TWI561663B - - Google Patents

Info

Publication number
TWI561663B
TWI561663B TW103109917A TW103109917A TWI561663B TW I561663 B TWI561663 B TW I561663B TW 103109917 A TW103109917 A TW 103109917A TW 103109917 A TW103109917 A TW 103109917A TW I561663 B TWI561663 B TW I561663B
Authority
TW
Taiwan
Application number
TW103109917A
Other versions
TW201508079A (zh
Inventor
Hideki Ito
Hidekazu Tsuchida
Isaho Kamata
Masahiko Ito
Masami Naito
Hiroaki Fujibayashi
Ayumu Adachi
Koichi Nishikawa
Original Assignee
Nuflare Technology Inc
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc, Denso Corp filed Critical Nuflare Technology Inc
Publication of TW201508079A publication Critical patent/TW201508079A/zh
Application granted granted Critical
Publication of TWI561663B publication Critical patent/TWI561663B/zh

Links

Classifications

    • H10P72/0434—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW103109917A 2013-03-25 2014-03-17 成膜裝置及成膜方法 TW201508079A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013062150A JP6026333B2 (ja) 2013-03-25 2013-03-25 成膜装置および成膜方法

Publications (2)

Publication Number Publication Date
TW201508079A TW201508079A (zh) 2015-03-01
TWI561663B true TWI561663B (zh) 2016-12-11

Family

ID=51569431

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103109917A TW201508079A (zh) 2013-03-25 2014-03-17 成膜裝置及成膜方法

Country Status (4)

Country Link
US (1) US9570337B2 (zh)
JP (1) JP6026333B2 (zh)
KR (1) KR101610637B1 (zh)
TW (1) TW201508079A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
CN104681402B (zh) * 2015-03-16 2018-03-16 京东方科技集团股份有限公司 基板加热装置和基板加热方法
DE112016004430T5 (de) * 2015-09-29 2018-07-05 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung eines Siliziumkarbid-Epitaxiesubstrats, Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung und Vorrichtung zur Herstellung eines Siliziumkarbid-Epitaxiesubstrats
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
JP6967403B2 (ja) * 2017-08-30 2021-11-17 株式会社ニューフレアテクノロジー 気相成長方法
US11735415B2 (en) * 2018-08-21 2023-08-22 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
US12020927B2 (en) 2018-08-21 2024-06-25 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP7102478B2 (ja) 2020-09-24 2022-07-19 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム及び基板処理方法
US12211673B2 (en) * 2020-10-22 2025-01-28 Applied Materials, Inc. Processing chamber deposition confinement
JP7711643B2 (ja) * 2022-07-13 2025-07-23 株式会社デンソー 半導体ウェハの製造装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5884009A (en) * 1997-08-07 1999-03-16 Tokyo Electron Limited Substrate treatment system
US20080219824A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Multiple substrate transfer robot
US20090314209A1 (en) * 2006-03-14 2009-12-24 Lg Innotek Co., Ltd. Susceptor and semiconductor manufacturing apparatus including the same
US20110206866A1 (en) * 2010-02-19 2011-08-25 Kunihiko Suzuki Deposition apparatus and method
US20120048180A1 (en) * 2010-08-27 2012-03-01 Hideki Ito Film-forming manufacturing apparatus and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148639A (ja) 1994-11-24 1996-06-07 Hitachi Cable Ltd フィルムの貼付方法及び貼付装置
JP3636962B2 (ja) * 2000-04-10 2005-04-06 三菱住友シリコン株式会社 半導体製造方法
JP4621241B2 (ja) 2002-03-18 2011-01-26 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
WO2005098922A1 (ja) * 2004-03-31 2005-10-20 Hitachi Kokusai Electric Inc. 半導体装置の製造方法
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
JP5358201B2 (ja) * 2009-01-26 2013-12-04 株式会社ニューフレアテクノロジー 成膜方法
US9084298B2 (en) * 2010-02-26 2015-07-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus including shielding unit for suppressing leakage of magnetic field
US20120244684A1 (en) * 2011-03-24 2012-09-27 Kunihiko Suzuki Film-forming apparatus and method
JP6000676B2 (ja) 2011-06-21 2016-10-05 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP5851149B2 (ja) * 2011-08-08 2016-02-03 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5884009A (en) * 1997-08-07 1999-03-16 Tokyo Electron Limited Substrate treatment system
US20090314209A1 (en) * 2006-03-14 2009-12-24 Lg Innotek Co., Ltd. Susceptor and semiconductor manufacturing apparatus including the same
US20080219824A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Multiple substrate transfer robot
US20110206866A1 (en) * 2010-02-19 2011-08-25 Kunihiko Suzuki Deposition apparatus and method
US20120048180A1 (en) * 2010-08-27 2012-03-01 Hideki Ito Film-forming manufacturing apparatus and method

Also Published As

Publication number Publication date
KR20140116818A (ko) 2014-10-06
US9570337B2 (en) 2017-02-14
US20140287539A1 (en) 2014-09-25
TW201508079A (zh) 2015-03-01
JP2014187282A (ja) 2014-10-02
KR101610637B1 (ko) 2016-04-08
JP6026333B2 (ja) 2016-11-16

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