TWI582249B - Copper alloy sheet and method of manufacturing the same - Google Patents

Copper alloy sheet and method of manufacturing the same Download PDF

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TWI582249B
TWI582249B TW101115440A TW101115440A TWI582249B TW I582249 B TWI582249 B TW I582249B TW 101115440 A TW101115440 A TW 101115440A TW 101115440 A TW101115440 A TW 101115440A TW I582249 B TWI582249 B TW I582249B
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rolling
copper alloy
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TW201303048A (en
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Takemi Isomatsu
Hiroshi Kaneko
Koji Sato
Tatsuhiko Eguchi
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Furukawa Electric Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/10Alloys based on copper with silicon as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/10Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/02Single bars, rods, wires, or strips

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)

Description

銅合金板材及其製造方法 Copper alloy sheet and manufacturing method thereof

本發明係關於一種應用於電氣、電子機器用之引線框架、連接器、端子材、繼電器、開關、插座等之銅合金板材及其製造方法。 The present invention relates to a copper alloy sheet material for a lead frame, a connector, a terminal material, a relay, a switch, a socket, and the like for use in an electric or electronic machine, and a method of manufacturing the same.

用於電氣、電子機器用途之銅合金材料所要求之特性項目有導電率、保證應力(降伏應力)、拉伸強度、彎曲加工性、耐應力緩和特性等。近年來,隨著電氣、電子機器之小型化、輕量化、高功能化、高密度構裝化、或使用環境之高溫化,對於該等特性所要求之水準不斷提高。 The properties required for copper alloy materials used in electrical and electronic applications include electrical conductivity, guaranteed stress (falling stress), tensile strength, bending workability, and stress relaxation resistance. In recent years, with the miniaturization, weight reduction, high functionality, high-density construction of electrical and electronic equipment, and the high temperature of the use environment, the level required for these characteristics has been increasing.

先前,電氣、電子機器用材料,通常除鐵系材料以外,亦廣泛使用有磷青銅、紅黃銅、黃銅等銅系材料。該等合金藉由Sn或Zn之固溶強化與利用壓延或拉線等冷加工之加工硬化組合而提升強度。於該方法中,導電率不充分,又,由於藉由施加高壓延率之冷加工而獲得高強度,故而彎曲加工性或耐應力緩和特性不充分。 Conventionally, materials for electrical and electronic equipment have been widely used in addition to iron-based materials, such as copper bronze, red brass, and brass. These alloys are strengthened by solid solution strengthening of Sn or Zn in combination with work hardening by cold working such as calendering or drawing. In this method, the electrical conductivity is insufficient, and since high strength is obtained by cold working by applying a high-pressure rate, the bending workability or the stress relaxation resistance is insufficient.

代替其之強化法,有使微細之第二相於材料中析出的析出強化法。該強化方法具有提高強度並且同時提升導電率之優勢,故而於多數之合金系中進行。然而,隨著近來之電子機器或汽車所使用之零件小型化,銅合金逐漸對更高強度之材料實施更小半徑之彎曲加工,強烈要求彎曲加工性優異之銅合金板材。進而,即便為具有高強度、高彈性及良好之彎曲加工性的板材,於壓延平行方向及壓延垂 直方向上存在特性差一事亦不佳,重要的是於任何方向均顯示良好之特性。尤其是用作超小型端子時,於窄寬度內對接腳模實施微細加工,於此處同樣重要的是於任一方向均顯示良好之特性。於先前之Cu-Ni-Si系銅合金中,為了獲得較高之強度,可提高壓延率而獲得較大之加工硬化,但該方法如上所述,會使彎曲加工性劣化,難以兼顧高強度與良好之彎曲加工性。 Instead of the strengthening method, there is a precipitation strengthening method in which a fine second phase is precipitated in a material. This strengthening method has the advantage of increasing the strength and simultaneously increasing the conductivity, and thus is carried out in most alloy systems. However, with the recent miniaturization of parts used in electronic machines or automobiles, copper alloys have gradually subjected to bending processing of materials having higher radii to higher strength materials, and copper alloy sheets having excellent bending workability are strongly required. Furthermore, even in the case of a sheet having high strength, high elasticity, and good bending workability, it is in the parallel direction of rolling and rolling. It is also not good to have poor characteristics in the straight direction. It is important to show good characteristics in any direction. In particular, when used as an ultra-small terminal, the butt mold is subjected to microfabrication in a narrow width, and it is also important here to exhibit good characteristics in either direction. In the conventional Cu-Ni-Si-based copper alloy, in order to obtain high strength, the rolling rate can be increased to obtain a large work hardening, but as described above, the bending workability is deteriorated, and it is difficult to achieve high strength. With good bending workability.

針對該提升彎曲加工性之要求,已有若干藉由控制結晶方位來解決之提案。例如,於Cu-Ni-Si系銅合金中有如下提案。於專利文獻1揭示有於Cu-Ni-Si系銅合金中,在如結晶粒徑與來自{311}、{220}、{200}面之X射線繞射強度I滿足某條件之結晶方位之情形時,彎曲加工性優異。又,於專利文獻2揭示有於Cu-Ni-Si系銅合金中,於來自{200}面及{220}面之X射線繞射強度滿足某條件之結晶方位之情形時,彎曲加工性優異。又,於專利文獻3揭示有於Cu-Ni-Si系銅合金中,藉由將立方(cube)方位{001}<100>之比例控制於50%以下來使彎曲加工性優異。於專利文獻4揭示有於Cu-Ni-Si系銅合金中,利用較強之冷加工使處於應變狀態之結晶組織再結晶而變為異向性小之結晶組織,並且藉由提高延伸率來使彎曲加工性變良好。於專利文獻5揭示有於Cu-Ni-Si系銅合金中,藉由將結晶粒徑與立方方位{001}<100>之比例控制為20~60%來使強度異向性較小且彎曲加工性優異。於專利文獻6揭示有於Cu-Ni-Si系銅合金中,藉由將結晶粒徑與立方 方位{001}<100>之比例控制為5~50%而無損機械強度、導電率或彎曲加工性且提升疲勞特性。 In response to the demand for improved bending workability, there have been several proposals for solving the problem by controlling the crystal orientation. For example, in the Cu-Ni-Si copper alloy, there are the following proposals. Patent Document 1 discloses that in a Cu-Ni-Si-based copper alloy, the crystal grain size and the X-ray diffraction intensity I from the {311}, {220}, and {200} planes satisfy the crystal orientation of a certain condition. In the case, the bending workability is excellent. Further, in the case of the Cu-Ni-Si-based copper alloy, the X-ray diffraction intensity from the {200} plane and the {220} plane satisfies the crystal orientation of a certain condition, and the bending workability is excellent. . Moreover, in the Cu-Ni-Si-based copper alloy, it is disclosed that the bending workability is excellent by controlling the ratio of the cube orientation {001}<100> to 50% or less. Patent Document 4 discloses that in a Cu-Ni-Si-based copper alloy, a crystal structure in a strained state is recrystallized by a relatively strong cold working to become a crystal structure having a small anisotropy, and the elongation is improved by increasing the elongation. The bending workability becomes good. Patent Document 5 discloses that in the Cu-Ni-Si-based copper alloy, the ratio of the crystal grain size to the cubic orientation {001}<100> is controlled to 20 to 60%, so that the intensity anisotropy is small and curved. Excellent processability. Patent Document 6 discloses that in a Cu-Ni-Si-based copper alloy, by crystal grain size and cubic The ratio of the orientation {001}<100> is controlled to 5 to 50% without loss of mechanical strength, electrical conductivity or bending workability and improvement of fatigue characteristics.

於專利文獻1及專利文獻2所記載之發明中,來自特定面之X射線繞射的結晶方位之分析係關於具有某寬度之結晶方位之分佈中極其一部分特定之面。又,於專利文獻3所記載之發明中,結晶方位之控制係藉由降低固溶熱處理後之壓延加工率來進行。又,未記載立方方位晶粒之面積、分散性,且關於彎曲加工性、強度之異向性亦無揭示。於專利文獻4所記載之發明中,利用較強之冷壓延使處於應變狀態之結晶組織再結晶來實現異向性較小之結晶組織,並藉由提高延伸率來實現良好之彎曲加工性,但未進行利用結晶方位控制之特性改善。於專利文獻5所記載之發明中,藉由調整固溶處理前之冷壓延中的軋縮率、固溶處理中之升溫速度等步驟而使立方方位聚集,並降低強度及彎曲加工性中之異向性。然而於專利文獻5中,由於固溶處理中之升溫速度慢,故而其升溫時間較長,其結果,立方方位晶粒粗大,並且立方方位晶粒之等分散性較差,強度之異向性亦較大。又,於專利文獻6所記載之發明中,藉由以85~99.8%之高軋縮率進行固溶處理前之冷壓延,並調整其後之固溶處理中之加熱溫度及保持時間,從而使立方方位聚集並提升疲勞特性。然而於專利文獻6中,固溶處理之結果為所獲得之立方方位晶粒粗大,並且立方方位晶粒之等分散性較差,強度之異向性亦較大。 In the inventions described in Patent Document 1 and Patent Document 2, the analysis of the crystal orientation of the X-ray diffraction from a specific surface is a particularly specific surface in the distribution of the crystal orientation having a certain width. Moreover, in the invention described in Patent Document 3, the control of the crystal orientation is performed by reducing the calendering rate after the solution heat treatment. Further, the area and dispersibility of the cubic azimuth crystal grains are not described, and the anisotropy of the bending workability and the strength is not disclosed. In the invention described in Patent Document 4, the crystal structure in a strain state is recrystallized by a relatively strong cold rolling to realize a crystal structure having a small anisotropy, and the elongation is improved to achieve good bending workability. However, the improvement in characteristics by the crystal orientation control has not been performed. In the invention described in Patent Document 5, the cubic azimuth is aggregated by adjusting the rolling reduction ratio in the cold rolling before the solution treatment and the temperature increase rate in the solution treatment, and the strength and the bending workability are lowered. Anisotropy. However, in Patent Document 5, since the temperature rise rate in the solution treatment is slow, the temperature rise time is long, and as a result, the cubic azimuth crystal grains are coarse, and the cubic orientation crystal grains are poorly dispersed, and the intensity anisotropy is also poor. Larger. Further, in the invention described in Patent Document 6, the cold rolling before the solution treatment is performed at a high reduction ratio of 85 to 99.8%, and the heating temperature and the holding time in the subsequent solution treatment are adjusted. Aggregate the cubic orientation and improve fatigue characteristics. However, in Patent Document 6, the result of the solution treatment is that the obtained cubic azimuth crystal grains are coarse, and the dispersibility of the cubic azimuth crystal grains is poor, and the anisotropy of the strength is also large.

又,用於電氣、電子機器用途之銅合金材料所要求之 特性項目之一,要求楊氏模數(縱彈性係數)較低。近年來,隨著連接器等電子零件之小型化的進展,對端子之尺寸精度或加壓加工之公差的要求變得嚴格。藉由降低材料之楊氏模數,可降低尺寸變動對接觸壓力之影響,故而可使設計變得容易。於楊氏模數之測定中,有如下兩種方法:根據利用拉伸試驗而得之應力-應變線圖之彈性區域之斜率來算出之方法,根據使梁(懸臂梁)彎曲時之應力-應變線圖之彈性區域之斜率來算出之方法。 Also required for copper alloy materials used in electrical and electronic equipment applications One of the characteristic items requires a Young's modulus (longitudinal coefficient of elasticity) to be low. In recent years, as the miniaturization of electronic components such as connectors has progressed, the requirements for the dimensional accuracy of the terminals or the tolerances of the press working have become strict. By reducing the Young's modulus of the material, the influence of the dimensional change on the contact pressure can be reduced, so that the design can be made easy. In the measurement of the Young's modulus, there are two methods: a method of calculating the slope of the elastic region of the stress-strain line graph obtained by the tensile test, and the stress according to the bending of the beam (cantilever beam) - The method of calculating the slope of the elastic region of the strain line diagram.

[專利文獻1]日本特開2006-009137號公報 [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-009137

[專利文獻2]日本特開2008-013836號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-013836

[專利文獻3]日本特開2006-283059號公報 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2006-283059

[專利文獻4]日本特開2005-350695號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2005-350695

[專利文獻5]日本特開2011-162848號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2011-162848

[專利文獻6]日本特開2011-012321號公報 [Patent Document 6] Japanese Patent Publication No. 2011-012321

鑒於如上所述之先前技術之問題點,本發明之課題在於提供一種彎曲加工性優異,具有優異之強度,各特性於壓延平行方向與壓延垂直方向之異向性較少,且適用於電氣、電子機器用之引線框架、連接器、端子材等,及汽車車載用等之連接器或端子材、繼電器、開關等的銅合金板材。又,將提供適於獲得上述銅合金板材之製造方法作為另一課題。 In view of the problems of the prior art as described above, an object of the present invention is to provide an excellent bending workability and excellent strength, and each of the characteristics has less anisotropy in the rolling parallel direction and the rolling vertical direction, and is suitable for electrical, Lead frame, connector, terminal material for electronic equipment, etc., and copper alloy plate materials such as connectors or terminal materials for automobiles, relays, switches, etc. Further, a method for producing a copper alloy sheet material as described above is provided as another subject.

本發明人等針對適用於電氣、電子機器用途之銅合金進行潛心研究,發現於Cu-Ni-Si系之銅合金板材中,為 了大幅提升彎曲加工性、強度、導電性,而於立方方位之聚集比例與彎曲加工性方面存在相關性。又,於具有該結晶方位及特性之銅合金板材中,發現具有進一步提升強度之作用的合金組成,此外,發現了下述銅合金板材,係:於本合金系中添加了具有可無損導電率或彎曲加工性而提升強度之作用的元素。又,為了實現如上所述之結晶方位,基於立方方位之聚集比例與彎曲加工性具有相關性,發現具有特定之步驟而成之製造方法。本發明係基於該等見解進行研究,結果得以完成者。 The inventors of the present invention conducted intensive studies on copper alloys suitable for use in electrical and electronic equipment, and found them in Cu-Ni-Si copper alloy sheets. The bending workability, strength, and electrical conductivity are greatly improved, and the aggregation ratio in the cubic orientation is correlated with the bending workability. Further, in the copper alloy sheet material having the crystal orientation and characteristics, an alloy composition having an effect of further increasing the strength was found, and in addition, the following copper alloy sheet material was found, which was added to the alloy system to have a lossless electrical conductivity. Or an element that bends the workability and enhances the strength. Further, in order to realize the crystal orientation as described above, the aggregation ratio based on the cubic orientation has a correlation with the bending workability, and a manufacturing method having a specific step has been found. The present invention is based on these findings and the results are completed.

