TWI582432B - Ic test socket with capacitor - Google Patents

Ic test socket with capacitor Download PDF

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Publication number
TWI582432B
TWI582432B TW105101705A TW105101705A TWI582432B TW I582432 B TWI582432 B TW I582432B TW 105101705 A TW105101705 A TW 105101705A TW 105101705 A TW105101705 A TW 105101705A TW I582432 B TWI582432 B TW I582432B
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hub
contact metal
interposer
capacitor
test socket
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TW105101705A
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Chinese (zh)
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TW201727238A (en
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李文聰
謝開傑
鄧元瑲
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中華精測科技股份有限公司
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Description

整合電容模組之IC測試座 IC test stand for integrated capacitor module

本發明是關於一種電性功能的測試裝置,特別是有關於一種整合電容模組之IC測試座。 The invention relates to an electrical function testing device, in particular to an IC test socket for integrating a capacitor module.

隨著電子科技、網路等相關技術的進步,同時全球電子市場的消費水準逐步提升,致使消費性電子產品的需求量激增,進而帶動半導體產業的蓬勃發展。 With the advancement of related technologies such as electronic technology and the Internet, and the gradual increase in the consumption level of the global electronic market, the demand for consumer electronic products has soared, which has led to the vigorous development of the semiconductor industry.

半導體製造(或稱晶圓加工)包括以下幾個步驟:IC設計、晶圓製程(wafer fabrication)、晶圓測試(wafer probe)、晶圓封裝(packaging)以及封裝後測試(final test,意指IC測試)等,而其中所謂的晶圓測試及封裝後測試,指的是對未單切之晶圓上的一個或多個晶粒或從晶圓切下來的一個或多個晶粒(封裝或未封裝)進行電性功能的測試,藉以找出不合格晶粒並將其淘汰。一般來說,半導體晶粒在進行測試時,測試機須透過探針卡接觸待測物(device under test,DUT),亦即將探針卡作為測試機與待測物間之測試信號與電源信號的傳輸介面,並配合探針卡與測試機的控制與分析程序,達到量測待測物之電性特徵的目的。 Semiconductor manufacturing (or wafer processing) involves the following steps: IC design, wafer fabrication, wafer probe, wafer packaging, and post-package testing. IC test), etc., where the so-called wafer test and post-package test refers to one or more dies on the uncut wafer or one or more dies cut from the wafer (package) Or not packaged) Conduct electrical testing to identify unqualified dies and eliminate them. Generally, when the semiconductor die is being tested, the tester must touch the device under test (DUT) through the probe card, that is, the probe card is used as the test signal and power signal between the tester and the object to be tested. The transmission interface, together with the control and analysis procedures of the probe card and the test machine, achieves the purpose of measuring the electrical characteristics of the object to be tested.

更進一步來說,電子元件越趨高速化與高頻發展,電子元件就更加需要有高標準的電性規格(如:元件運算條件、操作頻率、信號傳輸特性等),所以探針卡在設計上須至少考量到測試條件、測試頻寬與信號傳輸的完整性。然而,為滿足封裝後測試(final test)之需求,對於高速(頻)信號或電源信號的傳輸路徑上都需要電容 器,但功能有所不同。 Furthermore, electronic components are becoming more expensive and high-frequency development, and electronic components are required to have high-standard electrical specifications (such as component operation conditions, operating frequency, signal transmission characteristics, etc.), so the probe card is designed. At least the test conditions, test bandwidth and signal transmission integrity must be considered. However, in order to meet the requirements of the final test, capacitors are required for the transmission path of high-speed (frequency) signals or power signals. But the function is different.

請參考圖1,為習知的IC測試探針卡的結構示意圖。習知的IC測試探針卡100在封裝後測試過程中,因為受限於產品結構及測試機構,通常係將電容器102配置於IC測試介面板104上(意指Loadboard PCB),且較靠近測試機台端(test side),如此一來,待測電子元件便會因為電源供給不足而導致信號失真,使得在測試過程中容易有誤判的情形產生。 Please refer to FIG. 1 , which is a structural diagram of a conventional IC test probe card. The conventional IC test probe card 100 is usually placed on the IC test panel 104 (meaning Loadboard PCB) during the post-package test because it is limited by the product structure and the test mechanism, and is closer to the test. The test side, as a result, the electronic components to be tested will be distorted due to insufficient power supply, making it easy to misjudge the test process.

本發明從改善高頻信號傳遞品質的角度出發,主要目的之一在於提供一種整合電容模組之IC測試座,其可大幅提升電容於晶圓測試或封裝後測試應用的重要性。 One of the main purposes of the present invention from the viewpoint of improving the quality of high-frequency signal transmission is to provide an IC test socket integrated with a capacitor module, which can greatly increase the importance of capacitance in wafer testing or post-packaging testing applications.

