TWI577051B - Package for semiconductor and semiconductor light-emitting apparatus - Google Patents

Description

Semiconductor package and semiconductor light emitting device

The present invention relates to a package for a semiconductor and a semiconductor light-emitting device.

Conventionally, a semiconductor package for accommodating a semiconductor element such as a light-emitting element such as an LED, an illuminance sensor, or an image sensor element such as a CMOS or a CCD is known.

For example, the semiconductor package of Patent Document 1 includes a base on which a semiconductor element is mounted, a lead frame electrically connected to the semiconductor element, and a resin that integrally fixes the base and the lead frame.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-252373

However, when a semiconductor element is mounted on a semiconductor package, or when a semiconductor package is mounted on a semiconductor substrate, or when a lead frame of a semiconductor package is cut, stress is applied to a part of the semiconductor package. For example, when a semiconductor element is mounted on a semiconductor package, the pressing force acts on the semiconductor package from the direction in which the semiconductor element is mounted, and stress is concentrated on both ends (base and wire) of the semiconductor package that serves as a fulcrum for holding the semiconductor package. The connection of the frame). As a result, there will be a connection between the base and the lead frame. The problem of cracking occurs.

In the semiconductor package described in Patent Document 1, the filling resin is interposed between the base and the lead frame, and the portion of the lead frame that faces the base is formed in a straight line shape. Therefore, once the stress is concentrated on both ends of the package for the semiconductor, the stress is transmitted along the portion of the lead frame that faces the base. Thereby, there is a case where cracks occur along the interface of the lead frame opposite to the base and the resin-filled interface.

The present invention has been made in view of such circumstances, and an object of the invention is to provide a semiconductor package and a semiconductor light-emitting device capable of suppressing cracking in a semiconductor package.

In order to achieve the above object, the present invention employs the following.

(1) The semiconductor package according to the aspect of the invention is a semiconductor package for accommodating a semiconductor element, characterized in that: a pad portion having a mounting surface on which the semiconductor element is mounted; and an electrode portion a connection surface that is arranged in a gap with the pad portion and has a connection surface electrically connected to the semiconductor element, and a state in which the mounting surface and the connection surface are exposed. The pad portion and the electrode portion are fixed to the pad portion, and a pad portion side protruding portion that protrudes toward the electrode portion is formed in the pad portion, and a portion of the pad portion on which the pad portion side protruding portion is formed and a front portion are formed The aforementioned gap between the electrode portions is filled with the aforementioned filling resin.

(2) In the semiconductor package of the aspect of the above aspect (1), the electrode portion may be formed with an electrode portion side protruding portion that protrudes toward the pad portion.

(3) The semiconductor package according to the above aspect (2), wherein the pad portion side protruding portion and the electrode portion side protruding portion are protruded from the pad portion side protruding portion as viewed from a normal direction of the mounting surface. The directions in which the directions are orthogonal are free from each other and are arranged adjacent to each other.

(4) The semiconductor package according to the above aspect (2) or (3), wherein a plurality of the pad portion side protruding portions are formed in the pad portion, and the adjacent 2 faces are viewed from a normal direction of the mounting surface. The electrode portion side protruding portion is disposed between the pad portion side protruding portions.

(5) The semiconductor package according to the above aspect (4), wherein the pad portion may have two pad-side protruding portions having the same length in a direction in which the electrode portion protrudes, and the two pad portions Among the side protruding portions, one of the pad portion side protruding portions is formed at one end portion of a portion of the pad portion facing the electrode portion, and the other pad portion side protruding portion is formed on the pad portion and The other end portion of the portion opposite to the electrode portion.

(6) The semiconductor package according to the above aspect (4) or (5), wherein a length of the plurality of pad-side protruding portions in a direction in which the electrode portions protrude is larger than a direction in which the electrode portion-side protruding portions face the pad The length of the protruding direction is longer.

(7) The semiconductor package according to the above aspect (4), wherein the pad portion may have two pad-side protruding portions different in length from each other in a direction in which the electrode portion protrudes, and the two pad portion sides One of the protruding parts The pad portion side protruding portion is formed at one end portion of a portion of the pad portion facing the electrode portion, and the other pad portion side protruding portion is formed at a portion of the pad portion facing the electrode portion The other end.

(8) The semiconductor package according to any one of the above aspects of the present invention, wherein at least a part of the tip end portion of the pad portion side protruding portion and the electrode portion side protruding portion is at least a part of the mounting surface The normal direction is seen as a curved shape.

(9) The semiconductor package according to any one of the above aspects (1) to (8), wherein the light emitted from the semiconductor element mounted on the mounting surface is directed to the mounting surface around the mounting surface. The reflective surface above the reflection.

(10) The semiconductor package according to the above aspect (9), wherein the mounting surface and the connecting surface are disposed at different heights, and a portion of the mat portion on which the mat portion side protruding portion is formed protrudes to The height of the aforementioned connecting surface.

(11) The semiconductor package according to any one of the above aspects (1) to (10), wherein a surface opposite to the mounting surface of the pad portion may be exposed from the filling resin.

(12) The semiconductor package according to any one of the above aspects (1) to (11), which may be selected from the group consisting of nylon, liquid crystal polymer, enamel resin, and epoxy resin. .

(13) A semiconductor light-emitting device according to any one of claims 1 to 12, wherein the semiconductor light-emitting device according to any one of claims 1 to 12; a semiconductor element mounted on the mounting surface; and a sealing resin that seals the semiconductor element.

According to the present invention, it is possible to provide a semiconductor package and a semiconductor light-emitting device capable of suppressing cracking in a semiconductor package.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments.

In addition, in all of the following drawings, the size, ratio, and the like of each constituent element are appropriately changed in order to facilitate the drawing. In the following description and the drawings, the same or corresponding elements will be denoted by the same reference numerals, and the repeated description will be omitted.

(First embodiment)

FIG. 1 is a schematic view showing a semiconductor light-emitting device 1 according to a first embodiment of the present invention. 1A is a perspective view of a semiconductor light-emitting device 1, FIG. 1B is a plan view of the semiconductor light-emitting device 1, and FIG. 1C is a bottom view of the semiconductor light-emitting device 1.

In addition, in the following description, the XYZ orthogonal coordinate system is set, and the positional relationship of each member is demonstrated with reference to this XYZ orthogonal coordinate system. Further, the predetermined direction in the horizontal plane is set to the X-axis direction, and the direction orthogonal to the X-axis direction is set to the Y-axis direction in the horizontal plane. The direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) is set to the Z-axis direction. In the horizontal direction, the short-side direction of the rectangular parallelepiped semiconductor light-emitting device 1 is set to the X direction, the longitudinal direction of the semiconductor light-emitting device 1 is set to the Y direction, and the normal direction of the mounting surface 11a of the semiconductor element 20 is set to The Z direction is shown.

