TWI584902B - Laser processing device and laser processing method (1) - Google Patents
Laser processing device and laser processing method (1) Download PDFInfo
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- TWI584902B TWI584902B TW102109467A TW102109467A TWI584902B TW I584902 B TWI584902 B TW I584902B TW 102109467 A TW102109467 A TW 102109467A TW 102109467 A TW102109467 A TW 102109467A TW I584902 B TWI584902 B TW I584902B
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- 238000003672 processing method Methods 0.000 title claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 230000035515 penetration Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 98
- 238000000034 method Methods 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 16
- 238000005498 polishing Methods 0.000 description 14
- 238000003754 machining Methods 0.000 description 8
- 238000002407 reforming Methods 0.000 description 8
- 229910009372 YVO4 Inorganic materials 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0461—Welding tables
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
本發明是有關於一種在半導體晶圓等之被加工物施行雷射加工之雷射加工裝置及雷射加工方法。 The present invention relates to a laser processing apparatus and a laser processing method for performing laser processing on a workpiece such as a semiconductor wafer.
IC、LSI、LED等之複數元件藉由分割預定線而劃分形成於表面之矽晶圓、藍寶石晶圓等之晶圓,藉由加工裝置而分割成各個元件,且經分割之元件廣泛使用於手機、電腦等之各種電子機器。 A plurality of components such as ICs, LSIs, and LEDs are divided into wafers such as tantalum wafers and sapphire wafers formed on a surface by dividing a predetermined line, and are divided into individual elements by a processing device, and the divided components are widely used. Various electronic devices such as mobile phones and computers.
晶圓分割時,廣為採用使用稱為切割器之切削裝置之切割方法。切割方法中,是將以金屬或樹脂固定鑽石等之研磨粒而作成厚度30μm左右之切削刀片,以30000rpm左右的高速旋轉,切入晶圓,藉此切削晶圓,分割成各個元件晶片。 In the case of wafer division, a cutting method using a cutting device called a cutter is widely used. In the dicing method, a cutting insert having a thickness of about 30 μm is fixed by grinding a grain of diamond or the like with a metal or a resin, and is rotated at a high speed of about 30,000 rpm to cut into a wafer, thereby cutting the wafer and dividing it into individual element wafers.
另一方面,近年來,開發了使用雷射光束將晶圓分割成各個元件晶片之方法,並且實用化。使用雷射光束將晶圓分割成各個元件晶片之方法已知的有如以下說明之第1及第2加工方法。 On the other hand, in recent years, a method of dividing a wafer into individual element wafers using a laser beam has been developed and put into practical use. A method of dividing a wafer into individual element wafers using a laser beam is known as the first and second processing methods described below.
第1加工方法是將對晶圓具有穿透性之波長(例 如1064nm)之雷射光束之聚光點定位於對應於分割預定線之晶圓內部,將雷射光束沿著分割預定線照射而於晶圓內部形成改質層,然後藉由分割裝置對晶圓賦與外力,以改質層為分割起點而將晶圓分割成各個元件晶片之方法(例如,參照日本特許第3408805號)。 The first processing method is to have a wavelength that is transparent to the wafer (for example) The concentrating point of the laser beam, such as 1064 nm, is positioned inside the wafer corresponding to the predetermined dividing line, and the laser beam is irradiated along the dividing line to form a modified layer inside the wafer, and then the crystal is formed by the dividing device. A method of dividing a wafer into individual element wafers by using a modified layer as a starting point for the division and external force (for example, refer to Japanese Patent No. 3408805).
第2加工方法是將對晶圓具有吸收性之波長(例如355nm)之雷射光束之聚光點照射對應於分割預定線之區域,藉由削磨加工形成加工溝,然後賦與外力,以加工溝為分割起點而將晶圓分割成各個元件晶片之方法(例如參照日本特開平10-305420號)。 In the second processing method, a light-converging point of a laser beam having a wavelength (for example, 355 nm) having an absorptivity to a wafer is irradiated to a region corresponding to a predetermined dividing line, and a processing groove is formed by a grinding process, and then an external force is applied to The processing groove is a method of dividing the wafer into individual element wafers by dividing the starting point (for example, refer to Japanese Patent Laid-Open No. Hei 10-305420).
使用雷射光束之加工方法相較於使用切割器之切割方法,可加快加工速度,並且為由藍寶石或SiC等之硬度高的素材構成之晶圓也比較容易加工。 The processing method using the laser beam can speed up the processing speed compared to the cutting method using the cutter, and the wafer made of a material having high hardness such as sapphire or SiC is relatively easy to process.
又,可令改質層或加工溝為例如10μm以下等之較狹幅度,因此相對於以切割方法進行加工的情況,具有可增加每1片晶圓之元件取量的優點。 Further, since the modified layer or the processing groove can be made to have a narrow width of, for example, 10 μm or less, it is advantageous in that the amount of component per wafer can be increased with respect to the processing by the dicing method.
另,以研磨裝置實施內面研磨之前之半導體晶圓的內面殘存有氧化膜或氮化膜。又,也有表面形成有Low-k膜之半導體晶圓或內面形成有金屬膜之晶圓。 Further, an oxide film or a nitride film remains on the inner surface of the semiconductor wafer before the inner surface polishing is performed by the polishing apparatus. Further, there are also a semiconductor wafer having a Low-k film formed on its surface or a wafer having a metal film formed on its inner surface.
當在該等附有膜之被加工物照射雷射光束而施行雷射加工時,會因為膜而照射之雷射光束的一部份反射。反射率會因膜的種類或厚度等而異,也有每被加工物的反射率不同者或在一個被加工物內反射率不均者。 When laser processing is performed by irradiating a laser beam with the processed object to which the film is attached, a part of the laser beam irradiated by the film is reflected. The reflectance varies depending on the type and thickness of the film, and the reflectance of each workpiece is different or the reflectance is not uniform in one workpiece.
在利用對被加工物具有穿透性之波長,在被加工 物內部形成改質層之第1加工方法、及利用對被加工物具有吸收性之波長,在被加工物施行削磨加工之第2加工方法中,也由於被加工物之反射率大時,穿透或吸收之雷射光束的光量會減少,因此為了施行所期望的雷射加工,必須提高照射之雷射光束的輸出。 Being processed at a wavelength that is transparent to the workpiece In the first processing method in which the modified layer is formed inside the material, and in the second processing method in which the workpiece is subjected to the sharpening process by the wavelength at which the workpiece is absorbing, the reflectance of the workpiece is also large. The amount of light that is transmitted or absorbed by the laser beam is reduced, so in order to perform the desired laser processing, the output of the irradiated laser beam must be increased.
