TWI562184B - Apparatus for temperature control of ion source - Google Patents

Apparatus for temperature control of ion source

Info

Publication number
TWI562184B
TWI562184B TW104120406A TW104120406A TWI562184B TW I562184 B TWI562184 B TW I562184B TW 104120406 A TW104120406 A TW 104120406A TW 104120406 A TW104120406 A TW 104120406A TW I562184 B TWI562184 B TW I562184B
Authority
TW
Taiwan
Prior art keywords
temperature control
ion source
ion
source
temperature
Prior art date
Application number
TW104120406A
Other languages
English (en)
Other versions
TW201612941A (en
Inventor
Craig R Chaney
William Davis Lee
Neil J Bassom
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW201612941A publication Critical patent/TW201612941A/zh
Application granted granted Critical
Publication of TWI562184B publication Critical patent/TWI562184B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
TW104120406A 2014-07-02 2015-06-25 Apparatus for temperature control of ion source TWI562184B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/322,357 US9287079B2 (en) 2014-07-02 2014-07-02 Apparatus for dynamic temperature control of an ion source

Publications (2)

Publication Number Publication Date
TW201612941A TW201612941A (en) 2016-04-01
TWI562184B true TWI562184B (en) 2016-12-11

Family

ID=55017487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120406A TWI562184B (en) 2014-07-02 2015-06-25 Apparatus for temperature control of ion source

Country Status (6)

Country Link
US (1) US9287079B2 (zh)
JP (2) JP6515118B2 (zh)
KR (1) KR101729991B1 (zh)
CN (1) CN106575593B (zh)
TW (1) TWI562184B (zh)
WO (1) WO2016003618A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10347457B1 (en) * 2017-12-19 2019-07-09 Varian Semiconductor Equipment Associates, Inc. Dynamic temperature control of an ion source
US11404254B2 (en) 2018-09-19 2022-08-02 Varian Semiconductor Equipment Associates, Inc. Insertable target holder for solid dopant materials
US11170973B2 (en) * 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US10957509B1 (en) 2019-11-07 2021-03-23 Applied Materials, Inc. Insertable target holder for improved stability and performance for solid dopant materials
US11665786B2 (en) * 2019-12-05 2023-05-30 Applied Materials, Inc. Solid state heater and method of manufacture
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200607024A (en) * 2004-08-04 2006-02-16 Samsung Electronics Co Ltd Ion sources and ion implanters and methods including the same
US7365339B2 (en) * 2005-05-17 2008-04-29 Nissin Ion Equipment Co., Ltd. Ion source
US20120132802A1 (en) * 2009-06-30 2012-05-31 Noriaki Arai Gas field ionization ion source apparatus and scanning charged particle microscope equipped with same
CN102832094A (zh) * 2011-06-15 2012-12-19 日新离子机器株式会社 离子源和离子注入装置
TW201415515A (zh) * 2012-10-15 2014-04-16 Varian Semiconductor Equipment 具有擋廉組件之離子源以及離子植入機

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157471A (en) * 1978-05-10 1979-06-05 United States Department Of Energy High temperature ion source for an on-line isotope separator
US4791273A (en) * 1987-05-15 1988-12-13 Varian Associates, Inc. Vaporizer system for ion source
JPS6410946U (zh) * 1987-07-09 1989-01-20
JP2539896Y2 (ja) * 1991-10-21 1997-07-02 日新電機株式会社 熱シ−ルド
US5523646A (en) * 1994-08-17 1996-06-04 Tucciarone; John F. An arc chamber assembly for use in an ionization source
US6639223B2 (en) * 2001-05-11 2003-10-28 Varian Semiconductor Equipment Associates, Inc. Gaseous ion source feed for oxygen ion implantation
GB0131097D0 (en) 2001-12-31 2002-02-13 Applied Materials Inc Ion sources
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7365346B2 (en) * 2004-12-29 2008-04-29 Matsushita Electric Industrial Co., Ltd. Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
WO2007102224A1 (ja) * 2006-03-09 2007-09-13 Shimadzu Corporation 質量分析装置
US20100156198A1 (en) 2008-12-22 2010-06-24 Alexander Cooper Shield layer plus refrigerated backside cooling for planar motors
US8183542B2 (en) 2010-04-05 2012-05-22 Varion Semiconductor Equipment Associates, Inc. Temperature controlled ion source
WO2013090123A1 (en) 2011-12-12 2013-06-20 Nikon Corporation Thermal plate for environment and temperature control of motors used to move stages in lithography tools
JP2014003046A (ja) * 2012-06-15 2014-01-09 Hitachi Ltd イオン注入方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200607024A (en) * 2004-08-04 2006-02-16 Samsung Electronics Co Ltd Ion sources and ion implanters and methods including the same
US7365339B2 (en) * 2005-05-17 2008-04-29 Nissin Ion Equipment Co., Ltd. Ion source
US20120132802A1 (en) * 2009-06-30 2012-05-31 Noriaki Arai Gas field ionization ion source apparatus and scanning charged particle microscope equipped with same
CN102832094A (zh) * 2011-06-15 2012-12-19 日新离子机器株式会社 离子源和离子注入装置
TW201415515A (zh) * 2012-10-15 2014-04-16 Varian Semiconductor Equipment 具有擋廉組件之離子源以及離子植入機

Also Published As

Publication number Publication date
JP6664023B2 (ja) 2020-03-13
KR20170018078A (ko) 2017-02-15
US20160005564A1 (en) 2016-01-07
JP2017523566A (ja) 2017-08-17
US9287079B2 (en) 2016-03-15
CN106575593A (zh) 2017-04-19
WO2016003618A1 (en) 2016-01-07
JP2019145517A (ja) 2019-08-29
JP6515118B2 (ja) 2019-05-15
KR101729991B1 (ko) 2017-04-25
TW201612941A (en) 2016-04-01
CN106575593B (zh) 2018-09-28

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