JP7219565B2 - Electronics - Google Patents

Description

The present disclosure relates to electronic equipment .

2. Description of the Related Art Semiconductor light emitting devices having semiconductor light emitting elements as light sources have been widely proposed. Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light-emitting device disclosed in the document includes a semiconductor laser element as an example of a semiconductor light-emitting element, a substrate on which the semiconductor light-emitting element is mounted, a case surrounding the semiconductor light-emitting element, and a translucent cover closing the case. and

JP 2015-123378 A

It is not preferable to directly see the light from the semiconductor light emitting device with the naked eye. If the cover has a diffusion function, etc., damage to the cover may lead to direct viewing of the light from the semiconductor light emitting element.

The present disclosure has been conceived under the circumstances described above, and aims to provide a semiconductor light-emitting device capable of suppressing direct viewing of light from a semiconductor light-emitting element caused by damage to the cover. Make it an issue.

A semiconductor light-emitting device provided by the present disclosure includes a semiconductor light-emitting element, a support including a base material and a conductive portion disposed on the base material, and having an opening through which light from the semiconductor light-emitting element passes; A semiconductor light-emitting device comprising: a cover that closes the opening when viewed in a first direction, the cover comprising: a first layer that transmits light from the semiconductor light-emitting element; and a first layer that diffuses the light from the semiconductor light-emitting element. A second layer and a third layer made of a conductive material and having a conductive state that changes according to the deformation state of the first layer.

According to the present disclosure, it is possible to suppress direct viewing of the light from the semiconductor light emitting element due to the damage of the cover.

Other features and advantages of the present disclosure will become more apparent from the detailed description below with reference to the accompanying drawings.

1 is a perspective view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a plan view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a bottom view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. FIG. 3 is a cross-sectional view taken along line VV of FIG. 2; 3 is a cross-sectional view taken along line VI-VI of FIG. 2; FIG. FIG. 3 is a cross-sectional view along line VII-VII of FIG. 2; FIG. 3 is a cross-sectional view along line VIII-VIII of FIG. 2; 1 is an enlarged cross-sectional perspective view showing a semiconductor light emitting element of a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting element of a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 2 is a bottom view showing an example of a cover of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 1 is a system configuration diagram showing an example of an electronic device using a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. FIG. 4 is a plan view of a main part showing one step of the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 14 is a cross-sectional view of a main part taken along line XIV-XIV in FIG. 13; FIG. 4 is a plan view of a main part showing one step of the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 16 is a cross-sectional view of a main part along line XVI-XVI of FIG. 15; FIG. 4 is a plan view of a main part showing one step of the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 18 is a cross-sectional view of essential parts along line XVIII-XVIII in FIG. 17; FIG. 18 is a cross-sectional view of the essential parts along line XIX-XIX in FIG. 17; FIG. 4 is a cross-sectional view showing another example of the cover of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 10 is a bottom view showing still another example of the cover of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 10 is a plan view showing a first modified example of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 10 is a cross-sectional view showing a second modified example of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure; It is a bottom view showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 25 is a cross-sectional view along line XXVI-XXVI of FIG. 24; FIG. 4 is a plan view showing a semiconductor light emitting device according to a second embodiment of the present disclosure; FIG. 28 is a cross-sectional view along line XXVIII-XXVIII of FIG. 27; FIG. 28 is a cross-sectional view along line XXIX-XXIX of FIG. 27; FIG. 28 is a cross-sectional view of a main part taken along line XXX-XXX in FIG. 27; FIG. 10 is a cross-sectional view of a main part showing one step of a method for manufacturing a semiconductor light emitting device according to a second embodiment of the present disclosure; FIG. 11 is a plan view showing a semiconductor light emitting device according to a third embodiment of the present disclosure; FIG. 33 is a cross-sectional view along line XXXIII-XXXIII of FIG. 32; FIG. 11 is a cross-sectional view of a main part showing one step of a method for manufacturing a semiconductor light emitting device according to a third embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; It is a bottom view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure. FIG. 36 is a cross-sectional view along line XXXVII-XXXVII of FIG. 35; FIG. 36 is a cross-sectional view along line XXXVIII-XXXVIII of FIG. 35; FIG. 11 is a plan view showing a substrate of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view showing a substrate of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view showing a substrate of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view showing a substrate of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 43 is a cross-sectional view of essential parts along line XLIII-XLIII in FIG. 42; FIG. 11 is a plan view of a main part showing a first modified example of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 45 is a cross-sectional view along the XLV-XLV line in FIG. 44; FIG. 11 is a plan view showing a substrate of a first modified example of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 12 is a plan view showing a base material of a second modified example of the semiconductor light emitting device according to the fourth embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a semiconductor light emitting device according to a fifth embodiment of the present disclosure; FIG. 49 is a cross-sectional view along line XLIX-XLIX in FIG. 48; FIG. 49 is a cross-sectional view along line LL in FIG. 48; FIG. 20 is a cross-sectional view showing a first modification of the semiconductor light emitting device according to the fifth embodiment of the present disclosure; FIG. 4 is a plan view of a main part showing an example of a ventilation part of the support part of the present disclosure; FIG. 4 is a cross-sectional view of a main part showing an example of a ventilation part of the support part of the present disclosure; FIG. 4 is a plan view of a main part showing another example of the ventilation part of the supporting part of the present disclosure; FIG. 10 is a plan view of a main part showing still another example of the ventilation part of the supporting part of the present disclosure; FIG. 10 is a plan view of a main part showing still another example of the ventilation part of the supporting part of the present disclosure; FIG. 10 is a plan view of a main part showing still another example of the ventilation part of the supporting part of the present disclosure; FIG. 4 is a cross-sectional view of a main part showing another example of the ventilation part of the support part of the present disclosure; FIG. 10 is a cross-sectional view of a main part showing still another example of the ventilation part of the support part of the present disclosure; FIG. 10 is a cross-sectional view of a main part showing still another example of the ventilation part of the support part of the present disclosure; FIG. 10 is a cross-sectional view of a main part showing still another example of the ventilation part of the support part of the present disclosure;

Preferred embodiments of the present disclosure will be specifically described below with reference to the drawings.

The terms "first", "second", "third", etc. in this disclosure are used merely as labels and are not necessarily intended to impose a permutation of the objects.

<Semiconductor Light Emitting Device First Embodiment>
1 to 12 show a semiconductor light emitting device according to a first embodiment of the present disclosure. A semiconductor light-emitting device A1 of this embodiment includes a support 1, a semiconductor light-emitting element 4, a light-receiving element 8, and a cover 5. As shown in FIG.

FIG. 1 is a perspective view showing a semiconductor light emitting device A1. FIG. 2 is a plan view showing the semiconductor light emitting device A1. FIG. 3 is a fragmentary plan view showing the semiconductor light emitting device A1. FIG. 4 is a bottom view showing the semiconductor light emitting device A1. FIG. 5 is a cross-sectional view along line VV in FIG. FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. FIG. 7 is a cross-sectional view along line VII-VII of FIG. FIG. 8 is a cross-sectional view along line VIII-VIII of FIG. FIG. 9 is an enlarged sectional perspective view showing a semiconductor light emitting element of the semiconductor light emitting device A1. FIG. 10 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device A1. FIG. 11 is a bottom view showing an example of the cover of the semiconductor light emitting device A1. FIG. 12 is a system configuration diagram showing an example of electronic equipment using the semiconductor light emitting device A1. The z-direction corresponds to the first direction of the present disclosure.

The shape and size of the semiconductor light emitting device A1 are not particularly limited. In the illustrated example, the semiconductor light emitting device A1 has a rectangular parallelepiped shape. The x-direction dimension of the semiconductor light-emitting device A1 is, for example, 2.8 mm to 4.0 mm, the y-direction dimension is, for example, about 2.8 mm to 4.0 mm, and the z-direction dimension is, for example, 1.2 mm to 3.0 mm. It is about 0 mm.

The structure of the support 1 is not particularly limited, and the support 1 includes a base material 2 and a conductive portion 3 in this embodiment.

The base material 2 is made of a material having at least an insulating surface. In this embodiment, substrate 2 includes first layer 21 , second layer 22 , third layer 23 and fourth layer 24 . Materials of the first layer 21, the second layer 22, the third layer 23, and the fourth layer 24 of the substrate 2 are not particularly limited, and in the present embodiment, they are made of ceramics such as alumina and aluminum nitride.

The first layer 21 is a plate-like portion, and its shape is not particularly limited. In the illustrated example, the first layer 21 has a main surface 21a, a back surface 21b, a first surface 21c, a second surface 21d, a third surface 21e, and a fourth surface 21f. It has a substantially rectangular shape.

The main surface 21a and the back surface 21b face opposite sides in the z-direction. The main surface 21a corresponds to the "first main surface" of the present disclosure.

The first surface 21c and the second surface 21d face opposite sides in the y direction. The first surface 21c is located between the main surface 21a and the back surface 21b in the z-direction, and is connected to the main surface 21a and the back surface 21b in the illustrated example. The second surface 21d is located between the main surface 21a and the back surface 21b in the z-direction, and is connected to the main surface 21a and the back surface 21b in the illustrated example.

The third surface 21e and the fourth surface 21f face opposite sides in the x direction. The third surface 21e is located between the main surface 21a and the back surface 21b in the z-direction, and is connected to the main surface 21a and the back surface 21b in the illustrated example. The fourth surface 21f is located between the main surface 21a and the back surface 21b in the z-direction, and is connected to the main surface 21a and the back surface 21b in the illustrated example.

The second layer 22 is a plate-like portion, and its shape is not particularly limited. In the illustrated example, the second layer 22 includes a main surface 22a, a back surface 22b, a first surface 22c, a second surface 22d, a third surface 22e, a fourth surface 22f, a fifth surface 22g, a sixth surface 22h, It has a seventh surface 22i and an eighth surface 22j, and has a substantially rectangular annular shape when viewed in the z direction.

The main surface 22a and the back surface 22b face opposite sides in the z-direction. The back surface 22b faces the main surface 21a of the first layer 21 and is joined to each other. Main surface 21a and back surface 22b are joined by, for example, laminating the ceramic materials described above and firing them.

The first surface 22c and the second surface 22d face opposite sides in the y direction. The first surface 22c is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The second surface 22d is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The first surface 22c is flush with the first surface 21c. The second surface 22d is flush with the second surface 21d.

The third surface 22e and the fourth surface 22f face opposite sides in the x direction. The third surface 22e is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The fourth surface 22f is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The third surface 22e is flush with the third surface 21e. The fourth surface 22f is flush with the fourth surface 21f.

The fifth surface 22g and the sixth surface 22h are located between the first surface 22c and the second surface 22d in the y direction. The fifth surface 22g and the sixth surface 22h face opposite sides in the y direction. The fifth surface 22g faces the same side as the second surface 22d. The sixth surface 22h faces the same side as the first surface 22c. The fifth surface 22g is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The sixth surface 22h is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example.

The seventh surface 22i and the eighth surface 22j are located between the third surface 22e and the fourth surface 22f in the x-direction. The seventh surface 22i and the eighth surface 22j face opposite sides in the x direction. The seventh surface 22i faces the same side as the fourth surface 22f. The eighth surface 22j faces the same side as the third surface 22e. The seventh surface 22i is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example. The eighth surface 22j is located between the main surface 22a and the back surface 22b in the z-direction, and is connected to the main surface 22a and the back surface 22b in the illustrated example.

The third layer 23 is a plate-like portion, and its shape is not particularly limited. In the illustrated example, the third layer 23 includes a main surface 23a, a back surface 23b, a first surface 23c, a second surface 23d, a third surface 23e, a fourth surface 23f, a fifth surface 23g, a sixth surface 23h, It has a seventh surface 23i and an eighth surface 23j, and has a substantially rectangular annular shape when viewed in the z direction.

The main surface 23a and the back surface 23b face opposite sides in the z-direction. The back surface 23b faces the main surface 22a of the second layer 22 and is joined to each other. Main surface 22a and rear surface 23b are joined by, for example, laminating the ceramic materials described above and firing them. The main surface 23a corresponds to an example of the "second main surface" of the present disclosure.

The first surface 23c and the second surface 23d face opposite sides in the y direction. The first surface 23c is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The second surface 23d is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The first surface 23c is flush with the first surface 22c. The second surface 23d is flush with the second surface 22d.

The third surface 23e and the fourth surface 23f face opposite sides in the x direction. The third surface 23e is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The fourth surface 23f is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The third surface 23e is flush with the third surface 22e. The fourth surface 23f is flush with the fourth surface 22f.

The fifth surface 23g and the sixth surface 23h are positioned between the first surface 23c and the second surface 23d in the y direction. The fifth surface 23g and the sixth surface 23h face opposite sides in the y direction. The fifth surface 23g faces the same side as the second surface 23d. The sixth surface 23h faces the same side as the first surface 23c. The fifth surface 23g is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The sixth surface 23h is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The fifth surface 23g is flush with the fifth surface 22g. The sixth surface 23h is flush with the sixth surface 22h.

The seventh surface 23i and the eighth surface 23j are located between the third surface 23e and the fourth surface 23f in the x direction. The seventh surface 23i and the eighth surface 23j face opposite sides in the x direction. The seventh surface 23i faces the same side as the fourth surface 23f. The eighth surface 23j faces the same side as the third surface 23e. The seventh surface 23i is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The eighth surface 23j is located between the main surface 23a and the back surface 23b in the z-direction, and is connected to the main surface 23a and the back surface 23b in the illustrated example. The seventh surface 23i is flush with the seventh surface 22i. The eighth surface 23j is flush with the eighth surface 22j.

The fourth layer 24 is a plate-like portion, and its shape is not particularly limited. In the illustrated example, the fourth layer 24 includes a main surface 24a, a back surface 24b, a first surface 24c, a second surface 24d, a third surface 24e, a fourth surface 24f, a fifth surface 24g, a sixth surface 24h, It has a seventh surface 24i and an eighth surface 24j, and has a substantially rectangular annular shape when viewed in the z direction.

The main surface 24a and the back surface 24b face opposite sides in the z-direction. The back surface 24b faces the main surface 23a of the third layer 23 and is joined together. Main surface 23a and rear surface 24b are joined by, for example, laminating the above-described ceramic materials and firing them.

The first surface 24c and the second surface 24d face opposite sides in the y direction. The first surface 24c is located between the main surface 24a and the back surface 24b in the z-direction, and in the illustrated example is connected to the main surface 24a and the back surface 24b. The second surface 24d is located between the main surface 24a and the back surface 24b in the z-direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. The first surface 24c is flush with the first surface 23c. The second surface 24d is flush with the second surface 23d.