【專利文獻1】日本特許第3408805號公報 [Patent Document 1] Japanese Patent No. 3408805
【專利文獻2】日本特開平第10-305420號公報 [Patent Document 2] Japanese Patent Laid-Open No. 10-305420
【專利文獻3】日本特開2009-021476號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-021476
【專利文獻4】日本特開2010-245172號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2010-245172
若每加工物的反射率不同時,以單一的加工條件在複數被加工物施行雷射加工時,在被加工物之間,藉由照射雷射光束而形成之雷射加工構的深度會不均,並且會有藉由照射雷射光束而形成之改質層不均的問題。 When the reflectance of each workpiece is different, when a plurality of workpieces are subjected to laser processing under a single processing condition, the depth of the laser processing formed by irradiating the laser beam between the workpieces is not Both, and there is a problem of unevenness of the reforming layer formed by irradiating the laser beam.
又,在一個被加工物內反射率不均者,當以單一的加工條件施行雷射加工時,具有因為區域而藉由照射雷射光束而形成之雷射加工構的深度產生不均,並且藉由照射雷射光束而形成之改質層產生不均的問題。 Further, when the reflectance is not uniform in one workpiece, when the laser processing is performed under a single processing condition, the depth of the laser processing structure formed by irradiating the laser beam due to the region is uneven, and The modified layer formed by irradiating the laser beam produces a problem of unevenness.
本發明是有鑑於此點而作成者,其目的在於提供一種不受被加工物的雷射照射面的狀態影響而可施行均一 的雷射加工之雷射加工裝置及雷射加工方法。 The present invention has been made in view of the above, and an object thereof is to provide a uniformity that can be performed without being affected by the state of a laser irradiation surface of a workpiece. Laser processing equipment for laser processing and laser processing methods.
根據請求項第1項之發明,提供一種雷射加工裝置,是對被加工物施行雷射加工之雷射加工裝置,其特徵在於包含有:工作夾台,用以保持被加工物;雷射光束照射單元,包含雷射振盪器及具有將該雷射振盪器所振盪之雷射光束聚光之聚光鏡之加工頭;反射光量檢測器,是檢測由該雷射光束照射單元照射到保持於該工作夾台之被加工物之雷射光束的反射光量;及輸出調整單元,是根據以該反射光量檢測器檢測之反射光量,調整由該雷射振盪器振盪之雷射光束之輸出。 According to the invention of claim 1, there is provided a laser processing apparatus which is a laser processing apparatus for performing laser processing on a workpiece, comprising: a working chuck for holding a workpiece; and a laser a beam irradiation unit comprising: a laser oscillator and a processing head having a condensing mirror for concentrating the laser beam oscillated by the laser oscillator; and a reflected light amount detector for detecting that the laser beam irradiation unit is irradiated to remain The amount of reflected light of the laser beam of the workpiece of the working chuck; and the output adjusting unit adjusts the output of the laser beam oscillated by the laser oscillator based on the amount of reflected light detected by the reflected light amount detector.
較佳的是,雷射加工裝置更具有段數算出構件,該段數算出構件是根據前述反射光量檢測器所檢測之反射光量,算出以該雷射光束照射單元沿著被加工物之厚度方向橫跨被加工物施行複數段之雷射加工的段數。 Preferably, the laser processing apparatus further includes a number-of-segment calculating means for calculating the thickness direction of the object to be processed by the laser beam irradiation unit based on the amount of reflected light detected by the reflected light amount detector. The number of segments of the laser processed across the workpiece.
根據請求項第3項之發明,提供一種雷射加工方法,是對被加工物施行雷射加工之雷射加工方法,其特徵在於包含下述步驟:保持步驟,將被加工物保持在工作夾台;反射光量檢測用雷射光束照射步驟,由雷射光束照射單元以第1條件於保持在該工作夾台之被加工物照射雷射光束;反射光量檢測步驟,用以檢測在該反射光量檢測用雷射光束照射步驟照射到被加工物之雷射光束在被加工物上面反射之反射光的反射光量;及雷射加工步驟,在實施該反射光量檢測步驟後,根據該反射光量檢測步驟所檢測之 反射光量,設定在該雷射光束照射單元照射之雷射光束之輸出,由雷射光束照射單元以第2條件將雷射光束照射於保持在該工作夾台之被加工物,對被加工物施行雷射加工。 According to the invention of claim 3, there is provided a laser processing method which is a laser processing method for performing laser processing on a workpiece, which comprises the steps of: maintaining a step of holding a workpiece in a working folder a laser beam irradiation step for detecting the amount of reflected light, the laser beam irradiation unit irradiates the laser beam with the workpiece held by the work chuck under the first condition; and the reflected light amount detecting step for detecting the amount of the reflected light Detecting the amount of reflected light of the reflected light reflected from the laser beam irradiated onto the workpiece by the laser beam irradiation step; and performing a laser processing step according to the reflected light amount detecting step after performing the reflected light amount detecting step Detected The amount of reflected light is set to the output of the laser beam irradiated by the laser beam irradiation unit, and the laser beam irradiation unit irradiates the laser beam to the workpiece held in the work table under the second condition, and the workpiece is processed. Perform laser processing.
較佳的是,雷射加工方法更具有段數算出步驟,該段數算出步驟是根據前述反射光量檢測步驟所檢測之反射光量,算出沿著被加工物之厚度方向橫跨被加工物施行複數段之雷射加工的段數,前述雷射加工步驟中,是根據該段數算出步驟所算出之段數,沿著被加工物之厚度方向橫跨被加工物施行複數段之雷射加工。 Preferably, the laser processing method further includes a number-of-segment calculation step of calculating a plurality of reflected light amounts detected in the reflected light amount detecting step, and calculating a plurality of processed objects across the thickness direction of the workpiece. The number of segments of the laser processing of the segment, in the laser processing step, the number of segments calculated according to the number of segments is calculated, and a plurality of laser processes are performed across the workpiece along the thickness direction of the workpiece.
本發明之雷射加工裝置由於具有:用以檢測在被加工物上面反射之反射光之光量之反射光量檢測器、及根據檢測出之反射光量將雷射光束之輸出調整為最適合之輸出調整單元,因此不受被加工物之雷射照射面狀態影響而可施行均一的雷射加工。 The laser processing apparatus of the present invention has a reflected light amount detector for detecting the amount of reflected light reflected on the workpiece, and an output adjustment for adjusting the output of the laser beam according to the detected amount of reflected light. The unit is thus not subject to the laser irradiation surface condition of the workpiece, and uniform laser processing can be performed.
