CN103372720B - Laser processing device and laser processing - Google Patents

Laser processing device and laser processing Download PDF

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Publication number
CN103372720B
CN103372720B CN201310128509.XA CN201310128509A CN103372720B CN 103372720 B CN103372720 B CN 103372720B CN 201310128509 A CN201310128509 A CN 201310128509A CN 103372720 B CN103372720 B CN 103372720B
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China
Prior art keywords
laser
reflection light
machined
processing
wafer
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CN201310128509.XA
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Chinese (zh)
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CN103372720A (en
Inventor
生越信守
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株式会社迪思科
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Priority to JP2012102507A priority Critical patent/JP6425368B2/en
Priority to JP2012-102507 priority
Priority to JPJP2012-102507 priority
Application filed by 株式会社迪思科 filed Critical 株式会社迪思科
Publication of CN103372720A publication Critical patent/CN103372720A/en
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Publication of CN103372720B publication Critical patent/CN103372720B/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067Dividing the beam into multiple beams, e.g. multifocusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/0461Welding tables

Abstract

The present invention provides laser processing device and laser processing, and how the coplanar laser illumination state of its no matter machined object can implement uniform Laser Processing.The laser processing device that machined object is implemented Laser Processing is characterized by: chuck table, it keeps machined object;Laser beam irradiation component, it includes laser oscillator and processing head, and this processing head has collecting lens, and this collecting lens is assembled from this laser oscillator laser beam that vibrates;Reflection light quantity detection means, its detection is irradiated to the reflection light quantity of the laser beam of the machined object being held in this chuck table from this laser beam irradiation component;And output adjusts component, it, based on the reflection light quantity detected by this reflection light quantity detection means, adjusts the output of the laser beam that vibrates from this laser oscillator.

Description

Laser processing device and laser processing

Technical field

The present invention relates to laser processing device and the laser processing by the machined objects such as semiconductor wafer being implemented Laser Processing.

Background technology

Being formed the wafers such as the silicon wafer of multiple device such as IC, LSI, LED, sapphire wafer on surface by splitting preset lines division, be divided into device one by one by processing unit (plant), divided device is widely used in the various electronic equipment such as mobile phone, personal computer.

A kind of widely used cutting (dicing) method in the segmentation of wafer, this cutting method uses the topping machanism being referred to as cutting machine.In this cutting method, cut wafer while utilizing the cutting edge that the abrasive particle such as metal or resin fixed diamond and thickness are about 30 μm to rotate with the high speed of about 30000rpm, thus cut wafer, be divided into device chip one by one.

On the other hand, in recent years, develop and utilize laser beam wafer is divided into the method for device chip one by one and has used in practice.As the method utilizing laser beam that wafer is divided into device chip one by one, it is known to the first and second processing methods described below.

The method (referring for example to Japanese Patent the 3408805th) that first processing method is discussed further below: make the focus relative to wafer with the laser beam of the wavelength (such as 1064nm) of permeability be positioned at the inside of the wafer corresponding with segmentation preset lines, laser beam is made to irradiate along segmentation preset lines and form upgrading layer at inner wafer, then pass through segmenting device and wafer is applied external force, with upgrading layer for splitting starting point, wafer is divided into device chip one by one.

The method (referring for example to Japanese Unexamined Patent Publication 10-305420) that second processing method is discussed further below: the focus relative to wafer with the laser beam of absorbefacient wavelength (such as 355nm) is irradiated to the region corresponding with splitting preset lines, it is processed to form working groove by excising, then apply external force, with working groove for splitting starting point, wafer is divided into device chip one by one.

Compared with the cutting method utilizing cutting machine, utilize the processing method of laser beam can accelerate process velocity, and also be able to process relatively easily even for the wafer being made up of the high rigidity raw material such as sapphire or SiC.

In addition, the processing method utilizing laser beam has the advantage that owing to upgrading layer or working groove can be made such as the following narrow for example formed as 10 μm, therefore compare relative to the situation utilizing cutting method to be processed, by increasing capacitance it is possible to increase the device acquirement amount of every piece of wafer.

