TWI560883B - Trench type power semiconductor device, wafer structure and fabrication method thereof - Google Patents

Trench type power semiconductor device, wafer structure and fabrication method thereof

Info

Publication number
TWI560883B
TWI560883B TW103116571A TW103116571A TWI560883B TW I560883 B TWI560883 B TW I560883B TW 103116571 A TW103116571 A TW 103116571A TW 103116571 A TW103116571 A TW 103116571A TW I560883 B TWI560883 B TW I560883B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
power semiconductor
type power
fabrication method
wafer structure
Prior art date
Application number
TW103116571A
Other languages
Chinese (zh)
Other versions
TW201543686A (en
Inventor
Shian Hau Liao
Guo Liang Yang
Original Assignee
Sinopower Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sinopower Semiconductor Inc filed Critical Sinopower Semiconductor Inc
Priority to TW103116571A priority Critical patent/TWI560883B/en
Publication of TW201543686A publication Critical patent/TW201543686A/en
Application granted granted Critical
Publication of TWI560883B publication Critical patent/TWI560883B/en

Links

TW103116571A 2014-05-09 2014-05-09 Trench type power semiconductor device, wafer structure and fabrication method thereof TWI560883B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103116571A TWI560883B (en) 2014-05-09 2014-05-09 Trench type power semiconductor device, wafer structure and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103116571A TWI560883B (en) 2014-05-09 2014-05-09 Trench type power semiconductor device, wafer structure and fabrication method thereof

Publications (2)

Publication Number Publication Date
TW201543686A TW201543686A (en) 2015-11-16
TWI560883B true TWI560883B (en) 2016-12-01

Family

ID=55221011

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103116571A TWI560883B (en) 2014-05-09 2014-05-09 Trench type power semiconductor device, wafer structure and fabrication method thereof

Country Status (1)

Country Link
TW (1) TWI560883B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606519B (en) 2016-09-09 2017-11-21 帥群微電子股份有限公司 Trench power semiconductor device and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1757117A (en) * 2003-03-05 2006-04-05 先进模拟科技公司 Trench power MOSFET with planarized gate bus
CN102034712A (en) * 2009-09-23 2011-04-27 万国半导体股份有限公司 Direct contact in trench with three-mask shield gate process
CN102254826A (en) * 2010-05-18 2011-11-23 万国半导体股份有限公司 Bi-grid oxide groove mosfet and three or four mask process with passage stop groove
TW201336083A (en) * 2012-02-28 2013-09-01 Alpha & Omega Semiconductor Method for making gate-oxide with step-graded thickness in trenched DMOS device for reduced gate-to-drain capacitance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1757117A (en) * 2003-03-05 2006-04-05 先进模拟科技公司 Trench power MOSFET with planarized gate bus
CN102034712A (en) * 2009-09-23 2011-04-27 万国半导体股份有限公司 Direct contact in trench with three-mask shield gate process
CN102254826A (en) * 2010-05-18 2011-11-23 万国半导体股份有限公司 Bi-grid oxide groove mosfet and three or four mask process with passage stop groove
TW201336083A (en) * 2012-02-28 2013-09-01 Alpha & Omega Semiconductor Method for making gate-oxide with step-graded thickness in trenched DMOS device for reduced gate-to-drain capacitance

Also Published As

Publication number Publication date
TW201543686A (en) 2015-11-16

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