KR20130072152A - Package for semiconductor and semiconductor light-emitting apparatus - Google Patents

Abstract

PURPOSE: A semiconductor package and a semiconductor light emitting device are provided to prevent the generation of cracks in the semiconductor package. CONSTITUTION: A semiconductor package (10) includes a port part (11), an electrode part (12), and a filling resin (13). The port part has a mounting surface (11a) for a semiconductor device (20). A port protrusion part (111) in the port part is protruded towards the electrode part. The electrode part has a contact surface (12a) electrically connected to the semiconductor device. A filling resin fixes the port part and the electrode part while the mounting surface and the contact surface are exposed to the filling resin.

Description

PACKAGE FOR SEMICONDUCTOR AND SEMICONDUCTOR LIGHT-EMITTING APPARATUS}

The present invention relates to a semiconductor package and a semiconductor light emitting device.

Background Art Conventionally, semiconductor packages for accommodating semiconductor elements such as light emitting elements such as LEDs, illuminance sensors, and image sensor elements such as CMOS and CCDs are known.

For example, the package for semiconductors of patent document 1 is comprised by the base in which a semiconductor element is mounted, the lead frame electrically connected with a semiconductor element, and resin which integrally fixes a base and a lead frame.

Japanese Laid-Open Patent Publication 2002-252373

By the way, when mounting a semiconductor element in a semiconductor package, when mounting a semiconductor package to a semiconductor substrate, or cutting the lead frame of a semiconductor package, a stress is applied to a part of semiconductor package. For example, when mounting a semiconductor element in a semiconductor package, pressing force acts from the direction in which a semiconductor element is mounted with respect to a semiconductor package, and both ends of the semiconductor package which become a support point holding a semiconductor package are shown. ), Stress is concentrated on the connection between the base and the lead frame. As a result, there arises a problem that a crack occurs in the connection portion between the base and the lead frame.

In the package for semiconductors of patent document 1, filling resin is interposed between a base and a lead frame, and the part which opposes the base of a lead frame is linear in planar view. For this reason, when stress is concentrated at both ends of the package for a semiconductor, the stress is transmitted along a portion facing the base of the lead frame. Thereby, a crack may arise along the interface of the part and the filling resin which oppose the base of the said lead frame.

This invention is made | formed in view of such a situation, Comprising: It aims at providing the semiconductor package and semiconductor light emitting device which can suppress a crack generate | occur | producing in a semiconductor package.

In order to achieve the above object, the present invention employs the following.

(1) A semiconductor package according to an aspect of the present invention is a semiconductor package for accommodating a semiconductor element, the port portion having a mounting surface on which the semiconductor element is mounted, and the port as viewed from the normal direction of the mounting surface. An electrode portion having a connection surface electrically connected to the semiconductor element and arranged side by side with a portion and a gap; and a filling resin for fixing the port portion and the electrode portion in a state where the mounting surface and the connection surface are exposed; And a port portion protruding portion protruding toward the electrode portion is formed in the port portion, and the gap between the portion on the side where the port portion protruding portion is formed on the port portion and the electrode portion is filled with the filling resin. have.

(2) In the semiconductor package according to the aspect (1) above, the electrode portion may have an electrode portion protruding portion projecting toward the port portion.

(3) The semiconductor package according to the aspect (2) described above, in the direction normal to the mounting surface, the port portion protrusion and the electrode portion protrusion are mutually perpendicular in the direction perpendicular to the protrusion direction of the port portion protrusion. The gap may be disposed adjacent to each other.

(4) In the semiconductor package according to the aspect (2) or (3), a plurality of the port portion side protrusions are formed in the port portion, and the two ports are adjacent to each other in the normal direction of the mounting surface. The electrode portion side protrusion may be disposed between the side protrusions.

(5) In the semiconductor package according to the aspect (4), the port portion is provided with two port portion side protrusions equal in length to each other in the direction projecting toward the electrode portion, and the two port portion side protrusions are provided. Among the port portion side protrusions, one of the port portion side protrusions is formed at one end portion of the portion where the port portion opposes the electrode portion, and the other port portion side protrusion portion is formed at the other end portion of the portion where the port portion opposes the electrode portion. You may be.

(6) In the semiconductor package according to the aspect (4) or (5), the length of the direction in which the plurality of port portion side protrusions protrude toward the electrode portion is the direction in which the electrode portion side protrusions protrude toward the port portion. It may be longer than the length of.

(7) In the package for a semiconductor according to the aspect (4), the port portion is provided with two port portion side protrusions having different lengths in a direction projecting toward the electrode portion, and the two port portion side protrusions. Among the port portion side protrusions, one of the port portion side protrusions is formed at one end portion of the portion where the port portion opposes the electrode portion, and the other port portion side protrusion portion is formed at the other end portion of the portion where the port portion opposes the electrode portion. You may be.

(8) In the semiconductor package according to any one of the above (2) to (7), at least a portion of at least one of the tip portions of the port portion side protrusion and the electrode portion side protrusion is viewed in the normal direction of the mounting surface. It may be curved.

(9) The semiconductor package according to any one of the above items (1) to (8) includes light emitted from the semiconductor element mounted on the mounting surface around the mounting surface. The reflecting surface which reflects toward may be formed.

(10) In the semiconductor package according to the aspect (9), the mounting surface and the connection surface are disposed at different heights from each other.

The part of the side in which the said port part side protrusion part was formed may protrude up to the height of the said connection surface.

(11) In the package for semiconductors which concerns on any one of said (1)-(10), the surface on the opposite side to the said mounting surface of the said port part may be exposed from the said filling resin.

(12) The package for semiconductors in any one of said (1)-(11) may be at least 1 sort (s) or more selected from the group which the said filler resin becomes from a nylon, a liquid crystal polymer, a silicone resin, and an epoxy resin.

(13) A semiconductor light emitting device according to another aspect of the present invention includes a semiconductor package according to any one of (1) to (12), a semiconductor element mounted on the mounting surface, and the semiconductor element. It includes sealing resin.

According to the present invention, it is possible to provide a semiconductor package and a semiconductor light emitting device which can suppress the occurrence of cracks in the semiconductor package.

