TWI542270B - Method for manufacturing printed wiring board and ic package substrate - Google Patents

Method for manufacturing printed wiring board and ic package substrate Download PDF

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TWI542270B
TWI542270B TW101109780A TW101109780A TWI542270B TW I542270 B TWI542270 B TW I542270B TW 101109780 A TW101109780 A TW 101109780A TW 101109780 A TW101109780 A TW 101109780A TW I542270 B TWI542270 B TW I542270B
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metal wiring
group
polymer
insulating substrate
resin layer
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TW101109780A
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Chinese (zh)
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TW201244576A (en
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南高一
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富士軟片股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/122Organic non-polymeric compounds, e.g. oil, wax, thiol

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

印刷配線基板的製造方法以及IC封裝基板 Printed wiring substrate manufacturing method and IC package substrate

本發明是有關於一種印刷配線基板的製造方法。 The present invention relates to a method of manufacturing a printed wiring board.

近年來,伴隨著電子機器的高功能化等要求,而推進電子零件的高密度積體化,該些電子零件中使用的印刷配線基板等亦推進小型化且高密度化。於此種狀況下,印刷配線基板中的金屬配線寬度亦更狹小化。 In recent years, with the demand for higher functionality of electronic devices, the high-density integration of electronic components has been promoted, and printed wiring boards and the like used in these electronic components have been reduced in size and density. Under such circumstances, the width of the metal wiring in the printed wiring board is also narrower.

通常,印刷配線基板是藉由將金屬配線與絕緣樹脂層各積層一層以上而獲得。此時,若金屬配線與絕緣樹脂層的密接性不足,則於金屬配線與絕緣樹脂層之間產生間隙,若水蒸汽等滲入至該間隙中,則引起電氣絕緣性的下降或配線間的短路等。 Usually, the printed wiring board is obtained by laminating one or more layers of the metal wiring and the insulating resin layer. In this case, when the adhesion between the metal wiring and the insulating resin layer is insufficient, a gap is formed between the metal wiring and the insulating resin layer, and when water vapor or the like penetrates into the gap, electrical insulation is lowered or short-circuited between wirings is caused. .

先前以來,作為使金屬配線與絕緣樹脂層的密接性提高的方法,一直採用使金屬配線表面進行粗面化而產生定準效應(anchor effect)的方法。然而,於現今金屬配線的寬度狹小化的狀況下,存在難以使金屬配線表面進行粗面化,且因所形成的凹凸而引起高頻特性變差的問題。 Conventionally, as a method of improving the adhesion between the metal wiring and the insulating resin layer, a method of roughening the surface of the metal wiring to generate an anchor effect has been employed. However, in the case where the width of the metal wiring is now narrow, it is difficult to roughen the surface of the metal wiring, and the high-frequency characteristics are deteriorated due to the unevenness formed.

因此,作為於不使金屬配線表面進行粗面化的情況下使金屬配線與絕緣樹脂層的密接性提高的方法,已提出有以下方法:利用三嗪硫醇(triazine thiol)衍生物對金屬配線表面進行處理的方法(專利文獻1)、或利用具有巰基的矽烷偶合劑對金屬配線表面進行處理的方法(專利文獻2)等。 Therefore, as a method of improving the adhesion between the metal wiring and the insulating resin layer without roughening the surface of the metal wiring, there has been proposed a method of using a triazine thiol derivative for metal wiring. A method of treating a surface (Patent Document 1) or a method of treating a surface of a metal wiring by a decane coupling agent having a mercapto group (Patent Document 2).

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2000-156563號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-156563

[專利文獻2]日本專利特開平11-354922號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 11-354922

本發明者等人使用專利文獻1中具體揭示的三嗪硫醇化合物(三聚硫氰酸(thiocyanuric acid))或專利文獻2中具體揭示的巰基丙基三甲氧基矽烷,對絕緣樹脂層的密接性進行了研究,結果發現,密接性的強度隨著時間的經過而大幅度地下降,需要進一步的改良。 The inventors of the present invention used the triazine thiol compound (thiocyanuric acid) specifically disclosed in Patent Document 1 or the mercaptopropyltrimethoxydecane specifically disclosed in Patent Document 2, for the insulating resin layer. The adhesion was investigated, and it was found that the strength of the adhesion greatly decreased with the passage of time, and further improvement was required.

鑒於上述實際情況,本發明的目的在於提供一種印刷配線基板的製造方法,上述印刷配線基板的絕緣樹脂層的初期密接性及絕緣樹脂層的密接性的經時穩定性優異。 In view of the above-described actual circumstances, an object of the present invention is to provide a method for producing a printed wiring board, which is excellent in initial adhesion of the insulating resin layer of the printed wiring board and adhesion stability of the insulating resin layer.

本發明者等人進行了潛心研究,結果發現,藉由使用具有預定官能基的硫醇化合物對金屬配線進行處理後,進而使用具有預定官能基的聚合物進一步對金屬配線進行處理,金屬配線與絕緣樹脂層的密接性的經時穩定性提高。 As a result of intensive studies, the inventors of the present invention have found that by treating a metal wiring with a thiol compound having a predetermined functional group, the metal wiring is further processed using a polymer having a predetermined functional group, and the metal wiring is The stability with time of the adhesion of the insulating resin layer is improved.

即,本發明者等人發現,藉由以下構成可解決上述課題。 That is, the inventors of the present invention have found that the above problems can be solved by the following configuration.

(1)一種印刷配線基板的製造方法,上述印刷配線基板於附有金屬配線的絕緣基板上設有絕緣樹脂層,上述印刷配線基板的製造方法包含:第1被覆步驟,使用具有2個以上的反應性官能基X(其中矽烷醇基(silanol group)及矽原子鍵結水解性基 (silicon-bonded hydrolyzable group)除外)、且反應性官能基X的至少1個具有後述式(1)所表示的官能基的硫醇化合物,將附有金屬配線的絕緣基板的絕緣基板表面及金屬配線表面覆蓋,所述附有金屬配線的絕緣基板具有絕緣基板以及配置於絕緣基板上的金屬配線;第1清洗步驟,使用溶劑對附有金屬配線的絕緣基板進行清洗,將絕緣基板表面上的硫醇化合物去除;第2被覆步驟,使用具有至少3個以上的與反應性官能基X反應的反應性官能基Y的聚合物,將絕緣基板表面及經硫醇化合物覆蓋的金屬配線表面覆蓋;第2清洗步驟,使用溶劑對附有金屬配線的絕緣基板進行清洗,將絕緣基板表面上的聚合物去除;以及絕緣樹脂層形成步驟,於附有金屬配線的絕緣基板的金屬配線側的表面上形成絕緣樹脂層。 (1) A method of manufacturing a printed wiring board, wherein the printed wiring board is provided with an insulating resin layer on an insulating substrate with metal wiring, and the method for manufacturing the printed wiring board includes a first covering step and two or more used Reactive functional group X (in which silanol group and ruthenium atom bond hydrolyzable group) (a silicon-bonded hydrolyzable group), and at least one of the reactive functional groups X having a functional group represented by the following formula (1), and an insulating substrate surface and a metal having an insulating substrate with a metal wiring The wiring surface is covered, and the insulating substrate with the metal wiring has an insulating substrate and a metal wiring disposed on the insulating substrate. In the first cleaning step, the insulating substrate with the metal wiring is cleaned using a solvent to form a surface of the insulating substrate. The thiol compound is removed; and the second coating step uses a polymer having at least three or more reactive functional groups Y reactive with the reactive functional group X to cover the surface of the insulating substrate and the surface of the metal wiring covered with the thiol compound; In the second cleaning step, the insulating substrate with the metal wiring is cleaned with a solvent to remove the polymer on the surface of the insulating substrate; and the insulating resin layer forming step is performed on the surface of the metal wiring side of the insulating substrate with the metal wiring An insulating resin layer is formed.

(2)如(1)所述之印刷配線基板的製造方法,其中上述聚合物的數量平均分子量為10000以上。 (2) The method for producing a printed wiring board according to the above aspect, wherein the polymer has a number average molecular weight of 10,000 or more.

(3)如(1)或(2)所述之印刷配線基板的製造方法,其中上述反應性官能基X為選自由後述式(1)所表示的官能基、一級胺基、二級胺基及異氰酸酯基所組成的組群中的基。 (3) The method for producing a printed wiring board according to the above aspect, wherein the reactive functional group X is a functional group selected from the formula (1) described below, a primary amino group, and a secondary amino group. And a group in the group consisting of isocyanate groups.

(4)如(1)至(3)中任一項所述之印刷配線基板的製造方法,其中上述反應性官能基Y為選自由環氧基、丙烯酸酯基及甲基丙烯酸酯基所組成的組群中的基。 (4) The method for producing a printed wiring board according to any one of (1), wherein the reactive functional group Y is selected from the group consisting of an epoxy group, an acrylate group, and a methacrylate group. The base in the group.

(5)如(1)至(4)中任一項所述之印刷配線基板的 製造方法,其中上述第2被覆步驟為以下步驟:使用含有聚合物、且實質上不含無機填料的聚合物組成物,將絕緣基板表面及經硫醇化合物覆蓋的金屬配線表面覆蓋。 (5) The printed wiring board according to any one of (1) to (4) In the manufacturing method, the second coating step is a step of covering the surface of the insulating substrate and the surface of the metal wiring covered with the thiol compound using a polymer composition containing a polymer and substantially containing no inorganic filler.

(6)如(5)所述之印刷配線基板的製造方法,其中相對於聚合物組成物總量,上述聚合物組成物中的聚合物的含量為0.01wt%~80wt%。 (6) The method for producing a printed wiring board according to (5), wherein the content of the polymer in the polymer composition is 0.01% by weight to 80% by weight based on the total amount of the polymer composition.

(7)如(1)至(6)中任一項所述之印刷配線基板的製造方法,其中上述反應性官能基X的個數為4個以上。 The method for producing a printed wiring board according to any one of the above aspects, wherein the number of the reactive functional groups X is four or more.

(8)一種IC封裝基板,其具有由如(1)至(7)中任一項所述之製造方法所得的印刷配線基板。 (8) An IC package substrate having the printed wiring board obtained by the production method according to any one of (1) to (7).

根據本發明,可提供一種印刷配線基板的製造方法,上述印刷配線基板的絕緣樹脂層的初期密接性及絕緣樹脂層的密接性的經時穩定性優異。 According to the present invention, it is possible to provide a method for producing a printed wiring board, which is excellent in initial adhesion of the insulating resin layer of the printed wiring board and adhesion stability of the insulating resin layer.

以下,對本發明的印刷配線基板的製造方法的合適的實施態樣加以說明。 Hereinafter, a suitable embodiment of the method for producing a printed wiring board of the present invention will be described.

首先,對與本發明的先前技術相比較的特徵點加以詳述。 First, the feature points compared with the prior art of the present invention will be described in detail.

本發明的特徵點可列舉以下方面:利用具有2個以上的反應性官能基X、且反應性官能基X的至少1個具有後述式(1)所表示的官能基的硫醇化合物(以下亦簡稱為硫醇化合物)對金屬配線進行處理後,進而利用分子內具有3個以上反應性官能基Y的聚合物(以下亦簡稱為聚合物) 對金屬配線進行處理,其中所述反應性官能基Y與反應性官能基X反應。即,金屬配線的表面是由硫醇化合物的層所覆蓋,進而該硫醇化合物的層是由聚合物的層所覆蓋。該硫醇化合物及聚合物發揮補助金屬配線與絕緣樹脂層之間的密接性的作用(密接補助層的作用)。 In the present invention, a thiol compound having at least one functional group having two or more reactive functional groups X and having a functional group represented by the following formula (1) (hereinafter also After the metal wiring is treated as a thiol compound, a polymer having three or more reactive functional groups Y in the molecule (hereinafter also referred to simply as a polymer) is further used. The metal wiring is treated wherein the reactive functional group Y is reacted with a reactive functional group X. That is, the surface of the metal wiring is covered by a layer of a thiol compound, and the layer of the thiol compound is covered by a layer of the polymer. The thiol compound and the polymer function to support the adhesion between the metal wiring and the insulating resin layer (the function of the adhesion support layer).

硫醇化合物經由反應性官能基X(特別是式(1)所表示的基)而鍵結於金屬配線。進而,聚合物經由反應性官能基Y而與硫醇化合物鍵結,於金屬配線上形成硫醇化合物與聚合物的網狀結構(網絡結構)。 The thiol compound is bonded to the metal wiring via the reactive functional group X (particularly the group represented by the formula (1)). Further, the polymer is bonded to the thiol compound via the reactive functional group Y to form a network structure (network structure) of the thiol compound and the polymer on the metal wiring.

若如上述般於金屬配線與絕緣樹脂層之間形成硫醇化合物與聚合物的網絡結構,則水分等不易接近金屬配線,金屬配線的氧化或腐蝕等得到抑制,結果絕緣樹脂層的密接性的經時穩定性提高。 When the network structure of the thiol compound and the polymer is formed between the metal wiring and the insulating resin layer as described above, moisture or the like is less likely to be close to the metal wiring, and oxidation or corrosion of the metal wiring is suppressed, and as a result, the adhesion of the insulating resin layer is improved. The stability over time is improved.

另外,聚合物插入至金屬配線與絕緣樹脂層之間,藉此發揮緩和兩者之間的熱膨脹的差異的作用。換言之,該聚合物發揮所謂的應力緩和的作用,結果絕緣樹脂層的密接性的經時穩定性提高。 Further, the polymer is inserted between the metal wiring and the insulating resin layer, thereby functioning to alleviate the difference in thermal expansion between the two. In other words, the polymer exhibits a so-called stress relaxation effect, and as a result, the stability with time of the adhesion of the insulating resin layer is improved.

另外,本發明的製造方法的其他特徵可列舉以下方面:使硫醇化合物或聚合物與附有金屬配線的絕緣基板接觸後,進而使用溶劑(清洗溶劑)進行清洗。本發明者等人發現,若於絕緣基板上殘存未反應的物理吸附的硫醇化合物或聚合物,則會於絕緣樹脂層與絕緣基板之間產生密接不良等,導致短路。根據上述發現而進行了研究,結果發現,藉由實施如本發明般的處理,可將絕緣基板上的硫 醇化合物或聚合物去除,並且可確保金屬配線與絕緣樹脂層的密接性。 Further, other features of the production method of the present invention include a method in which a thiol compound or a polymer is brought into contact with an insulating substrate with a metal wiring, and then washed with a solvent (washing solvent). The inventors of the present invention have found that if an unreacted physically adsorbed thiol compound or polymer remains on the insulating substrate, a poor adhesion or the like occurs between the insulating resin layer and the insulating substrate, resulting in a short circuit. According to the above findings, it was found that sulfur can be applied to the insulating substrate by performing the treatment as in the present invention. The alcohol compound or the polymer is removed, and the adhesion of the metal wiring to the insulating resin layer can be ensured.

再者,例如於使用先前技術中使用的巰基丙基三甲氧基矽烷等具有矽原子鍵結水解性基(具體而言為烷氧基矽烷基)的矽烷偶合劑代替上述硫醇化合物的情形時,該矽烷偶合劑不僅與金屬配線形成化學反應,亦與絕緣基板形成化學反應。因此,即便暫且使用溶劑進行清洗處理,亦難以自絕緣基板上去除矽烷偶合劑。具體而言,如圖3(A)所示,不僅金屬配線14上被矽烷偶合劑60覆蓋,絕緣基板12上亦被矽烷偶合劑60覆蓋。 Further, for example, when a decane coupling agent having a halogen atom-bonding hydrolyzable group (specifically, an alkoxyalkyl group) such as mercaptopropyltrimethoxydecane used in the prior art is used in place of the above-described thiol compound, The decane coupling agent not only chemically reacts with the metal wiring but also chemically reacts with the insulating substrate. Therefore, it is difficult to remove the decane coupling agent from the insulating substrate even if the solvent is used for the cleaning treatment. Specifically, as shown in FIG. 3(A), not only the metal wiring 14 is covered with the decane coupling agent 60, but also the insulating substrate 12 is covered with the decane coupling agent 60.

進而,若聚合物於該絕緣基板上堆積,則矽烷偶合劑與聚合物發生化學鍵結,絕緣基板上的聚合物亦無法藉由溶劑而去除。具體而言,如圖3(B)所示,於矽烷偶合劑60上堆積聚合物62。 Further, when the polymer is deposited on the insulating substrate, the decane coupling agent is chemically bonded to the polymer, and the polymer on the insulating substrate cannot be removed by the solvent. Specifically, as shown in FIG. 3(B), the polymer 62 is deposited on the decane coupling agent 60.

若此種矽烷偶合劑或聚合物堆積於絕緣基板表面上,則如上述般於絕緣樹脂層與絕緣基板之間產生密接不良等,導致短路。 When such a decane coupling agent or a polymer is deposited on the surface of an insulating substrate, a poor adhesion or the like occurs between the insulating resin layer and the insulating substrate as described above, resulting in a short circuit.

首先,對本發明的印刷配線基板的製造方法加以詳述,然後對所製造的印刷配線基板的態樣加以詳述。 First, the method of manufacturing the printed wiring board of the present invention will be described in detail, and then the aspect of the printed wiring board to be manufactured will be described in detail.

本發明的印刷配線基板的製造方法包含第1被覆步驟、第1清洗步驟、第2被覆步驟、第2清洗步驟以及絕緣樹脂層形成步驟。 The method for producing a printed wiring board according to the present invention includes a first coating step, a first cleaning step, a second coating step, a second cleaning step, and an insulating resin layer forming step.

以下,參照圖式,對各步驟中使用的材料及步驟的順序加以詳述。 Hereinafter, the materials used in the respective steps and the order of the steps will be described in detail with reference to the drawings.