即,依據本發明,提供以下手段。 That is, according to the present invention, the following means are provided.

(1)一種銅合金板材,其具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si,且剩餘部分由銅及不可避免之雜質構成;於利用電子背向散射繞射法之結晶方位分析中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之面積率為5%以上50%以下,具有自立方方位{001}<100>偏移15°以內之方位的晶粒於60μm見方內分散40個以上100個以下。 (1) A copper alloy sheet material having a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less of Si, and the balance being composed of copper and unavoidable impurities; In the crystal orientation analysis using the electron backscatter diffraction method, the area ratio of the crystal grains having an orientation within 15 degrees from the cubic orientation {001}<100> is 5% or more and 50% or less, and has a self-cubic orientation { 001}<100> The crystal grains having an orientation within a range of 15° or less are dispersed in 40 or more and 100 or less in a 60 μm square.

(2)一種銅合金板材,其具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si、合計為0.005質量%以上1.0質量%以下之選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一者,且剩餘部分由銅及不可避免之雜質構成;且 於利用電子背向散射繞射法之結晶方位分析中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之面積率為5%以上50%以下,具有自立方方位{001}<100>偏移15°以內之方位的晶粒於60μm見方內分散40個以上100個以下。 (2) A copper alloy sheet material having a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less of Si, and a total of 0.005% by mass or more and 1.0% by mass or less selected from the group consisting of At least one of the group consisting of Sn, Zn, Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf, and the remainder consisting of copper and unavoidable impurities; In the crystal orientation analysis using the electron backscatter diffraction method, the area ratio of the crystal grains having an orientation within 15 degrees from the cubic orientation {001}<100> is 5% or more and 50% or less, and has a self-cube orientation. {001}<100> The crystal grains having an orientation within a range of 15° or less are dispersed in 40 or more and 100 or less in a 60 μm square.

(3)如上述(1)或(2)之銅合金板材,其中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之平均晶粒面積為1.8μm2以上45.0μm2以下。 (3) The copper alloy sheet according to (1) or (2) above, wherein the average crystal grain size of the crystal grains having an orientation within 15 degrees from the cubic orientation {001}<100> is 1.8 μm 2 or more and 45.0. Below μm 2 .

(4)如上述(1)至(3)中任一項之銅合金板材,其中,母材之晶粒的平均晶粒面積為50μm2以下。 (4) The copper alloy sheet material according to any one of the above (1) to (3), wherein the crystal grains of the base material have an average crystal grain size of 50 μm 2 or less.

(5)如上述(1)至(4)中任一項之銅合金板材,其中,壓延平行方向之彎曲係數與壓延垂直方向之彎曲係數的差以絕對值計為10GPa以下,壓延平行方向之保證應力與壓延垂直方向之保證應力的差以絕對值計為10MPa以下。 (5) The copper alloy sheet material according to any one of (1) to (4), wherein a difference between a bending coefficient in a rolling parallel direction and a bending coefficient in a rolling perpendicular direction is 10 GPa or less in absolute value, and the rolling is parallel. The difference between the guaranteed stress and the guaranteed stress in the vertical direction of the rolling is 10 MPa or less in absolute value.

(6)一種銅合金板材之製造方法,對鑄造銅合金原材料而得之鑄塊實施均質化熱處理及熱壓延,進而於藉由冷壓延成形為薄板後,實施使上述薄板中之溶質原子再固溶之中間固溶熱處理;上述銅合金原材料係具有上述(1)項或(2)項中之銅合金板材的合金組成而成,該銅合金板材之製造方法依序包含下述各步驟而成:於800℃以上1020℃以下進行3分鐘至10小時上述均質化熱處理, 以壓延率為80%以上99.8%以下進行上述冷壓延後,於未達再結晶溫度即400℃以上700℃以下之溫度進行5秒至20小時之中間退火,進而於加熱至100℃以上400℃以下後,於該溫度下進行壓延率為5%以上50%以下之中間溫壓延,然後於600℃以上1000℃以下進行5秒至1小時之上述中間固溶熱處理,於400℃以上700℃以下進行5分鐘至10小時之時效析出熱處理。 (6) A method for producing a copper alloy sheet, wherein the ingot obtained by casting the copper alloy material is subjected to homogenization heat treatment and hot rolling, and further formed into a thin plate by cold rolling, and then the solute atom in the sheet is further subjected to The intermediate solution heat treatment of the solid solution; the copper alloy raw material is composed of the alloy composition of the copper alloy sheet material in the above item (1) or (2), and the method for producing the copper alloy sheet includes the following steps in sequence Formation: The above homogenization heat treatment is performed at 800 ° C or more and 1020 ° C or less for 3 minutes to 10 hours. After the cold rolling is performed at a rolling ratio of 80% or more and 99.8% or less, the intermediate annealing is performed for 5 seconds to 20 hours at a temperature not lower than the recrystallization temperature, that is, 400 ° C to 700 ° C, and further heated to 100 ° C or higher and 400 ° C. After that, the intermediate temperature rolling is performed at a temperature of 5% or more and 50% or less at this temperature, and then the intermediate solution heat treatment is performed at 600 ° C to 1000 ° C for 5 seconds to 1 hour, and the temperature is 400 ° C or more and 700 ° C or less. The aging precipitation heat treatment is performed for 5 minutes to 10 hours.

根據本發明之銅合金板材,可提供一種彎曲加工性優異、顯示優異之強度、且各特性於壓延平行方向與壓延垂直方向之異向性較少之銅合金板材。因此,可提供一種具有尤其適用於電氣、電子機器用之引線框架、連接器、端子材等,及汽車車載用等之連接器或端子材、繼電器、開關等之特性的銅合金板材。 According to the copper alloy sheet material of the present invention, it is possible to provide a copper alloy sheet material which is excellent in bending workability, exhibits excellent strength, and has different anisotropy in each of the rolling parallel direction and the rolling perpendicular direction. Therefore, it is possible to provide a copper alloy sheet material having characteristics such as a lead frame, a connector, a terminal material, and the like which are particularly suitable for electric and electronic equipment, and a connector or a terminal material, a relay, a switch, and the like for an automobile or the like.

又,根據本發明之製造方法,可較佳地製造上述銅合金板材。 Further, according to the production method of the present invention, the above copper alloy sheet material can be preferably produced.

本發明之上述及其他特徵以及優點係參照適當附隨之圖式並根據下述記載而明確。 The above and other features and advantages of the invention will be apparent from the description and appended claims

針對本發明之銅合金板材較佳之一實施形態進行說明。再者,本發明中之「板材」亦包含「條材」。 A preferred embodiment of the copper alloy sheet of the present invention will be described. Furthermore, the "sheet" in the present invention also includes "bar".

本發明之銅合金板材具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之 Si,且剩餘部分由銅及不可避免之雜質構成。較佳為將Ni設為3.0質量%以上5.0質量%以下,將Si設為0.5質量%以上2.0質量%以下。尤佳為將Ni設為4.0質量%以上,將Si設為1.0質量%以上。 The copper alloy sheet material of the present invention has a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less. Si, and the remainder is composed of copper and unavoidable impurities. Ni is preferably 3.0% by mass or more and 5.0% by mass or less, and Si is 0.5% by mass or more and 2.0% by mass or less. It is particularly preferable to set Ni to 4.0% by mass or more and Si to 1.0% by mass or more.

又,於利用電子背向散射繞射法之結晶方位分析中,立方方位{001}<100>之面積率(以下有時亦稱為立方方位面積率)為5%以上50%以下,較佳為10%以上45%以下,更佳為15%以上40%以下,尤佳為20%以上35%以下。 Further, in the crystal orientation analysis by the electron backscatter diffraction method, the area ratio of the cubic orientation {001}<100> (hereinafter sometimes referred to as the cubic azimuth area ratio) is 5% or more and 50% or less, preferably. It is 10% or more and 45% or less, more preferably 15% or more and 40% or less, and particularly preferably 20% or more and 35% or less.

或亦可將銅合金板材設為含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si,且含有合計為0.005質量%以上1.0質量%以下之選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一者。選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一者之合計較佳為0.01質量%以上0.9質量%以下,更佳為0.03質量%以上0.8質量%以下,尤佳為0.05質量%以上0.5質量%以下。於該情形時,Ni及Si之較佳含量、尤佳含量、及立方方位面積率之較佳範圍、尤佳範圍與上述範圍相同。 In addition, the copper alloy sheet may contain 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less of Si, and may be contained in a total amount of 0.005% by mass or more and 1.0% by mass or less, selected from the group consisting of Sn and Zn. At least one of a group consisting of Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf. The total of at least one selected from the group consisting of Sn, Zn, Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf is preferably 0.01% by mass or more and 0.9% by mass or less, more preferably 0.03% by mass. % or more is 0.8% by mass or less, and particularly preferably 0.05% by mass or more and 0.5% by mass or less. In this case, a preferred range of the preferable content, a particularly preferable content, and a cubic azimuthal area ratio of Ni and Si, and a particularly preferable range are the same as the above range.

又,於上述各銅合金板材中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之平均晶粒面積較佳為1.8μm2以上45.0μm2以下,更佳為3.8μm2以上36.0m2以下。進而較佳為6.0μm2以上28.8μm2以下,尤佳為10.0μm2以上25.0μm2以下。 Further, in each of the copper alloy sheet material having self-standing side orientation {001} <100> of the average grain area of crystal grains of less than 15 ° offset orientation of 1.8 m 2 or more is preferably 2 or less 45.0μm, more preferably 3.8μm 2 or less than 2 36.0m. 6.0 m 2 or more and further preferably 2 or less 28.8μm, and particularly preferably 2 or less than 10.0 m 2 25.0μm.

於本說明書中,亦有時省略具有自立方方位 {001}<100>偏移15°以內之方位的晶粒之平均晶粒面積而稱為立方方位面積率或立方方位{001}<100>之面積率等。又,亦有時省略具有自立方方位{001}<100>偏移15°以內之方位的晶粒而稱為立方方位晶粒或立方方位{001}<100>之晶粒等。 In this specification, it is sometimes omitted to have a self-cube orientation. {001}<100> The average crystal grain area of the crystal grains with an orientation within 15° is called the cubic azimuth area ratio or the area ratio of the cubic azimuth {001}<100>. Further, the crystal grains having azimuth within a range of 15° from the cubic orientation {001}<100> are sometimes omitted, and are referred to as cubic azimuth grains or crystal grains having a cubic orientation {001}<100>.

含有立方方位之晶粒的母材之平均晶粒面積較佳為40μm2以下,進而較佳為5~30μm2。根據板材平面之300×300μm之範圍中的EBSD(Electron Back Scatter Diffraction,電子背向散射繞射)測定結果算出晶粒面積之平均值,設為平均晶粒面積。 The average crystal grain area of the base material containing crystal grains of cubic orientation is preferably 40 μm 2 or less, and more preferably 5 to 30 μm 2 . The average value of the crystal grain area was calculated from the measurement results of EBSD (Electron Back Scatter Diffraction) in the range of 300 × 300 μm of the sheet plane, and the average crystal grain area was obtained.

進而,於利用電子背向散射繞射法之結晶方位分析中,立方方位{001}<100>之晶粒於60μm見方內分佈40個以上100個以下且具有等分散性。該立方方位{001}<100>之晶粒於60μm見方內較佳為分佈45個以上95個以下並具有等分散性,特佳為分佈50個以上90個以下並具有等分散性。 Further, in the crystal orientation analysis by the electron backscatter diffraction method, crystal grains having a cubic orientation {001}<100> are distributed in 40 or less and 100 or less in 60 μm square and have uniform dispersibility. The crystal grains of the cubic orientation {001}<100> are preferably distributed in a range of 45 or more and 95 or less in a 60 μm square and have an isodispersity, and particularly preferably have a distribution of 50 or more and 90 or less and have an isodispersity.

又,進而,關於壓延平行方向及壓延垂直方向之彎曲加工性,較佳為不會因1mm寬度以下之窄寬度彎曲加工中之180°U密合彎曲而於彎曲加工表面產生龜裂。 Further, it is preferable that the bending workability in the rolling parallel direction and the rolling vertical direction is not caused by the 180° U-tight bending in the narrow width bending process of 1 mm width or less, and cracking occurs on the curved surface.

進而,又,壓延平行方向(//)之彎曲係數與壓延垂直方向(⊥)之彎曲係數之差以絕對值計較佳為10GPa以下,更佳為8GPa以下,尤佳為5GPa以下。壓延平行方向之保證應力與壓延垂直方向之保證應力之差以絕對值計較佳為10MPa以下,更佳為8MPa以下,尤佳為5MPa以下。 該等之差,均為越小則表示等方性越高,故而較佳。理想而言,該等之差均為0(Zero),即,最佳為壓延平行方向及壓延垂直方向之值相同。 Further, the difference between the bending coefficient in the rolling parallel direction (//) and the bending coefficient in the rolling perpendicular direction (⊥) is preferably 10 GPa or less, more preferably 8 GPa or less, and particularly preferably 5 GPa or less in absolute value. The difference between the guaranteed stress in the rolling parallel direction and the guaranteed stress in the vertical direction of the rolling is preferably 10 MPa or less, more preferably 8 MPa or less, and particularly preferably 5 MPa or less in absolute value. The smaller the difference, the smaller the isotropic property, so it is preferable. Ideally, the difference between these is 0 (Zero), that is, the value of the rolling parallel direction and the rolling vertical direction are preferably the same.