本發明之雷射加工方法中,由於具有反射光量檢測用雷射光束照射步驟、檢測反射光量之反射光量檢測步驟、根據在反射光量檢測步驟所檢測出之反射光量設定雷射光束之輸出並且對被加工物施行雷射加工之雷射加工步驟,因此不受被加工物之雷射照射面狀態影響而可對被加工物施行均一的雷射加工。 In the laser processing method of the present invention, the laser beam irradiation step for detecting the amount of reflected light is detected, the reflected light amount detecting step of detecting the amount of reflected light, and the output of the laser beam is set based on the amount of reflected light detected in the reflected light amount detecting step, and Since the workpiece is subjected to a laser processing step of laser processing, it is possible to perform uniform laser processing on the workpiece without being affected by the state of the laser irradiation surface of the workpiece.
2‧‧‧雷射加工裝置 2‧‧‧ Laser processing equipment
4‧‧‧靜止基台 4‧‧‧Standing abutment
6‧‧‧第1滑動塊 6‧‧‧1st sliding block
8‧‧‧滾珠螺絲 8‧‧‧Ball screws
10‧‧‧脈衝馬達 10‧‧‧pulse motor
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧內面 11b‧‧‧ inside
12‧‧‧加工進給構件 12‧‧‧Processing feed members
13‧‧‧分割預定線 13‧‧‧Division line
14‧‧‧導軌 14‧‧‧ rails
15‧‧‧元件 15‧‧‧ components
16‧‧‧第2滑動塊 16‧‧‧2nd sliding block
17‧‧‧氧化膜 17‧‧‧Oxide film
18‧‧‧滾珠螺絲 18‧‧‧ Ball Screws
19‧‧‧改質層 19‧‧‧Modified layer
20‧‧‧脈衝馬達 20‧‧‧pulse motor
22‧‧‧分度進給構件 22‧‧‧Dimension feed components
24‧‧‧導軌 24‧‧‧rail
26‧‧‧支持部件 26‧‧‧Support parts
28‧‧‧工作夾台 28‧‧‧Working table
30‧‧‧夾具 30‧‧‧Clamp
32‧‧‧柱體 32‧‧‧Cylinder
34‧‧‧雷射光束照射單元 34‧‧‧Laser beam irradiation unit
35‧‧‧殼體 35‧‧‧Shell
36‧‧‧加工頭 36‧‧‧Processing head
38‧‧‧拍攝單元 38‧‧‧ Shooting unit
40‧‧‧控制器 40‧‧‧ Controller
42‧‧‧中央處理裝置 42‧‧‧Central processing unit
44‧‧‧唯讀記憶體 44‧‧‧Read-only memory
46‧‧‧隨機存取記憶體 46‧‧‧ Random access memory
48‧‧‧計數器 48‧‧‧ counter
50‧‧‧輸入介面 50‧‧‧Input interface
52‧‧‧輸出介面 52‧‧‧Output interface
54‧‧‧線性標度 54‧‧‧linear scale
56‧‧‧加工進給量檢測構件 56‧‧‧Processing feed detection component
60‧‧‧分度進給量檢測構件 60‧‧‧Divided feed detection component
62‧‧‧雷射振盪單元 62‧‧‧Laser oscillation unit
64‧‧‧雷射振盪器 64‧‧‧Laser oscillator
66‧‧‧重複頻率設定單元 66‧‧‧Repetition frequency setting unit
68‧‧‧輸出調整單元 68‧‧‧Output adjustment unit
69‧‧‧雷射光束 69‧‧‧Laser beam
70‧‧‧殼體 70‧‧‧shell
71‧‧‧反射光 71‧‧‧ Reflected light
72‧‧‧反射鏡 72‧‧‧Mirror
73‧‧‧相關關係 73‧‧‧ Related Relations
74‧‧‧聚光鏡 74‧‧‧Condenser
76‧‧‧半鏡 76‧‧‧Half mirror
78‧‧‧反射光量檢測器 78‧‧‧Reflected light detector
80‧‧‧段數算出構件 80‧‧‧Segment calculation component
83‧‧‧研磨輪 83‧‧‧ grinding wheel
84‧‧‧旋轉軸 84‧‧‧Rotary axis
86‧‧‧輪座 86‧‧‧ wheel seat
88‧‧‧研磨輪 88‧‧‧ grinding wheel
90‧‧‧螺絲 90‧‧‧ screws
92‧‧‧環狀基台 92‧‧‧Circular abutments
94‧‧‧磨石 94‧‧‧Martstone
96‧‧‧工作夾台 96‧‧‧Working table
F‧‧‧環狀框架 F‧‧‧Ring frame
T‧‧‧黏著膠帶 T‧‧‧Adhesive tape
圖1為雷射加工裝置之立體圖。 Figure 1 is a perspective view of a laser processing apparatus.
圖2為雷射光束照射單元之光學系統的區塊圖。 2 is a block diagram of an optical system of a laser beam irradiation unit.
圖3為半導體晶圓之表面側立體圖。 3 is a perspective view of a surface side of a semiconductor wafer.
圖4為顯示將半導體晶圓之表面側貼附於外周部裝固於環狀框架之黏著膠帶之樣態的分解立體圖。 4 is an exploded perspective view showing a state in which a surface side of a semiconductor wafer is attached to an adhesive tape on which an outer peripheral portion is attached to an annular frame.
圖5為顯示保持步驟之部份截面側面圖。 Figure 5 is a partial cross-sectional side view showing the holding step.
圖6為顯示反射光量檢測用雷射光束照射步驟之部份截面側面圖。 Fig. 6 is a partial cross-sectional side view showing a step of irradiating a laser beam for detecting reflected light amount.
圖7為顯示被加工物之反射率與適當的脈衝能量之相關關係。 Fig. 7 is a graph showing the correlation between the reflectance of the workpiece and the appropriate pulse energy.
圖8為顯示在晶圓內部形成改質層之雷射加工步驟之部份截面側面圖。 Figure 8 is a partial cross-sectional side view showing a laser processing step of forming a modified layer inside a wafer.
圖9為顯示實施於晶圓之表面側之反射光量檢測用雷射光束照射步驟之部份截面側面圖。 Fig. 9 is a partial cross-sectional side view showing a step of irradiating a laser beam for detecting the amount of reflected light applied to the surface side of the wafer.
圖10為顯示檢測反射光量並且施行雷射加工之實施形態的部份截面側面圖。 Fig. 10 is a partial cross-sectional side view showing an embodiment in which the amount of reflected light is detected and laser processing is performed.
