TWI576318B - Method for manufacturing glass substrates - Google Patents

Method for manufacturing glass substrates Download PDF

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Publication number
TWI576318B
TWI576318B TW103103818A TW103103818A TWI576318B TW I576318 B TWI576318 B TW I576318B TW 103103818 A TW103103818 A TW 103103818A TW 103103818 A TW103103818 A TW 103103818A TW I576318 B TWI576318 B TW I576318B
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glass
partition wall
glass substrate
inner partition
molded body
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TW103103818A
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Chinese (zh)
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TW201437155A (en
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Nobuhiro Maeda
Yusuke Shioji
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Avanstrate Inc
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C03B17/06Forming glass sheets
    • C03B17/064Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Glass Compositions (AREA)
  • Ceramic Products (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Description

玻璃基板之製造方法 Method for manufacturing glass substrate

本發明係關於一種利用下拉法之玻璃基板之製造方法。 The present invention relates to a method of manufacturing a glass substrate using a down-draw method.

於玻璃基板之製造步驟中,使用下拉法作為使玻璃成形之方法。下拉法係於熔融玻璃流入成形體之溝槽後,使熔融玻璃自溝槽溢流。其後,熔融玻璃沿成形體之側面流下。熔融玻璃係於成形體之下端部合流,其後,離開成形體而成為片狀之玻璃(平板玻璃)。平板玻璃係藉由輥而向下方拉伸搬送,且藉由爐內之環境而冷卻。其後,平板玻璃被切斷成所需之大小,進而經加工而成為玻璃基板。 In the manufacturing step of the glass substrate, a down-draw method is used as a method of forming the glass. The pull-down method is such that after the molten glass flows into the groove of the formed body, the molten glass overflows from the groove. Thereafter, the molten glass flows down the side of the formed body. The molten glass is joined to the lower end portion of the molded body, and then separated from the molded body to form a sheet-shaped glass (flat glass). The flat glass is stretched and conveyed downward by a roll, and is cooled by the environment inside the furnace. Thereafter, the flat glass is cut into a desired size and further processed to form a glass substrate.

下述專利文獻1中記載之玻璃板之製造裝置具備將爐室內之發熱體與成形體分隔之內部間隔壁。爐室內之熔融玻璃之熱係與利用發熱體加熱而成之內部間隔壁之間主要經由輻射熱傳遞進行熱交換,故而若於內部間隔壁面存在溫度分佈則於對向之熔融玻璃之面亦於寬度方向產生溫度分佈。因此,作為內部間隔壁之材質,較理想為導熱率較大且均質度較高者。於專利文獻1中,記載有可對上述內部間隔壁使用例如SiC製之板的情況。 The apparatus for manufacturing a glass sheet described in Patent Document 1 below includes an internal partition that partitions the heat generating body in the furnace chamber from the molded body. The heat between the molten glass in the furnace chamber and the internal partition heated by the heating element is mainly exchanged by radiant heat transfer. Therefore, if there is a temperature distribution on the inner partition wall, the surface of the opposite molten glass is also wide. The direction produces a temperature distribution. Therefore, as the material of the inner partition wall, it is preferable that the thermal conductivity is large and the homogeneity is high. Patent Document 1 describes a case where a plate made of, for example, SiC can be used for the inner partition wall.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]註冊實用新型第2530060號公報 [Patent Document 1] Registered Utility Model No. 2530060

然而,即便於將導熱率較大且均質度較高之SiC製之板用作內部間隔壁之情形時,就以氣孔率較高之材料製作而成之內部間隔壁而言,亦存在如下情況:若長時間暴露於成形爐室內之高溫環境,則於內部間隔壁之內部,因內部之氣孔使得Si氧化而形成SiO2,由此導致異常膨脹,從而會發生變形或表面產生龜裂或破裂。若產生如上所述之內部間隔壁之變形、表面之龜裂、破裂,則內部間隔壁之均熱效果降低,玻璃基板之品質降低,或必需更換內部間隔壁而使玻璃基板之生產性降低。 However, even in the case where a SiC plate having a large thermal conductivity and a high degree of homogeneity is used as the inner partition wall, the inner partition wall made of a material having a high porosity has the following conditions. : If it is exposed to the high temperature environment in the forming furnace for a long time, inside the internal partition wall, the internal pores cause Si to oxidize to form SiO 2 , thereby causing abnormal expansion, which may cause deformation or crack or crack on the surface. . When the deformation of the internal partition wall, the cracking of the surface, and the cracking occur as described above, the heat equalization effect of the internal partition wall is lowered, the quality of the glass substrate is lowered, or the internal partition wall needs to be replaced, and the productivity of the glass substrate is lowered.

因此,本發明之目的在於提供一種於利用下拉法製造玻璃基板時能抑制內部間隔壁之氧化膨脹的玻璃基板之製造方法。 Accordingly, an object of the present invention is to provide a method for producing a glass substrate capable of suppressing oxidative expansion of an internal partition wall when a glass substrate is produced by a down-draw method.

本發明之玻璃基板之製造方法具有以下態樣。 The method for producing a glass substrate of the present invention has the following aspects.

[態樣1] [Scenario 1]

一種玻璃基板之製造方法,其特徵在於:其係具有利用下拉法使熔融玻璃成形為平板玻璃之步驟者,且於成形爐室設置發熱體、上述成形體、及分隔上述發熱體與上述成形體之內部間隔壁,對上述內部間隔壁使用開氣孔率為1%以下之SiC燒結體,藉由上述發熱體並介隔上述內部間隔壁而將流動於上述成形體之上述熔融玻璃加熱。 A method for producing a glass substrate, comprising: forming a molten glass into a flat glass by a down-draw method; and providing a heating element, the molded body, and the heat generating body and the molded body in a forming furnace chamber; In the internal partition, an SiC sintered body having an open porosity of 1% or less is used for the internal partition, and the molten glass flowing through the molded body is heated by the heat generating body and interposed between the internal partitions.

[態樣2] [Surface 2]

如態樣1之玻璃基板之製造方法,其中上述內部間隔壁之導熱率於1200℃下為20W/(m.K)以上。 A method of producing a glass substrate according to aspect 1, wherein the inner partition wall has a thermal conductivity of 20 W/(m.K) or more at 1200 °C.

[態樣3] [Surface 3]

如態樣1或2之玻璃基板之製造方法,其中上述熔融玻璃係於105泊(poise)之黏度時為1000℃以上。 The aspect of the method of producing a glass substrate of 1 or 2, wherein the viscosity of the melt when the glass based on 105 poises (Poise) of less than 1000 ℃.

[態樣4] [Surface 4]

如態樣1至3中任一項之玻璃基板之製造方法,其中上述玻璃基板為無鹼玻璃或含微量鹼之玻璃。 The method for producing a glass substrate according to any one of the aspects 1 to 3, wherein the glass substrate is an alkali-free glass or a glass containing a trace amount of alkali.

