CN101436634B - Photosemiconductor package, manufacturing method thereof and photoelectric sensor equipped therewith - Google Patents
Photosemiconductor package, manufacturing method thereof and photoelectric sensor equipped therewith Download PDFInfo
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- CN101436634B CN101436634B CN2008101766614A CN200810176661A CN101436634B CN 101436634 B CN101436634 B CN 101436634B CN 2008101766614 A CN2008101766614 A CN 2008101766614A CN 200810176661 A CN200810176661 A CN 200810176661A CN 101436634 B CN101436634 B CN 101436634B
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention provides a photo-semiconductor package, the preparation method thereof and a photoelectric sensor with the package. The high-performance and high reliability package can be made small and thin with high production efficiency while trying to improve the light-extracting efficiency from the packaging. The photo-semiconductor package (1A) is provided with a LED chip (30) and an internal inserting plate (10) with the LED chip. The LED chip is arranged on the internal inserting plate through a reflector (20) loaded on the internal inserting plate. The reflector is provided with a plate-shaped bottom (21); a conical-shaped lateral part (22) with a diameter becoming wider and wider from the surrounding bottom to the top with continuous extension; an admission room (24) with an opening on the top determined by the bottom and the lateral part. The wall used for determining the room can reflect the irradiation beam and the LED chip is arranged on the bottom of the admission room of the reflector.
Description
Technical field
The present invention relates to light-projecting component or photo detector being the photosemiconductor encapsulation (optical semiconductor package) of carrying out encapsulation process of the optical semiconductor of representative, the manufacture method that has the photoelectric sensor of this photosemiconductor encapsulation and be used to make this photosemiconductor encapsulation.
Background technology
In recent years, along with for the miniaturization of electronic instrument and the requirement of slimming, surface mounted device (Surface Mount Devices) receives publicity.Comprise with light-projecting component or photo detector being that the photoelectric sensor of optical semiconductor of representative is no exception, studying the various encapsulating structures that can carry out mounted on surface for optical semiconductor.
Usually, photoelectric sensor not only will satisfy the miniaturization of aforesaid device and the requirement of slimming, detects the requirement that distance is elongated and can detect more small parts etc. but also will satisfy to make.In order to satisfy these requirements, except the miniaturization and slimming that will realize being loaded in the photosemiconductor encapsulation on the photoelectric sensor, also under situation about constituting like this, make the enough detection light of light projector quantity of light emission.That is, make every effort to improve the detection light that takes out from the photosemiconductor encapsulation get optical efficiency (Light ExtractionEfficiency) in, also to realize the miniaturization and the slimming of photosemiconductor encapsulation.
A solution as this requirement of reply has the method for utilizing reflector (reflection part).So-called reflector is meant, for (Light-Emitting Diode: the light that penetrates of the chip direction of regulation that leads expeditiously Light-Emitting Diode), the light reflection of penetrating in the direction that makes from the light of led chip with radial ejaculation not towards afore mentioned rules is with the optics of the direction of guiding afore mentioned rules with LED.By in the photosemiconductor encapsulation, loading this reflector, can increase substantially the optical efficiency of getting of above-mentioned detection light.
As disclosing a kind of document that is mounted with the photosemiconductor encapsulation of this reflector, TOHKEMY 2001-177155 communique (patent documentation 1) etc. is for example arranged.
In above-mentioned patent documentation 1, photosemiconductor encapsulation with following structure is disclosed, promptly, on substrate, led chip is installed as basis material, on substrate, the cartridge (being equivalent to reflector) that inner peripheral surface is cone shape is set, and utilizes resin-sealed layer sealing by the space that this cartridge and substrate determined in the mode of surrounding this led chip.
Patent documentation 1:JP spy opens the 2001-177155 communique
In the photosemiconductor encapsulation that above-mentioned patent documentation 1 is put down in writing, adopt inner peripheral surface to be the cartridge of cone shape as reflector.Adopting under the situation of this cartridge as reflector,, therefore helping to realize the slimming of photosemiconductor encapsulation owing to load this led chip at substrate self.Yet, there is such problem, that is, adopting under the situation of this encapsulating structure, because being used for determining part bottom surface (the being substrate surface) part of taking in the space of led chip not bring into play the effect of reflecting surface, so cause substantially improving ejaculation efficient.In addition, if see this encapsulating structure on the viewpoint of making, then have such problem, that is, led chip and cartridge need be located respectively and be loaded on the substrate, its result causes the positioning accuracy between led chip and the cartridge to descend.
Summary of the invention
Therefore, the present invention makes in order to address the above problem, its purpose is, make every effort to improve the optical efficiency of getting of taking out light from the photosemiconductor encapsulation, simultaneously can manufacture the photosemiconductor encapsulation of high-performance and high reliability small-sized and slim with high efficiency, in addition, can provide more small-sized and high performance photoelectric sensor thus.
Have optical semiconductor and basis material based on photosemiconductor encapsulation of the present invention, this optical semiconductor is used for light projector or is subjected to light, and above-mentioned optical semiconductor is installed on this basis material.Above-mentioned optical semiconductor is loaded on the above-mentioned basis material across the element loading part, and this element loading part directly is loaded on the above-mentioned basis material.The said elements loading part comprise flat bottom, from the continuous extension of the periphery of this bottom and more to the tabular sidepiece of the top roughly circular cone that then diameter is big more, above opening and by the receiving room of above-mentioned bottom and above-mentioned sidepiece defined.Be used to determine that the wall of above-mentioned receiving room can reflect the light that is shone.Above-mentioned optical semiconductor is loaded on the above-mentioned bottom in the above-mentioned receiving room of said elements loading part.
Above-mentioned preferably, the thickness of above-mentioned bottom and above-mentioned sidepiece is equal in fact based on photosemiconductor encapsulation of the present invention, and the thickness of these bottoms and sidepiece is all below 0.3mm at this moment.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, the said elements loading part also comprises flange part, this flange part extends laterally continuously from a side end of above-mentioned sidepiece, wherein, an above-mentioned side end is meant, with the end of the opposite side in end of above-mentioned bottom one side of above-mentioned sidepiece.
Above-mentioned preferably, the thickness of above-mentioned bottom, above-mentioned sidepiece and above-mentioned flange part is equal in fact based on photosemiconductor encapsulation of the present invention, and at this moment, the thickness of these bottoms, sidepiece and flange part is all below 0.3mm.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, the said elements loading part is by metal plate-like parts are carried out the drawing product that punch process forms.
Above-mentioned based on photosemiconductor of the present invention encapsulation, preferably, the bonding line of above-mentioned optical semiconductor by drawing via opening above said elements loading part above-mentioned is electrically connected with circuit on being located at above-mentioned basis material.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, above-mentioned optical semiconductor is bonded on the said elements loading part across the insulation adhesive layer.At this moment, more preferably, above-mentioned insulation adhesive layer is made of the tack coat that contains the light-transmissive resin material.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, the said elements loading part is bonded on the above-mentioned basis material across the insulation adhesive layer.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, be used to determine that the above-mentioned wall of above-mentioned receiving room is covered by first coverlay, and the reflectivity of this wall of luminance factor of this first coverlay is big.At this moment, more preferably, above-mentioned first coverlay is the plated film of metal material or resin material.
In addition, above-mentioned first coverlay can be the metal plating film, and at this moment, preferably, above-mentioned metal plating film contains more than one the metal that is selected from the group of being made up of tin, silver, nickel and gold.
Above-mentioned preferably, the said elements loading part is made of conductive component based on photosemiconductor of the present invention encapsulation, and at this moment, above-mentioned optical semiconductor is electrically connected with circuit on being located at above-mentioned basis material by the said elements loading part.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, above-mentioned optical semiconductor is bonded on the said elements loading part by welding material, conductive adhesive or conductive paste, in addition, the said elements loading part is bonded on the above-mentioned basis material by welding material, conductive adhesive or conductive paste.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, that states the element loading part is covered by second coverlay with the bonding adhesive surface of above-mentioned optical semiconductor, and wherein, this second coverlay is used to reduce the contact resistance between above-mentioned optical semiconductor and the said elements loading part.At this moment, preferably, above-mentioned second coverlay also covers the part except above-mentioned adhesive surface on the above-mentioned wall that is used to determine above-mentioned receiving room, and at this moment, the luminance factor of above-mentioned second coverlay is used to determine that the reflectivity of above-mentioned wall of above-mentioned receiving room is big.And then, above-mentioned second coverlay can also cover the said elements loading part with the bonding adhesive surface of above-mentioned basis material.
