TWI543236B - Substrate processing apparatus - Google Patents

Description

Substrate processing device

The present invention relates to a substrate processing apparatus for processing a substrate.

Since the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as "substrate"), various processes have been applied to the substrate using a variety of substrate processing apparatuses. For example, the surface of the substrate is subjected to etching or the like by supplying the chemical liquid to the substrate on which the pattern of the resist is formed on the surface. Further, after the etching process is completed, the process of removing the resist on the substrate or cleaning the substrate is also performed.

In the substrate processing apparatus of Japanese Laid-Open Patent Publication No. 2014-67778 (Document 1), a top plate which is a substantially disk-shaped shielding plate covering the upper surface of the substrate is provided. The lower surface of the top plate is provided with a substrate pressing portion that presses the substrate supported by the substrate supporting portion from the upper side, and an engaging portion that engages the substrate supporting portion and the top plate. The top plate rotates together with the substrate supporting portion in a state of being engaged with the substrate supporting portion when the chemical liquid is supplied to the substrate for processing.

However, since the shielding plate as in Document 1 is in contact with the chemical liquid used for the treatment of the substrate, it is formed of a resin having high resistance or the like. When the shielding plate is large, in order to prevent deformation of the shielding plate due to its own weight, a disk-shaped metal core material is provided inside the disk-shaped shielding plate made of resin. In this case, the substrate pressing portion and the engaging portion (that is, the connecting portion between the connecting substrate supporting portion and the shielding plate) are connected to the outer peripheral edge portion of the metal core member.

On the other hand, in the substrate processing apparatus as described in Document 1, there is a case where the chemical solution is processed while heating the substrate. At this time, since the temperature of the shielding plate also rises, when the metal core material as described above is provided, the metal core material thermally expands in the circumferential direction to warp the shielding plate in the vertical direction. As described above, when the shield plate is thermally deformed, it is considered that the relative position of the substrate pressing portion and the connecting portion connected to the metal core member is changed, and the substrate pressing portion cannot be sufficiently pressed against the substrate.

The present invention is directed to a substrate processing apparatus for processing a substrate, and an object thereof is to suppress thermal deformation of a shielding plate and to suppress a change in a relative position between a connecting portion and a substrate pressing portion.

A substrate processing apparatus according to the present invention includes: a substrate supporting portion that supports the substrate from a lower side in a horizontal state; a shielding plate that is disposed to face the upper surface of the substrate and that is coupled to the substrate supporting portion; and a substrate rotating mechanism The substrate is rotated together with the substrate supporting portion and the shielding plate around a central axis of the vertical direction. The shielding plate includes a plate-shaped shielding plate main portion having a surface covering the upper surface of the substrate. a lower surface; a shielding plate reinforcing portion provided inside or above the shielding plate main portion; and a connecting portion connected to the substrate supporting portion on a radially outer side of the outer periphery of the substrate; and a substrate pressing The abutting portion presses the substrate from the upper side in the vicinity of the outer peripheral edge of the substrate; the shielding plate reinforcing portion includes a central portion; and a plurality of peripheral portions respectively from the central portion to the outer periphery of the substrate The vicinity is expanded radially outward, and is apart from each other in the circumferential direction; the connecting portion and the substrate pressing portion are disposed on A radially outer end portion of the plurality of peripheral.

According to the substrate processing apparatus, it is possible to suppress thermal deformation of the shield plate and suppress The relative position of the connecting portion and the substrate pressing portion changes.

In a preferred embodiment of the present invention, the connecting portion includes a plurality of connecting elements, and the substrate pressing portion includes a plurality of substrate pressing elements, and the peripheral portions of the connecting elements are disposed in the plurality of peripheral portions The peripheral portion and the peripheral portion in which the substrate pressing elements are disposed are different from each other.

In still another preferred embodiment of the present invention, the entire system of the shielding plate reinforcing portion is covered by the shielding plate main portion.

In another preferred embodiment of the present invention, the shielding plate reinforcing portion is formed of a carbon material, and the shielding plate reinforcing portion is fixed to an upper surface of the shielding plate main portion.

According to still another preferred embodiment of the present invention, the heating unit for heating the substrate is further provided.

The above and other objects, features, aspects and advantages of the present invention will become apparent from the accompanying drawings.

1‧‧‧Substrate processing unit

9‧‧‧Substrate

10‧‧‧Control Department

12‧‧‧ chamber

15‧‧‧Substrate rotation mechanism

16‧‧‧ Liquid Department

17‧‧‧ Cover

18‧‧‧Gas and Liquid Supply Department

19‧‧‧ gas and liquid discharge

81‧‧‧ annular opening

91‧‧‧ (substrate) upper surface

92‧‧‧ (substrate) lower surface

100‧‧‧Expanding confined spaces

120‧‧‧chamber space

121‧‧‧ chamber body

122‧‧‧Cell cover

123, 123a‧‧‧ top board

131‧‧‧Case opening and closing mechanism

141‧‧‧Substrate support

142‧‧‧Substrate pressure part

151‧‧‧ stator

152‧‧‧Rotor Department

160‧‧‧Side space

161‧‧‧ Cup

162‧‧‧ Cup mobile agency

163‧‧‧ Cup Opposite Department

164‧‧‧Outer side wall (expansion tube)

165‧‧‧Containment recess

166‧‧‧Recovery

180‧‧‧heating nozzle

181‧‧‧ upper nozzle

182‧‧‧ lower nozzle

183, 813‧‧ ‧ drug supply source

184, 814‧‧‧ pure water supply source

185, 815‧‧‧IPA supply source

187‧‧‧2nd gas supply source

188‧‧‧1st gas supply source

191‧‧‧1st discharge road

192‧‧‧2nd discharge road

193, 197‧‧ ‧ gas-liquid separation department

194‧‧‧Outside exhaust

195‧‧‧Drug Recycling Department

196, 199‧‧ ‧ drainage department

198‧‧‧Inside exhaust

210‧‧‧Bottom of the chamber

211‧‧‧ bottom central (below opposite)

212‧‧‧Bottom side wall

213‧‧‧ring bottom

214‧‧‧The side wall of the chamber

215‧‧‧Bottom outer wall

216‧‧‧ base

217‧‧‧Lower annular space

218‧‧‧Export

222‧‧‧ Board Maintenance Department

223‧‧‧ Tube

224, 239‧‧‧Flange

227‧‧‧Top cover

228‧‧‧ Covering the tube

231‧‧‧Shaping plate body

232, 232a‧‧ ‧ shield plate reinforcement

233‧‧‧Connecting Department

237‧‧‧ Keeped Department

237a‧‧‧Retained elements

238‧‧‧ Pillars

241‧‧‧1st engagement

242‧‧‧2nd merging department

251, 252‧‧‧ end seal

311‧‧‧ (the upper part of the shield body)

312‧‧‧ (the upper part of the shield body)

321‧‧‧ Central Department

322, 322a‧‧‧ peripherals

323‧‧‧slit

411‧‧‧1st contact

413‧‧‧Support base

421‧‧‧2nd contact

611‧‧‧ cup side wall

612‧‧‧ cup upper face

J1‧‧‧ central axis

S11~S16‧‧‧Steps

Fig. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment.

