TWI563508B - - Google Patents

Info

Publication number
TWI563508B
TWI563508B TW104111935A TW104111935A TWI563508B TW I563508 B TWI563508 B TW I563508B TW 104111935 A TW104111935 A TW 104111935A TW 104111935 A TW104111935 A TW 104111935A TW I563508 B TWI563508 B TW I563508B
Authority
TW
Taiwan
Application number
TW104111935A
Other languages
Chinese (zh)
Other versions
TW201637018A (en
Inventor
xin-zhang Lin
wen-qian Huang
ya-ting Fan
jia-hao Dai
Dong-Yu Ye
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW104111935A priority Critical patent/TW201637018A/en
Publication of TW201637018A publication Critical patent/TW201637018A/en
Application granted granted Critical
Publication of TWI563508B publication Critical patent/TWI563508B/zh

Links

TW104111935A 2015-04-14 2015-04-14 Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof TW201637018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW104111935A TW201637018A (en) 2015-04-14 2015-04-14 Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104111935A TW201637018A (en) 2015-04-14 2015-04-14 Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof

Publications (2)

Publication Number Publication Date
TW201637018A TW201637018A (en) 2016-10-16
TWI563508B true TWI563508B (en) 2016-12-21

Family

ID=57847707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111935A TW201637018A (en) 2015-04-14 2015-04-14 Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof

Country Status (1)

Country Link
TW (1) TW201637018A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690061B (en) * 2019-04-02 2020-04-01 億而得微電子股份有限公司 Single gate multiple writing to non-volatile memory and operation method thereof
TWI707344B (en) * 2019-10-08 2020-10-11 億而得微電子股份有限公司 Single gate multi-write non-volatile memory array and operation method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI640084B (en) * 2017-08-16 2018-11-01 億而得微電子股份有限公司 Electronic write-erase type rewritable read-only memory with low voltage difference and operation method thereof
TWI695489B (en) * 2019-03-07 2020-06-01 億而得微電子股份有限公司 Low-voltage fast erasing method of electronic writing erasing type rewritable read-only memory
CN111739572A (en) * 2019-03-25 2020-10-02 亿而得微电子股份有限公司 Low-voltage quick erasing method for electronic writing erasable read-only memory
CN111899777A (en) * 2019-05-05 2020-11-06 亿而得微电子股份有限公司 Single-gate multi-write non-volatile memory and operation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics
US20030137001A1 (en) * 1999-12-17 2003-07-24 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable Flash EEPROM
US20110070707A1 (en) * 2009-09-18 2011-03-24 Eon Silicon Solution Inc. Method of manufacturing nor flash memory
CN102446770A (en) * 2011-10-12 2012-05-09 上海华力微电子有限公司 Method and structure for enhancing write-in speed of floating body dynamic random memory cell
US20130147045A1 (en) * 2010-04-20 2013-06-13 Micron Technology, Inc. Flash Memory Having Multi-Level Architecture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030137001A1 (en) * 1999-12-17 2003-07-24 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable Flash EEPROM
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics
US20110070707A1 (en) * 2009-09-18 2011-03-24 Eon Silicon Solution Inc. Method of manufacturing nor flash memory
US20130147045A1 (en) * 2010-04-20 2013-06-13 Micron Technology, Inc. Flash Memory Having Multi-Level Architecture
CN102446770A (en) * 2011-10-12 2012-05-09 上海华力微电子有限公司 Method and structure for enhancing write-in speed of floating body dynamic random memory cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690061B (en) * 2019-04-02 2020-04-01 億而得微電子股份有限公司 Single gate multiple writing to non-volatile memory and operation method thereof
TWI707344B (en) * 2019-10-08 2020-10-11 億而得微電子股份有限公司 Single gate multi-write non-volatile memory array and operation method thereof

Also Published As

Publication number Publication date
TW201637018A (en) 2016-10-16

Similar Documents

Publication Publication Date Title
BR112017027180A2 (en)
TWI563508B (en)
BR112016023275A2 (en)
BR0007834B1 (en)
BR0002874B1 (en)
CN303107541S (en)
CN303132253S (en)
BR0313344B1 (en)
BR0010150B1 (en)
BR0009994B1 (en)
BR0009942B1 (en)
BR0009761B1 (en)
BR0009757B1 (en)
BR0009717B1 (en)
BR0009649B1 (en)
BR0009373B1 (en)
BR0009349B1 (en)
BR0009182B1 (en)
BR0008874B1 (en)
BR0008789B1 (en)
BR0008719B1 (en)
BR0008604B1 (en)
BR0008158B1 (en)
BR0008132B1 (en)
BR0003928B1 (en)