JP2020031168A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor light-emitting device capable of suppressing direct visual recognition of light from a semiconductor light-emitting element caused by damage to a cover.SOLUTION: A semiconductor light-emitting device A1 includes a semiconductor light emitting element 4, a support 1 having an opening 27 through which light from the semiconductor light-emitting element 4 passes, and including a base 2 and a conductive portion 3 disposed on the base 2, and a cover 5 that closes the opening 27 when viewed in the z direction, and the cover 5 includes a first layer 51 that transmits light from the semiconductor light emitting element 4, a second layer 52 that diffuses light from the semiconductor light emitting element 4, and a third layer 53 that is made of a conductive material, and in which the conduction state changes according to the deformation state of the first layer 51.SELECTED DRAWING: Figure 6

Description

  The present disclosure relates to a semiconductor light emitting device.

  2. Description of the Related Art A semiconductor light emitting device including a semiconductor light emitting element as a light source has been widely proposed. Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes a semiconductor laser element, which is an example of a semiconductor light emitting element, a substrate on which the semiconductor light emitting element is mounted, a case surrounding the semiconductor light emitting element, and a light-transmitting cover for closing the case. And

JP-A-2013-123378

  It is not preferable that the light from the semiconductor light emitting element is directly visually recognized by the naked eye. In the case where the cover has a diffusion function or the like, damage to the cover or the like may lead to direct visual recognition of light from the semiconductor light emitting device.

  The present disclosure has been conceived under the circumstances described above, and it is an object of the present disclosure to provide a semiconductor light emitting device capable of suppressing direct viewing of light from a semiconductor light emitting element caused by damage to a cover. Make it an issue.

  A semiconductor light-emitting device provided by the present disclosure includes a semiconductor light-emitting element, a substrate and a conductive portion disposed on the substrate, a support having an opening through which light from the semiconductor light-emitting element passes, A cover that closes the opening when viewed in a first direction, wherein the cover is a first layer that transmits light from the semiconductor light emitting element, and diffuses light from the semiconductor light emitting element. A second layer; and a third layer made of a conductive material and having a conductive state that changes according to a deformation state of the first layer.

  ADVANTAGE OF THE INVENTION According to this indication, it can suppress that the light from the semiconductor light emitting element resulting from damage of a cover is directly visually recognized.

  Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. 1 is a plan view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 1 is a main part plan view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. 1 is a bottom view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 5 is a sectional view taken along line VV in FIG. 2. FIG. 6 is a sectional view taken along the line VI-VI in FIG. 2. FIG. 7 is a sectional view taken along line VII-VII in FIG. 2. FIG. 7 is a sectional view taken along the line VIII-VIII in FIG. 2. 1 is an enlarged sectional perspective view showing a semiconductor light emitting element of a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 2 is an enlarged sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 2 is a bottom view illustrating an example of a cover of the semiconductor light emitting device according to the first embodiment of the present disclosure. 1 is a system configuration diagram illustrating an example of an electronic device using a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of a main part showing one step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 14 is a main-portion cross-sectional view along the line XIV-XIV in FIG. 13. FIG. 2 is a plan view of a main part showing one step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 16 is an essential part cross sectional view along the XVI-XVI line in FIG. 15; FIG. 2 is a plan view of a main part showing one step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 18 is a cross-sectional view of a main part along the XVIII-XVIII line in FIG. 17. FIG. 18 is a cross-sectional view of a main part along a XIX-XIX line in FIG. 17. FIG. 3 is a cross-sectional view illustrating another example of the cover of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 5 is a bottom view illustrating still another example of the cover of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 4 is a plan view illustrating a first modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view illustrating a second modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 6 is a plan view of a main part showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 5 is a bottom view showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 26 is a cross-sectional view of FIG. 24 taken along the line XXVI-XXVI. It is a top view showing the semiconductor light emitting device concerning a 2nd embodiment of this indication. FIG. 28 is a cross-sectional view of FIG. 27 taken along the line XXVIII-XXVIII. FIG. 28 is a sectional view taken along the line XXIX-XXIX in FIG. 27. FIG. 28 is a cross-sectional view of a main part along a line XXX-XXX in FIG. 27. FIG. 11 is a cross-sectional view of a main part showing one step of a method for manufacturing a semiconductor light-emitting device according to a second embodiment of the present disclosure. It is a top view showing the semiconductor light emitting device concerning a 3rd embodiment of this indication. FIG. 33 is a cross-sectional view of FIG. 32 taken along the line XXXIII-XXXIII. FIG. 13 is a cross-sectional view of a principal part showing one step of a method for manufacturing a semiconductor light-emitting device according to a third embodiment of the present disclosure. It is a principal part top view showing the semiconductor light emitting device concerning a fourth embodiment of the present disclosure. It is a bottom view showing the semiconductor light emitting device concerning a fourth embodiment of the present disclosure. It is sectional drawing which follows the XXXVII-XXXVII line of FIG. FIG. 36 is a cross-sectional view of FIG. 35 taken along the line XXXVIII-XXXVIII. It is a top view showing the substrate of the semiconductor light emitting device concerning a 4th embodiment of this indication. It is a top view showing the substrate of the semiconductor light emitting device concerning a 4th embodiment of this indication. It is a top view showing the substrate of the semiconductor light emitting device concerning a 4th embodiment of this indication. It is a top view showing the substrate of the semiconductor light emitting device concerning a 4th embodiment of this indication. FIG. 43 is an essential part cross sectional view along the XLIII-XLIII line of FIG. 42; It is a principal part top view showing the 1st modification of the semiconductor light emitting device concerning a 4th embodiment of this indication. FIG. 45 is a cross-sectional view of FIG. 44 taken along the line XLV-XLV. It is a top view showing the substrate of the 1st modification of the semiconductor light emitting device concerning a 4th embodiment of this indication. It is a top view showing the substrate of the 2nd modification of the semiconductor light emitting device concerning a 4th embodiment of this indication. It is a principal part top view showing the semiconductor light emitting device concerning a 5th embodiment of this indication. FIG. 49 is a cross-sectional view of FIG. 48 taken along the line XLIX-XLIX. FIG. 49 is a cross-sectional view of FIG. 48 taken along the line LL. FIG. 15 is a cross-sectional view illustrating a first modification of the semiconductor light emitting device according to the fifth embodiment of the present disclosure. It is a principal part top view which shows an example of the ventilation part of the support part of this indication. FIG. 2 is a cross-sectional view of a main part illustrating an example of a ventilation section of a support section according to the present disclosure. It is a principal part top view which shows the other example of the ventilation part of the support part of this indication. It is a principal part top view which shows another example of the ventilation part of the support part of this indication. It is a principal part top view which shows another example of the ventilation part of the support part of this indication. It is a principal part top view which shows another example of the ventilation part of the support part of this indication. It is a principal part sectional view which shows another example of the ventilation part of the support part of this indication. It is a principal part sectional view which shows another example of the ventilation part of the support part of this indication. It is a principal part sectional view which shows another example of the ventilation part of the support part of this indication. It is a principal part sectional view which shows another example of the ventilation part of the support part of this indication.

  Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

  Terms such as “first”, “second”, and “third” in the present disclosure are used simply as labels and are not necessarily intended to permutate those objects.

<Semiconductor Light Emitting Device First Embodiment>
1 to 12 show a semiconductor light emitting device according to a first embodiment of the present disclosure. The semiconductor light emitting device A1 of the present embodiment includes a support 1, a semiconductor light emitting element 4, a light receiving element 8, and a cover 5.

  FIG. 1 is a perspective view showing the semiconductor light emitting device A1. FIG. 2 is a plan view showing the semiconductor light emitting device A1. FIG. 3 is a main part plan view showing the semiconductor light emitting device A1. FIG. 4 is a bottom view showing the semiconductor light emitting device A1. FIG. 5 is a sectional view taken along line VV in FIG. FIG. 6 is a sectional view taken along the line VI-VI in FIG. FIG. 7 is a sectional view taken along the line VII-VII in FIG. FIG. 8 is a sectional view taken along line VIII-VIII in FIG. FIG. 9 is an enlarged sectional perspective view showing a semiconductor light emitting element of the semiconductor light emitting device A1. FIG. 10 is an enlarged sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device A1. FIG. 11 is a bottom view illustrating an example of the cover of the semiconductor light emitting device A1. FIG. 12 is a system configuration diagram showing an example of an electronic device using the semiconductor light emitting device A1. The z direction corresponds to a first direction of the present disclosure.

  The shape and size of the semiconductor light emitting device A1 are not particularly limited. In the illustrated example, the semiconductor light emitting device A1 has a rectangular parallelepiped shape. The dimension in the x direction of the semiconductor light emitting device A1 is, for example, 2.8 mm to 4.0 mm, the dimension in the y direction is, for example, about 2.8 mm to 4.0 mm, and the dimension in the z direction is, for example, 1.2 mm to 3.0 mm. It is about 0 mm.

  The configuration of the support 1 is not particularly limited, and in the present embodiment, the support 1 includes the base 2 and the conductive portion 3.

  The base material 2 is made of a material whose surface is at least insulative. In the present embodiment, the base material 2 includes a first layer 21, a second layer 22, a third layer 23, and a fourth layer 24. The material of the first layer 21, the second layer 22, the third layer 23, and the fourth layer 24 of the base material 2 is not particularly limited, and is made of ceramics such as alumina and aluminum nitride in the present embodiment.

  The first layer 21 is a plate-shaped portion, and its shape is not particularly limited. In the illustrated example, the first layer 21 has a main surface 21a, a back surface 21b, a first surface 21c, a second surface 21d, a third surface 21e, and a fourth surface 21f. It is substantially rectangular.

  The main surface 21a and the back surface 21b face opposite sides in the z direction. The main surface 21a corresponds to the “first main surface” of the present disclosure.

  The first surface 21c and the second surface 21d face opposite sides in the y direction. The first surface 21c is located between the main surface 21a and the back surface 21b in the z direction, and in the illustrated example, is connected to the main surface 21a and the back surface 21b. The second surface 21d is located between the main surface 21a and the back surface 21b in the z direction, and in the illustrated example, is connected to the main surface 21a and the back surface 21b.

  The third surface 21e and the fourth surface 21f face opposite sides in the x direction. The third surface 21e is located between the main surface 21a and the back surface 21b in the z direction, and in the illustrated example, is connected to the main surface 21a and the back surface 21b. The fourth surface 21f is located between the main surface 21a and the back surface 21b in the z direction, and in the illustrated example, is connected to the main surface 21a and the back surface 21b.

  The second layer 22 is a plate-shaped portion, and its shape is not particularly limited. In the illustrated example, the second layer 22 includes a main surface 22a, a back surface 22b, a first surface 22c, a second surface 22d, a third surface 22e, a fourth surface 22f, a fifth surface 22g, a sixth surface 22h, It has a seventh surface 22i and an eighth surface 22j, and has a substantially rectangular annular shape when viewed in the z direction.

  The main surface 22a and the back surface 22b face opposite sides in the z direction. The back surface 22b faces the main surface 21a of the first layer 21 and is joined to each other. The main surface 21a and the back surface 22b are joined by, for example, laminating the above-mentioned ceramic materials and firing them.

  The first surface 22c and the second surface 22d face opposite sides in the y direction. The first surface 22c is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b. The second surface 22d is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b. The first surface 22c is flush with the first surface 21c. The second surface 22d is flush with the second surface 21d.

  The third surface 22e and the fourth surface 22f face opposite sides in the x direction. The third surface 22e is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b. The fourth surface 22f is located between the main surface 22a and the back surface 22b in the z direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The third surface 22e is flush with the third surface 21e. The fourth surface 22f is flush with the fourth surface 21f.

  The fifth surface 22g and the sixth surface 22h are located between the first surface 22c and the second surface 22d in the y direction. The fifth surface 22g and the sixth surface 22h face opposite sides in the y direction. The fifth surface 22g faces the same side as the second surface 22d. The sixth surface 22h faces the same side as the first surface 22c. The fifth surface 22g is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b. The sixth surface 22h is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b.

  The seventh surface 22i and the eighth surface 22j are located between the third surface 22e and the fourth surface 22f in the x direction. The seventh surface 22i and the eighth surface 22j face opposite sides in the x direction. The seventh surface 22i faces the same side as the fourth surface 22f. The eighth surface 22j faces the same side as the third surface 22e. The seventh surface 22i is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b. The eighth surface 22j is located between the main surface 22a and the back surface 22b in the z direction, and in the illustrated example, is connected to the main surface 22a and the back surface 22b.

  The third layer 23 is a plate-shaped portion, and its shape is not particularly limited. In the illustrated example, the third layer 23 includes a main surface 23a, a back surface 23b, a first surface 23c, a second surface 23d, a third surface 23e, a fourth surface 23f, a fifth surface 23g, a sixth surface 23h, It has a seventh surface 23i and an eighth surface 23j, and has a substantially rectangular annular shape when viewed in the z direction.

  The main surface 23a and the back surface 23b face opposite sides in the z direction. The back surface 23b faces the main surface 22a of the second layer 22, and is joined to each other. The main surface 22a and the back surface 23b are joined by, for example, laminating the above-described ceramic materials and firing them. The main surface 23a corresponds to an example of a “second main surface” of the present disclosure.

  The first surface 23c and the second surface 23d face opposite sides in the y direction. The first surface 23c is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The second surface 23d is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The first surface 23c is flush with the first surface 22c. The second surface 23d is flush with the second surface 22d.

  The third surface 23e and the fourth surface 23f face opposite sides in the x direction. The third surface 23e is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The fourth surface 23f is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The third surface 23e is flush with the third surface 22e. The fourth surface 23f is flush with the fourth surface 22f.

  The fifth surface 23g and the sixth surface 23h are located between the first surface 23c and the second surface 23d in the y direction. The fifth surface 23g and the sixth surface 23h face opposite sides in the y direction. The fifth surface 23g faces the same side as the second surface 23d. The sixth surface 23h faces the same side as the first surface 23c. The fifth surface 23g is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The sixth surface 23h is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The fifth surface 23g is flush with the fifth surface 22g. The sixth surface 23h is flush with the sixth surface 22h.