2 is a cross-sectional view of a substrate processing apparatus.

Fig. 3 is a plan view of the substrate supporting portion.

Figure 4 is a bottom view of the top panel.

Figure 5 is a cross-sectional view of the top plate.

Fig. 6 is a bottom view of the shield plate reinforcing portion.

Fig. 7 is a block diagram showing a gas-liquid supply unit and a gas-liquid discharge unit.

Fig. 8 is a view showing a processing flow in the substrate processing apparatus.

Figure 9 is a cross-sectional view of a substrate processing apparatus.

Figure 10 is a cross-sectional view of another top plate.

Figure 11 is a bottom plan view of another shield plate reinforcing portion.

Fig. 12 is a bottom view of another shield plate reinforcing portion.

Fig. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a one-chip device in which a processing liquid is supplied to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"), and the substrate 9 is processed one by one. In FIG. 1, in the cross section of the configuration of one portion of the substrate processing apparatus 1, the parallel oblique lines are omitted (the same applies to the other cross-sectional views).

The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening and closing mechanism 131, a substrate supporting portion 141, a substrate rotating mechanism 15, a liquid receiving portion 16, and a cover 17. The outer cover 17 covers the upper side and the side of the chamber 12.

The chamber 12 is provided with a chamber body 121 and a chamber cover portion 122. The chamber 12 has a substantially cylindrical shape centering on the central axis J1 in the vertical direction. The chamber body 121 is provided with a chamber bottom portion 210 and a chamber side wall portion 214. The bottom portion 210 of the chamber includes a bottom portion 211 having a substantially disk shape, and a bottom inner wall portion 212 having a substantially cylindrical shape extending downward from an outer edge portion of the bottom center portion 211; a substantially annular plate-shaped ring shape a bottom portion 213 extending radially outward from a lower end of the bottom inner side wall portion 212; a substantially cylindrical bottom outer side wall portion 215 extending upward from an outer edge portion of the annular bottom portion 213; and a substantially annular plate shape The base portion 216 extends radially outward from the upper end portion of the bottom outer side wall portion 215.

The chamber side wall portion 214 has a substantially cylindrical shape centering on the central axis J1. The chamber side wall portion 214 protrudes upward from the inner edge portion of the base portion 216. Cavity The member of the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as will be described later. In the following description, the space surrounded by the chamber side wall portion 214, the bottom outer side wall portion 215, the annular bottom portion 213, the bottom inner side wall portion 212, and the outer edge portion of the bottom central portion 211 is referred to as a lower annular space. 217. At the bottom of the lower annular space 217, a discharge port 218 for the gas and liquid in the discharge chamber 12 is provided.

In the case where the substrate 9 is supported by the substrate supporting portion 141, the lower surface 92 of the substrate 9 is opposed to the upper surface of the bottom central portion 211 of the chamber bottom portion 210. In the following description, the bottom center portion 211 of the chamber bottom portion 210 is referred to as "lower facing portion 211".

The chamber cover portion 122 has a substantially covered cylindrical shape perpendicular to the central axis J1 and includes an upper portion of the chamber 12. The chamber cover portion 122 includes a substantially disk-shaped top cover portion 227 and a substantially cylindrical cover lower tubular portion 228 that extends downward from the outer peripheral edge of the top cover portion 227. The chamber cover 122 closes the upper opening of the chamber body 121. In Fig. 1, the state in which the chamber cover portion 122 is separated upward from the chamber body 121 is shown. As shown in FIG. 2, when the chamber cover portion 122 closes the upper portion of the chamber body 121, the lower end portion of the lower lid portion 228 is in contact with the upper portion of the chamber side wall portion 214.

The chamber opening and closing mechanism 131 shown in Fig. 1 moves the chamber cover portion 122, which is a movable portion of the chamber 12, in the vertical direction with respect to the other portion of the chamber 12, that is, the chamber body 121. The chamber opening and closing mechanism 131 is a lid elevating mechanism that elevates and lowers the chamber lid portion 122. When the chamber lid portion 122 is moved in the vertical direction by the chamber opening and closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber lid portion 122. In the substrate processing apparatus 1, as shown in FIG. 2, the chamber cover portion 122 is in contact with the chamber body 121 to close the upper opening, and is further pressed by the chamber cover portion 122 toward the chamber body 121. The internal space of the chamber 12, that is, the chamber space 120 is hermetically sealed.

FIG. 3 is a plan view showing the substrate supporting portion 141. In Fig. 3, the substrate 9 is displayed together with a two-dot chain line. As shown in FIGS. 1 and 3, the substrate supporting portion 141 is a substantially annular member centered on the central axis J1. The substrate supporting portion 141 is disposed in a space between the chamber cover portion 122 and the chamber body 121, that is, the chamber space 120, and supports the outer peripheral portion of the substrate 9 from the lower side in a horizontal state (ie, including the outer periphery of the periphery) Nearby parts). In other words, the substrate 9 is supported by the substrate supporting portion 141 in a state in which the upper surface 91 is oriented upward on the central axis J1. The lower facing portion 211 is disposed on the radially inner side of the substrate supporting portion 141.

The substrate supporting portion 141 includes a supporting portion base 413 , a plurality of first contact portions 411 , and a plurality of first engaging portions 241 . The support base 413 is a substantially annular plate-shaped member centered on the central axis J1. The plurality of first contact portions 411 are arranged in the circumferential direction around the central axis J1. Each of the first contact portions 411 is a substantially columnar member (ie, a support pin) that protrudes upward from the upper surface of the support portion base 413. The plurality of first contact portions 411 are a plurality of substrate supporting elements that support the outer edge portion of the substrate 9 from the lower side.

The plurality of first engaging portions 241 are disposed radially outward of the outer periphery of the substrate 9 and are disposed in the circumferential direction about the central axis J1. Each of the first engaging portions 241 is a substantially cylindrical member (that is, an engaging pin) that protrudes upward from the upper surface of the support portion base 413. The plurality of first engaging portions 241 are used to connect the top plate 123 and the substrate supporting portion 141 as will be described later. The plurality of first engaging portions 241 connect a plurality of connecting elements of the top plate 123 and the substrate supporting portion 141. In FIG. 1, the first engagement portion 241 and the first contact portion 411 are drawn in the same cross section for convenience of illustration. However, in the example shown in FIG. 3, the first engagement portion 241 and the first contact portion are provided. 411 is not on the same section. The plurality of first engaging portions 241 are in contact with the plurality of first contact portions 411 They are arranged at different positions in the circumferential direction. In the example shown in FIG. 3, six first contact portions 411 and three first engagement portions 241 are provided on the support base 413.

