TWI584504B - Led device - Google Patents

Description

Light-emitting diode device

The present invention relates to light emitting diodes, and more particularly to light emitting diode devices having a larger light exit angle.

Light Emitting Diode (LED) is a kind of semiconductor component with small size, power saving and long life. It has been widely used in indicators, backlights of display devices and lighting devices. A general LED manufacturing process includes: forming an epitaxial Wafer; processing the epitaxial wafer into die grains; and packaging the die into a light emitting diode unit, and then the light emitting diode The body unit can be secured to the system board for subsequent use. If the above process is a wire bonding (LED Bonding) light-emitting diode unit process or the like, when the die is packaged, the substrate of the die is subjected to a die bonding technique (for example, silver glue solid crystal or eutectic soldering). Directly disposed on a substrate (such as a heat sink); if the process is a Flip Chip type LED device or a similar process, when the die is packaged, the electrode of the die (ie, the light emitting diode) The positive electrode (P pole) and the negative electrode (N pole) of the body are directly placed on the substrate by a die bonding technique.

According to the above description, regardless of the wire-type or flip-chip light-emitting diode unit, the crystal grains are directly disposed on the substrate, so that the portion of the light emitted by the crystal grains that advances toward the substrate after being energized (or The portion that advances in the direction below the plane of the substrate cannot effectively diverge outward to increase the angle of light exiting.

It is an object of the present invention to provide a light emitting diode device that can improve the prior art.

The invention discloses a light-emitting diode device, which has a larger light-emitting angle than the prior art. One embodiment of the light-emitting diode device comprises: a substrate comprising two substrate edges for jointly defining the width of the substrate; a plurality of through holes for connecting one of the first surface and the second surface of the substrate, comprising a first through hole and a second through hole, wherein the first and second through holes have a conductive material; An element, located on a first side of the substrate, includes a first component edge and a second component edge, the first and second component edges collectively defining a width of the elevated component; a light emitting diode die is located The upper component includes a first electrode and a second electrode, and a first die edge and a second die edge. The first and second die edges jointly define the LED die Width, the width direction of the light-emitting diode die is parallel to the width of the height member, and the width of the light-emitting diode die is not less than the width of the height member; a reflective surface is located on the substrate On one side and/or on the plurality of through holes, The light from the light emitting diode die is reflected; and a plurality of electrical conductors are electrically connected to electrically connect the first electrode and the first through hole and electrically connect the second electrode and the second through hole Conductive material. The height of the above elevated members is between 500 microns and 3 microns.

Another embodiment of the light emitting diode device includes a substrate including a first conductive portion and a second conductive portion, the first conductive portion including two first conductive portion edges for defining the first conductive portion Width; at least a uniform hole for electrically isolating the first and second conductive portions, the at least one of the holes has a non-conductive material; a high element is located on the first conductive portion, including a first component edge and a a second component edge, the first and second component edges jointly define a width of the height component; a light emitting diode die is disposed on the shelf component, and includes a first electrode and a second electrode and a first a grain edge and a second grain edge, the first and second die edges jointly defining a width of the light emitting diode die, a width direction of the light emitting diode die and a width of the height member Parallel, and the width of the light-emitting diode die is not less than the width of the elevated component; a reflective surface is located on the substrate and/or the at least consistent hole for reflecting the die from the light-emitting diode Light; and a plurality of electrical conductors, The first electrode is electrically connected to the first conductive portion or the third conductive portion of the substrate, and is electrically connected to the second electrode and the second conductive portion. The height of the above elevated members is between 500 microns and 3 microns.

A further embodiment of the light emitting diode device includes: a substrate including a first conductive portion and a second conductive portion, the first conductive portion including two first conductive portion edges for defining the first conductive portion Width, the second conductive portion includes two second conductive portion edges for defining the width of the second conductive portion; at least a uniform hole for electrically isolating the first and second conductive portions, the at least one of the consistent holes being non-conductive At least one high component having at least one outer edge and at least one inner edge for defining a high component width; a light emitting diode die on the at least one high component including a first electrode and a second electrode and a first die edge and a second die edge, the first and second die edges jointly defining a width of the LED die, and a width direction of the LED die Parallel to the width of the elevated component, the width of the LED die is greater than the width of the elevated component; and a reflective surface on the substrate and/or the at least consistent aperture for reflecting from the LED Body grain light . The first electrode is electrically connected to the first conductive portion via a portion of the at least one high component or a first conductive body, and the second electrode is electrically connected to another portion of the at least one high component or a second electrical conductor Connecting the second conductive portion, the first and second electrodes are not electrically connected via the at least one high component, and the effective light-emitting angle of the light-emitting diode is not less than 150 degrees.