1: A is a schematic diagram which shows the semiconductor light-emitting device of 1st Embodiment of this invention.
1B is a schematic diagram illustrating a semiconductor light emitting device of the same embodiment.
1C is a schematic diagram illustrating a semiconductor light emitting device of the same embodiment.
FIG. 2A is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
FIG. 2B is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
FIG. 2C is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
3 is an enlarged view of a portion of the side in which the port portion side protrusion of the port portion is formed in the embodiment.
It is an enlarged view of the part of the side in which the port part side protrusion part of the port part of the comparative example was formed.
5 is a perspective view showing a semiconductor light emitting device of a second embodiment of the present invention.
FIG. 6 is a plan view showing a package for a semiconductor in the embodiment. FIG.
FIG. 7 is an enlarged view of a portion at the side where the port portion protruding portion of the port portion is formed in the embodiment. FIG.
8 is a perspective view illustrating a semiconductor light emitting device of a third embodiment of the present invention.
9 is a plan view illustrating a package for a semiconductor in the embodiment.
FIG. 10 is an enlarged view of a portion on the side where the port portion side protrusion of the port portion is formed in the embodiment. FIG.
11 is a perspective view showing a semiconductor light emitting device of a fourth embodiment of the present invention.
FIG. 12A is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
FIG. 12B is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
FIG. 12C is a schematic diagram illustrating a semiconductor package in the embodiment. FIG.
It is a top view which shows the modification of the semiconductor package of this invention.
It is a top view which shows the modification of the semiconductor package of this invention.
13C is a plan view illustrating a modification of the semiconductor package of the present invention.
14A is a plan view showing a modification of the package for a semiconductor in the embodiment.
14B is a plan view illustrating a modification of the semiconductor package in the embodiment.
It is a top view which shows the modification of the connection part of the port part side protrusion part and the electrode part side protrusion part of this invention.
It is a top view which shows the modification of the connection part of the port part side protrusion part and the electrode part side protrusion part of this invention.
It is a top view which shows the modification of the connection part of the port part side protrusion part and the electrode part side protrusion part of this invention.
FIG. 16A is a plan view showing a modification of the connecting portion in the embodiment. FIG.
FIG. 16B is a plan view illustrating a modification of the connecting portion in the embodiment. FIG.
16C is a plan view illustrating a modification of the connecting portion in the same embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, although embodiment of this invention is described referring drawings, this invention is not limited to the following embodiment.

In addition, in all the following drawings, in order to make drawing clear, a dimension, a ratio, etc. of each component were changed suitably. In addition, in the following description and drawings, the same code | symbol is attached | subjected to the same or corresponding element, and the overlapping description is abbreviate | omitted.

(First Embodiment)

FIG. 1: is a schematic diagram which shows the semiconductor light-emitting device 1 of 1st Embodiment of this invention. FIG. 1A is a perspective view of the semiconductor light emitting device 1, FIG. 1B is a plan view of the semiconductor light emitting device 1, and FIG. 1C is a bottom view of the semiconductor light emitting device 1.

In addition, in the following description, the positional relationship of each member is demonstrated, referring to this XYZ rectangular coordinate system by setting an XYZ rectangular coordinate system. The direction orthogonal to the X-axis direction in the horizontal plane in the X-axis direction, and the direction orthogonal to each of the Y-axis direction, the X-axis direction, and the Y-axis direction (ie, the vertical direction) in the horizontal plane is the Z-axis direction. In the figure, the width direction of the rectangular parallelepiped semiconductor light-emitting device 1 is in the horizontal direction in the X direction, the longitudinal direction of the semiconductor light-emitting device 1 in the Y direction, and the normal direction of the mounting surface 11a of the semiconductor element 20. It shows in the Z direction.

As shown to FIG. 1A-FIG. 1C, the semiconductor light emitting apparatus 1 is comprised including the semiconductor package 10, the semiconductor element 20, and the sealing resin 30. As shown in FIG. The semiconductor light emitting device 1 has a rectangular parallelepiped shape and is configured to emit light upward. For example, the semiconductor light emitting device 1 is applied to light units such as a backlight light source and an illumination field of a liquid crystal display device.

In addition, the shape of the semiconductor light-emitting device 1 is not limited to a rectangular parallelepiped shape, Various shapes, such as R-processing a corner part or making it the elliptical shape by planar view, can be employ | adopted.

The package 10 for semiconductors is for accommodating the semiconductor element 20. The package 10 for semiconductors is comprised with the port part 11, the electrode part 12, and the filling resin 13, and is comprised. For example, as the semiconductor element 20, various semiconductor elements such as light emitting elements such as LEDs, illuminance sensors, and image sensor elements such as CMOS and CCDs are used.

The port portion 11 has a mounting surface 11a on which the semiconductor element 20 is mounted. The port portion 11 serves as a base on which the semiconductor element 20 is mounted. One end of the wire 22 connected to the semiconductor element 20 is connected to the mounting surface 11a. For example, the port portion 11 includes iron (Fe), tin (Sn), chromium (Cr), zinc (Zn), nickel (Ni), aluminum (Al), silver (Ag), gold (Au) , Metals such as copper (Cu), or an alloy containing at least one of these metals.

FIG. 2: A is a schematic diagram which shows the semiconductor package 10 of 1st Embodiment of this invention. FIG. 2A is a plan view of the package 10 for semiconductors, FIG. 2B is a sectional view along the A-A line of FIG. 2A, and FIG. 2C is a sectional view along the B-B line of FIG. 2A.

As shown to FIG. 2A, the electrode part 12 is arrange | positioned side by side with the port part 11 and the clearance gap 40 seen from the normal line direction (+ Z direction) of the mounting surface 11a. The electrode part 12 is arrange | positioned at one side (+ Y direction side) of the port part 11 in the longitudinal direction of the package 10 for semiconductors. The electrode part 12 has a connection surface 12a which electrically connects with the semiconductor element 20. One end of the wire 21 connected to the semiconductor element 20 is connected to the connection surface 12a (see FIG. 1A).

The filling resin 13 fixes the port part 11 and the electrode part 12 in the state which exposed the mounting surface 11a and the connection surface 12a upward. The filling resin 13 is insulated and fixed in the state which separated the port part 11 and the electrode part 12 by a predetermined space so that the port part 11 and the electrode part 12 may not conduct.

The filling resin 13 is a rectangular parallelepiped shape, and the elongate hole which has a part long in a Y direction is formed in the part which exposes the mounting surface 11a and the connection surface 12a. For example, the filling resin 13 has a resin in which a portion other than the mounting surface 11a of the semiconductor element 20 of the port portion 11 and the connection surface 12a of the electrode portion 12 is removed by an injection molding machine. The resin material is injected into the mold provided to cover. Thereby, the filling resin 13 is formed so that a part of the port part 11 and the electrode part 12 may be embedded.

As a forming material of the filling resin 13, the resin material excellent in heat resistance is used. For example, at least one resin material selected from the group consisting of nylon (polyamide containing an aliphatic skeleton), liquid crystal polymer, silicone resin, and epoxy resin is used as a material for forming the filling resin 13.

In addition, the shape of the filling resin 13 is not limited to a rectangular parallelepiped shape, Various shapes, such as R-processing a corner part or making it the elliptical shape by planar view, can be employ | adopted.

In the port part 11, the port part side protrusion part 111 which protrudes toward the electrode part 12 is formed. On the other hand, in the electrode part 12, the electrode part side protrusion part 121 which protrudes toward the port part 11 is formed.

