TWI529004B - Material low temperature optimization method and device thereof - Google Patents
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本發明是有關於一種將材料進行處理之設備,特別是指一種使材料在低溫就可以進行優化的方法及裝置。 The present invention relates to an apparatus for treating materials, and more particularly to a method and apparatus for optimizing materials at low temperatures.
近年來,由於電子產業的蓬勃發展以及搭上行動裝置的普及,半導體技術持續發展已經是不爭的事實且變成不可或缺的角色,而且在現有的半導體產品的加工生產製程中,大部分要透過物理氣相沉積(PVD)、電弧式物理氣相沉積(PVD),或化學氣相沉積(Chemical Vaper Deposition)等沉積方法在一基板上沉積出一薄膜,再利用微影黃光(Lithography)與蝕刻(Etching)技術將欲成型之圖樣轉移至該基板上並堆疊出所需的立體結構(Architecture)。利用上述方法所製成之半導體產品的品質好壞大部分是決定於沉積過程中所形成的薄膜品質,以及製程中在半成品上所累積的靜電荷與髒污是否完全去除。在現有的製程中,當半成品在真空環境下完成薄膜沉積後,尚需破真空並移至一高溫爐管機台,再以大於攝氏1000度的高溫環境氣體(Ambient gas)通入該機台,以對形成有 薄膜之半成品進行恆溫處理(Anneal),以使材料內部之晶粒結構能夠均勻化。 In recent years, due to the booming development of the electronics industry and the popularity of mobile devices, the continuous development of semiconductor technology has become an indispensable fact and has become an indispensable role, and most of the existing semiconductor products are processed and manufactured. Physical vapor deposition (PVD), arc physical vapor deposition (PVD), or chemical vapor deposition (Chemical Vaper Deposition) deposition methods deposit a thin film on a substrate, and then use Lithography and The Etching technique transfers the pattern to be formed onto the substrate and stacks the desired three-dimensional structure. The quality of the semiconductor product produced by the above method is largely determined by the quality of the film formed during the deposition process, and whether the static charge and dirt accumulated on the semi-finished product in the process are completely removed. In the existing process, when the semi-finished product is deposited in a vacuum environment, it is necessary to break the vacuum and move to a high-temperature furnace tube machine, and then access the machine with a high-temperature ambient gas (Ambient gas) of more than 1000 degrees Celsius. With the formation of The semi-finished product of the film is subjected to an anneaal treatment to homogenize the grain structure inside the material.
但是薄膜材料在高溫長時間處理下,會有熱應力累積之問題,進而嚴重影響最終成品之可靠度,在業界對線寬要求日益嚴格的趨勢下,利用高溫長時間恆溫處理以得到高品質薄膜之技術日後將逐漸被淘汰,且在未來之軟性電子及可撓式電子等對可靠度有高度要求的電子產品中,更可能無法繼續被應用。且在未來之軟性基板的浪潮下,勢必會碰到另一種層層的考驗,最主要原因是所有軟性基板的玻璃轉化溫度都很低,所以發展低溫優化是一件迫不及待的任務,現在世界各國科技大廠,無不盡全力去發展在未來檯面上一定是大家注目與追逐的焦點,高溫優化在未來半導體製程會包括(1)熱處理時間長(長達數十小時)、(2)熱處理所需電能成本非常高、(3)熱處理所需溫度與熱溫度曲線(Thermal profile)不洽當會造成晶片扭曲、(4)製程參數調控窗口小、(5)熱處理之溫度造成電場雜質移位等諸多不利因素,在未來更精密的製程勢必被取代。 However, under the long-term treatment of high-temperature film materials, there is a problem of accumulation of thermal stress, which seriously affects the reliability of the final product. Under the trend of increasingly strict line width requirements in the industry, high-temperature long-time constant temperature treatment is used to obtain high-quality film. The technology will gradually be phased out in the future, and it is more likely that it will not continue to be used in future electronic products such as soft electronics and flexible electronics that are highly reliable. And in the wave of soft substrates in the future, it is bound to encounter another layer of testing. The main reason is that the glass transition temperature of all soft substrates is very low, so the development of low temperature optimization is an urgent task, now all over the world. Science and technology manufacturers, all efforts to develop in the future table must be the focus of attention and chase, high temperature optimization in the future semiconductor process will include (1) long heat treatment (up to tens of hours), (2) heat treatment The cost of electricity required is very high, (3) the temperature required for heat treatment and the thermal profile are not consistent, which may cause distortion of the wafer, (4) small control window of process parameters, (5) temperature of heat treatment, displacement of electric field impurities, etc. Many unfavorable factors are bound to be replaced in the more sophisticated process in the future.
