TWI556453B - 薄膜電晶體 - Google Patents
薄膜電晶體 Download PDFInfo
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- TWI556453B TWI556453B TW104103723A TW104103723A TWI556453B TW I556453 B TWI556453 B TW I556453B TW 104103723 A TW104103723 A TW 104103723A TW 104103723 A TW104103723 A TW 104103723A TW I556453 B TWI556453 B TW I556453B
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- layer
- thin film
- film transistor
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- 239000010409 thin film Substances 0.000 title claims description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 113
- 239000000463 material Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Description
本發明係關於一種薄膜電晶體;特別是關於一種利用多層材料構成主動層之薄膜電晶體。
由於半導體技術的進步,逐漸發展出薄膜電晶體(Thin Film Transistor,TFT)元件作為電子開關,並廣泛地使用於各式電子器材內,以平面顯示器為例,可利用薄膜電晶體作為控制畫素之電荷儲存電容(storage capacitor)的充放電開關元件。
習知薄膜電晶體的主動層通常為單層金屬氧化物構成,其一實施例可參酌「Kenji Nomura,Hiromichi Ohta,Akihiro Takagi,Toshio Kamiya,Masahiro Hirano & Hideo Hosono,“Room-temperature fabrication of transistors using amorphous oxide semiconductors”,NATURE,VOL 432,25 NOVEMBER 2004」論文。
其中,該習知薄膜電晶體係以金屬氧化物(如:InGaZnO,IGZO)取代非晶矽/多晶矽(amorphous/poly silicon)半導體作為主動層材料,以增加金屬氧化物在平面顯示器領域的適用性。惟,該習知薄膜電晶體實際運作時,載子(carrier)無法於主動層內部集中傳導,將導致電晶體元件的載子遷移率(Carrier Mobility)表現不佳。
有鑑於此,上述先前技術在實際使用時確有不便之處,亟需進一步改良,以提升其實用性。
本發明係提供一種薄膜電晶體,可於主動層內部集中傳導載子,以提升電晶體元件的載子遷移率。
本發明揭示一種薄膜電晶體,包含:一基板;一閘極,設於該基板;一絕緣層,設於該閘極;一源極,設於該絕緣層;一汲極,設於該絕緣層;及一主動層,位於該源極及該汲極之間,該主動層由一底部層、一中間層及一頂部層堆疊而成,該底部層設於該絕緣層,該中間層的導電率大於該底部層的導電率,該底部層的導電率大於該頂部層的導電率。
所述中間層可由銦錫鋅氧化物構成。
所述底部層可由低氧含量的銦鎵鋅氧化物構成。
所述頂部層可由高氧含量的銦鎵鋅氧化物構成。
所述閘極可由銦錫氧化物製成。
所述絕緣層可由二氧化矽或氮化矽製成。
上揭薄膜電晶體的主動層可由該底部層、中間層及頂部層堆疊形成多層結構,利用導電率為該中間層大於該底部層大於該頂部層,使該頂部層及底部層形成類絕緣層,可集中載子於該中間層傳導,進而侷限電流傳導路徑,促進汲極電流大幅提升,達成「提升電晶體元件的載子遷移率」功效,改善習知電晶體元件的載子遷移率不佳問題。
1‧‧‧基板
2‧‧‧閘極
3‧‧‧絕緣層
4a‧‧‧源極
4b‧‧‧汲極
5‧‧‧主動層
51‧‧‧底部層
52‧‧‧中間層
53‧‧‧頂部層
第1圖:係本發明薄膜電晶體實施例之結構剖面圖。
第2圖:係本發明薄膜電晶體實施例的電流特性曲線圖。
第3圖:係其係習知IGZO單層材料構成主動層之薄膜電晶體的電流特性曲線圖。
第4圖:係其係習知ITZO單層材料構成主動層之薄膜電晶體的電流特性曲線圖。
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:請參閱第1圖所示,其係本發明薄膜電晶體實施例之結構剖面圖。其中,該薄膜電晶體實施例包含一基板1、一閘極2、一絕緣層3、一源極4a、一汲極4b及一主動層5,該閘極2設置於該基板1,該絕緣層3設置於該閘極2,該源極4a、汲極4b及主動層5設置於該絕緣層3,該該源極4a及汲極4b設置於該主動層5兩側,該主動層5係由一底部層51、一中間層52及一頂部層53堆疊而成,該底部層51設置於該絕緣層3,該中間層52的導電率大於該底部層51的導電率,該底部層51的導電率大於該頂部層53的導電率。
在此實施例中,該主動層5之中間層52可由銦錫鋅氧化物(ITZO)構成,該底部層51可由低氧含量的銦鎵鋅氧化物(IGZO)構成,該頂部層53可由高氧含量的銦鎵鋅氧化物構成,如:該主動層5沉積過程中,該頂部層53(IGZO)的氬氧(Ar/O)流量比可為30/10,該底部層51(IGZO)的氬/氧(Ar/O)流量比可為30/0,該中間層52(ITZO)的氬氧(Ar/O)流量比可為30/0,故,可利用銦錫鋅氧化物的導電率大於銦鎵鋅氧化物,且銦鎵鋅氧化物的氧含量與導電率呈正相關,使該主動層5內部的導電率分佈情形可為〝該中間層52大於該底部層51大於該頂部層53〞,以利薄膜電晶體中的電流傾向通過導通特性佳的中間層52;此外,該基板1可為習知基板(如:玻璃基板等),用以沉積該閘極2、絕緣層3、源極4a、汲極4b及主動層5;該閘極2可由導電薄膜(如:金屬薄膜等)形成;該絕緣層3可由絕緣材(如:二氧化矽或氮化矽等)製成;該源極4a、汲極4b可由導電材(如:銦錫氧化物等)製成,惟不以此為限。