In the present embodiment, two port part side protrusions 111 are formed in the port part 11. As seen from the normal direction (+ Z direction) of the mounting surface 11a, one electrode part side protrusion 121 is arranged between two adjacent port part side protrusions 111. As seen from the width direction (X direction) of the semiconductor light-emitting device 1, the tip part of the two port part side protrusion part 111 and the tip part of the electrode part side protrusion part 121 are arrange | positioned so that they may overlap with each other.

On the side opposite to the side where the electrode part side protrusion 121 of the electrode part 12 is formed, two leg parts 122 extending from the main body of the electrode part 12 in the Y direction are formed. A part of these leg parts 122 penetrates a part of filling resin 13, and is exposed to the outside. For example, the leg portion 122 functions as a connection terminal when the semiconductor light emitting device 1 is mounted on a semiconductor substrate (not shown).

As shown to FIG. 2B and FIG. 2C, the mounting surface 11a of the port part 11 and the connection surface 12a of the electrode part 12 are arrange | positioned at mutually different heights. In this embodiment, the mounting surface 11a is arrange | positioned at the position lower than the connection surface 12a. The part of the side in which the port part side protrusion part 111 was formed of the port part 11 protrudes to the height of the connection surface 12a.

The port part 11 has the side wall part 11b surrounding the periphery of the mounting surface 11a, and the horizontal edge part 11c formed in the outer edge part of the side wall part 11b. The side wall part 11b is formed in ring shape at the perimeter edge of the mounting surface 11a. For example, the plating process by metal materials, such as gold, silver, aluminum, and nickel, is given to the surface of the side wall part 11b. Thereby, the surface of the side wall part 11b functions as a reflecting surface which reflects the light emitted from the semiconductor element 20 toward the mounting surface 11a. The horizontal edge part 11c is arrange | positioned at the same height as the connection surface 12a. The shape of the port part 11 is concave by the mounting surface 11a and the side wall part 11b.

As described above, the port 11 is provided with a recessed portion in which the semiconductor element 20 is mounted.

For example, as a method of making the port part 11 into a concave shape, the method of drawing-processing to the part used as the mounting surface 11a of the port part 11 is mentioned.

The surface 11d (hereinafter, referred to as the back surface 11d of the port portion 11) on the side opposite to the mounting surface 11a of the port portion 11 is exposed from the filling resin 13. The rear surface 11d of the port portion 11 is exposed in the same manner as the rear surface 13a of the filling resin 13.

3 is an enlarged view of a portion on the side where the port portion side protrusion 111 of the port portion 11 is formed in the semiconductor package 10 of the present embodiment. In FIG. 3, code | symbol CL is a centerline along the Y direction of the package 10 for semiconductors. Reference numeral L denotes a length in the direction in which the port portion protruding portion 111 protrudes toward the electrode portion 12 (parallel to the Y direction in which the port portion protruding portion 111 protrudes from the port portion 11 toward the electrode portion 12). One length). In addition, in FIG. 3, only the port part 11 and the electrode part 12 are shown for convenience, and illustration of the other component of the semiconductor package 10 is abbreviate | omitted.

As shown in FIG. 3, the port part 11 is provided with two port part side protrusions 111 having the same length L in the direction protruding toward the electrode part 12. One port part side protrusion part 111 (port part side protrusion part 111 of the upper side in drawing) of the two port part side protrusion parts 111 is the one end part of the part in which the port part 11 opposes the electrode part 12. As shown in FIG. It is formed in (the edge part at the side of -X direction). The other port part side protrusion part 111 (lower port part side protrusion part 111 in the figure) is formed in the other end part (end part of + X direction side) of the part in which the port part 11 opposes the electrode part 12. As shown in FIG. It is.

The electrode part 12 is provided with one electrode part side protrusion 121 protruding toward the port part 11. The electrode part side protrusion part 121 is formed in the center part of the part in which the electrode part 12 opposes the port part 11. As for the electrode part side protrusion part 121, the distal end part is arrange | positioned between two port part side protrusion parts 111. As shown in FIG. In the present embodiment, viewed from the normal direction of the mounting surface 11a, the port part side protrusion 111 and the electrode part side protrusion 121 are in a direction (X direction) orthogonal to the protrusion direction of the port part side protrusion 111. They are formed adjacent to each other with a gap 40 therebetween. In other words, as seen from the X-direction, the tip ends of the two port part side protrusions 111 and the tip ends of the electrode part side protrusions 121 are arranged to overlap each other. In this embodiment, the connection part of the port part 11 and the electrode part 12 is linearly symmetrical with respect to the center line CL.

4 is an enlarged view of a connection portion of the port portion 1011 and the electrode portion 1012 in the semiconductor package of the comparative example. 4, only the port part 1011 and the electrode part 1012 are shown for convenience, and illustration of the other component of the semiconductor package is abbreviate | omitted.

As shown in FIG. 4, in the comparative example, the gap 1040 between the port portion 1011 and the electrode portion 1012 is filled with a filling resin not shown. The part 1011a of the side which opposes the electrode part 1012 of the port part 1011, and the part 1012a of the side which opposes the port part 1011 of the electrode part 1012 are respectively linear in plan view. It is.

By the way, when mounting a semiconductor element in a semiconductor package, both ends (port part 1011) of a semiconductor package which becomes a point which a pressing force acts from the direction in which a semiconductor element is mounted with respect to a semiconductor package, and is a point which hold | maintains a semiconductor package is carried out. ) And the connection portion of the electrode portion 1012). As a result, there arises a problem that a crack occurs in the connection portion between the port portion 1011 and the electrode portion 1012.

For example, in the package for a semiconductor of a comparative example, filling resin is interposed in the clearance gap 1040 between the port part 1011 and the electrode part 1012, and opposes the electrode part 1012 of the port part 1011. The side portion 1011a and the portion 1012a on the side facing the port portion 1011 of the electrode portion 1012 are respectively linear in plan view. Therefore, when stress is concentrated in the both ends of the package for a semiconductor, it opposes the part 1011a of the side which opposes the electrode part 1012 of the port part 1011, and the port part 1011 of the electrode part 1012. Along the portion 1012a of the side to which stress is transmitted.

As a result, the interface of the portion 1011a on the side facing the electrode portion 1012 of the port portion 1011 and the filling resin and the portion 1012a on the side facing the port portion 1011 of the electrode portion 1012. A crack may generate | occur | produce along the interface of the resin) and filler resin.

The crack is likely to be formed along the interface between the port portion 1011 and the filling resin and the interface between the electrode portion 1012 and the filling resin. Since the crack is formed linearly from the width direction end side (-X direction side) of the filling resin toward the other end side in the width direction (+ X direction side), the port portion 1011 and the filling resin are similar to the semiconductor package of the comparative example. If both the interface and the interface of the electrode portion 1012 and the filling resin are formed in a straight line, the cracks are easily formed along the width direction of the filling resin.