4 is a bottom view showing the top plate 123. In Fig. 4, the substrate 9 is displayed together with a two-dot chain line. As shown in FIGS. 1, 2, and 4, the top plate 123 has a substantially annular plate shape perpendicular to the central axis J1. The top plate 123 is housed in the chamber space 120 which is a sealed space, and is disposed below the chamber cover portion 122 and above the substrate supporting portion 141. The top plate 123 has an opening in the center. As shown in FIG. 2, the upper surface 91 of the substrate 9 supported by the substrate supporting portion 141 is in the chamber space 120, opposed to the lower surface 312 of the top plate 123 perpendicular to the central axis J1. The top plate 123 shields the shielding plate above the substrate 9. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer periphery of the top plate 123 is located radially outward of the outer periphery of the substrate 9 over the entire circumference.

Fig. 5 is a cross-sectional view showing a part of the top plate 123 in an enlarged manner. As shown in FIGS. 1 , 4 , and 5 , the top plate 123 includes a shielding plate main body portion 231 , a shielding plate reinforcing portion 232 , a substrate pressing portion 142 , a connecting portion 233 , and a held portion 237 . The shield main body portion 231 is a substantially annular plate-shaped member and has the lower surface 312 covering the upper surface 91 of the substrate 9. The shield main body portion 231 is formed, for example, of a resin having high resistance. The shield main body portion 231 is formed of, for example, a fluororesin such as Teflon (registered trademark). The shielding plate reinforcing portion 232 is a substantially plate-shaped member and is fixed to the inside of the shielding plate main body portion 231 to support the shielding plate main body portion 231. In the example shown in FIG. 5, the entire system of the shield plate reinforcing portion 232 is covered by the shield main body portion 231. The shielding plate reinforcing portion 232 is formed of, for example, a metal having high strength and heat resistance. Specifically, the shield plate reinforcing portion 232 is formed of titanium (Ti) or stainless steel. The shielding plate reinforcing portion 232 has a higher strength than the shielding plate main portion 231, and suppresses deformation of the shielding plate main body portion 231 due to its own weight.

As shown in FIG. 2, the substrate pressing portion 142 is pressed against the substrate 9 from the upper side at the outer peripheral edge portion of the substrate 9 (that is, a portion including the outer periphery of the outer peripheral edge). As shown in FIGS. 1 , 2 , and 4 , the substrate pressing portion 142 includes a plurality of second contact portions 421 . The plurality of second contact portions 421 are arranged in the circumferential direction around the central axis J1. Each of the second contact portions 421 is a substantially cylindrical member (ie, a pressing pin) that protrudes downward from the lower surface 312 of the shield main body portion 231. The plurality of second contact portions 421 are pressed against the plurality of substrate pressing elements on the outer peripheral edge portion of the substrate 9 from the upper side. In FIGS. 1 and 2, the second contact portion 421 and the first contact portion 411 are drawn on the same cross section for convenience of illustration. Actually, the plurality of second contact portions 421 and a plurality of first contact portions are actually provided. 411 is arranged at different positions in the circumferential direction. In the following description, the substrate supporting portion 141 and the substrate pressing portion 142 are collectively referred to as a "substrate holding portion".

As shown in FIG. 2, the connection portion 233 is connected to the substrate support portion 141 so as to be radially outward of the outer periphery of the substrate 9. Thereby, the top plate 123 is connected to the substrate support portion 141. As shown in FIG. 1 , FIG. 2 and FIG. 4 , the connection portion 233 includes a second engagement portion 242 which is a plurality of connection elements. The plurality of second engaging portions 242 are disposed radially outward of the outer periphery of the substrate 9 and are disposed in the circumferential direction about the central axis J1. Each of the second engaging portions 242 is a substantially cylindrical member (ie, a snap pin) that protrudes downward from the lower surface 312 of the shield main body portion 231. A recessed portion that is recessed upward is provided on the lower end surface of each of the second engaging portions 242. As shown in FIG. 2, the top plate 123 is coupled to the substrate supporting portion 141 by fitting the upper end portion of the first engaging portion 241 to the concave portion of the second engaging portion 242. The plurality of second engaging portions 242 and the plurality of second contact portions 421 are disposed at different positions in the circumferential direction. In the example shown in FIG. 4, the second top contact portion 421 and the three second engagement portions 242 which are smaller than the second contact portion 421 are provided on the top plate 123.

FIG. 6 is a bottom view showing the shield plate reinforcing portion 232. In Fig. 6, the outline of the shield main body portion 231 around the shield plate reinforcing portion 232 is shown by a two-dot chain line (the same applies to Figs. 11 and 12). The shielding plate reinforcing portion 232 includes a central portion 321 and a plurality of peripheral portions 322. The central portion 321 has a substantially annular plate shape centering on the central axis J1. The plurality of peripheral portions 322 are substantially strip-shaped members that extend from the central portion 321 to the outer peripheral edge portion of the substrate 9 toward the outside in the radial direction. Each of the peripheral portions 322 extends substantially linearly outward in the radial direction. The plurality of peripheral portions 322 are spaced apart from each other in the circumferential direction centering on the central axis J1. The radially outer end portions of the peripheral portions 322 are located on the outer peripheral portion of the shield main body portion 231 (i.e., the portion near the outer peripheral edge). The central portion 321 and the plurality of peripheral portions 322 are integrally connected. In the example shown in FIG. 6, the peripheral portions 322 of the 15 are radially expanded from the central portion 321 to the outer periphery of the outer periphery of the substrate 9.

The connection portion 233 and the substrate pressing portion 142 are disposed at the radially outer end portions of the plurality of peripheral portions 322. Specifically, the plurality of second contact portions 421 of the plurality of second engagement portions 242 and the substrate pressing portions 142 of the connection portion 233 are disposed at the radially outer end portions of the plurality of peripheral portions 322 . As shown in FIG. 5, each of the second engaging portions 242 and the second contact portions 421 are inserted into the through holes penetrating the shielding plate main body portion 231 and the peripheral portion 322 in the vertical direction from the lower side, and are formed in the peripheral portion 322. The upper side is fixed by a nut or the like, and is joined (ie, joined) to the peripheral portion 322.

As shown in FIG. 6, in the plurality of peripheral portions 322, it is preferable that the peripheral portion 322 in which each of the second engaging portions 242 is disposed and the peripheral portion 322 in which the second contact portions 421 are disposed are different from each other. In other words, the second contact portion 421 and the other second engagement portion 242 are not disposed in the peripheral portion 322 in which the second engagement portions 242 are disposed. Further, the second engaging portion 242 is not disposed in the peripheral portion 322 in which each of the second contact portions 421 is disposed. And other second contact portions 421. In the example shown in FIG. 6, only one second engagement portion 242 or the second contact portion 421 is disposed at each end portion of the peripheral portion 322 of the fifteen.

As shown in FIG. 1, the held portion 237 protrudes upward from the upper surface 311 of the shield main body portion 231. In the state shown in FIG. 1, the top plate 123 is supported by the holding portion 237 suspended by the chamber cover portion 122. The chamber cover portion 122 has a substantially annular plate holding portion 222 at the center portion. The plate holding portion 222 includes a cylindrical portion 223 having a substantially cylindrical shape centered on the central axis J1, and a flange portion 224 having a substantially annular plate shape centering on the central axis J1. The flange portion 224 is expanded radially inward from the lower end of the tubular portion 223.

