TWI559635B - 用於極端紫外光（ｅｕｖ）光源之驅動雷射輸送系統 - Google Patents
用於極端紫外光（ｅｕｖ）光源之驅動雷射輸送系統 Download PDFInfo
- Publication number
- TWI559635B TWI559635B TW101106944A TW101106944A TWI559635B TW I559635 B TWI559635 B TW I559635B TW 101106944 A TW101106944 A TW 101106944A TW 101106944 A TW101106944 A TW 101106944A TW I559635 B TWI559635 B TW I559635B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- beam path
- euv
- light source
- path
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims description 85
- 230000010287 polarization Effects 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 28
- 239000013077 target material Substances 0.000 claims description 25
- 238000005286 illumination Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 11
- 230000002708 enhancing effect Effects 0.000 claims 4
- 230000003321 amplification Effects 0.000 description 28
- 238000003199 nucleic acid amplification method Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 230000036278 prepulse Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 SnBr 4 Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
- H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
- H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/050,198 US8604452B2 (en) | 2011-03-17 | 2011-03-17 | Drive laser delivery systems for EUV light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201244305A TW201244305A (en) | 2012-11-01 |
| TWI559635B true TWI559635B (zh) | 2016-11-21 |
Family
ID=46827736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101106944A TWI559635B (zh) | 2011-03-17 | 2012-03-02 | 用於極端紫外光（ｅｕｖ）光源之驅動雷射輸送系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8604452B2 (enrdf_load_stackoverflow) |
| EP (1) | EP2686649A4 (enrdf_load_stackoverflow) |
| JP (1) | JP5759023B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101963673B1 (enrdf_load_stackoverflow) |
| TW (1) | TWI559635B (enrdf_load_stackoverflow) |
| WO (1) | WO2012125287A2 (enrdf_load_stackoverflow) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2004837A (en) * | 2009-07-09 | 2011-01-10 | Asml Netherlands Bv | Radiation system and lithographic apparatus. |
| US8604452B2 (en) * | 2011-03-17 | 2013-12-10 | Cymer, Llc | Drive laser delivery systems for EUV light source |
| TWI473373B (zh) * | 2012-11-30 | 2015-02-11 | Ind Tech Res Inst | 間隔時間可調脈衝序列產生裝置 |
| US8791440B1 (en) | 2013-03-14 | 2014-07-29 | Asml Netherlands B.V. | Target for extreme ultraviolet light source |
| US8872143B2 (en) | 2013-03-14 | 2014-10-28 | Asml Netherlands B.V. | Target for laser produced plasma extreme ultraviolet light source |
| US8680495B1 (en) * | 2013-03-15 | 2014-03-25 | Cymer, Llc | Extreme ultraviolet light source |
| US9338870B2 (en) | 2013-12-30 | 2016-05-10 | Asml Netherlands B.V. | Extreme ultraviolet light source |
| US9232623B2 (en) | 2014-01-22 | 2016-01-05 | Asml Netherlands B.V. | Extreme ultraviolet light source |
| US9506871B1 (en) | 2014-05-25 | 2016-11-29 | Kla-Tencor Corporation | Pulsed laser induced plasma light source |
| US9357625B2 (en) * | 2014-07-07 | 2016-05-31 | Asml Netherlands B.V. | Extreme ultraviolet light source |
| WO2016038657A1 (ja) | 2014-09-08 | 2016-03-17 | ギガフォトン株式会社 | パルスレーザ光を極端紫外光チャンバに伝送する伝送システム及びレーザシステム |
| US9301381B1 (en) | 2014-09-12 | 2016-03-29 | International Business Machines Corporation | Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas |
| JP2018507437A (ja) * | 2015-02-19 | 2018-03-15 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源 |
| US10217625B2 (en) | 2015-03-11 | 2019-02-26 | Kla-Tencor Corporation | Continuous-wave laser-sustained plasma illumination source |
| WO2016188546A1 (de) * | 2015-05-22 | 2016-12-01 | Trumpf Laser Gmbh | Vorrichtung zur erzeugung eines hochleistungs-laserstrahls und euv-strahlungserzeugungsvorrichtung damit |
| EP3345054B1 (en) * | 2015-09-03 | 2025-07-23 | ASML Netherlands B.V. | Attenuation apparatus and method |
| US10109582B2 (en) * | 2016-04-19 | 2018-10-23 | Taiwan Semiconductor Manufacturing Company Limited | Advanced metal connection with metal cut |
| US20170311429A1 (en) | 2016-04-25 | 2017-10-26 | Asml Netherlands B.V. | Reducing the effect of plasma on an object in an extreme ultraviolet light source |
| US10048199B1 (en) * | 2017-03-20 | 2018-08-14 | Asml Netherlands B.V. | Metrology system for an extreme ultraviolet light source |
| US10524345B2 (en) * | 2017-04-28 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Residual gain monitoring and reduction for EUV drive laser |
| WO2020064195A1 (en) * | 2018-09-25 | 2020-04-02 | Asml Netherlands B.V. | Laser system for target metrology and alteration in an euv light source |
| US10877378B2 (en) * | 2018-09-28 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vessel for extreme ultraviolet radiation source |
| IL284092B2 (en) | 2018-12-31 | 2025-04-01 | Asml Netherlands Bv | Meteorological positioning device and related optical components |
