TWI577055B - Wavelength converting film and manufacturing method thereof - Google Patents

Description

Wavelength conversion film and manufacturing method thereof

The present invention relates to a wavelength conversion structure, and more particularly to a wavelength conversion film and a method of fabricating the same.

The conventional method for packaging a light-emitting diode chip is generally to directly seal a light-emitting diode chip by means of dispensing, such as an AB glue, wherein the packaged colloid is also filled with fluorescent particles to change the light-emitting diode. The color of the exit of the polar body wafer. However, the above-described dispensing method cannot complete the package of a plurality of light-emitting diode wafers at one time, resulting in production time and manufacturing cost.

In addition, the solid content of the encapsulant is low, and the fluorescent particles in the encapsulant are also susceptible to gravity before the curing, and the precipitation phenomenon occurs, resulting in uneven distribution of the fluorescent particles in the encapsulant, so that The packaged LED package produces a phenomenon of uneven light and color temperature.

The invention provides a wavelength conversion film and a manufacturing method thereof, which can improve the settlement problem of the conventional fluorescent particles in the encapsulant, and has better manufacturing efficiency of the LED component.

The present invention provides a method of fabricating a wavelength conversion film comprising the following steps. A release film is provided. Performing at least one coating process to form at least one wavelength conversion layer on the release film, wherein at least one of the wavelength conversion layer and a first contact mask of the release film has a first roughness. Forming an adhesive layer on a surface of the wavelength conversion layer farthest from the release film, wherein the second contact mask of the adhesive layer and the wavelength conversion layer has a second roughness, and the second roughness is greater than the first roughness.

In an embodiment of the invention, the thickness of the at least one wavelength conversion layer is 1 to 3 times the thickness of the adhesive layer.

In an embodiment of the invention, the at least one wavelength conversion layer comprises a wavelength conversion substance and a colloid, and the at least one wavelength conversion layer is calculated by a total percentage of 100% of the composition, and the weight percentage of the wavelength conversion substance is 60%~ 95%.

In an embodiment of the invention, the thickness of each of the wavelength conversion layers is between 1.2 and 3 times the average particle diameter of the wavelength converting substance.

In an embodiment of the invention, after the forming the adhesive layer, the method further comprises: performing a stripping process to separate the release film and the at least one wavelength conversion layer.

In an embodiment of the invention, the adhesive layer is doped with a plurality of diffusion particles, reflective particles, scattering particles or at least two of the above.

In an embodiment of the invention, the at least one wavelength conversion layer includes a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer is disposed between the release film and the second wavelength conversion layer.

In an embodiment of the invention, the radiation main peak wavelength of the first wavelength conversion layer is smaller than the radiation main peak wavelength of the second wavelength conversion layer.

In an embodiment of the invention, the waveform half-height width of the second wavelength conversion layer is smaller than the waveform half-width of the first wavelength conversion layer.

In an embodiment of the invention, the thickness of the first wavelength conversion layer is greater than the thickness of the second wavelength conversion layer.

In an embodiment of the invention, the at least one coating process is a spin coating process.

In an embodiment of the invention, the at least one wavelength conversion layer comprises a wavelength converting substance and a colloid, wherein the wavelength converting substance is dispersed in the colloid. The at least one wavelength conversion layer has a first area and a second area. The concentration of the wavelength converting substance in the first region is greater than the concentration of the wavelength converting substance in the second region, and the second region surrounds the first region.

The invention provides a method for fabricating a wavelength conversion film for mounting at least one luminescent wafer. The method of fabricating the wavelength conversion film includes the following process steps. A release film is provided. Performing at least one coating process to form at least one wavelength conversion layer on the release film, wherein at least one of the wavelength conversion layer and a first contact mask of the release film has a first roughness. Forming an adhesive layer on a surface of the wavelength conversion layer farthest from the release film, wherein the adhesion layer and a second contact mask of the wavelength conversion layer have a second roughness, and the second roughness is greater than the first roughness And the adhesive layer is connected to at least one of the light Wafer.