[態樣5] [Surface 5]

如態樣1至4中任一項之玻璃基板之製造方法,其中將上述成形爐室之爐壁與上述內部間隔壁之間的空間利用水平間隔壁區劃為上下鄰接之複數個小空間,且於上述小空間之各者配置上述發熱體。 The method for producing a glass substrate according to any one of the aspects 1 to 4, wherein a space between the furnace wall of the forming furnace chamber and the inner partition wall is partitioned into a plurality of small spaces adjacent to each other by a horizontal partition wall, and The heat generating body is disposed in each of the small spaces.

[態樣6] [Figure 6]

如態樣5之玻璃基板之製造方法,其係以上述內部間隔壁之面向上述成形體之側之壁面的溫度隨著向上述熔融玻璃流動之方向前進而溫度下降的方式,調整上述發熱體之發熱量。 In the method of producing a glass substrate according to the aspect 5, the temperature of the wall surface facing the side of the molded body of the inner partition wall is adjusted so as to proceed in a direction in which the molten glass flows, and the heat generating body is adjusted. Calorie.

根據作為本發明之一態樣之玻璃基板之製造方法,於利用下拉法製造玻璃基板時,能抑制伴隨內部間隔壁之氧化膨脹之問題之產生。 According to the method for producing a glass substrate which is one aspect of the present invention, when the glass substrate is produced by the down-draw method, the problem of oxidative expansion accompanying the internal partition walls can be suppressed.

14‧‧‧成形體 14‧‧‧Formed body

14b‧‧‧側面 14b‧‧‧ side

14c‧‧‧傾斜面 14c‧‧‧ sloped surface

14d‧‧‧最下端部 14d‧‧‧Bottom

16‧‧‧內部間隔壁 16‧‧‧Internal partition

18‧‧‧溝槽部 18‧‧‧ Groove Department

20‧‧‧分隔構件 20‧‧‧Parts

22‧‧‧冷卻輥 22‧‧‧Cooling roller

24‧‧‧爐壁 24‧‧‧ furnace wall

26‧‧‧水平間隔壁 26‧‧‧ horizontal partition

28‧‧‧發熱體 28‧‧‧heating body

30‧‧‧成形爐室 30‧‧‧Forming furnace room

100‧‧‧玻璃基板製造裝置 100‧‧‧Glass substrate manufacturing equipment

200‧‧‧熔解裝置 200‧‧‧melting device

201‧‧‧熔解槽 201‧‧‧melting tank

202‧‧‧澄清槽 202‧‧‧Clarification tank

203‧‧‧攪拌槽 203‧‧‧Stirring tank

204‧‧‧第1配管 204‧‧‧1st piping

205‧‧‧第2配管 205‧‧‧2nd piping

300‧‧‧成形裝置 300‧‧‧Forming device

G‧‧‧平板玻璃 G‧‧‧ flat glass

MG‧‧‧熔融玻璃 MG‧‧‧ molten glass

圖1係本實施形態之玻璃基板之製造方法之一部分的流程圖。 Fig. 1 is a flow chart showing a part of a method of manufacturing a glass substrate of the present embodiment.

圖2係表示本實施形態之玻璃基板之製造方法中使用之玻璃基板製造裝置的模式圖。 Fig. 2 is a schematic view showing a glass substrate manufacturing apparatus used in the method for producing a glass substrate of the embodiment.

圖3係表示圖2所示之玻璃基板製造裝置所含之成形裝置之一部分的側視圖。 Fig. 3 is a side view showing a part of a molding apparatus included in the glass substrate manufacturing apparatus shown in Fig. 2;

圖4係說明本實施形態之發熱體周邊之溫度分佈之圖。 Fig. 4 is a view for explaining the temperature distribution around the heating element of the embodiment.

以下,一面參照圖式,一面對本實施形態之玻璃基板之製造方法進行說明。 Hereinafter, a method of manufacturing a glass substrate of the present embodiment will be described with reference to the drawings.

圖1係表示本實施形態之玻璃基板之製造方法之一部分的流程圖。 Fig. 1 is a flow chart showing a part of a method of manufacturing a glass substrate of the present embodiment.

如圖1所示,玻璃基板係經過包含熔解步驟ST1、澄清步驟ST2、均質化步驟ST3、成形步驟ST4、冷卻步驟ST5、及切斷步驟ST6之各種步驟所製造。 As shown in FIG. 1, the glass substrate is manufactured through various steps including a melting step ST1, a clarification step ST2, a homogenization step ST3, a molding step ST4, a cooling step ST5, and a cutting step ST6.

於熔解步驟ST1中,加熱並熔解玻璃原料。玻璃原料包含SiO2、Al2O3等組成。已完全熔解之玻璃原料成為熔融玻璃。 In the melting step ST1, the glass raw material is heated and melted. The glass raw material contains a composition of SiO 2 , Al 2 O 3 or the like. The glass material that has been completely melted becomes molten glass.

於澄清步驟ST2中,對熔融玻璃進行澄清。具體而言,將熔融玻璃中所含之氣體成分自熔融玻璃釋出,或者將氣體成分吸收至熔融玻璃中。 In the clarification step ST2, the molten glass is clarified. Specifically, the gas component contained in the molten glass is released from the molten glass, or the gas component is absorbed into the molten glass.

於均質化步驟ST3中,將熔融玻璃均質化。 In the homogenization step ST3, the molten glass is homogenized.

於成形步驟ST4中,利用下拉法(具體而言,溢流下拉法)使熔融玻璃成形為片狀之玻璃、即平板玻璃。 In the molding step ST4, the molten glass is formed into a sheet-shaped glass, that is, a flat glass by a down-draw method (specifically, an overflow down-draw method).

於冷卻步驟ST5中,對成形步驟ST4中已成形之平板玻璃進行緩冷。於該冷卻步驟ST5中,平板玻璃被冷卻至接近室溫。 In the cooling step ST5, the formed flat glass in the forming step ST4 is slowly cooled. In this cooling step ST5, the plate glass is cooled to near room temperature.

於切斷步驟ST6中,將已被冷卻至接近室溫之平板玻璃每隔特定之長度切斷而製成素板玻璃。 In the cutting step ST6, the plate glass which has been cooled to near room temperature is cut at a specific length to form a plain glass.

再者,每隔特定之長度切斷而成之素板玻璃其後經進一步切斷,進行研削、研磨、洗淨、檢查而成為玻璃基板,用於液晶顯示器等平板顯示器。 Further, the plain plate glass cut at a specific length is further cut, ground, polished, washed, and inspected to form a glass substrate, and used for a flat panel display such as a liquid crystal display.

其次,對用於本實施形態之玻璃基板之製造方法中的玻璃基板製造裝置進行說明。 Next, a glass substrate manufacturing apparatus used in the method of manufacturing a glass substrate of the present embodiment will be described.

圖2係表示玻璃基板製造裝置100之模式圖。 FIG. 2 is a schematic view showing a glass substrate manufacturing apparatus 100.

玻璃基板之製造裝置100主要具有熔解裝置200、及成形裝置300。 The glass substrate manufacturing apparatus 100 mainly has a melting apparatus 200 and a molding apparatus 300.

