TWI561664B - Process kit shield for improved particle reduction - Google Patents

Process kit shield for improved particle reduction

Info

Publication number
TWI561664B
TWI561664B TW100116890A TW100116890A TWI561664B TW I561664 B TWI561664 B TW I561664B TW 100116890 A TW100116890 A TW 100116890A TW 100116890 A TW100116890 A TW 100116890A TW I561664 B TWI561664 B TW I561664B
Authority
TW
Taiwan
Prior art keywords
process kit
improved particle
particle reduction
kit shield
shield
Prior art date
Application number
TW100116890A
Other languages
English (en)
Chinese (zh)
Other versions
TW201217569A (en
Inventor
Muhammad Rasheed
Rongjun Wang
Zhendong Liu
Xinyu Fu
Xianmin Tang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201217569A publication Critical patent/TW201217569A/zh
Application granted granted Critical
Publication of TWI561664B publication Critical patent/TWI561664B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW100116890A 2010-05-14 2011-05-13 Process kit shield for improved particle reduction TWI561664B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33485810P 2010-05-14 2010-05-14
US41705010P 2010-11-24 2010-11-24
US13/106,392 US9834840B2 (en) 2010-05-14 2011-05-12 Process kit shield for improved particle reduction

Publications (2)

Publication Number Publication Date
TW201217569A TW201217569A (en) 2012-05-01
TWI561664B true TWI561664B (en) 2016-12-11

Family

ID=44910799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100116890A TWI561664B (en) 2010-05-14 2011-05-13 Process kit shield for improved particle reduction

Country Status (6)

Country Link
US (2) US9834840B2 (ru)
JP (1) JP5931055B2 (ru)
KR (2) KR101952727B1 (ru)
CN (1) CN102985588B (ru)
TW (1) TWI561664B (ru)
WO (1) WO2011143527A2 (ru)

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CN103987873B (zh) * 2011-12-12 2016-10-05 佳能安内华股份有限公司 溅镀装置、靶材及护罩
JP5860063B2 (ja) * 2011-12-22 2016-02-16 キヤノンアネルバ株式会社 基板処理装置
US9695502B2 (en) 2012-03-30 2017-07-04 Applied Materials, Inc. Process kit with plasma-limiting gap
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
US9633824B2 (en) 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
US9472443B2 (en) * 2013-03-14 2016-10-18 Applied Materials, Inc. Selectively groundable cover ring for substrate process chambers
KR102240762B1 (ko) * 2013-03-14 2021-04-14 어플라이드 머티어리얼스, 인코포레이티드 선택적으로 접지되고 그리고 이동 가능한 프로세스 키트 링을 사용하여 기판을 프로세싱하기 위한 방법 및 장치
US9644262B2 (en) * 2013-03-15 2017-05-09 Applied Materials, Inc. Self-centering process shield
US10096455B2 (en) 2013-09-17 2018-10-09 Applied Materials, Inc. Extended dark space shield
CN104878363B (zh) * 2014-02-28 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 机械卡盘及等离子体加工设备
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
SG10202004443YA (en) * 2015-11-24 2020-06-29 Applied Materials Inc Pre-coated shield for use in vhf-rf pvd chambers
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2018094024A1 (en) * 2016-11-19 2018-05-24 Applied Materials, Inc. Process kit having a floating shadow ring
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
US10763091B2 (en) * 2017-08-18 2020-09-01 Applied Materials, Inc. Physical vapor deposition chamber particle reduction apparatus and methods
KR102024137B1 (ko) * 2017-09-20 2019-09-23 주식회사 조인솔루션 스퍼터용 석영 히터 및 이를 구비한 스퍼터링 장치
JP7466460B2 (ja) 2018-01-29 2024-04-12 アプライド マテリアルズ インコーポレイテッド Ｐｖｄプロセスにおける粒子低減のためのプロセスキットの形状寸法
CN108385070A (zh) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 防着板以及溅射装置
KR20200135550A (ko) * 2018-04-18 2020-12-02 어플라이드 머티어리얼스, 인코포레이티드 자기-중심조정 피쳐를 갖는 2-피스 셔터 디스크 조립체
TWI788618B (zh) * 2019-01-25 2023-01-01 美商應用材料股份有限公司 物理氣相沉積靶材組件
US11114288B2 (en) * 2019-02-08 2021-09-07 Applied Materials, Inc. Physical vapor deposition apparatus
KR102278078B1 (ko) * 2019-10-17 2021-07-19 세메스 주식회사 기판 반송 장치 및 기판 처리 장치
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
US20220178021A1 (en) * 2020-12-08 2022-06-09 Skytech Co., Ltd. Wafer fixing mechanism and wafer pre-cleaning machine using the wafer fixing mechanism
US20230128611A1 (en) * 2021-10-22 2023-04-27 Applied Materials, Inc. Apparatus for Temperature Control in a Substrate Processing Chamber

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US20100055298A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Process kit shields and methods of use thereof

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US20020108571A1 (en) * 1997-03-17 2002-08-15 Russell Black Heated and cooled vacuum chamber shield
US20020166762A1 (en) * 2001-01-05 2002-11-14 Hixson Robert B. Physical vapor deposition apparatus with modified shutter disk and cover ring
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Also Published As

Publication number Publication date
TW201217569A (en) 2012-05-01
KR20130111948A (ko) 2013-10-11
KR101866933B1 (ko) 2018-06-14
WO2011143527A2 (en) 2011-11-17
CN102985588B (zh) 2016-08-03
JP5931055B2 (ja) 2016-06-08
US9834840B2 (en) 2017-12-05
US20180087147A1 (en) 2018-03-29
JP2013528706A (ja) 2013-07-11
KR101952727B1 (ko) 2019-02-27
KR20180058841A (ko) 2018-06-01
WO2011143527A3 (en) 2012-03-01
CN102985588A (zh) 2013-03-20
US10718049B2 (en) 2020-07-21
US20110278165A1 (en) 2011-11-17

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