半導體晶片所產生的熱量無法散熱而影響了半導體產品的使用壽命。 The heat sink is stamped from a metal material and has the characteristics of thermal expansion and contraction. When it is adhered to a heterogeneous material, the joint peeling occurs after a period of use, and the heat generated by the semiconductor wafer cannot be dissipated. It affects the service life of semiconductor products.
因此,如何有效改善半導體產品中散熱片與熱介面材料的接觸狀況,提高半導體產品的散熱效果,以及維持該半導體晶片於一定的溫度範圍內運作,並保護該半導體產品的使用壽命,便成為相關業者亟需努力之目標。 Therefore, how to effectively improve the contact condition between the heat sink and the thermal interface material in the semiconductor product, improve the heat dissipation effect of the semiconductor product, and maintain the semiconductor wafer operating within a certain temperature range, and protect the service life of the semiconductor product, becomes relevant The industry needs to work hard.
有鑑於此,本發明之目的是提供一種可提高導熱效率之散熱片裝置,適用在將一基板上之一晶片產生的熱量,藉由一導熱銀膠傳導至該散熱片裝置,該散熱片裝置包含一本體、一第一保護層,及一導熱接合層。 In view of the above, an object of the present invention is to provide a heat sink device capable of improving heat conduction efficiency, which is suitable for transferring heat generated by a wafer on a substrate to a heat sink device by a heat conductive silver paste, the heat sink device A body, a first protective layer, and a thermally conductive bonding layer are included.
該本體包括一設置於該晶片上方之散熱部,並具有一上表面,及一相反之下表面。 The body includes a heat dissipating portion disposed above the wafer and has an upper surface and an opposite lower surface.
該第一保護層為鎳金屬材質,並鍍覆於該本體之下表面。 The first protective layer is made of nickel metal and is plated on the lower surface of the body.
該導熱接合層為銀金屬材質,並鍍覆於該第一保護層之表面,當該散熱片裝置使用該導熱銀膠與該晶片黏貼在一起時,該導熱接合層可提升與該導熱銀膠的附著效果,用以提高該晶片的散熱效果。 The thermally conductive bonding layer is made of a silver metal material and is plated on the surface of the first protective layer. When the heat dissipating device is adhered to the wafer by using the thermal conductive silver paste, the thermally conductive bonding layer can be lifted with the thermal conductive silver paste. The adhesion effect is used to improve the heat dissipation effect of the wafer.
本發明的又一技術手段,是在於上述之導熱 接合層之表面為粗糙面。 Another technical means of the present invention lies in the above heat conduction The surface of the bonding layer is a rough surface.
本發明的另一技術手段,是在於上述之導熱接合層鍍覆於該第一保護層之表面形狀及位置,與接觸該晶片之表面形狀及位置相互配合。 Another technical means of the present invention is that the thermal conductive bonding layer is plated on the surface shape and position of the first protective layer, and cooperates with the surface shape and position of the wafer.
本發明之再一技術手段,是在於上述之第一保護層是鍍覆於該本體之表面,並將該本體包覆起來。 According to still another aspect of the present invention, the first protective layer is plated on a surface of the body and the body is covered.
本發明的又一技術手段,是在於上述之本體更包括一自該散熱部之周緣往該基板方向延伸的支撐部。 According to still another aspect of the present invention, the body further includes a support portion extending from a periphery of the heat dissipation portion toward the substrate.
本發明的另一技術手段,是在於上述之本體是選自於銅合金、鋁合金此等之一為材料所構成。 Another technical means of the present invention is that the body is made of a material selected from the group consisting of a copper alloy and an aluminum alloy.
本發明的再一技術手段,是在於上述之導熱接合層之厚度大於1μm。 Still another technical means of the present invention is that the thickness of the above thermally conductive bonding layer is greater than 1 μm.
本發明的又一技術手段,是在於上述之第一保護層之厚度人於2μm。 According to still another aspect of the present invention, the thickness of the first protective layer is 2 μm.
本發明的另一技術手段,是在於上述之可提高導熱效率之散熱片裝置更包含一第二保護層,為鉻金屬材質,並鍍覆於該第一保護層的表面。 Another technical means of the present invention is that the heat sink device capable of improving heat conduction efficiency further includes a second protective layer made of chrome metal and plated on the surface of the first protective layer.