  The seventh surface 23i and the eighth surface 23j are located between the third surface 23e and the fourth surface 23f in the x direction. The seventh surface 23i and the eighth surface 23j face opposite sides in the x direction. The seventh surface 23i faces the same side as the fourth surface 23f. The eighth surface 23j faces the same side as the third surface 23e. The seventh surface 23i is located between the main surface 23a and the back surface 23b in the z direction, and in the illustrated example, is connected to the main surface 23a and the back surface 23b. The eighth surface 23j is located between the main surface 23a and the back surface 23b in the z direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The seventh surface 23i is flush with the seventh surface 22i. The eighth surface 23j is flush with the eighth surface 22j.

  The fourth layer 24 is a plate-shaped portion, and its shape is not particularly limited. In the illustrated example, the fourth layer 24 includes a main surface 24a, a back surface 24b, a first surface 24c, a second surface 24d, a third surface 24e, a fourth surface 24f, a fifth surface 24g, a sixth surface 24h, It has a seventh surface 24i and an eighth surface 24j, and has a substantially rectangular annular shape when viewed in the z direction.

  The main surface 24a and the back surface 24b face opposite sides in the z direction. The back surface 24b faces the main surface 23a of the third layer 23 and is joined to each other. The main surface 23a and the back surface 24b are joined by, for example, laminating the above-described ceramic materials and firing them.

  The first surface 24c and the second surface 24d face opposite sides in the y direction. The first surface 24c is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. The second surface 24d is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. The first surface 24c is flush with the first surface 23c. The second surface 24d is flush with the second surface 23d.

  The third surface 24e and the fourth surface 24f face opposite sides in the x direction. The third surface 24e is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. The fourth surface 24f is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. The third surface 24e is flush with the third surface 23e. The fourth surface 24f is flush with the fourth surface 23f.

  The fifth surface 24g and the sixth surface 24h are located between the first surface 24c and the second surface 24d in the y direction. The fifth surface 24g and the sixth surface 24h face opposite sides in the y direction. The fifth surface 24g faces the same side as the second surface 24d. The sixth surface 24h faces the same side as the first surface 24c. The fifth surface 24g is located between the main surface 24a and the back surface 24b in the z direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. The sixth surface 24h is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. Further, in the illustrated example, the fifth surface 24g is located between the first surface 24c and the fifth surface 23g when viewed in the z direction. The sixth surface 24h is located between the second surface 24d and the sixth surface 23h when viewed in the z direction.

  The seventh surface 24i and the eighth surface 24j are located between the third surface 24e and the fourth surface 24f in the x direction. The seventh surface 24i and the eighth surface 24j face opposite sides in the x direction. The seventh surface 24i faces the same side as the fourth surface 24f. The eighth surface 24j faces the same side as the third surface 24e. The seventh surface 24i is located between the main surface 24a and the back surface 24b in the z direction, and in the illustrated example, is connected to the main surface 24a and the back surface 24b. The eighth surface 24j is located between the main surface 24a and the back surface 24b in the z direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. In the illustrated example, the seventh surface 24i is located between the third surface 24e and the seventh surface 23i when viewed in the z direction. The eighth surface 24j is located between the fourth surface 24f and the eighth surface 23j when viewed in the z direction.

  The base material 2 has a housing 7. In the present embodiment, the housing portion 7 includes the main surface 21a, the fifth surface 22g, the sixth surface 22h, the seventh surface 22i, the eighth surface 22j, the fifth surface 23g, the sixth surface 23h, the seventh surface 23i, and This is a space defined by the eighth surface 23j.

  The substrate 2 has an opening 27. The opening 27 is a portion where the housing 7 opens. In the illustrated example, the opening 27 is constituted by the upper edge of the fifth surface 23g, the sixth surface 23h, the seventh surface 23i, and the eighth surface 23j in the z-direction, that is, the inner edge of the main surface 23a. Have been.

  The substrate 2 has a ventilation part 6. The ventilation part 6 is connected to the housing part 7 and the outside of the semiconductor light emitting device A1. The ventilation part 6 allows gas to flow between the housing part 7 and the outside of the semiconductor light emitting device A1. The position and structure of the ventilation section 6 are not particularly limited, and in the illustrated example, the ventilation section 6 is connected to the eighth surface 22j and the fourth surface 22f. The ventilation part 6 is arranged on the opposite side of the semiconductor light emitting element 4 with respect to the third main surface part 31c in the x direction. A specific example of the structure of the ventilation section 6 will be described later.

  The substrate 2 has a concave portion 28. The concave portion 28 is connected to the main surface 24a and the back surface 21b, and extends along the z direction. Further, the concave portion 28 is connected to the first surface 21c, the third surface 21e, the first surface 22c, the third surface 22e, the first surface 23c, the third surface 23e, the first surface 24c, and the third surface 24e.

  The conductive portion 3 is made of a conductive material, and for example, Cu, Ni, Ti, Au or the like is appropriately selected. Further, the conductive portion 3 may be provided with a surface layer made of Sn.

  In the present embodiment, the conductive portion 3 includes a main surface portion 31, a back surface portion 32, and a connecting portion 33.

  The main surface portion 31 is arranged on the main surface 21 a of the base material 2. In the illustrated example, the main surface portion 31 includes a first main surface portion 31a, a second main surface portion 31b, a third main surface portion 31c, and a fourth main surface portion 31d.

  The first main surface portion 31a is provided along the fifth surface 22g and the seventh surface 22i when viewed in the z direction. The second main surface portion 31b is provided along the sixth surface 22h and the eighth surface 22j when viewed in the z direction. In the illustrated example, the first main surface portion 31a is larger than the second main surface portion 31b.

  The third main surface portion 31c is arranged along the fifth surface 22g and the eighth surface 22j when viewed in the z direction. The third main surface portion 31c is located between the first main surface portion 31a and the eighth surface 22j in the x direction, and is located between the second main surface portion 31b and the fifth surface 22g in the y direction. The third main surface 31c is smaller than the first main surface 31a and the second main surface 31b.

  The fourth main surface portion 31d is arranged along the sixth surface 22h and the seventh surface 22i when viewed in the z direction. The fourth main surface portion 31d is located between the second main surface portion 31b and the seventh surface 22i in the x direction, and is located between the first main surface portion 31a and the sixth surface 22h in the y direction. The fourth main surface 31d is smaller than the first main surface 31a and the second main surface 31b, and larger than the third main surface 31c.

The back surface part 32 is arranged on the back surface 21 b of the base material 2. In the illustrated example, the back portion 32 includes a first back portion 32a, a second back portion 32b, a third back portion 32c, a fourth back portion 32d, a fifth back portion 32e, a sixth back portion 32f, and a seventh back portion 32f. It includes a back surface portion 32g and an eighth back surface portion 32h.

  The first back surface portion 32a is provided along the first surface 21c and the third surface 21e when viewed in the z direction, and overlaps the first main surface portion 31a when viewed in the z direction. The second back surface portion 32b is provided along the second surface 21d and the fourth surface 21f when viewed in the z direction, and overlaps the second main surface portion 31b when viewed in the z direction.

  The third back surface portion 32c is provided along the first surface 21c and the fourth surface 21f when viewed in the z direction, and overlaps the third main surface portion 31c when viewed in the z direction. The fourth back surface portion 32d is provided along the second surface 21d and the third surface 21e when viewed in the z direction, and overlaps the fourth main surface portion 31d when viewed in the z direction.

  The fifth back surface portion 32e is provided along the first surface 21c when viewed in the z direction, and is located between the first back surface portion 32a and the third back surface portion 32c in the x direction.

  The sixth back surface portion 32f is provided along the second surface 21d when viewed in the z direction, and is located between the second back surface portion 32b and the fourth back surface portion 32d in the x direction.

  The seventh back surface portion 32g is provided along the third surface 21e when viewed in the z direction, and is located between the first back surface portion 32a and the fourth back surface portion 32d in the y direction.

  The eighth back surface portion 32h is provided along the fourth surface 21f when viewed in the z direction, and is located between the second back surface portion 32b and the third back surface portion 32c in the y direction.

  The connecting portion 33 forms a conduction path in the z direction. In the present embodiment, the connecting portion 33 penetrates the base material 2 in the z direction. In the illustrated example, the communication unit 33 includes a first communication unit 33a, a second communication unit 33b, a third communication unit 33c, a fourth communication unit 33d, a fifth communication unit 33e, a sixth communication unit 33f, and a seventh communication unit. It includes a communication section 33g and an eighth communication section 33h. In addition, the first communication part 33a, the second communication part 33b, the third communication part 33c, and the fourth communication part 33d correspond to the “element communication part” of the present disclosure. The fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, and the eighth connecting portion 33h correspond to a "cover connecting portion" of the present disclosure.

  The first connecting portion 33a penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The first connecting portion 33a is connected to the first main surface portion 31a and the first back surface portion 32a, and makes them conductive.

  The second connecting portion 33b penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The second connecting portion 33b is connected to the second main surface portion 31b and the second back surface portion 32b, and makes them conductive.

  The third connecting portion 33c penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The third connecting portion 33c is connected to the third main surface portion 31c and the third back surface portion 32c, and makes them conductive.

  The fourth connecting portion 33d penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The fourth connecting portion 33d is connected to the fourth main surface portion 31d and the fourth back surface portion 32d, and makes them conductive.

  The fifth connecting portion 33e penetrates the first layer 21, the second layer 22, and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The fifth connecting portion 33e is connected to the fifth back surface portion 32e.

  The sixth connecting portion 33f penetrates the first layer 21, the second layer 22, and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The sixth connecting portion 33f is connected to the sixth back surface portion 32f.

  The seventh connecting portion 33g penetrates the first layer 21, the second layer 22, and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The seventh connecting portion 33g is connected to the seventh back surface portion 32g.

  The eighth connecting portion 33h penetrates the first layer 21, the second layer 22, and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The eighth connecting portion 33h is connected to the eighth back surface portion 32h.

  The semiconductor light emitting element 4 is a light source in the semiconductor light emitting device A1, and emits light in a predetermined wavelength band. The specific configuration of the semiconductor light emitting device 4 is not particularly limited, and may be a semiconductor laser device, an LED device, or the like. In the present embodiment, the semiconductor light emitting device 4 is a semiconductor laser device, and employs a VCSEL device. The semiconductor light emitting device 4 is die-bonded to the first main surface portion 31 a of the conductive portion 3 and is supported on the main surface 21 a of the first layer 21 of the base 2. Light from the semiconductor light emitting element 4 passes through the opening 27 of the base material 2 and is emitted to the outside.

  As shown in FIG. 3, the semiconductor light emitting device 4 includes a first electrode 41 and a plurality of light emitting regions 460 in a plan view. The first electrode 41 is disposed on the third main surface 31c side in the x direction. The plurality of light emitting regions 460 are discretely arranged in regions other than the first electrode 41 in a plan view of the semiconductor light emitting device 4.

  As shown in FIGS. 9 and 10, the semiconductor light emitting device 4 of the present example has a first electrode 41, a second electrode 42, a second substrate 451, a fourth semiconductor layer 452, an active layer 453, a fifth semiconductor layer 454, A plurality of light emitting regions 460 are provided, including a current confinement layer 455, an insulating layer 456, and a conductive layer 457. It should be noted that the configuration example shown in the figure is an example of a VCSEL element as the semiconductor light emitting element 4, and is not limited to this configuration. FIG. 10 shows an enlarged portion including one light emitting region 460.

  The second substrate 451 is made of a semiconductor. The semiconductor forming the second substrate 451 is, for example, GaAs. The semiconductor forming the second substrate 451 may be other than GaAs.

The active layer 453 is made of, for example, a compound semiconductor that emits light in a 980 nm band (hereinafter, referred to as “λa”) by spontaneous emission and stimulated emission. The active layer 453 is located between the fourth semiconductor layer 452 and the fifth semiconductor layer 454. In the present embodiment, the multi-quantum well structure is formed by alternately stacking undoped GaAs well layers and undoped AlGaAs barrier layers (barrier layers). For example, undoped Al _0.35 Ga _0.65 As barrier layers and undoped GaAs well layers are formed alternately and repeatedly in 2 to 6 periods.

The fourth semiconductor layer 452 is typically a DBR (Distributed Bragg Reflector) layer, and is formed on the second substrate 451. The fourth semiconductor layer 452 is made of a semiconductor having the first conductivity type. In this example, the first conductivity type is an n-type. The fourth semiconductor layer 452 is configured as a DBR for efficiently reflecting light emitted from the active layer 453. More specifically, the active layer 453 is formed by stacking a plurality of pairs of two layers each of which is an AlGaAs layer having a thickness of λa / 4 and has a different reflectance. More specifically, the fourth semiconductor layer 452 has, for example, an n-type Al _0.16 Ga _0.84 As layer (low Al composition layer) having a thickness of, for example, 600 ° and a relatively low Al composition, and a thickness of, for example, 700 °. An n-type Al _0.92 Ga _0.16 As layer having a relatively high Al composition (high Al composition layer) is alternately and repeatedly laminated for a plurality of cycles (for example, 20 cycles). The n-type Al _0.16 Ga _0.84 As layer and the n-type Al _0.92 Ga _0.16 As layer have, for example, 2 × 10 ¹⁷ cm ^{−3 to} 3 × 10 ¹⁸ cm ⁻³ and 2 × 10 ¹⁷ cm ^{−3 to} 3 × 10, respectively. ^An n-type impurity (for example, Si) is doped at a concentration of ¹⁸ cm ^-3 .

The fifth semiconductor layer 454 is typically a DBR layer and is made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. The fourth semiconductor layer 452 is located between the fifth semiconductor layer 454 and the second substrate 451. The fifth semiconductor layer 454 is configured as a DBR for efficiently reflecting light emitted from the active layer 453. More specifically, the fifth semiconductor layer 454 is formed by stacking a plurality of pairs of two layers each of which is an AlGaAs layer having a thickness of λa / 4 and has a different reflectance. The fifth semiconductor layer 454 includes, for example, a p-type Al _0.16 Ga _0.84 As layer (low Al composition layer) having a relatively low Al composition and a p-type Al _0.92 Ga _0.16 As layer (high Al composition) having a relatively high Al composition. (A composition layer) are alternately and repeatedly laminated for a plurality of cycles (for example, 20 cycles).

