TWI529004B - Material low temperature optimization method and device thereof - Google Patents

Description

Material low temperature optimization method and device thereof

The present invention relates to an apparatus for treating materials, and more particularly to a method and apparatus for optimizing materials at low temperatures.

In recent years, due to the booming development of the electronics industry and the popularity of mobile devices, the continuous development of semiconductor technology has become an indispensable fact and has become an indispensable role, and most of the existing semiconductor products are processed and manufactured. Physical vapor deposition (PVD), arc physical vapor deposition (PVD), or chemical vapor deposition (Chemical Vaper Deposition) deposition methods deposit a thin film on a substrate, and then use Lithography and The Etching technique transfers the pattern to be formed onto the substrate and stacks the desired three-dimensional structure. The quality of the semiconductor product produced by the above method is largely determined by the quality of the film formed during the deposition process, and whether the static charge and dirt accumulated on the semi-finished product in the process are completely removed. In the existing process, when the semi-finished product is deposited in a vacuum environment, it is necessary to break the vacuum and move to a high-temperature furnace tube machine, and then access the machine with a high-temperature ambient gas (Ambient gas) of more than 1000 degrees Celsius. With the formation of The semi-finished product of the film is subjected to an anneaal treatment to homogenize the grain structure inside the material.

However, under the long-term treatment of high-temperature film materials, there is a problem of accumulation of thermal stress, which seriously affects the reliability of the final product. Under the trend of increasingly strict line width requirements in the industry, high-temperature long-time constant temperature treatment is used to obtain high-quality film. The technology will gradually be phased out in the future, and it is more likely that it will not continue to be used in future electronic products such as soft electronics and flexible electronics that are highly reliable. And in the wave of soft substrates in the future, it is bound to encounter another layer of testing. The main reason is that the glass transition temperature of all soft substrates is very low, so the development of low temperature optimization is an urgent task, now all over the world. Science and technology manufacturers, all efforts to develop in the future table must be the focus of attention and chase, high temperature optimization in the future semiconductor process will include (1) long heat treatment (up to tens of hours), (2) heat treatment The cost of electricity required is very high, (3) the temperature required for heat treatment and the thermal profile are not consistent, which may cause distortion of the wafer, (4) small control window of process parameters, (5) temperature of heat treatment, displacement of electric field impurities, etc. Many unfavorable factors are bound to be replaced in the more sophisticated process in the future.

In addition, the existing process technology can not provide a complete and effective solution to the problem of accumulation of dirt and static charge in the process. This problem is bound to be more stringent in the trend of online width and reliability of finished products. Yield and reliability have a considerable impact.

In addition, some parts of the semiconductor manufacturing process often need to act as a support for the wafer. The surface will be eroded after a period of use. If there are some material optimization programs, this optimization action will be the material. If the parts damaged by erosion are repaired one by one, the support of the part will have the opportunity to return to the production line to continue to play the original role and task, so that the life support and service life of the part support can be extended invisibly. This concept can be manufactured. Cost reduction is also another application for material optimization.

Accordingly, it is an object of the present invention to provide a material cryogenic optimization apparatus that simultaneously decontaminates materials and optimizes the material at low temperatures.

Another object of the present invention is to provide a low temperature optimization method for materials which can simultaneously perform decontamination and optimization of materials under low temperature conditions.

Therefore, the material low temperature optimization device of the present invention comprises a body unit, a fluid supply unit, a supercritical catalytic unit, a power supply unit, and an electrode unit. The body unit includes a housing and a cover detachably disposed on the housing, the housing and the cover together define a closed chamber. The fluid supply unit is configured to hold the sealed chamber with a predetermined amount of fluid. The supercritical catalytic unit includes a heater disposed on the body unit for heating the fluid in the sealed chamber, and a heater disposed on the body unit for pressurizing the fluid in the sealed chamber The pressure device causes the fluid in the closed chamber to become a supercritical fluid by the heating of the heater and the pressurization of the pressurizer. The power supply unit is disposed outside the body unit for supplying power required for operation, and the power supply unit has a positive pole and a negative pole. The electrode unit is disposed in the housing and includes a positive electrode member and a negative electrode member. The positive electrode member and the negative electrode member are respectively electrically connected to the positive electrode and the negative electrode of the power supply unit, and the positive electrode And carrying a material to be treated, dissolving the surface impurities of the material to be treated by the supercritical fluid, and energizing the negative electrode member by using the positive electrode member and the negative electrode member, so that the surface of the material to be processed is subjected to impurity atom extraction from.

