TWI547309B - Reaction method and device thereof - Google Patents
Reaction method and device thereof Download PDFInfo
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- TWI547309B TWI547309B TW103108382A TW103108382A TWI547309B TW I547309 B TWI547309 B TW I547309B TW 103108382 A TW103108382 A TW 103108382A TW 103108382 A TW103108382 A TW 103108382A TW I547309 B TWI547309 B TW I547309B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明是有關於一種材料之處理設備,特別是指一種使材料在低溫就可以進行加速熟化、純化或優化,也能使高分子聚合物或化學氣相沉積(Chemical Vapor Deposition,簡稱CVD)在低溫條件就能進行反應的方法及裝置。 The invention relates to a processing device for a material, in particular to a material which can be accelerated aging, purification or optimization at a low temperature, and can also be used for high molecular polymer or chemical vapor deposition (CVD). A method and apparatus for carrying out a reaction under low temperature conditions.
近年來,由於電子產業的蓬勃發展以及搭上行動裝置的普及,半導體技術持續發展已經是不爭的事實且變成不可或缺的角色,而且在現有的半導體產品之加工生產製程中,大部分要透過物理氣相沉積(PVD)、電弧式物理氣相沉積(PVD),或化學氣相沉積(CVD)等沉積方法在一基板上沉積出一薄膜,再利用微影黃光(Lithography)與蝕刻(Etching)技術將欲成型之圖樣轉移至該基板上並堆疊出所需的立體結構(Architecture)。然而因所有軟性基板的玻璃轉化溫度都很低,因此,在未來軟性基板的浪潮下,製造上勢必會碰到層層的考驗,必須發展出能使基板在低溫條件(<100℃)下即可沉積出高品質薄膜之低溫化學反應腔。 In recent years, due to the booming development of the electronics industry and the popularity of mobile devices, the continuous development of semiconductor technology has become an indispensable fact and has become an indispensable role, and most of the existing semiconductor products are processed and manufactured. Physical vapor deposition (PVD), arc physical vapor deposition (PVD), or chemical vapor deposition (CVD) deposition methods deposit a thin film on a substrate, using Lithography and etching ( The Etching technique transfers the pattern to be formed onto the substrate and stacks the desired three-dimensional structure. However, since the glass transition temperature of all flexible substrates is very low, in the future, the wave of soft substrates will inevitably encounter the test of layers, and it must be developed to enable the substrate to be under low temperature conditions (<100 ° C). A low temperature chemical reaction chamber for depositing high quality films.
此外,所有射出成型所製成之產品在成型後仍 需施予熟化步驟以使其鍵結更完全,傳統的做法是將產品靜置於烘爐(Oven)中,透過風扇之吹風以促進熟化進行,但是此種做法缺點是熟化時間較長,且均勻度不佳。 In addition, all products made by injection molding are still after molding. The curing step needs to be applied to make the bonding more complete. The conventional method is to statically place the product in an oven (Oven) and promote the curing by blowing the fan, but the disadvantage is that the curing time is long, and Poor uniformity.
再者,目前所有化學反應是將參與反應之化學藥劑置入於溶液中再添加催化劑與增加反應腔溫度來加速化學反應速率,然而這類型化學反應因為是在液態溶劑裡面,相關參與反應的化學分子必須相遇(碰撞)才會發生反應作用,再加上需遵守化學平衡的反應式過程,所以很難在短時間內就使化學反應百分之百完全完成,況且化學反應結束後尚需施予分離溶劑與純化等曠日廢時的過程,無形中使傳統化學反應的合成方法之時間與成本增加很多,所以發展一套在新式氣態反應腔內去進行取代傳統化學反應的技術是有必要的。 Furthermore, all current chemical reactions involve placing a chemical involved in the reaction in a solution and adding a catalyst to increase the temperature of the reaction chamber to accelerate the rate of chemical reaction. However, this type of chemical reaction is in a liquid solvent, and the chemical involved in the reaction The molecules must meet (collision) to react, and the reaction process that requires chemical equilibrium is difficult, so it is difficult to completely complete the chemical reaction in a short time. Moreover, the separation solvent needs to be applied after the chemical reaction is over. It is necessary to develop a set of techniques for replacing traditional chemical reactions in a new gaseous reaction chamber, and the process of purification is equivalent to the time of the conventional chemical reaction.