In addition, preferably, above-mentioned second coverlay is the metal plating film, and at this moment, above-mentioned metal plating film contains more than one the metal that is selected from the group of being made up of tin, silver, nickel and gold.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably,, passive component or active element are installed in the part except the part that is mounted with the said elements loading part on the above-mentioned basis material.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, above-mentioned optical semiconductor is by light-transmissive resin sealed layer sealing.
Above-mentioned based on photosemiconductor encapsulation of the present invention, preferably, above-mentioned light-transmissive resin sealed layer seals all parts on the interarea that is installed in above-mentioned basis material, wherein, this interarea is meant, the face of the side that above-mentioned optical semiconductor is installed of above-mentioned basis material.
Above-mentioned based on photosemiconductor encapsulation of the present invention, above-mentioned resin-sealed layer can comprise lens section, and this lens section is positioned at and corresponding position, the position of above-mentioned optical semiconductor.
Above-mentioned based on photosemiconductor encapsulation of the present invention, the said elements loading part has extension, this extension extends and arrives the side of above-mentioned resin-sealed layer laterally continuously from a side end of above-mentioned sidepiece, wherein, an above-mentioned side end is meant, with the end of the opposite side of above-mentioned bottom one side of above-mentioned sidepiece.
Above-mentionedly on above-mentioned basis material, can be mounted with a plurality of said elements loading parts, wherein, be mounted with above-mentioned optical semiconductor on the said elements loading part based on photosemiconductor of the present invention encapsulation.
Has above-mentioned any one photosemiconductor encapsulation based on photoelectric sensor of the present invention.
The manufacture method of the photosemiconductor of a first aspect of the present invention encapsulation is the method that is used to make the photosemiconductor encapsulation of the invention described above, comprising: the step of preparing metal plate-like parts; Above-mentioned plate-shaped member is carried out punch process, form the step of said elements loading part with this; The said elements loading part is loaded in step on the above-mentioned basis material.
The manufacture method of the photosemiconductor of a second aspect of the present invention encapsulation is used for being manufactured on the surface of photosemiconductor encapsulation element loading part of the invention described above by the photosemiconductor encapsulation that above-mentioned first coverlay covers, and comprising: the step of preparing metal plate-like parts; On the surface of above-mentioned plate-shaped member, form the step of above-mentioned first coverlay; The above-mentioned plate-shaped member that is formed with above-mentioned first coverlay is carried out punch process, form the step of said elements loading part with this; The said elements loading part is loaded in step on the above-mentioned basis material.
The manufacture method of the photosemiconductor of a third aspect of the present invention encapsulation is used for being manufactured on the surface of photosemiconductor encapsulation element loading part of the invention described above by the photosemiconductor encapsulation that above-mentioned first coverlay covers, and comprising: the step of preparing metal plate-like parts; Above-mentioned plate-shaped member is carried out punch process, and the surface of the plate-shaped member after this punch process forms above-mentioned first coverlay, forms the step of said elements loading part with this; The said elements loading part is loaded in step on the above-mentioned basis material.
The manufacture method of the photosemiconductor of a fourth aspect of the present invention encapsulation is used for being manufactured on the surface of photosemiconductor encapsulation element loading part of the invention described above by the photosemiconductor encapsulation that above-mentioned second coverlay covers, and comprising: the step of preparing metal plate-like parts; On the surface of above-mentioned plate-shaped member, form the step of above-mentioned second coverlay; The above-mentioned plate-shaped member that is formed with above-mentioned second coverlay is carried out punch process, form the step of said elements loading part with this; The said elements loading part is loaded in step on the above-mentioned basis material.
The manufacture method of the photosemiconductor of a fifth aspect of the present invention encapsulation is used for being manufactured on the surface of photosemiconductor encapsulation element loading part of the invention described above by the photosemiconductor encapsulation that above-mentioned second coverlay covers, and comprising: the step of preparing metal plate-like parts; Above-mentioned plate-shaped member is carried out punch process, on the surface of this plate-shaped member after the punch process, form above-mentioned second coverlay, form the step of said elements loading part with this; The said elements loading part is loaded in step on the above-mentioned basis material.
According to the present invention, not only can improve the optical efficiency of getting of taking out light from photosemiconductor encapsulation, and can manufacture the photosemiconductor encapsulation of high-performance and high reliability small-sized and slim with high efficiency.
Description of drawings
Fig. 1 is the schematic perspective view of surface structure of the photosemiconductor encapsulation of expression first embodiment of the invention.
Fig. 2 is the figure of the internal structure of expression photosemiconductor shown in Figure 1 encapsulation, is the schematic cross sectional views of II-II line shown in Figure 1.
Fig. 3 A, Fig. 3 B are respectively the vertical view and the cutaway views of expression reflector shape shown in Figure 1.
Fig. 4 A～Fig. 4 D is the process chart of the manufacture method of the reflector shown in presentation graphs 3A, Fig. 3 B.
Fig. 5 A～Fig. 5 E is the process chart of manufacture method of the photosemiconductor encapsulation of expression first embodiment of the invention.
Fig. 6 is the cutaway view of installation base plate that the photosemiconductor encapsulation of first embodiment of the invention has been installed.
Fig. 7 is the exploded perspective view of package assembly of light projector of the photoelectric sensor of expression first embodiment of the invention.
Fig. 8 is the schematic perspective view of first variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Fig. 9 is the schematic cross sectional views of second variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Figure 10 is the schematic cross sectional views of the 3rd variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Figure 11 is the schematic plan of the 4th variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Figure 12 is the schematic plan of the 5th variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Figure 13 is the schematic plan of the 6th variation of the photosemiconductor encapsulation of expression first embodiment of the invention.
Figure 14 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression second embodiment of the invention.
Figure 15 is the process chart of manufacture method that is used to illustrate the photosemiconductor encapsulation of third embodiment of the invention.
Figure 16 A～Figure 16 E is the vertical view of expression employed reflector shape in manufacture process when adopting manufacture method shown in Figure 15.
Figure 17 is the schematic plan that expression utilizes a photosemiconductor encapsulation of manufacture method manufacturing shown in Figure 15.
Figure 18 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression four embodiment of the invention.
Figure 19 A～Figure 19 D is the process chart of the manufacture method of expression reflector shown in Figure 180.
Figure 20 A～Figure 20 E is the process chart of other example of the manufacture method of expression reflector shown in Figure 180.
Figure 21 A, Figure 21 B are the process charts of manufacture method of the reflector of expression first comparative example.
Figure 22 A, Figure 22 B are the process charts of manufacture method of the reflector of expression second comparative example.
Figure 23 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression fifth embodiment of the invention.
Embodiment
Below, with reference to accompanying drawing, describe embodiments of the present invention in detail.In addition, in the described below execution mode,, illustrate the photosemiconductor encapsulation of on the light projector of photoelectric sensor, assembling especially as the photosemiconductor encapsulation.
(first execution mode)
Fig. 1 is the schematic perspective view of surface structure of the photosemiconductor encapsulation of expression first embodiment of the invention.Fig. 2 is the figure of the internal structure of expression photosemiconductor shown in Figure 1 encapsulation, is the schematic cross sectional views of II-II line shown in Figure 1.In addition, Fig. 3 A, Fig. 3 B are the figure of the shape of expression reflector shown in Figure 1, and wherein, Fig. 3 A is a vertical view, and the B of Fig. 3 is a cutaway view.At first, referring to figs. 1 through Fig. 3 B, the structure of the photosemiconductor of first embodiment of the invention encapsulation is described.
As depicted in figs. 1 and 2, the profile of the photosemiconductor of present embodiment encapsulation 1A is rectangular shape roughly, is a kind of electronic unit that can carry out mounted on surface to installation base plate.Photosemiconductor encapsulation 1A mainly comprises: as the built-in inserted plate (interposer) 10 of basis material, the reflector 20 as the element loading part, the led chip 30 as optical semiconductor, resin-sealed layer 60.