請參閱第2圖所示,其係本發明薄膜電晶體實施例的電流特
性曲線圖。其中,藉由IGZO/ITZO/IGZO三層材料構成該主動層,其載子遷移率可達46.5cm2/V-s。請參閱第3圖所示,其係習知IGZO單層材料構成主動層之薄膜電晶體的電流特性曲線圖,其中,習知IGZO單層材料構成主動層之薄膜電晶體的載子遷移率約為6.6cm2/V-s。請參閱第4圖所示,其係習知ITZO單層材料構成主動層之薄膜電晶體的電流特性曲線圖,其中,習知ITZO單層材料構成主動層之薄膜電晶體的載子遷移率約為13.9cm2/V-s。由第2至4圖可知,本發明薄膜電晶體實施例之主動層藉由多層材料構成,可將電流路徑集中於該主動層之中間層,進而促進汲極電流大幅提升,且載子遷移率(46.5cm2/V-s)優於習知僅具單層主動層的薄膜電晶體。
又,本發明薄膜電晶體實施例之頂部層53藉由沉積時較高的氧流量條件可使該主動層形成類絕緣層,除可防止外界環境氣氛影響該主動層5的特性,並可抵擋後續製程(如:主動保護層或蝕刻終止層)對該主動層5造成破壞,更可避免電流路徑流經背通道,以提高電流集中效果。
藉由前揭之技術手段,本發明薄膜電晶體實施例的主要特點列舉如下:位於該絕緣層、源極及汲極之間的主動層可由該底部層、中間層及頂部層堆疊形成多層結構,利用導電率為該中間層大於該底部層大於該頂部層,使該頂部層及底部層形成類絕緣層,可集中載子於該中間層傳導,進而侷限電流傳導路徑,促進汲極電流大幅提升,且載子遷移率優於習知僅具單層主動層的薄膜電晶體。
因此,本案薄膜電晶體實施例藉由該主動層之中間層的導電率大於該底部層的導電率,該底部層的導電率大於該頂部層的導電率,可以集中傳導載子,達成「提升電晶體元件的載子遷移率」功效,改善習知電晶體元件的載子遷移率不佳問題。
雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1‧‧‧基板
2‧‧‧閘極
3‧‧‧絕緣層
4a‧‧‧源極
4b‧‧‧汲極
5‧‧‧主動層
51‧‧‧底部層
52‧‧‧中間層
53‧‧‧頂部層
Claims (6)
- 一種薄膜電晶體,包含:一基板;一閘極,設於該基板;一絕緣層,設於該閘極;一源極,設於該絕緣層;一汲極,設於該絕緣層;及一主動層,位於該源極及該汲極之間,該主動層由一底部層、一中間層及一頂部層堆疊而成,該底部層設於該絕緣層,該中間層的導電率大於該底部層的導電率,該底部層的導電率大於該頂部層的導電率。
- 根據申請專利範圍第1項所述之薄膜電晶體,其中該中間層由銦錫鋅氧化物構成。
- 根據申請專利範圍第1項所述之薄膜電晶體,其中該底部層由低氧含量的銦鎵鋅氧化物構成。
- 根據申請專利範圍第1項所述之薄膜電晶體,其中該頂部層由高氧含量的銦鎵鋅氧化物構成。
- 根據申請專利範圍第1項所述之薄膜電晶體,其中該閘極由銦錫氧化物製成。
- 根據申請專利範圍第1項所述之薄膜電晶體,其中該絕緣層由二氧化矽或氮化矽製成。
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TW104103723A TWI556453B (zh) | 2015-02-04 | 2015-02-04 | 薄膜電晶體 |
US14/661,707 US9281411B1 (en) | 2015-02-04 | 2015-03-18 | Thin film transistor |
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TW104103723A TWI556453B (zh) | 2015-02-04 | 2015-02-04 | 薄膜電晶體 |
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TW201630191A TW201630191A (zh) | 2016-08-16 |
TWI556453B true TWI556453B (zh) | 2016-11-01 |
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TW104103723A TWI556453B (zh) | 2015-02-04 | 2015-02-04 | 薄膜電晶體 |
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US20110315980A1 (en) * | 2010-06-23 | 2011-12-29 | Jae Ho Kim | Thin Film Transistor and Method of Manufacturing the Same |
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JP5345456B2 (ja) * | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP5322787B2 (ja) * | 2009-06-11 | 2013-10-23 | 富士フイルム株式会社 | 薄膜トランジスタ及びその製造方法、電気光学装置、並びにセンサー |
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US20110315980A1 (en) * | 2010-06-23 | 2011-12-29 | Jae Ho Kim | Thin Film Transistor and Method of Manufacturing the Same |
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US9281411B1 (en) | 2016-03-08 |
TW201630191A (zh) | 2016-08-16 |
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