The third surface 24e and the fourth surface 24f face opposite sides in the x direction. The third surface 24e is located between the main surface 24a and the back surface 24b in the z-direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. The fourth surface 24f is located between the main surface 24a and the back surface 24b in the z-direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. The third surface 24e is flush with the third surface 23e. The fourth surface 24f is flush with the fourth surface 23f.

The fifth surface 24g and the sixth surface 24h are located between the first surface 24c and the second surface 24d in the y direction. The fifth surface 24g and the sixth surface 24h face opposite sides in the y direction. The fifth surface 24g faces the same side as the second surface 24d. The sixth surface 24h faces the same side as the first surface 24c. The fifth surface 24g is located between the main surface 24a and the back surface 24b in the z-direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. The sixth surface 24h is located between the main surface 24a and the back surface 24b in the z-direction, and is connected to the main surface 24a and the back surface 24b in the illustrated example. In the illustrated example, the fifth surface 24g is located between the first surface 24c and the fifth surface 23g when viewed in the z direction. The sixth surface 24h is positioned between the second surface 24d and the sixth surface 23h when viewed in the z direction.

The seventh surface 24i and the eighth surface 24j are located between the third surface 24e and the fourth surface 24f in the x-direction. The seventh surface 24i and the eighth surface 24j face opposite sides in the x direction. The seventh surface 24i faces the same side as the fourth surface 24f. The eighth surface 24j faces the same side as the third surface 24e. The seventh surface 24i is located between the main surface 24a and the back surface 24b in the z-direction, and in the illustrated example is connected to the main surface 24a and the back surface 24b. The eighth surface 24j is located between the main surface 24a and the back surface 24b in the z-direction, and in the illustrated example is connected to the main surface 24a and the back surface 24b. In the illustrated example, the seventh surface 24i is positioned between the third surface 24e and the seventh surface 23i when viewed in the z direction. The eighth surface 24j is positioned between the fourth surface 24f and the eighth surface 23j when viewed in the z direction.

The base material 2 has a housing portion 7 . In the present embodiment, the housing portion 7 includes a main surface 21a, a fifth surface 22g, a sixth surface 22h, a seventh surface 22i, an eighth surface 22j, a fifth surface 23g, a sixth surface 23h, a seventh surface 23i and This is the space defined by the eighth surface 23j.

The substrate 2 has openings 27 . The opening portion 27 is a portion where the accommodating portion 7 opens. In the illustrated example, the opening 27 is constituted by the upper edges of the fifth surface 23g, the sixth surface 23h, the seventh surface 23i and the eighth surface 23j in the z-direction, that is, the inner edges of the main surface 23a. It is

The base material 2 has a ventilation part 6 . The ventilation part 6 is connected to the housing part 7 and the outside of the semiconductor light emitting device A1. The ventilation portion 6 allows gas to flow between the housing portion 7 and the outside of the semiconductor light emitting device A1. The position and structure of the ventilation part 6 are not particularly limited, and in the illustrated example, the ventilation part 6 is connected to the eighth surface 22j and the fourth surface 22f. The ventilation portion 6 is arranged on the opposite side of the semiconductor light emitting element 4 with the third main surface portion 31c interposed therebetween in the x direction. A specific structural example of the ventilation section 6 will be described later.

The base material 2 has recesses 28 . The concave portion 28 is connected to the main surface 24a and the back surface 21b and extends along the z direction. Further, the recess 28 is connected to the first surface 21c, the third surface 21e, the first surface 22c, the third surface 22e, the first surface 23c, the third surface 23e, the first surface 24c and the third surface 24e.

The conductive portion 3 is made of a conductive material such as Cu, Ni, Ti, Au, or the like. Further, the conductive portion 3 may be provided with a surface layer made of Sn.

In this embodiment, the conductive portion 3 includes a main surface portion 31, a back surface portion 32, and a connecting portion 33.

The main surface portion 31 is arranged on the main surface 21 a of the base material 2 . In the illustrated example, the principal surface portion 31 includes a first principal surface portion 31a, a second principal surface portion 31b, a third principal surface portion 31c and a fourth principal surface portion 31d.

The first main surface portion 31a is provided along the fifth surface 22g and the seventh surface 22i as viewed in the z direction. The second main surface portion 31b is provided along the sixth surface 22h and the eighth surface 22j as viewed in the z direction. In the illustrated example, the first major surface portion 31a is larger than the second major surface portion 31b.

The third main surface portion 31c is arranged along the fifth surface 22g and the eighth surface 22j as viewed in the z direction. The third principal surface portion 31c is located between the first principal surface portion 31a and the eighth surface 22j in the x direction, and is located between the second principal surface portion 31b and the fifth surface 22g in the y direction. The third principal surface portion 31c is smaller than the first principal surface portion 31a and the second principal surface portion 31b.

The fourth main surface portion 31d is arranged along the sixth surface 22h and the seventh surface 22i as viewed in the z direction. The fourth principal surface portion 31d is located between the second principal surface portion 31b and the seventh surface 22i in the x direction, and is located between the first principal surface portion 31a and the sixth surface 22h in the y direction. The fourth principal surface portion 31d is smaller than the first principal surface portion 31a and the second principal surface portion 31b and larger than the third principal surface portion 31c.

The back surface portion 32 is arranged on the back surface 21 b of the base material 2 . In the illustrated example, the back surface portion 32 includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, a fourth back surface portion 32d, a fifth back surface portion 32e, a sixth back surface portion 32f, and a seventh back surface portion 32f. It includes a back surface portion 32g and an eighth back surface portion 32h.

The first back surface portion 32a is provided along the first surface 21c and the third surface 21e when viewed in the z direction, and overlaps the first main surface portion 31a when viewed in the z direction. The second back surface portion 32b is provided along the second surface 21d and the fourth surface 21f when viewed in the z direction, and overlaps the second main surface portion 31b when viewed in the z direction.

The third back surface portion 32c is provided along the first surface 21c and the fourth surface 21f when viewed in the z direction, and overlaps the third main surface portion 31c when viewed in the z direction. The fourth back surface portion 32d is provided along the second surface 21d and the third surface 21e when viewed in the z direction, and overlaps the fourth main surface portion 31d when viewed in the z direction.

The fifth back surface portion 32e is provided along the first surface 21c when viewed in the z direction, and positioned between the first back surface portion 32a and the third back surface portion 32c in the x direction.

The sixth back surface portion 32f is provided along the second surface 21d when viewed in the z direction, and positioned between the second back surface portion 32b and the fourth back surface portion 32d in the x direction.

The seventh back surface portion 32g is provided along the third surface 21e when viewed in the z direction, and positioned between the first back surface portion 32a and the fourth back surface portion 32d in the y direction.

The eighth back surface portion 32h is provided along the fourth surface 21f when viewed in the z direction, and positioned between the second back surface portion 32b and the third back surface portion 32c in the y direction.

The communication portion 33 constitutes a conduction path in the z direction. In this embodiment, the communication portion 33 penetrates the base material 2 in the z direction. In the illustrated example, the contact portion 33 includes a first contact portion 33a, a second contact portion 33b, a third contact portion 33c, a fourth contact portion 33d, a fifth contact portion 33e, a sixth contact portion 33f, and a seventh contact portion 33f. A contact portion 33g and an eighth contact portion 33h are included. The first communication portion 33a, the second communication portion 33b, the third communication portion 33c, and the fourth communication portion 33d correspond to the "element communication portion" of the present disclosure. The fifth contact portion 33e, the sixth contact portion 33f, the seventh contact portion 33g, and the eighth contact portion 33h correspond to the "cover contact portion" of the present disclosure.

The first communication portion 33a penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The first communication portion 33a is connected to the first main surface portion 31a and the first back surface portion 32a, and conducts them.

The second communication portion 33b penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The second communication portion 33b is connected to the second main surface portion 31b and the second back surface portion 32b, and conducts them.

The third connecting portion 33c penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The third connecting portion 33c is connected to the third main surface portion 31c and the third back surface portion 32c, and conducts them.

The fourth communication portion 33d penetrates the first layer 21 of the base material 2 so as to reach the main surface 21a and the back surface 21b. The fourth communication portion 33d is connected to the fourth main surface portion 31d and the fourth back surface portion 32d, and conducts them.

The fifth connecting portion 33e penetrates the first layer 21, the second layer 22 and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The fifth connecting portion 33e is connected to the fifth back surface portion 32e.

The sixth connecting portion 33f penetrates the first layer 21, the second layer 22 and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The sixth connecting portion 33f is connected to the sixth back surface portion 32f.

The seventh connecting portion 33g penetrates the first layer 21, the second layer 22 and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The seventh connecting portion 33g is connected to the seventh back surface portion 32g.

The eighth communication portion 33h penetrates the first layer 21, the second layer 22 and the third layer 23 of the base material 2 so as to reach the main surface 23a and the back surface 21b. The eighth communication portion 33h is connected to the eighth rear surface portion 32h.

The semiconductor light emitting element 4 is a light source in the semiconductor light emitting device A1 and emits light in a predetermined wavelength band. A specific configuration of the semiconductor light emitting element 4 is not particularly limited, and may be a semiconductor laser element, an LED element, or the like. In this embodiment, the semiconductor light emitting device 4 is a semiconductor laser device, and a VCSEL device is employed. The semiconductor light emitting element 4 is die-bonded to the first main surface portion 31 a of the conductive portion 3 and supported by the main surface 21 a of the first layer 21 of the base material 2 . Light from the semiconductor light emitting element 4 passes through the opening 27 of the substrate 2 and is emitted to the outside.

As shown in FIG. 3, the semiconductor light emitting device 4 is provided with a first electrode 41 and a plurality of light emitting regions 460 in plan view. The first electrode 41 is arranged on the third main surface portion 31c side in the x direction. The plurality of light emitting regions 460 are discretely arranged in a region excluding the first electrode 41 in plan view of the semiconductor light emitting device 4 .

As shown in FIGS. 9 and 10, the semiconductor light emitting device 4 of this example includes a first electrode 41, a second electrode 42, a second substrate 451, a fourth semiconductor layer 452, an active layer 453, a fifth semiconductor layer 454, A current confinement layer 455, an insulating layer 456 and a conductive layer 457 are provided to form a plurality of light emitting regions 460. FIG. The configuration example shown in the figure is an example of a VCSEL element as the semiconductor light emitting element 4, and is not limited to this configuration. FIG. 10 shows an enlarged portion including one light emitting region 460 .

The second substrate 451 is made of semiconductor. A semiconductor forming the second substrate 451 is, for example, GaAs. The semiconductor forming the second substrate 451 may be other than GaAs.

The active layer 453 is made of a compound semiconductor that emits light with a wavelength of, for example, the 980 nm band (hereinafter referred to as "λa") by spontaneous emission and stimulated emission. The active layer 453 is located between the fourth semiconductor layer 452 and the fifth semiconductor layer 454 . In this embodiment, a multiple quantum well structure in which undoped GaAs well layers and undoped AlGaAs barrier layers (barrier layers) are alternately laminated. For example, undoped Al _0.35 Ga _0.65 As barrier layers and undoped GaAs well layers are alternately formed for 2 to 6 cycles.

The fourth semiconductor layer 452 is typically a distributed Bragg reflector (DBR) layer and formed on the second substrate 451 . The fourth semiconductor layer 452 is made of a semiconductor having the first conductivity type. In this example, the first conductivity type is n-type. The fourth semiconductor layer 452 is configured as a DBR for efficiently reflecting light emitted from the active layer 453 . More specifically, the active layer 453 is formed by stacking a plurality of pairs of two AlGaAs layers each having a thickness of λa/4 and having different reflectances. More specifically, the fourth semiconductor layer 452 has a relatively low Al composition n-type Al _0.16 Ga _0.84 As layer (low Al composition layer) with a thickness of, for example, 600 Å and a thickness of, for example, 700 Å. An n-type Al _0.92 Ga _0.16 As layer (high Al composition layer) having a relatively high Al composition is alternately stacked repeatedly for a plurality of cycles (for example, 20 cycles). The n-type Al _0.16 Ga _0.84 As layer and the n-type Al _0.92 Ga _0.16 As layer have, for example, 2×10 ¹⁷ cm ⁻³ to 3×10 ¹⁸ cm ⁻³ and 2×10 ¹⁷ cm ⁻³ to 3×10 cm −3 , respectively. It is doped with n-type impurities (eg, Si) at a concentration of ¹⁸ cm ⁻³ .

The fifth semiconductor layer 454 is typically a DBR layer and made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. A fourth semiconductor layer 452 is located between the fifth semiconductor layer 454 and the second substrate 451 . The fifth semiconductor layer 454 is configured as a DBR for efficiently reflecting light emitted from the active layer 453 . More specifically, the fifth semiconductor layer 454 is formed by stacking a plurality of pairs of two AlGaAs layers each having a thickness of λa/4 and having different reflectances. The fifth semiconductor layer 454 includes, for example, a p-type Al _0.16 Ga _0.84 As layer with a relatively low Al composition (low Al composition layer) and a p-type Al _0.92 Ga _0.16 As layer with a relatively high Al composition (high Al composition layer). composition layer) are laminated alternately for a plurality of cycles (for example, 20 cycles).

The current confinement layer 455 is located within the fifth semiconductor layer 454 . The current confinement layer 455 is made of a layer that contains a large amount of Al and is easily oxidized, for example. The current confinement layer 455 is formed by oxidizing this easily oxidizable layer. Current confinement layer 455 does not necessarily have to be formed by oxidation, and may be formed by other methods (eg, ion implantation). An opening 4551 is formed in the current confinement layer 455 . A current flows through the opening 4551 .

An insulating layer 456 is formed on the fifth semiconductor layer 454 . The insulating layer 456 is made of _SiO2 , for example. An opening 4561 is formed in the insulating layer 456 .

The conductive layer 457 is formed over the insulating layer 456 . Conductive layer 457 is made of a conductive material (eg, metal). Conductive layer 457 is electrically connected to fifth conductive layer 354 through opening 4561 in insulating layer 456 . The conductive layer 457 has openings 4571 .