Built-in inserted plate 10 for example is made of the flat printed circuit board of essentially rectangular.As this printed circuit board, preferentially use organic substrate of epoxy glass substrate etc.Be formed with pad 11 on the first type surface 10a of built-in inserted plate 10, this pad 11 is electrically connected with the pad 13 at the back side that is formed on built-in inserted plate 10 via the through hole (throughhole) 12 that forms in the mode that connects built-in inserted plate 10.In addition, preferentially adopt thickness to be roughly built-in inserted plate 10 about 0.1mm～0.8mm.
On the first type surface 10a of built-in inserted plate 10, be mounted with reflector 20.More particularly, reflector 20 is bonded on the built-in inserted plate 10 across tack coat 41, and wherein, this tack coat 41 is layers that the adhesive cures with insulation characterisitic or conductive characteristic as die-bond material is formed.
As depicted in figs. 1 and 2, reflector 20 is made of the parts that the cone shape shape in the end is roughly arranged, and more particularly, shown in Fig. 3 A and Fig. 3 B, has bottom 21, sidepiece 22 and flange part 23.See that from above bottom 21 has circular flat shape, its upper surface and lower surface almost parallel.Sidepiece 22 has from the bottom 21 continuous extension of periphery and the tabular shape of roughly circular cone that then diameter is big more to the top more, and inner circumferential surface and outer peripheral face almost parallel.Flange part 23 extends laterally continuously from a side end of sidepiece 22, and its upper surface and lower surface almost parallel, and wherein, an above-mentioned side end is meant, the end of sidepiece 22 and the opposite sides in end bottom 21 1 sides.
With reference to Fig. 3 B, the bottom 21 of reflector 20, sidepiece 22 and flange part 23 thickness t 1, t2 and t3 separately in fact equates.This thickness is preferably below the 0.3mm, more preferably in the scope of 0.05mm～0.1mm.In addition, the angle θ that become with sidepiece 22 of bottom 21 is roughly in 20 °～70 ° scope.
As depicted in figs. 1 and 2, in the receiving room 24 of reflector 20, taken in led chip 30.More particularly, led chip 30 is bonded in across tack coat 42 on the bottom 21 of reflector 20, and wherein, this tack coat 42 is layers that the adhesive cures with insulation characterisitic or conductive characteristic as die-bond material is formed.Led chip 30 is equivalent to the light source with radial ejaculation light.
Upper surface at led chip 30 is formed with not shown pair of electrodes (anode (anode) and negative electrode (cathode)), and this a pair of electrode is electrically connected with pad 11 on the first type surface 10a that is located at built-in inserted plate 10 by bonding line (bonding wire) 50 respectively.At this, with bonding line 50 from the upper surface of led chip 30 via opening above the reflector 20, draw to the outside of reflector 20 with ring (loop) shape, and bonding line 50 is in contactless state with reflector 20.The bonding line 50 preferential gold threads that use.
On the first type surface 10a of built-in inserted plate 10, be formed with resin-sealed layer 60.Resin-sealed layer 60 is made of the light-transmissive resin parts, and above-mentioned reflector 20, led chip 30, bonding line 50 etc. are sealed in its inside.More particularly, resin-sealed layer 60 forms the resin material of for example excellent line use epoxy resin etc. by the resin material that can make the emitted light transmission of led chip 30.
By adopting the encapsulating structure of above structure, can leap the optical efficiency of getting that raising is taken out light from photosemiconductor encapsulation 1A.This be because, as shown in Figure 2, in the light that led chip 30 penetrates, the light that can penetrate to the side reflexes to the top by the inner peripheral surface of the sidepiece 22 of reflector 20, can increase thus from the light quantity of photosemiconductor encapsulation 1A ejaculation.In addition, as long as the profile of the bottom 21 of reflector 20 is arranged to bigger, then in the light that led chip 30 penetrates, also the light that penetrates can be reflexed to the top by the upper surface of the bottom 21 of reflector 20 downwards than the profile of led chip 30.In addition, if utilize the binding agent that constitutes by the light-transmissive resin material to constitute tack coat 42, the light that penetrates is more effectively penetrated upward downwards.Therefore, if adopt such structure, then can further improve the optical efficiency of getting of taking out light from photosemiconductor encapsulation 1A.As mentioned above, encapsulate the light projector of 1A, can on following performance, improve: make the detection distance of photoelectric sensor elongated as photoelectric sensor by the photosemiconductor that uses said structure; Realization is for the more detection of micro-element.
In addition, in the encapsulating structure of said structure,, therefore help to realize the slimming of photoelectric sensor owing to can make the thickness of photosemiconductor encapsulation 1A extremely thin.And then, because being shaped as of reflector 20 roughly have end cone shape, therefore can below the sidepiece 22 of reflector 20 and flange part 23, form wiring pattern or other installing component (for example passive component, active element) is installed.Therefore, compare, can improve packing density, thereby can realize miniaturization, and help to realize the miniaturization of photoelectric sensor with photosemiconductor encapsulation in the past.
In addition, in the encapsulating structure of said structure, reflector 20 shared volumes are compared significantly with photosemiconductor encapsulation in the past and are reduced, therefore caused the peeling off of coefficient of linear expansion difference at the interface between resin-sealed layer 60 and the reflector 20 can be suppressed to take place, thereby reliability can be increased substantially.Therefore, help to improve the reliability of photoelectric sensor.
And then, by adopting aforesaid encapsulating structure, the manufacturing of reflector is become easily, thereby can enhance productivity, and can subdue manufacturing cost.Below, describe at the manufacture method of the photosemiconductor of present embodiment encapsulation, and the manufacturing of reflector become be easy to reason and be elaborated.
Fig. 4 A～Fig. 4 D is the process chart of the manufacture method of the above-mentioned reflector of expression.At first, with reference to Fig. 4 A～Fig. 4 D, the manufacture method of reflector is described.Shown in Fig. 4 A～Fig. 4 D, the preferential punch process of using when making reflector 20.
At first, shown in Fig. 4 A, metal plate-like parts 300 are set on stamping machine, wherein, this stamping machine has at counterdie 201 that has formed a plurality of recess 201a on the stamping surface and the patrix 202 that formed a plurality of protuberance 202a on stamping surface.At this, being arranged on metal plate-like parts 300 on the stamping machine becomes reflector 20 after through processing, so this metal plate-like parts 300 are preferential adopts the plate-shaped member that is made of above-mentioned copper, copper alloy, aluminium, aluminium alloy etc., and its thickness of slab is below 0.3mm.
Then, shown in Fig. 4 B, utilize counterdie 201 and patrix 202 to come the tabular parts 300 of stamped metal.Handle by this punching press, plastic deformations take place in metal plate-like parts 300, and become along the shape of the stamping surface of the counterdie 201 of stamping machine and patrix 202.Then, shown in Fig. 4 C, take out metal plate-like parts 300,, thereby produce reflector 20 shown in Fig. 4 D along the 400 cutting metal plate-shaped members 300 of the line of cut shown in Fig. 4 C from stamping machine.In addition, utilize above-mentioned this counterdie and patrix to carry out the punching press processing, can once obtain a large amount of reflectors in high efficiency ground with a plurality of recesses and protuberance.
In above-mentioned punching press is handled, utilize the metal plate-like parts of thin thickness to make the shape of reflector.Therefore, can make the shape of reflector easily, even, also can reproduce its shape accurately as the reflector of micro-element.In addition, also realize the slimming of reflector bottom easily.Its result can make small-sized and slim reflector at an easy rate.
Fig. 5 A～Fig. 5 E is the process chart of manufacture method of the photosemiconductor encapsulation of expression present embodiment.Next, with reference to this Fig. 5 A～Fig. 5 E, the manufacture method of the photosemiconductor of present embodiment encapsulation is described.
When the photosemiconductor encapsulation of making present embodiment, shown in Fig. 5 A, at first, prepared to be pre-formed the built-in inserted plate 10 of the circuit pattern of regulation, and utilized resin system binding agent to load reflector 20 thereon.Then, shown in Fig. 5 B, on the bottom 21 of reflector 20, utilize resin system binding agent to load led chip 30.In addition, also can load led chip 30 in advance on reflector 20, the reflector 20 that will load led chip 30 then is loaded on the built-in inserted plate 10.