除此之外,現有的製程技術對製程中髒污與靜電荷累積之問題尚無法提出完整且有效解決方法,此一問題在線寬及成品可靠度要求日益嚴格的趨勢下,勢必會對產品之良率及可靠度造成相當之影響。 In addition, the existing process technology can not provide a complete and effective solution to the problem of accumulation of dirt and static charge in the process. This problem is bound to be more stringent in the trend of online width and reliability of finished products. Yield and reliability have a considerable impact.
另外,半導體生產製程中常常會需要一些零件(parts)充當晶片的支撐物(Holder),在使用一段時日後表面會被侵蝕,如果有一些材料優化程序,此優化動作將材料 被侵蝕破壞之部分一一修復,則此零件支撐物就有機會重新回生產線繼續扮演原來角色與任務,如此可將零件支撐物其生命週期與使用年限無形中延長很多,這樣的概念可使製造成本降低同時也是材料優化另一應用。 In addition, some parts of the semiconductor manufacturing process often need to act as a support for the wafer. The surface will be eroded after a period of use. If there are some material optimization programs, this optimization action will be the material. If the parts damaged by erosion are repaired one by one, the support of the part will have the opportunity to return to the production line to continue to play the original role and task, so that the life support and service life of the part support can be extended invisibly. This concept can be manufactured. Cost reduction is also another application for material optimization.
因此,本發明之目的,即在提供一種能同時對材料進行除污且使材料低溫優化之材料低溫優化裝置。 Accordingly, it is an object of the present invention to provide a material cryogenic optimization apparatus that simultaneously decontaminates materials and optimizes the material at low temperatures.
本發明之另一目的,則是在於提供一種能使材料在低溫條件下同時進行除污及優化之材料低溫優化方法。 Another object of the present invention is to provide a low temperature optimization method for materials which can simultaneously perform decontamination and optimization of materials under low temperature conditions.
於是,本發明材料低溫優化裝置,包含一本體單元、一流體供應單元、一超臨界催化單元、一供電單元,以及一電極單元。該本體單元包括一殼體,以及一可分離地蓋設於該殼體之蓋體,該殼體與該蓋體並共同界定出一密閉腔室。該流體供應單元用以使該密閉腔室中盛裝有預定量之一流體。該超臨界催化單元包括一設置於該本體單元並用以對該密閉腔室內的流體進行加熱作用之加熱器,以及一設置於該本體單元並用以對該密閉腔室內的流體進行加壓作用之加壓器,藉該加熱器之加熱及該加壓器之加壓作用而使該密閉腔室內的流體成為超臨界流體。該供電單元設置於該本體單元外而用以供應運作所需電力,該供電單元具有一正極與一負極。該電極單元設置於該殼體內且包括一正電極件及一負電極件,該正電極件與該負電極件分別電連接於該供電單元之該正極與該負極,該正電極 件並用以承載一待處理材料,藉由所述超臨界流體溶解所述待處理材料表面雜質,並利用該正電極件與該負電極件之通電,使得所述待處理材料表面進行雜質原子拔離。 Therefore, the material low temperature optimization device of the present invention comprises a body unit, a fluid supply unit, a supercritical catalytic unit, a power supply unit, and an electrode unit. The body unit includes a housing and a cover detachably disposed on the housing, the housing and the cover together define a closed chamber. The fluid supply unit is configured to hold the sealed chamber with a predetermined amount of fluid. The supercritical catalytic unit includes a heater disposed on the body unit for heating the fluid in the sealed chamber, and a heater disposed on the body unit for pressurizing the fluid in the sealed chamber The pressure device causes the fluid in the closed chamber to become a supercritical fluid by the heating of the heater and the pressurization of the pressurizer. The power supply unit is disposed outside the body unit for supplying power required for operation, and the power supply unit has a positive pole and a negative pole. The electrode unit is disposed in the housing and includes a positive electrode member and a negative electrode member. The positive electrode member and the negative electrode member are respectively electrically connected to the positive electrode and the negative electrode of the power supply unit, and the positive electrode And carrying a material to be treated, dissolving the surface impurities of the material to be treated by the supercritical fluid, and energizing the negative electrode member by using the positive electrode member and the negative electrode member, so that the surface of the material to be processed is subjected to impurity atom extraction from.