熔解裝置200係用以進行熔解步驟ST1、澄清步驟ST2、及均質化 步驟ST3之裝置。如圖2所示,熔解裝置200具有熔解槽201、澄清槽202、攪拌槽203、第1配管204、及第2配管205。 The melting device 200 is configured to perform a melting step ST1, a clarification step ST2, and a homogenization The device of step ST3. As shown in FIG. 2, the melting apparatus 200 has a melting tank 201, a clarification tank 202, a stirring tank 203, a first piping 204, and a second piping 205.

熔解槽201係用以熔解玻璃原料之槽。於熔解槽201中,進行熔解步驟ST1。 The melting tank 201 is a tank for melting glass raw materials. In the melting tank 201, a melting step ST1 is performed.

澄清槽202係用以自已於熔解槽201中熔解之熔融玻璃去除氣泡之槽。藉由將自熔解槽201送入之熔融玻璃於澄清槽202中進一步加熱,而促進熔融玻璃之脫泡。於澄清槽202中,進行澄清步驟ST2。 The clarification tank 202 is a tank for removing bubbles from the molten glass which has been melted in the melting tank 201. Defoaming of the molten glass is promoted by further heating the molten glass fed from the melting tank 201 in the clarification tank 202. In the clarification tank 202, a clarification step ST2 is performed.

攪拌槽203係利用攪拌器攪拌熔融玻璃。於攪拌槽203中,進行均質化步驟ST3。 The stirring tank 203 stirs the molten glass by a stirrer. In the stirring tank 203, a homogenization step ST3 is performed.

第1配管204及第2配管205係鉑族元素或鉑族元素之合金製之配管。第1配管204係連接澄清槽202與攪拌槽203之配管。第2配管205係連接攪拌槽203與成形裝置300之配管。 The first pipe 204 and the second pipe 205 are pipes made of an alloy of a platinum group element or a platinum group element. The first pipe 204 is a pipe connecting the clarification tank 202 and the stirring tank 203. The second pipe 205 is connected to the pipe of the stirring tank 203 and the molding apparatus 300.

成形裝置300係用以進行成形步驟ST4及冷卻步驟ST5之裝置。 The forming apparatus 300 is a device for performing the forming step ST4 and the cooling step ST5.

圖3係表示成形裝置300所含之成形爐室30之概略之側視圖。 FIG. 3 is a schematic side view showing the forming furnace chamber 30 included in the forming apparatus 300.

如圖3所示,成形裝置300於最上部具備成形爐室30。成形爐室30具備爐壁24作為外壁,且藉由分隔構件20而與下側之爐室進行區分。於成形爐室30之內部,配置有成形體14及複數個發熱體28。於成形體14之周圍,設置有分隔成形體14與發熱體28之內部間隔壁16。 As shown in FIG. 3, the molding apparatus 300 is provided with the shaping furnace chamber 30 in the uppermost part. The forming furnace chamber 30 is provided with a furnace wall 24 as an outer wall, and is distinguished from the lower furnace chamber by the partition member 20. Inside the forming furnace chamber 30, a molded body 14 and a plurality of heat generating bodies 28 are disposed. An inner partition wall 16 that partitions the molded body 14 and the heat generating body 28 is provided around the molded body 14.

成形體14係用以進行成形步驟ST4之裝置,且設置於成形爐室30。成形體14具有利用溢流下拉法使自熔解裝置200流入之熔融玻璃成形為片狀之玻璃基板(平板玻璃G)的功能。成形體14係於垂直方向切斷之剖面形狀具有楔形形狀,且例如由包含鋯石、氧化鋯、YPO4、Al2O3、SiO2、SiC、SiN及該等之組合之耐火磚所構成。於成形體14之上部,形成有收容自熔解裝置200流入之熔融玻璃MG之溝槽部18。成形體14之側面14b係以供自溝槽部18溢流之熔融玻璃MG流下之方式,沿鉛垂方向形成。成形體14之傾斜面14c係以於成形體14之 兩側面14b、14b流下之熔融玻璃MG於成形體14之楔形形狀之剖面之頂點即最下端部14d合流的方式,相對於側面14b傾斜。 The formed body 14 is a device for performing the forming step ST4 and is disposed in the forming furnace chamber 30. The molded body 14 has a function of molding the molten glass flowing from the melting device 200 into a sheet-shaped glass substrate (flat glass G) by an overflow down-draw method. The formed body 14 has a wedge shape in a cross-sectional shape cut in the vertical direction, and is composed of, for example, refractory bricks including zircon, zirconia, YPO 4 , Al 2 O 3 , SiO 2 , SiC, SiN, and the like. . A groove portion 18 that accommodates the molten glass MG flowing from the melting device 200 is formed in the upper portion of the molded body 14. The side surface 14b of the molded body 14 is formed in the vertical direction so that the molten glass MG overflowing from the groove portion 18 flows down. The inclined surface 14c of the molded body 14 is inclined with respect to the side surface 14b such that the molten glass MG flowing down the both side faces 14b and 14b of the molded body 14 merges with the lowermost end portion 14d which is the apex of the wedge-shaped cross section of the molded body 14.

內部間隔壁16係配置於發熱體28與成形體14之間,且以包圍成形體14之方式配置於成形體14之周圍。內部間隔壁16係由SiC燒結體構成,更詳細而言,係由高密度之燒結SiC之板構成。內部間隔壁16較佳為由SiC之含有率為95wt%(重量%)以上之SiC燒結體構成。又,就提高內部間隔壁16之溫度之均勻性之觀點而言,較佳為使用導熱率於1200℃下為20W/(m.K)以上、更佳為25W/(m.K)以上、進而較佳為30W/(m.K)以上之SiC燒結體。上述導熱率之上限係設為例如490W/(m.K)。又,就防止內部間隔壁16之氧化膨脹之觀點而言,構成內部間隔壁16之SiC燒結體之開氣孔率係設為1%以下。SiC燒結體之開氣孔率較佳為0.8%以下,進而較佳為0.6%以下。又,SiC燒結體之開氣孔率係設為例如超過0%。此處,所謂開氣孔率係指於將試樣之外形容積設為1之情形時,其中所占之開氣孔部分之容積的百分比,例如,可藉由JIS R 1634:1998中規定之測定方法進行測定。 The inner partition wall 16 is disposed between the heat generating body 28 and the molded body 14 and is disposed around the molded body 14 so as to surround the molded body 14 . The inner partition wall 16 is composed of a SiC sintered body, and more specifically, a high-density sintered SiC plate. The inner partition wall 16 is preferably made of a SiC sintered body having a SiC content of 95% by weight or more. Further, from the viewpoint of improving the uniformity of the temperature of the internal partition wall 16, it is preferable to use a thermal conductivity of 20 W/(m.K) or more, more preferably 25 W/(m.K) or more at 1200 °C. Further, a SiC sintered body of 30 W/(m.K) or more is preferable. The upper limit of the above thermal conductivity is, for example, 490 W/(m.K). Moreover, from the viewpoint of preventing oxidative expansion of the inner partition wall 16, the open porosity of the SiC sintered body constituting the inner partition wall 16 is set to 1% or less. The open porosity of the SiC sintered body is preferably 0.8% or less, and more preferably 0.6% or less. Moreover, the open porosity of the SiC sintered body is set to, for example, more than 0%. Here, the open porosity is a percentage of the volume of the open pore portion in the case where the external volume of the sample is set to 1, for example, the measurement method specified in JIS R 1634:1998. The measurement was carried out.