It addition, the back side remaining of the semiconductor wafer before implementing back side grinding by grinding attachment has oxide-film or nitride film.It is formed with the semiconductor wafer of Low-k film on surface additionally, also have or is formed with the wafer of metal film overleaf.

When implementing to laser machine with the machined object irradiating laser bundle of film to these, irradiate a part of tunicle reflection of the laser beam come.Reflectance is different according to the kind of film or thickness etc., and reflectance is different according to each machined object, even if in a machined object, reflectance there is also difference.

There is the wavelength of permeability when machined object is internally formed the first processing method of upgrading layer and utilization has, relative to machined object, the second processing method that machined object is implemented excision processing by absorbefacient wavelength when utilizing relative to machined object, if the reflectance of machined object is big, then the light quantity of the laser beam owing to passing through or absorb reduces, and is therefore also required to the output improving the laser beam irradiated to implement desired Laser Processing.

No. 3408805 publication of [patent documentation 1] Japanese Patent

[patent documentation 2] Japanese Unexamined Patent Publication 10-305420 publication

[patent documentation 3] Japanese Unexamined Patent Publication 2009-021476 publication

[patent documentation 4] Japanese Unexamined Patent Publication 2010-245172 publication

When reflectance according to each machined object different, when multiple machined objects being implemented Laser Processing with single processing conditions, there are the following problems: the degree of depth of the laser processing groove owing to being formed by the irradiation of laser beam between machined object produces difference, or the upgrading layer formed by the irradiation of laser beam produces difference.

In addition, if there are differences a machined object internal reflection rate, when implementing to laser machine with single processing conditions, there are the following problems: the difference according to region, the degree of depth of the laser processing groove formed by the irradiation of laser beam produces difference, or the upgrading layer formed by the irradiation of laser beam produces difference.

Summary of the invention

The present invention completes in view of the above fact, its object is to provide laser processing device as described below and laser processing: regardless of the coplanar laser illumination state of machined object, can both implement uniform Laser Processing.

Invention according to first aspect, it is provided that a kind of laser processing device, machined object is implemented Laser Processing by it, and this laser processing device is characterized by: chuck table, and it keeps machined object;Laser beam irradiation component, it includes laser oscillator and processing head, and this processing head has collecting lens, and this collecting lens is assembled from this laser oscillator laser beam that vibrates;Reflection light quantity detection means, its detection is irradiated to the reflection light quantity of the laser beam of the machined object being held in this chuck table from this laser beam irradiation component;Output adjusts component, and it, based on the reflection light quantity detected by this reflection light quantity detection means, adjusts the output of the laser beam that vibrates from this laser oscillator;And progression calculates component, it, based on the reflection light quantity detected by described reflection light quantity detection means, calculates the progression utilizing this laser beam irradiation component along the thickness direction enforcement multi-stage laser processing of machined object.

Invention according to second aspect, it is provided that a kind of laser processing, implements Laser Processing to machined object, and this laser processing is characterized by: keep step, utilizes chuck table to keep machined object;Laser beam irradiation step is used in reflection light quantity detection, with first condition from the laser beam irradiation component machined object irradiating laser bundle to being held in this chuck table;Reflection light quantity detecting step, the light quantity of the reflection light after the laser beam irradiated in this reflection light quantity detection laser beam irradiation step is reflected by machined object upper surface detects;Laser machining process, after implementing this reflection light quantity detecting step, based on the reflection light quantity detected in this reflection light quantity detecting step, set the output of the laser beam utilizing this laser beam irradiation component to irradiate, with second condition from this laser beam irradiation component machined object irradiating laser bundle to being held in this chuck table, machined object is implemented Laser Processing;And progression calculation procedure, in this progression calculation procedure, based on the reflection light quantity detected in described reflection light quantity detecting step, calculate the thickness direction along machined object and implement the progression that multi-stage laser is processed, in described laser machining process, based on the progression calculated in this progression calculation procedure, the thickness direction along machined object implements multi-stage laser processing.

The laser processing device of the present invention is owing to having the reflection light quantity detection means of the light quantity detecting the reflection light after being reflected by machined object upper surface and the output of laser beam is adjusted to based on the reflection light quantity detected the output adjustment component of the best, therefore regardless of the coplanar laser illumination state of machined object, uniform Laser Processing can both be implemented.