因此,本發明之一目的,即在提供一種能使材料在低溫就可以進行加速熟化、純化或優化,也能使高分子聚合或化學氣相沉積在低溫條件就能進行反應之反應裝置。 Accordingly, it is an object of the present invention to provide a reaction apparatus which enables accelerated aging, purification or optimization of a material at a low temperature, and which enables polymerization of a polymer or chemical vapor deposition at a low temperature.
本發明之另一目的,則是在於提供一種能使材料在低溫條件下同時進行除污及熟化、純化或優化之反應方法。 Another object of the present invention is to provide a reaction process which enables simultaneous decontamination and ripening, purification or optimization of materials under low temperature conditions.
本發明之又一目的,即在提供一種能在可導電超臨界流體作用過程中搭配照射光線(紫外線光或雷射光)以誘發材料熟化、純化或優化反應,並能縮短熟化時間且 增加均勻度之反應裝置。 It is still another object of the present invention to provide a method of illuminating, purifying or optimizing a reaction with a luminescent light (ultraviolet light or laser light) during the action of a conductive supercritical fluid, and shortening the curing time and A reaction device that increases the uniformity.
本發明之再一目的,則是在於提供一種能在可導電超臨界流體作用過程中搭配化學反應氣體之加入,使得高分子聚合物或化學氣相沉積在低溫條件就能進行反應之反應方法。 A further object of the present invention is to provide a reaction method capable of reacting with a chemical reaction gas in the action of a conductive supercritical fluid so that a polymer or chemical vapor deposition can be carried out at a low temperature.
於是,本發明反應裝置,包含一本體單元、一流體供應單元、一超臨界催化單元、一供電單元,以及一電極單元。該本體單元包括一殼體,以及一可分離地蓋設於該殼體之蓋體,該殼體與該蓋體並共同界定出一密閉腔室。該流體供應單元用以將預定量之可導電工作流體輸入該密閉腔室中。該超臨界催化單元設置於該本體單元並用以對該密閉腔室內的所述可導電工作流體施以加熱及加壓作用,使得該密閉腔室內的所述可導電工作流體成為可導電超臨界流體。該供電單元設置於該本體單元外而用以供應運作所需電力,該供電單元具有一正極與一負極。該電極單元設置於該殼體內且包括一正電極件及一負電極件,該正電極件與該負電極件分別電連接於該供電單元之該正極與該負極,該正電極件並用以承載一待熟化材料,藉由該正電極件與該負電極件之通電,使得所述可導電超臨界流體成為帶電荷超臨界流體,進而對該待熟化材料進行雜質原子拔離、加速熟化反應及結構純化或重整作用。 Thus, the reaction apparatus of the present invention comprises a body unit, a fluid supply unit, a supercritical catalytic unit, a power supply unit, and an electrode unit. The body unit includes a housing and a cover detachably disposed on the housing, the housing and the cover together define a closed chamber. The fluid supply unit is configured to input a predetermined amount of electrically conductive working fluid into the closed chamber. The supercritical catalytic unit is disposed on the body unit and is configured to apply heating and pressurization to the electrically conductive working fluid in the sealed chamber, so that the electrically conductive working fluid in the closed chamber becomes a conductive supercritical fluid . The power supply unit is disposed outside the body unit for supplying power required for operation, and the power supply unit has a positive pole and a negative pole. The electrode unit is disposed in the housing and includes a positive electrode member and a negative electrode member. The positive electrode member and the negative electrode member are respectively electrically connected to the positive electrode and the negative electrode of the power supply unit, and the positive electrode member is used for carrying a material to be matured, wherein the electrically conductive supercritical fluid becomes a charged supercritical fluid by energization of the positive electrode member and the negative electrode member, thereby extracting the impurity atoms from the material to be matured, and accelerating the ripening reaction and Structural purification or reforming.
另外,本發明反應裝置之該流體供應單元還可以用以將預定量之化學反應氣體輸入該密閉腔室中。且該電極單元之該正電極件則是可用以承載一待處理材料,藉 由該正電極件與該負電極件之通電,使得所述可導電超臨界流體成為帶電荷超臨界流體,進而對該待處理材料進行雜質原子拔離及結構純化或重整作用,同時化學反應氣體並會於該待處理材料表面形成一鍍覆層。 Further, the fluid supply unit of the reaction apparatus of the present invention may be further configured to input a predetermined amount of chemical reaction gas into the closed chamber. And the positive electrode member of the electrode unit is usable to carry a material to be processed, The energization of the positive electrode member and the negative electrode member causes the electrically conductive supercritical fluid to become a charged supercritical fluid, thereby performing impurity atom extraction and structural purification or reforming of the material to be treated, and chemical reaction. The gas will form a plating layer on the surface of the material to be treated.