本發明之銅合金板材於立方方位{001}<100>之面積率及其平均晶粒面積、及進而較佳為與母材之平均晶粒面積均為上述範圍內時,不因180°U密合彎曲於彎曲部之頂點產生龜裂,而可獲得良好之彎曲特性,且彎曲異向性及保證應力異向性變小。另一方面,於上述面積率過小之情形時或平均晶粒面積過大之情形,或者於母材之平均晶粒面積過大之情形時,變得易於在彎曲部之頂點產生龜裂而無法獲得良好之彎曲特性,且彎曲異向性及保證應力異向性變大。 When the area ratio of the cubic alloy {001}<100> and the average crystal grain area thereof, and further preferably the average crystal grain area of the base material are both within the above range, the copper alloy sheet of the present invention is not caused by 180°U. The tightness is bent at the apex of the curved portion to cause cracking, and good bending characteristics are obtained, and the bending anisotropy and the stress anisotropy are ensured to be small. On the other hand, when the area ratio is too small or the average crystal grain size is too large, or when the average crystal grain size of the base material is too large, cracks are likely to occur at the apex of the bent portion, and good results cannot be obtained. The bending property, and the bending anisotropy and the guaranteed stress anisotropy become large.

本發明之銅合金板材含有1.0質量%~5.0質量%之Ni、0.1質量%~2.0質量%之Si。藉此,Ni-Si系化合物(Ni2Si相)析出於Cu基材中而提升強度及導電性。另一方面,若Ni之含量過少則無法獲得強度,若過多則鑄造時或熱加工時產生無助於強度提升之析出而無法獲得與添加量相當之強度,進而熱加工性及彎曲加工性下降。又,由於Si與Ni形成Ni2Si相,故而若Ni量確定則Si添加量確定,但若Si量過少則無法獲得強度,若Si量過多則產生與Ni量過多之情形相同的問題。因此,Ni及Si之添加量較佳為設為上述範圍。 The copper alloy sheet material of the present invention contains 1.0% by mass to 5.0% by mass of Ni and 0.1% by mass to 2.0% by mass of Si. Thereby, the Ni-Si-based compound (Ni 2 Si phase) is precipitated in the Cu substrate to improve strength and conductivity. On the other hand, if the content of Ni is too small, strength cannot be obtained, and if it is too large, precipitation at the time of casting or hot working does not contribute to strength improvement, and strength equivalent to the amount of addition cannot be obtained, and hot workability and bending workability are lowered. . Further, since Si and Ni form a Ni 2 Si phase, the amount of Si added is determined when the amount of Ni is determined. However, if the amount of Si is too small, strength cannot be obtained, and if the amount of Si is too large, the same problem as in the case where the amount of Ni is excessive is generated. Therefore, the addition amount of Ni and Si is preferably set to the above range.

繼而,對立方方位{001}<100>之面積率進行說明。 Next, the area ratio of the cubic orientation {001}<100> will be described.

為了改善銅合金板材之彎曲加工性,本發明人等針對 產生於彎曲加工部之龜裂的產生原因進行了調查。其結果,確認其原因在於:塑性變形局部發展而形成剪切變形帶,因局部之加工硬化而產生微孔之生成及連接,從而達到成形極限。作為其對策,發現提高不易於彎曲變形中產生加工硬化之結晶方位的比例是有效的。即,發現如上所述於立方方位{001}<100>之面積率為5%以上50%以下之情形時,顯示良好之彎曲加工性。 In order to improve the bending workability of a copper alloy sheet, the present inventors directed The cause of the crack generated in the bent portion was investigated. As a result, it was confirmed that the plastic deformation was locally developed to form a shear deformation zone, and the formation and connection of the micropores were caused by local work hardening, thereby achieving the forming limit. As a countermeasure against this, it has been found that it is effective to increase the ratio of the crystal orientation in which work hardening is not easily caused by bending deformation. In other words, when the area ratio of the cubic orientation {001}<100> is 5% or more and 50% or less as described above, it is found that good bending workability is exhibited.

於立方方位{001}<100>之面積率為上述範圍內之情形時,可充分發揮上述作用效果。又,即便不以較低之壓延率進行再結晶處理後之冷壓延加工,藉由於上述範圍內,強度亦不會明顯降低,故而較佳。即,可於不使強度明顯降低之情形下以較高之壓延率進行再結晶處理後之冷壓延加工。另一方面,於立方方位{001}<100>之面積率過低之情形時,彎曲加工性劣化,相反地,於立方方位{001}<100>之面積率過高之情形時,強度降低。因此,就上述觀點而言,將立方方位{001}<100>之面積率設為5%以上50%以下,較佳之範圍為10%以上45%以下,更佳之範圍為15%以上40%以下,尤佳之範圍為20%以上35%以下。 When the area ratio of the cubic orientation {001}<100> is within the above range, the above-described effects can be sufficiently exerted. Further, even if the cold calendering after the recrystallization treatment is not carried out at a low rolling ratio, the strength is not significantly lowered within the above range, which is preferable. That is, the cold rolling process after the recrystallization treatment can be performed at a high rolling ratio without significantly lowering the strength. On the other hand, when the area ratio of the cubic azimuth {001}<100> is too low, the bending workability is deteriorated, and conversely, when the area ratio of the cubic azimuth {001}<100> is too high, the strength is lowered. . Therefore, from the above viewpoints, the area ratio of the cubic orientation {001}<100> is 5% or more and 50% or less, preferably 10% or more and 45% or less, and more preferably 15% or more and 40% or less. The range of the best is 20% or more and 35% or less.

繼而,對上述範圍之立方方位以外之方位進行說明。於本發明之銅合金板材中,產生S方位{3 2 1}<4 3 6>、銅(copper)方位{1 2 1}<1-1 1>、D方位{4 11 4}<11-8 11>、黃銅(brass)方位{1 1 0}<1-1 2>、高斯(Goss)方位{1 1 0}<0 0 1>、RDW方位{1 0 2}<0 1 0>等。關於該等方位成分,只要相對於所觀測之所有方位之面積,立方方位面積率於 上述之範圍內,則可被容許。 Next, the orientation other than the cubic orientation of the above range will be described. In the copper alloy sheet of the present invention, the S orientation {3 2 1}<4 3 6>, the copper orientation {1 2 1}<1-1 1>, and the D orientation {4 11 4}<11- are generated. 8 11>, brass (brass) orientation {1 1 0}<1-1 2>, Goss orientation {1 1 0}<0 0 1>, RDW orientation {1 0 2}<0 1 0> Wait. Regarding the azimuthal components, the cubic azimuth area ratio is as long as the area of all the azimuths observed Within the above range, it can be tolerated.

如上所述,於本發明中之上述結晶方位之分析中使用電子背向散射繞射分析(以下記為EBSD)法。所謂EBSD法,係Electron BackScatter Diffraction之縮寫,其係使用「於掃描電子顯微鏡(SEM)內對試樣表面之1點照射電子束時所產生之反射電子繞射圖案(EBSP,electron back-scattering pattern)」來分析局部區域之結晶方位或結晶構造的結晶方位分析技術。 As described above, an electron backscatter diffraction analysis (hereinafter referred to as EBSD) method is used in the analysis of the above crystal orientation in the present invention. The EBSD method is an abbreviation of Electron BackScatter Diffraction, which uses an electron back-scattering pattern (EBSP) generated by irradiating an electron beam to a point on a surface of a sample in a scanning electron microscope (SEM). ) to analyze the crystal orientation of a local region or the crystal orientation analysis technique of a crystalline structure.

對含有200個晶粒以上之1mm見方之試樣面積以0.1μm之步進(step)進行掃描並分析結晶方位。根據試樣之晶粒之大小而將測定面積設為300μm×300μm。各方位之面積率係具有自立方方位{001}<100>之理想方位偏移15°以內之方位的晶粒之面積相對於總測定面積之比例。於利用EBSD法之方位分析中所獲得之資訊包含電子束穿透試樣至數10nm深度之方位資訊,但相對於所測定之寬度而言十分小,故而於本說明書中記載為面積率。又,由於方位分佈於板厚方向變化,故而利用EBSD法之方位分析較佳為於板厚方向任意選取若干點並取平均值。於本申請案中只要未特別說明,則將以上述方式測定而得者稱為具有某結晶方位之結晶面的面積率。 The area of the sample containing 1 mm square of 200 grains or more was scanned in a step of 0.1 μm and the crystal orientation was analyzed. The measurement area was set to 300 μm × 300 μm in accordance with the size of the crystal grains of the sample. The area ratio of each azimuth is a ratio of the area of the crystal grains having an orientation within a range of 15° from the ideal azimuth of the cubic azimuth {001}<100> with respect to the total measured area. The information obtained in the orientation analysis using the EBSD method includes the orientation information of the electron beam penetrating sample to a depth of several 10 nm, but is very small with respect to the measured width, and thus is described as an area ratio in the present specification. Further, since the azimuth distribution varies in the direction of the plate thickness, it is preferable to use the EBSD method for the orientation analysis to arbitrarily select a plurality of points in the plate thickness direction and take an average value. Unless otherwise specified in the present application, the area measured by the above method is referred to as the area ratio of the crystal face having a certain crystal orientation.

繼而,對立方方位{001}<100>之晶粒的等分散性進行說明。 Next, the isodispersity of the crystal grains of the cubic orientation {001}<100> will be described.

為了調查立方方位晶粒之分散性,藉由利用EBSD法之結晶方位分析以0.1μm之步進掃描300μm×300μm之範 圍,其中將60μm見方設為1區塊,進行共計25區塊之分析。確認每1區塊之立方方位晶粒之面積率、個數、平均晶粒面積、進而包含立方方位粒之母材的平均晶粒面積,並調查分散性。將「如上所述每1區塊之立方方位面積率為5%以上50%以下、立方方位晶粒之個數為40個以上100個以下、及每1個立方方位晶粒之平均晶粒面積為1.8μm2以上45.0μm2以下、進而包含立方方位粒之母材的平均晶粒面積為50μm2以下之情形」作為本發明中之每1視野(300μm×300μm)之立方方位晶粒的等分散性而進行定量。等分散性係藉由如下方式計算:將1區塊之面積(60μm×60μm=3600μm2)乘以該區塊之立方方位面積率而求出每1區塊之立方方位晶粒總面積,進而將該總面積之值除以1區塊內之立方方位晶粒個數而求出1區塊中之每1個立方方位晶粒的平均面積。該求得之值為平均晶粒面積。此處,所謂「等分散性」,係對每1區塊立方方位晶粒之平均晶粒面積及個數進行規定,此處即便假設立方方位晶粒之分佈狀態偏移,亦可於在聚集有25區塊之300×300μm整體中觀察時確認等分散性。例如,若將超小型連接器之窄寬度接腳(0.25mm=250μm)之彎曲加工部設為250×250μm,則於至少4個以上之區塊含有立方方位群,可謂具有等分散性。假設即便如圖1中所示,立方方位聚集於鄰接之4區塊之角,分散性亦相等,壓延平行、垂直方向之異向性亦較小。此處之等分散性(於將相鄰之4區塊設為1群且至少為4群以上之情形時)進而較佳為即 便將1區塊之面積設定地更小亦可進行規定。例如,較佳為將1區塊之面積設為30μm見方,於該1區塊內存在10~25個立方方位{001}<100>之晶粒,立方方位{001}<100>之晶粒面積率為5~50%,立方方位{001}<100>之晶粒之平均晶粒面積為1.8~45.0μm2。於該情形時,母材之晶粒之平均晶粒面積較佳為40μm2以下。 In order to investigate the dispersibility of the cubic orientation crystal grains, a range of 300 μm × 300 μm was scanned in a step of 0.1 μm by a crystal orientation analysis by the EBSD method, and a total of 25 blocks were analyzed by setting the 60 μm square to one block. The area ratio, the number of the cubic azimuth grains per unit block, the average grain area, and the average grain area of the base material including the cubic azimuth particles were confirmed, and the dispersibility was investigated. "As described above, the cubic azimuth area ratio per block is 5% or more and 50% or less, the number of cubic azimuth grains is 40 or more and 100 or less, and the average crystal grain area per one cubic azimuth crystal grain. the average grain area of 1.8 m 2 or less than 2 45.0μm, further comprising a base material of a cubic orientation grains is 50 m 2 or less of the case "in the present invention, each of the visual field (300μm × 300μm), and the like of the cube oriented grains Quantitative for dispersibility. The equal dispersion is calculated by multiplying the area of one block (60 μm × 60 μm = 3600 μm 2 ) by the cubic azimuth area ratio of the block to determine the total area of the cubic azimuth grains per block, and further The average area of each of the cubic azimuth grains in the 1 block is obtained by dividing the total area value by the number of cubic azimuth grains in the 1 block. The value obtained is the average grain area. Here, the "equal dispersion" is defined by the average grain area and the number of cubic azimuth grains per block. Here, even if the distribution state of the cubic azimuth grains is shifted, it is possible to aggregate. The dispersion was confirmed when observed in the whole of 300 × 300 μm of 25 blocks. For example, when the bending portion of the narrow width pin (0.25 mm=250 μm) of the ultra-small connector is 250×250 μm, the cube orientation group is included in at least four or more blocks, which is equivalent to dispersibility. It is assumed that even if the cubic orientation is concentrated at the corners of the adjacent four blocks as shown in FIG. 1, the dispersibility is equal, and the anisotropy of the parallel and vertical directions of rolling is also small. Here, the dispersibility (when the adjacent four blocks are set to one group and at least four or more groups) is further preferably defined even if the area of the one block is set smaller. For example, it is preferable to set the area of the 1 block to 30 μm square, and there are 10 to 25 cubic azimuth {001}<100> grains in the 1 block, and the grain of the cubic orientation {001}<100>. The area ratio is 5 to 50%, and the average grain size of the crystal grains with a cubic orientation of {001}<100> is 1.8 to 45.0 μm 2 . In this case, the average crystal grain size of the crystal grains of the base material is preferably 40 μm 2 or less.