另一方面,本發明材料低溫優化方法,包含一備置步驟、一第一次超臨界流體清洗步驟、一材料優化步驟,及一第二次超臨界流體清洗步驟。 In another aspect, the method for low temperature optimization of the material of the present invention comprises a preparation step, a first supercritical fluid cleaning step, a material optimization step, and a second supercritical fluid cleaning step.
在該備置步驟中,是備置一密閉腔室,並於該密閉腔室內部設置一正電極件及一負電極件,該正電極件與該負電極件分別與一供電單元之一正極與一負極電連接。 In the preparation step, a sealed chamber is disposed, and a positive electrode member and a negative electrode member are disposed inside the sealed chamber, and the positive electrode member and the negative electrode member are respectively connected to one positive electrode and one power supply unit The negative electrode is electrically connected.
在該第一次超臨界流體清洗步驟中,是將一待處理材料置於該正電極件上,使該密閉腔室內盛裝有預定量之一超臨界流體,藉由所述超臨界流體溶解並拔除所述待處理材料表面雜質。 In the first supercritical fluid cleaning step, a material to be treated is placed on the positive electrode member, and the sealed chamber is filled with a predetermined amount of a supercritical fluid, and the supercritical fluid is dissolved. The surface impurities of the material to be treated are removed.
在該材料優化步驟中,是藉由該供電單元供電,使得該正電極件與該負電極件通電,使得所述待處理材料表面進行雜質原子拔離作用。 In the material optimization step, the power supply unit is powered, so that the positive electrode member and the negative electrode member are energized, so that the surface of the material to be processed is subjected to impurity atom extraction.
在該第二次超臨界流體清洗步驟中,是再次利用所述超臨界流體對已經材料優化步驟處理後之所述待處理材料進行表面清潔作業。 In the second supercritical fluid cleaning step, the surface cleaning operation of the material to be treated which has been processed by the material optimization step is performed again by the supercritical fluid.
本發明之功效在於藉由所述超臨界流體溶解所述待處理材料表面雜質,同時利用該正電極件與該負電極件之通電,使得所述待處理材料表面帶正電之雜質原子移往該負電極件移動而脫離該正電極件,如此能夠在相對低 溫及相對高壓之環境下將所述待處理材料進行低溫優化,使該待處理材料之結構更加緻密,同時利用該正電極件於通電後作為犧牲陽極而對所述待處理材料進行雜質原子拔離作用,而使該待處理材料更加純化,成為均勻度(Uniformity)及覆蓋性(Step Coverage)均佳的高品質材料。 The invention has the effect of dissolving the surface impurities of the material to be treated by the supercritical fluid, and simultaneously energizing the positive electrode member and the negative electrode member, so that the positively charged impurity atoms on the surface of the material to be treated are moved to The negative electrode member moves away from the positive electrode member, so that it can be relatively low The material to be treated is optimized at a low temperature in a mild and relatively high-pressure environment to make the structure of the material to be treated more dense, and at the same time, the positive electrode member is used as a sacrificial anode to conduct impurity atom extraction on the material to be treated. The material to be treated is further purified, and is a high-quality material with good uniformity and uniform coverage.