另一方面,本發明反應方法,包含一備置步驟、一可導電超臨界流體作用步驟,及一材料優化步驟。 In another aspect, the reaction method of the present invention comprises a preparation step, a conductive supercritical fluid action step, and a material optimization step.
在該備置步驟中,是備置一密閉腔室,並於該密閉腔室內部設置一正電極件及一負電極件,該正電極件與該負電極件分別與一供電單元之一正極與一負極電連接,並將一待熟化材料置於該正電極件上。 In the preparation step, a sealed chamber is disposed, and a positive electrode member and a negative electrode member are disposed inside the sealed chamber, and the positive electrode member and the negative electrode member are respectively connected to one positive electrode and one power supply unit The negative electrode is electrically connected, and a material to be aged is placed on the positive electrode member.
在該可導電超臨界流體作用步驟,是使該密閉腔室內盛裝有預定量之可導電超臨界流體,藉由所述可導電超臨界流體溶解該待熟化材料表面或內部雜質。 In the conductive supercritical fluid action step, the sealed chamber is filled with a predetermined amount of a conductive supercritical fluid, and the surface of the material to be cured or internal impurities is dissolved by the conductive supercritical fluid.
在該材料優化步驟中,是藉由該供電單元供電,使得該正電極件與該負電極件通電,使得所述可導電超臨界流體成為帶電荷超臨界流體,進而對該待熟化材料進行雜質原子拔離、加速熟化反應及結構純化或重整作用。 In the material optimization step, the power supply unit is powered to electrically energize the positive electrode member and the negative electrode member, so that the conductive supercritical fluid becomes a charged supercritical fluid, thereby performing impurities on the material to be matured. Atom extraction, accelerated ripening reaction and structural purification or reforming.
再者,本發明反應方法之可導電超臨界流體作用步驟,還可以是使該密閉腔室內盛裝有預定量之可導電超臨界流體,且將一化學反應氣體輸入該密閉腔室內,藉由所述可導電超臨界流體溶解該待處理材料表面或內部雜質。進而在該材料優化步驟中,當該正電極件與該負電極件通電,使得所述可導電超臨界流體成為帶電荷超臨界流體而對該待處理材料進行雜質原子拔離及結構純化或重整 作用時,且化學反應氣體並會於該待處理材料表面形成一鍍覆層。 Furthermore, in the reactive supercritical fluid action step of the reaction method of the present invention, the sealed chamber may be filled with a predetermined amount of conductive supercritical fluid, and a chemical reaction gas may be introduced into the closed chamber. The electrically conductive supercritical fluid dissolves the surface or internal impurities of the material to be treated. Further, in the material optimization step, when the positive electrode member and the negative electrode member are energized, the conductive supercritical fluid becomes a charged supercritical fluid, and the impurity to be removed and structurally purified or heavy whole When it acts, the chemical reaction gas forms a plating layer on the surface of the material to be treated.
本發明之功效在於藉由所述可導電超臨界流體溶解該待熟化材料或該待處理材料之表面或內部雜質,同時利用該正電極件與該負電極件之通電,使得所述帶電荷超臨界流體能溶解並去除該待熟化材料或該待處理材料表面或內部雜質,使得該待熟化材料或該待處理材料純化、優化。另外,藉由同時輸入化學反應氣體,可使該待熟化材料或該待處理材料的熟化過程在低溫條件下就可以進行,縮短反應時間且使均勻度增加。此外,該密閉腔室也可以作為氣相化學反應腔,高分子聚合或化學氣相沉積在低溫條件就可進行反應。 The effect of the present invention is to dissolve the surface or internal impurities of the material to be cured or the material to be treated by the electrically conductive supercritical fluid while utilizing the energization of the positive electrode member and the negative electrode member to make the charged super The critical fluid can dissolve and remove the surface or internal impurities of the material to be cured or the material to be treated, so that the material to be cooked or the material to be treated is purified and optimized. In addition, by simultaneously inputting the chemical reaction gas, the maturation process of the material to be aged or the material to be treated can be performed under low temperature conditions, shortening the reaction time and increasing the uniformity. In addition, the closed chamber can also be used as a gas phase chemical reaction chamber, and polymerization can be carried out under high temperature conditions by polymer polymerization or chemical vapor deposition.