The held portion 237 includes a plurality of held elements 237a. The plurality of held elements 237a are arranged at substantially equal angular intervals in the circumferential direction around the central axis J1. Each of the retained elements 237a includes a pillar portion 238 that extends upward from the shield main body portion 231, and a flange portion 239 that extends radially outward from the upper end of the pillar portion 238. The pillar portion 238 is located radially inward of the tubular portion 223 of the plate holding portion 222. The flange portion 239 is located above the flange portion 224 of the plate holding portion 222 and faces the flange portion 224 in the vertical direction. The lower surface of the flange portion 239 of the held portion 237 is attached to the upper surface of the flange portion 224 of the plate holding portion 222, so that the top plate 123 can be suspended from the chamber cover portion 122. On the chamber cover portion 122.

The substrate rotating mechanism 15 is a so-called hollow motor. The substrate rotating mechanism 15 includes a stator portion 151 having an annular shape centered on the central axis J1 and a rotor portion 152 having an annular shape. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded, for example, with polytetrafluoroethylene (PTFE). The rotor portion 152 is disposed in the chamber space 120 of the chamber 12 and disposed in the lower annular space 217. Above the rotor portion 152 via The support base 413 of the substrate supporting portion 141 is attached to the connecting member. The support base 413 is disposed above the rotor portion 152.

The stator portion 151 is disposed outside the chamber 12 and disposed around the rotor portion 152. In other words, the stator portion 151 is disposed on the outer side of the chamber space 120 and disposed on the radially outer side of the rotor portion 152. In the present embodiment, the stator portion 151 is fixed to the bottom outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is located below the liquid receiving portion 16. The stator portion 151 includes a plurality of coils arranged in a circumferential direction around the central axis J1.

By supplying a current to the stator portion 151, a rotational force centering on the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor portion 152 is rotated in a horizontal state centering on the central axis J1. By operating the magnetic force between the stator portion 151 and the rotor portion 152, the rotor portion 152 is floated in the chamber 12 without directly or indirectly contacting the chamber 12, and the substrate 9 is centered on the central axis J1. The substrate supporting portion 141 is rotated together in a floating state. As shown in FIG. 2, in a state in which the top plate 123 is coupled to the substrate supporting portion 141, the substrate 9 is rotated about the central axis J1 together with the substrate supporting portion 141 and the top plate 123 by the substrate rotating mechanism 15.

As shown in FIG. 1, the liquid receiving portion 16 includes a cup portion 161, a cup moving mechanism 162, a cup opposing portion 163, and an outer side wall portion 164. The cup portion 161 has an annular shape centering on the central axis J1 and is located radially outward of the chamber 12 over the entire circumference. The cup moving mechanism 162 moves the cup portion 161 in the vertical direction. In other words, the cup moving mechanism 162 relatively moves the cup portion 161 in the vertical direction with respect to the chamber body 121. The cup moving mechanism 162 is disposed on the radially outer side of the cup portion 161. The cup moving mechanism 162 is disposed in a circumferential direction different from the above-described chamber opening and closing mechanism 131. Set. The cup opposing portion 163 is located below the cup portion 161 and faces the cup portion 161 in the up and down direction. The cup opposing portion 163 forms part of a member of the chamber sidewall portion 214. The cup opposing portion 163 has an annular liquid receiving recess 165 located radially outward of the chamber side wall portion 214. A recovery port 166 for recovering the treatment liquid to be received by the cup portion 161 or the like of the liquid receiving portion 16 is provided at the bottom of the liquid-receiving recess 165. The discharge port 218 described above is provided separately from the recovery port 166.

The cup portion 161 includes a cup side wall portion 611 and a cup upper surface portion 612. The cup side wall portion 611 has a substantially cylindrical shape centering on the central axis J1. The cup upper surface portion 612 has a substantially annular plate shape centering on the central axis J1, and extends from the upper end portion of the cup side wall portion 611 toward the radially inner side and the radially outer side. In the state shown in FIG. 1, the lower portion of the cup side wall portion 611 is located in the liquid receiving recess 165 of the cup opposing portion 163.

The outer wall portion 164 has a substantially cylindrical shape centering on the central axis J1 and is expandable and contractible in the vertical direction. In the example shown in FIG. 1, the outer side wall portion 164 is a telescopic tube in which a plurality of circumferentially-shaped convex fold lines and a plurality of circumferentially-shaped concave fold lines are alternately arranged in the vertical direction. In the following description, the outer side wall portion 164 is referred to as a "expansion tube 164". The bellows 164 is located radially outward of the chamber side wall portion 214 and the cup side wall portion 611, and is disposed around the chamber side wall portion 214 and the cup side wall portion 611 over the entire circumference. The bellows 164 is formed of a material that does not pass a gas or a liquid.

The upper end portion of the bellows 164 is connected to the lower surface of the outer edge portion of the cup upper surface portion 612 of the cup portion 161 over the entire circumference. In other words, the upper end portion of the bellows 164 is indirectly connected to the cup side wall portion 611 via the cup upper surface portion 612. The connection between the extension tube 164 and the upper surface portion 612 is sealed to prevent the passage of gas or liquid. The lower end of the bellows 164 is indirectly connected to the chamber body 121 via the cup opposing portion 163. Even if the lower end portion of the bellows 164 is connected to the cup facing portion 163, gas or liquid can be prevented. The passage of the body. The bellows 164 is deformed following the movement of the cup portion 161 by the cup moving mechanism 162 (that is, the relative movement of the cup portion 161 with respect to the chamber body 121), and the height in the vertical direction is changed.

A substantially cylindrical upper nozzle 181 centering on the central axis J1 is attached to the center of the chamber cover 122. The upper nozzle 181 is fixed to the chamber cover portion 122 opposite to the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 is an opening that can be inserted into the center of the top plate 123. A lower nozzle 182 is mounted to the center of the facing portion 211 below the bottom portion 210 of the chamber. The lower nozzle 182 has a liquid ejection port at the center and faces the central portion of the lower surface 92 of the substrate 9.

Further, a plurality of heating nozzles 180 are further attached to the opposing portion 211. The plurality of heating nozzles 180 are disposed at substantially equiangular intervals, for example, in the circumferential direction around the central axis J1. The plurality of heating nozzles 180 are supplied to the substrate 9 to supply a fluid supply portion of a fluid having a higher temperature than the substrate 9, or may be a heating portion for heating the substrate 9. In the example shown in FIG. 1, a heated gas (hereinafter referred to as "heated gas") is supplied from the heating nozzle 180 toward the substrate 9. In other words, the heating nozzle 180 is supplied to the heating gas supply unit that heats the heating gas of the substrate 9. The self-heating nozzle 180 may also be supplied with, for example, a heated liquid or a mixed fluid of a heated gas and a liquid.

FIG. 7 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19. The gas-liquid supply unit 18 further includes a chemical liquid supply source 183, a pure water supply source 184, an IPA (isopropyl alcohol) supply source 185, and a first one, in addition to the upper nozzle 181, the lower nozzle 182, and the heating nozzle 180. The gas supply source 188 and the second gas supply source 187. These supply sources may be provided in the substrate processing apparatus 1 or may be provided outside the substrate processing apparatus 1.