Then, shown in Fig. 5 C, utilize bonding line 50 that the electrode of led chip 30 is connected with the pad 11 of built-in inserted plate 10.Then, shown in Fig. 5 D, utilize the light-transmissive resin material to carry out revolving die (Transfer-molding) and handle, utilize 60 pairs of various parts that is loaded on the built-in inserted plate 10 of resin-sealed layer to seal.Then, carry out cutting process, thereby obtain the photosemiconductor encapsulation 1A shown in Fig. 5 E along the line of cut shown in Fig. 5 D 401.
By adopting above-mentioned manufacture method, can be in small-sized and slim mode, the photosemiconductor encapsulation of high-performance and high reliability is made on high efficiency ground.
Then, the photoelectric sensor that the photosemiconductor with said structure is encapsulated is elaborated.Fig. 6 is the cutaway view of installation base plate that the photosemiconductor encapsulation of present embodiment has been installed, and Fig. 7 is the exploded perspective view of package assembly of light projector of the photoelectric sensor of expression present embodiment.
As shown in Figure 6, the photosemiconductor of present embodiment encapsulation 1A can be surface mounted on the installation base plate 70.Lower surface at photosemiconductor encapsulation 1A is formed with pad 13.Therefore, utilize adhesive layers 90 such as scolding tin, this pad 13 is bonding with the pad 71 that is located on the installation base plate 70, thereby being encapsulated 1A, photosemiconductor is surface mounted on the installation base plate.In addition, on installation base plate 70, also can other electronic unit of mounted on surface (electronic unit shown in the Reference numeral 81～83 for example shown in Figure 6).
Mounted on surface the installation base plate 70 of this photosemiconductor encapsulation 1A for example be assembled on the light projector of photoelectric sensor.As shown in Figure 7, installation base plate 70 is taken in and is fixed on the inside of the housing 110 of box shape with top opening.Lid 120 is installed on housing 110, and this lid 120 has sealed the top opening of housing 110.With regard to lid 120, need to form by light transmissive material to its substantial middle portion of major general, the light that makes led chip 30 send can project the outside of light projector 100.Material optimization polycarbonate (polycarbonate) resin of lid 120, acrylic resin, polyarylization (polyarylate) resin etc.
By making the photoelectric sensor of light projector, can realize small-sized and high performance photoelectric sensor with said structure.
Fig. 8 to Figure 13 is respectively the figure of first to the 6th variation of the photosemiconductor encapsulation of expression present embodiment.Wherein, Fig. 8 is the schematic perspective view of the photosemiconductor encapsulation of first variation, and Fig. 9 and Figure 10 are respectively the schematic cross sectional views of the photosemiconductor encapsulation of the second and the 3rd variation.In addition, Figure 11 to Figure 13 is respectively the schematic plan of the photosemiconductor encapsulation of the 4th to the 6th variation.Then, with reference to Fig. 8 to Figure 13, the structure of the photosemiconductor encapsulation of first to the 6th variation of present embodiment is described.
As shown in Figure 8, the difference that the photosemiconductor of the photosemiconductor of first variation of present embodiment encapsulation 1B and above-mentioned present embodiment encapsulates between the 1A is, bonding line 50 draw the direction difference.In the photosemiconductor encapsulation 1A of above-mentioned present embodiment, drawn bonding line 50 towards the direction parallel with the end limit of the built-in inserted plate 10 of essentially rectangular shape, but in the photosemiconductor of this variation encapsulation 1B, draw bonding line 50 towards the direction parallel with the diagonal of the built-in inserted plate of essentially rectangular shape.If adopt such structure, then can constitute the profile of photosemiconductor encapsulation more small-sizedly, help to realize the miniaturization of photoelectric sensor.
As shown in Figure 9, the difference between the photosemiconductor encapsulation 1A of the photosemiconductor of second variation of present embodiment encapsulation 1C and above-mentioned present embodiment is the shape difference of resin-sealed layer 60.In the photosemiconductor encapsulation 1C of this variation, be formed with outstanding upward lens section 62 at light-transmissive resin sealed layer 60 upper surface.This lens section 62 is to form the part that resin-sealed layer formed simultaneously at 60 o'clock, has photoconduction that led chip 30 the is penetrated function to the light projector lens of prescribed direction.By such structure owing to do not need to be provided with in addition lens, therefore have can the simplification device structure advantage.
In addition, in the photosemiconductor encapsulation, be provided with under the situation of lens section, except adopting as above-mentioned photosemiconductor shown in Figure 9 encapsulation 1C, be provided with integratedly on the part of resin-sealed layer 60 beyond the method for lens section 62, also can adopting and separate the lens that form with resin-sealed layer and be bonded and fixed at method on resin-sealed layer.In this case, to separate the top that the lens position that forms is installed in led chip with resin-sealed layer, and the binding agent that utilizes ultraviolet hardening is bonded and fixed at these lens on the resin-sealed layer, thus the optical axis of can the light stable semiconductor packages emitted light.
As shown in figure 10, the difference between the photosemiconductor encapsulation 1A of the photosemiconductor of the 3rd variation of present embodiment encapsulation 1D and above-mentioned present embodiment is, other electronic unit is installed on built-in inserted plate 10.The photosemiconductor encapsulation 1D of this variation is so-called multiple Chip Packaging, on the part beyond the part that is mounted with reflector 20 on the first type surface 10a of built-in inserted plate 10, be mounted with the so-called passive component except led chip 30 or the electronic unit 84,85 of active element.For these electronic units 84,85, with led chip 30 and reflector 20 similarly, also utilize resin-sealed layer 60 to carry out encapsulation process.By such structure, can easily realize multiple Chip Packaging.
As Figure 11 and shown in Figure 12, the encapsulation of the photosemiconductor of the 4th and the 5th variation of present embodiment 1E, 1F have a plurality of reflectors 20 and led chip 30 on built-in inserted plate 10.And these reflectors 20 and led chip 30 are by light-transmissive resin sealed layer 60 sealing.In the photosemiconductor encapsulation 1E of the 4th variation shown in Figure 11,3 groups of reflectors 20 and led chip 30 configurations are point-blank, in the photosemiconductor encapsulation 1F of the 5th variation shown in Figure 12,3 groups of reflectors 20 and led chip 30 are configured on the position suitable with the vertex position of equilateral triangle, make mutual distance equate.By such structure, can be met the photosemiconductor encapsulation of all size, above-mentioned all size is meant, for example by the led chip that a plurality of same kinds are set the light quantity of emergent light is increased, perhaps the led chip (for example sending the led chip of redness (R) light, green (G) light, blueness (B) light) that sends different colours light by combination obtains white light.
As shown in figure 13, the structural similarity of the photosemiconductor of the 6th variation of present embodiment encapsulation 1G and the photosemiconductor encapsulation 1E of the 4th variation of above-mentioned present embodiment, but difference be, by connecting portion 25 each reflectors 20 of connection.Specifically, as shown in figure 13, the reflector 20 of disposed adjacent connects into parts by the connecting portion 25 that extends from flange part 23 respectively.This connecting portion 25 can be made by the following method,, in the manufacturing process of reflector illustrated in fig. 4, by change the position that will cut in the cutting action of the metal plate-like parts that are shaped, can make this connecting portion 25 that is.Under situation about constituting like this, can be omitted in the location of each reflector 20 in the photosemiconductor encapsulation 1G, thereby can obtain the effect of location and installation adjacent LED chip 30 accurately.
(second execution mode)
Figure 14 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression second embodiment of the invention.Then, with reference to this Figure 14 the photosemiconductor encapsulation of second embodiment of the invention is elaborated.In addition,, mark same reference numerals in the drawings, do not repeating its explanation for encapsulating identical part with the photosemiconductor of above-mentioned first execution mode.
As shown in figure 14, the photosemiconductor encapsulation 1A of the photosemiconductor of present embodiment encapsulation 1H and above-mentioned first execution mode similarly has the roughly profile of rectangular shape, is the electronic unit that can carry out mounted on surface to installation base plate.Photosemiconductor encapsulation 1H mainly has: as the built-in inserted plate 10 of basis material, as the reflector 20 of element loading part, as the led chip 30 and the resin-sealed layer 60 of optical semiconductor.