為實現上述之目的,本發明採用以下技術方案:一種整合電容模組之IC測試座,其包括:一第一針座;一第二針座,該第二針座與該第一針座呈相對設置;一具有電容之中介層結構,該具有電容之中介層結構設置於該第一針座與該第二針座之間,且表面設有複數個接觸金屬墊以形成一電容模組;及一探針模組,包括複數個長探針及複數個短探針,該些長探針貫穿該第一針座、該具有電容之中介層結構、及該第二針座,而該些短探針包括至少一對呈上下分佈的探針,且分別貫穿該第一針座及該第二針座,並與該電容模組串接。 To achieve the above objective, the present invention adopts the following technical solution: an IC test socket for integrating a capacitor module, comprising: a first hub; a second hub, the second hub being opposite the first hub a relative arrangement; an interposer having a capacitance, the interposer having a capacitance disposed between the first hub and the second hub, and having a plurality of contact metal pads on the surface to form a capacitor module; And a probe module comprising a plurality of long probes and a plurality of short probes, the long probes extending through the first needle seat, the interposer having a capacitance, and the second socket The short probe includes at least one pair of probes distributed up and down, and penetrates the first hub and the second hub respectively, and is connected in series with the capacitor module.

在本發明的一實施例中,該第一針座包括一第一針盤及一設置於該第一針盤內側的第一定位板,該第一針座中具有複數個貫穿該第一針盤及該第一定位板的第一針孔,該第二針座包括一第二針盤及一設置於該第二針盤內側的第二定位板,該第二針座中具有複數個貫穿該第二針盤及該第二定位板的第二針孔。 In an embodiment of the invention, the first needle hub includes a first dial and a first positioning plate disposed on the inner side of the first dial. The first hub has a plurality of first needles extending through the first needle. a first pinhole of the first positioning plate, the second pinhole includes a second dial and a second positioning plate disposed on the inner side of the second dial, wherein the second hub has a plurality of through holes The second dial and the second pinhole of the second positioning plate.

在本發明的一實施例中,該些第一針孔與該些第二針孔呈相對設置。 In an embodiment of the invention, the first pinholes are disposed opposite to the second pinholes.

在本發明的一實施例中,該具有電容之中介層結構包括一中 介層主體及一電容器,而該些接觸金屬墊包括複數個第一接觸金屬墊及複數個第二接觸金屬墊,該些第一接觸金屬墊設置於該中介層主體之一側,該些第二接觸金屬墊設置於該中介層主體之相對另一側,且該電容器與該些第一接觸金屬墊及該些第二接觸金屬墊電性連接。 In an embodiment of the invention, the interposer structure having a capacitance includes a middle And a plurality of first contact metal pads and a plurality of second contact metal pads, wherein the first contact metal pads are disposed on one side of the intermediate layer body, and the plurality of first contact metal pads The two contact metal pads are disposed on opposite sides of the interposer body, and the capacitor is electrically connected to the first contact metal pads and the second contact metal pads.

在本發明的一實施例中,該中介層主體包括相對設置的一第一表面層及一第二表面層,該第一表面層位於該中介層主體與該第一針座之間,該些第一接觸金屬墊間隔地設置於該第一表面層上,該第二表面層位於該中介層主體與該第二針座之間,該些第二接觸金屬墊間隔地設置於該第二表面層上。 In an embodiment of the present invention, the interposer body includes a first surface layer and a second surface layer disposed opposite to each other, and the first surface layer is located between the interposer body and the first hub. The first contact metal pad is spaced apart from the first surface layer, the second surface layer is located between the interposer body and the second needle seat, and the second contact metal pads are spaced apart from the second surface. On the floor.

在本發明的一實施例中,該具有電容之中介層結構更包括複數個導電柱,該些導電柱間隔地內埋於該中介層主體之中,且每一個該導電柱分別接觸相對應的一個該第一接觸金屬墊與一個該第二接觸金屬墊。 In an embodiment of the invention, the interposer having a capacitance further includes a plurality of conductive pillars, the conductive pillars are buried in the interposer body at intervals, and each of the conductive pillars respectively contacts the corresponding one. A first contact metal pad and a second contact metal pad.

在本發明的一實施例中,該電容器係採高介電常數材料,並以薄膜加工方式形成,且以內建方式置於該中介層主體之中。 In an embodiment of the invention, the capacitor is made of a high dielectric constant material and formed in a thin film process and placed in a built-in manner in the body of the interposer.

在本發明的一實施例中,該電容器設置於該第一表面層上,且該電容器透過焊接連接於相鄰的兩個該第一接觸金屬墊上。 In an embodiment of the invention, the capacitor is disposed on the first surface layer, and the capacitor is connected to the adjacent two of the first contact metal pads by soldering.

在本發明的一實施例中,該些長探針不與該具有電容之中介層結構產生信號連結,該探針模組的該些短探針用於與該具有電容之中介層結構形成迴路,同時儲蓄電以提供測試時所需的電流。 In an embodiment of the invention, the long probes are not connected to the interposer having a capacitance, and the short probes of the probe module are used to form a loop with the interposer having a capacitance. At the same time, save electricity to provide the current required for the test.

在本發明的一實施例中,該些短探針以其探針尖與該具有電容之中介層結構的該些接觸金屬墊連接以形成迴路。 In an embodiment of the invention, the short probes are connected by their probe tips to the contact metal pads having the interposer structure of the capacitor to form a loop.