The laser processing of the present invention has: reflection light quantity detection laser beam irradiation step, the reflection light quantity detecting step of detection reflection light quantity, the output setting laser beam based on the reflection light quantity detected in reflection light quantity detecting step the laser machining process that machined object enforcement is laser machined, therefore regardless of the coplanar laser illumination state of machined object, machined object can both be implemented uniform Laser Processing.

Accompanying drawing explanation

Fig. 1 is the axonometric chart of laser processing device.

Fig. 2 is the block diagram of the optical system of laser beam irradiation unit.

Fig. 3 is the face side axonometric chart of semiconductor wafer.

Fig. 4 is the exploded perspective view illustrating the state that the face side of semiconductor wafer sticks to the splicing tape that peripheral part is installed on ring-shaped frame.

Fig. 5 is the partial side view in cross section illustrating and keeping step.

Fig. 6 is the partial side view in cross section illustrating reflection light quantity detection laser beam irradiation step.

Fig. 7 is the figure illustrating the mutual relation between the reflectance of machined object and suitable pulse energy.

Fig. 8 is the partial side view in cross section being shown in the laser machining process that inner wafer forms upgrading layer.

Fig. 9 illustrates the partial side view in cross section to the reflection light quantity detection laser beam irradiation step that surface side of wafer is implemented.

Figure 10 implements the partial side view in cross section of the embodiment of Laser Processing while of being and illustrate detection reflection light quantity.

Figure 11 is the axonometric chart illustrating back side grinding step.

Label declaration

11: semiconductor wafer

13: segmentation preset lines

15: device

17: oxide-film

19: upgrading layer

28: chuck table

34: laser beam irradiation unit

36: processing head

38: image unit

62: laser oscillation unit

64: laser oscillator

66: repetition rate setup unit

68: output adjustment unit

69: laser beam

71: reflection light

74: collecting lens

76: semi-transparent semi-reflecting lens

78: reflection light quantity detector

Detailed description of the invention

Hereinafter, the embodiment that present invention will be described in detail with reference to the accompanying.With reference to Fig. 1, it is shown that the stereoscopic figure of the laser processing device that embodiment of the present invention relates to.Laser processing device 2 includes the first slide block 6, and this first slide block 6 can be equipped in stationary base 4 in the X-axis direction movably.

First slide block 6 is moved along pair of guide rails 14 by the processing feeding component 12 being made up of ball-screw 8 and impulse motor 10 in processing direction of feed and X-direction.

Second slide block 16 can be equipped on the first slide block 6 in the Y-axis direction movably.That is, the second slide block 16 is moved along pair of guide rails 24 by the index feed component 22 being made up of ball-screw 18 and impulse motor 20 on index feed direction and Y direction.

Supporting parts 26 via cylinder on the second slide block 16 and be equipped with chuck table 28, chuck table 28 can move by processing feed unit 12 and index feed unit 22 in X-direction and Y direction.Chuck table 28 is provided with for absorption is held in the clamp 30 that the semiconductor wafer of chuck table 28 is clamped.

Erect in stationary base 4 and be provided with post 32, this post 32 is provided with laser beam irradiation unit 34.Laser beam irradiation unit 34 includes being incorporated in the laser oscillation unit 62 shown in the Fig. 2 in housing 35 and being installed on the processing head 36 of housing 35 front end.

As in figure 2 it is shown, laser oscillation unit 62 includes: the laser oscillator 64 of vibrate YAG laser or YVO4 laser;And repetition rate setup unit 66.Although not illustrating especially, laser oscillator 64 has Brewster window, is the laser beam of linear polarization from the laser beam of laser oscillator 64 outgoing.

Being configured with image unit 38 in the leading section of housing 35, this image unit 38 detects, with processing head 36, the machining area that carry out laser machining in the X-axis direction side by side.Image unit 38 includes the imaging apparatuss such as the common CCD of the machining area by visible ray shooting semiconductor wafer.

Image unit 38 also includes: irradiate ultrared infrared ray radiation component to semiconductor wafer;Catch the ultrared optical system irradiated by infrared ray radiation component;And infrared pick-up component, the infrared imaging element such as infrared C CD of its electric signal corresponding by the infrared ray exported with captured by this optical system is constituted, and the picture signal photographed is sent to controller (control member) 40.