In the photosemiconductor encapsulation 1H of present embodiment, and bonding with the pad 14 on the first type surface 10a that is located at built-in inserted plate 10, in addition, led chip 30 is bonded in the bottom 21 of reflector 20 to reflector 20 across conduction tack coat 44 across conduction tack coat 43.At this, as led chip 30, use respectively the chip that has formed pair of electrodes (anode and negative electrode) at upper surface and lower surface, the electrode that wherein is formed on lower surface is across conduction tack coat 44 and bonding with reflector 20, thus, this electrode is electrically connected with the pad 14 of built-in inserted plate 10 across conduction tack coat 44, reflector 20 and conduction tack coat 43.As conduction tack coat 43,44, can use with scolding tin to be the soldering tin material of representative, conductive adhesive, conductive paste etc.In addition, the situation of the photosemiconductor of electrode that forms on the upper surface of led chip 30 and above-mentioned first execution mode encapsulation 1A similarly is electrically connected with the pad 11 of built-in inserted plate 10 via bonding line 50.
By such structure, can access with the photosemiconductor of above-mentioned first execution mode and encapsulate identical effect, and, therefore can constitute the photosemiconductor encapsulation littlelyr owing to reduced the number of bonding line.
(the 3rd execution mode)
Figure 15 is the process chart of manufacture method that is used to illustrate the photosemiconductor encapsulation of third embodiment of the invention, and Figure 16 A～Figure 16 E is the vertical view that is illustrated in the shape of reflector in manufacture process of being utilized when adopting this manufacture method.In addition, Figure 17 is the schematic plan that expression utilizes a kind of photosemiconductor of the manufacture method manufacturing of photosemiconductor encapsulation shown in Figure 15 to encapsulate.Next, with reference to Figure 15 to Figure 17, the manufacture method of the photosemiconductor of present embodiment encapsulation is elaborated.
As shown in figure 15, the manufacture method of the photosemiconductor of third embodiment of the invention encapsulation is similar to the manufacture method of the photosemiconductor encapsulation of above-mentioned first execution mode.Yet the shape of the reflector 20 that use this moment is different with the manufacture method of the photosemiconductor of above-mentioned first execution mode encapsulation.
Shown in Figure 16 A～Figure 16 E, the employed reflector 20 of manufacture method of the photosemiconductor of present embodiment encapsulation is configured to rectangular, and by connecting portion 25 adjacent reflector 20 is interconnected.This connecting portion 25 can be made by the following method,, in the manufacturing process of the illustrated reflector of Fig. 4, makes this connecting portion 25 by the position that change will be cut in the cutting action of the metal plate-like parts of formed thereby that is.
In addition, utilize the reflector 20 of shape shown in Figure 15,, form photosemiconductor encapsulation 1I through the manufacturing process shown in Figure 16 A～Figure 16 E.Promptly, shown in Figure 16 A, prepared to be pre-formed the built-in inserted plate 10 of the circuit pattern of regulation, utilize resinoid bond to load the reflector 20 of shape shown in Figure 15 thereon, then shown in Figure 16 B, utilize resinoid bond that led chip 30 is loaded on the bottom 21 of reflector 20.Then, shown in Figure 16 C, utilize bonding line 50 to connect the electrode of led chip 30 and the pad 11 of built-in inserted plate 10, then, shown in Figure 16 D, utilize the light-transmissive resin material to carry out revolving die and handle, utilize 60 pairs of various parts that is loaded on the built-in inserted plate 10 of resin-sealed layer to seal.Then, carry out cutting process, thereby obtain the photosemiconductor encapsulation 1I shown in Figure 16 E along the line of cut shown in Figure 16 D 401.
The photosemiconductor encapsulation that utilizes above-mentioned manufacture method to make has for example adopted photosemiconductor shown in Figure 17 to encapsulate the structure of 1I.That is, adopted the structure of the state that connecting portion 25 extends laterally from the flange part of reflector 20.This connecting portion 25 is equivalent to arrive the extension (Yan Let portion till the side of resin-sealed layer 60).At this, connecting portion 25 is made of metal parts, so the heat that led chip 30 produces when work can transmit to this connecting portion 25, thereby can be expeditiously to resin-sealed layer 60 heat radiation.Therefore, under situation about constituting like this, not only can obtain encapsulating the identical effect of 1A with the photosemiconductor of above-mentioned first execution mode, and the effect of the thermal diffusivity that can also be improved in addition.
(the 4th execution mode)
Figure 18 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression four embodiment of the invention.Next, with reference to this Figure 18, encapsulation is elaborated to the photosemiconductor of four embodiment of the invention.In addition,, mark identical Reference numeral in the drawings, do not repeat its explanation for encapsulating identical part with the photosemiconductor of above-mentioned second execution mode.
As shown in figure 18, the photosemiconductor encapsulation 1H of the photosemiconductor of present embodiment encapsulation 1J and above-mentioned second execution mode similarly has the roughly profile of rectangular shape, is the electronic unit that can carry out mounted on surface to installation base plate.Photosemiconductor encapsulation 1J mainly has: as the built-in inserted plate 10 of basis material, as the reflector 20 of element loading part, as the led chip 30 and the resin-sealed layer 60 of optical semiconductor.At this, and bonding with the pad 14 on the first type surface 10a that is located at built-in inserted plate 10, in addition, led chip 30 is bonded in the bottom 21 of reflector 20 to reflector 20 across conduction tack coat 44 across conduction tack coat 43.
In the photosemiconductor encapsulation 1J of present embodiment, reflector 20 is covered by metal plating film 26.More particularly, the interarea (hereinafter referred to as lower surface) that comprises built-in inserted plate 10 1 sides of the interarea (hereinafter referred to as upper surface) of led chip 30 1 sides of reflector 20 of the wall that is used to determine receiving room 24 and reflector 20 is all covered by the metal plating film 26 of same kind.Therefore, conduction tack coat 43,44 all is connected with the metal plating film 26 that covers reflector 20 surfaces.At this, the body portion that comprises bottom 21, sidepiece 22 and the flange part 23 of reflector 20 for example is made of copper, copper alloy, phosphor bronze, 42 alloys metals such as (alloy), the metal plating film 26 preferential metallic films (membrane) that adopt tin, silver, nickel, gold etc.
In these metal plating films 26, the metal plating film of the part that the upper surface side as the bottom 21 of the part that is used to determine receiving room 24 and sidepiece 22 is covered is equivalent to first coverlay, this first coverlay is used for reflecting expeditiously the light that led chip 30 penetrates, and its luminance factor is used to determine that the reflectivity of wall of body portion of receiving room 24 is big.Therefore, cover the surface of the body portion of reflector 20, can improve the optical efficiency of getting of the light that takes out from photosemiconductor encapsulation 1J tremendously by utilizing above-mentioned metal plating film 26.
In addition, in metal plating film 26, the metal plating film of the part of 21 upper surface side and lower face side is equivalent to second coverlay bottom covering, and this second coverlay is used to reduce the body portion of reflector 20 and the contact resistance between the conduction tack coat 43,44.Usually, form thicker oxide-film easily, owing to exist this oxide-film therefore can cause contact resistance to increase on the surface of the metal parts of copper, copper alloy, phosphor bronze or 42 alloys etc.Thereby, by utilizing above-mentioned metal plating film 26 to cover the surface of the body portion of reflector 20, thereby the contact resistance between the metal plating film 26 that can reduce to conduct electricity tack coat 43,44 and contact above-mentioned tack coat 43,44, led chip 30 is connected with low-resistance electric via the pad 14 of reflector 20 and built-in inserted plate 10, thereby can realizes good electrical connection characteristic.
Even under the situation of the encapsulating structure that adopts said structure, also can not make the manufacturing of reflector become complicated, and can make reflector at low cost by high efficiency.Below, the manufacture method of the reflector of structure shown in Figure 180 is elaborated.