本發明至少具有以下有益效果:本發明整合電容模組之IC測試座透過“在第一針座與第二針座之間配置一具有電容之中介層結構,其表面設有複數個接觸金屬墊以形成一電容模組”的設計,當用於晶圓測試或封裝後測試時,可將電容控制在最靠近待測IC端的位置以提升電容的效益,進而提升晶圓的測試良率及效能。 The present invention has at least the following beneficial effects: the IC test socket of the integrated capacitor module of the present invention transmits "a dielectric layer structure having a capacitance between the first needle seat and the second needle seat, and a plurality of contact metal pads are disposed on the surface thereof. In order to form a capacitor module, when used for wafer testing or post-package testing, the capacitor can be controlled to the position closest to the IC to be tested to improve the efficiency of the capacitor, thereby improving the test yield and performance of the wafer. .

為使能更進一步瞭解本發明之特徵及技術內容,請參閱以下有關本發明之詳細說明與附圖,但是此等說明與所附圖式僅係用來說明本發明,而非對本發明的權利範圍作任何的限制。 The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.

(先前技術) (previous technology)

100‧‧‧IC測試探針卡 100‧‧‧IC test probe card

102‧‧‧電容器 102‧‧‧ capacitor

104‧‧‧測試介面板 104‧‧‧Testing panel

(本發明) (this invention)

100a、100b、100c、100d‧‧‧IC測試座 100a, 100b, 100c, 100d‧‧‧ IC test socket

10‧‧‧第一針座 10‧‧‧first needle seat

11‧‧‧第一針盤 11‧‧‧First dial

12‧‧‧第一定位板 12‧‧‧First Positioning Plate

13‧‧‧第一針孔 13‧‧‧first pinhole

20‧‧‧第二針座 20‧‧‧Second hub

21‧‧‧第二定位板 21‧‧‧Second positioning plate

22‧‧‧第二針盤 22‧‧‧Second dial

23‧‧‧第二針孔 23‧‧‧second pinhole

30、30’‧‧‧具有電容之中介層結構 30, 30'‧‧‧Intermediate layer structure with capacitance

31‧‧‧中介層主體 31‧‧‧Intermediary body

32‧‧‧第一表面層 32‧‧‧First surface layer

33‧‧‧第二表面層 33‧‧‧Second surface layer

34‧‧‧第一接觸金屬墊 34‧‧‧First contact metal pad

35‧‧‧第二接觸金屬墊 35‧‧‧Second contact metal pad

36‧‧‧導電柱 36‧‧‧conductive column

C‧‧‧電容模組 C‧‧‧Capacitor Module

C’‧‧‧電容器 C’‧‧‧ capacitor

37‧‧‧通孔 37‧‧‧through hole

40‧‧‧探針模組 40‧‧‧ Probe Module

41‧‧‧長探針 41‧‧‧Long probe

42‧‧‧短探針 42‧‧‧Short probe

圖1為習知的IC測試探針卡的部分結構示意圖。 FIG. 1 is a partial structural diagram of a conventional IC test probe card.

圖2為本發明之第一實施例之整合電容模組之IC測試座的結構示意圖。 2 is a schematic structural view of an IC test socket of an integrated capacitor module according to a first embodiment of the present invention.

圖3為本發明之第二實施例之整合電容模組之IC測試座的結構示意圖。 3 is a schematic structural view of an IC test socket of an integrated capacitor module according to a second embodiment of the present invention.

圖4為本發明之第三實施例之整合電容模組之IC測試座的結構示意圖。 4 is a schematic structural view of an IC test socket of an integrated capacitor module according to a third embodiment of the present invention.

圖5為本發明之第四實施例之整合電容模組之IC測試座的結構示意圖。 FIG. 5 is a schematic structural diagram of an IC test socket of an integrated capacitor module according to a fourth embodiment of the present invention.

本發明所揭露的內容主要是關於IC測試座的結構改良,其特點在於,將薄膜電容或實體電容整合在測試座內部,形成一個信號傳輸路徑中帶有電容的架構;如此一來,IC測試座用於封裝後測試或晶圓式(Wafer Level)封裝測試時,由於薄膜電容或實體電容係被配置於最靠近待測IC端的位置,因此可縮短電源供應時間,以因應測試過程中各項測試信號同時做動的電流擷取之需求。 The disclosure of the present invention mainly relates to a structural improvement of an IC test stand, which is characterized in that a film capacitor or a solid capacitor is integrated in a test socket to form a structure with a capacitor in a signal transmission path; thus, the IC test When used for post-package test or Wafer Level package test, since the film capacitor or solid capacitor is placed closest to the IC end to be tested, the power supply time can be shortened to meet the various requirements during the test. The test signal is simultaneously driven by the current draw requirement.

下文中特舉數個較佳的實施例,並配合所附圖式說明本發明的實施方式,所屬技術領域中具有通常知識者可由本說明書所揭示的內容瞭解本發明的優點與功效。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。另外,本發明的圖式僅為簡單示意說明,並非依實際尺寸的描繪,先予敘明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所揭示的內容並非用以限制本發明的技術範疇。 The embodiments of the present invention are described in the following with reference to the accompanying drawings, and those of ordinary skill in the art can understand the advantages and advantages of the present invention. The present invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not described in terms of actual dimensions. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the technical scope of the present invention.