As shown in FIG. 1A to FIG. 1C, the semiconductor light-emitting device 1 is provided with a semiconductor package 10, a semiconductor element 20, and a sealing resin 30. The semiconductor light-emitting device 1 has a rectangular parallelepiped shape and constitutes an outgoing light to the upper side. For example, the semiconductor light-emitting device 1 is a lamp unit that is applied to a backlight source of a liquid crystal display device, an illumination field, or the like.

Further, the shape of the semiconductor light-emitting device 1 is not limited to a rectangular parallelepiped shape, and various shapes such as an arc (R) or a planar elliptical shape may be applied to the corner portion.

The semiconductor package 10 is for housing the semiconductor element 20. The semiconductor package 10 has a pad portion 11, an electrode portion 12, and a filling resin 13. For example, the semiconductor element 20 is a semiconductor element such as a light-emitting element such as an LED, an illuminance sensor, or an image sensor element such as a CMOS or a CCD.

The pad portion 11 has a mounting surface 11a on which the semiconductor element 20 is mounted. The pad portion 11 is a base on which the semiconductor element 20 is mounted. One end of the connection line 22 connected to the semiconductor element 20 is connected to the mounting surface 11a. For example, the pad portion 11 is made of iron (Fe), tin (Sn), chromium (Cr), zinc (Zn), nickel (Ni), aluminum (Al), silver (Ag), gold (Au), copper (Cu). Or a metal or an alloy containing at least one of the metals.

2A to 2C are schematic views showing a semiconductor package 10 according to the first embodiment of the present invention. 2A is a plan view of the semiconductor package 10, FIG. 2B is a cross-sectional view taken along line A-A of FIG. 2A, and FIG. 2C is a cross-sectional view taken along line B-B of FIG. 2A.

As shown in FIG. 2A, the electrode portion 12 is arranged in a line direction (+Z direction) of the mounting surface 11a, and a gap 40 is formed in the pad portion 11. The electrode portion 12 is disposed on one side (+Y direction side) of the pad portion 11 in the longitudinal direction of the semiconductor package 10 . The electrode portion 12 is a connection surface 12a having electrical connection with the semiconductor element 20. The connection surface 12a is connected to one end of the connection line 21 connected to the semiconductor element 20 (refer to FIG. 1A).

In the filling resin 13, the pad portion 11 and the electrode portion 12 are fixed with the mounting surface 11a and the connecting surface 12a exposed upward. The filling resin 13 is insulated and fixed in a state in which the pad portion 11 and the electrode portion 12 are separated from each other at a predetermined interval so that the pad portion 11 and the electrode portion 12 are not electrically connected.

The filling resin 13 has a rectangular parallelepiped shape, and a long hole is formed in a portion where the mounting surface 11a and the connecting surface 12a are exposed, and the long hole has a long side in the Y direction. For example, the filling resin 13 is formed by ejecting a resin material by an injection machine so as to cover a portion of the mounting surface 11a of the semiconductor element 20 of the pad portion 11 or the connecting surface 12a of the electrode portion 12 with a resin. Thereby, the filling resin 13 is formed as a part of the embedded pad portion 11 and the electrode portion 12.

As a material for forming the filling resin 13, a resin material excellent in heat resistance is used. For example, as a forming material of the filling resin 13, a nylon is used. At least one or more resin materials selected from the group consisting of nylon (polyamide containing aliphatic skeleton), liquid crystal polymer, enamel resin, and epoxy resin.

Further, the shape of the filling resin 13 is not limited to a rectangular parallelepiped shape, and various shapes such as an arc (R) or a planar elliptical shape may be imparted to the corner portion.

The pad portion 11 is formed with a pad portion side protruding portion 111 that protrudes toward the electrode portion 12. On the other hand, the electrode portion 12 is formed with an electrode portion side protruding portion 121 that protrudes toward the pad portion 11.

In the present embodiment, the pad portion 11 is formed with two pad portion side protruding portions 111. When viewed from the normal direction (+Z direction) of the mounting surface 11a, one electrode portion side protruding portion 121 is disposed between the adjacent two pad portion side protruding portions 111. When viewed in the short-side direction (X direction) of the semiconductor light-emitting device 1, the tip end portion of the pad-side projecting portion 111 and the tip end portion of the electrode-side projecting portion 121 are disposed to overlap each other.

On the side opposite to the side of the electrode portion 12 on which the electrode portion side protruding portion 121 is formed, two leg portions 122 extending from the body of the electrode portion 12 in the Y direction are formed. A part of the leg portions 122 penetrates a part of the filling resin 13 and is exposed to the outside. For example, the leg portion 122 is a function of a connection terminal when the semiconductor light-emitting device 1 is mounted on a semiconductor substrate (not shown).

As shown in FIG. 2B and FIG. 2C, the connection surface 11a of the pad portion 11 and the connection surface 12a of the electrode portion 12 are disposed at different heights from each other. In the present embodiment, the mounting surface 11a is disposed at a position lower than the connection surface 12a. The portion of the pad portion 11 on the side where the pad side protrusion portion 111 is formed is a height that protrudes to the connection surface 12a.

The pad portion 11 has a side wall portion 11b surrounding the mounting surface 11a and a horizontal edge portion 11c formed on the outer edge portion of the side wall portion 11b. The side wall portion 11b is formed in a ring shape on the entire circumference of the mounting surface 11a. For example, the surface of the side wall portion 11b is a plating treatment of a metal material such as gold, silver, aluminum, or nickel. Thereby, the surface of the side wall portion 11b has a function as a reflecting surface that reflects the light emitted from the semiconductor element 20 toward the upper side of the mounting surface 11a. The horizontal edge portion 11c is disposed at the same height as the connection surface 12a. The shape of the pad portion 11 is formed in a concave shape by the mounting surface 11a and the side wall portion 11b.

As described above, the portion of the pad portion 11 on which the semiconductor element 20 is mounted is formed in a concave shape.

For example, as a method of forming the pad portion 11 into a concave shape, a method of performing deep drawing on a portion to be the mounting surface 11a of the pad portion 11 can be mentioned.

The surface 11d (hereinafter referred to as the back surface 11d of the pad portion 11) on the opposite side to the mounting surface 11a of the pad portion 11 is exposed from the filling resin 13. The back surface 11d of the pad portion 11 coincides with the surface of the back surface 13a of the filling resin 13.

3 is an enlarged view of a portion on the side where the pad portion side protruding portion 111 of the pad portion 11 of the semiconductor package 10 of the present embodiment is formed.