圖11為顯示內面研磨步驟的立體圖。 Figure 11 is a perspective view showing the inner surface grinding step.
以下,參照圖示詳細說明本發明之實施形態。參照圖1,是顯示本發明實施形態之雷射加工裝置之外觀立體圖。雷射加工裝置2包含有可在X軸方向上移動地搭載於靜止基台4上之第1滑動塊6。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a perspective view showing the appearance of a laser processing apparatus according to an embodiment of the present invention. The laser processing apparatus 2 includes a first slider 6 that is mounted on the stationary base 4 so as to be movable in the X-axis direction.
第1滑動塊6是藉由由滾珠螺絲8及脈衝馬達10構成之加工進給構件12,沿著一對導軌14而朝加工進給方向、即X軸方向移動。 The first slide block 6 is moved in the machining feed direction, that is, the X-axis direction along the pair of guide rails 14 by the machining feed member 12 composed of the ball screw 8 and the pulse motor 10.
第1滑動塊6上搭載有可朝Y軸方向移動之第2滑動塊16。即,第2滑動塊16藉由由滾珠螺絲18及脈衝馬達20構成之分度進給構件22,沿著一對導軌24朝分度進給方向、即Y軸方向移動。 The first slider 16 is mounted on the first slider 6 so as to be movable in the Y-axis direction. In other words, the second slider 16 is moved along the index feed direction, that is, the Y-axis direction along the pair of guide rails 24 by the index feed member 22 including the ball screw 18 and the pulse motor 20.
工作夾台28隔著圓筒之支持部件26而搭載於第2滑動塊16上,且工作夾台28可藉由加工進給構件12及分度進給構件22而朝X軸方向及Y軸方向移動。工作夾台28設有將吸引保持於工作夾台28之半導體晶圓夾持之夾具30。 The work chuck 28 is mounted on the second slide block 16 via the cylindrical support member 26, and the work chuck 28 can be oriented in the X-axis direction and the Y-axis by machining the feed member 12 and the index feed member 22. Move in direction. The work chuck 28 is provided with a jig 30 for holding and holding the semiconductor wafer held by the work chuck 28.
靜止基台4豎立設置有柱體32,於該柱體32安裝有雷射光束照射單元34。雷射光束照射單元34包含有:收容於殼體35中之圖2所示之雷射振盪單元62、及安裝於殼體35之前端之加工頭36。 The stationary base 4 is provided with a column 32 erected, and a laser beam irradiation unit 34 is mounted on the column 32. The laser beam irradiation unit 34 includes a laser oscillation unit 62 shown in FIG. 2 housed in the casing 35, and a machining head 36 attached to the front end of the casing 35.
雷射振盪單元62是如圖2所示,包含有振盪YAG雷射或YVO4雷射之雷射振盪器64、及重複頻率設定單元66。雖然沒有特別圖示,但雷射振盪器64具有布魯斯特(Brewster)窗,且由雷射振盪器64出射之雷射光束為直線偏光之雷射光束。 The laser oscillation unit 62 is a laser oscillator 64 including an oscillating YAG laser or a YVO4 laser, and a repetition frequency setting unit 66 as shown in FIG. Although not specifically illustrated, the laser oscillator 64 has a Brewster window, and the laser beam emitted by the laser oscillator 64 is a linearly polarized laser beam.
在殼體35之前端部配設有加工頭36與在X軸方向排列且用以檢測應進行雷射加工之加工區域之拍攝單元38。拍攝單元38包含有藉由可視光而拍攝半導體晶圓之加工區域之一般CCD等之拍攝部件。 At the front end of the casing 35, a machining head 36 and a photographing unit 38 arranged in the X-axis direction for detecting a processing region to be subjected to laser processing are disposed. The imaging unit 38 includes an imaging unit such as a general CCD that captures a processing area of the semiconductor wafer by visible light.
拍攝單元38進而包含有:將紅外線照射於半導體晶圓之紅外線照射構件;捕捉紅外線照射構件所照射之紅外線之光學系統;及紅外線拍攝構件,是由用以輸出對應 於該光學系統捕捉之紅外線之電信號之紅外線CCD等之紅外線拍攝部件所構成,拍攝之圖像信號發送到控制器(控制構件)40。 The imaging unit 38 further includes: an infrared ray irradiation member that irradiates infrared rays on the semiconductor wafer; an optical system that captures infrared rays irradiated by the infrared ray irradiation member; and an infrared ray imaging member that is used to output the corresponding An infrared imaging unit such as an infrared CCD of an electric signal of infrared rays captured by the optical system is configured, and an image signal to be captured is transmitted to a controller (control means) 40.
控制器40由電腦所構成,具備有:依據控制程式進行運算處理之中央處理裝置(CPU)42、用以儲存控制程式等之唯讀記憶體(ROM)44、用以儲存運算結果等之可讀寫之隨機存取記憶體(RAM)46、計數器48、及輸入介面50、及輸出介面52。 The controller 40 is composed of a computer, and includes a central processing unit (CPU) 42 that performs arithmetic processing according to a control program, a read-only memory (ROM) 44 for storing a control program, and the like, and a storage operation result. Read and write random access memory (RAM) 46, counter 48, and input interface 50, and output interface 52.
56是由沿著導軌14配設之線性標度54、與配設於第1滑動塊6且未圖示之讀取頭所構成之加工進給量檢測構件,加工進給量檢測構件56之檢測信號輸入到控制器40之輸入介面50。 56 is a machining feed amount detecting member composed of a linear scale 54 disposed along the guide rail 14 and a reading head (not shown) disposed in the first slide block 6, and the machining feed amount detecting member 56 is processed. The detection signal is input to the input interface 50 of the controller 40.
60是由沿著導軌24配設之線性標度58與配設於第2滑動塊16且未圖示之讀取頭所構成之分度進給量檢測構件,分度進給量檢測構件60之檢測信號輸入到控制器40之輸入介面50。 Reference numeral 60 denotes an indexing amount detecting member constituted by a linear scale 58 disposed along the guide rail 24 and a reading head (not shown) disposed on the second slider 16, and the indexing feed amount detecting member 60 The detection signal is input to the input interface 50 of the controller 40.
拍攝單元38所拍攝之圖像信號也輸入到控制器40之輸入介面50。另一方面,由控制器40之輸出介面52輸出控制信號到脈衝馬達10、脈衝馬達20、雷射光束照射單元34等。 The image signal captured by the imaging unit 38 is also input to the input interface 50 of the controller 40. On the other hand, the control signal is output from the output interface 52 of the controller 40 to the pulse motor 10, the pulse motor 20, the laser beam irradiation unit 34, and the like.