On the other hand, like the package 10 for semiconductors of this embodiment, the interface of the port part 11 and the filling resin 13, and the interface of the electrode part 12 and the filling resin 13 are the If it is formed meandering with respect to the width direction (X direction), it will become difficult to form a crack along the width direction of the filling resin 13. In addition, in the package 10 for semiconductors of this embodiment, the port part side protrusion part 111 and the electrode part side protrusion part 121 are formed adjacent each other with the clearance gap 40 along the width direction of the filling resin 13, respectively. . For this reason, even if a crack generate | occur | produces in a part of filling resin 13, and a crack is going to grow in the width direction of filling resin 13, the highly rigid port part 11 and electrode part 12 arrange | positioned in the growth direction are ), The growth of cracks is suppressed, and the formation of cracks in the entire width direction of the filling resin 13 is suppressed.

Thus, according to the semiconductor package 10 of this embodiment, even if stress is applied to the semiconductor package 10 at the time of mounting of the semiconductor element 20, a crack is hard to form in the semiconductor package 10 well. Therefore, the package 10 for semiconductors with high yield is provided.

Moreover, according to the package 10 for semiconductors of this embodiment, the following effects are also acquired.

In the package 10 for semiconductors of this embodiment, two port part side protrusions 111 having the same length L are formed at both ends of a portion where the port part 11 faces the electrode part 12. Formed. For this reason, the intensity balance of the connection part of the port part 11 and the electrode part 12 can be raised.

Moreover, the plating process by a metal material is given to the surface of the side wall part 11b surrounding the mounting surface 11a. For this reason, the light emitted obliquely from the semiconductor element 20 can be reflected upward above the mounting surface 11a.

If the mounting surface is arranged at the same height as the connection surface, the light emitted obliquely from the semiconductor element 20 is reflected by the filling resin 13 toward the mounting surface 11a, and is used for a long time. There is a possibility that the filling resin 13 is discolored due to deterioration, and the extraction efficiency of light deteriorates.

On the other hand, in this embodiment, since the mounting surface 11a is arrange | positioned in the position lower than the connection surface 12a, the plating process by the metal material is given to the light emitted obliquely from the semiconductor element 20. Although the side wall part 11b is reflected toward the upper side of the mounting surface 11a, since the side wall part 11b is plated, the discoloration at the time of using it for a long time can be suppressed. Therefore, the light emitted from the semiconductor element 20 can be taken out efficiently.

Since the back surface 11d of the port portion 11 is exposed from the filling resin 13, heat generated during the driving of the semiconductor element 20 is radiated to the outside through the port portion 11. For this reason, it can suppress that the heat which generate | occur | produces in the semiconductor element 20 is trapped in the filling resin 13. Therefore, heat generated in the semiconductor element 20 can be efficiently radiated to the outside.

Moreover, since at least 1 type or more types of resin material selected from the group which consists of nylon, a liquid crystal polymer, a silicone resin, and an epoxy resin are used as the filling resin 13, the semiconductor package 10 excellent in heat resistance can be provided.

In addition, according to the semiconductor light emitting device 1 of the present embodiment, since the semiconductor package 10 is provided, the semiconductor light emitting device 1 which can suppress the occurrence of cracks in the semiconductor package 10 is provided. Can provide.

(Second Embodiment)

FIG. 5: is a perspective view which shows the semiconductor light-emitting device 2 of 2nd Embodiment of this invention corresponding to FIG. 1A. The semiconductor light emitting device 2 of the present embodiment differs from the semiconductor light emitting device 1 according to the above-described first embodiment in that the semiconductor package 10A is provided instead of the semiconductor package 10. Since the other points are the same as the structure mentioned above, the same code | symbol is attached | subjected to the same element as FIG. 1A, and detailed description is abbreviate | omitted.

As shown in FIG. 5, the semiconductor light emitting device 2 includes a semiconductor package 10A, a semiconductor element 20, and a sealing resin 30.

The semiconductor package 10A includes a port portion 11A, an electrode portion 12A, and a filling resin 13A.

FIG. 6: is a top view which shows the package 10A for semiconductors of this embodiment corresponding to FIG. 2A. In addition, in FIG. 6, code | symbol CP is the center point of the package 10A for semiconductors seen from the plane.

As shown in FIG. 6, the electrode portions 12A are arranged side by side with the port portion 11A and the gap 40 as viewed in the normal direction (+ Z direction) of the mounting surface 11Aa. 12 A of electrode parts are arrange | positioned at the both sides (+ Y direction side, -Y direction side) of the port part 11A in the longitudinal direction of 10 A of packages for semiconductors, and are arrange | positioned in total two. The electrode part 12 has a connection surface 12Aa which electrically connects with the semiconductor element 20.

Returning to FIG. 5, one end of the wire 21 connected to the semiconductor element 20 is connected to the connection surface 12Aa of the electrode portion 12A disposed on the + Y direction side. On the other hand, one end of the wire 22 connected to the semiconductor element 20 is connected to the connection surface 12Aa of the electrode portion 12A arranged on the -Y direction side.

The filling resin 13A fixes the port portion 11A and the electrode portion 12A in a state where the mounting surface 11Aa and the connecting surface 12Aa are exposed upward.

In the port portion 11A, two port portion side protrusions 111A and 112A which protrude toward the electrode portion 12 are formed. On the other hand, one electrode part side protrusion 121A which protrudes toward the port part 11A is formed in 12 A of electrode parts.

As seen from the normal direction (+ Z direction) of the mounting surface 11Aa, the electrode side side protrusion 121A is disposed between the port side side protrusion 111A and the port side side protrusion 112A. In the width direction (X direction) of the semiconductor light emitting device 1, the tip of the port-side protrusion 112A and the electrode-side protrusion are overlapped so that the tip of the port-side protrusion 111A and the tip of the electrode-side protrusion 121A overlap each other. The distal ends of 121A are arranged to overlap each other.

A leg portion 122A extending in the Y direction from the main body of the electrode portion 12A is formed on the side opposite to the side on which the electrode portion side protrusion 121A of the electrode portion 12A is formed. A part of the tip part of the port part side protrusion part 112A and the leg part 122A penetrates a part of the filling resin 13, and is exposed to the exterior. For example, the port part side protrusion 112A and the leg part 122A function as a connection terminal at the time of mounting the semiconductor light-emitting device 2 on a semiconductor substrate. In this embodiment, the connection part of the port part 11A and the electrode part 12A is point symmetrical with respect to the center point CP.