[第1被覆步驟] [1st covering step]

第1被覆步驟為以下步驟:使用硫醇化合物,將附有金屬配線的絕緣基板的絕緣基板表面及金屬配線表面覆蓋,所述附有金屬配線的絕緣基板具有絕緣基板及配置於絕緣基板上的金屬配線,上述硫醇化合物具有2個以上的反應性官能基X(其中矽烷醇基及矽原子鍵結水解性基除外),且反應性官能基的至少1個具有後述式(1)所表示的官能基。換言之,該步驟為以硫醇化合物將附有金屬配線的絕緣基板的表面(特別是金屬配線側的表面)覆蓋的步驟。藉由該步驟,於圖1(A)中所示的附有金屬配線的絕緣基板10的絕緣基板12表面上及金屬配線14表面上,形成硫醇化合物的層(硫醇化合物層)16(圖1(B))。特別是金屬配線14上的硫醇化合物主要經由式(1)所表示的基而鍵結於金屬配線14表面。 The first coating step is a step of covering the surface of the insulating substrate and the surface of the metal wiring of the insulating substrate with the metal wiring, which has an insulating substrate and is disposed on the insulating substrate, using a thiol compound. In the metal wiring, the thiol compound has two or more reactive functional groups X (excluding a sulfonyl group and a ruthenium atom-bonding hydrolyzable group), and at least one of the reactive functional groups has a formula (1) to be described later. Functional group. In other words, this step is a step of covering the surface (particularly the surface on the metal wiring side) of the insulating substrate with the metal wiring with a thiol compound. By this step, a layer of a thiol compound (thiol compound layer) 16 is formed on the surface of the insulating substrate 12 of the metal wiring-attached insulating substrate 10 shown in FIG. 1(A) and on the surface of the metal wiring 14. Figure 1 (B)). In particular, the thiol compound on the metal wiring 14 is mainly bonded to the surface of the metal wiring 14 via the group represented by the formula (1).

首先,對該步驟中使用的材料(附有金屬配線的絕緣基板、硫醇化合物)加以說明,然後對該步驟的順序加以說明。 First, the material used in the step (insulating substrate with metal wiring, thiol compound) will be described, and the order of the steps will be described.

(附有金屬配線的絕緣基板) (Insulated substrate with metal wiring)

該步驟中使用的附有金屬配線的絕緣基板(內層基板)具有絕緣基板及配置於絕緣基板上的金屬配線。換言之,附有金屬配線的絕緣基板只要為至少具有絕緣基板及金屬配線的積層構造,且於最外層配置有金屬配線即可。圖1(A)中示出附有金屬配線的絕緣基板的一個態樣,附有金屬配線的絕緣基板10具有絕緣基板12、及配置於絕緣 基板12上的金屬配線14。金屬配線14於圖1(A)中是僅設置於基板的單面,但亦可設置於兩面。即,附有金屬配線的絕緣基板10可為單面基板,亦可為兩面基板。 The insulating substrate (inner substrate) with metal wiring used in this step has an insulating substrate and metal wiring disposed on the insulating substrate. In other words, the insulating substrate with the metal wiring may have a laminated structure including at least an insulating substrate and metal wiring, and a metal wiring may be disposed on the outermost layer. FIG. 1(A) shows an aspect of an insulating substrate with metal wiring, and the insulating substrate 10 with metal wiring has an insulating substrate 12 and is disposed in insulation. Metal wiring 14 on the substrate 12. The metal wiring 14 is provided on only one side of the substrate in Fig. 1(A), but may be provided on both sides. That is, the insulating substrate 10 with the metal wiring may be a single-sided substrate or a double-sided substrate.

再者,於金屬配線14存在於絕緣基板10的兩面的情形時,第1被覆步驟、第1清洗步驟、第2被覆步驟、第2清洗步驟以及絕緣樹脂層形成步驟是對基板的兩面實施。 In the case where the metal wiring 14 is present on both surfaces of the insulating substrate 10, the first coating step, the first cleaning step, the second coating step, the second cleaning step, and the insulating resin layer forming step are performed on both surfaces of the substrate.

絕緣基板只要為絕緣性且可支撐金屬配線,則其種類並無特別限制。例如可使用有機基板、陶瓷基板、玻璃基板等。 The insulating substrate is not particularly limited as long as it is insulating and can support the metal wiring. For example, an organic substrate, a ceramic substrate, a glass substrate, or the like can be used.

有機基板的材料可列舉樹脂,例如較佳為使用熱硬化性樹脂、熱塑性樹脂或將該些樹脂混合而成的樹脂。熱硬化性樹脂例如可列舉酚樹脂、脲樹脂、三聚氰胺樹脂、醇酸樹脂、丙烯酸系樹脂、不飽和聚酯樹脂、鄰苯二甲酸二烯丙酯樹脂、環氧樹脂、矽酮樹脂、呋喃樹脂、酮樹脂、二甲苯樹脂、苯并環丁烯樹脂等。熱塑性樹脂例如可列舉聚醯亞胺樹脂、聚苯醚樹脂、聚苯硫醚樹脂、芳族聚醯胺樹脂、液晶聚合物等。 The material of the organic substrate may, for example, be a resin. For example, a thermosetting resin, a thermoplastic resin or a resin obtained by mixing the resins is preferably used. Examples of the thermosetting resin include a phenol resin, a urea resin, a melamine resin, an alkyd resin, an acrylic resin, an unsaturated polyester resin, a diallyl phthalate resin, an epoxy resin, an anthrone resin, and a furan resin. , ketone resin, xylene resin, benzocyclobutene resin, and the like. Examples of the thermoplastic resin include a polyimide resin, a polyphenylene ether resin, a polyphenylene sulfide resin, an aromatic polyamide resin, a liquid crystal polymer, and the like.

再者,有機基板的材料亦可使用玻璃織布、玻璃不織布、芳族聚醯胺織布、芳族聚醯胺不織布、芳香族聚醯胺織布或使該些布含浸上述樹脂而成的材料等。 Furthermore, the material of the organic substrate may also be a glass woven fabric, a glass non-woven fabric, an aromatic polyamide woven fabric, an aromatic polyamide woven fabric, an aromatic polyamide woven fabric, or a cloth impregnated with the above resin. Materials, etc.

金屬配線主要包含金屬。金屬的種類並無特別限制,可列舉銅或銅合金、銀或銀合金、錫、鈀、金、鎳、鉻、鉑、鐵、鎵、銦或該些金屬的組合等。 Metal wiring mainly contains metal. The type of the metal is not particularly limited, and examples thereof include copper or a copper alloy, silver or a silver alloy, tin, palladium, gold, nickel, chromium, platinum, iron, gallium, indium, or a combination of these metals.

於絕緣基板上形成金屬配線的形成方法並無特別限制,可採用公知的方法。具代表性的方法可列舉利用蝕刻處理的減成法(subtractive process)、或利用電鍍的半加成法(semi-additive process)。 The method of forming the metal wiring on the insulating substrate is not particularly limited, and a known method can be employed. A representative method may be a subtractive process using an etching process or a semi-additive process using electroplating.

再者,金屬配線中,亦可於不損及本發明的效果的範圍內含有黏合樹脂(binder resin)等有機物。 Further, in the metal wiring, an organic substance such as a binder resin may be contained in a range that does not impair the effects of the present invention.

金屬配線的寬度並無特別限制,就印刷配線基板的高積體化的方面而言,較佳為0.1μm~1000μm,更佳為0.1μm~25μm,進而佳為0.1μm~10μm。 The width of the metal wiring is not particularly limited, and is preferably from 0.1 μm to 1000 μm, more preferably from 0.1 μm to 25 μm, even more preferably from 0.1 μm to 10 μm, in terms of high integration of the printed wiring board.

金屬配線間的間隔並無特別限制,就印刷配線基板的高積體化的方面而言,較佳為0.1μm~1000μm,更佳為0.1μm~25μm,進而佳為0.1μm~10μm。 The interval between the metal wirings is not particularly limited, and is preferably from 0.1 μm to 1000 μm, more preferably from 0.1 μm to 25 μm, even more preferably from 0.1 μm to 10 μm, in terms of high integration of the printed wiring board.

另外,金屬配線的圖案形狀並無特別限制,可為任意圖案。例如可列舉直線狀、曲線狀、矩形狀、圓狀等。 Further, the pattern shape of the metal wiring is not particularly limited, and may be any pattern. For example, a linear shape, a curved shape, a rectangular shape, a circular shape, etc. are mentioned.

金屬配線的厚度並無特別限制,就印刷配線基板的高積體化的方面而言,較佳為1μm~1000μm,更佳為3μm~25μm,進而佳為10μm~20μm。 The thickness of the metal wiring is not particularly limited, and is preferably from 1 μm to 1000 μm, more preferably from 3 μm to 25 μm, even more preferably from 10 μm to 20 μm, in terms of high integration of the printed wiring board.

本發明中,可於不對金屬配線的表面進行粗面化處理的情況下確保後述絕緣樹脂層的初期密接性。因此,金屬配線的表面粗糙度Rz並無特別限制,就所得的印刷配線基板的高頻特性等方面而言,較佳為10μm以下,更佳為0.001μm~2.0μm,進而佳為0.01μm~0.9μm,特佳為0.02μm~0.5μm。 In the present invention, the initial adhesion of the insulating resin layer to be described later can be ensured without roughening the surface of the metal wiring. Therefore, the surface roughness Rz of the metal wiring is not particularly limited, and is preferably 10 μm or less, more preferably 0.001 μm to 2.0 μm, and still more preferably 0.01 μm in terms of high-frequency characteristics of the printed wiring board. 0.9 μm, particularly preferably 0.02 μm to 0.5 μm.

再者,Rz是依照JIS B 0601(1994年)來測定。 Further, Rz is measured in accordance with JIS B 0601 (1994).

該步驟中使用的附有金屬配線的絕緣基板的其他態樣可列舉:交替具有2個以上的絕緣基板及2層以上的金屬配線的多層配線基板。例如,多層配線基板亦可於絕緣基板12與金屬配線14之間依序具備其他金屬配線50(金屬配線層)及其他絕緣基板40(參照圖2)。再者,亦可於絕緣基板12與金屬配線14之間依序分別交替含有2層以上的其他金屬配線50及其他絕緣基板40。 Other aspects of the insulating substrate with metal wiring used in this step include a multilayer wiring board in which two or more insulating substrates and two or more metal wires are alternately arranged. For example, in the multilayer wiring board, another metal wiring 50 (metal wiring layer) and another insulating substrate 40 (see FIG. 2) may be sequentially provided between the insulating substrate 12 and the metal wiring 14. Further, two or more other metal wirings 50 and other insulating substrates 40 may be alternately arranged between the insulating substrate 12 and the metal wiring 14 in this order.

另外,附有金屬配線的絕緣基板亦可為所謂的剛性基板、柔性基板、剛柔結合基板。 Further, the insulating substrate with the metal wiring may be a so-called rigid substrate, a flexible substrate, or a rigid-flex substrate.

另外,絕緣基板中亦可形成有通孔。於在絕緣基板的兩面設有金屬配線的情形時,亦可藉由在該通孔內填充金屬(例如銅或銅合金),將兩面的金屬配線導通。 Further, a through hole may be formed in the insulating substrate. In the case where metal wiring is provided on both surfaces of the insulating substrate, the metal wirings on both sides may be electrically connected by filling a metal (for example, copper or copper alloy) in the through holes.

(硫醇化合物) (thiol compound)

該步驟中使用的硫醇化合物具有2個以上的反應性官能基X(其中矽烷醇基及矽原子鍵結水解性基除外),且反應性官能基X的至少1個具有後述式(1)所表示的官能基。藉由使用該化合物對金屬配線進行表面處理,可提高積層於其上的絕緣樹脂層的初期密接性及絕緣樹脂層的密接性的經時穩定性。 The thiol compound used in this step has two or more reactive functional groups X (excluding a sulfonyl group and a ruthenium atom-bonded hydrolyzable group), and at least one of the reactive functional groups X has the following formula (1) The functional group represented. By surface-treating the metal wiring by using the compound, the initial adhesion of the insulating resin layer laminated thereon and the stability with time of the adhesion of the insulating resin layer can be improved.

硫醇化合物所具有的反應性官能基X只要為與後述聚合物所具有的反應性官能基Y反應的官能基即可。例如可列舉式(1)所表示的官能基、一級胺基、二級胺基、異氰酸酯基、羧酸或羥基等。 The reactive functional group X of the thiol compound may be a functional group that reacts with the reactive functional group Y of the polymer described later. For example, a functional group represented by the formula (1), a primary amino group, a secondary amino group, an isocyanate group, a carboxylic acid or a hydroxyl group may, for example, be mentioned.

其中,就反應性更優異、絕緣樹脂層的密接性的經時 穩定性進一步提高的方面而言,較佳為選自由式(1)所表示的官能基、一級胺基、二級胺基及異氰酸酯基所組成的組群中的基。特別是更佳為式(1)所表示的基。 Among them, the reactivity is more excellent, and the adhesion of the insulating resin layer is over time. In terms of further improving the stability, a group selected from the group consisting of a functional group represented by the formula (1), a primary amino group, a secondary amino group, and an isocyanate group is preferred. In particular, it is more preferably a group represented by the formula (1).

其中,反應性官能基X中不包括矽烷醇基及矽原子鍵結水解性基。所謂矽烷醇基,是指羥基直接鍵結於矽原子而成的基(-Si-OH)。另外,所謂矽原子鍵結水解性基,是指鍵結於矽原子的水解性基(例如烷氧基直接鍵結於矽原子而成的烷氧基矽烷基(-Si-OR(R:烷基))。水解性基例如可例示:烷氧基;烴氧基;醯氧基;氟原子、氯原子、溴原子、碘原子等鹵素原子;異氰酸酯基;氰基;胺基;或醯胺基等。 Among them, the reactive functional group X does not include a decyl alcohol group and a ruthenium atom-bonded hydrolyzable group. The stanol group refers to a group (-Si-OH) in which a hydroxyl group is directly bonded to a ruthenium atom. Further, the hydrazine atom-bonding hydrolyzable group means a hydrolyzable group bonded to a ruthenium atom (for example, an alkoxy fluorenyl group in which an alkoxy group is directly bonded to a ruthenium atom (-Si-OR (R: alkane) The hydrolyzable group may, for example, be an alkoxy group; a hydrocarbyloxy group; a decyloxy group; a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom; an isocyanate group; a cyano group; an amine group; Base.

若硫醇化合物中含有該些基,則於金屬配線表面上形成親水性的二氧化矽的網狀(網絡)結構。若具有此種網絡,則水容易與金屬配線表面接觸,結果金屬配線表面被腐蝕,損及與絕緣樹脂層的密接性的經時穩定性。另外,於絕緣基板上亦形成二氧化矽的網絡結構,絕緣可靠性明顯下降。 When these groups are contained in the thiol compound, a network (network) structure of hydrophilic cerium oxide is formed on the surface of the metal wiring. When such a network is provided, water easily comes into contact with the surface of the metal wiring, and as a result, the surface of the metal wiring is corroded, and the stability with respect to the adhesion to the insulating resin layer is deteriorated with time. In addition, a network structure of germanium dioxide is also formed on the insulating substrate, and the insulation reliability is remarkably lowered.

硫醇化合物中含有2個以上的上述反應性官能基X。藉由含有2個以上的反應性官能基X,主要可利用一個反應性官能基X與金屬配線表面形成鍵結,且利用另一反應性官能基X與後述聚合物鍵結。 The thiol compound contains two or more of the above reactive functional groups X. By containing two or more reactive functional groups X, one reactive functional group X can be mainly used to form a bond with the surface of the metal wiring, and another reactive functional group X can be bonded to the polymer described later.

其中,就絕緣樹脂層的初期密接性及絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,反應性官能基X的個數較佳為3個以上,更佳為3個~20個,進而佳為 4個~10個,特佳為4個~6個。 In particular, the number of reactive functional groups X is preferably three or more, and more preferably three, in terms of the initial adhesion of the insulating resin layer and the stability with time of the adhesion of the insulating resin layer. 20, and then better 4 to 10, especially 4 to 6.

於反應性官能基X的個數為1個的情形時,絕緣樹脂層的初期密接性明顯變差。 When the number of the reactive functional groups X is one, the initial adhesion of the insulating resin layer is remarkably deteriorated.

作為硫醇化合物的反應性官能基X,含有至少1個以下的式(1)所表示的官能基。藉由硫醇化合物含有至少1個該官能基,絕緣樹脂層的初期密接性提高。 The reactive functional group X of the thiol compound contains at least one functional group represented by the formula (1). When the thiol compound contains at least one such functional group, the initial adhesion of the insulating resin layer is improved.

HS-L1-* 式(1) HS-L 1 -* type (1)

式(1)中的L1表示2價的脂肪族烴基。脂肪族烴基例如可列舉伸烷基、伸烯基或伸炔基。其中,就絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,較佳為碳數為1~20,更佳為碳數為2~10,特佳為碳數為4~8。 L 1 in the formula (1) represents a divalent aliphatic hydrocarbon group. Examples of the aliphatic hydrocarbon group include an alkyl group, an alkenyl group or an alkynylene group. In particular, in terms of further improving the stability of the adhesiveness of the insulating resin layer, the carbon number is preferably from 1 to 20, more preferably from 2 to 10, and particularly preferably from 4 to 8. .

2價的脂肪族烴基更具體可列舉亞甲基、伸乙基、伸丙基、伸異丙基、伸丁基等。 More specifically, the divalent aliphatic hydrocarbon group may, for example, be a methylene group, an ethyl group, a propyl group, an extended isopropyl group or a butyl group.

其中,就絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,式(1)中的HS基較佳為一級硫醇(即,較佳為直接鍵結於HS基的L1中的部分結構為-CH2-)。 Among them, the HS group in the formula (1) is preferably a primary thiol (i.e., preferably L 1 directly bonded to the HS group) in terms of further improvement in the stability of the adhesiveness of the insulating resin layer. The partial structure in is -CH 2 -).

另一方面,於-S-SH等二硫醚基或HS基鍵結於三嗪環或苯環而成的基的情形時,HS基的活性低。因此,於使用具有該些基的化合物的情形時,絕緣樹脂層的初期密接性極差。 On the other hand, in the case where a disulfide group such as -S-SH or a group in which an HS group is bonded to a triazine ring or a benzene ring, the activity of the HS group is low. Therefore, in the case of using a compound having such a group, the initial adhesion of the insulating resin layer is extremely poor.

硫醇化合物的反應性官能基X當量(g/eq)並無特別限制,就絕緣樹脂層的初期密接性或絕緣樹脂層的密接性 的經時穩定性更優異的方面而言,較佳為2100以下,更佳為400以下,進而佳為250以下。再者,下限並無特別限制,就硫醇化合物的合成方面的觀點而言,通常大多情況下超過40。 The reactive functional group X equivalent (g/eq) of the thiol compound is not particularly limited, and the initial adhesion of the insulating resin layer or the adhesion of the insulating resin layer is not particularly limited. In terms of more excellent stability over time, it is preferably 2,100 or less, more preferably 400 or less, and still more preferably 250 or less. Further, the lower limit is not particularly limited, and in many cases, from the viewpoint of the synthesis of the thiol compound, it is usually more than 40.