The present invention provides a wavelength conversion film for mounting a light-emitting wafer. The wavelength conversion film includes a wavelength conversion layer and an adhesive layer. The wavelength conversion layer has a first surface and a second surface opposite to each other, wherein the first surface has a first roughness. The adhesive layer is connected to the second surface of the wavelength conversion layer, and is disposed between the wavelength conversion layer and the light emitting wafer, wherein a contact mask of the adhesive layer and the wavelength conversion layer has a second roughness, and the second roughness is greater than the first Roughness.

In an embodiment of the invention, the hardness of the wavelength conversion layer ranges from Shore Dometer hardness 30D to 90D.

Based on the above, since the wavelength conversion film of the present invention is produced by a coating process on a release film to form a wavelength conversion layer, and an adhesion layer is formed on the surface of the wavelength conversion layer farthest from the release film. Therefore, compared with the conventional method of forming a light-emitting diode package by means of dispensing, the method for fabricating the wavelength conversion film of the present invention has a process which is easy to process, and can be subsequently applied to a light-emitting wafer to mass-produce a light-emitting element at a time. Therefore, in addition to the advantages of mass production, it is also possible to avoid the problem of settlement of the conventional fluorescent particles in the encapsulant and have better product reliability. In addition, the wavelength conversion layer formed by the method for fabricating the wavelength conversion film can also have a thin thickness, which can save the cost of the wavelength conversion layer.

The above described features and advantages of the invention will be apparent from the following description.

100, 100', 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h‧ ‧ wavelength conversion film

110‧‧‧ release film

121‧‧‧colloid

122, 122c, 122d, 122e, 122f, 124, 124c, 124d, 124e, 126, 126c‧‧‧ wavelength conversion layer

123‧‧‧ wavelength conversion substances

130, 130a‧‧‧ adhesive layer

132‧‧‧Diffusion particles

142, 144‧‧‧ adhesive layer

F1‧‧‧wavelength converting substance

F2‧‧‧ colloid

R1‧‧‧ first area

R2‧‧‧ second area

S‧‧‧ surface

S1‧‧‧ first contact surface

S2‧‧‧Second contact surface

W, W’‧‧‧ luminescent wafer

1A-1C are schematic cross-sectional views showing a partial step of a method for fabricating a wavelength conversion film according to an embodiment of the invention.

FIG. 1D is a schematic cross-sectional view of a wavelength conversion film according to an embodiment of the invention.

2 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

3 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

4 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

6 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention.

FIG. 8(a) is a cross-sectional view showing a wavelength conversion film for mounting a light-emitting wafer according to an embodiment of the invention.

FIG. 8(b) is a top plan view showing a wavelength conversion film for mounting a light-emitting wafer according to an embodiment of the invention.

FIG. 8(c) is a top plan view showing a wavelength conversion film for mounting a plurality of light-emitting wafers according to another embodiment of the present invention.

1A-1C are schematic cross-sectional views showing a partial step of a method for fabricating a wavelength conversion film according to an embodiment of the invention. Referring first to FIG. 1A, a release film 110 is provided, wherein the material of the release film 110 may be a transparent material such as epoxy resin, polyethylene terephthalate, silicone, polyurethane, polypropylene or dioxide. Hey.

Next, referring to FIG. 1B, at least one coating process is performed to form at least one wavelength conversion layer on the release film 110, wherein at least one of the wavelength conversion layer and a first contact surface S1 of the release film 110 has a first Roughness. The coating process here is, for example, a doctor blade coating process, a precision knife coating process, a push coating process, a wire bar coating process, a screen printing process, a spin coating process or a gravure coating process, The wavelength conversion substance F1 is mixed with a colloid F2 to obtain a wavelength conversion colloid (not shown). The wavelength conversion colloid is placed on the release film 110, and the wavelength conversion colloid is formed into a uniform wavelength conversion layer by a coating process. At this time, the wavelength conversion layer covers the release film 110. Among them, the coating process is preferably a doctor blade coating process or a precision knife coating process, which has the advantages of simple implementation.