The features, implementations, and utilities of the present invention are described in detail with reference to the preferred embodiments.

The following descriptions of the content are based on the idioms in the technical field, and some of the terms are explained or defined in the specification, and the explanation of the terms is based on the description or definition of the specification. In addition, the relative relationship between the objects described in this specification may include direct or indirect relationships, and the term "indirect" refers to the existence of intermediates or physical spaces between objects.

The disclosure of the present invention includes a Light Emitting Diode (LED) device having a larger exit angle than the prior art. Some of the components of the light-emitting diode device may be known components alone, and the following description will abbreviate the details of known components without affecting the full disclosure and implementability of the device. In addition, the implementation of the present invention may selectively implement some or all of the technical features of any of the following embodiments in accordance with the disclosure of the present invention and its own needs, or may be selectively implemented. A combination of some or all of the technical features of a plurality of embodiments, thereby increasing the flexibility of the practice of the present invention.

Please refer to FIG. 1 , which is a schematic diagram of an embodiment of a light emitting diode device of the present invention. The present embodiment can be applied to an electrode-up type (eg, wire-bonding) LED package technology. As shown in FIG. 1 , the LED device 100 includes: a substrate 110; a plurality of through holes 120; an Elevated Element 130; a light emitting diode die 140; a reflective surface 150; The conductor 160; and a package material (such as Silicone, Epoxy, a resin-containing composite, or other non-conductive material, may include a light-converting substance (a substance that can be excited by light) or Equivalent; the package edge 170 is indicated by a long dashed line. The components used to cover the substrate 110 of FIG. 1 include the LED die 140, the conductor 160, the elevated component 130, the reflective surface 150, the via 120, and the like. The substrate 110 is a non-conductive substrate (such as a ceramic substrate or the like, on which a circuit or a coating layer may be disposed), and may be used to provide heat dissipation or other functions according to the needs of the implementer, including a first substrate edge 112 and A second substrate edge 114 is used to collectively define the width of the substrate 110. The plurality of through holes 120 are configured to communicate with the first surface and the second surface of the substrate 110, and include a first through hole and a second through hole, and the first and second through holes have a conductive material therein ( For example, metal materials can be used to electrically connect an external circuit (such as a system board) or provide other functions as required by the implementer. The upper member 130 is disposed on the first surface of the substrate 110 for increasing the vertical distance between the LED die 140 and the substrate 110, and includes a first component edge 132 and a second component edge 134. The first and second component edges 132, 134 together define the width of the elevated component 130. In addition, the height of the elevated component 130 is between 500 micrometers and 3 micrometers in this embodiment, which is too high. The value may cause an increase in cost or structural instability. If the value is too low, it is difficult to increase the effective light-emitting angle of the light-emitting diode device 100. Furthermore, the length, shape and material of the elevated member 130 are implemented as possible. Without limitation, for example, the length of the elevated member 130 may be less than, equal to, or greater than the width of the elevated member 130; the shape of the elevated member 130 may be a rectangle, a regular polygon, or an irregular polygon; the material of the elevated member 130 It can be made of conductive materials (such as metal, conductive plastics, etc.), heat-dissipating materials (such as metal, ceramics, thermal plastics, etc.) or other materials that provide stable heightening. The light emitting diode die 140 is located on the elevated component 130 and includes a first electrode 142 and a second electrode 144 and a first die edge 146 and a second die edge 148. The second die edge 146, 148 collectively defines the width of the LED die 140. The width of the LED die 140 is parallel to the width of the aforementioned elevated component 130, and the LED is crystallized. The width of the granule 140 is not less than the width of the elevated element 130, whereby the portion of the light emitted by the illuminating diode die 140 that is advanced toward the substrate 110 (or the direction below the plane of the substrate 110) The portion can be effectively diverged outwardly by the action of the light-converting material in the reflective surface 150 and/or the encapsulating material to increase the light-emitting angle. The light in the portion is not effectively dissipated outward in the prior art, which is wasteful. The light emitting diode die 140 further includes a substrate 149 (eg, a sapphire substrate, a germanium substrate, etc.) on the elevated component 130. The reflective surface 150 is located on the first surface of the substrate 110 for reflecting light from the LED die 130. The reflective surface 150 may be a part of the substrate 110 (ie, the surface of the substrate 110 is The reflective surface 150 is formed on the substrate 110, and a portion of the reflective surface 150 may be located between the elevated component 130 and the substrate 110. In an alternative embodiment of the present invention, the elevated component 130 may not The reflecting surface 150 is directly disposed on the substrate 110), and the material of the reflecting surface 150 (for example, metal, non-metal or mixed material), the number of layers (for example, single layer or multilayer) and the structure (for example, smooth or rough surface) There are no special restrictions on the implementation as possible. The plurality of electrical conductors 160 are, for example, a bonding wire or a metal wiring (Metal Wiring) or the like, for electrically connecting the first electrode 142 of the LED die 140 and the first via hole. And electrically connecting the second electrode 144 of the LED die 140 and the conductive material of the second through hole.