再者,所謂反應性官能基X當量,表示硫醇化合物中所含的反應性官能基X的每單位數量的分子的大小。 In addition, the reactive functional group X equivalent represents the size of the molecule per unit number of the reactive functional group X contained in the thiol compound.

硫醇化合物的分子量並無特別限制,就絕緣樹脂層的初期密接性更優異、於溶劑等中的溶解性優異的方面而言,較佳為8400以下,更佳為3000以下,特佳為2000以下。再者,下限並無特別限制,就硫醇化合物的合成方面的觀點而言,通常大多情況下超過80。 The molecular weight of the thiol compound is not particularly limited, and the insulating resin layer is more excellent in initial adhesion and is excellent in solubility in a solvent or the like, and is preferably 8400 or less, more preferably 3,000 or less, and particularly preferably 2000. the following. Further, the lower limit is not particularly limited, and in many cases, from the viewpoint of the synthesis of the thiol compound, it is usually more than 80.

硫醇化合物中的硫原子含量(硫原子的含有比例)並無特別限制,就絕緣樹脂層的密接性的經時穩定性更優異的方面而言,較佳為20wt%以上,更佳為24wt~70wt%。其中,就絕緣樹脂層的密接性的經時穩定性特別優異的方面而言,較佳為35wt%以上,更佳為35wt%~64wt%。 The content of the sulfur atom in the thiol compound (the content of the sulfur atom) is not particularly limited, and is preferably 20% by weight or more, and more preferably 24%, in terms of the stability of the adhesiveness of the insulating resin layer. ~70wt%. In particular, it is preferably 35 wt% or more, and more preferably 35 wt% to 64 wt%, from the viewpoint that the adhesion stability of the insulating resin layer is particularly excellent.

再者,該硫原子含量表示硫醇化合物的總分子量中的硫原子的含量(wt%)。 Further, the sulfur atom content indicates the content (wt%) of sulfur atoms in the total molecular weight of the thiol compound.

(硫醇化合物的合適態樣) (suitable aspect of thiol compound)

硫醇化合物的合適態樣可列舉以下的式(2)所表示的硫醇化合物。若為該化合物,則絕緣樹脂層的初期密接性或絕緣樹脂層的密接性的經時穩定性更優異。 A suitable form of the thiol compound is a thiol compound represented by the following formula (2). In the case of this compound, the initial adhesion of the insulating resin layer or the adhesion stability of the insulating resin layer is more excellent with time.

式(2)中,L1與上述式(1)中的L1為相同含意,合適的範圍亦與上述相同。 Formula (2), L 1 is of the formula L 1 is the same meaning, a suitable range is also the same as above (1).

式(2)中,L2及L3分別獨立表示單鍵或2價的連結基。2價的連結基可列舉:2價的脂肪族烴基(較佳為碳數為1~8)、2價的芳香族烴基(較佳為碳數為6~12)、-O-、-S-、-SO2-、-N(R)-(R:烷基)、-CO-、-NH-、-COO-、-CONH-或將該些基組合而成的基(例如伸烷氧基、伸烷氧基羰基、伸烷基羰氧基等)等。 In the formula (2), L 2 and L 3 each independently represent a single bond or a divalent linking group. Examples of the divalent linking group include a divalent aliphatic hydrocarbon group (preferably having a carbon number of 1 to 8), a divalent aromatic hydrocarbon group (preferably having a carbon number of 6 to 12), -O-, and -S. -, -SO 2 -, -N(R)-(R:alkyl), -CO-, -NH-, -COO-, -CONH- or a combination of these groups (for example, alkylene oxide) a group, an alkoxycarbonyl group, an alkylcarbonyloxy group, etc.).

2價的脂肪族烴基(例如伸烷基)例如可列舉亞甲基、伸乙基、伸丙基或伸丁基等。 The divalent aliphatic hydrocarbon group (for example, an alkylene group) may, for example, be a methylene group, an exoethyl group, a propyl group or a butyl group.

2價的芳香族烴基例如可列舉伸苯基、伸萘基等。 Examples of the divalent aromatic hydrocarbon group include a stretched phenyl group and an extended naphthyl group.

其中,就絕緣樹脂層的初期密接性更優異的方面而言,L2及L3較佳為2價的脂肪族烴基、-CO-、-O-、-S-或將該些基組合而成的基。 In particular, L 2 and L 3 are preferably a divalent aliphatic hydrocarbon group, —CO—, —O—, —S— or a combination of these groups, in terms of excellent initial adhesion of the insulating resin layer. The basis of the formation.

式(2)中,R1表示選自由上述式(1)所表示的官能基、一級胺基、二級胺基及異氰酸酯基所組成的組群中的基。 In the formula (2), R 1 represents a group selected from the group consisting of a functional group represented by the above formula (1), a primary amino group, a secondary amino group, and an isocyanate group.

式(2)中,n表示1以上的整數。其中,就合成容易、絕緣樹脂層的初期密接性更優異的方面而言,較佳為1~19,更佳為2~9,進而佳為3~7。 In the formula (2), n represents an integer of 1 or more. In particular, from the viewpoint of easy synthesis and excellent initial adhesion of the insulating resin layer, it is preferably from 1 to 19, more preferably from 2 to 9, and still more preferably from 3 to 7.

式(2)中,m表示1以上的整數。其中,就合成容易、絕緣樹脂層的初期密接性更優異的方面而言,較佳為1~19,更佳為1~9,進而佳為1~5。 In the formula (2), m represents an integer of 1 or more. In particular, from the viewpoint of easy synthesis and excellent initial adhesion of the insulating resin layer, it is preferably from 1 to 19, more preferably from 1 to 9, and even more preferably from 1 to 5.

n+m並無特別限制,較佳為3以上,更佳為3~20, 進而佳為4~10,特佳為4~8。 n+m is not particularly limited, and is preferably 3 or more, more preferably 3 to 20. Furthermore, the best is 4~10, and the best is 4~8.

式(2)中,X表示可含有硫原子、氮原子或氧原子的n+m價的烴基。 In the formula (2), X represents an n+m-valent hydrocarbon group which may contain a sulfur atom, a nitrogen atom or an oxygen atom.

烴基的碳數並無特別限制,就操作性、於溶劑中的溶解性等方面而言,較佳為碳數為1~20,更佳為碳數為1~8。烴基更具體可列舉脂肪族烴基、芳香族烴基或將該些基組合而成的基。 The carbon number of the hydrocarbon group is not particularly limited, and the carbon number is preferably from 1 to 20, more preferably from 1 to 8, in terms of workability, solubility in a solvent, and the like. More specifically, the hydrocarbon group may be an aliphatic hydrocarbon group, an aromatic hydrocarbon group or a group in which the groups are combined.

脂肪族烴基可為直鏈狀、分支狀、環狀的任一種,就操作性優異、於溶劑中的溶解性更優異的方面而言,較佳為碳數為1~10,更佳為碳數為1~8。 The aliphatic hydrocarbon group may be any of a linear chain, a branched form, and a cyclic form, and is preferably a carbon number of 1 to 10, more preferably carbon, in terms of excellent workability and solubility in a solvent. The number is 1~8.

芳香族烴基並無特別限制,就操作性優異、於溶劑中的溶解性更優異的方面而言,較佳為碳數為1~10,更佳為碳數為1~7。 The aromatic hydrocarbon group is not particularly limited, and is preferably from 1 to 10, more preferably from 1 to 7, in terms of excellent workability and superior solubility in a solvent.

硫醇化合物的更合適的態樣可列舉以下的式(3)所表示的硫醇化合物。若為該化合物,則絕緣樹脂層的初期密接性或絕緣樹脂層的密接性的經時穩定性進一步提高。 A more suitable aspect of the thiol compound is exemplified by the thiol compound represented by the following formula (3). In the case of this compound, the initial adhesion of the insulating resin layer or the stability of the adhesiveness of the insulating resin layer is further improved.

式(3)中,L1與上述式(1)中的L1為相同含意,合適的範圍亦與上述相同。 Of formula (3), L 1 and L 1 is the same meaning, a suitable range is also the same as described above in the formula (1).

式(3)中,L2與上述式(2)中的L2為相同含意,合適的範圍亦與上述相同。 Of formula (3), L 2 is also the same as the range of the above formula (2) in the same meaning as L 2, the right.

式(3)中,Y表示可含有硫原子、氮原子或氧原子的 p價的脂肪族烴基。脂肪族烴基的定義與上述X中的脂肪族烴基的定義為相同含意,合適範圍亦相同。 In the formula (3), Y represents a sulfur atom, a nitrogen atom or an oxygen atom. A p-valent aliphatic hydrocarbon group. The definition of the aliphatic hydrocarbon group has the same meaning as the definition of the aliphatic hydrocarbon group in the above X, and the suitable range is also the same.

再者,Y的合適態樣可列舉以下的式(4)~式(6)所表示的基。 Further, examples of suitable aspects of Y include the groups represented by the following formulas (4) to (6).

式(5)中,L4表示氧原子或可含有氧原子的二價的脂肪族烴基(碳數較佳為1~20,更佳為1~10。再者,該碳數是指該基中所含的碳的個數的合計值)。 In the formula (5), L 4 represents an oxygen atom or a divalent aliphatic hydrocarbon group which may contain an oxygen atom (the number of carbon atoms is preferably from 1 to 20, more preferably from 1 to 10. Further, the carbon number means the group) The total value of the number of carbons contained in the base).

式(4)~式(6)中,*表示鍵結位置。 In the formulas (4) to (6), * indicates the bonding position.

式(3)中,p表示4以上的整數。其中,就合成容易、絕緣樹脂層的初期密接性更優異的方面而言,較佳為4~20,更佳為4~6。 In the formula (3), p represents an integer of 4 or more. In particular, it is preferably 4 to 20, and more preferably 4 to 6, in terms of easy synthesis and excellent initial adhesion of the insulating resin layer.

硫醇化合物可單獨使用一種,亦可同時使用兩種以上。 The thiol compound may be used alone or in combination of two or more.

關於硫醇化合物的具體例,例如可列舉以下示出的化合物。其中,就絕緣樹脂層的初期密接性更優異的方面而言,可較佳地列舉季戊四醇四(3-巰基丙酸酯)(Pentaerythritol tetrakis(3-mercaptopropionate))、二季戊四醇六(3-巰基丙酸酯)(Dipentaerythritol hexakis(3-mercaptopropionate))、四-(7-巰基-2,5-二硫雜庚 基)甲烷(tetrakis(7-mercapto-2,5-dithiaheptyl)methane)等,特佳為四-(7-巰基-2,5-二硫雜庚基)甲烷。 Specific examples of the thiol compound include the compounds shown below. Among them, in terms of the excellent initial adhesion of the insulating resin layer, pentaerythritol tetrakis (3-mercaptopropionate) and dipentaerythritol hexa(3-mercaptopropene) are preferably mentioned. Dipentaerythritol hexakis (3-mercaptopropionate), tetrakis-(7-mercapto-2,5-dithiazepine Methyl (tetrakis (7-mercapto-2, 5-dithiaheptyl) methane), etc., particularly preferably tetrakis-(7-fluorenyl-2,5-dithiaheptyl)methane.

(步驟的順序) (order of steps)

該步驟中,以硫醇化合物將上述附有金屬配線的絕緣基板的絕緣基板表面及金屬配線表面覆蓋。 In this step, the surface of the insulating substrate and the surface of the metal wiring of the insulating substrate with the metal wiring described above are covered with a thiol compound.

該步驟的方法只要可使附有金屬配線的絕緣基板與硫醇化合物接觸,則並無特別限制,可採用在附有金屬配線的絕緣基板上塗佈硫醇化合物、或於液狀的硫醇化合物中浸漬附有金屬配線的絕緣基板等公知的方法。更具體可列 舉浸泡浸漬、噴淋噴霧、噴射塗佈、旋轉塗佈等,就處理的簡便性、調整處理時間的容易性的方面而言,較佳為浸泡浸漬、噴淋噴霧、噴射塗佈。 The method of this step is not particularly limited as long as the insulating substrate with the metal wiring is brought into contact with the thiol compound, and the thiol compound or the liquid thiol may be applied to the insulating substrate with the metal wiring. A known method of immersing an insulating substrate with a metal wiring in a compound is known. More specific The immersion immersion, the spray coating, the spray coating, the spin coating, and the like are preferably soaking, spraying, and spray coating in terms of ease of handling and ease of adjustment of the treatment time.

再者,視需要亦可將含有硫醇化合物及溶劑的表面處理液塗佈於附有金屬配線的絕緣基板上(金屬配線側的表面上),或於該表面處理液中浸漬附有金屬配線的絕緣基板。若為該態樣,則容易控制鍵結於金屬配線上的硫醇化合物的量,絕緣樹脂層的初期密接性更容易提高。 Further, a surface treatment liquid containing a thiol compound and a solvent may be applied to an insulating substrate with metal wiring (on the surface of the metal wiring side) as needed, or metal wiring may be immersed in the surface treatment liquid. Insulating substrate. In this case, it is easy to control the amount of the thiol compound bonded to the metal wiring, and the initial adhesion of the insulating resin layer is more easily improved.

以下,對所使用的表面處理液的構成加以詳述。 Hereinafter, the configuration of the surface treatment liquid to be used will be described in detail.

表面處理液中的硫醇化合物的含量並無特別限制,就絕緣樹脂層的初期密接性或絕緣樹脂層的密接性的經時穩定性更優異的方面而言,較佳為0.01mM~10mM(毫莫耳),更佳為0.05mM~3mM,進而佳為0.1mM~1mM。若硫醇化合物的含量過多,則鍵結於金屬配線的硫醇化合物的量的控制變困難,並且不經濟。若硫醇化合物的含量過少,則硫醇化合物的鍵結耗費時間,生產性差。 The content of the thiol compound in the surface treatment liquid is not particularly limited, and is preferably 0.01 mM to 10 mM in terms of excellent initial adhesion of the insulating resin layer or adhesion stability of the insulating resin layer. More preferably, it is 0.05 mM to 3 mM, and more preferably 0.1 mM to 1 mM. If the content of the thiol compound is too large, control of the amount of the thiol compound bonded to the metal wiring becomes difficult and uneconomical. When the content of the thiol compound is too small, the bonding of the thiol compound takes time and the productivity is poor.

表面處理液所含的溶劑的種類並無特別限制,例如可列舉水、醇系溶劑(例如甲醇、乙醇、異丙醇)、酮系溶劑(例如丙酮、甲基乙基酮、環己酮)、醯胺系溶劑(例如甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮)、腈系溶劑(例如乙腈、丙腈)、酯系溶劑(例如乙酸甲酯、乙酸乙酯、γ-丁內酯)、碳酸酯系溶劑(例如碳酸二甲酯、碳酸二乙酯)、醚系溶劑(例如溶纖劑、四氫呋喃)、鹵素系溶劑、二醇醚系溶劑(例如二丙二醇甲醚)、二醇酯 系溶劑(例如丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯)等。亦可將該些溶劑混合使用兩種以上。 The type of the solvent to be contained in the surface treatment liquid is not particularly limited, and examples thereof include water, an alcohol solvent (for example, methanol, ethanol, or isopropanol), and a ketone solvent (for example, acetone, methyl ethyl ketone, and cyclohexanone). , amide-based solvents (such as formamide, dimethylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone), nitrile solvents (such as acetonitrile, propionitrile), ester solvents (such as methyl acetate) , ethyl acetate, γ-butyrolactone), carbonate-based solvent (for example, dimethyl carbonate, diethyl carbonate), ether solvent (for example, cellosolve, tetrahydrofuran), halogen solvent, glycol ether solvent (eg dipropylene glycol methyl ether), glycol ester A solvent (for example, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate) or the like. These solvents may be used in combination of two or more kinds.

其中,就硫醇化合物的溶解性的方面而言,較佳為酮系溶劑、二醇酯系溶劑、醇系溶劑。 Among these, a ketone solvent, a glycol ester solvent, and an alcohol solvent are preferable in terms of solubility of a thiol compound.

表面處理液中的溶劑的含量並無特別限制,相對於處理液總量,較佳為50wt%~99.99wt%,更佳為90wt%~99.99wt%,特佳為95wt%~99.99wt%。 The content of the solvent in the surface treatment liquid is not particularly limited, and is preferably from 50% by weight to 99.99% by weight, more preferably from 90% by weight to 99.99% by weight, particularly preferably from 95% by weight to 99.99% by weight, based on the total amount of the treating liquid.

表面處理液中,較佳為實質上不含具有與硫醇化合物反應的官能基的樹脂(以下亦稱為樹脂X。例如環氧樹脂、具有丙烯酸酯基的丙烯酸系樹脂等)。若表面處理液中含有樹脂X,則與上述硫醇化合物之間進行反應,損及處理液自身的穩定性。進而,難以使所需量的硫醇化合物鍵結於金屬配線上,結果絕緣樹脂層的初期密接性下降。 The surface treatment liquid preferably contains a resin having a functional group reactive with a thiol compound (hereinafter also referred to as a resin X. For example, an epoxy resin or an acrylic resin having an acrylate group). When the surface treatment liquid contains the resin X, it reacts with the above-mentioned thiol compound, and the stability of the treatment liquid itself is impaired. Further, it is difficult to bond a required amount of the thiol compound to the metal wiring, and as a result, the initial adhesion of the insulating resin layer is lowered.

再者,所謂實質上不含樹脂X,是指表面處理液中的樹脂X的含量相對於處理液總量而為1wt%以下。特佳為不含樹脂X(0wt%)。 In addition, the term "substantially free of the resin X" means that the content of the resin X in the surface treatment liquid is 1% by weight or less based on the total amount of the treatment liquid. It is particularly preferred to be free of resin X (0 wt%).

再者,上述處理液中亦可含有pH調整劑、界面活性劑、防腐劑、防析出劑等添加劑。 Further, the treatment liquid may further contain an additive such as a pH adjuster, a surfactant, a preservative, or an anti-precipitation agent.

就控制硫醇化合物的附著量(鍵結量)的方面而言,與附有金屬配線的絕緣基板接觸時的硫醇化合物或表面處理液的溫度較佳為5℃~75℃的範圍,更佳為10℃~45℃的範圍,進而佳為15℃~35℃的範圍。 In terms of controlling the amount of adhesion (bonding amount) of the thiol compound, the temperature of the thiol compound or the surface treatment liquid when it is in contact with the insulating substrate with the metal wiring is preferably in the range of 5 ° C to 75 ° C, and more preferably It is preferably in the range of 10 ° C to 45 ° C, and more preferably in the range of 15 ° C to 35 ° C.