FIG. 7: is an enlarged view of the part of the side in which the port part side protrusion part 111A, 112A of the port part 11A was formed corresponding to FIG. In FIG. 7, reference numeral CL is a centerline along the Y direction of the semiconductor package 10A. Reference numeral L1 denotes a length in a direction in which the port portion protruding portion 111A protrudes toward the electrode portion 12A (parallel to the Y direction in which the port portion protruding portion 111A protrudes from the port portion 11A toward the electrode portion 12A). One length). Reference numeral L2 denotes a length in a direction in which the port portion protruding portion 112A protrudes toward the electrode portion 12A (parallel to the Y direction in which the port portion protruding portion 112A protrudes from the port portion 11A toward the electrode portion 12A). One length). In addition, in FIG. 7, only the port part 11A and the electrode part 12A are shown for convenience, and illustration of the other component of the semiconductor package 10A is abbreviate | omitted.

As shown in FIG. 7, the port part 11A is provided with two port part side protrusion parts 111A, 112A different from each other in the length of the direction which protrudes toward the electrode part 12A. Here, the direction which protrudes toward the electrode part 12A relatively is made into the 1st port part side protrusion part 111A of the two port part side protrusion parts whose direction of the direction which protrudes toward the electrode part 12A relatively is short. The longer side of S is set as the 2nd port part side protrusion part 112A.

Returning to FIG. 6, in the connecting portion on the + Y direction side of the semiconductor package 10A, the first port portion side protrusion 111A has one end portion of the portion where the port portion 11A opposes the electrode portion 12A. It is formed in (the edge part at the side of -X direction). 112 A of 2nd port part side protrusions are formed in the other end part (end part of + X direction side) of the part which port part 11A opposes electrode part 12A. On the other hand, in the connection part on the side of the -Y direction of the semiconductor package 10A, the first port part side protrusion 111A has one end portion (+ X direction) of the portion where the port part 11A faces the electrode part 12A. Side end). 112 A of 2nd port part side protrusions are formed in the other end part (edge part of a -X direction side) of the part which port part 11A opposes electrode part 12A.

In the electrode portion 12A, one electrode portion side protrusion 121A protruding toward the port portion 11A is formed. The tip portion of the electrode portion side protrusion 121A is disposed between the first port portion side protrusion 111A and the second port portion side protrusion 112A. In the present embodiment, the distal end portion of the first port portion protruding portion 111A and the distal end portion of the electrode portion protruding portion 121A overlap each other, and the distal end portion of the second port portion protruding portion 112A and the electrode portion side. It is arrange | positioned so that the front-end | tip part of 121 A of protrusions may mutually overlap. In addition, in this embodiment, the connection part of the port part 11A and the electrode part 12A is not line symmetric with respect to the center line CL.

According to the package 10A for semiconductors of the present embodiment, the connecting portion of the port portion 11A and the electrode portion 12A is not line-symmetrical with respect to the center line CL shown in FIG. 7, but the -X direction side and the + X direction It is asymmetrical from the side. For this reason, compared with the structure in which the connection part of the port part 11A and the electrode part 12A is symmetrical with respect to a center line at the -X direction side and + X direction side, it is formed when injection-molding the filling resin 13 is formed. The position of the weld line tends to be shifted from the center line CL. When the position of the weld line is formed along the center line CL, since the thickness of the filling resin 13 of the semiconductor package 10A is thin, the strength is inferior.

However, in this embodiment, if the part in which a weld line is formed is adjusted based on the asymmetry of the connection part of the port part 11A and the electrode part 12A, joining strength can be enlarged as the whole connection part. For example, in this embodiment, since the part in which the weld line is formed is shifted from the center line CL, since the thickness of the filling resin 13 of the semiconductor package 10A becomes thick, intensity | strength can be enlarged.

Further, when the portion where the weld line is formed is arranged so as to overlap in plan view with the portion (second port portion side protrusion 112A) where the gap 40 is not formed in the connecting portion, the portion where the weld line is formed is described above. Compared with the structure arrange | positioned so that it may overlap in plan view with the part (connection part of the 1st port part side protrusion part 111A and electrode part 12A) in which the clearance gap 40 was formed in a connection part, the joining strength may be made large as the whole said connection part. Can be.

Moreover, 112 A of 2nd port part side protrusions penetrate a part of filling resin 13, and it is not the structure by which the clearance gap 40 is formed in the middle. In other words, as seen from the width direction (X direction) of the semiconductor package 10A, the gap 40 is not formed. For this reason, when stress is concentrated in the both ends of the package 10A for semiconductors, it can suppress that this stress is transmitted along the clearance gap 40 part.

Therefore, the semiconductor package 10A which can suppress that a crack generate | occur | produces in the semiconductor package 10A can be provided.

(Third Embodiment)

FIG. 8: is a perspective view which shows the semiconductor light-emitting device 3 of 3rd Embodiment of this invention corresponding to FIG. 1A. The semiconductor light emitting device 3 of the present embodiment differs from the semiconductor light emitting device 1 according to the above-described first embodiment in that the semiconductor package 10B is provided instead of the semiconductor package 10. Since the other points are the same as the structure mentioned above, the same code | symbol is attached | subjected to the same element as FIG. 1A, and detailed description is abbreviate | omitted.

As shown in FIG. 8, the semiconductor light emitting device 3 includes a semiconductor package 10B, a semiconductor element 20, and a sealing resin 30.

The package 10B for semiconductor is comprised including the port part 11B, the electrode part 12B, and the filling resin 13B.

9 is a plan view of the semiconductor package 10B of the present embodiment corresponding to FIG. 2A.

As shown in FIG. 9, the electrode part 12B is arrange | positioned side by side with the port part 11B and the clearance gap 40 from the normal line direction (+ Z direction) of the mounting surface 11Ba. The electrode parts 12B are arrange | positioned one by one on both sides (+ Y direction side, -Y direction side) of the port part 11B in the longitudinal direction of the package 10B for semiconductors, and are arrange | positioned in total two. The electrode portion 12B has a connection surface 12Ba that is electrically connected to the semiconductor element 20.

8, one end of the wire 21 connected to the semiconductor element 20 is connected to the connection surface 12Ba of the electrode portion 12B arranged on the + Y direction side. On the other hand, one end of the wire 22 connected to the semiconductor element 20 is connected to the connection surface 12Ba of the electrode portion 12B disposed on the -Y direction side.

The filling resin 13B fixes the port part 11B and the electrode part 12B in the state which exposed the mounting surface 11Ba and the connection surface 12Ba upward.

In the port part 11B, two port part side protrusions 111B which protrude toward the electrode part 12B are formed. On the other hand, one electrode part side protrusion part 121B which protrudes toward the port part 11B is formed in the electrode part 12B. As seen from the normal direction (+ Z direction) of the mounting surface 11Ba, an electrode part side protrusion 121B (electrode part 12B) is disposed between two port part side protrusions 111B.

