TWI568675B - ITO powder and its manufacturing method - Google Patents

ITO powder and its manufacturing method Download PDF

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TWI568675B
TWI568675B TW102129796A TW102129796A TWI568675B TW I568675 B TWI568675 B TW I568675B TW 102129796 A TW102129796 A TW 102129796A TW 102129796 A TW102129796 A TW 102129796A TW I568675 B TWI568675 B TW I568675B
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mass
ito powder
protective agent
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TW201422533A (en
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Takehiro Yonezawa
Kazuhiko Yamasaki
Ai Takenoshita
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Mitsubishi Materials Corp
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00Compounds of tin
    • C01G19/02Oxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/02Making metallic powder or suspensions thereof using physical processes
    • B22F9/06Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00Compounds of gallium, indium or thallium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/90Other properties not specified above

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Description

ITO粉末及其製造方法 ITO powder and method of producing the same

本發明涉及一種在低壓下成為壓坯時顯示出高導電性的表面改性的ITO粉末及其製造方法。本說明書中,ITO是指銦錫氧化物(Indium Tin Oxide)。 The present invention relates to a surface-modified ITO powder which exhibits high electrical conductivity when it is a compact at a low pressure and a method for producing the same. In the present specification, ITO means Indium Tin Oxide.

ITO是In2O3中摻雜有錫(Sn)的化合物,在具有1020~1021cm-3的高載流子濃度,以濺射法等氣相法成膜的ITO膜中,可獲得1×10-4Ω‧cm左右的低電阻率。由該ITO製成的ITO膜中,在可見光區域具有高透明性(例如參考專利文獻1)。因此,ITO膜廣泛用於液晶顯示器的透明電極(例如參考專利文獻2)或熱射線遮罩效果較高的熱射線遮罩材料(例如參考專利文獻3)等要求優異的光學特性的領域中。作為該ITO膜的成膜方法,正在研究基於簡便塗布的成膜法來代替成本較高的真空蒸鍍法和濺射法等物理成膜法(例如參考專利文獻4)。 ITO is a compound doped with tin (Sn) in In 2 O 3 , and has a high carrier concentration of 10 20 to 10 21 cm -3 and can be formed by a vapor phase method such as sputtering. A low resistivity of about 1 × 10 -4 Ω ‧ cm is obtained. The ITO film made of this ITO has high transparency in the visible light region (for example, refer to Patent Document 1). Therefore, the ITO film is widely used in the field of a transparent electrode of a liquid crystal display (for example, refer to Patent Document 2) or a heat ray mask material having a high heat ray shielding effect (for example, refer to Patent Document 3) and the like which requires excellent optical characteristics. As a film forming method of the ITO film, a film forming method based on simple coating has been studied instead of a physical film forming method such as a vacuum vapor deposition method or a sputtering method which is expensive (for example, refer to Patent Document 4).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2009-032699號公報([0009]段) [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-032699 (paragraph [0009])

[專利文獻2]日本專利特開2005-054273號公報([0006]段) [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-054273 (paragraph [0006])

[專利文獻3]日本專利特開2011-116623號公報([0002]段) [Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-116623 (paragraph [0002])

[專利文獻4]日本專利特開2011-034708號公報([0002]段) [Patent Document 4] Japanese Patent Laid-Open No. 2011-034708 (paragraph [0002])

作為成膜ITO膜的方法的塗布型的成膜方法具有材料的利用效率及生產率較高、彎曲性優異、及對於進行塗布的基板的限制較少等優點。然而,與物理成膜方法相比,顆粒本身的導電性較低,顆粒彼此的接觸電阻較高,因此反而存在導電性較低的缺點。 The coating type film forming method as a method of forming an ITO film has advantages such as high material use efficiency and productivity, excellent bendability, and less restriction on a substrate to be coated. However, compared with the physical film formation method, the conductivity of the particles themselves is low, and the contact resistance between the particles is high, so that there is a disadvantage that the conductivity is low.

本發明的目的在於提供一種能夠降低以塗布方式成膜ITO膜時的電阻率來獲得高導電性的ITO粉末及其製造方法。 An object of the present invention is to provide an ITO powder which can reduce the electrical resistivity when a ITO film is formed by coating, thereby obtaining high conductivity and a method for producing the same.

本發明的第1觀點為表面改性的ITO粉末,其為如下ITO粉末:對由前述ITO粉末構成的壓坯施加 0.98MPa(10kgf/cm2)的壓力時的前述壓坯的體積電阻率為0.50Ω‧cm以下,將對前述壓坯施加0.196~29.42MPa(2~300kgf/cm2)的壓力時的前述壓坯的體積電阻率設為Y且前述壓力設為X時,前述壓力與前述體積電阻率之間的關係近似下述公式(1),在該公式(1)中,a為5.00以下,且n為-0.500以下。 The first aspect of the present invention is a surface-modified ITO powder which is an ITO powder having a volume resistivity of the green compact when a pressure of 0.98 MPa (10 kgf/cm 2 ) is applied to the green compact composed of the ITO powder. 0.50 Ω ‧ cm or less, when the volume resistivity of the green compact when the pressure of 0.196 to 29.42 MPa (2 to 300 kgf/cm 2 ) is applied to the green compact is Y and the pressure is X, the pressure is as described above The relationship between the volume resistivities is approximately the following formula (1), in which a is 5.00 or less, and n is -0.500 or less.

Y=aXn (1) Y=aX n (1)

並且,本發明的第2觀點為基於第1觀點的發明,其為包括如下步驟的製造ITO粉末方法的改良:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述共沉澱氫氧化物之步驟;去除前述共沉澱氫氧化物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;乾燥前述漿料之步驟;及燒成前述乾燥的銦錫氫氧化物來獲得銦錫氧化物之步驟,其中,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在前述燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末浸漬於表面處理液後,在氮氣氣氛下,在200~400℃的範圍加熱0.5~5小時。 Further, a second aspect of the present invention is the invention according to the first aspect, which is an improvement of a method for producing an ITO powder comprising the steps of: mixing an aqueous alkaline solution with a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form indium; a step of coprecipitating a hydroxide with tin; a step of washing the coprecipitated hydroxide with pure water or ion-exchanged water; removing the supernatant of the coprecipitated hydroxide to prepare a dispersion of indium tin hydroxide particles a step of slurry; a step of drying the slurry; and a step of firing the dried indium tin hydroxide to obtain indium tin oxide, wherein in the cleaning step, the resist is cleaned to at least a resistivity of the supernatant In the preparation step of the slurry, the slurry from which the supernatant liquid has been removed is diluted with water so that the concentration of the hydroxide particles is in the range of 10 to 30% by mass, and then stirred. At the same time, an organic protective agent in a range of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry, and after the calcination step, the aggregate of the fired ITO powder is pulverized. After the pulverized ITO powder is immersed in the surface treatment liquid, it is heated in a range of 200 to 400 ° C for 0.5 to 5 hours in a nitrogen atmosphere.

本發明的第3觀點為基於第2觀點的發明,其為如下 製造ITO粉末的方法:前述有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽。 A third aspect of the present invention is the invention based on the second aspect, which is as follows Method for producing ITO powder: The aforementioned organic protective agent is palmityl dimethylethylammonium ethyl sulfate, polyvinyl alcohol or octyldimethylethyl ammonium ethyl sulfate.

並且,本發明的第4觀點為基於第1觀點的 發明,其為包括如下步驟的製造ITO粉末方法的改良:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述共沉澱氫氧化物之步驟;去除前述共沉澱氫氧化物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;乾燥前述漿料之步驟;及燒成前述乾燥的銦錫氫氧化物來獲得銦錫氧化物之步驟。其中,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在前述乾燥步驟中,對添加有前述有機保護劑且分散有銦錫氫氧化物的漿料進行乾燥,在前述燒成步驟中,在大氣中以2.45GHz~28GHz的微波進行加熱燒成,在前述燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末浸漬於表面處理液後,在氮氣氣氛下,在200~400℃的範圍加熱0.5~5小時。 Furthermore, the fourth aspect of the present invention is based on the first aspect. The invention is an improvement of a method for producing an ITO powder comprising the steps of: mixing a basic aqueous solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin; Or the step of washing the coprecipitated hydroxide by ion-exchanged water; removing the supernatant of the coprecipitated hydroxide to prepare a slurry in which the indium tin hydroxide particles are dispersed; the step of drying the slurry; and burning The step of obtaining the indium tin oxide by the aforementioned dry indium tin hydroxide. Wherein, in the washing step, the resistivity of the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the slurry from which the supernatant is removed is diluted with water to make the hydrogen After the concentration of the oxide particles is in the range of 10 to 30% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring. In the drying step, the slurry in which the above-mentioned organic protective agent is added and in which indium tin hydroxide is dispersed is dried, and in the baking step, it is heated and fired in a microwave of 2.45 GHz to 28 GHz in the air, and the above-mentioned burning is performed. After the step, the aggregate of the fired ITO powder is pulverized, and the pulverized ITO powder is immersed in the surface treatment liquid, and then heated in a range of 200 to 400 ° C for 0.5 to 5 hours in a nitrogen atmosphere.