  The current confinement layer 455 is located in the fifth semiconductor layer 454. The current constriction layer 455 contains a large amount of Al, for example, and is made of a layer that is easily oxidized. The current confinement layer 455 is formed by oxidizing this easily oxidizable layer. The current confinement layer 455 is not necessarily formed by oxidation, but may be formed by another method (for example, ion implantation). An opening 4551 is formed in the current confinement layer 455. A current flows through the opening 4551.

The insulating layer 456 is formed on the fifth semiconductor layer 454. Insulating layer 456 is made of, for example, SiO ₂ . An opening 4561 is formed in the insulating layer 456.

The conductive layer 457 is formed over the insulating layer 456. The conductive layer 457 is made of a conductive material (for example, metal). The conductive layer 457 is electrically connected to the fifth conductive layer 354 through the opening 4561 of the insulating layer 456. The conductive layer 457 has an opening 4571.

  The light emitting region 460 is a region where light from the active layer 453 is emitted directly or after reflection. In the present example, the light emitting region 460 has an annular shape in plan view, but the shape is not particularly limited. The light emitting region 460 is formed by stacking the above-described fifth semiconductor layer 454, the current confinement layer 455, the insulating layer 456, and the conductive layer 457, and the opening 4551 of the current confinement layer 455, the opening 4561 of the insulating layer 456, and the opening 4571 of the conductive layer 457. And the like are provided. In the light-emitting region 460, light from the active layer 453 is emitted through the opening 4571 of the conductive layer 457.

  The first electrode 41 is made of, for example, a metal and is electrically connected to the fifth semiconductor layer 454. The second electrode 42 is formed on the back surface of the second substrate 451, and is made of, for example, metal. The second electrode 42 is die-bonded to the first main surface 31a by a conductive bonding material 48 such as paste or solder containing a metal such as Ag. Thus, the second electrode 42 is electrically connected to the first main surface 31a of the conductive portion 3.

  In the present embodiment, the first electrode 41 is connected to the third main surface 31c by a wire 49. The wire 49 is made of a metal such as Au, for example, and is bonded to the first electrode 41 and the third main surface 31c. The number of the wires 49 is not particularly limited, and in the illustrated example, a plurality of wires 49 (four wires 49) are provided. In the illustrated example, the first bonding portion of the wire 49 is provided on the first electrode 41, and the second bonding portion is provided on the third main surface portion 31c.

  The light receiving element 8 is an element having a photoelectric conversion function of generating an electromotive force by receiving light emitted from the semiconductor light emitting element 4. The light receiving element 8 is die-bonded to the second main surface portion 31b by paste or solder containing a metal such as Ag, for example. The light receiving element 8 is connected to the fourth main surface portion 31d by a wire 89. The wire 89 is made of a metal such as Au, for example, and is bonded to the light receiving element 8 and the fourth main surface 31d.

  The cover 5 covers the opening 27 of the base material 2 as viewed in the z direction. The cover 5 allows light from the semiconductor light emitting element 4 to pass therethrough. In the present embodiment, the cover 5 includes a first layer 51, a second layer 52, and a third layer 53.

  The first layer 51 is made of a material such as glass that transmits light from the semiconductor light emitting element 4. In the present embodiment, the first layer 51 is made of transparent glass. In the illustrated example, the first layer 51 has a main surface 51a, a back surface 51b, a first surface 51c, a second surface 51d, a third surface 51e, and a fourth surface 51f, and is rectangular when viewed in the z direction. Shape. The main surface 51a corresponds to a “cover main surface” of the present disclosure, and the back surface 51b corresponds to a “cover back surface” of the present disclosure. The main surface 51a faces the same side as the main surface 21a and the main surface 24a. The back surface 51b faces a part of the main surface 23a. The main surface 51a is substantially at the same height as the main surface 24a in the z direction.

  The first surface 51c and the second surface 51d face opposite sides in the y direction. The first surface 51c faces the fifth surface 24g. The second surface 51d faces the sixth surface 24h.

  The third surface 51e and the fourth surface 51f face opposite sides in the x direction. The third surface 51e faces the seventh surface 24i. The fourth surface 51f faces the eighth surface 24j. As described above, the first layer 51 (the cover 5) of the present embodiment is surrounded by the base material 2 in the x direction and the y direction that are perpendicular to the z direction. The fifth surface 24g, the sixth surface 24h, the seventh surfaces 24i and 24j of the substrate 2 correspond to the “inner surface” of the present disclosure.

  The second layer 52 is a layer that is disposed on the first layer 51 and that transmits light from the semiconductor light emitting element 4 while diffusing the light. Examples of the second layer 52 include a resin layer that has been subjected to an optical process for realizing a diffusion function. Note that the second layer 52 may be a layer in which a surface treatment is performed on a surface layer of the first layer 51. In the illustrated example, the second layer 52 is disposed on the main surface 51a.

  The third layer 53 is a layer made of a conductive material, and the conduction state changes according to the deformation state of the first layer 51. The deformation state of the first layer 51 is not limited to the elastic deformation, and is a concept including a state in which the surface of the first layer 51 is damaged or the like, and a state in which the first layer 51 is broken. The material of the third layer 53 is not particularly limited, and in this embodiment, ITO is used. For this reason, the third layer 53 transmits light from the semiconductor light emitting element 4. The shape and size of the third layer 53 are not particularly limited. In the illustrated example, the third layer 53 is provided on the entire back surface 51b of the first layer 51 as shown in FIG. In this case, the third layer 53 overlaps the entire semiconductor light emitting element 4 and the light receiving element 8 as viewed in the z direction. The third layer 53 is preferably made of a transparent conductive material, but may be made of an opaque conductive material. In this case, it is preferable that the third layer 53 be provided on the surface of the first layer 51 in, for example, a fine line shape from the viewpoint of securing the light amount.

  In the present embodiment, the third layer 53 of the cover 5 is electrically connected to the conductive portion 3 via the conductive bonding material 58. The conductive bonding material 58 has conductivity, and is, for example, a resin material containing conductive particles or conductive filler, or an anisotropic conductive film (ACF). In the illustrated example, a conductive bonding material 58 is provided in substantially the entire region where the cover 5 and the main surface 23a overlap. Thus, the space between the cover 5 and the main surface 23a is substantially dense. In the illustrated example, the second layer 52 is conductively connected to the fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, and the eighth connecting portion 33h via a plurality of conductive bonding materials 58. ing.

  FIG. 12 is a system configuration diagram showing an example of an electronic device using the semiconductor light emitting device A1. The electronic device C1 shown in the figure has a semiconductor light emitting device A1 and a controller Ct. The semiconductor light emitting device A1 and the controller Ct are mounted on, for example, a circuit board (not shown). In the semiconductor light emitting device A1, the third back surface portion 32c is electrically connected to the anode electrode of the semiconductor light emitting device 4, and the first back surface portion 32a is electrically connected to the cathode electrode of the semiconductor light emitting device 4. The fourth back surface portion 32d is electrically connected to the anode electrode of the light receiving element 8, and the second back surface portion 32b is electrically connected to the cathode electrode of the light receiving element 8. The seventh back surface portion 32g and the eighth back surface portion 32h are electrically connected to both ends of the third layer 53 in the x direction, and the fifth back surface portion 32e and the sixth back surface portion 32f are both end portions of the third layer 53 in the y direction. It is conducting.

  The first back portion 32a, the second back portion 32b, the third back portion 32c, the fourth back portion 32d, the fifth back portion 32e, the sixth back portion 32f, the seventh back portion 32g, and the eighth back portion 32h are interconnected. To the controller Ct. The controller Ct performs light emission control of the semiconductor light emitting element 4, detection control of the light receiving state by the light receiving element 8, and detection control of the conduction state of the third layer 53.

  Next, an example of a method for manufacturing the semiconductor light emitting device A1 will be described below with reference to FIGS.

  First, as shown in FIGS. 13 and 14, a support 10 is prepared. The support 10 includes a base material 20 and a conductive portion 30 and is an intermediate material that can form a plurality of supports 1. The semiconductor light emitting device A1 may be manufactured using one support 1 by a method similar to the following manufacturing method.

  The substrate 20 is for forming the substrate 2 and includes a first layer 210, a second layer 220, a third layer 230, and a fourth layer 240. The first layer 210, the second layer 220, the third layer 230, and the fourth layer 240 are made of the same material as the first layer 21, the second layer 22, the third layer 23, and the fourth layer 24. The first layer 210, the second layer 220, the third layer 230, and the fourth layer 240 are formed with respective surfaces and the like for forming the plurality of storage units 7. Further, a plurality of through holes 280 are formed in the base material 20. The through hole 280 is a circular through hole as viewed in the z direction.

  Next, as shown in FIGS. 15 and 16, the semiconductor light emitting element 4 and the light receiving element 8 are mounted. The semiconductor light emitting element 4 is arranged on the first main surface portion 31a, and is joined to the first main surface portion 31a by a paste or a solder containing a metal such as Ag, for example. Further, the light receiving element 8 is arranged on the second main surface portion 31b, and is joined to the second main surface portion 31b by a paste or a solder containing a metal such as Ag, for example. Next, a plurality of wires 49 are bonded to the first electrode 41 and the third main surface 31c of the semiconductor light emitting element 4. Further, a wire 89 is bonded to the light receiving element 8 and the fourth main surface portion 31d.

  Next, as shown in FIGS. 17 to 19, the cover 5 is attached to the support 10. The cover 5 is attached using, for example, a conductive bonding material 58. Specifically, in the third layer 53 of the cover 5, as viewed in the z direction, a portion overlapping the fifth communication portion 33e, the sixth communication portion 33f, the seventh communication portion 33g, and the eighth communication portion 33h, and the fifth communication portion. 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, and the eighth connecting portion 33h are electrically connected to each other by the conductive bonding material 58.

  Next, the support 10 is divided along the division line DL in the drawing. This division may be a method of dividing the base material 20 of the support 10 along a groove or the like provided in the support 10 in advance, or a method of cutting using a blade or the like. By this division, a plurality of semiconductor light emitting devices A1 are obtained. The through hole 280 becomes the concave portion 28 of the base material 2 by division.

  Next, the operation of the semiconductor light emitting device A1 will be described.

  According to the present embodiment, if damage such as a crack occurs in the first layer 51 of the cover 5, a crack may occur in the third layer 53. Thereby, the conduction state of the third layer 53 changes. By detecting this change by, for example, the controller Ct, it is possible to determine that some trouble has occurred in the cover 5, and for example, the light emission of the semiconductor light emitting element 4 can be stopped. It is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed.

  As shown in FIG. 2, the third layer 53 of the cover 5 is electrically connected to the seventh connecting portion 33g and the eighth connecting portion 33h that are separated in the x direction, and the fifth layer 33e and the third connecting portion 33e that are separated in the y direction. Conduction is made to the six communication parts 33f. Therefore, when a crack or the like occurs in the third layer 53 (the first layer 51) along the x direction, the conduction state of the third layer 53 between the fifth connecting portion 33e and the sixth connecting portion 33f separated in the y direction. Changes. When a crack or the like occurs in the third layer 53 (first layer 51) along the y direction, the conduction state of the third layer 53 between the seventh connecting portion 33g and the eighth connecting portion 33h separated in the x direction is changed. Change. Thereby, it is possible to detect that cracks and the like along a plurality of directions have occurred in the first layer 51.

  The fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, the eighth connecting portion 33h as the cover connecting portion, and the back surface 51b face each other. By arranging the third layer 53 on the back surface 51b, the fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, the eighth connecting portion 33h and the third layer 53 are formed by the conductive bonding material 58. Can be reliably conducted.

  The accommodation section 7 communicates with the outside via the ventilation section 6. For example, when the semiconductor light emitting device A1 is mounted on a circuit board and heated in a reflow furnace or the like, the gas in the housing 7 expands. This expanded gas can be guided to the outside through the ventilation section 6. Accordingly, it is possible to prevent the internal pressure of the storage unit 7 from becoming unduly high, and to suppress, for example, the cover 5 from coming off the support 1. Therefore, the reliability of the semiconductor light emitting device A1 can be improved.

  20 to 61 show modified examples and other embodiments of the present disclosure. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

<Cover 5 First Modification>
FIG. 20 shows a first modification of the cover 5. The cover 5 of the present modified example includes a first layer 51A, a first layer 51B, a second layer 52, and a third layer 53. The first layer 51A and the first layer 51B are made of the same material as the first layer 51 of the above-described example. The second layer 52 is interposed between the first layer 51A and the first layer 51B.

  According to such a modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. Further, as understood from the present modification, the specific configuration of the second layer 52 is not limited as long as the second layer 52 transmits the light from the semiconductor light emitting element 4 while diffusing the light.

<Cover 5 Second Modification>
FIG. 21 shows a second modification of the cover 5. In the cover 5 of the present modification, the third layer 53 is formed in a pattern when viewed in the z direction. Specifically, the third layer 53 has a plurality of first portions 531 and a plurality of second portions 532. The first portion 531 and the second portion 532 extend along different directions. In the illustrated example, the first portion 531 extends along the x direction, and the second portion 532 extends along the y direction. The ends of the first part 531 and the second part 532 are connected to each other. Since the plurality of first portions 531 and the plurality of second portions 532 are connected alternately, the third layer 53 has a first spiral portion 53a, a second spiral portion 53b, and a folded portion 53c, When viewed in the z-direction, it has a continuous bent line shape. The first spiral part 53a and the second spiral part 53b have a spiral shape from the outside to the inside, and are arranged substantially parallel to each other. The folded part 53c connects the inner ends of the first spiral part 52a and the second spiral part 53b. In this example, for example, both ends of the third layer 53 in the y direction are electrically connected to the above-described fifth connecting portion 33e and sixth connecting portion 33f.