參照圖2,顯示了本發明實施形態之雷射光束照射單元34之光學系統。加工頭36之殼體70內收容有反射鏡76與聚光鏡74。進而,在反射鏡72與聚光鏡74之間,配設有半鏡(分光器)76。 Referring to Fig. 2, an optical system of a laser beam irradiation unit 34 according to an embodiment of the present invention is shown. A mirror 76 and a condensing mirror 74 are housed in the casing 70 of the machining head 36. Further, a half mirror (beam splitter) 76 is disposed between the mirror 72 and the condensing mirror 74.
由雷射光束振盪單元62振盪進而經輸出調整單元68調整為預定功率之雷射光束69被加工頭36之反射鏡72反射,其一部分穿透半鏡76而被聚光鏡74照射到為被加工物之晶圓11。 The laser beam 69, which is oscillated by the laser beam oscillating unit 62 and adjusted to a predetermined power by the output adjusting unit 68, is reflected by the mirror 72 of the processing head 36, and a part thereof penetrates the half mirror 76 and is irradiated by the condensing mirror 74 to be processed. Wafer 11.
在晶圓11上面反射之反射光71在聚光鏡74聚光,且其一部份在半鏡76反射,並藉由光電二極體等之受光部件構成之反射光量檢測器78檢測反射光量。根據該反射光量,控制器40是如後詳細說明般,用以控制雷射光束振盪單元62及輸出調整單元68。 The reflected light 71 reflected on the wafer 11 is condensed by the condensing mirror 74, and a part thereof is reflected by the half mirror 76, and the amount of reflected light is detected by the reflected light amount detector 78 composed of a light receiving member such as a photodiode. Based on the amount of reflected light, the controller 40 controls the laser beam oscillating unit 62 and the output adjusting unit 68 as will be described in detail later.
半鏡76亦可配設於聚光鏡74與被加工物(晶圓)11之間,但由於將半鏡76配設於較聚光鏡74上游側者可僅將在晶圓11之上面反射之反射光在聚光鏡74聚光,入射到半鏡76,故反射光量之檢測宜為此種配置。 The half mirror 76 may be disposed between the condensing mirror 74 and the workpiece (wafer) 11. However, since the half mirror 76 is disposed on the upstream side of the condensing mirror 74, only the reflected light reflected on the wafer 11 can be reflected. The condensing mirror 74 condenses light and enters the half mirror 76, so the detection of the amount of reflected light is preferably such a configuration.
參照圖3,顯示為本發明之雷射加工方法之被加工物之一之半導體晶圓11之表面側立體圖。半導體晶圓11是由例如厚度為700μm之矽晶圓構成,在表面11a形成有格子狀的複數分割預定線13,並且在複數分割預定線13所劃分之各區域,分別形成有IC、LSI等之元件15。半導體晶圓11之內面11b是如圖4所示,形成有由SiO2構成之氧化膜17。 Referring to Fig. 3, there is shown a front side perspective view of a semiconductor wafer 11 which is one of the workpieces of the laser processing method of the present invention. The semiconductor wafer 11 is formed of, for example, a silicon wafer having a thickness of 700 μm, and a lattice-shaped plurality of predetermined dividing lines 13 are formed on the surface 11a, and ICs, LSIs, and the like are formed in respective regions divided by the plurality of predetermined dividing lines 13. Element 15. As shown in FIG. 4, the inner surface 11b of the semiconductor wafer 11 is formed with an oxide film 17 made of SiO 2 .
本發明之雷射加工方法中,被加工物並不限定於如圖3所示之半導體晶圓11,包含表面或者內面具有氧化膜、氮化膜、金屬膜、Low-k膜等之膜之被加工物。 In the laser processing method of the present invention, the workpiece is not limited to the semiconductor wafer 11 shown in FIG. 3, and includes a film having an oxide film, a nitride film, a metal film, a Low-k film, or the like on the surface or the inner surface. The processed object.
在實施本發明之雷射加工方法時,半導體晶圓11之表面11a側是如圖4所示,外周部貼附於裝固於環狀框架 之黏著膠帶T,且其內面11b為上側。 In carrying out the laser processing method of the present invention, the surface 11a side of the semiconductor wafer 11 is as shown in FIG. 4, and the outer peripheral portion is attached to the annular frame. The adhesive tape T is adhered to, and the inner surface 11b thereof is the upper side.
接著如圖5所示,半導體晶圓11隔著黏著膠帶T而吸引保持於雷射加工裝置2之工作夾台28,且環狀框架F被夾具30夾持而固定。 Next, as shown in FIG. 5, the semiconductor wafer 11 is sucked and held by the work chuck 28 of the laser processing apparatus 2 via the adhesive tape T, and the annular frame F is pinched and fixed by the clamp 30.
其次,如圖6所示,實施反射光量檢測用雷射光束照射步驟,其是以第1條件,由雷射光束照射單元34之加工頭36照射雷射光束69至保持在工作夾台28之晶圓11。 Next, as shown in FIG. 6, a laser beam irradiation step for detecting the amount of reflected light is performed, and the laser beam 69 is irradiated to the working chuck 28 by the processing head 36 of the laser beam irradiation unit 34 under the first condition. Wafer 11.
在實施該反射光量檢測用雷射光束照射步驟前,實施用以檢測應雷射加工之分割預定線13之校準。即,藉拍攝單元38之紅外線相機由內面11b側拍攝晶圓11,使用廣為人知之圖案匹配等之圖像處理,檢測朝第1方向伸長之分割預定線13及朝與第1方向直交之第2方向伸長之分割預定線13。 Before the step of irradiating the reflected light amount detecting laser beam is performed, the calibration for detecting the predetermined dividing line 13 for laser processing is performed. In other words, the infrared camera of the imaging unit 38 takes the wafer 11 from the inner surface 11b side, and uses image processing such as pattern matching, which is widely known, to detect the predetermined dividing line 13 extending in the first direction and the first straight line with the first direction. The dividing line 13 is elongated in the 2 direction.
其他實施形態亦可為由透明部件形成工作夾台28之保持面,並使用配置於工作夾台28下之相機拍攝晶圓11,實施校準。 In other embodiments, the holding surface of the work chuck 28 may be formed by a transparent member, and the wafer 11 may be photographed using a camera disposed under the work chuck 28 to perform calibration.