於立方方位晶粒之平均晶粒面積過小之情形時,有固溶熱處理不充分,殘留有未再結晶組織,且強度及彎曲加工性降低之可能性。另一方面,於立方方位晶粒之平均結晶面積過大之情形時,於彎曲加工時,於具有立方方位晶粒以外之方位的晶粒部分產生破裂(龜裂)之可能性較高。又,有時根據彎曲之方向而產生異向性。因此,立方方位晶粒之平均結晶面積較佳為設定為如上所述之範圍。 When the average crystal grain size of the cubic azimuth grains is too small, the solution heat treatment is insufficient, and the unrecrystallized structure remains, and the strength and bending workability are lowered. On the other hand, when the average crystal area of the cubic azimuth crystal grains is excessively large, there is a high possibility that cracks (cracks) occur in the crystal grain portions having orientations other than the cubic azimuth grains during the bending process. Further, anisotropy may occur depending on the direction of the bend. Therefore, the average crystal area of the cubic azimuth grains is preferably set to the range as described above.

又,立方方位晶粒於60μm見方內分佈40個以上100個以下並且具有等分散性,故不於彎曲部之頂點產生龜裂而可獲得良好之彎曲特性,且彎曲異向性及保證應力異向性變小。另一方面,若分佈於60μm見方內之立方方位晶粒之個數過少,則於彎曲部之頂點產生龜裂而無法獲得良好之彎曲特性,且彎曲異向性及保證應力異向性變大。另一方面,於上述晶粒之個數過多之情形時,彎曲加工性、彎曲異向性、保證應力異向性優異,但強度下降。 Further, the cubic azimuth crystal grains are distributed in 40 or less and 100 or less in 60 μm square and have uniform dispersibility, so that cracks are not generated at the apex of the bent portion, and good bending characteristics can be obtained, and the bending anisotropy and the stress difference are ensured. The directionality becomes smaller. On the other hand, if the number of cubic azimuth grains distributed in the 60 μm square is too small, cracks are generated at the apex of the curved portion, and good bending characteristics are not obtained, and the bending anisotropy and the stress anisotropy are ensured to be large. . On the other hand, when the number of the crystal grains is too large, the bending workability, the bending anisotropy, and the stress anisotropy are excellent, but the strength is lowered.

尤其是於由上述銅合金板材構成之超小型連接器用之窄寬度接腳(例如0.25mm寬)之情形時,即便於可有效地改善彎曲加工性之立方方位{001}<100>晶粒之面積率範圍 內提高其面積率,立方方位晶粒之平均晶粒面積亦較大,又,於立方方位晶粒之分佈不均勻之情形時,在彎曲加工時於具有立方方位晶粒以外之方位的晶粒部分產生裂紋(龜裂)之可能性較高。又,有時根據彎曲之方向而產生異向性。因此,較佳為於利用EBSD法之結晶方位分析中,於60μm見方內立方方位晶粒分佈40個以上100個以下,並且具有等分散性。 In particular, in the case of a narrow-width pin (for example, 0.25 mm wide) for an ultra-small connector composed of the above copper alloy sheet material, even a cubic orientation {001}<100> grain which can effectively improve bending workability is used. Area ratio range The area ratio is increased, the average grain area of the cubic azimuth grains is also large, and when the distribution of the cubic azimuth grains is uneven, the grains having azimuth other than the cubic azimuth grains are bent during the bending process. Part of the possibility of cracking (cracking) is high. Further, anisotropy may occur depending on the direction of the bend. Therefore, in the crystal orientation analysis by the EBSD method, it is preferable that the cubic azimuth crystal distribution is 60 or more and 100 or less in a 60 μm square, and has an isotropic property.

因此,於本發明之銅合金板材中控制立方方位晶粒之平均晶粒面積、分散性。具體而言,藉由於再結晶固溶熱處理前之中間溫壓延中加熱至不進行再結晶之溫度,並於該溫度下實施壓延率為5%以上之壓延,從而可於壓延材整體中將應變之導入及釋放控制為適度之狀態。藉此,可實現立方方位之等分散性。又,同時亦可控制各結晶方位之平均晶粒面積。藉由控制該分散性,而提高窄寬度接腳之彎曲加工性,並降低彎曲異向性及保證應力異向性等強度之異向性。 Therefore, the average grain area and dispersibility of the cubic azimuth grains are controlled in the copper alloy sheet of the present invention. Specifically, by heating to a temperature at which no recrystallization is performed in the intermediate temperature rolling before the recrystallization heat treatment, and performing rolling at a temperature of 5% or more at this temperature, strain can be applied to the entire rolled material. The introduction and release control is in a modest state. Thereby, the dispersion of the cubic orientation can be achieved. Moreover, it is also possible to control the average crystal grain area of each crystal orientation. By controlling the dispersibility, the bending workability of the narrow width pin is improved, and the anisotropy of the strength such as the bending anisotropy and the stress anisotropy is reduced.

繼而,對添加於本發明之銅合金板材中之副添加元素進行說明。 Next, the sub-additive element added to the copper alloy sheet material of the present invention will be described.

如上所述,本發明之銅合金板材於較佳之一形態中,除Ni及Si之主添加元素以外,亦可含有選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一種元素作為副添加元素,其含量係副添加元素合計為0.005質量%以上1.0質量%以下,較佳為0.01質量%以上0.9質量%以下,更佳為0.03質量%以上0.8質量%以下,尤 佳為0.05質量%以上0.5質量%以下。若該等副添加元素之總量為1.0質量%以下,則容易產生使導電率降低之危害。又,若為上述範圍內,則可充分有效利用下述添加效果,並且導電率不會明顯降低。若為尤佳之範圍內,則可獲得較高之添加效果及高導電率。另一方面,於副添加元素之含量過少之情形時,無法充分表現添加效果。另一方面,於副添加元素之含量過多之情形時,導電率變低而不佳。以下,說明各副添加元素之添加效果。 As described above, in a preferred embodiment of the copper alloy sheet material of the present invention, in addition to the main additive elements of Ni and Si, it may be selected from the group consisting of Sn, Zn, Ag, Mn, B, P, Mg, Cr, Zr, At least one element selected from the group consisting of Fe and Hf is a sub-addition element, and the content of the sub-addition element is 0.005 mass% or more and 1.0 mass% or less, preferably 0.01 mass% or more and 0.9 mass% or less, more preferably 0.03 mass. % or more and 0.8% by mass or less, especially It is preferably 0.05% by mass or more and 0.5% by mass or less. When the total amount of the sub-addition elements is 1.0% by mass or less, it is likely to cause a risk of lowering the electrical conductivity. Moreover, when it is in the above range, the following addition effect can be utilized fully and effectively, and the electrical conductivity does not fall significantly. If it is in the range of the best, a higher addition effect and a high electrical conductivity can be obtained. On the other hand, when the content of the sub-additive element is too small, the effect of addition cannot be sufficiently exhibited. On the other hand, when the content of the sub-addition element is too large, the conductivity is lowered, which is not preferable. Hereinafter, the effect of adding each of the sub-addition elements will be described.

於上述副添加元素內,Mg、Sn、Zn會提升銅合金板材之耐應力緩和特性。與分別單獨添加之情形相比,於一併添加之情形時因相乘效果而進一步提升耐應力緩和特性。又,有顯著改善焊接脆化之效果。耐應力緩和特性係依據日本電子材料工業會標準規格EMAS-3003,於150℃、1000小時之條件下進行測定。利用懸臂梁法使銅合金板材負荷保證應力之80%之初始應力,將150℃、1000小時之試驗後之位移量設為耐應力緩和特性。 Among the above-mentioned sub-additive elements, Mg, Sn, and Zn enhance the stress relaxation resistance of the copper alloy sheet. Compared with the case of separately adding, in the case of adding together, the stress relaxation property is further improved by the multiplication effect. Moreover, the effect of welding embrittlement is significantly improved. The stress relaxation resistance was measured at 150 ° C for 1,000 hours in accordance with the Japanese Electronic Materials Industry Association standard specification EMAS-3003. The cantilever beam method is used to load the copper alloy sheet with an initial stress of 80% of the stress, and the displacement after the test at 150 ° C and 1000 hours is set as the stress relaxation resistance.

於上述副添加元素內,Mn、Ag、B、P會提升銅合金板材之熱加工性,並且提升強度。 Among the above-mentioned sub-additive elements, Mn, Ag, B, and P enhance the hot workability of the copper alloy sheet and increase the strength.

於上述副添加元素內,Cr、Zr、Fe、Hf以化合物或單體微細地析出於母材中。作為單體,較佳為析出為75nm以上450nm以下,更佳為析出為90nm以上400nm以下,尤佳為析出為100nm以上350nm以下而有助於析出硬化。又,作為化合物,以50nm至500nm之大小析出。於任一情形時,均有藉由抑制晶粒之成長而使晶粒微細之效果,藉由使立 方方位{001}<100>之晶粒之分散狀態變佳,可良好地提升彎曲加工性。 Among the above-mentioned sub-addition elements, Cr, Zr, Fe, and Hf are finely precipitated in the base material by a compound or a monomer. The monomer is preferably precipitated at 75 nm or more and 450 nm or less, more preferably precipitated at 90 nm or more and 400 nm or less, and more preferably precipitated at 100 nm or more and 350 nm or less to contribute to precipitation hardening. Further, as a compound, it is precipitated in a size of 50 nm to 500 nm. In either case, there is an effect of making the crystal grains fine by suppressing the growth of crystal grains. The dispersion state of the crystal grains of the square orientation {001}<100> is improved, and the bending workability can be favorably improved.

繼而,對本發明之銅合金板材之彎曲加工性進行說明。 Next, the bending workability of the copper alloy sheet material of the present invention will be described.

彎曲加工性較佳為利用壓縮試驗機對經90°W彎曲加工之試驗片進行180°密合彎曲加工而不於其彎曲部頂點產生裂紋(龜裂)。 The bending workability is preferably such that the test piece subjected to the 90° W bending process is subjected to a 180° close bending process by a compression tester without causing cracks (cracks) at the apex of the bent portion.

換而言之,關於本發明之銅合金板材之壓延平行方向及壓延垂直方向之彎曲加工性,較佳為不因1mm寬度以下之窄寬度彎曲加工中之180°U密合彎曲而於彎曲加工表面產生龜裂。 In other words, the bending workability of the rolling parallel direction and the rolling vertical direction of the copper alloy sheet of the present invention is preferably not subjected to bending processing by 180° U close bending in a narrow width bending process of 1 mm width or less. Cracks appear on the surface.

繼而,對彎曲係數之異向性及保證應力之異向性進行說明。 Next, the anisotropy of the bending coefficient and the anisotropy of the guaranteed stress are explained.

壓延平行方向(//)之彎曲係數與壓延垂直方向(⊥)之彎曲係數之差的絕對值較佳為10GPa以下,於該情形時,彎曲係數之異向性較小。又,壓延平行方向之保證應力與壓延垂直方向之保證應力之差的絕對值較佳為10MPa以下,於該情形時,保證應力之異向性較小。 The absolute value of the difference between the bending coefficient in the rolling parallel direction (//) and the bending coefficient in the rolling vertical direction (⊥) is preferably 10 GPa or less, and in this case, the anisotropy of the bending coefficient is small. Further, the absolute value of the difference between the guaranteed stress in the rolling parallel direction and the guaranteed stress in the vertical direction of the rolling is preferably 10 MPa or less. In this case, the anisotropy of the stress is ensured to be small.

繼而,對本發明之銅合金板材之製造方法之較佳的實施形態進行說明。 Next, a preferred embodiment of the method for producing a copper alloy sheet material of the present invention will be described.

於製造本發明之銅合金板材時係使用如下之製造方法:對鑄造銅合金原材料而得之鑄塊實施熱處理(均質化處理)及熱壓延,進而於藉由冷壓延而成形為薄板後,進行未達上述薄板之再結晶溫度的中間退火,並且於加熱至100℃以上400℃以下後於該溫度下進行壓延率為5%以上 之溫壓延(以下稱為中間溫壓延),其後進行使薄板中之溶質原子再固溶之中間固溶熱處理。 In the production of the copper alloy sheet material of the present invention, the following production method is employed: the ingot obtained by casting the copper alloy material is subjected to heat treatment (homogenization treatment) and hot rolling, and further formed into a thin plate by cold rolling. Performing an intermediate annealing that does not reach the recrystallization temperature of the above-mentioned thin plate, and after heating to 100 ° C or more and 400 ° C or less, the rolling rate is 5% or more at this temperature. The temperature is rolled (hereinafter referred to as intermediate temperature rolling), and then an intermediate solution heat treatment for resolubilizing the solute atoms in the thin plate is performed.

上述銅合金原材料係具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上1.0質量%以下之Si、及視需要合計為0.005質量%以上1.0質量%以下之選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少1種,且剩餘部分由銅及不可避免之雜質構成。 The copper alloy material has a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 1.0% by mass or less of Si, and, if necessary, a total of 0.005% by mass or more and 1.0% by mass or less, selected from the group consisting of Sn. At least one of a group consisting of Zn, Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf, and the remainder is composed of copper and unavoidable impurities.

此處所謂壓延率,係指用自壓延前之剖面面積減去壓延後之剖面面積而得之值除以壓延前之剖面面積並乘以100且以百分比表示之值。即,由下述式所示。 The calendering ratio herein refers to a value obtained by subtracting the cross-sectional area after calendering from the cross-sectional area before calendering, divided by the cross-sectional area before calendering, multiplied by 100, and expressed as a percentage. That is, it is represented by the following formula.

[壓延率]={([壓延前之剖面面積]-[壓延後之剖面面積])/[壓延前之剖面面積]}×100(%) [calendering rate]={([sectional area before rolling]-[cross-sectional area after rolling])/[sectional area before rolling]}×100 (%)

具體而言,作為較佳之一例可列舉如下之製造方法。 Specifically, as a preferred example, the following production methods can be mentioned.

對上述銅合金原材料進行鑄造[步驟1]而獲得鑄塊。於對該鑄塊進行均質化熱處理[步驟2]、熱壓延[步驟3]後,立即進行冷卻(例如,水浴冷卻、水淬火)[步驟4]。繼而,為了去除表面之氧化被膜而進行端面切削[步驟5]。其後,進行冷壓延[步驟6],以80%以上之壓延率進行壓延而獲得薄板。 The above copper alloy raw material is cast [Step 1] to obtain an ingot. After the ingot is subjected to homogenization heat treatment [Step 2] and hot rolling [Step 3], cooling is performed immediately (for example, water bath cooling and water quenching) [Step 4]. Then, the end surface cutting is performed in order to remove the oxide film on the surface [Step 5]. Thereafter, cold rolling is performed [Step 6], and rolling is performed at a rolling ratio of 80% or more to obtain a thin plate.