Emissive region 460 is the region where light from active layer 453 exits either directly or after reflection. In this example, the light emitting region 460 has an annular shape in plan view, but the shape is not particularly limited. The fifth semiconductor layer 454, the current confinement layer 455, the insulating layer 456, and the conductive layer 457 are laminated in the light emitting region 460, and the opening 4551 of the current constriction layer 455, the opening 4561 of the insulating layer 456, and the opening 4571 of the conductive layer 457 are formed. etc. are formed. In light emitting region 460 , light from active layer 453 is emitted through opening 4571 of conductive layer 457 .

The first electrode 41 is made of metal, for example, and is electrically connected to the fifth semiconductor layer 454 . The second electrode 42 is formed on the back surface of the second substrate 451 and is made of metal, for example. The second electrode 42 is die-bonded to the first main surface portion 31a with a conductive bonding material 48 such as paste containing metal such as Ag or solder. Thereby, the second electrode 42 is electrically connected to the first main surface portion 31 a of the conductive portion 3 .

In this embodiment, the first electrode 41 is connected by a wire 49 to the third main surface portion 31c. The wire 49 is made of metal such as Au, and is bonded to the first electrode 41 and the third main surface portion 31c, respectively. The number of wires 49 is not particularly limited, and in the illustrated example, a plurality of wires 49 (four wires 49) are provided. Also, in the illustrated example, the first bonding portion of the wire 49 is provided on the first electrode 41, and the second bonding portion thereof is provided on the third main surface portion 31c.

The light receiving element 8 is an element having a photoelectric conversion function that generates an electromotive force by receiving light emitted from the semiconductor light emitting element 4 . The light-receiving element 8 is die-bonded to the second main surface portion 31b by paste containing metal such as Ag, solder, or the like. Also, the light receiving element 8 is connected to the fourth main surface portion 31d by a wire 89. As shown in FIG. The wire 89 is made of metal such as Au, and is bonded to the light receiving element 8 and the fourth main surface portion 31d, respectively.

The cover 5 closes the opening 27 of the base material 2 as viewed in the z direction. The cover 5 allows light from the semiconductor light emitting element 4 to pass therethrough. In this embodiment, cover 5 includes first layer 51 , second layer 52 and third layer 53 .

The first layer 51 is made of a material, such as glass, that transmits light from the semiconductor light emitting element 4 . In this embodiment, the first layer 51 is made of transparent glass. In the illustrated example, the first layer 51 has a main surface 51a, a back surface 51b, a first surface 51c, a second surface 51d, a third surface 51e and a fourth surface 51f, and is rectangular when viewed in the z direction. Shape. The main surface 51a corresponds to the "cover main surface" of the present disclosure, and the back surface 51b corresponds to the "cover back surface" of the present disclosure. The principal surface 51a faces the same side as the principal surfaces 21a and 24a. The back surface 51b faces part of the main surface 23a. The main surface 51a is at substantially the same height as the main surface 24a in the z-direction.

The first surface 51c and the second surface 51d face opposite sides in the y direction. The first surface 51c faces the fifth surface 24g. The second surface 51d faces the sixth surface 24h.

The third surface 51e and the fourth surface 51f face opposite sides in the x direction. The third surface 51e faces the seventh surface 24i. The fourth surface 51f faces the eighth surface 24j. Thus, the first layer 51 (cover 5) of this embodiment is surrounded by the substrate 2 in the x-direction and the y-direction, which are perpendicular to the z-direction. The fifth surface 24g, the sixth surface 24h, the seventh surfaces 24i and 24j of the substrate 2 correspond to the "inner surface" of the present disclosure.

The second layer 52 is arranged on the first layer 51 and is a layer that diffuses and transmits the light from the semiconductor light emitting element 4 . As the second layer 52, there is a resin layer that has undergone optical processing to realize a diffusion function. The second layer 52 may be a layer obtained by subjecting the surface layer of the first layer 51 to a surface treatment. In the illustrated example, the second layer 52 is arranged on the major surface 51a.

The third layer 53 is a layer that is made of a conductive material and changes its conduction state according to the deformation state of the first layer 51 . The deformed state of the first layer 51 is not limited to elastic deformation, and is a concept including a state in which the surface of the first layer 51 is scratched or the like, and a state in which the first layer 51 is cracked. The material of the third layer 53 is not particularly limited, and ITO is used in this embodiment. Therefore, the third layer 53 allows the light from the semiconductor light emitting device 4 to pass therethrough. The shape and size of the third layer 53 are not particularly limited, and in the illustrated example, the third layer 53 is provided on the entire back surface 51b of the first layer 51, as shown in FIG. In this case, the third layer 53 overlaps the semiconductor light emitting element 4 and the light receiving element 8 as a whole when viewed in the z direction. The third layer 53 is preferably made of a transparent conductive material, but may be made of an opaque conductive material. In this case, the third layer 53 is preferably provided on the surface of the first layer 51 in, for example, a fine line shape from the viewpoint of securing the amount of light.

In this embodiment, the third layer 53 of the cover 5 is electrically connected to the conductive portion 3 via the conductive bonding material 58 . The conductive bonding material 58 has conductivity, and is, for example, a resin material containing conductive particles or a conductive filler, an anisotropic conductive film (ACF), or the like. In the illustrated example, the conductive bonding material 58 is provided over substantially the entire area where the cover 5 and the main surface 23a overlap. As a result, the space between the cover 5 and the main surface 23a is substantially closed. In the illustrated example, the second layer 52 is conductively joined to the fifth communication portion 33e, the sixth connection portion 33f, the seventh connection portion 33g, and the eighth connection portion 33h via a plurality of conductive bonding materials 58. ing.

FIG. 12 is a system configuration diagram showing an example of electronic equipment using the semiconductor light emitting device A1. An electronic device C1 shown in the figure has a semiconductor light emitting device A1 and a controller Ct. The semiconductor light emitting device A1 and the controller Ct are mounted, for example, on a circuit board (not shown). In the semiconductor light emitting device A<b>1 , the third back surface portion 32 c is electrically connected to the anode electrode of the semiconductor light emitting element 4 , and the first back surface portion 32 a is electrically connected to the cathode electrode of the semiconductor light emitting element 4 . Further, the fourth back surface portion 32 d is electrically connected to the anode electrode of the light receiving element 8 , and the second back surface portion 32 b is electrically connected to the cathode electrode of the light receiving element 8 . The seventh back surface portion 32g and the eighth back surface portion 32h are electrically connected to both end portions of the third layer 53 in the x direction, and the fifth back surface portion 32e and the sixth back surface portion 32f are connected to both end portions of the third layer 53 in the y direction. is conducted to

The first rear surface portion 32a, the second rear surface portion 32b, the third rear surface portion 32c, the fourth rear surface portion 32d, the fifth rear surface portion 32e, the sixth rear surface portion 32f, the seventh rear surface portion 32g, and the eighth rear surface portion 32h are interconnects. , to the controller Ct. The controller Ct performs light emission control of the semiconductor light emitting element 4 , detection control of the light receiving state by the light receiving element 8 , and detection control of the conduction state of the third layer 53 .

Next, an example of a method for manufacturing the semiconductor light emitting device A1 will be described below with reference to FIGS. 13 to 19. FIG.

First, as shown in FIGS. 13 and 14, a support 10 is prepared. The support 10 includes a base material 20 and a conductive portion 30 and is an intermediate material capable of forming a plurality of supports 1 . The semiconductor light-emitting device A1 may be manufactured using a single support 1 by a method similar to the manufacturing method described below.

Substrate 20 is for forming substrate 2 and includes first layer 210 , second layer 220 , third layer 230 and fourth layer 240 . The first layer 210 , the second layer 220 , the third layer 230 and the fourth layer 240 are made of the same material as the first layer 21 , the second layer 22 , the third layer 23 and the fourth layer 24 . The first layer 210 , the second layer 220 , the third layer 230 and the fourth layer 240 are formed with respective surfaces and the like for forming the plurality of housing portions 7 . A plurality of through holes 280 are also formed in the base material 20 . The through hole 280 is a circular through hole when viewed in the z direction.

Next, as shown in FIGS. 15 and 16, the semiconductor light emitting element 4 and the light receiving element 8 are mounted. The semiconductor light emitting element 4 is arranged on the first main surface portion 31a and bonded to the first main surface portion 31a by paste containing metal such as Ag, solder, or the like. Further, the light receiving element 8 is arranged on the second principal surface portion 31b and joined to the second principal surface portion 31b by paste or solder containing metal such as Ag, for example. Next, a plurality of wires 49 are bonded to the first electrode 41 of the semiconductor light emitting element 4 and the third main surface portion 31c. Also, a wire 89 is bonded to the light receiving element 8 and the fourth main surface portion 31d.

The cover 5 is then attached to the support 10 as shown in FIGS. 17-19. The attachment of the cover 5 is performed using a conductive bonding material 58, for example. Specifically, in the z-direction view of the third layer 53 of the cover 5, the portion overlapping the fifth communication portion 33e, the sixth communication portion 33f, the seventh communication portion 33g, and the eighth communication portion 33h and the fifth communication portion 33e, sixth communication portion 33f, seventh communication portion 33g, and eighth communication portion 33h are conductively joined by conductive bonding material 58, respectively.

Next, the support 10 is divided along the division lines DL in the drawing. This division may be a method of splitting the substrate 20 of the support 10 along grooves or the like previously provided in the support 10, or a method of cutting using a blade or the like. A plurality of semiconductor light emitting devices A1 are obtained by this division. The through hole 280 becomes the concave portion 28 of the base material 2 by division.

Next, the operation of the semiconductor light emitting device A1 will be described.

According to this embodiment, if damage such as cracking occurs in the first layer 51 of the cover 5 , the third layer 53 may crack. This changes the conduction state of the third layer 53 . By detecting this change, for example, by the controller Ct, it is possible to determine that some problem has occurred in the cover 5, and for example, the light emission of the semiconductor light emitting element 4 can be stopped. Direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 can be suppressed.

As shown in FIG. 2, the third layer 53 of the cover 5 is electrically connected to the seventh communication portion 33g and the eighth communication portion 33h which are spaced apart in the x direction, and the fifth communication portion 33e and the fifth communication portion 33e which are spaced apart in the y direction. 6 is electrically connected to the connecting portion 33f. Therefore, if a crack or the like along the x-direction occurs in the third layer 53 (first layer 51), the conduction state of the third layer 53 between the fifth connecting portion 33e and the sixth connecting portion 33f separated in the y-direction is changed. changes. Further, if a crack or the like occurs in the third layer 53 (the first layer 51) along the y direction, the conduction state of the third layer 53 between the seventh connecting portion 33g and the eighth connecting portion 33h that are separated in the x direction is broken. Change. This makes it possible to detect that cracks or the like have occurred in the first layer 51 along a plurality of directions.

The fifth communicating portion 33e, the sixth communicating portion 33f, the seventh communicating portion 33g, the eighth communicating portion 33h as cover connecting portions and the rear surface 51b face each other. By disposing the third layer 53 on the back surface 51b, the conductive bonding material 58 allows the fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, the eighth connecting portion 33h, and the third layer 53 to be connected to each other. and can be reliably conducted.

The housing portion 7 communicates with the outside through the ventilation portion 6 . When the semiconductor light-emitting device A1 is mounted on a circuit board, for example, and heated in a reflow furnace or the like, the gas in the accommodating portion 7 expands. This expanded gas can be led to the outside through the ventilation section 6 . As a result, it is possible to prevent the internal pressure of the housing portion 7 from becoming unduly high, and to prevent the cover 5 from coming off the support 1, for example. Therefore, the reliability of the semiconductor light emitting device A1 can be enhanced.

Figures 20-61 illustrate variations and other embodiments of the present disclosure. In these figures, the same or similar elements as in the above embodiment are denoted by the same reference numerals as in the above embodiment.

<Cover 5 first modification>
FIG. 20 shows a first modification of the cover 5. As shown in FIG. The cover 5 of this modification includes a first layer 51A, a first layer 51B, a second layer 52 and a third layer 53. As shown in FIG. The first layer 51A and the first layer 51B are made of the same material as the first layer 51 in the example described above. The second layer 52 is interposed between the first layers 51A and 51B.

Such a modification can also prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 . Further, as understood from this modified example, the second layer 52 is not limited to any specific configuration as long as it is configured to diffuse and transmit the light from the semiconductor light emitting element 4 .

<Second modification of cover 5>
FIG. 21 shows a second modification of the cover 5. As shown in FIG. In the cover 5 of this modified example, the third layer 53 is patterned when viewed in the z direction. Specifically, the third layer 53 has a plurality of first portions 531 and a plurality of second portions 532 . The first portion 531 and the second portion 532 extend along different directions. In the illustrated example, the first portion 531 extends along the x-direction and the second portion 532 extends along the y-direction. The ends of the first portion 531 and the second portion 532 are connected to each other. By alternately connecting the plurality of first portions 531 and the plurality of second portions 532, the third layer 53 has a first spiral portion 53a, a second spiral portion 53b, and a folded portion 53c, When viewed in the z-direction, it forms a continuous curved line. The first spiral portion 53a and the second spiral portion 53b have spiral shapes extending from the outside to the inside, and are arranged substantially parallel to each other. The folded portion 53c connects the inner ends of the first spiral portion 52a and the second spiral portion 53b. In this example, for example, both ends of the third layer 53 in the y direction are electrically connected to the above-described fifth connecting portion 33e and sixth connecting portion 33f.

Such a modification can also prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 . Further, according to this modification, if a crack along the x-direction occurs at any location in the first layer 51, one of the plurality of second portions 532 extending along the y-direction breaks. Further, if a crack occurs along the y direction in any part of the first layer 51, one of the plurality of first portions 531 extending along the x direction is disconnected. Therefore, according to this modification, although the third layer 53 constitutes only one conduction path connecting the fifth communication portion 33e and the sixth communication portion 33f, any one of the first layers 51 It is possible to detect the occurrence of a crack along an unspecified direction at a location.

<Semiconductor Light Emitting Device First Embodiment First Modification>
FIG. 22 shows a first modification of the semiconductor light emitting device A1. The semiconductor light emitting device A11 of this modified example differs from the example described above in the region where the third layer 53 of the cover 5 is provided. The third layer 53 of this modified example is provided near the peripheral edge of the first layer 51 of the cover 5 and has a rectangular ring shape when viewed in the z direction. In addition, the third layer 53 surrounds the semiconductor light emitting element 4 and the light receiving element 8 when viewed in the z direction, and does not overlap the semiconductor light emitting element 4 and the light receiving element 8 . Furthermore, in the illustrated example, the third layer 53 is included in the main surface 23a of the third layer 23 when viewed in the z direction.