本發明的第5觀點為基於第4觀點的發明,其為如下製造ITO粉末的方法:前述有機保護劑為棕櫚基二甲基乙 基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽。 A fifth aspect of the present invention is the invention according to the fourth aspect, which is the method for producing an ITO powder: the organic protective agent is palmityldimethyl B Alkyl ammonium ethyl sulfate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulfate.

並且,本發明的第6觀點為基於第1觀點的 發明,其為包括如下步驟的製造ITO粉末方法的改良:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述共沉澱氫氧化物之步驟;去除前述共沉澱氫氧化物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;乾燥前述漿料之步驟;及燒成前述乾燥的銦錫氫氧化物來獲得銦錫氧化物之步驟。其中,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以醇進行稀釋以使前述氫氧化物顆粒的濃度成為1~5質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在前述燒成步驟中,向加熱至250~800℃的範圍的管式爐的內部,在使氮氣以0.5~5m/s的範圍的線速度流通的狀態下,將以前述醇稀釋且添加有前述有機保護劑並且分散有銦錫氫氧化物顆粒的漿料進行噴霧,從而在前述管式爐內熱分解並燒成銦錫氫氧化物顆粒來獲得銦錫氧化物顆粒。 Furthermore, the sixth aspect of the present invention is based on the first aspect. The invention is an improvement of a method for producing an ITO powder comprising the steps of: mixing a basic aqueous solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin; Or the step of washing the coprecipitated hydroxide by ion-exchanged water; removing the supernatant of the coprecipitated hydroxide to prepare a slurry in which the indium tin hydroxide particles are dispersed; the step of drying the slurry; and burning The step of obtaining the indium tin oxide by the aforementioned dry indium tin hydroxide. Wherein, in the washing step, the resistivity of the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the slurry from which the supernatant is removed is diluted with alcohol to make the hydrogen After the concentration of the oxide particles is in the range of 1 to 5% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring. In the firing step, the inside of the tube furnace heated to a range of 250 to 800 ° C is diluted with the alcohol and added to the organic state while flowing nitrogen gas at a linear velocity in the range of 0.5 to 5 m/s. The protective agent and the slurry in which the indium tin hydroxide particles are dispersed are sprayed to thermally decompose and calcine the indium tin hydroxide particles in the aforementioned tube furnace to obtain indium tin oxide particles.

本發明的第7觀點為基於第6觀點的發明,其為如下製造ITO粉末的方法:前述醇為乙醇、甲醇或丙醇,前述有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇 或辛基二甲基乙基銨乙基硫酸鹽。 A seventh aspect of the invention is the invention according to the sixth aspect, which is a method for producing an ITO powder: the alcohol is ethanol, methanol or propanol, and the organic protective agent is palmityldimethylethylammonium ethyl sulfate Polyvinyl alcohol Or octyl dimethyl ethyl ammonium ethyl sulfate.

並且,本發明的第8觀點為將第1觀點的ITO粉末或通過第2~第7中任一種方法製造出的ITO粉末分散於溶劑中來製造分散液的方法。 Furthermore, the eighth aspect of the present invention is a method for producing a dispersion by dispersing an ITO powder of the first aspect or an ITO powder produced by any one of the second to seventh methods in a solvent.

並且,本發明的第9觀點為由第8觀點的分散液製造ITO膜的方法。 Further, a ninth aspect of the present invention is the method for producing an ITO film from the dispersion liquid of the eighth aspect.

本發明的第1觀點的ITO粉末,施加0.98MPa(10kgf/cm2)的壓力時的ITO粉末的壓坯的體積電阻率為0.50Ω‧cm以下,將對前述壓坯施加0.196~29.42MPa(2~300kgf/cm2)的壓力時的前述壓坯的體積電阻率設為Y並將前述壓力設為X時,近似於上述公式(1),公式(1)中的a為5.00以下且n為-0.500以下,因此,能夠降低利用該ITO粉末以塗布方式成膜ITO膜時的電阻率來獲得高導電性。 In the ITO powder according to the first aspect of the invention, the volume resistivity of the green compact of the ITO powder when a pressure of 0.98 MPa (10 kgf/cm 2 ) is applied is 0.50 Ω ‧ cm or less, and 0.196 to 29.42 MPa is applied to the green compact ( When the volume resistivity of the green compact at a pressure of 2 to 300 kgf/cm 2 ) is Y and the pressure is X, the equation (1) is approximated, and a in the formula (1) is 5.00 or less and n Since it is -0.500 or less, it is possible to reduce the electrical resistivity when the ITO film is formed by coating with the ITO powder to obtain high conductivity.

並且,本發明的第2觀點的ITO粉末的製造方法中,在清洗步驟中,清洗至上清液的電阻率至少達到5000Ω‧cm,在漿料的製備步驟中,將去除了上清液的漿料以水進行稀釋以使氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末浸漬於表面處理液後,在氮氣氣 氛下,在200~400℃的範圍加熱0.5~5小時。氫氧化物顆粒被分解溫度比較高的有機保護劑包覆,因此在燒成過程中,ITO顆粒彼此的接觸被阻止,顆粒生長困難。該有機保護劑通過燒成而最終熱分解。由此,ITO粉末的表面被改性,能夠降低利用該ITO粉末以塗布方式成膜ITO膜時的電阻率來獲得高導電性。 Further, in the method for producing an ITO powder according to the second aspect of the present invention, in the cleaning step, the resistivity of the supernatant is at least 5,000 Ω·cm, and in the preparation step of the slurry, the supernatant is removed. After the material is diluted with water so that the concentration of the hydroxide particles is in the range of 10 to 30% by mass, the slurry is added to the slurry in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles. In the range of the organic protective agent, after the firing step, the aggregate of the fired ITO powder is pulverized, and the pulverized ITO powder is immersed in the surface treatment liquid, followed by nitrogen gas. Under the atmosphere, it is heated in the range of 200~400 °C for 0.5~5 hours. The hydroxide particles are coated with an organic protective agent having a relatively high decomposition temperature, so that contact between the ITO particles is prevented during the firing process, and particle growth is difficult. The organic protective agent is finally thermally decomposed by firing. Thereby, the surface of the ITO powder is modified, and the electrical resistivity at the time of forming the ITO film by the coating method of the ITO powder can be reduced, and high conductivity can be obtained.

並且,本發明的第4觀點的ITO粉末的製造 方法中,在清洗步驟中,清洗至上清液的電阻率至少達到5000Ω‧cm,在漿料的製備步驟中,將去除了上清液的漿料以水進行稀釋以使氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在乾燥步驟中,對添加有有機保護劑且分散有銦錫氫氧化物的漿料進行乾燥,在燒成步驟中,在大氣中以2.45GHz~28GHz的微波進行加熱燒成,在燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末浸漬於表面處理液後,在氮氣氣氛下,在200~400℃的範圍加熱0.5~5小時。氫氧化物顆粒被分解溫度比較高的有機保護劑包覆,因此在燒成過程中,ITO顆粒彼此的接觸被阻止,顆粒生長困難。該有機保護劑通過燒成而最終熱分解。由此,ITO粉末的表面被改性,能夠降低利用該ITO粉末以塗布方式成膜ITO膜時的電阻率來獲得高導電性。 Further, the production of the ITO powder of the fourth aspect of the present invention In the method, in the washing step, the resistivity of the supernatant to the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the slurry from which the supernatant is removed is diluted with water to make the concentration of the hydroxide particles After being in the range of 10 to 30% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring, and in the drying step, the addition is carried out. The slurry having an organic protective agent and in which indium tin hydroxide is dispersed is dried, and in the firing step, it is heated and fired in a microwave of 2.45 GHz to 28 GHz in the air, and after the firing step, the fired is pulverized. The aggregate of the ITO powder is immersed in the surface treatment liquid in the ITO powder, and then heated in the range of 200 to 400 ° C for 0.5 to 5 hours in a nitrogen atmosphere. The hydroxide particles are coated with an organic protective agent having a relatively high decomposition temperature, so that contact between the ITO particles is prevented during the firing process, and particle growth is difficult. The organic protective agent is finally thermally decomposed by firing. Thereby, the surface of the ITO powder is modified, and the electrical resistivity at the time of forming the ITO film by the coating method of the ITO powder can be reduced, and high conductivity can be obtained.

並且,本發明的第6觀點的ITO粉末的製造 方法中,在清洗步驟中,清洗至上清液的電阻率至少達到5000Ω‧cm,在漿料的製備步驟中,將去除了上清液的漿料以醇進行稀釋以使氫氧化物顆粒的濃度成為1~5質量%的範圍後,在攪拌的同時向前述漿料中添加相對於氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,在前述燒成步驟中,向加熱至250~800℃的範圍的管式爐的內部,以使氮氣以0.5~5m/s的範圍的線速度流通的狀態下,將以醇稀釋且添加有有機保護劑並且分散有銦錫氫氧化物顆粒的漿料進行噴霧,從而在管式爐內熱分解並燒成銦錫氫氧化物顆粒來獲得銦錫氧化物顆粒。氫氧化物顆粒被分解溫度比較高的有機保護劑包覆,因此在燒成過程中,ITO顆粒彼此的接觸被阻止,顆粒生長困難。 該有機保護劑通過燒成而最終熱分解。由此,ITO粉末的表面被改性,能夠降低利用該ITO粉末以塗布方式成膜ITO膜時的電阻率來獲得高導電性。 Further, the production of the ITO powder of the sixth aspect of the present invention In the method, in the washing step, the resistivity of the supernatant to the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the slurry from which the supernatant is removed is diluted with alcohol to make the concentration of the hydroxide particles After being in the range of 1 to 5% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring, and in the baking step, The inside of the tube furnace heated to a range of 250 to 800 ° C, in which nitrogen gas is circulated at a linear velocity in the range of 0.5 to 5 m/s, diluted with alcohol, and added with an organic protective agent and dispersed with indium tin hydride The slurry of oxide particles is sprayed to thermally decompose and calcine the indium tin hydroxide particles in a tube furnace to obtain indium tin oxide particles. The hydroxide particles are coated with an organic protective agent having a relatively high decomposition temperature, so that contact between the ITO particles is prevented during the firing process, and particle growth is difficult. The organic protective agent is finally thermally decomposed by firing. Thereby, the surface of the ITO powder is modified, and the electrical resistivity at the time of forming the ITO film by the coating method of the ITO powder can be reduced, and high conductivity can be obtained.