In FIG. 3, the symbol CL is a center line along the Y direction of the semiconductor package 10. The symbol L is the length of the pad-side protruding portion 111 in the direction in which the electrode portion 12 protrudes (the length parallel to the Y direction in which the pad-side protruding portion 111 protrudes from the pad portion 11 toward the electrode portion 12). In addition, in FIG. 3, only the pad part 11 and the electrode part 12 are shown, for convenience, and illustration of other components of the semiconductor package 10 is abbreviate|omitted.

As shown in Fig. 3, the pad portion 11 is formed by two pad-side protruding portions 111 having the same length L in the direction in which the electrode portions 12 protrude. One of the two pad-side protruding portions 111 is one. The pad side protrusion portion 111 (the pad portion side protrusion portion 111 on the upper side in the drawing) is an end portion (end portion on the −X direction side) formed in a portion where the pad portion 11 faces the electrode portion 12 . The other pad side protrusion portion 111 (the pad portion side protrusion portion 111 on the lower side in the drawing) is the other end portion (the end portion on the +X direction side) of the portion where the pad portion 11 and the electrode portion 12 face each other. .

The electrode portion 12 is formed with one electrode portion side protruding portion 121 that protrudes toward the pad portion 11. The electrode portion side protruding portion 121 is a central portion formed in a portion where the electrode portion 12 and the pad portion 11 face each other. The electrode portion side protruding portion 121 is disposed between the two pad portion side protruding portions 111 at the front end portion. In the present embodiment, the pad portion side protruding portion 111 and the electrode portion side protruding portion 121 are in a direction orthogonal to the protruding direction of the pad portion side protruding portion 111 (X direction) as viewed in the normal direction of the mounting surface 11a. The gaps 40 are vacated from each other and formed adjacent to each other. In other words, the front end portion of the pad portion side protruding portion 111 and the front end portion of the electrode portion side protruding portion 121 which are disposed in two in the X direction overlap each other. In the present embodiment, the connection portion between the pad portion 11 and the electrode portion 12 is line-symmetrical with respect to the center line CL.

4 is an enlarged view of a connection portion between the pad portion 1011 and the electrode portion 1012 of the semiconductor package of the comparative example. In addition, in FIG. 4, only the pad part 1011 and the electrode part 1012 are shown only for convenience, and illustration of the other components of the semiconductor package is abbreviate|omitted.

As shown in FIG. 4, in the comparative example, the pad portion 1011 and the electrode portion The gap 1040 between 1012 is filled with a filling resin (not shown). The portion 1011a of the pad portion 1011 on the side of the electrode portion 1012 and the portion 1012a of the electrode portion 1012 on the side opposite to the pad portion 1011 are formed in a straight line shape in plan view.

However, when a semiconductor element is mounted on a semiconductor package, the pressing force acts on the semiconductor package from the direction in which the semiconductor element is mounted, and the stress is concentrated on both ends of the semiconductor package that serves as a fulcrum for holding the semiconductor package (pad portion 1011 and a connection portion of the electrode portion 1012). As a result, there is a problem that the connection portion between the pad portion 1011 and the electrode portion 1012 is cracked.

For example, in the semiconductor package of the comparative example, the filling resin is interposed between the pad portion 1011 and the electrode portion 1012, and the portion of the pad portion 1011 on the side opposite to the electrode portion 1012 and the electrode portion 1012 The portions 1012a on the opposite sides of the pad portion 1011 are formed in a straight line shape in plan view. Therefore, when the stress concentrates on both end portions of the semiconductor package, the stress is along the portion 1011a of the pad portion 1011 facing the electrode portion 1012 and the portion 1012a of the electrode portion 1012 facing the pad portion 1011. To convey.

Thereby, there is a portion 1011a which is cracked along the side of the pad portion 1011 which faces the electrode portion 1012, a portion where the resin is filled, and a portion of the electrode portion 1012 which faces the pad portion 1011 and the filling resin. The situation that occurs in the interface.

The crack is easily formed along the interface between the pad portion 1011 and the resin filling and the interface between the electrode portion 1012 and the filling resin. Since the crack is from the one end side (-X direction side) of the short side of the filling resin toward the other end side of the short side direction (+X) Since the direction side is formed linearly, as in the case of the semiconductor package of the comparative example, when the interface between the pad portion 1011 and the filling resin and the interface between the electrode portion 1012 and the filling resin are linear, the crack easily follows the filling. The short side direction of the resin is formed.

In the semiconductor package 10 of the present embodiment, when the interface between the pad portion 11 and the filling resin 13 and the interface between the electrode portion 12 and the filling resin 13 are serpentine in the short-side direction (X direction) of the filling resin 13, The crack is not easily formed along the short side direction of the filling resin 13. In the semiconductor package 10 of the present embodiment, the pad portion side protruding portion 111 and the electrode portion side protruding portion 121 are formed adjacent to each other with a gap 40 in the short side direction of the filling resin 13. Therefore, even if a part of the filling resin 13 is cracked and the crack grows in the short side direction of the filling resin 13, the crack portion can be suppressed by the pad portion 11 or the electrode portion 12 which is disposed in the growth direction. In the case of growth, cracks are formed in the entire short-side direction of the filling resin 13 and are suppressed.

As described above, in the semiconductor package 10 of the present embodiment, even when stress is applied to the semiconductor package 10 during mounting of the semiconductor element 20, cracks are less likely to be formed in the semiconductor package 10. Therefore, a semiconductor package 10 having a high yield can be provided.

Further, according to the semiconductor package 10 of the present embodiment, the next general effect can be obtained.

In the semiconductor package 10 of the present embodiment, the two pad portion side protruding portions 111 having the same length L are formed at both end portions of the portion where the pad portion 11 and the electrode portion 12 face each other. Therefore, the pad portion 11 and the electrode can be improved The strength of the connecting portion of the portion 12 is balanced.

Further, the surface of the side wall portion 11b surrounding the mounting surface 11a is plated with a metal material. Therefore, the light obliquely emitted from the semiconductor element 20 can be reflected toward the upper side of the mounting surface 11a.

When the mounting surface is disposed at the same height as the connection surface, the light obliquely emitted from the semiconductor element 20 is reflected toward the upper surface of the mounting surface 11a by the filling resin 13, but when used for a long period of time, the resin 13 is filled. The color is discolored due to deterioration, and there is a possibility that the light extraction efficiency is deteriorated.

On the other hand, in the present embodiment, since the mounting surface 11a is disposed at a position lower than the connection surface 12a, the light obliquely emitted from the semiconductor element 20 is a side wall plated by a metal material. The portion 11b is reflected toward the upper side of the mounting surface 11a. However, since the side wall portion 11b is subjected to a plating treatment, discoloration during long-term use can be suppressed. Therefore, the light emitted from the semiconductor element 20 can be taken out efficiently.

