DE112011106043T5 - Herstellung von elektrochemischen Kondensatoren mit porösem Silicium - Google Patents

Herstellung von elektrochemischen Kondensatoren mit porösem Silicium Download PDF

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Publication number
DE112011106043T5
DE112011106043T5 DE112011106043.2T DE112011106043T DE112011106043T5 DE 112011106043 T5 DE112011106043 T5 DE 112011106043T5 DE 112011106043 T DE112011106043 T DE 112011106043T DE 112011106043 T5 DE112011106043 T5 DE 112011106043T5
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DE
Germany
Prior art keywords
low purity
porous silicon
silicon
pores
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112011106043.2T
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German (de)
English (en)
Inventor
Donald S. Gardner
Charles W. Holzwarth
Zhaohui Chen
Cary L. Pint
Wei Jin
Yang Liu
Eric C. Hannah
John L. Gustafson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE112011106043T5 publication Critical patent/DE112011106043T5/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE112011106043.2T 2011-12-27 2011-12-27 Herstellung von elektrochemischen Kondensatoren mit porösem Silicium Withdrawn DE112011106043T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/067434 WO2013100916A1 (en) 2011-12-27 2011-12-27 Fabrication of porous silicon electrochemical capacitors

Publications (1)

Publication Number Publication Date
DE112011106043T5 true DE112011106043T5 (de) 2014-09-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011106043.2T Withdrawn DE112011106043T5 (de) 2011-12-27 2011-12-27 Herstellung von elektrochemischen Kondensatoren mit porösem Silicium

Country Status (5)

Country Link
US (1) US10170244B2 (enExample)
DE (1) DE112011106043T5 (enExample)
IN (1) IN2014CN03385A (enExample)
TW (1) TWI587330B (enExample)
WO (1) WO2013100916A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016202979A1 (de) * 2016-02-25 2017-08-31 Robert Bosch Gmbh Hybridsuperkondensator

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US9741881B2 (en) * 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
CN104025225B (zh) 2011-11-03 2017-06-09 英特尔公司 储能结构、制造用于储能结构的支承结构的方法及包含储能结构的微电子组件和系统
IN2014CN03385A (enExample) 2011-12-27 2015-07-03 Intel Corp
US9025313B2 (en) 2012-08-13 2015-05-05 Intel Corporation Energy storage devices with at least one porous polycrystalline substrate
CN105283926B (zh) 2013-03-15 2019-05-10 克林伏特能源有限公司 利用有机和有机金属高介电常数材料改进能量存储设备中的电极和电流及其改进方法
US10535466B1 (en) * 2014-11-05 2020-01-14 United States Of America As Represented By The Secretary Of The Navy Super dielectric capacitor having electrically and ionically conducting electrodes
US10128057B2 (en) 2015-10-28 2018-11-13 Stmicroelectronics S.R.L. Supercapacitor with movable separator and method of operating a supercapacitor
CN105655148B (zh) * 2016-01-21 2018-02-02 东南大学 一种纳米多孔结构的氮化钛酸锂纳米线/纳米膜一体化材料及其制备方法和应用
CN105655139B (zh) * 2016-01-21 2018-05-25 东南大学 一种氧化钼/碳包覆氮化钛纳米管阵列复合材料及其制备方法和应用
CN105719843B (zh) * 2016-01-21 2018-05-04 东南大学 一种氮化钼/氮化钛纳米管阵列复合材料及其制备方法和应用
WO2018152211A1 (en) * 2017-02-14 2018-08-23 Rolls-Royce Corporation Material property capacitance sensor
WO2018162580A2 (en) 2017-03-07 2018-09-13 University College Of Southeast Norway Deposited carbon film on etched silicon for on-chip supercapacitor
NO343382B1 (en) 2017-03-07 2019-02-18 Univ College Of Southeast Norway On-chip supercapacitor With Silicon nanostructure

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US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
DE10242877A1 (de) * 2002-09-16 2004-03-25 Infineon Technologies Ag Halbleitersubstrat sowie darin ausgebildete Halbleiterschaltung und zugehörige Herstellungsverfahren
IL153289A (en) * 2002-12-05 2010-06-16 Acktar Ltd Electrodes for electrolytic capacitors and method for producing them
US7033703B2 (en) 2002-12-20 2006-04-25 Firefly Energy, Inc. Composite material and current collector for battery
US7486497B2 (en) * 2003-10-10 2009-02-03 Japan Gore-Tex, Inc. Electrode for electric double layer capacitor, method for manufacturing same, electric double layer capacitor, and conductive adhesive
ATE421160T1 (de) 2005-07-27 2009-01-15 Cellergy Ltd Mehrschichtige elektrochemische energiespeichereinrichtung und verfahren zu ihrer herstellung
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
US8526167B2 (en) * 2009-09-03 2013-09-03 Applied Materials, Inc. Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications
EP2553696A4 (en) 2010-04-02 2016-07-06 Intel Corp LOAD MEMORY DEVICE, METHOD OF MANUFACTURING THEREFOR, METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE STRUCTURE THEREFOR, MOBILE ELECTRONIC DEVICE THEREWITH AND MICROELECTRONIC DEVICE THEREWITH
FR2963476B1 (fr) * 2010-07-30 2012-08-24 Centre Nat Rech Scient Procede de realisation d'un condensateur comprenant un reseau de nano-capacites
CN104025225B (zh) * 2011-11-03 2017-06-09 英特尔公司 储能结构、制造用于储能结构的支承结构的方法及包含储能结构的微电子组件和系统
IN2014CN03385A (enExample) 2011-12-27 2015-07-03 Intel Corp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016202979A1 (de) * 2016-02-25 2017-08-31 Robert Bosch Gmbh Hybridsuperkondensator

Also Published As

Publication number Publication date
WO2013100916A1 (en) 2013-07-04
TWI587330B (zh) 2017-06-11
IN2014CN03385A (enExample) 2015-07-03
TW201342406A (zh) 2013-10-16
US20140233152A1 (en) 2014-08-21
US10170244B2 (en) 2019-01-01

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