Controller 40 is made up of personal computer, has: carry out the central processor (CPU) 42 of calculation process according to control program;The read only memory (ROM) 44 of storage control program etc.;The read-write random access memory (RAM) 46 of storage operation result etc.;Enumerator 48;Input interface 50;With output interface 52.

Label 56 is by the linear scale 54 configured along guide rail 14 and is configured at the processing amount of feeding detection means that the not shown read head of the first slide block 6 is constituted, and the detection signal of processing amount of feeding detection means 56 is input to the input interface 50 of controller 40.

Label 60 is by the linear scale 58 configured along guide rail 24 and is configured at the index feed amount detection means that the not shown read head of the second slide block 16 is constituted, and the detection signal of index feed amount detection means 60 is input to the input interface 50 of controller 40.

The picture signal that image unit 38 photographs also enters into the input interface 50 of controller 40.On the other hand, from the output interface 52 of controller 40 to impulse motor 10, the output control signal such as impulse motor 20, laser beam irradiation unit 34.

With reference to Fig. 2, it is shown that the optical system of the laser beam irradiation unit 34 that embodiment of the present invention relates to.Reflecting mirror 72 and collecting lens 74 it is accommodated with in the housing 70 of processing head 36.It addition, be configured with semi-transparent semi-reflecting lens (beam splitter) 76 between reflecting mirror 72 and collecting lens 74.

Vibrate from laser beam unit 62 and be adjusted to the laser beam 69 of predetermined power by output adjustment unit 68 further, the reflecting mirror 72 of processed 36 reflects, and one part is through semi-transparent semi-reflecting lens 76 and is irradiated to the wafer 11 as machined object by collecting lens 74.

Being assembled by collecting lens 74 by the reflection light 71 of wafer 11 upper surface reflection, one part is reflected by semi-transparent semi-reflecting lens 76, and the reflection light quantity detector 78 being made up of photo detectors such as light emitting diodes detects reflection light quantity.Based on this reflection light quantity, controller 40 controls laser beam unit 62 and output adjustment unit 68 as will be described in detail.

Semi-transparent semi-reflecting lens 76 can also be arranged between collecting lens 74 and machined object (wafer) 11, but semi-transparent semi-reflecting lens 76 is arranged in this configuration of the upstream side of collecting lens 74, only semi-transparent semi-reflecting lens 76 can be assembled and incided to the reflection light reflected by the upper surface of wafer 11 by collecting lens 74, therefore preferred this configuration in detection reflection light quantity.

With reference to Fig. 3, it is shown that as the face side axonometric chart of semiconductor wafer 11 of one of the machined object of laser processing of the present invention.Semiconductor wafer 11 is such as made up of the silicon wafer that thickness is 700 μm, is that clathrate is formed with multiple segmentation preset lines 13 at surface 11a, and is respectively formed with the devices such as IC, LSI 15 in each region marked off by multiple segmentation preset lines 13.As shown in Figure 4, the oxide-film 17 being made up of SiO2 it is formed with at the back side 11b of semiconductor wafer 11.

Machined object in the laser processing of the present invention is not limited to the semiconductor wafer 11 shown in Fig. 3, is additionally included in surface or the back side has the machined object of the films such as oxide-film, nitride film, metal film, Low-k film.

When implementing the laser processing of the present invention, as shown in Figure 4, the 11a side, surface of semiconductor wafer 11 adheres to splicing tape T, and the peripheral part of this splicing tape T is installed on ring-shaped frame F, and the back side 11b of semiconductor wafer 11 becomes upside.

So, as it is shown in figure 5, the chuck table 28 of laser processing device 2 semiconductor wafer 11 via splicing tape T attracting holding, ring-shaped frame F clamped 30 is fixedly clamped.

Then, as shown in Figure 6, following reflection light quantity detection laser beam irradiation step is implemented: from the processing head 36 of laser beam irradiation unit 34 with the first condition wafer 11 irradiating laser bundle 69 to being held in chuck table 28.