The leg part 122B extended in the Y direction from the main part of the electrode part 12B is formed in the opposite side to the side in which the electrode part side protrusion part 121B of the electrode part 12B was formed. The tip part and leg part 122B of the port part side protrusion part 111B penetrate a part of filler resin 13, and are exposed to the exterior. For example, the leg portion 122B functions as a connection terminal when the semiconductor light emitting device 3 is mounted on a semiconductor substrate.

FIG. 10: is an enlarged view of the part of the side in which the port part side protrusion part 111B of the port part 11B in the package 10B for semiconductors corresponding to FIG. 3 was formed. In FIG. 10, code | symbol CL is a centerline along the Y direction of the semiconductor package 10B. Reference numeral L3 denotes a length in the direction in which the port portion protruding portion 111B protrudes toward the electrode portion 12B (parallel to the Y direction in which the port portion protruding portion 111B protrudes from the port portion 11B toward the electrode portion 12B). One length). Reference numeral L4 denotes a length in a direction in which the electrode portion side protrusion 121B protrudes toward the port portion 11B (parallel to the Y direction in which the electrode portion side protrusion 121B protrudes from the electrode portion 12B toward the port portion 11B). One length). In addition, in FIG. 10, only the port part 11B and the electrode part 12B are shown for convenience, and illustration of the other component of the semiconductor package 10B is abbreviate | omitted.

As shown in FIG. 10, the port part 11B is provided with two port part side protrusion part 111B equal in length to the direction which protrudes toward the electrode part 12B. Of the two port part side protrusions 111B, one port part side protrusion part 111B (the upper port part side protrusion part 111B in the figure) has one end part of the part in which the port part 11B opposes the electrode part 12B. It is formed in (the edge part at the side of -X direction). The other port part side protrusion part 111B (the lower port part side protrusion part 111B in the figure) is formed in the other end part (end part of the + X direction side) of the part which the port part 11B opposes the electrode part 12B. It is.

The electrode part 12B is provided with one electrode part side protrusion 121B which protrudes toward the port part 11B. The electrode part side protrusion part 121B is formed in the center part of the part in which the electrode part 12B opposes the port part 11B. The electrode part side protrusion part 121B is arrange | positioned in whole between two port part side protrusion parts 111B. In this embodiment, length L3 of the direction which protrudes toward the electrode part 12B of two port part side protrusions is length L4 of the direction which protrudes toward the port part 11B of the electrode part side protrusion 121B. Longer than (L3> L4). In this embodiment, the connection part of the port part 11B and the electrode part 12B becomes line symmetry with respect to the center line CL.

According to the package 10B for semiconductors of this embodiment, the two port part side protrusion part 111B has penetrated a part of filling resin 13B, and the clearance gap 40 is formed in the middle. In other words, in the width direction (bidirectional in the -X direction and the + X direction) of the semiconductor package 10B, the gap 40 is not formed. For this reason, when stress is concentrated in the both ends of the package 10B for semiconductors, it can suppress more reliably that this stress is transmitted along the clearance gap 40 part.

(Fourth Embodiment)

FIG. 11: is a perspective view which shows the semiconductor light-emitting device 4 of 4th Embodiment of this invention corresponding to FIG. 1A. The semiconductor light emitting device 4 of the present embodiment differs from the semiconductor light emitting device 1 according to the above-described first embodiment in that the semiconductor package 10C is provided instead of the semiconductor package 10. Since the other points are the same as the structure mentioned above, the same code | symbol is attached | subjected to the same element as FIG. 1A, and detailed description is abbreviate | omitted.

As shown in FIG. 11, the semiconductor light emitting device 4 includes a semiconductor package 10C, a semiconductor element 20, and a sealing resin 30.

The package 10C for semiconductor is comprised with the port part 11C, the electrode part 12, and the filling resin 13C.

12A to 12C are schematic views showing the package 10C for a semiconductor of the present embodiment, corresponding to FIGS. 2A to 2C. FIG. 12A is a plan view of the semiconductor package 10C of the present embodiment corresponding to FIG. 2A. FIG. 12B is a cross-sectional view along the C-C line of FIG. 12C, and FIG. 12C is a cross-sectional view along the D-D line of FIG. 12A.

12A to 12C, the reflecting surface 11CR is formed around the mounting surface 11Ca of the port portion 11C. The reflecting surface 11CR reflects the light emitted from the semiconductor element 20 toward the mounting surface 11Ca. For example, the reflecting surface 11CR is an inner wall surface of a portion protruding obliquely upward from the side wall portion 11Cb of the port portion 11C. In addition, the inner wall surface may be plated with a metal material such as gold, silver, aluminum or nickel.

According to the semiconductor package 10C of this embodiment, since the reflecting surface 11CR is formed around the mounting surface 11Ca, the light emitted from the semiconductor element 20 in an oblique direction is placed on the mounting surface 11Ca. It can be reflected upward. Therefore, the light emitted from the semiconductor element 20 can be taken out efficiently.

(1st modification of the package for semiconductors)

FIG. 13A is a plan view illustrating a first modification of the semiconductor package of the present invention corresponding to FIG. 2A. FIG. In addition, in FIG. 13A, code | symbol CL1 is the centerline along the Y direction of the package 10D for semiconductors. Reference numeral CL2 is a centerline along the X direction of the semiconductor package 10D.

As shown to FIG. 13A, the semiconductor package 10D of this modification is comprised with the port part 11D, the electrode part 12, and the filling resin 13D.

In the semiconductor package 10 according to the first embodiment described above, the electrode portion 12 is disposed on one side (+ Y direction side) of the port portion 11 in the longitudinal direction of the semiconductor package 10. Only one was placed.

In contrast, in the semiconductor package 10D according to the present modification, the electrode portions 12 are opposite to the port portions 11D in the longitudinal direction of the semiconductor package 10D (the + Y direction side and the -Y direction). Side) are arranged one by one, and a total of two are arranged. In addition, the connection portion of the port portion 11D and the electrode portion 12 is linearly symmetric with respect to the center line CL1, and the connection portion of the port portion 11D and the electrode portion 12 is also line symmetrical with respect to the center line CL2. It is.

In the semiconductor package 10D of the present modification, the occurrence of cracks in the semiconductor package 10D can be suppressed.

(2nd modification of the package for semiconductors)

FIG. 13B is a plan view illustrating a second modification of the semiconductor package of the present invention corresponding to FIG. 6. In addition, in FIG. 13B, code | symbol CP is the center point of the package 10E for semiconductor viewed from the plane. Reference numeral CL2 is a centerline along the X direction of the semiconductor package 10E.

As shown to FIG. 13B, the semiconductor package 10E of this modification is comprised with the port part 11E, the electrode parts 12A and 12E, and the filling resin 13E.

