TWI563508B - - Google Patents
Info
- Publication number
- TWI563508B TWI563508B TW104111935A TW104111935A TWI563508B TW I563508 B TWI563508 B TW I563508B TW 104111935 A TW104111935 A TW 104111935A TW 104111935 A TW104111935 A TW 104111935A TW I563508 B TWI563508 B TW I563508B
- Authority
- TW
- Taiwan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104111935A TW201637018A (en) | 2015-04-14 | 2015-04-14 | Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104111935A TW201637018A (en) | 2015-04-14 | 2015-04-14 | Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201637018A TW201637018A (en) | 2016-10-16 |
TWI563508B true TWI563508B (en) | 2016-12-21 |
Family
ID=57847707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104111935A TW201637018A (en) | 2015-04-14 | 2015-04-14 | Electrically-Erasable Programmable Read-Only Memory of reducing voltage difference and operation method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW201637018A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI690061B (en) * | 2019-04-02 | 2020-04-01 | 億而得微電子股份有限公司 | Single gate multiple writing to non-volatile memory and operation method thereof |
TWI707344B (en) * | 2019-10-08 | 2020-10-11 | 億而得微電子股份有限公司 | Single gate multi-write non-volatile memory array and operation method thereof |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI640084B (en) * | 2017-08-16 | 2018-11-01 | 億而得微電子股份有限公司 | Electronic write-erase type rewritable read-only memory with low voltage difference and operation method thereof |
TWI695489B (en) * | 2019-03-07 | 2020-06-01 | 億而得微電子股份有限公司 | Low-voltage fast erasing method of electronic writing erasing type rewritable read-only memory |
CN111739572A (en) * | 2019-03-25 | 2020-10-02 | 亿而得微电子股份有限公司 | Low-voltage quick erasing method for electronic writing erasable read-only memory |
CN111899777A (en) * | 2019-05-05 | 2020-11-06 | 亿而得微电子股份有限公司 | Single-gate multi-write non-volatile memory and operation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284603B1 (en) * | 2000-07-12 | 2001-09-04 | Chartered Semiconductor Manufacturing Inc. | Flash memory cell structure with improved channel punch-through characteristics |
US20030137001A1 (en) * | 1999-12-17 | 2003-07-24 | Chartered Semiconductor Manufacturing Ltd. | Low voltage programmable and erasable Flash EEPROM |
US20110070707A1 (en) * | 2009-09-18 | 2011-03-24 | Eon Silicon Solution Inc. | Method of manufacturing nor flash memory |
CN102446770A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method and structure for enhancing write-in speed of floating body dynamic random memory cell |
US20130147045A1 (en) * | 2010-04-20 | 2013-06-13 | Micron Technology, Inc. | Flash Memory Having Multi-Level Architecture |
-
2015
- 2015-04-14 TW TW104111935A patent/TW201637018A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030137001A1 (en) * | 1999-12-17 | 2003-07-24 | Chartered Semiconductor Manufacturing Ltd. | Low voltage programmable and erasable Flash EEPROM |
US6284603B1 (en) * | 2000-07-12 | 2001-09-04 | Chartered Semiconductor Manufacturing Inc. | Flash memory cell structure with improved channel punch-through characteristics |
US20110070707A1 (en) * | 2009-09-18 | 2011-03-24 | Eon Silicon Solution Inc. | Method of manufacturing nor flash memory |
US20130147045A1 (en) * | 2010-04-20 | 2013-06-13 | Micron Technology, Inc. | Flash Memory Having Multi-Level Architecture |
CN102446770A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method and structure for enhancing write-in speed of floating body dynamic random memory cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI690061B (en) * | 2019-04-02 | 2020-04-01 | 億而得微電子股份有限公司 | Single gate multiple writing to non-volatile memory and operation method thereof |
TWI707344B (en) * | 2019-10-08 | 2020-10-11 | 億而得微電子股份有限公司 | Single gate multi-write non-volatile memory array and operation method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201637018A (en) | 2016-10-16 |