[圖1]是測定ITO粉末的壓坯的電阻率的裝置的示意圖。 Fig. 1 is a schematic view of an apparatus for measuring the electrical resistivity of a green compact of ITO powder.

[圖2]是表示外加壓力與ITO粉末的壓坯的電阻率之間的關係的圖。 Fig. 2 is a graph showing the relationship between the applied pressure and the specific resistance of the green compact of the ITO powder.

接著,對具體實施方式進行說明。 Next, a specific embodiment will be described.

ITO粉末的電阻率是在對由該ITO粉末製成的ITO膜的特性進行評價時的重要指標。尤其在將ITO膜用作導電性薄片或電極時,要求高導電性即低電阻率。該ITO粉末的電阻率通過使ITO粉末成為壓坯的形態後測定其體積電阻率來求出。另一方面,壓坯的體積電阻率隨著外加的壓力而變化。因此,雖然某一既定壓力下的壓坯的體積電阻率成為暫定基準,但若通過ITO粉末的形狀及比表面積,在從低壓改變成高壓的狀態下求出體積電阻率並將其設為ITO粉末的電阻率,則可求出精確度更良好的ITO粉末的電阻率。本發明是基於這種見解而完成的。 The electrical resistivity of the ITO powder is an important index when evaluating the characteristics of the ITO film made of the ITO powder. In particular, when an ITO film is used as a conductive sheet or an electrode, high conductivity, that is, low resistivity is required. The electrical resistivity of the ITO powder was determined by measuring the volume resistivity of the ITO powder in the form of a green compact. On the other hand, the volume resistivity of the green compact varies with the applied pressure. Therefore, although the volume resistivity of the green compact under a predetermined pressure is a tentative reference, the volume resistivity is determined by changing the shape and specific surface area of the ITO powder from a low pressure to a high pressure, and this is made into ITO. The resistivity of the powder can be used to determine the electrical resistivity of the ITO powder with better accuracy. The present invention has been completed based on this finding.

本發明的ITO粉末為表面改性的ITO粉末, 對由該ITO粉末構成的壓坯施加0.98MPa(10kgf/cm2)的壓力時的壓坯的體積電阻率為0.50Ω‧cm以下,將對壓坯施加0.196~29.42MPa(2~300kgf/cm2)的壓力時的壓坯的體積電阻率設為Y且壓力設為X時,壓力與體積電阻率之間的關係近似下述公式(1)。其中,公式(1)的a為5.00以下,且n為-0.500以下。 The ITO powder of the present invention is a surface-modified ITO powder, and when the pressure of 0.98 MPa (10 kgf/cm 2 ) is applied to the green compact composed of the ITO powder, the volume resistivity of the green compact is 0.50 Ω ‧ cm or less, which is correct When the volume resistivity of the green compact when the green compact is applied with a pressure of 0.196 to 29.42 MPa (2 to 300 kgf/cm 2 ) is set to Y and the pressure is set to X, the relationship between the pressure and the volume resistivity approximates the following formula (1) ). Here, a of the formula (1) is 5.00 or less, and n is -0.500 or less.

Y=aXn (1) Y=aX n (1)

該公式是根據對表面改性且體積電阻率較低的ITO粉末以壓坯的狀態進行測定的結果來推導出的。若上述a超過5.00或n超過-0.500,則存在即使對粉末的外加壓力變大、即加強顆粒彼此的接觸也難以提高導電性的趨勢,存在不良情況。 This formula is derived from the result of measuring the state of the green compact of the ITO powder whose surface modification is low and the volume resistivity is low. When the above a exceeds 5.00 or n exceeds -0.500, there is a tendency that it is difficult to increase the conductivity even if the applied pressure to the powder is increased, that is, the contact between the reinforcing particles is increased, and there is a problem.

用於製造本發明的ITO膜的ITO粉末為由以 下3種方法製造出的進行表面改性處理的ITO粉末。通過進行表面改性處理,能夠提高利用該ITO粉末製造出的ITO膜的導電性。 The ITO powder used to manufacture the ITO film of the present invention is The surface-modified ITO powder produced by the following three methods. By performing the surface modification treatment, the conductivity of the ITO film produced using the ITO powder can be improved.

(1)第1製造方法 (1) First manufacturing method

在3價銦化合物與2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物,將該沉澱乾燥、燒成後,粉碎所獲得的銦錫氧化物來獲得ITO粉末。作為3價銦化合物,可舉出三氯化銦(InCl3)、硝酸銦(In(NO3)3)、醋酸銦(In(CH3COO)3)等,作為2價錫化合物,可舉出二氯化錫(SnCl2‧2H2O)、硫酸錫(SnSO4)、溴化錫(SnBr2)等。作為鹼性水溶液,可舉出氨(NH3)水、碳酸氫銨(NH4HCO3)水等。通過將使銦與錫的氫氧化物共沉澱時的反應溶液的最終pH調整為3.5~9.3,較佳調整為pH5.0~8.0,將溶液溫度調整為5℃以上,較佳調整為溶液溫度10℃~80℃,能夠使銦與錫的共沉澱氫氧化物沉澱。鹼性水溶液的混合可以將鹼性水溶液滴入於上述混合水溶液中來調整為上述pH範圍的同時進行,或者也可以將上述混合水溶液與鹼性水溶液同時滴入於水中來調整為上述pH範圍的同時進行。 An aqueous alkaline solution is mixed with a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin, and the precipitate is dried and fired, and then the obtained indium tin oxide is pulverized to obtain ITO. powder. Examples of the trivalent indium compound include indium trichloride (InCl 3 ), indium nitrate (In(NO 3 ) 3 ), and indium acetate (In(CH 3 COO) 3 ). Tin dichloride (SnCl 2 ‧2H 2 O), tin sulfate (SnSO 4 ), tin bromide (SnBr 2 ), and the like are obtained. Examples of the alkaline aqueous solution include ammonia (NH 3 ) water, ammonium hydrogencarbonate (NH 4 HCO 3 ) water, and the like. The final pH of the reaction solution when the indium and tin hydroxide are coprecipitated is adjusted to 3.5 to 9.3, preferably adjusted to pH 5.0 to 8.0, and the solution temperature is adjusted to 5 ° C or higher, preferably adjusted to the solution temperature. From 10 ° C to 80 ° C, it is possible to precipitate a coprecipitated hydroxide of indium and tin. The alkaline aqueous solution may be mixed while the aqueous alkaline solution is dropped into the mixed aqueous solution to adjust to the above pH range, or the mixed aqueous solution and the alkaline aqueous solution may be simultaneously dropped into water to adjust to the above pH range. At the same time.

生成上述共沉澱銦錫氫氧化物後,以純水或離子交換水清洗該沉澱物,清洗至上清液的電阻率至少達到5000Ω‧cm,較佳至少達到50000Ω‧cm。若上清液的電 阻率低於5000Ω‧cm,則氯等雜質不被充分除去,無法獲得高純度的銦錫氧化物粉末。去除電阻率達到5000Ω‧cm以上的上述沉澱物的上清液,獲得分散有銦錫氫氧化物顆粒的黏度較高的漿料。以純水或離子交換水對該漿料進行稀釋以使氫氧化物顆粒的濃度成為10~30質量%的範圍,較佳成為15~25質量%的範圍,之後,在攪拌的同時向漿料中添加用於吸附於氫氧化物顆粒表面來提高該顆粒的分散性的有機保護劑。上述稀釋範圍小於下限值時,存在漿料的乾燥中耗時的不良情況,若超過上限值,則會在漿料的黏度較高的狀態下混合有機保護劑,因此存在有機保護劑的混合不充分的不良情況。相對於氫氧化物顆粒100質量%,該有機保護劑的添加量為0.1~5質量%的範圍。從該有機保護劑抑制熱分解後的ITO粉末的燒結的觀點來看,較佳有機保護劑的分解溫度在250~500℃的範圍內。作為該有機保護劑,可舉出棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽等。 有機保護劑的添加量小於上述範圍的下限值時,無法充分進行氫氧化物顆粒表面的保護,顆粒的分散性較差。並且,若超過上限值,則會發生有機物的一部分或來自有機物的碳成分殘留的不良情況。 After the coprecipitated indium tin hydroxide is formed, the precipitate is washed with pure water or ion-exchanged water, and washed until the resist has a resistivity of at least 5,000 Ω ‧ cm, preferably at least 50,000 Ω ‧ cm. If the supernatant is charged When the resistivity is less than 5,000 Ω ‧ cm, impurities such as chlorine are not sufficiently removed, and high-purity indium tin oxide powder cannot be obtained. The supernatant of the above precipitate having a specific resistance of 5000 Ω ‧ cm or more was removed to obtain a slurry having a high viscosity in which indium tin hydroxide particles were dispersed. The slurry is diluted with pure water or ion-exchanged water so that the concentration of the hydroxide particles is in the range of 10 to 30% by mass, preferably 15 to 25% by mass, and then, while stirring, to the slurry. An organic protective agent for adsorbing on the surface of the hydroxide particles to increase the dispersibility of the particles is added. When the dilution range is less than the lower limit, there is a problem in that the slurry is dried in a time-consuming manner. When the concentration exceeds the upper limit, the organic protective agent is mixed in a state in which the viscosity of the slurry is high. Therefore, the organic protective agent is present. Poorly mixed conditions. The amount of the organic protective agent added is in the range of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles. From the viewpoint of suppressing the sintering of the ITO powder after thermal decomposition of the organic protective agent, the decomposition temperature of the organic protective agent is preferably in the range of 250 to 500 °C. Examples of the organic protective agent include palmityl dimethylethylammonium ethyl sulfate, polyvinyl alcohol, and octyldimethylethylammonium ethyl sulfate. When the amount of the organic protective agent added is less than the lower limit of the above range, the surface of the hydroxide particles is not sufficiently protected, and the dispersibility of the particles is inferior. Further, when the value exceeds the upper limit, a part of the organic substance or a carbon component derived from the organic substance may remain.

