CN107602153A

CN107602153A - A kind of method that SiC plate surfaces oxide layer quickly thickens

Info

Publication number: CN107602153A
Application number: CN201710655528.6A
Authority: CN
Inventors: 何志锋; 刘琎; 李文军
Original assignee: Irico Hefei LCD Glass Co Ltd
Current assignee: Irico Hefei LCD Glass Co Ltd
Priority date: 2017-08-03
Filing date: 2017-08-03
Publication date: 2018-01-19

Abstract

The present invention relates to a kind of method that SiC plate surfaces oxide layer quickly thickens, concrete technical scheme is：Under base plate glass normal production conditions, softened water is passed through into forming furnace and produces water steam medium, the oxygen in free silica and air in the SiC plates of forming furnace both sides, in forming furnace under the ambiance full of water vapour, high-temperature chemical reaction quickly occurs：Si+O2 → SiO2, the SiO2 diaphragms of densification are formed on carborundum plate surface, realize that the quick of SiC plate surface oxide layers thickens.Fine and close SiO2 diaphragms; on the one hand the performance of carbofrax material is enhanced, its actual life is effectively extended, on the other hand solves SiC material and occur foamed phenomenon at high temperature; the problem of causing base plate glass surface contamination, the quality requirements of glass product are effectively ensured.

Description

A kind of method that SiC plate surfaces oxide layer quickly thickens

Technical field

The invention belongs to liquid crystal substrate glass manufacturing field, and in particular to what a kind of SiC plate surfaces oxide layer quickly thickened Method.

Background technology

During the manufacturing of liquid crystal substrate glass, to ensure the shaping area especially each heater pair in shaping area top The uniform temperature of glass plate heating, carborundum plate is installed between each heater and glass plate, each heater in shaping area is as hair Heat caused by thermal source, by the even temperature effect of carborundum plate, in indirect transfer to glass plate, glass product is effectively ensured Quality requirements.

In the prior art, before shaping furnace apparatus assembling, surface oxidation treatment is carried out to carborundum plate material, forms one Fixed SiO₂Diaphragm, but completed in Muffle furnace, the assembling of shaping furnace apparatus, lifting, equipment is progressively warming up to 1100 DEG C by room temperature During left and right, carborundum plate surface oxide layer can be by compared with havoc：Due to SiO₂Thermal coefficient of expansion becomes below 500 DEG C Change larger, and the change of the thermal coefficient of expansion of silicon carbide base material is little, such SiO₂Thermal stress changes greatly between diaphragm and base material, Diaphragm is easily rupturable.The inertia oxidation of carborundum can produce gaseous product, and this will produce foamed phenomenon, protect the oxidation of SiO2 films Shield effect reduces.SiC oxidation product is glassy state SiO₂Film, with the rise of oxidizing temperature, about 800 DEG C~1140 DEG C, glass Glass state SiO₂Crystallization occurs for film, and phase transformation will produce Volume Changes, and this causes SiO₂Protection membrane structure become loose, and then with SiC bases Body is combined loosely, and oxidation protection effect is die-offed.In addition, under certain condition, SiO₂Film can not also be formed, and this will all cause to be carbonized The performance of silicon materials reduces, and influences its actual life, and the foamed phenomenon of carborundum plate also results in glass Plate surface pollutes, and causes the bad loss of glass plate, greatly affected product quality and production yield.

The content of the invention

Technical scheme, it is to provide a kind of method that SiC plate surfaces oxide layer quickly thickens, in base plate glass Under normal production conditions, softened water is passed through into forming furnace and produces water steam medium, it is pollution-free, do not remain, there is safety and environmental protection The characteristics of, the equipment in forming furnace under high temperature and sheet product will not be impacted.It is free in the SiC plates of forming furnace both sides Oxygen in silicon and air, in forming furnace under the ambiance full of water vapour, quickly produce high-temperature chemical reaction：Si+O2 → SiO2, the SiO2 diaphragms of densification are formed on carborundum plate surface, realize that the quick of SiC plate surface SiO2 oxide-films thickens, So, the performance of carbofrax material is on the one hand enhanced, its actual life is effectively extended, on the other hand solves There is foamed phenomenon at high temperature in SiC material, the problem of causing base plate glass surface contamination, and glass product has been effectively ensured Quality requirements.