In addition to the above technical features, the embodiment may further include at least one of the following features: (1) As shown in FIG. 2, the plurality of through holes 120 further include a third through hole, and the third through hole is located in the frame. Below the high element 130, there is a heat sink, a conductive material or other material for assisting the light emitting diode die 140 to perform heat dissipation, conduction or other functions via the height member 130. (2) A plurality of conductive pads (not shown) are used to cover the plurality of through holes of the conductive material of FIG. 1 to facilitate electrical connection. (3) As shown in FIG. 3, the LED device 100 further includes a first combination body 310 between the elevated component 130 and the LED die 140 and/or a second combination 320. Located between the elevated component 130 and the substrate 110. The material of each of the first and second combined bodies 310, 320 is, for example, a rubber material having at least one of a fixed, conductive and transparent effect, such as a solid glue, a conductive paste or a transparent glue. (4) The width ratio of the elevated component 130 of FIG. 1 to the LED die 140 is between 5% and 100%. (5) The width of the elevated member 130 of FIG. 1 is parallel to the width of the substrate 110, and the width ratio of the two is between 5% and 100%. (6) As shown in FIG. 4, the effective light-emitting angle of the light-emitting diode device 100 is greater than 130 degrees and not greater than 180 degrees, wherein the effective light-emitting angle is one-half of the maximum luminous intensity of a light-emitting diode device. The angle formed by the position (for example, the position of the concentric circle symbol 410 in FIG. 4, which varies with the condition of the LED device, which can be known by measurement) (for example, the angle formed by the dotted line of FIG. 4) definition. In general, the prior art wire-wound (or electrode-up package) light-emitting diode device has an effective light-emitting angle of less than 120 degrees.

Please refer to FIG. 5 , which is a schematic diagram of another embodiment of the LED device of the present invention. The embodiment is also applicable to an LED-type (eg, wire-bonded) LED package technology. As shown in FIG. 5, the LED device 500 includes a substrate including a first conductive portion 512 and a second conductive portion 514; at least a uniform hole 520; a high element 530; and a light emitting diode die 540. a reflective surface 550; a plurality of electrical conductors 560; and a packaging material (eg, enamel resin, epoxy resin, composite containing resin, or other non-conductive material, which may include a light-converting substance (a substance that can be excited by light) Or equivalent; the package edge 570 is indicated by a long dashed line. The component used to cover the substrate of FIG. 5 includes first and second conductive portions 512, 514, an electrical conductor 560, a raised component 530, a reflective surface 550, and a Hole 520 and so on. The first conductive portion 512 includes two first conductive portion edges 5122 for defining the width of the first conductive portion 512. The at least one of the holes 520 has a non-conductive material for electrically isolating the first conductive portion 512 and the second conductive portion 514. The elevated member 530 is located on the first conductive portion 512 and includes a first component edge 532 and a second component edge 534. The first and second component edges 532, 534 together define the width of the elevated component 530. In addition, the height of the elevated member 530 is between 500 micrometers and 3 micrometers. The light emitting diode die 540 is located on the elevated component 530, and includes a first electrode 542 and a second electrode 544, and a first die edge 546 and a second die edge 548. The second die edge 546, 548 collectively defines the width of the LED die 540. The width of the LED die 540 is parallel to the width of the elevated component 530, and the LED is crystallized. The width of the granules 540 is not less than the width of the elevated member 530. In this embodiment, the LED 540 further includes a substrate 549 (eg, a sapphire substrate, a ruthenium substrate, etc.) on the elevated member 530. The reflective surface 550 is located on the substrate and/or the at least consistent aperture 520 for reflecting light from the LED 540. The reflective surface 550 can be part of the substrate (ie, the surface of the substrate) Or the reflective surface 550) is formed on the substrate, wherein a portion of the reflective surface 550 can be located between the elevated element 530 and the substrate (in an alternative embodiment of the invention, the elevated element 530 does not pass through the The reflective surface 550 is disposed directly on the substrate; in yet another alternative embodiment of the invention, the reflective surface 550 is non-conductive and covers the at least consistent aperture 520). The plurality of electrical conductors 560 are electrically connected to the first electrode 542 and the first conductive portion 512 or electrically connected to the first electrode 542 and one of the third conductive portions 516 of the substrate (as shown in FIG. 6 , One of the plurality of through holes 520 is used to electrically isolate the first conductive portion 512 from the third conductive portion 516) and to electrically connect the second electrode 544 and the second conductive portion 514.