The chemical solution supply source 183 is connected to the upper nozzle 181 via a valve. The pure water supply source 184 and the IPA supply source 185 are also connected to the upper nozzle 181 via valves, respectively. The first gas supply source 188 is also connected to the upper nozzle 181 via a valve. The lower nozzle 182 is connected to the pure water supply source 184 via a valve. A plurality of heating nozzles 180 are connected to the second gas supply source 187 via a valve.

The first discharge passage 191 is connected to the recovery port 166 of the liquid receiving recess 165 provided in the liquid receiving portion 16, and the first discharge passage 191 is connected to the gas-liquid separation portion 193. The gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical liquid recovery unit 195, and the liquid discharge unit 196 via valves. The second discharge path 192 is connected to the discharge port 218 provided in the chamber body 121, and the second discharge path 192 is connected to the gas-liquid separation unit 197. The gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the liquid discharge unit 199 via valves, respectively. The respective configurations of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 are controlled by the control unit 10. The chamber opening and closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.

The chemical solution supplied from the chemical solution supply source 183 to the upper nozzle 181 is ejected from the ejection opening at the front end of the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9. The chemical liquid supplied from the chemical solution supply source 183 to the substrate 9 via the upper nozzle 181 is, for example, a treatment liquid for treating the substrate by a chemical reaction, a polymer removal liquid, or a hydrofluoric acid or a tetramethylammonium hydroxide aqueous solution. Etching solution.

The pure water supply source 184 supplies pure water (DIW: deionized water) to the substrate 9 via the upper nozzle 181 and the lower nozzle 182. The pure water supplied from the pure water supply source 184 to the upper nozzle 181 is ejected from the ejection opening at the front end of the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9. The pure water supplied from the pure water supply source 184 to the lower nozzle 182 is directed from the discharge port at the front end of the lower nozzle 182 toward the substrate 9 The lower part of the surface 92 is spouted. The isopropyl alcohol (IPA) supplied from the IPA supply source 185 to the upper nozzle 181 is ejected from the ejection opening at the front end of the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9.

The above-mentioned chemical solution, pure water, and IPA are collectively referred to as a treatment liquid, and the chemical solution supply source 813, the pure water supply source 814, the IPA supply source 815, and the upper nozzle 181 are included in the treatment of the supply processing liquid on the upper surface 91 of the substrate 9. Liquid supply unit. In the substrate processing apparatus 1, another supply source for supplying the chemical liquid, the pure water, and the processing liquid other than the IPA may be included in the processing liquid supply unit.

The second gas supply source 187 supplies the heating gas to the lower surface 92 of the substrate 9 via a plurality of heating nozzles 180. In the example shown in Fig. 7, for example, an inert gas such as a nitrogen (N ₂ ) gas is supplied from the heating nozzle 180. Further, in the case where the heated inert gas is supplied from the heating nozzle 180, the explosion-proof countermeasure in the substrate processing apparatus 1 can be simplified or unnecessary. The first gas supply source 188 supplies gas to the upper surface 91 of the substrate 9 via the upper nozzle 181. In the example shown in Fig. 7, for example, an inert gas such as nitrogen (N ₂ ) gas is supplied from the discharge port at the front end of the upper nozzle 181. The discharge port is disposed, for example, around the discharge port of the upper nozzle 181.

FIG. 8 is a view showing a processing flow of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 1, the substrate cover portion 122 is separated from the chamber body 121 and positioned above, and the cup portion 161 is separated from the chamber cover portion 122 to be positioned below, and the substrate 9 is attached. It is carried into the chamber 12 by the external transfer mechanism, and is supported by the substrate support portion 141 from the lower side (step S11). Hereinafter, the state of the chamber 12 and the cup portion 161 shown in Fig. 1 will be referred to as an "open state". The opening between the chamber cover portion 122 and the chamber side wall portion 214 is an annular shape centering on the central axis J1, and is hereinafter referred to as "annular opening 81". In the substrate processing apparatus 1, by the chamber cover portion 122 The chamber body 121 is separated, and an annular opening 81 is formed around the substrate 9 (i.e., radially outward). In step S11, the substrate 9 is carried in through the annular opening 81.

When the substrate 9 is carried in, the cup portion 161 rises from the position shown in FIG. 1 to the position shown in FIG. 9, and is located radially outward of the annular opening 81 over the entire circumference. In the following description, the state of the chamber 12 and the cup portion 161 shown in FIG. 9 is referred to as a "first sealed state". The position of the cup portion 161 shown in FIG. 9 is referred to as a "liquid holding position", and the position of the cup portion 161 shown in FIG. 1 is referred to as a "retracted position". The cup moving mechanism 162 moves the cup portion 161 between the liquid receiving position on the radially outer side of the annular opening 81 in the vertical direction and the retracted position lower than the liquid receiving position. As shown in FIG. 9, at the liquid receiving position, the cup portion 161 of the liquid receiving portion 16 is disposed around the substrate 9 and the substrate supporting portion 141 over the entire circumference.

At the cup portion 161 at the liquid receiving position, the cup side wall portion 611 is opposed to the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the cup upper surface portion 612 is in contact with the tip seal 252 at the lower end of the outer edge portion of the chamber cover portion 122 over the entire circumference. A seal portion for preventing passage of gas or liquid is formed between the chamber cover portion 122 and the cup upper surface portion 612 of the cup portion 161. Thereby, a sealed space surrounded by the chamber body 121, the chamber cover portion 122, and the liquid receiving portion 16 (specifically, the cup portion 161, the bellows 164, and the cup opposing portion 163) is formed (hereinafter referred to as "Expanding the confined space 100"). The enlarged sealed space 100 is formed by the communication between the chamber space 120 between the chamber cover portion 122 and the chamber body 121 and the side space 160 between the cup portion 161 and the cup opposing portion 163 via the annular opening 81. A space.

In the first sealed state, the plurality of second contact portions 421 of the substrate pressing portion 142 are in contact with the outer edge portion of the substrate 9. The lower surface 312 of the top plate 123 and the support base 413 of the substrate supporting portion 141 are provided with a plurality of pairs in the up and down direction Magnet (not shown). Hereinafter, each pair of magnets is also referred to as a "magnet pair." In the substrate processing apparatus 1, a plurality of magnet pairs are disposed at different angular intervals in the circumferential direction from the first contact portion 411, the second contact portion 421, the first engagement portion 241, and the second engagement portion 242. . In a state where the substrate pressing portion 142 is in contact with the substrate 9, the downward force is applied to the top plate 123 by the magnetic force (gravitational force) acting between the pair of magnets. Thereby, the substrate pressing portion 142 presses the substrate 9 toward the substrate supporting portion 141.

In the substrate processing apparatus 1, the substrate pressing portion 142 can press the substrate 9 toward the substrate supporting portion 141 by the weight of the top plate 123 and the magnetic force of the magnet, and can be applied to the substrate pressing portion 142 and the substrate supporting portion 141. The substrate 9 is held between the upper and lower sides and firmly held. The magnet pair described above may be omitted as long as the substrate 9 can be held firmly.