另外,就生產性及控制硫醇化合物的附著量(鍵結量)方面而言,接觸時間較佳為30秒鐘~120分鐘的範圍,更 佳為3分鐘~60分鐘的範圍,進而佳為5分鐘~30分鐘的範圍。 Further, in terms of productivity and control of the amount of bonding (bonding amount) of the thiol compound, the contact time is preferably in the range of 30 seconds to 120 minutes, and more It is preferably in the range of 3 minutes to 60 minutes, and is preferably in the range of 5 minutes to 30 minutes.

[第1清洗步驟] [1st cleaning step]

該步驟為使用溶劑(第1清洗溶劑)對附有金屬配線的絕緣基板進行清洗,將絕緣基板表面上的硫醇化合物去除的步驟。藉由進行該步驟,可將與金屬配線鍵結的硫醇化合物以外的硫醇化合物、特別是絕緣基板表面上的硫醇化合物清洗去除。具體而言,如圖1(C)所示,絕緣基板12上的硫醇化合物層16實質上被去除,並且金屬配線14上的多餘的硫醇化合物亦被去除,形成鍵結於金屬配線14的表面的硫醇化合物的層(硫醇化合物層)18。再者,該步驟結束後,亦可於不損及本發明的效果的範圍內於絕緣基板12上殘存硫醇化合物。 This step is a step of cleaning the insulating substrate with the metal wiring using a solvent (first cleaning solvent) to remove the thiol compound on the surface of the insulating substrate. By performing this step, a thiol compound other than the thiol compound bonded to the metal wiring, in particular, a thiol compound on the surface of the insulating substrate can be removed by washing. Specifically, as shown in FIG. 1(C), the thiol compound layer 16 on the insulating substrate 12 is substantially removed, and excess thiol compound on the metal wiring 14 is also removed to form a bond to the metal wiring 14. A layer of a thiol compound (thiol compound layer) 18 on the surface. Further, after the completion of the step, the thiol compound may remain on the insulating substrate 12 within a range that does not impair the effects of the present invention.

首先,對該步驟中使用的材料(第1清洗溶劑)加以說明,其後對該步驟的順序加以說明。 First, the material (first cleaning solvent) used in this step will be described, and the order of the steps will be described later.

(第1清洗溶劑) (1st cleaning solvent)

對附有金屬配線的絕緣基板進行清洗的第1清洗步驟中使用的溶劑(第1清洗溶劑)的種類並無特別限定,只要為可將絕緣基板上的硫醇化合物去除的溶劑即可。其中,較佳為溶解硫醇化合物的溶劑。藉由使用該溶劑,可將堆積於絕緣基板上的多餘的硫醇化合物、或金屬配線上的多餘的硫醇化合物等更高效地去除。 The type of the solvent (first cleaning solvent) to be used in the first cleaning step of cleaning the insulating substrate with the metal wiring is not particularly limited, and may be any solvent that can remove the thiol compound on the insulating substrate. Among them, a solvent which dissolves a thiol compound is preferred. By using this solvent, excess thiol compound deposited on the insulating substrate or excess thiol compound on the metal wiring can be removed more efficiently.

溶劑的種類例如可列舉:水、醇系溶劑(例如甲醇、乙醇、丙醇)、酮系溶劑(例如丙酮、甲基乙基酮、環己酮)、 醯胺系溶劑(例如甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、N-乙基吡咯烷酮)、腈系溶劑(例如乙腈、丙腈)、酯系溶劑(例如乙酸甲酯、乙酸乙酯、γ-丁內酯)、碳酸酯系溶劑(例如碳酸二甲酯、碳酸二乙酯)、醚系溶劑(例如溶纖劑、四氫呋喃)、鹵素系溶劑、二醇醚系溶劑(例如二丙二醇甲醚)、二醇酯系溶劑(例如丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯)等。亦可將該些溶劑混合使用兩種以上。 Examples of the solvent include water, an alcohol solvent (for example, methanol, ethanol, or propanol), and a ketone solvent (for example, acetone, methyl ethyl ketone, and cyclohexanone). a guanamine-based solvent (for example, formamide, dimethylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone), a nitrile solvent (for example, acetonitrile, propionitrile), an ester solvent (for example, methyl acetate, Ethyl acetate, γ-butyrolactone), carbonate-based solvent (for example, dimethyl carbonate or diethyl carbonate), ether solvent (for example, cellosolve, tetrahydrofuran), halogen solvent, glycol ether solvent ( For example, dipropylene glycol methyl ether), a glycol ester solvent (for example, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate) or the like. These solvents may be used in combination of two or more kinds.

其中,就硫醇化合物的去除性更優異的方面而言,較佳為醇系溶劑、酮系溶劑(較佳為環己酮)、二醇酯系溶劑(較佳為丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯)、醯胺系溶劑(較佳為N-乙基吡咯烷酮)或該些溶劑與水的混合溶劑。 Among them, an alcohol solvent, a ketone solvent (preferably cyclohexanone), a glycol ester solvent (preferably propylene glycol monomethyl ether acetate) is preferred in terms of more excellent thiol compound removal property. An ester, a diethylene glycol monoethyl ether acetate, a guanamine solvent (preferably N-ethylpyrrolidone) or a mixed solvent of the solvent and water.

所使用的溶劑的沸點(25℃、一大氣壓)並無特別限制,就安全性的觀點而言,較佳為75℃~200℃,更佳為80℃~180℃。 The boiling point of the solvent to be used (25 ° C, one atmosphere) is not particularly limited, and from the viewpoint of safety, it is preferably from 75 ° C to 200 ° C, more preferably from 80 ° C to 180 ° C.

(步驟的順序) (order of steps)

清洗方法並無特別限制,可採用公知的方法。例如可列舉於附有金屬配線的絕緣基板上(金屬配線側的表面上)塗佈第1清洗溶劑的方法、於第1清洗溶劑中浸漬附有金屬配線的絕緣基板的方法等。 The washing method is not particularly limited, and a known method can be employed. For example, a method of applying a first cleaning solvent on an insulating substrate with a metal wiring (on the surface on the metal wiring side), a method of immersing an insulating substrate with a metal wiring in the first cleaning solvent, and the like may be mentioned.

另外,就控制硫醇化合物的附著量(鍵結量)的方面而言,第1清洗溶劑的液溫較佳為5℃~60℃的範圍,更佳為15℃~35℃的範圍。 In addition, the liquid temperature of the first cleaning solvent is preferably in the range of 5 ° C to 60 ° C, and more preferably in the range of 15 ° C to 35 ° C, in terms of controlling the amount of bonding (bonding amount) of the thiol compound.

另外,就生產性及控制硫醇化合物的附著量(鍵結量)的方面而言,附有金屬配線的絕緣基板與第1清洗溶劑的接觸時間較佳為10秒鐘~10分鐘的範圍,更佳為15秒鐘~5分鐘的範圍。 In addition, in terms of productivity and control of the amount of adhesion (bonding amount) of the thiol compound, the contact time between the insulating substrate with the metal wiring and the first cleaning solvent is preferably in the range of 10 seconds to 10 minutes. More preferably in the range of 15 seconds to 5 minutes.

(硫醇化合物層) (thiol compound layer)

如圖1(C)所示,經由上述第1清洗步驟而獲得的鍵結於金屬配線的表面的硫醇化合物層18的厚度並無特別限制,就絕緣樹脂層的初期密接性更優異的方面而言,較佳為0.1nm~10nm,更佳為0.1nm~3nm,進而佳為0.1nm~2nm。 As shown in Fig. 1(C), the thickness of the thiol compound layer 18 bonded to the surface of the metal wiring obtained through the first cleaning step is not particularly limited, and the initial adhesion of the insulating resin layer is more excellent. In particular, it is preferably 0.1 nm to 10 nm, more preferably 0.1 nm to 3 nm, and still more preferably 0.1 nm to 2 nm.

再者,為了控制硫醇化合物層18的厚度或被覆率,亦可將上述第1被覆步驟與第1清洗步驟分別連續實施2次以上。此時,第1次的第1被覆步驟中使用的硫醇化合物、與第2次的第1被覆步驟中使用的硫醇化合物亦可不同。 Further, in order to control the thickness or the coverage of the thiol compound layer 18, the first coating step and the first washing step may be carried out twice or more continuously. In this case, the thiol compound used in the first first coating step may be different from the thiol compound used in the second first coating step.

[第2被覆步驟] [2nd covering step]

該步驟為使用分子內具有至少3個以上的與反應性官能基X反應的反應性官能基Y的聚合物,將經硫醇化合物覆蓋的金屬配線表面及絕緣基板表面覆蓋的步驟。換言之,該步驟為以聚合物將附有金屬配線的絕緣基板的表面(特別是金屬配線側的表面)覆蓋的步驟。更具體而言,如圖1(D)所示,於絕緣基板12表面上及經硫醇化合物層18覆蓋的金屬配線14表面上形成聚合物的層(聚合物層)20。特別是硫醇化合物層18上的聚合物經由反應性官能基Y而鍵結於硫醇化合物層18。 This step is a step of covering the surface of the metal wiring covered with the thiol compound and the surface of the insulating substrate using a polymer having at least three or more reactive functional groups Y reactive with the reactive functional group X in the molecule. In other words, this step is a step of covering the surface of the insulating substrate with the metal wiring (particularly the surface on the metal wiring side) with the polymer. More specifically, as shown in FIG. 1(D), a polymer layer (polymer layer) 20 is formed on the surface of the insulating substrate 12 and on the surface of the metal wiring 14 covered with the thiol compound layer 18. In particular, the polymer on the thiol compound layer 18 is bonded to the thiol compound layer 18 via the reactive functional group Y.

藉由該步驟,聚合物以將硫醇化合物所鍵結的金屬配線的表面覆蓋的方式鍵結,後述絕緣樹脂層的初期密接性或絕緣樹脂層的密接性的經時穩定性提高。 By this step, the polymer is bonded so as to cover the surface of the metal wiring to which the thiol compound is bonded, and the initial adhesion of the insulating resin layer or the temporal stability of the adhesion of the insulating resin layer described later is improved.

首先,對該步驟中使用的材料(聚合物)加以說明,然後對該步驟的順序加以說明。 First, the material (polymer) used in the step will be described, and the order of the steps will be described.

(聚合物) (polymer)

該步驟中使用的聚合物為分子內具有至少3個以上的與上述反應性官能基X反應的反應性官能基Y的聚合物。該聚合物經由反應性官能基Y,與上述鍵結於金屬配線的硫醇化合物的未反應的反應性官能基X鍵結。所鍵結的聚合物發揮緩和金屬配線與形成於其上的絕緣樹脂層的應力的作用,有助於提高絕緣樹脂層的初期密接性及絕緣樹脂層的密接性的經時穩定性。 The polymer used in this step is a polymer having at least three or more reactive functional groups Y reactive with the above-mentioned reactive functional group X in the molecule. The polymer is bonded to the unreacted reactive functional group X of the above-described thiol compound bonded to the metal wiring via the reactive functional group Y. The bonded polymer serves to relax the stress of the metal wiring and the insulating resin layer formed thereon, and contributes to improving the initial adhesion of the insulating resin layer and the stability of the insulating resin layer with time.

反應性官能基Y只要為與上述反應性官能基X反應的官能基,則並無特別限制。例如可列舉羥基、一級胺基、二級胺基、環氧基(特佳為縮水甘油基)、丙烯酸酯基或甲基丙烯酸酯基等。 The reactive functional group Y is not particularly limited as long as it is a functional group reactive with the above reactive functional group X. For example, a hydroxyl group, a primary amino group, a secondary amino group, an epoxy group (particularly a glycidyl group), an acrylate group, a methacrylate group, etc. are mentioned.

其中,就反應性更優異、絕緣樹脂層的初期密接性進一步提高的方面而言,較佳為環氧基、丙烯酸酯基或甲基丙烯酸酯基,進而佳為環氧基。 In particular, an epoxy group, an acrylate group or a methacrylate group is preferred from the viewpoint of further improving the reactivity and further improving the initial adhesion of the insulating resin layer, and more preferably an epoxy group.

聚合物分子中所含的反應性官能基Y的個數為3個以上。其中,就絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,較佳為10以上,更佳為50以上,特佳為200以上。上限並無特別限制,就聚合物的溶解性及反應 的容易性的方面而言,較佳為1000以下。 The number of reactive functional groups Y contained in the polymer molecule is three or more. In particular, in view of further improving the stability with time of the adhesiveness of the insulating resin layer, it is preferably 10 or more, more preferably 50 or more, and particularly preferably 200 or more. The upper limit is not particularly limited, and the solubility and reaction of the polymer are In terms of easiness, it is preferably 1000 or less.

若聚合物中所含的反應性官能基Y的個數小於3個,則無法充分形成與硫醇化合物的網絡結構,絕緣樹脂層的密接性的經時穩定性極差。 When the number of the reactive functional groups Y contained in the polymer is less than three, the network structure of the thiol compound cannot be sufficiently formed, and the stability with time of the adhesiveness of the insulating resin layer is extremely poor.

聚合物的反應性官能基Y當量(g/eq)並無特別限制,就絕緣樹脂層的密接性的經時穩定性更優異的方面而言,較佳為2000以下,更佳為1000以下,進而佳為200以下。再者,下限並無特別限制,就聚合物的合成方面的觀點而言,通常大多情況下為40以上。 The Y-equivalent (g/eq) of the reactive functional group of the polymer is not particularly limited, and is preferably 2,000 or less, more preferably 1,000 or less, from the viewpoint of further excellent stability of the adhesiveness of the insulating resin layer. Further, it is preferably 200 or less. Further, the lower limit is not particularly limited, and in many cases, from the viewpoint of the synthesis of the polymer, it is usually 40 or more.

再者,所謂反應性官能基Y當量,表示聚合物中所含的反應性官能基Y的每單位數量的分子的大小。 In addition, the reactive functional group Y equivalent represents the size of the molecule per unit number of the reactive functional group Y contained in the polymer.

聚合物的數量平均分子量並無特別限制,就絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,較佳為5000以上,更佳為7500以上,進而佳為10000以上,特佳為17500以上,最佳為36000以上。上限並無特別限制,就聚合物的溶解性等操作性更優異的方面而言,較佳為500000以下,更佳為150000以下。 The number average molecular weight of the polymer is not particularly limited, and is preferably 5,000 or more, more preferably 7,500 or more, and still more preferably 10,000 or more, from the viewpoint of further improving the stability of the adhesiveness of the insulating resin layer. It is 17500 or more, and the best is 36000 or more. The upper limit is not particularly limited, and is preferably 500,000 or less, and more preferably 150,000 or less, from the viewpoint of more excellent workability such as solubility of the polymer.

再者,亦可併用數量平均分子量不同的環氧樹脂。 Further, an epoxy resin having a different number and average molecular weight may be used in combination.

聚合物的種類並無特別限制,例如可列舉聚醯亞胺樹脂、環氧樹脂、胺基甲酸酯樹脂、聚乙烯樹脂、聚酯樹脂、酚醛清漆樹脂、甲酚樹脂、丙烯酸系樹脂、甲基丙烯酸系樹脂、苯乙烯樹脂等。其中,就材料的獲取性或成膜性等方面而言,較佳為丙烯酸系樹脂、甲基丙烯酸系樹脂。 The type of the polymer is not particularly limited, and examples thereof include a polyimide resin, an epoxy resin, a urethane resin, a polyethylene resin, a polyester resin, a novolac resin, a cresol resin, an acrylic resin, and a Acrylic resin, styrene resin, and the like. Among them, an acrylic resin or a methacrylic resin is preferable in terms of material availability, film formability, and the like.

(聚合物的合適態樣) (suitable aspect of the polymer)

聚合物的合適態樣可列舉具有以下的式(7)所表示的重複單元的聚合物。若為該聚合物,則絕緣樹脂層的密接性的經時穩定性進一步提高。 A suitable form of the polymer is a polymer having a repeating unit represented by the following formula (7). When it is this polymer, the stability with respect to the adhesiveness of the insulating resin layer is further improved.

式(7)中,R2表示氫原子或烷基。就容易合成的方面而言,烷基較佳為碳數為1~5,更佳為碳數為1~3。 In the formula (7), R 2 represents a hydrogen atom or an alkyl group. In terms of ease of synthesis, the alkyl group preferably has a carbon number of from 1 to 5, more preferably a carbon number of from 1 to 3.

式(7)中,L5表示單鍵或2價的連結基。2價的連結基的定義與式(2)中的L2及L3所表示的2價的連結基的定義為相同含意。 In the formula (7), L 5 represents a single bond or a divalent linking group. The definition of the divalent linking group has the same meaning as the definition of the divalent linking group represented by L 2 and L 3 in the formula (2).

就絕緣樹脂層的密接性的經時穩定性更優異的方面而言,L5較佳為2價的脂肪族烴基、-CO-、-O-或將該些基組合而成的基。 L 5 is preferably a divalent aliphatic hydrocarbon group, -CO-, -O- or a group in which these groups are combined, in terms of more excellent stability with respect to the adhesion of the insulating resin layer.

式(7)中,Z表示環氧基、丙烯酸酯基及甲基丙烯酸酯基。其中,就絕緣樹脂層的初期密接性或絕緣樹脂層的密接性的經時穩定性更優異的方面而言,較佳為環氧基。 In the formula (7), Z represents an epoxy group, an acrylate group, and a methacrylate group. In particular, an epoxy group is preferred in terms of excellent initial adhesion of the insulating resin layer or adhesion stability of the insulating resin layer.

聚合物的其他合適態樣可列舉環氧樹脂。所使用的環氧樹脂只要為至少具有3個以上的環氧基的樹脂,則並無特別限制,可使用公知的樹脂(例如縮水甘油醚型環氧樹脂、縮水甘油酯型環氧樹脂、縮水甘油胺型環氧樹脂、聚 甲基丙烯酸縮水甘油酯等)。 Other suitable aspects of the polymer include epoxy resins. The epoxy resin to be used is not particularly limited as long as it has at least three epoxy groups, and a known resin (for example, a glycidyl ether epoxy resin, a glycidyl ester epoxy resin, or a shrinkage) can be used. Glyceramine type epoxy resin, poly Glycidyl methacrylate, etc.).

(步驟的順序) (order of steps)

該步驟中,以聚合物將上述附有金屬配線的絕緣基板的絕緣基板表面及金屬配線表面覆蓋。 In this step, the surface of the insulating substrate and the surface of the metal wiring on which the metal wiring-attached insulating substrate is attached are covered with a polymer.