2‧‧‧反應裝置 2‧‧‧Reaction device
21‧‧‧本體單元 21‧‧‧ Body unit
211‧‧‧殼體 211‧‧‧Shell
212‧‧‧蓋體 212‧‧‧ Cover
213‧‧‧密閉腔室 213‧‧‧Closed chamber
22‧‧‧流體供應單元 22‧‧‧Fluid supply unit
221‧‧‧可導電工作流體供應源 221‧‧‧Electrically conductive working fluid supply
222‧‧‧化學反應氣體供應源 222‧‧‧Chemical reaction gas supply
23‧‧‧超臨界催化單元 23‧‧‧Supercritical Catalytic Unit
231‧‧‧加熱器 231‧‧‧heater
232‧‧‧加壓器 232‧‧‧ pressurizer
24‧‧‧供電單元 24‧‧‧Power supply unit
241‧‧‧正極 241‧‧‧ positive
242‧‧‧負極 242‧‧‧negative
25‧‧‧電極單元 25‧‧‧Electrode unit
251‧‧‧正電極件 251‧‧‧ positive electrode parts
252‧‧‧負電極件 252‧‧‧Negative electrode parts
26‧‧‧照光單元 26‧‧‧Lighting unit
31‧‧‧待熟化材料 31‧‧‧Materials to be matured
32‧‧‧待處理材料 32‧‧‧Materials to be processed
41‧‧‧備置步驟 41‧‧‧Preparation steps
42‧‧‧可導電超臨界流體作用步驟 42‧‧‧ Conductive supercritical fluid action steps
43‧‧‧材料優化步驟 43‧‧‧Material optimization steps
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一示意圖,說明本發明反應裝置之第一較佳實施例;圖2是一流程圖,說明本發明反應方法之第一較佳實施例;圖3是一示意圖,說明本發明反應裝置之第二較佳實施例;圖4是一示意圖,說明本發明反應裝置之第三較佳實施例;以及圖5是一示意圖,輔助說明圖4。 Other features and advantages of the present invention will be apparent from the embodiments of the present invention, wherein: FIG. 1 is a schematic diagram illustrating a first preferred embodiment of the reaction apparatus of the present invention; FIG. 2 is a flow chart. A first preferred embodiment of the reaction method of the present invention is illustrated; FIG. 3 is a schematic view showing a second preferred embodiment of the reaction apparatus of the present invention; and FIG. 4 is a schematic view showing a third preferred embodiment of the reaction apparatus of the present invention. And Figure 5 is a schematic diagram to aid in the description of Figure 4.
參閱圖1,本發明反應裝置2之第一較佳實施例,其包含一本體單元21、一流體供應單元22、一超臨界催化單元23、一供電單元24,以及一電極單元25。 Referring to FIG. 1, a first preferred embodiment of a reaction device 2 of the present invention comprises a body unit 21, a fluid supply unit 22, a supercritical catalytic unit 23, a power supply unit 24, and an electrode unit 25.
該本體單元21包括一殼體211,以及一可分離地蓋設於該殼體211之蓋體212,該蓋體212蓋置於該殼體211後,二者並共同界定出一密閉腔室213。 The main body unit 21 includes a housing 211 and a cover 212 detachably disposed on the housing 211. The cover 212 is disposed behind the housing 211, and together define a closed chamber. 213.
該流體供應單元22是用以使該密閉腔室213中盛裝有預定量之可導電工作流體(圖未示)。所述可導電工作流體是選自所列其中之一:水、二氧化碳與水之組合、二氧化碳與甲醇之組合。在本較佳實施例中是以水做說明。 The fluid supply unit 22 is configured to hold the sealed chamber 213 with a predetermined amount of electrically conductive working fluid (not shown). The electrically conductive working fluid is selected from the group consisting of water, a combination of carbon dioxide and water, and a combination of carbon dioxide and methanol. In the preferred embodiment, water is used for illustration.
該超臨界催化單元23包括一設置於該本體單元21並用以對該密閉腔室213內的可導電工作流體進行加熱作用之加熱器231,以及一設置於該本體單元21並用以對該密閉腔室213內的可導電工作流體進行加壓作用之加壓器232,藉由啟動該加熱器231之加熱及該加壓器232之加壓作用,使得該密閉腔室213內的可導電工作流體成為可導電超臨界流體。 The supercritical catalytic unit 23 includes a heater 231 disposed on the body unit 21 for heating the electrically conductive working fluid in the sealed chamber 213, and a heater 231 disposed on the body unit 21 for use in the sealed chamber The pressurizing device 232 of the electrically conductive working fluid in the chamber 213 is pressurized, and the conductive working fluid in the closed chamber 213 is activated by starting the heating of the heater 231 and the pressurization of the pressurizing device 232. Become a conductive supercritical fluid.