In detail, in this embodiment, for example, the coating process is performed three times, and the three layers of wavelength conversion layers 122, 124, and 126 are sequentially stacked, but not limited thereto, wherein the wavelength conversion layer 122 is configured. Between the wavelength conversion layer 124 and the release film 110. Each wavelength conversion layer 122 (or 124, 126) includes a wavelength converting substance F1 and a colloid F2. The wavelength converting layer 122 (or 124, 126) is calculated as a total percentage of 100% of the composition, and the weight percentage of the wavelength converting substance F1. 60% to 95%, of which The ratio of the higher concentration of the wavelength converting substance F1 can increase the solid content of the colloid F2 in the wavelength conversion layer 122 (or 124, 126), thereby reducing the fluidity of the colloid F2, thereby making it easier to quantitatively colloid F2 It is disposed on the release film 110 to control the thickness of each of the wavelength conversion layers 122 (or 124, 126). Preferably, the thickness of the wavelength conversion layer 122 (or 124, 126) is 1.2 to 3 times the average particle diameter of the wavelength converting substance F1, so that the wavelength conversion film 100 after completion has a thin thickness, and The heat generated at the time of wavelength conversion is less likely to accumulate in the wavelength conversion layer 122 (or 124, 126). Moreover, the hardness range of the wavelength conversion layer 122 (or 124, 126) is Shore Durometer Hardness 30D to 90D, compared to the packaging material which is mostly known as Shore A, the present invention. The wavelength conversion film 100 can have better crack resistance and reliability. In the present embodiment, the extending direction of the formed wavelength conversion layers 122, 124, 126 is the same as the extending direction of the release layer 110. That is, the formed wavelength conversion layers 122, 124, 126 are embodied as planar structures. Preferably, each wavelength conversion layer 122 (or 124, 126) has a thickness between 15 microns and 80 microns, and more preferably each wavelength conversion layer 122 (or 124, 126) has a thickness less than 60 microns. The thickness of the wavelength conversion layers 122, 124, and 126 are the same, but in other embodiments, the thickness of the wavelength conversion layers 122, 124, and 126 may be different, and are not limited herein.

Finally, referring to FIG. 1C, an adhesive layer 130 is formed on a surface S of the wavelength conversion layer 126 farthest from the release film 110, wherein the adhesion layer 130 and a second contact surface S2 of the wavelength conversion layer 126 have a second surface. Roughness, and the second roughness is greater than the first roughness. Here, the thickness of the adhesive layer 130 is, for example, 5 micrometers to 35 micrometers. Preferably, the thickness of the adhesive layer 130 is less than 20 microns. The adhesive layer 130 covers the surface S of the wavelength conversion layer 126. In other words, the wavelength conversion layers 122, 124, and 126 of the present embodiment are located between the release film 110 and the adhesive layer 130. So far, the fabrication of the wavelength conversion film 100 has been completed. It should be noted that the release film 110 is disposed to protect the surface of the wavelength conversion layer 122 and allows the wavelength conversion layer 122 to form a planar structure. The adhesive layer 130 is disposed to allow the wavelength conversion film 100 to be attached to the entire surface. The luminescent wafer (not shown) is used to increase the application of the wavelength conversion film 100. In particular, the adhesion layer 130 may be formed using a coating process that forms the wavelength conversion layers 122, 124, 126 such that the thickness of each of the wavelength conversion layers 122, 124, 126 is approximately the same as the thickness of the adhesion layer 130. Preferably, each of the wavelength conversion layers 122, 124, 126 has a thickness of 1 to 3 times the thickness of the adhesive layer 130, so that the wavelength conversion film 100 has a more uniform thickness and a small volume.

Since the wavelength conversion film 100 of the present embodiment is formed by performing a coating process on the release film 110 to form the wavelength conversion layers 122, 124, 126, and on the surface S of the wavelength conversion layer 126 farthest from the release film 110. An adhesive layer 130 is formed. Therefore, the method for fabricating the wavelength conversion film 100 of the present embodiment has the advantages of being easy to manufacture and suitable for mass production, as compared with the conventional method of forming a sealing colloid for sealing a light-emitting diode by means of dispensing. It is also possible to avoid the problem of settlement of the conventional fluorescent particles in the encapsulant and have better product reliability. Furthermore, in the subsequent application, the wavelength conversion film 100 can be directly attached to the light-emitting wafer (not shown) through the adhesive layer 130, and the plurality of light-emitting elements (not shown) can be fabricated at one time. It has better ease of use. In addition, the wave formed by the method of fabricating the wavelength conversion film 100 The long conversion layer 122, 124, 126 is embodied as a planar structure, so that the wavelength conversion film 100 can have a thinner thickness, will have a smaller volume on a light-emitting element (not shown), and can save a wavelength conversion film. the cost of.

