TWI560807B - - Google Patents
Info
- Publication number
- TWI560807B TWI560807B TW104122756A TW104122756A TWI560807B TW I560807 B TWI560807 B TW I560807B TW 104122756 A TW104122756 A TW 104122756A TW 104122756 A TW104122756 A TW 104122756A TW I560807 B TWI560807 B TW I560807B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345037.8A CN105448697B (zh) | 2014-07-18 | 2014-07-18 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201604993A TW201604993A (zh) | 2016-02-01 |
| TWI560807B true TWI560807B (fr) | 2016-12-01 |
Family
ID=55558755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104122756A TW201604993A (zh) | 2014-07-18 | 2015-07-14 | 高深寬比結構的蝕刻方法及mems裝置的製作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105448697B (fr) |
| TW (1) | TW201604993A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890277B (zh) * | 2018-09-07 | 2022-05-10 | 无锡华润上华科技有限公司 | 沟槽式金属氧化物半导体肖特基势垒晶体管制备方法 |
| CN111252730A (zh) * | 2020-01-22 | 2020-06-09 | 成都工业学院 | 一种非对称半导体结构的制备方法 |
| CN113745101A (zh) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | 一种用于高深宽比器件刻蚀的方法及机台 |
| CN113200511A (zh) * | 2021-04-06 | 2021-08-03 | 杭州士兰集昕微电子有限公司 | 一种微机电传感器的背腔的制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071822A (en) * | 1998-06-08 | 2000-06-06 | Plasma-Therm, Inc. | Etching process for producing substantially undercut free silicon on insulator structures |
| TW396450B (en) * | 1997-12-05 | 2000-07-01 | Applied Materials Inc | New etch process for forming high aspect ratio trenches in silicon |
| TW531833B (en) * | 2002-02-22 | 2003-05-11 | Nanya Technology Corp | Manufacturing method for shallow trench isolation with high aspect ratio |
| TW200416939A (en) * | 2003-02-20 | 2004-09-01 | Taiwan Semiconductor Mfg | Etching method for forming deep trench |
| TW200627538A (en) * | 2005-01-19 | 2006-08-01 | Promos Technologies Inc | Method for preparing structure with high aspect ratio |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101097821B1 (ko) * | 2007-04-11 | 2011-12-22 | 가부시키가이샤 알박 | 드라이 에칭방법 |
| EP2399863A1 (fr) * | 2010-06-22 | 2011-12-28 | Valtion Teknillinen Tutkimuskeskus | Structure de substrat multicouche et son procédé de fabrication |
| CN103594361A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| CN103811408B (zh) * | 2012-11-08 | 2016-08-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔刻蚀方法 |
| CN103456620B (zh) * | 2013-09-11 | 2016-03-02 | 中微半导体设备(上海)有限公司 | 半导体结构的形成方法 |
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2014
- 2014-07-18 CN CN201410345037.8A patent/CN105448697B/zh active Active
-
2015
- 2015-07-14 TW TW104122756A patent/TW201604993A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW396450B (en) * | 1997-12-05 | 2000-07-01 | Applied Materials Inc | New etch process for forming high aspect ratio trenches in silicon |
| US6071822A (en) * | 1998-06-08 | 2000-06-06 | Plasma-Therm, Inc. | Etching process for producing substantially undercut free silicon on insulator structures |
| TW531833B (en) * | 2002-02-22 | 2003-05-11 | Nanya Technology Corp | Manufacturing method for shallow trench isolation with high aspect ratio |
| TW200416939A (en) * | 2003-02-20 | 2004-09-01 | Taiwan Semiconductor Mfg | Etching method for forming deep trench |
| TW200627538A (en) * | 2005-01-19 | 2006-08-01 | Promos Technologies Inc | Method for preparing structure with high aspect ratio |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105448697B (zh) | 2018-05-01 |
| CN105448697A (zh) | 2016-03-30 |
| TW201604993A (zh) | 2016-02-01 |