Before this reflection light quantity detection of enforcement is by laser beam irradiation step, the calibration of the segmentation preset lines 13 that examinations should laser machine.In other words, the infrared camera utilizing image unit 38 shoots wafer 11 from 11b side, the back side, utilizes the image procossing such as the pattern match being widely known by the people to detect the segmentation preset lines 13 extended in a first direction and the segmentation preset lines 13 extended in the second direction orthogonal with first direction.

Alternatively, it is also possible to formed the holding surface of chuck table 28 by transparent component, by the photographing unit shooting wafer 11 being arranged in below chuck table 28, calibration is implemented.

It addition, the present invention, before the reflection light quantity of detection wafer 11, prepares one or more benchmark workpiece with known reflectivity in advance, utilizes benchmark workpiece sensing reflection light quantity, with reflection light quantity now for benchmark data, be stored in the RAM46 of controller 40.

In this reflection light quantity detection with in laser beam irradiation step, as shown in Figure 6, while making chuck table 28 be processed feeding along arrow X1 direction, the back side 11b irradiating laser bundle 69 from processing head 36 to the wafer 11 being formed with oxide-film 17, utilize reflection light quantity detector 78 to detect its reflection light 71.

Such as, irradiate reflection light quantity detection laser beam to the arbitrarily segmentation preset lines 13 of wafer 11, multiple segmentation preset lines 13 or all segmentation preset lines 13, detect reflection light quantity.

Irradiate when wafer 11 is internally formed upgrading layer that the irradiation condition of reflection light quantity detection laser beam is such as described below by laser beam 69.

Light source: LD encourages Q-switch Nd:YVO4 pulse laser

Wavelength: 1064nm

Repetition rate: 100kHz

Average output: 0.1W

Processing feed speed: 400mm/s

In reflection light quantity detection with in laser beam irradiation step, when to the back side 11b irradiating laser bundle 69 of wafer 11, the reflection light 71 of the back side 11b reflection being formed with oxide-film 17 is assembled by the collecting lens 74 shown in Fig. 2, one part is reflected by semi-transparent semi-reflecting lens 76 and incides the reflection light quantity detector 78 being made up of photo detector, detects the reflection light quantity reflected by the back side 11b of wafer 11.Reflection light quantity according to the known benchmark workpiece of the reflection light quantity detected and the reflectance that is stored in RAM46 calculates the reflectance of the back side 11b of wafer 11.

ROM44 storage at controller 40 has multiple relevant figure as shown in Figure 7, and this relevant legend is as represented each kind for machined object and each film kind, the dependency relation 73 between reflectance and suitable pulse energy.Thus, the pulse energy suitable relative to its reflectance can be obtained according to these relevant figure.

Based on suitable pulse energy, the average output of the laser beam that adjusting vibrates from laser oscillator 64 and repetition rate.Such as, the relevant figure when reflectance is 50%, according to Fig. 7, it is determined that suitable pulse energy is 20uJ.Thus, according to pulse energy (J)=average output (W)/repetition rate (Hz), for instance be set as that repetition rate is 100Hz, be on average output as 2W.

According to reflectance, the peak power of laser oscillator 64 is insufficient, therefore can not be internally formed sufficient upgrading layer at wafer 11 by the irradiation of primary laser beam.Thus, based on the reflection light quantity detected at reflection light quantity detecting step, the thickness direction along wafer 11 forms multistage upgrading layer.The progression calculating component calculating necessary progression based on reflection light quantity is stored in the ROM44 of controller 40.

Following laser machining process is implemented: set the output of the laser beam utilizing laser beam irradiation unit 34 to irradiate based on the reflection light quantity detected at reflection light quantity detecting step after implementing reflection light quantity detection, from the processing head 36 of laser beam irradiation unit 34 with second condition to the wafer 11 irradiating laser bundle being held in chuck table 28, it is internally formed upgrading layer 19 at wafer 11.

As shown in Figure 8, in this laser machining process, while making chuck table 28 be processed feeding along arrow X1 direction, from the processing head 36 of laser beam irradiation unit 34 with second condition irradiating laser bundle 69, it is internally formed upgrading layer 19 at wafer 11.