並且,於薄板之一部分再結晶之程度的溫度即400℃以上700℃以下之溫度進行5秒至20小時之中間退火[步驟7],其後,於加熱至100℃以上400℃以下後於該溫度下,對薄板實施壓延率為5%以上50%以下之中間溫壓延作為中 間溫壓延[步驟8]。 Further, an intermediate annealing is performed for 5 seconds to 20 hours at a temperature at which a portion of the thin plate is recrystallized, that is, a temperature of 400 ° C or higher and 700 ° C or lower [Step 7], and thereafter, after heating to 100 ° C or higher and 400 ° C or lower, At the temperature, the intermediate plate is rolled to a medium temperature of 5% or more and 50% or less. Inter-temperature rolling [Step 8].

其後,進行使溶質原子再固溶之中間固溶熱處理[步驟9]。於該中間固溶熱處理中之薄板之再結晶集合組織中,立方方位面積率增加。 Thereafter, an intermediate solution heat treatment for resolubilizing the solute atoms is carried out [Step 9]. In the recrystallized aggregate structure of the thin plate in the intermediate solution heat treatment, the cubic azimuth area ratio is increased.

於該中間固溶熱處理[步驟9]後,依序實施時效析出熱處理[步驟10]、最終冷壓延[步驟11]及調質退火[步驟12]。 After the intermediate solution heat treatment [Step 9], the aging precipitation heat treatment [Step 10], the final cold rolling [Step 11], and the tempering annealing [Step 12] are sequentially performed.

另一方面,先前之析出型銅合金之製造方法係如下方法:對銅合金原材料進行鑄造[步驟1]而獲得鑄塊,並對其進行均質化熱處理[步驟2],進而依序進行熱壓延[步驟3]、冷卻(水浴冷卻)[步驟4]、端面切削[步驟5]、冷壓延[步驟6]而薄板化。並且於700℃以上1000℃以下之溫度範圍進行中間固溶熱處理[步驟9]而使溶質原子再固溶後,藉由時效析出熱處理[步驟10]、最終冷壓延[步驟11]及視需要之調質退火[步驟12]而滿足必需之強度。於上述一系列之步驟中,材料之集合組織係由於中間固溶化熱處理中產生之再結晶來大致決定,並由最終壓延中產生之方位的旋轉來做最後決定。 On the other hand, the prior method for producing a precipitated copper alloy is a method of casting a copper alloy raw material [Step 1] to obtain an ingot, and performing homogenization heat treatment [Step 2], followed by hot pressing in sequence. [Thin 3], cooling (water bath cooling) [Step 4], end face cutting [Step 5], and cold rolling [Step 6] are thinned. And performing an intermediate solution heat treatment in a temperature range of 700 ° C or more and 1000 ° C or less [Step 9] to resolubilize the solute atoms, followed by aging precipitation heat treatment [Step 10], final cold rolling [Step 11], and optionally Quenching and tempering [Step 12] meets the necessary strength. In the series of steps described above, the aggregate structure of the material is roughly determined by the recrystallization generated in the intermediate solution heat treatment, and the final decision is made by the rotation of the orientation generated in the final calendering.

與本發明之製造方法相比較,先前未進行上述中間退火[步驟7]及中間溫壓延[步驟8]兩個步驟。 Compared with the manufacturing method of the present invention, the above two steps of the intermediate annealing [Step 7] and the intermediate temperature rolling [Step 8] have not been previously performed.

繼而,對更詳細地設定本發明之製造方法中之各步驟之條件的實施態樣進行說明。 Next, an embodiment in which the conditions of each step in the manufacturing method of the present invention are set in more detail will be described.

於鑄造[步驟1]中,將至少含有1.0質量%以上5.0質量%以下之Ni,含有0.1質量%以上1.0質量%以下之Si,關於其他副添加元素以視需要適當含有之方式摻合元素,且 剩餘部分由Cu及不可避免之雜質構成的合金原材料利用高頻熔解爐熔解,並將其以0.1℃/s以上100℃/s以下之冷卻速度冷卻而獲得鑄塊。並且,於800℃以上1020℃以下對該鑄塊實施3分鐘至10小時之均質化熱處理[步驟2]。其後,進行熱壓延[步驟3],進而進行水淬火(相當於冷卻[步驟4])。並且於端面切削[步驟5]去除氧化被膜。其後,實施壓延率為80%~99.8%之冷壓延[步驟6]而獲得薄板。 In the casting [Step 1], at least 1.0% by mass or more and 5.0% by mass or less of Ni is contained, and 0.1% by mass or more and 1.0% by mass or less of Si is contained, and the other sub-additive elements are blended as appropriate, as needed. And The alloy raw material composed of Cu and unavoidable impurities is melted in a high-frequency melting furnace, and is cooled at a cooling rate of 0.1 ° C / s or more and 100 ° C / s or less to obtain an ingot. Further, the ingot is subjected to a homogenization heat treatment for 3 minutes to 10 hours at 800 ° C or more and 1020 ° C or less [Step 2]. Thereafter, hot rolling is performed [Step 3], and further water quenching (corresponding to cooling [Step 4]). And the end face is cut [Step 5] to remove the oxide film. Thereafter, a cold rolling having a rolling ratio of 80% to 99.8% is carried out [Step 6] to obtain a thin plate.

繼而,於400℃以上700℃以下進行5秒至20小時之中間退火[步驟7],進而,於在100℃以上400℃以下之條件下進行加熱後,於該溫度下進行壓延率為5%以上50%以下之中間溫壓延[步驟8]。此處,所謂溫壓延,係指於上述100℃以上400℃以下之溫度進行壓延。 Then, the intermediate annealing is performed at 400 ° C or higher and 700 ° C or lower for 5 seconds to 20 hours [Step 7], and further, after heating at 100 ° C or higher and 400 ° C or lower, the rolling ratio is 5% at this temperature. Intermediate temperature rolling of 50% or less above [Step 8]. Here, the term "warm rolling" means rolling at a temperature of from 100 ° C to 400 ° C.

其後,於600℃以上1000℃以下進行5秒至1小時之中間固溶熱處理[步驟9]。其後,較佳為依序進行如下步驟而獲得本發明之銅合金板材:於氮或氬等惰性氣體環境中之400℃以上700℃以下且5分鐘至10小時之時效析出熱處理[步驟10]、壓延率為3%以上25%以下之最終之冷壓延[步驟11]、於200℃以上600℃以下且5秒以上10小時以下之調質退火[步驟12]。 Thereafter, an intermediate solution heat treatment is performed for 5 seconds to 1 hour at 600 ° C or more and 1000 ° C or less [Step 9]. Thereafter, the copper alloy sheet material of the present invention is preferably obtained by sequentially performing the following steps: aging precipitation heat treatment at 400 ° C or more and 700 ° C or less and 5 minutes to 10 hours in an inert gas atmosphere such as nitrogen or argon [Step 10] The final cold rolling is performed at a rolling ratio of 3% or more and 25% or less [Step 11], and tempering annealing at 200 ° C or higher and 600 ° C or lower for 5 seconds or longer and 10 hours or shorter [Step 12].

於本發明之製造方法中,於對所獲得之板材之性狀無特別需要之情形時,亦可省略並不進行上述端面切削[步驟5]、最終冷壓延[步驟11]、調質退火[步驟12]各步驟中之1個以上。 In the manufacturing method of the present invention, when there is no particular need for the properties of the obtained sheet material, the end surface cutting [Step 5], the final cold rolling [Step 11], and the tempering annealing step may be omitted. 12] One or more of each step.

於本實施態樣中,於熱壓延[步驟3]中在700℃以上再 熱溫度(1020℃)以下之溫度區中,進行下述加工:用以破壞鑄造組織或偏析並形成均勻組織之加工、及用於由動態再結晶所生成之晶粒的微細化之加工。 In this embodiment, in the hot rolling [Step 3], the temperature is above 700 ° C. In the temperature zone below the thermal temperature (1020 ° C), the following processing is performed: a process for destroying a cast structure or segregation to form a uniform structure, and a process for refining crystal grains generated by dynamic recrystallization.

於中間退火[步驟7]中以不使合金中之組織整個面再結晶之程度進行熱處理。其後,加熱至不會進行再結晶之溫度帶即較佳為100℃以上400℃以下,更佳為120℃以上380℃以下,尤佳為140℃以上360℃以下,於該溫度下,較佳為以5%以上50%以下,更佳為以7%以上45%以下,尤佳為以10%以上40%以下之壓延率實施中間溫壓延[步驟8],並控制加工應變之導入及釋放。 In the intermediate annealing [Step 7], heat treatment is performed to such an extent that the entire surface of the structure in the alloy is not recrystallized. Thereafter, the temperature band which is heated to prevent recrystallization is preferably 100 ° C or more and 400 ° C or less, more preferably 120 ° C or more and 380 ° C or less, and particularly preferably 140 ° C or more and 360 ° C or less, at which temperature, Preferably, the pressure is 5% or more and 50% or less, more preferably 7% or more and 45% or less, and particularly preferably, the intermediate temperature rolling is performed at a rolling ratio of 10% or more and 40% or less [Step 8], and the introduction of the processing strain is controlled. freed.

若該中間溫間壓延[步驟8]中之壓延率過低,則加工應變較小,而於後續步驟之中間固溶熱處理[步驟9]中晶粒粗大化,彎曲皺褶變大,特性較差。另一方面,若中間溫壓延[步驟8]中之壓延率過高,則於再結晶固溶熱處理[步驟9]中成長之立方方位旋轉至其他方位,而使立方方位面積率降低。又,於中間溫壓延[步驟8]中之加熱溫度低於100℃之情形時,加工應變之釋放變少,相反地,於高於400℃之情形時會進行加工應變之釋放,並且進行再結晶,於後續步驟之中間固溶熱處理[步驟9]中,應變誘發晶界遷移中之立方方位晶粒之等分散性變得不充分。其結果,於中間溫壓延[步驟8]中之加熱溫度過高或者過低之任一之情形時,均產生作為彎曲之異向性之彎曲異向性或作為強度之異向性之保證應力異向性。 If the rolling ratio in the intermediate temperature-calendering [Step 8] is too low, the processing strain is small, and in the intermediate solution heat treatment in the subsequent step [Step 9], the crystal grains are coarsened, the bending wrinkles become large, and the characteristics are poor. . On the other hand, if the rolling ratio in the intermediate temperature rolling [Step 8] is too high, the cubic azimuth which is grown in the recrystallization solution heat treatment [Step 9] is rotated to another orientation, and the cubic azimuth area ratio is lowered. Further, in the case where the heating temperature in the intermediate temperature rolling [Step 8] is lower than 100 ° C, the release of the processing strain becomes less, and conversely, when the heating temperature is higher than 400 ° C, the processing strain is released, and further Crystallization, in the intermediate solution heat treatment in the subsequent step [Step 9], the dispersibility of the cubic orientation crystal grains in the strain-induced grain boundary migration becomes insufficient. As a result, when the heating temperature in the intermediate temperature rolling [Step 8] is too high or too low, the bending anisotropy or the proofing stress as the anisotropy of the strength is generated. Anisotropy.

於中間固溶熱處理[步驟9]中,於再結晶集合組織中, 立方方位面積率增加。此處,若使中間固溶熱處理[步驟9]前之中間退火[步驟7]的熱處理溫度高於上述範圍之溫度,則形成氧化被膜而不佳。因此,較佳為將該中間退火[步驟7]中之熱處理溫度設為400℃以上700℃以下。尤其是雖然難以毫無歧異地斷定,但藉由於中間退火[步驟7]中將熱處理溫度設為上述溫度範圍,而有於中間固溶熱處理[步驟9]中立方方位面積率增加之傾向。 In the intermediate solution heat treatment [Step 9], in the recrystallized aggregate structure, The cubic azimuth area ratio increases. Here, if the heat treatment temperature of the intermediate annealing [Step 7] before the intermediate solution heat treatment [Step 9] is higher than the above range, it is not preferable to form an oxide film. Therefore, it is preferable to set the heat treatment temperature in the intermediate annealing [Step 7] to 400 ° C or more and 700 ° C or less. In particular, although it is difficult to determine without distinction, the cubic azimuthal area ratio tends to increase in the intermediate solution heat treatment [Step 9] because the heat treatment temperature is set to the above temperature range in the intermediate annealing [Step 7].

於中間固溶熱處理[步驟9]後,實施時效析出熱處理[步驟10]、最終冷壓延[步驟11]、調質退火[步驟12]。為了於中間固溶熱處理[步驟9]中形成之再結晶集合組織中使由應變誘發晶界遷移而產生之立方方位面積率增加,有效的是於中間溫壓延[步驟8]中進行特定之加工。並且,藉由於中間溫壓延[步驟8]中將結晶方位控制於特定方向而有助於立方方位晶粒之發展。進而,藉由利用進行時效析出熱處理[步驟10]使添加元素自固溶體析出,而可藉由析出強化提升機械強度。又,亦可藉由進行最終冷壓延[步驟11]而對板厚進行最終調整。進而,亦可藉由進行調質退火[步驟12]而對板材之調質進行最終調整。 After the intermediate solution heat treatment [Step 9], the aging precipitation heat treatment [Step 10], the final cold rolling [Step 11], and the tempering annealing [Step 12] are carried out. In order to increase the cubic azimuth area ratio generated by strain-induced grain boundary migration in the recrystallized aggregate structure formed in the intermediate solution heat treatment [Step 9], it is effective to perform specific processing in the intermediate temperature rolling [Step 8]. . Moreover, the development of the cubic azimuth grains is facilitated by controlling the crystal orientation in a specific direction in the intermediate temperature rolling [Step 8]. Further, by performing the aging precipitation heat treatment [Step 10], the additive element is precipitated from the solid solution, whereby the mechanical strength can be improved by precipitation strengthening. Further, the plate thickness can be finally adjusted by performing the final cold rolling [Step 11]. Further, the quenching and tempering of the sheet material can be finally adjusted by performing the tempering annealing [Step 12].