該供電單元24為直流電源且具有一正極與一負極。該供電單元24設置於該本體單元21外以供應運作所需電力。 The power supply unit 24 is a DC power source and has a positive pole and a negative pole. The power supply unit 24 is disposed outside the body unit 21 to supply power required for operation.
該電極單元25設置於該殼體211內且包括一正電極件251及一負電極件252,該正電極件251與該負電極件252分別與該供電單元24之正極241、負極242電連接。 The electrode unit 25 is disposed in the housing 211 and includes a positive electrode member 251 and a negative electrode member 252. The positive electrode member 251 and the negative electrode member 252 are electrically connected to the positive electrode 241 and the negative electrode 242 of the power supply unit 24, respectively. .
參閱圖1、2,至於本發明反應方法之第一較佳實施例,包含一備置步驟41、一可導電超臨界流體作用步驟42,以及一材料優化步驟43。在該備置步驟41中,是備置一如上述之反應裝置2,並將一待熟化材料31置於該正電極件251上,並將該蓋體212蓋設於該殼體211上後,且使該密閉腔室213抽成真空狀態。 Referring to Figures 1 and 2, a first preferred embodiment of the reaction method of the present invention comprises a preparation step 41, an electrically conductive supercritical fluid action step 42, and a material optimization step 43. In the preparation step 41, a reaction device 2 as described above is disposed, and a material to be cooked 31 is placed on the positive electrode member 251, and the cover 212 is placed on the housing 211, and The sealed chamber 213 is evacuated.
接著,在該可導電超臨界流體作用步驟42中,是利用該流體供應單元22將可導電工作流體輸入該密閉腔室213內,待確認該密閉腔室213內的可導電工作流體已達預定量後,隨即藉由調整該加熱器231之加熱溫度及該加壓器232所施加之壓力,使得該密閉腔室213內的可導電工作流體成為可導電超臨界流體。由於所述可導電超臨界流體具有極高的溶解能力,因而可溶解所述待熟化材料31之表面或內部雜質。 Next, in the conductive supercritical fluid action step 42, the fluid supply unit 22 is used to input the conductive working fluid into the sealed chamber 213, and it is confirmed that the conductive working fluid in the closed chamber 213 has reached the predetermined time. After the amount, the electrically conductive working fluid in the sealed chamber 213 becomes the electrically conductive supercritical fluid by adjusting the heating temperature of the heater 231 and the pressure applied by the pressurizer 232. Since the electrically conductive supercritical fluid has an extremely high dissolving power, the surface or internal impurities of the material to be matured 31 can be dissolved.
之後,進行該材料優化步驟43,藉由該供電單元24供電,使得該電極單元25之正電極件251及負電極件252通電,此時正電極件252作為犧牲陽極而對待熟化材料31進行雜質原子拔離作用。待預設執行時間屆滿,再打開蓋體212,取出所述待熟化材料31即可。 Then, the material optimization step 43 is performed, and the power supply unit 24 supplies power, so that the positive electrode member 251 and the negative electrode member 252 of the electrode unit 25 are energized. At this time, the positive electrode member 252 serves as a sacrificial anode to treat the mature material 31 with impurities. Atom pull-off. After the preset execution time expires, the cover 212 is opened again, and the material to be matured 31 is taken out.
特別說明的是,所謂待熟化材料31是指需經熟化反應過程之材料,如聚氨酯(Polyurethane,PU)經射出成型作業後,尚需靜置冷卻一段時間,以進行熟化反應過程,如此才能使結構熟化並趨於穩定。因而透過本發明之方法的實施,不但可拔離該待熟化材料31於前置作業(如射出 成型作業等)所殘留之雜質原子,且雜質原子去除的同時還能使該待熟化材料31的結構純化或重整,使得該待熟化材料31純化、優化,且縮短反應時間、均勻度及緻密度也會增加。 In particular, the material to be aged 31 refers to a material that needs to undergo a ripening reaction process. For example, after polyurethane (Polyurethane, PU), it needs to be left to cool for a period of time after the injection molding operation, so as to carry out the ripening reaction process. The structure matures and tends to be stable. Therefore, through the implementation of the method of the present invention, not only the material to be aged 31 can be pulled out from the front work (such as injection). The impurity atoms remaining in the molding operation and the like, and the impurity atoms are removed, and the structure of the material to be matured 31 can be purified or reformed, so that the material to be matured 31 is purified, optimized, and the reaction time, uniformity, and density are shortened. The degree will also increase.