於爐壁24與內部間隔壁16之間,設置有將爐壁24與內部間隔壁16之間的空間於橫方向上分隔之水平間隔壁26。水平間隔壁26係將成形爐室30之爐壁24與內部間隔壁16之間的空間分隔為上下鄰接之複數個空間的板狀之構件,且係例如包含鋯石、氧化鋯、YPO4、Al2O3、SiO2、SiC、SiN及該等之組合之隔熱構件。於由水平間隔壁26區劃而成之小空間分別配置有發熱體28。只要將成形爐室30分隔為複數個空間,且可利用發熱體28控制分隔之各空間之溫度即可,配置水平間隔壁26之位置、數量係任意。例如,每隔一定間隔,於與鄰接之發熱體28之距離成為一定的位置等處配置水平間隔壁26。又,水平間隔壁26之厚度可任意地設定,例如,可設為與內部間隔壁16之厚度相同,亦可設為與爐壁24之厚度相同。於水平間隔壁26與內部間隔壁16為相同 之材料之情形時,藉由將厚度設為相同,而可使水平間隔壁26及內部間隔壁16傳導之傳熱量相等,將熔融玻璃MG於寬度方向上均勻地加熱。又,於對內部間隔壁16及水平間隔壁26使用SiC燒結體之情形時,為了將熔融玻璃MG於寬度方向上均勻地加熱,亦可使設置於更靠近熔融玻璃MG之位置的內部間隔壁16之導熱率高於水平間隔壁26之導熱率。又,亦可使內部間隔壁16之開氣孔率低於水平間隔壁26之開氣孔率。又,為提高位於成形體14之最下端部14d之熔融玻璃MG的溫度之均勻性,亦可使位於與最下端部14d對向之位置的內部間隔壁16的導熱率高於位於與兩側面14b、14b對向之位置的內部間隔壁16之導熱率。又,亦可使位於與最下端部14d對向之位置的內部間隔壁16的開氣孔率低於位於與兩側面14b、14b對向之位置的內部間隔壁16之開氣孔率。 Between the furnace wall 24 and the internal partition wall 16, a horizontal partition wall 26 that partitions the space between the furnace wall 24 and the internal partition wall 16 in the lateral direction is provided. The horizontal partition wall 26 is a plate-shaped member that divides the space between the furnace wall 24 and the inner partition wall 16 of the forming furnace chamber 30 into a plurality of spaces adjacent to each other, and includes, for example, zircon, zirconia, YPO 4 , A heat insulating member of Al 2 O 3 , SiO 2 , SiC, SiN, and the like. A heating element 28 is disposed in each of the small spaces partitioned by the horizontal partition walls 26. The forming furnace chamber 30 is divided into a plurality of spaces, and the temperature of each space partitioned by the heating element 28 can be controlled, and the position and number of the horizontal partition walls 26 are arbitrary. For example, at predetermined intervals, the horizontal partition wall 26 is disposed at a position where the distance from the adjacent heat generating body 28 is constant. Further, the thickness of the horizontal partition wall 26 can be arbitrarily set, for example, the same as the thickness of the inner partition wall 16, or the same as the thickness of the furnace wall 24. In the case where the horizontal partition wall 26 and the inner partition wall 16 are the same material, the heat transfer amount of the horizontal partition wall 26 and the inner partition wall 16 can be made equal by setting the thicknesses to be the same, and the molten glass MG is made to have a width. Heat evenly in the direction. In the case where the SiC sintered body is used for the inner partition 16 and the horizontal partition 26, the inner partition wall provided closer to the molten glass MG may be used in order to uniformly heat the molten glass MG in the width direction. The thermal conductivity of 16 is higher than the thermal conductivity of the horizontal partition wall 26. Further, the open porosity of the inner partition wall 16 may be made lower than the open porosity of the horizontal partition wall 26. Further, in order to increase the uniformity of the temperature of the molten glass MG located at the lowermost end portion 14d of the molded body 14, the thermal conductivity of the inner partition wall 16 located at a position opposed to the lowermost end portion 14d may be higher than that of the two sides. The thermal conductivity of the inner partition wall 16 at the position opposite to 14b, 14b. Further, the opening ratio of the inner partition wall 16 located at a position opposed to the lowermost end portion 14d may be lower than the open porosity of the inner partition wall 16 located at a position opposed to the side surfaces 14b and 14b.

發熱體28係由例如利用電阻加熱、介電加熱、微波加熱、感應加熱而發熱之封裝加熱器、插裝加熱器(cartridge heater)或陶瓷加熱器等所構成,可任意地調整發熱量(溫度)。配置於成形爐室30之各發熱體28可獨立地控制發熱量,例如可以如下方式形成溫度梯度:於熔融玻璃MG在成形爐室30內向下方前進時,溫度以成形體14之溝槽部18、兩側面14b、14b、傾斜面14c、最下端部14d之順序依次下降。即,較佳為以內部間隔壁16之面向成形體14之側之壁面的溫度隨著向熔融玻璃MG流動之方向前進而溫度下降的方式,調整複數個發熱體28之發熱量。 The heating element 28 is composed of, for example, a package heater that generates heat by resistance heating, dielectric heating, microwave heating, or induction heating, a cartridge heater, or a ceramic heater, and can arbitrarily adjust the amount of heat generation (temperature). ). Each of the heat generating bodies 28 disposed in the forming furnace chamber 30 can independently control the amount of heat generation. For example, a temperature gradient can be formed in such a manner that when the molten glass MG advances downward in the forming furnace chamber 30, the temperature is the groove portion 18 of the formed body 14. The order of the two side faces 14b, 14b, the inclined surface 14c, and the lowermost end portion 14d is sequentially lowered. In other words, it is preferable to adjust the amount of heat generation of the plurality of heat generating bodies 28 such that the temperature of the wall surface of the inner partition wall 16 facing the molded body 14 advances in a direction in which the molten glass MG flows.

分隔構件20係配置於成形體14之最下端部14d之附近的板狀之構件,例如為包含鋯石、氧化鋯、YPO4、Al2O3、SiO2、SiC、SiN及該等之組合之隔熱構件。分隔構件20係以前端互相對向之方式設置有一對。分隔構件20係以成為水平之方式配置於自成形體14之最下端部14d流下之平板玻璃G之厚度方向的兩側。分隔構件20係藉由保留供 平板玻璃通過之間隙而將其上下之環境分隔、進行隔熱,而抑制熱自分隔構件20之上側向下側移動。於分隔構件20之下方配置有冷卻輥22。 The partition member 20 is a plate-shaped member disposed in the vicinity of the lowermost end portion 14d of the molded body 14, and includes, for example, zircon, zirconia, YPO 4 , Al 2 O 3 , SiO 2 , SiC, SiN, and the like. Insulation member. The partition member 20 is provided with a pair in such a manner that the front ends face each other. The partition member 20 is disposed on both sides in the thickness direction of the sheet glass G flowing down from the lowermost end portion 14d of the molded body 14 so as to be horizontal. The partition member 20 is thermally insulated by retaining the space above and below the gap through which the flat glass passes, and suppresses the heat from moving from the upper side to the lower side of the partition member 20. A cooling roll 22 is disposed below the partition member 20.