探針卡的使用原理與基本功能,已為相關技術領域具有通常知識者所能明瞭,故以下文中之說明,不再作完整描述。同時,以下文中所對照之圖式,係表達與本發明特徵有關之結構示意,並未亦不需要依據實際尺寸完整繪製,合先述明。 The use principle and basic functions of the probe card are well known to those skilled in the relevant art, and therefore, the description below will not be completely described. At the same time, the drawings referred to in the following texts express the structural schematics related to the features of the present invention, and do not need to be completely drawn according to the actual size, which will be described first.

〔第一實施例〕 [First Embodiment]

請參閱圖2,為本發明第一實施例之整合電容模組之IC測試座的結構示意圖。本實施例之IC測試座100a主要用於封裝後的IC測試;如圖2所示,IC測試座100a包括一第一針座10、一第二針座20、一具有電容之中介層結構30、及一探針模組40,首先說明該等構成元件的相對關係,第一針座10與第二針座20呈相對設置,具有電容之中介層結構30設置於第一針座10與第二針座20之間,探針模組40中之長探針41貫穿第一針座10、具有電容之中介層結構30、及第二針座20。 Please refer to FIG. 2 , which is a structural diagram of an IC test socket of an integrated capacitor module according to a first embodiment of the present invention. The IC test socket 100a of this embodiment is mainly used for IC testing after packaging; as shown in FIG. 2, the IC test socket 100a includes a first hub 10, a second hub 20, and a capacitor layer structure 30. And a probe module 40, firstly, the relative relationship of the constituent elements is described. The first hub 10 and the second hub 20 are oppositely disposed, and the interposer 30 having a capacitance is disposed on the first hub 10 and the first Between the two needle holders 20, the long probe 41 of the probe module 40 extends through the first needle holder 10, the interposer structure 30 having a capacitance, and the second needle holder 20.

接下來將說明該等構成元件的結構特徵及細部連結關係,第一針座10在結構上係與第二針座20大致相同,且第一針座10與第二針座20可藉由數個機構件(如:固定螺絲、螺絲孔、螺帽等)組合在一起。本實施例中,第一和第二針座10、20可具有規則形狀(如:矩形),且兩者的形狀相對稱;另外,第一和第二針座10、20可為高硬度且易加工之材質(如:工程塑膠、陶瓷、玻璃、藍寶石等),然而本發明並不限定第一和第二針座10、20的形狀及材料。 Next, the structural features and the detailed connection relationship of the constituent elements will be described. The first hub 10 is substantially identical in structure to the second hub 20, and the first hub 10 and the second hub 20 are The individual components (such as fixing screws, screw holes, nuts, etc.) are combined. In this embodiment, the first and second hubs 10, 20 may have a regular shape (eg, a rectangle), and the shapes of the two are symmetrical; in addition, the first and second hubs 10, 20 may be high in hardness and Easy-to-machine materials (eg, engineering plastics, ceramics, glass, sapphire, etc.), however, the invention does not limit the shape and material of the first and second hubs 10, 20.

更進一步來說,第一針座10包括一第一針盤11及一設置於第一針盤11內側的第一定位板12,且第一針座10中還具有數個貫穿第一針盤11及第一定位板12的第一針孔13;第二針座20包括一第二針盤22及一設置於第二針盤22內側的第二定位板21,且第二針座20中還具有數個貫穿第二針盤22及第二定位板21的第二針孔23。從功能上來看,第一和第二針盤11、22可方 便探針的植針,而第一和第二定位板12、21可幫助探針的安裝及定位。 Further, the first hub 10 includes a first dial 11 and a first positioning plate 12 disposed on the inner side of the first dial 11, and the first hub 10 further has a plurality of first dials. 11 and the first pinhole 13 of the first positioning plate 12; the second needle holder 20 includes a second dial 22 and a second positioning plate 21 disposed on the inner side of the second dial 22, and the second needle holder 20 There are also a plurality of second pinholes 23 extending through the second dial 22 and the second positioning plate 21. Functionally, the first and second dials 11, 22 are square The implant needle of the probe, while the first and second positioning plates 12, 21 can assist in the mounting and positioning of the probe.

具有電容之中介層結構30亦可藉由數個機構件(如:固定螺絲、螺絲孔、螺帽等)安裝在第一和第二針座10、20之間,值得注意的是,具有電容之中介層結構30包括一中介層主體31及一設置於中介層主體31上的電容模組C;本實施例中,中介層主體31包括相對的一第一表面層32及一第二表面層33,電容模組C包括複數個第一接觸金屬墊34、複數個第二接觸金屬墊35、複數個導電柱36、及至少一個電容器C’,其中第一接觸金屬墊34間隔地設置於第一表面層32上,第二接觸金屬墊35間隔地設置於第二表面層33上,第一和第二接觸金屬墊34、35的分布為上下對應關係,導電柱36間隔地內埋於中介層主體31之中,每一個導電柱36分別接觸相對應的一個第一接觸金屬墊34與一個第二接觸金屬墊35,電容器C’亦內埋於中介層主體31之中,且電容器C’之正、負極分別與相鄰的兩個導電柱36相連接。 The interposer structure 30 having a capacitance may also be mounted between the first and second hubs 10, 20 by a plurality of mechanical components (eg, fixing screws, screw holes, nuts, etc.), notably, having a capacitance The interposer structure 30 includes an interposer body 31 and a capacitor module C disposed on the interposer body 31. In this embodiment, the interposer body 31 includes a first surface layer 32 and a second surface layer. The capacitor module C includes a plurality of first contact metal pads 34, a plurality of second contact metal pads 35, a plurality of conductive pillars 36, and at least one capacitor C', wherein the first contact metal pads 34 are spaced apart from each other. On a surface layer 32, the second contact metal pads 35 are spaced apart from each other on the second surface layer 33. The distribution of the first and second contact metal pads 34, 35 is in an upper and lower correspondence relationship, and the conductive pillars 36 are buried in the space at intervals. Each of the conductive pillars 36 is in contact with a corresponding first contact metal pad 34 and a second contact metal pad 35. The capacitor C' is also buried in the interposer main body 31, and the capacitor C'. The positive and negative poles are respectively electrically connected to the adjacent two Columns 36 are connected.