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 . In addition, since the third layer 53 does not overlap the semiconductor light emitting element 4 and the light receiving element 8, attenuation of the light from the semiconductor light emitting element 4 and the light directed toward the light receiving element 8 by the third layer 53 is suppressed. can do.

<Semiconductor Light Emitting Device First Embodiment Second Modification>
FIG. 23 shows a second modification of the semiconductor light emitting device A1. In the semiconductor light emitting device A12 of this modified example, the first bonding portion of the wire 49 is provided on the third main surface portion 31c, and the second bonding portion is provided on the first electrode 41 of the semiconductor light emitting element 4. FIG. It is preferable to provide a so-called bump portion to which a melted wire ball is attached between the second bonding portion of the wire 49 and the first electrode 41 .

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 . In addition, it is possible to reduce the dimension of the wire 49 in the z direction, which is advantageous for miniaturization of the semiconductor light emitting device A12.

<Semiconductor Light Emitting Device First Embodiment Third Modification>
24 to 26 show a third modification of the semiconductor light emitting device A1. The semiconductor light emitting device A13 of this modified example differs from the embodiment described above mainly in the configuration of the conductive portion 3 .

FIG. 24 is a fragmentary plan view showing the semiconductor light emitting device A13. FIG. 25 is a bottom view showing the semiconductor light emitting device A11. 26 is a cross-sectional view taken along line XXVI--XXVI of FIG. 24. FIG.

The principal surface portion 31 of this modified example includes a first principal surface portion 31a, a second principal surface portion 31b, and a third principal surface portion 31c. The first main surface portion 31a is formed along substantially the entire length of the eighth surface 22j.

In the communication portion 33 of this modified example, the first communication portion 33a and the fourth communication portion 33d overlap the first main surface portion 31a when viewed in the z direction, and are connected to the first main surface portion 31a. In addition, the second main surface portion 31b and the third main surface portion 31c and the second connecting portion 33b and the third connecting portion 33c overlap the second layer 22, the third layer 23 and the fourth layer 24 when viewed in the z direction. .

The back surface portion 32 of this modified example includes a ninth back surface portion 32i. The ninth back surface portion 32i includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, a fourth back surface portion 32d, a fifth back surface portion 32e, a sixth back surface portion 32f, and a seventh back surface portion 32f as viewed in the z direction. It is surrounded by the back surface portion 32g and the eighth back surface portion 32h. The ninth back surface portion 32i is connected to the first communication portion 33a and the fourth communication portion 33d.

The light receiving element 8 is connected to the first main surface portion 31a by a wire 89. As shown in FIG.

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 . Further, in this modification, the first main surface portion 31a on which the semiconductor light emitting element 4 is mounted is connected to the ninth communication portion 33i through the first communication portion 33a and the fourth communication portion 33d. Thereby, the heat from the semiconductor light emitting element 4 can be radiated more efficiently.

<Semiconductor Light Emitting Device Second Embodiment>
27 to 31 show a semiconductor light emitting device according to a second embodiment of the present disclosure. The semiconductor light-emitting device A2 of this embodiment differs from the above-described embodiments mainly in the configuration of the connecting portion 33 and the conduction mode of the connecting portion 33 and the cover 5. FIG.

FIG. 27 is a plan view showing the semiconductor light emitting device A2. 28 is a cross-sectional view taken along line XXVIII--XXVIII of FIG. 27. FIG. 29 is a cross-sectional view taken along line XXIX--XXIX of FIG. 27. FIG. FIG. 30 is a cross-sectional view of a main part taken along line XXX--XXX in FIG. FIG. 31 is a fragmentary cross-sectional view showing one step of the method of manufacturing the semiconductor light emitting device A2.

In this embodiment, the substrate 2 has recesses 26i-26l. The recesses 26i to 26l are recessed inwardly of the base material 2 when viewed in the z direction. The recesses 26i-26l extend along the z-direction and reach the main surface 24a and the back surface 21b. The concave portion 26i and the concave portion 26j are arranged separately on both sides in the y direction with the housing portion 7 interposed therebetween. The concave portions 26k and 26l are arranged separately on both sides in the x direction with the accommodation portion 7 interposed therebetween. Such base material 2 may be made of glass epoxy resin, for example. The main surface 24a of the present embodiment corresponds to an example of the "second main surface" of the present disclosure.

The conductive portion 3 of this embodiment has pad portions 31i, 31j, 31k, and 31l. Pad portions 31 i , 31 j , 31 k , and 31 l are formed on main surface 24 a of fourth layer 24 . The pad portion 31i is formed along the first surface 24c and the recessed portion 26i, and has a substantially semicircular shape when viewed in the z direction. The pad portion 31j is formed along the second surface 24d and the recessed portion 26j, and has a substantially semicircular shape when viewed in the z direction. The pad portion 31k is formed along the third surface 24e and the recess 26k, and has a substantially semicircular shape when viewed in the z direction. The pad portion 31l is formed along the fourth surface 24f and the recessed portion 26l, and has a substantially semicircular shape when viewed in the z direction. As shown in FIG. 30, the pad portion 31k has a protrusion 311k. The protrusion 311k is a portion of the left end of the pad portion 31k in the x-direction that protrudes upward in the z-direction along the third surface 24e. The same applies to the pad portions 31i, 31j, and 31l.

The communication portion 33 of the present embodiment includes a first communication portion 33a, a second communication portion 33b, a third communication portion 33c, a fourth communication portion 33d, a ninth communication portion 33i, a tenth communication portion 33j, and an eleventh communication portion. 33k and a twelfth communication portion 33l. The ninth contact portion 33i, the tenth contact portion 33j, the eleventh contact portion 33k, and the twelfth contact portion 33l correspond to the "cover contact portion" of the present disclosure.

The ninth communication portion 33i is arranged above the recess 26i, as shown in FIG. The ninth communication portion 33i reaches the main surface 23a. Also, the ninth connecting portion 33i is connected to the above-described pad portion 31i and the fifth back surface portion 32e. Note that the conductive portion 3 is not provided in the concave portion 28 .

The tenth communication portion 33j is arranged on the recessed portion 26j. The tenth communication portion 33j reaches the main surface 23a. Further, the tenth connecting portion 33j is connected to the pad portion 31j and the sixth back surface portion 32f.

The eleventh communication portion 33k is arranged on the recess 26k. The eleventh communication portion 33k reaches the main surface 23a. Also, the eleventh connecting portion 33k is connected to the above-described pad portion 31k and the seventh back surface portion 32g.

The twelfth communication portion 33l is arranged on the recess 26l. The twelfth communication portion 33l reaches the main surface 23a. Further, the twelfth connecting portion 33l is connected to the pad portion 31l and the eighth rear surface portion 32h.

The cover 5 of this embodiment has the third layer 53 arranged on the main surface 51a and the second layer 52 arranged on the back surface 51b. Both ends of the third layer 53 in the y direction are electrically connected to the pad portions 31i and 31j by the conductive bonding material 59, respectively. Both ends of the third layer 53 in the x-direction are electrically connected to the pad portions 31k and 31l by the conductive bonding material 59, respectively.

FIG. 31 shows an example of a method for manufacturing the semiconductor light emitting device A2. In this example, a through hole 260k and a through hole 260l are formed in the base material 20 of the support 10. As shown in FIG. An eleventh communication portion 330k is formed on the inner surface of the through hole 260k. A twelfth communication portion 330l is formed on the inner surface of the through hole 260l. An annular portion 310k surrounding the through hole 260k and an annular portion 310l surrounding the through hole 260l are formed on the main surface 24a. When the support 10 is divided at the illustrated dividing line DL, the through-hole 260k and the eleventh communication portion 330k become the recessed portion 26k and the eleventh communication portion 33k, and the through-hole 260l and the twelfth communication portion 330l become the recessed portion 26l and the third communication portion 33k. 12 communication unit 33l. Also, the annular portion 310k becomes the pad portion 31k, and the annular portion 310l becomes the pad portion 31l. This manufacturing method is the same for the concave portions 26i and 26j, the ninth communication portion 33i, the tenth communication portion 33j, the pad portion 31i and the pad portion 31j. Moreover, the projection 311k described above is formed by cutting from the bottom to the right in the figure along the dividing line DL.

Further, a conductive bonding material 59 is provided so as to straddle the annular portion 310k and the third layer 53 of the cover 5. As shown in FIG. Also, a conductive bonding material 59 is provided so as to straddle the annular portion 310 l and the third layer 53 . Note that the cover 5 may be joined to the main surface 23a using a joining material 57 made of, for example, resin.

According to this embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 . Further, as understood from this embodiment, the third layer 53 may be provided on the main surface 51 a of the cover 5 . In this case, the second layer 52 is provided on the rear surface 51b and is not exposed to the outside. This is suitable for suppressing damage or the like of the second layer 52, and the diffusion function can be exhibited for a longer period of time.

32 to 34 show a semiconductor light emitting device according to a third embodiment of the present disclosure. The semiconductor light-emitting device A3 of this embodiment differs from the above-described embodiments in the configuration of the support 1 and the cover 5 .

FIG. 32 is a plan view showing the semiconductor light emitting device A3. 33 is a cross-sectional view along line XXIX-XXIX in FIG. 32. FIG. FIG. 34 is a fragmentary cross-sectional view showing one step of the method of manufacturing the semiconductor light emitting device A3.

The substrate 2 of this embodiment includes a first layer 21 , a second layer 22 and a third layer 23 . A major surface 23 a of the third layer 23 is not covered with other portions of the substrate 2 . The main surface 23a of the present embodiment corresponds to an example of the "second main surface" of the present disclosure.

The back surface 51b of the first layer 51 of the cover 5 faces substantially the entire main surface 23a. Also, the first surface 23c, the second surface 23d, the third surface 23e, and the fourth surface 23f of the base material 2 match the outer edge of the cover 5 when viewed in the z direction. Such first surface 23c, second surface 23d, third surface 23e and fourth surface 23f correspond to the "outer surface" of the present disclosure.

In this embodiment, the third layer 53 is arranged on the back surface 51b. The third layer 53 is electrically connected to the fifth connecting portion 33e, the sixth connecting portion 33f, the seventh connecting portion 33g, and the eighth connecting portion 33h via a plurality of conductive bonding materials 58. As shown in FIG.

As shown in FIG. 34, in one example of the method of manufacturing the semiconductor light emitting device A3, a support 10 having a substrate 20 composed of a first layer 210, a second layer 220 and a third layer 230 is used. A cover material 50 is attached to the main surface 23 a of the third layer 230 . The cover material 50 is an intermediate material capable of forming a plurality of covers 5 and consists of a first layer 510, a second layer 520 and a third layer 530. As shown in FIG. The first layer 510, the second layer 520, and the third layer 530 are divided along the division line DL, so that the first layer 510 becomes the first layer 51, the second layer 520 becomes the second layer 52, and The third layer 530 becomes the third layer 53 .

According to this embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 . Moreover, as understood from this embodiment, the cover 5 is not limited to being surrounded by a portion of the base material 2 . Since the base material 2 of this embodiment does not have a portion surrounding the cover 5, it is advantageous for miniaturization.

<Fourth Embodiment>
35 to 42 show a semiconductor light emitting device according to a fourth embodiment of the present disclosure. The semiconductor light-emitting device A4 of this embodiment differs from the above-described embodiments mainly in the configuration of the support 1 .

FIG. 35 is a fragmentary plan view showing a semiconductor light emitting device A4. FIG. 36 is a bottom view showing the semiconductor light emitting device A4. 37 is a cross-sectional view taken along line XXXVII-XXXVII of FIG. 35. FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII of FIG. 35. FIG. FIG. 39 is a plan view showing the substrate of the semiconductor light emitting device A4. FIG. 40 is a plan view showing the substrate of the semiconductor light emitting device A4. FIG. 41 is a plan view showing the substrate of the semiconductor light emitting device A4. FIG. 42 is a plan view showing the substrate of the semiconductor light emitting device A4. FIG. 43 is a cross-sectional view of essential parts along line XLIII--XLIII in FIG.

As shown in FIG. 37, substrate 2 of support 1 includes first layer 21, second layer 22, third layer 23 and fourth layer .

As shown in FIG. 42, the first layer 21 of this embodiment has recesses 216a, 216b, 216c and 216d. The recessed portion 216a is interposed between the first surface 21c and the third surface 21e, and is, for example, a concave curved surface along the z direction. The concave portion 216b is interposed between the second surface 21d and the fourth surface 21f, and is, for example, a concave curved surface along the z direction. The recessed portion 216c is interposed between the first surface 21c and the fourth surface 21f, and is, for example, a concave curved surface along the z-direction. The recessed portion 216d is interposed between the fourth surface 21f and the third surface 21e, and is, for example, a concave curved surface along the z direction.

As shown in FIG. 41, the second layer 22 of this embodiment has recesses 226a, 226b, 226c and 226d. The concave portion 226a is interposed between the first surface 22c and the third surface 22e, and is, for example, a concave curved surface along the z-direction. The recessed portion 226b is interposed between the second surface 22d and the fourth surface 22f, and is, for example, a concave curved surface along the z-direction. The recessed portion 226c is interposed between the first surface 22c and the fourth surface 22f, and is, for example, a concave curved surface along the z-direction. The recessed portion 226d is interposed between the fourth surface 22f and the third surface 22e, and is, for example, a concave curved surface along the z-direction.

As shown in FIG. 40, the third layer 23 of this embodiment has recesses 236a, 236b, 236c and 236d. The recessed portion 236a is interposed between the first surface 23c and the third surface 23e, and is, for example, a concave curved surface along the z-direction. The recessed portion 236b is interposed between the second surface 23d and the fourth surface 23f, and is, for example, a concave curved surface along the z direction. The concave portion 236c is interposed between the first surface 23c and the fourth surface 23f, and is, for example, a concave curved surface along the z direction. The recessed portion 236d is interposed between the fourth surface 23f and the third surface 23e, and is, for example, a concave curved surface along the z direction.

As shown in FIG. 39, the fourth layer 24 of this embodiment has recesses 246a, 246b, 246c and 246d. The recessed portion 246a is interposed between the first surface 24c and the third surface 24e, and is, for example, a concave curved surface along the z-direction. The recessed portion 246b is interposed between the second surface 24d and the fourth surface 24f, and is, for example, a concave curved surface along the z direction. The recessed portion 246c is interposed between the first surface 24c and the fourth surface 24f, and is, for example, a concave curved surface along the z-direction. The recessed portion 246d is interposed between the fourth surface 24f and the third surface 24e, and is, for example, a concave curved surface along the z direction.