在大氣中,較佳在氮或氬等惰性氣體氣氛 下,將表面吸附有有機保護劑的銦錫氫氧化物在100~200℃的範圍乾燥2~24小時後,在大氣中在250~800℃的範圍用燒成爐燒成0.5~6小時。利用錘磨機或球磨機 等,將通過該燒成所形成的聚集體粉碎並分解來獲得ITO粉末。將該ITO粉末放入混合有50~95質量%的無水乙醇與5~50質量%的蒸餾水的表面處理液中來將其浸漬後,放入玻璃皿中,在氮氣氣氛下在200~400℃的範圍加熱0.5~5小時,則可獲得進行表面改性處理的ITO粉末。 In the atmosphere, preferably in an inert gas atmosphere such as nitrogen or argon Next, the indium tin hydroxide having the organic protective agent adsorbed on the surface thereof is dried in the range of 100 to 200 ° C for 2 to 24 hours, and then fired in a baking furnace for 0.5 to 6 hours in the air at a temperature of 250 to 800 ° C. Use a hammer mill or a ball mill Etc., the aggregate formed by the firing is pulverized and decomposed to obtain an ITO powder. The ITO powder is placed in a surface treatment liquid in which 50 to 95% by mass of absolute ethanol and 5 to 50% by mass of distilled water are mixed, and then immersed in a glass dish at 200 to 400 ° C in a nitrogen atmosphere. When the range is heated for 0.5 to 5 hours, an ITO powder subjected to surface modification treatment can be obtained.

(2)第2製造方法 (2) Second manufacturing method

漿料的固液分離方法及加熱燒成方法與第1製造方法不同。首先,對以第1製造方法獲得的添加有有機保護劑且分散有銦錫氫氧化物的漿料進行乾燥。作為該乾燥方法的一例,用加壓泵將漿料壓入於壓濾器內來獲得氫氧化物的泥餅,乾燥該泥餅。接著將乾燥物在大氣中以2.45GHz~28GHz的微波進行加熱燒成。該微波加熱處理例如將上述泥餅填充於CMC技術開發有限公司製的微波爐中,並利用四國計測工業製的μ-reactor的2.45GHz的微波加熱處理來進行。 The solid-liquid separation method and the heating and firing method of the slurry are different from the first production method. First, the slurry obtained by the first production method and having an organic protective agent added thereto and in which indium tin hydroxide is dispersed is dried. As an example of the drying method, a slurry is pressed into a pressure filter by a pressurizing pump to obtain a mud cake of a hydroxide, and the cake is dried. Next, the dried product was heated and fired in the air at a microwave of 2.45 GHz to 28 GHz. In the microwave heat treatment, for example, the cake is filled in a microwave oven manufactured by CMC Technology Development Co., Ltd., and is subjected to microwave heating treatment of 2.45 GHz of a μ-reactor manufactured by Shikoku Industrial Co., Ltd.

微波加熱是在250~800℃的範圍內,較佳在 350~600℃的範圍內,以在10分鐘以內達到目標溫度的速度升溫來進行,燒成通過在目標溫度保持5~120分鐘的範圍,較佳保持10~60分鐘的範圍來進行。加熱溫度小於下限值時,存在氫氧化物不完全分解成氧化物的不良情況,若超過上限值,則存在ITO顆粒粗大化的不良情況。若至目標溫度為止的升溫時間超過10分鐘,則存在 急速升溫的效果消失的不良情況。若在目標溫度下的保持時間小於下限值,則存在氫氧化物不完全分解成氧化物的不良情況,若超過上限值,則存在ITO顆粒粗大化的不良情況。利用錘磨機或球磨機等將燒成物粉碎並分解來獲得ITO粉末。以下,與第1製造方法同樣地來獲得進行表面改性處理的ITO粉末。 Microwave heating is in the range of 250~800 °C, preferably In the range of 350 to 600 ° C, the temperature is raised at a temperature that reaches the target temperature within 10 minutes, and the firing is carried out by maintaining the target temperature in the range of 5 to 120 minutes, preferably in the range of 10 to 60 minutes. When the heating temperature is less than the lower limit, there is a problem that the hydroxide is not completely decomposed into an oxide, and if it exceeds the upper limit, there is a problem that the ITO particles are coarsened. If the temperature rise time to the target temperature exceeds 10 minutes, there is The problem of rapid warming disappears. If the holding time at the target temperature is less than the lower limit, there is a problem that the hydroxide is not completely decomposed into an oxide, and if it exceeds the upper limit, there is a problem that the ITO particles are coarsened. The ITO powder is obtained by pulverizing and decomposing the fired product by a hammer mill, a ball mill or the like. Hereinafter, the ITO powder subjected to the surface modification treatment was obtained in the same manner as in the first production method.

(3)第3製造方法 (3) Third manufacturing method

無需在燒成銦錫氫氧化物後粉碎銦錫氧化物,這一點與第1及第2製造方法不同。 It is not necessary to pulverize the indium tin oxide after firing the indium tin hydroxide, which is different from the first and second manufacturing methods.

將以第1製造方法獲得的分散有銦錫氫氧化物顆粒的黏度較高的漿料以醇進行稀釋以使氫氧化物顆粒的濃度成為1~5質量%的範圍,較佳成為1~3質量%的範圍,並在攪拌的同時向漿料中添加用於吸附於氫氧化物顆粒表面來提高該顆粒的分散性的有機保護劑。相對於氫氧化物顆粒100質量%,該有機保護劑的添加量為0.1~5質量%的範圍。規定上述稀釋範圍及上述有機保護劑的添加量範圍的各下限值及各上限值的理由與第1製造方法相同。從該有機保護劑抑制熱分解後的ITO粉末的燒結的觀點來看,較佳有機保護劑的分解溫度在250~500℃的範圍內。作為該醇,可舉出乙醇、丙醇或甲醇等,作為有機保護劑,可舉出棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽等。 The slurry having a high viscosity in which the indium tin hydroxide particles are dispersed by the first production method is diluted with an alcohol so that the concentration of the hydroxide particles is in the range of 1 to 5% by mass, preferably 1 to 3. A range of mass %, and an organic protective agent for adsorbing on the surface of the hydroxide particles to increase the dispersibility of the particles is added to the slurry while stirring. The amount of the organic protective agent added is in the range of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles. The reason for specifying the lower limit value and each upper limit value of the above-described dilution range and the addition amount range of the above-mentioned organic protective agent is the same as that of the first production method. From the viewpoint of suppressing the sintering of the ITO powder after thermal decomposition of the organic protective agent, the decomposition temperature of the organic protective agent is preferably in the range of 250 to 500 °C. Examples of the alcohol include ethanol, propanol or methanol. Examples of the organic protective agent include palmityl dimethylethylammonium ethyl sulfate, polyvinyl alcohol or octyldimethylethyl ammonium ethyl ester. Sulfate and the like.

向使管的長邊方向鉛直來配置的加熱至250~ 800℃範圍的管式爐的內部,在使作為載氣的氮氣以0.5~5m/s範圍的線速度,較佳以1~3m/s範圍的線速度流通的狀態下,將以醇稀釋且添加有有機保護劑並且分散有銦錫氫氧化物顆粒的漿料利用雙流體噴嘴進行噴霧,與氮氣一同導入於管式爐內。線速度小於下限值時ITO粉末的收穫量減少,若超過上限值,則無法充分加熱進行噴霧的漿料。由此,銦錫氫氧化物顆粒在管式爐內熱分解並燒成,從管式爐的排出口可獲得進行表面改性處理的ITO粉末。 Heating to 250~ to the vertical direction of the tube The inside of the tube furnace in the range of 800 ° C is diluted with alcohol in a state in which nitrogen as a carrier gas is circulated at a linear velocity in the range of 0.5 to 5 m/s, preferably at a linear velocity in the range of 1 to 3 m/s. The slurry to which the organic protective agent was added and in which the indium tin hydroxide particles were dispersed was sprayed by a two-fluid nozzle and introduced into a tube furnace together with nitrogen gas. When the linear velocity is less than the lower limit, the amount of ITO powder to be harvested is reduced, and if it exceeds the upper limit, the slurry to be sprayed cannot be sufficiently heated. Thereby, the indium tin hydroxide particles are thermally decomposed and fired in the tube furnace, and the surface-modified ITO powder can be obtained from the discharge port of the tube furnace.