In another aspect, the method for low temperature optimization of the material of the present invention comprises a preparation step, a first supercritical fluid cleaning step, a material optimization step, and a second supercritical fluid cleaning step.

In the preparation step, a sealed chamber is disposed, and a positive electrode member and a negative electrode member are disposed inside the sealed chamber, and the positive electrode member and the negative electrode member are respectively connected to one positive electrode and one power supply unit The negative electrode is electrically connected.

In the first supercritical fluid cleaning step, a material to be treated is placed on the positive electrode member, and the sealed chamber is filled with a predetermined amount of a supercritical fluid, and the supercritical fluid is dissolved. The surface impurities of the material to be treated are removed.

In the material optimization step, the power supply unit is powered, so that the positive electrode member and the negative electrode member are energized, so that the surface of the material to be processed is subjected to impurity atom extraction.

In the second supercritical fluid cleaning step, the surface cleaning operation of the material to be treated which has been processed by the material optimization step is performed again by the supercritical fluid.

The invention has the effect of dissolving the surface impurities of the material to be treated by the supercritical fluid, and simultaneously energizing the positive electrode member and the negative electrode member, so that the positively charged impurity atoms on the surface of the material to be treated are moved to The negative electrode member moves away from the positive electrode member, so that it can be relatively low The material to be treated is optimized at a low temperature in a mild and relatively high-pressure environment to make the structure of the material to be treated more dense, and at the same time, the positive electrode member is used as a sacrificial anode to conduct impurity atom extraction on the material to be treated. The material to be treated is further purified, and is a high-quality material with good uniformity and uniform coverage.

2‧‧‧Material optimization device

21‧‧‧ Body unit

211‧‧‧Shell

212‧‧‧ Cover

213‧‧‧Closed chamber

22‧‧‧Fluid supply unit

23‧‧‧Supercritical Catalytic Unit

231‧‧‧heater

232‧‧‧ pressurizer

24‧‧‧Power supply unit

25‧‧‧Electrode unit

251‧‧‧ positive electrode parts

252‧‧‧Negative electrode parts

3‧‧‧Materials to be processed

41‧‧‧Preparation steps

42‧‧‧First supercritical fluid cleaning step

43‧‧‧Material optimization steps

44‧‧‧Second Supercritical Fluid Cleaning Step

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic diagram illustrating a preferred embodiment of the material low temperature optimization apparatus of the present invention; FIG. 3 is a flow chart showing a preferred embodiment of the low temperature optimization method of the material of the present invention; and FIG. 4 is a schematic view showing the atomic arrangement of the amorphous material; Figure 5 is a schematic view showing an atomic arrangement of a polycrystalline material; Figure 6 is a schematic view showing an atomic arrangement of a single crystal material; and Figures 7(a) to (c) are a crystal phase diagram, Figure 4 to 6 are separately explained.

Referring to FIG. 1, the material low temperature optimization device 2 of the present invention comprises a body unit 21, a fluid supply unit 22, a supercritical catalytic unit 23, a power supply unit 24, and an electrode unit 25.

The body unit 21 includes a housing 211 and a separable The cover 212 is disposed on the cover 212 of the housing 211. The cover 212 is disposed behind the housing 211, and together define a closed chamber 213.

The fluid supply unit 22 is for holding the sealed chamber 213 with a predetermined amount of fluid. The fluid is water, or a combination of carbon dioxide and water, or a combination of carbon dioxide and methanol. In the preferred embodiment, water is used for illustration.