本發明的再一技術手段,是在於上述之第二保護層與該導熱接合層相配合將該第一保護層包覆起來。 According to still another aspect of the present invention, the second protective layer is coated with the first protective layer in cooperation with the thermally conductive bonding layer.
本發明之有益功效在於,當使用該導熱銀膠為該晶片與該散熱片裝置之間的導熱材質時,以銀金屬材質之導熱接合層可以提升該散熱片裝置與該導熱銀膠的黏貼度,使該導熱銀膠完整地與該導熱接合層之表面黏貼在一起,不僅可以提高該晶片的散熱效果,更可以延長使用該晶片之半導體產品的使用壽命。 The beneficial effect of the invention is that when the conductive silver paste is used as the heat conductive material between the wafer and the heat sink device, the thermal conductive bonding layer made of silver metal can improve the adhesion between the heat sink device and the heat conductive silver paste. The thermal conductive silver paste is completely adhered to the surface of the thermally conductive bonding layer, which not only improves the heat dissipation effect of the wafer, but also prolongs the service life of the semiconductor product using the wafer.
A‧‧‧基板 A‧‧‧Substrate
B‧‧‧晶片 B‧‧‧ wafer
C‧‧‧導熱銀膠 C‧‧‧thermal silver glue
D‧‧‧環型散熱片 D‧‧‧ring type heat sink
E‧‧‧環氧樹脂 E‧‧‧Epoxy resin
3‧‧‧本體 3‧‧‧ Ontology
31‧‧‧散熱部 31‧‧‧ Department of heat dissipation
311‧‧‧上表面 311‧‧‧ upper surface
312‧‧‧下表面 312‧‧‧ lower surface
32‧‧‧支撐部 32‧‧‧Support
4‧‧‧第一保護層 4‧‧‧First protective layer
5‧‧‧導熱接合層 5‧‧‧ Thermal bonding layer
51‧‧‧粗糙面 51‧‧‧Rough surface
6‧‧‧第二保護層 6‧‧‧Second protective layer
圖1是一裝置示意圖,說明中華民國專利第I415228號一種半導體封裝結構;圖2是一裝置示意圖,說明本發明可提高導熱效率之 散熱片裝置的一第一較佳實施例與一晶片黏貼的態樣;圖3是一局部剖視圖,說明該第一較佳實施例之剖面態樣;圖4是一裝置示意圖,說明本發明可提高導熱效率之散熱片裝置的一第二較佳實施例;圖5是一裝置示意圖,說明該第二較佳實施例與該晶片黏貼的態樣;圖6是一裝置示意圖,說明本發明可提高導熱效率之散熱片裝置的一第三較佳實施例;圖7是一裝置示意圖,說明本發明可提高導熱效率之散熱片裝置的一第四較佳實施例與該晶片黏貼的態樣;圖8是一裝置剖視圖,說明本發明可提高導熱效率之散熱片裝置的一第五較佳實施例;及圖9是一裝置示意圖,說明本發明可提高導熱效率之散熱片裝置的一第六較佳實施例。 1 is a schematic view of a device, illustrating a semiconductor package structure of the Republic of China Patent No. I415228; FIG. 2 is a schematic view of the device, illustrating that the present invention can improve thermal conductivity. FIG. 3 is a partial cross-sectional view showing a cross-sectional view of the first preferred embodiment; FIG. 4 is a schematic view of the device, illustrating a preferred embodiment of the present invention; A second preferred embodiment of the heat sink device for improving heat conduction efficiency; FIG. 5 is a schematic view of the device, illustrating a state in which the second preferred embodiment is adhered to the wafer; FIG. 6 is a schematic view of the device, illustrating the present invention A third preferred embodiment of the heat sink device for improving heat conduction efficiency; FIG. 7 is a schematic view of a device for explaining a fourth preferred embodiment of the heat sink device capable of improving heat conduction efficiency and the wafer; 8 is a cross-sectional view of a device illustrating a fifth preferred embodiment of the heat sink device capable of improving heat conduction efficiency of the present invention; and FIG. 9 is a schematic view of the device, illustrating a sixth embodiment of the heat sink device capable of improving heat conduction efficiency of the present invention. Preferred embodiment.
有關於本發明之相關申請專利特色與技術內容,在以下配合參考圖式之六個較佳實施例的詳細說明中,將可清楚的呈現。 The details of the related patents and the technical contents of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings.