Figure 19 A～Figure 19 D is the process chart of the manufacture method of expression reflector shown in Figure 180, and Figure 20 A～Figure 20 E is the process chart of other example of the manufacture method of expression reflector shown in Figure 180.Shown in Figure 19 A～Figure 19 D and Figure 20 A～Figure 20 E, even under the situation of making reflector 20 shown in Figure 180, also preferentially use punch process.
In the manufacture method of the reflector shown in Figure 19 A～Figure 19 D, at first, shown in Figure 19 A, metal plate-like parts 300 are set on stamping machine, wherein, this stamping machine has at counterdie 201 that is formed with a plurality of recess 201a on the stamping surface and the patrix 202 that is formed with a plurality of protuberance 202a on stamping surface, and these metal plate-like parts 300 are to handle (metallide is handled or electroless plating is handled) by implementing metal plating in advance and surface and lower surface have formed the parts of metal plating film 301 thereon.At this, be arranged on the stamping machine and the surperficial parts that after processing, become reflector 20 by the metal plate-like parts 300 of metal plating film 301 coverings, therefore use the parts that constitute by above-mentioned copper, copper alloy, phosphor bronze or 42 alloys etc. and as the metal plate-like parts, preferably, its thickness of slab is below 0.3mm, the metallic film that adopts tin, silver, nickel, gold etc. is as metal plating film 301, and its thickness is more than 0.1 μ m and in the scope below the 10 μ m.
Then, shown in Figure 19 B, utilize 202 pairs of metal plate-like parts of counterdie 201 and patrix 300 to carry out punching press.Handle by this punching press, plastic deformations take place in metal plate-like parts 300, thereby become along the shape of the stamping surface of the counterdie 201 of stamping machine and patrix 202.At this moment, because the thickness of slab of the metal plate-like parts 300 of the body portion of formation reflector 20 is extremely thin, therefore the metal plating film 301 that forms in its surface can not peeled off, and can keep the state by metal plating film 301 covered metal plate shape parts 300 after punching press yet.
Then, shown in Figure 19 C, from stamping machine, take out the metal plate-like parts 300 after the punching press,, thereby produce reflector 20 shown in Figure 19 D along the 400 cutting metal plate-shaped members 300 of the line of cut shown in Figure 19 C.In addition, as mentioned above, use the metal plate-like parts 300 that carry out the metal plating processing in advance and formed metal plating film 301 on its surface, utilize counterdie and patrix to carry out the punching press processing, thereby can once obtain a large amount of reflectors in high efficiency ground with a plurality of recesses and protuberance.
In the manufacture method of the reflector shown in Figure 20 A～Figure 20 E, at first, shown in Figure 20 A, metal plate-like parts 300 are set on stamping machine, wherein, this stamping machine has at counterdie 201 that is formed with a plurality of recess 201a on the stamping surface and the patrix 202 that is formed with a plurality of protuberance 202a on stamping surface, and these metal plate-like parts 300 are the metal plate-like parts that do not form the metal plating film.At this, the metal plate-like parts 300 that are arranged on the stamping machine are the body portions that become reflector 20 after the processing, therefore preferably, utilize the plate-shaped member that is made of above-mentioned copper, copper alloy, phosphor bronze or 42 alloys etc., and its thickness of slab is below 0.3mm.
Then, shown in Figure 20 B, utilize 202 pairs of metal plate-like parts of counterdie 201 and patrix 300 to carry out punching press.Handle by this punching press, plastic deformations take place in metal plate-like parts 300, become along the shape of the stamping surface of the counterdie 201 of stamping machine and patrix 202.Then, shown in Figure 20 C, from stamping machine, take out metal plate-like parts 300.
Then, shown in Figure 20 D, the metal plate-like parts 300 of having implemented punch process are carried out metal plating handle (metallide is handled or electroless plating is handled), thus surperficial thereon and lower surface formation metal plating film 301.As the metal plating film 301 that forms this moment, preferably, adopt the metallic film of tin, silver, nickel, gold etc., its thickness is more than 0.1 μ m and in the scope below the 10 μ m.
Then, cut the metal plate-like parts 300 that covered by metal plating film 301, thereby produce the reflector 20 shown in Figure 20 E along the line of cut shown in Figure 20 D 400.In addition, as mentioned above, utilize counterdie and patrix to carry out the punching press processing, carry out metal plating then and handle, thereby can once obtain a large amount of reflectors in high efficiency ground with a plurality of recesses and protuberance.
Figure 21 A, Figure 21 B and Figure 22 A, Figure 22 B are the process chart of expression with respect to the manufacture method of the reflector of the comparative example of the manufacture method of the reflector of present embodiment.The manufacture method of the reflector shown in Figure 21 A, Figure 21 B is to the sheet (block) with quite thick thickness thereby the metal parts of shape carries out the manufacture method of punching press processing shaped reflector; Figure 22 is A, thereby the manufacture method of the reflector shown in Figure 22 B is the metal parts of the sheet with quite thick thickness to be implemented the manufacture method of cut shaped reflector.
In the manufacture method of the reflector of first comparative example shown in Figure 21 A, Figure 21 B, at first, shown in Figure 21 A, Metal Flake parts 300 are set on stamping machine, wherein, it is plane counterdie 201 and the patrix 202 that has formed a plurality of protuberance 202a on stamping surface that this stamping machine has stamping surface, these Metal Flake parts 300 are the Metal Flake parts with quite thick thickness (more than the 0.35mm), and in advance it are implemented that (metallide is handled or electroless plating is handled) handled in metal plating and surface and lower surface have formed metal plating film 301 thereon.Then, shown in Figure 19 B, utilize 202 pairs of Metal Flake parts 300 of counterdie 201 and patrix to carry out punching press.Handle by this punching press, plastic deformations take place in Metal Flake parts 300, become along the shape of the stamping surface of the patrix 202 of stamping machine.Cut out these the Metal Flake parts 300 after punching press is handled singly, can make reflector thus.
Yet under the situation of the manufacture method of the reflector that adopts above-mentioned first comparative example, when carrying out above-mentioned punching press and handle, a part that forms metal plating film 301 on the surface of Metal Flake parts 300 can be peeled off.This is the thick reason of thickness because of the Metal Flake parts 300 of the body portion that constitutes reflector, because the surface of Metal Flake parts 300 can produce the stress raisers phenomenon when punch process.In the concentrated part of this generation stress, owing to metal plating film 301 is thin, so its a part of can fracture, when carrying out the punching press processing, peel off.Therefore, the manufacture method of the reflector of above-mentioned present embodiment is compared with the manufacture method of the reflector of this first comparative example, occupies clear superiority on this aspect of rate of finished products.
In addition, in the manufacture method of the reflector of second comparative example shown in Figure 22 A, Figure 22 B, at first, shown in Figure 22 A, preparation handle by implementing metal plating in advance (metallide is handled or electroless plating is handled) and thereon surface and lower surface formed the Metal Flake parts 300 of the quite thick thickness (more than the 0.35mm) of metal plating film 301, utilize hammer drill 500 successively it to be cut.Thus, shown in Figure 22 B, after cutting, formed recess as the receiving room of reflector in the upper surface side of Metal Flake parts 300.By cutting out these Metal Flake parts 300 of handling through cutting singly, can produce reflector.
Yet under the situation of the manufacture method of the reflector that adopts above-mentioned second comparative example, when carrying out above-mentioned cutting and handle, in the nature of things, the metal plating film 301 that forms on the surface of Metal Flake parts 300 is cut to be removed.Therefore, the manufacture method of the reflector of second comparative example can't form the metal plating film on the wall of the receiving room that is used to determine reflector, in this, compare with the manufacture method of the reflector of above-mentioned present embodiment, the manufacture method of the reflector of second comparative example has shortcoming.
As described above, by adopting the photosemiconductor encapsulation 1J of present embodiment, effect in the time of not only can obtaining to adopt the photosemiconductor encapsulation of above-mentioned second execution mode, but also can obtain further to improve the effect of getting optical efficiency that encapsulates the light of 1J taking-up from photosemiconductor, and can obtain to make led chip 30 via reflector 20, the effect that is connected with low-resistance electric with the pad 14 of built-in inserted plate 10.In addition, adopt the manufacture method of above-mentioned present embodiment to handle formation reflector 20 by punching press, thereby make the shape of reflector 20 easily, even reflector as micro-element, also can realize its shape accurately, and can form metal plating film 26 well at the upper surface and the lower surface of reflector 20.Therefore, not only can be easily and make small-sized and slim high performance reflector at an easy rate, but also can be easily and make the photosemiconductor encapsulation at an easy rate.