更進一步來說,第一和第二接觸金屬墊34、35可當作內埋式電容器C’的電性接點,而透過第一和第二接觸金屬墊34、35的配置與內部互連連線(圖中未顯示)的佈局安排,可將電容器C’與電源信號及接地信號形成一個迴路。應理解,第一和第二接觸金屬墊34、35及導電柱36的數量係可根據電容器C’的數量作調整。 Furthermore, the first and second contact metal pads 34, 35 can serve as electrical contacts for the buried capacitor C', and through the configuration and internal interconnection of the first and second contact metal pads 34, 35. The layout of the wires (not shown) allows the capacitor C' to form a loop with the power and ground signals. It should be understood that the number of first and second contact metal pads 34, 35 and conductive posts 36 can be adjusted based on the number of capacitors C'.

雖然在圖2所示的IC測試座100a中,電容器C’的數量只有一個,但是對於本實施例之其他實施態樣,IC測試座100a所包括電容器C’的數量可以有二個或三個以上,只要符合電容值諧振頻率便可;所以說,圖2所示的電容器C’的數量僅供參考,並非用來限定本發明。 Although the number of capacitors C' is only one in the IC test socket 100a shown in FIG. 2, for other embodiments of the embodiment, the number of capacitors C' included in the IC test socket 100a may be two or three. The above is only required to meet the capacitance resonance frequency; therefore, the number of capacitors C' shown in FIG. 2 is for reference only and is not intended to limit the present invention.

探針模組40包括數根探針,從功能上來看,該些探針中包括有信號針、接地針、及電源針等,其使用原理與基本功能係為相關技術領域中具有通常知識者所能明瞭,故在此不予贅述。本實 施例中,探針模組40為複數個長探針41及至少一對短探針42所組成,其中長探針41不與具有電容之中介層結構30產生信號連結,短探針42用於與具有電容之中介層結構30形成迴路,同時儲蓄電以提供測試時所需的電流;具體地說,相對於一個電容模組C須配置一對短探針42,亦即短探針42的數量視電容器C’的數量而定。 The probe module 40 includes a plurality of probes. Functionally, the probes include a signal pin, a ground pin, and a power pin. The principle of use and basic functions are those of ordinary skill in the related art. It can be understood, so I won't go into details here. Real In the embodiment, the probe module 40 is composed of a plurality of long probes 41 and at least one pair of short probes 42. The long probes 41 are not connected to the interposer 30 having a capacitance, and the short probes 42 are used. Forming a loop with the interposer structure 30 having a capacitance while conserving electricity to provide a current required for testing; specifically, a pair of short probes 42, that is, short probes 42, are disposed relative to a capacitor module C. The number depends on the number of capacitors C'.

更進一步來說,如圖2所示,探針模組40安裝定位後,長探針41係同時貫穿第一針座10的第一針孔13、具有電容之中介層結構30的通孔37與第二針座20的第二針孔23,至少一對短探針42則係分別設置於第一針座10的第一針孔13與第二針座20的第二針孔23,並分別與第一和第二接觸金屬墊34、35接觸;藉此,可避免探針模組40與電容模組C發生干涉,進而探針模組40可與電容模組C電性連接並形成迴路。 Furthermore, as shown in FIG. 2, after the probe module 40 is mounted and positioned, the long probe 41 penetrates through the first pinhole 13 of the first hub 10 and the through hole 37 of the interposer 30 having a capacitance. With the second pinhole 23 of the second hub 20, at least one pair of short probes 42 are respectively disposed on the first pinhole 13 of the first hub 10 and the second pinhole 23 of the second hub 20, and Contacting the first and second contact metal pads 34, 35 respectively; thereby preventing the probe module 40 from interfering with the capacitor module C, and the probe module 40 can be electrically connected to the capacitor module C and formed Loop.

〔第二實施例〕 [Second embodiment]

請參閱圖3,為本發明第三實施例之整合電容模組之IC測試座的結構示意圖。本實施例之IC測試座100b同樣係用於封裝後的IC測試;如圖3所示,IC測試座100b包括一第一針座10、一第二針座20、一具有電容之中介層結構30、及一探針模組40。本實施例與第一實施例的不同之處在於,具有電容之中介層結構30’的電容模組C中,電容器C’並非係內埋於中介層主體31之中,而係設置於第一表面層32或第二表面層33上;具體地說,電容器C’之正、負極係以焊接方式與相鄰的兩個第一接觸金屬墊34連接並形成導通。 Please refer to FIG. 3 , which is a structural diagram of an IC test socket of an integrated capacitor module according to a third embodiment of the present invention. The IC test socket 100b of the embodiment is also used for IC testing after packaging; as shown in FIG. 3, the IC test socket 100b includes a first needle holder 10, a second needle holder 20, and an interposer structure having a capacitance. 30. A probe module 40. The difference between this embodiment and the first embodiment is that in the capacitor module C having the interposer 30' of the capacitor, the capacitor C' is not buried in the interposer main body 31, but is disposed in the first On the surface layer 32 or the second surface layer 33; specifically, the positive and negative electrodes of the capacitor C' are connected to the adjacent two first contact metal pads 34 by soldering and form a conduction.