Since the back surface 11d of the pad portion 11 is exposed from the filling resin 13, heat generated in the driving of the semiconductor element 20 is radiated to the outside via the pad portion 11. Therefore, it is possible to suppress the heat generated in the semiconductor element 20 from being enclosed in the filling resin 13. Therefore, the heat generated in the semiconductor element 20 can be efficiently radiated to the outside.

In addition, since at least one or more kinds of resin materials selected from the group consisting of nylon, liquid crystal polymer, enamel resin, and epoxy resin are used as the filling resin 13, a semiconductor package 10 excellent in heat resistance can be provided.

Further, according to the semiconductor light-emitting device 1 of the present embodiment, since the semiconductor package 10 is provided, it is possible to provide a semiconductor package 10 The semiconductor light-emitting device 1 in which the semiconductor package 10 is cracked.

(Second embodiment)

Fig. 5 is a perspective view showing a semiconductor light-emitting device 2 according to a second embodiment of the present invention shown in Fig. 1A. The semiconductor light-emitting device 2 of the present embodiment is different from the semiconductor light-emitting device 1 of the above-described first embodiment in that the semiconductor package 10A is replaced with the semiconductor package 10. The other points are the same as those of the above-described configuration, and the same components as those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 5, the semiconductor light-emitting device 2 is provided with a semiconductor package 10A, a semiconductor element 20, and a sealing resin 30.

The semiconductor package 10A has a pad portion 11A, an electrode portion 12A, and a filling resin 13A.

Fig. 6 is a plan view showing the semiconductor package 10A according to the embodiment of Fig. 2A. In addition, in FIG. 6, the symbol CP is the center point of the planar semiconductor package 10A.

As shown in FIG. 6, the electrode portion 12A is arranged in alignment with the pad portion 11A in the normal direction (+Z direction) of the mounting surface 11Aa. In the longitudinal direction of the semiconductor package 10A, the electrode portion 12A is disposed on each of both sides (the +Y direction side and the -Y direction side) of the pad portion 11A, and two of them are arranged in total. The electrode portion 12 is a connection surface 12Aa having electrical connection with the semiconductor element 20.

Referring back to FIG. 5, the connection surface 12Aa of the electrode portion 12A disposed on the +Y direction side is connected with the connection line 21 connected to the semiconductor element 20. One end. On the other hand, the connection surface 12Aa of the electrode portion 12A disposed on the -Y direction side is connected to one end of the connection line 22 connected to the semiconductor element 20.

In the filling resin 13A, the mounting surface 11Aa and the connecting surface 12Aa are exposed to the upper side, and the pad portion 11A and the electrode portion 12A are fixed.

The pad portion 11A is formed with two pad-side protruding portions 111A and 112A that protrude toward the electrode portion 12. On the other hand, the electrode portion 12A is formed with one electrode portion side protruding portion 121A that protrudes toward the pad portion 11A.

When viewed from the normal direction (+Z direction) of the mounting surface 11Aa, the electrode portion side protruding portion 121A is disposed between the pad portion side protruding portion 111A and the pad portion side protruding portion 112A. The front end portion of the pad portion side protruding portion 111A and the front end portion of the electrode portion side protruding portion 121A are overlapped with each other, and the front end portion of the pad portion side protruding portion 112A is viewed from the short side direction (X direction) of the semiconductor light emitting device 1. The front end portions of the electrode portion side protruding portions 121A overlap each other.

On the side opposite to the side of the electrode portion 12A on which the electrode portion side protruding portion 121A is formed, a leg portion 122A extending from the body of the electrode portion 12A in the Y direction is formed. The front end portion of the pad side protruding portion 112A and a part of the leg portion 122A are partially exposed through the filling resin 13 and exposed to the outside. For example, the pad side protruding portion 112A and the leg portion 122A have a function as a connection terminal when the semiconductor light emitting device 2 is mounted on the semiconductor substrate. In the present embodiment, the connection portion between the pad portion 11A and the electrode portion 12A is point-symmetric with respect to the center point CP.

Fig. 7 is an enlarged view of a portion corresponding to the side on which the pad side protruding portions 111A, 112A of the pad portion 11A of Fig. 3 are formed. In Figure 7, The symbol CL is a center line along the Y direction of the semiconductor package 10A. The symbol L1 is a length in a direction in which the pad portion side protruding portion 111A protrudes toward the electrode portion 12A (a length parallel to the Y direction in which the pad portion side protruding portion 111A protrudes from the pad portion 11A toward the electrode portion 12A). The symbol L2 is a length in a direction in which the pad portion side protruding portion 112A protrudes toward the electrode portion 12A (a length parallel to the Y direction in which the pad portion side protruding portion 112A protrudes from the pad portion 11A toward the electrode portion 12A). In addition, in FIG. 7, only the pad part 11A and the electrode part 12A are shown, and the illustration of the other components of the semiconductor package 10A is abbreviate|omitted.

As shown in FIG. 7, the pad portion 11A is formed by two pad-side protruding portions 111A and 112A having different lengths in the direction in which the electrode portion 12A protrudes. Here, among the two pad-side protruding portions, the length in the direction in which the electrode portion 12A protrudes is relatively short, and the first pad portion-side protruding portion 111A is formed, and the length in the direction in which the electrode portion 12A protrudes is relatively long. It is the 2nd pad side protrusion part 112A.

Referring back to FIG. 6 , in the connection portion on the +Y direction side of the semiconductor package 10A, the first pad portion side protruding portion 111A is formed at one end portion of the portion where the pad portion 11A faces the electrode portion 12A (the -X direction side). End). The second pad side protrusion portion 112A is the other end portion (end portion on the +X direction side) of the portion that is formed between the pad portion 11A and the electrode portion 12A. On the other hand, in the connection portion on the -Y direction side of the semiconductor package 10A, the first pad portion side protruding portion 111A is formed at one end portion of the portion where the pad portion 11A faces the electrode portion 12A (on the +X direction side) Ends). The second pad side protrusion 112A is the other end (-X) of the portion formed between the pad portion 11A and the electrode portion 12A. End of the direction side).

The electrode portion 12A is formed with one electrode portion side protruding portion 121A that protrudes toward the pad portion 11A. The electrode portion side protruding portion 121A is disposed between the first pad portion side protruding portion 111A and the second pad portion side protruding portion 112A. In the present embodiment, the front end portion of the first pad portion side protruding portion 111A and the front end portion of the electrode portion side protruding portion 121A are arranged to overlap each other, and the front end of the second pad portion side protruding portion 112A is arranged in the X direction. The front end portions of the portion and the electrode portion side protruding portion 121A overlap each other. Further, in the present embodiment, the connection portion between the pad portion 11A and the electrode portion 12A is not line-symmetrical with respect to the center line CL.

