TWI573176B - Substrate processing apparatus, substrate processing method, and recording medium for substrate processing - Google Patents

Description

Substrate processing apparatus, substrate processing method, and memory medium for substrate processing

The present invention relates to a substrate processing apparatus, a substrate processing method, and a recording medium for substrate processing.

The semiconductor process includes, for example, a step of forming a concavo-convex pattern such as a photoresist pattern on a substrate. In recent years, with the high density of semiconductors, the fineness of the concavo-convex pattern is also required. With the miniaturization, the aspect ratio (ratio of the height with respect to the width) of the uneven pattern becomes large, so that the collapse of the uneven pattern is likely to occur. Further, in order to achieve further miniaturization of the concavo-convex pattern, it is important to suppress collapse of the concavo-convex pattern. As a technique for preventing collapse of a pattern having a high aspect ratio, for example, in the pattern forming method disclosed in Patent Document 1, after the uneven pattern is formed, the concave portion of the concave-convex pattern is completely filled with a polymer. [Practical Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-19161

[Problems to be solved by the present invention]

However, according to the above-described pattern forming method, it is still impossible to sufficiently suppress the collapse of the uneven pattern. An object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a recording medium for substrate processing which can sufficiently suppress collapse of a concavo-convex pattern. [Technical means to solve the problem]

The substrate processing apparatus of the present invention includes: a rotation holding unit that holds and rotates the substrate; a processing liquid supply unit that supplies a processing liquid for forming a concave-convex pattern to the surface of the substrate; a rinse liquid supply unit that supplies the rinse liquid; and a filling liquid The supply unit supplies the filling liquid of the aqueous solution of the filler; the pattern forming control unit controls the rotation holding unit and the processing liquid supply unit to rotate the substrate and supply the processing liquid to the surface of the substrate, and then controls the rotation holding unit and the rinse liquid supply. The portion rotates the substrate and supplies the rinse liquid to the surface of the substrate, whereby a concave-convex pattern is formed on the surface of the substrate, and the filling control unit controls the rotation holding portion and the filling liquid supply portion to rotate the substrate and supply the filling liquid to the concave-convex pattern. After replacing the rinsing liquid with the filling liquid, the rotation holding portion is controlled to rotate the substrate, and the filling liquid on the concave-convex pattern is dried, whereby the filling portion having a lower convex portion of the concave-convex pattern is formed in the concave portion of the concave-convex pattern.

According to the substrate processing apparatus, the processing liquid and the rinsing liquid are sequentially supplied to the surface of the rotating substrate. The component obtained by dissolving the liquid to be treated is washed away with the treatment liquid together with the treatment liquid to form a concave-convex pattern. Next, a filling liquid is supplied to the uneven pattern of the rotating substrate, and the rinse liquid is replaced with a filling liquid. Thereafter, the filling liquid is dried in accordance with the rotation of the substrate, and a filling portion having a lower convex portion is formed in the concave portion. The filling portion functions as a support portion that resists collapse of the concave-convex pattern. Therefore, even if the surface tension due to the drying of the filling liquid acts on the uneven pattern, the collapse of the uneven pattern is suppressed. Further, by making the height of the filling portion lower than the convex portion, it is more difficult to collapse the concave-convex pattern than the filling portion having a higher convex portion. Therefore, collapse of the uneven pattern can be sufficiently suppressed.

Further, the inventors of the present invention have inferred that the height of the filling portion is lower than that of the convex portion to increase the difficulty of collapse of the concave-convex pattern. In other words, the filling portion having a lower convex portion is formed in the concave portion, and the concentration of the filling liquid can be reduced as compared with the case where the filling portion having a higher convex portion is formed in the concave portion. Thereby, the viscosity of the filling liquid is lowered, so that the rinsing liquid is more reliably replaced with the filling liquid. Therefore, the filling portion spreads to the finer portion to stably support the concave-convex pattern.

The filling control unit may also control the rotation holding unit and the filling liquid supply unit, and form a filling portion having a height of 20 to 50% with respect to the height of the convex portion in the concave portion. In this case, the collapse of the concavo-convex pattern can be further suppressed.

The filling control unit may control the rotation holding unit and the filling liquid supply unit so that the increase rate of the width of the convex portion accompanying the formation of the filling portion is less than 30%. In this case, the collapse of the concavo-convex pattern can be further suppressed.

The filling control unit may also control the rotation holding unit to reverse the rotation direction of the substrate in a state where the filling liquid exists on the uneven pattern. In this case, the filling portion spreads over the finer portion to more stably support the concave-convex pattern. Therefore, the collapse of the uneven pattern can be further suppressed.

Further, the heat treatment unit for heating the substrate may be further provided; the filling control unit controls the heat treatment unit to heat the substrate when the filling liquid is dried. In this case, since the formation of the filling portion is promoted, the collapse of the uneven pattern can be further suppressed.

The pattern forming control unit may control the rinse liquid supply unit to supply the aqueous solution of the surfactant as the rinse liquid after controlling the rinse liquid supply unit to supply water as the rinse liquid. In this case, when the filling portion is formed, the filling portion spreads over the finer portion, so that the concave-convex pattern is more stably supported. Therefore, the collapse of the uneven pattern can be further suppressed.

Further, the back surface rinse liquid supply unit may be configured to supply the back surface rinse liquid to the edge portion of the back surface of the substrate, and the back surface rinse control unit to control the back surface rinse liquid supply unit to form the back surface of the substrate during or after the formation of the filling portion. The edge portion is supplied with a back rinse liquid. In this case, adhesion of the filler to the back surface of the substrate can be prevented.

The substrate processing method of the present invention includes the steps of: rotating a substrate and supplying a processing liquid to a surface of the substrate, rotating the substrate, and supplying a rinse liquid to the surface of the substrate, thereby forming a concave-convex pattern on the surface of the substrate; An aqueous solution for supplying a filler, that is, a filling liquid, is used to replace the rinsing liquid with a filling liquid, and then rotating the substrate to dry the filling liquid on the concave-convex pattern, thereby forming a filling portion having a lower convex portion of the concave-convex pattern in the concave-convex pattern. The recess.

According to the substrate processing method, the processing liquid and the rinsing liquid are sequentially supplied to the surface of the rotating substrate. The component obtained by dissolving the liquid to be treated is washed away with the treatment liquid together with the treatment liquid to form a concave-convex pattern. Next, a filling liquid is supplied to the uneven pattern of the rotating substrate, and the rinse liquid is replaced with a filling liquid. Thereafter, the filling liquid is dried in accordance with the rotation of the substrate, and a filling portion having a lower convex portion is formed in the concave portion. The filling portion functions as a support portion that resists collapse of the concave-convex pattern. Therefore, even if the surface tension due to the drying of the filling liquid acts on the uneven pattern, the collapse of the uneven pattern is suppressed. Further, by making the height of the filling portion lower than the convex portion, it is more difficult to collapse the concave-convex pattern than the filling portion having a higher convex portion. Therefore, collapse of the uneven pattern can be sufficiently suppressed.