[實施例] [Examples]

接著,將本發明的實施例與比較例一同進行詳細說明。 Next, an embodiment of the present invention will be described in detail together with a comparative example.

<實施例1> <Example 1> [製造進行表面改性處理的ITO粉末的方法] [Method of Manufacturing Surface-Modified ITO Powder]

在In金屬濃度為24質量%的氯化銦(InCl3)水溶液163g中,添加混合二氯化錫粉末(SnCl2‧2H2O粉末)4g,攪拌至二氯化錫粉末全部溶解之後,將所有的量加入到1000ml的純水中來作為原料溶液。將25質量%的氨(NH3)水溶液向該原料溶液滴入90分鐘。此時將反應溫度調整為80℃,將最終反應溶液的pH調整為8.0。將所生成的銦錫共沉澱氫氧化物即沉澱物通過離子交換水反復進行梯度清洗。在上清液的電阻率達到5000Ω‧cm以上時,去除上述沉澱物的上清液來獲得分散有銦錫氫氧化物 顆粒的黏度較高的漿料。 4 g of mixed tin dichloride powder (SnCl 2 ‧2H 2 O powder) was added to 163 g of an indium chloride (InCl 3 ) aqueous solution having a concentration of In metal of 24% by mass, and the mixture was stirred until all the tin dichloride powder was dissolved. All amounts were added to 1000 ml of pure water as a raw material solution. A 25% by mass aqueous solution of ammonia (NH 3 ) was dropped into the raw material solution for 90 minutes. At this time, the reaction temperature was adjusted to 80 ° C, and the pH of the final reaction solution was adjusted to 8.0. The formed indium tin coprecipitated hydroxide, that is, the precipitate, was repeatedly subjected to gradient washing by ion-exchanged water. When the resistivity of the supernatant reaches 5000 Ω‧cm or more, the supernatant of the above precipitate is removed to obtain a slurry having a high viscosity in which the indium tin hydroxide particles are dispersed.

攪拌該漿料的同時,將該漿料以純水進行稀 釋以使氫氧化物顆粒的濃度成為20質量%之後,添加1.3g的有機保護劑即聚乙烯醇。該有機保護劑的添加量相對於銦錫氫氧化物為1.0質量%。將該漿料在大氣中在110℃乾燥10小時後,在大氣中在700℃燒成2小時,並將聚集體粉碎並分解,從而獲得約70g的ITO粉末。將該70g的ITO粉末放入混合有無水乙醇與蒸餾水的表面處理液(混合比率為,相對於乙醇95質量%,蒸餾水為5質量%)中來將其浸漬後,放入玻璃皿中,在氮氣氣氛下在330℃加熱2小時,從而獲得進行表面改性處理的ITO粉末。 While stirring the slurry, the slurry is diluted with pure water. After the concentration of the hydroxide particles was 20% by mass, 1.3 g of an organic protective agent, that is, polyvinyl alcohol was added. The amount of the organic protective agent added was 1.0% by mass based on the indium tin hydroxide. The slurry was dried in the air at 110 ° C for 10 hours, and then fired at 700 ° C for 2 hours in the atmosphere, and the aggregate was pulverized and decomposed to obtain about 70 g of ITO powder. 70 g of the ITO powder was placed in a surface treatment liquid (mixing ratio of 95% by mass of ethanol and 5% by mass of distilled water) mixed with anhydrous ethanol and distilled water, and then immersed in a glass dish. The ITO powder subjected to the surface modification treatment was obtained by heating at 330 ° C for 2 hours under a nitrogen atmosphere.

[ITO膜的製造] [Manufacture of ITO film]

將該進行表面改性處理的ITO粉末20g放入蒸餾水(0.020g)、二(2-乙基己酸)三乙二醇酯[3G](23.8g)、無水乙醇(2.1g)、磷酸聚酯(1.0g)、2-乙基己酸(2.0g)及2,4-戊烷二酮(0.5g)的混合液中來使其分散。將所製備的分散液以無水乙醇稀釋至固形物即ITO粉末的含量成為10質量%。將該進行稀釋的分散液通過旋塗塗布於石英玻璃板上來成膜,從而獲得厚度為0.2μm的ITO膜。 20 g of the surface-modified ITO powder was placed in distilled water (0.020 g), di(2-ethylhexanoic acid) triethylene glycol ester [3G] (23.8 g), absolute ethanol (2.1 g), and phosphoric acid. A mixture of an ester (1.0 g), 2-ethylhexanoic acid (2.0 g) and 2,4-pentanedione (0.5 g) was dispersed. The prepared dispersion was diluted with absolute ethanol to a solid content, that is, the content of the ITO powder was 10% by mass. The diluted dispersion was applied onto a quartz glass plate by spin coating to form a film, thereby obtaining an ITO film having a thickness of 0.2 μm.

<實施例2> <Example 2>

在In金屬濃度為24質量%的氯化銦(InCl3)水溶液135g中,添加混合二氯化錫粉末(SnCl2‧2H2O粉末)16g,攪拌至二氯化錫粉末全部溶解之後,將所有的量加入到1000ml的純水中來作為原料溶液。將25質量%的氨(NH3)水溶液向該原料溶液滴入90分鐘。此時將反應溫度調整為60℃,將最終反應溶液的pH調整為5.0。將所生成的銦錫共沉澱氫氧化物即沉澱物通過離子交換水反復進行梯度清洗。在上清液的電阻率達到5000Ω‧cm以上時,去除上述沉澱物的上清液,從而獲得分散有銦錫氫氧化物顆粒的黏度較高的漿料。攪拌該漿料的同時,將該漿料以純水進行稀釋以使氫氧化物顆粒的濃度成為15質量%後,添加有機保護劑即棕櫚基二甲基乙基銨乙基硫酸鹽(70質量%)4.5g。該有機保護劑的添加量相對於銦錫氫氧化物為3.0質量%。 16 g of mixed tin dichloride powder (SnCl 2 ‧2H 2 O powder) was added to 135 g of an indium chloride (InCl 3 ) aqueous solution having a concentration of In metal of 24% by mass, and the mixture was stirred until all the tin dichloride powder was dissolved. All amounts were added to 1000 ml of pure water as a raw material solution. A 25% by mass aqueous solution of ammonia (NH 3 ) was dropped into the raw material solution for 90 minutes. At this time, the reaction temperature was adjusted to 60 ° C, and the pH of the final reaction solution was adjusted to 5.0. The formed indium tin coprecipitated hydroxide, that is, the precipitate, was repeatedly subjected to gradient washing by ion-exchanged water. When the resistivity of the supernatant reaches 5000 Ω‧cm or more, the supernatant of the above precipitate is removed, thereby obtaining a slurry having a high viscosity in which the indium tin hydroxide particles are dispersed. While stirring the slurry, the slurry was diluted with pure water so that the concentration of the hydroxide particles became 15% by mass, and then an organic protective agent, palmitoyldimethylethylammonium ethyl sulfate (70 mass) was added. %) 4.5g. The amount of the organic protective agent added was 3.0% by mass based on the indium tin hydroxide.

將該漿料在大氣中在110℃乾燥10小時後, 在大氣中在800℃燒成3小時,並將聚集體粉碎並分解,從而獲得約75g的ITO粉末。將該75g的ITO粉末放入混合有無水乙醇與蒸餾水的表面處理液(混合比率:相對於乙醇95質量%,蒸餾水為5質量%)中來將其浸漬後,放入玻璃皿中在氮氣氣氛下,在330℃加熱2小時,從而獲得進行表面改性處理的ITO粉末。並且,利用該ITO粉末與實施例1同樣地製作出ITO膜。 After the slurry was dried at 110 ° C for 10 hours in the atmosphere, It was baked at 800 ° C for 3 hours in the atmosphere, and the aggregate was pulverized and decomposed to obtain about 75 g of ITO powder. 75 g of ITO powder was placed in a surface treatment liquid (mixing ratio: 95% by mass relative to ethanol and 5% by mass of distilled water) mixed with anhydrous ethanol and distilled water, and then immersed in a glass dish in a nitrogen atmosphere. Next, it was heated at 330 ° C for 2 hours to obtain an ITO powder subjected to surface modification treatment. Further, an ITO film was produced in the same manner as in Example 1 using this ITO powder.