The supercritical catalytic unit 23 includes a heater 231 disposed on the body unit 21 for heating the fluid in the sealed chamber 213, and a heater 231 disposed on the body unit 21 for use in the sealed chamber 213. The pressurizing device 232 for pressurizing the fluid causes the fluid in the sealed chamber 213 to become a supercritical fluid by activating the heating of the heater 231 and the pressurization of the pressurizing device 232.

The power supply unit 24 is a DC power source and has a positive pole and a negative pole. The power supply unit 24 is disposed outside the body unit 21 to supply power required for operation.

The electrode unit 25 is disposed in the housing 211 and includes a positive electrode member 251 and a negative electrode member 252. The positive electrode member 251 and the negative electrode member 252 are electrically connected to the positive electrode and the negative electrode of the power supply unit 24, respectively.

Referring to Figures 2 and 3, a preferred embodiment of the low temperature optimization method of the present invention comprises a preparation step 41, a first supercritical fluid cleaning step 42, a material optimization step 43, and a second supercritical Fluid cleaning step 44. In the preparation step 41, a material low temperature optimization device 2 as described above is provided.

Then, in the first supercritical fluid cleaning step 42, A material to be treated 3 is placed on the positive electrode member 251, and a material to be treated 3 is placed on the positive electrode member 251. After the cover 212 is placed on the housing 211, the closed chamber is closed. The chamber 213 is evacuated, and then the fluid is supplied into the sealed chamber 213 by the fluid supply unit 22. After the fluid in the closed chamber 213 has been confirmed to be a predetermined amount, the heater 231 is adjusted. The heating temperature and the pressure applied by the pressurizer 232 cause the fluid in the closed chamber 213 to become a supercritical fluid. Since the supercritical fluid has an extremely high dissolving power, impurities such as contamination, particles, and static charges adhering to the surface of the material to be treated 3 can be dissolved. Thus, the surface impurities of the material to be treated 3 can be dissolved by the supercritical fluid.

Then, the material optimization step 43 is performed, and the power supply unit 24 supplies power, so that the positive electrode member 251 and the negative electrode member 252 of the electrode unit 25 are energized. At this time, the positive electrode member 252 functions as a sacrificial anode and the material to be processed 3 is different. Impurity removal.

Finally, the second supercritical fluid cleaning step 44 is performed. In this step, after the material optimization step 43, the electrode unit 25 is switched to be powered off, and the supercritical fluid is again used to process the material optimization step 43. The charge generated by the material to be processed 3 is cleaned after the processing, and after the processing is completed, the cover 212 is opened again, and the material to be processed 3 is taken out.

In particular, the process of material optimization described above can be explained from the viewpoint of atomic or molecular arrangement of materials: amorphous (as shown in Figure 4, Figure 7 (a)), polycrystalline (polycrystalline) (as shown in Figure 5, Figure 7 (b)), and single crystal (as shown in Figure 6, Figure 7 (c)) materials are three common forms of solid materials, each form It can be defined by the size of the regular regions of the material. The so-called regular region refers to the regular region of the size of an atom or molecule. In the case of the polycrystalline material shown in Fig. 5 and Fig. 7(b), there are tens or hundreds of atomic or molecular size regular regions. However, the area in which the atoms or molecules are not aligned in the direction is called the grain. The grains are separated from each other by a so-called grain boundary. Ideally, the single crystal material shown in Fig. 6 and Fig. 7(c) has a complete atom or molecule having a periodic arrangement, that is, the region is expanded to the entire material space, since the grain boundary reduces the characteristic of the electron, generally In other words, single crystal materials have better electrical properties than non-single crystal (amorphous or polycrystalline) materials.

Therefore, by the above-mentioned low-temperature optimization method of the material of the present invention and the design of the device thereof, not only the material to be treated 3 can be optimized in a low temperature condition, but the optimized material can be transformed from amorphous to polycrystalline ( Polycrystalline) or single crystal materials may also convert polycrystal-line into a single crystal material because the material low temperature optimization device 2 can still be treated under low temperature conditions. The atomic or molecular regularity region in the processing material 3 becomes larger, that is, the grain in which the original atom or the molecular arrangement direction of the material to be treated is inconsistent is corrected, except for the heterogeneous atom of the grain boundary ( A sacrificial anode similar to the electroplating process is evacuated to the negative electrode, and the atoms are rearranged at a sufficient energy, so that the region having the periodic arrangement can be expanded and enlarged, and further, the entire surface of the material to be treated 3 becomes flat.