冷卻輥22係配置於位於分隔構件20之下方之爐室。又,冷卻輥22係以對向之方式配置於平板玻璃G之厚度方向之兩側且其寬度方向之兩端部分。冷卻輥22例如藉由通過其內部之空氣冷卻管進行空氣冷卻。平板玻璃G係於通過冷卻輥22時,與經空氣冷卻之冷卻輥22接觸之寬度方向之兩端部分的正背面受到冷卻。藉此,該兩端部之黏度被調整為特定值以上、例如109.0泊(10泊=1Pa.秒)以上。冷卻輥22係藉由傳遞驅動馬達之驅動力,而將平板玻璃G向下方拉伸。 The cooling roller 22 is disposed in a furnace chamber located below the partition member 20. Further, the cooling rolls 22 are disposed opposite to each other in the thickness direction of the sheet glass G and at both end portions in the width direction thereof. The cooling roller 22 is air-cooled, for example, by an air cooling pipe passing through the inside thereof. When the plate glass G is passed through the cooling roll 22, the front and back sides of the both end portions in the width direction which are in contact with the air-cooled cooling roll 22 are cooled. Thereby, the viscosity of the both ends is adjusted to a specific value or more, for example, 10 9.0 poise (10 poise = 1 Pa. second) or more. The cooling roller 22 stretches the sheet glass G downward by transmitting the driving force of the driving motor.

於成形爐室30之下方,設置有進行冷卻步驟ST5之未圖示之緩冷爐室。緩冷爐室沿平板玻璃G之流動而區劃為複數個爐室,沿平板玻璃G之流動而設置有複數個拉伸輥。拉伸輥係利用馬達進行驅動,將平板玻璃G向下方一面拉伸一面搬送。又,於各爐室,設置有用以調節平板玻璃G之周圍之環境之溫度之加熱器。藉由使用該加熱器控制平板玻璃G之周圍之環境之溫度,而控制平板玻璃G之溫度,且依據降低平板玻璃G之板厚偏差、翹曲、應變之溫度分佈,使平板玻璃G緩冷。 Below the forming furnace chamber 30, a slow cooling furnace chamber (not shown) that performs the cooling step ST5 is provided. The slow cooling furnace chamber is divided into a plurality of furnace chambers along the flow of the flat glass G, and a plurality of stretching rollers are disposed along the flow of the flat glass G. The stretching roll is driven by a motor, and the flat glass G is pulled while being pulled downward. Further, a heater for adjusting the temperature of the environment around the sheet glass G is provided in each furnace chamber. By using the heater to control the temperature of the environment around the flat glass G, the temperature of the flat glass G is controlled, and the flat glass G is slowly cooled according to the temperature distribution of the sheet thickness deviation, warpage, and strain of the flat glass G. .

切斷步驟ST6係藉由未圖示之切斷裝置進行。切斷裝置係配置於緩冷爐室之下方。切斷裝置係將於成形裝置300中流下之平板玻璃G在相對於其長度面垂直之方向上切斷的裝置。片狀之平板玻璃G係藉由利用切斷裝置進行切斷,而成為具有特定之長度之複數個素板。素板經進一步被切斷,經過端面加工、洗淨、檢查後進行捆包,從而作為玻璃基板而出貨。 The cutting step ST6 is performed by a cutting device (not shown). The cutting device is disposed below the slow cooling furnace chamber. The cutting device is a device that cuts the sheet glass G flowing down in the forming device 300 in a direction perpendicular to the longitudinal surface thereof. The sheet-shaped flat glass G is cut into a plurality of plain plates having a specific length by cutting with a cutting device. The plain plate is further cut, subjected to end surface processing, washed, inspected, and then packaged, and shipped as a glass substrate.

其次,對本實施形態之作用進行說明。 Next, the action of this embodiment will be described.

於成形步驟ST4中,於成形體14之溝槽部18流動之熔融玻璃MG 係於該溝槽部18之頂部溢流,並沿成形體14之兩側面14b、14b流下。然後,沿成形體14之兩側面14b、14b流下之熔融玻璃G經過傾斜面14c、14c,於成形體14之最下端部14d合流而成為平板玻璃G。平板玻璃G通過一對分隔構件20、20之間的狹縫狀之間隙,而被供給至成形爐室30之下方之緩冷爐室。 In the forming step ST4, the molten glass MG flowing in the groove portion 18 of the formed body 14 It overflows at the top of the groove portion 18 and flows down the two side faces 14b, 14b of the formed body 14. Then, the molten glass G which flows down along the both side surfaces 14b and 14b of the molded object 14 passes through the inclined surfaces 14c and 14c, and merges at the lowermost end portion 14d of the molded body 14 to become the sheet glass G. The sheet glass G is supplied to the slow cooling furnace chamber below the forming furnace chamber 30 through a slit-like gap between the pair of partition members 20 and 20.

此時,藉由發熱體28加熱內部間隔壁16,在經加熱之內部間隔壁16與流動於成形體14之熔融玻璃MG之間進行熱交換,熔融玻璃MG受到冷卻。 At this time, the internal partition 16 is heated by the heating element 28, and heat is exchanged between the heated internal partition 16 and the molten glass MG flowing through the molded body 14, and the molten glass MG is cooled.

成形爐室30內之包含氧氣之環境係保持為1000℃以上、例如1200℃左右之溫度,但藉由將內部間隔壁16暴露於如此高的溫度且包含氧氣之環境,使得構成內部間隔壁16之SiC燒結體自與氧氣接觸之部分開始氧化而變為SiO2。此時,若SiC燒結體之開氣孔率大於1%,則氧化不僅容易自表面而且容易自內部進行。於已進行內部氧化之場所,體積增加,故而會引起變形或進一步引起破裂。尤其是於在成形爐室30內形成高溫黏性較高之無鹼玻璃或包含微量鹼金屬之含微量鹼之玻璃的情形時,必須將成形爐室30內之溫度保持為高於先前之溫度。若使成形爐室30內之溫度高於先前,則會促進內部間隔壁16之變形,引起破裂。SiC燒結體係耐高溫、而且耐熱性或耐氧化性優異之材料。然而,SiC燒結體與氧氣反應之氧化起始溫度約為700℃,若處於該溫度以上則開始氧化,引起變形或進一步引起破裂。成形爐室30內之溫度如上所述為1000℃以上,故而SiC燒結體於成形爐室30內容易氧化。 The atmosphere containing oxygen in the forming furnace chamber 30 is maintained at a temperature of about 1000 ° C or higher, for example, about 1200 ° C, but the inner partition wall 16 is formed by exposing the inner partition wall 16 to such a high temperature and containing oxygen. The SiC sintered body starts to oxidize from the portion in contact with oxygen to become SiO 2 . At this time, if the open porosity of the SiC sintered body is more than 1%, the oxidation is not only easy to proceed from the surface but also easily from the inside. In places where internal oxidation has taken place, the volume increases, which may cause deformation or further cause cracking. In particular, in the case where an alkali-free glass having a high temperature and high viscosity or a glass containing a trace amount of an alkali metal is formed in the forming furnace chamber 30, the temperature in the forming furnace chamber 30 must be kept higher than the previous temperature. . If the temperature in the forming furnace chamber 30 is made higher than before, the deformation of the inner partition wall 16 is promoted to cause cracking. The SiC sintered system is excellent in resistance to high temperatures and excellent in heat resistance and oxidation resistance. However, the oxidation initiation temperature of the SiC sintered body reacted with oxygen is about 700 ° C, and if it is above this temperature, oxidation starts, causing deformation or further causing cracking. Since the temperature in the forming furnace chamber 30 is 1000 ° C or more as described above, the SiC sintered body is easily oxidized in the forming furnace chamber 30.