雖然在圖3所示的IC測試座100b中,電容器C’的數量只有一個,而且係電性連接於第一接觸金屬墊34,但是對於本實施例之其他實施態樣,IC測試座100b所包括電容器C’的數量可以有二個或三個以上,其中電容器C’亦可電性連接於第二接觸金屬墊 35,只要IC測試座100b的內部空間足夠便可;所以說,圖3所示的電容器C’的數量及其位置配置僅供參考,並不限定本發明。 Although the number of capacitors C' is only one in the IC test socket 100b shown in FIG. 3, and is electrically connected to the first contact metal pad 34, for other embodiments of the embodiment, the IC test socket 100b is The number of capacitors C' may be two or more, wherein the capacitor C' may also be electrically connected to the second contact metal pad. 35, as long as the internal space of the IC test stand 100b is sufficient; therefore, the number of capacitors C' shown in Fig. 3 and its positional arrangement are for reference only, and do not limit the present invention.

〔第三實施例〕 [Third embodiment]

請參閱圖4,為本發明第三實施例之整合電容模組之IC測試座的結構示意圖。值得說明的是,不同於前面兩個實施例係用於封裝後的IC測試,本實施例之IC測試座100c主要用於晶圓式封裝後的IC測試;如圖4所示,IC測試座100c包括一第一針座10、一第二針座20、一具有電容之中介層結構30、及一探針模組40。本實施例與第一實施例大致相同,亦即電容模組C的架構均相同,唯不同之處在於無IC測試座外框限制,所以可在一次探針卡壓測時將多顆IC同時測試,進而可提高測試效率。 Please refer to FIG. 4 , which is a structural diagram of an IC test socket of an integrated capacitor module according to a third embodiment of the present invention. It should be noted that, unlike the previous two embodiments for IC testing after packaging, the IC test socket 100c of the present embodiment is mainly used for IC testing after wafer packaging; as shown in FIG. 4, the IC test socket is shown. The 100c includes a first hub 10, a second hub 20, an interposer 30 having a capacitor, and a probe module 40. This embodiment is substantially the same as the first embodiment, that is, the structure of the capacitor module C is the same, except that there is no limitation of the outer frame of the IC test socket, so that multiple ICs can be simultaneously tested in one probe card. Testing, which in turn increases test efficiency.

〔第四實施例〕 [Fourth embodiment]

請參閱圖5,為本發明第四實施例之整合電容模組之IC測試座的結構示意圖。本實施例之IC測試座100d同第三實施例係用於晶圓式封裝後的IC測試;如圖5所示,IC測試座100d包括一第一針座10、一第二針座20、一具有電容之中介層結構30’、及一探針模組40。本實施例與第二實施大致相同,亦即電容模組C的架構均相同,唯不同之處在於無IC測試座外框限制,所以可在一次探針卡壓測時將多顆IC同時測試,進而可提高測試效率。 Please refer to FIG. 5 , which is a structural diagram of an IC test socket of an integrated capacitor module according to a fourth embodiment of the present invention. The IC test socket 100d of the present embodiment is the same as the third embodiment for the IC test after the wafer package. As shown in FIG. 5, the IC test socket 100d includes a first needle holder 10 and a second needle holder 20. An interposer structure 30' having a capacitance and a probe module 40. This embodiment is substantially the same as the second embodiment, that is, the structure of the capacitor module C is the same, except that there is no IC test box frame limitation, so multiple ICs can be tested simultaneously in one probe card pressure measurement. , in turn, can improve test efficiency.

如上所述,在本發明所有的實施例中,電容模組C之蓄電主體(即電容器C’)均為實體電容,然而本發明並不以此舉例為限,例如,電容模組C之蓄電主體亦可為薄膜式電容,其可採高介電常數材料,並以薄膜加工方式形成,且以內建方式置於中介層主體31之中。具體地說,所述薄膜式電容可由相對設置的第一金屬層及第二金屬層與設置於第一和第二金屬層之間的介電層所構成,其中第一金屬層相當於第一電極,第二金屬層相當於第二電 極。舉凡將電容模組整合於IC測試座內部,均落入本發明的保護範疇。 As described above, in all the embodiments of the present invention, the power storage body (ie, the capacitor C') of the capacitor module C is a solid capacitor, but the invention is not limited by this example, for example, the power storage of the capacitor module C The body may also be a film capacitor, which may be made of a high dielectric constant material and formed in a film processing manner and placed in the interposer body 31 in a built-in manner. Specifically, the thin film capacitor may be composed of a first metal layer and a second metal layer disposed opposite to each other and a dielectric layer disposed between the first and second metal layers, wherein the first metal layer is equivalent to the first Electrode, the second metal layer is equivalent to the second electricity pole. The integration of the capacitor module into the interior of the IC test socket falls within the scope of protection of the present invention.