2‧‧‧材料優化裝置 2‧‧‧Material optimization device
21‧‧‧本體單元 21‧‧‧ Body unit
211‧‧‧殼體 211‧‧‧Shell
212‧‧‧蓋體 212‧‧‧ Cover
213‧‧‧密閉腔室 213‧‧‧Closed chamber
22‧‧‧流體供應單元 22‧‧‧Fluid supply unit
23‧‧‧超臨界催化單元 23‧‧‧Supercritical Catalytic Unit
231‧‧‧加熱器 231‧‧‧heater
232‧‧‧加壓器 232‧‧‧ pressurizer
24‧‧‧供電單元 24‧‧‧Power supply unit
25‧‧‧電極單元 25‧‧‧Electrode unit
251‧‧‧正電極件 251‧‧‧ positive electrode parts
252‧‧‧負電極件 252‧‧‧Negative electrode parts
3‧‧‧待處理材料 3‧‧‧Materials to be processed
41‧‧‧備置步驟 41‧‧‧Preparation steps
42‧‧‧第一次超臨界流體清洗步驟 42‧‧‧First supercritical fluid cleaning step
43‧‧‧材料優化步驟 43‧‧‧Material optimization steps
44‧‧‧第二次超臨界流體清洗步驟 44‧‧‧Second Supercritical Fluid Cleaning Step
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一示意圖,說明本發明材料低溫優化裝置之一較佳實施例;圖2是一使用示意圖,說明該較佳實施例之使用態樣;圖3是一流程圖,說明本發明材料低溫優化方法之一較佳實施例;圖4是一示意圖,顯示非晶質材料之原子排列態樣;圖5是一示意圖,顯示多晶質材料之原子排列態樣;圖6是一示意圖,顯示單晶質材料之原子排列態樣;及圖7(a)至(c)是一晶相圖,分別輔助說明圖4至6。 Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic diagram illustrating a preferred embodiment of the material low temperature optimization apparatus of the present invention; FIG. 3 is a flow chart showing a preferred embodiment of the low temperature optimization method of the material of the present invention; and FIG. 4 is a schematic view showing the atomic arrangement of the amorphous material; Figure 5 is a schematic view showing an atomic arrangement of a polycrystalline material; Figure 6 is a schematic view showing an atomic arrangement of a single crystal material; and Figures 7(a) to (c) are a crystal phase diagram, Figure 4 to 6 are separately explained.
參閱圖1,本發明材料低溫優化裝置2包含一本體單元21、一流體供應單元22、一超臨界催化單元23、一供電單元24,以及一電極單元25。 Referring to FIG. 1, the material low temperature optimization device 2 of the present invention comprises a body unit 21, a fluid supply unit 22, a supercritical catalytic unit 23, a power supply unit 24, and an electrode unit 25.
該本體單元21包括一殼體211,以及一可分離 地蓋設於該殼體211之蓋體212,該蓋體212蓋置於該殼體211後,二者並共同界定出一密閉腔室213。 The body unit 21 includes a housing 211 and a separable The cover 212 is disposed on the cover 212 of the housing 211. The cover 212 is disposed behind the housing 211, and together define a closed chamber 213.
該流體供應單元22是用以使該密閉腔室213中盛裝有預定量之流體。所述流體是水,或二氧化碳與水之組合,或二氧化碳與甲醇之組合。在本較佳實施例中是以水做說明。 The fluid supply unit 22 is for holding the sealed chamber 213 with a predetermined amount of fluid. The fluid is water, or a combination of carbon dioxide and water, or a combination of carbon dioxide and methanol. In the preferred embodiment, water is used for illustration.