Furthermore, the wavelength conversion layers 122, 124, and 126 of the present embodiment have a thin shape (1.2 to 3 times the average particle diameter of the wavelength conversion substance F1) and a high concentration (the weight percentage of the wavelength conversion substance F1 is 60% to 95%). And the high hardness (Shore hardness 30D~90D), the wavelength conversion film 100 of the present embodiment can simultaneously achieve the effect of thinning and protecting the components (such as light-emitting elements, not shown) which are adhered thereto. In addition, since the release film 110 of the present embodiment is very smooth, when the coating process forms the wavelength conversion layer 122 on the release film 110, the colloid F2 in the wavelength conversion layer 122 is filled with the wavelength conversion substance F1 and the release film. The gap between the 110s is such that the roughness of the wavelength conversion layer 122 and the first contact surface S1 of the release film 110 is low. On the other hand, the wavelength conversion substance F1 in the wavelength conversion layer 126 has a large particle (for example, between 15 and 30 micrometers) and a high concentration, so that the surface S of the wavelength conversion layer 126 has a relatively high roughness and is between the adhesion layer 130 and the adhesion layer 130. Adhesion is also large. Therefore, the second roughness of the second contact surface S2 of the wavelength conversion layer 126 and the adhesive layer 130 is greater than the first roughness of the first contact surface S1 of the wavelength conversion layer 122 and the release film 110. Since the second roughness is greater than the first roughness, when the adhesive layer 130 is adhered to the subsequent application of the luminescent wafer (not shown), the light can be easily entered from the adhesive layer 130 into the wavelength conversion layer 122, 124, 126. The light can be sufficiently wavelength-transformed by the wavelength conversion layers 122, 124, and 126 to emit light.

It should be noted that the following embodiments follow the component numbers and parts of the foregoing embodiments, wherein the same reference numerals are used to denote the same or similar elements. And the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

FIG. 1D is a schematic cross-sectional view of a wavelength conversion film according to an embodiment of the invention. The wavelength conversion film 100' of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference between the two is that after the adhesive layer 130 is formed, the method further includes: performing a stripping process to separate The release film 110 and the wavelength conversion layers 122, 124, and 126 form a wavelength conversion film 100' having no release film 110.

2 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 1C and FIG. 2 simultaneously, the wavelength conversion film 100a of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference is that the adhesion layer 130a of the wavelength conversion film 100a of the present embodiment is A plurality of diffusion particles 132 are doped. When the wavelength conversion film 100a is subsequently adhered to the light-emitting wafer (not shown), the light generated by the light-emitting element (not shown) can be scattered to help improve the luminous efficiency of the overall product. In particular, in addition to the diffusing particles, the adhesive layer 130a may be doped with reflective particles (not shown), scattering particles (not shown), or at least two of the above, which allow the light generated by the light-emitting element. The effect of scattering, reflection and diffusion is still within the scope of the invention to be protected.

3 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 1C and FIG. 3 simultaneously, the wavelength conversion film 100b of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference between the two is that the wavelength conversion film 100b of the present embodiment is Between any two coating processes, an adhesive layer is formed on the wavelength conversion layer formed by the previous coating process. and also That is, the adhesive layer 142 is formed after the wavelength conversion layer 122 and before the wavelength conversion layer 124. The adhesive layer 144 is formed after the wavelength conversion layer 124 and before the wavelength conversion layer 126. Here, the purpose of forming the adhesive layers 142, 144 is to increase the adhesion between the wavelength conversion layer 122 and the wavelength conversion layer 124 and between the wavelength conversion layer 124 and the wavelength conversion layer 126, and adjust the surface tension thereof, and allow wavelength conversion. The stacking of the layers 122, 124, 126 via the adhesive layer 142 has the effect of planarizing the surface to a surface roughness of less than 5 microns. Of course, the adhesion layer 142, 144 may be doped with diffusion particles (not shown), reflective particles (not shown), scattering particles (not shown) or at least two of the above, so that the subsequent wavelength conversion film 100b When it is adhered to a light-emitting element (not shown), the light generated by the light-emitting element can be scattered, reflected and diffused, which is still within the scope of the present invention.