在進行詳細說明前應注意的是,類似的元件是以相同的編號來作表示。並於說明書內容所提及半導體封裝製程可用於覆晶封裝(Flip Chip Package,FC)、銲球陣列封裝(Plastic Ball Grid Array Package,PBGA)、球閘陣列封裝(Ball Grid Array,BGA)、四方扁平封裝(Quad Flat Package,QFP)、四方扁平無引腳封裝(Quad Flat No-lead Package,QFN),及晶片級封裝(Chip Scale Package,CSP)等多種半導體封裝技術。 It should be noted that, before the detailed description, similar elements are denoted by the same reference numerals. The semiconductor packaging process mentioned in the manual can be used for Flip Chip Package (FC), Plastic Ball Grid Array Package (PBGA), Ball Grid Array (BGA), Square A variety of semiconductor packaging technologies, such as Quad Flat Package (QFP), Quad Flat No-lead Package (QFN), and Chip Scale Package (CSP).
參閱圖2、3,為本發明可提高導熱效率之散熱片裝置的第一較佳實施例,適用在將一基板A上之一晶片B產生的熱量,藉由一導熱銀膠C傳導至該散熱片裝 置,並包含一本體3、一第一保護層4,及一導熱接合層5。 Referring to FIG. 2 and FIG. 3, a first preferred embodiment of the heat sink device capable of improving heat conduction efficiency according to the present invention is applicable to heat generated by one of the wafers B on a substrate A, which is conducted by a thermally conductive silver paste C. Heat sink And comprising a body 3, a first protective layer 4, and a thermally conductive bonding layer 5.
本發明所使用之導熱銀膠C其實就是在環氧樹脂內摻入大量的銀粉,使其該導熱銀膠C具有導電性及導熱性,與傳統之環氧樹脂之特性並不相同。該導熱銀膠C雖然摻入大量銀粉的樹脂來獲得很高的導熱係數,但環氧樹脂的比例相對較低,造成穩固該晶片B的強度較差,容易造成產品品質的不穩定。即使如此,該導熱銀膠C製造的成本較低,在業界仍廣泛的被使用。 The thermal conductive silver paste C used in the invention is actually a large amount of silver powder mixed in the epoxy resin, so that the thermal conductive silver paste C has electrical conductivity and thermal conductivity, which is different from the characteristics of the conventional epoxy resin. Although the thermal conductive silver paste C is doped with a large amount of silver powder resin to obtain a high thermal conductivity, the proportion of the epoxy resin is relatively low, resulting in poor strength of the wafer B, which tends to cause instability of product quality. Even so, the cost of manufacturing the thermally conductive silver paste C is relatively low and is widely used in the industry.
該晶片B為半導體產品,並以封裝技術放置於該基板A上,以方便使用於各種電子產品中。由於封裝技術已為業界所熟悉之技術,在此不再詳加贅述。 The wafer B is a semiconductor product and is placed on the substrate A by a packaging technology to facilitate use in various electronic products. Since the packaging technology is already familiar to the industry, it will not be described in detail here.
該本體3包括一設置於該晶片B上方之散熱部31,並具有一上表面311,及一相反之下表面312,是提供該晶片B散熱之用,通常是以金屬材質所製作,較佳地,該本體3是選自於銅合金、鋁合金此等之一為材料所構成,實際實施時,不應以此為限。 The body 3 includes a heat dissipating portion 31 disposed above the wafer B, and has an upper surface 311 and an opposite lower surface 312 for providing heat dissipation of the wafer B, which is usually made of a metal material. The body 3 is made of a material selected from the group consisting of a copper alloy and an aluminum alloy. The actual implementation should not be limited thereto.
該第一保護層4為鎳金屬材質,其成分包括純鎳或是鎳合金其中之一,並鍍覆於該本體3之下表面312上。其中,鎳金屬是一種具有光澤的銀白色金屬,並容易被拋光,且容易於表面形成一層抗氧化之氧化層,通常是用來隔絕空氣之用,以避免該本體3接觸空氣而產生氧化,但本發明之第一保護層4主要是用以鍍覆該導熱接合層5之間的緩衝層,能使該第一保護層4可以牢牢地鍍覆於該本體3之表面,也可以使該導熱接合層5牢牢地鍍覆於該第一保護層4之表面。 The first protective layer 4 is made of nickel metal, and its composition includes one of pure nickel or a nickel alloy, and is plated on the lower surface 312 of the body 3. Among them, nickel metal is a lustrous silver-white metal, and is easy to be polished, and is easy to form an anti-oxidation oxide layer on the surface, which is usually used to isolate air to avoid oxidation of the body 3 in contact with air. However, the first protective layer 4 of the present invention is mainly used for plating the buffer layer between the thermally conductive bonding layers 5, so that the first protective layer 4 can be firmly plated on the surface of the body 3, or The thermally conductive bonding layer 5 is firmly plated on the surface of the first protective layer 4.