  According to such a modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. Further, according to the present modification, when a crack occurs in any part of the first layer 51 in the x direction, one of the plurality of second portions 532 extending in the y direction is disconnected. In addition, when a crack is generated in any part of the first layer 51 along the y direction, one of the plurality of first portions 531 extending along the x direction is disconnected. For this reason, according to this modification, although the third layer 53 constitutes only one conduction path connecting the fifth connection part 33e and the sixth connection part 33f, any one of the first layers 51 It is possible to detect the occurrence of a crack along an unspecified direction at a location.

<Semiconductor Light Emitting Device First Embodiment First Modification>
FIG. 22 shows a first modification of the semiconductor light emitting device A1. The semiconductor light emitting device A11 of this modification is different from the above-described example in the region where the third layer 53 of the cover 5 is provided. The third layer 53 of this modification is provided near the peripheral end of the first layer 51 of the cover 5 and has a rectangular ring shape when viewed in the z direction. Further, the third layer 53 surrounds the semiconductor light emitting element 4 and the light receiving element 8 when viewed in the z direction, and does not overlap with the semiconductor light emitting element 4 and the light receiving element 8. Further, in the illustrated example, the third layer 53 is included in the main surface 23a of the third layer 23 when viewed in the z direction.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. In addition, since the third layer 53 does not overlap with the semiconductor light emitting element 4 and the light receiving element 8, light from the semiconductor light emitting element 4 and light coming to the light receiving element 8 are suppressed from being attenuated by the third layer 53. can do.

<Semiconductor Light Emitting Device First Embodiment Second Modification>
FIG. 23 shows a second modification of the semiconductor light emitting device A1. In the semiconductor light emitting device A12 of this modification, a first bonding portion of the wire 49 is provided on the third main surface portion 31c, and a second bonding portion is provided on the first electrode 41 of the semiconductor light emitting element 4. It is preferable that a so-called bump portion to which a molten wire ball is attached is provided between the second bonding portion of the wire 49 and the first electrode 41.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. Further, the dimension of the wire 49 in the z direction can be reduced, which is advantageous for miniaturizing the semiconductor light emitting device A12.

<Semiconductor Light Emitting Device First Embodiment Third Modification>
24 to 26 show a third modification of the semiconductor light emitting device A1. The semiconductor light emitting device A13 of this modification is different from the above embodiment mainly in the configuration of the conductive portion 3.

  FIG. 24 is a main part plan view showing the semiconductor light emitting device A13. FIG. 25 is a bottom view showing the semiconductor light emitting device A11. FIG. 26 is a sectional view taken along the line XXVI-XXVI in FIG.

  The main surface portion 31 of the present modification includes a first main surface portion 31a, a second main surface portion 31b, and a third main surface portion 31c. The first main surface portion 31a is formed along substantially the entire length of the eighth surface 22j.

  In the communication portion 33 of the present modification, the first communication portion 33a and the fourth communication portion 33d overlap with the first main surface portion 31a in the z direction and are connected to the first main surface portion 31a. Further, the second main surface portion 31b and the third main surface portion 31c, the second connecting portion 33b and the third connecting portion 33c overlap the second layer 22, the third layer 23 and the fourth layer 24 when viewed in the z direction. .

  The back surface portion 32 of the present modified example includes a ninth back surface portion 32i. The ninth back surface portion 32i, when viewed in the z direction, includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, a fourth back surface portion 32d, a fifth back surface portion 32e, a sixth back surface portion 32f, and a seventh back surface portion 32f. It is surrounded by a back surface portion 32g and an eighth back surface portion 32h. The ninth back surface portion 32i is connected to the first communication portion 33a and the fourth communication portion 33d.

  The light receiving element 8 is connected to the first main surface 31a by a wire 89.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. In the present modification, the first main surface portion 31a on which the semiconductor light emitting element 4 is mounted is connected to the ninth communication portion 33i via the first connection portion 33a and the fourth connection portion 33d. Thereby, the heat from the semiconductor light emitting element 4 can be more efficiently radiated.

<Semiconductor Light Emitting Device Second Embodiment>
27 to 31 illustrate a semiconductor light emitting device according to the second embodiment of the present disclosure. The semiconductor light-emitting device A2 of the present embodiment is different from the above-described embodiment mainly in the configuration of the connecting portion 33 and the conduction mode of the connecting portion 33 and the cover 5.

  FIG. 27 is a plan view showing the semiconductor light emitting device A2. FIG. 28 is a sectional view taken along the line XXVIII-XXVIII in FIG. FIG. 29 is a sectional view taken along the line XXIX-XXIX in FIG. FIG. 30 is a cross-sectional view of a main part along line XXX-XXX in FIG. FIG. 31 is a main-portion cross-sectional view showing one step of a method for manufacturing the semiconductor light emitting device A2.

  In the present embodiment, the substrate 2 has concave portions 26i to 26l. The recesses 26i to 26l are recessed inward of the substrate 2 when viewed in the z direction. The concave portions 26i to 26l extend along the z direction and reach the main surface 24a and the back surface 21b. The concave portion 26i and the concave portion 26j are arranged separately on both sides in the y direction with the housing portion 7 interposed therebetween. The concave portions 26k and 26l are arranged separately on both sides in the x direction with the housing portion 7 interposed therebetween. Such a base material 2 may be formed of, for example, a glass epoxy resin. The main surface 24a of the present embodiment corresponds to an example of the “second main surface” of the present disclosure.

  The conductive portion 3 of the present embodiment has pad portions 31i, 31j, 31k, and 31l. The pad portions 31i, 31j, 31k, and 31l are formed on the main surface 24a of the fourth layer 24. The pad portion 31i is formed along the first surface 24c and the concave portion 26i, and is substantially semi-annular when viewed in the z direction. The pad portion 31j is formed along the second surface 24d and the concave portion 26j, and has a substantially semi-annular shape when viewed in the z direction. The pad portion 31k is formed along the third surface 24e and the concave portion 26k, and is substantially semi-annular when viewed in the z direction. The pad portion 31l is formed along the fourth surface 24f and the concave portion 26l, and is substantially semi-annular when viewed in the z direction. As shown in FIG. 30, the pad portion 31k has a protrusion 311k. The protrusion 311k is a portion where the left end in the x direction of the pad portion 31k projects upward in the z direction along the third surface 24e. The same applies to the pads 31i, 31j, and 31l.

  The communication unit 33 of the present embodiment includes a first communication unit 33a, a second communication unit 33b, a third communication unit 33c, and a fourth communication unit 33d, a ninth communication unit 33i, a tenth communication unit 33j, and an eleventh communication unit. 33k and a twelfth communication part 331. The ninth communication part 33i, the tenth communication part 33j, the eleventh communication part 33k, and the twelfth communication part 331 correspond to the “cover communication part” of the present disclosure.

  As shown in FIG. 29, the ninth communication portion 33i is arranged on the concave portion 26i. The ninth communication portion 33i has reached the main surface 23a. The ninth connection portion 33i is connected to the pad portion 31i and the fifth back surface portion 32e described above. Note that the conductive portion 3 is not provided in the concave portion 28.

  The tenth connecting portion 33j is arranged on the concave portion 26j. The tenth connecting portion 33j has reached the main surface 23a. In addition, the tenth connection part 33j is connected to the pad part 31j and the sixth back surface part 32f described above.

  The eleventh connecting portion 33k is arranged on the concave portion 26k. The eleventh connecting portion 33k has reached the main surface 23a. The eleventh connecting portion 33k is connected to the pad portion 31k and the seventh back surface portion 32g described above.

  The twelfth connecting portion 331 is arranged on the concave portion 26l. The twelfth connection part 331 has reached the main surface 23a. The twelfth connecting portion 331 is connected to the pad portion 31l and the eighth back surface portion 32h described above.

  In the cover 5 of the present embodiment, the third layer 53 is disposed on the main surface 51a, and the second layer 52 is disposed on the back surface 51b. Both end portions of the third layer 53 in the y direction are conductively joined to the pad portion 31i and the pad portion 31j by the conductive joining material 59, respectively. Further, both ends in the x direction of the third layer 53 are conductively connected to the pad portion 31k and the pad portion 31l by the conductive bonding material 59, respectively.

  FIG. 31 illustrates an example of a method for manufacturing the semiconductor light emitting device A2. In this example, a through hole 260k and a through hole 260l are formed in the base material 20 of the support 10. An eleventh connecting portion 330k is formed on the inner surface of the through hole 260k. A twelfth connecting portion 330l is formed on the inner surface of the through hole 260l. An annular portion 310k surrounding the through hole 260k and an annular portion 310l surrounding the through hole 260l are formed on the main surface 24a. When the support 10 is divided at the illustrated dividing line DL, the through-hole 260k and the eleventh connecting part 330k become the concave part 26k and the eleventh connecting part 33k, and the through-hole 260l and the twelfth connecting part 330l become the concave part 26l and the It becomes 12 connection parts 33l. The annular portion 310k becomes the pad portion 31k, and the annular portion 310l becomes the pad portion 31l. This manufacturing method is the same for the concave portions 26i and 26j, the ninth connecting portion 33i, the tenth connecting portion 33j, the pad portion 31i, and the pad portion 31j. Further, by cutting along the dividing line DL from the lower side to the right in the figure, the above-described protrusion 311k is formed.

  Further, a conductive bonding material 59 is provided so as to straddle the annular portion 310k and the third layer 53 of the cover 5. Further, a conductive bonding material 59 is provided so as to straddle the annular portion 310l and the third layer 53. The cover 5 may be joined to the main surface 23a using a joining material 57 made of, for example, resin.

  According to the present embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, as understood from the present embodiment, the third layer 53 may be provided on the main surface 51 a of the cover 5. In this case, the second layer 52 is provided on the back surface 51b, and the second layer 52 is not exposed to the outside. This is suitable for suppressing damage or the like of the second layer 52, and can exhibit the diffusion function for a longer period of time.

  32 to 34 illustrate the semiconductor light emitting device according to the third embodiment of the present disclosure. The semiconductor light emitting device A3 of the present embodiment is different from the above embodiment in the configuration of the support 1 and the cover 5.

  FIG. 32 is a plan view showing the semiconductor light emitting device A3. FIG. 33 is a sectional view taken along the line XXIX-XXIX in FIG. FIG. 34 is a fragmentary cross-sectional view showing one step of a method for manufacturing the semiconductor light emitting device A3.

  The substrate 2 of the present embodiment includes a first layer 21, a second layer 22, and a third layer 23. The main surface 23a of the third layer 23 is not covered by other portions of the base 2. The main surface 23a of the present embodiment corresponds to an example of the “second main surface” of the present disclosure.

  The back surface 51b of the first layer 51 of the cover 5 faces substantially all of the main surface 23a. In addition, the first surface 23c, the second surface 23d, the third surface 23e, and the fourth surface 23f of the base 2 coincide with the outer edges of the cover 5 when viewed in the z direction. Such a first surface 23c, a second surface 23d, a third surface 23e, and a fourth surface 23f correspond to “outer surfaces” of the present disclosure.

  In the present embodiment, the third layer 53 is disposed on the back surface 51b. The third layer 53 is electrically connected to the fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, and the eighth connecting portion 33h via a plurality of conductive bonding materials 58.

  As shown in FIG. 34, in an example of the method for manufacturing the semiconductor light emitting device A3, the support 10 having the base material 20 including the first layer 210, the second layer 220, and the third layer 230 is used. The cover material 50 is attached to the main surface 23a of the third layer 230. The cover material 50 is an intermediate material capable of forming a plurality of covers 5, and includes a first layer 510, a second layer 520, and a third layer 530. The first layer 510, the second layer 520, and the third layer 530 are divided along the division line DL, so that the first layer 510 becomes the first layer 51, the second layer 520 becomes the second layer 52, The third layer 530 becomes the third layer 53.

  According to the present embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, as understood from the present embodiment, the cover 5 is not limited to the one surrounded by a part of the base material 2. Since the base member 2 of the present embodiment does not have a portion surrounding the cover 5, it is advantageous for miniaturization.

<Fourth embodiment>
35 to 42 show the semiconductor light emitting device according to the fourth embodiment of the present disclosure. The semiconductor light emitting device A4 of the present embodiment is different from the above embodiment mainly in the configuration of the support 1.

  FIG. 35 is a main part plan view showing the semiconductor light emitting device A4. FIG. 36 is a bottom view showing the semiconductor light emitting device A4. FIG. 37 is a sectional view taken along the line XXXVII-XXXVII in FIG. FIG. 38 is a sectional view taken along the line XXXVIII-XXXVIII in FIG. FIG. 39 is a plan view showing a base material of the semiconductor light emitting device A4. FIG. 40 is a plan view showing a base material of the semiconductor light emitting device A4. FIG. 41 is a plan view showing a base material of the semiconductor light emitting device A4. FIG. 42 is a plan view showing a base material of the semiconductor light emitting device A4. FIG. 43 is a cross-sectional view of a main part along a line XLIII-XLIII in FIG. 42.

  As shown in FIG. 37, the base material 2 of the support 1 includes a first layer 21, a second layer 22, a third layer 23, and a fourth layer 24.

  As shown in FIG. 42, the first layer 21 of the present embodiment has a recess 216a, a recess 216b, a recess 216c, and a recess 216d. The concave portion 216a is interposed between the first surface 21c and the third surface 21e, and is, for example, a concave curved surface along the z direction. The concave portion 216b is interposed between the second surface 21d and the fourth surface 21f, and is, for example, a concave curved surface along the z direction. The concave portion 216c is interposed between the first surface 21c and the fourth surface 21f, and is, for example, a concave curved surface along the z direction. The concave portion 216d is interposed between the fourth surface 21f and the third surface 21e, and is, for example, a concave curved surface along the z direction.