As shown in FIGS. 38 and 42, the conductive portion 3 includes a first principal surface portion 35a, a second principal surface portion 35b, a third principal surface portion 35c, a fourth principal surface portion 35d, a pad portion 31e, a pad portion 31f, and a pad portion 31g. and a pad portion 31h. The first main surface portion 35a, the second main surface portion 35b, the third main surface portion 35c, the fourth main surface portion 35d, the pad portion 31e, the pad portions 31f and 31g, and the pad portion 31h are arranged on the main surface 24a.

The first main surface portion 35a of this embodiment has a first side 3501a, a second side 3502a, a third side 3503a, a fourth side 3504a, a fifth side 3505a, a sixth side 3506a and a seventh side 3507a. The first side 3501a is a side extending in the x direction. The second side 3502a is a side extending in the x-direction, and is positioned closer to the second surface 21d in the y-direction than the first side 3501a. The third side 3503a extends in the y-direction and is located between the first side 3501a and the second side 3502a. The fourth side 3504a extends in the y-direction and is positioned between the first side 3501a and the second side 3502a. Further, the fourth side 3504a is located closer to the fourth surface 21f in the x direction than the third side 3503a. The fifth side 3505a is recessed from the first side 3501a toward the second side 3502a in the y direction and has a curved shape. The seventh side 3507a is interposed between the second side 3502a and the third side 3503a, and has a curved shape recessed toward the fourth side 3504a in the x direction and toward the first side 3501a in the y direction.

The second main surface portion 35b of this embodiment has a first side 3501b, a second side 3502b, a third side 3503b, a fourth side 3504b, a fifth side 3505b and a sixth side 3506b. The first side 3501b is a side extending in the x direction. The second side 3502b is a side extending in the x-direction, and is positioned closer to the second surface 21d in the y-direction than the first side 3501b. The third side 3503b extends in the y-direction and is positioned between the first side 3501b and the second side 3502b. The fourth side 3504b extends in the y-direction and is positioned between the first side 3501b and the second side 3502b. Further, the fourth side 3504b is positioned closer to the fourth surface 21f in the x direction than the third side 3503b. The fifth side 3505b is interposed between the second side 3502b and the third side 3503b and is inclined with respect to the x direction and the y direction. The sixth side 3506b is interposed between the first side 3501b and the fourth side 3504b and is inclined with respect to the x direction and the y direction.

The third main surface portion 35c of this embodiment has a first side 3501c, a second side 3502c, a third side 3503c, a fourth side 3504c and a fifth side 3505c. The first side 3501c is a side extending in the x direction. The second side 3502c is a side extending in the x-direction, and is located closer to the second surface 21d in the y-direction than the first side 3501c. The third side 3503c extends in the y-direction and is located between the first side 3501c and the second side 3502c. The fourth side 3504c extends in the y-direction and is positioned between the first side 3501c and the second side 3502c. Further, the fourth side 3504c is positioned closer to the fourth surface 21f in the x direction than the third side 3503c. The fifth side 3505c is interposed between the second side 3502c and the fourth side 3504c and is inclined with respect to the x direction and the y direction.

The fourth main surface portion 35d of this embodiment has a first side 3501d, a second side 3502d, a third side 3503d, a fourth side 3504d and a fifth side 3505d. The first side 3501d is a side extending in the x direction. The second side 3502d is a side extending in the x-direction, and is positioned closer to the second surface 21d in the y-direction than the first side 3501d. The third side 3503d extends in the y direction and is positioned between the first side 3501d and the second side 3502d. The fourth side 3504d extends in the y-direction and is positioned between the first side 3501d and the second side 3502d. Further, the fourth side 3504d is located closer to the fourth surface 21f in the x direction than the third side 3503d. The fifth side 3505d is interposed between the second side 3502d and the fourth side 3504d, and is inclined with respect to the x direction and the y direction.

The pad portion 31e is arranged between the first main surface portion 35a and the first surface 21c in the y direction. The pad portion 31e overlaps the first main surface portion 35a when viewed in the y direction. The pad portion 31e has, for example, a circular shape. The pad portion 31e overlaps the fifth side 3505a when viewed in the y direction.

The pad portion 31f is arranged between the second main surface portion 35b and the fourth main surface portion 35d and the second surface 21d in the y direction. The pad portion 31f partially overlaps each of the second main surface portion 35b and the fourth main surface portion 35d when viewed in the y direction. The pad portion 31e has, for example, a circular shape. The pad portion 31f faces the fifth side 3505b and the fifth side 3505d.

The pad portion 31g is arranged between the first main surface portion 35a and the third surface 21e in the x direction. The pad portion 31g overlaps with a portion of the first main surface portion 35a when viewed in the x direction. The pad portion 31g overlaps the seventh side 3507a when viewed in the x direction.

The pad portion 31h is arranged between the second main surface portion 35b and the third main surface portion 35c and the fourth surface 21f in the x direction. The pad portion 31h partially overlaps each of the second main surface portion 35b and the third main surface portion 35c when viewed in the x direction. The pad portion 31h faces the sixth side 3506b and the fifth side 3505c.

Conductive portion 3 further includes extending portions 351a, 352a, 351b, 352b, 351c, 351d, 352d, 311e, 312e, 313e, 311f, 311g, 311h, and 312h arranged on main surface 21a.

The extending portion 351a extends from the first main surface portion 35a toward the concave portion 216a in a direction inclined with respect to the x direction and the y direction. The extending portion 351a is connected to the first main surface portion 35a and reaches the recessed portion 216a. The extending portion 352a extends in the x-direction from the first main surface portion 35a toward the third surface 21e. The extending portion 352a is connected to the first main surface portion 35a and reaches the third surface 21e.

The extending portion 351b extends from the second main surface portion 35b toward the concave portion 216b in a direction inclined with respect to the x direction and the y direction. The extending portion 351b is connected to the second main surface portion 35b and reaches the recessed portion 216b. The extending portion 352b extends in the y-direction from the second main surface portion 35b toward the second surface 21d. The extending portion 352b is connected to the second main surface portion 35b and reaches the second surface 21d.

The extending portion 351c extends from the third main surface portion 35c toward the concave portion 216c in a direction inclined with respect to the x direction and the y direction. The extending portion 351c is connected to the third main surface portion 35c and reaches the recessed portion 216c.

The extending portion 351d extends from the fourth main surface portion 35d toward the recessed portion 216d in a direction inclined with respect to the x direction and the y direction. The extending portion 351d is connected to the fourth main surface portion 35d and reaches the recessed portion 216d. The extending portion 352d extends in the y-direction from the fourth main surface portion 35d toward the second surface 21d. The extending portion 352d is connected to the fourth main surface portion 35d and reaches the second surface 21d.

The extending portion 311e extends in the y direction from the pad portion 31e toward the first surface 21c. The extending portion 311e is connected to the pad portion 31e and reaches the first surface 21c. The extending portion 312e extends from the pad portion 31e toward the first surface 21c. The extending portion 312e is connected to the pad portion 31e and reaches the first surface 21c. The extending portion 312e has a portion extending from the pad portion 31e along the x direction toward the third surface 21e, a portion extending obliquely from the portion, and a portion extending from the portion along the y direction toward the first surface 21c. part. The extending portion 313e extends from the pad portion 31e toward the first surface 21c. The extending portion 313e is connected to the pad portion 31e and reaches the first surface 21c. The extending portion 313e has a portion extending from the pad portion 31e along the x direction toward the fourth surface 21f, a portion extending obliquely from the portion, and a portion extending from the portion along the y direction toward the first surface 21c. part.

The extending portion 311f extends in the y direction from the pad portion 31f toward the second surface 21d. The extending portion 311f is connected to the pad portion 31f and reaches the second surface 21d.

The extending portion 311g extends in the x direction from the pad portion 31g toward the third surface 21e. The extending portion 311g is connected to the pad portion 31g and reaches the third surface 21e.

The extending portion 311h extends in the x direction from the pad portion 31h toward the fourth surface 21f. The extending portion 311h is connected to the pad portion 31h and reaches the fourth surface 21f. The extending portion 312h extends from the pad portion 31h toward the fourth surface 21f. The extending portion 312h is connected to the pad portion 31h and reaches the fourth surface 21f. The extending portion 312h has a portion that extends from the pad portion 31h toward the first surface 21c along the y direction, a portion that extends obliquely from the portion, and a portion that extends from the portion along the x direction toward the fourth surface 21f. part.

As shown in FIG. 36, the conductive portion 3 includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, a fourth back surface portion 32d, a fifth back surface portion 32e, a sixth back surface portion 32f, and a seventh back surface portion 32f. It includes a back surface portion 32g and an eighth back surface portion 32h. The first back surface portion 32a, the second back surface portion 32b, the third back surface portion 32c, the fourth back surface portion 32d, the fifth back surface portion 32e, the sixth back surface portion 32f, the seventh back surface portion 32g, and the eighth back surface portion 32h 21b.

The first back surface portion 32a is provided along the first surface 21c and the third surface 21e when viewed in the z direction, and overlaps the first main surface portion 35a and the extension portion 351a when viewed in the z direction. The second back surface portion 32b is provided along the second surface 21d and the fourth surface 21f when viewed in the z direction, and overlaps the extending portion 351b when viewed in the z direction. The second back surface portion 32b has an oblique side 3201b. The oblique side 3201b is inclined with respect to the x-direction and the y-direction, and is located on the side opposite to the recess 216b.

The third back surface portion 32c is provided along the first surface 21c and the fourth surface 21f when viewed in the z direction, and overlaps the third main surface portions 35c and 351c when viewed in the z direction. The fourth back surface portion 32d is provided along the second surface 21d and the third surface 21e when viewed in the z direction, and overlaps the fourth main surface portion 35d and the extending portion 351d when viewed in the z direction.

The fifth back surface portion 32e is provided along the first surface 21c when viewed in the z direction, and positioned between the first back surface portion 32a and the third back surface portion 32c in the x direction. The fifth back surface portion 32e overlaps the pad portion 31e when viewed in the z direction.

The sixth back surface portion 32f is provided along the second surface 21d when viewed in the z direction, and positioned between the second back surface portion 32b and the fourth back surface portion 32d in the x direction. The sixth back surface portion 32f overlaps the pad portion 31f when viewed in the z direction.

The seventh back surface portion 32g is provided along the third surface 21e when viewed in the z direction, and positioned between the first back surface portion 32a and the fourth back surface portion 32d in the y direction. The seventh back surface portion 32g overlaps the pad portion 31g when viewed in the z direction.

The eighth back surface portion 32h is provided along the fourth surface 21f when viewed in the z direction, and positioned between the second back surface portion 32b and the third back surface portion 32c in the y direction.

The conductive portion 3 further includes an extension portion 321a, an extension portion 321b, an extension portion 321c, and an extension portion 321d. The extending portion 321a, the extending portion 321b, the extending portion 321c, and the extending portion 321d are arranged on the rear surface 21b.

The extending portion 321a extends from the first back surface portion 32a toward the recess 216a. The extending portion 321a is connected to the first back surface portion 32a and reaches the recessed portion 216a. The extending portion 321b extends from the second back surface portion 32b toward the recess 216b. The extending portion 321b is connected to the second back surface portion 32b and reaches the recessed portion 216b. The extending portion 321c extends from the third back surface portion 32c toward the recess 216c. The extending portion 321c is connected to the third back surface portion 32c and reaches the recessed portion 216c. The extending portion 321d extends from the fourth back surface portion 32d toward the recess 216d. The extending portion 321d is connected to the fourth back surface portion 32d and reaches the recessed portion 216d.

The conductive portion 3 shown in FIGS. 36 and 42 further includes a connecting portion 331a, a connecting portion 331b, a connecting portion 331c, a connecting portion 331d, a connecting portion 331e, a connecting portion 331f, a connecting portion 331g, and a connecting portion 331h.

As shown in FIG. 43, the connecting portion 331a is arranged on the concave portion 216a and reaches the main surface 21a and the back surface 21b in the z-direction. The connecting portion 331a is connected to the extending portion 351a and the extending portion 321a. The connecting portion 331b is arranged on the concave portion 216b and reaches the main surface 21a and the back surface 21b in the z-direction. The connecting portion 331b is connected to the extending portion 351b and the extending portion 321b. The communication portion 331c is arranged on the recess 216c and reaches the main surface 21a and the back surface 21b in the z-direction. The connecting portion 331c is connected to the extending portion 351c and the extending portion 321c. The communication portion 331d is arranged on the recess 216d and reaches the main surface 21a and the back surface 21b in the z-direction. The connecting portion 331d is connected to the extending portion 351d and the extending portion 321d.

The communication portion 331e penetrates the first layer 21 in the z-direction and reaches the main surface 21a and the back surface 21b. The connecting portion 331e overlaps with the pad portion 31e and the fifth back surface portion 32e when viewed in the z direction. The connecting portion 331e is connected to the pad portion 31e and the fifth back surface portion 32e.

The communication portion 331f penetrates the first layer 21 in the z-direction and reaches the main surface 21a and the back surface 21b. The connecting portion 331f overlaps the pad portion 31f and the sixth back surface portion 32f when viewed in the z direction. The connecting portion 331f is connected to the pad portion 31f and the sixth back surface portion 32f.

The communication portion 331g penetrates the first layer 21 in the z-direction and reaches the main surface 21a and the back surface 21b. The connecting portion 331g overlaps the pad portion 31g and the seventh back surface portion 32g when viewed in the z direction. The connecting portion 331g is connected to the pad portion 31g and the seventh back surface portion 32g.

The communication portion 331h penetrates the first layer 21 in the z-direction and reaches the main surface 21a and the back surface 21b. The connecting portion 331h overlaps with the pad portion 31h and the eighth rear surface portion 32h when viewed in the z direction. The connecting portion 331h is connected to the pad portion 31h and the eighth rear surface portion 32h.

As shown in FIG. 41, the conductive portion 3 includes a pad portion 36e, a pad portion 36f, a pad portion 36g and a pad portion 36h. Pad portion 36e, pad portion 36f, pad portion 36g, and pad portion 36h are arranged on main surface 22a. Pad portion 36e, pad portion 36f, pad portion 36g, and pad portion 36h are circular, for example.