Those skilled in the art can reasonably apply the embodiment of FIG. 1 and its subordinate technical features (eg, the technical features contained in the description of paragraphs [0012] to [0013]) in this embodiment in accordance with the disclosure of the present specification. Therefore, the description of repetition and redundancy is abbreviated here.

Please refer to FIG. 7 , which is a schematic diagram of still another embodiment of the LED device of the present invention. The embodiment can be applied to an LED down-type (eg, flip-chip) LED package technology. As shown in FIG. 7, the LED device 700 includes: a substrate including a first conductive portion 712 and a second conductive portion 714; at least a consistent hole 720; at least one high component (in this case, the at least one high The component includes a first elevated component 732 and a second elevated component 734); a light emitting diode die 740; a reflective surface 750; and a package (eg, resin, epoxy, resin-containing composite) Or other non-conductive material, which may include a light-converting substance (a substance that can be excited by light) or its equivalent; the edge 770 of the package is indicated by a long dashed line). The element on the substrate used to cover FIG. 7 contains the first and the Two conductive portions 712, 714, elevated members 732, 734, a reflecting surface 750, a through hole 720, and the like. The first conductive portion 712 includes two first conductive portion edges 7122 for defining the width of the first conductive portion 712, and the second conductive portion 714 includes two second conductive portion edges 7142 for defining the second conductive portion. 714 width. The at least consistent holes 720 are used to electrically isolate the first and second conductive portions 712, 714, and the at least consistent holes 720 have non-conductive materials. The first and second elevated members 732, 734 are respectively located on the first and second conductive portions 712, 714. The first elevated member 732 has a first outer edge 7322 and a first inner edge 7324. To define a first width, the second elevated member 734 has a second outer edge 7342 and a second inner edge 7344 for defining a second width, wherein the distance between the first and second inner edges 7324, 7344 Shorter than the distance of any other edge. The LED 740 is located on the first and second elevated elements 732, 734, and includes a first electrode 742 and a second electrode 744, and a first die edge 746 and a second die. The edge 748, the first and second electrodes 742, 744 may be transparent or opaque electrodes, and the first and second die edges 746, 748 together define the width of the LED die 740, the LED The width of the bulk die 740 is parallel to the first and second widths of the elevated elements 732, 734. The width of the LED die 740 is greater than the first and second widths, and the height of the elevated component 732 At least a portion of an outer edge 7322 (eg, a portion of the cross-section shown in FIG. 7) and at least a portion of the second outer edge 7342 of the elevated member 734 (eg, a portion of the cross-section shown in FIG. 7) are located in the first Between the second die edges 746, 748. The reflective surface 750 is located on the substrate 710 and/or the at least consistent aperture 720 for reflecting light from the LED 740 of the LED. In addition, the first electrode 742 is electrically connected to the first conductive portion 712 via the first elevated member 732 or a first electrical conductor (eg, a metal slug or alloy, not shown), the second electrode 744 Electrically connecting the second conductive portion 714 via the second elevated member 734 or a second electrical conductor (eg, a metal slug or alloy, not shown), and the height of the elevated members 732, 734 is between Between 500 microns and 3 microns.

