TWI570950B - 發光二極體的封閉接近準直儀 - Google Patents

發光二極體的封閉接近準直儀 Download PDF

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Publication number
TWI570950B
TWI570950B TW098121907A TW98121907A TWI570950B TW I570950 B TWI570950 B TW I570950B TW 098121907 A TW098121907 A TW 098121907A TW 98121907 A TW98121907 A TW 98121907A TW I570950 B TWI570950 B TW I570950B
Authority
TW
Taiwan
Prior art keywords
collimator
light emitting
emitting diode
substrate
light
Prior art date
Application number
TW098121907A
Other languages
English (en)
Chinese (zh)
Other versions
TW201004001A (en
Inventor
賈夫 珍 迪
馬丁納司 佩托司 喬瑟夫 彼得斯
艾維拉 喬漢娜 瑪麗亞 保羅桑
丹尼爾 安敦 貝諾伊
德 魯伯 馬席勒斯 約克伯斯 喬恩斯 凡
喬治 修伯特 波若
馬克 愛德華 喬翰 西比其斯
克里斯多夫 賈雅德 奧谷斯特 荷蘭恩
Original Assignee
皇家飛利浦有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 皇家飛利浦有限公司 filed Critical 皇家飛利浦有限公司
Publication of TW201004001A publication Critical patent/TW201004001A/zh
Application granted granted Critical
Publication of TWI570950B publication Critical patent/TWI570950B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
TW098121907A 2008-07-01 2009-06-29 發光二極體的封閉接近準直儀 TWI570950B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08159402 2008-07-01

Publications (2)

Publication Number Publication Date
TW201004001A TW201004001A (en) 2010-01-16
TWI570950B true TWI570950B (zh) 2017-02-11

Family

ID=41210907

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098121907A TWI570950B (zh) 2008-07-01 2009-06-29 發光二極體的封閉接近準直儀

Country Status (8)

Country Link
US (1) US20110095328A1 (enExample)
EP (1) EP2294635A1 (enExample)
JP (1) JP5770084B2 (enExample)
KR (1) KR101582522B1 (enExample)
CN (1) CN102084508B (enExample)
RU (1) RU2501122C2 (enExample)
TW (1) TWI570950B (enExample)
WO (1) WO2010001309A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110116262A1 (en) * 2009-11-13 2011-05-19 Phoseon Technology, Inc. Economical partially collimating reflective micro optical array
DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
JP6900571B2 (ja) * 2017-08-03 2021-07-07 ルミレッズ リミテッド ライアビリティ カンパニー 発光装置を製造する方法
CN113972235A (zh) * 2020-07-22 2022-01-25 群创光电股份有限公司 制造发光装置的方法

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TW200403141A (en) * 2002-04-29 2004-03-01 3M Innovative Properties Co Removable antireflection film
TW200409478A (en) * 2002-06-13 2004-06-01 Cree Inc Saturated phosphor solid state emitter
TW200616257A (en) * 2004-11-05 2006-05-16 Samsung Electro Mech White light emitting diode package and method of manufacturing the same
TW200703710A (en) * 2005-07-01 2007-01-16 Lamina Ceramics Inc Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them

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JPS5856483A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 光半導体装置
JP2000183407A (ja) * 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
RU2220478C2 (ru) * 2001-11-23 2003-12-27 Федеральное государственное унитарное предприятие "Научно-исследовательский институт полупроводниковых приборов" Источник света
US7244965B2 (en) * 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US20050133808A1 (en) * 2003-09-11 2005-06-23 Kyocera Corporation Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
JP4773048B2 (ja) * 2003-09-30 2011-09-14 シチズン電子株式会社 発光ダイオード
JP4289144B2 (ja) * 2003-12-15 2009-07-01 シチズン電子株式会社 発光ダイオード
CN100391020C (zh) * 2004-02-26 2008-05-28 松下电器产业株式会社 Led光源
US20050225222A1 (en) * 2004-04-09 2005-10-13 Joseph Mazzochette Light emitting diode arrays with improved light extraction
WO2005109529A1 (en) 2004-05-07 2005-11-17 Koninklijke Philips Electronics N.V. Light-emitting-diode chip package and a collimator
KR101228848B1 (ko) * 2004-09-20 2013-02-01 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Led 시준기 소자, 헤드라이트 및 시준기
DE102004053116A1 (de) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Leuchtdioden-Anordnung mit Farbkonversions-Material
JP4845370B2 (ja) 2004-11-26 2011-12-28 京セラ株式会社 発光装置および照明装置
KR100637476B1 (ko) * 2005-11-09 2006-10-23 알티전자 주식회사 측면발광 다이오드 및 그 제조방법
JP2007194522A (ja) * 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd 発光モジュールとその製造方法
JP4891626B2 (ja) * 2006-02-15 2012-03-07 株式会社 日立ディスプレイズ 液晶表示装置
JP4828248B2 (ja) * 2006-02-16 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
US7682850B2 (en) * 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
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KR20090036148A (ko) * 2006-07-31 2009-04-13 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 발광 장치
JP2010507245A (ja) * 2006-10-20 2010-03-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ コリメート化構造体を有する発光デバイス
CN100555691C (zh) * 2007-09-11 2009-10-28 东南大学 提高功率型发光二极管出光效率的封装结构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200403141A (en) * 2002-04-29 2004-03-01 3M Innovative Properties Co Removable antireflection film
TW200409478A (en) * 2002-06-13 2004-06-01 Cree Inc Saturated phosphor solid state emitter
TW200616257A (en) * 2004-11-05 2006-05-16 Samsung Electro Mech White light emitting diode package and method of manufacturing the same
TW200703710A (en) * 2005-07-01 2007-01-16 Lamina Ceramics Inc Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them

Also Published As

Publication number Publication date
RU2501122C2 (ru) 2013-12-10
JP5770084B2 (ja) 2015-08-26
JP2011526740A (ja) 2011-10-13
TW201004001A (en) 2010-01-16
KR101582522B1 (ko) 2016-01-06
RU2011103456A (ru) 2012-08-10
EP2294635A1 (en) 2011-03-16
US20110095328A1 (en) 2011-04-28
CN102084508A (zh) 2011-06-01
KR20110026002A (ko) 2011-03-14
WO2010001309A1 (en) 2010-01-07
CN102084508B (zh) 2016-01-20

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