<實施例3> <Example 3>

在In金屬濃度為24質量%的氯化銦(InCl3)水溶液154g中,添加混合二氯化錫粉末(SnCl2‧2H2O粉末)8g,攪拌至二氯化錫粉末全部溶解之後,將所有的量加入到1000ml的純水中來作為原料溶液。將25質量%的氨(NH3)水溶液向該原料溶液滴入90分鐘。此時將反應溫度調整為20℃,將最終反應溶液的pH調整為7.0。將所生成的銦錫共沉澱氫氧化物即沉澱物通過離子交換水反復進行梯度清洗。在上清液的電阻率達到5000Ω‧cm以上時,去除上述沉澱物的上清液,從而獲得分散有銦錫氫氧化物顆粒的黏度較高的漿料。攪拌該漿料的同時,將該漿料以乙醇進行稀釋以使氫氧化物顆粒的濃度成為1.0質量%之後,添加有機保護劑即辛基二甲基乙基銨乙基硫酸鹽(50質量%)10g。該有機保護劑的添加量相對於銦錫氫氧化物為5.0質量%。 8 g of mixed tin dichloride powder (SnCl 2 ‧2H 2 O powder) was added to 154 g of an indium chloride (InCl 3 ) aqueous solution having an In metal concentration of 24% by mass, and the mixture was stirred until all the tin dichloride powder was dissolved. All amounts were added to 1000 ml of pure water as a raw material solution. A 25% by mass aqueous solution of ammonia (NH 3 ) was dropped into the raw material solution for 90 minutes. At this time, the reaction temperature was adjusted to 20 ° C, and the pH of the final reaction solution was adjusted to 7.0. The formed indium tin coprecipitated hydroxide, that is, the precipitate, was repeatedly subjected to gradient washing by ion-exchanged water. When the resistivity of the supernatant reaches 5000 Ω‧cm or more, the supernatant of the above precipitate is removed, thereby obtaining a slurry having a high viscosity in which the indium tin hydroxide particles are dispersed. While stirring the slurry, the slurry was diluted with ethanol so that the concentration of the hydroxide particles became 1.0% by mass, and then an organic protective agent, octyldimethylethylammonium ethyl sulfate (50% by mass) was added. ) 10g. The amount of the organic protective agent added was 5.0% by mass based on the indium tin hydroxide.

向使管的長邊方向鉛直來配置的加熱至500℃ 的管式爐的內部,在使作為載氣的氮氣以1m/s範圍的線速度流通的狀態下,將該漿料利用雙流體噴嘴進行噴霧,並與氮氣一同導入於管式爐內。由此,銦錫氫氧化物顆粒在管式爐內熱分解並燒成,從管式爐的排出口獲得進行表面改性處理的ITO粉末。並且利用該ITO粉末與實施例1同樣地製作出ITO膜。 Heating to 500 ° C in the direction of the long side of the tube In the inside of the tube furnace, the slurry was sprayed by a two-fluid nozzle while flowing nitrogen gas as a carrier gas at a linear velocity of 1 m/s, and introduced into a tube furnace together with nitrogen gas. Thereby, the indium tin hydroxide particles were thermally decomposed and fired in a tube furnace, and the surface-modified ITO powder was obtained from the discharge port of the tube furnace. Further, an ITO film was produced in the same manner as in Example 1 using this ITO powder.

<比較例1> <Comparative Example 1>

在In金屬濃度為24質量%的氯化銦(InCl3)水溶液 245g中,添加混合濃度為55質量%的四氯化錫(SnCl4)水溶液11.5g,製備出InCl3-SnCl4混合溶液。接著,將碳酸氫銨(NH4HCO3)水500g溶解於離子交換水中,製備成總量為1000ml且溫度為70℃。在該水溶液中,將上述InCl3-SnCl4混合溶液的所有的量攪拌的同時滴入20分鐘來生成銦錫共沉澱氫氧化物。以該狀態再攪拌30分鐘。 此時的反應溶液的最終pH為9.0。回收沉澱物即銦錫氫氧化物,以離心機脫水後,加入離子交換水來清洗的同時進行離心過濾,在濾液的電阻率達到5000Ω‧cm以上時結束離心過濾。接著將該沉澱物在100℃乾燥一夜後,在600℃燒成3小時,並將聚集體粉碎並分解,從而獲得75g的ITO粉末。 To 245 g of an indium chloride (InCl 3 ) aqueous solution having a concentration of In metal of 24% by mass, 11.5 g of an aqueous solution of tin tetrachloride (SnCl 4 ) mixed at a concentration of 55% by mass was added to prepare a mixed solution of InCl 3 -SnCl 4 . Next, 500 g of ammonium hydrogencarbonate (NH 4 HCO 3 ) water was dissolved in ion-exchanged water to prepare a total amount of 1000 ml and a temperature of 70 °C. In the aqueous solution, all the amounts of the above-mentioned mixed solution of InCl 3 -SnCl 4 were stirred while being dropped for 20 minutes to form an indium tin coprecipitated hydroxide. Stirring was continued for 30 minutes in this state. The final pH of the reaction solution at this time was 9.0. The indium tin hydroxide is recovered as a precipitate, and after dehydration by a centrifuge, centrifugal filtration is carried out while adding ion-exchanged water to wash, and centrifugation is terminated when the resistivity of the filtrate reaches 5000 Ω·cm or more. Then, the precipitate was dried at 100 ° C overnight, and then fired at 600 ° C for 3 hours, and the aggregate was pulverized and decomposed to obtain 75 g of ITO powder.

將該75g的ITO粉末放入混合有無水乙醇與 蒸餾水的表面處理液(混合比率為,相對於乙醇95質量%,蒸餾水為5質量%)中來將其浸漬後,放入玻璃皿中,在氮氣氣氛下在330℃加熱3小時,從而獲得進行表面改性處理的ITO粉末。並且,利用該ITO粉末與實施例1同樣地製作出ITO膜。 The 75 g of ITO powder was mixed with anhydrous ethanol and The surface treatment liquid of distilled water (mixing ratio: 95% by mass of ethanol and 5% by mass of distilled water) was immersed, placed in a glass dish, and heated at 330 ° C for 3 hours in a nitrogen atmosphere to obtain a progress. Surface modified ITO powder. Further, an ITO film was produced in the same manner as in Example 1 using this ITO powder.

<比較試驗> <Comparative test> [ITO粉末的評價] [Evaluation of ITO Powder]

將對由實施例1~3及比較例1中獲得的各ITO粉末構成的壓坯施加0.98MPa(10kgf/cm2)的壓力時的該壓坯的體積電阻率示於以下表1。利用圖1所示的測定裝置 (Mitsubishi Chemical Analytech Co.,Ltd.製MCP-PD51)測定在該實施例1~3及比較例1中獲得的各ITO粉末的體積電阻率。具體地,在圖1所示的內徑為25mm的缸體1中充填2.00g的ITO粉末,在0.196~29.42MPa(2~300kgf/cm2)的範圍內改變壓力,在同時分別測定在實施例1~3及比較例1中獲得的ITO粉末中10點以上的電阻率與試料厚度。壓力通過未圖示的壓力感測器測定,電阻率以直流四端子法測定。在圖1中,2為ITO粉末的壓坯。 The volume resistivity of the green compact when a pressure of 0.98 MPa (10 kgf/cm 2 ) was applied to the green compact composed of each of the ITO powders obtained in Examples 1 to 3 and Comparative Example 1 is shown in Table 1 below. The volume resistivity of each of the ITO powders obtained in the above Examples 1 to 3 and Comparative Example 1 was measured by a measuring apparatus (MCP-PD51 manufactured by Mitsubishi Chemical Analytech Co., Ltd.) shown in Fig. 1 . Specifically, the inner diameter shown in Figure 1 The cylinder 1 of 25 mm was filled with 2.00 g of ITO powder, and the pressure was changed in the range of 0.196 to 29.42 MPa (2 to 300 kgf/cm 2 ), and the obtained in Examples 1 to 3 and Comparative Example 1 were simultaneously measured. The resistivity of 10 points or more in the ITO powder and the thickness of the sample. The pressure was measured by a pressure sensor (not shown), and the specific resistance was measured by a DC four-terminal method. In Fig. 1, 2 is a green compact of ITO powder.

圖2中示出施加於試料粉末的按照單位面積換算成力的壓力(橫軸)與ITO粉末的壓坯的體積電阻率(縱軸)之間的關係。該關係通過最小平方法來近似於以下乘方的公式(1)。另外,粉末的體積電阻率通過將測定系統附屬的校正係數乘以測定出的值來計算。表1中示出在實施例1~3及比較例1中獲得的近似公式(1)的a及n的值。 FIG. 2 shows the relationship between the pressure (horizontal axis) converted to a force per unit area of the sample powder and the volume resistivity (vertical axis) of the green compact of the ITO powder. This relationship is approximated by the least squares method to the formula (1) of the following power. Further, the volume resistivity of the powder is calculated by multiplying the correction coefficient attached to the measurement system by the measured value. Table 1 shows the values of a and n of the approximate formula (1) obtained in Examples 1 to 3 and Comparative Example 1.

Y=aXn (1) Y=aX n (1)

通過電阻率測定裝置(三菱油化公司製MCP-T400)測定出在實施例1~3及比較例1中獲得的各ITO膜的表面電阻率(Ω/□)。將其結果示於表1。 The surface resistivity (Ω/□) of each of the ITO films obtained in Examples 1 to 3 and Comparative Example 1 was measured by a resistivity measuring device (MCP-T400 manufactured by Mitsubishi Petrochemical Co., Ltd.). The results are shown in Table 1.