Please refer to FIG. 8 , which is a schematic diagram of still another embodiment of the LED device of the present invention. The embodiment is also applicable to an LED down-type (eg, flip-chip) LED package technology. The main difference between this embodiment and the embodiment of FIG. 7 is that the LED device 800 of the present embodiment includes only one high component 810, and the elevated component 810 is not used as the first and second electrodes 742, 744 and An electrical connection medium with the second conductive portions 712, 714, and more particularly, the first and second electrodes 742, 744 are first and second via the first and second conductive bodies 820, 830, respectively. The conductive circuits 712, 714 form an electrical connection. The details and variations of the embodiment of FIG. 8 can be inferred from the disclosure of the embodiment of FIG. 7 and the embodiments of FIGS. 7 and 8 are used to infer more similar embodiments, repetition and redundancy. The description is abbreviated here.

As described above, the embodiment of FIG. 7 and FIG. 8 may further include at least one of the following features: (1) at least one of the high-level components and the light-emitting diode die, the conductive portion, and the through hole. One has a combination to aid in bonding, conducting and/or dissipating heat. For example, as shown in FIG. 9 , the LED device 700 further includes: at least one first bonding body 910 between the first elevated component 732 and the LED die 740 and/or located Between the first elevated component 732 and the first conductive portion 712; and/or at least a second bonded body 920 between the second elevated component 734 and the LED die 740 and/or located The second high element 734 is between the second conductive portion 714. (2) The ratio of the width of either of the first and second elevated members 732, 734 of FIG. 7 to the width of the LED die 740 is between 5% and 100%. The ratio of the width of the elevated member 810 of FIG. 8 to the width of the LED die 740 is between 5% and 100%. (3) The width of the first elevated member 732 of FIG. 7 is parallel to the width of the first conductive portion 712, and the width of the second elevated member 734 is parallel to the width of the second conductive portion 714, and The ratio of the width of the first elevated member 732 to the first conductive portion 712 and the width ratio of the second elevated member 734 to the second conductive portion 714 are between 5% and 100%. (4) The materials of the height members 732 and 734 of FIG. 7 and the height member 810 of FIG. 8 have a melting point of 260 degrees Celsius or higher. For example, the material of the elevated elements 732, 734, 810 is copper or an alloy thereof. (5) The effective light-emitting angle of the light-emitting diode die 740 of FIGS. 7 and 8 is not less than 150 degrees. In contrast, prior art flip chip packaged LED devices typically have an effective exit angle of less than 140 degrees.

The implementation details and variations of the various embodiments can be inferred by those skilled in the art, and the technical features of any embodiment can be reasonably applied to other embodiments. Therefore, the description of repetition and redundancy is abbreviated here without affecting the disclosure requirements and implementability of the embodiments. In addition, in the drawings, the shapes, the dimensions, the ratios, and the like of the elements are merely illustrative, and are intended to be used by those of ordinary skill in the art to understand the present invention and are not intended to limit the present invention.