進而,本發明中,在檢測晶圓11之反射光量前,預先準備具有已知之反射率之一個或複數個基準工作件,在基準工作件檢測反射光量,以該時之反射光量為基準資料,先記憶於控制器40之RAM46。 Further, in the present invention, before detecting the amount of reflected light of the wafer 11, one or a plurality of reference workpieces having a known reflectance are prepared in advance, and the amount of reflected light is detected in the reference workpiece, and the amount of reflected light at that time is used as a reference material. It is first stored in the RAM 46 of the controller 40.
該反射光量檢測用雷射光束照射步驟中,是如圖6所示,將工作夾台28朝箭頭記號X1方向加工進給,並且由加工頭36照射雷射光束69至形成有氧化膜17之晶圓11的內面11b,使用反射光量檢測器78檢測該反射光71。 In the laser beam irradiation step for detecting the amount of reflected light, as shown in FIG. 6, the work chuck 28 is machined in the direction of the arrow mark X1, and the laser beam 69 is irradiated by the processing head 36 to the oxide film 17 is formed. The reflected light 71 is detected by the reflected light amount detector 78 on the inner surface 11b of the wafer 11.
例如,在晶圓11之任意之分割預定線13、複數之分割預定線13、或者全部的分割預定線13照射反射光量檢測用雷射光束,然後檢測反射光量。 For example, the arbitrary divided line 13 of the wafer 11, the plurality of divided planned lines 13, or all of the planned dividing lines 13 are irradiated with the reflected light amount detecting laser beam, and then the amount of reflected light is detected.
藉由雷射光束69之照射,在晶圓11之內部形成改質層時之反射光量檢測用雷射光束的照射條件是例如以下所示。 The irradiation conditions of the reflected light amount detecting laser beam when the reforming layer is formed inside the wafer 11 by the irradiation of the laser beam 69 are as follows, for example.
光源:LD激化Q轉換 Nd:YVO4脈衝雷射 Light source: LD-induced Q conversion Nd: YVO4 pulse laser
波長:1064nm Wavelength: 1064nm
重複頻率:100kHz Repeat frequency: 100kHz
平均輸出:0.1W Average output: 0.1W
加工進給速度:400mm/s Processing feed rate: 400mm/s
在反射光量檢測用雷射光束照射步驟於晶圓11之內面11b照射雷射光束69時,在形成有氧化膜17之內面11b反射之反射光71會在圖2所示之聚光鏡74聚光,且其一部分會在半鏡76反射而入射到由受光部件構成之反射光量檢測器78,檢測在晶圓11之內面11b反射之反射光量。經檢測之反射光量與儲存於RAM46之反射率由已知之基準工作件反射光量算出晶圓11之內面11b之反射率。 When the laser beam irradiation step of the reflected light amount detecting laser beam irradiates the laser beam 69 on the inner surface 11b of the wafer 11, the reflected light 71 reflected on the inner surface 11b on which the oxide film 17 is formed is collected in the condensing mirror 74 shown in FIG. The light is partially reflected by the half mirror 76 and incident on the reflected light amount detector 78 composed of the light receiving member, and detects the amount of reflected light reflected on the inner surface 11b of the wafer 11. The reflectance of the detected inner surface 11b of the wafer 11 is calculated from the amount of reflected light stored in the RAM 46 and the amount of reflected light from the known reference workpiece.
控制器40之ROM44依被加工物之種類或膜種類預先儲存有如圖7所示之顯示複數個反射率與適當的脈衝能量的相關關係73的相關圖。因此,可由該等相關圖得到相對於該反射率之適當的脈衝能量。 The ROM 44 of the controller 40 stores in advance a correlation diagram showing a correlation 73 between a plurality of reflectances and an appropriate pulse energy as shown in Fig. 7 depending on the type of the workpiece or the type of the film. Thus, the appropriate pulse energy relative to the reflectivity can be obtained from the correlation maps.
以適當的脈衝能量為基礎,調整由雷射振盪器64振盪出之雷射光束之平均輸出與重複頻率。例如,反射率 為50%時,由圖7之相關圖決定適當的脈衝能量為20μJ。因此,由脈衝能量(J)=平均輸出(W)/重複頻率(Hz),設定例如重複頻率為100kHz、平均輸出為2W。 The average output and repetition frequency of the laser beam oscillated by the laser oscillator 64 are adjusted based on the appropriate pulse energy. For example, reflectivity At 50%, the appropriate pulse energy is determined to be 20 μJ from the correlation diagram of FIG. Therefore, by the pulse energy (J) = average output (W) / repetition frequency (Hz), for example, the repetition frequency is 100 kHz and the average output is 2 W.
由於雷射振盪器64之最大功率會因反射率而不足,因此在一次的雷射光束之照射中,無法於晶圓11之內部形成足夠的改質層。因此,根據在反射光量檢測步驟所檢測出之反射光量,沿著晶圓11之厚度方向橫跨晶圓形成複數段之改質層。根據反射光量算出必要之段數之段數算出構件80先儲存於控制器40之ROM44內。 Since the maximum power of the laser oscillator 64 is insufficient due to the reflectance, it is impossible to form a sufficient reforming layer inside the wafer 11 in the irradiation of the primary laser beam. Therefore, a plurality of modified layers are formed across the wafer in the thickness direction of the wafer 11 in accordance with the amount of reflected light detected in the reflected light amount detecting step. The number-of-segment calculation means 80 for calculating the necessary number of segments based on the amount of reflected light is first stored in the ROM 44 of the controller 40.
實施反射光量檢測步驟後,實施雷射加工步驟,其是根據在反射光量檢測步驟所檢測出之反射光量,設定在雷射光束照射單元34照射之雷射光束之輸出,並且由雷射光束照射單元34之加工頭36以第2條件於保持在工作夾台28之晶圓11照射雷射光束,在晶圓11之內部形成改質層19。 After the reflected light amount detecting step is performed, a laser processing step is performed which sets the output of the laser beam irradiated by the laser beam irradiating unit 34 based on the amount of reflected light detected in the reflected light amount detecting step, and is irradiated by the laser beam The processing head 36 of the unit 34 irradiates the laser beam 11 on the wafer 11 held by the working chuck 28 under the second condition, and forms the modified layer 19 inside the wafer 11.
該雷射加工步驟中,是如圖8所示,將工作夾台28朝箭頭記號X1方向加工進給,並且由雷射光束照射單元34之加工頭36以第2條件照射雷射光束69,然後於晶圓11內部形成改質層19。 In the laser processing step, as shown in FIG. 8, the working chuck 28 is machined in the direction of the arrow mark X1, and the processing head 36 of the laser beam irradiation unit 34 irradiates the laser beam 69 under the second condition. A modified layer 19 is then formed inside the wafer 11.