該步驟的方法只要可使附有金屬配線的絕緣基板與聚合物接觸,則並無特別限制,可採用在附有金屬配線的絕緣基板上塗佈聚合物(塗佈法)、或在附有金屬配線的絕緣基板上層疊聚合物(層疊法)等公知的方法。塗佈法的方法例如可列舉浸泡浸漬、噴淋噴霧、噴射塗佈、旋轉塗佈等,就處理的簡便性、調整處理時間的容易性的方面而言,較佳為浸泡浸漬、噴淋噴霧、噴射塗佈。 The method of this step is not particularly limited as long as the insulating substrate with the metal wiring is brought into contact with the polymer, and the polymer may be coated on the insulating substrate with the metal wiring (coating method) or attached thereto. A known method such as laminating a polymer (lamination method) on an insulating substrate of a metal wiring is used. Examples of the method of the coating method include soaking, spraying, spray coating, spin coating, etc., and in terms of ease of handling and easiness of adjusting the treatment time, it is preferred to soak the dipping and spraying the spray. , spray coating.

再者,視需要亦可將含有聚合物及溶劑的聚合物組成物塗佈於附有金屬配線的絕緣基板上(金屬配線側的表面上)、或於該聚合物組成物中浸漬附有金屬配線的絕緣基板。若為該態樣,則容易控制鍵結於經硫醇化合物覆蓋的金屬配線上的聚合物的量,絕緣樹脂層的密接性的經時穩定性容易進一步提高。 Further, if necessary, a polymer composition containing a polymer and a solvent may be applied onto an insulating substrate with a metal wiring (on the surface of the metal wiring side), or a metal is impregnated in the polymer composition. Insulated substrate for wiring. In this case, the amount of the polymer bonded to the metal wiring covered with the thiol compound can be easily controlled, and the stability with time of the adhesion of the insulating resin layer can be further improved.

以下,對所使用的聚合物組成物的構成加以詳述。 Hereinafter, the configuration of the polymer composition to be used will be described in detail.

聚合物組成物中的聚合物的含量並無特別限制,就容易控制所鍵結的聚合物的量、絕緣樹脂層的密接性的經時穩定性進一步提高的方面而言,相對於聚合物組成物總量,較佳為0.01wt%~80wt%,更佳為0.1wt%~50wt%,進而佳為0.5wt%~20wt%。 The content of the polymer in the polymer composition is not particularly limited, and it is easy to control the amount of the bonded polymer and the temporal stability of the adhesion of the insulating resin layer is further improved with respect to the polymer composition. The total amount of the particles is preferably from 0.01% by weight to 80% by weight, more preferably from 0.1% by weight to 50% by weight, even more preferably from 0.5% by weight to 20% by weight.

聚合物組成物中所含的溶劑的種類並無特別限制,例 如可例示上述表面處理液中使用的溶劑等。 The kind of the solvent contained in the polymer composition is not particularly limited, and examples thereof For example, a solvent or the like used in the above surface treatment liquid can be exemplified.

其中,就溶解性優異的方面而言,較佳為醇系溶劑、酮系溶劑(較佳為環己酮)、二醇酯系溶劑(較佳為丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯)、醯胺系溶劑(較佳為N-乙基吡咯烷酮)。 Among them, in terms of excellent solubility, an alcohol solvent, a ketone solvent (preferably cyclohexanone), a glycol ester solvent (preferably propylene glycol monomethyl ether acetate, diethylene glycol) is preferred. Alcohol monoethyl ether acetate, a guanamine solvent (preferably N-ethylpyrrolidone).

再者,聚合物組成物中較佳為實質上不含無機填料。若聚合物組成物中含有無機填料,則無機填料與聚合物一起被積層至經硫醇化合物覆蓋的金屬配線上,聚合物的應力緩和功能下降。結果有時絕緣樹脂層的初期密接性惡化。無機填料例如可列舉氧化鋁(alumina)、氧化鎂(magnesia)、氧化鈣、氧化鈦(titania)、氧化鋯(zirconia)、滑石、二氧化矽(silica)等公知的材料。 Further, the polymer composition preferably contains substantially no inorganic filler. When the polymer composition contains an inorganic filler, the inorganic filler and the polymer are laminated to the metal wiring covered with the thiol compound, and the stress relaxation function of the polymer is lowered. As a result, the initial adhesion of the insulating resin layer may be deteriorated. Examples of the inorganic filler include known materials such as alumina, magnesia, calcium oxide, titania, zirconia, talc, and silica.

再者,所謂實質上不含無機填料,是指聚合物組成物中的無機填料的含量相對於聚合物組成物中的聚合物與無機填料的合計量而為0.9wt%以下。特佳為不含無機填料(0wt%)。 In addition, the term "containing substantially no inorganic filler" means that the content of the inorganic filler in the polymer composition is 0.9% by weight or less based on the total amount of the polymer and the inorganic filler in the polymer composition. Particularly preferred is no inorganic filler (0 wt%).

就生產性及控制聚合物的附著量(鍵結量)的方面而言,聚合物或聚合物組成物與附有金屬配線的絕緣基板的接觸時間較佳為30秒鐘~120分鐘的範圍,更佳為3分鐘~60分鐘的範圍,進而佳為5分鐘~30分鐘的範圍。 The contact time of the polymer or polymer composition with the insulating substrate with the metal wiring is preferably in the range of 30 seconds to 120 minutes in terms of productivity and control of the amount of bonding (bonding amount) of the polymer. It is more preferably in the range of 3 minutes to 60 minutes, and is preferably in the range of 5 minutes to 30 minutes.

[第2清洗步驟] [2nd cleaning step]

該步驟為使用溶劑(第2清洗溶劑)對附有金屬配線的絕緣基板進行清洗,將絕緣基板表面上的聚合物去除的步驟。藉由進行該步驟,可將與金屬配線上的硫醇化合物 鍵結的聚合物以外的聚合物、特別是絕緣基板表面上的聚合物清洗去除。具體而言,如圖1(E)所示,絕緣基板12上的聚合物16被去除,並且金屬配線14上的多餘的聚合物亦被去除,形成鍵結於經硫醇化合物覆蓋的金屬配線的聚合物的層(聚合物層)22。再者,該步驟結束後,亦可於不損及本發明的效果的範圍內於絕緣基板12上殘存聚合物。 This step is a step of cleaning the insulating substrate with the metal wiring using a solvent (second cleaning solvent) to remove the polymer on the surface of the insulating substrate. By performing this step, the thiol compound on the metal wiring can be Polymers other than the bonded polymer, particularly the polymer on the surface of the insulating substrate, are removed by cleaning. Specifically, as shown in FIG. 1(E), the polymer 16 on the insulating substrate 12 is removed, and excess polymer on the metal wiring 14 is also removed to form a metal wiring bonded to the thiol compound. A layer of polymer (polymer layer) 22. Further, after the completion of the step, the polymer may remain on the insulating substrate 12 within a range that does not impair the effects of the present invention.

首先,對該步驟中使用的材料(第2清洗溶劑)加以說明,然後對該步驟的順序加以說明。 First, the material used in this step (second cleaning solvent) will be described, and the order of the steps will be described.

(第2清洗溶劑) (2nd cleaning solvent)

對附有金屬配線的絕緣基板進行清洗的第2清洗步驟中使用的溶劑(第2清洗溶劑)的種類並無特別限定,只要為可將絕緣基板上的聚合物去除的溶劑即可。其中,較佳為溶解聚合物的溶劑。藉由使用該溶劑,可將堆積於絕緣基板上的多餘的聚合物、或金屬配線上的多餘的聚合物等更高效地去除。 The type of the solvent (second cleaning solvent) used in the second cleaning step of cleaning the insulating substrate with the metal wiring is not particularly limited, and may be any solvent that can remove the polymer on the insulating substrate. Among them, a solvent which dissolves the polymer is preferred. By using this solvent, excess polymer deposited on the insulating substrate or excess polymer on the metal wiring can be removed more efficiently.

溶劑的種類只要可將聚合物去除,則並無特別限制,例如可列舉第1清洗步驟中使用的第1清洗溶劑中例示的溶劑等。 The type of the solvent is not particularly limited as long as the polymer can be removed, and examples thereof include a solvent exemplified in the first cleaning solvent used in the first washing step.

其中,就聚合物的去除性的方面而言,較佳為醇系溶劑、酮系溶劑(較佳為環己酮)、二醇酯系溶劑(較佳為丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯)、醯胺系溶劑(較佳為N-乙基吡咯烷酮)或該些溶劑與水的混合溶劑。 Among them, in terms of polymer removability, an alcohol solvent, a ketone solvent (preferably cyclohexanone), a glycol ester solvent (preferably propylene glycol monomethyl ether acetate, and two) are preferred. Ethylene glycol monoethyl ether acetate, a guanamine solvent (preferably N-ethylpyrrolidone) or a mixed solvent of the solvent and water.

所使用的溶劑的沸點(25℃、一大氣壓)並無特別限 制,就安全性的觀點而言,較佳為75℃~200℃,更佳為80℃~180℃。 The boiling point of the solvent used (25 ° C, one atmosphere) is not limited The system is preferably from 75 ° C to 200 ° C, more preferably from 80 ° C to 180 ° C from the viewpoint of safety.

(步驟的順序) (order of steps)

清洗方法並無特別限制,可採用公知的方法。例如可列舉於附有金屬配線的絕緣基板上(特別是金屬配線側的表面上)塗佈第2清洗溶劑的方法、於第2清洗溶劑中浸漬附有金屬配線的絕緣基板的方法等。 The washing method is not particularly limited, and a known method can be employed. For example, a method of applying a second cleaning solvent to an insulating substrate with a metal wiring (particularly, a surface on a metal wiring side), a method of immersing an insulating substrate with a metal wiring in a second cleaning solvent, and the like may be mentioned.

另外,就控制聚合物的附著量(鍵結量)的方面而言,第2清洗溶劑的液溫較佳為5℃~60℃的範圍,更佳為15℃~35℃的範圍。 Further, the liquid temperature of the second cleaning solvent is preferably in the range of 5 ° C to 60 ° C, and more preferably in the range of 15 ° C to 35 ° C, in terms of controlling the amount of bonding (bonding amount) of the polymer.

另外,就生產性及控制聚合物的附著量(鍵結量)的方面而言,附有金屬配線的絕緣基板與第2清洗溶劑的接觸時間較佳為10秒鐘~10分鐘的範圍,更佳為15秒鐘~5分鐘的範圍。 In addition, in terms of productivity and control of the amount of bonding (bonding amount) of the polymer, the contact time between the insulating substrate with the metal wiring and the second cleaning solvent is preferably in the range of 10 seconds to 10 minutes. Good range of 15 seconds to 5 minutes.

藉由實施上述步驟,而於金屬配線上形成硫醇化合物層18與聚合物層22的積層構造(圖1(E))。 By performing the above steps, a laminated structure of the thiol compound layer 18 and the polymer layer 22 is formed on the metal wiring (Fig. 1(E)).

設於硫醇化合物層18上的聚合物層22的厚度並無特別限制,就安裝電子零件時可將該層容易地去除的方面而言,較佳為1μm以下,更佳為0.2μm以下,進而佳為0.1μm以下。再者,下限並無特別限制,就進一步發揮由聚合物層22所得的絕緣樹脂層的密接性的經時穩定性提高的方面而言,較佳為0.005μm以上。 The thickness of the polymer layer 22 provided on the thiol compound layer 18 is not particularly limited, and is preferably 1 μm or less, more preferably 0.2 μm or less, from the viewpoint of easily removing the layer when the electronic component is mounted. Further preferably, it is 0.1 μm or less. In addition, the lower limit is not particularly limited, and it is preferably 0.005 μm or more from the viewpoint of further improving the stability of the adhesiveness of the insulating resin layer obtained from the polymer layer 22 over time.

再者,聚合物層22中較佳為實質上不含無機填料。所謂實質上不含無機填料,是指聚合物層22中的無機填料的 含量相對於聚合物層22總量而為0.9wt%以下。特佳為不含無機填料(0wt%)。 Further, it is preferred that the polymer layer 22 be substantially free of inorganic fillers. The term "substantially free of inorganic filler" means the inorganic filler in the polymer layer 22. The content is 0.9% by weight or less based on the total amount of the polymer layer 22. Particularly preferred is no inorganic filler (0 wt%).

另外,藉由實施上述步驟,絕緣基板上的硫醇化合物及聚合物實質上被去除,後述絕緣樹脂層與絕緣基板可接觸,結果絕緣樹脂層的初期密接性及該步驟結束後的密接性的經時穩定性提高。 Further, by performing the above steps, the thiol compound and the polymer on the insulating substrate are substantially removed, and the insulating resin layer described later can be brought into contact with the insulating substrate, and as a result, the initial adhesion of the insulating resin layer and the adhesion after the end of the step are obtained. The stability over time is improved.

[絕緣樹脂層形成步驟] [Insulating resin layer forming step]

該步驟為於附有金屬配線的絕緣基板的金屬配線側的表面上形成絕緣樹脂層的步驟,該附有金屬配線的絕緣基板具有經上述步驟中所得的聚合物層覆蓋的金屬配線。更具體而言,如圖1(F)所示,將絕緣樹脂層24以與經聚合物層22覆蓋的金屬配線14接觸的方式設置於附有金屬配線的絕緣基板10上,獲得印刷配線基板26。藉由設置絕緣樹脂層24,可確保金屬配線14間的絕緣可靠性。另外,由於絕緣基板12與絕緣樹脂層24可直接接觸,故絕緣樹脂層24的密接性優異。 This step is a step of forming an insulating resin layer on the surface of the metal wiring side of the insulating substrate with the metal wiring, and the insulating substrate with the metal wiring has the metal wiring covered by the polymer layer obtained in the above step. More specifically, as shown in FIG. 1(F), the insulating resin layer 24 is provided on the insulating substrate 10 with the metal wiring so as to be in contact with the metal wiring 14 covered with the polymer layer 22, thereby obtaining a printed wiring substrate. 26. By providing the insulating resin layer 24, insulation reliability between the metal wirings 14 can be ensured. Further, since the insulating substrate 12 and the insulating resin layer 24 can be in direct contact with each other, the insulating resin layer 24 is excellent in adhesion.

首先,對絕緣樹脂層的材料加以說明,繼而對絕緣樹脂層的形成方法加以說明。 First, the material of the insulating resin layer will be described, and then the method of forming the insulating resin layer will be described.

絕緣樹脂層的材料可使用公知的絕緣性的材料。例如可使用被用作所謂的層間絕緣樹脂層的材料,具體可列舉環氧樹脂、芳族聚醯胺樹脂、結晶性聚烯烴樹脂、非晶性聚烯烴樹脂、含氟樹脂(聚四氟乙烯、全氟化聚醯亞胺、全氟化非晶樹脂等)、聚醯亞胺樹脂、聚醚碸樹脂、聚苯硫醚樹脂、聚醚醚酮樹脂、丙烯酸酯樹脂等。層間絕緣樹脂 層例如可列舉味之素精細化學(Ajinomoto Fine-Techno)(股)製造的ABF GX-13、ABF GX-92等。 As the material of the insulating resin layer, a known insulating material can be used. For example, a material used as a so-called interlayer insulating resin layer can be used, and specific examples thereof include an epoxy resin, an aromatic polyamide resin, a crystalline polyolefin resin, an amorphous polyolefin resin, and a fluorine-containing resin (polytetrafluoroethylene). , perfluoropolyimine, perfluorinated amorphous resin, etc.), polyimide resin, polyether oxime resin, polyphenylene sulfide resin, polyetheretherketone resin, acrylate resin, and the like. Interlayer insulating resin Examples of the layer include ABF GX-13 and ABF GX-92 manufactured by Ajinomoto Fine-Techno Co., Ltd.

另外,亦可使用所謂的阻焊劑層作為絕緣樹脂層。阻焊劑亦可使用市售品,具體而言,例如可列舉太陽油墨製造(股)製造的PFR800、PSR4000(商品名)、日立化成工業(股)製造的SR7200G、SR7300G等。 Further, a so-called solder resist layer can also be used as the insulating resin layer. A commercially available product may be used as the solder resist. Specific examples thereof include PFR800, PSR4000 (trade name) manufactured by Sun Ink Manufacturing Co., Ltd., and SR7200G and SR7300G manufactured by Hitachi Chemical Co., Ltd.

進而,亦可使用感光性膜阻劑作為絕緣層。具體可列舉旭化成電子材料(ASAHI KASEI E-materials)(股)製造的SUNFORT、日立化成工業(股)製造的Photek等。 Further, a photosensitive film resist can also be used as the insulating layer. Specific examples include SUNFORT manufactured by ASAHI KASEI E-materials, and Photek manufactured by Hitachi Chemical Co., Ltd.

其中,絕緣樹脂層較佳為含有環氧基或(甲基)丙烯酸酯基的樹脂。該樹脂容易與上述聚合物層鍵結,結果絕緣樹脂層的密接性的經時穩定性進一步提高。 Among them, the insulating resin layer is preferably a resin containing an epoxy group or a (meth) acrylate group. This resin is easily bonded to the above polymer layer, and as a result, the stability with time of the adhesion of the insulating resin layer is further improved.

該樹脂較佳為絕緣樹脂層的主成分。所謂主成分,是指該樹脂的合計量相對於絕緣樹脂層總量而為50wt%以上,較佳為60wt%以上。再者,上限為100wt%。 The resin is preferably a main component of the insulating resin layer. The term "main component" means that the total amount of the resin is 50% by weight or more, preferably 60% by weight or more, based on the total amount of the insulating resin layer. Furthermore, the upper limit is 100% by weight.

具有環氧基的樹脂可使用公知的環氧樹脂。例如可使用縮水甘油醚型環氧樹脂、縮水甘油酯型環氧樹脂、縮水甘油胺型環氧樹脂等。 As the epoxy group-containing resin, a known epoxy resin can be used. For example, a glycidyl ether type epoxy resin, a glycidyl ester type epoxy resin, a glycidylamine type epoxy resin, or the like can be used.

具有(甲基)丙烯酸酯基的樹脂可使用公知的樹脂。例如可使用丙烯酸酯樹脂、甲基丙烯酸酯樹脂等。 As the resin having a (meth) acrylate group, a known resin can be used. For example, an acrylate resin, a methacrylate resin, or the like can be used.