It should be noted that those skilled in the art can use the combination of known and/or self-developed semiconductor process (including packaging process) steps to fabricate the light emitting diode device of the present invention in accordance with the disclosure of the present specification. For example, the LED device 100 of FIG. 1 and its subordinate technical features can be implemented by the following steps: Step S110: providing a substrate, the substrate comprising two substrate edges and a plurality of through holes, the two substrate edges being common Defining a width of the substrate, the plurality of through holes are configured to communicate with the first surface and the second surface of the substrate, the through holes including a first through hole and a second through hole, the first and second a conductive material is formed in the through hole; Step S120: forming a high component on the first surface of the substrate, the elevated component including a first component edge and a second component edge together defining a width of the elevated component; S130: Fixing a light-emitting diode die to the high-level component by means of a solid crystal glue or other die bonding means, the light-emitting diode die comprising a first electrode and a second electrode and a first crystal a grain edge and a second grain edge, the first and second grain edges jointly defining a width of the light emitting diode die, and a width direction of the light emitting diode die is parallel to a width direction of the height member And the width of the light-emitting diode is not small a width of the high-level component; and step S140: forming a plurality of electrical conductors for electrically connecting the first electrode and the first via hole and electrically connecting the second electrode and the second via hole material. The first surface of the substrate or the reflective surface formed on the first surface can be used to reflect light from the light emitting diode die, and the height of the elevated component is between 500 micrometers and 3 micrometers. For example, the LED device 500 of FIG. 5 and its subordinate technical features can be implemented by the following steps: Step S210: providing a substrate, the substrate comprising a first conductive portion and a second conductive portion, The two conductive portions are provided with at least a uniform hole to electrically isolate the two conductive portions. Step S220: forming a high component on the first conductive portion, including a first component edge and a second component edge, the first and second component edges collectively defining a width of the elevated component. Step S230: Fixing a light-emitting diode die on the elevated component, the LED die includes a first electrode and a second electrode, and a first die edge and a second die edge The first and second die edges jointly define a width of the light emitting diode die, and the width direction of the light emitting diode die is parallel to the width direction of the elevated component, and the light emitting diode die The width is not less than the width of the elevated component. Step S240: forming a plurality of electrical conductors for electrically connecting the first electrode and the first conductive portion or one of the third conductive portions of the substrate, and electrically connecting the second electrode and the second conductive portion. A surface of the substrate or a reflective surface formed on the surface of the substrate may be used to reflect light from the light emitting diode die, and the height of the elevated component is between 500 micrometers and 3 micrometers. For example, the LED devices 700 and 800 of FIG. 7 and FIG. 8 and the subordinate technical features thereof can be implemented by the following steps: Step S310: forming a substrate including a first conductive portion and a second conductive portion And at least a uniform hole, the first conductive portion includes two first conductive portion edges for defining a width of the first conductive portion, and the second conductive portion includes two second conductive portion edges for defining a width of the second conductive portion The at least one hole is used for electrically isolating the first and second conductive portions and has a non-conductive material therein; Step S320: forming at least one high element having an outer edge and an inner edge Defining a high component width; and step S330: disposing the first and second electrodes of a light emitting diode die on the at least one high component by a conductive paste or an equivalent thereof, respectively. The polar body grain includes a first grain edge and a second grain edge together defining a width of the light emitting diode die, and a width direction of the light emitting diode die is parallel to a width direction of the height member. Light-emitting diode crystal The width greater than the width of the element elevated. In this example, the first electrode is electrically connected to the first conductive portion via a portion of the at least one high component (for example, the first elevated component 732 of FIG. 7 ), and the second electrode is via the at least one high component Another portion (for example, the second high member 734 of FIG. 7) is electrically connected to the second conductive portion, the height of the elevated member is between 500 micrometers and 3 micrometers, and a surface of the substrate or formed on the surface One of the reflective surfaces is capable of reflecting light from the luminescent diode dies. In an alternative embodiment, the first electrode is electrically connected to the first conductive portion via a first electrical conductor (for example, the first electrical conductor 820 of FIG. 8), and the second electrode is electrically connected to the second conductive body. The second electrical conductor 830) of FIG. 8 is electrically connected to the second conductive portion, and the elevated component (such as the elevated component 810 of FIG. 8) is not electrically connected to the first and second electrodes. For the second conductive portion.

In summary, the light-emitting diode device of the present invention has a larger light-emitting angle than the prior art, and supports the wire-bonding and flip-chip light-emitting diode package technologies, and the structure is not complicated and cost-effective.

Although the embodiments of the present invention are described above, the embodiments are not intended to limit the present invention, and those skilled in the art can change the technical features of the present invention according to the explicit or implicit contents of the present invention. Such variations are all within the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention is defined by the scope of the patent application of the specification.