(the 5th execution mode)
Figure 23 is the schematic cross sectional views of internal structure of the photosemiconductor encapsulation of expression the 5th execution mode of the present invention.Then, with reference to this Figure 23, encapsulation is elaborated to the photosemiconductor of the 5th execution mode of the present invention.In addition,, mark identical Reference numeral in the drawings, do not repeat its explanation for encapsulating identical part with the photosemiconductor of above-mentioned first execution mode.
As shown in figure 23, the photosemiconductor encapsulation 1A of the photosemiconductor of present embodiment encapsulation 1K and above-mentioned first execution mode similarly has the roughly profile of rectangular shape, and constitutes the electronic unit that can carry out mounted on surface to installation base plate.Photosemiconductor encapsulation 1K mainly has: as the built-in inserted plate 10 of basis material, the reflector 20 as the element loading part, the led chip 30 as optical semiconductor, resin-sealed layer 60.At this, reflector 20 is bonded on the built-in inserted plate 10 across tack coat 41, and wherein, this tack coat 41 is layers that the insulating adhesive as die-bond material is solidified to form; Led chip 30 is bonded in across tack coat 42 on the bottom 21 of reflector 20, and wherein, this tack coat 42 is the layers that are solidified to form by the insulating adhesive that makes as die-bond material.
In the photosemiconductor encapsulation 1K of present embodiment, reflector 20 is covered by metal plating film 26.More particularly, the interarea that is positioned at led chip 30 1 sides that comprises the reflector 20 of the wall that is used to determine receiving room 24 is covered by metal plating film 26.This metal plating film 26 is equivalent to first coverlay, and this first coverlay is used for reflecting expeditiously the light that led chip 30 penetrates, and its luminance factor is used to determine that the reflectivity of wall of body portion of receiving room is big.Therefore, utilize this metal plating film 26 to cover to be used to comprising of reflectors 20 upper surface of the wall portion that determines receiving room, thereby can improve the optical efficiency of getting of the light that takes out from photosemiconductor encapsulation 1K tremendously.In addition, preferably, metal plating film 26 adopts the metallic film of tin, silver, nickel, gold etc., and its thickness is more than 0.1 μ m and in the scope below the 10 μ m.
Under situation about constituting like this, the effect in the time of not only can obtaining to adopt the photosemiconductor encapsulation of above-mentioned first execution mode, but also can obtain further to improve the effect of getting optical efficiency of the light that takes out from photosemiconductor encapsulation 1K.Like this, under the situation that forms metal plating film 26 on the reflector 20, do not need that upper surface and the lower surface at reflector 20 all forms metal plating film 26 as above-mentioned the 4th execution mode, and can only form metal plating film 26 according to actual conditions at upper surface.
In the above-mentioned the 4th and the 5th execution mode illustrated such structure, that is, the reflector before the drawing or after the drawing is implemented metal plating handles, thus with metal plating film covering reflector.Yet, reflectivity for the upper surface of the inner peripheral surface of sidepiece of the effect of the reflecting surface that improves the performance reflector and/or bottom, after drawing, metal material that can certainly reflectivity is high or resin material pass through electroplating processes additive method plated film (coating) in addition on this reflector.This film plating process can adopt evaporation, coating the whole bag of tricks such as (dipping plated film, spin coatings etc.).If use and to have implemented the reflector that this coating film treatment is crossed, then be used to determine the wall of the receiving room of the reflector rate film big that be reflected to cover than the reflectivity of this wall, thus the light of taking-up led chip ejaculation from the photosemiconductor encapsulation more effectively.
In addition, in above-mentioned first to the 5th execution mode, for example understand reflector with flange part, under the situation that flange part is set like this, not only can improve working ability and production efficiency, can also strengthen the rigidity of reflector, thereby can obtain on-deformable effect when operation.Yet this flange part 23 dispensable structures can certainly be made the reflector that does not have flange part.
In addition, in above-mentioned first to the 5th execution mode, for example understand the photosemiconductor package application situation of the present invention that is built-in with led chip as light-projecting component, but also can be to being built-in with the replacement led chip as PD (the Photo Diode: photosemiconductor package application the present invention of chip photodiode) of photo detector.Under the situation of making the encapsulation of this photosemiconductor, can improve and be subjected to optical efficiency, can eliminate stray light (stray light) in addition.In addition, the light-receiving device that for example photosemiconductor that is built-in with this PD chip can be encapsulated as photoelectric sensor uses.
Like this, these disclosed the respective embodiments described above and variation thereof all illustrate, and therefore are not limited thereto.Technical scope of the present invention is limited by claims, and comprises and the meaning of the record equivalence of claims and the whole changes in the scope thereof.
Claims (31)
1. a photosemiconductor encapsulation has optical semiconductor and basis material, and this optical semiconductor is used for light projector or is subjected to light, and above-mentioned optical semiconductor is installed on this basis material, it is characterized in that,
Above-mentioned optical semiconductor is loaded on the above-mentioned basis material across the element loading part, and this element loading part directly is loaded on the above-mentioned basis material,
The said elements loading part comprise flat bottom, from the continuous extension of the periphery of this bottom and more to the tabular sidepiece of the top circular cone that then diameter is big more, above opening and by the receiving room of above-mentioned bottom and above-mentioned sidepiece defined,
Be used to determine that the wall of above-mentioned receiving room can reflect the light that is shone,
Above-mentioned optical semiconductor is loaded on the above-mentioned bottom in the above-mentioned receiving room of said elements loading part,
The said elements loading part is by metal plate-like parts being carried out the formed drawing product of punch process.
2. photosemiconductor encapsulation as claimed in claim 1 is characterized in that the thickness of above-mentioned bottom and above-mentioned sidepiece equates, below 0.3mm.
3. photosemiconductor encapsulation as claimed in claim 1, it is characterized in that, the said elements loading part also comprises flange part, this flange part extends laterally continuously from a side end of above-mentioned sidepiece, wherein, an above-mentioned side end is meant, with the end of the opposite side in end of above-mentioned bottom one side of above-mentioned sidepiece.
4. photosemiconductor encapsulation as claimed in claim 3 is characterized in that the thickness of above-mentioned bottom, above-mentioned sidepiece and above-mentioned flange part equates, below 0.3mm.
5. photosemiconductor as claimed in claim 1 encapsulation is characterized in that, the bonding line of above-mentioned optical semiconductor by drawing via opening above said elements loading part above-mentioned is electrically connected with circuit on being located at above-mentioned basis material.
6. photosemiconductor encapsulation as claimed in claim 1 is characterized in that above-mentioned optical semiconductor is bonded on the said elements loading part across the insulation adhesive layer.
7. photosemiconductor encapsulation as claimed in claim 6 is characterized in that above-mentioned insulation adhesive layer is made of the tack coat that contains the light-transmissive resin material.
8. photosemiconductor encapsulation as claimed in claim 1 is characterized in that the said elements loading part is bonded on the above-mentioned basis material across the insulation adhesive layer.
9. as each described photosemiconductor encapsulation in the claim 1 to 8, it is characterized in that be used to determine that the above-mentioned wall of above-mentioned receiving room is covered by first coverlay, wherein, the reflectivity of this wall of luminance factor of this first coverlay is big.
10. photosemiconductor encapsulation as claimed in claim 9 is characterized in that above-mentioned first coverlay is the plated film of metal material or resin material.
11. photosemiconductor encapsulation as claimed in claim 9 is characterized in that above-mentioned first coverlay is the metal plating film.
12. photosemiconductor as claimed in claim 11 encapsulation is characterized in that, above-mentioned metal plating film contains more than one the metal that is selected from the group of being made up of tin, silver, nickel and gold.
13. photosemiconductor encapsulation as claimed in claim 1 is characterized in that,
The said elements loading part is made of conductive component,
Above-mentioned optical semiconductor is electrically connected with circuit on being located at above-mentioned basis material by the said elements loading part.