又,利用冷壓延[步驟6]導入更進一步之加工應變,於中間退火[步驟7]中於400℃以上700℃以下加入5秒至20小時之熱處理,進而進行中間溫壓延[步驟8],藉此於中間固溶處理[步驟9]中之再結晶集合組織中,立方方位面積率明顯增加。 Further, further processing strain is introduced by cold rolling [Step 6], and heat treatment is performed in the intermediate annealing [Step 7] at 400 ° C or more and 700 ° C or less for 5 seconds to 20 hours, and further intermediate temperature rolling is performed [Step 8]. Thereby, the cubic azimuth area ratio is remarkably increased in the recrystallized aggregate structure in the intermediate solution treatment [Step 9].

上述中間退火[步驟7]之目的在於獲得未完全地再結晶 而是部分地再結晶之亞退火組織。上述中間溫壓延[步驟8]之目的在於:藉由加熱溫度為100℃以上400℃以下、壓延率為5%以上之壓延,而進行微觀上不均勻之應變的導入及釋放。 The purpose of the above intermediate annealing [Step 7] is to obtain incomplete recrystallization Instead, the subannealed tissue is partially recrystallized. The intermediate temperature rolling [Step 8] aims to introduce and release microscopically uneven strain by rolling at a heating temperature of 100 ° C or more and 400 ° C or less and a rolling ratio of 5% or more.

藉由中間退火[步驟7]及中間溫壓延[步驟8]之作用效果,而可實現中間固溶處理[步驟9]中之立方方位晶粒之成長及立方方位晶粒之微細化與等分散。於中間溫壓延[步驟8]中,進行利用壓延之應變之導入、及利用加熱之應變之釋放,藉由適當地控制該等兩者,可提高中間固溶熱處理[步驟9]之應變誘發晶界遷移中之立方方位晶粒的發展、立方方位晶粒的微細化及等分散性。即,可藉由導入應變而使立方方位晶粒發展,並可藉由釋放應變而提高立方方位晶粒之微細化及等分散性。於先前通常之方法中,如中間固溶處理[步驟9]之類之熱處理係以為了減少後續步驟中之負荷而使材料再結晶從而降低強度為主要目的,但於本發明中與該目的完全不同。 By the effect of the intermediate annealing [Step 7] and the intermediate temperature rolling [Step 8], the growth of the cubic azimuth grains in the intermediate solution treatment [Step 9] and the miniaturization and equal dispersion of the cubic azimuth grains can be realized. . In the intermediate temperature rolling [Step 8], the introduction of strain by rolling and the release of strain by heating are performed, and by appropriately controlling the two, the strain-induced crystal of the intermediate solution heat treatment [Step 9] can be improved. The development of cubic azimuth grains in the boundary migration, the miniaturization of cubic azimuth grains, and the like. That is, the cubic azimuth grains can be developed by introducing strain, and the grain size and the isodispersity of the cubic azimuth grains can be improved by releasing the strain. In the conventional method, the heat treatment such as the intermediate solution treatment [Step 9] is mainly for the purpose of reducing the load in the subsequent step to recrystallize the material to reduce the strength, but in the present invention and the purpose is completely different.

本發明之銅合金板材之板厚並無特別限制,通常為0.03~0.50mm,較佳為0.05~0.35mm。 The thickness of the copper alloy sheet of the present invention is not particularly limited and is usually 0.03 to 0.50 mm, preferably 0.05 to 0.35 mm.

本發明之銅合金板材較佳為藉由滿足上述之各要件,而滿足並具有例如連接器用銅合金板材所要求之下述特性。 The copper alloy sheet material of the present invention preferably satisfies and has, for example, the following characteristics required for a copper alloy sheet for a connector by satisfying the above-described respective requirements.

特性之一之彎曲加工性較佳為於180°密合U彎曲試驗中於彎曲加工表面部無龜裂。其詳細之條件係設為如實施例中所記載般。 The bending workability of one of the characteristics is preferably such that no crack is formed in the curved surface portion in the 180° close U bending test. The detailed conditions are as described in the examples.

特性之一之彎曲係數較佳為130GPa以下。其詳細之條件係設為如實施例中所記載般。本發明之銅合金板材所顯示之彎曲係數之下限值並無特別限制,通常為90GPa以上。 The bending coefficient of one of the characteristics is preferably 130 GPa or less. The detailed conditions are as described in the examples. The lower limit of the bending coefficient exhibited by the copper alloy sheet of the present invention is not particularly limited and is usually 90 GPa or more.

特性之一之保證應力較佳為700MPa以上。進而較佳為750MPa以上。其詳細之測定條件係設為如實施例中所記載般。本發明之銅合金板材所顯示之保證應力之上限值並無特別限制,通常為900MPa以下。 The guaranteed stress of one of the characteristics is preferably 700 MPa or more. Further, it is preferably 750 MPa or more. The detailed measurement conditions are as described in the examples. The upper limit of the guaranteed stress exhibited by the copper alloy sheet of the present invention is not particularly limited, and is usually 900 MPa or less.

特性之一之導電率較佳為5%IACS(International Annealed Copper Standard)以上。進而較佳為10%IACS以上,尤佳為20%IACS以上。其詳細之測定條件係設為如實施例中所記載般。本發明之銅合金板材所顯示之導電率之上限值並無特別限制,通常為50%IACS以下。 The conductivity of one of the characteristics is preferably 5% IACS (International Annealed Copper Standard) or more. Further preferably, it is 10% IACS or more, and particularly preferably 20% IACS or more. The detailed measurement conditions are as described in the examples. The upper limit of the conductivity of the copper alloy sheet of the present invention is not particularly limited and is usually 50% IACS or less.

[實施例] [Examples]

以下,基於實施例進而詳細地說明本發明,但本發明並不限定於該等。 Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited thereto.

(實施例1~14及比較例1~4) (Examples 1 to 14 and Comparative Examples 1 to 4)

將含有表1中所示之各量之Ni、Si、副添加元素、且剩餘部分由Cu及不可避免之雜質構成的合金於高頻熔解爐中進行熔解,並將其以0.1℃/秒至100℃/秒之冷卻速度冷卻而進行鑄造[步驟1],獲得鑄塊。 The alloy containing the respective amounts of Ni, Si, and sub-addition elements shown in Table 1, and the remainder consisting of Cu and unavoidable impurities was melted in a high-frequency melting furnace, and was applied at 0.1 ° C / sec. The casting was carried out by cooling at a cooling rate of 100 ° C / sec [Step 1], and an ingot was obtained.

於800℃以上1020℃以下對該鑄塊進行3分鐘至10小時之均質化熱處理[步驟2]後,於700℃以上且再熱溫度(1020℃)以下進行作為熱加工之熱壓延[步驟3],進而進行水淬火(相當於冷卻[步驟4])而獲得熱壓延板。繼而, 進行該熱壓延板表面之端面切削[步驟5]而去除氧化被膜。其後,進行壓延率為80%至99.8%之冷壓延[步驟6]而獲得薄板。 The ingot is subjected to a homogenization heat treatment for 3 minutes to 10 hours at 800 ° C or higher and 1020 ° C or lower [Step 2], and then subjected to hot rolling as a hot working at 700 ° C or higher and at a reheating temperature (1020 ° C) or less. 3] Further, water quenching (corresponding to cooling [Step 4]) is performed to obtain a hot rolled sheet. Then, The end face of the hot rolled sheet is cut [Step 5] to remove the oxide film. Thereafter, cold rolling is performed at a calendering rate of 80% to 99.8% [Step 6] to obtain a sheet.

繼而,於400℃以上700℃以下藉由5秒至20小時之熱處理進行薄板之中間退火[步驟7],進而,於加熱至100℃以上400℃以下後,於該溫度下進行以5%以上且50%以下之壓延率進行壓延之中間溫壓延[步驟8]。 Then, the intermediate annealing of the thin plate is carried out by heat treatment at 400 ° C to 700 ° C for 5 seconds to 20 hours [Step 7], and further, after heating to 100 ° C or higher and 400 ° C or lower, at a temperature of 5% or more. And the rolling rate of 50% or less is subjected to calendering intermediate temperature rolling [Step 8].

其後,於600℃以上1000℃以下實施5秒至1小時之中間固溶處理[步驟9]。繼而,於惰性氣體環境中於400℃以上700℃以下進行5分鐘至1小時之時效析出熱處理[步驟10],以3%至25%之壓延率進行最終之冷壓延[步驟11],並於200℃以上600℃以下進行5秒以上10小時以下之調質退火[步驟12],製造了銅合金板材之供試材(實施例1至14及比較例1至4)。將各供試材之最終板厚設為0.08mm。 Thereafter, the intermediate solution treatment is carried out at 600 ° C. or higher and 1000 ° C or lower for 5 seconds to 1 hour [Step 9]. Then, the aging precipitation heat treatment is performed in an inert gas atmosphere at 400 ° C or more and 700 ° C or less for 5 minutes to 1 hour [Step 10], and the final cold rolling is performed at a rolling ratio of 3% to 25% [Step 11], and The quenching and tempering of 5 seconds or more and 10 hours or less was carried out at 200 ° C or more and 600 ° C or less [Step 12], and the test materials of the copper alloy sheets (Examples 1 to 14 and Comparative Examples 1 to 4) were produced. The final thickness of each test piece was set to 0.08 mm.

關於該等實施例1至14及比較例1至4之各組成及特性,係如表1及表2所示。 The compositions and characteristics of the above Examples 1 to 14 and Comparative Examples 1 to 4 are shown in Tables 1 and 2.

再者,於各熱處理或壓延之後,視材料表面之氧化或粗糙度之狀態進行酸洗或表面研磨,視形狀進行利用張力調平機(tension leveler)之矯正。又,熱加工[步驟3]中之加工溫度係藉由設置於壓延機之入料側及出料側之放射溫度計進行測定。 Further, after each heat treatment or rolling, pickling or surface grinding is performed depending on the state of oxidation or roughness of the surface of the material, and the shape is subjected to correction by a tension leveler. Further, the processing temperature in the hot working [Step 3] is measured by a radiation thermometer provided on the feeding side and the discharging side of the calender.

對各供試材進行下述之特性調查。 The following characteristics were investigated for each test material.

(a)立方方位面積率 (a) cubic azimuth area ratio

利用EBSD法於掃描步進為0.1μm之條件下對0.09mm2(300μm×300μm)之測定面積進行測定。又,於該測定面積中,將60μm×60μm設為1區塊,於1視野中進行共計25區塊(5區塊×5區塊)之測定。該情形時之掃描步進係為了測定微細之晶粒而如上所述設為0.1μm之步進。於分析中,將300μm×300μm之測定面積中之EBSD測定結果分割為上述25區塊,確認各區塊之立方方位面積率、平均晶粒面積、晶粒之個數、含有立方方位粒之母材的平均晶粒面積。電子束係將來自掃描式電子顯微鏡之鎢絲(tungsten filament)之熱電子作為產生源。 The measurement area of 0.09 mm 2 (300 μm × 300 μm) was measured by the EBSD method under the condition that the scanning step was 0.1 μm. Further, in the measurement area, 60 μm × 60 μm was used as one block, and a total of 25 blocks (5 blocks × 5 blocks) were measured in one field of view. In this case, the scanning step is set to a step of 0.1 μm as described above in order to measure fine crystal grains. In the analysis, the EBSD measurement result in the measurement area of 300 μm × 300 μm was divided into the above 25 blocks, and the cubic azimuth area ratio, the average crystal grain area, the number of crystal grains, and the mother containing the cubic azimuth were confirmed. The average grain area of the material. The electron beam system uses hot electrons from a tungsten filament of a scanning electron microscope as a generation source.

(b)180°密合U彎曲試驗 (b) 180° close U bending test

以垂直於壓延方向寬度成為0.25mm、長度成為1.5mm之方式藉由利用加壓之衝壓進行加工。將對其彎曲之軸以與壓延方向成為直角之方式進行了W彎曲者設為GW(Good Way),將以與壓延方向平行之方式進行了W彎曲者設為BW(Bad Way),於依據日本伸銅協會技術標準JCBA-T307(2007)進行90°W彎曲加工後,利用壓縮試驗機不附內側半徑而進行了180°密合彎曲加工。利用100倍之掃描式電子顯微鏡觀察彎曲加工表面,調查有無龜裂。將無龜裂者表示為「○(良)」,將有龜裂者表示為「×(差)」。關於此處之龜裂之尺寸,最大寬度為30μm~100μm,最大深度為10μm以上。 The processing was performed by press-pressing so that the width was 0.25 mm perpendicular to the rolling direction and the length was 1.5 mm. The bending axis is set to GW (Good Way) so that the bending is performed at a right angle to the rolling direction, and the B bending (Bad Way) is performed so as to be parallel to the rolling direction. After the 90 °W bending process was performed by the JCBA-T307 (2007), the technical standard of the Japan Copper Association, a 180° close bending process was performed without using the inner radius of the compression tester. The curved surface was observed using a scanning electron microscope at 100 times to investigate the presence or absence of cracks. The person without cracks is indicated as "○ (good)", and the person with cracks is indicated as "× (poor)". Regarding the size of the crack here, the maximum width is 30 μm to 100 μm, and the maximum depth is 10 μm or more.

(c)彎曲係數 (c) bending factor

試驗片係以垂直於壓延方向寬度為0.25mm、平行於壓 延方向長度為1.5mm之方式藉由利用加壓之衝壓進行加工。以懸臂梁對試驗片之表背面分別測定10次,並顯示其平均值。 The test piece has a width of 0.25 mm perpendicular to the rolling direction and is parallel to the pressure. The length of the extension is 1.5 mm by means of press stamping. The front and back sides of the test piece were measured 10 times with a cantilever beam, and the average value thereof was shown.

彎曲係數E(GPa)係下述式(1)所示。 The bending coefficient E (GPa) is represented by the following formula (1).