Further, the inventors of the present invention have inferred that the height of the filling portion is lower than that of the convex portion to increase the difficulty of collapse of the concave-convex pattern. In other words, the filling portion having a lower convex portion is formed in the concave portion, and the concentration of the filling liquid can be reduced as compared with the case where the filling portion having a higher convex portion is formed in the concave portion. Thereby, the viscosity of the filling liquid is lowered, so that the rinsing liquid is more reliably replaced with the filling liquid. Therefore, the filling portion spreads to the finer portion to stably support the concave-convex pattern.

A filling portion having a height of 20 to 50% with respect to the height of the convex portion may be formed in the concave portion. In this case, the collapse of the concavo-convex pattern can be further suppressed.

The increase rate of the width of the convex portion accompanying the formation of the filling portion may be less than 30%. In this case, the collapse of the concavo-convex pattern can be further suppressed.

The rotation direction of the substrate may be reversed in a state where the filling liquid exists on the uneven pattern. In this case, the filling portion spreads over the finer portion to more stably support the concave-convex pattern. Therefore, the collapse of the uneven pattern can be further suppressed.

The substrate may also be heated while the filling liquid is being dried. In this case, since the formation of the filling portion is promoted, the collapse of the uneven pattern can be further suppressed.

After the water is supplied as the rinsing liquid, the aqueous solution of the surfactant may be supplied as a rinsing liquid. In this case, when the filling portion is formed, the filling portion spreads over the finer portion, so that the concave-convex pattern is more stably supported. Therefore, the collapse of the uneven pattern can be further suppressed.

The backside rinse liquid may be supplied to the edge portion of the back surface of the substrate during or after the formation of the filling portion. In this case, adhesion of the filler to the back surface of the substrate can be prevented.

The recording medium for substrate processing of the present invention is a computer-readable memory medium, and a program for causing the substrate processing apparatus to execute the substrate processing method is recorded. [Effect of the present invention]

According to the invention, the collapse of the concavo-convex pattern can be sufficiently suppressed.

[Best Mode for Carrying Out the Invention]

Hereinafter, the best mode for carrying out the invention will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and the repeated description is omitted.

As shown in FIG. 1, the coating/development apparatus 1 performs a process of applying a photoresist to the surface of the wafer (substrate) to form a photoresist film before the exposure processing by the exposure apparatus E1, and performing the exposure apparatus E1. After the exposure treatment, development processing of the photoresist film is performed. As shown in FIGS. 1 to 3, the coating/developing apparatus 1 includes a transport block S1, a processing block S2 adjacent to the transport block S1, an interface block S3 adjacent to the processing block S2, and a control unit 27 ( Refer to Figure 4). Hereinafter, the "front, rear, left, and right" in the description of the coating and developing device 1 means that the interface block S3 side is the front side and the carrier block S1 side is the rear side.

The carrier block S1 has a carrier station 12 and a carry-in/out unit 13. The carrier 12 supports a plurality of carriers 11. The carrier 11 stores the plurality of wafers W in a sealed state, and has an opening/closing jaw (not shown) for allowing the wafer W to enter and exit on one side surface 11a side. The carrier 11 has its side surface 11a facing the side of the loading/unloading portion 13, and is detachably provided on the carrier 12.

The loading/unloading unit 13 has a plurality of opening/closing ports 13a corresponding to the plurality of carriers 11 on the carrier 12, respectively. By opening and closing the side surface 11a and opening and closing the opening 13a at the same time, the inside of the carrier 11 is communicated with the inside of the loading/unloading unit 13. The transfer arm A1 is built in the carry-in unit 13 . The transfer arm A1 picks up the wafer W from the carrier 11 and transports it to the processing block S2, and receives the wafer W from the processing block S2 and returns to the carrier 11.

The processing block S2 has a lower anti-reflection film formation (BCT) block 14, a photoresist film formation (COT) block 15, an upper anti-reflection film formation (TCT) block 16, and a development processing (DEV) block 17 . These blocks are stacked in the order of the DEV block 17, the BCT block 14, the COT block 15, and the TCT block 16 from the floor surface side.

The BCT block 14 is internally provided with a coating unit (not shown), a heating unit, a cooling unit (not shown), and a transfer arm A2 for transporting the wafer W to the units. The coating unit applies a chemical solution for forming an anti-reflection film on the surface of the wafer W. The heating unit is heated, for example, by heating the wafer W with a hot plate to heat the chemical solution, and cooling the heated wafer W with a cooling plate, thereby performing heat treatment for curing the chemical solution or the like.

The COT block 15 is internally provided with a coating unit (not shown), a heating unit, a cooling unit (not shown), and a transfer arm A3 for transporting the wafer W to the units. The coating unit applies a chemical solution (photoresist) for forming a photoresist film to the lower reflection preventing film. The heating unit is heated, for example, by heating the wafer W with a hot plate to heat the photoresist, and cooling the heated wafer W with a cooling plate, thereby performing heat treatment for curing the photoresist or the like. The photoresist may be a positive photoresist or a negative photoresist.

The TCT block 16 is internally provided with a coating unit (not shown), a heating unit, a cooling unit (not shown), and a transfer arm A4 for transporting the wafer W to the units. The coating unit applies a chemical solution for forming an anti-reflection film on the photoresist film. The heating unit is heated, for example, by heating the wafer W with a hot plate to heat the chemical solution, and cooling the heated wafer W with a cooling plate, thereby performing heat treatment for curing the chemical solution or the like.

As shown in FIG. 3, the DEV block 17 has a plurality of development processing units (substrate processing apparatuses) U1, a plurality of heating and cooling units (heat treatment units) U2, and a transfer arm A5 for transporting the wafers W to the units. And directly transporting the arm A6 of the wafer W before and after the processing block S2 without passing through the units.

The development processing unit U1 performs development processing of the exposed photoresist film as will be described later. The heating unit U2 is heated, for example, by heating the wafer W with a hot plate to heat the photoresist film, and cooling the heated wafer W with a cooling plate. The heating unit U2 is heated and subjected to heat treatment such as post-exposure baking (PEB) and post-baking (PB). PEB is a treatment for heating the photoresist film before development processing. PB is a treatment for heating the photoresist film after the development treatment.

A shelving unit U10 is disposed on the rear side of the processing block S2. The scaffolding unit U10 is provided so as to straddle the TCT block 16 from the floor surface, and is divided into a plurality of cells C30 to C38 arranged in the vertical direction. A lifting arm A7 is provided near the scaffolding unit U10. The lift arm A7 carries the wafer W between the units C30 to C38. A shelving unit U11 is disposed on the front side of the processing block S2. The scaffolding unit U11 is provided so as to straddle from the floor surface to the upper portion of the DEV block 17, and is divided into a plurality of cells C40 to C42 arranged in the vertical direction.

The interface block S3 is connected to the exposure device E1. The interface block S3 has a transfer arm A8 built therein. The transfer arm A8 moves the wafer W from the scaffolding unit U11 of the processing block S2 to the exposure device E1, and receives the wafer W from the exposure device E1 and returns to the scaffolding unit U11.