100‧‧‧Lighting diode device
110‧‧‧Substrate
112‧‧‧First substrate edge
114‧‧‧Second substrate edge
120‧‧‧Multiple through holes
130‧‧‧High components
132‧‧‧ first component edge
134‧‧‧ second component edge
140‧‧‧Light Emitting Diode Grains
142‧‧‧First electrode
144‧‧‧second electrode
146‧‧‧First grain edge
148‧‧‧Second grain edge
149‧‧‧Base
150‧‧‧reflecting surface
160‧‧‧Multiple electrical conductors
170‧‧‧Edge of packaging material
310‧‧‧ first combination
320‧‧‧Second combination
410‧‧‧ One-half of the maximum luminous intensity of a light-emitting diode device
500‧‧‧Lighting diode device
512‧‧‧First Conductive Department
5122‧‧‧First conductive edge
514‧‧‧Second Conductive Department
520‧‧‧At least consistent hole
530‧‧‧High components
532‧‧‧ first component edge
534‧‧‧ second component edge
540‧‧‧Light Emitting Diode Grains
542‧‧‧First electrode
544‧‧‧second electrode
546‧‧‧First grain edge
548‧‧‧Second grain edge
549‧‧‧Base
550‧‧‧reflecting surface
560‧‧‧Multiple electrical conductors
570‧‧‧The edge of the packaging material
700‧‧‧Lighting diode device
712‧‧‧First Conductive Department
7122‧‧‧First conductive edge
714‧‧‧Second Conductive Department
7142‧‧‧The second conductive edge
720‧‧‧At least consistent hole
732‧‧‧The first high component
7322‧‧‧First outer edge
7324‧‧‧First inner edge
734‧‧‧Second high component
7342‧‧‧second outer edge
7344‧‧‧second inner edge
740‧‧‧Light Emitting Diode Grains
742‧‧‧First electrode
744‧‧‧second electrode
746‧‧‧First grain edge
748‧‧‧Second grain edge
750‧‧‧reflecting surface
770‧‧‧Edge of packaging material
800‧‧‧Lighting diode device
810‧‧‧High components
820‧‧‧First conductor
830‧‧‧Second conductor
910‧‧‧ first combination
920‧‧‧Second combination

1 is a schematic view showing an embodiment of a light-emitting diode device of the present invention; FIG. 2 is a schematic view showing a modification of one embodiment of FIG. 1; FIG. 3 is another embodiment of FIG. FIG. 4 is a schematic view showing an effective light-emitting angle of the light-emitting diode die of FIG. 1; FIG. 5 is a schematic view showing another embodiment of the light-emitting diode device of the present invention; FIG. 7 is a schematic view showing another embodiment of the light-emitting diode device of the present invention; FIG. 8 is a schematic view of the light-emitting diode device of the present invention. A schematic diagram of an embodiment; and [Fig. 9] is a schematic diagram showing a variation of one embodiment of the embodiment of Fig. 7.

100‧‧‧Lighting diode device

110‧‧‧Substrate

112‧‧‧First substrate edge

114‧‧‧Second substrate edge

120‧‧‧Multiple through holes

130‧‧‧High components

132‧‧‧ first component edge

134‧‧‧ second component edge

140‧‧‧Light Emitting Diode Grains

142‧‧‧First electrode

144‧‧‧second electrode

146‧‧‧First grain edge

148‧‧‧Second grain edge

149‧‧‧Base

150‧‧‧reflecting surface

160‧‧‧Multiple electrical conductors

170‧‧‧Edge of packaging material

Claims (20)