The pad portion 36e is arranged between the first surface 22c and the fifth surface 22g. The pad portion 36e is located substantially in the center of the second layer 22 in the x direction. The pad portion 36f is arranged between the second surface 22d and the sixth surface 22h. The pad portion 36f is located substantially in the center of the second layer 22 in the x direction. The pad portion 36g is arranged between the third surface 22e and the seventh surface 22i. The pad portion 36g is positioned substantially in the center of the second layer 22 in the x direction. The pad portion 36h is arranged between the fourth surface 22f and the eighth surface 22j. The pad portion 36h is positioned substantially in the center of the second layer 22 in the x direction.

The conductive portion 3 further includes a communication portion 332e, a communication portion 332f, a communication portion 332g, and a communication portion 332h.

The communication portion 332e penetrates the second layer 22 in the z-direction and is connected to the pad portion 36e. The communication portion 332f penetrates the second layer 22 in the z-direction and is connected to the pad portion 36f. The communication portion 332g penetrates the second layer 22 in the z-direction and is connected to the pad portion 36g. The communication portion 332h penetrates the second layer 22 in the z-direction and is connected to the pad portion 36h. Further, the communication portion 332e is in contact with the pad portion 31e. The communication portion 332f is in contact with the pad portion 31f. The connecting portion 332g is connected to the pad portion 31g. The communication portion 332h is connected to the pad portion 31h.

As shown in FIG. 40, the conductive portion 3 includes a pad portion 37e, a pad portion 37f, a pad portion 37g, a pad portion 37h, a pad portion 372e, a pad portion 372f, a pad portion 372g, a pad portion 372h, an extension portion 371e, and an extension portion 371e. It includes an extension 371f, an extension 371g and an extension 371h. Pad portion 37e, pad portion 37f, pad portion 37g, pad portion 37h, pad portion 372e, pad portion 372f, pad portion 372g, pad portion 372h, extension portion 371e, extension portion 371f, extension portion 371g and extension portion 371h is arranged on the main surface 23a.

The pad portion 37e is arranged along the first surface 23c and the fourth surface 23f. Pad portion 37e has a first side 3701e and a second side 3702e. The first side 3701e is located on the side of the fifth surface 23g and the eighth surface 23j, and is, for example, a concave curve. The second side 3702e is located on the side of the first surface 23c and the fourth surface 23f, and is, for example, a concave curve. The second side 3702e faces the concave portion 236c when viewed in the z direction.

The pad portion 37f is arranged along the second surface 23d and the third surface 23e. The pad portion 37f has a first side 3701f and a second side 3702f. The first side 3701f is located on the seventh surface 23i and sixth surface 23h sides and is, for example, a concave curve. The second side 3702f is located on the side of the second surface 23d and the third surface 23e, and is, for example, a concave curve. The second side 3702f faces the concave portion 236d when viewed in the z direction.

The pad portion 37g is arranged along the first surface 23c and the third surface 23e. Pad portion 37g has a first side 3701g and a second side 3702g. The first side 3701g is located on the side of the fifth surface 23g and the seventh surface 23i, and is, for example, a concave curve. The second side 3702g is located on the side of the first surface 23c and the third surface 23e and is, for example, a concave curve. The second side 3702g faces the recess 236a when viewed in the z direction.

The pad portion 37h is arranged along the second surface 23d and the fourth surface 23f. The pad portion 37h has a first side 3701h and a second side 3702h. The first side 3701h is located on the side of the sixth surface 23h and the eighth surface 23j, and is, for example, a concave curve. The second side 3702h is located on the side of the second surface 23d and the fourth surface 23f, and is, for example, a concave curve. The second side 3702h faces the recess 236b when viewed in the z direction.

The pad portion 372e is in contact with the fifth surface 23g and extends toward the first surface 23c in the y direction. The pad portion 372e has, for example, a rectangular shape. The pad portion 372e is located substantially in the center of the third layer 23 in the x direction.

The pad portion 372f is in contact with the fourth surface 23f and extends toward the second surface 23d in the y direction. The pad portion 372f has, for example, a rectangular shape. The pad portion 372f is positioned substantially in the center of the third layer 23 in the x direction.

The pad portion 372g is in contact with the seventh surface 23i and extends toward the third surface 23e in the x direction. The pad portion 372g has, for example, a rectangular shape. The pad portion 372g is positioned substantially in the center of the third layer 23 in the y direction.

The pad portion 372h is in contact with the eighth surface 23j and extends toward the fourth surface 23f in the x direction. The pad portion 372h has, for example, a rectangular shape. The pad portion 372h is located substantially in the center of the third layer 23 in the y direction.

The extending portion 371e connects the pad portion 37e and the pad portion 372e. The extending portion 371e has a strip shape extending in the x direction.

The extending portion 371f connects the pad portion 37f and the pad portion 372f. The extending portion 371f has a strip shape extending in the x direction.

The extending portion 371g connects the pad portion 37g and the pad portion 372g. The extending portion 371g has a strip shape extending in the y direction.

The extending portion 371h connects the pad portion 37h and the pad portion 372h. The extending portion 371h has a strip shape extending in the y direction.

The conductive portion 3 further includes a communication portion 333e, a communication portion 333f, a communication portion 333g, and a communication portion 333h.

The communication portion 333e penetrates the third layer 23 in the z direction. The communication portion 333e overlaps with the pad portion 372e when viewed in the z direction, and is connected to the pad portion 372e. The communication portion 333e is in contact with the pad portion 36e.

The communication portion 333f penetrates the third layer 23 in the z direction. The communication portion 333f overlaps the pad portion 372f when viewed in the z-direction, and is connected to the pad portion 372f. The communication portion 333f is in contact with the pad portion 36f.

The communication portion 333g penetrates the third layer 23 in the z direction. The communication portion 333g overlaps with the pad portion 372g when viewed in the z direction, and is connected to the pad portion 372g. The communication portion 333g is in contact with the pad portion 36g.

The communication portion 333h penetrates the third layer 23 in the z direction. The communication portion 333h overlaps with the pad portion 372h when viewed in the z direction, and is connected to the pad portion 372h. The contact portion 333h is in contact with the pad portion 36h.

As shown in FIG. 39, the conductive portion 3 includes a pad portion 38e, a pad portion 38f, a pad portion 38g, a pad portion 38h, a pad portion 382e, a pad portion 382f, a pad portion 382g, a pad portion 382h, an extension portion 381e, and an extension portion 381e. It includes an extension 381f, an extension 381g and an extension 381h. Pad portion 38e, pad portion 38f, pad portion 38g, pad portion 38h, pad portion 382e, pad portion 382f, pad portion 382g, pad portion 382h, extension portion 381e, extension portion 381f, extension portion 381g and extension portion 381h is arranged on the main surface 24a.

The pad portion 38e is arranged along the first surface 24c and the fourth surface 24f. Pad portion 38e has a first side 3801e and a second side 3802e. The first side 3801e is located on the side of the fifth surface 24g and the eighth surface 24j, and is, for example, a concave curve. The second side 3802e is located on the side of the first surface 24c and the fourth surface 24f, and is, for example, a concave curve. The second side 3802e faces the recess 246c when viewed in the z direction.

The pad portion 38f is arranged along the second surface 24d and the third surface 24e. The pad portion 38f has a first side 3801f and a second side 3802f. The first side 3801f is located on the seventh surface 24i and sixth surface 24h sides, and is, for example, a concave curve. The second side 3802f is located on the side of the second surface 24d and the third surface 24e, and is, for example, a concave curve. The second side 3802f faces the concave portion 246d when viewed in the z direction.

The pad portion 38g is arranged along the first surface 24c and the third surface 24e. The pad portion 38g has a first side 3801g and a second side 3802g. The first side 3801g is located on the side of the fifth surface 24g and the seventh surface 24i, and is, for example, a concave curve. The second side 3802g is located on the side of the first surface 24c and the third surface 24e, and is, for example, a concave curve. The second side 3802g faces the concave portion 246a when viewed in the z direction.

The pad portion 38h is arranged along the second surface 24d and the fourth surface 24f. The pad portion 38h has a first side 3801h and a second side 3802h. The first side 3801h is located on the side of the sixth surface 24h and the eighth surface 24j, and is, for example, a concave curve. The second side 3802h is located on the side of the second surface 24d and the fourth surface 24f, and is, for example, a concave curve. The second side 3802h faces the concave portion 246b when viewed in the z direction.

The pad portion 382e is in contact with the fifth surface 24g and the first surface 24c. The pad portion 382e has, for example, a partially cut-out rectangular shape. The pad portion 382e is located substantially in the center of the fourth layer 24 in the x direction.

The pad portion 382f is in contact with the fourth surface 24f and the eighth surface 24j. The pad portion 382f has, for example, a rectangular shape. The pad portion 382f is located substantially in the center of the fourth layer 24 in the x direction.

The pad portion 382g is in contact with the seventh surface 24i and the third surface 24e. The pad portion 382g has, for example, a rectangular shape. The pad portion 382g is located substantially in the center of the fourth layer 24 in the y direction.

The pad portion 382h is in contact with the eighth surface 24j and the fourth surface 24f. The pad portion 382h has, for example, a rectangular shape. The pad portion 382h is positioned substantially in the center of the fourth layer 24 in the y direction.

The extending portion 381e connects the pad portion 38e and the pad portion 382e. The extending portion 381e has a strip shape extending in the x direction.

The extending portion 381f connects the pad portion 38f and the pad portion 382f. The extending portion 381f has a strip shape extending in the x direction.

The extending portion 381g connects the pad portion 38g and the pad portion 382g. The extending portion 381g has a strip shape extending in the y direction.

The extending portion 381h connects the pad portion 38h and the pad portion 382h. The extending portion 381h has a strip shape extending in the y direction.

The conductive portion 3 further includes a communication portion 333e, a communication portion 333f, a communication portion 333g, and a communication portion 333h.

The communication portion 334e penetrates the third layer 23 in the z direction. The communication portion 334e overlaps with the pad portion 38e when viewed in the z direction, and is connected to the pad portion 38e. The contact portion 334e is in contact with the pad portion 37e.

The communication portion 334f penetrates the third layer 23 in the z direction. The communication portion 334f overlaps with the pad portion 38f when viewed in the z direction, and is connected to the pad portion 38f. The communication portion 334f is in contact with the pad portion 37f.

The communication portion 334g penetrates the third layer 23 in the z direction. The communication portion 334g overlaps with the pad portion 38g when viewed in the z direction, and is connected to the pad portion 38g. The communication portion 334g is in contact with the pad portion 37g.

The communication portion 334h penetrates the third layer 23 in the z direction. The connecting portion 334h overlaps with the pad portion 38h when viewed in the z direction, and is connected to the pad portion 38h. The contact portion 334h is in contact with the pad portion 37h.

In the support 1 of the present embodiment, the first main surface portion 35a and the first back surface portion 32a are electrically connected through the extending portion 351a, the connecting portion 331a, and the extending portion 321a. The second main surface portion 35b and the second back surface portion 32b are electrically connected through the extension portion 351b, the communication portion 331b, and the extension portion 321b. The third main surface portion 35c and the third back surface portion 32c are electrically connected through the extension portion 351c, the communication portion 331c, and the extension portion 321c. The fourth main surface portion 35d and the fourth back surface portion 32d are electrically connected via the extension portion 351d, the connection portion 331d and the extension portion 321d.

Further, in the support 1 of the present embodiment, the pad portion 382e and the fifth back surface portion 32e are composed of the main surface portion 318e, the pad portion 38e, the connection portion 334e, the pad portion 37e, the extension portion 371e, the pad portion 372e, the connection portion 372e, and the connection portion 334e. They are electrically connected through the portion 333e, the pad portion 36e, the connecting portion 332e, the pad portion 31e, and the connecting portion 331e. The pad portion 382f and the sixth back surface portion 32f are composed of the main surface portion 318f, the pad portion 38f, the connecting portion 334f, the pad portion 37f, the extending portion 371f, the pad portion 372f, the connecting portion 333f, the pad portion 36f, the connecting portion 332f, and the pad. Conduction is established via the portion 31f and the communication portion 331f. The pad portion 382g and the seventh back surface portion 32g are composed of a main surface portion 318g, a pad portion 38g, a connecting portion 334g, a pad portion 37g, an extending portion 371g, a pad portion 372g, a connecting portion 333g, a pad portion 36g, a connecting portion 332g, and a pad. It is conducting through the portion 31g and the connecting portion 331g. The pad portion 382h and the eighth rear surface portion 32h are composed of the main surface portion 318h, the pad portion 38h, the connecting portion 334h, the pad portion 37h, the extending portion 371h, the pad portion 372h, the connecting portion 333h, the pad portion 36h, the connecting portion 332h, and the pad. It is conducting through the portion 31h and the connecting portion 331h.

As shown in FIGS. 35 and 37, the cover 5 is supported on the main surface 23a of the third layer 23, and has a fifth surface 24g, a sixth surface 24h, a seventh surface 24i and an eighth surface when viewed in the z direction. Surrounded by 24j. In the cover 5 of this embodiment, the third layer 53 is formed on the main surface 51a of the first layer 51 of the cover 5, and the second layer 52 is formed on the back surface 51b. In the illustrated example, the back surface 51b (second layer 52) is joined to the main surface 23a by a joining material 57, for example. By arranging the bonding material 57 in a plurality of points, gaps are generated between the cover 5 and the third layer 23 at locations where the bonding material 57 is not provided. This gap can perform the same function as the ventilation section 6 described above. Therefore, in this example, the support 1 may not be provided with the vent 6 .

The third layer 53 of the cover 5 and the pad portion 382 e are electrically connected through the conductive bonding material 59 . The third layer 53 and the pad portion 382f are electrically connected through the conductive bonding material 59. As shown in FIG. The third layer 53 and the pad portion 382g are electrically connected through the conductive bonding material 59. As shown in FIG. The third layer 53 and the pad portion 382h are electrically connected through the conductive bonding material 59. As shown in FIG.

According to this embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 .

<Fourth Embodiment First Modification>
44 to 46 show a first modification of the semiconductor light emitting device A4. The semiconductor light-emitting device A41 of this modified example differs from the above-described semiconductor light-emitting device A4 mainly in the configuration of the support 1 and the conduction mode of the cover 5 and the conductive portion 3 .

FIG. 44 is a fragmentary plan view showing the semiconductor light emitting device A41. 45 is a cross-sectional view along the XLV-XLV line in FIG. 44. FIG. FIG. 46 is a plan view showing the substrate 2 of the semiconductor light emitting device A41.