In the coating/development apparatus 1, first, the carrier 11 is placed in the carrier station 12. At this time, one side surface 11a of the carrier 11 faces the opening/closing port 13a of the carry-in/out part 13. Next, the opening/closing jaws of the carrier 11 are opened together with the opening/closing cassette 13a of the loading/unloading unit 13, and the wafer W1 is transferred by the transfer arm A1, and the wafer W in the carrier 11 is taken out and transported to the booth of the processing block S2 in order. Any one of the units U10.

The wafer W transported to any one of the scaffolding units U10 by the transfer arm A1 is sequentially transported to the unit C33 corresponding to the BCT block 14 by the lift arm A7. The wafer W to be transported to the cell C33 is transported to each cell in the BCT block 14 by the transport arm A2, and a lower layer anti-reflection film is formed on the surface of the wafer W.

The wafer W on which the lower layer anti-reflection film is formed is transported by the transport arm A2 to the unit C34 above the unit C33. The wafer W to be transported to the cell C34 is transported to the cell C35 corresponding to the COT block 15 by the lift arm A7. The wafer W to be transported to the cell C35 is transported to each cell in the COT block 15 by the transfer arm A3, and a photoresist film is formed on the lower layer anti-reflection film of the wafer W.

The wafer W on which the photoresist film is formed is transported by the transport arm A3 to the unit C36 above the unit C35. The wafer W to be transported to the cell C36 is transported to the cell C37 corresponding to the TCT block 16 by the lift arm A7. The wafer W to be transported to the cell C37 is transported to each cell in the TCT block 16 by the transfer arm A4, and an upper anti-reflection film is formed on the photoresist film of the wafer W.

The wafer W on which the upper anti-reflection film is formed is transported by the transport arm A4 to the unit C38 above the unit C37. The wafer W to be transported to the unit C38 is transported by the lift arm A7 to the unit C32 corresponding to the direct transport arm A6, and is transported to the unit C42 of the scaffolding unit U11 by the direct transport arm A6. The wafer W to be transported to the cell C42 is transferred to the exposure device E1 via the transfer arm A8 of the interface block S3, and the exposure process of the photoresist film is performed in the exposure device E1. The wafer W after the exposure processing is transported to the cells C40 and C41 below the cell C42 by the transfer arm A8.

The wafer W to be transported to the cells C40 and C41 is transported to the respective cells in the DEV block 17 by the transport arm A5, and development processing is performed. Thereby, a photoresist pattern is formed on the surface of the wafer W. The wafer W on which the photoresist pattern is formed is transported by the transport arm A5 to the cells C30 and C31 corresponding to the DEV block 17 in the scaffolding unit U10. The wafer W to be transported to the cells C30 and C31 is transported to the unit that the transfer arm A1 can contact by the lift arm A7, and is returned to the carrier 11 by the transfer arm A1.

The configuration of the coating/developing device 1 is only an example. The coating/developing device may be a device including a liquid processing unit such as a coating unit or a development processing unit, a pretreatment unit, a post-processing unit, and a conveying device such as a heating/cooling unit, and the number and type of each unit may be Appropriate changes such as configuration.

Next, the development processing unit (substrate processing apparatus) U1 will be described in more detail. As shown in FIG. 4, the development processing unit U1 includes a rotation holding unit 20, a lifting device 22, a developer supply unit (processing liquid supply unit) 23, a rinse liquid supply unit 24, a filling liquid supply unit 25, and a back rinse liquid supply unit. 26. And a control unit 27.

The rotation holding portion 20 includes a main body portion 20a having a built-in power source such as an electric motor, a rotation shaft 20b protruding vertically upward from the main body portion 20a, and a suction cup 20c provided at an end portion before the rotation shaft 20b. The main body portion 20a rotates the rotating shaft 20b and the suction cup 20c by a power source. The chuck 20c supports the center portion of the wafer W which is disposed slightly horizontally, and is held by, for example, adsorption. That is, the rotation holding portion 20 holds the wafer W horizontally and rotates around the vertical axis.

The lifting device 22 is provided adjacent to the rotation holding portion 20, and the rotation holding portion 20 is moved up and down. Thereby, the chuck 20c can be moved up and down between the transfer height at which the wafer W is transferred and the development height at which the development process is performed.

Around the rotation holding portion 20, a cup 30 is provided. The cup 30 is a container that supports a liquid (described later) such as a developer that has fallen from the wafer W and is dropped to the outside. The cup body 30 has an annular bottom plate 31 that surrounds the rotation holding portion 20, a cylindrical outer wall 32 that protrudes vertically upward from the outer edge of the bottom plate 31, and a cylindrical inner wall 33 that is inside the bottom plate 31. The edge protrudes vertically upward. The entire portion of the outer wall 32 is located outside the outer edge of the wafer W held by the chuck 20c. The upper end 32a of the outer wall 32 is located above the wafer W held by the chuck 20c of the above development height. On the side of the upper end 32a side of the outer wall 32, an inclined wall portion 32b which is inclined toward the inner side is formed. The entire portion of the inner wall 33 is located on the inner side of the outer edge of the wafer W held by the chuck 20c. The upper end 33a of the inner wall 33 is located below the wafer W held by the chuck 20c of the above-described development height.

Between the inner wall 33 and the outer wall 32, a partition wall 34 that protrudes vertically upward from the top surface of the bottom plate 31 so as to surround the inner wall 33 is provided. In the bottom plate 31, a liquid discharge hole 31a is formed in a portion between the outer wall 32 and the partition wall 34, and the liquid discharge hole 31a is connected to the liquid discharge pipe 35. In the bottom plate 31, a gas discharge hole 31b is formed in a portion between the partition wall 34 and the inner wall 33, and the gas discharge hole 31b is connected to the exhaust pipe 36.

Above the inner wall 33, an umbrella portion 37 is provided so as to protrude outward from the partition wall 34. The liquid that has fallen from the wafer W to the outside is guided between the outer wall 32 and the partition wall 34, and is discharged from the liquid discharge hole 31a. A gas or the like generated by the liquid enters between the partition wall 34 and the inner wall 33, and this gas is discharged from the gas discharge hole 31b.

The upper portion of the space surrounded by the inner wall 33 is closed by a partition plate 38. The body portion 20a of the rotation holding portion 20 is located below the partition plate 38, the suction cup 20c is positioned above the partition plate 38, and the rotating shaft 20b penetrates the partition plate 38.

As shown in FIG. 4 and FIG. 5, the developer supply unit 23 includes a developer supply source 23a, a developer nozzle 23c, and a movable body 23d, and supplies a developer (treatment liquid) to the surface Wa of the wafer W. The supply source 23a has a storage container for a developer, a pump, a valve, and the like. The developer nozzle 23c is connected to the supply source 23a via the supply tube 23b, and ejects the developer supplied from the supply source 23a. The moving body 23d is connected to the developer nozzle 23c by the arm portion 23e. The moving body 23d is moved along the guide rail 40 horizontally provided outside the outer wall 32, whereby the developer liquid nozzle 23c is transferred in the horizontal direction. The developer nozzle 23c is located above the center of the chuck 20c when viewed from the extending direction of the guide rail 40 (right or left in the drawing). The ejection hole h1 of the developer nozzle 23c is opened downward. The ejection hole h1 has a slit shape along the extending direction of the guide rail 40.