A light emitting diode (LED) device comprising: a substrate comprising two substrate edges for jointly defining a width of the substrate; and a plurality of through holes for connecting one of the first side and the second side of the substrate, including a first through hole and a second through hole, wherein the first and second through holes have a conductive material; an Elevated Element, all located directly above and/or all of the first side of the substrate Located on a reflective surface, the elevated component includes a first component edge and a second component edge, the first and second component edges collectively defining a width of the elevated component; a light emitting diode die, via a The first adhesive material is fixed on the high-level component, the light-emitting diode die includes a first electrode and a second electrode, and a first die edge and a second die edge, the first and the first The two crystal grain edges jointly define a width of the light emitting diode die, the width direction of the light emitting diode die is parallel to the width direction of the height member, and the width of the light emitting diode die is not less than the frame The width of the high component; the reflective surface is located on the substrate And a plurality of through holes for reflecting light from the light emitting diode die, the upper member is fixed to the reflective surface via a second adhesive; and a plurality of electrical conductors are used The electrically conductive material of the first electrode and the first through hole is electrically connected to the electrically conductive material of the second through hole and the second through hole, wherein the height of the elevated component is between 500 micrometers and 3 micrometers. between. The light-emitting diode device of claim 1, wherein the height member is made of metal. The illuminating diode device of claim 1 or 2, wherein the plurality of through holes further comprise a third through hole, the third through hole being located below the elevated member for The high component assists the heat dissipation of the light emitting diode die. The light-emitting diode device according to claim 1, wherein the height member is made of ceramic or plastic. The light-emitting diode device of claim 1, wherein the material of each of the first and second adhesive materials is selected from the group consisting of transparent adhesive, conductive adhesive or transparent conductive adhesive. The light-emitting diode device of claim 1, wherein a ratio of a width of the elevated element to the light-emitting diode die is between 5% and 100%. The illuminating diode device of claim 1, wherein the width direction of the height member is parallel to the width of the substrate, and the width ratio of the two is between 5% and 100%. The light-emitting diode device of claim 1, wherein the effective light-emitting angle of the light-emitting diode die is greater than 130 degrees. The illuminating diode device of claim 1, wherein the plurality of electrical conductors are Bonding Wires. A light emitting diode device comprising: a substrate comprising a first conductive portion and a second conductive portion, wherein the first conductive portion includes two first conductive portion edges for defining a width of the first conductive portion; a hole for electrically isolating the first and second conductive portions, wherein the at least one of the holes has a non-conductive material; and a high element is located on the first conductive portion, including a first component edge and a second component edge The first and second component edges together define a width of the elevated component; a light emitting diode die is disposed on the elevated component, including a first electrode and a second electrode, and a first die edge With a second die edge, the first Defining the width of the light-emitting diode die together with the edge of the second die, the width direction of the light-emitting diode die is parallel to the width direction of the height member, and the width of the light-emitting diode die is not less than a width of the elevated component; a reflective surface on the substrate and/or the at least one of the adjacent holes for reflecting light from the light emitting diode die; and a plurality of electrical conductors for electrically connecting the first An electrode and the first conductive portion or a third conductive portion of the substrate, and electrically connected to the second electrode and the second conductive portion, wherein the height of the height member is between 500 micrometers and 3 micrometers . The light-emitting diode device of claim 10, wherein the height member is made of metal. The light-emitting diode device of claim 10, wherein a ratio of a width of the elevated element to the light-emitting diode die is between 5% and 100%. The illuminating diode device of claim 10, wherein a width direction of the height member is parallel to a width of the first conductive portion, and a width ratio of the two is between 5% and 100%. between. The light-emitting diode device of claim 10, wherein the effective light-emitting angle of the light-emitting diode die is greater than 130 degrees. An LED device includes: a substrate including a first conductive portion and a second conductive portion, the first conductive portion including two first conductive portion edges for defining a width of the first conductive portion, the first The second conductive portion includes two second conductive portion edges for defining a width of the second conductive portion; at least a uniform hole for electrically isolating the first and second conductive portions, wherein the at least one of the holes has a non-conductive material; At least one high component having at least one outer edge and at least one inner edge for defining a high component width; a light emitting diode die on the at least one high component, including a first electrode and a first a second electrode and a first die edge and a second die edge, the first and second die edges jointly defining a width of the LED die, the width direction of the LED die and the The width of the elevated component is parallel, the width of the LED die is greater than the width of the elevated component; and a reflective surface is located on the substrate and/or the at least consistent aperture for reflecting the crystal from the LED a light of a particle, wherein the first electrode is electrically connected to the first conductive portion via a portion of the at least one high component or a first conductive body, and the second electrode is connected to another portion or a first portion of the at least one high component The second conductive body is electrically connected to the second conductive portion, and the first and second electrodes are not electrically connected via the at least one high-level component, and the effective light-emitting angle of the light-emitting diode is not less than 150 degrees. The light-emitting diode device according to claim 15, wherein the material of the height member has a melting point of 260 degrees Celsius or higher. The illuminating diode device of claim 15, wherein the at least one high component comprises: a first elevated component and a second elevated component are respectively located on the first and second conductive portions, The first elevated member has a first outer edge and a first inner edge for defining a first width, and the second elevated member has a second outer edge and a second inner edge for defining a second Width, wherein the distance between the first and second inner edges is shorter than the distance between any two other edges, at least a portion of the first outer edge and at least a portion of the second outer edge are located at the edges of the first and second dies between. The light-emitting diode device of claim 15 or 17, wherein a ratio of a width of any one of the at least one high component to a width of the light-emitting diode die is 5% to Between 100%. The illuminating diode device of claim 17, wherein the first electrode is electrically connected to the first conductive portion via the first elevated member, and the second electrode is electrically connected via the second high member Connecting the second conductive portion. The light-emitting diode device of claim 15, wherein the height of the height member is between 500 micrometers and 3 micrometers.