該導熱接合層5為銀金屬材質,其成分包括純銀或是銀合金其中之一,並鍍覆於該第一保護層4之表面。由於使用銀金屬材質之導熱接合層5直接鍍覆於本體3之表面時,會因兩者材質本身的特性差異太大,而造成接觸面常常會產生瑕疵而造成該導熱接合層5剝落。 The thermally conductive bonding layer 5 is made of a silver metal material, and its composition includes one of pure silver or a silver alloy, and is plated on the surface of the first protective layer 4. Since the thermal conductive bonding layer 5 made of a silver metal material is directly plated on the surface of the body 3, the characteristics of the two materials themselves are too different, and the contact surface often causes flaws to cause the thermally conductive bonding layer 5 to peel off.
發明人經試驗得知,該導熱接合層5與鎳材質的材料特性差異較小,容易結合在一起。因此,本發明在鍍覆該導熱接合層5前,必須先鍍覆該第一保護層4,不僅可以提升該散熱片裝置每一層的接合度,也可由接合度的提升而提高該散熱片裝置的導熱效果。此外,該導熱接合層5可以分散的鍍覆於該第一保護層4之表面,以減少銀材料的使用量。 The inventors have found through experiments that the material properties of the thermally conductive bonding layer 5 and the nickel material are small and are easily combined. Therefore, in the present invention, before the thermal conductive bonding layer 5 is plated, the first protective layer 4 must be plated first, not only to improve the bonding degree of each layer of the heat sink device, but also to improve the heat sink device by increasing the bonding degree. Thermal conductivity. Further, the thermally conductive bonding layer 5 may be dispersedly plated on the surface of the first protective layer 4 to reduce the amount of silver material used.
由於該導熱接合層5是以銀金屬材質所製成,當該散熱片裝置使用該導熱銀膠C與該晶片B黏貼在一起時,該導熱接合層5之銀金屬表面與該導熱銀膠C中的銀金屬材質相近,該導熱接合層5可提升與該導熱銀膠C的附著效果,用以提高該晶片B的散熱效果。 Since the heat conductive bonding layer 5 is made of a silver metal material, when the heat sink device is adhered to the wafer B by using the heat conductive silver paste C, the silver metal surface of the heat conductive bonding layer 5 and the heat conductive silver paste C The silver metal material is similar in material, and the heat conductive bonding layer 5 can enhance the adhesion effect with the thermal conductive silver paste C to improve the heat dissipation effect of the wafer B.
較佳地,該導熱接合層5之表面為粗糙面51,可以增加該導熱銀膠C中環氧樹脂的附著效果,以使該導熱銀膠C穩固晶片B的效果提升。此外,經發明人多次試驗得知,該第一保護層4之厚度大於2μm,該導熱接合層5才能緊緊鍍覆於該第一保護層4之表面,而不易剝落;該導熱接合層5之厚度大於1μm,該導熱銀膠C才能緊緊黏貼於該導熱接合層5之表面,而不易分離。使本發明具有最佳的導熱效率,以使該晶片B所產生的熱量能第一時間傳導至外界,並達到最好的散熱的效果。 Preferably, the surface of the thermally conductive bonding layer 5 is a rough surface 51, which can increase the adhesion effect of the epoxy resin in the thermal conductive silver paste C, so that the effect of the thermal conductive silver paste C to stabilize the wafer B is improved. In addition, the inventors have repeatedly tested that the thickness of the first protective layer 4 is greater than 2 μm, and the thermally conductive bonding layer 5 can be tightly plated on the surface of the first protective layer 4 without being easily peeled off; When the thickness of 5 is greater than 1 μm, the thermally conductive silver paste C can be tightly adhered to the surface of the thermally conductive bonding layer 5 without being easily separated. The invention has the best heat conduction efficiency, so that the heat generated by the wafer B can be conducted to the outside for a first time and achieve the best heat dissipation effect.