更進一步來說,所述薄膜式電容可利用壓合、塗佈、印刷、蒸鍍、或濺鍍等製程,並配合利用微影暨蝕刻及電鍍製程產生,厚度可以控制在1μm左右,甚至更薄。可使用於薄膜式電容之高介電常數材料例如:BST或其類似化合物,所述類似化合物可包含以下元素:鍶、鋇、鉛、錫、鋯、鉍、鉭、鈦、鎂、鈮、或其等的組合,具體例包括:Pb(Zr,Ti)O3、Pb(Mg,Nb)O3、SrBi2Ta2O9、ZrO2、Ta2O5等。可使用於薄膜式電容之金屬層的材料例如:鉑、金、銅、鉛、釕、銥、鉻、或其等的組合。 Furthermore, the film capacitor can be processed by pressing, coating, printing, vapor deposition, or sputtering, and can be produced by using a lithography, etching, and electroplating process, and the thickness can be controlled at about 1 μm or even more. thin. A high dielectric constant material such as BST or the like which can be used for a film capacitor, the similar compound may comprise the following elements: lanthanum, cerium, lead, tin, zirconium, hafnium, tantalum, titanium, magnesium, lanthanum, or Specific examples of the combination thereof include Pb(Zr,Ti)O 3 , Pb(Mg,Nb)O 3 , SrBi 2 Ta 2 O 9 , ZrO 2 , Ta 2 O 5 and the like. A material that can be used for the metal layer of the film capacitor is, for example, platinum, gold, copper, lead, antimony, bismuth, chromium, or the like.

〔實施例的可能功效〕 [Possible effects of the examples]

本發明整合電容模組之IC測試座透過“在第一針座與第二針座之間配置一具有電容之中介層結構,其表面設有複數個接觸金屬墊以形成一電容模組”的設計,當應用於封裝後測試或晶圓式封裝後測試時,可將電容的功用配置在最靠近待測IC端的位置,藉此縮短電源供應時間,以提升測試過程中各項測試信號同時做動電流的擷取能力,進而提升晶圓的測試良率及效能。 The IC test socket of the integrated capacitor module of the present invention transmits a "capacitor layer structure having a capacitance between the first needle seat and the second needle seat, and a plurality of contact metal pads are formed on the surface thereof to form a capacitor module" Designed, when applied to post-package test or post-wafer package test, the function of the capacitor can be placed closest to the IC end to be tested, thereby shortening the power supply time to improve the test signals during the test. The ability to draw current and current increases the test yield and performance of the wafer.

以上所述僅為本發明的實施例,其並非用以限定本發明的專利保護範圍。任何熟習相像技藝者,在不脫離本發明的精神與範圍內,所作的更動及潤飾的等效替換,仍為本發明的專利保護範圍內。 The above is only an embodiment of the present invention, and is not intended to limit the scope of the invention. It is still within the scope of patent protection of the present invention to make any substitutions and modifications of the modifications made by those skilled in the art without departing from the spirit and scope of the invention.

100a‧‧‧IC測試座 100a‧‧‧IC test stand

10‧‧‧第一針座 10‧‧‧first needle seat

11‧‧‧第一針盤 11‧‧‧First dial

12‧‧‧第一定位板 12‧‧‧First Positioning Plate

13‧‧‧第一針孔 13‧‧‧first pinhole

20‧‧‧第二針座 20‧‧‧Second hub

21‧‧‧第二定位板 21‧‧‧Second positioning plate

22‧‧‧第二針盤 22‧‧‧Second dial

23‧‧‧第二針孔 23‧‧‧second pinhole

30‧‧‧具有電容之中介層結構 30‧‧‧Intermediate layer structure with capacitance

31‧‧‧中介層主體 31‧‧‧Intermediary body

32‧‧‧第一表面層 32‧‧‧First surface layer

33‧‧‧第二表面層 33‧‧‧Second surface layer

34‧‧‧第一接觸金屬墊 34‧‧‧First contact metal pad

35‧‧‧第二接觸金屬墊 35‧‧‧Second contact metal pad

36‧‧‧導電柱 36‧‧‧conductive column

37‧‧‧通孔 37‧‧‧through hole

C‧‧‧電容模組 C‧‧‧Capacitor Module

C’‧‧‧電容器 C’‧‧‧ capacitor

40‧‧‧探針模組 40‧‧‧ Probe Module

41‧‧‧長探針 41‧‧‧Long probe

42‧‧‧短探針 42‧‧‧Short probe

Claims (10)