As shown in FIG. 44, in the semiconductor light emitting device A41, the conductive portion 3 is not provided in the fourth layer 24. As shown in FIG. Further, as shown in FIG. 45, the second layer 52 is provided on the main surface 51a of the first layer 51, and the third layer 53 is provided on the back surface 51b. The third layer 53 is electrically connected to the pad portion 372e, the pad portion 372f, the pad portion 372g, and the pad portion 372h through the conductive bonding material 59. As shown in FIG. When an isotropic conductive material such as a paste containing a metal such as Ag or solder is used as the conductive bonding material 59, the 59 bonded to the pad portions 372e, 372f, 372g and 372h is separate from each other. Between these conductive bonding materials 59, gaps may occur between the cover 5 and the main surface 23a. This gap can perform the same function as the ventilation section 6 described above. Therefore, in this example, the support 1 may not be provided with the vent 6 . Conductive paths between the pad portion 372e, the pad portion 372f, the pad portion 372g and the pad portion 372h and the fifth rear surface portion 32e, the sixth rear surface portion 32f, the seventh rear surface portion 32g and the eighth rear surface portion 32h are made of, for example, a semiconductor It is similar to the light emitting device A4.

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 .

<Fourth Embodiment Second Modification>
FIG. 47 shows the first layer 21 of the second modification of the semiconductor light emitting device A4. In this example, the conductive portion 3 includes a plurality of connecting portions 330a. Each of the plurality of communication portions 330a penetrates the first layer 21 in the z-direction. The plurality of connecting portions 330a overlap and are connected to both the first main surface portion 35a and the first back surface portion 32a when viewed in the z direction.

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 . Further, by providing a plurality of connecting portions 330a, it is possible to reduce the resistance of the conduction path to the semiconductor light emitting element 4 mounted on the first main surface portion 35a. In addition, the heat generated from the semiconductor light emitting element 4 can be more smoothly transmitted to the first back surface portion 32a through the connecting portion 330a, and heat dissipation can be promoted.

<Fifth Embodiment>
48 to 50 show a semiconductor light emitting device according to a fifth embodiment of the present disclosure. The semiconductor light-emitting device A5 of this embodiment differs from the above-described embodiments mainly in the configurations of the substrate 2 and the semiconductor light-emitting element 4 .

FIG. 48 is a fragmentary plan view showing the semiconductor light emitting device A5. 49 is a cross-sectional view along line XLIX-XLIX in FIG. 48. FIG. 50 is a cross-sectional view along line LL in FIG. 48. FIG.

The semiconductor light emitting device 4 of this embodiment emits light in the x direction. Such a semiconductor light emitting device 4 is, for example, a semiconductor laser device. Also, the semiconductor light emitting device 4 is mounted on a submount substrate 45 . A representative example of the submount substrate 45 is, for example, those made of ceramics such as Al ₂ O ₃ and AlN.

The support 1 is composed of, for example, an MID (Molded Interconnect Device). In this case, the substrate 2 is made of insulating resin. The conductive portion 3 is made of a metal film formed on the base material 2 .

The substrate 2 of the present embodiment has a main surface 2a, a back surface 2b, a first surface 2c, a second surface 2d, a third surface 2e, a fourth surface 2f, a fifth surface 2g, a sixth surface 2h, and a seventh surface 2i. , an eighth face 2j and a ninth face 2k.

The main surface 2a and the back surface 2b face opposite sides in the z-direction. The main surface 2a of the present embodiment corresponds to an example of the "first main surface" of the present disclosure. The ninth surface 2k faces the same side as the main surface 2a in the z direction. The ninth surface 2k is further away from the back surface 2b than the main surface 2a in the z direction. The ninth surface 2k of the present embodiment corresponds to an example of the "second main surface" of the present disclosure.

The first surface 2c and the second surface 2d face opposite sides in the y direction. The first surface 2c is located between the ninth surface 2k and the back surface 2b in the z-direction, and is connected to the ninth surface 2k and the back surface 2b in the illustrated example. The second surface 2d is located between the ninth surface 2k and the back surface 2b in the z-direction, and is connected to the ninth surface 2k and the back surface 2b in the illustrated example.

The third surface 2e and the fourth surface 2f face opposite sides in the x direction. The third surface 2e is located between the ninth surface 2k and the back surface 2b in the z-direction, and is connected to the ninth surface 2k and the back surface 2b in the illustrated example. The fourth surface 2f is located between the ninth surface 2k and the back surface 2b in the z-direction, and is connected to the ninth surface 2k and the back surface 2b in the illustrated example.

The fifth surface 2g and the sixth surface 2h are positioned between the first surface 2c and the second surface 2d in the y direction. The fifth surface 2g and the sixth surface 2h face opposite sides in the y direction. The fifth surface 2g faces the same side as the second surface 2d. The sixth surface 2h faces the same side as the first surface 2c. The fifth surface 2g is located between the ninth surface 2k and the principal surface 2a in the z-direction, and is connected to the ninth surface 2k and the principal surface 2a in the illustrated example. The sixth surface 2h is located between the ninth surface 2k and the principal surface 2a in the z-direction, and is connected to the ninth surface 2k and the principal surface 2a in the illustrated example.

The seventh surface 2i and the eighth surface 2j are located between the third surface 2e and the fourth surface 2f in the x direction. The seventh surface 2i and the eighth surface 2j face opposite sides in the x direction. The seventh surface 2i faces the same side as the fourth surface 2f. The eighth surface 2j faces the same side as the third surface 2e. The seventh surface 2i is located between the ninth surface 2k and the main surface 2a in the z-direction, and is connected to the ninth surface 2k and the main surface 2a in the illustrated example. The eighth surface 2j is located between the ninth surface 2k and the principal surface 2a in the z-direction, and in the illustrated example is connected to the ninth surface 2k and the principal surface 2a. The seventh surface 2i is inclined with respect to the z direction. The angle formed by the seventh surface 2i with the z-direction is, for example, 30° to 60°, more specifically about 45°.

The conductive portion 3 is formed on the surface of the base material 2 and is made of, for example, an electroless plated layer of Cu, Ni, Au or the like. The conductive portion 3 of the present embodiment includes a main surface portion 31, a back surface portion 32, a connecting portion 33, a seventh surface portion 34i and an eighth surface portion 34j.

The main surface portion 31 includes a first main surface portion 31a and a second main surface portion 31b. The first main surface portion 31a and the second main surface portion 31b are arranged on the main surface 2a. The first main surface portion 31a is in contact with the seventh surface 2i. The second main surface portion 31b is in contact with the eighth surface 2j.

The back surface portion 32 includes a first back surface portion 32a, a second back surface portion 32b, a third back surface portion 32c, and a fourth back surface portion 32d, and is arranged on the back surface 2b. The first back surface portion 32a is in contact with the third surface 2e. The second back surface portion 32b is in contact with the fourth surface 2f. The third back surface portion 32c is in contact with the first surface 2c. The fourth back surface portion 32d is in contact with the second surface 2d.

The communication section 33 includes a 13th communication section 33m, a 14th communication section 33n, a 15th communication section 33o, a 16th communication section 33p, a 17th communication section 33q, an 18th communication section 33r, a 19th communication section 33s and a 20th communication section. Includes part 33t.

The thirteenth communication portion 33m, the fourteenth communication portion 33n, the fifteenth communication portion 33o and the sixteenth communication portion 33p are arranged on the ninth surface 2k. The thirteenth communication portion 33m is in contact with the first surface 2c and the fifth surface 2g. The fourteenth communication portion 33n is in contact with the second surface 2d and the sixth surface 2h. The fifteenth communication portion 33o is in contact with the seventh surface 2i and the third surface 2e. The sixteenth connecting portion 33p is in contact with the fourth surface 2f and the eighth surface 2j.

The seventeenth communication portion 33q is arranged on the first surface 2c and is connected to the thirteenth communication portion 33m and the third rear surface portion 32c. The eighteenth communication portion 33r is arranged on the second surface 2d and is connected to the fourteenth communication portion 33n and the fourth rear surface portion 32d.

The nineteenth communication portion 33s is arranged on the third surface 2e and is connected to the fifteenth communication portion 33o and the first rear surface portion 32a. The twentieth connecting portion 33t is arranged on the fourth surface 2f and is connected to the sixteenth connecting portion 33p and the second back surface portion 32b.

Cover 5 includes first layer 51 , second layer 52 and third layer 53 . The second layer 52 is arranged on the major surface 51a. The third layer 53 is arranged on the back surface 51b.

Both ends of the third layer 53 in the y direction are conductively joined to the 13th communication portion 33m and the 14th connection portion 33n via the conductive bonding material 58 . The fifteenth communication portion 33o and the sixteenth communication portion 33p and the third layer 53 are separated from each other or insulated by providing an insulating material (not shown) therebetween. preferable.

The semiconductor light emitting element 4 is connected to the second main surface portion 31b by a wire 49. As shown in FIG.

In the semiconductor light emitting device A5, the light emitted from the semiconductor light emitting element 4 travels in the x direction and is then reflected by the seventh surface portion 34i (seventh surface 2i). This light is diffused by the cover 5 and emitted from the cover 5 .

According to this embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 from being directly viewed due to the damage of the cover 5 . Further, by appropriately setting the angle of the seventh surface 2i with respect to the z direction, it is possible to change the traveling direction of the light emitted from the semiconductor light emitting device A5.

<Fifth Embodiment First Modification>
FIG. 51 shows a first modification of the semiconductor light emitting device A5. The semiconductor light emitting device A51 of this modified example differs from the embodiment described above mainly in the configuration of the support 1 .

The first layer 21 is made of glass epoxy resin, for example. The second layer 22 is made of epoxy resin or silicone resin, for example, and is formed by die molding, for example.

The conductive portion 3 includes a first communication portion 33a and a second communication portion 33b. The first communication portion 33a and the second communication portion 33b penetrate the first layer 21 in the z-direction. The first communication portion 33a electrically connects 31a and the first back surface portion 32a. The second connecting portion 33b electrically connects the second main surface portion 31b and the second back surface portion 32b.

A metal film 29 is provided on the seventh surface 22i of the second layer 22 . The metal film 29 is a film in which metal such as aluminum is vapor-deposited.

The cover 5 is joined to the main surface 22a. In the illustrated example, the third layer 53 is formed on the first layer 51 15b. Conductive paths between the third layer 53 and the third back surface portion 32c and the fourth back surface portion 32d are formed by, for example, a surface metal layer that is a part of the conductive portion 3 appropriately formed on the second layer 22 and the third layer 23, or through-holes. Consists of a metal part.

According to this modified example, it is also possible to suppress direct viewing of the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 .

<Ventilation part 6 structure example>
52 to 61 show specific structural examples of the ventilation section 6. FIG.

FIG. 52 is an enlarged plan view showing a first structural example of the accommodating portion 7, and FIG. 53 is a cross-sectional view. The housing portion 7 of this example is composed of the groove portion 211 formed in the second layer 22 and the rear surface 23 b of the third layer 23 . The groove 211 of this example has a shape along the x-direction and is parallel to the x-direction. The groove portion 211 is recessed from the main surface 22a and reaches the eighth surface 22j and the fourth surface 22f.

In the illustrated example, the groove 211 has a first side 2111 and two second sides 2112 .

The first surface 2111 is the deepest surface in the z direction of the groove 211 . In the illustrated example, the first surface 2111 is a flat surface perpendicular to the z-direction. The two second surfaces 2112 respectively connect the first surface 2111 and the main surface 22a. In the illustrated example, the two second surfaces 2112 are slightly inclined with respect to the z-direction, but this is not a limitation.

FIG. 54 is an enlarged plan view of a main portion showing a second structural example of the accommodating portion 7. FIG. In the illustrated example, the groove portion 211 forming the ventilation portion 6 has a first surface 2111 , two second surfaces 2112 , a third surface 2113 and a fourth surface 2114 .

The first surface 2111 is the deepest surface in the z direction of the groove 211 . In the illustrated example, the first surface 2111 is a flat surface perpendicular to the z-direction. The two second surfaces 2112 respectively connect the first surface 2111 and the main surface 22a. In the illustrated example, the two second surfaces 2112 are slightly inclined with respect to the z-direction, but this is not a limitation.

The third surface 2113 is interposed between the fourth surface 22f and the second surface 2112 on one side. The third surface 2113 is a convex curved surface when viewed in the z direction. A curved surface similar to the third surface 2113 may be interposed between the fourth surface 22f and the second surface 2112 on the other side.

The fourth surface 2114 is interposed between the eighth surface 22j and the second surface 2112 on the other side. The fourth surface 2114 is a convex curved surface when viewed in the z direction. A curved surface similar to the fourth surface 2114 may be interposed between the inner surface second portion 272 and one of the second surfaces 2112 . In the illustrated example, the y-direction dimensions of the first opening region S1 on the side of the eighth surface 22j and the second opening region S2 on the side of the fourth surface 22f are substantially the same.

Since the ventilation section 6 (groove section 211 ) is provided so as to be inclined with respect to the x-direction, it is possible to extend the path through which an unintended object enters the ventilation section 6 . This is preferable for protecting the semiconductor light emitting element 4 .

FIG. 55 is an enlarged plan view of a main portion showing a third structural example of the ventilation section 6. FIG. The ventilation part 6 of this example differs from the above example in the shape of the groove part 211 as viewed in the z direction. In the groove portion 211 of this example, the y-direction dimension of the first opening region S1 is larger than the y-direction dimension of the second opening region S2. Also, the y-direction dimension of the groove portion 211 decreases from the eighth surface 22j toward the fourth surface 22f. That is, the groove portion 211 has a tapered shape that tapers toward the fourth surface 22f side (outer side) when viewed in the z direction.

Also according to this example, the reliability of the semiconductor light emitting device can be improved. In addition, by reducing the y-direction dimension of the second opening region S2, it is possible to further suppress the intrusion of unintended objects.

FIG. 56 is an enlarged plan view of a main portion showing a fourth structural example of the ventilation section 6. FIG. The ventilation part 6 of this example differs from the above example in the shape of the groove part 211 as viewed in the z direction. In the groove portion 211 of this example, the y-direction dimension of the first opening region S1 is smaller than the y-direction dimension of the second opening region S2. Also, the y-direction dimension of the groove portion 211 increases from the eighth surface 22j toward the fourth surface 22f. That is, the groove portion 211 has a tapered shape that is larger toward the fourth surface 22f side (outer side) when viewed in the z direction.