另外,絕緣樹脂層中較佳為含有無機填料。藉由絕緣樹脂層中含有無機填料,絕緣性進一步提高,並且熱膨脹係數(Coefficient of thermal expansion,CTE)下降。再者,無機填料的種類如上述般可使用公知的材料。 Further, it is preferable that the insulating resin layer contains an inorganic filler. By containing an inorganic filler in the insulating resin layer, the insulating property is further improved, and the coefficient of thermal expansion (CTE) is lowered. Further, as the type of the inorganic filler, a known material can be used as described above.

就絕緣性進一步提高的方面而言,絕緣樹脂層中的無機填料的含量相對於絕緣樹脂層總量,較佳為1wt%~85wt%,更佳為15wt%~80wt%,進而佳為40wt%~75wt%。 The content of the inorganic filler in the insulating resin layer is preferably from 1% by weight to 85% by weight, more preferably from 15% by weight to 80% by weight, even more preferably 40% by weight, based on the total amount of the insulating resin layer. ~75wt%.

於附有金屬配線的絕緣基板上形成絕緣樹脂層的形成方法並無特別限制,可採用公知的方法。例如可列舉:將絕緣樹脂層的膜直接層疊於附有金屬配線的絕緣基板上的方法;或將含有構成絕緣樹脂層的成分的絕緣樹脂層形成用組成物塗佈於附有金屬配線的絕緣基板上的方法;或將附有金屬配線的絕緣基板浸漬於該絕緣樹脂層形成用組成物中的方法等。 The method of forming the insulating resin layer on the insulating substrate with the metal wiring is not particularly limited, and a known method can be employed. For example, a method in which a film of an insulating resin layer is directly laminated on an insulating substrate with a metal wiring; or a composition for forming an insulating resin layer containing a component constituting the insulating resin layer is applied to an insulating layer with metal wiring A method on a substrate; or a method of immersing an insulating substrate with a metal wiring in the composition for forming an insulating resin layer.

再者,上述絕緣樹脂層形成用組成物中,視需要亦可含有溶劑。於使用含有溶劑的絕緣樹脂層形成用組成物的情形時,亦可將該組成物配置於基板上後,視需要實施加熱處理以將溶劑去除。 Further, the insulating resin layer-forming composition may contain a solvent as needed. When a composition for forming an insulating resin layer containing a solvent is used, the composition may be placed on a substrate, and then heat-treated as necessary to remove the solvent.

另外,將絕緣樹脂層設於附有金屬配線的絕緣基板上後,視需要亦可對絕緣樹脂層實施能量賦予(例如曝光或加熱處理)。 Further, after the insulating resin layer is provided on the insulating substrate with the metal wiring, the insulating resin layer may be subjected to energy application (for example, exposure or heat treatment).

所形成的絕緣樹脂層的膜厚並無特別限制,就配線間的絕緣可靠性的觀點而言,較佳為5μm~50μm,更佳為15μm~40μm。 The thickness of the insulating resin layer to be formed is not particularly limited, and is preferably 5 μm to 50 μm, and more preferably 15 μm to 40 μm from the viewpoint of insulation reliability between wirings.

於圖1(F)中,絕緣樹脂層24是記載為一層,但亦可為多層構造。 In FIG. 1(F), the insulating resin layer 24 is described as one layer, but may have a multilayer structure.

[乾燥步驟] [Drying step]

該步驟為視需要而設置於上述各步驟之間的步驟,且 為對附有金屬配線的絕緣基板進行加熱乾燥的步驟。若水分殘存於附有金屬配線的絕緣基板上,則金屬離子的遷移受到促進,結果可能損及金屬配線間的絕緣性,因此較佳為藉由設置該步驟而去除水分。再者,該步驟為任意步驟,於上述步驟中使用的溶劑為揮發性優異的溶劑的情形等時,亦可不實施該步驟。 This step is a step disposed between the above steps as needed, and A step of heating and drying an insulating substrate with metal wiring. When moisture remains on the insulating substrate with the metal wiring, the migration of the metal ions is promoted, and as a result, the insulation between the metal wirings may be impaired. Therefore, it is preferable to remove the water by providing this step. In addition, this step is an arbitrary step, and when the solvent used in the above step is a solvent having excellent volatility, the step may not be carried out.

就抑制金屬配線中的金屬的氧化的方面而言,加熱乾燥條件較佳為於70℃~120℃(較佳為80℃~110℃)下實施15秒鐘~10分鐘(較佳為30秒鐘~5分鐘)。若乾燥溫度過低或乾燥時間過短,則有時水分的去除不充分,若乾燥溫度過高或乾燥時間過長,則可能形成金屬的氧化膜。 In terms of suppressing oxidation of the metal in the metal wiring, the heat drying condition is preferably carried out at 70 ° C to 120 ° C (preferably 80 ° C to 110 ° C) for 15 seconds to 10 minutes (preferably 30 seconds). Clock ~ 5 minutes). If the drying temperature is too low or the drying time is too short, the removal of moisture may be insufficient. If the drying temperature is too high or the drying time is too long, an oxide film of a metal may be formed.

乾燥時所使用的裝置並無特別限定,可使用恆溫層、加熱器等公知的加熱裝置。 The apparatus used for drying is not particularly limited, and a known heating device such as a constant temperature layer or a heater can be used.

[印刷配線基板] [Printed wiring board]

藉由經過上述步驟,如圖1(F)所示,可獲得印刷配線基板26,該印刷配線基板26具備附有金屬配線的絕緣基板10以及絕緣樹脂層24,絕緣樹脂層24配置於附有金屬配線的絕緣基板10的金屬配線14側的表面,且於金屬配線14與絕緣樹脂層24之間插入有硫醇化合物層18及聚合物層22。換言之,硫醇化合物及聚合物鍵結於面向絕緣樹脂層24的金屬配線14的表面。所得的印刷配線基板26中,絕緣樹脂層24與附有金屬配線的絕緣基板10的密接性優異。 By the above-described steps, as shown in FIG. 1(F), the printed wiring board 26 is provided, and the printed wiring board 26 includes the insulating substrate 10 with the metal wiring and the insulating resin layer 24, and the insulating resin layer 24 is disposed with the insulating resin layer 24 attached thereto. The thiol compound layer 18 and the polymer layer 22 are interposed between the metal wiring 14 and the insulating resin layer 24 on the surface of the insulating substrate 10 of the metal wiring on the metal wiring 14 side. In other words, the thiol compound and the polymer are bonded to the surface of the metal wiring 14 facing the insulating resin layer 24. In the obtained printed wiring board 26, the insulating resin layer 24 is excellent in adhesion to the insulating substrate 10 to which the metal wiring is attached.

再者,如圖1(F)所示,上文中列舉金屬配線14為 一層的配線構造的印刷配線基板26為例,但當然不限定於此。例如藉由使用交替積層有多層絕緣基板12與金屬配線14的多層配線基板(例如圖2所記載的多層配線基板),可製造多層配線構造的印刷配線基板。 Furthermore, as shown in FIG. 1(F), the metal wiring 14 is listed above. The printed wiring board 26 of the wiring structure of one layer is taken as an example, but it is of course not limited to this. For example, a printed wiring board having a multilayer wiring structure can be manufactured by using a multilayer wiring board (for example, the multilayer wiring board shown in FIG. 2) in which the multilayer insulating substrate 12 and the metal wiring 14 are alternately laminated.

藉由本發明的製造方法所得的印刷配線基板可用於各種用途及構造,例如可列舉母板用基板、半導體封裝用基板、積體電路(Integrated Circuit,IC)封裝基板、大規模積體電路(Large Scale Integration,LSI)封裝基板、鑄模連接元件(Molded Interconnect Device,MID)基板等。本發明的製造方法可應用於剛性基板、柔性基板、柔剛結合基板、成型電路基板等。 The printed wiring board obtained by the manufacturing method of the present invention can be used for various applications and structures, and examples thereof include a mother board substrate, a semiconductor package board, an integrated circuit (IC) package board, and a large-scale integrated circuit (Large). Scale Integration, LSI) package substrate, Molded Interconnect Device (MID) substrate, and the like. The manufacturing method of the present invention can be applied to a rigid substrate, a flexible substrate, a flexible bonded substrate, a molded circuit substrate, and the like.

另外,亦可將所得的印刷配線基板中的絕緣樹脂層局部去除,安裝半導體晶片,用作印刷電路板。 Further, the insulating resin layer in the obtained printed wiring board may be partially removed, and a semiconductor wafer may be mounted and used as a printed circuit board.

例如,於使用阻焊劑作為絕緣樹脂層的情形時,將預定的圖案狀的遮罩配置於絕緣樹脂層上,賦予能量而使絕緣樹脂層硬化,將未賦予能量的區域的絕緣樹脂層去除而使配線露出。繼而,利用公知的方法對所露出的配線的表面進行清洗(例如使用硫酸、軟蝕刻劑、鹼、界面活性劑進行清洗)後,將半導體晶片安裝於配線表面上。 For example, when a solder resist is used as the insulating resin layer, a predetermined pattern-shaped mask is placed on the insulating resin layer, energy is applied to cure the insulating resin layer, and the insulating resin layer in the region where no energy is applied is removed. The wiring is exposed. Then, the surface of the exposed wiring is cleaned (for example, by using sulfuric acid, a soft etchant, an alkali, or a surfactant) by a known method, and then the semiconductor wafer is mounted on the wiring surface.

於使用公知的層間絕緣樹脂層作為絕緣樹脂層的情形時,可藉由鑽孔加工或雷射加工來去除絕緣樹脂層。 In the case where a known interlayer insulating resin layer is used as the insulating resin layer, the insulating resin layer can be removed by drilling or laser processing.

另外,亦可於所得的印刷配線基板的絕緣樹脂層上進一步設置金屬配線(配線圖案)。形成金屬配線的方法並無特別限制,可使用公知的方法(鍍敷處理、濺鍍處理等)。 Further, a metal wiring (wiring pattern) may be further provided on the insulating resin layer of the obtained printed wiring board. The method of forming the metal wiring is not particularly limited, and a known method (plating treatment, sputtering treatment, or the like) can be used.

於本發明中,可使用在所得的印刷配線基板的絕緣樹脂層上進一步設有金屬配線(配線圖案)的基板作為新的附有金屬配線的絕緣基板(內層基板),亦可新積層若干層的絕緣樹脂層及金屬配線。 In the present invention, a substrate in which a metal wiring (wiring pattern) is further provided on the insulating resin layer of the obtained printed wiring board can be used as a new insulating substrate (inner substrate) with metal wiring, or a new layer can be used. A layer of insulating resin and metal wiring.

[實例] [Example]

以下,藉由實例對本發明進行更詳細說明,但本發明不限定於該些實例。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to the examples.

<實例1> <Example 1>

使用覆銅積層板(日立化成公司製造,MCL-E-679F,基板:玻璃環氧基板),利用半加成法形成具備L/S=1000μm/500μm的銅配線的附有金屬配線的絕緣基板A。附有金屬配線的絕緣基板A是藉由以下方法製作。 Using a copper clad laminate (manufactured by Hitachi Chemical Co., Ltd., MCL-E-679F, substrate: glass epoxy substrate), a metal wiring-attached insulating substrate having copper wiring of L/S = 1000 μm / 500 μm was formed by a semi-additive method. A. The insulating substrate A with the metal wiring is produced by the following method.

對覆銅積層板進行酸清洗、水洗、乾燥後,藉由真空層疊機於0.2MPa的壓力、70℃的條件下層疊乾膜阻劑(DFR,商品名:RY3315,日立化成工業股份有限公司製造)。層疊後,利用中心波長為365nm的曝光機,於70mJ/cm2的條件下對銅圖案形成部進行遮罩曝光。其後,以1%碳酸氫鈉水溶液進行顯影,進行水洗,獲得鍍敷阻劑圖案。 After the copper-clad laminate is subjected to acid cleaning, water washing, and drying, a dry film resist (DFR, trade name: RY3315, manufactured by Hitachi Chemical Co., Ltd.) is laminated by a vacuum laminator under the pressure of 0.2 MPa and 70 °C. ). After lamination, the copper pattern forming portion was mask exposed at 70 mJ/cm 2 using an exposure machine having a center wavelength of 365 nm. Thereafter, development was carried out with a 1% aqueous sodium hydrogencarbonate solution, followed by washing with water to obtain a plating resist pattern.

經過鍍敷前處理、水洗,於在阻劑圖案間露出的銅上實施電鍍。此時,電解液是使用硫酸銅(II)的硫酸酸性溶液,將純度為99%左右的粗銅的板作為陽極,將覆銅積層板作為陰極。於50℃~60℃以0.2V~0.5V進行電解,藉此於陰極的銅上析出銅。其後,進行水洗、乾燥。 The plating is performed on the copper exposed between the resist patterns by pre-plating treatment and water washing. At this time, the electrolytic solution was an acidic sulfuric acid solution using copper (II) sulfate, a plate of crude copper having a purity of about 99% was used as an anode, and a copper-clad laminate was used as a cathode. Electrolysis was carried out at 50 ° C to 60 ° C at 0.2 V to 0.5 V to precipitate copper on the copper of the cathode. Thereafter, it is washed with water and dried.

為了剝離阻劑圖案,將基板於45℃的4%NaOH水溶液中浸漬60秒鐘。其後,對所得的基板進行水洗,於1%硫酸中浸漬30秒鐘。然後,再次水洗。藉由以過氧化氫、硫酸為主成分的蝕刻液,對銅圖案間的經導通的銅進行快速蝕刻,進行水洗、乾燥。所得的銅配線基板(附有金屬配線的絕緣基板A)的銅配線的厚度為15μm,銅配線的表面粗糙度Rz為Rz=0.4μm。 In order to peel off the resist pattern, the substrate was immersed in a 4% NaOH aqueous solution at 45 ° C for 60 seconds. Thereafter, the obtained substrate was washed with water and immersed in 1% sulfuric acid for 30 seconds. Then, wash again. The conductive copper between the copper patterns is quickly etched by an etching solution containing hydrogen peroxide and sulfuric acid as a main component, and washed with water and dried. The thickness of the copper wiring of the obtained copper wiring board (insulating board A with metal wiring) was 15 μm, and the surface roughness Rz of the copper wiring was Rz=0.4 μm.

繼而,將所得的附有金屬配線的絕緣基板A於含有1,10-癸二硫醇(1,10-decanedithiol,和光純藥公司製造)的乙醇溶液(硫醇化合物濃度:0.1mM)中浸漬60分鐘,然後以乙醇進行清洗(第1配線處理)。再者,1,10-癸二硫醇的反應性官能基X當量(g/eq)為103,分子量為206,硫原子含量為31wt%。 Then, the obtained insulating substrate A with metal wiring was impregnated in an ethanol solution (thiol compound concentration: 0.1 mM) containing 1,10-decanedithiol (manufactured by Wako Pure Chemical Industries, Ltd.). After 60 minutes, it was washed with ethanol (first wiring treatment). Further, the reactive functional group X equivalent (g/eq) of 1,10-decanedithiol was 103, the molecular weight was 206, and the sulfur atom content was 31% by weight.

繼而,將實施了上述處理的附有金屬配線的絕緣基板A於室溫下於含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:335,反應性官能基Y當量:143,數量平均分子量:48000)的環己酮溶液(聚合物濃度:5wt%)中浸漬10分鐘。其後,以環己酮對附有金屬配線的絕緣基板A進行清洗,於室溫下使其乾燥(第2配線處理)。 Then, the metal substrate-attached insulating substrate A subjected to the above treatment was subjected to polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 335, reactive functional group) at room temperature. Y equivalent: 143, a number average molecular weight: 48,000) of a cyclohexanone solution (polymer concentration: 5 wt%) was immersed for 10 minutes. Thereafter, the insulating substrate A with the metal wiring attached thereto was washed with cyclohexanone, and dried at room temperature (second wiring treatment).

其後,於附有金屬配線的絕緣基板A的金屬配線側的表面層疊絕緣樹脂層(味之素精細化學公司製造,GX-13)。繼而,藉由雷射加工,製作絕緣樹脂層的圖案(L字圖案)(絕緣樹脂層的層厚:35μm),進而藉由除渣處 理將由於雷射加工而生成的殘渣去除。再者,上述絕緣樹脂層中含有無機填料(二氧化矽)。 Thereafter, an insulating resin layer (GX-13, manufactured by Ajinomoto Fine Chemical Co., Ltd.) was laminated on the surface of the metal wiring side of the insulating substrate A to which the metal wiring was attached. Then, by laser processing, a pattern (L-shaped pattern) of the insulating resin layer (layer thickness of the insulating resin layer: 35 μm) is formed, and further, by the slag removing place The residue generated by laser processing is removed. Further, the insulating resin layer contains an inorganic filler (cerium oxide).

藉由以上操作,製作出於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A(以下將該基板稱為基板B)。再者,基板B中,於不存在絕緣樹脂層的圖案的部分中,銅局部露出。對所得的基板B按照以下順序進行膠帶剝離試驗。 By the above operation, the insulating substrate A with the metal wiring provided with the pattern of the insulating resin layer on the surface (hereinafter referred to as the substrate B) is produced. Further, in the substrate B, copper is partially exposed in a portion where the pattern of the insulating resin layer is not present. The obtained substrate B was subjected to a tape peeling test in the following order.

(鍍Ni) (Ni plating)

對所得的基板B使用清潔液(商品名:ACL-009,上村工業公司製造)於液溫50℃下實施5分鐘清洗處理。進而,於將10%硫酸(和光純藥工業)與過氧化二硫化鈉(和光純藥工業)混合而成的軟蝕刻液中,於室溫下將基板B浸漬1.5分鐘進行清洗。進而,將實施了處理的基板B於2%硫酸(和光純藥工業)中浸漬1分鐘,於將10%硫酸與MFD-5(上村工業公司製造)混合稀釋而成的活化液中浸漬1分鐘。然後,於NPR-4(上村工業公司製造)的鍍Ni液中於80℃下浸漬16分鐘,藉此以Ni(鎳)鍍敷銅表面(鍍鎳厚:3μm)。 The obtained substrate B was subjected to a cleaning treatment at a liquid temperature of 50 ° C for 5 minutes using a cleaning liquid (trade name: ACL-009, manufactured by Uemura Industrial Co., Ltd.). Further, in a soft etching solution obtained by mixing 10% sulfuric acid (Wako Pure Chemical Industries, Ltd.) with sodium persulfide (Wako Pure Chemical Industries, Ltd.), the substrate B was immersed for 1.5 minutes at room temperature for cleaning. Furthermore, the substrate B subjected to the treatment was immersed in 2% sulfuric acid (Wako Pure Chemical Industries, Ltd.) for 1 minute, and immersed in an activation solution obtained by mixing and diluting 10% sulfuric acid and MFD-5 (manufactured by Uemura Kogyo Co., Ltd.) for 1 minute. . Then, it was immersed in a Ni-plated liquid of NPR-4 (manufactured by Uemura Kogyo Co., Ltd.) at 80 ° C for 16 minutes to thereby plate a copper surface (nickel plating thickness: 3 μm) with Ni (nickel).