於本實施形態中,內部間隔壁16係使用開氣孔率為1%以下之SiC燒結體。因此,與包含氧氣之高溫之環境接觸的僅為表面,從而能抑制在組織內部進行SiC氧化。藉此,能抑制因內部間隔壁16之內部氧化所致之異常膨脹,而可抑制變形、表面之龜裂、破裂之產生。因 此,可防止內部間隔壁16之均熱效果降低,且提高玻璃基板之品質。又,可延長內部間隔壁16之壽命,且改善玻璃基板之生產性。又,若SiC燒結體氧化,則氧化物SiO2會完全覆蓋SiC燒結體表面而成為針對氧化之保護膜,故而能抑制內部間隔壁16之內部之氧化。 In the present embodiment, the inner partition wall 16 is a SiC sintered body having an open porosity of 1% or less. Therefore, only the surface is in contact with the environment containing the high temperature of oxygen, so that SiC oxidation inside the tissue can be suppressed. Thereby, abnormal expansion due to internal oxidation of the internal partition wall 16 can be suppressed, and deformation, surface cracking, and cracking can be suppressed. Therefore, the uniform heat effect of the inner partition wall 16 can be prevented from being lowered, and the quality of the glass substrate can be improved. Further, the life of the inner partition wall 16 can be prolonged, and the productivity of the glass substrate can be improved. Further, when the SiC sintered body is oxidized, the oxide SiO 2 completely covers the surface of the SiC sintered body and becomes a protective film for oxidation, so that oxidation of the inside of the internal partition 16 can be suppressed.

又,成形體14上之熔融玻璃MG並不與發熱體28直接進行熱交換而是介隔內部間隔壁16進行熱交換。因此,即便各發熱體28之溫度視場所而不均,亦藉由內部間隔壁16之均熱效果而幾乎不會對成形體14上之熔融玻璃MG之溫度造成其溫度不均之影響。圖4係說明發熱體28周邊之溫度分佈之圖,且係對熔融玻璃MG、內部間隔壁16及發熱體18自圖3之上方向下方觀察之圖。若發熱體28發熱,則自發熱體28發出之熱會以發熱體28為中心呈球狀地擴散,在由內部間隔壁16、水平間隔壁26及爐壁24所包圍之小空間內,形成以發熱體28為中心之球狀之溫度分佈。若呈球狀地擴散之熱到達內部間隔壁16,則熱會被內部間隔壁16吸收,熱被蓄積於內部間隔壁16。由於在內部間隔壁16存在均熱效果,故而蓄積於內部間隔壁16之熱會沿內部間隔壁16之側壁呈平面狀地釋出。因此,於內部間隔壁16內之空間內,沿內部間隔壁16,至少沿熔融玻璃MG之寬度方向形成有大致一定的溫度分佈。藉由沿該內部間隔壁16之大致一定的溫度分佈,熔融玻璃MG之溫度於熔融玻璃MG之寬度方向上變得均勻,於成形體14之最下端部14d,平板玻璃G之溫度例如約為1150℃且於寬度方向上變得均勻。 Further, the molten glass MG on the molded body 14 does not directly exchange heat with the heat generating body 28 but exchanges heat through the inner partition wall 16 . Therefore, even if the temperature of each of the heat generating bodies 28 is uneven depending on the place, the temperature unevenness of the molten glass MG on the molded body 14 is hardly affected by the heat equalizing effect of the inner partition walls 16. Fig. 4 is a view for explaining the temperature distribution around the heating element 28, and is a view of the molten glass MG, the internal partition 16 and the heating element 18 as viewed from the upper side in Fig. 3 . When the heating element 28 generates heat, the heat generated from the heating element 28 is diffused in a spherical shape around the heating element 28, and is formed in a small space surrounded by the internal partition wall 16, the horizontal partition wall 26, and the furnace wall 24. The spherical temperature distribution centering on the heating element 28. When the heat that has spread in a spherical shape reaches the inner partition wall 16, heat is absorbed by the inner partition wall 16, and heat is accumulated in the inner partition wall 16. Since the soaking effect is present in the inner partition wall 16, the heat accumulated in the inner partition wall 16 is released in a planar shape along the side wall of the inner partition wall 16. Therefore, in the space inside the inner partition wall 16, a substantially constant temperature distribution is formed along the inner partition wall 16 at least along the width direction of the molten glass MG. By the substantially constant temperature distribution along the inner partition wall 16, the temperature of the molten glass MG becomes uniform in the width direction of the molten glass MG, and at the lowermost end portion 14d of the molded body 14, the temperature of the flat glass G is, for example, approximately 1150 ° C and became uniform in the width direction.

又,本實施形態之內部間隔壁16之導熱率於1200℃下為20W/(m.K)以上,更佳為25W/(m.K)以上,進而較佳為30W/(m.K)以上。因此,即便各發熱體28之溫度視場所而不均,內部間隔壁16之溫度於熔融玻璃MG之寬度方向上視場所之不均亦變少,從而溫度於熔融玻璃MG之寬度方向上容易變得均勻。即,能提高內部間隔壁16之均熱效果,使流動於成形體14之熔融玻璃MG之溫度於熔融玻璃MG之 寬度方向上更均勻地冷卻,從而提高玻璃基板之品質。 Further, the thermal conductivity of the internal partition 16 of the present embodiment is 20 W/(m.K) or more at 1200 ° C, more preferably 25 W/(m.K) or more, and still more preferably 30 W/(m.K). the above. Therefore, even if the temperature of each of the heat generating elements 28 is uneven depending on the place, the temperature of the inner partition wall 16 is less likely to be uneven in the width direction of the molten glass MG, and the temperature is liable to change in the width direction of the molten glass MG. Evenly. That is, the soaking effect of the inner partition wall 16 can be increased, and the temperature of the molten glass MG flowing to the molded body 14 can be increased to the molten glass MG. More uniform cooling in the width direction improves the quality of the glass substrate.