When the developer is supplied to the surface Wa, the developer nozzle 23c is transferred by the movable body 23d, and is placed above the wafer W held by the chuck 20c. Then, the developer supplied from the supply source 23a is ejected downward from the developer nozzle 23c, and is supplied to the surface Wa.

The rinse liquid supply unit 24 includes a supply source 24a for the rinse liquid, a rinse liquid nozzle 24c, and a movable body 24d, and supplies the rinse liquid to the surface Wa of the wafer W. The rinsing liquid is, for example, pure water or DIW (Deionized Water). The supply source 24a has a storage container for the rinsing liquid, a pump, a valve, and the like. The rinse liquid nozzle 24c is connected to the supply source 24a via the supply pipe 24b, and discharges the rinse liquid supplied from the supply source 24a. The moving body 24d is connected to the rinse liquid nozzle 24c by the arm portion 24e. The moving body 24d is moved in the horizontal direction by moving along the guide rail 40. The rinsing liquid nozzle 24c supported by the arm portion 24e is positioned above the center of the suction cup 20c when viewed from the extending direction of the guide rail 40 (right or left in the drawing). The ejection hole h2 of the rinse liquid nozzle 24c is opened downward.

When the rinse liquid is supplied to the surface Wa, the rinse liquid nozzle 24c is transferred by the movable body 24d, and is placed above the wafer W held by the suction cup 20c. Then, the rinse liquid supplied from the supply source 24a is discharged downward from the rinse liquid nozzle 24c, and is supplied to the surface Wa.

The filling liquid supply unit 25 includes a supply source 25a for the filling liquid, a filling liquid nozzle 25c, and a moving body 25d, and supplies a filling liquid to the surface Wa of the wafer W. The filling liquid is, for example, an aqueous solution of a filler such as a water-soluble polymer. The supply source 25a has a storage container for a filling liquid, a pump, a valve, and the like. The filling liquid nozzle 25c is connected to the supply source 25a via the supply pipe 25b, and discharges the filling liquid supplied from the supply source 25a. The moving body 25d is connected to the filling liquid nozzle 25c by the arm portion 25e. The moving body 25d is moved in the horizontal direction by moving along the guide rail 40. When viewed from the extending direction of the guide rail 40 (right or left in the drawing), the filling liquid nozzle 25c supported by the arm portion 25e is positioned above the center of the suction cup 20c. The ejection hole h3 of the filling liquid nozzle 25c is opened downward.

When the filling liquid is supplied to the surface Wa, the filling liquid nozzle 25c is transferred by the moving body 25d, and is placed above the wafer W held by the suction cup 20c. Then, the filling liquid supplied from the supply source 25a is discharged downward from the filling liquid nozzle 25c, and is supplied to the surface Wa.

Further, examples of the water-soluble polymer include a homopolymer or a multicomponent copolymer of a vinyl monomer containing a hydrophilic group, or a polycondensate having a hydrophilic group. Specific examples of such resins include acrylic acid, methacrylic acid, vinyl alcohol, vinyl pyrrolidone, acrylate, methacrylate, polyvinyl alcohol (including partially saponified), polyacrylic acid, polymethacrylic acid, Polyvinyl methyl ether, polyvinyl pyrrolidone, polyethylene glycol, polyvinyl acetal (including partial acetal), polyethyleneimine, polyethylene oxide, styrene-maleic anhydride copolymer, poly A vinylamine, a polyacrylamine, an oxazoline-containing water-soluble resin, a water-soluble melamine resin, a water-soluble urea resin, an alkyd resin or a sulfonamide, and the like are further exemplified. These may be used alone or in combination of two or more. The concentration of the water-soluble polymer in the filling liquid is preferably less than 10%, more preferably 1% or more and less than 10%, particularly preferably 3% or more and 5% or less.

In order to improve the applicability to the surface Wa of the wafer W, an active agent may be added to the filling liquid. The active agent may, for example, be a nonionic active agent. Specific examples of the nonionic active agent include sorbitan monooleate, glycerol α-monooleate, polyethylene glycol sorbitan fatty acid ester, and polyethylene glycol linear alkane. Ether, polyethylene glycol phenyl ether linear alkyl addition type, branched alkyl addition type, acetylene glycol, anionic sodium laurate, sodium stearate, sodium oleate, sodium lauryl sulfate or Sodium dodecylbenzene sulfonate and the like. These may be used alone or in combination of two or more. The concentration of the active agent in the filling liquid is preferably from 20 to 100 ppm.

The back surface rinse liquid supply unit 26 includes a back side rinse liquid supply source 26a and a back surface rinse liquid nozzle 26c, and supplies a back surface rinse liquid to the edge portion of the back surface Wb of the wafer W. The backside rinse liquid is, for example, pure water, DIW or a water-soluble organic solvent. As the water-soluble organic solvent, for example, isopropyl alcohol is exemplified. The supply source 26a has a storage container for a back flushing liquid, a pump, a valve, and the like. The back surface rinse liquid nozzle 26c is connected to the supply source 26a via the supply tube 26b, and discharges the back surface rinse liquid supplied from the supply source 26a. The back rinse liquid nozzle 26c is disposed on the partition plate 38, and the supply pipe 26b is piped by the partition plate 38. The backside rinse liquid nozzle 26c is located below the edge portion of the wafer W held by the chuck 20c. The ejection hole h4 of the back surface rinse liquid nozzle 26c is opened obliquely upward toward the outer side of the wafer W.

The control unit 27 is a control computer, and includes a display unit (not shown) that displays a setting screen for developing processing conditions, an input unit (not shown) that inputs development processing conditions, and a reading unit (not shown). , a computer-readable memory media reader. A program for performing the development processing method (substrate processing method) of the present embodiment in the development processing unit U1 is recorded on the recording medium. Examples of the recording medium include a hard disk, a compact disc, a flash memory, a flexible magnetic disk, or a memory card. The control unit 27 controls the rotation holding unit 20, the lifting device 22, the developing solution supply unit 23, the rinse liquid supply unit 24, and the filling liquid in accordance with the development processing conditions input to the input unit and the program read by the reading unit. The supply unit 25 and the back surface rinse liquid supply unit 26 perform development processing. Hereinafter, the control sequence of the control unit 27 will be described.

First, the control unit 27 waits in a state where the lifting device 22 is controlled to raise the suction cup 20c to the above-described transmission height. In this state, the wafer W is carried into the development processing unit U1 by the above-described transfer arm A5. A photoresist film R is formed on the wafer W, and an exposure process is performed on the photoresist film R by the exposure device E1. The wafer W is horizontally disposed on the chuck 20c in a state where the photoresist film R is above. Once the wafer W is configured, the chuck 20c is controlled to hold the wafer W, and the lifting device 22 is controlled to lower the chuck 20c to the above-described developing height.

Next, as shown in FIG. 6(a), the rotation holding portion 20 is controlled to rotate the wafer W. At the same time, the developer supply unit 23 is controlled such that the developer nozzle 23c moves toward the center from the outer circumference of the wafer W, and the developer L1 is ejected from the developer nozzle 23c. Thereby, the developer L1 is supplied to the entire surface Wa of the wafer W along the spiral line, and as shown in FIG. 6(b), the liquid beach of the developer L1 is formed on the surface Wa.

