TWI561928B - Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film - Google Patents

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film

Info

Publication number
TWI561928B
TWI561928B TW101106305A TW101106305A TWI561928B TW I561928 B TWI561928 B TW I561928B TW 101106305 A TW101106305 A TW 101106305A TW 101106305 A TW101106305 A TW 101106305A TW I561928 B TWI561928 B TW I561928B
Authority
TW
Taiwan
Prior art keywords
sensitive
radiation
resin composition
forming method
resist film
Prior art date
Application number
TW101106305A
Other languages
English (en)
Other versions
TW201241549A (en
Inventor
Hidenori Takahashi
Shuhei Yamaguchi
Shohei Kataoka
Michihiro Shirakawa
Fumihiro Yoshino
Shoichi Saitoh
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW201241549A publication Critical patent/TW201241549A/zh
Application granted granted Critical
Publication of TWI561928B publication Critical patent/TWI561928B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101106305A 2011-02-28 2012-02-24 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film TWI561928B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011043321 2011-02-28
JP2011177257 2011-08-12
JP2012035633A JP5846957B2 (ja) 2011-02-28 2012-02-21 パターン形成方法、感活性光線性又は感放射線性樹脂組成物及びレジスト膜

Publications (2)

Publication Number Publication Date
TW201241549A TW201241549A (en) 2012-10-16
TWI561928B true TWI561928B (en) 2016-12-11

Family

ID=48133822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101106305A TWI561928B (en) 2011-02-28 2012-02-24 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film

Country Status (9)

Country Link
US (1) US20140011134A1 (zh)
EP (1) EP2681623B1 (zh)
JP (2) JP5846957B2 (zh)
KR (1) KR101742117B1 (zh)
CN (1) CN103562795B (zh)
IL (1) IL228135B (zh)
SG (1) SG192982A1 (zh)
TW (1) TWI561928B (zh)
WO (1) WO2012118168A1 (zh)

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JP6002705B2 (ja) * 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
WO2015013293A1 (en) 2013-07-22 2015-01-29 The Regents Of The University Of California Device, system and method for facilitating breathing via simulation of limb movement
JP6646990B2 (ja) * 2014-10-02 2020-02-14 東京応化工業株式会社 レジストパターン形成方法
DE102017213330A1 (de) * 2017-08-02 2019-02-07 Dr. Johannes Heidenhain Gmbh Abtastplatte für eine optische Positionsmesseinrichtung
JP7221308B2 (ja) * 2019-01-28 2023-02-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

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JP2007304545A (ja) * 2005-09-13 2007-11-22 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008058878A (ja) * 2006-09-04 2008-03-13 Fujifilm Corp ポジ型レジスト組成物、該ポジ型レジスト組成物に用いられる樹脂、該樹脂の合成に用いられる化合物及び該ポジ型レジスト組成物を用いたパターン形成方法
JP2009025707A (ja) * 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP2010197689A (ja) * 2009-02-25 2010-09-09 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2010141444A1 (en) * 2009-06-01 2010-12-09 Fujifilm Electronic Materials U.S.A., Inc. Chemically amplified positive photoresist composition

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JP4644457B2 (ja) * 2003-09-10 2011-03-02 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
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JPWO2011158687A1 (ja) * 2010-06-14 2013-08-19 Jsr株式会社 パターン形成方法及び感放射線性樹脂組成物
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JP5655563B2 (ja) * 2010-12-28 2015-01-21 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
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JP2001215689A (ja) * 2000-02-04 2001-08-10 Jsr Corp 感放射線性樹脂組成物
JP2007304545A (ja) * 2005-09-13 2007-11-22 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007272194A (ja) * 2006-01-24 2007-10-18 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2008058878A (ja) * 2006-09-04 2008-03-13 Fujifilm Corp ポジ型レジスト組成物、該ポジ型レジスト組成物に用いられる樹脂、該樹脂の合成に用いられる化合物及び該ポジ型レジスト組成物を用いたパターン形成方法
JP2009025707A (ja) * 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP2010197689A (ja) * 2009-02-25 2010-09-09 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2010141444A1 (en) * 2009-06-01 2010-12-09 Fujifilm Electronic Materials U.S.A., Inc. Chemically amplified positive photoresist composition

Also Published As

Publication number Publication date
SG192982A1 (en) 2013-09-30
CN103562795A (zh) 2014-02-05
EP2681623A1 (en) 2014-01-08
CN103562795B (zh) 2016-08-31
WO2012118168A1 (en) 2012-09-07
JP2016006510A (ja) 2016-01-14
EP2681623A4 (en) 2015-05-06
EP2681623B1 (en) 2019-07-10
KR101742117B1 (ko) 2017-05-31
US20140011134A1 (en) 2014-01-09
JP2013057923A (ja) 2013-03-28
TW201241549A (en) 2012-10-16
IL228135B (en) 2018-03-29
JP5846957B2 (ja) 2016-01-20
KR20140007880A (ko) 2014-01-20

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