在該第一較佳實施例中,該本體3為方型片體之態樣,在半導體封裝時,該散熱片裝置之下周緣必須另使用一環型散熱片D,以普通具較佳黏著性之環氧樹脂E黏貼於該基板A上,以將該晶片B密封起來,由於半導體封裝製程已為業界所熟悉之技術,在此便不再詳加贅述。 In the first preferred embodiment, the body 3 is in the form of a square body. When the semiconductor package is used, a ring-shaped heat sink D must be used on the lower periphery of the heat sink device to provide better adhesion. The epoxy resin E is adhered to the substrate A to seal the wafer B. Since the semiconductor packaging process is already familiar to the industry, it will not be described in detail herein.
參閱圖4、5,為本發明可提高導熱效率之散熱片裝置的第二較佳實施例,該第二較佳實施例與該第一較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該導熱接合層5鍍覆於該第一保護層4之表面形狀及 位置,與接觸該晶片B之表面形狀及位置相互配合。 Referring to FIG. 4 and FIG. 5, a second preferred embodiment of the heat sink device capable of improving heat conduction efficiency is provided. The second preferred embodiment is substantially the same as the first preferred embodiment, and the same is not described herein. The difference is that the thermal conductive bonding layer 5 is plated on the surface shape of the first protective layer 4 and The position cooperates with the shape and position of the surface contacting the wafer B.
雖然銀材質具有較好的導電及導熱特性,但是銀金屬是屬於成本較高的貴重金屬,大量使用將提高製造成本。因此,在該第二較佳實施例中,該導熱接合層5將鍍覆部分之第一保護層4的表面上,且該導熱接合層5之面積大小及位置都必須符合該晶片B之上表面的面積大小及位置,使本發明之散熱片裝置於半導體封裝製程時,該導熱接合層5剛剛好貼覆於該晶片B的上方,並與該導熱銀膠C黏貼在一起,用以減少銀金屬的使用量,以最佳的經濟效果達到最佳的散熱功效。 Although silver has good electrical and thermal conductivity properties, silver metal is a relatively expensive precious metal, and a large amount of use will increase manufacturing costs. Therefore, in the second preferred embodiment, the thermally conductive bonding layer 5 will be on the surface of the first protective layer 4 of the plated portion, and the size and position of the thermally conductive bonding layer 5 must conform to the wafer B. The size and position of the surface, when the heat sink device of the present invention is used in the semiconductor packaging process, the thermally conductive bonding layer 5 is just pasted over the wafer B and adhered to the thermally conductive silver paste C to reduce The amount of silver metal used to achieve the best heat dissipation with the best economic results.
此外,該導熱接合層5並不需要在鍍覆面中進行整面鍍覆,實際實施時,可於鍍覆面上進行局部鍍覆,不應以此為限。舉例來說,該導熱接合層5可於該第一保護層4之表面形成環型之態樣,該環型態樣之導熱接合層5與該晶片B之表面,以該導熱銀膠C黏貼在一起,並達到導電及導熱的特性。 In addition, the thermally conductive bonding layer 5 does not need to be plated on the plated surface. In actual implementation, partial plating may be performed on the plated surface, and should not be limited thereto. For example, the thermally conductive bonding layer 5 can form a ring-shaped surface on the surface of the first protective layer 4. The thermally conductive bonding layer 5 of the ring-shaped surface and the surface of the wafer B are pasted with the thermal conductive silver paste C. Together, and achieve electrical and thermal properties.
參閱圖6,為本發明可提高導熱效率之散熱片裝置的第三較佳實施例,該第三較佳實施例與該第二較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該第一保護層4是鍍覆於該本體3之表面上,並將該本體3包覆起來。 Referring to FIG. 6 , a third preferred embodiment of the heat sink device capable of improving heat conduction efficiency is provided. The third preferred embodiment is substantially the same as the second preferred embodiment, and the same is not described herein again. The first protective layer 4 is plated on the surface of the body 3 and wraps the body 3.
雖然本發明之第一保護層4是用來增加該導熱接合層5的鍍覆效果,使該導熱接合層5可以牢牢地黏貼於該散熱片裝置之中,但鎳金屬材質之第一保護層4具有防止氧化的效果,因此,在該第三較佳時施例中,該第一保護層4將該本體3包覆起來,用以避免該本體3與空氣接觸而產生氧化。 Although the first protective layer 4 of the present invention is used to increase the plating effect of the thermally conductive bonding layer 5, the thermally conductive bonding layer 5 can be firmly adhered to the heat sink device, but the first protection of the nickel metal material The layer 4 has an effect of preventing oxidation, and therefore, in the third preferred embodiment, the first protective layer 4 covers the body 3 to prevent oxidation of the body 3 in contact with air.