Then, the developer supply unit 23 is controlled to retract the developer nozzle 23c from the wafer W, and the rinse liquid supply unit 24 is controlled to move the rinse liquid nozzle 24c upward of the center of the wafer W. In this state, as shown in FIG. 7(a), the rotation holding unit 20 is controlled to rotate the wafer W at the rotation speed ω1. At the same time, the rinse liquid supply unit 24 is controlled to discharge the rinse liquid L2 from the rinse liquid nozzle 24c. Thereby, the rinse liquid L2 is supplied to the surface Wa of the wafer W. The component of the photoresist film R in which the developer L1 is dissolved is washed away with the developer L1 together with the rinse liquid L2, and the photoresist pattern P is formed as shown in Fig. 7(b). The photoresist pattern P is a concave-convex pattern having a convex portion Ra and a concave portion Rb. Further, the rotational speed ω1 is, for example, 500 to 1000 rpm. It is also possible to make the rotational speed ω1 larger (for example, 1000 rpm to 15000 rpm). The supply time of the rinse liquid L2 is, for example, 15 to 30 seconds. This supply time can also be made larger (for example, 30 to 600 seconds).

In this manner, the control unit 27 controls the rotation holding unit 20 and the developer supply unit 23 to rotate the wafer W and supply the developer to the surface Wa. Thereafter, the rotation holding unit 20 and the rinse liquid supply unit 24 are controlled to rotate the wafer W and supply the rinse liquid to the surface Wa, whereby a concave-convex pattern is formed on the surface Wa. That is, the control unit 27 operates as a pattern forming control unit.

Then, the rinse liquid supply unit 24 is controlled to retract the rinse liquid nozzle 24c from the wafer W, and the filling liquid supply unit 25 is controlled to move the filling liquid nozzle 25c upward of the center of the wafer W. In this state, as shown in FIG. 8(a), the rotation holding unit 20 is controlled to rotate the wafer W at the rotation speed ω2. At the same time, the filling liquid supply unit 25 is controlled, and the filling liquid L3 is ejected from the filling liquid nozzle 25c. Thereby, the filling liquid L3 is supplied to the photoresist pattern P. In the central portion of the resist pattern P, the rinse liquid L2 is replaced with the filling liquid L3 to form a liquid pool of the filling liquid L3. Further, the rotational speed ω2 is, for example, 100 rpm.

Next, as shown in FIG. 8(b), the rotation holding unit 20 is controlled to rotate the wafer W at a rotation speed ω3 which is larger than the rotation speed ω2, and the rinse liquid L2 is replaced with the filling liquid L3 over the entire photoresist pattern P. Further, the rotational speed ω3 is, for example, 1000 to 2000 rpm.

Then, as shown in FIG. 8(c), the rotation holding unit 20 is controlled to rotate the wafer W at the rotation speed ω4. At the same time, the back rinse liquid supply unit 26 is controlled to discharge the back rinse liquid L4 from the back rinse liquid nozzle 26c. Thereby, the back surface rinse liquid is supplied to the edge part of the back surface Wb of the wafer W. That is, the control unit 27 operates as a back flush control unit. The adhesion of the filler to the back surface Wb of the wafer W can be prevented by the supply of the backside rinsing liquid. Further, the rotational speed ω4 is, for example, 1500 to 2000 rpm.

Next, as shown in FIG. 8(d), the rotation holding unit 20 is controlled to rotate the wafer W at the rotation speed ω5 to dry the filling liquid on the resist pattern P. Thereby, the entire resist pattern P is covered with the film F of the filler, and the filling portion Fa having a lower convex portion Ra is formed in the concave portion Rb. Further, the rotational speed ω5 is, for example, 1500 to 2000 rpm.

In other words, the control unit 27 controls the rotation holding unit 20 and the filling liquid supply unit 25 to rotate the wafer W and supply the filling liquid L3 to the resist pattern P, and replaces the rinse liquid L2 with the filling liquid L3. Then, the rotation holding unit 20 is controlled to rotate the wafer W to dry the filling liquid L3 on the resist pattern P, whereby the filling portion Fa having a lower convex portion Ra is formed in the concave portion Rb. That is, the control unit 27 operates as a filling control unit.

The development process is ended as described above. When the processing unit U1 is replaced with the filling liquid L3, the filling liquid L3 is dried by the rotation of the wafer W, and the filling portion Fa having a lower convex portion Ra is formed in the concave portion. Rb. The filling portion Fa operates as a support portion that resists collapse of the photoresist pattern P. Therefore, even if the surface tension of the drying accompanying the filling liquid L3 acts on the photoresist pattern P, the collapse of the photoresist pattern P is suppressed. Further, by making the height of the filling portion Fa lower than the convex portion Ra, it is more difficult to collapse the photoresist pattern P than the filling portion Fa having a higher convex portion Ra. Therefore, collapse of the photoresist pattern P can be sufficiently suppressed.

Further, the inventors of the present invention have inferred that the height of the filling portion Fa is lower than the convex portion Ra to increase the difficulty of collapse of the resist pattern P. In other words, in the case where the filling portion Fa having a lower convex portion Ra is formed, the concentration of the filling agent in the filling liquid L3 can be reduced as compared with the filling portion Fa having the higher convex portion Ra. Thereby, the viscosity of the filling liquid L3 is lowered, so that the rinsing liquid L2 is more reliably replaced with the filling liquid L3. Therefore, the filling liquid L3 spreads over the finer portion to stably support the photoresist pattern P.

Further, since the height of the filling portion Fa is lower than that of the convex portion Ra, the disappearance of the photoresist pattern P in appearance is prevented, so that the appearance of the photoresist pattern P can be inspected without removing the filling portion Fa, and the etching step can be transferred to the subsequent stage. . Further, in the etching step of the subsequent stage, the filling portion Fa can be removed by etching of the wafer W. Therefore, the absence of the setting is only necessary for the purpose of removing the filling portion Fa, so that the reduction in the amount of processing can be suppressed.

The control unit 27 as the filling control unit may control the rotation holding unit 20 to reverse the rotation direction of the wafer W in a state where the filling liquid L3 is present on the resist pattern P. For example, when the wafer W is rotated at the rotation speed ω3, the rotation direction of the wafer W can be reversed in the middle. In this case, the filling portion Fa is spread over the finer portion to more stably support the photoresist pattern P. Therefore, collapse of the photoresist pattern P can be further suppressed.

The control unit 27 as the filling control unit can also control the heating/cooling unit U2 to heat the wafer W when the filling liquid L3 is dried. That is, the substrate processing apparatus including the development processing unit U1 may further include a heating unit ‧ cooling unit U2. In this case, since the formation of the filling portion Fa is promoted, the collapse of the photoresist pattern P can be further suppressed.

The control unit 27 as the pattern forming control unit can control the rinse liquid supply unit 24 to supply the aqueous solution of the surfactant as the rinse liquid L2 after controlling the rinse liquid supply unit 24 to supply the water as the rinse liquid L2. In this case, when the filling portion Fa is formed, the filling portion Fa is spread over the finer portion, so that the photoresist pattern P is more stably supported. Therefore, collapse of the photoresist pattern P can be further suppressed.