According to the semiconductor package 10A of the present embodiment, the connection portion between the pad portion 11A and the electrode portion 12A does not become line-symmetric with respect to the center line CL shown in FIG. 7, and forms an asymmetry on the -X direction side and the +X direction side. . Therefore, the connection portion of the pad portion 11A and the electrode portion 12A is symmetric with respect to the center line on the -X direction side and the +X direction side, and the position of the fusion line formed when the filling resin 13 is formed is easily deviated. Center line CL. When the position of the fusion line is formed along the center line CL, the thickness of the filling resin 13 of the semiconductor package 10A is thin, and thus the strength is poor.

However, in the present embodiment, as long as the portion where the fusion line is formed is adjusted in accordance with the asymmetry of the connection portion between the pad portion 11A and the electrode portion 12A, the total joint strength of the connection portion can be increased. For example, in the present embodiment, since the portion in which the fusion line is formed is removed from the center line CL, the thickness of the filling resin 13 of the semiconductor package 10A is increased, so that the strength can be increased.

When the portion in which the fusion line is formed is placed in a plan view and overlapped in the portion where the gap 40 is not formed in the connection portion (the second pad portion side protruding portion 112A), the portion in which the fusion line is formed is disposed. The configuration in which the gap 40 is formed in the connecting portion (the portion where the first pad portion side protruding portion 111A and the electrode portion 12A are connected) is formed in a plan view, and the total joint strength of the connecting portion can be increased.

Further, the second pad side protruding portion 112A penetrates a part of the filling resin 13 and does not have a configuration in which the gap 40 is formed in the middle. In other words, in the short-side direction (X direction) of the semiconductor package 10A, the portion having no gap 40 is formed. Therefore, when stress is concentrated on both end portions of the semiconductor package 10A, it is possible to more reliably suppress the transmission of this stress along the portion of the gap 40.

Therefore, it is possible to provide a semiconductor package 10A capable of suppressing cracking in the semiconductor package 10A.

(Third embodiment)

Fig. 8 is a perspective view showing a semiconductor light-emitting device 3 according to a third embodiment of the present invention shown in Fig. 1A. The semiconductor light-emitting device 3 of the present embodiment is different from the semiconductor light-emitting device 1 of the first embodiment in that the semiconductor package 10B is replaced by the semiconductor package 10. The other points are the same as those of the above-described configuration, and the same components as those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 8, the semiconductor light-emitting device 3 is provided with a semiconductor package 10B, a semiconductor element 20, and a sealing resin 30.

The semiconductor package 10B has a pad portion 11B, an electrode portion 12B, and a filling resin 13B.

Fig. 9 is a plan view showing a semiconductor package 10B according to the embodiment of Fig. 2A.

As shown in FIG. 9, the electrode portion 12B is arranged in alignment with the pad portion 11B in the normal direction (+Z direction) of the mounting surface 11Ba. In the longitudinal direction of the semiconductor package 10B, the electrode portion 12B is disposed on each of both sides (the +Y direction side and the -Y direction side) of the pad portion 11B, and two of them are arranged in total. The electrode portion 12B is a connection surface 12Ba having electrical connection with the semiconductor element 20.

Referring back to FIG. 8, the connection surface 12Ba of the electrode portion 12B disposed on the +Y direction side is connected to one end of the connection line 21 connected to the semiconductor element 20. On the other hand, the connection surface 12Ba of the electrode portion 12B disposed on the -Y direction side is connected to one end of the connection line 22 connected to the semiconductor element 20.

In the filling resin 13B, the mounting surface 11Ba and the connecting surface 12Ba are exposed to the upper side, and the pad portion 11B and the electrode portion 12B are fixed.

The pad portion 11B is formed with two pad-side protruding portions 111B that protrude toward the electrode portion 12B. On the other hand, the electrode portion 12B is formed with one electrode portion side protruding portion 121B that protrudes toward the pad portion 11B. When viewed from the normal direction (+Z direction) of the mounting surface 11Ba, the electrode portion side protruding portion 121B (electrode portion 12B) is disposed between the two pad portion side protruding portions 111B.

A side opposite to the side of the electrode portion 12B on which the electrode portion side protruding portion 121B is formed is formed to extend from the body of the electrode portion 12B in the Y direction. Foot 122B. The front end portion and the leg portion 122B of the pad side protruding portion 111B are partially exposed to the filling resin 13 and exposed to the outside. For example, the leg portion 122B has a function as a connection terminal when the semiconductor light-emitting device 3 is mounted on a semiconductor substrate.

FIG. 10 is an enlarged view showing a portion on the side where the pad side protrusion portion 111B of the pad portion 11B of the semiconductor package 10B of FIG. 3 is formed. In FIG. 10, the symbol CL is a center line along the Y direction of the semiconductor package 10B. The symbol L3 is a length in a direction in which the pad portion side protruding portion 111B protrudes toward the electrode portion 12B (a length parallel to the Y direction in which the pad portion side protruding portion 111B protrudes from the pad portion 11B toward the electrode portion 12B). The symbol L4 is a length in a direction in which the electrode portion side protruding portion 121B protrudes toward the pad portion 11B (a length parallel to the Y direction in which the electrode portion side protruding portion 121B protrudes from the electrode portion 12B toward the pad portion 11B). In addition, in FIG. 10, only the pad portion 11B and the electrode portion 12B are illustrated for convenience, and illustration of other components of the semiconductor package 10B is omitted.

As shown in FIG. 10, the pad portion 11B is formed by two pad-side protruding portions 111B having the same length in the direction in which the electrode portions 12B protrude. Among the two pad side protruding portions 111B, one pad portion side protruding portion 111B (the upper pad portion side protruding portion 111B in the drawing) is one end portion of a portion formed between the pad portion 11B and the electrode portion 12B. (end of the -X direction side). The other pad side protrusion portion 111B (the pad side protrusion portion 111B on the lower side in the drawing) is the other end portion (the end portion on the +X direction side) of the portion formed between the pad portion 11B and the electrode portion 12B. .

The electrode portion 12B is formed with one electric power protruding toward the pad portion 11B. The pole side protruding portion 121B. The electrode portion side protruding portion 121B is a central portion formed in a portion where the electrode portion 12B faces the pad portion 11B. The electrode portion side protruding portion 121B is disposed between the two pad portion side protruding portions 111B as a whole. In the present embodiment, the length L3 of the direction in which the two electrode portion-side protruding portions protrude toward the electrode portion 12B is longer than the length L4 in the direction in which the electrode portion-side protruding portion 121B protrudes toward the pad portion 11B (L3> L4). In the present embodiment, the connection portion between the pad portion 11B and the electrode portion 12B is line-symmetrical with respect to the center line CL.