| KR102807815B1 (ko) | 2020-01-09 | 2025-05-14 | 삼성전자주식회사 | 극자외선 광원의 레이저 빔 딜리버리 장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325380A (en) * | 1992-07-17 | 1994-06-28 | Trw Inc. | Dual wavelength laser emitter |
| US20070248136A1 (en) * | 2006-04-19 | 2007-10-25 | Mobius Photonics, Inc. | Laser apparatus having multiple synchronous amplifiers tied to one master oscillator |
| US20080149862A1 (en) * | 2006-12-22 | 2008-06-26 | Cymer, Inc. | Laser produced plasma EUV light source |
| US20100327192A1 (en) * | 2009-04-10 | 2010-12-30 | Cymer Inc. | Alignment Laser |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7491954B2 (en) * | 2006-10-13 | 2009-02-17 | Cymer, Inc. | Drive laser delivery systems for EUV light source |
| US7372056B2 (en) | 2005-06-29 | 2008-05-13 | Cymer, Inc. | LPP EUV plasma source material target delivery system |
| US7897947B2 (en) | 2007-07-13 | 2011-03-01 | Cymer, Inc. | Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave |
| US7843632B2 (en) | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
| US7598509B2 (en) | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7405416B2 (en) | 2005-02-25 | 2008-07-29 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery |
| US7465946B2 (en) | 2004-03-10 | 2008-12-16 | Cymer, Inc. | Alternative fuels for EUV light source |
| US20060255298A1 (en) | 2005-02-25 | 2006-11-16 | Cymer, Inc. | Laser produced plasma EUV light source with pre-pulse |
| US7518787B2 (en) | 2006-06-14 | 2009-04-14 | Cymer, Inc. | Drive laser for EUV light source |
| US7439530B2 (en) | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
| US7916388B2 (en) * | 2007-12-20 | 2011-03-29 | Cymer, Inc. | Drive laser for EUV light source |
| US7177330B2 (en) | 2003-03-17 | 2007-02-13 | Hong Kong Polytechnic University | Method and apparatus for controlling the polarization of an optical signal |
| US7164144B2 (en) | 2004-03-10 | 2007-01-16 | Cymer Inc. | EUV light source |
| US7087914B2 (en) | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| US7116403B2 (en) * | 2004-06-28 | 2006-10-03 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
| US7715459B2 (en) * | 2005-11-01 | 2010-05-11 | Cymer, Inc. | Laser system |
| US8158960B2 (en) | 2007-07-13 | 2012-04-17 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7952803B2 (en) * | 2006-05-15 | 2011-05-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080036984A1 (en) * | 2006-08-08 | 2008-02-14 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| JP5098019B2 (ja) * | 2007-04-27 | 2012-12-12 | ギガフォトン株式会社 | 極端紫外光源装置 |
| US7812329B2 (en) | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
| US7872245B2 (en) | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
| JP5536401B2 (ja) | 2008-10-16 | 2014-07-02 | ギガフォトン株式会社 | レーザ装置および極端紫外光光源装置 |
| US8445876B2 (en) | 2008-10-24 | 2013-05-21 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
| JP5675127B2 (ja) | 2009-02-27 | 2015-02-25 | ギガフォトン株式会社 | レーザ装置および極端紫外光源装置 |
| JP5701618B2 (ja) * | 2010-03-04 | 2015-04-15 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| US8604452B2 (en) * | 2011-03-17 | 2013-12-10 | Cymer, Llc | Drive laser delivery systems for EUV light source |
-
2011
- 2011-03-17 US US13/050,198 patent/US8604452B2/en not_active Expired - Fee Related
-
2012
- 2012-02-28 WO PCT/US2012/027026 patent/WO2012125287A2/en active Application Filing
- 2012-02-28 JP JP2013558029A patent/JP5759023B2/ja not_active Expired - Fee Related
- 2012-02-28 KR KR1020137027303A patent/KR101963673B1/ko not_active Expired - Fee Related
- 2012-02-28 EP EP12757203.0A patent/EP2686649A4/en not_active Withdrawn
- 2012-03-02 TW TW101106944A patent/TWI559635B/zh not_active IP Right Cessation
-
2013
- 2013-11-22 US US14/087,346 patent/US8829478B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325380A (en) * | 1992-07-17 | 1994-06-28 | Trw Inc. | Dual wavelength laser emitter |
| US20070248136A1 (en) * | 2006-04-19 | 2007-10-25 | Mobius Photonics, Inc. | Laser apparatus having multiple synchronous amplifiers tied to one master oscillator |
| US20080149862A1 (en) * | 2006-12-22 | 2008-06-26 | Cymer, Inc. | Laser produced plasma EUV light source |
| US20100327192A1 (en) * | 2009-04-10 | 2010-12-30 | Cymer Inc. | Alignment Laser |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2686649A4 (en) | 2014-10-29 |
| JP2014510377A (ja) | 2014-04-24 |
| TW201244305A (en) | 2012-11-01 |
| US8604452B2 (en) | 2013-12-10 |
| KR20140016338A (ko) | 2014-02-07 |
| US20140077104A1 (en) | 2014-03-20 |
| WO2012125287A2 (en) | 2012-09-20 |
| US8829478B2 (en) | 2014-09-09 |
| US20120235066A1 (en) | 2012-09-20 |
| KR101963673B1 (ko) | 2019-03-29 |
| EP2686649A2 (en) | 2014-01-22 |
| JP5759023B2 (ja) | 2015-08-05 |
| WO2012125287A3 (en) | 2013-12-27 |
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| TWI559635B (zh) | 用於極端紫外光（ｅｕｖ）光源之驅動雷射輸送系統 | |
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