The control unit 27 of the back surface flushing control unit controls the back surface rinse liquid supply unit 26 to diffuse the filling liquid L3 at the number of revolutions ω3, and then supplies the back surface rinse liquid to the back surface Wb of the wafer W before the filling liquid L3 is dried at the number of revolutions ω5. L4. The filling liquid L3 which is returned to the back surface Wb of the wafer W is washed away by the back surface rinse liquid L4, so that adhesion of the filler to the back surface Wb of the wafer W is prevented.

Further, the backside rinse liquid L4 may be supplied at any time during or after the formation of the filling portion Fa. For example, the back surface rinse liquid L4 can be supplied when the wafer W is rotated at the rotation speed ω3 to diffuse the filling liquid L3. The back surface rinse liquid L4 may be supplied when the wafer W is rotated at the number of revolutions ω2 to supply the filling liquid L3. In this case, it is prevented that the filling liquid L3 is reflowed to the back surface Wb of the wafer W when the filling liquid L3 is diffused by the rotation speed ω3, so that adhesion of the filler to the back surface Wb of the wafer W is prevented. Alternatively, the filling liquid L3 may be dried at the number of revolutions ω5, and then supplied to the back surface rinse liquid L4 to wash away the filler adhering to the back surface Wb of the wafer W.

The preferred embodiments of the present invention have been described above, but the present invention is not limited thereto, and various modifications may be made without departing from the spirit and scope of the invention. For example, the supply of the backside rinse liquid L4 is not essential. One liquid supply mechanism may also serve as the rinse liquid supply unit 24 and the fill liquid supply unit 25. [Examples]

Next, examples and comparative examples will be described, but the present invention is not limited to the following examples and comparative examples.

[Preparation of Samples] Samples for evaluation were produced by the following Examples 1 to 7 and Comparative Examples 1 and 2.

(Example 1) After forming a lower layer anti-reflection film on the surface Wa of 20 wafers W, a photoresist film R for an ArF excimer laser was formed thereon. The thickness of the lower layer anti-reflection film was 38 nm, and the film thickness of the photoresist film was 135 nm. Next, an exposure process by an ArF excimer laser (wavelength: 193 nm) is applied to the photoresist film R of each wafer W. That the laser beam irradiation amount (Dose amount) of the maximum and minimum values are ^{15.5mJ / cm 2, 25mJ / cm} 2, so that the wafer W to each metric Dose amount 0.5mJ / cm ² changes. Further, the target pitch of the photoresist pattern P was set to 45 nm.

The development processing is performed on each of the wafers W after the exposure processing. In the development processing, the rinse liquid L2 was set to DIW, and the supply time of the rinse liquid L2 was 15 seconds. The filling liquid L3 was made into an aqueous solution of a water-soluble polymer, and the concentration of the water-soluble polymer in the filling liquid L3 (hereinafter referred to as "concentration of the filling liquid") was 5%. As the water-soluble polymer, a material containing acrylate as a main component is used. The supply time of the filling liquid L3 was 5 seconds, and the rotation speed ω2 when the filling liquid L3 was supplied was 100 rpm.

(Example 2) A sample was prepared by setting the concentration of the filling liquid to 4%, and other conditions were the same as in Example 1.

(Example 3) A sample was prepared in the same manner as in Example 1 except that the concentration of the filling liquid was 3%.

(Example 4) A sample was prepared by setting the concentration of the filling liquid to 2%, and other conditions were the same as in Example 1.

(Example 5) A sample was prepared by setting the concentration of the filling liquid to 1% in the same manner as in Example 1.

(Example 6) The wafer W was heated while the filling liquid L3 was dried. A sample was prepared in the same manner as in Example 1 except for other conditions.

(Example 7) The supply time of the rinse liquid L2 was set to 180 seconds. A sample was prepared in the same manner as in Example 1 except for other conditions.

(Comparative Example 1) The supply of the filling liquid L3 was not performed, and the rinse liquid L2 was dried after the supply of the rinse liquid L2. A sample was prepared in the same manner as in Example 1 except for other conditions.

(Comparative Example 2) After the DIW was supplied as the rinse liquid L2, the aqueous solution of the surfactant was supplied as the rinse liquid L2. The supply time of the DIW was 15 seconds, and the supply time of the aqueous solution of the surfactant was 5 seconds. A sample was prepared in the same manner as in Comparative Example 1 except for other conditions.

[Confirmation of State of Photoresist Pattern P] For Examples 1 to 5 and Comparative Examples 1 and 2, the state of the photoresist pattern P of the sample having a dose of 16 mJ/cm ² was confirmed. 9(a) to 9(g) are electron micrographs of the photoresist patterns P formed in the samples of Comparative Examples 1 and 2 and Examples 1 to 5, respectively.

In the sample of Comparative Example 1, the height H1 and the width B1 of the convex portion Ra were 108.1 nm and 43.7 nm, respectively. In the sample of Comparative Example 2, the height H2 and the width B2 of the convex portion Ra were 105.2 nm and 55.6 nm, respectively.

In the sample of Example 1, the height H3 and the width B3 of the convex portion Ra were 96.2 nm and 54.6 nm, respectively. The width B3 is about 25% larger than the width B1 in Comparative Example 1. The height H'3 of the filling portion Fa is about 50% of the height H3 of the convex portion Ra.

In the sample of Example 2, the height H4 and the width B4 of the convex portion Ra were 105.2 nm and 47.6 nm, respectively. The width B4 is about 9% larger than the width B1 in Comparative Example 1. The height H'4 of the filling portion Fa is about 25% of the height H4 of the convex portion Ra.

In the sample of Example 3, the height H5 and the width B5 of the convex portion Ra were 122.0 nm and 46.6 nm, respectively. The width B5 is about 7% larger than the width B1 in Comparative Example 1. The height H'5 of the filling portion Fa is about 20% of the height H5 of the convex portion Ra.

In the sample of Example 4, the height H6 and the width B6 of the convex portion Ra were 114.0 nm and 44.6 nm, respectively. The width B6 is about 2% larger than the width B1 in Comparative Example 1. The height H'6 of the filling portion Fa is about 10% of the height H5 of the convex portion Ra.

In the sample of Example 5, the height H7 and the width B7 of the convex portion Ra were 109.1 nm and 43.7 nm, respectively. The width B7 is the same as the width B1 in Comparative Example 1. The filling portion Fa is extremely small in height and cannot be measured.

[Evaluation of Difficulty of Collapse of Photoresist Pattern P] With respect to each of the samples of Examples 1 to 7 and Comparative Examples 1 and 2, the presence or absence of collapse of the photoresist pattern P was evaluated. The evaluation results are shown in Fig. 10. Fig. 10 shows the evaluation results of the samples of the respective examples in the row direction in ascending order of the amount of Dose. The lattice marked with hatching indicates that the collapse of the photoresist pattern P has not occurred, and the lattice not marked with a hatching indicates that the collapse of the photoresist pattern P occurs. When the amount of Dose becomes large, the width of the convex portion Ra becomes small, so that the collapse of the photoresist pattern P easily occurs. On the other hand, if the difficulty of collapse of the photoresist pattern P is increased, the range of the hatching in FIG. 10 becomes larger downward.