  As shown in FIG. 41, the second layer 22 of the present embodiment has a recess 226a, a recess 226b, a recess 226c, and a recess 226d. The concave portion 226a is interposed between the first surface 22c and the third surface 22e, and is, for example, a concave curved surface along the z direction. The concave portion 226b is interposed between the second surface 22d and the fourth surface 22f, and is, for example, a concave curved surface along the z direction. The concave portion 226c is interposed between the first surface 22c and the fourth surface 22f, and is, for example, a concave curved surface along the z direction. The concave portion 226d is interposed between the fourth surface 22f and the third surface 22e, and is, for example, a concave curved surface along the z direction.

  As shown in FIG. 40, the third layer 23 of the present embodiment has a concave portion 236a, a concave portion 236b, a concave portion 236c, and a concave portion 236d. The concave portion 236a is interposed between the first surface 23c and the third surface 23e, and is, for example, a concave curved surface along the z direction. The concave portion 236b is interposed between the second surface 23d and the fourth surface 23f, and is, for example, a concave curved surface along the z direction. The concave portion 236c is interposed between the first surface 23c and the fourth surface 23f, and is, for example, a concave curved surface along the z direction. The concave portion 236d is interposed between the fourth surface 23f and the third surface 23e, and is, for example, a concave curved surface along the z direction.

  As shown in FIG. 39, the fourth layer 24 of the present embodiment has a concave portion 246a, a concave portion 246b, a concave portion 246c, and a concave portion 246d. The concave portion 246a is interposed between the first surface 24c and the third surface 24e, and is, for example, a concave curved surface along the z direction. The concave portion 246b is interposed between the second surface 24d and the fourth surface 24f, and is, for example, a concave curved surface along the z direction. The concave portion 246c is interposed between the first surface 24c and the fourth surface 24f, and is, for example, a concave curved surface along the z direction. The concave portion 246d is interposed between the fourth surface 24f and the third surface 24e, and is, for example, a concave curved surface along the z direction.

  As shown in FIGS. 38 and 42, the conductive portion 3 includes a first main surface portion 35a, a second main surface portion 35b, a third main surface portion 35c, a fourth main surface portion 35d, a pad portion 31e, a pad portion 31f, and a pad portion 31g. And a pad portion 31h. The first main surface portion 35a, the second main surface portion 35b, the third main surface portion 35c, the fourth main surface portion 35d, the pad portion 31e, the pad portions 31f, 31g, and the pad portion 31h are arranged on the main surface 24a.

  The first main surface portion 35a of the present embodiment has a first side 3501a, a second side 3502a, a third side 3503a, a fourth side 3504a, a fifth side 3505a, a sixth side 3506a, and a seventh side 3507a. The first side 3501a is a side extending in the x direction. The second side 3502a is a side extending in the x direction, and is located closer to the second surface 21d in the y direction than the first side 3501a. The third side 3503a extends in the y direction and is located between the first side 3501a and the second side 3502a. The fourth side 3504a extends in the y direction and is located between the first side 3501a and the second side 3502a. Further, the fourth side 3504a is located closer to the fourth surface 21f in the x direction than the third side 3503a. The fifth side 3505a is concave from the first side 3501a toward the second side 3502a in the y direction and has a curved shape. The seventh side 3507a is interposed between the second side 3502a and the third side 3503a, and has a curved shape depressed on the fourth side 3504a side in the x direction and on the first side 3501a side in the y direction.

  The second main surface 35b of the present embodiment has a first side 3501b, a second side 3502b, a third side 3503b, a fourth side 3504b, a fifth side 3505b, and a sixth side 3506b. The first side 3501b is a side extending in the x direction. The second side 3502b is a side extending in the x direction, and is located closer to the second surface 21d in the y direction than the first side 3501b. The third side 3503b extends in the y direction and is located between the first side 3501b and the second side 3502b. The fourth side 3504b extends in the y direction and is located between the first side 3501b and the second side 3502b. Further, the fourth side 3504b is located closer to the fourth surface 21f in the x direction than the third side 3503b. The fifth side 3505b is interposed between the second side 3502b and the third side 3503b, and is inclined with respect to the x direction and the y direction. The sixth side 3506b is interposed between the first side 3501b and the fourth side 3504b, and is inclined with respect to the x direction and the y direction.

  The third main surface portion 35c of the present embodiment has a first side 3501c, a second side 3502c, a third side 3503c, a fourth side 3504c, and a fifth side 3505c. The first side 3501c is a side extending in the x direction. The second side 3502c is a side extending in the x direction, and is located closer to the second surface 21d in the y direction than the first side 3501c. The third side 3503c extends in the y direction and is located between the first side 3501c and the second side 3502c. The fourth side 3504c extends in the y direction and is located between the first side 3501c and the second side 3502c. Further, the fourth side 3504c is located closer to the fourth surface 21f in the x direction than the third side 3503c. The fifth side 3505c is interposed between the second side 3502c and the fourth side 3504c, and is inclined with respect to the x direction and the y direction.

  The fourth main surface portion 35d of the present embodiment has a first side 3501d, a second side 3502d, a third side 3503d, a fourth side 3504d, and a fifth side 3505d. The first side 3501d is a side extending in the x direction. The second side 3502d is a side extending in the x direction, and is located closer to the second surface 21d in the y direction than the first side 3501d. The third side 3503d extends in the y direction and is located between the first side 3501d and the second side 3502d. The fourth side 3504d extends in the y direction and is located between the first side 3501d and the second side 3502d. In addition, the fourth side 3504d is located on the fourth surface 21f side in the x direction with respect to the third side 3503d. The fifth side 3505d is interposed between the second side 3502d and the fourth side 3504d, and is inclined with respect to the x direction and the y direction.

  The pad portion 31e is arranged between the first main surface portion 35a and the first surface 21c in the y direction. The pad portion 31e overlaps the first main surface portion 35a when viewed in the y direction. The pad portion 31e has, for example, a circular shape. The pad portion 31e overlaps the fifth side 3505a when viewed in the y direction.

  The pad portion 31f is arranged between the second main surface portion 35b and the fourth main surface portion 35d and the second surface 21d in the y direction. The pad portion 31f overlaps with each of the second main surface portion 35b and a part of the fourth main surface portion 35d as viewed in the y direction. The pad portion 31e has, for example, a circular shape. The pad portion 31f faces the fifth side 3505b and the fifth side 3505d.

  The pad portion 31g is arranged between the first main surface portion 35a and the third surface 21e in the x direction and functions as a channel. The pad portion 31g overlaps a part of the first main surface portion 35a when viewed in the x direction. The pad portion 31g overlaps the seventh side 3507a when viewed in the x direction.

  The pad portion 31h is disposed between the second main surface portion 35b, the third main surface portion 35c, and the fourth surface 21f in the x direction. The pad portion 31h overlaps with each of the second main surface portion 35b and a part of the third main surface portion 35c when viewed in the x direction. The pad portion 31h faces the sixth side 3506b and the fifth side 3505c.

  Conductive portion 3 further includes extending portions 351a, 352a, 351b, 352b, 351c, 351d, 352d, 311e, 312e, 313e, 311f, 311g, 311h, and 312h arranged on main surface 21a.

  The extension 351a extends from the first main surface 35a toward the recess 216a in a direction inclined with respect to the x direction and the y direction. The extension 351a is connected to the first main surface 35a, and reaches the recess 216a. The extension 352a extends in the x direction from the first main surface 35a toward the third surface 21e. The extension 352a is connected to the first main surface 35a and reaches the third surface 21e.

  The extension 351b extends from the second main surface 35b toward the recess 216b in a direction inclined with respect to the x direction and the y direction. The extension 351b is connected to the second main surface 35b, and reaches the recess 216b. The extension 352b extends in the y direction from the second main surface 35b toward the second surface 21d. The extension 352b is connected to the second main surface 35b and reaches the second surface 21d.

  The extension 351c extends from the third main surface 35c toward the recess 216c in a direction inclined with respect to the x direction and the y direction. The extension 351c is connected to the third main surface 35c, and reaches the recess 216c.

  The extension 351d extends from the fourth main surface 35d toward the recess 216d in a direction inclined with respect to the x direction and the y direction. The extension 351d is connected to the fourth main surface 35d, and reaches the recess 216d. The extension 352d extends in the y-direction from the fourth main surface 35d toward the second surface 21d. The extension 352d is connected to the fourth main surface 35d and reaches the second surface 21d.

  The extension 311e extends in the y direction from the pad 31e toward the first surface 21c. The extension 311e is connected to the pad 31e and reaches the first surface 21c. The extension 312e extends from the pad 31e toward the first surface 21c. The extension 312e is connected to the pad 31e and reaches the first surface 21c. The extending portion 312e extends from the pad portion 31e to the third surface 21e along the x direction, a portion extending obliquely from the portion, and extends from the portion toward the first surface 21c along the y direction. And a part. The extension 313e extends from the pad 31e toward the first surface 21c. The extension part 313e is connected to the pad part 31e, and has reached the first surface 21c. The extending portion 313e extends from the pad portion 31e along the x direction toward the fourth surface 21f, a portion extending obliquely from the portion, and extends from the portion toward the first surface 21c along the y direction. And a part.

  The extension 311f extends in the y direction from the pad 31f toward the second surface 21d. The extension 311f is connected to the pad 31f and reaches the second surface 21d.

  The extension 311g extends in the x-direction from the pad 31g toward the third surface 21e. The extension 311g is connected to the pad 31g, and reaches the third surface 21e.

  The extension 311h extends in the x direction from the pad 31h toward the fourth surface 21f. The extension 311h is connected to the pad 31h and reaches the fourth surface 21f. The extension 312h extends from the pad 31h toward the fourth surface 21f. The extension 312h is connected to the pad 31h, and has reached the fourth surface 21f. The extending portion 312h extends from the pad portion 31h toward the first surface 21c along the y direction, a portion obliquely extending from the portion, and extends from the portion toward the fourth surface 21f along the x direction. And a part.

  As shown in FIG. 36, the conductive portion 3 includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, a fourth back surface portion 32d, a fifth back surface portion 32e, a sixth back surface portion 32f, and a seventh back surface portion. It includes a back surface portion 32g and an eighth back surface portion 32h. The first back surface 32a, the second back surface 32b, the third back surface 32c, the fourth back surface 32d, the fifth back surface 32e, the sixth back surface 32f, the seventh back surface 32g, and the eighth back surface 32h 21b.

  The first back surface portion 32a is provided along the first surface 21c and the third surface 21e when viewed in the z direction, and overlaps with the first main surface portion 35a and the extended portion 351a when viewed in the z direction. The second back surface portion 32b is provided along the second surface 21d and the fourth surface 21f when viewed in the z direction, and overlaps with the extension 351b when viewed in the z direction. The second back surface part 32b has a hypotenuse 3201b. The oblique side 3201b is inclined with respect to the x direction and the y direction, and is located on the opposite side to the concave portion 216b.

  The third back surface portion 32c is provided along the first surface 21c and the fourth surface 21f when viewed in the z direction, and overlaps with the third main surface portions 35c and 351c when viewed in the z direction. The fourth back surface portion 32d is provided along the second surface 21d and the third surface 21e when viewed in the z direction, and overlaps the fourth main surface portion 35d and the extending portion 351d when viewed in the z direction.

  The fifth back surface portion 32e is provided along the first surface 21c when viewed in the z direction, and is located between the first back surface portion 32a and the third back surface portion 32c in the x direction. The fifth back surface portion 32e overlaps with the pad portion 31e when viewed in the z direction.

  The sixth back surface portion 32f is provided along the second surface 21d when viewed in the z direction, and is located between the second back surface portion 32b and the fourth back surface portion 32d in the x direction. The sixth back surface portion 32f overlaps the pad portion 31f when viewed in the z direction.

  The seventh back surface portion 32g is provided along the third surface 21e when viewed in the z direction, and is located between the first back surface portion 32a and the fourth back surface portion 32d in the y direction. The seventh back surface portion 32g overlaps with the pad portion 31g as viewed in the z direction.

  The eighth back surface portion 32h is provided along the fourth surface 21f when viewed in the z direction, and is located between the second back surface portion 32b and the third back surface portion 32c in the y direction.

  The conductive portion 3 further includes an extension 321a, an extension 321b, an extension 321c, and an extension 321d. The extension 321a, the extension 321b, the extension 321c, and the extension 321d are disposed on the back surface 21b.

  The extension 321a extends from the first back surface 32a toward the recess 216a. The extension portion 321a is connected to the first back surface portion 32a and reaches the concave portion 216a. The extension 321b extends from the second back surface 32b toward the recess 216b. The extension portion 321b is connected to the second back surface portion 32b and reaches the concave portion 216b. The extension 321c extends from the third back surface 32c toward the recess 216c. The extension portion 321c is connected to the third back surface portion 32c and reaches the concave portion 216c. The extension 321d extends from the fourth back surface 32d toward the recess 216d. The extension 321d is connected to the fourth back surface 32d and reaches the recess 216d.

  The preparation and conductive unit 3 shown in FIGS. 36 and 42 further include a communication unit 331a, a communication unit 331b, a communication unit 331c, a communication unit 331d, a communication unit 331e, a communication unit 331f, a communication unit 331g, and a communication unit 331h.

  As shown in FIG. 43, the connecting portion 331a is arranged on the concave portion 216a, and reaches the main surface 21a and the back surface 21b in the z direction. The communication part 331a is connected to the extension part 351a and the extension part 321a. The connecting portion 331b is arranged on the concave portion 216b, and reaches the main surface 21a and the back surface 21b in the z direction. The communication part 331b is connected to the extension part 351b and the extension part 321b. The connecting portion 331c is arranged on the concave portion 216c, and reaches the main surface 21a and the back surface 21b in the z direction. The communication part 331c is connected to the extension part 351c and the extension part 321c. The connecting portion 331d is arranged on the concave portion 216d, and reaches the main surface 21a and the back surface 21b in the z direction. The connection part 331d is connected to the extension part 351d and the extension part 321d.

  The communication portion 331e penetrates the first layer 21 in the z direction, and reaches the main surface 21a and the back surface 21b. The contact portion 331e overlaps the pad portion 31e and the fifth back surface portion 32e when viewed in the z direction. The connecting portion 331e is connected to the pad portion 31e and the fifth back surface portion 32e.

