TWI587330B - 電荷儲存結構及其製造方法 - Google Patents

電荷儲存結構及其製造方法 Download PDF

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Publication number
TWI587330B
TWI587330B TW101149593A TW101149593A TWI587330B TW I587330 B TWI587330 B TW I587330B TW 101149593 A TW101149593 A TW 101149593A TW 101149593 A TW101149593 A TW 101149593A TW I587330 B TWI587330 B TW I587330B
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TW
Taiwan
Prior art keywords
low purity
low
tantalum
porous tantalum
nitride
Prior art date
Application number
TW101149593A
Other languages
English (en)
Chinese (zh)
Other versions
TW201342406A (zh
Inventor
唐納德 加德納
卡瑞 拼特
查理 賀查瓦思
金薇
陳朝暉
劉揚
艾瑞克 漢那
約翰 葛斯塔夫遜
Original Assignee
英特爾股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 英特爾股份有限公司 filed Critical 英特爾股份有限公司
Publication of TW201342406A publication Critical patent/TW201342406A/zh
Application granted granted Critical
Publication of TWI587330B publication Critical patent/TWI587330B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW101149593A 2011-12-27 2012-12-24 電荷儲存結構及其製造方法 TWI587330B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/067434 WO2013100916A1 (en) 2011-12-27 2011-12-27 Fabrication of porous silicon electrochemical capacitors

Publications (2)

Publication Number Publication Date
TW201342406A TW201342406A (zh) 2013-10-16
TWI587330B true TWI587330B (zh) 2017-06-11

Family

ID=48698160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101149593A TWI587330B (zh) 2011-12-27 2012-12-24 電荷儲存結構及其製造方法

Country Status (5)

Country Link
US (1) US10170244B2 (enExample)
DE (1) DE112011106043T5 (enExample)
IN (1) IN2014CN03385A (enExample)
TW (1) TWI587330B (enExample)
WO (1) WO2013100916A1 (enExample)

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US9741881B2 (en) * 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US9409767B2 (en) 2011-11-03 2016-08-09 Intel Corporation Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
US10170244B2 (en) 2011-12-27 2019-01-01 Intel Corporation Fabrication of porous silicon electrochemical capacitors
US9025313B2 (en) 2012-08-13 2015-05-05 Intel Corporation Energy storage devices with at least one porous polycrystalline substrate
WO2014145559A2 (en) * 2013-03-15 2014-09-18 Cleanvolt Energy, Inc. Improved electrodes and currents through the use of organic and organometallic high dielectric constant materials in energy storage devices and associated methods
US10535466B1 (en) * 2014-11-05 2020-01-14 United States Of America As Represented By The Secretary Of The Navy Super dielectric capacitor having electrically and ionically conducting electrodes
US10128057B2 (en) 2015-10-28 2018-11-13 Stmicroelectronics S.R.L. Supercapacitor with movable separator and method of operating a supercapacitor
CN105719843B (zh) * 2016-01-21 2018-05-04 东南大学 一种氮化钼/氮化钛纳米管阵列复合材料及其制备方法和应用
CN105655148B (zh) * 2016-01-21 2018-02-02 东南大学 一种纳米多孔结构的氮化钛酸锂纳米线/纳米膜一体化材料及其制备方法和应用
CN105655139B (zh) * 2016-01-21 2018-05-25 东南大学 一种氧化钼/碳包覆氮化钛纳米管阵列复合材料及其制备方法和应用
DE102016202979A1 (de) * 2016-02-25 2017-08-31 Robert Bosch Gmbh Hybridsuperkondensator
US10636583B2 (en) 2017-02-14 2020-04-28 Rolls-Royce Corporation Material property capacitance sensor
NO343382B1 (en) 2017-03-07 2019-02-18 Univ College Of Southeast Norway On-chip supercapacitor With Silicon nanostructure
CN110574132B (zh) 2017-03-07 2022-12-09 挪威东南大学 用于片上超级电容器的蚀刻的硅上的沉积的碳膜

Citations (2)

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US5635419A (en) * 1994-10-28 1997-06-03 International Business Machines Corporation Porous silicon trench and capacitor structures
WO2011123135A1 (en) * 2010-04-02 2011-10-06 Intel Corporation Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same

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US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
DE10242877A1 (de) * 2002-09-16 2004-03-25 Infineon Technologies Ag Halbleitersubstrat sowie darin ausgebildete Halbleiterschaltung und zugehörige Herstellungsverfahren
IL153289A (en) 2002-12-05 2010-06-16 Acktar Ltd Electrodes for electrolytic capacitors and method for producing them
US7033703B2 (en) 2002-12-20 2006-04-25 Firefly Energy, Inc. Composite material and current collector for battery
KR101036378B1 (ko) * 2003-10-10 2011-05-23 히다치 훈마츠 야킨 가부시키가이샤 전기 이중층 캐패시터용 전극과 그의 제조 방법, 및 전기이중층 캐패시터, 및 도전성 접착제
EP1911053B1 (en) 2005-07-27 2009-01-14 Cellergy Ltd Multilayered electrochemical energy storage device and method of manufacture thereof
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
US8526167B2 (en) * 2009-09-03 2013-09-03 Applied Materials, Inc. Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications
FR2963476B1 (fr) * 2010-07-30 2012-08-24 Centre Nat Rech Scient Procede de realisation d'un condensateur comprenant un reseau de nano-capacites
US9409767B2 (en) * 2011-11-03 2016-08-09 Intel Corporation Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
US10170244B2 (en) 2011-12-27 2019-01-01 Intel Corporation Fabrication of porous silicon electrochemical capacitors

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5635419A (en) * 1994-10-28 1997-06-03 International Business Machines Corporation Porous silicon trench and capacitor structures
WO2011123135A1 (en) * 2010-04-02 2011-10-06 Intel Corporation Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same

Also Published As

Publication number Publication date
IN2014CN03385A (enExample) 2015-07-03
TW201342406A (zh) 2013-10-16
WO2013100916A1 (en) 2013-07-04
US10170244B2 (en) 2019-01-01
DE112011106043T5 (de) 2014-09-18
US20140233152A1 (en) 2014-08-21

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