該超臨界催化單元23包括一設置於該本體單元21並用以對該密閉腔室213內的流體進行加熱作用之加熱器231,以及一設置於該本體單元21並用以對該密閉腔室213內的流體進行加壓作用之加壓器232,藉由啟動該加熱器231之加熱及該加壓器232之加壓作用,使得該密閉腔室213內的流體成為超臨界流體。 The supercritical catalytic unit 23 includes a heater 231 disposed on the body unit 21 for heating the fluid in the sealed chamber 213, and a heater 231 disposed on the body unit 21 for use in the sealed chamber 213. The pressurizing device 232 for pressurizing the fluid causes the fluid in the sealed chamber 213 to become a supercritical fluid by activating the heating of the heater 231 and the pressurization of the pressurizing device 232.
該供電單元24為直流電源且具有一正極與一負極。該供電單元24設置於該本體單元21外以供應運作所需電力。 The power supply unit 24 is a DC power source and has a positive pole and a negative pole. The power supply unit 24 is disposed outside the body unit 21 to supply power required for operation.
該電極單元25設置於該殼體211內且包括一正電極件251及一負電極件252,該正電極件251與該負電極件252分別與該供電單元24之正極、負極電連接。 The electrode unit 25 is disposed in the housing 211 and includes a positive electrode member 251 and a negative electrode member 252. The positive electrode member 251 and the negative electrode member 252 are electrically connected to the positive electrode and the negative electrode of the power supply unit 24, respectively.
參閱圖2、3,至於本發明材料低溫優化方法之一較佳實施例,包含一備置步驟41、一第一次超臨界流體清洗步驟42、一材料優化步驟43,及一第二次超臨界流體清洗步驟44。在該備置步驟41中,是備置一如上述之材料低溫優化裝置2。 Referring to Figures 2 and 3, a preferred embodiment of the low temperature optimization method of the present invention comprises a preparation step 41, a first supercritical fluid cleaning step 42, a material optimization step 43, and a second supercritical Fluid cleaning step 44. In the preparation step 41, a material low temperature optimization device 2 as described above is provided.
接著,在該第一次超臨界流體清洗步驟42中, 是將一待處理材料3置於該正電極件251上,將一待處理材料3置於該正電極件251上,將該蓋體212蓋設於該殼體211上後,將該密閉腔室213抽成真空狀態,隨後再利用該流體供應單元22將流體輸入該密閉腔室213內,待確認該密閉腔室213內的流體已達預定量後,隨即藉由調整該加熱器231之加熱溫度及該加壓器232所施加之壓力,使得該密閉腔室213內的流體成為超臨界流體。由於超臨界流體具有極高的溶解能力,可溶解沾附於待處理材料3表面之髒汙(contamination)、微塵粒(particle),及靜電荷等雜質。因而能藉由所述超臨界流體溶解所述待處理材料3表面雜質。 Then, in the first supercritical fluid cleaning step 42, A material to be treated 3 is placed on the positive electrode member 251, and a material to be treated 3 is placed on the positive electrode member 251. After the cover 212 is placed on the housing 211, the closed chamber is closed. The chamber 213 is evacuated, and then the fluid is supplied into the sealed chamber 213 by the fluid supply unit 22. After the fluid in the closed chamber 213 has been confirmed to be a predetermined amount, the heater 231 is adjusted. The heating temperature and the pressure applied by the pressurizer 232 cause the fluid in the closed chamber 213 to become a supercritical fluid. Since the supercritical fluid has an extremely high dissolving power, impurities such as contamination, particles, and static charges adhering to the surface of the material to be treated 3 can be dissolved. Thus, the surface impurities of the material to be treated 3 can be dissolved by the supercritical fluid.