In the first sealed state, the flange portion 239 of the held portion 237 is separated from the flange portion 224 of the plate holding portion 222, and the plate holding portion 222 is not in contact with the held portion 237. In other words, the holding of the top plate 123 by the plate holding portion 222 is released. Therefore, the top plate 123 is independent of the chamber cover portion 122, and is rotated by the substrate rotating mechanism 15 together with the substrate 9 and the substrate holding portion held by the substrate holding portion (that is, the substrate supporting portion 141 and the substrate pressing portion 142). .

Further, in the first sealed state, the upper end portion of the first engaging portion 241 is fitted into the concave portion at the lower end portion of the second engaging portion 242. Thereby, the top plate 123 is engaged with the support base 413 of the substrate supporting portion 141 in the circumferential direction around the central axis J1. In other words, the first engaging portion 241 and the second engaging portion 242 are position restricting members that restrict the relative position of the top plate 123 with respect to the substrate supporting portion 141 in the rotational direction (that is, the relative position fixed in the circumferential direction). When the chamber cover portion 122 is lowered, the rotation position of the support portion base 413 is controlled by the substrate rotation mechanism 15 so that the first engagement portion 241 and the second engagement portion 242 are fitted.

Next, the rotation of the substrate 9 is started by the substrate rotating mechanism 15 at a predetermined number of rotations (a relatively low number of rotations, hereinafter referred to as "constant rotation number"). Next, the heating gas is ejected from the plurality of heating nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. Further, the outer exhaust portion 194 and the inner exhaust portion 198 (see FIG. 7) are used to expand the discharge of the gas in the sealed space 100 through the recovery port 166 and the discharge port 218. Next, the supply of the chemical liquid from the upper nozzle 181 is started toward the central portion of the upper surface 91 of the substrate 9 that is rotated (step S12). The chemical liquid ejection to the upper surface 91 of the substrate 9 is performed only at the central portion of the substrate 9, and is not performed at a portion other than the central portion. The chemical liquid from the upper nozzle 181 is continuously supplied to the upper surface 91 of the substrate 9 which is rotated, for example. The chemical liquid on the upper surface 91 is expanded toward the outer periphery of the substrate 9 by the rotation of the substrate 9, and the entire surface 91 is covered with the chemical liquid.

In the supply of the chemical solution from the upper nozzle 181, the ejection of the heated gas from the heating nozzle 180 continues. Thereby, the substrate 9 is heated to a substantially desired temperature, and the upper surface 91 is subjected to a chemical treatment (for example, a polymer removal treatment or an etching treatment) by the chemical liquid. As a result, the uniformity of the chemical treatment for the substrate 9 can be improved. Since the lower surface 312 of the top plate 123 is closely adjacent to the upper surface 91 of the substrate 9, the liquid chemical treatment with respect to the substrate 9 is performed in a very narrow space between the lower surface 312 of the top plate 123 and the upper surface 91 of the substrate 9. . An inert gas is supplied from the upper nozzle 181 in this space. Therefore, the chemical liquid treatment for the substrate 9 can be performed in a low oxygen environment.

In the enlarged sealed space 100, the chemical liquid which is scattered outward in the radial direction from the upper surface 91 of the substrate 9 that is rotated is guided to the inner circumferential surface of the cup portion 161 via the annular opening 81, and is guided toward the liquid receiving recess 165. The chemical liquid guided to the liquid-receiving recess 165 is recovered by the recovery port 166 and flows into the gas-liquid separation unit 193 (see FIG. 7). Inflow of gas and liquid The chemical solution of the separation unit 193 is recovered by the chemical solution recovery unit 195, and impurities and the like are removed through a filter or the like, and then used.

When a predetermined time (for example, 60 to 120 seconds) elapses from the supply of the chemical liquid from the upper nozzle 181, the supply of the chemical from the upper nozzle 181 and the supply of the heated gas from the heating nozzle 180 are stopped. Next, the substrate rotating mechanism 15 removes the chemical liquid from the substrate 9 by making the number of rotations of the substrate 9 higher than the constant number of rotations for a predetermined period of time (for example, 1 to 3 seconds).

Next, the chamber cover portion 122 and the cup portion 161 are moved downward in synchronization. Then, as shown in FIG. 2, the tip seal 251 at the lower end of the outer edge portion of the chamber cover portion 122 closes the annular opening 81 by contacting the upper portion of the chamber side wall portion 214, and the chamber space 120 is The state isolated from the side space 160 is sealed. The cup portion 161 is located at the retracted position in the same manner as in Fig. 1 . Hereinafter, the state of the chamber 12 and the cup portion 161 shown in FIG. 2 will be referred to as a "second sealed state". In the second sealed state, the substrate 9 is directly opposed to the inner wall of the chamber 12, and there is no other liquid receiving portion between the substrates.

In the second sealed state, similarly to the first sealed state, the substrate 9 is pressed against the substrate supporting portion 141 by the substrate pressing portion 142, and the substrate pressing portion 142 and the substrate supporting portion 141 can be moved up and down. The substrate 9 is held and firmly held. Further, the holding of the top plate 123 by the plate holding portion 222 is released, and the top plate 123 is coupled to the substrate supporting portion 141 independently of the chamber cover portion 122, and rotates together with the substrate supporting portion 141 and the substrate 9.

When the chamber space 120 is sealed, the discharge of the gas by the outer exhaust portion 194 (see FIG. 7) is stopped, and the discharge of the gas in the chamber space 120 by the inner exhaust portion 198 via the discharge port 218 is maintained. . Next, supply of pure water from the pure water supply source 184 to the substrate 9 is started (step S13).

The pure water from the pure water supply source 184 is continuously supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9. Further, the pure water system from the pure water supply source 184 is also continuously supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9. The pure water sprayed from the upper nozzle 181 and the lower nozzle 182 is supplied to the substrate 9 as a cleaning liquid.

The pure water is expanded toward the outer peripheral portion of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9, and is scattered outward in the radial direction from the outer periphery of the substrate 9. The pure water scattered from the substrate 9 is received by the inner wall of the chamber 12 (i.e., the inner wall of the chamber cover portion 122 and the chamber side wall portion 214), through the discharge port 218, the second discharge path 192, and the gas-liquid separation portion. 197 and the liquid discharge unit 199 (see FIG. 7) are discarded (the same applies to the drying process of the substrate 9 to be described later). Thereby, in the chamber space 120, the cleaning in the chamber 12 is substantially performed together with the cleaning treatment of the substrate 9 by pure water.

When the supply of the pure water starts to pass the predetermined time, the supply of pure water from the pure water supply source 184 is stopped. Next, the heating gas is ejected toward the lower surface 92 of the substrate 9 from the plurality of heating nozzles 180. Thereby, the substrate 9 is heated.

Next, IPA is supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9, and pure water is replaced with IPA on the upper surface 91 (step S14). If the predetermined time elapses from the supply of the IPA, the IPA supply from the IPA supply source 185 is stopped. Thereafter, in a state where the ejection of the heated gas from the heating nozzle 180 continues, the number of rotations of the substrate 9 is sufficiently higher than the constant number of rotations. Thereby, the IPA is removed from the substrate 9, and the drying process of the substrate 9 is performed (step S15). When the predetermined time elapses from the drying of the substrate 9, the rotation of the substrate 9 is stopped. The drying process of the substrate 9 may be performed by depressurizing the chamber space 120 by the inner exhaust portion 198, and under a reduced pressure environment having a low atmospheric pressure.