  The connecting portion 331f penetrates the first layer 21 in the z direction, and reaches the main surface 21a and the back surface 21b. The contact portion 331f overlaps the pad portion 31f and the sixth back surface portion 32f when viewed in the z direction. The connecting portion 331f is connected to the pad portion 31f and the sixth back surface portion 32f.

  The connecting portion 331g penetrates the first layer 21 in the z direction and reaches the main surface 21a and the back surface 21b. The connecting portion 331g overlaps with the pad portion 31g and the seventh back surface portion 32g as viewed in the z direction. The connecting portion 331g is connected to the pad portion 31g and the seventh back surface portion 32g.

  The connecting portion 331h penetrates the first layer 21 in the z direction, and reaches the main surface 21a and the back surface 21b. The connecting portion 331h overlaps the pad portion 31h and the eighth back surface portion 32h when viewed in the z direction. The connecting portion 331h is connected to the pad portion 31h and the eighth back surface portion 32h.

  As shown in FIG. 41, the conductive portion 3 includes a pad portion 36e, a pad portion 36f, a pad portion 36g, and a pad portion 36h. The pad 36e, the pad 36f, the pad 36g, and the pad 36h are arranged on the main surface 22a. Pad portion 36e, pad portion 36f, pad portion 36g, and pad portion 36h are, for example, circular.

  The pad portion 36e is arranged between the first surface 22c and the fifth surface 22g. The pad portion 36e is located substantially at the center of the second layer 22 in the x direction. The pad portion 36f is arranged between the second surface 22d and the sixth surface 22h. The pad portion 36f is located substantially at the center of the second layer 22 in the x direction. The pad portion 36g is disposed between the third surface 22e and the seventh surface 22i. The pad portion 36g is located substantially at the center of the second layer 22 in the x direction. The pad portion 36h is arranged between the fourth surface 22f and the eighth surface 22j. The pad portion 36h is located substantially at the center of the second layer 22 in the x direction.

  The conductive unit 3 further includes a communication unit 332e, a communication unit 332f, a communication unit 332g, and a communication unit 332h.

  The connecting portion 332e penetrates through the second layer 22 in the z direction, and is connected to the pad portion 36e. The connecting portion 332f penetrates through the second layer 22 in the z direction, and is connected to the pad portion 36f. The connecting portion 332g penetrates through the second layer 22 in the z direction, and is connected to the pad portion 36g. The connecting portion 332h penetrates through the second layer 22 in the z direction, and is connected to the pad portion 36h. In addition, the contact portion 332e is in contact with the pad portion 31e. The contact portion 332f is in contact with the pad portion 31f. The connecting portion 332g is connected to the pad portion 31g. The communication section 332h is connected to the pad section 31h.

  As shown in FIG. 40, the conductive portion 3 includes a pad portion 37e, a pad portion 37f, a pad portion 37g, a pad portion 37h, a pad portion 372e, a pad portion 372f, a pad portion 372g, a pad portion 372h, an extension portion 371e, and an extension portion. An extension 371f, an extension 371g, and an extension 371h are included. Pad 37e, pad 37f, pad 37g, pad 37h, pad 372e, pad 372f, pad 372g, pad 372h, extension 371e, extension 371f, extension 371g, and extension 371h is arranged on main surface 23a.

  The pad portion 37e is arranged along the first surface 23c and the fourth surface 23f. The pad portion 37e has a first side 3701e and a second side 3702e. The first side 3701e is located on the fifth surface 23g and the eighth surface 23j, and is, for example, a concave curve. The second side 3702e is located on the first surface 23c and the fourth surface 23f side, and is, for example, a concave curve. The second side 3702e faces the recess 236c when viewed in the z direction.

  The pad portion 37f is arranged along the second surface 23d and the third surface 23e. The pad portion 37f has a first side 3701f and a second side 3702f. The first side 3701f is located on the side of the seventh surface 23i and the sixth surface 23h, and is, for example, a concave curve. The second side 3702f is located on the side of the second surface 23d and the third surface 23e, and is, for example, a concave curve. The second side 3702f faces the recess 236d when viewed in the z direction.

  The pad portion 37g is arranged along the first surface 23c and the third surface 23e. The pad portion 37g has a first side 3701g and a second side 3702g. First side 3701g is located on the side of fifth surface 23g and seventh surface 23i, and is, for example, a concave curve. The second side 3702g is located on the side of the first surface 23c and the third surface 23e, and is, for example, a concave curve. The second side 3702g faces the recess 236a when viewed in the z direction.

  The pad portion 37h is arranged along the second surface 23d and the fourth surface 23f. The pad portion 37h has a first side 3701h and a second side 3702h. The first side 3701h is located on the side of the sixth surface 23h and the eighth surface 23j, and is, for example, a concave curve. The second side 3702h is located on the side of the second surface 23d and the fourth surface 23f, and is, for example, a concave curve. The second side 3702h faces the recess 236b when viewed in the z direction.

  The pad portion 372e is in contact with the fifth surface 23g, and extends in the y direction toward the first surface 23c. The pad portion 372e is, for example, rectangular. The pad portion 372e is located substantially at the center of the third layer 23 in the x direction.

  The pad portion 372f is in contact with the fourth surface 23f and extends toward the second surface 23d in the y direction. Pad portion 372f is, for example, rectangular. The pad portion 372f is located substantially at the center of the third layer 23 in the x direction.

  The pad portion 372g is in contact with the seventh surface 23i and extends toward the third surface 23e in the x direction. The pad portion 372g has a rectangular shape, for example. The pad portion 372g is located substantially at the center of the third layer 23 in the y direction.

  The pad portion 372h is in contact with the eighth surface 23j and extends toward the fourth surface 23f in the x direction. The pad portion 372h is, for example, rectangular. The pad portion 372h is located substantially at the center of the third layer 23 in the y direction.

  The extension 371e connects the pad 37e and the pad 372e. The extension 371e is a band extending in the x direction.

  The extension 371f connects the pad 37f and the pad 372f. The extension 371f is a band extending in the x direction.

  The extension 371g connects the pad 37g and the pad 372g. The extension 371g is a band extending in the y direction.

  The extension 371h connects the pad 37h and the pad 372h. The extension 371h is a band extending in the y direction.

  The conductive unit 3 further includes a communication unit 333e, a communication unit 333f, a communication unit 333g, and a communication unit 333h.

  The connecting portion 333e penetrates the third layer 23 in the z direction. The contact portion 333e overlaps with the pad portion 372e as viewed in the z direction, and is connected to the pad portion 372e. The contact portion 333e is in contact with the pad portion 36e.

  The connecting portion 333f penetrates the third layer 23 in the z direction. The contact portion 333f overlaps with the pad portion 372f when viewed in the z direction, and is connected to the pad portion 372f. The contact portion 333f is in contact with the pad portion 36f.

  The connection portion 333g penetrates the third layer 23 in the z direction. The connecting portion 333g overlaps with the pad portion 372g when viewed in the z direction, and is connected to the pad portion 372g. The contact portion 333g is in contact with the pad portion 36g.

  The connection portion 333h penetrates the third layer 23 in the z direction. The connecting portion 333h overlaps with the pad portion 372h when viewed in the z direction, and is connected to the pad portion 372h. The contact portion 333h is in contact with the pad portion 36h.

  As shown in FIG. 39, the conductive portion 3 includes a pad portion 38e, a pad portion 38f, a pad portion 38g, a pad portion 38h, a pad portion 382e, a pad portion 382f, a pad portion 382g, a pad portion 382h, an extension portion 381e, and an extension portion. An extension 381f, an extension 381g, and an extension 381h are included. Pad 38e, pad 38f, pad 38g, pad 38h, pad 382e, pad 382f, pad 382g, pad 382h, extension 381e, extension 381f, extension 381g, and extension 381h is arranged on the main surface 24a.

  The pad portion 38e is arranged along the first surface 24c and the fourth surface 24f. The pad portion 38e has a first side 3801e and a second side 3802e. The first side 3801e is located on the side of the fifth surface 24g and the eighth surface 24j, and is, for example, a concave curve. The second side 3802e is located on the first surface 24c and the fourth surface 24f side, and is, for example, a concave curve. The second side 3802e faces the recess 246c when viewed in the z direction.

  The pad portion 38f is arranged along the second surface 24d and the third surface 24e. The pad section 38f has a first side 3801f and a second side 3802f. The first side 3801f is located on the seventh surface 24i and the sixth surface 24h, and is, for example, a concave curve. The second side 3802f is located on the side of the second surface 24d and the third surface 24e, and is, for example, a concave curve. The second side 3802f faces the recess 246d when viewed in the z direction.

  The pad portion 38g is arranged along the first surface 24c and the third surface 24e. The pad portion 38g has a first side 3801g and a second side 3802g. The first side 3801g is located on the fifth surface 24g and the seventh surface 24i, and is, for example, a concave curve. The second side 3802g is located on the first surface 24c and the third surface 24e side, and is, for example, a concave curve. The second side 3802g faces the recess 246a when viewed in the z direction.

  The pad portion 38h is arranged along the second surface 24d and the fourth surface 24f. The pad portion 38h has a first side 3801h and a second side 3802h. The first side 3801h is located on the side of the sixth surface 24h and the eighth surface 24j, and is, for example, a concave curve. The second side 3802h is located on the side of the second surface 24d and the fourth surface 24f, and is, for example, a concave curve. The second side 3802h faces the recess 246b when viewed in the z direction.

  The pad portion 382e is in contact with the fifth surface 24g and the first surface 24c. The pad portion 382e has, for example, a rectangular shape with a portion cut away. The pad portion 382e is located substantially at the center of the fourth layer 24 in the x direction.

  The pad portion 382f is in contact with the fourth surface 24f and the eighth surface 24j. Pad portion 382f is, for example, rectangular. The pad portion 382f is located substantially at the center of the fourth layer 24 in the x direction.

  The pad portion 382g is in contact with the seventh surface 24i and the third surface 24e. Pad portion 382g is, for example, rectangular. The pad portion 382g is located substantially at the center of the fourth layer 24 in the y direction.

  The pad portion 382h is in contact with the eighth surface 24j and the fourth surface 24f. Pad portion 382h is, for example, rectangular. The pad portion 382h is located substantially at the center of the fourth layer 24 in the y direction.

  The extension 381e connects the pad 38e and the pad 382e. The extension portion 381e is a band extending in the x direction.

  The extension 381f connects the pad 38f and the pad 382f. The extension 381f is a band extending in the x direction.

  The extension 381g connects the pad 38g and the pad 382g. The extension 381g is a band extending in the y direction.

  The extension 381h connects the pad 38h and the pad 382h. The extending portion 381h is a band extending in the y direction.

  The conductive unit 3 further includes a communication unit 333e, a communication unit 333f, a communication unit 333g, and a communication unit 333h.

  The connection portion 334e penetrates the third layer 23 in the z direction. The connecting portion 334e overlaps with the pad portion 38e when viewed in the z direction, and is connected to the pad portion 38e. The communication part 334e is in contact with the pad part 37e.

  The connecting portion 334f penetrates the third layer 23 in the z direction. The connecting portion 334f overlaps with the pad portion 38f when viewed in the z direction, and is connected to the pad portion 38f. The contact portion 334f is in contact with the pad portion 37f.

  The connection portion 334g penetrates the third layer 23 in the z direction. The connecting portion 334g overlaps with the pad portion 38g when viewed in the z direction, and is connected to the pad portion 38g. The contact part 334g is in contact with the pad part 37g.

  The connection portion 334h penetrates the third layer 23 in the z direction. The contact portion 334h overlaps with the pad portion 38h when viewed in the z direction, and is connected to the pad portion 38h. The communication part 334h is in contact with the pad part 37h.

  In the support 1 of the present embodiment, the first main surface portion 35a and the first back surface portion 32a are electrically connected via the extension 351a, the connecting portion 331a, and the extension 321a. The second main surface portion 35b and the second back surface portion 32b are electrically connected via the extension 351b, the connection portion 331b, and the extension 321b. The third main surface portion 35c and the third back surface portion 32c are electrically connected via the extension 351c, the connecting portion 331c, and the extension 321c. The fourth main surface portion 35d and the fourth back surface portion 32d are electrically connected via the extension 351d, the connection portion 331d, and the extension 321d.

  In the support 1 of the present embodiment, the pad portion 382e and the fifth back surface portion 32e are connected to the main surface portion 318e, the pad portion 38e, the contact portion 334e, the pad portion 37e, the extension portion 371e, the pad portion 372e, and the contact portion. Conduction is performed via the portion 333e, the pad portion 36e, the communication portion 332e, the pad portion 31e, and the communication portion 331e. The pad portion 382f and the sixth back surface portion 32f form a main surface portion 318f, a pad portion 38f, a communication portion 334f, a pad portion 37f, an extension portion 371f, a pad portion 372f, a connection portion 333f, a pad portion 36f, a communication portion 332f, and a pad. Conduction is performed through the portion 31f and the communication portion 331f. The pad portion 382g and the seventh back surface portion 32g form a main surface portion 318g, a pad portion 38g, a connection portion 334g, a pad portion 37g, an extension portion 371g, a pad portion 372g, a connection portion 333g, a pad portion 36g, a connection portion 332g, and a pad. The connection is made through the portion 31g and the communication portion 331g. The pad portion 382h and the eighth back surface portion 32h form a main surface portion 318h, a pad portion 38h, a communication portion 334h, a pad portion 37h, an extension portion 371h, a pad portion 372h, a connection portion 333h, a pad portion 36h, a communication portion 332h, and a pad. Conduction is performed via the portion 31h and the communication portion 331h.