E=4a/b×(L/t)3 (1) E=4a/b×(L/t) 3 (1)

此處,a為位移f與應力w之斜率,b為供試材之寬度,L為固定端與負荷點之距離,t為供試材之板厚。 Here, a is the slope of the displacement f and the stress w, b is the width of the test material, L is the distance between the fixed end and the load point, and t is the thickness of the test piece.

於該試驗中,確認變形於壓延平行方向與壓延垂直方向之異向性。 In this test, it was confirmed that the deformation was in the direction parallel to the rolling parallel direction and the rolling perpendicular direction.

(d)保證應力[Y] (d) Guaranteed stress [Y]

於彎曲係數之測定中,根據直至各試驗片之彈性界限為止之壓入量(位移)根據下述式(2)算出保證應力Y(MPa)。 In the measurement of the bending coefficient, the guaranteed stress Y (MPa) is calculated from the indentation amount (displacement) up to the elastic limit of each test piece according to the following formula (2).

Y={(3E/2)×t×(f/L)×1000}/L (2) Y={(3E/2)×t×(f/L)×1000}/L (2)

E為彎曲係數,t為板厚,L為固定端與負荷點之距離,f為位移(壓入深度)。 E is the bending coefficient, t is the plate thickness, L is the distance between the fixed end and the load point, and f is the displacement (pressing depth).

於該試驗中,確認保證應力於壓延平行方向與壓延垂直方向之異向性。 In this test, it was confirmed that the stress was anisotropy in the direction parallel to the rolling and the direction perpendicular to the rolling.

(e)導電率[EC] (e) Conductivity [EC]

於保持為20℃(±0.5℃)之恆溫槽中利用四端子法測量比電阻而算出導電率。再者,將端子間距離設為100mm。 The specific resistance was measured by a four-terminal method in a thermostatic chamber maintained at 20 ° C (± 0.5 ° C) to calculate the electrical conductivity. Furthermore, the distance between the terminals was set to 100 mm.

關於本發明之實施例1至實施例14、比較例1至比較例4,以成為表1中所示之組成之方式摻合主原料Cu、Ni、Si、及副添加元素,並進行熔解、鑄造。 With respect to Examples 1 to 14 and Comparative Examples 1 to 4 of the present invention, the main raw materials Cu, Ni, Si, and the sub-additive elements were blended and melted in such a manner as to have the composition shown in Table 1. Casting.

如表2所示,於實施例1至實施例14之製造條件下,中間溫壓延[步驟8]係於加熱至100℃以上400℃以下後,將壓延率設為5%以上。關於組織,實施例1至實施例14之立方方位面積率為5%以上50%以下,立方方位晶粒之平均晶粒面積為1.8μm2以上45.0μm2以下,每1區塊(60μm×60μm)之立方方位晶粒個數為40個以上100個以下,含有立方方位粒之母材之平均晶粒面積為50μm2以下。於實施例1至實施例14之特性中,180°U密合彎曲、彎曲異向性、保證應力異向性均顯示出優異之結果。 As shown in Table 2, under the production conditions of Examples 1 to 14, the intermediate temperature rolling [Step 8] was performed after heating to 100 ° C or more and 400 ° C or less, and the rolling ratio was set to 5% or more. On the organization, Examples 1 to 14 Example embodiments of a cubic orientation of an area of 5% or 50% or less, the average grain area of crystal grains of the cube orientation is 1.8 m 2 or less than 2 45.0μm, per 1 block (60μm × 60μm The number of cubic azimuth grains is 40 or more and 100 or less, and the average crystal grain size of the base material containing cubic azimuth particles is 50 μm 2 or less. Among the characteristics of Examples 1 to 14, the 180° U close bending, the bending anisotropy, and the proof stress anisotropy all showed excellent results.

於比較例1至比較例4中,由於未滿足本發明之製造方法中之規定,故而表示不滿足立方方位面積率、每1區塊之立方方位粒個數之情形。 In Comparative Example 1 to Comparative Example 4, since the specification in the production method of the present invention was not satisfied, the case where the cubic azimuth area ratio and the number of cubic azimuth particles per block were not satisfied was shown.

如表1、2所示,於滿足本發明之範圍即如下情形時彎曲之特性、彎曲係數之特性、保證應力之特性均良好:具有含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si、及視需要合計為0.005質量%以上1.0質量%以下之選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一種,且剩餘部分由銅及不可避免之雜質構成的組成,於利用電子背向散射繞射法之結晶方位分析中,立方方位{001}<100>之面積率為5%以上50%以下,除該等以外較佳為具有立方方位之晶粒的平均晶粒面積為1.8μm2以上45.0μm2以下,進而母材之晶粒的平均晶粒面積為50μm2以下。於彎曲之特性中,未於彎曲之頂部產生裂紋。又,於彎曲係數之特性中,彎曲係數異向性為10GPa以內,於保證應力之特性中,保證應力異向性為10MPa以內,且異向性較小。 As shown in Tables 1 and 2, the characteristics of the bending, the characteristics of the bending coefficient, and the characteristics of the guaranteed stress are all good when the range of the present invention is satisfied as follows: Ni is contained in an amount of 1.0% by mass or more and 5.0% by mass or less, 0.1% by mass or less. The above-mentioned 2.0 mass% or less of Si and, if necessary, 0.005 mass% or more and 1.0 mass% or less in total, are selected from the group consisting of Sn, Zn, Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf. At least one kind, and the remainder is composed of copper and unavoidable impurities. In the crystal orientation analysis by the electron backscatter diffraction method, the area ratio of the cubic orientation {001}<100> is 5% or more and 50% or less. addition to those preferred orientation of cubic grains having an average grain area of 1.8 m 2 or less than 2 45.0μm, and thus the average grain area of crystal grains of the base material is 50 m 2 or less. In the bending characteristics, cracks are not generated at the top of the bend. Further, among the characteristics of the bending coefficient, the bending coefficient anisotropy is within 10 GPa, and in the characteristic of the guaranteed stress, the stress anisotropy is ensured to be within 10 MPa, and the anisotropy is small.

因此,本發明之銅合金板材可提供一種適用於電氣、電子機器用之引線框架、連接器、端子材等,及汽車車載用等之連接器或端子材、繼電器、開關等的銅合金板材。 Therefore, the copper alloy sheet material of the present invention can provide a copper alloy sheet material suitable for a lead frame, a connector, a terminal material, and the like for electric and electronic equipment, and a connector or a terminal material, a relay, a switch, or the like for an automobile.

又,如表2所示,於比較例之試樣中,成為任一特性較差之結果。 Further, as shown in Table 2, in the samples of the comparative examples, the results were inferior in any of the characteristics.

即,由於比較例1、2、4之立方方位晶粒的平均晶粒面積過大,故而BW之彎曲特性及彎曲係數異向性、保證應力異向性較差。由於比較例3之立方方位面積率過小,故彎曲特性(GW、BW)及彎曲異向性、保證應力異向性較差。 That is, since the average crystal grain size of the cubic azimuth crystal grains of Comparative Examples 1, 2, and 4 is too large, the BW has a bending property and a bending coefficient anisotropy, and the stress anisotropy is poor. Since the cubic azimuth area ratio of Comparative Example 3 is too small, the bending characteristics (GW, BW) and the bending anisotropy are ensured, and the stress anisotropy is poor.

再者,導電率均顯示為30~45%IACS。 Furthermore, the conductivity is shown to be 30 to 45% IACS.

(先前例) (previous example)

對下述表3所記載之合金組成(剩餘部分為銅(Cu))進行中間退火[步驟7]及中間溫壓延[步驟8]中之加熱,除此以外,以與上述實施例1相同之方式製作銅合金板材。對結果所獲得之銅合金板材之供試材以與上述實施例1相同之方法進行評價。將其結果示於表4中。 The alloy composition described in Table 3 below (the remainder being copper (Cu)) was subjected to intermediate annealing [Step 7] and intermediate temperature rolling [Step 8], except that the same as in the above Example 1 was carried out. The way to make copper alloy sheets. The test materials of the copper alloy sheets obtained as a result were evaluated in the same manner as in the above Example 1. The results are shown in Table 4.

由表3、4中可知,未滿足本發明所規定之合金組成,未進行中間退火[步驟7]且未經由其後之中間溫壓延[步驟8]中之加熱而製作之先前例1、2的銅合金板材,即便採用該等2個步驟以外之製造條件(各步驟及條件),任一者之立方方位之平均晶粒面積均較大,每1區塊之立方粒之個數較少,且彎曲係數與保證應力之異向性變大。 As can be seen from Tables 3 and 4, the prior examples 1 and 2 which were not satisfied with the alloy composition specified in the present invention and which were not subjected to the intermediate annealing [Step 7] and were not heated by the intermediate temperature rolling [Step 8] thereafter. For the copper alloy sheet, even if the manufacturing conditions (each step and condition) other than the two steps are adopted, the average grain area of the cube orientation of either one is larger, and the number of cubes per block is less. And the bending coefficient and the anisotropy of the guaranteed stress become larger.

又,雖然滿足本發明所規定之合金組成,但未進行中間退火[步驟7]且未經由其後之中間溫壓延[步驟8]中之加熱而製作之先前例3的銅合金板材,即便採用該等2個步驟以外之製造條件(各步驟及條件),任一者之立方方位之平均晶粒面積均較大,每1區塊之立方粒之個數較少,彎曲之特性(BW)較差,且彎曲係數與保證應力之異向性變大。 Further, although the alloy composition of the present invention is satisfied, the copper alloy sheet of the prior art 3 which has not been subjected to the intermediate annealing [Step 7] and has not been heated by the intermediate temperature rolling [Step 8] thereafter, even if The manufacturing conditions (each step and condition) other than the two steps, the average grain area of the cube orientation of any one of the blocks is large, and the number of cubic particles per block is small, and the bending property (BW) Poor, and the anisotropy of the bending coefficient and the guaranteed stress becomes large.

與該等不同,關於利用先前之製造條件所製造之銅合金板材,為了明確與本發明之銅合金板材之不同,以該先前之製造條件製作銅合金板材,並進行與上述相同之特性項目之評價。再者,各板材之厚度只要未特別說明,則以成為與上述實施例相同厚度之方式調整加工率。 Unlike these, regarding the copper alloy sheet produced by the previous manufacturing conditions, in order to clarify the difference from the copper alloy sheet of the present invention, a copper alloy sheet is produced under the previous manufacturing conditions, and the same characteristic items as described above are performed. Evaluation. In addition, unless otherwise indicated, the thickness of each plate material is adjusted so that it may become the same thickness as the above-mentioned Example.

(比較例101)...日本特開2011-162848公報本發明例1之條件 (Comparative Example 101). . . Japanese Laid-Open Patent Publication No. 2011-162848, the conditions of the present invention

使由3.2質量%之Ni、0.7質量%之Si、1.0質量%之Zn、0.2質量%之Sn構成之組成的銅合金熔化,並進行鑄造。進行所獲得之鑄塊之端面切削,於均質化熱處理後以結束溫度成為550~850℃之方式進行熱壓延,並於利用水浴冷卻 之急冷之後,將表層之氧化層利用機械研磨去除(端面切削)。繼而,於藉由冷壓延而壓延至特定板厚後,進而以90%以上之加工率進行冷壓延,以0.1℃/s以下之升溫速度加熱至800~900℃之溫度而進行固溶處理。 A copper alloy composed of 3.2% by mass of Ni, 0.7% by mass of Si, 1.0% by mass of Zn, and 0.2% by mass of Sn was melted and cast. The end face of the obtained ingot is cut, and after the homogenization heat treatment, the calendering is performed at a temperature of 550 to 850 ° C, and is cooled by a water bath. After quenching, the oxide layer of the surface layer is removed by mechanical grinding (end face cutting). Then, after rolling to a specific thickness by cold rolling, it is further cold-rolled at a processing ratio of 90% or more, and heated to a temperature of 800 to 900 ° C at a temperature increase rate of 0.1 ° C / s or less to carry out a solution treatment.

繼而,於500℃進行時效處理。時效處理時間係視銅合金之組成而調整為於460℃之溫度之時效下硬度成為峰值的時間。再者,關於該時效處理時間,係根據本發明例1之合金組成藉由預實驗而求出最佳之時效處理時間。 Then, aging treatment was carried out at 500 °C. The aging treatment time is adjusted to the time when the hardness becomes a peak at the temperature of 460 ° C depending on the composition of the copper alloy. Further, regarding the aging treatment time, the optimum aging treatment time was determined by preliminary experiments according to the alloy composition of Example 1 of the present invention.

繼而,對上述時效處理後之板材進一步以40%之壓延率實施最終冷壓延。進而,於480℃實施30秒之低溫退火。再者,視需要於中途進行研磨、端面切削,板厚統一為0.10mm。 Then, the aging-treated sheet was further subjected to final cold rolling at a rolling ratio of 40%. Further, low temperature annealing was performed at 480 ° C for 30 seconds. Furthermore, the grinding and the end face cutting were performed in the middle as needed, and the plate thickness was unified to 0.10 mm.

將其設為試樣c01。 This was set as sample c01.

所獲得之試驗體c01與上述本發明之實施例於製造條件方面相比,未進行中間退火[步驟7],亦未實施固溶熱處理[步驟9]前之加熱溫度下之中間溫壓延[步驟8]。又,由於固溶熱處理之升溫速度較慢,故於到達溫度附近粒成長變得顯著,晶粒粗大化。所獲得之組織之立方方位晶粒之面積大於150μm2以上。又,彎曲係數及強度之異向性亦較大為分別大於10GPa、大於15MPa,成為不滿足本發明中之要求特性之結果。 The obtained test body c01 is not subjected to intermediate annealing in the production conditions as compared with the above-described embodiment of the present invention [Step 7], and the intermediate temperature rolling at the heating temperature before the solution heat treatment [Step 9] is not performed. 8]. Further, since the temperature increase rate of the solution heat treatment is slow, the grain growth becomes remarkable near the reaching temperature, and the crystal grains are coarsened. The area of the cubic azimuth grains of the obtained structure is more than 150 μm 2 or more. Further, the anisotropy of the bending coefficient and the strength is also larger than 10 GPa and more than 15 MPa, respectively, and the result is that the characteristics required in the present invention are not satisfied.