As shown in FIG. 10, in Comparative Example 1, the upper limit of the amount of Dose in which the collapse of the photoresist pattern P did not occur was 17.5 mJ/cm ² . In Comparative Example 2, the upper limit of the amount of Doose in which the collapse of the photoresist pattern P did not occur was 19 mJ/cm ² , which was larger than that of Comparative Example 1. That is, in Comparative Example 2, the collapse of the photoresist pattern P was more difficult than in Comparative Example 1. I believe that this is because the rinse liquid is switched from DIW to an aqueous solution of the surfactant, and the surface tension acting on the photoresist pattern P is lowered when the rinse liquid is dried.

Upper limit of Examples 1 to 7 embodiment, Dose amount of the collapse of the photoresist pattern P does not occur were ^{22mJ / cm 2, 23mJ / cm} 2, 22mJ / cm 2, 20mJ / cm 2, 20mJ / cm 2, 22.5 ^{mJ / cm 2, 23.5mJ / cm} 2, Comparative Examples are larger than 1,2. That is, in any of Examples 1 to 7, the difficulty in collapse of the photoresist pattern P was improved as compared with Comparative Examples 1 and 2. In any of the examples 1 to 7, the concentration of the filling liquid was 1% or more. Therefore, when the concentration of the filling liquid was 1% or more, it was confirmed that the collapse of the resist pattern P was difficult.

In Examples 4 and 5, the improvement in the difficulty of collapse of the photoresist pattern P was small as compared with Examples 1 to 3. It is considered that this is because the height of the filling portion Fa in the samples of Examples 4 and 5 is small. As described above, the height H'4 of the filling portion Fa in the sample of the third embodiment is about 20% of the height H4 of the convex portion Ra, so that it is preferable that the height of the filling portion Fa is higher than the height of the convex portion Ra. More than 20%. Since the concentration of the filling liquid in Example 3 was 3%, it was considered that the concentration of the filling liquid was more preferably 3% or more.

In the second embodiment, the difficulty of collapse of the photoresist pattern P is increased as compared with the third embodiment. On the other hand, in the first embodiment, the difficulty of collapse of the photoresist pattern P is lower than that of the second embodiment. The inventor of the present invention and the like have inferred the reason as follows. That is, it is inferred that the concentration of the filling liquid is higher in the first embodiment than in the second embodiment, so that it is difficult to replace the rinsing liquid with the filling liquid, and it is difficult for the filling portion to spread over the fine portion. Therefore, it is estimated that if the height of the filling portion Fa is made larger than that of the first embodiment, the difficulty in collapse of the resist pattern P is further lowered.

As described above, the height H'3 of the filling portion Fa in the sample of the first embodiment is about 50% of the height H3 of the convex portion Ra. Therefore, it is considered that the height of the filling portion Fa is higher than the height of the convex portion Ra. 50% or less. The concentration of the filling liquid in the first embodiment is 5%, so that the concentration of the filling liquid is preferably less than 10%, more preferably 5% or less. In the sample of the first embodiment, the width B3 of the convex portion Ra is about 25% larger than the width B1 of the convex portion Ra in Comparative Example 1, and it is considered that the convex portion Ra of the filling portion Fa is preferably formed. The increase rate of width is less than 30%.

In Example 6, the difficulty of collapse of the photoresist pattern P was further improved as compared with Example 1. From this result, it was confirmed that the collapse of the uneven pattern can be further suppressed by heating the wafer W when the filling liquid L3 is dried.

In Example 7, the difficulty of collapse of the photoresist pattern P was further improved as compared with Example 1. From this result, it was confirmed that the collapse of the uneven pattern can be further suppressed by increasing the supply time of the rinse liquid L2.

1‧‧‧ Coating ‧ developing device
11‧‧‧ Vehicles
11a‧‧‧ side
12‧‧‧Carriage Station
13‧‧‧ Move in and move out
13a‧‧‧Opening and closing
14‧‧‧Underlying reflection preventing film formation (BCT) block
15‧‧‧Photoresist Film Formation (COT) Block
16‧‧‧Upper Reflection Prevention Film Formation (TCT) Block
17‧‧‧Development Processing (DEV) Block
20‧‧‧Rotary Holder
20a‧‧‧ Body Department
20b‧‧‧Rotary axis
20c‧‧‧Sucker
22‧‧‧ Lifting device
23‧‧‧developing solution supply unit (processing liquid supply unit)
23a‧‧‧Supply source
23b‧‧‧Supply tube
23c‧‧‧ developer nozzle
23d‧‧‧Mobile
23e‧‧‧arm
24‧‧‧Drying liquid supply department
24a‧‧‧Supply source
24b‧‧‧Supply tube
24c‧‧‧ rinse liquid nozzle
24d‧‧‧Mobile
24e‧‧‧arm
25‧‧‧ Filling Fluid Supply Department
25a‧‧‧Supply source
25b‧‧‧Supply tube
25c‧‧‧Filling fluid nozzle
25d‧‧‧Mobile
25e‧‧‧arm
26‧‧‧Backside rinse supply unit
26a‧‧‧Supply source
26b‧‧‧Supply tube
26c‧‧‧Back rinse nozzle
27‧‧‧Control unit (pattern forming control unit, filling control unit, back flushing control unit)
30‧‧‧ cup
31‧‧‧floor
31a‧‧‧Liquid drain hole
31b‧‧‧ gas discharge hole
32‧‧‧ outer wall
32a‧‧‧Upper
32b‧‧‧Sloping wall
33‧‧‧ inner wall
33a‧‧‧Upper
34‧‧‧ partition wall
35‧‧‧Draining tube
36‧‧‧Exhaust pipe
37‧‧‧ Umbrella
38‧‧‧ Spacer
40‧‧‧rails
A1, A8‧‧‧ transmission arm
A2~A5‧‧‧Transport arm
A6‧‧‧Direct handling arm
A7‧‧‧ lifting arm
B1~B7‧‧‧Width
C30~C38, C40~C42‧‧‧ unit
E1‧‧‧Exposure device
F‧‧‧film
Fa‧‧‧Filling Department
H1~H7‧‧‧ Height
H'3~ H'6‧‧‧ Height
H1~h4‧‧‧Spit
L1‧‧‧ developer (treatment solution)
L2‧‧‧ rinse
L3‧‧‧ Filling Fluid
L4‧‧‧Back rinse
P‧‧‧resist pattern (bump pattern)
R‧‧‧Photoresist film
Ra‧‧‧ convex
Rb‧‧‧ recess
S1‧‧‧ carrying block
S2‧‧‧ processing block
S3‧‧‧ interface block
U1‧‧‧Development Processing Unit (Substrate Processing Unit)
U2‧‧‧heating ‧ cooling unit (heat treatment department)
U10, U11‧‧‧ scaffolding unit
W‧‧‧ wafer (substrate
Wa‧‧‧ surface
Wb‧‧‧ back ω1~ω5‧‧‧ rpm

Fig. 1 is a perspective view of a coating and developing system including the substrate processing apparatus of the embodiment. Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1. Fig. 3 is a cross-sectional view taken along line III-III of Fig. 2. Fig. 4 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus. FIG. 5 is a plan view showing a schematic configuration of a substrate processing apparatus. Fig. 6 (a) and (b) are views showing a step of supplying a developing solution. Fig. 7 (a) and (b) are views showing a step of supplying a rinse liquid. Fig. 8 (a), (b), (c), and (d) are diagrams showing a step of forming a filling portion. Fig. 9 (a) to (g) are electron micrographs of a cross section of a photoresist pattern formed by a comparative example and an example. Fig. 10 is a graph showing the evaluation results of the collapse difficulty of the photoresist patterns formed in the comparative examples and the examples.

