TWI561919B - Ordering block copolymers - Google Patents

Ordering block copolymers

Info

Publication number
TWI561919B
TWI561919B TW104108158A TW104108158A TWI561919B TW I561919 B TWI561919 B TW I561919B TW 104108158 A TW104108158 A TW 104108158A TW 104108158 A TW104108158 A TW 104108158A TW I561919 B TWI561919 B TW I561919B
Authority
TW
Taiwan
Prior art keywords
block copolymers
ordering block
ordering
copolymers
block
Prior art date
Application number
TW104108158A
Other languages
English (en)
Other versions
TW201600929A (zh
Inventor
Carlton Grant Willson
Christopher John Ellison
Michael Maher
Christopher M Bates
Dustin Janes
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Publication of TW201600929A publication Critical patent/TW201600929A/zh
Application granted granted Critical
Publication of TWI561919B publication Critical patent/TWI561919B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C09D153/005—Modified block copolymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW104108158A 2014-03-15 2015-03-13 Ordering block copolymers TWI561919B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201461953836P 2014-03-15 2014-03-15

Publications (2)

Publication Number Publication Date
TW201600929A TW201600929A (zh) 2016-01-01
TWI561919B true TWI561919B (en) 2016-12-11

Family

ID=52727472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104108158A TWI561919B (en) 2014-03-15 2015-03-13 Ordering block copolymers

Country Status (6)

Country Link
US (2) US9557640B2 (zh)
JP (1) JP6650879B2 (zh)
KR (1) KR20160133511A (zh)
CN (1) CN106462055A (zh)
TW (1) TWI561919B (zh)
WO (1) WO2015142641A1 (zh)

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BR112015029548B1 (pt) * 2013-06-27 2021-06-01 Intel Corporation Método de fabricação e substrato de circuito integrado
WO2016080972A1 (en) * 2014-11-18 2016-05-26 Seagate Technology Llc Methods and apparatuses for directed self-assembly
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
JP6039028B1 (ja) * 2015-09-11 2016-12-07 株式会社東芝 自己組織化材料及びパターン形成方法
US9910355B2 (en) * 2016-07-29 2018-03-06 Rohm And Haas Electronic Materials Llc Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom
US10755942B2 (en) * 2016-11-02 2020-08-25 Massachusetts Institute Of Technology Method of forming topcoat for patterning
FR3074180B1 (fr) * 2017-11-24 2021-01-01 Arkema France Procede de controle de la planeite d'un empilement polymerique
FR3074179B1 (fr) * 2017-11-24 2021-01-01 Arkema France Procede de controle de la planeite d'un empilement polymerique
AU2019275675A1 (en) * 2018-06-29 2020-01-16 Illumina Cambridge Limited Flow cells
FR3105793B1 (fr) * 2019-12-31 2023-11-17 Arkema France Composition prepolymere destinee a former une couche de contraste et procede de structuration d’un materiau d’interface
FR3105786A1 (fr) * 2019-12-31 2021-07-02 Arkema France Procédé de nanostructuration d’un substrat

Citations (4)

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US5545509A (en) * 1992-11-24 1996-08-13 International Business Machines Corporation Photoresist composition with photosensitive base generator
TW200949446A (en) * 2008-03-07 2009-12-01 Fujifilm Corp Photomask material, photomask and method of producing photomask
US20110147984A1 (en) * 2009-12-18 2011-06-23 Joy Cheng Methods of directed self-assembly, and layered structures formed therefrom
TW201319148A (zh) * 2011-09-23 2013-05-16 Az Electronic Materials Usa 用於導向自組裝嵌段共聚物之中性層組合物及其方法

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US8083953B2 (en) * 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US7790350B2 (en) * 2007-07-30 2010-09-07 International Business Machines Corporation Method and materials for patterning a neutral surface
US7989026B2 (en) * 2008-01-12 2011-08-02 International Business Machines Corporation Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films
JP2010184371A (ja) * 2009-02-10 2010-08-26 Canon Inc 印刷装置及び印刷方法
JP6035017B2 (ja) * 2010-10-04 2016-11-30 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
US9314819B2 (en) * 2012-02-10 2016-04-19 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
WO2013119832A1 (en) * 2012-02-10 2013-08-15 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
JP6118573B2 (ja) * 2012-03-14 2017-04-19 東京応化工業株式会社 下地剤、ブロックコポリマーを含む層のパターン形成方法
JP5642731B2 (ja) * 2012-04-27 2014-12-17 信越化学工業株式会社 パターン形成方法
JP5710546B2 (ja) * 2012-04-27 2015-04-30 信越化学工業株式会社 パターン形成方法
US20140065379A1 (en) 2012-08-31 2014-03-06 Wisconsin Alumni Research Foundation Topcoat surfaces for directing the assembly of block copolymer films on chemically patterned surfaces
JP5752655B2 (ja) * 2012-09-10 2015-07-22 株式会社東芝 パターン形成方法
JP6027912B2 (ja) * 2013-02-22 2016-11-16 東京応化工業株式会社 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料
CN104749905B (zh) * 2013-12-31 2018-02-13 罗门哈斯电子材料有限公司 定向自组装图案形成方法和组合物
CN104788598A (zh) * 2013-12-31 2015-07-22 陶氏环球技术有限公司 可交联聚合物和底层组合物
US20150303055A1 (en) * 2014-04-16 2015-10-22 GlobalFoundries, Inc. Methods for fabricating integrated circuits including surface treating for directed self-assembly
US9556353B2 (en) * 2014-10-29 2017-01-31 International Business Machines Corporation Orientation control materials for block copolymers used in directed self-assembly applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545509A (en) * 1992-11-24 1996-08-13 International Business Machines Corporation Photoresist composition with photosensitive base generator
TW200949446A (en) * 2008-03-07 2009-12-01 Fujifilm Corp Photomask material, photomask and method of producing photomask
US20110147984A1 (en) * 2009-12-18 2011-06-23 Joy Cheng Methods of directed self-assembly, and layered structures formed therefrom
TW201319148A (zh) * 2011-09-23 2013-05-16 Az Electronic Materials Usa 用於導向自組裝嵌段共聚物之中性層組合物及其方法

Also Published As

Publication number Publication date
US20170139326A1 (en) 2017-05-18
TW201600929A (zh) 2016-01-01
US9823568B2 (en) 2017-11-21
JP2017514671A (ja) 2017-06-08
KR20160133511A (ko) 2016-11-22
JP6650879B2 (ja) 2020-02-19
CN106462055A (zh) 2017-02-22
US20150261090A1 (en) 2015-09-17
WO2015142641A8 (en) 2017-02-23
US9557640B2 (en) 2017-01-31
WO2015142641A1 (en) 2015-09-24

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