In the package 10A for semiconductors according to the second embodiment described above, the connecting portion of the port portion 11A and the electrode portion 12A is point symmetrical with respect to the center point CP.

In contrast, in the semiconductor package 10E according to the present modification, the connecting portion of the port portion 11E and the electrode portions 12A, 12E is not point symmetrical with respect to the center point CP. However, the connecting portion of the port portion 11E and the electrode portions 12A, 12E is linearly symmetric with respect to the center line CL2.

Also in the semiconductor package 10E of this modification, it can suppress that a crack generate | occur | produces in the semiconductor package 10E.

(Third modification of the package for semiconductor)

FIG. 13C is a plan view illustrating a third modification example of the semiconductor package of the present invention corresponding to FIG. 6.

As shown to FIG. 13C, the semiconductor package 10F which concerns on this modification is comprised with the port part 11F, the electrode parts 12 and 12A, and the filling resin 13F. The package 10F for semiconductor is provided with two electrode parts, the electrode part 12 which concerns on 1st Embodiment, and the electrode part 12A which concerns on 2nd Embodiment.

Also in the semiconductor package 10F of this modification, it can suppress that a crack generate | occur | produces in the semiconductor package 10F.

(4th modification of the package for semiconductors)

14A is a plan view showing a fourth modification of the package for semiconductor of the present invention, corresponding to FIG. 6.

As shown to FIG. 14A, the semiconductor package 10G which concerns on this modification is comprised with the port part 11G, the electrode part 12A, and the filling resin 13G. The semiconductor package 10G applies a reflecting surface to the semiconductor package according to the second embodiment.

In this modification, the reflecting surface 11GR is formed around the mounting surface 11Ga of the port portion 11G. The reflecting surface 11GR reflects the light emitted from the semiconductor element 20 toward the mounting surface 11Ga.

Also in the semiconductor package 10G of this modification, the light emitted from the semiconductor element 20 can be taken out efficiently.

(Fifth modification of the package for semiconductor)

FIG. 14B is a plan view illustrating a fifth modification of the semiconductor package of the present invention corresponding to FIG. 9.

As shown in FIG. 14B, the semiconductor package 10H according to the present modification includes the port portion 11H, the electrode portion 12B, and the filling resin 13H. The semiconductor package 10H applies a reflecting surface to the semiconductor package according to the third embodiment.

In the present modification, a reflecting surface 11HR is formed around the mounting surface 11Ha of the port portion 11H. The reflecting surface 11HR reflects light emitted from the semiconductor element 20 toward the mounting surface 11Ha.

Also in the semiconductor package 10H of this modification, the light emitted from the semiconductor element 20 can be taken out efficiently.

(1st modification of the connection part of the port part side protrusion part and electrode part side protrusion part)

Fig. 15A is a plan view showing a first modification of the connecting portion of the port portion side protrusion and the electrode portion side protrusion in the semiconductor package of the present invention. FIG. 15A is an enlarged view of a portion on the side where the port portion protruding portion of the port portion of the present modified example corresponding to FIG. 3 is formed. FIG. In addition, in FIG. 15A, code | symbol CL is a centerline along the Y direction of the package for semiconductors.

As shown in FIG. 15A, two port part side protrusions 111J protruding toward the electrode part 12 are formed in the port part 11J. In the electrode portion 12J, one electrode portion side protrusion 121J protruding toward the port portion 11 is formed. The electrode part side protrusion 121J is formed in the center part of the part in which the electrode part 12J opposes the port part 11J. In this modification, the connection part of the port part 11J and the electrode part 12J is line symmetrical with respect to the center line CL.

In the electrode part 12 which concerns on 1st Embodiment mentioned above, the front-end | tip part of the electrode part side protrusion part 121 had the corner part of a right angle at planar view.

On the other hand, in the electrode part 12J which concerns on this modification, the front-end | tip part of the electrode part side protrusion part 121J is curved in plan view.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors. In addition, according to the structure of this modification, when stress is concentrated in the both ends of the package for semiconductors, since this stress is transmitted along the curved tip of the electrode part side protrusion 121J, stress concentrates in a part of this tip. Can be suppressed. Therefore, it can suppress that a crack generate | occur | produces in a part of tip part of electrode part side protrusion part 121J.

(2nd modification of the connection part of the port part side protrusion part and electrode part side protrusion part)

15B is a plan view illustrating a second modification of the connection portion of the port portion side protrusion and the electrode portion side protrusion in the semiconductor package of the present invention. FIG. 15B is an enlarged view of a portion on the side of the port portion protruding portion of the port portion of the present modified example corresponding to FIG. 3. In addition, in FIG. 15B, code | symbol CL is a centerline along the Y direction of the package for semiconductors.

As shown in FIG. 15B, two port part side protrusions 111K protruding toward the electrode part 12K are formed in the port part 11K. The part of the electrode part 12K on the side opposite to the port part 11K is linear in plan view. In this modification, the connection part of the port part 11K and the electrode part 12K is line symmetrical with respect to the center line CL.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors.

(Third modification of the connecting portion of the port portion side protrusion and the electrode portion side protrusion)

Fig. 15C is a plan view showing a third modification example of the connection portion of the port portion side protrusion and the electrode portion side protrusion in the semiconductor package of the present invention. FIG. 15C is an enlarged view of a portion of the side in which the port portion protruding portion of the port portion of the present modified example corresponding to FIG. 3 is formed. FIG. 15C, code | symbol CL is a centerline along the Y direction of the package for semiconductors.

As shown in FIG. 15C, two port part side protrusions 111L protruding toward the electrode part 12L are formed in the port part 11L. In the electrode portion 12L, two electrode portion side protrusions 121L protruding toward the port portion 11L are formed. Two port part side protrusion parts 111L and two electrode part side protrusion parts 121L oppose each other. In this modification, the connection part of the port part 11L and the electrode part 12L becomes line symmetry with respect to the center line CL.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors.

(Fourth modification of the connection part of the port part side protrusion part and the electrode part side protrusion part)

It is a top view which shows the 4th modified example of the connection part of the port part side protrusion part and the electrode part side protrusion part in the semiconductor package of this invention. FIG. 16A is an enlarged view of a portion on the side where the port portion side protrusion of the port portion of the present modification corresponds to FIG. 3. In addition, in FIG. 16A, code | symbol CL is a centerline along the Y direction of the package for semiconductors.

As shown to FIG. 16A, one port part side protrusion part 111M which protrudes toward the electrode part 12M is formed in 11M of port parts. The port part side protrusion 111M is formed in the center part of the part in which the port part 11M opposes the electrode part 12M. The part of the electrode part 12M which opposes the port part 11M is linear in plan view. In this modification, the connection part of the port part 11M and the electrode part 12M becomes line symmetry with respect to the center line CL.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors.