<評價> <evaluation>

如從表1可知,對由公式(1)的a為5.00以下且n為-0.500以下的實施例1~3的ITO粉末構成的壓坯施加0.98MPa(10kgf/cm2)的壓力時的該壓坯的體積電阻率為0.500Ω‧cm以下。並且,由這些ITO粉末製成的ITO膜的表面電阻率為1.0×106Ω/□以下。相對於此,對由公式(1)的a為5.00以下但n超過-0.500的比較例1的ITO粉末構成的壓坯施加0.98MPa(10kgf/cm2)的壓力時的該壓坯的體積電阻率超過0.5Ω‧cm。並且,由比較例1的ITO粉末製成的ITO膜的表面電阻率超過了1.0×106Ω/□。以上驗證了具有近似於公式(1)的關係的實施例1~3,降低以塗布方式成膜ITO膜時的電阻率來獲得高導電性。 As can be seen from Table 1, when a pressure of 0.98 MPa (10 kgf/cm 2 ) is applied to the green compact composed of the ITO powders of Examples 1 to 3 in which a of the formula (1) is 5.00 or less and n is -0.500 or less. The volume resistivity of the green compact is 0.500 Ω ‧ cm or less. Further, the surface resistivity of the ITO film made of these ITO powders was 1.0 × 10 6 Ω/□ or less. On the other hand, when the pressure of 0.98 MPa (10 kgf/cm 2 ) was applied to the green compact composed of the ITO powder of Comparative Example 1 in which a of the formula (1) was 5.00 or less but n exceeded -0.500, the volume resistivity of the green compact was applied. The rate is over 0.5 Ω ‧ cm. Further, the surface resistivity of the ITO film made of the ITO powder of Comparative Example 1 exceeded 1.0 × 10 6 Ω/□. As described above, Examples 1 to 3 having a relationship similar to the formula (1) were examined, and the electrical resistivity at the time of film formation of the ITO film by coating was reduced to obtain high conductivity.

Claims (9)