While making chuck table 28 index feed in the Y-axis direction, gradually form same upgrading layer 19 in the inside of wafer 11 along the segmentation preset lines 13 extended in a first direction.Then, after making chuck table 28 90-degree rotation, same upgrading layer 19 is formed along the segmentation preset lines 13 extended in a second direction.

When causing that the property split is low due to the thickness of wafer 11 and material, form multistage upgrading layer 19 at inner wafer.Additionally, the peak power high, laser beam device 64 of the reflectance at wafer 11 is too low, utilize primary laser beam irradiation can not at wafer 11 when being internally formed sufficient upgrading layer 19, be internally formed multistage upgrading layer 19 at wafer 11.

Laser processing condition in this upgrading layer forming step such as sets as follows.

Light source: LD encourages Q-switch Nd:YVO4 pulse laser

Wavelength: 1064nm

Repetition rate: 100kHz

Average output: 2.0W

Processing feed speed: 400mm/s

With reference to Fig. 9, it is shown that illustrate wafer 11 is implemented the partial side view in cross section that excision adds the reflection light quantity detection laser beam irradiation step in man-hour.Such as, the Low-k film formed of the surface 11a at wafer 11 being implemented excision and adds man-hour, laser beam 69 incides the 11a side, surface of wafer 11.And, reflection light quantity detector 78 detect the light quantity of the reflection light 71 reflected by surface 11a.

Add man-hour in excision also same with above-mentioned upgrading layer formation processing, the arbitrarily segmentation preset lines 13 of wafer 11, multiple segmentation preset lines 13 or all segmentation preset lines 13 are irradiated reflection light quantity detection laser beam, detects reflection light quantity.

Excision adds the laser beam irradiation condition in man-hour and such as sets as follows.

Light source: LD encourages Q-switch Nd:YVO4 pulse laser

Wavelength: 355nm (third harmonic of YVO4 pulse laser)

Repetition rate: 200kHz

Average output: 0.1W

Processing feed speed: 200mm/s

In excision processing, laser machining process is implemented after having implemented reflection light quantity detecting step, this laser machining process is: based on the reflection light quantity detected at reflection light quantity detecting step, set the output of the laser beam utilizing laser beam irradiation unit 34 to irradiate, from the processing head 36 of laser beam irradiation unit 34 with second condition to the surface 11a irradiating laser bundle of the wafer 11 being held in chuck table 28, the segmentation preset lines 13 of wafer 11 is implemented excision processing and formed laser processing groove.

Laser processing condition in this excision processing such as sets as follows.

Light source: LD encourages Q-switch Nd:YVO4 pulse laser

Wavelength: 355nm (third harmonic of YVO4 pulse laser)

Repetition rate: 200kHz

Average output: 1W

Processing feed speed: 200mm/s

Due to the peak power of the reflectance of surface 11a of wafer 11 and laser oscillator 64, when carrying out excision processing, the focus of collecting lens 74 is also made change at the thickness direction of wafer 11, formation multi-stage laser working groove.Progression now, is stored in the progression in ROM and calculates what component was calculated according to the reflectance that reflectance detecting step detects.

In second embodiment of the laser processing of the present invention, it is also possible to implement laser machining process while implementing reflection light quantity detecting step.Namely, as shown in Figure 10, from the processing head 36 irradiating laser bundle 69 of laser beam irradiation unit 34 while making chuck table 28 be processed feeding along arrow X1 direction, reflection light quantity detector 78 detect the reflection light quantity of the reflection light 71 reflected by the back side 11b of wafer 11.

Based on this reflection light quantity, controller 40 makes output adjustment unit 68 carry out feedback control, utilizes the laser beam 69 of the best output based on reflection light quantity to be internally formed upgrading layer 19 at wafer 11.

Even if when excision processing, it is also possible to control output adjustment unit 68 according to reflection light quantity, implementing excision processing irradiate the laser beam 69 of best power from processing head 36 while.Form upgrading layer 19 or laser processing groove at wafer 11 after, implement wafer 11 is applied external force and makes it be divided into the segmentation step of chip one by one.