Thereafter, as shown in FIG. 1, the chamber cover portion 122 and the top plate 123 are raised, and the chamber 12 is opened. In step S15, since the top plate 123 rotates together with the substrate supporting portion 141, the liquid hardly remains on the lower surface 312 of the top plate 123. Therefore, when the chamber cover portion 122 is raised, there is no possibility that liquid falls from the top plate 123 onto the substrate 9. The substrate 9 is carried out from the chamber 12 by an external transfer mechanism (step S16).

As described above, in the substrate processing apparatus 1, the top plate 123 includes the shielding plate main portion 231, the shielding plate reinforcing portion 232, the connecting portion 233, and the substrate pressing portion 142. The shield main body portion 231 has a plate-like member that covers the upper lower surface 312 of the upper surface 91 of the substrate 9, and the shield plate reinforcing portion 232 is provided inside the shield main body portion 231. The connection portion 233 is connected to the substrate support portion 141 on the outer side in the radial direction of the outer periphery of the substrate 9 , and the substrate pressure-receiving portion 142 is pressed against the substrate 9 from the upper side in the vicinity of the outer periphery of the substrate 9 . The shielding plate reinforcing portion 232 includes a central portion 321 and a plurality of peripheral portions 322. The plurality of peripheral portions 322 extend outward in the radial direction from the central portion 321 to the outer periphery of the outer periphery of the substrate 9, respectively, and are apart from each other in the circumferential direction. The connection portion 233 and the substrate pressing portion 142 are disposed at the radially outer end portions of the plurality of peripheral portions 322.

By supporting the shield main body portion 231 by the shield plate reinforcing portion 232 as described above, it is possible to suppress deformation of the shield plate main body portion 231 due to its own weight. Further, since the plurality of peripheral portions 322 are apart from each other in the circumferential direction, even when the shield plate reinforcing portion 232 is thermally deformed due to the temperature change of the top plate 123, the thermal deformation of each of the peripheral portions 322 can be suppressed (especially In the case of thermal deformation in the circumferential direction, the shielding plate reinforcing portion 232 and the shielding plate main portion 231 can be prevented from being warped in the vertical direction. In other words, it is possible to prevent the shield plate reinforcing portion 232 and the shield plate main portion 231 from being thermally deformed and moving the outer peripheral portion in the vertical direction. Thereby, it can be suppressed from being disposed in a plurality of peripheral portions The relative position of the connecting portion 233 at the radially outer end portion of the 322 and the substrate pressing portion 142 may vary. As a result, even when the temperature of the top plate 123 is changed, the substrate 9 can be firmly pressed by the substrate pressing portion 142 while maintaining the connection between the top plate 123 and the substrate supporting portion 141, and the substrate supporting portion can be firmly supported. The substrate 9 is firmly held between 141.

As described above, in the plurality of peripheral portions 322, the peripheral portion 322 of each of the second engaging portions 242 of the connecting portion 233 and the peripheral portion 322 of each of the second contact portions 421 in which the substrate pressing portion 142 is disposed are arranged. Different. Thereby, the width of each peripheral portion 322 in the circumferential direction can be made small. In other words, the peripheral portions 322 can be made thinner. Therefore, thermal deformation (particularly, thermal deformation in the circumferential direction) of the peripheral portion 322 can be further suppressed. As a result, it is possible to further suppress the warpage of the shield main body portion 231 and the shield plate reinforcing portion 232 from being warped in the vertical direction. Further, by making the plurality of peripheral portions 332 thinner, the weight of the shield plate reinforcing portion 232 and the top plate 123 can be reduced. As a result, an increase in the output of the substrate rotating mechanism 15 can be suppressed.

In the substrate processing apparatus 1, the entire system of the shielding plate reinforcing portion 232 is covered by the shielding plate main portion 231. Thereby, it is possible to prevent the shielding plate reinforcing portion 232 from coming into contact with the chemical liquid or the like and eluting the material of the shielding plate reinforcing portion 232. Therefore, the degree of freedom in material selection of the shield plate reinforcing portion 232 can be improved. The structure of the top plate 123 is particularly suitable for the case where the shielding plate reinforcing portion 232 contains a metal or a semi-metal which is more easily dissolved by contact with the chemical liquid. The shielding plate reinforcing portion 232 having a higher strength can be manufactured at a lower cost by the shielding plate reinforcing portion 232 containing metal or semi-metal. In the case where the shielding plate reinforcing portion 232 includes a semi-metal, for example, a case where the shielding plate reinforcing portion 232 is formed of tantalum carbide (SiC) can be considered.

As described above, in the substrate processing apparatus 1, even in the top plate 123 When the temperature is changed, the substrate 9 can be stably held while maintaining the connection between the top plate 123 and the substrate supporting portion 141. Therefore, the structure of the substrate processing apparatus 1 is particularly suitable for a substrate processing apparatus provided with a fluid supply unit that supplies a fluid having a higher temperature than the substrate 9 to the substrate 9. In the example shown in Fig. 1, a plurality of heating nozzles 180 opposed to the lower surface 92 of the substrate 9 are provided as a fluid supply portion, but other various fluid supply portions may be provided. For example, in the substrate processing apparatus 1, a fluid supply unit that supplies the heated gas to the upper surface 91 of the substrate 9 may be provided.

In the top plate 123 of the substrate processing apparatus 1, the shielding plate reinforcing portion 232 does not necessarily have to be fixed inside the shielding plate main portion 231. Figure 10 is a cross-sectional view showing a portion of another preferred top plate 123a in an enlarged manner. In the top plate 123a, the shielding plate reinforcing portion 232 having substantially the same shape as that shown in Fig. 6 is provided on the upper portion of the substantially annular plate-shaped shielding plate main body portion 231. The shield plate reinforcing portion 232 is formed of, for example, a carbon material such as a glassy carbon or a C/C composite material.

In the top plate 123a, the shielding plate main body portion 231 is supported by the shielding plate reinforcing portion 232 in the same manner as described above, whereby deformation of the shielding plate main body portion 231 due to its own weight can be suppressed. Further, even when the shield plate reinforcing portion 232 is thermally deformed due to the temperature change of the top plate 123a, thermal deformation (especially thermal deformation in the circumferential direction) of each peripheral portion 322 can be suppressed, and the shielding plate can be suppressed from reinforcing. The portion 232 and the shield main body portion 231 are warped in the vertical direction. Thereby, it is possible to suppress a change in the relative position of the connecting portion 233 (see FIG. 6) disposed at the radially outer end portion of the plurality of peripheral portions 322 and the substrate pressing portion 142. As a result, even when the temperature of the top plate 123a changes, the substrate pressing portion 142 can be firmly pressed against the substrate 9 while maintaining the connection between the top plate 123a and the substrate supporting portion 141 (see FIG. 2). The substrate 9 is firmly held between the substrate supporting portion 141.