一種整合電容模組之IC測試座,包括:一第一針座;一第二針座,該第二針座與該第一針座呈相對設置;一具有電容之中介層結構,該具有電容之中介層結構設置於該第一針座與該第二針座之間,且表面設有複數個接觸金屬墊以形成一電容模組;及一探針模組,包括複數個長探針及複數個短探針,該些長探針貫穿該第一針座、該具有電容之中介層結構、及該第二針座,而該些短探針包括至少一對呈上下分佈的探針,且分別貫穿該第一針座及該第二針座,並與該電容模組串接。 An IC test socket for integrating a capacitor module includes: a first hub; a second hub, the second hub is opposite to the first hub; and an interposer having a capacitance, the capacitor The interposer structure is disposed between the first hub and the second hub, and the surface is provided with a plurality of contact metal pads to form a capacitor module; and a probe module includes a plurality of long probes and a plurality of short probes extending through the first hub, the interposer having a capacitance, and the second hub, and the short probes include at least one pair of probes distributed vertically And passing through the first hub and the second hub respectively, and being connected in series with the capacitor module. 如請求項1所述的整合電容模組之IC測試座,其中該第一針座包括一第一針盤及一設置於該第一針盤內側的第一定位板,該第一針座中具有複數個貫穿該第一針盤及該第一定位板的第一針孔,該第二針座包括一第二針盤及一設置於該第二針盤內側的第二定位板,該第二針座中具有複數個貫穿該第二針盤及該第二定位板的第二針孔。 The IC test socket of the integrated capacitor module of claim 1, wherein the first hub includes a first dial and a first positioning plate disposed inside the first dial, the first hub a plurality of first pinholes extending through the first dial and the first positioning plate, the second hub includes a second dial and a second positioning plate disposed on the inner side of the second dial The second needle seat has a plurality of second pinholes extending through the second dial and the second positioning plate. 如請求項2所述的整合電容模組之IC測試座,其中該些第一針孔與該些第二針孔呈相對設置。 The IC test socket of the integrated capacitor module of claim 2, wherein the first pinholes are disposed opposite to the second pinholes. 如請求項1所述的整合電容模組之IC測試座,其中該具有電容之中介層結構包括一中介層主體及一電容器,而該些接觸金屬墊包括複數個第一接觸金屬墊及複數個第二接觸金屬墊,該些第一接觸金屬墊設置於該中介層主體之一側,該些第二接觸金屬墊設置於該中介層主體之相對另一側,且該電容器與該些第一接觸金屬墊及該些第二接觸金屬墊電性連接。 The IC test socket of the integrated capacitor module of claim 1, wherein the interposer structure having a capacitor comprises an interposer body and a capacitor, and the contact metal pads comprise a plurality of first contact metal pads and a plurality of a second contact metal pad, the first contact metal pads are disposed on one side of the interposer body, the second contact metal pads are disposed on the opposite side of the interposer body, and the capacitor and the first The contact metal pad and the second contact metal pads are electrically connected. 如請求項4所述的整合電容模組之IC測試座,其中該中介層主體包括相對設置的一第一表面層及一第二表面層,該第一表面層位於該中介層主體與該第一針座之間,該些第一接觸金屬 墊間隔地設置於該第一表面層上,該第二表面層位於該中介層主體與該第二針座之間,該些第二接觸金屬墊間隔地設置於該第二表面層上。 The IC test socket of the integrated capacitor module of claim 4, wherein the interposer body comprises a first surface layer and a second surface layer disposed opposite to each other, the first surface layer is located at the interposer body and the first The first contact metal between the needle holders The second surface layer is disposed between the interposer body and the second needle seat, and the second contact metal pads are spaced apart from the second surface layer. 如請求項4所述的整合電容模組之IC測試座,其中該具有電容之中介層結構更包括複數個導電柱,該些導電柱間隔地內埋於該中介層主體之中,且每一個該導電柱分別接觸相對應的一個該第一接觸金屬墊與一個該第二接觸金屬墊。 The IC test socket of the integrated capacitor module of claim 4, wherein the interposer structure having a capacitance further comprises a plurality of conductive pillars, the conductive pillars being buried in the interposer body at intervals, and each The conductive posts respectively contact a corresponding one of the first contact metal pads and one of the second contact metal pads. 如請求項4所述的整合電容模組之IC測試座,其中該電容器係採高介電材料,並以薄膜加工方式形成,且以內建方式置於該中介層主體之中。 The IC test socket of the integrated capacitor module according to claim 4, wherein the capacitor is made of a high dielectric material and formed by film processing, and is placed in the main body of the interposer in a built-in manner. 如請求項5所述的整合電容模組之IC測試座,其中該電容器設置於該第一表面層上,且該電容器透過焊接連接於相鄰的兩個該第一接觸金屬墊上。 The IC test socket of the integrated capacitor module of claim 5, wherein the capacitor is disposed on the first surface layer, and the capacitor is connected to the adjacent two of the first contact metal pads by soldering. 如請求項1所述的整合電容模組之IC測試座,其中該些長探針不與該具有電容之中介層結構產生信號連結,該探針模組的該些短探針用於與該具有電容之中介層結構形成迴路,同時儲蓄電以提供測試時所需的電流。 The IC test socket of the integrated capacitor module according to claim 1, wherein the long probes do not generate a signal connection with the interposer structure having a capacitance, and the short probes of the probe module are used for The interposer structure with capacitance forms a loop while conserving electricity to provide the current required for testing. 如請求項9所述的整合電容模組之IC測試座,其中該些短探針以其探針尖與該具有電容之中介層結構的該些接觸金屬墊連接以形成迴路。 The IC test socket of the integrated capacitor module according to claim 9, wherein the short probes are connected with the contact metal pads of the capacitor having an interposer structure to form a loop.
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