參閱圖7,為本發明可提高導熱效率之散熱片裝置的第四較佳實施例,該第四較佳實施例與該第三較佳實施例大致相同,相同之處於此不再贅述,不同之處在 於該本體3更包括一自該散熱部31之周緣往該基板A方向延伸的支撐部32。 Referring to FIG. 7 , a fourth preferred embodiment of the heat sink device capable of improving heat conduction efficiency of the present invention is substantially the same as the third preferred embodiment, and the same is not described herein again. Where The body 3 further includes a support portion 32 extending from the periphery of the heat dissipation portion 31 in the direction of the substrate A.
該第四較佳實施例之本體3由該散熱部31及該支撐部32相互配合,使該散熱片裝置之外貌近似帽型,該本體3之支撐部32可取代該環型散熱片D,並於封裝製程中簡化封裝步驟,直接使用該環氧樹脂E黏貼於該基板A上,能降低半導體封裝的成本,並確實將該晶片B密封起來。 The heat dissipation portion 31 and the support portion 32 cooperate with each other to make the heat sink device have a cap shape, and the support portion 32 of the body 3 can replace the ring heat sink D. The packaging step is simplified in the packaging process, and the epoxy resin E is directly adhered to the substrate A, which can reduce the cost of the semiconductor package and surely seal the wafer B.
參閱圖8,為本發明可提高導熱效率之散熱片裝置的第五較佳實施例,該第五較佳實施例與該第四較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該可提高導熱效率之散熱片裝置,更包含一第二保護層6,為鉻金屬材質,其成分包括純鉻或是鉻合金其中之一,並鍍覆於該第一保護層4的表面。 Referring to FIG. 8 , a fifth preferred embodiment of the heat sink device capable of improving heat conduction efficiency is provided. The fifth preferred embodiment is substantially the same as the fourth preferred embodiment, and the same portions are not described herein again. The heat sink device capable of improving heat conduction efficiency further comprises a second protective layer 6 made of chrome metal, and the composition comprises one of pure chromium or chrome alloy, and is plated on the first protective layer 4 . s surface.
鉻是一種銀色的金屬,質地堅硬,表面帶有光澤,具有很高的熔點。因此,本發明於該第一保護層4的表面再鍍覆一層質地堅硬之第二保護層6,用以保護該散熱片裝置。 Chromium is a silvery metal with a hard texture, a shiny surface and a high melting point. Therefore, the surface of the first protective layer 4 is further plated with a hardened second protective layer 6 for protecting the heat sink device.
雖然該第五較佳實施例是將該導熱接合層5直接鍍覆於該第二保護層6之表面上,與鎳金屬材質比較,銀與鉻的表面接合度雖然較低,其品質尚可接受,但該散熱片裝置之製作程序較為簡單,可減低製作的成本,並可使用於低階的電子產品中。 Although the fifth preferred embodiment directly coats the thermally conductive bonding layer 5 on the surface of the second protective layer 6, the surface bonding degree of silver and chromium is lower than that of the nickel metal material, and the quality thereof is acceptable. Accepted, but the heat sink device is simpler to manufacture, can reduce the cost of production, and can be used in low-end electronic products.
參閱圖9,為本發明可提高導熱效率之散熱片裝置的第六較佳實施例,該第六較佳實施例與該第五較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該第二保護層6與該導熱接合層5相配合將該第一保護層4包覆起來。 Referring to FIG. 9 , a sixth preferred embodiment of the heat sink device capable of improving heat conduction efficiency is provided. The sixth preferred embodiment is substantially the same as the fifth preferred embodiment, and the same portions are not described herein again. The second protective layer 6 is bonded to the thermally conductive bonding layer 5 to wrap the first protective layer 4.
在該第六較佳實施例中,該第一保護層4將該本體3包覆起來,避免該本體3接觸空氣而氧化,該第 二保護層6與該導熱接合層5相配合將該第一保護層4包覆起來,使該第一保護層4受堅硬之第二保護層6保護住,並且該導熱接合層5與該第一保護層4黏貼在一起,使該導熱接合層5穩固地黏貼於該散熱片裝置中,以提升該散熱片裝置的導熱效率,及產品的壽命,適合使用於高階或是在嚴苛環境使用下的電子產品中。 In the sixth preferred embodiment, the first protective layer 4 wraps the body 3 to prevent the body 3 from being exposed to air and oxidizing. The second protective layer 6 is matched with the thermally conductive bonding layer 5 to wrap the first protective layer 4, so that the first protective layer 4 is protected by the hard second protective layer 6, and the thermally conductive bonding layer 5 and the first A protective layer 4 is adhered together, so that the thermally conductive bonding layer 5 is firmly adhered to the heat sink device to improve the heat conduction efficiency of the heat sink device and the life of the product, and is suitable for use in high-order or in harsh environments. Under the electronic products.