(膠帶剝離試驗) (tape peeling test)

作為評價方法,於上述鍍Ni後進行膠帶剝離試驗,對絕緣樹脂層圖案未剝離而殘留於附有金屬配線的絕緣基板A上的網格的個數進行計數。將實例1中獲得的銅配線基板的結果示於表1中。再者,膠帶剝離試驗是依照JIS K5600-5-6來實施。表1中於「初期密接性」一欄中示出 結果。 As a method of evaluation, a tape peeling test was performed after the above-described Ni plating, and the number of meshes remaining on the insulating substrate A with the metal wiring not peeled off from the insulating resin layer pattern was counted. The results of the copper wiring substrate obtained in Example 1 are shown in Table 1. Further, the tape peeling test was carried out in accordance with JIS K5600-5-6. Table 1 shows the column of "Initial Adhesion" result.

再者,按照以下基準對所得的結果進行評價。於實用方面,理想的是不為「C」。 Furthermore, the results obtained were evaluated according to the following criteria. In practical terms, the ideal is not "C".

「A」:100格中,90格以上殘留的情形 "A": In the case of 100 cells, more than 90 cells remain.

「B」:100格中,60格以上、小於90格殘留的情形 "B": In the case of 100 cells, more than 60 cells and less than 90 cells remain.

「C」:100格中,小於60格殘留的情形 "C": in the case of 100 cells, less than 60 cells remain

(經時密接試驗) (time-series test)

繼而,將完成了膠帶剝離試驗的樣品於濕度85%、溫度130度、壓力1.2atm的環境下(使用裝置:espec公司製造,EHS-221MD)放置200小時。200小時後,取出樣品,再次實施上述膠帶剝離試驗並進行經時性密接試驗。表1中於「經時穩定性」一欄中示出結果。 Then, the sample which completed the tape peeling test was placed in an environment of a humidity of 85%, a temperature of 130 degrees, and a pressure of 1.2 atm (using a device: manufactured by Espec Corporation, EHS-221MD) for 200 hours. After 200 hours, the sample was taken out, and the tape peeling test described above was again carried out and subjected to a time-sensitive adhesion test. The results are shown in Table 1 in the column "Performance Stability".

然後,求出所得的網格的殘存格數與高溫高濕處理前實施的上述剝離試驗中的網格的殘存格數之比(高溫高濕環境下放置後的剝離試驗中的殘存格數/高溫高濕環境下放置前的剝離試驗中的殘存格數),按照以下基準進行評價。於實用方面,理想的是不為「C」。 Then, the ratio of the number of remaining cells of the obtained mesh to the number of remaining cells of the mesh in the peeling test performed before the high-temperature and high-humidity treatment was determined (the number of remaining cells in the peeling test after standing in a high-temperature and high-humidity environment/ The number of remaining cells in the peeling test before leaving in a high-temperature and high-humidity environment was evaluated according to the following criteria. In practical terms, the ideal is not "C".

「A」:比為0.9以上的情形 "A": The ratio is above 0.9

「B」:比為0.7以上、小於0.9的情形 "B": the ratio is 0.7 or more and less than 0.9

「C」:比小於0.7的情形 "C": a ratio less than 0.7

<實例2> <Example 2>

代替實例1中實施的第1配線處理,而將附有金屬配線的絕緣基板A於含有季戊四醇四(3-巰基乙酸酯)(Pentaerythritol tetrakis(3-mercaptoacetate))的乙醇溶液 (硫醇化合物濃度:1mM)中浸漬10分鐘,並以乙醇進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 Instead of the first wiring treatment carried out in Example 1, the insulating substrate A with the metal wiring was attached to an ethanol solution containing Pentaerythritol tetrakis (3-mercaptoacetate). In the same procedure as in Example 1, an insulating substrate A with metal wiring provided with an insulating resin layer pattern on the surface was prepared in the same manner as in Example 1 except that the mixture was immersed for 10 minutes in a thiol compound concentration: 1 mM. And carry out various evaluations. The results are summarized in Table 1.

再者,季戊四醇四(3-巰基乙酸酯)的反應性官能基X當量(g/eq)為122,分子量為488,硫原子含量為26wt%。 Further, pentaerythritol tetrakis(3-mercaptoacetate) had a reactive functional group X equivalent (g/eq) of 122, a molecular weight of 488, and a sulfur atom content of 26% by weight.

<實例3> <Example 3>

代替實例1中實施的第1配線處理,而將附有金屬配線的絕緣基板A於含有二季戊四醇六(3-巰基丙酸酯)的乙醇溶液(硫醇化合物濃度:1mM)中浸漬10分鐘,並以乙醇進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 The insulating substrate A with the metal wiring was immersed in an ethanol solution (thiol compound concentration: 1 mM) containing dipentaerythritol hexakis(3-mercaptopropionate) for 10 minutes instead of the first wiring treatment carried out in Example 1. In the same procedure as in Example 1, an insulating substrate A with metal wiring provided with an insulating resin layer pattern on the surface thereof was prepared and subjected to various evaluations. The results are summarized in Table 1.

再者,二季戊四醇六(3-巰基丙酸酯)的反應性官能基X當量(g/eq)為131,分子量為783,硫原子含量為24wt%。 Further, dipentaerythritol hexakis(3-mercaptopropionate) had a reactive functional group X equivalent (g/eq) of 131, a molecular weight of 783, and a sulfur atom content of 24% by weight.

<實例4> <Example 4>

代替實例1中實施的第1配線處理,而將附有金屬配線的絕緣基板A於含有四-(7-巰基-2,5-二硫雜庚基)甲烷的環己酮溶液(硫醇化合物濃度:0.1mM)中浸漬20分鐘,以環己酮進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 Instead of the first wiring treatment carried out in Example 1, the insulating substrate A with metal wiring attached to a cyclohexanone solution containing tetrakis-(7-fluorenyl-2,5-dithiaheptyl)methane (thiol compound) In the same procedure as in Example 1, an insulating substrate A with metal wiring provided with a pattern of an insulating resin layer on the surface was prepared and immersed in the same manner as in Example 1 except that the mixture was immersed for 20 minutes in a concentration of 0.1 mM). Various evaluations. The results are summarized in Table 1.

再者,四-(7-巰基-2,5-二硫雜庚基)甲烷的反應性官能基X當量(g/eq)為170,分子量為681,硫原子含量為 56wt%。 Further, tetra-(7-fluorenyl-2,5-dithiaheptyl)methane has a reactive functional group X equivalent (g/eq) of 170, a molecular weight of 681, and a sulfur atom content of 56wt%.

<比較例1> <Comparative Example 1>

代替實例1中實施的第1配線處理及第2配線處理,而於預先將含有四-(7-巰基-2,5-二硫雜庚基)甲烷的環己酮溶液(硫醇化合物濃度:0.1mM)與含有聚甲基丙烯酸縮水甘油酯的環己酮溶液(聚合物濃度:5wt%)混合5小時所得的混合溶液中,將附有金屬配線的絕緣基板A浸漬20分鐘,其後以環己酮對附有金屬配線的絕緣基板A進行清洗,於室溫下使其乾燥,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 Instead of the first wiring treatment and the second wiring treatment performed in Example 1, a cyclohexanone solution containing tetrakis-(7-fluorenyl-2,5-dithiaheptyl)methane was previously added (thiol compound concentration: 0.1 mM) In a mixed solution obtained by mixing a cyclohexanone solution (polymer concentration: 5 wt%) containing polyglycidyl methacrylate for 5 hours, the insulating substrate A with the metal wiring was immersed for 20 minutes, and thereafter In the same procedure as in Example 1, except that the insulating substrate A with the metal wiring was washed with cyclohexanone, the metal wiring with the pattern of the insulating resin layer on the surface was prepared. The substrate A was insulated and subjected to various evaluations. The results are summarized in Table 1.

<比較例2> <Comparative Example 2>

代替實例1的第2配線處理,而將實施了第1配線處理的附有金屬配線的絕緣基板於含有2-(3,4-環氧環己基)乙基三甲氧基矽烷(Azmax公司製造)的乙醇溶液(化合物濃度:10mM)中浸漬5分鐘,並以乙醇進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 In place of the second wiring treatment of Example 1, the insulating substrate with metal wiring subjected to the first wiring treatment was contained in 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane (manufactured by Azmax Corporation). Insulating substrate A with metal wiring provided with an insulating resin layer pattern on the surface was prepared in the same order as in Example 1 except that the ethanol solution (the compound concentration: 10 mM) was immersed for 5 minutes and washed with ethanol. And conduct various evaluations. The results are summarized in Table 1.

再者,於比較例2中,不使用具有至少3個以上的與反應性官能基X反應的反應性官能基Y的聚合物。 Further, in Comparative Example 2, a polymer having at least three or more reactive functional groups Y reactive with the reactive functional group X was not used.

<比較例3> <Comparative Example 3>

代替實例2的第2配線處理,而將實施了第1配線處理的附有金屬配線的絕緣基板於含有2-(3,4-環氧環己基) 乙基三甲氧基矽烷(Azmax公司製造)的乙醇溶液(化合物濃度:10mM)中浸漬5分鐘,並以乙醇進行清洗,除此以外,按照與實例2相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 In place of the second wiring treatment of the example 2, the insulating substrate with the metal wiring subjected to the first wiring treatment contains 2-(3,4-epoxycyclohexyl). An epoxy resin was prepared by immersing in an ethanol solution (compound concentration: 10 mM) of ethyltrimethoxydecane (manufactured by Azmax Co., Ltd.) for 5 minutes and washing with ethanol, except that in the same procedure as in Example 2, an insulating resin was formed on the surface. The insulating substrate A with the metal wiring attached to the layer pattern was subjected to various evaluations. The results are summarized in Table 1.

再者,於比較例3中,不使用具有至少3個以上的與反應性官能基X反應的反應性官能基Y的聚合物。 Further, in Comparative Example 3, a polymer having at least three or more reactive functional groups Y reactive with the reactive functional group X was not used.

<比較例4> <Comparative Example 4>

代替實例1的第1配線處理,而將附有金屬配線的絕緣基板A於含有3-巰基丙基三甲氧基矽烷的乙醇溶液(化合物濃度:10mM)中浸漬5分鐘,並以乙醇進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 In place of the first wiring treatment of Example 1, the insulating substrate A with the metal wiring was immersed in an ethanol solution (compound concentration: 10 mM) containing 3-mercaptopropyltrimethoxydecane for 5 minutes, and washed with ethanol. In the same manner as in Example 1, an insulating substrate A with a metal wiring provided with an insulating resin layer pattern on its surface was prepared and subjected to various evaluations. The results are summarized in Table 1.

再者,於比較例4中,不使用預定的硫醇化合物。 Further, in Comparative Example 4, a predetermined thiol compound was not used.

<比較例5> <Comparative Example 5>

代替實例1的第1配線處理,而將附有金屬配線的絕緣基板A於含有三嗪硫醇的乙醇溶液(化合物濃度:0.1mM)中浸漬60分鐘,並以乙醇進行清洗,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 In place of the first wiring treatment of Example 1, the insulating substrate A with the metal wiring was immersed in an ethanol solution (compound concentration: 0.1 mM) containing triazine thiol for 60 minutes, and washed with ethanol. In the same procedure as in Example 1, an insulating substrate A with a metal wiring provided with an insulating resin layer pattern on its surface was prepared and subjected to various evaluations. The results are summarized in Table 1.

再者,於比較例5中,不使用預定的硫醇化合物。 Further, in Comparative Example 5, a predetermined thiol compound was not used.

<比較例6> <Comparative Example 6>

不實施實例1的第2配線處理,除此以外,按照與實例1相同的順序,製作於表面設有絕緣樹脂層圖案的附有金屬配線的絕緣基板A,並進行各種評價。將結果匯總示於表1中。 In the same manner as in the example 1, the insulating substrate A with the metal wiring provided with the insulating resin layer pattern on the surface was prepared in the same manner as in the example 1, and various evaluations were performed. The results are summarized in Table 1.

再者,對進行了上述實例1~實例4中實施的第2配線處理後的銅配線基板進行X射線光電子光譜(X-ray Photoelectron Spectroscopy,XPS)測定,結果於銅配線上確認到存在硫原子,確認到硫醇化合物鍵結於銅配線上。 Further, X-ray photoelectron spectroscopy (XPS) measurement was performed on the copper wiring board subjected to the second wiring treatment performed in the above-described Examples 1 to 4, and it was confirmed that a sulfur atom was present on the copper wiring. It was confirmed that the thiol compound was bonded to the copper wiring.

根據上述XPS測定結果,實例1~實例4中形成於銅配線上的硫醇化合物的層的厚度均為0.1nm~2nm左右。另外,根據原子力顯微鏡(Atomic Force Microscope,AFM)測定結果,所形成的環氧樹脂層的厚度為10nm~100nm左右。 According to the results of the XPS measurement described above, the thickness of the layer of the thiol compound formed on the copper wiring in Examples 1 to 4 was about 0.1 nm to 2 nm. Further, the thickness of the formed epoxy resin layer was about 10 nm to 100 nm as measured by an Atomic Force Microscope (AFM) measurement.

再者,表1中,「第1配線處理」一欄及「第2配線處理」一欄的「有」是指實施了處理,「-」是指未實施。 In addition, in Table 1, "Yes" in the column of "1st wiring processing" and "2nd wiring processing" means that processing is performed, and "-" means that it is not implemented.

如表1所示,藉由本發明的製造方法所得的印刷配線基板表現出優異的初期密接性及密接性的經時穩定性。 As shown in Table 1, the printed wiring board obtained by the production method of the present invention exhibits excellent initial adhesion and stability with time.

特別是由實例1與實例2(或者實例3或實例4)的比較而確認到,於使用反應性官能基X的個數為4個以上、且具有式(1)所表示的官能基作為該反應性官能基X的化合物的情形時,表現出更優異的初期密接性。 In particular, it was confirmed by comparison of Example 1 and Example 2 (or Example 3 or Example 4) that the number of reactive functional groups X used was four or more and the functional group represented by the formula (1) was used as the In the case of the compound of the reactive functional group X, it exhibits more excellent initial adhesion.

進而,由實例2與實例4的比較確認到,硫醇化合物中的硫原子的含量越多,密接性的經時穩定性更優異。 Further, from the comparison between Example 2 and Example 4, it was confirmed that the more the content of the sulfur atom in the thiol compound, the more excellent the stability with time of adhesion.

另一方面,於將硫醇化合物與聚合物混合而使用的比較例1中,初期密接性差。可推測其原因在於,於混合液中硫醇化合物與聚合物反應,導致與金屬配線的反應性下降。 On the other hand, in Comparative Example 1 in which a thiol compound was mixed with a polymer, initial adhesion was inferior. It is presumed that the reason is that the thiol compound reacts with the polymer in the mixed solution, resulting in a decrease in reactivity with the metal wiring.

另外,於不使用預定的聚合物的比較例2及比較例3中,密接性的經時穩定性差。可推測其原因在於,由利用矽烷偶合劑而形成的網狀結構導致水分吸附於金屬配線,而促進金屬配線的腐蝕。 Further, in Comparative Example 2 and Comparative Example 3 in which a predetermined polymer was not used, the stability with time of adhesion was poor. It is presumed that the reason is that the network structure formed by using the decane coupling agent causes moisture to adsorb to the metal wiring and promotes corrosion of the metal wiring.

進而,於使用專利文獻2所記載的三嗪硫醇、專利文獻1所記載的巰基丙基三甲氧基矽烷的比較例4及比較例5中,密接性的經時穩定性差。特別是於比較例4中,可推測其原因在於,由利用矽烷偶合劑而形成的網狀結構導致水分吸附於金屬配線,而促進金屬配線的腐蝕。 Further, in Comparative Example 4 and Comparative Example 5 in which triazine thiol described in Patent Document 2 and decyl propyl trimethoxy decane described in Patent Document 1 were used, the stability with time of adhesion was poor. In particular, in Comparative Example 4, it is presumed that the mesh structure formed by the decane coupling agent causes moisture to adsorb to the metal wiring and promotes corrosion of the metal wiring.

進而,於未形成聚合物層的比較例6中,初期密接性差。 Further, in Comparative Example 6 in which the polymer layer was not formed, the initial adhesion was inferior.

<實例5> <Example 5>

於實例2中,使用含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:52,反應性官能基Y當量:143,數量平均分子量:7500)的環己酮溶液(聚合物濃度:2.5wt%)代替含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:335,反應性官能基Y當量:143,數量平均分子量:48000)的環己酮溶液(聚合物濃度:5wt%),且層疊太陽油墨公司製造的PFR-800代替味之素精細化學(股)製造的ABF GX-13作為絕緣層,其後透過圖案遮罩(L字圖案)進行曝光,顯影後進行烘烤,進而進行曝光,於銅配線基板上(絕緣層的膜厚:30μm)製作SR(阻焊劑)圖案。對所得的附有SR圖案的銅配線基板進行鍍Ni後,進行上述膠帶剝離試驗。其後,進行經時密接試驗。將結果匯總示於表2中。再者,上述SR中含有無機填料(二氧化矽)。 In Example 2, cyclohexanone containing polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 52, reactive functional group Y equivalent: 143, number average molecular weight: 7500) was used. Solution (polymer concentration: 2.5 wt%) instead of polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 335, reactive functional group Y equivalent: 143, number average molecular weight: 48,000) a cyclohexanone solution (polymer concentration: 5 wt%), and PFR-800 manufactured by Laminated Sun Ink Co., Ltd. replaced ABF GX-13 manufactured by Ajinomoto Fine Chemical Co., Ltd. as an insulating layer, and then passed through a pattern mask. (L-shaped pattern) was exposed, developed, baked, and further exposed, and an SR (solder resist) pattern was formed on a copper wiring board (film thickness of insulating layer: 30 μm). After the obtained copper wiring board with the SR pattern obtained was subjected to Ni plating, the tape peeling test was performed. Thereafter, a time-lapse adhesion test was performed. The results are summarized in Table 2. Further, the SR contains an inorganic filler (cerium oxide).