4 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 4 and FIG. 1C, the wavelength conversion film 100c of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference is that the first wavelength conversion layer 122c has a radiation main peak wavelength smaller than the second wavelength. The main peak wavelength of the radiation of the wavelength conversion layer 124c. For example, the emission main peak wavelength of the wavelength conversion layer 124c may be greater than the emission main peak wavelength of the wavelength conversion layer 122c, and the emission main peak wavelength of the wavelength conversion layer 126c may be greater than the emission main peak wavelength of the wavelength conversion layer 124c. Such an arrangement allows light converted by the wavelength conversion layer 126c having a longer main wavelength of the radiation to be absorbed by the wavelength conversion layers 124c, 122c having a shorter main wavelength of the radiation, and so on. More specifically, the wavelength conversion layer 126c can be a red wavelength conversion layer, and the wavelength conversion layer 124c can be a yellow wavelength conversion. The layer, and the wavelength conversion layer 122c can be a green wavelength conversion layer.

Of course, in other embodiments, the main wavelength of the radiation of the wavelength conversion layers 122c, 124c, and 126c may also decrease toward the direction away from the release film 110. For example, the radiation main peak wavelength of the wavelength conversion layer 122c is larger than the radiation main peak wavelength of the wavelength conversion layer 124c, and the radiation main peak wavelength of the wavelength conversion layer 124c is larger than the emission main peak wavelength of the wavelength conversion layer 126c. The user can match the order of the wavelength conversion layers 122c, 124c, and 126c according to the type of the light-emitting wafer to be used.

It should be noted that the wavelength conversion films 100, 100', 100a, and 100b are exemplified by having three layers of wavelength conversion layers 122, 124, and 126. However, in other embodiments not shown, the wavelength conversion film is also used. It may have only one layer of the wavelength conversion layer; or, a two-layer wavelength conversion layer; or a wavelength conversion layer of more than three layers, which is still within the scope of the present invention.

FIG. 5 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 5 and FIG. 1C simultaneously, the wavelength conversion film 100d of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference is that the wavelength conversion layer of the embodiment has only two layers, the first The wavelength conversion layer 122d and the second wavelength conversion layer 124d have different thicknesses of the wavelength conversion layers 122d and 124d. Preferably, the thickness of these wavelength conversion layers 122d, 124d is gradually decreased toward the direction away from the release film 110. That is, the thickness of the first wavelength conversion layer 122d is greater than the thickness of the second wavelength conversion layer 124d. For example, when the wavelength conversion layer 124d is a red wavelength conversion layer and the wavelength conversion layer 122d is a green wavelength conversion layer, the thickness of the wavelength conversion layer 124d may be 0.2 to 0.4 times the thickness of the wavelength conversion layer 122d, which may be reduced. higher cost The amount of red fluorescent powder can effectively reduce the manufacturing cost of the entire wavelength conversion film 100d.

6 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 6 and FIG. 1C simultaneously, the wavelength conversion film 100e of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference is that the wavelength conversion layer of the embodiment has only two layers, the first The wavelength conversion layer 122e and the second wavelength conversion layer 124e have different half-widths of the waveforms of the wavelength conversion layers 122e and 124e. Preferably, the full width at half maximum of the second wavelength conversion layer 124e is smaller than the full width at half maximum of the first wavelength conversion layer 122e, so that the wavelength of the emitted light of the wavelength conversion unit layer 122e is prevented from covering the absorption band of the wavelength conversion layer 124e. Provides a wide spectrum of color rendering performance. More specifically, the wavelength conversion layer 124e may be a red wavelength conversion layer, and the wavelength conversion layer 122e may be a green wavelength conversion layer, and the waveform half width of the red wavelength conversion layer is smaller than the waveform half height width of the green wavelength conversion layer.