Therefore, the present invention has many necessary advantages for the low temperature optimization of the material, including: (1) rapid heat treatment, which can be achieved in a few hours, and (2) heat treatment temperature is much higher than room temperature but the cost is much lower, (3) The temperature and thermal temperature profile required for heat treatment are easy to control and do not cause any geometric flatness change of the wafer, (4) the process parameter control window is large, and (5) the temperature of the heat treatment does not cause the electric field impurities to shift, so Product yield is easy to control.

In summary, the low temperature optimization method and the device of the present invention are configured to dissolve surface impurities of the material to be treated 3 by using the supercritical fluid, and simultaneously match the positive electrode member 251 and the negative electrode member 252. The material of the material to be treated 3 is de-energized from the positive electrode member 251, so that the material to be treated 3 can be optimized at a low temperature in a relatively low temperature and a relatively high pressure environment, so that the structure of the material to be treated 3 is more compact. It is a high-quality material which is excellent in uniformity and coverage, and it is indeed possible to achieve the object of the present invention.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.

2‧‧‧Material optimization device

21‧‧‧ Body unit

211‧‧‧Shell

212‧‧‧ Cover

213‧‧‧Closed chamber

22‧‧‧Fluid supply unit

23‧‧‧Supercritical Catalytic Unit

231‧‧‧heater

232‧‧‧ pressurizer

24‧‧‧Power supply unit

25‧‧‧Electrode unit

251‧‧‧ positive electrode parts

252‧‧‧Negative electrode parts

Claims (7)

A material low temperature optimization device comprising: a body unit, comprising a casing, and a cover detachably disposed on the casing, the casing and the cover body together define a closed chamber; a fluid a supply unit for holding a predetermined amount of fluid in the sealed chamber; a supercritical catalytic unit comprising a heater disposed on the body unit for heating the fluid in the sealed chamber, and a heater a pressurizer disposed on the body unit for pressurizing the fluid in the sealed chamber, and the fluid in the closed chamber becomes a supercritical fluid by heating of the heater and pressurization of the pressurizer a power supply unit disposed outside the body unit for supplying power required for operation, the power supply unit having a positive pole and a negative pole, and an electrode unit disposed in the housing and including a positive electrode member and a negative electrode The positive electrode member and the negative electrode member are electrically connected to the positive electrode and the negative electrode of the power supply unit, respectively, and the positive electrode member is used to carry a material to be processed, by the supercritical It was dissolved impurities in the surface of the material to be treated, while taking advantage of the positive electrode member and the negative electrode member of the energization, such that the surface of the material to be treated is pulled out from the impurity atoms. The material cryogenic optimization device of claim 1, wherein the fluid is water. The material cryogenic optimization device of claim 1, wherein the fluid is a combination of carbon dioxide and water. The material cryogenic optimization device of claim 1, wherein the fluid is a combination of carbon dioxide and methanol. A material low temperature optimization method comprises: a preparation step, preparing a closed chamber, and providing a positive electrode member and a negative electrode member inside the sealed chamber, the positive electrode member and the negative electrode member respectively and a power supply unit One of the positive electrodes is electrically connected to a negative electrode; a first supercritical fluid cleaning step is to place a material to be treated on the positive electrode member, so that the sealed chamber contains a predetermined amount of supercritical fluid, The supercritical fluid dissolves the surface impurities of the material to be treated; a material optimization step is performed by the power supply unit, so that the positive electrode member and the negative electrode member are energized, so that the surface of the material to be processed is extracted by impurity atoms. And a second supercritical fluid cleaning step, wherein the supercritical fluid is used again to perform surface cleaning operation on the material to be treated which has been processed by the material optimization step. The material low temperature optimization method of claim 5, wherein the fluid is a combination of carbon dioxide and water. The material low temperature optimization method of claim 5, wherein the fluid is a combination of carbon dioxide and methanol.