由上述說明可知,本發明可提高導熱效率之散熱片裝置確實具有以下優點: As can be seen from the above description, the heat sink device of the present invention which can improve the heat conduction efficiency does have the following advantages:
一、提升穩固晶片的強度 First, improve the strength of the stable wafer
該導熱接合層5之表面為粗糙面51,可以增加該導熱銀膠C中環氧樹脂的附著效果,以使該導熱銀膠C穩固晶片B的效果提升。 The surface of the thermally conductive bonding layer 5 is a rough surface 51, which can increase the adhesion effect of the epoxy resin in the thermal conductive silver paste C, so that the effect of the thermal conductive silver paste C to stabilize the wafer B is improved.
二、增加使用壽命 Second, increase the service life
該第一保護層4將該本體3包覆起來,避免該本體3接觸空氣而氧化,該第二保護層6與該導熱接合層5相配合將該第一保護層4包覆起來,使該第一保護層4,及該本體3受堅硬之第二保護層6保護住,可提升該散熱片裝置的結構強度,並延長使用的壽命。 The first protective layer 4 wraps the body 3 to prevent the body 3 from being oxidized by contact with air. The second protective layer 6 cooperates with the thermally conductive bonding layer 5 to wrap the first protective layer 4 to The first protective layer 4 and the body 3 are protected by the hard second protective layer 6, which can improve the structural strength of the heat sink device and prolong the service life.
三、增加晶片的散熱率 Third, increase the heat dissipation rate of the wafer
該導熱接合層5與鎳材質的材料特性差異較小,容易結合在一起,可以提升該散熱片裝置本身的導熱效果;該導熱接合層5之銀金屬表面與該導熱銀膠C中的銀金屬材質相近,該導熱接合層5可提升與該導熱銀膠C的附著效果,使該晶片B的熱量傳導出去,以增加晶片B的散熱效率。 The thermal conductive bonding layer 5 and the nickel material have different material characteristics and are easily combined to improve the heat conduction effect of the heat sink device itself; the silver metal surface of the heat conductive bonding layer 5 and the silver metal in the thermal conductive silver paste C The thermal conductive bonding layer 5 can improve the adhesion effect with the thermal conductive silver paste C, and the heat of the wafer B can be conducted to increase the heat dissipation efficiency of the wafer B.
綜上所述,本發明於使用導熱銀膠C之散熱 片中,鍍覆了一層可與該導熱銀膠C完美黏貼在一起之導熱接合層5,可以提升該晶片B上的導熱效率。並且為了使該導熱接合層5穩固地附著於該散熱片裝置中,於該本體3外層更鍍覆了一層第一保護層4,達到該本體3與該導熱接合層5之間的緩衝層。再利用堅硬之第二保護層6包覆於該第一保護層4之表面,可提升該散熱片裝置的結構強度,並延長使用的壽命,故確實能夠達到本發明之目的。 In summary, the present invention uses the heat dissipation of the thermal conductive silver paste C In the sheet, a thermal conductive bonding layer 5 which is perfectly adhered to the thermal conductive silver paste C is plated to improve the heat conduction efficiency on the wafer B. In order to firmly adhere the thermally conductive bonding layer 5 to the heat sink device, a layer of the first protective layer 4 is further plated on the outer layer of the body 3 to reach a buffer layer between the body 3 and the thermally conductive bonding layer 5. The second protective layer 6 is coated on the surface of the first protective layer 4 to improve the structural strength of the heat sink device and prolong the service life. Therefore, the object of the present invention can be achieved.
惟以上所述者,僅為本發明之六個較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the six preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change of the patent application scope and the description of the invention is Modifications are still within the scope of the invention.
3‧‧‧本體 3‧‧‧ Ontology
4‧‧‧第一保護層 4‧‧‧First protective layer
5‧‧‧導熱接合層 5‧‧‧ Thermal bonding layer
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