FIG. 7 is a cross-sectional view showing a wavelength conversion film according to another embodiment of the present invention. Referring to FIG. 7 and FIG. 1C simultaneously, the wavelength conversion film 100f of the present embodiment is similar to the wavelength conversion film 100 of FIG. 1C, but the main difference is that the wavelength conversion layer 122f of the embodiment has only one layer, wherein the wavelength The conversion layer 122f includes a colloid 121 and a wavelength converting substance 123. In detail, the wavelength converting substance 123 is dispersed in the colloid 121, and the wavelength converting layer 122f has the first region R1 and the second region R2, wherein the concentration of the wavelength converting substance 123 in the first region R1 is greater than the wavelength in the second region R2 The substance 123 is converted in density, and the second region R2 surrounds the first region R1.

In the process, the method and the diagram of the wavelength conversion film 100f of the embodiment The wavelength conversion film 100 of 1A to 1C is produced in the same manner, except that the coating process of the present embodiment is substantially a spin coating process. More specifically, in the present embodiment, the first region R1 and the second region R2 having different wavelength conversion substance 123 concentrations are generated by a centrifugal coating process using a centrifugal force and a viscosity of the colloid 121. In the application of the subsequent wavelength conversion film 100f, a forward-emitting light-emitting wafer (not shown) can be used to improve the light-emitting and color temperature uniformity of the product.

8(a) to 8(c) are schematic views showing a wavelength conversion film of the present invention mounted on a light-emitting wafer. For convenience of explanation, FIG. 8( a ) is a schematic cross-sectional view, and FIGS. 8( b ) and 8 ( c ) are schematic plan views. Referring to FIG. 8(a) and FIG. 8(b), the manufacturing method of the wavelength conversion film 100g of the present embodiment is the same as the manufacturing process of the wavelength conversion film 100 of the above-mentioned FIG. 1A to FIG. 1C, and the difference lies in: The wavelength conversion film 100g is used to mount at least one light-emitting wafer W (only one light-emitting wafer is schematically shown in FIG. 8(a)). In detail, the adhesive layer 130 of the present embodiment is connected to the light-emitting wafer W, and the adhesive layer 130 is disposed between the wavelength conversion layer 126 and the light-emitting wafer W, wherein the size (such as the surface area of the wavelength conversion film 100g of the embodiment) ) is larger than the size (such as surface area) of the light-emitting wafer W. Therefore, the wavelength conversion film 100g is adhered to the light-emitting wafer W through the wave adhesion layer 130. This method has no problem of component alignment and can have better process efficiency. Further, when the release film process is subsequently performed and the release film 110 and the wavelength conversion layer 122 are separated, the color temperature performance of the element is not affected by the displacement of the wavelength conversion layer. In particular, the size (e.g., surface area) of the wavelength conversion film 100g of the present embodiment may be larger than the size (e.g., surface area) of the plurality of light-emitting wafers W. As shown in Fig. 8(c), the wavelength conversion film 100h can be simultaneously adhered to the plurality of light-emitting wafers W', which has better usability and ease of assembly, and can have better process efficiency.

It is to be noted that the size (e.g., surface area) of the wavelength conversion films 100g, 100h in the above embodiments is substantially larger than the size (e.g., surface area) of the light-emitting wafers W, W'. Therefore, the wavelength conversion films 100g and 100h can be attached directly to the light-emitting wafers W and W' directly through the adhesive layer 130 without cutting, and can have advantages such as better usability and ease of assembly.

Based on the above, since the wavelength conversion film of the present invention is produced by a coating process on a release film to form a wavelength conversion layer, and an adhesion layer is formed on the surface of the wavelength conversion layer farthest from the release film. Therefore, the method for fabricating the wavelength conversion film of the present invention can be avoided in addition to the advantages of being easy to manufacture and suitable for mass production, as compared with the conventional method of forming a light-emitting diode package by dispensing. Knowing the problem of sedimentation of the fluorescent particles in the encapsulant has better product reliability. Furthermore, the wavelength conversion layer formed by the method of fabricating the wavelength conversion film may have a relatively thin thickness. In addition, in the subsequent application, the wavelength conversion film can be directly attached to the luminescent wafer through the adhesive layer, which can have better usability.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧ wavelength conversion film

110‧‧‧ release film

122, 124, 126‧‧‧ wavelength conversion layer

S‧‧‧ surface

S1‧‧‧ first contact surface

S2‧‧‧Second contact surface

130‧‧‧Adhesive layer

Claims (14)

A method for fabricating a wavelength conversion film, comprising: providing a release film; performing at least one coating process to form at least one wavelength conversion layer on the release film, wherein the at least one wavelength conversion layer and the release film a first contact mask having a first roughness; forming an adhesive layer on a surface of the wavelength conversion layer farthest from the release film, wherein the adhesive layer and a second contact mask of the wavelength conversion layer have a second roughness, the second roughness being greater than the first roughness; and performing a stripping process to separate the release film from the at least one wavelength conversion layer from the first contact surface. The method for fabricating a wavelength conversion film according to claim 1, wherein each of the wavelength conversion layers has a thickness of 1 to 3 times a thickness of the adhesion layer. The method for fabricating a wavelength conversion film according to claim 1, wherein the at least one wavelength conversion layer comprises a wavelength conversion substance and a colloid, and the at least one wavelength conversion layer is calculated by a total percentage of 100% of components. The weight percentage of the wavelength converting substance is 60% to 95%. The method for fabricating a wavelength conversion film according to claim 3, wherein the thickness of the at least one wavelength conversion layer is between 1.2 and 3 times the average particle diameter of the wavelength conversion material. The method for fabricating a wavelength conversion film according to claim 1, wherein the adhesive layer is doped with a plurality of diffusion particles, reflective particles, scattering particles or the above At least two of them. The method for fabricating a wavelength conversion film according to claim 1, wherein the at least one wavelength conversion layer comprises a first wavelength conversion layer and a second wavelength conversion layer, wherein the first wavelength conversion layer is disposed in the release layer Between the film and the second wavelength conversion layer. The method for fabricating a wavelength conversion film according to claim 6, wherein a radiation main peak wavelength of the first wavelength conversion layer is smaller than a radiation main peak wavelength of the second wavelength conversion layer. The method for fabricating a wavelength conversion film according to claim 6, wherein the second half-wavelength conversion layer has a waveform half-width wider than a waveform half-width of the first wavelength conversion layer. The method for fabricating a wavelength conversion film according to claim 6, wherein the thickness of the first wavelength conversion layer is greater than the thickness of the second wavelength conversion layer. The method for fabricating a wavelength conversion film according to claim 1, wherein the at least one coating process is a spin coating process. The method for fabricating a wavelength conversion film according to claim 10, wherein the at least one wavelength conversion layer comprises a wavelength conversion substance and a colloid, the wavelength conversion substance is dispersed in the gel body, and the at least one wavelength conversion layer There is a first region and a second region, the wavelength conversion substance concentration in the first region is greater than the wavelength conversion substance concentration in the second region, and the second region surrounds the first region. A method for fabricating a wavelength conversion film for mounting at least one luminescent wafer, the method for fabricating the wavelength conversion film comprising: Providing a release film; performing at least one coating process to form at least one wavelength conversion layer on the release film, wherein the at least one wavelength conversion layer and the first contact mask of the release film have a first roughness Forming an adhesive layer on a surface of the wavelength conversion layer farthest from the release film, wherein the adhesion layer and a second contact mask of the wavelength conversion layer have a second roughness, and the second roughness The adhesion is greater than the first roughness, and the adhesive layer is coupled to the at least one luminescent wafer; and a stripping process is performed to separate the release film and the at least one wavelength conversion layer from the first contact surface. A wavelength conversion film for mounting a light-emitting wafer, the wavelength conversion film comprising: a wavelength conversion layer having a first surface and a second surface opposite to each other, wherein the first surface has a first roughness; And an adhesive layer connected to the second surface of the wavelength conversion layer, and disposed between the wavelength conversion layer and the light emitting wafer, wherein a contact mask of the adhesive layer and the wavelength conversion layer has a second roughness And the second roughness is greater than the first roughness. The method for fabricating a wavelength conversion film according to claim 1, wherein the at least one wavelength conversion layer has a hardness ranging from 30 D to 90 D.