之後,進行該材料優化步驟43,藉由該供電單元24供電,使得該電極單元25之正電極件251及負電極件252通電,此時正電極件252作為犧牲陽極而對待處理材料3進行異雜質拔離作用。 Then, the material optimization step 43 is performed, and the power supply unit 24 supplies power, so that the positive electrode member 251 and the negative electrode member 252 of the electrode unit 25 are energized. At this time, the positive electrode member 252 functions as a sacrificial anode and the material to be processed 3 is different. Impurity removal.
最後進行該第二次超臨界流體清洗步驟44,在此步驟中,是於材料優化步驟43後,使該電極單元25切換成斷電,再次利用超臨界流體對已經材料優化步驟處理43後之所述待處理材料3於加工過程所產生的電荷清理乾淨,處理完畢後,再打開蓋體212,取出所述待處理材料3即可。 Finally, the second supercritical fluid cleaning step 44 is performed. In this step, after the material optimization step 43, the electrode unit 25 is switched to be powered off, and the supercritical fluid is again used to process the material optimization step 43. The charge generated by the material to be processed 3 is cleaned after the processing, and after the processing is completed, the cover 212 is opened again, and the material to be processed 3 is taken out.
特別說明的是,前述材料優化的過程,可以由材料的原子或分子排列的觀點開始說明:非晶質(amorphous)(如圖4、圖7(a)所示)、多晶質 (polycrystalline)(如圖5、圖7(b)所示),及單晶質(single crystal)(如圖6、圖7(c)所示)材料為固體材料的三種普遍形式,每一種形式可由材料中具有規律性區域的尺度大小來界定。所謂規律性區域是指原子或分子大小的規律區域。以圖5、圖7(b)所示之多晶質材料而言,具有數十或數百個原子或分子大小規律性區域。但其中原子或分子排列方向並不一致之區域稱之微晶粒(grain)。晶粒之間以所謂晶界(grain boundary)互相分離。理想上,如圖6、圖7(c)所示之單晶質材料具有完整的原子或分子擁有週期性排列亦即將此區域擴充至整個材料空間,由於晶界會降低電子的特性表現,一般而言,單晶質材料會有比非單晶質(非晶質或多晶質)材料具有較佳電的特性。 In particular, the process of material optimization described above can be explained from the viewpoint of atomic or molecular arrangement of materials: amorphous (as shown in Figure 4, Figure 7 (a)), polycrystalline (polycrystalline) (as shown in Figure 5, Figure 7 (b)), and single crystal (as shown in Figure 6, Figure 7 (c)) materials are three common forms of solid materials, each form It can be defined by the size of the regular regions of the material. The so-called regular region refers to the regular region of the size of an atom or molecule. In the case of the polycrystalline material shown in Fig. 5 and Fig. 7(b), there are tens or hundreds of atomic or molecular size regular regions. However, the area in which the atoms or molecules are not aligned in the direction is called the grain. The grains are separated from each other by a so-called grain boundary. Ideally, the single crystal material shown in Fig. 6 and Fig. 7(c) has a complete atom or molecule having a periodic arrangement, that is, the region is expanded to the entire material space, since the grain boundary reduces the characteristic of the electron, generally In other words, single crystal materials have better electrical properties than non-single crystal (amorphous or polycrystalline) materials.