將工作夾台28朝Y軸方向分度進給,並且沿著朝第1方向伸長之分割預定線13在晶圓11之內部依序形成同樣的改質層19。接著,將工作夾台28旋轉90度,沿著朝第2方向伸長之分割預定線13形成同樣的改質層19。 The work chuck 28 is indexed in the Y-axis direction, and the same modified layer 19 is sequentially formed inside the wafer 11 along the dividing line 13 elongated in the first direction. Next, the working chuck 28 is rotated by 90 degrees, and the same modified layer 19 is formed along the dividing line 13 which is elongated in the second direction.
因晶圓11之厚度或材質而分割性較低時,於晶圓 內部形成複數段之改質層19。又,晶圓11之反射率高且雷射振盪器64之最大功率過低,而在一次的雷射光束之照射中無法於晶圓11之內部形成充分的改質層19時,會於晶圓11之內部形成複數段之改質層19。 When the splitting property is low due to the thickness or material of the wafer 11, the wafer is A plurality of modified layers 19 are formed inside. Moreover, the reflectivity of the wafer 11 is high and the maximum power of the laser oscillator 64 is too low, and when a sufficient reforming layer 19 cannot be formed inside the wafer 11 during the irradiation of the primary laser beam, it will be crystallized. A modified layer 19 of a plurality of segments is formed inside the circle 11.
在該改質層形成步驟支雷射加工條件是例如以下所設定。 The laser processing conditions in the reforming layer forming step are set, for example, as follows.
光源:LD激化Q轉換 Nd:YVO4脈衝雷射 Light source: LD-induced Q conversion Nd: YVO4 pulse laser
波長:1064nm Wavelength: 1064nm
重複頻率:100kHz Repeat frequency: 100kHz
平均輸出:2.0W Average output: 2.0W
加工進給速度:400mm/s Processing feed rate: 400mm/s
參照圖9,顯示用以說明於晶圓11施行削磨加工時之反射光量檢測用雷射光束照射步驟之部分截面側面圖。例如,在形成於晶圓11之表面11a之Low-k膜施行削磨加工時,雷射光束69入射到晶圓11之表面11a側。接著以反射光量檢測器78檢測在表面11a反射之反射光71之光量。 Referring to Fig. 9, there is shown a partial cross-sectional side view for explaining a step of irradiating a laser beam for detecting the amount of reflected light when the wafer 11 is subjected to a sharpening process. For example, when the Low-k film formed on the surface 11a of the wafer 11 is subjected to a sharpening process, the laser beam 69 is incident on the surface 11a side of the wafer 11. Next, the amount of light reflected by the reflected light 71 reflected on the surface 11a is detected by the reflected light amount detector 78.
削磨加工時,也與上述之改質層形成加工同樣地在晶圓11之任意分割預定線13、複數分割預定線13、或全部的分割預定線13照射反射光量檢測用雷射光束,檢測反射光量。 In the same manner as the above-described reforming layer forming process, the laser beam for detecting the amount of reflected light is irradiated onto the arbitrary dividing line 13 of the wafer 11, the predetermined dividing line 13 or all the dividing lines 13 to be detected. The amount of reflected light.
削磨加工時之雷射光束照射條件是如以下所設定。 The laser beam irradiation conditions during the sharpening process are set as follows.
光源:LD激化Q轉換 Nd:YVO4脈衝雷射 Light source: LD-induced Q conversion Nd: YVO4 pulse laser
波長:355nm(YV04脈衝雷射之第3高諧波 Wavelength: 355nm (the third harmonic of the YV04 pulsed laser)
重複頻率:200kHz Repeat frequency: 200kHz
平均輸出:0.1W Average output: 0.1W
加工進給速度:200mm/s Processing feed rate: 200mm/s
削磨加工中,實施反射光量檢測步驟後,實施雷射加工步驟,其是根據在反射光量檢測步驟檢測出之反射光量,設定在雷射光束照射單元34照射之雷射光束之輸出,以第2條件由雷射光束照射單元34之加工頭36在保持於工作夾台28之晶圓11之表面11a照射雷射光束,於晶圓11之分割預定線13施行削磨加工,形成雷射加工溝。 In the shaving processing, after the reflected light amount detecting step is performed, a laser processing step is performed in which the output of the laser beam irradiated by the laser beam irradiating unit 34 is set based on the amount of reflected light detected in the reflected light amount detecting step, The condition is that the processing head 36 of the laser beam irradiation unit 34 irradiates the laser beam on the surface 11a of the wafer 11 held on the working chuck 28, and performs a sharpening process on the dividing line 13 of the wafer 11 to form a laser processing. ditch.
在該削磨加工之雷射加工條件是如以下所設定。 The laser processing conditions in this sharpening process are set as follows.
光源:LD激化Q轉換 Nd:YVO4脈衝雷射 Light source: LD-induced Q conversion Nd: YVO4 pulse laser
波長:355nm(YVO4脈衝雷射之第3高諧波) Wavelength: 355nm (the third harmonic of the YVO4 pulsed laser)
重複頻率:200kHz Repeat frequency: 200kHz
平均輸出:1W Average output: 1W
加工進給速度:200mm/s Processing feed rate: 200mm/s
削膜加工時亦可依據晶圓11之表面11a之反射率及雷射振盪器64之最大功率在晶圓11之厚度方向改變聚光鏡74之聚光點,形成複數段之雷射加工溝。此時之段數是由儲存於ROM之段數算出構件80因應於在反射率檢測步驟檢測出之反射率而算出。 In the film cutting process, the condensing point of the condensing mirror 74 can be changed in the thickness direction of the wafer 11 according to the reflectance of the surface 11a of the wafer 11 and the maximum power of the laser oscillator 64 to form a plurality of laser processing grooves. The number of stages at this time is calculated by the number-of-segment calculation means 80 stored in the ROM in response to the reflectance detected in the reflectance detecting step.
本發明之雷射加工方法之第2實施形態中,亦可一面實施反射光量檢測步驟一面實施雷射加工步驟。即,如圖10所示,將工作夾台28朝箭頭記號X1方向進行加工進給,並且由雷射光束照射單元34之加工頭36照射雷射光束 69,使用反射光量檢測器78檢測在晶圓11之內面11b反射之反射光71之反射光量。 In the second embodiment of the laser processing method of the present invention, the laser processing step may be performed while performing the reflected light amount detecting step. That is, as shown in Fig. 10, the work chuck 28 is machined in the direction of the arrow mark X1, and the processing head 36 of the laser beam irradiation unit 34 irradiates the laser beam. 69. The reflected light amount detector 78 detects the amount of reflected light of the reflected light 71 reflected on the inner surface 11b of the wafer 11.