In the present embodiment, along all segmentation preset lines 13 wafer 11 be internally formed upgrading layer 19 after, implement the back side grinding step of back side 11b of grinding wafer 11.As shown in figure 11, in this back side grinding step, utilize grinding grinding stone 94 that the back side 11b of the wafer 11 that the chuck table 96 of grinding attachment keeps is carried out grinding, utilize and wafer 11 is divided into chip one by one by pressure by grinding.

In fig. 11, grinding unit 82 is made up of such as lower part: main shaft 84, is fixed on the emery wheel installed part 86 of main shaft 84 front end, is releasably installed on the grinding emery wheel 88 of emery wheel installed part 86 by multiple screws 90.Grinding emery wheel 88 is to fix multiple grinding grinding stone 94 in the periphery, bottom of ring-type pedestal 92.

In this back side grinding step, while making chuck table 96 rotate along arrow a direction with such as 300rpm, make grinding emery wheel 88 rotate with such as 6000rpm along arrow b direction, and make grinding unit feed mechanism action, make grinding grinding stone 94 contact the back side 11b of wafer 11.

And, make grinding emery wheel 88 carry out downwards implementing while grinding and feeding the grinding of the back side 11b of wafer 11 with predetermined grinding and feeding speed.Utilize contact or contactless thickness measurement meter to measure the thickness of wafer 11, and be desired thickness by wafer 11 polish, for instance 50 μm.

In the midway of grinding, due to the inside of wafer 11 along segmentation preset lines 13 be formed with upgrading layer 19, hence with in grinding by pressure with upgrading layer 19 for split starting point wafer 11 is divided into chip one by one.

Here, when the machined object that segmentation property is low, implemented machined object is applied the segmentation step that external force is split before implementing back side grinding.Or, implement machined object is applied the segmentation step that external force is split after implementing back side grinding.

In the above-described embodiment, after the wafer of thickness thicker (700 μm) forms upgrading layer 19, the back side 11b of grinding wafer 11 make wafer thinning while by grinding time for segmentation starting point, wafer is divided into chip one by one with upgrading layer 19 by pressure but it also may grinding back side 11b form upgrading layer 19 or laser processing groove at thinning wafer 11 in advance.Further, it is also possible to wafer 11 irradiates the laser beam with absorbefacient wavelength, wafer 11 is made entirely to cut.

Claims (2)

1. a laser processing device, machined object is implemented Laser Processing by it,
This laser processing device is characterized by:
Chuck table, it keeps machined object;
Laser beam irradiation component, it includes laser oscillator and processing head, and this processing head has collecting lens, and this collecting lens is assembled from this laser oscillator laser beam that vibrates;
Reflection light quantity detection means, its detection is irradiated to the reflection light quantity of the laser beam of the machined object being held in this chuck table from this laser beam irradiation component;
Output adjusts component, and it, based on the reflection light quantity detected by this reflection light quantity detection means, adjusts the output of the laser beam that vibrates from this laser oscillator;And
Progression calculates component, and it, based on the reflection light quantity detected by described reflection light quantity detection means, calculates the progression utilizing this laser beam irradiation component along the thickness direction enforcement multi-stage laser processing of machined object.
2. a laser processing, implements Laser Processing to machined object,
This laser processing is characterized by:
Keep step, utilize chuck table to keep machined object;
Laser beam irradiation step is used in reflection light quantity detection, with first condition from the laser beam irradiation component machined object irradiating laser bundle to being held in this chuck table;
Reflection light quantity detecting step, the reflection light quantity of the reflection light after the laser beam being irradiated to machined object in this reflection light quantity detection laser beam irradiation step is reflected by machined object upper surface detects;
Laser machining process, after implementing this reflection light quantity detecting step, based on the reflection light quantity detected in this reflection light quantity detecting step, set the output of the laser beam utilizing this laser beam irradiation component to irradiate, with second condition from this laser beam irradiation component machined object irradiating laser bundle to being held in this chuck table, machined object is implemented Laser Processing;And
Progression calculation procedure, in this progression calculation procedure, based on the reflection light quantity detected in described reflection light quantity detecting step, calculates the thickness direction along machined object and implements the progression that multi-stage laser is processed,
In described laser machining process, based on the progression calculated in this progression calculation procedure, the thickness direction along machined object implements multi-stage laser processing.
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