TWI563589B - Tray, substrate processing apparatus using the same, and manufacturing method of tray - Google Patents

Tray, substrate processing apparatus using the same, and manufacturing method of tray

Info

Publication number
TWI563589B
TWI563589B TW099141107A TW99141107A TWI563589B TW I563589 B TWI563589 B TW I563589B TW 099141107 A TW099141107 A TW 099141107A TW 99141107 A TW99141107 A TW 99141107A TW I563589 B TWI563589 B TW I563589B
Authority
TW
Taiwan
Prior art keywords
tray
manufacturing
processing apparatus
same
substrate processing
Prior art date
Application number
TW099141107A
Other languages
English (en)
Other versions
TW201131686A (en
Inventor
Jong Yong Choi
Original Assignee
Jusung Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090115888A external-priority patent/KR101669913B1/ko
Priority claimed from KR1020100114260A external-priority patent/KR101691066B1/ko
Application filed by Jusung Eng Co Ltd filed Critical Jusung Eng Co Ltd
Publication of TW201131686A publication Critical patent/TW201131686A/zh
Application granted granted Critical
Publication of TWI563589B publication Critical patent/TWI563589B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
TW099141107A 2009-11-27 2010-11-26 Tray, substrate processing apparatus using the same, and manufacturing method of tray TWI563589B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090115888A KR101669913B1 (ko) 2009-11-27 2009-11-27 트레이 및 이를 사용하는 기판처리장치
KR1020100114260A KR101691066B1 (ko) 2010-11-17 2010-11-17 트레이와 이를 이용한 기판 처리 장치, 및 트레이의 제조 방법

Publications (2)

Publication Number Publication Date
TW201131686A TW201131686A (en) 2011-09-16
TWI563589B true TWI563589B (en) 2016-12-21

Family

ID=44067119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099141107A TWI563589B (en) 2009-11-27 2010-11-26 Tray, substrate processing apparatus using the same, and manufacturing method of tray

Country Status (2)

Country Link
TW (1) TWI563589B (zh)
WO (1) WO2011065776A2 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101796475B1 (ko) * 2011-07-15 2017-11-14 (주)코미코 기판 적재용 트레이
WO2013012210A2 (ko) * 2011-07-15 2013-01-24 주식회사 코미코 기판 적재용 트레이
KR20160017333A (ko) * 2014-08-04 2016-02-16 피에스케이 주식회사 공정 트레이 및 이를 이용한 처리 장치
KR102412341B1 (ko) * 2019-06-25 2022-06-23 피코순 오와이 기판 후면 보호

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030094493A (ko) * 2002-06-04 2003-12-12 삼성전자주식회사 기판을 지지하기 위한 척
JP2006100297A (ja) * 2004-09-28 2006-04-13 Renesas Technology Corp 半導体装置の搬送方法および半導体装置の製造方法
JP2006179687A (ja) * 2004-12-22 2006-07-06 Murata Mach Ltd 枚葉搬送用トレイおよび搬送システム
KR20060083410A (ko) * 2003-08-01 2006-07-20 에스지엘 카본 악티엔게젤샤프트 반도체 제조시 웨이퍼를 지지하는 홀더
TW200731448A (en) * 2006-02-15 2007-08-16 guo-dong Chen Manufacturing method of protection layer of wafer tray
KR100922496B1 (ko) * 2005-10-04 2009-10-20 주식회사 코미코 엠보싱 패턴을 갖는 기판 지지대 및 이의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9300389A (nl) * 1993-03-04 1994-10-03 Xycarb Bv Substraatdrager.
JP4110880B2 (ja) * 2002-08-22 2008-07-02 凸版印刷株式会社 大型ガラス基板用トレイ形カセット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030094493A (ko) * 2002-06-04 2003-12-12 삼성전자주식회사 기판을 지지하기 위한 척
KR20060083410A (ko) * 2003-08-01 2006-07-20 에스지엘 카본 악티엔게젤샤프트 반도체 제조시 웨이퍼를 지지하는 홀더
JP2006100297A (ja) * 2004-09-28 2006-04-13 Renesas Technology Corp 半導体装置の搬送方法および半導体装置の製造方法
JP2006179687A (ja) * 2004-12-22 2006-07-06 Murata Mach Ltd 枚葉搬送用トレイおよび搬送システム
KR100922496B1 (ko) * 2005-10-04 2009-10-20 주식회사 코미코 엠보싱 패턴을 갖는 기판 지지대 및 이의 제조 방법
TW200731448A (en) * 2006-02-15 2007-08-16 guo-dong Chen Manufacturing method of protection layer of wafer tray

Also Published As

Publication number Publication date
WO2011065776A3 (ko) 2011-11-03
WO2011065776A2 (ko) 2011-06-03
TW201131686A (en) 2011-09-16

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