14. photosemiconductor encapsulation as claimed in claim 13 is characterized in that,
Above-mentioned optical semiconductor is bonded on the said elements loading part by welding material, conductive adhesive or conductive paste,
The said elements loading part is bonded on the above-mentioned basis material by welding material, conductive adhesive or conductive paste.
15. photosemiconductor encapsulation as claimed in claim 14, it is characterized in that, being covered by second coverlay of said elements loading part with the bonding adhesive surface of above-mentioned optical semiconductor, wherein, this second coverlay is used to reduce the contact resistance between above-mentioned optical semiconductor and the said elements loading part.
16. photosemiconductor encapsulation as claimed in claim 15 is characterized in that,
Above-mentioned second coverlay also covers the part except above-mentioned adhesive surface on the above-mentioned wall that is used to determine above-mentioned receiving room,
The luminance factor of above-mentioned second coverlay is used to determine that the reflectivity of above-mentioned wall of above-mentioned receiving room is big.
17. photosemiconductor as claimed in claim 15 encapsulation is characterized in that, above-mentioned second coverlay also cover the said elements loading part with the bonding adhesive surface of above-mentioned basis material.
18. photosemiconductor encapsulation as claimed in claim 15 is characterized in that above-mentioned second coverlay is the metal plating film.
19. photosemiconductor as claimed in claim 18 encapsulation is characterized in that, above-mentioned metal plating film contains more than one the metal that is selected from the group of being made up of tin, silver, nickel and gold.
20. photosemiconductor encapsulation as claimed in claim 1 is characterized in that, in the part except the part that is mounted with the said elements loading part on the above-mentioned basis material, passive component or active element is installed.
21. photosemiconductor encapsulation as claimed in claim 1 is characterized in that, above-mentioned optical semiconductor is by light-transmissive resin sealed layer sealing.
22. photosemiconductor encapsulation as claimed in claim 21, it is characterized in that above-mentioned light-transmissive resin sealed layer seals all parts on the interarea that is installed in above-mentioned basis material, wherein, this interarea is meant, the face of the side that above-mentioned optical semiconductor is installed of above-mentioned basis material.
23. photosemiconductor encapsulation as claimed in claim 21 is characterized in that, above-mentioned resin-sealed layer comprises that lens section, this lens section are positioned at and corresponding position, the position of above-mentioned optical semiconductor.
24. photosemiconductor encapsulation as claimed in claim 21, it is characterized in that, the said elements loading part has extension, this extension extends and arrives the side of above-mentioned resin-sealed layer laterally continuously from a side end of above-mentioned sidepiece, wherein, an above-mentioned side end is meant, with the end of the opposite side of above-mentioned bottom one side of above-mentioned sidepiece.
25. photosemiconductor encapsulation as claimed in claim 1 is characterized in that, is mounted with a plurality of said elements loading parts on above-mentioned basis material, wherein, is mounted with above-mentioned optical semiconductor on the said elements loading part.
26. a photoelectric sensor is characterized in that, has each described photosemiconductor encapsulation in the claim 1 to 25.
27. the manufacture method of a photosemiconductor encapsulation is used for making each described photosemiconductor encapsulation of claim 1 to 25, it is characterized in that, comprising:
Prepare the step of metal plate-like parts;
Above-mentioned plate-shaped member is carried out punch process, form the step of said elements loading part with this;
The said elements loading part is loaded in step on the above-mentioned basis material.
28. the manufacture method of a photosemiconductor encapsulation is used for making each described photosemiconductor encapsulation of claim 9 to 12, it is characterized in that, comprising:
Prepare the step of metal plate-like parts;
On the surface of above-mentioned plate-shaped member, form the step of above-mentioned first coverlay;
The above-mentioned plate-shaped member that is formed with above-mentioned first coverlay is carried out punch process, form the step of said elements loading part with this;
The said elements loading part is loaded in step on the above-mentioned basis material.
29. the manufacture method of a photosemiconductor encapsulation is used for making each described photosemiconductor encapsulation of claim 9 to 12, it is characterized in that, comprising:
Prepare the step of metal plate-like parts;
Above-mentioned plate-shaped member is carried out punch process, on the surface of this plate-shaped member after the punch process, form above-mentioned first coverlay, form the step of said elements loading part with this;
The said elements loading part is loaded in step on the above-mentioned basis material.
30. the manufacture method of a photosemiconductor encapsulation is used for making each described photosemiconductor encapsulation of claim 15 to 19, it is characterized in that, comprising:
Prepare the step of metal plate-like parts;
On the surface of above-mentioned plate-shaped member, form the step of above-mentioned second coverlay;
The above-mentioned plate-shaped member that is formed with above-mentioned second coverlay is carried out punch process, form the step of said elements loading part with this;
The said elements loading part is loaded in step on the above-mentioned basis material.
31. the manufacture method of a photosemiconductor encapsulation is used for making each described photosemiconductor encapsulation of claim 15 to 19, it is characterized in that, comprising:
Prepare the step of metal plate-like parts;
Above-mentioned plate-shaped member is carried out punch process, on the surface of this plate-shaped member after the punch process, form above-mentioned second coverlay, form the step of said elements loading part with this;
The said elements loading part is loaded in step on the above-mentioned basis material.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
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| JP2007298413 | 2007-11-16 | ||
| JP2007-298413 | 2007-11-16 | ||
| JP2007298413 | 2007-11-16 | ||
| JP2008-173501 | 2008-07-02 | ||
| JP2008173501 | 2008-07-02 | ||
| JP2008173501A JP4525804B2 (en) | 2007-11-16 | 2008-07-02 | Optical semiconductor package and photoelectric sensor provided with the same |
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| Publication Number | Publication Date |
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| CN101436634A CN101436634A (en) | 2009-05-20 |
| CN101436634B true CN101436634B (en) | 2011-03-23 |
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| CN2008101766614A Active CN101436634B (en) | 2007-11-16 | 2008-11-14 | Photosemiconductor package, manufacturing method thereof and photoelectric sensor equipped therewith |
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| JP (1) | JP4525804B2 (en) |
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| WO2011062148A1 (en) * | 2009-11-19 | 2011-05-26 | 株式会社 明王化成 | Package for semiconductor, and heat dissipating lead frame |
| KR101645008B1 (en) * | 2010-06-30 | 2016-08-03 | 서울반도체 주식회사 | Method of mounting light emitting diode package |
| JP4962635B1 (en) * | 2011-03-15 | 2012-06-27 | オムロン株式会社 | Optical semiconductor package, optical semiconductor module, and manufacturing method thereof |
| CN102956758B (en) * | 2011-08-22 | 2015-03-25 | 赛恩倍吉科技顾问（深圳）有限公司 | Method for manufacturing LED packaging structure |
| DE102013114345A1 (en) * | 2013-12-18 | 2015-06-18 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
| CN106449864B (en) * | 2016-08-30 | 2018-05-29 | 江苏派诺光电科技股份有限公司 | A kind of manufacturing method of light-detecting device |
| CN109065527A (en) * | 2018-07-31 | 2018-12-21 | 江门黑氪光电科技有限公司 | A kind of non-resistance LED light string |
| JP7150044B2 (en) * | 2018-10-19 | 2022-10-07 | 京セラ株式会社 | Optical device mounting package, electronic device and electronic module |
| CN111323118A (en) * | 2018-12-17 | 2020-06-23 | 山东华光光电子股份有限公司 | Device for detecting light emission of semiconductor laser and capable of avoiding optical crosstalk and mounting method thereof |
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| JP3696020B2 (en) * | 2000-01-20 | 2005-09-14 | 三洋電機株式会社 | Hybrid integrated circuit device |
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- 2008-11-11 DE DE102008043645A patent/DE102008043645A1/en not_active Ceased
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| JP2001012822A (en) * | 1999-06-28 | 2001-01-19 | Showa Alum Corp | Multilayer heat exchanger |
| CN1588652A (en) * | 2004-08-11 | 2005-03-02 | 深圳市瑞丰光电子有限公司 | Ceramic package light-emitting diode an dits package method |
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| DE102008043645A1 (en) | 2009-08-20 |
| CN101436634A (en) | 2009-05-20 |
| JP2009141317A (en) | 2009-06-25 |
| JP4525804B2 (en) | 2010-08-18 |
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