成形爐室30內之爐壁24與內部間隔壁16之間的環境係藉由發熱體28而保持為所需之溫度。另一方面,流動於成形體14之熔融玻璃MG必須伴隨流下而逐漸降低溫度。 The environment between the furnace wall 24 and the internal partition wall 16 in the forming furnace chamber 30 is maintained at a desired temperature by the heating element 28. On the other hand, the molten glass MG flowing in the molded body 14 must gradually decrease in temperature accompanying the flow down.

本實施形態中,於成形爐室30之爐壁24與內部間隔壁16之間,設置有將成形爐室30分隔為上下鄰接之複數個空間之水平間隔壁26。於經水平間隔壁26分隔之複數個空間設置有複數個發熱體28,各發熱體28可獨立地控制發熱量。水平間隔壁26係由隔熱性較高之材料、例如與內部間隔壁16相比隔熱性較高之材料所構成。藉此,可將作為於成形體之表面流下之熔融玻璃之對向面的內部間隔壁面之溫度於流下方向任意變更,可對熔融玻璃於熔融玻璃之流下方向上附加所需之溫度差,從而能提高玻璃基板之品質。再者,為了對熔融玻璃於流下方向上附加所需之溫度差,亦可基於設置於成形爐室30之測溫電阻體、熱電偶等溫度感測器(未圖示)所計測出之溫度,調整發熱體28之發熱量。例如,於以溫度感測器所計測出之溫度於成形體14之兩側面14b、14b及傾斜面14c相同之情形時,藉由增加位於與兩側面14b、14b對向之位置的發熱體28之發熱量,或者抑制位於與傾斜面14c對向之位置的發熱體28之發熱量,而可在流動於兩側面14b、14b及傾斜面14c之熔融玻璃MG中於流下方向附加溫度差。 In the present embodiment, a horizontal partition wall 26 that partitions the forming furnace chamber 30 into a plurality of spaces adjacent to each other is provided between the furnace wall 24 of the forming furnace chamber 30 and the internal partition wall 16. A plurality of heat generating bodies 28 are provided in a plurality of spaces partitioned by the horizontal partition walls 26, and each of the heat generating bodies 28 can independently control the amount of heat generation. The horizontal partition wall 26 is made of a material having a high heat insulating property, for example, a material having a higher heat insulating property than the inner partition wall 16. Thereby, the temperature of the inner partition wall surface of the opposing surface of the molten glass flowing down the surface of the molded body can be arbitrarily changed in the downward flow direction, and the required temperature difference can be added to the molten glass below the flow of the molten glass. Can improve the quality of the glass substrate. Further, in order to add a required temperature difference to the molten glass below the flow, the temperature measured by a temperature sensor (not shown) such as a temperature measuring resistor or a thermocouple provided in the forming furnace chamber 30 may be used. The heat generated by the heating element 28 is adjusted. For example, when the temperature measured by the temperature sensor is the same on both side faces 14b, 14b and the inclined surface 14c of the molded body 14, the heat generating body 28 located at a position opposed to the both side faces 14b, 14b is increased. The amount of heat generated or the amount of heat generated by the heat generating body 28 located at a position facing the inclined surface 14c is increased, and a temperature difference can be added to the molten glass MG flowing between the both side faces 14b and 14b and the inclined surface 14c in the downward direction.

本實施形態之製造方法適於必須將成形爐內保持為高溫之情形。具體而言,適於成形爐內為1000℃以上之情形,進而適於1200℃以上之情形,尤其適於1300℃以上之情形。 The manufacturing method of this embodiment is suitable for the case where it is necessary to maintain the inside of the forming furnace at a high temperature. Specifically, it is suitable for a case where the inside of the forming furnace is 1000 ° C or higher, and is more suitable for the case of 1200 ° C or higher, and particularly suitable for the case of 1300 ° C or higher.

於使用高溫黏性較大之玻璃(熔融玻璃)製造玻璃基板之情形時,必須將成形爐內保持為高溫,因此,本實施形態適於使用高溫黏性較大之玻璃(熔融玻璃)製造玻璃基板時。具體而言,本實施形態適於使用在玻璃(熔融玻璃)之黏度為105泊時為1000℃以上之玻璃(熔融玻 璃)製造玻璃基板時。又,黏度為105泊時之熔融玻璃之溫度之上限例如為1700℃。 When a glass substrate is produced using a glass having a high temperature viscosity (molten glass), it is necessary to maintain the inside of the forming furnace at a high temperature. Therefore, the present embodiment is suitable for producing glass using glass having a high viscosity and high viscosity (molten glass). When the substrate is used. Specifically, in the present embodiment, when a glass substrate is produced using glass (molten glass) having a viscosity of glass (melted glass) of 10 5 poise and 1000 ° C or more. Further, the upper limit of the temperature of the molten glass at a viscosity of 10 5 poise is, for example, 1700 °C.

又,無鹼玻璃或包含微量鹼金屬之含微量鹼之玻璃之高溫黏性較高,因此,本實施形態適於製造由無鹼玻璃或含微量鹼之玻璃所構成之玻璃基板的情形。作為無鹼玻璃之一例,以質量%表示,可列舉以下組成範圍之玻璃基板。 Further, since the alkali-free glass or the glass containing a trace amount of an alkali metal has a high temperature viscosity, the present embodiment is suitable for producing a glass substrate composed of an alkali-free glass or a glass containing a small amount of alkali. As an example of the alkali-free glass, the glass substrate of the following composition range is shown by mass %.

含有SiO2:50~70%、Al2O3:0~25%、B2O3:1~15%、MgO:0~10%、CaO:0~20%、SrO:0~20%、BaO:0~10%、RO:5~30%(其中,R為Mg、Ca、Sr及Ba之合量)之無鹼玻璃。 SiO 2 : 50 to 70%, Al 2 O 3 : 0 to 25%, B 2 O 3 : 1 to 15%, MgO: 0 to 10%, CaO: 0 to 20%, SrO: 0 to 20%, BaO: 0 to 10%, RO: 5 to 30% (wherein R is a combination of Mg, Ca, Sr, and Ba) of alkali-free glass.

再者,如上所述,玻璃基板亦可為包含微量鹼金屬之含微量鹼之玻璃。於含有鹼金屬之情形時,較佳為包含R'2O之合計為0.10%以上且0.5%以下、較佳為0.20%以上且0.5%以下(其中,R'為選自Li、Na及K中之至少1種,為玻璃基板含有者)。當然,R'2O之合計亦可未達0.10%。即,本發明適於製造使用有無鹼玻璃或微量鹼之玻璃基板之平板顯示器之情形。 Further, as described above, the glass substrate may be a glass containing a trace amount of an alkali metal containing a trace amount of alkali. In the case of containing an alkali metal, the total content of R' 2 O is preferably 0.10% or more and 0.5% or less, preferably 0.20% or more and 0.5% or less (wherein R' is selected from the group consisting of Li, Na, and K. At least one of them is a glass substrate.) Of course, the total of R' 2 O may also be less than 0.10%. That is, the present invention is suitable for the case of producing a flat panel display using a glass substrate having an alkali-free glass or a trace amount of alkali.