因此藉由上述本發明材料低溫優化方法及其裝置之設計,不但可使該待處理材料3在低溫條件仍進行優化過程,優化後的材料可以從非晶質(amorphous)轉變成多晶質(polycrystalline)或單晶質(single crystal)材料,也可能將多晶質(polycrystal-line)轉變成單晶質(single crystal)材料,原因是該材料低溫優化裝置2可以在低溫條件下仍使待處理材料3中之原子或分子規律性區域變大,也就是將待處理材料3原先原子或分子排列方向並不一致之微晶粒(grain)作修正的動作,除了將晶界之異質原子(以類似電鍍過程的犧牲陽極)被抽離至負極,且原子在足夠能量下進行重新排列,造成擁有週期性排列之區域可以擴充變大,此外,待處理材料3之整體表面也變得較平坦。 Therefore, by the above-mentioned low-temperature optimization method of the material of the present invention and the design of the device thereof, not only the material to be treated 3 can be optimized in a low temperature condition, but the optimized material can be transformed from amorphous to polycrystalline ( Polycrystalline) or single crystal materials may also convert polycrystal-line into a single crystal material because the material low temperature optimization device 2 can still be treated under low temperature conditions. The atomic or molecular regularity region in the processing material 3 becomes larger, that is, the grain in which the original atom or the molecular arrangement direction of the material to be treated is inconsistent is corrected, except for the heterogeneous atom of the grain boundary ( A sacrificial anode similar to the electroplating process is evacuated to the negative electrode, and the atoms are rearranged at a sufficient energy, so that the region having the periodic arrangement can be expanded and enlarged, and further, the entire surface of the material to be treated 3 becomes flat.
從而本發明針對材料低溫優化具有很多製程上的必要的優勢,包括:(1)熱處理快速,大約數小時即可達成、(2)熱處理溫度比室溫高許多但所需成本低很多、(3)熱處理所需溫度與熱溫度曲線(Thermal profile)容易控制且不會造成晶片任何幾何平坦度改變、(4)製程參數調控窗口大、(5)熱處理之溫度不會造成電場雜質移位,所以產品良率容易控制。 Therefore, the present invention has many necessary advantages for the low temperature optimization of the material, including: (1) rapid heat treatment, which can be achieved in a few hours, and (2) heat treatment temperature is much higher than room temperature but the cost is much lower, (3) The temperature and thermal temperature profile required for heat treatment are easy to control and do not cause any geometric flatness change of the wafer, (4) the process parameter control window is large, and (5) the temperature of the heat treatment does not cause the electric field impurities to shift, so Product yield is easy to control.
綜上所述,本發明材料低溫優化方法及其裝置藉由上述構造設計,利用所述超臨界流體溶解所述待處理材料3表面雜質,同時搭配該正電極件251與該負電極件252之通電,使得所述待處理材料3表面雜質脫離該正電極件251,如此能夠在相對低溫及相對高壓之環境下將該待處理材料3進行低溫優化,使該待處理材料3之結構更加緻密,成為均勻度及覆蓋性均佳的高品質材料,故確實能達成本發明之目的。 In summary, the low temperature optimization method and the device of the present invention are configured to dissolve surface impurities of the material to be treated 3 by using the supercritical fluid, and simultaneously match the positive electrode member 251 and the negative electrode member 252. The material of the material to be treated 3 is de-energized from the positive electrode member 251, so that the material to be treated 3 can be optimized at a low temperature in a relatively low temperature and a relatively high pressure environment, so that the structure of the material to be treated 3 is more compact. It is a high-quality material which is excellent in uniformity and coverage, and it is indeed possible to achieve the object of the present invention.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.
2‧‧‧材料優化裝置 2‧‧‧Material optimization device
21‧‧‧本體單元 21‧‧‧ Body unit
211‧‧‧殼體 211‧‧‧Shell
212‧‧‧蓋體 212‧‧‧ Cover
213‧‧‧密閉腔室 213‧‧‧Closed chamber
22‧‧‧流體供應單元 22‧‧‧Fluid supply unit
23‧‧‧超臨界催化單元 23‧‧‧Supercritical Catalytic Unit
231‧‧‧加熱器 231‧‧‧heater
232‧‧‧加壓器 232‧‧‧ pressurizer
24‧‧‧供電單元 24‧‧‧Power supply unit
25‧‧‧電極單元 25‧‧‧Electrode unit
251‧‧‧正電極件 251‧‧‧ positive electrode parts
252‧‧‧負電極件 252‧‧‧Negative electrode parts
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