根據該反射光量,控制器40將輸出調整單元68進行反饋控制,利用根據反射光量之最適當的輸出之雷射光束69,於晶圓11之內部形成改質層19。 Based on the amount of reflected light, the controller 40 performs feedback control on the output adjustment unit 68, and forms the modified layer 19 inside the wafer 11 by using the laser beam 69 which is the most appropriate output of the amount of reflected light.
削磨加工時亦可因應於反射光量來控制輸出調整單元68,由加工頭36照射最適當之功率的雷射光束69,施行削磨加工。在晶圓11形成改質層19或雷射加工溝後,實施賦與外力於晶圓11而分割成各個晶片之分割步驟。 In the sharpening process, the output adjustment unit 68 can also be controlled in response to the amount of reflected light, and the laser beam 69 of the most appropriate power is irradiated by the processing head 36 to perform a sharpening process. After the modified layer 19 or the laser processing groove is formed on the wafer 11, a dividing step of applying an external force to the wafer 11 and dividing into individual wafers is performed.
本實施形態中,沿著全部的分割預定線13而於晶圓11之內部形成改質層19後,實施研磨晶圓11之內面11b之內面研磨步驟。在該內面研磨步驟中,是如圖11所示,以磨石94研磨保持在研磨裝置之工作夾台96之晶圓11之內面11b,並以研磨中之壓制力將晶圓11分割成各個晶片。 In the present embodiment, after the modified layer 19 is formed inside the wafer 11 along all the planned dividing lines 13, the inner surface polishing step of polishing the inner surface 11b of the wafer 11 is performed. In the inner surface polishing step, as shown in FIG. 11, the inner surface 11b of the wafer 11 of the working chuck 96 of the polishing apparatus is polished by the grindstone 94, and the wafer 11 is divided by the pressing force in the grinding. Into each wafer.
圖11中,研磨單元32是由旋轉軸84、固定於旋轉軸84之前端之輪座86、及以複數螺絲90可裝卸地裝固於輪座86之研磨輪83所構成。研磨輪83是將複數之磨石94固設於環狀基台92之下端部外周而構成。 In Fig. 11, the polishing unit 32 is composed of a rotary shaft 84, a wheel base 86 fixed to the front end of the rotary shaft 84, and a grinding wheel 83 detachably attached to the wheel base 86 by a plurality of screws 90. The grinding wheel 83 is configured by fixing a plurality of grindstones 94 to the outer periphery of the lower end portion of the annular base 92.
該內面研磨步驟中,是以例如300rpm使工作夾台96朝箭頭記號a方向旋轉,並且使研磨輪88朝箭頭記號b方向以例如6000rpm旋轉,並且使研磨單元傳送機構作動而使磨石94接觸於晶圓11之內面11b。 In the inner surface grinding step, the work chuck 96 is rotated in the direction of the arrow mark a at, for example, 300 rpm, and the grinding wheel 88 is rotated in the direction of the arrow mark b at, for example, 6000 rpm, and the grinding unit transport mechanism is actuated to cause the grindstone 94. Contact with the inner surface 11b of the wafer 11.
接著,研磨輪88一面以預定之研磨進給速度朝下方研磨進給,一面實施晶圓11之內面11b之研磨。以接觸式 或非接觸式之厚度規測定晶圓11之厚度,並且將晶圓11最後加工成所期望之厚度、例如50μm。 Next, the polishing wheel 88 is ground and fed downward at a predetermined polishing feed rate, and the inner surface 11b of the wafer 11 is polished. Contact type The thickness of the wafer 11 is determined by a non-contact thickness gauge, and the wafer 11 is finally processed to a desired thickness, for example, 50 μm.
該研磨之途中,由於在晶圓11之內部沿著分割預定線13而形成有改質層19,因此以研磨中之壓制力,以改質層19為分割起點而晶圓11分割成各個晶片。 In the middle of the polishing, since the reforming layer 19 is formed along the dividing line 13 inside the wafer 11, the wafer 11 is divided into individual wafers by using the reforming layer 19 as a dividing starting point by the pressing force during polishing. .
在此,若為分割性較低之被加工物時,在實施內面研磨前,實施將外力賦與被加工物而分割之分割步驟。或者,在實施內面研磨後,實施對被加工物賦與外力而分割之分割步驟。 Here, in the case of a workpiece having a low degree of division, a step of dividing the external force into the workpiece and dividing it is performed before the inner surface polishing is performed. Alternatively, after the inner surface polishing is performed, a dividing step of dividing the workpiece with an external force is performed.
上述之實施形態中,是於厚度較厚(700μm)之晶圓形成改質層19後,在研磨晶圓11之內面11b而使晶圓薄化的同時,藉由研磨時之壓制力以改質層19為分割起點而分割成各個晶片,但亦可預先於研磨內面11b而薄化之晶圓11,形成改質層19或雷射加工溝。又,亦可對晶圓11照射具有吸收性之波長之雷射光束而將晶圓11全切割。 In the above embodiment, after the modified layer 19 is formed on a wafer having a thick thickness (700 μm), the inner surface 11b of the wafer 11 is polished to thin the wafer, and the pressing force at the time of polishing is The modified layer 19 is divided into individual wafers by dividing the starting point, but the modified layer 19 or the laser processing groove may be formed by the wafer 11 which is thinned in advance on the polished inner surface 11b. Further, the wafer 11 may be irradiated with a laser beam having an absorptive wavelength to completely cut the wafer 11.
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
34‧‧‧雷射光束照射單元 34‧‧‧Laser beam irradiation unit
36‧‧‧加工頭 36‧‧‧Processing head
40‧‧‧控制器 40‧‧‧ Controller
62‧‧‧雷射振盪單元 62‧‧‧Laser oscillation unit
64‧‧‧雷射振盪器 64‧‧‧Laser oscillator
66‧‧‧重複頻率設定單元 66‧‧‧Repetition frequency setting unit
68‧‧‧輸出調整單元 68‧‧‧Output adjustment unit
69‧‧‧雷射光束 69‧‧‧Laser beam
70‧‧‧殼體 70‧‧‧shell
71‧‧‧反射光 71‧‧‧ Reflected light
72‧‧‧反射鏡 72‧‧‧Mirror
74‧‧‧聚光鏡 74‧‧‧Condenser
76‧‧‧半鏡 76‧‧‧Half mirror
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