TWI563588B - - Google Patents

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Publication number
TWI563588B
TWI563588B TW103145594A TW103145594A TWI563588B TW I563588 B TWI563588 B TW I563588B TW 103145594 A TW103145594 A TW 103145594A TW 103145594 A TW103145594 A TW 103145594A TW I563588 B TWI563588 B TW I563588B
Authority
TW
Taiwan
Application number
TW103145594A
Other versions
TW201616595A (zh
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Filing date
Publication date
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Publication of TW201616595A publication Critical patent/TW201616595A/zh
Application granted granted Critical
Publication of TWI563588B publication Critical patent/TWI563588B/zh

Links

TW103145594A 2014-10-17 2014-12-25 真空鎖系統及基片處理方法 TW201616595A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410553794.4A CN105575848B (zh) 2014-10-17 2014-10-17 真空锁系统及基片处理方法

Publications (2)

Publication Number Publication Date
TW201616595A TW201616595A (zh) 2016-05-01
TWI563588B true TWI563588B (zh) 2016-12-21

Family

ID=55885845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145594A TW201616595A (zh) 2014-10-17 2014-12-25 真空鎖系統及基片處理方法

Country Status (2)

Country Link
CN (1) CN105575848B (zh)
TW (1) TW201616595A (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611054B (zh) * 2016-07-12 2020-02-14 北京北方华创微电子装备有限公司 反应腔室
CN108470704B (zh) * 2017-02-23 2021-01-29 北京北方华创微电子装备有限公司 传片腔室及半导体加工设备
JP7330181B2 (ja) * 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
US11515128B2 (en) * 2018-08-28 2022-11-29 Lam Research Corporation Confinement ring with extended life
CN112725747B (zh) * 2019-10-29 2022-10-18 中国电子科技集团公司第四十八研究所 一种磁控溅射机台
CN112779510B (zh) * 2019-11-11 2022-11-11 中国电子科技集团公司第四十八研究所 一种磁控溅射镀膜设备
CN113035752B (zh) * 2021-03-05 2022-11-11 上海广川科技有限公司 负载锁定装置及基片传片方法
CN114695222B (zh) * 2022-06-02 2022-08-16 江苏邑文微电子科技有限公司 晶片传输系统和方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014411A1 (en) * 2001-08-08 2003-02-20 Lam Research Corporation Rapid cycle chamber having a top vent with nitrogen purge
JP2003077975A (ja) * 2001-08-31 2003-03-14 Anelva Corp マルチチャンバースパッタ処理装置
WO2005098934A1 (ja) * 2004-03-30 2005-10-20 Tokyo Electron Limited 半導体処理装置及び方法
TW200949899A (en) * 2006-01-27 2009-12-01 Advanced Micro Fab Equip Inc Semiconductor processing chamber
WO2011035041A2 (en) * 2009-09-16 2011-03-24 Applied Materials, Inc. Substrate transfer mechanism with preheating features

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4540953B2 (ja) * 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 基板加熱装置及びマルチチャンバー基板処理装置
DE102005039452B4 (de) * 2005-08-18 2007-08-09 Asys Automatic Systems Gmbh & Co. Kg Übergabeeinrichtung in Handhabungs- oder Bearbeitungsanlagen für großflächige Substrate
JP5108557B2 (ja) * 2008-02-27 2012-12-26 東京エレクトロン株式会社 ロードロック装置および基板冷却方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014411A1 (en) * 2001-08-08 2003-02-20 Lam Research Corporation Rapid cycle chamber having a top vent with nitrogen purge
JP2003077975A (ja) * 2001-08-31 2003-03-14 Anelva Corp マルチチャンバースパッタ処理装置
WO2005098934A1 (ja) * 2004-03-30 2005-10-20 Tokyo Electron Limited 半導体処理装置及び方法
TW200949899A (en) * 2006-01-27 2009-12-01 Advanced Micro Fab Equip Inc Semiconductor processing chamber
WO2011035041A2 (en) * 2009-09-16 2011-03-24 Applied Materials, Inc. Substrate transfer mechanism with preheating features

Also Published As

Publication number Publication date
CN105575848A (zh) 2016-05-11
TW201616595A (zh) 2016-05-01
CN105575848B (zh) 2018-08-28

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