In the top plate 123a, since the shielding plate reinforcing portion 232 is formed of a material having high resistance such as glassy carbon or the like, even if it is fixed to the shielding plate reinforcing portion of the upper surface 311 of the shielding plate main body portion 231 At 232, if the chemical solution is attached, the elution of the material of the shield plate reinforcing portion 232 does not occur. Further, since it is not necessary to cover the entire shield plate reinforcing portion 232 by the shield main body portion 231, the shield main body portion 231 can be made thinner. As a result, the top plate 123a can be made lighter, and the output of the substrate rotating mechanism 15 (see FIG. 2) can be suppressed from increasing.

Various changes can be made in the substrate processing apparatus 1 described above.

For example, the number of the first contact portions 411 of the substrate supporting portion 141 and the second contact portion 421 of the substrate pressing portion 142 can be appropriately changed. The number of the first contact portions 411 and the number of the second contact portions 421 may be different or the same. The number of the first engagement portion 241 and the second engagement portion 242 can also be changed as appropriate. It is preferable that a plurality of the first engaging portion 241 and the second engaging portion 242 are provided separately.

In the shielding plate reinforcing portion 232, for example, as shown in FIG. 11, one second engaging portion 242 and one second portion may be disposed at the radially outer end portion of one substantially band-shaped peripheral portion 322. Contact portion 421. Alternatively, a plurality of second engaging portions 242 may be provided in one peripheral portion 322, or a plurality of second contact portions 421 may be provided. The shielding plate reinforcing portion 232 may be provided with a peripheral portion 322 in which the second engaging portion 242 and the second contact portion 421 are not disposed.

The shielding plate reinforcing portion 232 may be formed of various materials as long as it can support the shielding plate main body portion 231. Each of the peripheral portions 322 is radially outward from the central portion 321 , but does not necessarily need to extend substantially linearly, and may extend while being curved. The shape of each peripheral portion 322 is not limited to a substantially belt shape. For example, as in the shield plate reinforcing portion 232a shown in FIG. 12, a plurality of substantially peripheral portions 322a of the fan shape may be respectively The central portion 321 expands outward in the radial direction. In the shielding plate reinforcing portion 232a, a plurality of strip-shaped slits 323 extending from the central portion 321 toward the outer edge of the shielding plate reinforcing portion 232a may be provided, and the portion between the plurality of slits 323 may be identified as the above. The peripheral portion 322a.

The top plate 123 may have a substantially disk shape. In this case, the central portion 321 of the shield plate reinforcing portion 232 may have a substantially disk shape.

In the substrate processing apparatus 1, various configurations other than the plurality of heating nozzles 180 may be provided as the heating portion for heating the substrate 9. For example, a mechanism for irradiating light to the substrate 9 to heat the substrate 9 may be provided as the heating portion.

The chamber opening and closing mechanism 131 does not necessarily need to move the chamber lid portion 122 in the vertical direction, and the chamber body portion 121 may be moved in the vertical direction while the chamber lid portion 122 is fixed. The chamber 12 is not necessarily limited to a substantially cylindrical shape, and may have various shapes. Further, in the substrate processing apparatus 1, it is not always necessary to provide the chamber 12.

The shape and structure of the stator portion 151 and the rotor portion 152 of the substrate rotating mechanism 15 can be variously changed. The rotor portion 152 does not necessarily have to be rotated in a floating state, and a structure in which a rotor portion 152 is mechanically supported by a guide or the like in the chamber 12 may be provided, and the rotor portion 152 may be rotated along the guide. The substrate rotating mechanism 15 does not necessarily need to be a hollow motor, and a shaft rotating type motor may be used as the substrate rotating mechanism.

In the substrate processing apparatus 1, the chemical solution supplied from the chemical solution supply source 183 may be used to perform various processes other than the above-described polymer removal treatment or etching treatment, for example, removal of an oxide film on a substrate or development by an oxide film. Development by liquid or the like. Further, the chemical treatment system for the substrate 9 can also be carried out in the second sealed state.

In the substrate processing apparatus 1, in addition to the semiconductor substrate, It is used for the processing of a glass substrate used in a display device such as a liquid crystal display device, a plasma display, or a field emission display (FED). Alternatively, the substrate processing apparatus 1 can be used for processing such as a substrate for a disk, a substrate for a disk, a substrate for a magneto-optical disk, a substrate for a photomask, a substrate for a ceramic substrate, and a substrate for a solar cell.

The configurations in the above-described embodiments and modifications are appropriately combined as long as they do not contradict each other.

The present invention has been described and illustrated in detail, but the description of the invention is intended to be illustrative only and not limiting. Therefore, many variations or aspects may be made without departing from the scope of the invention.

142‧‧‧Substrate pressure part

231‧‧‧Shaping plate body

232‧‧‧Shading plate reinforcement

233‧‧‧Connecting Department

242‧‧‧2nd merging department

321‧‧‧ Central Department

322‧‧‧The surrounding department

421‧‧‧2nd contact

J1‧‧‧ central axis

Claims (7)

A substrate processing apparatus comprising: a substrate supporting portion that supports a substrate from a lower side in a horizontal state; and a shielding plate that is disposed opposite to an upper surface of the substrate and coupled to the substrate supporting portion; And a substrate rotating mechanism that rotates the substrate together with the substrate supporting portion and the shielding plate around a central axis that faces in the vertical direction; the shielding plate includes a plate-shaped shielding plate main portion that covers the substrate a lower surface of the upper surface; a shielding plate reinforcing portion disposed inside or above the shielding plate body portion; and a connecting portion radially outward of the outer periphery of the substrate and the substrate supporting portion And a substrate pressing portion that presses the substrate from the upper side in the vicinity of the outer peripheral edge of the substrate; the shielding plate reinforcing portion includes a central portion; and a plurality of peripheral portions respectively from the central portion to the The vicinity of the outer peripheral edge of the substrate is expanded radially outward, and is apart from each other in the circumferential direction; the connecting portion and the substrate pressing Based portion disposed in the radial direction of the end portion of the outer peripheral portion of the plurality of. The substrate processing apparatus according to claim 1, wherein the connecting portion includes a plurality of connecting elements, and the substrate pressing portion includes a plurality of substrate pressing elements. In the plurality of peripheral portions, the peripheral portion in which each of the connecting elements is disposed and the peripheral portion in which the respective substrate pressing elements are disposed are different from each other. The substrate processing apparatus according to claim 2, wherein the entire system of the shielding plate reinforcing portion is covered by the shielding plate main portion. The substrate processing apparatus according to claim 2, wherein the shielding plate reinforcing portion is formed of a carbon material, and the shielding plate reinforcing portion is fixed to an upper surface of the shielding plate main portion. The substrate processing apparatus according to claim 1, wherein the entire system of the shielding plate reinforcing portion is covered by the shielding plate main portion. The substrate processing apparatus according to claim 1, wherein the shielding plate reinforcing portion is formed of a carbon material, and the shielding plate reinforcing portion is fixed to an upper surface of the shielding plate main portion. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a heating unit that heats the substrate.