參閱圖3,本發明反應裝置2之第二較佳實施例,本較佳實施例與前述反應裝置2之第一較佳實施例大致相同,不同的地方是在於還可包括一設置於該殼體211內而用以對該待熟化材料31照射光線之照光單元26,該照光單元26所輸出的光線是選自紫外線光(即UV光)或雷射光。 Referring to FIG. 3, a second preferred embodiment of the reaction device 2 of the present invention, the preferred embodiment is substantially the same as the first preferred embodiment of the reaction device 2, and the difference is that the casing may be further disposed on the casing. The illumination unit 26 for irradiating the material to be matured 31 with light is provided in the body 211. The light output by the illumination unit 26 is selected from ultraviolet light (i.e., UV light) or laser light.
續參閱圖2、3,本發明反應方法之第二較佳實施例,本較佳實施例與前述方法之第一較佳實施例大致相同,不同的地方是在於:在該備置步驟41中,是備置一如反應裝置2之第二較佳實施例所示者。在該材料優化步驟43中,還藉由設置於該密閉腔室213內之照光單元26能同時對該待熟化材料31照射光線,更能誘發及加速該待熟化材料31之熟化反應,有效地縮短熟化反應時間。 2 and 3, a second preferred embodiment of the present invention, the preferred embodiment is substantially the same as the first preferred embodiment of the foregoing method, and the difference is that in the preparation step 41, It is provided as shown in the second preferred embodiment of the reaction device 2. In the material optimization step 43, the illuminating unit 31 can be simultaneously irradiated with light by the illuminating unit 26 disposed in the sealed chamber 213, and the aging reaction of the material to be matured 31 can be induced and accelerated. Shorten the ripening reaction time.
參閱圖4,本發明反應裝置2之第三較佳實施例,本較佳實施例與前述反應裝置2之第一較佳實施例大致相同,不同的地方是在於:該流體供應單元22包括一用以供應所述可導電工作流體之可導電工作流體供應源221,以及一用以供應所述化學反應氣體之化學反應氣體供應源222。藉由可導電工作流體供應源221及化學反應氣體供應源222分別將預定量之可導電工作流體及化學反應氣 體輸入該密閉腔室213中。後續所進行之作業如下詳述。 Referring to FIG. 4, a third preferred embodiment of the reaction device 2 of the present invention, the preferred embodiment is substantially the same as the first preferred embodiment of the reaction device 2, except that the fluid supply unit 22 includes a An electrically conductive working fluid supply source 221 for supplying the electrically conductive working fluid, and a chemical reaction gas supply source 222 for supplying the chemical reaction gas. A predetermined amount of the conductive working fluid and the chemical reaction gas are respectively respectively supplied by the conductive working fluid supply source 221 and the chemical reaction gas supply source 222 The body is input into the closed chamber 213. The subsequent operations are detailed below.