The concrete technical scheme of the present invention is as follows：

Such as accompanying drawing 1, in the production process of base plate glass, shaping area in-furnace temperature typically at 800 DEG C~1100 DEG C, passes through The patchhole of forming furnace both ends furnace wall is insert molded the part in stove in forming furnace interpolation oral siphon, water pipe, at interval of a spacing The aperture of funnel type is left, is easy to in-pipe flow constantly to ooze, by controlling the pressure of water, flow in water pipe, with reference to water pipe The size of outer wall bore size, the size of the amount that water droplet flows out in water pipe can be controlled.Forming furnace in being produced due to base plate glass Interior temperature is significantly larger than 100 DEG C of the vapourizing temperature point of water, and the water droplet flowed out in water pipe instant vaporization under furnace high-temperature becomes Water vapour.During if operation initial stage is controlled adjustment to the water droplet frequency of water pipe 1, size, the water of water pipe 2 is dripping During have little time to vaporize, on the invar material shutter 4 that can also drop below carborundum plate 2, water droplet spread out below product increase Greatly, it is exposed without dropping to forming furnace bottom or annealing furnace both sides furnace wall in the meeting instant vaporization of the surface of shutter 4 of high temperature The damage of equipment is caused on heater strip.Oxygen in the material of carborundum plate 2 in free silica and air, water is full of in forming furnace It is quick to produce high-temperature chemical reaction Si+O under the ambiance of steam₂→ SiO2, the SiO of densification is formed on the surface of carborundum plate 2₂ Diaphragm, and realize SiO₂The quick of diaphragm thickens.

Compared with prior art, the present invention has technique effect beneficial below：

The method that a kind of SiC plate surfaces oxide layer involved in the present invention quickly thickens, can be in base plate glass production It is actually needed according to scene and carries out operation at any time, has that device structure is simple, operational method is safe and reliable, simple and easy to do, operation The characteristics of property is strong.Water vapour safety and environmental protection caused by water flowing in forming furnace in production, will not be to setting in forming furnace under high temperature Standby and sheet product pollutes.Under water vapour atmosphere, carborundum plate surface quickly forms certain thickness densification in stove SiO₂Diaphragm, can effectively extend the service life of carborundum plate material, and it is existing that SiC material can be prevented to occur foaming at high temperature As the pollution to base plate glass surface, the quality taste of product being effectively ensured.

Brief description of the drawings

Fig. 1 is insert molded in stove for softening water pipe, water pipe, glass plate, carborundum plate position relationship schematic top plan view.

Fig. 2 is insert molded in stove for softening water pipe, and water pipe, glass plate, unilateral carborundum plate, shutter position relationship are three-dimensional Schematic diagram.

Wherein：1-water pipe, 2-carborundum plate, 3-glass plate, 4-shutter.

Embodiment

The present invention is described in further detail below in conjunction with the accompanying drawings：

Such as accompanying drawing 1, accompanying drawing 2, in base plate glass production process, in forming furnace interpolation oral siphon 1, water pipe 1 passes through shaping The patchhole of stove both ends furnace wall is fixed.By controlling the pressure of softened water, flow in water pipe 1, with reference to the outer wall perforate of water pipe 1 The size of size, the frequency and size that the water droplet of water pipe 1 can be controlled to flow out.The water droplet of outflow is 800 DEG C in forming furnace in water pipe 1 Instant vaporization becomes water vapour at a high temperature of~1100 DEG C.Tune is controlled to the water droplet frequency of water pipe 1, size at operation initial stage When whole, if the water of water pipe 1 has little time to vaporize during dripping, it will the invar material to drop below carborundum plate 2 hides On baffle plate 4, water droplet is spread out accumulates increase below, instant vaporization is understood on the surface of shutter 4 of high temperature, without dropping under forming furnace The damage of equipment is caused on the exposed heater strip in portion or annealing furnace both sides furnace wall.

The oxygen in free silica and air in forming furnace both sides carborundum plate 2, the ring of water vapour is full of in forming furnace It is quick to produce high-temperature chemical reaction Si+O under the atmosphere of border₂→SiO₂, fine and close SiO is formed on the surface of carborundum plate 2₂Diaphragm, Realize carborundum plate surface SiO₂The quick of diaphragm thickens, and plays the service life for effectively extending carborundum plate 2 and prevents carbon There is the effect that high temperature foamed phenomenon pollutes to glass plate 3 in SiClx plate 2.

Claims

1. a kind of method that SiC plate surfaces oxide layer quickly thickens, it is characterised in that at a temperature of base plate glass normally produces, Dripped by softening water pipe into forming furnace, water vapour atmosphere is produced in stove, accelerate SiC plate surfaces SiO₂Oxide layer formed and Thicken.

2. the method that SiC plate surfaces oxide layer according to claim 1 quickly thickens, it is characterised in that pipe outer wall is inserted Entering furnace interior separately has a funnel type aperture, and the water in water pipe forms water droplet when being flowed out through aperture.

3. the method that SiC plate surfaces oxide layer according to claim 1 quickly thickens, it is characterised in that water in forming furnace The concentration of steam, depending on pipe outer wall perforate density and perforate size, and can be by adjusting pressure and the flow that water pipe is intake It is adjusted control.