TWI582824B - 處理腔室及用於處理基材之方法 - Google Patents

處理腔室及用於處理基材之方法 Download PDF

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Publication number
TWI582824B
TWI582824B TW101104101A TW101104101A TWI582824B TW I582824 B TWI582824 B TW I582824B TW 101104101 A TW101104101 A TW 101104101A TW 101104101 A TW101104101 A TW 101104101A TW I582824 B TWI582824 B TW I582824B
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TW
Taiwan
Prior art keywords
substrate support
target
processing chamber
ground
chamber
Prior art date
Application number
TW101104101A
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English (en)
Chinese (zh)
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TW201239944A (en
Inventor
拉許德幕哈瑪德Ｍ
汪榮軍
尼古言善Ｘ
利奇艾倫Ａ
Original Assignee
應用材料股份有限公司
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Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201239944A publication Critical patent/TW201239944A/zh
Application granted granted Critical
Publication of TWI582824B publication Critical patent/TWI582824B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW101104101A 2011-02-09 2012-02-08 處理腔室及用於處理基材之方法 TWI582824B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161441186P 2011-02-09 2011-02-09

Publications (2)

Publication Number Publication Date
TW201239944A TW201239944A (en) 2012-10-01
TWI582824B true TWI582824B (zh) 2017-05-11

Family

ID=46639133

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101104101A TWI582824B (zh) 2011-02-09 2012-02-08 處理腔室及用於處理基材之方法

Country Status (6)

Country Link
US (1) US9087679B2 (cg-RX-API-DMAC7.html)
JP (1) JP6351262B2 (cg-RX-API-DMAC7.html)
KR (1) KR101904516B1 (cg-RX-API-DMAC7.html)
CN (1) CN103348446B (cg-RX-API-DMAC7.html)
TW (1) TWI582824B (cg-RX-API-DMAC7.html)
WO (1) WO2012109104A2 (cg-RX-API-DMAC7.html)

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US10714436B2 (en) 2012-12-12 2020-07-14 Lam Research Corporation Systems and methods for achieving uniformity across a redistribution layer
CN105336640B (zh) * 2014-06-17 2018-12-11 北京北方华创微电子装备有限公司 一种反应腔室和反应设备
CN105734520B (zh) * 2014-12-11 2018-08-24 北京北方华创微电子装备有限公司 工艺腔室
US9865437B2 (en) * 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
CN104928625B (zh) * 2015-05-22 2017-06-16 沈阳富创精密设备有限公司 一种pvd制备半导体装备用抗高温蠕变接地基片的方法
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
US11640917B2 (en) * 2018-12-07 2023-05-02 Applied Materials, Inc. Ground electrode formed in an electrostatic chuck for a plasma processing chamber
CN114502771A (zh) * 2019-08-02 2022-05-13 应用材料公司 射频功率返回路径
US11664247B2 (en) * 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
CN115679271B (zh) * 2021-07-22 2024-09-20 北京北方华创微电子装备有限公司 半导体工艺腔室
US11898236B2 (en) 2021-10-20 2024-02-13 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN114023620B (zh) * 2021-10-29 2023-07-14 德鸿半导体设备(浙江)有限公司 一种用于处理基片的处理站
CN117116731A (zh) * 2022-05-16 2023-11-24 中微半导体设备(上海)股份有限公司 等离子体处理装置、等离子体约束系统及方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
US3661758A (en) * 1970-06-26 1972-05-09 Hewlett Packard Co Rf sputtering system with the anode enclosing the target
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
JP2010163690A (ja) * 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置
TW201033402A (en) * 2009-02-04 2010-09-16 Applied Materials Inc Ground return for plasma processes
TW201043099A (en) * 2008-12-03 2010-12-01 Applied Materials Inc Modulation of RF returning straps for uniformity control

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JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
JP4040607B2 (ja) * 2004-06-14 2008-01-30 芝浦メカトロニクス株式会社 スパッタリング装置及び方法並びにスパッタリング制御用プログラム
US7713390B2 (en) 2005-05-16 2010-05-11 Applied Materials, Inc. Ground shield for a PVD chamber
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US8123902B2 (en) * 2007-03-21 2012-02-28 Applied Materials, Inc. Gas flow diffuser
US8357746B2 (en) * 2007-05-03 2013-01-22 Johns Manville Binding of fibrous material utilizing a water soluble Michael adduct crosslinking agent and polycarboxylic acid
KR101841236B1 (ko) 2009-04-03 2018-03-22 어플라이드 머티어리얼스, 인코포레이티드 고압 ｒｆ-ｄｃ 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법
US20110036709A1 (en) 2009-08-11 2011-02-17 Applied Materials, Inc. Process kit for rf physical vapor deposition
US8795488B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Apparatus for physical vapor deposition having centrally fed RF energy

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661758A (en) * 1970-06-26 1972-05-09 Hewlett Packard Co Rf sputtering system with the anode enclosing the target
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
JP2010163690A (ja) * 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置
TW201043099A (en) * 2008-12-03 2010-12-01 Applied Materials Inc Modulation of RF returning straps for uniformity control
TW201033402A (en) * 2009-02-04 2010-09-16 Applied Materials Inc Ground return for plasma processes

Also Published As

Publication number Publication date
TW201239944A (en) 2012-10-01
CN103348446B (zh) 2016-08-24
US9087679B2 (en) 2015-07-21
KR20140063511A (ko) 2014-05-27
WO2012109104A2 (en) 2012-08-16
KR101904516B1 (ko) 2018-10-04
WO2012109104A3 (en) 2013-01-03
CN103348446A (zh) 2013-10-09
JP6351262B2 (ja) 2018-07-04
US20120211354A1 (en) 2012-08-23
JP2014509351A (ja) 2014-04-17

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