20‧‧‧Rotary Holder

20a‧‧‧ Body Department

20b‧‧‧Rotary axis

20c‧‧‧Sucker

22‧‧‧ Lifting device

23‧‧‧developing solution supply unit (processing liquid supply unit)

23a‧‧‧Supply source

23b‧‧‧Supply tube

23c‧‧‧ developer nozzle

24‧‧‧Drying liquid supply department

24a‧‧‧Supply source

24b‧‧‧Supply tube

24c‧‧‧ rinse liquid nozzle

25‧‧‧ Filling Fluid Supply Department

25a‧‧‧Supply source

25b‧‧‧Supply tube

25c‧‧‧Filling fluid nozzle

26‧‧‧Backside rinse supply unit

26a‧‧‧Supply source

26b‧‧‧Supply tube

26c‧‧‧Back rinse nozzle

27‧‧‧Control Department

30‧‧‧ cup

31‧‧‧floor

31a‧‧‧Liquid drain hole

31b‧‧‧ gas discharge hole

32‧‧‧ outer wall

32a‧‧‧Upper

32b‧‧‧Sloping wall

33‧‧‧ inner wall

33a‧‧‧Upper

34‧‧‧ partition wall

35‧‧‧Draining tube

36‧‧‧Exhaust pipe

37‧‧‧ Umbrella

38‧‧‧ Spacer

H1~h4‧‧‧Spit

U1‧‧‧Development Processing Unit (Substrate Processing Unit)

W‧‧‧ wafer (substrate)

Wa‧‧‧ surface

Wb‧‧‧ back

Claims (17)

A substrate processing apparatus includes: a rotation holding unit that holds and rotates a substrate; a processing liquid supply unit that supplies a processing liquid for forming a concave-convex pattern on a surface of the substrate; a rinse liquid supply unit that supplies a rinse liquid; and a filling liquid supply The aqueous solution of the water-soluble polymer is a filling liquid, and the concentration of the water-soluble polymer is 1 to 5%. The pattern forming control unit controls the rotating holding portion and the processing liquid supply unit to face the substrate. After the processing liquid is supplied to the surface of the substrate while rotating, the rotation holding portion and the rinse liquid supply portion are controlled to rotate the substrate to supply the rinse liquid to the surface of the substrate. And a filling control unit that supplies the filling liquid to the concave-convex pattern while rotating the substrate while controlling the rotation holding unit and the filling liquid supply unit, and replaces the rinse liquid with the filling liquid. After the liquid, the rotation holding portion is controlled to rotate the substrate, and the filling liquid on the concave-convex pattern is dried, whereby the convex portion having the concave-convex pattern is 20 to 50% high. The filling portion is formed in the concave portion of the concave-convex pattern. The substrate processing apparatus according to claim 1, wherein the pattern forming control unit controls the rotation holding unit to rotate the substrate at a first rotation speed when the rinse liquid is supplied to the surface of the substrate, the filling control Controlling the rotation holding portion to rotate the substrate at a second rotation speed smaller than the first rotation speed when the filling liquid is supplied to the surface of the substrate, and then to be larger than the first rotation speed The rotation speed rotates the substrate. The substrate processing apparatus of claim 2, wherein the first rotational speed is 500 to 1000 rpm, and the third rotational speed is 1000 rpm to 2000 rpm. The substrate processing apparatus according to any one of claims 1 to 3, wherein the filling control unit controls the rotation holding unit and the filling liquid supply unit such that a width of the convex portion is formed along with the filling portion. The increase rate is less than 30%. The substrate processing apparatus according to any one of claims 1 to 3, wherein the filling control unit controls the rotation holding unit to rotate the substrate in a state where the filling liquid is present on the uneven pattern The direction is reversed. The substrate processing apparatus according to any one of claims 1 to 3, further comprising: a heat treatment unit for heating the substrate; the filling control unit controlling the heat treatment unit to dry the filling liquid The substrate is heated. The substrate processing apparatus according to any one of claims 1 to 3, wherein the pattern forming control unit controls the rinse liquid supply unit to control the rinse liquid supply unit to supply water as the rinse liquid. An aqueous solution of a surfactant is supplied as the rinse. The substrate processing apparatus according to any one of claims 1 to 3, further comprising: a back surface rinse liquid supply unit, a back surface rinse liquid supplied to an edge portion of the back surface of the substrate; and a back surface rinse control unit After the formation or formation of the filling portion, the back surface rinse liquid supply portion is controlled to supply the back surface rinse liquid to the edge portion of the back surface of the substrate. A substrate processing method comprising the steps of: supplying a processing liquid to a surface of the substrate while rotating the substrate, and then supplying the rinsing liquid to the surface of the substrate while rotating the substrate, thereby forming a concave-convex pattern on the surface of the substrate; An aqueous solution of a water-soluble polymer, that is, a filling liquid, is supplied to the concave-convex pattern while rotating the substrate, and the concentration of the water-soluble polymer is 1 to 5%, and after the rinse liquid is replaced with the filling liquid, The substrate is rotated to dry the filling liquid on the uneven pattern, and a filling portion having a height of 20 to 50% of the convex portion having the uneven pattern is formed in the concave portion of the concave-convex pattern. The substrate processing method according to claim 9, wherein when the rinsing liquid is supplied to the surface of the substrate, the substrate is rotated at a first rotation speed, and when the filling liquid is supplied to the surface of the substrate, After the second rotation speed of the first rotation speed rotates the substrate, the substrate is rotated at a third rotation speed greater than the first rotation speed. The substrate processing method of claim 10, wherein the first rotation speed is 500 to 1000 rpm, and the third rotation speed is 1000 rpm to 2000 rpm. The substrate processing method according to any one of claims 9 to 11, wherein the increase rate of the width of the convex portion accompanying the formation of the filling portion is less than 30%. The substrate processing method according to any one of claims 9 to 11, wherein the rotation direction of the substrate is reversed in a state in which the filling liquid is present on the uneven pattern. The substrate processing method according to any one of claims 9 to 11, wherein The substrate is heated while the filling liquid is being dried. The substrate processing method according to any one of claims 9 to 11, wherein after water is supplied as the rinse liquid, an aqueous solution of the surfactant is supplied as the rinse liquid. The substrate processing method according to any one of claims 9 to 11, wherein a backside rinse liquid is supplied to an edge portion of the back surface of the substrate during or after formation of the filling portion. A computer-readable recording medium for substrate processing, and a program for causing a substrate processing apparatus to perform the substrate processing method according to any one of claims 9 to 11.