According to the semiconductor package 10B of the present embodiment, the two pad-side protruding portions 111B penetrate a part of the filling resin 13B, and the gap 40 is not formed in the middle. In other words, in the short-side direction (the both directions in the -X direction and the +X direction) of the semiconductor package 10B, the portion having no gap 40 is formed. Therefore, when stress is concentrated on both end portions of the semiconductor package 10B, it is possible to more reliably suppress the transmission of this stress along the portion of the gap 40.

(Fourth embodiment)

Fig. 11 is a perspective view showing a semiconductor light-emitting device 4 according to a fourth embodiment of the present invention shown in Fig. 1A. The semiconductor light-emitting device 4 of the present embodiment is different from the semiconductor light-emitting device 1 of the first embodiment in that the semiconductor package 10C is replaced with the semiconductor package 10. The other points are the same as those of the above-described configuration, and the same components as those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 11, the semiconductor light-emitting device 4 is configured to have a half The conductor package 10C, the semiconductor element 20, and the sealing resin 30.

The semiconductor package 10C has a pad portion 11C, an electrode portion 12, and a filling resin 13C.

12A to 12C are schematic views showing a semiconductor package 10C according to the embodiment of Figs. 2A to 2C. Fig. 12A is a plan view showing a semiconductor package 10C according to the embodiment of Fig. 2A. Fig. 12B is a cross-sectional view taken along line C-C of Fig. 12A, and Fig. 12C is a cross-sectional view taken along line D-D of Fig. 12A.

As shown in FIGS. 12A to 12C, a reflection surface 11CR is formed around the mounting surface 11Ca of the pad portion 11C. The reflecting surface 11CR reflects the light emitted from the semiconductor element 20 toward the upper side of the mounting surface 11Ca. For example, the reflecting surface 11CR is an inner wall surface of a portion that protrudes obliquely upward from the side wall portion 11Cb of the pad portion 11C. Further, a plating treatment of a metal material such as gold, silver, aluminum or nickel may be performed on the inner wall surface.

According to the semiconductor package 10C of the present embodiment, since the reflection surface 11CR is formed around the mounting surface 11Ca, the light that is emitted from the semiconductor element 20 in the oblique direction can be reflected toward the upper side of the mounting surface 11Ca. Therefore, the light emitted from the semiconductor element 20 can be taken out efficiently.

(First Modification of Semiconductor Package)

Fig. 13A is a plan view showing a first modification of the semiconductor package of the present invention corresponding to Fig. 2A. In addition, in FIG. 13A, the symbol CL1 is a center line along the Y direction of the semiconductor package 10D. The symbol CL2 is a center line along the X direction of the semiconductor package 10D.

As shown in FIG. 13A, the semiconductor package 10D of the present modification includes a pad portion 11D, an electrode portion 12, and a filling resin 13D.

In the semiconductor package 10 of the above-described first embodiment, the electrode portion 12 is disposed on only one side (+Y direction side) of the pad portion 11 in the longitudinal direction of the semiconductor package 10.

In the semiconductor package 10D of the present modification, the electrode portion 12 is disposed on the both sides (the +Y direction side and the -Y direction side) of the pad portion 11D in the longitudinal direction of the semiconductor package 10D. , a total of two configurations. Further, the connection portion between the pad portion 11D and the electrode portion 12 is line-symmetrical with respect to the center line CL1, and the connection portion between the pad portion 11D and the electrode portion 12 is also line-symmetrical with respect to the center line CL2.

In the semiconductor package 10D of the present modification, it is also possible to suppress cracking in the semiconductor package 10D.

(Second Modification of Semiconductor Package)

Fig. 13B is a plan view showing a second modification of the semiconductor package of the present invention corresponding to Fig. 6; In addition, in FIG. 13B, the symbol CP is the center point of the planar semiconductor package 10E. The symbol CL2 is a center line along the X direction of the semiconductor package 10E.

As shown in FIG. 13B, the semiconductor package 10E of the present modification has a pad portion 11E, electrode portions 12A and 12E, and a filling resin 13E.

In the semiconductor package 10A of the second embodiment described above, the connection portion between the pad portion 11A and the electrode portion 12A forms a point pair with respect to the center point CP. Said.

In the semiconductor package 10E of the present modification, the connection portion between the pad portion 11E and the electrode portions 12A and 12E is point-symmetric with respect to the center point CP. However, the connection portion of the pad portion 11E and the electrode portions 12A, 12E is line-symmetrical with respect to the center line CL2.

In the semiconductor package 10E of the present modification, it is also possible to suppress cracking in the semiconductor package 10E.

(Third Modification of Semiconductor Package)

Fig. 13C is a plan view showing a third modification of the semiconductor package of the present invention corresponding to Fig. 6;

As shown in FIG. 13C, the semiconductor package 10F of the present modification has a pad portion 11F, electrode portions 12, 12A, and a filling resin 13F. The semiconductor package 10F is two electrode portions including the electrode portion 12 of the first embodiment and the electrode portion 12A of the second embodiment.

In the semiconductor package 10F of the present modification, it is also possible to suppress cracking in the semiconductor package 10F.

(Fourth Modification of Semiconductor Package)

Fig. 14A is a plan view showing a fourth modification of the semiconductor package of the present invention corresponding to Fig. 6;

As shown in FIG. 14A, the semiconductor package 10G of the present modification has a pad portion 11G, an electrode portion 12A, and a filling resin 13G. The semiconductor package 10G is applied to the semiconductor package of the second embodiment. Face-to-face.

In the present modification, the reflection surface 11GR is formed around the mounting surface 11Ga of the pad portion 11G. The reflecting surface 11GR reflects the light emitted from the semiconductor element 20 toward the upper side of the mounting surface 11Ga.

In the semiconductor package 10G of the present modification, the light emitted from the semiconductor element 20 can be efficiently taken out.

(Fifth Modification of Semiconductor Package)

Fig. 14B is a plan view showing a fifth modification of the semiconductor package of the present invention corresponding to Fig. 9;

As shown in FIG. 14B, the semiconductor package 10H of the present modification includes a pad portion 11H, an electrode portion 12B, and a filling resin 13H. The semiconductor package 10H is a reflective surface to which the semiconductor package of the third embodiment is applied.

In the present modification, the reflection surface 11HR is formed around the mounting surface 11Ha of the pad portion 11H. The reflecting surface 11HR reflects the light emitted from the semiconductor element 20 toward the upper side of the mounting surface 11Ha.

In the semiconductor package 10H of the present modification, the light emitted from the semiconductor element 20 can be efficiently taken out.

(First Modification of Connection Portion of Pad Side Projection Portion and Electrode Portion Side Projection Portion)

15A is a plan view showing a first modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the semiconductor package of the present invention. Fig. 15A is a pad-side projection corresponding to the pad portion of the modification of Fig. 3 An enlarged view of the portion of the side formed. In addition, in FIG. 15A, the symbol CL is a center line along the Y direction of the semiconductor package.