(比較例102)...日本特開2011-12321公報實施例1及實施例4之條件 (Comparative Example 102). . . The conditions of the first embodiment and the fourth embodiment of the Japanese Patent Laid-Open Publication No. 2011-12321

將由2.8質量%之Ni、0.9質量%之Si構成之組成的銅 合金(該公報之實施例1),及由2.8質量%之Ni、0.9質量%之Si、0.1質量%之Zn、0.1質量%之Mg、0.1質量%之Sn構成之組成的銅合金(該公報之實施例4)之各合金於無芯爐(高頻感應熔解爐)中於木炭被覆下進行大氣熔解,並於4邊由銅模包圍之鑄模中進行鑄造,製作厚度為250mm、寬度為620mm、長度為2500mm之鑄塊。 Copper composed of 2.8% by mass of Ni and 0.9% by mass of Si Alloy (Example 1 of the publication) and a copper alloy composed of 2.8% by mass of Ni, 0.9% by mass of Si, 0.1% by mass of Zn, 0.1% by mass of Mg, and 0.1% by mass of Sn (this publication) Each of the alloys of Example 4) was melted in a coreless furnace (high frequency induction melting furnace) under charcoal coating, and cast in a mold surrounded by a copper mold at four sides to have a thickness of 250 mm and a width of 620 mm. Ingots with a length of 2500 mm.

繼而,於鑄模之寬度155mm位置與厚度125mm位置之交點位置,將直徑為3mm之SUS棒自鑄模上端部之液面於鉛垂方向插入並測定未凝固部之深度。將自所獲得之未凝固部深度減去鑄模長度(銅模長度)而得之值定義為自鑄模下端深度至凝固結束深度為止之距離。具體而言為300mm(該公報之實施例1)及260mm(該公報之實施例4)。以該距離成為250mm以上之方式,於50~200mm/分鍾之範圍內調整鑄造速度進行鑄造而獲得鑄塊。 Then, at the intersection of the position of the mold 155 mm and the position of the thickness of 125 mm, the diameter is A 3 mm SUS rod was inserted from the upper surface of the upper end of the mold in the vertical direction and the depth of the unsolidified portion was measured. The value obtained by subtracting the length of the mold (length of the copper mold) from the obtained depth of the unsolidified portion is defined as the distance from the depth from the lower end of the mold to the depth at which the solidification ends. Specifically, it is 300 mm (Example 1 of the publication) and 260 mm (Example 4 of the publication). The ingot is obtained by adjusting the casting speed in the range of 50 to 200 mm/min so that the distance becomes 250 mm or more.

自所獲得之鑄塊切割固定部之250×620×300mm之區塊並取出,自寬度為620mm之中央部收取鑄造方向與平行剖面之切片(250×15×300mm)。由將其浸於硝酸0.5~1小時並進行蝕刻而得之巨組織獲得柱狀晶之[100]軸方向。測定與鑄造方向正交之面和柱狀晶之[100]軸方向相交的角度。具體而言為13°(該公報之實施例1)及11°(該公報之實施例4)。 A 250 × 620 × 300 mm block of the obtained ingot was cut and fixed, and a section (250 × 15 × 300 mm) of a casting direction and a parallel section was taken from a central portion having a width of 620 mm. The giant structure obtained by immersing it in nitric acid for 0.5 to 1 hour and etching is obtained in the [100] axis direction of the columnar crystal. The angle at which the plane orthogonal to the casting direction intersects with the [100] axis direction of the columnar crystal is measured. Specifically, it is 13° (Example 1 of the publication) and 11° (Example 4 of the publication).

進而於對鑄塊進行均質化處理之後,將溫度調整為500~1000℃,並進行合計加工率為60~96%之壓延,其後對所獲得之壓延材直接進行水浴冷卻而製成厚度約為10mm 之線圈。對該壓延材之表面進行研磨而去除氧化皮。將該時間點上之壓延材之立方方位比例設為5~95%。其後,以記載之順序實施加工率為85~99.8%之冷壓延、於700~1020℃進行5秒~1小時之固溶熱處理、加工率為1~6.0%之最終冷壓延、於200~600℃進行5秒~10小時之調質退火,獲得厚度為0.15mm之供試材。 Further, after the ingot is homogenized, the temperature is adjusted to 500 to 1000 ° C, and the total processing ratio is 60 to 96%, and then the obtained rolled material is directly subjected to water bath cooling to have a thickness of about 10mm The coil. The surface of the rolled material is ground to remove scale. The cubic azimuth ratio of the rolled material at this time point is set to 5 to 95%. Thereafter, in the order described, the processing rate is 85 to 99.8% cold rolling, and the solution heat treatment is performed at 700 to 1020 ° C for 5 seconds to 1 hour, and the processing rate is 1 to 6.0% of the final cold rolling, at 200~ The quenching and tempering was performed at 600 ° C for 5 seconds to 10 hours to obtain a test material having a thickness of 0.15 mm.

將該等分別設為試樣d01(該公報之實施例1)及d02(該公報之實施例4)。 These were respectively referred to as sample d01 (Example 1 of the publication) and d02 (Example 4 of the publication).

所獲得之試驗體d01及d02與上述本發明之實施例於製造條件方面相比,未進行中間退火[步驟7],亦未實施固溶熱處理[步驟9]前之加熱溫度下的中間溫壓延[步驟8]。關於所獲得之組織之立方方位晶粒的面積率,分別為試樣d01(該公報之實施例1)為35%及試樣d02(該公報之實施例4)為7%,且粒成長變明顯,含有立方方位之晶粒之母材的平均晶粒面積較粗大,分別為試樣d01(該公報之實施例1)為254μm2及試樣d02(該公報之實施例4)為201μm2。又,彎曲係數及強度之異向性亦較大,分別為大於10GPa、大於15MPa,成為未滿足本發明中之要求特性之結果。 The obtained test bodies d01 and d02 were not subjected to intermediate annealing in the production conditions as compared with the above-described examples of the present invention [Step 7], and the intermediate temperature rolling at the heating temperature before the solution heat treatment [Step 9] was not performed. [Step 8]. Regarding the area ratio of the cubic azimuth grains of the obtained structure, the sample d01 (Example 1 of the publication) was 35% and the sample d02 (Example 4 of the publication) was 7%, and the grain growth was changed. It is apparent that the average crystal grain area of the base material containing the cubic orientation crystal grains is coarse, and the sample d01 (Example 1 of the publication) is 254 μm 2 and the sample d02 (Example 4 of the publication) is 201 μm 2 . . Further, the anisotropy of the bending coefficient and the strength is also large, and is more than 10 GPa and more than 15 MPa, respectively, which is a result of not satisfying the required characteristics in the present invention.

雖說明本發明與其實施態樣,但只要本發明沒有特別指定,則即使在說明本發明之任一細部中,皆非用以限定本發明,且只要在不違反本案申請專利範圍所示之發明精神與範圍下,應作最大範圍的解釋。 The present invention is not limited to the details of the present invention, and is not intended to limit the invention, and is not intended to be inconsistent with the scope of the invention. Under the spirit and scope, the maximum scope should be explained.

本案主張基於2011年5月2日於日本提出申請之特願2011-102996之優先權,本發明係參照此申請案並將其內 容加入作為本說明書記載之一部份。 The present application claims priority based on Japanese Patent Application No. 2011-102996, filed on Jan. Addition is part of the description of this manual.

圖1係說明以相鄰之4個區塊為1群且至少4群以上之情形時之等分散性的圖式。 Fig. 1 is a view for explaining the dispersibility in the case where four adjacent blocks are one group and at least four groups are used.

Claims (8)

一種銅合金板材,其具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si,且剩餘部分由銅及不可避免之雜質構成;於利用電子背向散射繞射法(Electron Back Scatter Diffraction)之結晶方位分析中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之面積率為5%以上50%以下,具有自立方方位{001}<100>偏移15°以內之方位的晶粒於60μm見方內分散40個以上100個以下。 A copper alloy sheet material having a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less of Si, and the remainder being composed of copper and unavoidable impurities; In the crystal orientation analysis of the Electron Back Scatter Diffraction, the area ratio of the crystal grains having an orientation within 15° from the cubic orientation {001}<100> is 5% or more and 50% or less, and has a self-supporting state. The grain in which the square orientation {001}<100> is shifted within 15° is dispersed in 40 or more and 100 or less in 60 μm square. 如申請專利範圍第1項之銅合金板材,其中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之平均晶粒面積為1.8μm2以上45.0μm2以下。 The scope of the patent copper alloy sheet material of item 1, wherein the side having self-orientation {001} <100> of the average grain area of crystal grains of less than 15 ° Azimuth is 1.8 m 2 or less than 2 45.0μm. 一種銅合金板材,其具有下述組成:含有1.0質量%以上5.0質量%以下之Ni、0.1質量%以上2.0質量%以下之Si、合計為0.005質量%以上1.0質量%以下之選自由Sn、Zn、Ag、Mn、B、P、Mg、Cr、Zr、Fe及Hf組成之群中之至少一者,且剩餘部分由銅及不可避免之雜質構成;且於利用電子背向散射繞射法之結晶方位分析中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之面積率為5%以上50%以下,具有自立方方位{001}<100>偏移15°以內之方位的晶粒於60μm見方內分散40個以上100個以下。 A copper alloy sheet material having a composition containing 1.0% by mass or more and 5.0% by mass or less of Ni, 0.1% by mass or more and 2.0% by mass or less of Si, and a total of 0.005% by mass or more and 1.0% by mass or less selected from the group consisting of Sn and Zn. At least one of a group consisting of Ag, Mn, B, P, Mg, Cr, Zr, Fe, and Hf, and the remainder consisting of copper and unavoidable impurities; and utilizing an electron backscatter diffraction method In the crystal orientation analysis, the area ratio of the crystal grains having an orientation within 15° from the cubic orientation {001}<100> is 5% or more and 50% or less, and has a shift of 15° from the cubic orientation {001}<100>. The crystal grains within the orientation are dispersed in 40 or more and 100 or less in 60 μm square. 如申請專利範圍第3項之銅合金板材,其中,具有自立方方位{001}<100>偏移15°以內之方位的晶粒之平均晶 粒面積為1.8μm2以上45.0μm2以下。 The patentable scope of application of the copper alloy sheet material of item 3, wherein the standing side having orientation {001} <100> of the average grain area of crystal grains of 15 ° shifted position within 1.8 m 2 or more is 2 or less 45.0μm. 如申請專利範圍第1至4項中任一項之銅合金板材,其中,母材之晶粒的平均晶粒面積為50μm2以下。 The copper alloy sheet material according to any one of claims 1 to 4, wherein the crystal grains of the base material have an average crystal grain size of 50 μm 2 or less. 如申請專利範圍第1至4項中任一項之銅合金板材,其中,壓延平行方向之彎曲係數與壓延垂直方向之彎曲係數的差以絕對值計為10GPa以下,壓延平行方向之保證應力與壓延垂直方向之保證應力的差以絕對值計為10MPa以下。 The copper alloy sheet material according to any one of claims 1 to 4, wherein a difference between a bending coefficient in a rolling parallel direction and a bending coefficient in a rolling vertical direction is 10 GPa or less in absolute value, and a guaranteed stress in a rolling parallel direction is The difference in the guaranteed stress in the rolling vertical direction is 10 MPa or less in absolute value. 如申請專利範圍第5項之銅合金板材,其中,壓延平行方向之彎曲係數與壓延垂直方向之彎曲係數的差以絕對值計為10GPa以下,壓延平行方向之保證應力與壓延垂直方向之保證應力的差以絕對值計為10MPa以下。 For example, in the copper alloy sheet of claim 5, wherein the difference between the bending coefficient in the parallel direction of rolling and the bending coefficient in the vertical direction of rolling is 10 GPa or less in absolute value, and the guaranteed stress in the parallel direction of rolling and the guaranteed stress in the vertical direction of rolling The difference is 10 MPa or less in absolute value. 一種銅合金板材之製造方法,對鑄造銅合金原材料而獲得之鑄塊實施均質化熱處理及熱壓延,進而於藉由冷壓延成形為薄板後,實施使該薄板中之溶質原子再固溶之中間固溶熱處理;該銅合金原材料係具有申請專利範圍第1或3項之銅合金板材的合金組成而成;該銅合金板材之製造方法依序包含下述各步驟而成:於800℃以上1020℃以下進行3分鐘至10小時該均質化熱處理,以壓延率為80%以上99.8%以下進行該冷壓延後,於未達再結晶溫度即400℃以上700℃以下之溫度進行5秒至20小時之中間退火, 進而於加熱至100℃以上400℃以下後,於該溫度下進行壓延率為5%以上50%以下之中間溫壓延,然後於600℃以上1000℃以下以5秒至1小時進行該中間固溶熱處理,於400℃以上700℃以下進行5分鐘至10小時之時效析出熱處理。 A method for producing a copper alloy sheet, which performs homogenization heat treatment and hot rolling on an ingot obtained by casting a copper alloy material, and further forms a thin plate by cold rolling, and then re-solidifies the solute atoms in the sheet. Intermediate solution heat treatment; the copper alloy raw material is composed of an alloy of a copper alloy plate material according to claim 1 or 3; the method for manufacturing the copper alloy plate comprises the following steps in sequence: above 800 ° C The homogenization heat treatment is carried out at 1020 ° C or lower for 3 minutes to 10 hours, and after the cold rolling is performed at a rolling ratio of 80% or more and 99.8% or less, the temperature is not more than the recrystallization temperature, that is, 400 ° C or more and 700 ° C or less for 5 seconds to 20 seconds. Intermediate annealing in hours, Further, after heating to 100° C. or higher and 400° C. or lower, the calendering rate is 5% or more and 50% or less at the intermediate temperature, and then the intermediate solution is performed at 600° C. or more and 1000° C. or less for 5 seconds to 1 hour. The heat treatment is performed at 400 ° C or more and 700 ° C or less for 5 minutes to 10 hours.
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