一種ITO粉末,其係藉由在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物,以純水或離子交換水清洗前述沉澱物至上清液的電阻率至少達到5000Ω‧cm,去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而該有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,將表面吸附有前述有機保護劑的銦錫氫氧化物乾燥後,在大氣中在250~800℃的範圍用燒成爐燒成0.5~6小時,將已燒成的ITO粉末的聚集體粉碎,並使該經粉碎的ITO粉末含浸於混合有50~95質量%的無水乙醇與5~50質量%的蒸餾水的表面處理液中,接著在氮氣氣氛下在200~400℃的範圍加熱0.5~5小時,而被表面改性的ITO粉末,其特徵在於,對由前述ITO粉末構成的壓坯施加0.98MPa的壓力時的前述壓坯的體積電阻率為0.50Ω‧cm以下,將對前述壓坯施加0.196~29.42MPa的壓力時的前述壓坯的體積電阻率設為Y且前述壓力設為X時,前述壓力與前述體積電阻率之間的關係,藉由最小平方法近似下述公式(1),在該公式(1)中,a為5.00以下,且n為-0.500 以下,Y=aXn (1)。 An ITO powder obtained by mixing an alkaline aqueous solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin, and washing the precipitate to the upper portion with pure water or ion-exchanged water. The resistivity of the supernatant is at least 5000 Ω ‧ cm, the supernatant of the precipitate is removed to prepare a slurry in which the indium tin hydroxide particles are dispersed, and the slurry from which the supernatant is removed is diluted with water to make the aforementioned After the concentration of the hydroxide particles is in the range of 10 to 30% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring. The organic protective agent is palm dimethyl dimethyl ammonium ethyl sulphate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulphate, and the indium tin hydroxide adsorbing the organic protective agent on the surface is dried. After that, it is fired in a baking furnace for 0.5 to 6 hours in the atmosphere at 250 to 800 ° C, and the aggregate of the fired ITO powder is pulverized, and the pulverized ITO powder is impregnated with 50 to 95. % by mass of absolute ethanol and 5 to 50% by mass of steamed The surface treatment liquid of the distilled water is heated in the range of 200 to 400 ° C for 0.5 to 5 hours in a nitrogen atmosphere, and the surface-modified ITO powder is characterized in that 0.98 is applied to the green compact composed of the ITO powder. The volume resistivity of the green compact at a pressure of MPa is 0.50 Ω ‧ cm or less, and when the pressure of 0.196 to 29.42 MPa is applied to the green compact, the volume resistivity of the green compact is Y and the pressure is X. The relationship between the aforementioned pressure and the volume resistivity is approximated by the least squares method (1), in which a is 5.00 or less, and n is -0.500 or less, Y = aX n (1). 一種如請求項1之ITO粉末的製造方法,其包括如下步驟:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述沉澱物之步驟;去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;乾燥前述漿料之步驟;及燒成前述乾燥的銦錫氧化物來獲得銦錫氧化物之步驟,其特徵在於,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而該有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,將表面吸附有前述有機保護劑的銦錫氫氧化物乾燥後,在前述燒成步驟中、在大氣中250~800℃的範圍用燒成爐燒成0.5~6小時,在前述燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末含浸於混合有50~95質量%的無水乙醇與5~50質量%的蒸餾水的表面處理液 後,在氮氣氣氛下,在200~400℃的範圍加熱0.5~5小時。 A method for producing an ITO powder according to claim 1, comprising the steps of: mixing an aqueous alkaline solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin; a step of washing the precipitate by pure water or ion-exchanged water; a step of removing the supernatant of the precipitate to prepare a slurry in which the indium tin hydroxide particles are dispersed; a step of drying the slurry; and baking the aforementioned dried a step of obtaining indium tin oxide by indium tin oxide, characterized in that in the cleaning step, the resistivity of the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the removal is performed After the slurry of the supernatant liquid is diluted with water so that the concentration of the hydroxide particles is in the range of 10 to 30% by mass, 100% by mass of the hydroxide particles are added to the slurry while stirring. Is an organic protective agent in the range of 0.1 to 5% by mass, and the organic protective agent is palmityl dimethylethyl ammonium ethyl sulfate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulfate, table After the indium tin hydroxide adsorbing the organic protective agent is dried, it is fired in a firing furnace at a temperature of 250 to 800 ° C for 0.5 to 6 hours in the baking step, and is pulverized after the baking step. An aggregate of the fired ITO powder, the immersed ITO powder is impregnated with a surface treatment liquid mixed with 50 to 95% by mass of absolute ethanol and 5 to 50% by mass of distilled water Thereafter, it was heated in the range of 200 to 400 ° C for 0.5 to 5 hours under a nitrogen atmosphere. 一種ITO粉末,其係藉由在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物,以純水或離子交換水清洗前述沉澱物至上清液的電阻率至少達到5000Ω‧cm,去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而該有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,使添加有有機保護劑且分散有銦錫氫氧化物的漿料進行乾燥後,在大氣中以2.45GHz~28GHz的微波在250~800℃的範圍,以在10分鐘以內達到目標溫度的速度升溫,接著藉由在前述目標溫度保持5~120分鐘的範圍進行加熱燒成,將已燒成的ITO粉末的聚集體粉碎,並使該經粉碎的ITO粉末含浸於混合有50~95質量%的無水乙醇與5~50質量%的蒸餾水的表面處理液後,在氮氣氣氛下在200~400℃的範圍加熱0.5~5小時,而被表面改性的ITO粉末,其特徵在於,對由前述ITO粉末構成的壓坯施加0.98MPa的壓力時的前述壓坯的體積電阻率為0.50Ω‧cm以下,將對前述壓坯施加0.196~29.42MPa的壓力時的前述壓坯的體積 電阻率設為Y且前述壓力設為X時,前述壓力與前述體積電阻率之間的關係,藉由最小平方法近似下述公式(1),在該公式(1)中,a為5.00以下,且n為-0.500以下Y=aXn (1)。 An ITO powder obtained by mixing an alkaline aqueous solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin, and washing the precipitate to the upper portion with pure water or ion-exchanged water. The resistivity of the supernatant is at least 5000 Ω ‧ cm, the supernatant of the precipitate is removed to prepare a slurry in which the indium tin hydroxide particles are dispersed, and the slurry from which the supernatant is removed is diluted with water to make the aforementioned After the concentration of the hydroxide particles is in the range of 10 to 30% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring. The organic protective agent is palm dimethyl dimethyl ammonium ethyl sulphate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulphate, which is added with an organic protective agent and is dispersed with indium tin hydroxide. After the slurry is dried, it is heated in the atmosphere at a temperature of 250 to 800 ° C in a microwave of 2.45 GHz to 28 GHz in a range of 50 to 800 ° C, and then maintained at a target temperature of 5 to 120 minutes. Heated and burned The aggregate of the fired ITO powder is pulverized, and the pulverized ITO powder is impregnated with a surface treatment liquid in which 50 to 95% by mass of absolute ethanol and 5 to 50% by mass of distilled water are mixed, in a nitrogen atmosphere. The surface-modified ITO powder is heated in the range of 200 to 400 ° C for 0.5 to 5 hours, and is characterized in that the volume resistivity of the green compact is applied to a green compact composed of the ITO powder at a pressure of 0.98 MPa. When the volume resistivity of the green compact is set to Y and the pressure is X, the relationship between the pressure and the volume resistivity is 0.50 Ω ‧ cm or less when the pressure of 0.196 to 29.42 MPa is applied to the green compact. The following formula (1) is approximated by the least square method, in which a is 5.00 or less, and n is -0.500 or less Y = aX n (1). 一種如請求項3之ITO粉末的製造方法,其包括如下步驟:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述沉澱物之步驟;去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;乾燥前述漿料之步驟;及燒成前述經乾燥的銦錫氧化物來獲得銦錫氧化物之步驟,其特徵在於,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以水進行稀釋以使前述氫氧化物顆粒的濃度成為10~30質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而前述有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,在前述乾燥步驟中,對添加有前述有機保護劑且分散有銦錫氫氧化物的漿料進行乾燥, 在前述燒成步驟中,在大氣中以2.45GHz~28GHz的微波在250~800℃的範圍,以在10分鐘以內達到目標溫度的速度升溫後,藉由在前述目標溫度保持5~120分鐘的範圍進行加熱燒成,在前述燒成步驟之後,粉碎已燒成的ITO粉末的聚集體,將該粉碎的ITO粉末含浸於混合有50~95質量%的無水乙醇與5~50質量%的蒸餾水的表面處理液後,在氮氣氣氛下,在200~400℃的範圍加熱0.5~5小時。 A method for producing an ITO powder according to claim 3, which comprises the steps of: mixing an aqueous alkaline solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin; a step of washing the precipitate by pure water or ion-exchanged water; a step of removing the supernatant of the precipitate to prepare a slurry in which the indium tin hydroxide particles are dispersed; a step of drying the slurry; and baking the foregoing dried The indium tin oxide is used to obtain indium tin oxide, characterized in that in the cleaning step, the resistivity of the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry After the slurry of the supernatant liquid is diluted with water so that the concentration of the hydroxide particles is in the range of 10 to 30% by mass, 100 masses of the hydroxide particles are added to the slurry while stirring. % is an organic protective agent in the range of 0.1 to 5% by mass, and the organic protective agent is palm dimethyl dimethyl ammonium ethyl sulfate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulfate. The drying step, the organic protective agent is added and dispersed indium tin hydroxide slurry was dried, In the calcination step, the microwave is heated from 2.45 GHz to 28 GHz in the atmosphere at a temperature of 250 to 800 ° C, and the temperature is raised to a target temperature within 10 minutes, and then maintained at the target temperature for 5 to 120 minutes. The range is heated and fired, and after the calcination step, the aggregate of the fired ITO powder is pulverized, and the pulverized ITO powder is impregnated with 50 to 95% by mass of absolute ethanol and 5 to 50% by mass of distilled water. After the surface treatment liquid, it is heated in the range of 200 to 400 ° C for 0.5 to 5 hours under a nitrogen atmosphere. 一種ITO粉末,其係藉由在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物,以純水或離子交換水清洗前述沉澱物至上清液的電阻率至少達到5000Ω‧cm,去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料,將去除了前述上清液的漿料以醇進行稀釋以使前述氫氧化物顆粒的濃度成為1~5質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而前述有機保護劑為棕櫚基二甲基乙基銨乙基硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,向加熱至250~800℃的範圍的管式爐的內部,在使氮氣以0.5~5m/s的範圍的線速度流通的狀態下,將以前述醇稀釋且添加有前述有機保護劑並且分散有銦錫氫氧化物顆粒的漿料進行噴霧,從而在前述管式爐內熱分解並燒成銦錫氫氧化物顆粒而被表面改性的ITO粉末,其特徵在於, 對由前述ITO粉末構成的壓坯施加0.98MPa的壓力時的前述壓坯的體積電阻率為0.50Ω‧cm以下,將對前述壓坯施加0.196~29.42MPa的壓力時的前述壓坯的體積電阻率設為Y且前述壓力設為X時,前述壓力與前述體積電阻率之間的關係,藉由最小平方法近似下述公式(1),在該公式(1)中,a為5.00以下,且n為-0.500以下Y=aXn (1)。 An ITO powder obtained by mixing an alkaline aqueous solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin, and washing the precipitate to the upper portion with pure water or ion-exchanged water. The resistivity of the supernatant is at least 5000 Ω ‧ cm, the supernatant of the precipitate is removed to prepare a slurry in which the indium tin hydroxide particles are dispersed, and the slurry from which the supernatant is removed is diluted with alcohol to make the aforementioned After the concentration of the hydroxide particles is in the range of 1 to 5% by mass, an organic protective agent in an amount of 0.1 to 5% by mass based on 100% by mass of the hydroxide particles is added to the slurry while stirring. The organic protective agent is palm dimethyl dimethyl ammonium ethyl sulphate, polyvinyl alcohol or octyl dimethyl ethyl ammonium ethyl sulphate, and is heated inside the tube furnace in the range of 250 to 800 ° C In a state where nitrogen gas is allowed to flow at a linear velocity in the range of 0.5 to 5 m/s, a slurry diluted with the alcohol and added with the organic protective agent and dispersed with indium tin hydroxide particles is sprayed, thereby Thermal decomposition in a tube furnace The ITO powder which is surface-modified with indium tin hydroxide particles is characterized in that the volume resistivity of the green compact when a pressure of 0.98 MPa is applied to the green compact composed of the ITO powder is 0.50 Ω·cm or less. When the volume resistivity of the green compact when the pressure of 0.196 to 29.42 MPa is applied to the green compact is Y and the pressure is X, the relationship between the pressure and the volume resistivity is approximated by the least squares method. In the formula (1), a is 5.00 or less, and n is -0.500 or less Y = aX n (1). 一種如請求項5之ITO粉末的製造方法,其包括如下步驟:在3價銦化合物和2價錫化合物的混合水溶液中混合鹼性水溶液來生成銦與錫的共沉澱氫氧化物之步驟;以純水或離子交換水清洗前述沉澱物之步驟;去除前述沉澱物的上清液來製備分散有銦錫氫氧化物顆粒的漿料之步驟;及燒成分散有前述銦錫氫氧化物的漿料來獲得銦錫氧化物之步驟,其特徵在於,在前述清洗步驟中,清洗至前述上清液的電阻率至少達到5000Ω‧cm,在前述漿料的製備步驟中,將去除了前述上清液的漿料以醇進行稀釋以使前述氫氧化物顆粒的濃度成為1~5質量%的範圍後,在攪拌的同時向前述漿料中添加相對於前述氫氧化物顆粒100質量%為0.1~5質量%的範圍的有機保護劑,而前述有機保護劑為棕櫚基二甲基乙基銨乙基 硫酸鹽、聚乙烯醇或辛基二甲基乙基銨乙基硫酸鹽,在前述燒成步驟中,向加熱至250~800℃的範圍的管式爐的內部,在使氮氣以0.5~5m/s的範圍的線速度流通的狀態下,將以前述醇稀釋且添加有前述有機保護劑並且分散有銦錫氫氧化物顆粒的漿料進行噴霧,從而在前述管式爐內熱分解並燒成銦錫氫氧化物顆粒來獲得銦錫氧化物顆粒。 A method for producing an ITO powder according to claim 5, which comprises the steps of: mixing an aqueous alkaline solution in a mixed aqueous solution of a trivalent indium compound and a divalent tin compound to form a coprecipitated hydroxide of indium and tin; a step of washing the precipitate by pure water or ion-exchanged water; a step of removing the supernatant of the precipitate to prepare a slurry in which indium tin hydroxide particles are dispersed; and baking a slurry in which the indium tin hydroxide is dispersed The step of obtaining indium tin oxide, characterized in that in the cleaning step, the resistivity of the supernatant is at least 5000 Ω ‧ cm, and in the preparation step of the slurry, the supernatant is removed The slurry of the liquid is diluted with an alcohol so that the concentration of the hydroxide particles is in the range of 1 to 5% by mass, and then 100% by mass of the hydroxide particles are added to the slurry while stirring. An organic protective agent in the range of 5 mass%, and the aforementioned organic protective agent is palmityldimethylethylammonium ethyl Sulfate, polyvinyl alcohol or octyldimethylethylammonium ethyl sulfate, in the above-mentioned baking step, to the inside of the tube furnace heated to a range of 250 to 800 ° C, and nitrogen gas is made 0.5 to 5 m In a state in which the linear velocity of the range of /s is in a state in which the slurry is diluted with the aforementioned alcohol and the organic protective agent is added and the indium tin hydroxide particles are dispersed, the mixture is thermally decomposed and fired in the tube furnace. Indium tin hydroxide particles are used to obtain indium tin oxide particles. 如請求項5或6之製造方法,其中,前述醇為乙醇、甲醇或丙醇。 The production method of claim 5 or 6, wherein the aforementioned alcohol is ethanol, methanol or propanol. 一種製造分散液的方法,其特徵為,將如請求項1、3或5中任一項之ITO粉末或通過如請求項2、4或6中任一項之方法製造出的ITO粉末分散於溶劑中來製造分散液。 A method of producing a dispersion, characterized in that the ITO powder of any one of claims 1, 3 or 5 or the ITO powder produced by the method of any one of claims 2, 4 or 6 is dispersed in The dispersion is prepared in a solvent. 一種製造ITO膜的方法,其特徵為,由如請求項8之分散液製造ITO膜。 A method of producing an ITO film, characterized in that an ITO film is produced from the dispersion liquid of claim 8.
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