As shown in FIG. 15A, the pad portion 11J is formed with two pad-side protruding portions 111J that protrude toward the electrode portion 12. The electrode portion 12J is formed with one electrode portion side protruding portion 121J that protrudes toward the pad portion 11. The electrode portion side protruding portion 121J is a central portion of a portion formed between the electrode portion 12J and the pad portion 11J. In the present modification, the connection portion between the pad portion 11J and the electrode portion 12J is line-symmetrical with respect to the center line CL.

In the electrode portion 12 of the above-described first embodiment, the tip end portion of the electrode portion side protruding portion 121 is a corner portion having a right angle in a plan view.

In the electrode portion 12J of the present modification, the tip end portion of the electrode portion side protruding portion 121J has a planar curved shape.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package. Further, according to the configuration of the present modification, when stress is concentrated on both end portions of the semiconductor package, the stress is transmitted along the curved distal end portion of the electrode portion side protruding portion 121J, so that stress concentration can be suppressed. Part of the front end. Therefore, it is possible to suppress the occurrence of cracks in a part of the tip end portion of the electrode portion side protruding portion 121J.

(Second modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion)

15B is a plan view showing a second modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the semiconductor package of the present invention. Fig. 15B is an enlarged view of a portion on the side where the pad-side protruding portion of the pad portion of the present modification example of Fig. 3 is formed. In addition, in Fig. 15B, the symbol CL It is a center line along the Y direction of the semiconductor package.

As shown in FIG. 15B, the pad portion 11K is formed with two pad-side protruding portions 111K that protrude toward the electrode portion 12K. The portion of the electrode portion 12K on the side opposite to the pad portion 11K is formed in a straight line shape. In the present modification, the connection portion between the pad portion 11K and the electrode portion 12K is line-symmetrical with respect to the center line CL.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package.

(Third Modification of Connection Portion of Pad Side Projection Portion and Electrode Portion Side Projection Portion)

15C is a plan view showing a third modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the semiconductor package of the present invention. Fig. 15C is an enlarged view of a portion on the side where the pad-side protruding portion of the pad portion of the present modification example of Fig. 3 is formed. In addition, in FIG. 15C, the symbol CL is a center line along the Y direction of the semiconductor package.

As shown in FIG. 15C, the pad portion 11L is formed with two pad-side protruding portions 111L that protrude toward the electrode portion 12L. The electrode portion 12L is formed with two electrode portion side protruding portions 121L that protrude toward the pad portion 11L. The two pad side protrusions 111L and the two electrode side protrusions 121L are opposed to each other. In the present modification, the connection portion between the pad portion 11L and the electrode portion 12L is line-symmetrical with respect to the center line CL.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package.

(Fourth modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion)

FIG. 16 is a plan view showing a fourth modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the semiconductor package of the present invention. Fig. 16A is an enlarged view of a portion on the side where the pad-side protruding portion of the pad portion of the present modification example of Fig. 3 is formed. In addition, in FIG. 16A, the symbol CL is a center line along the Y direction of the semiconductor package.

As shown in FIG. 16A, the pad portion 11M is formed with one pad-side protruding portion 111M that protrudes toward the electrode portion 12M. The pad side protruding portion 111M is a central portion of a portion formed between the pad portion 11M and the electrode portion 12M. The portion of the electrode portion 12M on the side opposite to the pad portion 11M is formed in a straight line shape. In the present modification, the connection portion between the pad portion 11M and the electrode portion 12M is line-symmetrical with respect to the center line CL.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package.

(Fifth Modification of Connection Portion of Pad Side Projection Portion and Electrode Portion Side Projection Portion)

Fig. 16B is a plan view showing a fifth modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the present invention. Fig. 16B is an enlarged view of a portion on the side where the pad-side protruding portion of the pad portion of the present modification example of Fig. 3 is formed.

As shown in FIG. 16B, the pad portion 11N is formed with one pad-side protruding portion 111N that protrudes toward the electrode portion 12N. The pad side protrusion portion 111N is an end portion on the −X direction side of the portion where the pad portion 11N and the electrode portion 12N face each other. The electrode portion 12N is formed with a protrusion 1 toward the pad portion 11N. The electrode portion side protruding portion 121N. The electrode portion side protruding portion 121N is an end portion formed on the +X direction side of a portion where the electrode portion 12N and the pad portion 11N face each other. In the present modification, the pad portion side protruding portion 111N and the electrode portion side protruding portion 121N are formed adjacent to each other with a gap 40 in the short side direction (X direction) of the filling resin.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package.

(Sixth Modification of Connection Portion of Pad Side Projection Portion and Electrode Portion Side Projection Portion)

Fig. 16C is a plan view showing a sixth modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the present invention. Fig. 16C is an enlarged view of a portion on the side where the pad-side protruding portion of the pad portion of the present modification example of Fig. 3 is formed.

As shown in FIG. 16C, the portion of the pad portion 11P that faces the electrode portion 12P has a curved shape that is convex toward the electrode portion 12P. The portion of the electrode portion 12P on the side opposite to the pad portion 11P has a curved shape that is concave toward the pad portion 11P. In the present modification, the portion of the pad portion 11P that faces the electrode portion 12P and the portion of the electrode portion 12P that faces the pad portion 11P are in the short-side direction (X direction) of the filling resin. The gap 40 is vacated and formed adjacently.

In the configuration of the present modification, it is also possible to suppress cracking in the semiconductor package.

Although the preferred embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited to the examples. In the above example The shape, the combination, and the like of the respective constituent members shown in the above are examples, and various modifications can be made according to the design requirements and the like without departing from the scope of the invention, and can be used in combination as appropriate.

1,2,3,4‧‧‧Semiconductor lighting device

10,10A,10B,10C,10D,10E,10F,10G,10H‧‧‧Semiconductor package

11,11A,11B,11C,11D,11E,11F,11G,11H,11J,11K,11L,11M,11N,11P‧‧‧mat

11a, 11Aa, 11Ba, 11Ca, 11Ga, 11Ha‧‧‧ mounting surface

11d, 11Cd‧‧‧ faces opposite to the mounting surface

11CR, 11GR, 11HR‧‧‧reflecting surface

12,12A,12B,12J,12K,12L,12M,12N,12P‧‧‧Electrode

12a, 12Aa, 12Ba‧‧‧ connection surface

13,13A,13B,13C,13D,13E,13F,13G,13H‧‧‧filling resin

20‧‧‧Semiconductor components

30‧‧‧ Sealing resin

40‧‧‧ gap

111, 111A, 111B, 111C, 111D, 111E, 111F, 111G, 111H, 111J, 111K, 111L, 111M, 111N, 111P‧‧ ‧ pad side projection

121, 121A, 121B, 121C, 121D, 121E, 121F, 121G, 121H, 121J, 121K, 121L, 121M, 121N, 121P‧‧‧ electrode side protrusion

L, L1, L2, L3‧‧‧ Length of the direction in which the pad side protrusion protrudes toward the electrode portion

L4‧‧‧ Length of the direction in which the electrode portion side protrusion protrudes toward the pad portion

Fig. 1A is a schematic view showing a semiconductor light-emitting device according to a first embodiment of the present invention.