  As shown in FIGS. 35 and 37, the cover 5 is supported on the main surface 23a of the third layer 23, and has a fifth surface 24g, a sixth surface 24h, a seventh surface 24i, and an eighth surface as viewed in the z direction. 24j. In the cover 5 of the present embodiment, the third layer 53 is formed on the main surface 51a of the first layer 51 of the cover 5, and the second layer 52 is formed on the back surface 51b. In the illustrated example, the back surface 51b (the second layer 52) is joined to the main surface 23a by a joining material 57, for example. By arranging the bonding material 57 in a plurality of points, a gap is generated between the cover 5 and the third layer 23 at a position where the bonding material 57 is not provided. This gap can perform the same function as the above-described ventilation section 6. For this reason, in this example, the support 1 does not need to be provided with the ventilation section 6.

  The third layer 53 of the cover 5 and the pad portion 382e are electrically connected via the conductive bonding material 59. The third layer 53 and the pad portion 382f are electrically connected via the conductive bonding material 59. The third layer 53 and the pad portion 382g are electrically connected via the conductive bonding material 59. The third layer 53 and the pad portion 382h are electrically connected via the conductive bonding material 59.

  According to the present embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed.

<Fourth Embodiment First Modification>
44 to 46 show a first modified example of the semiconductor light emitting device A4. The semiconductor light emitting device A41 of this modification is different from the above-described semiconductor light emitting device A4 mainly in the configuration of the support 1 and the conduction state of the cover 5 and the conductive portion 3.

  FIG. 44 is a plan view of relevant parts showing the semiconductor light emitting device A41. FIG. 45 is a sectional view taken along the line XLV-XLV in FIG. FIG. 46 is a plan view showing the base 2 of the semiconductor light emitting device A41.

  As shown in FIG. 44, in the semiconductor light emitting device A41, the conductive portion 3 is not provided on the fourth layer 24. Further, as shown in FIG. 45, the second layer 52 is provided on the main surface 51a of the first layer 51, and the third layer 53 is provided on the back surface 51b. The third layer 53 is electrically connected to the pad 372e, the pad 372f, the pad 372g, and the pad 372h via the conductive bonding material 59. When an isotropic conductive material such as a paste containing a metal such as Ag or solder is used as the conductive bonding material 59, the 59 bonded to the pad portions 372e, 372f, 372g, and 372h is used. Separate each. A gap may be formed between the conductive bonding material 59 and the cover 5 and the main surface 23a. This gap can perform the same function as the above-described ventilation section 6. For this reason, in this example, the support 1 does not need to be provided with the ventilation section 6. The conduction paths between the pad portion 372e, the pad portion 372f, the pad portion 372g, and the pad portion 372h and the fifth back surface portion 32e, the sixth back surface portion 32f, the seventh back surface portion 32g, and the eighth back surface portion 32h are, for example, semiconductors. This is the same as the light emitting device A4.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed.

<Fourth Embodiment Second Modification>
FIG. 47 shows the first layer 21 of the second modification of the semiconductor light emitting device A4. In this example, the conductive part 3 includes a plurality of connecting parts 330a. Each of the plurality of connecting portions 330a penetrates the first layer 21 in the z direction. The plurality of connecting portions 330a overlap with both the first main surface portion 35a and the first back surface portion 32a when viewed in the z direction, and are connected to both.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. Further, by providing the plurality of connecting portions 330a, it is possible to reduce the resistance of the conduction path to the semiconductor light emitting element 4 mounted on the first main surface portion 35a. In addition, heat generated from the semiconductor light emitting element 4 can be more smoothly transmitted to the first back surface portion 32a through the communication portion 330a, and heat radiation can be promoted.

<Fifth embodiment>
48 to 50 show a semiconductor light emitting device according to a fifth embodiment of the present disclosure. The semiconductor light emitting device A5 of the present embodiment is different from the above embodiment mainly in the configuration of the substrate 2 and the semiconductor light emitting element 4.

  FIG. 48 is a plan view of relevant parts showing the semiconductor light emitting device A5. FIG. 49 is a sectional view taken along the line XLIX-XLIX of FIG. FIG. 50 is a cross-sectional view of FIG. 48 taken along the line LL.

The semiconductor light emitting device 4 of the present embodiment emits light in the x direction. Such a semiconductor light emitting device 4 is, for example, a semiconductor laser device. Further, the semiconductor light emitting element 4 is mounted on the submount substrate 45. A typical example of the submount substrate 45 is a substrate made of ceramics such as Al ₂ O ₃ and AlN.

  The support 1 is made of, for example, a MID (Molded Interconnect Device). In this case, the substrate 2 is made of an insulating resin. The conductive part 3 is made of a metal film formed on the base material 2.

  The base material 2 of the present embodiment includes a main surface 2a, a back surface 2b, a first surface 2c, a second surface 2d, a third surface 2e, a fourth surface 2f, a fifth surface 2g, a sixth surface 2h, and a seventh surface 2i. , An eighth surface 2j and a ninth surface 2k.

  The main surface 2a and the back surface 2b face opposite sides in the z direction. The main surface 2a of the present embodiment corresponds to an example of the “first main surface” of the present disclosure. The ninth surface 2k faces the same side as the main surface 2a in the z direction. The ninth surface 2k is farther away from the back surface 2b than the main surface 2a in the z direction. The ninth surface 2k of the present embodiment corresponds to an example of the “second main surface” of the present disclosure.

  The first surface 2c and the second surface 2d face opposite sides in the y direction. The first surface 2c is located between the ninth surface 2k and the back surface 2b in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the back surface 2b. The second surface 2d is located between the ninth surface 2k and the back surface 2b in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the back surface 2b.

  The third surface 2e and the fourth surface 2f face opposite sides in the x direction. The third surface 2e is located between the ninth surface 2k and the back surface 2b in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the back surface 2b. The fourth surface 2f is located between the ninth surface 2k and the back surface 2b in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the back surface 2b.

  The fifth surface 2g and the sixth surface 2h are located between the first surface 2c and the second surface 2d in the y direction. The fifth surface 2g and the sixth surface 2h face opposite sides in the y direction. The fifth surface 2g faces the same side as the second surface 2d. The sixth surface 2h faces the same side as the first surface 2c. The fifth surface 2g is located between the ninth surface 2k and the main surface 2a in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the main surface 2a. The sixth surface 2h is located between the ninth surface 2k and the main surface 2a in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the main surface 2a.

  The seventh surface 2i and the eighth surface 2j are located between the third surface 2e and the fourth surface 2f in the x direction. The seventh surface 2i and the eighth surface 2j face opposite sides in the x direction. The seventh surface 2i faces the same side as the fourth surface 2f. The eighth surface 2j faces the same side as the third surface 2e. The seventh surface 2i is located between the ninth surface 2k and the main surface 2a in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the main surface 2a. The eighth surface 2j is located between the ninth surface 2k and the main surface 2a in the z direction, and in the illustrated example, is connected to the ninth surface 2k and the main surface 2a. The seventh surface 2i is inclined with respect to the z direction. The angle formed by the seventh surface 2i with the z direction is, for example, 30 ° to 60 °, and more specifically, approximately 45 °.

  The conductive part 3 is formed on the surface of the base material 2 and is made of an electroless plating layer of, for example, Cu, Ni, Au or the like. The conductive portion 3 of the present embodiment includes a main surface portion 31, a back surface portion 32, a connecting portion 33, a seventh surface portion 34i, and an eighth surface portion 34j.

  The main surface portion 31 includes a first main surface portion 31a and a second main surface portion 31b, and the first main surface portion 31a and the second main surface portion 31b are arranged on the main surface 2a. The first main surface portion 31a is in contact with the seventh surface 2i. The second main surface portion 31b is in contact with the eighth surface 2j.

  The back surface portion 32 includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, and a fourth back surface portion 32d, and is disposed on the back surface 2b. The first back surface portion 32a is in contact with the third surface 2e. The second back surface portion 32b is in contact with the fourth surface 2f. The third back surface portion 32c is in contact with the first surface 2c. The fourth back surface portion 32d is in contact with the second surface 2d.

  The communication unit 33 includes a thirteenth communication unit 33m, a fourteenth communication unit 33n, a fifteenth communication unit 33o, a sixteenth communication unit 33p, a seventeenth communication unit 33q, an eighteenth communication unit 33r, a nineteenth communication unit 33s, and a twentieth communication. Part 33t.

  The thirteenth connection part 33m, the fourteenth connection part 33n, the fifteenth connection part 33o, and the sixteenth connection part 33p are arranged on the ninth surface 2k. The thirteenth connection portion 33m is in contact with the first surface 2c and the fifth surface 2g. The fourteenth connection part 33n is in contact with the second surface 2d and the sixth surface 2h. The fifteenth connection part 33o is in contact with the seventh surface 2i and the third surface 2e. The sixteenth connection part 33p is in contact with the fourth surface 2f and the eighth surface 2j.

  The seventeenth connection part 33q is arranged on the first surface 2c, and is connected to the thirteenth connection part 33m and the third back surface part 32c. The eighteenth connection part 33r is arranged on the second surface 2d, and is connected to the fourteenth connection part 33n and the fourth back surface part 32d.

  The nineteenth connection part 33s is arranged on the third surface 2e, and is connected to the fifteenth connection part 33o and the first back surface part 32a. The twentieth connecting portion 33t is arranged on the fourth surface 2f, and is connected to the sixteenth connecting portion 33p and the second back surface portion 32b.

  The cover 5 includes a first layer 51, a second layer 52, and a third layer 53. The second layer 52 is disposed on the main surface 51a. The third layer 53 is disposed on the back surface 51b.

  Both ends of the third layer 53 in the y direction are conductively connected to the thirteenth connection part 33m and the fourteenth connection part 33n via the conductive bonding material 58. The fifteenth connection part 33o, the sixteenth connection part 33p, and the third layer 53 may be separated from each other or insulated by providing an insulating material (not shown) between them. preferable.

  The semiconductor light emitting device 4 is connected to the second main surface portion 31b by a wire 49.

  In the semiconductor light emitting device A5, the light emitted from the semiconductor light emitting element 4 is reflected by the seventh surface portion 34i (the seventh surface 2i) after traveling in the x direction. This light is diffused by the cover 5 and emitted from the cover 5.

  According to the present embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. In addition, by appropriately setting the angle of the seventh surface 2i with respect to the z direction, the direction in which the light emitted from the semiconductor light emitting device A5 travels can be changed.

<Fifth Embodiment First Modification>
FIG. 51 shows a first modification of the semiconductor light emitting device A5. The semiconductor light emitting device A51 of this modification is different from the above embodiment mainly in the configuration of the support 1.

  The first layer 21 is made of, for example, glass epoxy resin. The second layer 22 is made of, for example, an epoxy resin or a silicone resin, and is formed, for example, by molding.

  The conductive part 3 includes a first communication part 33a and a second communication part 33b. The first connecting portion 33a and the second connecting portion 33b penetrate the first layer 21 in the z direction. The first connecting portion 33a makes the 31a and the first back surface portion 32a conductive. The second connecting portion 33b electrically connects the second main surface portion 31b and the second back surface portion 32b.

  On the seventh surface 22i of the second layer 22, a metal film 29 is provided. The metal film 29 is a film on which a metal such as aluminum is deposited.

  The cover 5 is joined to the main surface 22a. In the illustrated example, a third layer 53 is formed on 15b of the first layer 51. The conduction path between the third layer 53 and the third back surface portion 32c and the fourth back surface portion 32d is, for example, a surface metal layer or a through-hole which is a part of the conductive portion 3 appropriately formed in the second layer 22 and the third layer 23. It is composed of a metal part.

  According to the present modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed.

<Ventilation part 6 structural example>
FIGS. 52 to 61 show specific examples of the structure of the ventilation section 6.

  FIG. 52 is an enlarged plan view of a main part showing a first structural example of the housing section 7, and FIG. 53 is a sectional view. The accommodating portion 7 of the present example includes a groove 211 formed in the second layer 22 and a back surface 23b of the third layer 23. The groove 211 of the present example has a shape along the x direction and is parallel to the x direction. The groove 211 is recessed from the main surface 22a and reaches the eighth surface 22j and the fourth surface 22f.

  In the illustrated example, the groove 211 has a first surface 2111 and two second surfaces 2112.

  The first surface 2111 is a surface located at the deepest part in the z direction in the groove 211. In the illustrated example, the first surface 2111 is a flat surface that is perpendicular to the z direction. The two second surfaces 2112 connect the first surface 2111 and the main surface 22a, respectively. In the illustrated example, the two second surfaces 2112 are slightly inclined with respect to the z direction, but are not limited thereto.

  FIG. 54 is an enlarged plan view of a main part showing a second example of the structure of the housing 7. In the illustrated example, the groove 211 constituting the ventilation part 6 has a first surface 2111, two second surfaces 2112, a third surface 2113, and a fourth surface 2114.

  The first surface 2111 is a surface located at the deepest part in the z direction in the groove 211. In the illustrated example, the first surface 2111 is a flat surface that is perpendicular to the z direction. The two second surfaces 2112 connect the first surface 2111 and the main surface 22a, respectively. In the illustrated example, the two second surfaces 2112 are slightly inclined with respect to the z direction, but are not limited thereto.

  The third surface 2113 is interposed between the fourth surface 22f and one of the second surfaces 2112. The third surface 2113 is a curved surface having a convex shape when viewed in the z direction. Note that a curved surface similar to the third surface 2113 may be interposed between the fourth surface 22f and the other second surface 2112.

  The fourth surface 2114 is interposed between the eighth surface 22j and the other second surface 2112. The fourth surface 2114 is a curved surface having a convex shape when viewed in the z direction. Note that a curved surface similar to the fourth surface 2114 may be interposed between the inner surface second portion 272 and one of the second surfaces 2112. In the illustrated example, the first opening area S1 on the eighth surface 22j side and the second opening area S2 on the fourth surface 22f side have substantially the same dimension in the y direction.

  Since the ventilation portion 6 (groove portion 211) is provided to be inclined with respect to the x direction, it is possible to extend a path through which an unintended object enters the ventilation portion 6. This is preferable for protecting the semiconductor light emitting device 4.