(Fifth modification of the connecting portion of the port portion protrusion and the electrode portion side protrusion)

It is a top view which shows the 5th modified example of the connection part of the port part side protrusion part and the electrode part side protrusion part of this invention. FIG. 16B is an enlarged view of a portion on the side where the port portion protruding portion of the port portion of the present modified example corresponding to FIG. 3 is formed. FIG.

As shown in FIG. 16B, one port part side protrusion 111N which protrudes toward the electrode part 12N is formed in the port part 11N. The port portion side protrusion 111N is formed at an end portion on the −X direction side of a portion where the port portion 11N opposes the electrode portion 12N. In the electrode portion 12N, one electrode portion side protrusion 121N protruding toward the port portion 11N is formed. The electrode part side protrusion part 121N is formed in the edge part of the + X direction side of the part which the electrode part 12N opposes the port part 11N. In this modification, the port part side protrusion part 111N and the electrode part side protrusion part 121N are formed adjacent to each other along the clearance gap 40 along the width direction (X direction) of filling resin.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors.

(6th modification of the connection part of the port part side protrusion part and electrode part side protrusion part)

It is a top view which shows the 6th modification of the connection part of the port part side protrusion part and the electrode part side protrusion part of this invention. FIG. 16C is an enlarged view of a portion on the side of the port portion protruding portion of the port portion of the present modified example corresponding to FIG. 3.

As shown to FIG. 16C, the part of the side of the port part 11P which faces the electrode part 12P becomes a curved shape which becomes convex toward the electrode part 12P. The part of the side of the electrode portion 12P that faces the port portion 11P is curved to be concave toward the port portion 11P. In this modification, the part of the side which opposes the electrode part 12P of the port part 11P, and the part of the side which opposes the port part 11P of the electrode part 12P are the width direction (X direction) of a filling resin. ) Are formed adjacent to each other with a gap 40 therebetween.

Also in the structure of this modification, it can suppress that a crack generate | occur | produces in a package for semiconductors.

As mentioned above, although the preferred embodiment which concerns on this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to this example. All the shapes, the combinations, and the like of the respective constituent members shown in the above-described examples are examples, and various modifications are possible based on design requirements and the like without departing from the spirit of the present invention and can be used in combination as appropriate.

1, 2, 3, 4: semiconductor light emitting device,
10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H: package for semiconductor,
11, 11A, 11B, 11C, 11D, 11E, 11F, 11G, 11H, 11J, 11K, 11L, 11M, 11N, 11P: port part,
Mounting surface: 11a, 11Aa, 11Ba, 11Ca, 11Ga, 11Ha,
11d, 11Cd: surface opposite to mounting surface,
11CR, 11GR, 11HR: reflective surface,
12, 12A, 12B, 12J, 12K, 12L, 12M, 12N, 12P: electrode part,
12a, 12Aa, 12Ba: connection surface,
Filling resin: 13, 13A, 13B, 13C, 13D, 13E, 13F, 13G, 13H,
20: semiconductor device,
30: bag resin,
40: gap,
111, 111A, 111B, 111C, 111D, 111E, 111F, 111G, 111H, 111J, 111K, 111L, 111M, 111N, 111P: port side projections,
121, 121A, 121B, 121C, 121D, 121E, 121F, 121G, 121H, 121J, 121K, 121L, 121M, 121N, 121P: protrusion on the electrode side,
L, L1, L2, L3: lengths in the direction of protruding toward the electrode portion of the protruding portion of the port portion side,
L4: Length in the direction which protrudes toward the port part of the electrode part side protrusion part.

Claims (13)

A package for a semiconductor for accommodating a semiconductor element,
A port portion having a mounting surface on which the semiconductor element is mounted;
An electrode portion arranged side by side with a gap in the normal direction of the mounting surface and having a connection surface electrically connected to the semiconductor element;
Filling resin which fixes the said port part and the said electrode part in the state which exposed the said mounting surface and the said connection surface,
The port portion has a port portion protruding portion protruding toward the electrode portion,
A package for a semiconductor, wherein the gap between the portion of the port portion on which the port portion side protrusion is formed and the electrode portion is filled with the filling resin. The method of claim 1,
The electrode part is provided with the electrode part side protrusion which protrudes toward the said port part, The package for semiconductors. 3. The method of claim 2,
The semiconductor package according to the normal direction of the mounting surface, wherein the port portion protruding portion and the electrode portion protruding portion are disposed adjacent to each other with the gap in a direction orthogonal to the protruding direction of the port portion protruding portion. The method according to claim 2 or 3,
The port portion is provided with a plurality of the port portion side protrusions,
The electrode part side protrusion part is arrange | positioned between two said port part side protrusion parts which adjoin looking at the normal line direction of the said mounting surface. The method of claim 4, wherein
The port portion is provided with two port portion side protrusions equal in length to each other in a direction projecting toward the electrode portion.
The said port part side protrusion part is formed in the one end part of the part in which the said port part opposes the said electrode part among the said two port part side protrusion parts, and the said port part side protrusion part is the part in which the said port part opposes the said electrode part The package for a semiconductor formed in the other end of the package. The method according to claim 4 or 5,
The length of the direction which protrudes toward the said electrode part of the said some port part side protrusion part is longer than the length of the direction which protrudes toward the said port part of the said electrode part side protrusion part. The method of claim 4, wherein
The port portion is provided with two port portion side protrusions different in length from each other in a direction projecting toward the electrode portion,
The said port part side protrusion part is formed in the one end part of the part in which the said port part opposes the said electrode part among the said two port part side protrusion parts, and the said port part side protrusion part is the part in which the said port part opposes the said electrode part The package for a semiconductor formed in the other end of the package. 8. The method according to any one of claims 2 to 7,
At least a part of at least one tip portion of the port portion side protrusion and the electrode portion side protrusion is curved in the normal direction of the mounting surface. The method according to any one of claims 1 to 8,
A package for a semiconductor, wherein a reflection surface for reflecting light emitted from the semiconductor element mounted on the mounting surface to the upper side of the mounting surface is formed around the mounting surface. The method of claim 9,
The mounting surface and the connection surface are arranged at different heights from each other,
The part of the side in which the said port part side protrusion part was formed protrudes to the height of the said connection surface, The package for semiconductors. 11. The method according to any one of claims 1 to 10,
The semiconductor package whose surface opposite to the said mounting surface of the said port part is exposed from the said filling resin. 12. The method according to any one of claims 1 to 11,
The package for semiconductors whose said filling resin is at least 1 sort (s) chosen from the group which consists of a nylon, a liquid crystal polymer, a silicone resin, and an epoxy resin. The package for semiconductors in any one of Claims 1-12;
A semiconductor element mounted on the mounting surface;
A semiconductor light emitting device comprising a sealing resin for sealing the semiconductor element.

Images