Fig. 1B is a schematic view showing a semiconductor light-emitting device of the same embodiment.

Fig. 1C is a schematic view showing a semiconductor light-emitting device of the same embodiment.

Fig. 2A is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 2B is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 2C is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 3 is an enlarged view of a portion on the side of the pad portion side protruding portion in which the pad portion is formed in the same embodiment.

4 is an enlarged view showing a portion on the side of the pad portion side protruding portion in which the pad portion is formed in the comparative example.

Fig. 5 is a perspective view showing a semiconductor light emitting device according to a second embodiment of the present invention.

Fig. 6 is a plan view showing a package for a semiconductor of the same embodiment.

Fig. 7 is an enlarged view of a portion on the side of the pad portion side protruding portion in which the pad portion is formed in the same embodiment.

8 is a view showing a semiconductor light emitting device according to a third embodiment of the present invention; Stereogram.

Fig. 9 is a plan view showing a package for a semiconductor of the same embodiment.

Fig. 10 is an enlarged view of a portion on the side of the pad portion side protruding portion in which the pad portion is formed in the same embodiment.

FIG. 11 is a perspective view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.

Fig. 12A is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 12B is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 12C is a schematic view showing a package for a semiconductor of the same embodiment.

Fig. 13A is a plan view showing a modification of the semiconductor package of the present invention.

Fig. 13B is a plan view showing a modification of the semiconductor package of the present invention.

Fig. 13C is a plan view showing a modification of the semiconductor package of the present invention.

Fig. 14A is a plan view showing a modification of the semiconductor package of the same embodiment.

Fig. 14B is a plan view showing a modification of the semiconductor package of the embodiment.

Fig. 15A is a plan view showing a modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the present invention.

15B is a plan view showing a modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the present invention.

15C is a plan view showing a modification of the connection portion between the pad portion side protruding portion and the electrode portion side protruding portion of the present invention.

Fig. 16A is a plan view showing a modification of the connecting portion of the same embodiment.

Fig. 16B is a plan view showing a modification of the connecting portion of the same embodiment.

Fig. 16C is a plan view showing a modification of the connecting portion of the same embodiment.

1‧‧‧Semiconductor light-emitting device

10‧‧‧Semiconductor package

11‧‧‧Mats

11a‧‧‧Jacketing surface

12‧‧‧Electrode

12a‧‧‧ Connection surface

13‧‧‧ Filling resin

20‧‧‧Semiconductor components

21‧‧‧Connecting line

22‧‧‧Connecting line

30‧‧‧ Sealing resin

40‧‧‧ gap

111‧‧‧The pad side projection

121‧‧‧Electrode side protrusion

122‧‧‧ feet

Claims (13)

A package for a semiconductor package for housing a semiconductor element, characterized in that: a pad portion having a mounting surface on which the semiconductor element is mounted; and an electrode portion viewed from a normal direction of the mounting surface a connection surface electrically connected to the semiconductor element, and a connection surface electrically connected to the semiconductor element, and a filling resin that fixes the pad portion and the aforementioned state in a state where the mounting surface and the connection surface are exposed In the electrode portion, a pad portion projecting portion that protrudes toward the electrode portion is formed in the pad portion, and the gap between the portion of the pad portion on which the pad portion side protruding portion is formed and the electrode portion is filled with the gap The resin is filled. The semiconductor package according to the first aspect of the invention, wherein the electrode portion is formed with an electrode portion side protruding portion that protrudes toward the pad portion. The semiconductor package according to the second aspect of the invention, wherein the pad portion side protruding portion and the electrode portion side protruding portion are protruded from the pad portion side protruding portion as viewed from a normal direction of the mounting surface. The orthogonal directions are vacant with each other and are arranged adjacent to each other. The semiconductor package according to the second aspect of the invention, wherein the plurality of the pad portion side protruding portions are formed in the pad portion, and protruded from the adjacent two pad portions as viewed from a normal direction of the mounting surface The electrode portion side protruding portion is disposed between the portions. For example, the semiconductor package of claim 4, wherein The pad portion is formed with two pad portion side protruding portions having the same length in the direction in which the electrode portions protrude, and one of the two pad portion side protruding portions is formed. One end portion of the portion where the pad portion faces the electrode portion, and the other pad portion side protruding portion is formed at the other end portion of the portion where the pad portion faces the electrode portion. The semiconductor package according to the fifth aspect of the invention, wherein the length of the plurality of pad portion-side protruding portions in a direction in which the electrode portion protrudes is longer than a length of the electrode portion-side protruding portion in a direction in which the pad portion protrudes Longer. The semiconductor package according to the fourth aspect of the invention, wherein the pad portion has two pad-side protruding portions different in length from each other in a direction in which the electrode portion protrudes, and the two pad portion-side protruding portions One of the pad portion side protruding portions is formed at one end portion of a portion of the pad portion facing the electrode portion, and the other pad portion side protruding portion is formed on the pad portion and the electrode portion. The other end of the opposite part. The semiconductor package according to any one of the second aspect of the present invention, wherein at least a part of the tip end portion of the pad portion side protruding portion and the electrode portion side protruding portion is formed by the mounting surface The normal direction of the curve is the shape of the curve. The semiconductor package according to any one of the first to seventh aspects of the present invention, wherein the light emitted from the semiconductor element mounted on the mounting surface is provided around the mounting surface. The reflective surface reflected above the surface. The semiconductor package according to claim 9, wherein the mounting surface and the connecting surface are disposed at different heights, and a portion of the mat portion on which the mat portion side protruding portion is formed protrudes from the connection The height of the face. The semiconductor package according to any one of the first to seventh aspects of the present invention, wherein the surface opposite to the mounting surface of the pad portion is exposed from the filling resin. The semiconductor package according to any one of the first to seventh aspects, wherein the filling resin is at least one selected from the group consisting of nylon, liquid crystal polymer, enamel resin, and epoxy resin. the above. A semiconductor light-emitting device according to any one of claims 1 to 12, wherein the semiconductor package is mounted on the mounting surface, and a sealing resin that seals the semiconductor element.