<實例6> <Example 6>

於實例5中,使用含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:122,反應性官能基Y當量:143,數量平均分子量:17500)的環己酮溶液(聚合物濃度:2.5wt%)代替含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:52,反應性官能基Y當量:143,數量平均分子量:7500)的環己酮溶液(聚合物濃度:2.5wt%),除此以外,按照與實例5相同的順序製作附有SR圖案的 銅配線基板,並進行各種評價。將結果匯總示於表2中。 In Example 5, cyclohexanone containing polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 122, reactive functional group Y equivalent: 143, number average molecular weight: 17500) was used. Solution (polymer concentration: 2.5 wt%) instead of polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 52, reactive functional group Y equivalent: 143, number average molecular weight: 7500) A cyclohexanone solution (polymer concentration: 2.5 wt%) was prepared, except that the SR pattern was attached in the same order as in Example 5. A copper wiring board was subjected to various evaluations. The results are summarized in Table 2.

<實例7> <Example 7>

於實例5中,使用含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:251,反應性官能基Y當量:143,數量平均分子量:36000)的環己酮溶液(聚合物濃度:5wt%)代替含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:52,反應性官能基Y當量:143,數量平均分子量:7500)的環己酮溶液(聚合物濃度:2.5wt%),除此以外,按照與實例5相同的順序製作附有SR圖案的銅配線基板,並進行各種評價。將結果匯總示於表2中。 In Example 5, cyclohexanone containing polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 251, reactive functional group Y equivalent: 143, number average molecular weight: 36,000) was used. Solution (polymer concentration: 5 wt%) instead of polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 52, reactive functional group Y equivalent: 143, number average molecular weight: 7500) A copper wiring board with an SR pattern was prepared in the same procedure as in Example 5 except that the cyclohexanone solution (polymer concentration: 2.5 wt%) was used, and various evaluations were performed. The results are summarized in Table 2.

<比較例7> <Comparative Example 7>

於實例5中,使用含有三羥甲基丙烷三縮水甘油醚(Aldrich公司製造,反應性官能基Y的個數:3,反應性官能基Y當量:100,數量平均分子量:302)的環己酮溶液(化合物濃度:2.5wt%)代替含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:52,反應性官能基Y當量:143,數量平均分子量:7500)的環己酮溶液(聚合物濃度:2.5wt%),除此以外,按照與實例5相同的順序製作附有SR圖案的銅配線基板,並進行各種評價。將結果匯總示於表2中。 In Example 5, a cyclohexane containing trimethylolpropane triglycidyl ether (manufactured by Aldrich, number of reactive functional groups Y: 3, reactive functional group Y equivalent: 100, number average molecular weight: 302) was used. Ketone solution (compound concentration: 2.5 wt%) instead of polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 52, reactive functional group Y equivalent: 143, number average molecular weight: 7500) A copper wiring board with an SR pattern was prepared in the same procedure as in Example 5 except that the cyclohexanone solution (polymer concentration: 2.5 wt%) was used, and various evaluations were performed. The results are summarized in Table 2.

再者,表2中的「數量平均分子量」是指第2配線處理中使用的聚合物的數量平均分子量。於比較例7中,表示所使用的三羥甲基丙烷三縮水甘油醚的分子量。 In addition, the "number average molecular weight" in Table 2 means the number average molecular weight of the polymer used for the 2nd wiring process. In Comparative Example 7, the molecular weight of the trimethylolpropane triglycidyl ether used was shown.

如表2所示,藉由本發明的製造方法而獲得的印刷配線基板表現出優異的初期密接性及密接性的經時穩定性。 As shown in Table 2, the printed wiring board obtained by the production method of the present invention exhibits excellent initial adhesion and stability with time.

特別是於所使用的聚合物的數量平均分子量大的實例6及實例7中,確認到經時穩定性更優異。可推測其原因在於,由於聚合物的數量平均分子量增大,應力緩和能力提高。 In particular, in Examples 6 and 7 in which the number average molecular weight of the polymer to be used was large, it was confirmed that the stability with time was more excellent. It is presumed that the reason is that the stress relaxation ability is improved due to an increase in the number average molecular weight of the polymer.

另一方面,於不實施使用聚合物的第2配線處理的比較例7中,經時穩定性差。 On the other hand, in Comparative Example 7 in which the second wiring treatment using the polymer was not carried out, the stability with time was poor.

<實例8> <Example 8>

於矽基板上蒸鍍銀,形成具備L/S=1000μm/100μm的銀配線的銀配線基板。所得的銀配線基板的銀配線的厚度為0.3μm,銀配線的表面粗糙度Rz為Rz=0.02μm。 Silver was deposited on the tantalum substrate to form a silver wiring board having silver wiring of L/S = 1000 μm/100 μm. The thickness of the silver wiring of the obtained silver wiring board was 0.3 μm, and the surface roughness Rz of the silver wiring was Rz=0.02 μm.

繼而,將所得的銀配線基板於含有0.1mM的四-(7-巰基-2,5-二硫雜庚基)甲烷的環己酮溶液中浸漬20分鐘,其後,使用環己酮作為清洗溶劑對銀配線基板進行清洗,進而以水進行清洗後,於室溫下使基板乾燥。實施上述處理後,於含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:335,反應性官能基Y當量:143,數量平均分子量:48000)的環己酮溶液(聚合物濃度:5wt%)中於室溫下浸漬10分鐘,以環己酮進 行清洗,於室溫下使基板乾燥。 Then, the obtained silver wiring substrate was immersed in a cyclohexanone solution containing 0.1 mM of tetrakis-(7-fluorenyl-2,5-dithiaheptyl)methane for 20 minutes, after which, cyclohexanone was used for washing. The silver wiring substrate was washed with a solvent, and after washing with water, the substrate was dried at room temperature. After the above treatment, cyclohexanone containing polyglycidyl methacrylate (manufactured by Polymer Source, number of reactive functional groups Y: 335, reactive functional group Y equivalent: 143, number average molecular weight: 48,000) The solution (polymer concentration: 5 wt%) was immersed at room temperature for 10 minutes to form cyclohexanone The cells were cleaned and the substrate was dried at room temperature.

其後,於經處理的銀配線基板上層疊絕緣層(太陽油墨公司製造的PFR-800),然後透過圖案遮罩(L字圖案)進行曝光,顯影後進行烘烤,進而進行曝光,於銀配線基板上(SR的膜厚:30μm)製作SR(阻焊劑)圖案。將所得的附有SR圖案的銀配線基板於濕潤環境下(溫度130度、濕度85%RH、壓力1.2atm)(使用裝置:espec公司製造,EHS-221MD)放置100hr後,取出樣品,進行上述膠帶剝離試驗。將結果匯總示於表3中。 Thereafter, an insulating layer (PFR-800 manufactured by Sun Ink Co., Ltd.) is laminated on the treated silver wiring substrate, and then exposed through a pattern mask (L-shaped pattern), developed, baked, and further exposed to silver. An SR (solder resist) pattern was formed on the wiring board (film thickness of SR: 30 μm). The obtained silver wiring board with the SR pattern was placed in a humid environment (temperature: 130 degrees, humidity: 85% RH, pressure: 1.2 atm) (using a device: manufactured by Espec Co., Ltd., EHS-221MD) for 100 hr, and then the sample was taken out to carry out the above. Tape peel test. The results are summarized in Table 3.

<比較例8> <Comparative Example 8>

於實例8中,代替將銀配線基板於含有聚甲基丙烯酸縮水甘油酯(Polymer Source公司製造,反應性官能基Y的個數:335,反應性官能基Y當量:143,數量平均分子量:48000)的環己酮溶液(聚合物濃度:5wt%)中於室溫下浸漬10分鐘,並以環己酮進行清洗,而將銀配線基板於含有2-(3,4-環氧環己基)乙基三甲氧基矽烷(Azmax公司製造)的乙醇溶液(化合物濃度:10mM)中浸漬5分鐘,並以乙醇進行清洗,除此以外,以相同的順序於濕潤環境下放置100hr後,取出樣品,進行上述膠帶剝離試驗。將結果匯總示於表3中。 In Example 8, instead of the silver wiring substrate containing polyglycidyl methacrylate (manufactured by Polymer Source, the number of reactive functional groups Y: 335, reactive functional group Y equivalent: 143, number average molecular weight: 48,000) The cyclohexanone solution (polymer concentration: 5 wt%) was immersed at room temperature for 10 minutes and washed with cyclohexanone, and the silver wiring substrate was contained in 2-(3,4-epoxycyclohexyl). Ethyl trimethoxy decane (manufactured by Azmax Co., Ltd.) was immersed in an ethanol solution (compound concentration: 10 mM) for 5 minutes, and washed with ethanol, and then placed in a wet environment for 100 hr in the same order, and then the sample was taken out. The tape peeling test described above was carried out. The results are summarized in Table 3.

再者,於表3中,「初期密接性」一欄為對在濕潤環境下放置100hr前的附有SR圖案的銀配線基板進行膠帶剝離試驗的結果,是按照與上述(膠帶剝離試驗)相同的評價基準來評價。 In addition, in Table 3, the "initial adhesion" column is a result of performing a tape peeling test on a silver wiring board with an SR pattern placed in a wet environment for 100 hr, and is the same as the above (tape peeling test). Evaluation criteria to evaluate.

另外,於表3中,「經時穩定性」一欄是對在濕潤環境下放置100hr後的附有SR圖案的銀配線基板進行膠帶剝離試驗,求出在濕潤環境下放置前後的殘存格數之比(濕潤環境下放置後的剝離試驗中的殘存格數/濕潤環境下放置前的剝離試驗中的殘存格數),並按照與上述(經時密接試驗)相同的評價基準來評價。 In addition, in Table 3, the "Time Stability" column is a tape peeling test for a silver wiring board with an SR pattern placed in a wet environment for 100 hours, and the number of remaining cells before and after being placed in a wet environment is determined. The ratio (the number of remaining cells in the peeling test after standing in a wet environment/the number of remaining cells in the peeling test before leaving in a wet environment) was evaluated in accordance with the same evaluation criteria as the above (time-sensitive test).

如表3所示,於使用銀配線作為金屬配線的情形時,藉由本發明的製造方法而獲得的印刷配線基板亦表現出優異的初期密接性及經時穩定性。 As shown in Table 3, when a silver wiring is used as the metal wiring, the printed wiring board obtained by the manufacturing method of the present invention also exhibits excellent initial adhesion and stability with time.

另一方面,於不實施使用聚合物的第2配線處理的比較例8中,經時穩定性差。 On the other hand, in Comparative Example 8 in which the second wiring treatment using the polymer was not carried out, the stability with time was poor.

10‧‧‧附有金屬配線的絕緣基板 10‧‧‧Insulated substrate with metal wiring

12‧‧‧絕緣基板 12‧‧‧Insert substrate

14‧‧‧金屬配線 14‧‧‧Metal wiring

16‧‧‧硫醇化合物的層 16‧‧‧layer of thiol compound

18‧‧‧鍵結於金屬配線的表面的硫醇化合物的層 18‧‧‧layer of thiol compound bonded to the surface of the metal wiring

20‧‧‧聚合物的層 20‧‧‧layer of polymer

22‧‧‧鍵結於經硫醇化合物覆蓋的金屬配線的聚合物的層 22‧‧‧layer of polymer bonded to metal wiring covered by thiol compound

24‧‧‧絕緣樹脂層 24‧‧‧Insulating resin layer

26‧‧‧印刷配線基板 26‧‧‧Printed wiring substrate

40‧‧‧其他絕緣基板 40‧‧‧Other insulating substrates

50‧‧‧其他金屬配線 50‧‧‧Other metal wiring

60‧‧‧矽烷偶合劑 60‧‧‧decane coupling agent

62‧‧‧聚合物 62‧‧‧ polymer

圖1(A)~圖1(F)為依序表示本發明的印刷配線基板的製造方法中的自基板至印刷配線基板為止之各步驟的示意性剖面圖。 1(A) to 1(F) are schematic cross-sectional views showing respective steps from the substrate to the printed wiring board in the method of manufacturing the printed wiring board of the present invention.

圖2為表示附有金屬配線的絕緣基板的其他態樣的示意性剖面圖。 Fig. 2 is a schematic cross-sectional view showing another aspect of an insulating substrate with metal wiring.

圖3(A)及圖3(B)為表示使用具有矽原子鍵結水解性基的矽烷偶合劑實施各種步驟的態樣的示意性剖面圖。 3(A) and 3(B) are schematic cross-sectional views showing a state in which various steps are carried out using a decane coupling agent having a hydrazine atom-bonding hydrolyzable group.

10‧‧‧附有金屬配線的絕緣基板 10‧‧‧Insulated substrate with metal wiring

12‧‧‧絕緣基板 12‧‧‧Insert substrate

14‧‧‧金屬配線 14‧‧‧Metal wiring

18‧‧‧鍵結於金屬配線的表面的硫醇化合物的層 18‧‧‧layer of thiol compound bonded to the surface of the metal wiring

22‧‧‧鍵結於經硫醇化合物覆蓋的金屬配線的聚合物的層 22‧‧‧layer of polymer bonded to metal wiring covered by thiol compound

24‧‧‧絕緣樹脂層 24‧‧‧Insulating resin layer

26‧‧‧印刷配線基板 26‧‧‧Printed wiring substrate

Claims (8)

一種印刷配線基板的製造方法,上述印刷配線基板於附有金屬配線的絕緣基板上設有絕緣樹脂層,上述製造方法包含:第1被覆步驟,使用具有2個以上的反應性官能基X(其中矽烷醇基及矽原子鍵結水解性基除外)、且上述反應性官能基X的至少1個具有式(1)所表示的官能基的硫醇化合物,將上述附有金屬配線的絕緣基板的上述絕緣基板表面及上述金屬配線表面覆蓋,上述附有金屬配線的絕緣基板具有上述絕緣基板以及配置於上述絕緣基板上的上述金屬配線;第1清洗步驟,使用溶劑對上述附有金屬配線的絕緣基板進行清洗,將上述絕緣基板表面上的上述硫醇化合物去除;第2被覆步驟,使用具有至少3個以上的與上述反應性官能基X反應的反應性官能基Y的聚合物,將上述絕緣基板表面及經上述硫醇化合物覆蓋的上述金屬配線表面覆蓋;第2清洗步驟,使用溶劑對上述附有金屬配線的絕緣基板進行清洗,將上述絕緣基板表面上的上述聚合物去除;以及絕緣樹脂層形成步驟,於上述附有金屬配線的絕緣基板的金屬配線側的表面上形成上述絕緣樹脂層;HS-L1-* 式(1) (式(1)中,L1表示2價的脂肪族烴基;*表示鍵結位置)。 In a method of manufacturing a printed wiring board, the printed wiring board is provided with an insulating resin layer on an insulating substrate with metal wiring, and the manufacturing method includes a first coating step using two or more reactive functional groups X (wherein a thiol compound having at least one functional group represented by the formula (1) in which at least one of the reactive functional groups X is a thiol group and a ruthenium atom-bonded hydrolyzable group, and the insulating substrate with the metal wiring described above The surface of the insulating substrate and the surface of the metal wiring are covered, and the insulating substrate with the metal wiring includes the insulating substrate and the metal wiring disposed on the insulating substrate. In the first cleaning step, the metal wiring is insulated using a solvent. The substrate is cleaned to remove the thiol compound on the surface of the insulating substrate, and the second coating step is performed by using a polymer having at least three or more reactive functional groups Y reactive with the reactive functional group X. The surface of the substrate and the surface of the metal wiring covered by the thiol compound are covered; the second cleaning step uses a solvent Cleaning the insulating substrate with the metal wiring described above to remove the polymer on the surface of the insulating substrate; and forming an insulating resin layer to form the insulating layer on the surface of the metal wiring side of the insulating substrate with the metal wiring Resin layer; HS-L 1 -* Formula (1) (In the formula (1), L 1 represents a divalent aliphatic hydrocarbon group; * represents a bonding position). 如申請專利範圍第1項所述之印刷配線基板的製造方法,其中上述聚合物的數量平均分子量為10000以上。 The method for producing a printed wiring board according to the first aspect of the invention, wherein the polymer has a number average molecular weight of 10,000 or more. 如申請專利範圍第1項或第2項所述之印刷配線基板的製造方法,其中上述反應性官能基X為選自由上述式(1)所表示的官能基、一級胺基、二級胺基及異氰酸酯基所組成的組群中的基。 The method for producing a printed wiring board according to the above aspect, wherein the reactive functional group X is a functional group selected from the above formula (1), a primary amino group, and a secondary amino group. And a group in the group consisting of isocyanate groups. 如申請專利範圍第1項或第2項所述之印刷配線基板的製造方法,其中上述反應性官能基Y為選自由環氧基、丙烯酸酯基及甲基丙烯酸酯基所組成的組群中的基。 The method for producing a printed wiring board according to the first or second aspect, wherein the reactive functional group Y is selected from the group consisting of an epoxy group, an acrylate group, and a methacrylate group. Base. 如申請專利範圍第1項或第2項所述之印刷配線基板的製造方法,其中上述第2被覆步驟為使用含有上述聚合物、且實質上不含無機填料的聚合物組成物,將經上述硫醇化合物覆蓋的上述金屬配線表面及上述絕緣基板表面覆蓋的步驟。 The method for producing a printed wiring board according to the first or second aspect of the invention, wherein the second coating step is a polymer composition containing the polymer and substantially containing no inorganic filler, a step of covering the surface of the metal wiring covered with the thiol compound and the surface of the insulating substrate. 如申請專利範圍第5項所述之印刷配線基板的製造方法,其中相對於上述聚合物組成物總量,上述聚合物組成物中聚合物的含量為0.01wt%~80wt%。 The method for producing a printed wiring board according to claim 5, wherein a content of the polymer in the polymer composition is 0.01% by weight to 80% by weight based on the total amount of the polymer composition. 如申請專利範圍第1項或第2項所述之印刷配線基板的製造方法,其中上述反應性官能基X的個數為4個以上。 The method for producing a printed wiring board according to the first or second aspect of the invention, wherein the number of the reactive functional groups X is four or more. 一種IC封裝基板,其具有由如申請專利範圍第1項至第7項中任一項所述之印刷配線基板的製造方法所得的印刷配線基板。 An IC package substrate having a printed wiring board obtained by the method for producing a printed wiring board according to any one of the first to seventh aspects of the invention.
TW101109780A 2011-03-30 2012-03-22 Method for manufacturing printed wiring board and ic package substrate TWI542270B (en)

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