Also according to this example, the reliability of the semiconductor light emitting device can be improved. Further, by reducing the y-direction dimension of the first opening region S1, even if an unintended object enters the groove 211 (ventilation portion 6) from the fourth surface 22f side (outside), the first opening region S1 can be suppressed from entering the ventilation part 6 at the .

FIG. 57 is an enlarged plan view of a main portion showing a fifth structural example of the ventilation section 6. FIG. In the ventilation part 6 of this example, the groove part 211 is provided adjacent to the fifth surface 22g. Also according to this example, the reliability of the semiconductor light emitting device can be improved.

FIG. 58 is an enlarged plan view of a main portion showing a sixth structural example of the ventilation section 6. FIG. The ventilation part 6 of this example differs from the example which the z direction view shape of the groove part 211 mentioned above. The groove portion 211 of this example has a first portion 211a, a second portion 211b and a third portion 211c. The first portion 211a is connected to the eighth surface 22j and has a shape extending in the x direction. The third portion 211c is connected to the fourth surface 22f and has a shape extending in the x direction. The second portion 211b is connected to the first portion 211a and the third portion 211c and extends in a direction crossing the x direction, for example along the y direction. Such a groove portion 211 has a so-called crank shape in the z direction.

This example can also improve the reliability of the semiconductor light emitting device. Further, by forming the groove portion 211 into a crank shape, unintentional entry of an object can be more reliably suppressed, for example, at the second portion 211b.

FIG. 59 is an enlarged cross-sectional view of a main part showing a seventh structural example of the ventilation section 6. As shown in FIG. In the ventilation part 6 of this example, the groove part 211 has a first surface 2111 , a pair of second surfaces 2112 and a pair of fifth surfaces 2115 .

The first surface 2111 is the deepest surface in the z direction of the groove 211 . In the illustrated example, the first surface 2111 is a flat surface perpendicular to the z-direction. A pair of second surfaces 2112 are connected to the first surface 2111 . The second surface 2112 is inclined with respect to the z direction, for example. The pair of fifth surfaces 2115 are interposed between the first surface 2111 and the pair of second surfaces 2112 . The fifth surface 2115 is a concave curved surface. Also according to this example, the reliability of the semiconductor light emitting device can be improved.

FIG. 60 is an enlarged cross-sectional view of a main part showing an eighth structural example of the ventilation section 6. As shown in FIG. In the ventilation part 6 of this example, the groove part 211 has a sixth surface 2116 . The sixth surface 2116 is a curved surface that is connected to the main surface 22a at both ends in the y direction and is recessed from the main surface 22a toward the other side in the z direction (lower side in the figure). Also according to this example, the reliability of the semiconductor light emitting device can be improved.

FIG. 61 is an enlarged cross-sectional view of a main part showing a ninth structural example of the ventilation section 6. As shown in FIG. In the ventilation part 6 of this example, the groove part 211 has two second surfaces 2112 . The two second surfaces 2112 are each connected to the main surface 22a and connected to each other. The two second surfaces 2112 are tilted with respect to the z direction. Also according to this example, the reliability of the semiconductor light emitting device can be improved.

The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be changed in various ways.

[Appendix 1]
a semiconductor light emitting device;
a support including a substrate and a conductive portion disposed on the substrate and having an opening through which light from the semiconductor light emitting element passes;
A semiconductor light-emitting device comprising a cover that closes the opening when viewed in a first direction,
The cover is made of a first layer that transmits light from the semiconductor light emitting element, a second layer that diffuses light from the semiconductor light emitting element, and a conductive material. A semiconductor light emitting device including a third layer that changes state.
[Appendix 2]
The semiconductor light-emitting device according to Appendix 1, wherein the third layer of the cover transmits light from the semiconductor light-emitting element.
[Appendix 3]
The base material has a first main surface and a back surface facing opposite sides in the first direction, and a second main surface facing the same side as the first main surface and spaced further from the back surface than the first main surface. 3. The semiconductor light emitting device according to appendix 1 or 2, comprising:
[Appendix 4]
3. The semiconductor light emitting device according to appendix 3, wherein the conductive portion includes a main surface portion arranged on the first main surface and a rear surface portion arranged on the rear surface.
[Appendix 5]
5. The semiconductor light emitting device according to appendix 4, wherein the conductive portion includes a cover connecting portion that reaches the second main surface and the back surface and is electrically connected to the back surface portion.
[Appendix 6]
the first layer of the cover has a main surface located opposite to the semiconductor light emitting element in the first direction and a back surface facing the semiconductor light emitting element;
6. The semiconductor light emitting device according to appendix 5, wherein the third layer of the cover is arranged on the back surface of the first layer.
[Appendix 7]
7. The semiconductor light-emitting device according to appendix 6, further comprising a conductive bonding material that electrically connects the cover connecting portion and the third layer.
[Appendix 8]
8. The semiconductor light emitting device according to appendix 7, wherein the cover connecting portion penetrates the base material to reach the second main surface and the back surface.
[Appendix 9]
the first layer of the cover has a main surface of the cover located opposite to the semiconductor light emitting element in the first direction and a back surface of the cover facing the semiconductor light emitting element;
The semiconductor light-emitting device according to appendix 8, wherein the third layer of the cover is arranged on the rear surface of the cover of the first layer.
[Appendix 10]
10. The semiconductor light-emitting device according to appendix 9, further comprising a conductive bonding material that electrically connects the cover connecting portion and the third layer.
[Appendix 11]
The base material has a concave portion reaching the second main surface and the back surface,
11. The semiconductor light emitting device according to appendix 10, wherein the cover connecting portion is arranged on the recess.
[Appendix 12]
12. The semiconductor light emitting device according to any one of appendices 6 to 11, wherein the base has an inner surface surrounding the cover in a direction perpendicular to the first direction.
[Appendix 13]
9. The semiconductor device according to any one of appendices 6 to 8, wherein the base has an outer surface that matches an outer edge of the cover when viewed in the first direction.
[Appendix 14]
14. The conductive portion according to any one of Appendices 4 to 13, wherein the conductive portion includes an element connecting portion connecting the main surface portion and the back surface portion and penetrating the base material to reach the first main surface and the back surface. semiconductor equipment.
[Appendix 15]
15. The semiconductor device according to any one of appendices 1 to 14, wherein the base material has an accommodating portion that accommodates the semiconductor light emitting element and a ventilation portion that connects the accommodating portion and the outside.
[Appendix 16]
16. The semiconductor device according to any one of appendices 1 to 15, wherein the semiconductor light emitting element is a semiconductor laser element.
[Appendix 17]
17. The semiconductor device according to appendix 16, wherein the semiconductor light emitting element is a VCSEL element.

A1, A11, A12, A13 A2, A3, A4, A41, A5: semiconductor light emitting device 1: support 2: base material 2a: main surface 2b: back surface 2c: first surface 2d: second surface 2e: third surface 2f : 4th surface 2g : 5th surface 2h : 6th surface 2i : 7th surface 2j : 8th surface 2k : 9th surface 3 : conductive portion 4 : semiconductor light emitting element 5 : cover 6 : ventilation portion 7 : housing portion 8 : Light receiving element 10 : Support 20 : Base material 21 : First layer 21a : Main surface 21b : Back surface 21c : First surface 21d : Second surface 21e : Third surface 21f : Fourth surface 22 : Second layer 22a : Principal surface 22b: Back surface 22c: First surface 22d: Second surface 22e: Third surface 22f: Fourth surface 22g: Fifth surface 22h: Sixth surface 22i: Seventh surface 22j: Eighth surface 23: Third layer 23a: Main surface 23b: Back surface 23c: First surface 23d: Second surface 23e: Third surface 23f: Fourth surface 23g: Fifth surface 23h: Sixth surface 23i: Seventh surface 23j: Eighth surface 24: Third surface 4 layers 24a: main surface 24b: back surface 24c: first surface 24d: second surface 24e: third surface 24f: fourth surface 24g: fifth surface 24h: sixth surface 24i: seventh surface 24j: eighth surface 26i : concave portion 26j : concave portion 26k : concave portion 26l : concave portion 27 : opening portion 28 : concave portion 30 : conductive portion 31 : main surface portion 31a : first main surface portion 31b : second main surface portion 31c : third main surface portion 31d : fourth main surface portion 32: back surface portion 32a: first back surface portion 32b: second back surface portion 32c: third back surface portion 32d: fourth back surface portion 32e: fifth back surface portion 32f: sixth back surface portion 32g: seventh back surface portion 32h: eighth Back surface portion 32i: Ninth back surface portion 33: Contact portion 33a: First contact portion 33b: Second contact portion 33c: Third contact portion 33d: Fourth contact portion 33e: Fifth contact portion 33f: Sixth contact portion 33g: Seventh contact portion 33h: Eighth contact portion 33i: Ninth contact portion 33j: Tenth contact portion 33k: Eleventh contact portion 33l: Twelfth contact portion 33m: Thirteenth contact portion 33n: Fourteenth contact portion 33o: Fifteenth contact portion Contact portion 33p: 16th contact portion 33q: 17th contact portion 33r: 18th contact portion 33s: 19th contact portion 33t: 20th contact portion 34i: 7th surface portion 34j: 8th surface portion 41: 1st electrode 42: 1st electrode 42 Two electrodes 48 : Submount substrate 49 : Wire 50 : Cover material 51 : First layer 51A : First layer 51B : First layer 51a : Main surface 51b : Back surface 51c : Second layer 1st surface 51d : 2nd surface 51e : 3rd surface 51f : 4th surface 52 : 2nd layer 53 : 3rd layer 57 : Bonding material 58 : Conductive bonding material 59 : Conductive bonding material 89 : Wire 210 : First Layer 211 : groove portion 211a : first portion 211b : second portion 211c : third portion 220 : second layer 230 : third layer 240 : fourth layer 260k : through hole 260l : through hole 272 : inner side second portion 280 : Through hole 330k : Eleventh communication portion 330l : Twelfth communication portion 451 : Second substrate 452 : Fourth semiconductor layer 453 : Active layer 454 : Fifth semiconductor layer 455 : Current confinement layer 456 : Insulating layer 457 : Conductive layer 460 : Light-emitting region 510 : First layer 520 : Second layer 530 : Third layer 531 : First part 532 : Second part 2111 : First surface 2112 : Second surface 2113 : Third surface 2114 : Fourth surface 2115 : Fifth surface 2116 : Sixth surface 4551 : Opening 4561 : Opening 4571 : Opening C1 : Electronic device Ct : Controller DL : Parting line S1 : First opening area S2 : Second opening area

Claims (15)

a semiconductor light emitting device;
a support including a substrate and a conductive portion disposed on the substrate and having an opening through which light from the semiconductor light emitting element passes;
a semiconductor light emitting device comprising: a cover that closes the opening when viewed in a first direction ;
An electronic device comprising a controller ,
The cover is made of a first layer that transmits light from the semiconductor light emitting element, a second layer that diffuses light from the semiconductor light emitting element, and a conductive material. including a third layer that changes state;
The base material has a first main surface and a back surface facing opposite sides in the first direction, and a second main surface facing the same side as the first main surface and spaced further from the back surface than the first main surface. and
The conductive portion includes a main surface portion arranged on the first main surface, a back surface portion arranged on the back surface, and a cover connecting portion reaching the second main surface and the back surface and conducting to the back surface. and including
The first layer has a rectangular shape having first to fourth sides when viewed in the first direction,
the third layer has first to fourth portions along the first to fourth sides individually;
the conductive portion includes first to fourth cover contact portions that form a plurality of the cover contact portions;
The first to fourth cover connecting portions are individually connected to the first to fourth portions,
The electronic device , wherein the controller performs light emission control of the semiconductor light emitting element and detection control of the conduction state of the third layer . 2. The semiconductor light-emitting device according to claim 1, wherein said third layer of said cover transmits light from said semiconductor light-emitting element. 3. The electronic device according to claim 2, wherein said third layer surrounds said semiconductor light emitting element when viewed from said first direction, and does not overlap with said semiconductor light emitting element. The third layer includes a plurality of the first to fourth parts,
In the third layer, the plurality of first to fourth parts are arranged substantially parallel to each other and have spiral shapes extending from the outside to the inside by sequentially connecting the ends of the first to fourth parts. 3. The structure according to claim 2, wherein the configuration includes a first spiral portion and a second spiral portion that are folded together, and a folded portion that connects the inner ends of the first spiral portion and the second spiral portion. electronics . the first layer of the cover has a main surface of the cover located opposite to the semiconductor light emitting element in the first direction and a back surface of the cover facing the semiconductor light emitting element;
5. The electronic device according to claim 1, wherein said third layer of said cover is arranged on the rear surface of said cover of said first layer. 6. The electronic device according to claim 5, further comprising a conductive bonding material that electrically connects said cover connecting portion and said third layer. 7. The electronic device according to claim 6, wherein said cover connecting portion penetrates said base material so as to reach said second main surface and said back surface. The base material has a concave portion reaching the second main surface and the back surface,
7. The electronic device according to claim 6, wherein said cover contact portion is arranged on said recess. 9. The electronic device according to any one of claims 1 to 8, wherein said base material has an inner surface surrounding said cover in a direction perpendicular to said first direction. The electronic device according to any one of claims 1 to 7, wherein the base material has an outer surface that matches an outer edge of the cover when viewed from the first direction. 11. The conductive portion according to any one of claims 1 to 10, wherein the conductive portion includes an element connecting portion connecting the main surface portion and the back surface portion and penetrating the base material to reach the first main surface and the back surface. Electronics as described. 12. The electronic device according to any one of claims 1 to 11, wherein said base material has an accommodating portion that accommodates said semiconductor light emitting element and a ventilation portion that connects said accommodating portion with the outside. 13. The electronic device according to claim 1, wherein said semiconductor light emitting device is a semiconductor laser device. 14. The electronic device according to claim 13, wherein said semiconductor light emitting device is a VCSEL device. a semiconductor light emitting device;
a support including a substrate and a conductive portion disposed on the substrate and having an opening through which light from the semiconductor light emitting element passes;
a semiconductor light emitting device comprising: a cover that closes the opening when viewed in a first direction ;
An electronic device comprising a controller ,
The cover is made of a first layer that transmits light from the semiconductor light emitting element, a second layer that diffuses light from the semiconductor light emitting element, and a conductive material. including a third layer that changes state;
The base material has an accommodating portion that accommodates the semiconductor light emitting element and a ventilation portion that connects the accommodating portion and the outside,
The electronic device , wherein the controller performs light emission control of the semiconductor light emitting element and detection control of the conduction state of the third layer .

Images