TWI563132B - Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method - Google Patents

Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method

Info

Publication number
TWI563132B
TWI563132B TW104127652A TW104127652A TWI563132B TW I563132 B TWI563132 B TW I563132B TW 104127652 A TW104127652 A TW 104127652A TW 104127652 A TW104127652 A TW 104127652A TW I563132 B TWI563132 B TW I563132B
Authority
TW
Taiwan
Prior art keywords
single crystal
supporting
during crystallization
growing
crystal according
Prior art date
Application number
TW104127652A
Other languages
English (en)
Other versions
TW201610244A (zh
Inventor
Kurt Niederer
Helmut Teroerde
Josef Berger
Goetz Meisterernst
Frank Muemmler
Simon Zitzelsberger
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of TW201610244A publication Critical patent/TW201610244A/zh
Application granted granted Critical
Publication of TWI563132B publication Critical patent/TWI563132B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Chemistry (AREA)
TW104127652A 2014-09-03 2015-08-25 Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method TWI563132B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014217605.0A DE102014217605A1 (de) 2014-09-03 2014-09-03 Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren

Publications (2)

Publication Number Publication Date
TW201610244A TW201610244A (zh) 2016-03-16
TWI563132B true TWI563132B (en) 2016-12-21

Family

ID=53886982

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104127652A TWI563132B (en) 2014-09-03 2015-08-25 Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method

Country Status (8)

Country Link
US (1) US10094042B2 (zh)
EP (1) EP2993258B1 (zh)
JP (1) JP6407115B2 (zh)
KR (1) KR101792337B1 (zh)
CN (1) CN105386120B (zh)
DE (1) DE102014217605A1 (zh)
DK (1) DK2993258T3 (zh)
TW (1) TWI563132B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604440B2 (ja) 2016-08-10 2019-11-13 株式会社Ｓｕｍｃｏ 単結晶の製造方法及び装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140571A (en) * 1976-11-16 1979-02-20 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Crucible-free zone refining of semiconductor material including annular support member
US4886647A (en) * 1987-04-27 1989-12-12 Shin-Etsu Handotai Co., Ltd. Supporting apparatus for semiconductor crystal rod

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996096A (en) 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Method for crucible-free zone melting of semiconductor crystal rods
DE2455173C3 (de) 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
DE2652100C2 (de) * 1976-11-16 1981-11-26 Joachim 3004 Isernhagen Ruhnau Elektrisch beheizte Arbeitsplatz-Fußwärmeplatte
EP0449260B1 (en) * 1990-03-30 1995-08-30 Shin-Etsu Handotai Company Limited Apparatus for producing czochralski-grown single crystals
JP2535470B2 (ja) 1992-01-21 1996-09-18 信越半導体株式会社 半導体結晶棒支持装置
JP5296992B2 (ja) 2007-01-31 2013-09-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
CN202246977U (zh) * 2011-08-08 2012-05-30 中国电子科技集团公司第四十六研究所 一种用于区熔单晶生长用的晶体支撑装置
CN202968740U (zh) * 2012-12-11 2013-06-05 有研半导体材料股份有限公司 一种区熔炉单晶夹持系统

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140571A (en) * 1976-11-16 1979-02-20 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Crucible-free zone refining of semiconductor material including annular support member
US4886647A (en) * 1987-04-27 1989-12-12 Shin-Etsu Handotai Co., Ltd. Supporting apparatus for semiconductor crystal rod

Also Published As

Publication number Publication date
JP6407115B2 (ja) 2018-10-17
DE102014217605A1 (de) 2016-03-03
DK2993258T3 (en) 2017-01-09
CN105386120A (zh) 2016-03-09
US10094042B2 (en) 2018-10-09
TW201610244A (zh) 2016-03-16
CN105386120B (zh) 2018-07-17
KR101792337B1 (ko) 2017-10-31
EP2993258B1 (de) 2016-10-05
US20160060786A1 (en) 2016-03-03
KR20160028372A (ko) 2016-03-11
JP2016052983A (ja) 2016-04-14
EP2993258A1 (de) 2016-03-09

Similar Documents

Publication Publication Date Title
PL2881499T3 (pl) Sposób hodowli kryształu węgliku krzemu
SG11201703228XA (en) Method to grow thin epitaxial films at low temperature
IL289910B1 (en) A method for preparing allulose crystals
EP3192898A4 (en) Method for producing silicon carbide crystals and crystal production device
HK1245278A1 (zh) 製備索非布韋晶型6的方法
EP3333287A4 (en) METHOD FOR PRODUCING A SIC-EINKRISTALLS
PL3166390T3 (pl) Nośnik z usuwalną boczną strukturą wsporczą umieszczoną na nim i sposób uprawy roślin przy użyciu tego nośnika
HUE057295T2 (hu) Eljárás difenilmetán sorozatba tartozó di- és poliaminok elõállítására
HK1251218A1 (zh) 製造恩雜魯胺晶形的程序
SG11201700361QA (en) Process for the purification of poliovirus from cell cultures
HUE057242T2 (hu) Eljárás difenilmetán sorozatba tartozó di- és poliaminok elõállítására
EP2933359A4 (en) METHOD FOR GROWING A MONOCRYSTAL OF BETA-GA2O3
IL238487B (en) A high strength single crystal superalloy
HUE058168T2 (hu) Eljárás difenilmetán sorozatba tartozó di- és poliamidok elõállítására
EP2990509A4 (en) METHOD FOR GROWING ß-Ga2O3-BASED SINGLE CRYSTAL
HUP1400140A2 (en) New process for preparing high purity prostaglandins
HUE037918T2 (hu) Eljárás a difenilmetán sorozat di- és poliaminjainak elõállítására
EP3078768A4 (en) Single crystal growing apparatus
EP3207034A4 (en) Anhydrous crystalline form of s-equol
EP3190087A4 (en) Method for producing crystalline silicotitanate
PT3110832T (pt) Plantas com rendimento aumentado e método para produção das referidas plantas
SG11201608860YA (en) Process for immobilization of a lipase
EP3011083A4 (en) Method of growing germanium crystals
EP3112503A4 (en) Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals
EP2955252A4 (en) PROCESS FOR THE PREPARATION OF SOLAR QUALITY SILICON MONOCRYSTAL BY MEANS OF A ZONE FUSION CZOCHRALSKI PROCESS