續參閱圖2、4,本發明反應方法之第三較佳實施例,本較佳實施例與前述方法之第一較佳實施例大致相同,不同的地方是在於:在該備置步驟41中,是備置一如反應裝置2之第三較佳實施例所示者,並將一待處理材料32置於該正電極件251上,所述待處理材料32是以基板形態做說明,但不應以此為限。在可導電超臨界流體作用步驟42中,是利用可導電工作流體供應源221及化學反應氣體供應源222分別將預定量之可導電工作流體及化學反應氣體輸入該密閉腔室213中,藉由所述可導電超臨界流體溶解該待處理材料表面或內部雜質。在材料優化步驟43中,則是藉由該供電單元24供電而使該正電極件251與該負電極件252通電,使得所述可導電超臨界流體成為帶電荷超臨界流體,進而對該待處理材料32進行雜質原子拔離作用,同時藉由所述可導電超臨界流體催化成為帶電荷超臨界流體之過程中所實施的高壓條件也會使該待處理材料32的原子重新排列而進行結構熟化、純化或重整作用,此時化學反應氣體並會同時於該待處理材料32表面以薄膜沉積方式均勻地形成一鍍覆層(圖未示)。 2 and 4, a third preferred embodiment of the present invention, the preferred embodiment is substantially the same as the first preferred embodiment of the foregoing method, and the difference is that in the preparation step 41, It is provided as shown in the third preferred embodiment of the reaction device 2, and a material to be treated 32 is placed on the positive electrode member 251. The material to be treated 32 is described in the form of a substrate, but should not This is limited to this. In the conductive supercritical fluid action step 42 , a predetermined amount of the conductive working fluid and the chemical reaction gas are respectively input into the sealed chamber 213 by using the conductive working fluid supply source 221 and the chemical reaction gas supply source 222 . The electrically conductive supercritical fluid dissolves surface or internal impurities of the material to be treated. In the material optimization step 43, the positive electrode member 251 and the negative electrode member 252 are energized by the power supply unit 24, so that the electrically conductive supercritical fluid becomes a charged supercritical fluid, and the The processing material 32 performs impurity atom detachment, and at the same time, the high pressure condition implemented in the process of catalyzing the charged supercritical fluid into the charged supercritical fluid also rearranges the atoms of the material to be treated 32 to perform the structure. The aging, purification or reforming action, at this time, the chemical reaction gas uniformly forms a plating layer (not shown) uniformly on the surface of the material to be treated 32 by thin film deposition.
本實施例之反應裝置2同樣還可包括一設置於該殼體211內而用以對該待處理材料32照射光線之照光單元26,該照光單元26所輸出的光線是選自紫外線光或雷射光。而所搭配實施之反應方法,在該材料優化步驟43中,藉由該正電極件251與該負電極件252之通電及該照光單 元26對該待處理材料32照射紫外線光或雷射光,以使所述化學反應氣體於該待處理材料32表面形成該鍍覆層(圖未示),加速誘發該待處理材料32之熟化、純化或優化反應,有效地縮短反應時間。 The reaction device 2 of the present embodiment may also include an illumination unit 26 disposed in the housing 211 for illuminating the material to be treated 32. The light output by the illumination unit 26 is selected from the group consisting of ultraviolet light or thunder. Shoot light. In the material optimization step 43 , the positive electrode member 251 and the negative electrode member 252 are energized and the illumination sheet is matched. The material 26 is irradiated with ultraviolet light or laser light to form the chemical reaction gas on the surface of the material to be treated 32 to form the plating layer (not shown), and accelerates the aging of the material to be treated 32. Purification or optimization of the reaction effectively shortens the reaction time.
特別說明的是,如圖5所示,所述待處理材料32也可以是化學反應槽形態,但不應以此為限。藉此經本較佳實施例的方法操作後,可於該待處理材料32內、外表面內沉積出該鍍覆層(圖未示),使得該待處理材料32能供特定的化學反應之使用所需。 Specifically, as shown in FIG. 5, the material to be treated 32 may also be in the form of a chemical reaction tank, but it should not be limited thereto. After the operation of the preferred embodiment, the plating layer (not shown) can be deposited on the inner and outer surfaces of the material to be treated 32, so that the material to be treated 32 can be used for a specific chemical reaction. Required.
因此,藉由上述本發明反應方法及其裝置之設計,不但可使該待熟化材料31在低溫條件仍可進行結構重整以快速地進行熟化過程,或該待處理材料32在低溫條件仍可進行優化過程,經過結構純化或重整後的材料可以從非晶質(amorphous)轉變成多晶質(polycrystalline)或單晶質(single crystal)材料,也可能將多晶質(polycrystal-line)轉變成單晶質(single crystal)材料,原因是該反應裝置2可以在低溫條件下仍使待處理材料32中之原子或分子規律性區域變大,也就是將待處理材料32原先原子或分子排列方向並不一致之微晶粒(grain)作修正的動作,除了將晶界之異質原子以類似電鍍過程的犧牲陽極作用被抽離至負極,且原子在足夠能量下進行重新排列,造成擁有週期性排列之區域可以擴充變大,此外,該待熟化材料31或該待處理材料32之整體表面也變得較平坦。 Therefore, by the above-described reaction method of the present invention and the design thereof, not only the material to be aged 31 can be structurally reformed at a low temperature to rapidly perform the aging process, or the material to be treated 32 can still be subjected to a low temperature condition. After the optimization process, the material after structural purification or reforming can be transformed from amorphous to polycrystalline or single crystal material, or polycrystal-line. Conversion into a single crystal material because the reaction device 2 can still increase the atomic or molecular regularity region of the material to be treated 32 at a low temperature, that is, the original atom or molecule of the material to be treated 32 A grain of grain that is aligned and inconsistent is corrected, except that the heterogeneous atoms of the grain boundary are extracted to the negative electrode by a sacrificial anode effect similar to the electroplating process, and the atoms are rearranged under sufficient energy to cause a possession cycle. The region of the sexual arrangement can be expanded and enlarged, and in addition, the entire surface of the material to be aged 31 or the material to be treated 32 becomes flat.