  FIG. 55 is an enlarged plan view of a main part showing a third structural example of the ventilation section 6. The ventilation part 6 of the present example is different from the above-described example in the shape of the groove 211 as viewed in the z direction. In the groove 211 of this example, the dimension in the y direction of the first opening area S1 is larger than the dimension in the y direction of the second opening area S2. Further, the dimension of the groove 211 in the y direction decreases from the eighth surface 22j to the fourth surface 22f. That is, the groove 211 has a tapered shape that is small on the fourth surface 22f side (external side) when viewed in the z direction.

  According to this example, the reliability of the semiconductor light emitting device can be improved. In addition, by reducing the dimension of the second opening area S2 in the y direction, it is possible to further suppress intrusion of an unintended object.

  FIG. 56 is an enlarged plan view of a main part showing a fourth structural example of the ventilation section 6. The ventilation part 6 of the present example is different from the above-described example in the shape of the groove 211 as viewed in the z direction. In the groove 211 of this example, the dimension in the y direction of the first opening area S1 is smaller than the dimension in the y direction of the second opening area S2. Further, the dimension of the groove 211 in the y direction increases from the eighth surface 22j to the fourth surface 22f. That is, the groove 211 has a tapered shape that is large on the fourth surface 22f side (external side) when viewed in the z direction.

  According to this example, the reliability of the semiconductor light emitting device can be improved. In addition, by reducing the dimension of the first opening area S1 in the y direction, even if an unintended object enters the groove 211 (ventilation part 6) from the fourth surface 22f side (outside), the first opening area S1 is reduced. In this case, it is possible to suppress intrusion into the ventilation section 6.

  FIG. 57 is an enlarged plan view of a main part showing a fifth structural example of the ventilation section 6. In the ventilation section 6 of this example, the groove 211 is provided adjacent to the fifth surface 22g. According to this example, the reliability of the semiconductor light emitting device can be improved.

  FIG. 58 is an enlarged plan view of a main part showing a sixth structural example of the ventilation section 6. The ventilation section 6 of the present example is different from the above-described example in the shape of the groove 211 as viewed in the z direction. The groove 211 of this example has a first part 211a, a second part 211b, and a third part 211c. The first portion 211a is connected to the eighth surface 22j and has a shape extending in the x direction. The third portion 211c is connected to the fourth surface 22f and has a shape extending in the x direction. The second portion 211b is connected to the first portion 211a and the third portion 211c, and extends in a direction crossing the x direction, for example, extends in the y direction. Such a groove 211 has a so-called crank shape in the z direction.

  According to this example, the reliability of the semiconductor light emitting device can be improved. In addition, by making the groove portion 211 into a crank shape, intrusion of an object can be more reliably suppressed in the second portion 211b if the groove portion 211 is not intended.

  FIG. 59 is an enlarged cross-sectional view of a main part showing a seventh structural example of the ventilation section 6. In the ventilation part 6 of this example, the groove 211 has a first surface 2111, a pair of second surfaces 2112, and a pair of fifth surfaces 2115.

  The first surface 2111 is a surface located at the deepest part in the z direction in the groove 211. In the illustrated example, the first surface 2111 is a flat surface that is perpendicular to the z direction. The pair of second surfaces 2112 is connected to the first surface 2111. The second surface 2112 is inclined with respect to the z direction, for example. The pair of fifth surfaces 2115 is interposed between the first surface 2111 and the pair of second surfaces 2112. The fifth surface 2115 is a concave curved surface. According to this example, the reliability of the semiconductor light emitting device can be improved.

  FIG. 60 is an essential part enlarged cross-sectional view showing an eighth example of the structure of the ventilation section 6. In the ventilation part 6 of this example, the groove 211 has the sixth surface 2116. The sixth surface 2116 is a curved surface having both ends in the y direction connected to the main surface 22a and concave from the main surface 22a to the other side in the z direction (the lower side in the drawing). According to this example, the reliability of the semiconductor light emitting device can be improved.

  FIG. 61 is an enlarged sectional view of a main part showing a ninth structural example of the ventilation section 6. In the ventilation section 6 of the present example, the groove 211 has two second surfaces 2112. The two second surfaces 2112 are each connected to the main surface 22a and are connected to each other. The two second surfaces 2112 are inclined with respect to the z direction. According to this example, the reliability of the semiconductor light emitting device can be improved.

  The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be variously changed in design.

[Appendix 1]
A semiconductor light emitting device;
A support having an opening through which light from the semiconductor light-emitting element passes, including a substrate and a conductive portion disposed on the substrate,
A cover that closes the opening when viewed in a first direction,
The cover includes a first layer that transmits light from the semiconductor light emitting element, a second layer that diffuses light from the semiconductor light emitting element, and a conductive material, and is conductive according to a deformation state of the first layer. A semiconductor light emitting device including a third layer whose state changes.
[Appendix 2]
The semiconductor light emitting device according to claim 1, wherein the third layer of the cover transmits light from the semiconductor light emitting element.
[Appendix 3]
A first main surface and a back surface facing each other in the first direction, and a second main surface facing the same side as the first main surface and separated from the back surface more than the first main surface; 3. The semiconductor light emitting device according to claim 1 or 2, comprising:
[Appendix 4]
The semiconductor light emitting device according to claim 3, wherein the conductive portion includes a main surface portion arranged on the first main surface and a back surface portion arranged on the back surface.
[Appendix 5]
5. The semiconductor light emitting device according to claim 4, wherein the conductive portion includes a cover connecting portion that reaches the second main surface and the back surface and is electrically connected to the back surface portion.
[Appendix 6]
The first layer of the cover has a main surface located on a side opposite to the semiconductor light emitting element in the first direction and a back surface facing the semiconductor light emitting element,
The semiconductor light emitting device according to claim 5, wherein the third layer of the cover is disposed on the back surface of the first layer.
[Appendix 7]
7. The semiconductor light emitting device according to claim 6, further comprising: a conductive bonding material that electrically connects the cover connecting portion and the third layer.
[Appendix 8]
8. The semiconductor light emitting device according to claim 7, wherein the cover connecting portion penetrates the base material so as to reach the second main surface and the back surface.
[Appendix 9]
The first layer of the cover has a cover main surface located opposite to the semiconductor light emitting element in the first direction and a cover back surface facing the semiconductor light emitting element,
The semiconductor light emitting device according to claim 8, wherein the third layer of the cover is disposed on a back surface of the cover of the first layer.
[Appendix 10]
The semiconductor light emitting device according to claim 9, further comprising: a conductive bonding material that electrically connects the cover connecting portion and the third layer.
[Appendix 11]
The base material has a concave portion that reaches the second main surface and the back surface,
11. The semiconductor light emitting device according to supplementary note 10, wherein the cover connecting portion is disposed on the concave portion.
[Appendix 12]
The semiconductor light emitting device according to any one of supplementary notes 6 to 11, wherein the base has an inner side surface surrounding the cover in a direction perpendicular to the first direction.
[Appendix 13]
9. The semiconductor device according to any one of supplementary notes 6 to 8, wherein the base has an outer surface that matches an outer edge of the cover when viewed in the first direction.
[Appendix 14]
14. The supplementary note 4 to 13, wherein the conductive portion includes an element connecting portion that connects the main surface portion and the back surface portion and penetrates the base material so as to reach the first main surface and the back surface. Semiconductor device.
[Appendix 15]
The semiconductor device according to any one of supplementary notes 1 to 14, wherein the base material has a housing part for housing the semiconductor light emitting element and a ventilation part connecting the housing part and the outside.
[Appendix 16]
The semiconductor device according to any one of supplementary notes 1 to 15, wherein the semiconductor light emitting element is a semiconductor laser element.
[Appendix 17]
17. The semiconductor device according to supplementary note 16, wherein the semiconductor light emitting element is a VCSEL element.

A1, A11, A12, A13A2, A3, A4, A41, A5: semiconductor light emitting device 1: support 2: substrate 2a: main surface 2b: back surface 2c: first surface 2d: second surface 2e: third surface 2f : 4th surface 2g: 5th surface 2h: 6th surface 2i: 7th surface 2j: 8th surface 2k: 9th surface 3: conductive part 4: semiconductor light emitting element 5: cover 6: ventilation part 7: housing part 8 : Light receiving element 10: support 20: base material 21: first layer 21a: main surface 21b: back surface 21c: first surface 21d: second surface 21e: third surface 21f: fourth surface 22: second layer 22a: Main surface 22b: back surface 22c: first surface 22d: second surface 22e: third surface 22f: fourth surface 22g: fifth surface 22h: sixth surface 22i: seventh surface 22j: eighth surface 23: third layer 23a: Main surface 23b: Back surface 23c: First surface 23d: Second surface 23e: Third surface 23f : Fourth surface 23g: Fifth surface 23h: Sixth surface 23i: Seventh surface 23j: Eighth surface 24: Fourth layer 24a: Main surface 24b: Back surface 24c: First surface 24d: Second surface 24e: Third Surface 24f: fourth surface 24g: fifth surface 24h: sixth surface 24i: seventh surface 24j: eighth surface 26i: concave portion 26j: concave portion 26k: concave portion 26l: concave portion 27: opening 28: concave portion 30: conductive portion 31 : Main surface portion 31a: First main surface portion 31b: Second main surface portion 31c: Third main surface portion 31d: Fourth main surface portion 32: Back surface portion 32a: First rear surface portion 32b: Second rear surface portion 32c: Third rear surface portion 32d : Fourth back part 32e: Fifth back part 32f: Sixth back part 32g: Seventh back part 32h: Eighth back part 32i: Ninth back part 33: Contact part 33a: First contact part 33b: Second contact Part 33c: Third communication part 33d: Fourth communication part 3 e: Fifth connecting part 33f: Sixth connecting part 33g: Seventh connecting part 33h: Eighth connecting part 33i: Ninth connecting part 33j: Tenth connecting part 33k: Eleventh connecting part 331: Twelfth connecting part 33m: 13th communication section 33n: 14th communication section 33o: 15th communication section 33p: 16th communication section 33q: 17th communication section 33r: 18th communication section 33s: 19th communication section 33t: 20th communication section 34i: 7th communication section Surface portion 34j: Eighth surface portion 41: First electrode 42: Second electrode 48: Submount substrate 49: Wire 50: Cover material 51: First layer 51A: First layer 51B: First layer 51a: Main surface 51b: Back surface 51c: first surface 51d: second surface 51e: third surface 51f: fourth surface 52: second layer 53: third layer 57: bonding material 58: conductive bonding material 59: conductive bonding material 89: wire 210 : First layer 21 : Groove portion 211a: first portion 211b: second portion 211c: third portion 220: second layer 230: third layer 240: fourth layer 260k: through hole 260l: through hole 272: inner side second portion 280: through Hole 330k: eleventh connection part 330l: twelfth connection part 451: second substrate 452: fourth semiconductor layer 453: active layer 454: fifth semiconductor layer 455: current confinement layer 456: insulating layer 457: conductive layer 460: light emission Area 510: first layer 520: second layer 530: third layer 531: first part 532: second part 2111: first surface 2112: second surface 2113: third surface 2114: fourth surface 2115: fifth Surface 2116: sixth surface 4551: opening 4561: opening 4571: opening C1: electronic device Ct: controller DL: dividing line S1: first opening region S2: second opening region

Claims (17)

A semiconductor light emitting device;
A support having an opening through which light from the semiconductor light-emitting element passes, including a substrate and a conductive portion disposed on the substrate,
A cover that closes the opening when viewed in a first direction,
The cover includes a first layer that transmits light from the semiconductor light emitting element, a second layer that diffuses light from the semiconductor light emitting element, and a conductive material, and is conductive according to a deformation state of the first layer. A semiconductor light emitting device including a third layer whose state changes.   The semiconductor light emitting device according to claim 1, wherein the third layer of the cover transmits light from the semiconductor light emitting element.   A first main surface and a back surface facing each other in the first direction, and a second main surface facing the same side as the first main surface and separated from the back surface more than the first main surface; The semiconductor light emitting device according to claim 1, comprising:   The semiconductor light emitting device according to claim 3, wherein the conductive portion includes a main surface portion disposed on the first main surface and a back surface portion disposed on the back surface.   5. The semiconductor light emitting device according to claim 4, wherein the conductive portion includes a cover connecting portion that reaches the second main surface and the back surface and conducts to the back surface portion. 6. The first layer of the cover has a main surface located on a side opposite to the semiconductor light emitting element in the first direction and a back surface facing the semiconductor light emitting element,
6. The semiconductor light emitting device according to claim 5, wherein the third layer of the cover is disposed on the back surface of the first layer.   The semiconductor light emitting device according to claim 6, further comprising a conductive bonding material that electrically connects the cover connecting portion and the third layer.   The semiconductor light emitting device according to claim 7, wherein the cover connecting portion penetrates the base material so as to reach the second main surface and the back surface. The first layer of the cover has a cover main surface located opposite to the semiconductor light emitting element in the first direction and a cover back surface facing the semiconductor light emitting element,
The semiconductor light emitting device according to claim 8, wherein the third layer of the cover is disposed on a back surface of the cover of the first layer.   The semiconductor light emitting device according to claim 9, further comprising: a conductive bonding material that electrically connects the cover connecting portion and the third layer. The base material has a concave portion that reaches the second main surface and the back surface,
The semiconductor light emitting device according to claim 10, wherein the cover connecting portion is disposed on the recess.   The semiconductor light emitting device according to claim 6, wherein the base has an inner surface surrounding the cover in a direction perpendicular to the first direction.   9. The semiconductor device according to claim 6, wherein the base has an outer surface that matches an outer edge of the cover when viewed in the first direction. 10.   The conductive part includes an element connecting part that connects the main surface part and the back surface part and penetrates the base material so as to reach the first main surface and the back surface. 13. The semiconductor device according to claim 1.   15. The semiconductor device according to claim 1, wherein the base has a housing portion that houses the semiconductor light emitting element and a ventilation portion that connects the housing portion to the outside.   The semiconductor device according to claim 1, wherein the semiconductor light emitting device is a semiconductor laser device.   17. The semiconductor device according to claim 16, wherein said semiconductor light emitting element is a VCSEL element.

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