以上,對本發明之實施形態詳細地進行了說明,但本發明並不限定於上述實施形態,亦可於不脫離本發明之主旨之範圍內進行各種改良或變更。 The embodiments of the present invention have been described in detail above, but the present invention is not limited to the embodiments described above, and various modifications and changes can be made without departing from the spirit and scope of the invention.

[實施例] [Examples]

使用在上述實施形態中已說明之玻璃基板製造裝置,製造玻璃基板。作為內部間隔壁,使用有SiC之含有率為99wt%、導熱率於 1200℃下為25W/(m.K)、開氣孔率為1%之高密度的燒結SiC。 A glass substrate was produced using the glass substrate manufacturing apparatus described in the above embodiment. As the internal partition, the content of SiC used is 99 wt%, and the thermal conductivity is High density sintered SiC at 25 W/(m.K) at 1200 ° C and an open porosity of 1%.

於開始使用內部間隔壁後2年以內,未出現因內部間隔壁之氧化膨脹而導致變形之事例,能穩定地製造玻璃基板。 Within two years after the start of the use of the internal partition, there is no case where deformation due to oxidative expansion of the internal partition wall occurs, and the glass substrate can be stably produced.

使用上述實施形態中已說明之玻璃基板之製造裝置,製造玻璃基板。作為內部間隔壁,使用有SiC之含有率為98wt%、導熱率於1200℃下為30W/(m.K)、開氣孔率為0.6%之高密度之燒結SiC。 A glass substrate was produced using the apparatus for manufacturing a glass substrate described in the above embodiment. As the internal partition, sintered SiC having a high content density of 98 wt% of SiC, a heat conductivity of 30 W/(m.K) at 1200 ° C, and an open porosity of 0.6% was used.

使用上述實施形態中已說明之玻璃基板之製造裝置,製造玻璃基板。作為內部間隔壁,使用有SiC之含有率為95wt%、導熱率於1200℃下為35W/mK、開氣孔率為0.5%之高密度的燒結SiC。 A glass substrate was produced using the apparatus for manufacturing a glass substrate described in the above embodiment. As the internal partition, sintered SiC having a high content of SiC of 95% by weight, a thermal conductivity of 35 W/mK at 1200 ° C, and an open porosity of 0.5% was used.

於開始使用內部間隔壁後3年以內,未發現因內部間隔壁之氧化膨脹導致變形之事例,能穩定地製造玻璃基板。 After three years from the start of the use of the internal partition, no deformation was observed due to oxidative expansion of the internal partition, and the glass substrate was stably produced.

[比較例] [Comparative example]

作為內部間隔壁,使用有SiC之含有率為74wt%、導熱率於350℃下為12.6W/(m.K)、開氣孔率為14.6%之氮矽鍵SiC,除此以外,與實施例同樣地製造玻璃基板。 The internal partition was made of a nitrogen-niobium bond SiC having a SiC content of 74 wt%, a thermal conductivity of 12.6 W/(m.K) at 350 ° C, and an open porosity of 14.6%. A glass substrate was produced in the same manner.

於開始使用內部間隔壁後約18個月後,因內部間隔壁之氧化膨脹所致之變形變大至無法容許之程度,以30%左右之頻度產生必需更換內部間隔壁者。 About 18 months after the start of the use of the internal partition wall, the deformation due to the oxidative expansion of the internal partition wall becomes large to the extent that it is unacceptable, and the frequency of about 30% is required to generate the internal partition.

根據以上結果,上述實施形態之效果明確。 Based on the above results, the effects of the above embodiments are clear.

14‧‧‧成形體 14‧‧‧Formed body

14b‧‧‧側面 14b‧‧‧ side

14c‧‧‧傾斜面 14c‧‧‧ sloped surface

14d‧‧‧最下端部 14d‧‧‧Bottom

16‧‧‧內部間隔壁 16‧‧‧Internal partition

18‧‧‧溝槽部 18‧‧‧ Groove Department

20‧‧‧分隔構件 20‧‧‧Parts

22‧‧‧冷卻輥 22‧‧‧Cooling roller

24‧‧‧爐壁 24‧‧‧ furnace wall

26‧‧‧水平間隔壁 26‧‧‧ horizontal partition

28‧‧‧發熱體 28‧‧‧heating body

30‧‧‧成形爐室 30‧‧‧Forming furnace room

300‧‧‧成形裝置 300‧‧‧Forming device

G‧‧‧平板玻璃 G‧‧‧ flat glass

MG‧‧‧熔融玻璃 MG‧‧‧ molten glass

Claims (5)

一種玻璃基板之製造方法,其特徵在於:其係具有利用下拉法使熔融玻璃成形為平板玻璃之步驟者,且於成形爐室設置發熱體、成形體、及分隔上述發熱體與上述成形體之內部間隔壁,上述內部間隔壁係使用開氣孔率為1%以下之SiC燒結體,藉由上述發熱體並介隔上述內部間隔壁而將流動於上述成形體之上述熔融玻璃加熱,上述內部間隔壁之導熱率於1200℃下為20W/(m.K)以上,且上述SiC燒結體之SiC含有率為95重量%以上。 A method for producing a glass substrate, comprising: forming a molten glass into a flat glass by a down-draw method; and providing a heating element, a molded body, and a heat separating body and the molded body in the forming furnace chamber; In the inner partition wall, the inner partition wall is a SiC sintered body having an open porosity of 1% or less, and the molten glass flowing through the molded body is heated by the heat generating body and interposed between the inner partition walls, and the inner partition The thermal conductivity of the partition wall is 20 W/(m.K) or more at 1200 ° C, and the SiC content of the SiC sintered body is 95% by weight or more. 如請求項1之玻璃基板之製造方法,其中上述熔融玻璃係於105泊(poise)之黏度時為1000℃以上。 The method of producing a glass substrate of the requested item 1, wherein when the melt viscosity of the glass based on 105 poises (Poise) less than 1000 ℃. 如請求項1或2之玻璃基板之製造方法,其中上述玻璃基板為無鹼玻璃或含微量鹼之玻璃。 The method for producing a glass substrate according to claim 1 or 2, wherein the glass substrate is an alkali-free glass or a glass containing a trace amount of alkali. 如請求項1或2之玻璃基板之製造方法,其中將上述成形爐室之爐壁與上述內部間隔壁之間的空間利用水平間隔壁區劃為上下鄰接之複數個小空間,且於上述小空間之各者配置上述發熱體。 The method of manufacturing the glass substrate of claim 1 or 2, wherein the space between the furnace wall of the forming furnace chamber and the inner partition wall is partitioned into a plurality of small spaces adjacent to each other by a horizontal partition wall, and in the small space Each of the heat generating bodies is disposed. 如請求項4之玻璃基板之製造方法,其係以上述內部間隔壁之面向上述成形體之側之壁面的溫度隨著向上述熔融玻璃流動之方向前進而溫度下降的方式,調整上述發熱體之發熱量。 The method for producing a glass substrate according to claim 4, wherein the temperature of the wall surface facing the side of the molded body of the inner partition wall is adjusted so as to proceed in a direction in which the molten glass flows, and the heat generating body is adjusted. Calorie.
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