綜上所述,本發明反應方法及其裝置藉由所述 可導電超臨界流體溶解該待熟化材料31或該待處理材料32表面或內部雜質,同時利用該正電極件251與該負電極件252之通電,搭配該照光單元26是否引入紫外線光或雷射光而產生不同反應:當沒有引入紫外線光或雷射光時,該正電極件251作為犧牲陽極而對該待熟化材料31或該待處理材料32進行雜質原子拔離作用,使得該待熟化材料31或該待處理材料32熟化或純化或優化。另當有引入紫外線光或雷射光時,則可在該正電極件251與該負電極件252間對該待熟化材料31或該待處理材料32進行低溫熟化作用,如此不但可縮短熟化反應時間,而且均勻度增加。此外,該密閉腔室213也可以作為氣相化學反應腔,使高分子聚合或化學氣相沉積在低溫條件就能進行反應。故確實能達成本發明之目的。 In summary, the reaction method and apparatus of the present invention are described by The conductive supercritical fluid dissolves the surface or internal impurities of the material to be cured 31 or the material to be treated 32, and simultaneously energizes the positive electrode member 251 and the negative electrode member 252, and whether the illumination unit 26 introduces ultraviolet light or laser light. A different reaction occurs: when no ultraviolet light or laser light is introduced, the positive electrode member 251 acts as a sacrificial anode to perform impurity atom extraction on the material to be matured 31 or the material to be treated 32, so that the material to be matured 31 or The material to be treated 32 is matured or purified or optimized. In addition, when ultraviolet light or laser light is introduced, the material to be aged 31 or the material to be treated 32 may be subjected to low-temperature curing between the positive electrode member 251 and the negative electrode member 252, so that the ripening reaction time can be shortened. And the uniformity increases. In addition, the sealed chamber 213 can also be used as a gas phase chemical reaction chamber to allow a polymer or chemical vapor deposition to react at a low temperature. Therefore, the object of the present invention can be achieved.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.
2‧‧‧反應裝置 2‧‧‧Reaction device
21‧‧‧本體單元 21‧‧‧ Body unit
211‧‧‧殼體 211‧‧‧Shell
212‧‧‧蓋體 212‧‧‧ Cover
213‧‧‧密閉腔室 213‧‧‧Closed chamber
22‧‧‧流體供應單元 22‧‧‧Fluid supply unit
23‧‧‧超臨界催化單元 23‧‧‧Supercritical Catalytic Unit
231‧‧‧加熱器 231‧‧‧heater
232‧‧‧加壓器 232‧‧‧ pressurizer
24‧‧‧供電單元 24‧‧‧Power supply unit
241‧‧‧正極 241‧‧‧ positive
242‧‧‧負極 242‧‧‧negative
25‧‧‧電極單元 25‧‧‧Electrode unit
251‧‧‧正電極件 251‧‧‧ positive electrode parts
252‧‧‧負電極件 252‧‧‧Negative electrode parts
26‧‧‧照光單元 26‧‧‧Lighting unit
32‧‧‧待處理材料 32‧‧‧Materials to be processed
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JP2000157859A (en) * | 1998-11-24 | 2000-06-13 | Yasuaki Suzuki | Supercritical fluid reaction utilizing deep sea pressure |
JP2002186843A (en) * | 2000-12-21 | 2002-07-02 | Japan Organo Co Ltd | Supercritical water reaction device |
JP2002210345A (en) * | 2001-01-17 | 2002-07-30 | Japan Organo Co Ltd | Supercritical water reaction apparatus |
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JP2000157859A (en) * | 1998-11-24 | 2000-06-13 | Yasuaki Suzuki | Supercritical fluid reaction utilizing deep sea pressure |
JP2002186843A (en) * | 2000-12-21 | 2002-07-02 | Japan Organo Co Ltd | Supercritical water reaction device |
JP2002210345A (en) * | 2001-01-17 | 2002-07-30 | Japan Organo Co Ltd | Supercritical water reaction apparatus |
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